WO2015196612A1 - Oled制备方法 - Google Patents

Oled制备方法 Download PDF

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Publication number
WO2015196612A1
WO2015196612A1 PCT/CN2014/087905 CN2014087905W WO2015196612A1 WO 2015196612 A1 WO2015196612 A1 WO 2015196612A1 CN 2014087905 W CN2014087905 W CN 2014087905W WO 2015196612 A1 WO2015196612 A1 WO 2015196612A1
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Prior art keywords
particle
defect
organic
organic film
substrate
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English (en)
French (fr)
Inventor
吴海东
马群
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/861—Repairing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

Definitions

  • At least one embodiment of the present invention is directed to a method of fabricating an OLED.
  • HIL hole injection layer
  • HTL hole transport layer
  • EML emission layer
  • ETL electron transport layer
  • Cathode cathode
  • At least one embodiment of the present invention provides an OLED preparation method to reduce waste of organic materials.
  • At least one embodiment of the present invention provides a method of fabricating an OLED comprising the step of sequentially vapor depositing a plurality of organic thin films. This step includes, after evaporating an organic film and before evaporating the next organic film, information for detecting particle defects on the substrate; and detecting the presence of the particle defect, repairing the particle defect by a defect repair process.
  • FIG. 1 is a flowchart of a method for fabricating an OLED according to an embodiment of the present invention
  • FIG. 2a is a schematic structural view of a substrate on a surface of an organic thin film in an OLED preparation method according to an embodiment of the present invention
  • 2b is a schematic structural diagram of a substrate after removing particles by using a laser process in an OLED preparation method according to an embodiment of the present invention
  • 3a is a schematic structural view of a substrate in which a particle portion is partially embedded in an organic thin film in an OLED preparation method according to an embodiment of the present invention
  • FIG. 3b is a schematic structural diagram of a substrate after removing particles by using a laser process in another method for preparing an OLED according to an embodiment of the present invention
  • 3c is a schematic structural diagram of a substrate after dropping a molten organic material in an OLED preparation method according to an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a substrate after grinding in an OLED preparation method according to an embodiment of the present invention
  • FIG. 4a is a schematic structural view of a substrate in which an entire granule is embedded in an organic film in an OLED preparation method according to an embodiment of the present invention
  • FIG. 4b is a schematic structural diagram of a substrate after removing particles by using a laser process in another method for preparing an OLED according to an embodiment of the present invention
  • 4c is a schematic structural view of a substrate after dropping a molten organic material in another method for preparing an OLED according to an embodiment of the present invention
  • FIG. 4 is a schematic structural diagram of a substrate after grinding in another OLED preparation method according to an embodiment of the present invention.
  • the inventors of the present application have noticed that in the fabrication of an OLED display device, although the vapor deposition chamber is first evacuated before vapor deposition, it is still impossible to achieve 100% cleanliness of the evaporation chamber. In the evaporation process, if particles fall onto the organic film, defects occur. The presence of particles may cause short-circuit conditions and lead to the appearance of black spots, which reduces the lifetime and efficiency of the device; and the presence of particles causes protrusions in subsequent vapor-deposited films to cause tip discharge phenomena, resulting in devices Life and efficiency are reduced.
  • At least one embodiment of the present invention provides a method for preparing an OLED, comprising the steps of sequentially vapor-depositing a plurality of organic thin films.
  • Steps S101 and S104 shown in FIG. 1 will be described as an example.
  • Step S101 and step S104 are both vapor-depositing an organic thin film.
  • the steps of sequentially depositing the plurality of organic thin films include: Step S102, detecting information of particle defects on the substrate; and step S103, when detecting the presence of the particle defect, repairing the particle defect by the defect repair process.
  • the multilayer organic film may be a combination of several of a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), and an electron transport layer (ETL) of an OLED.
  • HIL hole injection layer
  • HTL hole transport layer
  • EML emission layer
  • ETL electron transport layer
  • the embodiments of the present invention are not limited.
  • step S102 information of the particle defect 13 on the substrate is detected, in step In S103, when the presence of the particle defect 13 is detected, the particle defect 13 is repaired by the defect repairing process.
  • step S102 is added to detect the information of the particle defect 13 on the substrate.
  • the step S104 is directly performed to perform the vapor deposition of the next organic film; when the step S102 detects the presence of the particle defect 13 on the substrate, the step S103 is performed to perform the particle defect 13 repair.
  • the OLED preparation method of the embodiment of the present invention can detect and repair the particle defect 13 in a timely manner in the formation process of the multilayer organic film, compared with the technique of not detecting the particle defect between the vapor deposited two organic films. It can reduce the need to re-evaporate organic film to repair the OLED, thus reducing the waste of organic materials.
  • the defect repair process may include removing particles at the particle defect using a laser process.
  • the particle defects may be located on the surface of the organic film, or partially embedded in the organic film, or entirely embedded in the organic film.
  • the particles in the particle defect may be directly removed by a laser process.
  • the defect repairing process may further include: organic filming by grinding The surface is flat.
  • the surface of the organic film may be flattened directly by grinding; or the molten organic material may be dropped into the particle defect and the melting may be performed. The organic material is cooled, and the surface of the organic film is flattened by grinding.
  • the molten organic material is dropped into the particle defect, and the molten organic material is cooled, and the surface of the organic film is flattened by grinding. .
  • FIG. 1 Please refer to FIG. 1, FIG. 2a, FIG. 2b, FIG. 3a, FIG. 3b, FIG. 3c, FIG. 3d, FIG. 4a, FIG. 4b, FIG. 4c, and FIG.
  • the defect repairing process provided by the above embodiment will be described in detail below with reference to these drawings.
  • step S103 may include the following embodiments.
  • the first method is observed by a high power microscope.
  • the defect repairing process in the step S103 may directly remove the particles by using a laser to make the organic film 12
  • the surface is flat and the repair is complete, as shown in Figure 2b.
  • the organic thin film 12 may be directly disposed on the base substrate 11.
  • the base substrate 11 may be made of a transparent material such as glass, quartz, sapphire, or plastic; or the organic thin film 12 may be indirectly disposed on the base substrate 11, that is, an organic thin film.
  • Other structural film layers may be formed between the substrate 12 and the substrate substrate 11, and the invention is not limited thereto.
  • the defect repairing process in the step S103 may be: first, the particle is removed by using a laser, and at this time, the particle is removed. A groove 231 appears at the defect 23 as shown in Fig. 3b. If the groove 231 appearing at the particle defect 23 is shallow, the surface of the organic film 22 can be directly flattened by grinding to complete the repair. If the groove 231 appearing at the particle defect 23 is deep, the molten organic material may first be dropped into the groove 231 at the particle defect 23, as shown in Fig. 3c, which is the same as the organic material used for the vapor deposition.
  • the organic film 22 may be directly disposed on the base substrate 21.
  • the base substrate 21 may be made of a transparent material such as glass, quartz, sapphire, or plastic; or the organic film 22 may be indirectly disposed on the substrate 21, that is, an organic film.
  • Other structural film layers may also be formed between the substrate 22 and the substrate substrate 21, which are not limited in the present invention.
  • the defect repairing process in the step S103 may be: first, the particles are removed by using a laser, and at this time, A deep groove 331 appears at the particle defect 33, as shown in Fig. 4b; then the molten organic material is dropped into the groove 331 at the particle defect 33, as shown in Fig. 4c, the organic material and the organic material used for the vapor deposition.
  • the material is the same substance; after the organic material is cooled, it is ground to make the surface of the organic film 32 flat, and the repair is completed, as shown in Fig. 4d.
  • the organic film 32 may be directly disposed on the base substrate 31.
  • the base substrate 31 may be made of a transparent material such as glass, quartz, sapphire, or plastic; or the organic film 32 may be indirectly disposed on the base substrate 31, that is, an organic film. Other structural film layers may be formed between the substrate 32 and the substrate substrate 31, which are not limited in the present invention.
  • the process of dropping the molten organic material at the particle defect may include: observing the lens through a high power microscope The nozzle is moved over the particle defect area and then the molten organic material is dropped.
  • the lens is observed by a high-power microscope and the nozzle is moved over the area of the particle defect 33, and then the molten organic material is dropped.
  • the process of flattening the surface of the organic film by grinding may include: observing and moving the polishing head to the particle defect area by aligning the lens with a high power microscope, and then grinding the organic material until organic The film surface is flat.
  • the lens is observed and moved by the high magnification microscope to the lens defect area 33, and then the organic material is ground until the surface of the organic film 32 is flat.
  • the OLED preparation method may further include the steps of: performing cleaning and plasma treatment on the substrate. That is, the substrate is cleaned and plasma-treated before the substrate substrate has been subjected to any one of the organic thin film evaporation.
  • the OLED preparation method may further comprise the steps of: detecting particle defect information on the substrate; When a particle defect is detected, the particle defect is repaired by a defect repair process. This step can detect the particle defects of the last organic film of the multilayer organic film and repair the particle defects in time when the presence of the particle defects is detected.
  • the OLED preparation method may further include the steps of: forming a metal cathode layer and forming by a patterning process a metal cathode pattern; a light extraction layer formed on the metal cathode layer; and a package substrate.
  • the process of detecting the particle defect information on the substrate is increased, and when the particle defect is detected, Fix it now. This enables the particle defects to be found and repaired in time during the formation of the multilayer organic film, thereby reducing the waste of organic materials.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED制备方法，包括：依次蒸镀多层有机薄膜（12）。依次蒸镀多层有机薄膜（12）包括：在蒸镀一层有机薄膜（12）之后和进行蒸镀下一层有机薄膜（12）之前，检测基板（11）上的颗粒缺陷（13）的信息；当检测到颗粒缺陷（13）存在时，通过缺陷修复工艺修复颗粒缺陷（13）。OLED制备方法能够在多层有机薄膜（12）的形成过程中及时发现并修复颗粒缺陷（13），从而减少有机材料的浪费。

Description

OLED制备方法 技术领域
本发明的至少一个实施例涉及一种OLED制备方法。
背景技术
目前，彩色OLED显示器件像素区的空穴注入层(HIL)、空穴传输层(HTL)、发光层(EML)、电子传输层(ETL)、阴极(Cathode)等，都是采用真空蒸镀工艺来成膜。
发明内容
本发明的至少一个实施例提供了一种OLED制备方法，以减少有机材料的浪费。
本发明的至少一个实施例提供了一种OLED制备方法，其包括依次蒸镀多层有机薄膜的步骤。该步骤在蒸镀一层有机薄膜之后和进行蒸镀下一层有机薄膜之前包括：检测基板上的颗粒缺陷的信息；当检测到颗粒缺陷存在时，通过缺陷修复工艺修复所述颗粒缺陷。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为本发明实施例提供的一种OLED制备方法流程图；
图2a为本发明实施例提供的一种OLED制备方法中颗粒位于有机薄膜表面的基板结构示意图；
图2b为本发明实施例提供的一种OLED制备方法中采用激光工艺去除颗粒后的基板结构示意图；
图3a为本发明实施例提供的一种OLED制备方法中颗粒部分嵌入有机薄膜表面的基板结构示意图；
图3b为本发明实施例提供的另一种OLED制备方法中采用激光工艺去除颗粒后的基板结构示意图；
图3c为本发明实施例提供的一种OLED制备方法中滴入熔化的有机材料后的基板结构示意图；
图3d为本发明实施例提供的一种OLED制备方法中经过研磨后的基板结构示意图；
图4a为本发明实施例提供的一种OLED制备方法中颗粒全部嵌入有机薄膜内部的基板结构示意图；
图4b为本发明实施例提供的再一种OLED制备方法中采用激光工艺去除颗粒后的基板结构示意图；
图4c为本发明实施例提供的另一种OLED制备方法中滴入熔化的有机材料后的基板结构示意图；
图4d为本发明实施例提供的另一种OLED制备方法中经过研磨后的基板结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
本申请的发明人注意到，在OLED显示器件的制作过程中，尽管在蒸镀前会先对蒸镀腔体进行抽真空，这仍然无法实现蒸镀腔体的100％洁净。在蒸镀过程中，若有颗粒(Particle)落到有机薄膜上，就会出现缺陷。颗粒的存在可能引起短路情况的发生，并导致黑点的出现，这使得器件的寿命和效率降低；并且，颗粒的存在使得后续的蒸镀薄膜出现凸起物，出现尖端放电现象，从而导致器件的寿命和效率降低。
目前，在OLED显示器件的制备过程中的每一层有机薄膜的真空蒸镀过程中，不检测是否存在颗粒缺陷。因此，只有在OLED显示器件发生不良时，通过不良分析来发现颗粒缺陷。然而，这时的颗粒已经被深埋在薄膜内部， 从而无法再对其进行修复，只能通过清洗液清洗掉蒸镀到玻璃基板上的有机薄膜，重新进行有机材料的真空蒸镀工艺，因此，这种修复方法可导致有机材料的浪费。
请参考图1，图2a和图2b。
如图1所示，本发明的至少一个实施例提供的OLED制备方法，包括依次蒸镀多层有机薄膜的步骤。
以图1所示的步骤S101和步骤S104为例进行说明。步骤S101和步骤S104均为蒸镀一层有机薄膜，在步骤S101中蒸镀一层有机薄膜之后和步骤S104中进行蒸镀下一层有机薄膜之前，依次蒸镀多层有机薄膜的步骤包括：步骤S102，检测基板上的颗粒缺陷的信息；步骤S103，当检测到颗粒缺陷存在时，通过缺陷修复工艺修复颗粒缺陷。
在不同实施例中，所述多层有机薄膜可以为OLED的空穴注入层(HIL)、空穴传输层(HTL)、发光层(EML)、电子传输层(ETL)中的几种的组合。本发明实施例不做限定。
如图2a和图2b所示，在步骤S101中蒸镀有机薄膜12之后和步骤S104中进行蒸镀下一层有机薄膜之前，在步骤S102中，检测基板上的颗粒缺陷13的信息，在步骤S103中，当检测到颗粒缺陷13存在时，通过缺陷修复工艺修复颗粒缺陷13。
本发明实施例的OLED制备方法，在步骤S101中蒸镀一层有机薄膜12之后和步骤S104中进行蒸镀下一层有机薄膜之前，增加步骤S102以检测基板上的颗粒缺陷13的信息，当进行了步骤S101之后的基板上不存在颗粒缺陷13时，直接进行步骤S104进行下一层有机薄膜的蒸镀；当步骤S102检测到基板上存在颗粒缺陷13时，执行步骤S103对颗粒缺陷13进行修复。所以，本发明实施例的OLED制备方法，能够在多层有机薄膜的形成过程中及时发现并修复颗粒缺陷13，相对于在蒸镀两层有机薄膜之间不进行颗粒缺陷检测的技术而言，能够减少必须重新蒸镀有机薄膜才能对OLED进行修复现象的发生，从而减少有机材料的浪费。
在一个实施例中，所述缺陷修复工艺可以包括：采用激光工艺去除所述颗粒缺陷处的颗粒。例如，所述颗粒缺陷可以位于有机薄膜的表面，或部分嵌入有机薄膜，或全部嵌入有机薄膜。
在一个实施例中，当所述颗粒缺陷处的颗粒位于所述有机薄膜的表面时，可以直接采用激光工艺去除所述颗粒缺陷中的颗粒。
在一个实施例中，当所述颗粒缺陷处的颗粒部分或全部嵌入所述有机薄膜时，在去除所述颗粒缺陷中的颗粒后，所述缺陷修复工艺还可以包括：通过研磨使有机薄膜的表面平坦。
例如，当所述颗粒缺陷处的颗粒部分嵌入所述有机薄膜时，可以直接通过研磨使所述有机薄膜的表面平坦；或者在所述颗粒缺陷处滴入熔化的有机材料，并使所述熔化的有机材料冷却，以及通过研磨使所述有机薄膜的表面平坦。
例如，当所述颗粒缺陷处的颗粒全部嵌入所述有机薄膜时，在所述颗粒缺陷处滴入熔化的有机材料，并使所述熔化的有机材料冷却，以及通过研磨使有机薄膜的表面平坦。
请参考图1，图2a，图2b，图3a，图3b，图3c，图3d，图4a，图4b，图4c，图4d。下面结合这些附图，对上述实施例提供的缺陷修复工艺进行详细说明。
在不同实施例中，步骤S103可以包括以下几种实施方式。
方式一，通过高倍显微镜进行观察，当颗粒缺陷13处的颗粒位于有机薄膜12的表面时，如图2a所示，步骤S103中的缺陷修复工艺可以为直接利用激光打掉颗粒，使有机薄膜12表面平坦，修复完成，如图2b所示。例如，有机薄膜12可以直接设置于衬底基板11上，衬底基板11可以选用玻璃、石英、蓝宝石、塑料等透明材质；或者，有机薄膜12可以间接设置于衬底基板11上，即有机薄膜12和衬底基板11之间还可以形成其它结构膜层，本发明不做限制。
方式二，通过高倍显微镜进行观察，当颗粒缺陷23处的颗粒部分嵌入有机薄膜22时，如图3a所示，步骤S103中的缺陷修复工艺可以为：首先利用激光打掉颗粒，此时，颗粒缺陷23处出现凹槽231，如图3b所示。如果颗粒缺陷23处出现的凹槽231很浅，则可直接通过研磨使有机薄膜22表面平坦，完成修复。如果颗粒缺陷23处出现的凹槽231很深，则可以首先在颗粒缺陷23处的凹槽231内滴入熔化的有机材料，如图3c所示，此有机材料与蒸镀所用有机材料为同一物质；然后，待有机材料冷却后再进行研磨，使有 机薄膜22表面平坦，完成修复，如图3d所示。例如，有机薄膜22可以直接设置于衬底基板21上，衬底基板21可以选用玻璃、石英、蓝宝石、塑料等透明材质；或者，有机薄膜22可以间接设置于衬底基板21上，即有机薄膜22和衬底基板21之间还可以形成其它结构膜层，本发明不做限制。
方式三，通过高倍显微镜进行观察，当颗粒缺陷33处的颗粒全部嵌入有机薄膜32时，如图4a所示，步骤S103中的缺陷修复工艺可以为：首先利用激光打掉颗粒，此时，在颗粒缺陷33处出现很深的凹槽331，如图4b所示；然后在颗粒缺陷33处的凹槽331内滴入熔化的有机材料，如图4c所示，此有机材料与蒸镀所用有机材料为同一物质；待有机材料冷却后再进行研磨，使有机薄膜32表面平坦，完成修复，如图4d所示。例如，有机薄膜32可以直接设置于衬底基板31上，衬底基板31可以选用玻璃、石英、蓝宝石、塑料等透明材质；或者，有机薄膜32可以间接设置于衬底基板31上，即有机薄膜32和衬底基板31之间还可以形成其它结构膜层，本发明不做限制。
在上述实施例的方式二或者方式三的基础上，在一个实施例中的步骤S103的缺陷修复工艺中，在颗粒缺陷处滴入熔化的有机材料的过程可以包括：通过高倍显微镜对准镜头观察并将喷嘴移动至颗粒缺陷区域上方，然后滴入熔化的有机材料。以上述实施例中的方式三为例，如图4b，通过高倍显微镜对准镜头观察并将喷嘴移动至颗粒缺陷33区域上方，然后滴入熔化的有机材料。
在上述实施例的基础上，在一个实施例中，通过研磨使有机薄膜表面平坦的过程可以包括：通过高倍显微镜对准镜头观察并移动研磨头至颗粒缺陷区域，然后对有机材料进行研磨直至有机薄膜表面平坦。以上述实施例中的方式三为例，如图3c，通过高倍显微镜对准镜头观察并移动研磨头至颗粒缺陷33区域，然后对有机材料进行研磨直至有机薄膜32表面平坦。
在上述各实施例的基础上，在一个实施例中，在依次蒸镀多层有机薄膜之前，OLED制备方法还可以包括步骤：对衬底基板进行清洗和等离子处理。即在对衬底基板还没有进行任何一层有机薄膜蒸镀之前对衬底基板进行清洗和等离子处理。
在上述各实施例的基础上，在一个实施例中，在依次蒸镀多层有机薄膜之后，OLED制备方法还可以包括步骤：检测基板上的颗粒缺陷信息；当检 测到颗粒缺陷存在时，通过缺陷修复工艺修复颗粒缺陷。该步骤可以对多层有机薄膜的最后一层有机薄膜的颗粒缺陷进行检测，并在检测到颗粒缺陷存在时及时修复颗粒缺陷。
在上述实施例的基础上，在一个实施例中，在依次蒸镀多层有机薄膜并且检测基板上的颗粒缺陷信息之后，OLED制备方法还可以包括步骤：形成金属阴极层，并通过构图工艺形成金属阴极图形；在金属阴极层上形成光取出层；封装基板。
本发明实施例提供的OLED制备方法中，在蒸镀一层有机薄膜之后和进行蒸镀下一层有机薄膜之前，增加检测基板上的颗粒缺陷信息的工艺环节，当检测到颗粒缺陷存在时，立即进行修复。这样能够在多层有机薄膜的形成过程中及时发现并修复颗粒缺陷，从而减少有机材料的浪费。
显然，本领域的技术人员可以对本发明实施例进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。
本申请要求于2014年6月24日递交的中国专利申请第201410288714.7号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (13)

  1. 一种OLED制备方法，包括依次蒸镀多层有机薄膜，其中，
    在蒸镀一层有机薄膜之后和进行蒸镀下一层有机薄膜之前，检测基板上的颗粒缺陷的信息；
    当检测到颗粒缺陷存在时，通过缺陷修复工艺修复所述颗粒缺陷。
  2. 根据权利要求1所述的OLED制备方法，其中，所述缺陷修复工艺包括：采用激光工艺去除所述颗粒缺陷中的颗粒。
  3. 根据权利要求2所述的OLED制备方法，其中，
    当所述颗粒缺陷处的颗粒位于所述有机薄膜的表面时，直接采用激光工艺去除所述颗粒缺陷中的颗粒。
  4. 根据权利要求2所述的OLED制备方法，其中，当所述颗粒缺陷处的颗粒部分或全部嵌入所述有机薄膜时，在去除所述颗粒缺陷中的颗粒后，所述缺陷修复工艺还包括：
    通过研磨使所述有机薄膜的表面平坦。
  5. 根据权利要求4所述的OLED制备方法，其中，
    当所述颗粒缺陷处的颗粒部分嵌入所述有机薄膜时，直接通过研磨使所述有机薄膜的表面平坦；或者
    在所述颗粒缺陷处滴入熔化的有机材料，并使所述熔化的有机材料冷却，以及通过研磨使所述有机薄膜的表面平坦。
  6. 根据权利要求4所述的OLED制备方法，其中，
    当所述颗粒缺陷处的颗粒全部嵌入所述有机薄膜时，在所述颗粒缺陷处滴入熔化的有机材料，并使所述熔化的有机材料冷却，以及通过研磨使有机薄膜的表面平坦。
  7. 根据权利要求5或6所述的OLED制备方法，其中，所述有机材料与蒸镀所述有机薄膜的材料相同。
  8. 根据权利要求5-7任一所述的OLED制备方法，其中，在所述颗粒缺陷处滴入熔化的有机材料，包括：
    通过显微镜观察并将喷嘴移动至颗粒缺陷区域上方，然后滴入熔化的所述有机材料。
  9. 根据权利要求5-8任一所述的OLED制备方法，其中，所述通过研磨使所述有机薄膜的表面平坦，包括：
    通过显微镜观察并移动研磨头至颗粒缺陷区域，然后对所述有机材料进行研磨直至所述有机薄膜的表面平坦。
  10. 根据权利要求1-9任一所述的OLED制备方法，其中，所述检测基板上的颗粒缺陷信息，包括：
    通过显微镜对所述基板进行观察，确定所述基板上的所述颗粒缺陷的信息。
  11. 根据权利要求1-10任一项所述的OLED制备方法，在所述依次蒸镀多层有机薄膜之前，还包括：
    对衬底基板进行清洗和等离子处理。
  12. 根据权利要求1-11任一项所述的OLED制备方法，在所述依次蒸镀多层有机薄膜之后，还包括：
    检测所述基板上的所述颗粒缺陷的信息；
    当检测到所述颗粒缺陷存在时，通过所述缺陷修复工艺修复所述颗粒缺陷。
  13. 根据权利要求12所述的OLED制备方法，在所述依次蒸镀多层有机薄膜并且检测所述基板上的所述颗粒缺陷的信息之后，还包括：
    形成金属阴极层，并通过构图工艺形成金属阴极图形；
    在金属阴极层上形成光取出层；
    封装基板。
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