WO2018149023A1 - 发光器件及显示装置 - Google Patents

发光器件及显示装置 Download PDF

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WO2018149023A1
WO2018149023A1 PCT/CN2017/078799 CN2017078799W WO2018149023A1 WO 2018149023 A1 WO2018149023 A1 WO 2018149023A1 CN 2017078799 W CN2017078799 W CN 2017078799W WO 2018149023 A1 WO2018149023 A1 WO 2018149023A1
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light emitting
layer
bottom electrode
light
emitting device
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PCT/CN2017/078799
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English (en)
French (fr)
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陈黎暄
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深圳市华星光电技术有限公司
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Priority to US15/523,370 priority Critical patent/US20180277781A1/en
Publication of WO2018149023A1 publication Critical patent/WO2018149023A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Definitions

  • the present invention belongs to the field of display technologies, and in particular, to a light emitting device and a display device.
  • Inkjet printing is considered to be a promising display preparation technology because of its high material utilization and the absence of high-precision masks.
  • An unavoidable problem in the process of fabricating an OLED display using an inkjet printing method is the edge climbing problem of the solution on the pixel defining layer.
  • the inkjet printing method belongs to a wet film forming process. After the solution is dropped, the solvent needs to be evaporated and dried to form a film. This drying process often brings about differences in film forming properties such as roughness, thickness, uniformity, and the like.
  • the process of fabricating an OLED display by an inkjet printing method is: preparing a pixel defining layer by a photolithography process on a substrate provided with a conductive electrode, and forming a container-like structure between the pixel defining layer and the substrate.
  • the material solution for display is dropped into the pixel defining layer by an inkjet process. Since the pixel defining layer is often formed by a single layer or a plurality of layers of hydrophobic material, the solution may have a convex shape depending on the surface tension.
  • an organic functional layer is formed by a process of evaporating the solvent.
  • the pinning effect occurs during the film formation of the organic functional layer, that is, the film thickness at the interface and the film thickness at the center are not uniform.
  • the phenomenon of edge climbing occurs in the solution, resulting in a thin film in the middle and a thick edge, which affects the film formation quality and thus affects the uniformity of pixel illumination.
  • an object of the present invention is to provide a light emitting device comprising: a substrate; a defining block disposed on the substrate and defining a light emitting region; disposed on the substrate and located in the light emitting a bottom electrode in the region, a gap between the bottom electrode and the defining block; a light emitting component disposed on the bottom electrode; and a top electrode disposed on the light emitting component.
  • a projection of the top electrode on the bottom electrode is located within the bottom electrode.
  • the light emitting component sequentially includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer from the bottom electrode to the top electrode.
  • the light emitting layer is an organic light emitting layer or a quantum dot light emitting layer.
  • one of the bottom electrode and the top electrode is transparent or translucent and the other is opaque and reflective.
  • the hole injection layer and/or the hole transport layer and/or the light emitting layer and/or the electron transport layer and/or the electron injection layer are made by inkjet printing. .
  • the defining block is made of a hydrophobic material.
  • Another object of the present invention is to provide a display device including the above-described light emitting device.
  • the film thickness unevenness regions of the functional layers forming the light-emitting assembly are not spatially overlapped between the bottom electrode and the top electrode Therefore, there is no longer a large current density carrier passing through the uneven thickness region of each functional layer, thereby no longer affecting the light-emitting characteristics of the pixel.
  • FIG. 1 is a top plan view of a light emitting region defined by a defining block, in accordance with an embodiment of the present invention
  • FIG. 2 is a cross-sectional view of a light emitting device in accordance with an embodiment of the present invention.
  • FIG. 1 is a top plan view of a light emitting region defined by a defining block, in accordance with an embodiment of the present invention.
  • a plurality of defining blocks (or pixel defining layers) 20 are vertically and horizontally arranged on the substrate 10 to define a plurality of light emitting regions 10a.
  • these light emitting regions 10a are arranged in an array, but the invention is not limited thereto.
  • one light-emitting region 10a will be described as an example.
  • the other light-emitting region 10a is the same as the light-emitting region 10a shown below.
  • FIG. 2 is a cross-sectional view of a light emitting device in accordance with an embodiment of the present invention. It should be noted that the light emitting device is generally used in an organic light emitting display device or other suitable display device.
  • a light emitting device includes a substrate 10, a defining block (or pixel defining layer) 20, a bottom electrode 30, a light emitting assembly 40, and a top electrode 50. It should be noted that the light emitting device of the present invention may further include other suitable elements.
  • the substrate 10 can be transparent or opaque.
  • the substrate 10 has a light transmitting property for observing the light emitting of the light emitting unit 40 through the substrate 10.
  • Transparent glass or plastic is usually used in this case.
  • the substrate 10 may be light transmissive, light absorbing or reflective. Materials for use in this case include, but are not limited to, glass, plastic, semiconductor materials, ceramics, circuit board materials, or any other suitable material.
  • the defining block 20 defines a light emitting region 10a on the substrate 10.
  • the defining block 20 may be a single layer, a double layer or a multilayer structure formed of a hydrophobic material.
  • the hydrophobic material may be, for example, polystyrene, polyethylene terephthalate or the like.
  • the bottom electrode 30 is disposed on the substrate 10 and located in the light emitting region 10a, and has a gap between the bottom electrode 30 and the defining block 20.
  • the size of the gap is determined by the size of the edge of the solution on the defining block 20 when the light-emitting assembly 40 is formed.
  • the bottom electrode 30 is typically provided as an anode.
  • the bottom electrode 30 is also a mirror.
  • the bottom electrode 30 may be made of a reflective metal and should be thin enough to It has a partial light transmittance at the wavelength of the emitted light, which is said to be translucent, or the bottom electrode 30 may be made of a transparent metal oxide such as indium tin oxide or zinc tin oxide.
  • the bottom electrode 30 can be made of a reflective metal and should be thick enough to be substantially opaque and to be a full mirror.
  • the light emitting assembly 40 is disposed on the bottom electrode 30.
  • the light-emitting assembly 40 includes, in order from the bottom electrode 30 to the top electrode 50, a hole injection layer 41, a hole transport layer 42, a light-emitting layer 43, an electron transport layer 44, and an electron injection layer 45.
  • the lighting assembly 40 of the present invention is not limited to the structures described herein, but may be any other suitable lighting structure.
  • the light-emitting layer 43 may be, for example, an organic light-emitting layer or a quantum dot light-emitting layer, and the present invention is not limited thereto.
  • the functional layers included in the light-emitting assembly 40 may be formed by inkjet printing, and the solution forming the functional layers may form a climbing phenomenon on the defining block 20, and the solution of each functional layer may be formed on the defining block 20.
  • the size of the climb determines the size of the gap.
  • the top electrode 50 is disposed on the light emitting assembly 40.
  • the top electrode 50 is also spaced from the defining block 20.
  • the top electrode 50 and the bottom electrode 30 are completely spatially coincident, but the invention is not limited thereto, and for example, the projection of the top electrode 50 on the bottom electrode 30 may be located within the bottom electrode 30.
  • the projection of the top electrode 50 on the bottom electrode 30 is located within the bottom electrode 30, and the projection of the top electrode 50 on the bottom electrode 30 completely coincides with the bottom electrode 30.
  • the top electrode 50 is typically provided as a cathode.
  • the top electrode 50 is also a mirror.
  • the top electrode 50 may be made of a reflective metal and should be thin enough to have a partial light transmittance at the wavelength of the emitted light, which is said to be translucent, or
  • the top electrode 50 may be made of a transparent metal oxide such as indium tin oxide or zinc tin oxide.
  • the top electrode 50 can be made of a reflective metal and should be thick enough to be substantially opaque and to be a full mirror.
  • the film thickness uneven regions forming the functional layers of the light-emitting assembly 40 are not spatially overlapped with the bottom electrode 30 and the top electrode. Between 50, there is no longer a large current density carrier passing through the uneven thickness region of each functional layer, thereby no longer affecting the luminescent properties of the pixel.

Abstract

一种发光器件及显示装置，该发光器件包括：基板（10）；设置在基板（10）上且用于限定出发光区域（10a）的限定块（20）；设置在基板（10）上且位于发光区域（10a）中的底电极（30），底电极（30）与限定块（20）之间具有间隙；设置在底电极（30）上的发光组件（40）；以及设置在发光组件（40）上的顶电极（50）。通过在底电极（30）和顶电极（50）与限定块（20）之间形成间隙，使形成发光组件的各功能层的膜厚不均区域不处于空间上重叠的底电极（30）和顶电极（50）之间，这样不再有较大电流密度载流子通过各功能层的膜厚不均区域，从而不再影响像素的发光特性。

Description

发光器件及显示装置 技术领域
本发明属于显示技术领域，具体地讲，涉及一种发光器件及显示装置。
背景技术
喷墨打印具有极高的材料利用率，同时不需要高精度掩膜，被认为是一种极具潜力的显示器制备技术。
在采用喷墨打印方法制作OLED显示器的过程中，一个不可回避的问题是溶液在像素界定层上的边缘攀爬问题。喷墨打印方法属于一种湿法成膜的工艺，在滴下溶液后，需要蒸发溶剂，干燥成膜。这一干燥过程往往带来成膜特性(诸如粗糙度、厚度及均一性等)的差异。
采用喷墨打印方法制作OLED显示器的过程为：在设置有导电电极的基板上，通过光刻工艺制备像素界定层，并在像素界定层和基板之间形成一个类似容器的结构。通过喷墨工艺将显示用材料溶液滴入像素界定层间，由于像素界定层往往采用单层或多层的疏水材料形成，所以依赖于表面张力作用，溶液会出现中间凸的形态。
在滴入“墨水”以后，经过蒸发溶剂的过程，形成有机功能层。有机功能层的成膜过程中会出现钉扎效应，即会发生在界面处的膜厚与中心处的膜厚不均的现象。溶液会发生边缘攀爬的现象，导致薄膜中间薄，边缘厚，从而影响成膜质量并进而影响像素发光的均一性。
发明内容
为了解决上述的技术问题，本发明目的在于提供一种发光器件，其包括：基板；设置在所述基板上且用于限定出发光区域的限定块；设置在所述基板上且位于所述发光区域中的底电极，所述底电极与所述限定块之间具有间隙；设置在所述底电极上的发光组件；以及设置在所述发光组件上的顶电极。
可选地，所述顶电极在所述底电极上的投影位于所述底电极以内。
可选地，所述发光组件从所述底电极至所述顶电极顺序包括：空穴注入层、空穴传输层、发光层、电子传输层和电子注入层。
可选地，所述发光层为有机发光层或者量子点发光层。
可选地，所述底电极和所述顶电极中的一个是透明的或半透明的，另一个是不透明且反射光的。
可选地，所述空穴注入层和/或所述空穴传输层和/或所述发光层和/或所述电子传输层和/或所述电子注入层采用喷墨打印的方式制成。
可选地，所述限定块采用疏水性材料制成。
本发明的另一目的还在于提供了一种显示装置，其包括上述的发光器件。
本发明的有益效果：本发明通过在底电极和顶电极与限定块之间形成间隙，使形成发光组件的各功能层的膜厚不均区域不处于空间上重叠的底电极和顶电极之间，这样不再有较大电流密度载流子通过各功能层的膜厚不均区域，从而不再影响像素的发光特性。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是根据本发明的实施例的由限定块限定出的发光区域的俯视图；
图2是根据本发明的实施例的发光器件的剖面图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中，为了清楚器件，夸大了层和区域的厚度。相同的标号在整个说明书和附图中表示相同的元器件。
图1是根据本发明的实施例的由限定块限定出的发光区域的俯视图。
参照图1，多条限定块(或称像素界定层)20纵横排布在基板10上，以限定出多个发光区域10a。优选地，这些发光区域10a阵列排布，但本发明并不限制于此。
下面以一个发光区域10a为例进行说明。其它发光区域10a与下面所示的发光区域10a相同。
图2是根据本发明的实施例的发光器件的剖面图。应当说明的是，该发光器件通常用于有机发光显示装置或者其它合适的显示装置中。
参照图2，根据本发明的实施例的发光器件包括：基板10、限定块(或称像素界定层)20、底电极30、发光组件40和顶电极50。应当说明的是，本发明的发光器件还可以包括其它合适的元件。
基板10可以是透明的或者不透明的。对于通过基板10观察发光组件40发光来说，基板10是具有透光性质。在此情况下通常使用透明玻璃或塑料。对于通过顶电极50观察发光组件40发光来说，基板10的可以是透光的、吸光的或反光的。用于这种情况的材料包括但是不局限于玻璃、塑料、半导体材料、陶瓷、电路板材料或任何其它合适的材料。
如上所述，限定块20在基板10上限定出发光区域10a。在本实施例中，限定块20可以是由疏水性材料形成的单层、双层或者多层的结构。疏水性材料可例如是聚苯乙烯、聚对苯二甲酸乙二醇酯等。
底电极30设置在基板10上且位于发光区域10a中，并且底电极30与限定块20之间具有间隙。这里，该间隙的尺寸大小由形成发光组件40时溶液在限定块20上的边缘爬坡的尺寸来确定。
底电极30通常被设置为阳极。底电极30也是反光镜。当通过基板10观察发光组件40发光时，底电极30可以由反射性金属制成，并且应该足够薄以 便在发射光的波长下具有部分透光率，这被称为是半透明的，或者底电极30可以由透明的金属氧化物制成，诸如氧化铟锡或氧化锌锡等。当通过顶电极50观察发光组件40发光时，底电极30可以由反射性金属制成，并且应该足够厚，以使其基本上是不透光的且是全反光镜。
发光组件40设置在底电极30上。作为本发明的一个实施例，发光组件40从底电极30至顶电极50顺序包括：空穴注入层41、空穴传输层42、发光层43、电子传输层44和电子注入层45。应当说明的是，本发明的发光组件40并不限于这里描述的结构，其可以是其它合适的任意发光结构。此外，发光层43可例如是有机发光层或者量子点发光层，本发明并不限制于此。
优选地，发光组件40包括的各功能层可以采用喷墨打印的方式形成，而形成各功能层的溶液会在限定块20上形成爬坡现象，各功能层的溶液会在限定块20上形成的爬坡的尺寸确定所述间隙的尺寸大小。
顶电极50设置在发光组件40上。在本实施例中，顶电极50也与限定块20之间具有间隔。优选地，顶电极50与底电极30在空间上完全重合，但本发明并不限制于此，例如可以使顶电极50在底电极30上的投影位于底电极30以内。这里，顶电极50在底电极30上的投影位于底电极30以内包括顶电极50在底电极30上的投影与底电极30完全重合。
顶电极50通常被设置为阴极。顶电极50也是反光镜。当通过顶电极50观察发光组件40发光时，顶电极50可以由反射性金属制成，并且应该足够薄以便在发射光的波长下具有部分透光率，这被称为是半透明的，或者顶电极50可以由透明的金属氧化物制成，诸如氧化铟锡或氧化锌锡等。当通过基板10观察发光组件40发光时，顶电极50可以由反射性金属制成，并且应该足够厚，以使其基本上是不透光的且是全反光镜。
综上所述，通过使底电极30和顶电极50与限定块20之间形成间隙，使形成发光组件40的各功能层的膜厚不均区域不处于空间上重叠的底电极30和顶电极50之间，这样不再有较大电流密度载流子通过各功能层的膜厚不均区域，从而不再影响像素的发光特性。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将 理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (11)

  1. 一种发光器件，其中，包括：
    基板；
    设置在所述基板上且用于限定出发光区域的限定块；
    设置在所述基板上且位于所述发光区域中的底电极，所述底电极与所述限定块之间具有间隙；
    设置在所述底电极上的发光组件；以及
    设置在所述发光组件上的顶电极。
  2. 根据权利要求1所述的发光器件，其中，所述顶电极在所述底电极上的投影位于所述底电极以内。
  3. 根据权利要求1所述的发光器件，其中，所述发光组件从所述底电极至所述顶电极顺序包括：空穴注入层、空穴传输层、发光层、电子传输层和电子注入层。
  4. 根据权利要求2所述的发光器件，其中，所述发光组件从所述底电极至所述顶电极顺序包括：空穴注入层、空穴传输层、发光层、电子传输层和电子注入层。
  5. 根据权利要求3所述的发光器件，其中，所述发光层为有机发光层或者量子点发光层。
  6. 根据权利要求4所述的发光器件，其中，所述发光层为有机发光层或者量子点发光层。
  7. 根据权利要求1所述的发光器件，其中，所述底电极和所述顶电极中的一个是透明的或半透明的，另一个是不透明且反射光的。
  8. 根据权利要求3所述的发光器件，其中，所述空穴注入层和/或所述空 穴传输层和/或所述发光层和/或所述电子传输层和/或所述电子注入层采用喷墨打印的方式制成。
  9. 根据权利要求4所述的发光器件，其中，所述空穴注入层和/或所述空穴传输层和/或所述发光层和/或所述电子传输层和/或所述电子注入层采用喷墨打印的方式制成。
  10. 根据权利要求1所述的发光器件，其中，所述限定块采用疏水性材料制成。
  11. 一种显示装置，包括发光器件，其中，所述发光器件包括：
    基板；
    设置在所述基板上且用于限定出发光区域的限定块；
    设置在所述基板上且位于所述发光区域中的底电极，所述底电极与所述限定块之间具有间隙；
    设置在所述底电极上的发光组件；以及
    设置在所述发光组件上的顶电极。
PCT/CN2017/078799 2017-02-20 2017-03-30 发光器件及显示装置 WO2018149023A1 (zh)

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