WO2015163054A1 - Substrat à base de métal, procédé de fabrication d'un substrat à base de métal, carte de circuits imprimés à base de métal, et dispositif électronique - Google Patents

Substrat à base de métal, procédé de fabrication d'un substrat à base de métal, carte de circuits imprimés à base de métal, et dispositif électronique Download PDF

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Publication number
WO2015163054A1
WO2015163054A1 PCT/JP2015/058430 JP2015058430W WO2015163054A1 WO 2015163054 A1 WO2015163054 A1 WO 2015163054A1 JP 2015058430 W JP2015058430 W JP 2015058430W WO 2015163054 A1 WO2015163054 A1 WO 2015163054A1
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Prior art keywords
metal
metal base
base substrate
epoxy resin
layer
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PCT/JP2015/058430
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English (en)
Japanese (ja)
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小宮谷　壽郎
大輔 北原
杠　幸治
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住友ベークライト株式会社
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Publication of WO2015163054A1 publication Critical patent/WO2015163054A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/44—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a metal base substrate, a metal base substrate manufacturing method, a metal base circuit substrate, and an electronic device.
  • circuit boards equipped with electronic components such as semiconductor elements are used.
  • a metal base substrate provided with a metal layer formed of a metal foil on an insulating resin layer on a metal substrate is preferably used for applications requiring high current. It has been.
  • an inverter device or a power semiconductor device in which an electronic component such as an insulated gate bipolar transistor (IGBT: Insulated Gate Bipolar Transistor) and a semiconductor device such as a diode, a resistor, and a capacitor is mounted on a circuit-processed metal base substrate is known. Yes.
  • Patent Document 1 discloses a metal base substrate in which a 0.21 mm copper foil is used as an outer layer circuit of the metal base substrate.
  • the thickness of the copper foil is preferably used because it can be used for high current applications while ensuring the circuit processability of the copper foil.
  • the metal base substrate described in the cited document 1 has a good insulating property at the start of use, but this insulating property gradually decreases when used for a long time. It has been found that there is room for improvement in this regard. The reason for this is not clear, but when a relatively thick copper foil of 0.21 mm is used, the difference in behavior during use between the insulating resin layer and the metal foil appears remarkably, so both are easy to peel off. It is thought that it is becoming.
  • the present invention provides a metal base substrate that has a metal layer having a specific thickness excellent in circuit processability and can be used for a high current application for a long period of time.
  • a metal base substrate comprising a metal substrate, an insulating resin layer provided on the metal substrate, and a metal layer provided on the insulating resin layer,
  • the insulating resin layer is composed of an epoxy resin composition
  • the epoxy resin composition includes a phenoxy resin
  • a metal base substrate is provided in which the metal layer is a copper foil having a thickness in the range of 170 ⁇ m to 230 ⁇ m.
  • the thickness of the metal layer is a copper foil in a specific range, sufficient circuit processability can be ensured.
  • an insulating resin layer is comprised from the epoxy resin composition containing a phenoxy resin, it can be equipped with moderate softness
  • the adhesion between the insulating resin layer and the metal layer is improved, and a metal base substrate that can be used for a high current application over a long period of time can be provided. By this effect, a metal base substrate that can provide a highly durable electronic device can be obtained.
  • a method for producing a metal base substrate comprising a metal substrate, an insulating resin layer provided on the metal substrate, and a metal layer provided on the insulating resin layer, Applying an epoxy resin composition to the metal layer and heating and drying to obtain a metal foil with resin; Laminating the metal foil with resin on the metal substrate to obtain a laminate; And heat and pressure curing the laminate,
  • the epoxy resin composition includes a phenoxy resin
  • the metal layer is a copper foil having a thickness in the range of 170 ⁇ m or more and 230 ⁇ m or less.
  • a metal base circuit board obtained by circuit-processing the metal layer of the metal base board described above.
  • a metal base substrate that has a metal layer having a specific thickness that is excellent in circuit processability, and that can be used for high-current applications over a long period of time.
  • FIG. 1 is a cross-sectional view of a metal base substrate according to an embodiment of the present invention.
  • the metal base substrate 100 includes a metal substrate 101, an insulating resin layer 102 provided on the metal substrate 101, and a metal layer 103 provided on the insulating resin layer 102.
  • the metal substrate 101 has a role of radiating heat accumulated in the metal base substrate 100.
  • the metal substrate 101 is not particularly limited as long as it is a heat-dissipating metal substrate.
  • the metal substrate 101 is an aluminum substrate.
  • the thickness of the metal substrate 101 can be appropriately set as long as the object of the present invention is not impaired.
  • the thickness of the metal substrate 101 is, for example, not less than 100 ⁇ m and not more than 5000 ⁇ m.
  • the heat dissipation can be further improved.
  • the thickness of the metal substrate 101 is equal to or less than the above upper limit value, workability such as bending of the metal base substrate 100 can be improved.
  • the metal layer 103 is provided on an insulating resin layer 102, which will be described later, and is subjected to circuit processing.
  • the metal constituting the metal layer 103 is copper.
  • the thickness of the metal layer 103 is 170 ⁇ m or more, preferably 200 ⁇ m or more. By using the metal layer 103 having a thickness greater than or equal to this value, even when a circuit is processed and an electronic device for high current use is manufactured, it is possible to suppress a high voltage from being applied to the circuit.
  • the thickness of the metal layer 103 is 230 ⁇ m or less, preferably 220 ⁇ m or less. By using the metal layer 103 having a thickness less than or equal to this numerical value, the metal base substrate 100 as a whole can be thinned. Further, if the metal layer 103 having a thickness equal to or less than this value is used, sufficient circuit processability can be ensured.
  • the metal layer 103 may be a copper foil that can be obtained in a plate shape, or a copper foil that can be obtained in a roll shape. However, in manufacturing the metal base substrate 100, it is preferable to use a metal material available in a roll shape for the metal layer 103 because manufacturing efficiency can be improved.
  • the insulating resin layer 102 is a layer for bonding the metal layer 103 to the metal substrate 101.
  • the thickness of the insulating resin layer 102 is appropriately set in accordance with the object of the invention, but is preferably 40 ⁇ m or more and 300 ⁇ m or less, and from the viewpoint of achieving both heat dissipation and insulation in the entire metal base substrate 100, it is 60 ⁇ m or more and 200 ⁇ m or less. More preferably.
  • the thickness of the insulating resin layer 102 is set to be equal to or greater than the above lower limit value, it is possible to sufficiently reduce the generation of thermal stress due to the difference in thermal expansion coefficient between the metal substrate 101 and the insulating resin layer 102 with the insulating resin layer 102. . Furthermore, the insulating property of the metal base substrate 100 is improved.
  • the insulating resin layer 102 is formed by curing an epoxy resin composition containing an epoxy resin.
  • this epoxy resin composition can be suitably selected according to the use to be used, it contains at least an epoxy resin (A) and a phenoxy resin (C), and, if necessary, an inorganic filler (B), An epoxy resin composition containing a curing agent (D) and a coupling agent (E) can be used.
  • the epoxy resin composition of the present embodiment includes at least an epoxy resin (A) and a phenoxy resin (C), and, if necessary, an inorganic filler (B), a curing agent (D), and a coupling agent (E ).
  • the epoxy resin (A) for example, a naphthalene type epoxy resin (A1) can be included.
  • the naphthalene type epoxy resin (A1) refers to one having a naphthalene ring skeleton and having two or more glycidyl groups.
  • the content of the naphthalene type epoxy resin (A1) is preferably 20% by mass or more and 80% by mass or less, more preferably 40% by mass or more and 60% by mass or less, with respect to 100% by mass of the epoxy resin (A). It is.
  • naphthalene type epoxy resin (A1) for example, any one of the following formulas (5) to (7) can be used.
  • m and n represent the number of substituents on the naphthalene ring, and each independently represents an integer of 1 to 7.
  • Me represents a methyl group
  • l, m, and n are natural numbers of 1 or more.
  • l, m, and n are preferably 10 or less.
  • naphthalene type epoxy resin (A1) a naphthylene ether type epoxy resin represented by the following formula (8) can also be used.
  • n is an integer of 1 or more and 20 or less
  • l is an integer of 1 or more and 2 or less
  • R 1 is independently a hydrogen atom, a benzyl group, an alkyl group, or the following formula (9)
  • each R 2 is independently a hydrogen atom or a methyl group.
  • Ar is each independently a phenylene group or a naphthylene group
  • R 2 is each independently a hydrogen atom or a methyl group
  • m is an integer of 1 or 2.
  • Examples of the naphthylene ether type epoxy resin represented by the above formula (8) include those represented by the following formula (10).
  • n is an integer of 1 or more and 20 or less, preferably an integer of 1 or more and 10 or less, more preferably an integer of 1 or more and 3 or less.
  • R is independently a hydrogen atom or (It is a structure represented by the following formula (11), preferably a hydrogen atom.)
  • n is an integer of 1 or 2.
  • Examples of the naphthylene ether type epoxy resin represented by the above formula (10) include those represented by the following formulas (12) to (16).
  • an epoxy resin other than the naphthalene type epoxy resin (A1) can be used as the epoxy resin (A).
  • the types of epoxy resins that can be used include, for example, bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, bisphenol E type epoxy resins, bisphenol M type epoxy resins, bisphenol P type epoxy resins, and bisphenols.
  • Bisphenol type epoxy resins such as Z type epoxy resins; Novolak type epoxy resins such as phenol novolak type epoxy resins, cresol novolak type epoxy resins, tetraphenol group ethane type novolak type epoxy resins;
  • An epoxy resin such as an arylalkylene type epoxy resin such as a type epoxy resin.
  • content of the epoxy resin (A) contained in an epoxy resin composition is suitably adjusted according to the objective, 1 mass% or more and 23 mass% with respect to 100 mass% of total solids of an epoxy resin composition. The following is preferable, and 2 mass% or more and 15 mass% or less are more preferable.
  • content of the epoxy resin (A) is not less than the above lower limit value, the handleability is improved and the insulating resin layer 102 can be easily formed.
  • content of the epoxy resin (A) is not more than the above upper limit value, the strength and flame retardancy of the insulating resin layer 102 are further improved, and the thermal conductivity of the insulating resin layer 102 is further improved.
  • an inorganic filler (B) is used.
  • silicates such as talc, calcined clay, unfired clay, mica and glass
  • oxides such as titanium oxide, alumina, boehmite, silica and fused silica
  • carbonates such as calcium carbonate, magnesium carbonate and hydrotalcite
  • Hydroxides such as aluminum hydroxide, magnesium hydroxide, calcium hydroxide, sulfates or sulfites such as barium sulfate, calcium sulfate, calcium sulfite
  • An inorganic filler such as borate such as sodium oxide
  • nitride such as aluminum nitride, boron nitride, silicon nitride, and carbon nitride
  • titanate such as strontium titanate and barium titanate can be used.
  • boron nitride and alumina are examples of silicate
  • alumina When alumina is used as the inorganic filler (B), it is a mixed system of three components (large particle size, medium particle size, small particle size) having different average particle sizes, the large particle size component is spherical, and the medium particle size component
  • the small particle size component is preferably polyhedral. More specifically, alumina belongs to the first particle size range in which the average particle size is 5.0 ⁇ m or more and 50 ⁇ m or less, preferably 5.0 ⁇ m or more and 25 ⁇ m or less, and the circularity is 0.80 or more and 1.0 or less.
  • the average particle size belongs to the third particle size range of 0.1 ⁇ m or more and less than 1.0 ⁇ m, and the circularity is 0.00. It is preferable to be a mixture of 50 to 0.90, preferably 0.70 to 0.80 small particle size alumina.
  • the particle diameter can be measured by dispersing the alumina in water by ultrasonic treatment for 1 minute using a laser diffraction / scattering particle size distribution analyzer SALD-7000. Further, the circularity can be measured by using a flow type particle image analyzer FPIA-3000 manufactured by Sysmex and adopting the sample preparation method and diffraction method described in Examples.
  • the medium particle size component is filled in the gap between the large particle size components, and the small particle size component is filled in the gap between the medium particle size components, so that the alumina filling property is improved and the contact area between the alumina particles is increased. Can be made larger.
  • the thermal conductivity of the insulating resin layer 102 can be further improved.
  • the solder heat resistance, flex resistance, and insulation of the insulating resin layer 102 can be further improved.
  • the adhesion between the insulating resin layer 102 and the metal substrate 101 can be further improved. Due to these synergistic effects, the insulation reliability of the metal base substrate 100 can be further enhanced.
  • the content of the inorganic filler (B) contained in the epoxy resin composition is, for example, 75% by mass to 95% by mass with respect to 100% by mass of the total solid content of the epoxy resin composition, and more preferably. It is 80 mass% or more and 90 mass% or less.
  • the content of the inorganic filler (B) high as in the above numerical range, the contact area between the particles of the inorganic filler increases.
  • alumina can be used as the inorganic filler (B) and can be included in the epoxy resin composition within the above numerical range.
  • the thermal conductivity of the insulating resin layer 102 can be improved, and the heat dissipation of the electronic device 11 (see FIG. 2) can be improved. Therefore, the heat of the electronic component can be sufficiently transferred to the outside. Thereby, the highly durable electronic device 11 can be obtained.
  • the content of alumina belonging to the first particle size range is preferably 65% by mass or more and 85% by mass or less with respect to 100% by mass of the whole alumina.
  • the content of alumina belonging to the particle size range is preferably 10% by mass or more and 20% by mass or less, and the content of alumina belonging to the third particle size range is preferably 5% by mass or more and 18% by mass or less.
  • the epoxy resin composition includes a phenoxy resin (C).
  • a phenoxy resin (C) By including the phenoxy resin (C), the elastic modulus of the insulating resin layer 102 can be reduced, and in this case, the stress relaxation force of the metal base substrate 100 can be improved.
  • peeling between the metal layer 103 and the insulating resin layer 102 can be suppressed.
  • defects such as cracks may occur at or near the solder joint where the electronic component and the metal base substrate 100 are joined, even under a rapid heating / cooling environment. Will be suppressed.
  • the heat cycle characteristics of the metal base substrate 100 can be further improved.
  • the bending resistance of the insulating resin layer 102 can be improved by including the phenoxy resin (C)
  • the handling property of the insulating resin layer 102 due to high filling with the inorganic filler (B) is suppressed. Can do.
  • liquidity at the time of a press reduces by viscosity increase and it can suppress that a void etc. generate
  • the adhesion between the insulating resin layer 102 and the metal substrate 101 can be improved. Due to these synergistic effects, the insulation reliability of the metal base substrate 100 can be further enhanced.
  • Examples of the phenoxy resin (C) include a phenoxy resin having a bisphenol skeleton, a phenoxy resin having a naphthalene skeleton, a phenoxy resin having an anthracene skeleton, and a phenoxy resin having a biphenyl skeleton.
  • a phenoxy resin having a structure having a plurality of these skeletons can also be used.
  • bisphenol A type or bisphenol F type phenoxy resin it is preferable to use bisphenol A type or bisphenol F type phenoxy resin.
  • a phenoxy resin having both a bisphenol A skeleton and a bisphenol F skeleton may be used.
  • the weight average molecular weight of the phenoxy resin (C) is not particularly limited, but is preferably 4.0 ⁇ 10 4 or more and 8.0 ⁇ 10 4 or less.
  • the weight average molecular weight of phenoxy resin (C) is a value in terms of polystyrene measured by gel permeation chromatography (GPC).
  • the content of the phenoxy resin (C) is, for example, preferably 1% by mass to 15% by mass, more preferably 2% by mass to 10% by mass, with respect to 100% by mass of the total solid content of the epoxy resin composition. is there. By doing in this way, what has moderate softness
  • curing agent (D) (curing catalyst) examples include organic metals such as zinc naphthenate, cobalt naphthenate, tin octylate, cobalt octylate, bisacetylacetonate cobalt (II), and trisacetylacetonate cobalt (III).
  • organic metals such as zinc naphthenate, cobalt naphthenate, tin octylate, cobalt octylate, bisacetylacetonate cobalt (II), and trisacetylacetonate cobalt (III).
  • Dicyandiamide diethylenetriamine, triethylenetetramine, metaxylylenediamine, diaminodiphenylmethane, diaminodiethyldiphenylmethane, metaphenylenediamine, diaminodiphenylsulfone, isophoronediamine, norbornenediamine, triethylamine, tributylamine, diazabicyclo [2,2,2]
  • Amine-based curing agents such as octane; 2-phenyl-imidazole, 2-phenyl-4-methylimidazole, 2-ethyl-4-methylimidazole, 2-ethyl-4 Imidazole-based curing agents such as ethylimidazole, 2-phenyl-4-methyl-5-hydroxyimidazole, 2-phenyl-4,5-dihydroxyimidazole; triphenylphosphine, tri-p-tolylphosphine, tetraphenylphosphonium
  • curing agent (D) As a hardening
  • an amine-based curing agent and an imidazole-based curing agent are preferable in that a cured product having excellent adhesiveness, reacting at a relatively low temperature, and excellent heat resistance can be obtained.
  • curing agent (D) is not specifically limited, For example, it is 0.05 mass% or more and 3.0 mass% or less with respect to 100 mass% of total solid content of an epoxy resin composition.
  • the epoxy resin composition may include a coupling agent (E).
  • the coupling agent (E) can improve the wettability of the interface between the epoxy resin (A) and the inorganic filler (B).
  • the coupling agent (E) any of those usually used can be used. Specifically, an epoxy silane coupling agent, a cationic silane coupling agent, an aminosilane coupling agent, a titanate coupling agent, and a silicone oil type. It is preferable to use one or more coupling agents selected from coupling agents.
  • the amount of the coupling agent (E) added depends on the specific surface area of the inorganic filler (B) and is not particularly limited, but is 0.05 parts by mass or more and 3 parts by mass with respect to 100 parts by mass of the inorganic filler (B). The following is preferable, and 0.1 to 2 parts by mass is particularly preferable.
  • the epoxy resin composition can contain an antioxidant, a leveling agent and the like as long as the effects of the present invention are not impaired.
  • the epoxy resin composition of the present embodiment preferably has the following viscosity behavior.
  • the melt viscosity initially decreases and the minimum melt viscosity
  • the minimum melt viscosity is in the range of 1 ⁇ 10 3 Pa ⁇ s to 1 ⁇ 10 5 Pa ⁇ s.
  • the epoxy resin (A) and the inorganic filler (B) are separated, and only the epoxy resin (A) can be prevented from flowing, and a more homogeneous insulating resin Layer 102 can be obtained.
  • the minimum melt viscosity is not more than the above upper limit value, the wettability of the epoxy resin composition to the metal substrate 101 can be improved, and the adhesion between the insulating resin layer 102 and the metal substrate 101 can be further improved.
  • the epoxy resin composition of the present embodiment preferably has a temperature at which the minimum melt viscosity is reached in the range of 60 ° C. or higher and 100 ° C. or lower. Moreover, the epoxy resin composition of the present embodiment preferably has a flow rate of 15% or more and less than 60%.
  • the flow rate can be measured by the following procedure. First, 5-7 sheets of metal foil having a resin layer formed of the epoxy resin composition of the present embodiment are cut into a predetermined size (50 mm ⁇ 50 mm), and the weight is measured. Next, after pressing for 5 minutes between hot plates maintained at an internal temperature of 175 ° C. and cooling, the resin that has flowed out is carefully dropped and the weight is measured again. The flow rate can be obtained by the following formula (I).
  • an epoxy resin composition having such a viscosity behavior for example, the type and amount of the epoxy resin (A) described above, the type and amount of the inorganic filler (B), and the type of phenoxy resin (C) The amount may be adjusted as appropriate. In this embodiment, since the phenoxy resin (C) having good fluidity is used, the above-described viscosity characteristics are easily obtained.
  • the insulating resin layer 102 has high thermal conductivity. Specifically, the thermal conductivity in the thickness direction of the insulating resin layer 102 measured by a laser flash method is preferably 2.0 W / (m ⁇ K) or more, and 3.0 W / (m ⁇ K). More preferably. Thereby, the heat from the electronic component can be easily transmitted to the metal substrate 101 through the insulating resin layer 102.
  • the insulating resin layer 102 has increased rigidity and can reduce warping of the insulating resin layer 102. As a result, positional displacement of the electronic component with respect to the metal base substrate 100 can be suppressed, and the gap between the electronic component and the metal base substrate 100 can be suppressed.
  • the glass transition temperature is preferably 100 ° C. or higher and 150 ° C. or lower, more preferably 110 ° C. or higher and 140 ° C. or lower.
  • the glass transition temperature of the insulating resin layer 102 can be measured as follows based on JIS C 6481.
  • a dynamic viscoelasticity measuring device (DMA / 983 manufactured by TA Instruments Inc.), applying a tensile load under a nitrogen atmosphere (200 ml / min), a frequency of 1 Hz, a temperature of ⁇ 50 ° C. to 300 ° C. The range is measured at a temperature rising rate of 5 ° C./min, and the glass transition temperature Tg is obtained from the peak position of tan ⁇ .
  • DMA / 983 manufactured by TA Instruments Inc.
  • the elastic modulus (storage elastic modulus) E ′ of 25 ° C. of the insulating resin layer 102 increases the rigidity and can reduce the warp of the insulating resin layer 102. As a result, it is possible to suppress the displacement of the electronic component with respect to the circuit board, From the viewpoint of further enhancing the connection reliability between the electronic component and the circuit board, it is preferably 30 GPa or more and 70 GPa or less.
  • the said storage elastic modulus is measured with the dynamic viscoelasticity measuring apparatus.
  • the storage elastic modulus E ′ is a storage elastic modulus of 25 ° C. when a tensile load is applied to the insulating resin layer 102 and measured from ⁇ 50 ° C. to 300 ° C. at a frequency of 1 Hz and a temperature increase rate of 5-10 ° C./min. Value.
  • the dielectric breakdown voltage of the insulating resin layer 102 is preferably 50 kV / mm or more, and more preferably 54 kV / mm or more. If the dielectric breakdown voltage is equal to or higher than the above value, sufficient insulation can be ensured even when the metal base substrate 100 is used for higher current applications.
  • the metal base substrate 100 as described above can be manufactured, for example, as follows. That is, the metal base substrate 100 of the present embodiment is obtained by first producing a carrier material with a resin layer, laminating the carrier material with a resin layer on the metal substrate 101, and curing the obtained laminate by heating and pressing. It is done.
  • a resin layer is formed on a carrier material to obtain a carrier material with a resin layer.
  • the carrier material is, for example, a resin film such as polyethylene terephthalate (PET); a metal foil such as a copper foil.
  • the thickness of the carrier material is, for example, 10 to 500 ⁇ m.
  • the carrier material with a resin layer is laminated on the metal substrate 101 so that the resin layer side surface of the carrier material with the resin layer is in contact with the surface of the metal substrate 101. Thereafter, the resin layer is brought into a B stage state by pressurization and heat curing using a press or the like.
  • the carrier material is removed from the resin layer in the B-stage state, and the metal layer 103 is formed on the surface of the exposed resin layer.
  • this carrier material can be used as the metal layer 103 as it is. That is, in this case, a copper foil having a thickness of 170 ⁇ m or more and 230 ⁇ m or less is used as the carrier material, and a resin-coated metal foil that once falls within the above numerical range as the thickness of the copper foil is obtained.
  • the target laminated body is obtained by laminating the metal foil with resin on the metal substrate 101.
  • another layer such as an adhesive layer may be interposed between the resin layer and the metal substrate 101 or between the resin layer and the metal layer 103.
  • the metal base substrate 100 is obtained by post-curing the laminate.
  • the metal layer 103 can be made into the copper foil extruded from the roll. By doing in this way, improvement in production efficiency can be aimed at.
  • the obtained metal base substrate 100 can be processed by etching the metal layer 103 into a predetermined pattern, and a metal base circuit substrate can be obtained. Further, a solder resist 10 (see FIG. 2) may be formed on the outermost layer, and the connection electrode portion may be exposed so that electronic parts can be mounted by exposure and development.
  • the electronic device 11 can be obtained by providing electronic components on the metal base circuit board of the present embodiment.
  • the electronic device 11 is a semiconductor device, such as a power semiconductor device, LED lighting, or an inverter device.
  • the inverter device electrically generates AC power from DC power (has a reverse conversion function).
  • a power semiconductor device is characterized by higher withstand voltage, higher current, higher speed and higher frequency than ordinary semiconductor elements, and is generally called a power device. , Power MOSFET, insulated gate bipolar transistor (IGBT), thyristor, gate turn-off thyristor (GTO), triac and the like.
  • Electronic components are semiconductor elements such as insulated gate bipolar transistors, diodes, and IC chips, and various heating elements such as resistors and capacitors.
  • the metal base substrate 100 functions as a heat spreader.
  • the IC chip 2 is mounted on the metal layer 103a of the metal base circuit board via the adhesive layer 3.
  • the IC chip 2 is electrically connected to the metal layer 103b through the bonding wire 7. Further, the IC chip 2, the bonding wire 7, and the metal layers 103 a and 103 b are sealed with a sealing material 6.
  • the chip capacitor 8 and the chip resistor 9 are mounted on the metal layer 103.
  • Conventionally known chip capacitors 8 and chip resistors 9 can be used.
  • the metal substrate 101 of the electronic device 11 is connected to the heat radiating fins 5 through the heat conductive grease 4. That is, the heat generated by the IC chip 2 is conducted to the heat radiating fins 5 through the adhesive layer 3, the metal layer 103 a, the insulating resin layer 102, the metal substrate 101, and the heat conductive grease 4 to remove heat. Can do.
  • a mass% varnish-like epoxy resin composition A was obtained.
  • the circularity of alumina was measured using a flow type particle image analyzer “FPIA-3000” manufactured by Sysmex.
  • a measurement sample was prepared by adding an appropriate amount of a surfactant to 50 to 100 ml of distilled water, adding 10 to 20 mg of alumina particles thereto, and then dispersing the mixture with an ultrasonic disperser for 1 minute.
  • the flow type particle image analyzer “FPIA-3000” analyzes the circumference of one particle projection image and the circumference of a circle corresponding to the area of the particle projection image, and obtains the circularity by the following equation: The average value per 20,000 is automatically calculated.
  • Epoxy Resin Composition E 3.0 parts by mass of bisphenol A type epoxy resin (Mitsubishi Chemical Corporation, # 828, epoxy equivalents 184 to 194), 3.0 parts by mass of bisphenol A type epoxy resin (Mitsubishi Chemical Corporation, # 1004, epoxy equivalents 875 to 975) Parts, bisphenol A type epoxy resin (Mitsubishi Chemical Corporation, # 1009, epoxy equivalent 2400-3300) 3.9 parts by mass, dicyandiamide (Degussa) 0.2 parts by mass, ⁇ -glycidoxypropyltrimethoxysilane ( Shin-Etsu Silicone Co., Ltd., KBM-403) 1.3 parts by mass, spherical alumina (average particle size 22 ⁇ m, circularity: 0.91, Nippon Steel & Sumikin Materials Co., Ltd., AX-25) 67.4 parts by mass, polyhedral alumina (Average particle diameter 4 ⁇ m, circularity: 0.75, Nippon Light Metal Co.
  • Viscosity characteristics Using a rheometer MCR301 manufactured by Anton Paar Japan, the temperature was increased from 60 ° C to 160 ° C at a rate of temperature increase of 3 ° C / min and a frequency of 1 Hz. From the obtained viscosity profile, the minimum melt viscosity and the temperature at which the minimum melt viscosity was reached were determined.
  • Example 1 [Production of metal base substrate] A copper foil having a thickness of 210 ⁇ m (JTC-210, manufactured by JX Nippon Mining & Metals) was used as the metal foil, and a varnish-like epoxy resin composition A was applied to the roughened surface of the copper foil with a comma coater. Heat-dried at 3 ° C. for 3 minutes and 150 ° C. for 3 minutes to obtain a resin-coated copper foil having a resin thickness of 80 ⁇ m. The resin-coated copper foil and a 1 mm thick aluminum plate (Nippon Light Metal Co., Ltd., A5052P) are bonded together, and pressed with a vacuum press at a press pressure of 100 kg / cm 2 at 80 ° C. for 30 minutes and 180 ° C. for 60 minutes. A metal base substrate (the thickness of the insulating resin layer 102: 80 ⁇ m) was obtained.
  • JTC-210 manufactured by JX Nippon Mining & Metals
  • Example 2 A metal base substrate was obtained in the same manner as in Example 1 except that the epoxy resin composition A was changed to the epoxy resin composition B.
  • Example 3 A metal base substrate was obtained in the same manner as in Example 1 except that the epoxy resin composition A was changed to the epoxy resin composition C.
  • Example 4 A metal base substrate in the same manner as in Example 1 except that when a copper foil with resin was obtained, a copper foil with a thickness of 175 ⁇ m (GTS-STD, manufactured by Furukawa Electric Co., Ltd.) was used instead of a copper foil with a thickness of 210 ⁇ m. Got.
  • GTS-STD Furukawa Electric Co., Ltd.
  • Example 1 A metal base was used in the same manner as in Example 1 except that a copper foil having a thickness of 210 ⁇ m was not used and a copper plate having a thickness of 500 ⁇ m (manufactured by JX Nippon Mining & Metals, Tough Pitch C110) was used when obtaining a copper foil with resin A substrate was obtained.
  • Example 2 A metal base substrate was obtained in the same manner as in Example 1 except that the epoxy resin composition A was changed to the epoxy resin composition D.
  • Circuit processability A dry film type etching resist is laminated on the metal layer surface of a metal base substrate 450 mm ⁇ 350 mm, exposed and developed, and then a predetermined metal layer by a subtractive method using a ferric chloride-based copper etchant. Was processed to prepare a predetermined circuit.
  • Tg glass transition temperature
  • the crack rate of the solder portion refers to the crack progress rate of the solder portion of the component joint portion. The ratio is 100% when the crack progresses and the connection with the substrate is completely disconnected.
  • the metal base substrates obtained in Examples 1 to 4 were sufficiently excellent in circuit workability and excellent in heat cycle performance. Therefore, it is expected that the metal base substrate having a desired copper foil thickness can be used for a long time.
  • the metal base substrates obtained in Examples 1 to 4 are excellent in insulation during bending. This not only indicates that it can be used as a bent metal base substrate, but also shows moderate flexibility as an insulating resin layer and supports high adhesion to the metal layer. .
  • the metal base substrate obtained in Comparative Example 1 was inferior in circuit processability as compared with the metal base substrates obtained in Examples 1 to 4. Therefore, it is suggested that the practicality as a metal base substrate is lacking.
  • the metal base substrates obtained in Comparative Examples 2 and 3 were inferior in heat cycle property and insulation during bending as compared with the metal base substrates obtained in Examples 1 to 4. This is presumably because the epoxy resin composition used for the insulating resin layer does not contain a phenoxy resin. For this reason, these metal base substrates also have problems when they are used for a long period of high current.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Laminated Bodies (AREA)

Abstract

La présente invention concerne un substrat (100) à base de métal comprenant un substrat métallique (101), une couche de résine isolante (102) disposée au-dessus dudit substrat métallique (101), et une couche de métal (103) disposée au-dessus de ladite couche de résine isolante (102), la couche de résine isolante (102) comprenant une composition de résine époxy, ladite composition de résine époxy contenant une résine phénoxy, et la couche métallique (103) étant une feuille de cuivre présentant une épaisseur comprise entre 170 et 230 µm, inclus.
PCT/JP2015/058430 2014-04-21 2015-03-20 Substrat à base de métal, procédé de fabrication d'un substrat à base de métal, carte de circuits imprimés à base de métal, et dispositif électronique WO2015163054A1 (fr)

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JP2014087489A JP2015207666A (ja) 2014-04-21 2014-04-21 金属ベース基板、金属ベース基板の製造方法、金属ベース回路基板および電子装置
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JP6901019B1 (ja) 2020-03-25 2021-07-14 三菱マテリアル株式会社 絶縁回路基板の製造方法
CN115380633A (zh) 2020-03-30 2022-11-22 三菱综合材料株式会社 接合体及绝缘电路基板
JP2021190586A (ja) 2020-06-01 2021-12-13 三菱マテリアル株式会社 絶縁樹脂回路基板
JP6897847B1 (ja) 2020-06-02 2021-07-07 三菱マテリアル株式会社 絶縁樹脂回路基板の製造方法
JP2022083632A (ja) 2020-11-25 2022-06-06 三菱マテリアル株式会社 ヒートシンク一体型絶縁回路基板、および、ヒートシンク一体型絶縁回路基板の製造方法
WO2022202912A1 (fr) 2021-03-26 2022-09-29 三菱マテリアル株式会社 Matériau en feuille métallique, corps stratifié, carte de circuit isolée, et procédé de fabrication de matériau en feuille métallique

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JPH09326536A (ja) * 1996-06-05 1997-12-16 Fuji Electric Co Ltd 金属基板及びその製造方法
JP2005353974A (ja) * 2004-06-14 2005-12-22 Hitachi Chem Co Ltd 金属ベース回路基板
JP2008098662A (ja) * 2007-12-05 2008-04-24 Dowa Holdings Co Ltd 金属−セラミックス接合回路基板の製造方法
JP2009049062A (ja) * 2007-08-14 2009-03-05 Denki Kagaku Kogyo Kk 金属ベース回路用基板の製造方法及び金属ベース回路用基板
JP2011040447A (ja) * 2009-08-07 2011-02-24 Denki Kagaku Kogyo Kk 回路基板及びその製造方法
WO2012090360A1 (fr) * 2010-12-28 2012-07-05 住友ベークライト株式会社 Carte de circuit imprimé à base métallique, et son procédé de production
JP2012153770A (ja) * 2011-01-25 2012-08-16 Sumitomo Bakelite Co Ltd 樹脂組成物、樹脂シート、金属ベース回路基板、インバータ装置、及びパワー半導体装置
JP2013093540A (ja) * 2011-03-23 2013-05-16 Dainippon Printing Co Ltd 放熱基板およびそれを用いた素子

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JPH0794864A (ja) * 1993-09-22 1995-04-07 Mitsubishi Plastics Ind Ltd 金属ベースプリント配線板の製造方法
JPH09326536A (ja) * 1996-06-05 1997-12-16 Fuji Electric Co Ltd 金属基板及びその製造方法
JP2005353974A (ja) * 2004-06-14 2005-12-22 Hitachi Chem Co Ltd 金属ベース回路基板
JP2009049062A (ja) * 2007-08-14 2009-03-05 Denki Kagaku Kogyo Kk 金属ベース回路用基板の製造方法及び金属ベース回路用基板
JP2008098662A (ja) * 2007-12-05 2008-04-24 Dowa Holdings Co Ltd 金属−セラミックス接合回路基板の製造方法
JP2011040447A (ja) * 2009-08-07 2011-02-24 Denki Kagaku Kogyo Kk 回路基板及びその製造方法
WO2012090360A1 (fr) * 2010-12-28 2012-07-05 住友ベークライト株式会社 Carte de circuit imprimé à base métallique, et son procédé de production
JP2012153770A (ja) * 2011-01-25 2012-08-16 Sumitomo Bakelite Co Ltd 樹脂組成物、樹脂シート、金属ベース回路基板、インバータ装置、及びパワー半導体装置
JP2013093540A (ja) * 2011-03-23 2013-05-16 Dainippon Printing Co Ltd 放熱基板およびそれを用いた素子

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