WO2015196517A1 - Oled显示结构及其制作方法 - Google Patents

Oled显示结构及其制作方法 Download PDF

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Publication number
WO2015196517A1
WO2015196517A1 PCT/CN2014/082128 CN2014082128W WO2015196517A1 WO 2015196517 A1 WO2015196517 A1 WO 2015196517A1 CN 2014082128 W CN2014082128 W CN 2014082128W WO 2015196517 A1 WO2015196517 A1 WO 2015196517A1
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Prior art keywords
layer
buffer layer
pixel
oled display
display structure
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French (fr)
Inventor
易志根
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/384,471 priority Critical patent/US9490301B2/en
Publication of WO2015196517A1 publication Critical patent/WO2015196517A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a full color OLED display structure and a method of fabricating the same. Background technique
  • flat display devices In the field of display technology, flat display devices have many advantages such as thin body, power saving, and no radiation, and have been widely used.
  • Flat panel display technologies such as Liquid Crystal Display (LCD) and Organic Light Emitting Diode (OLED) have gradually replaced CRT displays.
  • LCD Liquid Crystal Display
  • OLED Organic Light Emitting Diode
  • OLED has self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast ratio, and nearly 180. Wide viewing angle and wide operating temperature range, it can realize flexible display and large-area full-color display. It is recognized as the most promising display device in the industry.
  • the OLED generally includes: a substrate, an ITO transparent anode disposed on the substrate, a hole injection layer (HIL) disposed on the ITO transparent anode, a hole transport layer (HTL) disposed on the hole injection layer, and a hole.
  • EML electron transport layer
  • EIL electron injection layer
  • the luminescent layer usually employs a host/guest doping system.
  • the OLED is produced by depositing an organic material on the ITO anode layer by vacuum thermal evaporation, and then depositing the metal cathode by thermal evaporation or sputtering.
  • OLED full color display is the main development trend of OLED technology.
  • the OLED full-color display technology proposed now includes five methods of RGB pixel juxtaposition, color conversion, color filter method, micro cavity method and multi-layer stack method.
  • the application of the micro-resonator method to realize the OLED full-color display technology has the advantages of high luminous efficiency, high color purity, and suitable for large-area production.
  • the thickness and refractive index of the material are related.
  • most of the micro-resonators used are flat structures, and their light intensity and color have strong directionality, which is not conducive to achieving wide viewing angle display. Summary of the invention
  • the OLED display structure produced by the method can be fully colored and displayed at a wide viewing angle, and the method can simplify the production process. Helps promote the production of OLED generation lines.
  • the present invention firstly provides an OLED display structure, comprising: a substrate, an OC layer on the substrate, and a micro-resonant cavity on the OC layer; the OC layer is undulatingly undulated away from the upper surface of the substrate. a bulging portion having a convex crest portion and a concave portion smoothly connected to the crest portion, the microresonant cavity having a wave-shaped undulation conforming to an upper surface of the OC layer to eliminate illuminance intensity and color directionality Problem, achieving a wide viewing angle display.
  • the microresonator includes an emissive layer on the upper surface, a buffer layer on the emissive layer, an electrode layer on the buffer layer, a white organic layer on the electrode layer, and a half-reverse half on the white organic layer.
  • the permeable layer, the emissive layer, the buffer layer, the electrode layer, the white organic layer and the semi-transmissive layer all have undulating undulations conforming to the upper surface of the OC layer to eliminate illuminance and color directionality. Problem, achieving a wide viewing angle display.
  • the buffer layer has different thicknesses corresponding to the sub-pixels of different colors of 1, G, and B, so as to adjust the cavity length of the micro-resonant cavity to realize full-color display;
  • the material of the emission layer is Ag;
  • the buffer layer The material of the electrode layer is ITO;
  • the material of the semi-transverse layer is MgAg.
  • the distance between the highest point of the two adjacent peak portions is 8 urn, and the distance between the highest point of the peak portion and the lowest point of the trough portion is 1.61 .8 um,
  • the refractive index of the buffer layer is equal to the refractive index of the electrode layer.
  • the cavity lengths of the sub-pixels of the R, G, and B colors of the micro-resonant cavity are respectively an integer multiple of a half wavelength of red light, green light, and blue light.
  • the white organic layer includes a white light hole injection layer, a white light hole transport layer, a white light emitting layer, a white light electron transport layer, and a white light electron injection layer.
  • the present invention also provides an OLED display structure, comprising: a substrate, an OC layer on the substrate, and a micro-resonant cavity on the OC layer; the OC layer is away from the vibrating cavity and has a uniform upper surface of the oc layer Wave 'waves undulating,
  • the microresonator includes an emissive layer on the upper surface, a buffer layer on the emissive layer, an electrode layer on the buffer layer, a white organic layer on the electrode layer, and a half-reverse half on the white organic layer.
  • the permeable layer, the emissive layer, the buffer layer, the electrode layer, the white organic layer and the semi-transmissive layer all have undulating undulations conforming to the upper surface of the OC layer to eliminate illuminance and color directionality.
  • the buffer layer has different thicknesses corresponding to the sub-pixels of different colors of 1, G, and B, so as to adjust the cavity length of the micro-resonant cavity to realize full-color display;
  • the material of the emission layer is Ag;
  • the buffer layer The material of the electrode layer is ITO;
  • the material of the semi-transverse layer is MgAg;
  • the distance between the highest point of the two adjacent peak portions is 8 urn, and the distance between the highest point of the peak portion and the lowest point of the trough portion is 1.6 to 1.8 um;
  • the refractive index of the buffer layer is equal to the refractive index of the electrode layer
  • the cavity lengths of the sub-pixels of the R, G, and B colors of the micro-resonant cavity are respectively an integer multiple of a half wavelength of red light, green light, and blue light;
  • the white organic layer includes a white light hole injection layer, a white light hole transport layer, a white light emitting layer, a white light electron transport layer, and a white light electron injection layer.
  • the present invention also provides a method for fabricating an OLED display structure, comprising the following steps: Step 1. Providing a substrate;
  • Step 2 forming an OC layer on the substrate, and exposing and developing the OC layer to form an undulating upper surface having a convex peak portion and a valley of the concave portion smoothly connected to the peak portion Ministry
  • Step 3 forming an emission layer conforming to the shape of the upper surface on the upper surface of the OC layer; Step 4, forming a buffer layer of a certain thickness HI on the emission layer, the thickness HI being equal to the cavity length of the corresponding R pixel microresonator Required buffer layer thickness;
  • Step 5 coating a photoresist on the buffer layer, performing exposure and development to form a photoresist pattern, developing all the photoresist patterns corresponding to the B pixels, and developing the photoresist pattern corresponding to the G pixel into a Half Tone structure.
  • the photoresist patterns corresponding to the R pixels are all retained;
  • Step 6 The buffer layer corresponding to the B pixel without the photoresist pattern protection is removed by a thousand etching method to form a cavity length corresponding to the B pixel micro cavity; shape; ⁇ ''','; , '' Step 8, pass the thousand method Etching a portion of the buffer layer corresponding to the protection of the G pixel without the photoresist pattern, leaving the buffer layer to a certain thickness H2, the thickness H2 being equal to the thickness of the buffer layer required for the cavity length of the corresponding G pixel microresonator;
  • Step 9 removing the photoresist pattern corresponding to the R pixel, exposing the buffer layer corresponding to the R pixel; Step 10, forming an electrode layer on the stepped buffer layer;
  • Step 11 Form a white organic layer and a semi-transverse layer on the electrode layer.
  • the buffer layer is deposited on the emissive layer by a CVD method; the emissive layer is made of Ag; the buffer layer is made of SiNx; and the electrode layer is made of ITO;
  • the material of the semi-transmissive layer is MgAg; the white organic layer includes a white light hole injection layer, a white light hole transport layer, a white light emitting layer, a white light electron transport layer, and a white light electron injection layer;
  • the refractive index of the electrode layer is MgAg;
  • the white organic layer includes a white light hole injection layer, a white light hole transport layer, a white light emitting layer, a white light electron transport layer, and a white light electron injection layer; The refractive index of the electrode layer.
  • the distance L1 of the highest point of the two adjacent peak portions in the step 2 is 8 um, and the distance L2 between the highest point of the peak portion and the lowest point of the trough portion is 1.6 to 1.8 um;
  • the cavity blue light corresponding to the R pixel micro cavity An integer multiple of the half wavelength of green light. — , ; 7 , " , ,
  • the OLED display structure of the present invention can eliminate the problem of illuminance intensity and color directionality by setting the OC layer and the micro-resonance cavity layers into undulating undulations, thereby realizing wide viewing angle display;
  • the buffer layer corresponds to different thicknesses of pixels of different colors of R, G, and B, so as to adjust the cavity length of the micro-resonant cavity to be an integer multiple of half wavelength of red light, green light, and blue light, thereby realizing full color display;
  • the OLED display structure is fabricated into a stepped buffer layer having different thicknesses, so that the OLED display structure prepared by the method can be fully colored and displayed at a wide viewing angle, and the method is simple and easy to implement, and the production process can be simplified. , help to promote the production of OLED generation lines.
  • FIG. 1 is a schematic view of an OLED display structure of the present invention
  • FIG. 2 is a flow chart of a method for fabricating an OLED display structure of the present invention
  • FIG. 3 is an enlarged schematic view of step 5 of the method for fabricating an OLED display structure of the present invention
  • FIG. 4 is an enlarged schematic view of step 6 of the method for fabricating an OLED display structure of the present invention
  • FIG. Figure 6 is an enlarged schematic view of the step 8 of the method for fabricating the OLED display structure of the present invention
  • Figure 7 is an enlarged schematic view of the step 9 of the method for fabricating the OLED display structure of the present invention
  • the present invention firstly provides an OLED display structure, including: a substrate 100, an OC (Over Coat-Insulating Cover) layer 1 on the substrate 100, and a microresonance on the OC layer 1. Cavity 2.
  • OLED display structure including: a substrate 100, an OC (Over Coat-Insulating Cover) layer 1 on the substrate 100, and a microresonance on the OC layer 1. Cavity 2.
  • the OC layer 1 is undulatingly shaped away from the upper surface 1 1 of the substrate 100, and has a convex crest portion 111 and a depressed trough portion 113 that is smoothly connected to the crest portion 111.
  • the microresonator 2 includes an emissive layer 21 on the OC surface 11, a buffer layer 22 on the emissive layer 21, an electrode layer 23 on the buffer layer 22, and a white organic layer 24 on the electrode layer 23. And a semi-transflective layer 25 on the white organic layer 24.
  • the emissive layer 21, the buffer layer 22, the electrode layer 23, the white organic layer 24 and the semi-transmissive layer 25 each have an undulating undulation conforming to the upper surface 11 of the OC layer 1, that is, the microresonator 2 is in the form of a wavy undulation conforming to the upper surface 11 of the OC layer 1, so that the light is emitted in different directions to eliminate the problem that the luminous intensity and the color have directivity, and a wide viewing angle display is realized.
  • the buffer layer 22 has different thicknesses corresponding to pixels of different colors of R, G, and B to adjust the cavity length of the micro-resonant cavity 2.
  • the cavity lengths of the R, G, and B pixels of the micro-resonant cavity 2 are respectively an integer multiple of a half wavelength of red light, green light, and blue light, which conforms to the resonance mode of the light wave, thereby respectively making red, green, and blue light
  • the illuminating is enhanced, so that the different color pixels of 1, G, and B respectively emit monochromatic light of red, green, and blue light, and the full color display is realized.
  • the material of the emissive layer 21 is Ag; the material of the buffer layer 22 is SiNx; the material of the electrode layer 23 is ITO; and the material of the transflective layer 25 is MgAg.
  • the distance L1 between the two highest points of the crest portion 111 is 8 um, and the distance L2 between the highest point of the crest portion 111 and the lowest point of the trough portion 113 is 1.6 to 1.8 um.
  • the refractive index of the buffer layer 22 is equal to the refractive index of the electrode layer 23 to prevent light waves from being reflected at the interface between the buffer layer 22 and the electrode layer 23.
  • the white organic layer 24 includes a white light hole injection layer, a white light hole transport layer, a white light emitting layer, a white light electron transport layer, and a white light electron injection layer.
  • the present invention further provides a method for fabricating the above OLED display structure, including the following steps:
  • Step 1 Provide a substrate 100:
  • the substrate 100 is a transparent substrate.
  • the substrate 100 is a glass substrate.
  • Step 2 forming an OC layer 1 on the substrate 100, and exposing and developing the OC layer 1 to form an undulating upper surface 11, the upper surface 11 having a convex peak portion 111 and a peak portion 111 smoothly connected troughs 113.
  • the distance L1 between the highest points of the two adjacent peak portions 111 is 8 um
  • the distance L2 between the highest point of the peak portion 111 and the lowest point of the trough portion 113 is 1.6 to 1.8 um.
  • Step 3 forming an emission conforming to the shape of the surface 11 on the upper surface 1 1 of the OC layer 1 Layer 21.
  • the material of the emission layer 21 is Ag.
  • Step 4 Form a buffer layer 22 of a certain thickness HI on the emissive layer 21, the thickness HI being equal to the thickness of the buffer layer required for the cavity length of the R pixel microresonator.
  • the material of the buffer layer 22 is SiNx.
  • the cavity length of the corresponding R pixel microresonator is an integer multiple of the half wavelength of the red light, conforms to the light wave resonance mode, and can enhance the light emission of the red light, and the light emission of the other colors is suppressed, so that the R pixel emits red light.
  • the buffer layer 22 is deposited on the emissive layer 21 by chemical vapor deposition (CVD) deposition.
  • Step 5 applying a photoresist (PR) on the buffer layer 22, performing exposure and development to form a photoresist pattern, developing all the photoresist patterns corresponding to the B pixels, and developing the photoresist pattern corresponding to the G pixels into a Half.
  • the Tone (halftone) structure retains all the photoresist patterns corresponding to the R pixels.
  • Step 6 The buffer layer 22 corresponding to the B pixel without the photoresist pattern protection is removed by dry etching (Dry) to form a cavity length corresponding to the B pixel micro cavity.
  • Dry dry etching
  • the cavity length of the corresponding B pixel microresonator is an integer multiple of the half wavelength of the blue light, conforms to the light wave resonance mode, and can enhance the light emission of the blue light, and the light emission of the other colors is suppressed, so that the B pixel emits blue light.
  • Step 7 removing the photoresist pattern of the Half Tone structure corresponding to the G pixel by a thousand etching ablation ( Ash );
  • Step 8 The buffer layer 22 is left to a certain thickness H2 by a thousand method etching the partial buffer layer 22 corresponding to the G pixel without the photoresist pattern protection, and the thickness H2 is equal to the buffer required for the cavity length of the corresponding G pixel micro resonator. Layer thickness.
  • the cavity length of the corresponding G pixel microresonator is an integer multiple of the half wavelength of the green light, conforms to the light wave resonance mode, and can enhance the illumination of the green light, while the illumination of the other colors is suppressed, so that the G pixel emits green light.
  • Step 9 Remove the photoresist pattern corresponding to the R pixel, and expose the buffer layer 22 corresponding to the R pixel. After completion of this step 9, the buffer layer 22 has a stepped shape having different thicknesses.
  • Step 10 An electrode layer 23 is formed on the stepped buffer layer 22.
  • the material of the electrode layer 23 is ITO.
  • the refractive index of the buffer layer 22 is equal to the refractive index of the electrode layer 23 to prevent light waves from being reflected at the interface between the buffer layer 22 and the electrode layer 23.
  • Step 11 A white organic layer 24 and a semi-transmissive layer 25 are sequentially formed on the electrode layer 23 to complete the fabrication of the micro cavity 2 and the entire OLED display structure.
  • the white organic layer 24 includes a white light hole injection layer, a white light hole transport layer, White light emitting layer, white light electron transporting layer, white light electron injecting layer.
  • the material of the transflective layer 25 is MgAg.
  • the OLED display structure of the present invention can eliminate the problem of illuminance intensity and color directionality by setting the OC layer and the micro-resonance cavity layers into undulating undulations, thereby realizing wide viewing angle display;
  • the pixels corresponding to different colors of R, G, and B have different thicknesses, so as to adjust the cavity length of the micro-resonant cavity to be an integer multiple of half wavelength of red light, green light, and blue light, thereby realizing full color display;
  • the OLED display structure is fabricated by forming a undulating micro-resonant cavity on the undulating OC layer and forming a stepped buffer layer having different thicknesses, so that the OLED produced by the method is obtained.
  • the display structure is capable of full colorization and wide viewing angle display, and the method is simple and easy to implement, can simplify the production process, and contribute to the promotion of OLED generation generation.

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED显示结构及其制作方法，该OLED显示结构包括：基板(100)、位于基板(100)上的OC层(1)及位于该OC层(1)上的微共振腔(2)；所述OC层(1)远离基板(100)的上表面(11)呈波浪形起伏状，具有凸起的波峰部(111)及与波峰部(111)平滑连接的凹陷的波谷部(113)，所述微共振腔(2)呈与所述OC层(1)的上表面(11)一致的波浪形起伏状，以消除发光强度和色彩具有方向性的问题，实现宽视角显示。

Description

OLED显示结构及其制作方法 技术领域
本发明涉及显示技术领域， 尤其涉及一种全彩化 OLED显示结构及其 制作方法。 背景技术
在显示技术领域， 平面显示器件具有机身薄、 省电、 无辐射等众多优 点， 得到了广泛的应用。 液晶显示器（Liquid Crystal Display, LCD ) 与有 机发光二极管显示器 ( Organic Light Emitting Diode, OLED )等平板显示技 术已经逐步取代 CRT显示器。 其中， OLED具有自发光、 驱动电压低、 发 光效率高、 响应时间短、 清晰度与对比度高、 近 180。 视角、 使用温度范围 宽， 可实现柔性显示与大面积全彩显示等诸多优点， 被业界公认为是最有 发展潜力的显示装置。
OLED通常包括： 基板, 置于基板上的 ITO 透明阳极、 置于 ITO透明 阳极上的空穴注入层 (HIL)、 置于空穴注入层上的空穴传输层 (HTL)、 置于 空穴传输层上的发光层 (EML；)、 置于发光层上的电子传输层 (ETL；)、 置于电 子传输层上的电子注入层 (EIL) 以及置于电子注入层上的阴极。为了提高效 率， 发光层通常采用主 /客体掺杂系统。 目前， OLED 的制作方法是将有机 材料以真空热蒸镀法成膜于 ITO阳极层上， 再将金属阴极以热蒸镀或溅镀 的方式沉积上去。
OLED全彩化显示是 OLED技术的主要发展趋势。 现在提出的 OLED 全彩化显示技术包括 RGB像素并置法、 色转换法、 彩色滤光片法、 微共振 腔法和多层堆栈法五种。 其中， 应用微共振腔法实现 OLED全彩化显示技 术具有发光效率高、 色纯度高、 适合于大面积生产等优点。 利用微共振腔 效应， 使具有某特定波长的光得到增强， 而其它部分的光被削弱。 料的厚度、 折射率有关。 目前应用较多的微共振腔多为平坦型结构， 其发 光强度和色彩具有较强的方向性， 不利于实现宽视角显示。 发明内容
本发明的目的在于提供一种 OLED显示结构， 能够实现全彩化和宽视 角显示。 本发明的另一目的在于提供一种 0LED显示结构的制作方法， 该方法 简便易实现， 通过该发法制得的 OLED显示结构能够进行全彩化和宽视角 显示， 且该方法能够简化生产工艺， 有助于促进 OLED大世代线生产。
为实现上述目的， 本发明首先提供一种 OLED显示结构， 包括： 基板、 位于基板上的 OC层及位于该 OC层上的微共振腔； 所述 OC层远离基板的 上表面呈波浪形起伏状， 具有凸起的波峰部及与波峰部平滑连接的凹陷的 波谷部，所述微共振腔呈与所述 OC层的上表面一致的波浪形起伏状， 以消 除发光强度和色彩具有方向性的问题， 实现宽视角显示。
所述微共振腔包括位于所述上表面上的发射层、 位于发射层上的缓冲 层、 位于缓冲层上的电极层、 位于电极层上的白光有机层及位于白光有机 层上的半反半透层， 所述发射层、 缓冲层、 电极层、 白光有机层与半反半 透层均呈与所述 OC层的上表面一致的波浪形起伏状，以消除发光强度和色 彩具有方向性的问题， 实现宽视角显示。
所述缓冲层对应1 、 G、 B不同颜色的子像素具有不同的厚度， 以调整 所述微共振腔的腔长， 实现全彩化显示； 所述发射层的材质为 Ag; 所述缓 冲层的材质为 SiNx; 所述电极层的材质为 ITO; 所述半反半透层的材质为 MgAg。
两相邻所述波峰部最高点的距离为 8 urn, 所述波峰部最高点与波谷部 最低点的距离为 1 .6 1 .8um ,:
所述缓冲层的折射率等于电极层的折射率。
所述微共振腔对应 R、 G、 B不同颜色子像素的腔长分别为红光、绿光、 蓝光半波长的整数倍。
所述白光有机层包括白光空穴注入层、 白光空穴传输层、 白光发光层、 白光电子传输层、 及白光电子注入层。
本发明还提供一种 OLED显示结构， 包括: 基板、 位于基板上的 OC 层及位于该 OC层上的微共振腔；所述 OC层远离 振腔呈 所迷 oc层的上表面一一致的波'浪形起伏状，
Figure imgf000003_0001
具有方向性的问题， 实现宽视角显示；
所述微共振腔包括位于所述上表面上的发射层、 位于发射层上的缓冲 层、 位于缓冲层上的电极层、 位于电极层上的白光有机层及位于白光有机 层上的半反半透层， 所述发射层、 缓冲层、 电极层、 白光有机层与半反半 透层均呈与所述 OC层的上表面一致的波浪形起伏状，以消除发光强度和色 彩具有方向性的问题， 实现宽视角显示； 所述缓冲层对应1 、 G、 B不同颜色的子像素具有不同的厚度， 以调整 所述微共振腔的腔长， 实现全彩化显示； 所述发射层的材质为 Ag; 所述缓 冲层的材质为 SiNx; 所述电极层的材质为 ITO; 所述半反半透层的材质为 MgAg;
两相邻所述波峰部最高点的距离为 8 urn, 所述波峰部最高点与波谷部 最低点的距离为 1.6~1.8um;
所述缓冲层的折射率等于电极层的折射率；
所述微共振腔对应 R、 G、 B不同颜色子像素的腔长分别为红光、绿光、 蓝光半波长的整数倍；
所述白光有机层包括白光空穴注入层、 白光空穴传输层、 白光发光层、 白光电子传输层、 及白光电子注入层。
本发明还提供一种 OLED显示结构的制作方法， 包括如下步骤： 步骤 1、 提供一基板；
步骤 2、 在基板上形成 OC层， 并对 OC层进行曝光、 显影， 使其形成 呈波浪形起伏状的上表面， 该上表面具有凸起的波峰部及与波峰部平滑连 接的凹陷的波谷部；
步骤 3、 在 OC层的上表面上形成与该上表面形状一致的发射层； 步骤 4、 在发射层上形成一定厚度 HI的缓冲层， 该厚度 HI等于对应 R像素微共振腔的腔长所需的缓冲层厚度；
步骤 5、 在缓冲层上涂覆光刻胶， 并进行曝光、 显影形成光阻图形， 将 B像素对应的光阻图形全部显影掉， 将 G像素对应的光阻图形显影成 Half Tone结构， 将 R像素对应的光阻图形全部保留；
步骤 6、 通过千法蚀刻去除没有光阻图形保护的 B像素对应的缓冲层， 形成对应 B像素微共振腔的腔长； 形； Γ ' ' '、 ' ； 、 ' ' 步骤 8、 通过千法蚀刻 G像素对应的没有光阻图形保护的部分缓冲层， 使该缓冲层保留至一定厚度 H2, 该厚度 H2等于对应 G像素微共振腔的腔 长所需的缓冲层厚度；
步骤 9、 去除 R像素对应的光阻图形， 露出 R像素对应的缓冲层； 步骤 10、 在阶梯状的缓冲层上形成电极层；
步骤 11、 在电极层上依次形成白光有机层与半反半透层。
所述步骤 4中， 缓冲层通过 CVD法沉积形成在发射层上； 所述发射层 的材质为 Ag; 所述缓冲层的材质为 SiNx; 所述电极层的材质为 ITO; 所述 半反半透层的材质为 MgAg; 所述白光有机层包括白光空穴注入层、 白光空 穴传输层、 白光发光层、 白光电子传输层、 白光电子注入层； 所述缓冲层 的折射率等于电极层的折射率。
所述步骤 2中两相邻波峰部最高点的距离 L1为 8 um,所述波峰部最高 点与波谷部最低点的距离 L2为 1.6~1.8um; 所述对应 R像素微共振腔的腔 蓝光 绿光半波长的整数倍。 — 、 ； 7 、 " 、
本发明的有益效果： 本发明的 OLED显示结构， 通过将 OC层及微共 振腔各组成层设置为波浪形起伏状， 能够消除发光强度和色彩具有方向性 的问题， 实现宽视角显示； 通过设置缓冲层对应 R、 G、 B不同颜色的像素 具有不同的厚度， 以调整所述微共振腔的腔长分别为红光、 绿光、 蓝光半 波长的整数倍， 实现全彩化显示； 本发明的 OLED显示结构的制作方法， 成具有不同厚度的阶梯状的缓冲层， 使得由该发法制得的 OLED显示结构 能够进行全彩化和宽视角显示， 且该方法简便易实现， 能够简化生产工艺， 有助于促进 OLED大世代线生产。 附图说明
为了能更进一步了解本发明的特征以及技术内容， 请参阅以下有关本 发明的详细说明与附图， 然而附图仅提供参考与说明用， 并非用来对本发 明加以限制。
附图中，
图 1为本发明 OLED显示结构的示意图；
图 2为本发明 OLED显示结构的制作方法的流程图；
图 3为本发明 OLED显示结构的制作方法的步骤 5的放大示意图； 图 4为本发明 OLED显示结构的制作方法的步骤 6的放大示意图； 图 5为本发明 OLED显示结构的制作方法的步骤 7的放大示意图； 图 6为本发明 OLED显示结构的制作方法的步骤 8的放大示意图； 图 7为本发明 OLED显示结构的制作方法的步骤 9的放大示意图； 图 8为本发明 OLED显示结构的制作方法的步骤 10的放大示意图。 具体实施方式
下面结合附图， 通过对本发明的具体实施方式详细描述， 将使本发明 的技术方案及其它有益效果显而易见。 请参阅图 1,同时参阅图 8, 本发明首先提供一种 OLED显示结构， 包 括： 基板 100、 位于基板 100上的 OC ( Over Coat- 绝缘覆盖 )层 1及位于 该 OC层 1上的微共振腔 2。
所述 OC层 1远离基板 100的上表面 1 1呈波浪形起伏状， 具有凸起的 波峰部 111及与波峰部 111平滑连接的凹陷的波谷部 113。 所述微共振腔 2 包括位于所述 OC表面 11上的发射层 21、 位于发射层 21上的缓冲层 22、 位于緩冲层 22上的电极层 23、位于电极层 23上的白光有机层 24及位于白 光有机层 24上的半反半透层 25。 所述发射层 21、 缓冲层 22、 电极层 23、 白光有机层 24与半反半透层 25均呈与所述 OC层 1的上表面 11一致的波 浪形起伏状， 即所述微共振腔 2呈与所述 OC层 1的上表面 11一致的波浪 形起伏状， 使得光线向不同方向射出， 以消除发光强度和色彩具有方向性 的问题， 实现宽视角显示。 所述缓冲层 22对应 R、 G、 B不同颜色的像素 具有不同的厚度， 以调整所述微共振腔 2的腔长。 所述微共振腔 2对应 R、 G、 B不同颜色像素的腔长分别为红光、 绿光、 蓝光半波长的整数倍， 符合 光波的共振模式， 从而分别使红光、 绿光、 蓝光的发光得到加强， 使1 、 G、 B不同颜色像素分别发出红光、 绿光、 蓝光的单色光， 实现全彩化显示。
进一步的，所述发射层 21的材质为 Ag;所述缓冲层 22的材质为 SiNx; 所述电极层 23的材质为 ITO; 所述半反半透层 25的材质为 MgAg。
两相邻所述波峰部 111最高点的距离 L1为 8 um，所述波峰部 111最高 点与波谷部 113最低点的距离 L2为 1.6~1.8um。
所述缓冲层 22的折射率等于电极层 23的折射率， 避免光波在缓冲层 22与电极层 23的交界面上发生反射。
所述白光有机层 24包括白光空穴注入层、 白光空穴传输层、 白光发光 层、 白光电子传输层、 白光电子注入层。
请参阅图 2至图 8, 同时参阅图 1 , 本发明还提供一种上述 OLED显示 结构的制作方法， 包括如下步骤：
步骤 1、 提供一基板 100：
所述基板 100为透明基板， 优选的， 所述基板 100为玻璃基板。
步骤 2、 在基板 100上形成 OC层 1 , 并对 OC层 1进行曝光、 显影， 使其形成呈波浪形起伏状的上表面 11， 该上表面 11具有凸起的波峰部 111 及与波峰部 111平滑连接的 陷的波谷部 113。
具体的， 两相邻所述波峰部 111最高点的距离 L1为 8 um， 所述波峰部 111最高点与波谷部 113最低点的距离 L2为 1.6~1.8um。
步骤 3、 在 OC层 1的上表面 1 1上形成与上该表面 1 1形状一致的发射 层 21。
所述发射层 21的材质为 Ag。
步骤 4、 在发射层 21上形成一定厚度 HI的缓冲层 22, 该厚度 HI等 于对应 R像素微共振腔的腔长所需的缓冲层厚度。
所述缓冲层 22的材质为 SiNx。
所述对应 R像素微共振腔的腔长为红光半波长的整数倍， 符合光波共 振模式， 能够使红光的发光得到加强， 而其他颜色的发光得到抑制， 使 R 像素发出红光。
所述缓冲层 22通过化学气相沉积（ CVD )法沉积形成在发射层 21上。 步骤 5、 在缓冲层 22上涂覆光刻胶 ( PR ). 并进行曝光、 显影形成光 阻图形， 将 B像素对应的光阻图形全部显影掉， 将 G像素对应的光阻图形 显影成 Half Tone (半色调）结构， 将 R像素对应的光阻图形全部保留。
步骤 6、 通过干法蚀刻 （Dry )去除没有光阻图形保护的 B像素对应的 缓冲层 22, 形成对应 B像素微共振腔的腔长。
所述对应 B像素微共振腔的腔长为蓝光半波长的整数倍， 符合光波共 振模式， 能够使蓝光的发光得到加强， 而其他颜色的发光得到抑制， 使 B 像素发出蓝光。
步骤 7、 通过千蚀刻法烧蚀 ( Ash )去除 G像素对应的 Half Tone结构 的光阻图形；
步骤 8、 通过千法蚀刻 G像素对应的没有光阻图形保护的部分缓冲层 22, 使该缓冲层 22保留至一定厚度 H2， 该厚度 H2等于对应 G像素微共 振腔的腔长所需的缓冲层厚度。
所述对应 G像素微共振腔的腔长为绿光半波长的整数倍， 符合光波共 振模式， 能够使绿光的发光得到加强， 而其他颜色的发光得到抑制， 使 G 像素发出绿光。
步骤 9、 去除 R像素对应的光阻图形， 露出 R像素对应的缓冲层 22。 完成该步骤 9后， 所述缓冲层 22呈具有不同厚度的阶梯状。
步骤 10、 在阶梯状的缓冲层 22上形成电极层 23。
所述电极层 23的材质为 ITO。
所述缓冲层 22的折射率等于电极层 23的折射率， 避免光波在缓冲层 22与电极层 23的交界面上发生反射。
步骤 11、 在电极层 23上依次形成白光有机层 24与半反半透层 25， 完 成微共振腔 2及整个 OLED显示结构的制作。
具体的， 所述白光有机层 24包括白光空穴注入层、 白光空穴传输层、 白光发光层、 白光电子传输层、 白光电子注入层。
所述半反半透层 25的材质为 MgAg。
综上所述， 本发明的 OLED显示结构， 通过将 OC层及微共振腔各组 成层设置为波浪形起伏状， 能够消除发光强度和色彩具有方向性的问题， 实现宽视角显示； 通过设置緩冲层对应 R、 G、 B不同颜色的像素具有不同 的厚度， 以调整所述微共振腔的腔长分别为红光、 绿光、 蓝光半波长的整 数倍， 实现全彩化显示； 本发明的 OLED显示结构的制作方法， 通过在波 浪形起伏状的 OC层上形成同样呈波浪形起伏状的微共振腔，并形成具有不 同厚度的阶梯状的缓冲层， 使得由该发法制得的 OLED显示结构能够进行 全彩化和宽视角显示， 且该方法简便易实现， 能够简化生产工艺， 有助于 促进 OLED大世代线生产。
以上所述， 对于本领域的普通技术人员来说， 可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形， 而所有这些改变和变形 都应属于本发明后附的权利要求的保护范围。

Claims

1、 一种 OLED显示结构， 包括: 基板、 位于基板上的 0C层及位于该
0C层上的微共振腔； 所述 OC层远离基板的上表面呈波浪形起伏状， 具有 述 OC层的上表面一致的波浪形起伏状，以消除发光强度和色 ¾具有方向性 的问题， 实现宽视角显示。
2、 如权利要求 1所述的 OLED显示结构， 其中， 所述微共振腔包括位 于所述上表面上的发射层、 位于发射层上的缓冲层、 位于缓冲层上的电极
表面二致的波浪形起伏一状， 以消除发光强度和色彩具有 ί向性的问题，'实 现宽视角显示。
3、 如权利要求 2所述的 OLED显示结构， 其中， 所述缓冲层对应1 、 G、 B不同颜色的子像素具有不同的厚度， 以调整所述微共振腔的腔长， 实 现全彩化显示； 所述发射层的材质为 Ag; 所述缓冲层的材质为 SiNx; 所述 电极层的材质为 ITO; 所述半反半透层的材质为 MgAg。
4、 如权利要求 1所述的 OLED显示结构， 其中， 两相邻所述波峰部最 高点的距离为 8 urn , 所述波峰部最高点与波谷部最低点的距离为 1.6~1.8um。
5、 如权利要求 1所述的 OLED显示结构， 其中， 所述緩冲层的折射率 等于电极层的折射率。
6、如权利要求 1所述的 OLED显示结构，其中 ,所述微共振腔对应 R、
G、 B不同颜色子像素的腔长分别为红光、 绿光、 蓝光半波长的整数倍。
7、 如权利要求 1所述的 OLED显示结构， 其中， 所述白光有机层包括 白光空穴注入层、 白光空穴传输层、 白光发光层、 白光电子传输层、 及白 光电子注入层。
8、 一种 OLED显示结构， 包括： 基板、 位于基板上的 OC层及位于该 OC层上的微共振腔； 所述 OC层远离基板的上表面呈波浪形起伏状， 具有 述 oc层的上表面一一致的波浪形起伏状，以消除发光强度和色 ί具有方向性 的问题， 实现宽视角显示；
其中， 所述微共振腔包括位于所述上表面上的发射层、 位于发射层上 的缓冲层、 位于缓冲层上的电极层、 位于电极层上的白光有机层及位于白 光有机层上的半反半透层， 所述发射层、 缓冲层、 电极层、 白光有机层与 半反半透层均呈与所述 OC层的上表面一致的波浪形起伏状，以消除发光强 度和色彩具有方向性的问题， 实现宽视角显示；
其中， 所述緩冲层对应 R、 G、 B不同颜色的子像素具有不同的厚度， 以调整所述微共振腔的腔长， 实现全彩化显示； 所述发射层的材质为 Ag; 所述緩冲层的材质为 SiNx; 所述电极层的材质为 ITO; 所述半反半透层的 材质为 MgAg;
其中， 两相邻所述波峰部最高点的距离为 8 um， 所述波峰部最高点与 波谷部最低点的距离为 1.6~1.8um;
其中， 所述缓冲层的折射率等于电极层的折射率；
其中，所述微共振腔对应 R、 G、 B不同颜色子像素的腔长分别为红光、 绿光、 蓝光半波长的整数倍；
其中， 所述白光有机层包括白光空穴注入层、 白光空穴传输层、 白光 发光层、 白光电子传输层、 及白光电子注入层。
9、 一种 OLED显示结构的制作方法， 包括如下步骤：
步骤 1、 提供一基板；
步骤 2、 在基板上形成 OC层， 并对 OC层进行曝光、 显影， 使其形成 呈波浪形起伏状的上表面， 该上表面具有凸起的波峰部及与波峰部平滑连 接的凹陷的波谷部；
步骤 3、 在 OC层的上表面上形成与该上表面形状一致的发射层； 步骤 4、 在发射层上形成一定厚度 HI的缓冲层， 该厚度 HI等于对应 R像素微共振腔的腔长所需的缓冲层厚度；
步骤 5、 在缓冲层上涂覆光刻胶， 并进行曝光、 显影形成光阻图形， 将 B像素对应的光阻图形全部显影掉， 将 G像素对应的光阻图形显影成半色 调结构， 将 R像素对应的光阻图形全部保留；
步骤 6、 通过干法蚀刻去除没有光阻图形保护的 B像素对应的缓冲层， 形成对应 B像素微共振腔的腔长； 步骤 8、 通过干法蚀刻 G像素对应的没有光阻图形保护的部分缓冲层， 使该缓冲层保留至一定厚度 H2， 该厚度 H2等于对应 G像素微共振腔的腔 长所需的缓冲层厚度；
步骤 9、 去除 R像素对应的光阻图形， 露出 R像素对应的缓冲层； 步骤 10、 在阶梯状的缓冲层上形成电极层； 步骤 11、 在电极层上依次形成白光有机层与半反半透层。
10、 如权利要求 9所述的 OLED显示结构的制作方法， 其中， 所述步 骤 4 中， 缓冲层通过 CVD法沉积形成在发射层上； 所述发射层的材质为 Ag; 所述缓冲层的材质为 SiNx; 所述电极层的材质为 ITO; 所述半反半透 层的材质为 MgAg;所述白光有机层包括白光空穴注入层、白光空穴传输层、 白光发光层、 白光电子传输层、 白光电子注入层； 所述缓冲层的折射率等 于电极层的折射率。
11、 如权利要求 9所述的 OLED显示结构的制作方法， 其中， 所述步 骤 2中两相邻波峰部最高点的距离 L1为 8 um,所述波峰部最高点与波谷部 最低点的距离 L2为 1.6~1.8um; 所述对应 R像素微共振腔的腔长、 对应 B 像素微共振腔的腔长与对应 G像素微共振腔的腔长分别为红光、 蓝光、 绿 光半波长的整数倍。
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