WO2015137233A1 - 研磨パッド及びその製造方法 - Google Patents
研磨パッド及びその製造方法 Download PDFInfo
- Publication number
- WO2015137233A1 WO2015137233A1 PCT/JP2015/056517 JP2015056517W WO2015137233A1 WO 2015137233 A1 WO2015137233 A1 WO 2015137233A1 JP 2015056517 W JP2015056517 W JP 2015056517W WO 2015137233 A1 WO2015137233 A1 WO 2015137233A1
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- WO
- WIPO (PCT)
- Prior art keywords
- group
- polishing
- isocyanate
- polishing pad
- polyurethane resin
- Prior art date
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Images
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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Definitions
- the present invention stabilizes flattening processing of optical materials such as lenses and reflecting mirrors, silicon wafers, glass substrates for hard disks, aluminum substrates, and materials that require high surface flatness such as general metal polishing processing,
- the present invention also relates to a polishing pad that can be performed with high polishing efficiency.
- the polishing pad of the present invention is particularly suitable for a step of planarizing a silicon wafer and a device having an oxide layer, a metal layer, etc. formed thereon, before further laminating and forming these oxide layers and metal layers. Used for.
- a typical material that requires a high degree of surface flatness is a single crystal silicon disk called a silicon wafer for manufacturing a semiconductor integrated circuit (IC, LSI).
- Silicon wafers have a highly accurate surface in each process of stacking and forming oxide layers and metal layers in order to form reliable semiconductor junctions of various thin films used for circuit formation in IC, LSI, and other manufacturing processes. It is required to finish flat.
- a polishing pad is generally fixed to a rotatable support disk called a platen, and a workpiece such as a semiconductor wafer is fixed to a polishing head.
- a polishing operation is performed by generating a relative speed between the platen and the polishing head by both movements, and continuously supplying a polishing slurry containing abrasive grains onto the polishing pad.
- the polishing characteristics of the polishing pad are required to be excellent in flatness (planarity) and in-plane uniformity of the object to be polished, and to have a high polishing rate.
- the flatness and in-plane uniformity of the object to be polished can be improved to some extent by increasing the elastic modulus of the polishing layer.
- the polishing rate can be improved by making the polishing layer a foam to increase the holding amount of the slurry, or making the polishing layer hydrophilic to increase the holding ability of the slurry.
- Patent Document 1 in order to improve water wettability of a polishing pad, (A) a crosslinked elastomer and (B) a carboxyl group, an amino group, a hydroxyl group, an epoxy group, a sulfonic acid group, and a phosphoric acid group. Characterized in that it contains a substance having at least one functional group selected from the group and a water-soluble substance, and (A) the crosslinked elastomer is a polymer obtained by crosslinking 1,2-polybutadiene.
- a polishing pad composition has been proposed.
- Patent Document 2 is a polishing pad made of a polyurethane composition containing a urethane resin in which a compound having a hydrophilic group is copolymerized and containing a hydrophilic agent in order to make the slurry easily compatible with the polishing pad.
- the hydrophilic agent is 2,4,7,9-tetramethyl-5-decyne-4,7-diol-dipolyoxyethylene ether and 2,4,7,9-tetramethyl-5-decyne-
- a polishing pad which is at least one selected from the group consisting of 4,7-diol and the compound having the hydrophilic group is an ethylene oxide monomer.
- Patent Document 3 in order to obtain a polishing pad having good flatness, in-plane uniformity, polishing rate, little change in polishing rate, and excellent life characteristics, it is one of the raw material components of polyurethane resin foam.
- a hydrophilic isocyanate-terminated prepolymer comprising a hydrophilic high molecular weight polyol component having an ethylene oxide unit (—CH 2 CH 2 O—) of 25% by weight or more and a number average molecular weight of 500 or more and an isocyanate component as raw material components. It has been proposed to use polymer (B).
- Patent Document 4 in order to improve the hydrophilicity of the polishing layer, a resin constituting the polishing layer can be dissolved in an organic solvent that can be dissolved, and a partially acylated polysaccharide component hardly soluble or insoluble in water is used. A contained polishing layer has been proposed.
- the polishing layer is made hydrophilic, the polishing rate increases, but there is a problem that the flatness of the object to be polished is deteriorated.
- Japanese Patent No. 3826702 Japanese Patent No. 3851135 Japanese Patent No. 4189963 Japanese Patent No. 5189440
- An object of the present invention is to provide a polishing pad having a high polishing rate and excellent flattening characteristics and a method for producing the same.
- the polyurethane resin as a material for forming the polyurethane resin foam is represented by the following general formula (1): a urethane group or a urea group of an isocyanate-terminated prepolymer;
- the present invention relates to a polishing pad wherein an alkoxysilyl group is introduced into a side chain by a reaction with an isocyanate group of an alkoxysilyl group-containing isocyanate.
- X is OR 1 or OH, R 1 is each independently an alkyl group having 1 to 4 carbon atoms, and R 2 is an alkylene group having 1 to 6 carbon atoms.
- the present invention is characterized in that an alkoxysilyl group is introduced into the side chain of the polyurethane resin.
- the alkoxysilyl group present on the surface of the polishing layer is hydrolyzed by water in the slurry during polishing, and a silanol group is generated on the surface of the polishing layer. Since this silanol group is hydrophilic, the hydrophilicity of the polishing layer surface is improved. As a result, the holding ability of the slurry can be increased, and the polishing rate can be increased.
- the alkoxysilyl group is introduced into the side chain of the polyurethane resin, the polyurethane resin hardly swells with the slurry. Further, the alkoxysilyl group present in the polishing layer is difficult to be hydrolyzed because it is difficult to contact the water in the slurry. Therefore, only the polishing layer surface can be hydrophilized, and a decrease in hardness of the entire polishing layer can be suppressed. As a result, the planarization characteristics of the polishing pad are unlikely to deteriorate.
- the alkoxysilyl group-containing isocyanate is preferably 3-isocyanatopropyltriethoxysilane.
- the addition amount of the alkoxysilyl group-containing isocyanate is preferably 1 to 10 parts by weight with respect to 100 parts by weight of the isocyanate-terminated prepolymer. Since the alkoxysilyl group is introduced into the side chain of the polyurethane resin, hydrophilicity is exhibited by the introduction of a small amount of the alkoxysilyl group. When the addition amount of the alkoxysilyl group-containing isocyanate is less than 1 part by weight, the surface of the polishing layer is hardly hydrophilized, and when it exceeds 10 parts by weight, it tends to be difficult to produce a polishing layer having excellent polishing characteristics.
- the present invention also relates to a method for producing a polishing pad comprising a step of mixing a first component containing an isocyanate-terminated prepolymer and a second component containing a chain extender and curing to produce a polyurethane resin foam.
- a silicone-based surfactant is added to the first component containing the isocyanate-terminated prepolymer so as to be 0.05 to 10% by weight based on the total weight of the first component and the second component, and the first component is added.
- a second component containing a chain extender is mixed in the bubble dispersion and cured.
- a step of producing a polyurethane resin foam The said 2nd component is related with the manufacturing method of the polishing pad characterized by containing the alkoxy silyl group containing isocyanate represented by following General formula (1).
- X is OR 1 or OH, R 1 is each independently an alkyl group having 1 to 4 carbon atoms, and R 2 is an alkylene group having 1 to 6 carbon atoms.
- a resin can be obtained.
- the alkoxysilyl group-containing isocyanate is preferably 3-isocyanatopropyltriethoxysilane.
- the addition amount of the alkoxysilyl group-containing isocyanate is preferably 1 to 10 parts by weight with respect to 100 parts by weight of the isocyanate-terminated prepolymer.
- the present invention also relates to a method for manufacturing a semiconductor device including a step of polishing a surface of a semiconductor wafer using the polishing pad.
- the polishing pad of the present invention has a high polishing rate and excellent planarization characteristics.
- the polishing pad of the present invention makes the polishing layer surface hydrophilic by the slurry during the polishing operation, so that the aggregation of abrasive grains in the slurry is difficult to occur, and it is effective that scratches are generated on the object to be polished. Can be suppressed.
- the polishing pad of the present invention may be only a polishing layer made of a polyurethane resin foam, or may be a laminate of a polishing layer and another layer (such as a cushion layer).
- the polyurethane resin which is a material for forming the polyurethane resin foam, is produced by reacting the urethane group or urea group of the isocyanate-terminated prepolymer with the isocyanate group of the alkoxysilyl group-containing isocyanate represented by the following general formula (1).
- An alkoxysilyl group is introduced.
- X is OR 1 or OH, R 1 is each independently an alkyl group having 1 to 4 carbon atoms, and R 2 is an alkylene group having 1 to 6 carbon atoms.
- the polyurethane resin is preferably a reaction cured product of a polyurethane raw material composition containing an isocyanate-terminated prepolymer, an alkoxysilyl group-containing isocyanate represented by the general formula (1), and a chain extender.
- the isocyanate-terminated prepolymer is obtained by reacting a prepolymer raw material composition containing an isocyanate component, a polyol component (high molecular weight polyol, low molecular weight polyol) and the like.
- the isocyanate component a known compound in the field of polyurethane can be used without particular limitation.
- the isocyanate component 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 2,2′-diphenylmethane diisocyanate, 2,4′-diphenylmethane diisocyanate, 4,4′-diphenylmethane diisocyanate, 1,5-naphthalene diisocyanate, aromatic diisocyanates such as p-phenylene diisocyanate, m-phenylene diisocyanate, p-xylylene diisocyanate, m-xylylene diisocyanate; ethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, 1,6-hexamethylene diisocyanate, etc.
- Aliphatic diisocyanate 1,4-cyclohexane diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, isophorone diisocyanate Isocyanate, cycloaliphatic diisocyanates such as norbornane diisocyanate. These may be used alone or in combination of two or more.
- the isocyanate component a trifunctional or higher polyfunctional polyisocyanate compound can be used in addition to the diisocyanate compound.
- the polyfunctional isocyanate compound a series of diisocyanate adduct compounds are commercially available as Desmodur-N (manufactured by Bayer) and trade name Duranate (manufactured by Asahi Kasei Kogyo).
- Examples of the high molecular weight polyol include those usually used in the technical field of polyurethane. Examples include polyether polyols typified by polytetramethylene ether glycol, polyethylene glycol, etc., polyester polyols typified by polybutylene adipate, polycaprolactone polyols, reactants of polyester glycols such as polycaprolactone and alkylene carbonate, etc. Polyester polycarbonate polyol obtained by reacting ethylene carbonate with polyhydric alcohol and then reacting the obtained reaction mixture with organic dicarboxylic acid, polycarbonate polyol obtained by transesterification of polyhydroxyl compound and aryl carbonate Etc. These may be used alone or in combination of two or more.
- the weight average molecular weight of the high molecular weight polyol is not particularly limited, but is preferably 500 to 3000 from the viewpoint of the elastic properties of the resulting polyurethane resin.
- the weight average molecular weight is less than 500, the polyurethane resin obtained by using the polyurethane resin does not have sufficient elastic properties and tends to be a brittle polymer, the polishing pad made of this polyurethane resin becomes too hard, and the surface of the object to be polished is May cause scratches. Moreover, since it becomes easy to wear, it is not preferable from the viewpoint of the life of the polishing pad.
- the weight average molecular weight exceeds 3000, a polishing pad made of a polyurethane resin obtained by using this becomes soft and it becomes difficult to obtain a sufficiently satisfactory planarity.
- low molecular weight polyamines such as ethylenediamine, tolylenediamine, diphenylmethanediamine, and diethylenetriamine
- alcohol amines such as monoethanolamine, 2- (2-aminoethylamino) ethanol, and monopropanolamine can be used in combination.
- These low molecular weight polyols and low molecular weight polyamines may be used alone or in combination of two or more.
- Isocyanate-terminated prepolymer with an isocyanate component and a polyol component, the equivalent ratio of isocyanate groups (NCO) and the active hydrogen (H *) (NCO / H *) is usually from 1.2 to 8, preferably 1.5 to It is produced by heating reaction in the range of 3.
- the isocyanate-terminated prepolymer has a urethane group in the molecule and may further have a urea group.
- X is preferably OR 1 .
- R 1 is preferably a methyl group or an ethyl group.
- alkoxysilyl group-containing isocyanate represented by the general formula (1) 3-isocyanatopropyltriethoxysilane is preferably used.
- the alkoxysilyl group-containing isocyanate is preferably added in an amount of 1 to 10 parts by weight, more preferably 1 to 5 parts by weight, based on 100 parts by weight of the isocyanate-terminated prepolymer.
- a chain extender is used for curing the isocyanate-terminated prepolymer.
- the chain extender is an organic compound having at least two active hydrogen groups, and examples of the active hydrogen group include a hydroxyl group, a primary or secondary amino group, and a thiol group (SH).
- the polyurethane resin foam can be produced by applying a known urethanization technique such as a melting method or a solution method, but is preferably produced by a melting method in consideration of cost, working environment, and the like.
- the number of isocyanate groups of the prepolymer relative to the number of active hydrogen groups (hydroxyl group, amino group) of the chain extender is an allophanate structure by efficiently reacting the urethane group or urea group of the prepolymer with the isocyanate group of the alkoxysilyl group-containing isocyanate. Or in order to form a burette structure, it is preferably 0.95 to 1.00.
- Examples of the method for producing a polyurethane resin foam include a method of adding hollow beads, a mechanical foaming method (including a mechanical floss method), and a chemical foaming method.
- a mechanical foaming method using a silicone surfactant which is a copolymer of polyalkylsiloxane and polyether is preferable.
- suitable silicone surfactants include SH-192 and L-5340 (manufactured by Toray Dow Corning Silicone), B8443, B8465 (manufactured by Goldschmidt), and the like.
- the silicone-based surfactant is preferably added to the polyurethane raw material composition in an amount of 0.05 to 10% by weight, more preferably 0.1 to 5% by weight.
- stabilizers such as antioxidants, lubricants, pigments, fillers, antistatic agents, and other additives may be added to the polyurethane raw material composition.
- the polyurethane resin foam may be a closed cell type or an open cell type, but it prevents the slurry from entering the polishing layer and prevents hydrolysis of the alkoxysilyl groups present in the polishing layer. In order to do so, it is preferable that it is a closed-cell type.
- the manufacturing method of this polyurethane resin foam has the following processes. 1) Foaming step for producing a cell dispersion of isocyanate-terminated prepolymer A silicone-based surfactant is added to the isocyanate-terminated prepolymer (first component), and the mixture is stirred in the presence of a non-reactive gas to remove the non-reactive gas. Disperse as bubbles to obtain a bubble dispersion. When the prepolymer is solid at normal temperature, it is preheated to an appropriate temperature and melted before use.
- non-reactive gas used to form the bubbles non-flammable gases are preferable, and specific examples include nitrogen, oxygen, carbon dioxide, rare gases such as helium and argon, and mixed gases thereof.
- nitrogen, oxygen, carbon dioxide, rare gases such as helium and argon, and mixed gases thereof are preferable, and specific examples include nitrogen, oxygen, carbon dioxide, rare gases such as helium and argon, and mixed gases thereof.
- the use of air that has been dried to remove moisture is most preferred in terms of cost.
- a stirrer for dispersing the non-reactive gas in the form of bubbles in the first component containing the silicone-based surfactant a known stirrer can be used without particular limitation.
- a homogenizer, a dissolver, biaxial Examples include a planetary mixer (planetary mixer).
- the shape of the stirring blade of the stirring device is not particularly limited, but it is preferable to use a whipper type stirring blade because fine bubbles can be obtained.
- the stirring for preparing the cell dispersion in the foaming step and the stirring for adding and mixing the alkoxysilyl group-containing isocyanate and the chain extender in the mixing step use different stirring devices.
- the stirring in the mixing step may not be stirring that forms bubbles, and it is preferable to use a stirring device that does not involve large bubbles.
- a planetary mixer is suitable. There is no problem even if the same stirring device is used as the stirring device for the foaming step and the mixing step, and it is also preferable to adjust the stirring conditions such as adjusting the rotation speed of the stirring blade as necessary. .
- heating and post-curing the foam that has reacted until the foaming reaction liquid is poured into the mold and no longer flows has the effect of improving the physical properties of the foam.
- the foam reaction solution may be poured into the mold and immediately put into a heating oven for post cure, and heat is not immediately transferred to the reaction components under such conditions, so the bubble size does not increase.
- the curing reaction is preferably performed at normal pressure because the bubble shape is stable.
- a catalyst that promotes a known polyurethane reaction such as a tertiary amine may be used.
- the type and addition amount of the catalyst are selected in consideration of the flow time for pouring into a mold having a predetermined shape after the mixing step.
- Polyurethane resin foam can be manufactured by batch feeding each component into a container and stirring, or by continuously supplying each component and non-reactive gas to the stirring device and stirring, It may be a continuous production method in which a dispersion is sent out to produce a molded product.
- a prepolymer that is a raw material of the polyurethane resin foam is put into a reaction vessel, and then an alkoxysilyl group-containing isocyanate and a chain extender are added, stirred, and then poured into a casting mold of a predetermined size to produce a block.
- a thin sheet may be formed by slicing the block using a saddle-like or band saw-like slicer, or in the above-described casting step.
- the average cell diameter of the polyurethane resin foam is preferably 30 to 200 ⁇ m. When deviating from this range, the planarity (flatness) of the polished object after polishing tends to decrease.
- the hardness of the polyurethane resin foam is preferably 40 to 70 degrees as measured by an Asker D hardness meter.
- Asker D hardness is less than 40 degrees, the planarity of the object to be polished is lowered.
- it exceeds 70 degrees the planarity is good, but the uniformity (uniformity) of the object to be polished is lowered. There is a tendency.
- the specific gravity of the polyurethane resin foam is preferably 0.5 to 1.3.
- the specific gravity is less than 0.5, the surface strength of the polishing layer decreases, and the planarity of the object to be polished tends to decrease.
- the ratio is larger than 1.3, the number of bubbles on the surface of the polishing layer is reduced and planarity is good, but the polishing rate tends to decrease.
- the polishing surface of the polishing pad (polishing layer) of the present invention that comes into contact with the object to be polished has a surface shape that holds and renews the slurry.
- the polishing layer made of foam has many openings on the polishing surface and has the function of holding and renewing the slurry.
- it is also a subject of polishing in order to more efficiently retain the slurry and renew the slurry, it is also a subject of polishing.
- the polishing surface has an uneven structure.
- the concavo-convex structure is not particularly limited as long as it is a shape that holds and renews the slurry.
- an XY lattice groove for example, an XY lattice groove, a concentric circular groove, a through hole, a non-penetrating hole, a polygonal column, a cylinder, a spiral groove, Examples include eccentric circular grooves, radial grooves, and combinations of these grooves.
- these uneven structures are generally regular, but in order to make the slurry retention and renewability desirable, the groove pitch, groove width, groove depth, etc. should be changed for each range. Is also possible.
- the method for producing the concavo-convex structure is not particularly limited.
- a method of machine cutting using a jig such as a tool of a predetermined size, pouring a resin into a mold having a predetermined surface shape, and curing.
- a method of producing a resin by pressing a method of producing using photolithography, a method of producing using a printing technique, a carbon dioxide laser, etc.
- Examples include a manufacturing method using laser light.
- the polishing pad of the present invention may be a laminate of the polishing layer and a cushion sheet.
- the cushion sheet (cushion layer) supplements the characteristics of the polishing layer.
- the cushion sheet is necessary for achieving both planarity and uniformity in a trade-off relationship in CMP.
- Planarity refers to the flatness of a pattern portion when a polishing object having minute irregularities generated during pattern formation is polished, and uniformity refers to the uniformity of the entire polishing object.
- the planarity is improved by the characteristics of the polishing layer, and the uniformity is improved by the characteristics of the cushion sheet.
- the cushion sheet examples include a fiber nonwoven fabric such as a polyester nonwoven fabric, a nylon nonwoven fabric, and an acrylic nonwoven fabric, a resin-impregnated nonwoven fabric such as a polyester nonwoven fabric impregnated with polyurethane, a polymer resin foam such as polyurethane foam and polyethylene foam, a butadiene rubber, Examples thereof include rubber resins such as isoprene rubber and photosensitive resins.
- a fiber nonwoven fabric such as a polyester nonwoven fabric, a nylon nonwoven fabric, and an acrylic nonwoven fabric
- a resin-impregnated nonwoven fabric such as a polyester nonwoven fabric impregnated with polyurethane
- a polymer resin foam such as polyurethane foam and polyethylene foam
- butadiene rubber examples thereof include rubber resins such as isoprene rubber and photosensitive resins.
- Examples of means for attaching the polishing layer and the cushion sheet include a method of sandwiching and pressing the polishing layer and the cushion sheet with a double-sided tape.
- the double-sided tape has a general structure in which adhesive layers are provided on both sides of a base material such as a nonwoven fabric or a film. In consideration of preventing the penetration of the slurry into the cushion sheet, it is preferable to use a film for the substrate.
- the composition of the adhesive layer include rubber adhesives and acrylic adhesives. Considering the content of metal ions, an acrylic adhesive is preferable because the metal ion content is low.
- the composition of each adhesive layer of the double-sided tape can be made different so that the adhesive force of each layer can be optimized.
- the polishing pad of the present invention may be provided with a double-sided tape on the surface to be bonded to the platen.
- a double-sided tape a tape having a general configuration in which an adhesive layer is provided on both surfaces of a base material can be used as described above.
- a base material a nonwoven fabric, a film, etc. are mentioned, for example.
- a film for the substrate it is preferable to use a film for the substrate.
- the composition of the adhesive layer include rubber adhesives and acrylic adhesives. Considering the content of metal ions, an acrylic adhesive is preferable because the metal ion content is low.
- the semiconductor device is manufactured through a process of polishing the surface of the semiconductor wafer using the polishing pad.
- a semiconductor wafer is generally a laminate of a wiring metal and an oxide film on a silicon wafer.
- the method and apparatus for polishing the semiconductor wafer are not particularly limited.
- a polishing surface plate 2 that supports a polishing pad (polishing layer) 1 and a support table (polishing head) that supports the semiconductor wafer 4. 5 and a polishing apparatus equipped with a backing material for uniformly pressing the wafer and a supply mechanism of the abrasive 3.
- the polishing pad 1 is attached to the polishing surface plate 2 by attaching it with a double-sided tape, for example.
- the polishing surface plate 2 and the support base 5 are disposed so that the polishing pad 1 and the semiconductor wafer 4 supported on each of the polishing surface plate 2 and the support table 5 face each other, and are provided with rotating shafts 6 and 7 respectively. Further, a pressurizing mechanism for pressing the semiconductor wafer 4 against the polishing pad 1 is provided on the support base 5 side. In polishing, the semiconductor wafer 4 is pressed against the polishing pad 1 while rotating the polishing surface plate 2 and the support base 5, and polishing is performed while supplying slurry.
- the flow rate of the slurry, the polishing load, the polishing platen rotation speed, and the wafer rotation speed are not particularly limited and are appropriately adjusted.
- the protruding portion of the surface of the semiconductor wafer 4 is removed and polished flat. Thereafter, a semiconductor device is manufactured by dicing, bonding, packaging, or the like. The semiconductor device is used for an arithmetic processing device, a memory, and the like.
- polishing characteristics were evaluated using the prepared polishing pad.
- the polishing rate was calculated from the polishing amount obtained by polishing a thermal oxide film of 1 ⁇ m formed on an 8-inch silicon wafer for 60 seconds.
- An optical interference type film thickness measuring device manufactured by Nanometrics, device name: Nanospec was used for measuring the thickness of the oxide film.
- silica slurry SS12 manufactured by Cabot Corporation
- the polishing load was 4.5 psi
- the polishing platen rotating speed was 93 rpm
- the wafer rotating speed was 90 rpm.
- the flattening characteristics were evaluated by the amount of scraping. After depositing a thermal oxide film of 0.5 ⁇ m on an 8-inch silicon wafer and performing predetermined patterning, an oxide film of 1 ⁇ m was deposited by p-TEOS to produce a patterned wafer having an initial step of 0.5 ⁇ m. This wafer was polished under the above conditions, and after polishing, each step was measured to calculate the amount of scraping.
- the amount of scraping is 270 ⁇ m when the step of the upper part of the lines of the two types of patterns is 2000 mm or less in a pattern in which 270 ⁇ m wide lines are arranged in a 30 ⁇ m space and a pattern in which 30 ⁇ m wide lines are arranged in a 270 ⁇ m space. This is the amount of space shaving. When the amount of scraping of the space of 270 ⁇ m is small, the amount of shaving of the portion that is not desired to be shaved is small, indicating that the flatness is high.
- Example 1 In a reaction vessel, 100 parts by weight of a polyether-based prepolymer (manufactured by Uniroyal, Adiprene L-325) and 3 parts by weight of a silicone-based surfactant (manufactured by Goldschmidt, B8465) are added and mixed at 70 ° C. And degassed under reduced pressure. Then, it stirred vigorously for about 4 minutes so that a bubble might be taken in in a reaction system with the rotation speed of 900 rpm using the stirring blade.
- a polyether-based prepolymer manufactured by Uniroyal, Adiprene L-325
- silicone-based surfactant manufactured by Goldschmidt, B8465
- 3-IPESi 3-isocyanatopropyltriethoxysilane
- MOCA 4,4′-methylenebis (o-chloroaniline)
- a double-sided tape (manufactured by Sekisui Chemical Co., Ltd., double tack tape) was attached to the surface of the polishing layer opposite to the grooved surface using a laminator. Furthermore, the surface of the cushion sheet (Toray Industries, Inc., polyethylene foam, Torepef, thickness 0.8 mm) subjected to corona treatment was buffed and bonded to the double-sided tape using a laminator. Further, a double-sided tape was attached to the other surface of the cushion sheet using a laminator to prepare a polishing pad.
- the cushion sheet Toray Industries, Inc., polyethylene foam, Torepef, thickness 0.8 mm
- Example 2 A polishing pad was prepared in the same manner as in Example 1 except that the amount of 3-IPESi added was changed from 1 part by weight to 5 parts by weight.
- Example 3 In a reaction vessel, polyethylene glycol (PEG, Daiichi Kogyo Seiyaku Co., Ltd., number average molecular weight 1000) 40 parts by weight, polyethylene glycol (PEG, Daiichi Kogyo Seiyaku Co., Ltd., number average molecular weight 600) 12.8 parts by weight, DEG 6 A weight part was added, and vacuum dehydration was performed for 1 to 2 hours with stirring. Next, nitrogen was introduced into the separable flask, and after nitrogen substitution, TDI-80 (41.2 parts by weight) was added. The reaction system was stirred until the reaction was completed while maintaining the temperature in the reaction system at about 70 ° C. The reaction was terminated when the NCO% became almost constant (NCO%: 9.96).
- hydrophilic prepolymer a hydrophilic isocyanate-terminated prepolymer (hereinafter referred to as a hydrophilic prepolymer).
- a hydrophilic prepolymer 80 parts by weight of a polyether-based prepolymer (manufactured by Uniroyal, Adiprene L-325), 20 parts by weight of a hydrophilic prepolymer, and 3 parts by weight of a silicone-based surfactant (manufactured by Goldschmidt, B8465) Were added, mixed, adjusted to 70 ° C. and degassed under reduced pressure.
- a polyether-based prepolymer manufactured by Uniroyal, Adiprene L-325
- silicone-based surfactant manufactured by Goldschmidt, B8465
- Example 4 A polishing pad was produced in the same manner as in Example 3 except that the amount of 3-IPESi added was changed from 1 part by weight to 5 parts by weight.
- Comparative Examples 1 to 3 A polishing pad was prepared in the same manner as in Example 1 except that the formulation shown in Table 1 was adopted.
- the polishing pads of Examples 1 to 4 had a high polishing rate and excellent flattening characteristics. Moreover, it was possible to effectively suppress the generation of scratches on the wafer. On the other hand, the polishing pads of Comparative Examples 1 to 3 were insufficient in polishing rate and planarization characteristics. Moreover, the polishing pads of Comparative Examples 1 and 2 could not suppress the generation of scratches on the wafer.
- the polishing pad of the present invention provides stable and high leveling of flattening of optical materials such as lenses and reflecting mirrors, silicon wafers, aluminum substrates, and materials requiring high surface flatness such as general metal polishing. Can be done with efficiency.
- the polishing pad of the present invention is particularly suitable for a step of planarizing a silicon wafer and a device having an oxide layer, a metal layer, etc. formed thereon, before further laminating and forming these oxide layers and metal layers. Can be used for
- polishing pad polishing layer
- polishing surface plate Abrasive (slurry)
- polishing object polishing object (semiconductor wafer)
- Support base polishing head 6
- Rotating shaft Rotating shaft
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Abstract
Description
(式中、XはOR1又はOHであり、R1はそれぞれ独立に炭素数1~4のアルキル基であり、R2は炭素数1~6のアルキレン基である。)
前記工程は、イソシアネート末端プレポリマーを含む第1成分にシリコーン系界面活性剤を第1成分及び第2成分の合計重量に対して0.05~10重量%になるように添加し、さらに前記第1成分を非反応性気体と撹拌して前記非反応性気体を気泡として分散させた気泡分散液を調製した後、前記気泡分散液に鎖延長剤を含む第2成分を混合し、硬化してポリウレタン樹脂発泡体を作製する工程であり、
前記第2成分は、下記一般式(1)で表されるアルコキシシリル基含有イソシアネートを含有することを特徴とする研磨パッドの製造方法、に関する。
(式中、XはOR1又はOHであり、R1はそれぞれ独立に炭素数1~4のアルキル基であり、R2は炭素数1~6のアルキレン基である。)
(式中、XはOR1又はOHであり、R1はそれぞれ独立に炭素数1~4のアルキル基であり、R2は炭素数1~6のアルキレン基である。)
1)イソシアネート末端プレポリマーの気泡分散液を作製する発泡工程
イソシアネート末端プレポリマー(第1成分)にシリコーン系界面活性剤を添加し、非反応性気体の存在下で撹拌し、非反応性気体を気泡として分散させて気泡分散液とする。前記プレポリマーが常温で固体の場合には適宜の温度に予熱し、溶融して使用する。
2)アルコキシシリル基含有イソシアネート及び鎖延長剤の混合工程
上記の気泡分散液にアルコキシシリル基含有イソシアネート及び鎖延長剤(第2成分)を添加、混合、撹拌して発泡反応液とする。
3)注型工程
上記の発泡反応液を金型に流し込む。
4)硬化工程
金型に流し込まれた発泡反応液を加熱し、反応硬化させる。
(平均気泡径の測定)
作製したポリウレタン樹脂発泡体を厚み1mm以下になるべく薄くミクロトームカッターで平行に切り出したものを測定用試料とした。試料表面を走査型電子顕微鏡(日立サイエンスシステムズ社製、S-3500N)で100倍にて撮影した。そして、画像解析ソフト(MITANIコーポレーション社製、WIN-ROOF)を用いて、任意範囲の全気泡の円相当径を測定し、その測定値から平均気泡径を算出した。
JIS Z8807-1976に準拠して行った。作製したポリウレタン樹脂発泡体を4cm×8.5cmの短冊状(厚み:任意)に切り出したものを比重測定用試料とし、温度23℃±2℃、湿度50%±5%の環境で16時間静置した。測定には比重計(ザルトリウス社製)を用い、比重を測定した。
JIS K6253-1997に準拠して行った。作製したポリウレタン樹脂発泡体を2cm×2cm(厚み:任意)の大きさに切り出したものを硬度測定用試料とし、温度23℃±2℃、湿度50%±5%の環境で16時間静置した。測定時には、試料を重ね合わせ、厚み6mm以上とした。硬度計(高分子計器社製、アスカーD型硬度計)を用い、硬度を測定した。また、試料を水に48時間浸漬し、その後、試料を取出して表面の水分を軽く拭き取った後、同様の方法で硬度を測定した。
研磨装置としてMAT-ARW-8C1A(MAT(株)製)を用い、作製した研磨パッドを用いて、研磨特性の評価を行った。研磨速度は、8インチのシリコンウエハに熱酸化膜を1μm製膜したものを、60秒研磨してこのときの研磨量より算出した。酸化膜の膜厚測定には、光干渉式膜厚測定装置(ナノメトリクス社製、装置名:Nanospec)を用いた。研磨条件としては、スラリーとして、シリカスラリー(SS12 キャボット社製)を研磨中に流量120ml/min添加した。研磨荷重としては4.5psi、研磨定盤回転数93rpm、ウエハ回転数90rpmとした。
反応容器内に、ポリエーテル系プレポリマー(ユニロイヤル社製、アジプレンL-325)100重量部、及びシリコーン系界面活性剤(ゴールドシュミット社製、B8465)3重量部を加えて混合し、70℃に調整して減圧脱泡した。その後、撹拌翼を用いて、回転数900rpmで反応系内に気泡を取り込むように激しく約4分間撹拌を行った。その後、反応容器内に、3-イソシアネートプロピルトリエトキシシラン(以下、3-IPESiという)1重量部、及び予め120℃に溶融した4,4’-メチレンビス(o-クロロアニリン)(以下、MOCAという)28.9重量部を添加した(NCO Index:1.0)。該混合液を約70秒間撹拌した後、パン型のオープンモールド(注型容器)へ流し込んだ。この混合液の流動性がなくなった時点でオーブン内に入れ、100℃で16時間ポストキュアを行い、ポリウレタン樹脂発泡体ブロックを得た。
約80℃に加熱した前記ポリウレタン樹脂発泡体ブロックをスライサー(アミテック社製、VGW-125)を使用してスライスし、ポリウレタン樹脂発泡体シートを得た。次に、バフ機(アミテック社製)を使用して、厚さ1.27mmになるまで該シートの表面バフ処理をし、厚み精度を整えたシートとした。このバフ処理をしたシートを直径61cmの大きさで打ち抜き、溝加工機(テクノ社製)を用いて表面に溝幅0.25mm、溝ピッチ1.50mm、溝深さ0.40mmの同心円状の溝加工を行い、研磨層を得た。この研磨層の溝加工面と反対側の面にラミ機を使用して、両面テープ(積水化学工業社製、ダブルタックテープ)を貼りつけた。更に、コロナ処理をしたクッションシート(東レ社製、ポリエチレンフォーム、トーレペフ、厚み0.8mm)の表面をバフ処理し、それを前記両面テープにラミ機を使用して貼り合わせた。さらに、クッションシートの他面にラミ機を使用して両面テープを貼り合わせて研磨パッドを作製した。
3-IPESiの添加量を1重量部から5重量部に変更した以外は実施例1と同様の方法で研磨パッドを作製した。
反応容器内に、ポリエチレングリコール(PEG、第一工業製薬社製、数平均分子量1000)40重量部、ポリエチレングリコール(PEG、第一工業製薬社製、数平均分子量600)12.8重量部、DEG6重量部を入れ、撹拌しながら減圧脱水を1~2時間行った。次に、セパラブルフラスコ内に窒素を導入し、窒素置換した後にTDI-80(41.2重量部)を添加した。反応系内の温度を70℃程度に保持しながら反応が終了するまで撹拌した。反応の終了はNCO%がほぼ一定になった時点とした(NCO%:9.96)。その後、減圧脱泡を約2時間行い、親水性イソシアネート末端プレポリマー(以下、親水性プレポリマーという)を得た。
反応容器内に、ポリエーテル系プレポリマー(ユニロイヤル社製、アジプレンL-325)80重量部、親水性プレポリマー20重量部、及びシリコーン系界面活性剤(ゴールドシュミット社製、B8465)3重量部を加えて混合し、70℃に調整して減圧脱泡した。その後、撹拌翼を用いて、回転数900rpmで反応系内に気泡を取り込むように激しく約4分間撹拌を行った。その後、反応容器内に、3-IPESi1重量部、及び予め120℃に溶融したMOCA29.4重量部を添加した(NCO Index:1.0)。該混合液を約70秒間撹拌した後、パン型のオープンモールド(注型容器)へ流し込んだ。この混合液の流動性がなくなった時点でオーブン内に入れ、100℃で16時間ポストキュアを行い、ポリウレタン樹脂発泡体ブロックを得た。その後、実施例1と同様の方法で研磨パッドを作製した。
3-IPESiの添加量を1重量部から5重量部に変更した以外は実施例3と同様の方法で研磨パッドを作製した。
表1に記載の配合を採用した以外は実施例1と同様の方法で研磨パッドを作製した。
2:研磨定盤
3:研磨剤(スラリー)
4:研磨対象物(半導体ウエハ)
5:支持台(ポリシングヘッド)
6、7:回転軸
Claims (7)
- 前記アルコキシシリル基含有イソシアネートが、3-イソシアネートプロピルトリエトキシシランである請求項1記載の研磨パッド。
- 前記アルコキシシリル基含有イソシアネートの添加量は、イソシアネート末端プレポリマー100重量部に対して1~10重量部である請求項1又は2記載の研磨パッド。
- イソシアネート末端プレポリマーを含む第1成分と鎖延長剤を含む第2成分とを混合し、硬化してポリウレタン樹脂発泡体を作製する工程を含む研磨パッドの製造方法において、
前記工程は、イソシアネート末端プレポリマーを含む第1成分にシリコーン系界面活性剤を第1成分及び第2成分の合計重量に対して0.05~10重量%になるように添加し、さらに前記第1成分を非反応性気体と撹拌して前記非反応性気体を気泡として分散させた気泡分散液を調製した後、前記気泡分散液に鎖延長剤を含む第2成分を混合し、硬化してポリウレタン樹脂発泡体を作製する工程であり、
前記第2成分は、下記一般式(1)で表されるアルコキシシリル基含有イソシアネートを含有することを特徴とする研磨パッドの製造方法。
(式中、XはOR1又はOHであり、R1はそれぞれ独立に炭素数1~4のアルキル基であり、R2は炭素数1~6のアルキレン基である。) - 前記アルコキシシリル基含有イソシアネートが、3-イソシアネートプロピルトリエトキシシランである請求項4記載の研磨パッドの製造方法。
- 前記アルコキシシリル基含有イソシアネートの添加量は、イソシアネート末端プレポリマー100重量部に対して1~10重量部である請求項4又は5記載の研磨パッドの製造方法。
- 請求項1~3のいずれかに記載の研磨パッドを用いて半導体ウエハの表面を研磨する工程を含む半導体デバイスの製造方法。
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KR102129665B1 (ko) | 2018-07-26 | 2020-07-02 | 에스케이씨 주식회사 | 연마패드, 이의 제조방법 및 이를 이용한 연마방법 |
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US11628535B2 (en) | 2019-09-26 | 2023-04-18 | Skc Solmics Co., Ltd. | Polishing pad, method for manufacturing polishing pad, and polishing method applying polishing pad |
CN112571303B (zh) * | 2019-09-29 | 2023-03-28 | Skc索密思株式会社 | 抛光垫、该抛光垫的制造方法及使用该抛光垫的抛光方法 |
TWI761921B (zh) | 2019-10-30 | 2022-04-21 | 南韓商Skc索密思股份有限公司 | 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法 |
KR102287923B1 (ko) * | 2019-10-30 | 2021-08-09 | 에스케이씨솔믹스 주식회사 | 연마패드, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법 |
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