Classifications

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  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
  • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
  • H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
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  • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
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  • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
  • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
  • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
  • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
  • H01L21/4814—Conductive parts
  • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
  • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
  • H01L21/4814—Conductive parts
  • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
  • H01L21/486—Via connections through the substrate with or without pins
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  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
  • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
  • H01L23/3157—Partial encapsulation or coating
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  • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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  • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L23/5226—Via connections in a multilevel interconnection structure
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  • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L23/528—Layout of the interconnection structure
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  • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
  • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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  • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
  • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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  • H01L24/93—Batch processes
  • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
  • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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  • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
  • H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/02—Details
  • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/02—Details
  • H05K1/11—Printed elements for providing electric connections to or between printed circuits
  • H05K1/115—Via connections; Lands around holes or via connections
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  • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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  • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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  • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
  • H05K2201/10227—Other objects, e.g. metallic pieces
  • H05K2201/10242—Metallic cylinders

Definitions

• This application relates to integrated circuit packaging, and more particularly to a bottom package having metal post interconnections.
• Organic substrates are commonly used in package-on-package architectures because of their low cost.
• a flip-chip die such as a microprocessor may be coupled to a first surface of an organic substrate for a bottom package through a plurality of solder bumps or copper pillars.
• the bottom package substrate has a footprint large enough such that there is perimeter about the bottom package die on the first surface of the bottom package substrate. That perimeter may then support solder ball interconnections to the top package.
• the resulting package-on-package architecture is quite popular due to its low cost, organic substrates are often not suitable for modern fine-pitch dies because an organic substrate accommodates only a relatively coarse interconnect pitch.
• the interconnect pitch is the separation between the substrate-to-die interconnections such as micro-bumps or copper pillars as well as the bottom-package-to-top-package interconnections such as solder balls.
• the bottom package substrate for modern fine-pitch dies typically comprises a glass or semiconductor interposer.
• a glass or semiconductor interposer supports fine-pitch interconnections. It is thus conventional to mount fine- pitch dies onto an interposer because a glass or silicon interposer enables the necessary fine-pitch interconnections.
• Multiple fine-pitch dies such as a first processor die and a second processor die may be mounted on the same interposer.
• the interposer receives the fine-pitch interconnects such as micro-bumps or copper pillars from each die through a redistribution layer (RDL) that enables each die to communicate with the other die(s) through the RDL.
• RDL redistribution layer
• the resulting interposer package is thus advantageous in that it accommodates the necessary fine-pitch interconnections, it is conventional to interface processors with associated external memories such as a DRAM die using a package-on-package (PoP) construction. But the footprint of the interposer is already somewhat large as it must have the necessary surface area to support the fine-pitch dies.
• PoP package-on-package
• interposer also includes a perimeter around the fine-pitch dies to provide space for conventional PoP solder ball interconnections to an upper memory package substrate
• the interposer footprint becomes excessive.
• the encased solder balls must then be exposed such as through the use of laser drilling of the mold compound.
• the heat from the laser requires a certain keep-out distance between the solder balls and the dies.
• the resulting interposer for the bottom package thus requires a relatively large footprint to support not only the dies and the solder balls but also the keep out distance between the solder balls and the dies.
• the solder balls must be relatively large to couple to the upper package.
• Such a relatively large interconnect size requires a correspondingly large interconnect pitch.
• the interposer footprint thus must be large enough to support both the solder balls with their requisite pitch as well as the associated keep-out area between the solder balls and the die, which decreases density and is expensive.
• the interposer may include a perimeter that supports an interconnect bar such as a printed circuit bar or a silicon or glass interconnect bar.
• the interconnect bar includes a number of plated vias as opposed to solder balls. But the manufacture of the plated vias in the interconnect bar also require a certain distance or keep out area with regard to the interconnect bar outer perimeter.
• the interposer footprint must be relatively large.
• a bottom package is provided with plated metal posts for forming interconnects to a top package.
• the plated metal posts enable a reduced footprint for the bottom package as compared to conventional bottom packages that use solder balls or interconnect bars to form the interconnections to an upper package or additional die.
• the bottom package includes a bottom package substrate supporting one or more dies.
• the bottom package substrate may comprise a glass, silicon, or laminated organic interposer that supports a plurality of dies.
• the bottom package substrate may comprise a glass substrate, a semiconductor substrate, or a laminated organic substrate that supports a single die.
• the bottom package substrate includes a plurality of plated metal posts coupled to die interconnects through a redistribution layer (RDL).
• the die(s) supported by the bottom package substrate couple through the die interconnects to the RDL, from the RDL to the metal posts, and from the metal posts to a top package substrate.
• both the metal posts and the die interconnects are plated onto a seed layer overlaying the RDL.
• the die interconnects and metal posts may be plated onto the seed layer prior to attachment of the die (or dies) to the bottom package substrate.
• the metal posts may thus be deposited without any need for a keep out area in contrast to conventional bar interconnect or solder ball embodiments.
• the resulting bottom package substrates disclosed herein thus have advantageously enhanced density as compared to conventional architectures.
• Figure 1 A is a cross-sectional view of a bottom package including metal posts in accordance with an embodiment of the disclosure.
• Figure IB is a cross-sectional view of the bottom package of Figure 1A as it receives a top package to form a package-on-package (PoP) construction.
• PoP package-on-package
• Figure 2A is a cross-sectional view of an interposer used to form the bottom package of Figure 1 A prior to deposition of die interconnects and the metal posts.
• Figure 2B is a cross-sectional view of the interposer of Figure 2A after deposition of the seed layer.
• Figure 2C is a cross-sectional view of the interposer of Figure 2B after deposition and patterning of a first mask layer for forming the die interconnects.
• Figure 2D is a cross-sectional view of the interposer of Figure 2C after deposition of the die interconnects and removal of the first mask layer.
• Figure 2E is a cross-section view of the interposer of Figure 2D after deposition and patterning of a second mask layer for forming the metal posts.
• Figure 2F is a cross-section view of the interposer of Figure 2E after deposition of the metal posts and removal of the second mask layer.
• Figure 2G is a cross-sectional view of the interposer of Figure 2F after attachment of a pair of dies.
• Figure 2H is a cross-sectional view of the interposer of Figure 2G after deposition of mold compound to encase the dies and after attachment of solder balls.
• Figure 21 is a cross-sectional view of the interposer of Figure 2H after back-side grinding and formation of a board-facing redistribution layer and solder balls.
• Figure 21 is a cross-sectional view of the interposer of Figure 21 after dicing to complete construction of the bottom package.
• Figure 3 is a plan view of the bottom package of Figure 2J showing the arrangement of the metal posts with respect to the dies.
• Figure 4 is a flowchart summarizing a method of manufacture for a bottom package in accordance with an embodiment of the disclosure.
• Figure 5 illustrates some example electronic systems incorporating a bottom package in accordance with an embodiment of the disclosure.
• a bottom package is provided with plated metal posts for forming the interconnects to the top package.
• the plated metal posts enable a reduced footprint for the bottom package as compared to the conventional bottom packages that use solder balls or interconnect bars to form the interconnections to an upper package or additional die.
• the bottom package includes a bottom package substrate supporting one or more dies.
• the bottom package substrate may comprise a glass, silicon, or laminated organic interposer that supports a plurality of dies.
• the bottom package substrate may comprise a glass, semiconductor, or laminated organic substrate that supports a single die.
• interconnect bars which requires the extra process steps of embedding the interconnect bar in the bottom package substrate.
• the interconnect bar manufacture typically requires laser drilling of the vias that are then plated to form the metal posts in the interconnect bar.
• the interconnect bar thus requires a relatively large keep out area around its entire perimeter.
• the plating of the metal posts for the bottom package disclosed herein requires no laser drilling.
• the plated metal posts thus require a reduced keep out area as compared to the use of interconnect bars not only with respect to the die(s) but also with respect to the perimeter of the bottom package substrate. Accordingly, the disclosed bottom package offers increased density and reduced manufacturing costs.
• the plated metal posts electrically couple to die interconnects through a redistribution layer (RDL) in the bottom package.
• the die interconnects comprise metal pillars.
• a conventional interposer may also have a redistribution layer that electrically couples die interconnects such as metal pillars to metal posts in a bar interconnect.
• a conventional bar interconnect is manufactured separately from the bottom package substrate. In this conventional manufacturing process, the substrate forming the bar interconnect is drilled such as through laser or mechanical drilling to form a plurality of vias that are subsequently plated to complete the bar interconnect posts.
• the vias Due to the drilling or machining process to form the vias in the bar interconnect substrate, the vias (and thus the metal posts that will eventually fill the vias) must be spaced a certain keep out distance from the bar interconnect substrate perimeter. As discussed earlier, the resulting keep out distance in bar-interconnect-containing bottom package substrates limits density and thus increases costs.
• the metal posts disclosed herein are not manufactured separately in a bar interconnect. Instead, the disclosed metal posts are manufactured in situ on the bottom package substrate. To enable this in situ formation, a seed layer covers the redistribution layer. A dielectric layer then covers the seed layer. Windows are opened up in the dielectric layer to form die interconnect openings and also metal post openings. Metal may then be plated onto the seed layer portions exposed in the die interconnect openings and the metal post openings to form the die interconnects and the metal posts.
• this seed layer is also denoted herein as a single seed layer.
• the die interconnects and metal posts may be deposited onto the seed layer prior to attachment of the die (or dies) to the bottom package substrate.
• the metal posts may thus be formed without a reduced keep out area both with respect to the edge of the substrate and with respect to the dies(s).
• an interconnect bar is diced from a wafer of such bars and thus requires a larger keep out area.
• the resulting bottom package substrates disclosed herein thus have advantageously enhanced density and lower fabrication cost as compared to conventional architectures.
• Figure 1A illustrates a metal-post- enhanced bottom package 100 including a semiconductor or glass interposer 1 1 .
• interposer 1 15 may comprise a laminated organic interposer.
• interposer 115 may instead comprise a substrate that supports only a single die 105.
• the substrate for bottom package single-die embodiments may comprise glass, semiconductor, or laminated organic polymers.
• Each die 105 electrically couples through a plurality of interconnects such as solder bumps 107 to a corresponding plurality of die interconnects 110 on substrate 115.
• Die interconnects 110 also electrically couple to a die-side redistribution layer that in turn electrically couples to a plurality of metal posts 160.
• the die-side redistribution layer comprises an upper or first die-side RDL 140 and a lower or second die-side RDL 205.
• Alternative embodiments may have just a single metal layer for the die-side redistribution layer or may have more than two metal layers.
• interconnects 1 10 electrically couple to lower die-side RDL 205.
• lower die-side RDL 205 electrically couples to upper die-side RDL 140, which then electrically couples to metal posts 160.
• die interconnects 110 may be deemed to comprise a means for electrically coupling dies 105 to a die-side redistribution layer such as lower die-side RDL 205.
• Die interconnects 1 10 and metal posts 160 may comprise any suitable plated metal such as copper or nickel.
• the various redistribution layers disclosed herein such as upper and lower die-side redistribution layers 140 and 205 may comprise copper, nickel, or other conducting metals.
• Upper and lower die-side redistribution layers 140 and 205 form conductors or interconnects within a dielectric layer 130 to electrically couple die interconnects 1 10 to corresponding ones of metal posts 160.
• a particular die interconnect 1 10 such as a die interconnect 1 10a may need to electrically couple to a particular metal post 160 such as a metal post 160a.
• Upper die-side RDL 140 and lower die-side RDL 205 thus electrically couple together these structures.
• upper and lower die-side RDLs 140 and 205 include conductors (not illustrated) to electrically couple die-to-die signals between dies 105.
• lower die-side RDL 205 electrically couple dies 105 to a plurality of through-substrate vias 185.
• Through-substrate vias 185 extend from lower die-side RDL 205 through a core layer 120 of substrate 115 to a board- facing redistribution layer (RDL) 150 that in turn electrically couples to board-facing solder balls 155.
• the composition of core layer 120 depends upon the substrate used in bottom package 100. For example, in a glass interposer embodiment, core layer 120 would comprise glass. Similarly, in a semiconductor interposer embodiment, core layer 120 would comprise semiconductor.
• Board-facing redistribution layer 150 may be insulated from core layer 120 by a dielectric layer 156. For example, dielectric layer 156 may be laminated onto core layer 120 to also line through-substrate vias 185.
• a board-side solder resist or passivation layer 136 includes openings so that exposed pad portions of board-facing redistribution layer 150 may receive solder balls 155. Solder balls 155 electrically couple to a circuit board (not illustrated) or an underlying package.
• a mold compound 165 partially encases dies 105 and metal posts 160.
• Metal posts 160 may also electrically couple to a top-side redistribution layer 170 on mold compound 165 and dies 105,
• a top-side solder resistor or passivation layer 190 covers top-side redistribution layer 170.
• top-side redistribution layer 170 may be insulated from dies 105 by passivation layer 190, which includes openings to expose pads in top-side redistribution layer 170. These openings may receive interconnects 206 such as solder bumps or copper pillars from a top package 200 as shown in Figure IB. Upper package 200 is shown in Figure IB just prior to it being mounted onto bottom package 100.
• Top-side redistribution layer 170 allows for a fan-out between pillars 160 and interconnects 206 from top package 200.
• interposer core 120 would initially be part of a wafer or panel (not illustrated) that would be processed as a whole.
• the panel or wafer would include a plurality of interposer cores 120 that are processed with die interconnects 1 10 and metal posts 160 prior to dicing interposer cores 120 from the panel or wafer.
• each interposer core 120 may be processed individually after it is diced from a panel or wafer.
• Interposer core 120 may be configured with through-substrate vias 185 in a variety of methods.
• interposer core 120 may be laser drilled and plated to form vias 185.
• a number of blind vias may be for formed using, for example, laser drilling or machining and then plated in interposer core 120 prior to a grinding step that exposes the blind ends of the blind vias and thus forms through- substrate vias 185.
• Figure 2A illustrates a cross-section of an interposer core 120 including a plurality of conductive blind vias 200.
• interposer core 120 is part of a wafer or panel 215 such that a WLP manufacturing technique is being implemented.
• a die-facing surface of interposer core 120 is laser drilled, etched, or mechanically drilled to form a plurality of blind vias that are then plated to form conductive blind vias 200.
• the blind vias Prior to plating, the blind vias may be lined with a dielectric layer (not illustrated) such as dielectric layer 156 shown in Figure 1 A.
• a board-facing surface 202 of interposer core 120 has not yet been ground to expose the ends of conductive e blind vias 200 so as to form through-substrate vias 185 discussed with regard to Figures 1A and IB. Since Figure 2A is illustrating an initial manufacture step, through-substrate vias 185 shown in Figures 1A and IB are not yet formed.
• a dielectric layer 135 is deposited on a die-facing surface 203 of interposer core 120 supports dielectric layer 135. For example, dielectric layer 135 may be laminated onto die-facing surface 203.
• dielectric layer 135 may comprise polymide, Ajinomoto build-up film, benzocyclobutene-based polymer, or other suitable dielectric materials.
• dielectric layer 135 may be spun onto die-facing surface 203 or deposited using chemical vapor deposition techniques.
• Dielectric layer 135 may be deposited in stages to allow for masking steps so a die-side redistribution layer such as upper die-side redistribution layer 140 may be formed within dielectric layer 135.
• a metal such as copper or nickel may be deposited using plating or electroless techniques to form upper die-side RDL140.
• multiple metal layers may be used in the various redistribution layers disclosed herein.
• dielectric layer 135 may include an additional die-side redistribution layer such as lower die-side RDL 205 formed analogously as discussed with regard to upper die-side RDL 140.
• interposer core 120 may comprise a semiconductor such as silicon that has some conductivity. To prevent shorting to such conductive substrates, lower die-side RDL 205 may be insulated from interposer core 120 by dielectric layer 135 as shown in Figure 2B. Alternatively, if interposer core 120 comprises a glass or organic material, lower die-side RDL 205 may contact interposer core 120 as shown in Figure 1A.
• dielectric layer 135 may be processed such as through etching to form openings for the subsequent formation of metal posts 160 and die interconnects 1 10 discussed with regard to Figures 1A and IB.
• dielectric layer 135 may be patterned to include die interconnect openings 201 that expose corresponding portions of lower die-side RDL 205.
• dielectric layer 135 may be patterned to include metal post openings 225 that also expose
• metal seed layer 210 may comprise TiCu, TiW, or copper deposited using, for example, a physical vapor technique. Note that single seed layer 210 lines both die interconnect openings 201 and metal post openings 225.
• a first mask layer 215 such as a wet or dry etch mask layer may then be deposited over seed layer 210 and patterned to re-expose die interconnect openings 201.
• the re-expose may enlarge die interconnect openings 201 as compared to their dimensions in Figure 2 A.
• First mask layer 215 is thus deposited in a thickness that matches a desired height for the die interconnects (not yet formed) that will fill die interconnect openings 201.
• die interconnects 1 10 may then be plated into die interconnect openings 201 as shown in Figure 2D.
• a suitable metal such a copper or nickel may be electroplated to form die interconnects 110.
• First mask layer 215of Figure 2C may then be stripped or removed from panel or wafer 215 at this time.
• Metal posts 160 of Figure 1A and IB have a greater height or length as compared to die interconnects 1 10.
• metal posts 160 are not plated at the time of plating die interconnects 110 since first mask layer 215 has a height to match a desired height for die interconnects 1 10 and not for metal posts 160.
• the formation of metal posts 160 may then begin with a deposition of a second mask layer 220 over seed layer 210 as shown in Figure 2E.
• second mask layer 220 has a greater thickness or height so as to accommodate the greater height of metal posts 160 as compared to die interconnects 1 10.
• Analogous to first mask layer 215, second mask layer 220 is patterned to re- expose and enlarge metal post openings 225.
• Metal posts 160 may then be plated into metal post openings 225 and second mask layer 220 stripped or otherwise removed as shown in Figure 2F.
• the exposed portions of seed layer 210 are also etched away at this time. However, there will remain those portions of seed layer 210 (not illustrated) onto which die interconnects 1 10 and metal posts 160 were plated. The etching of seed layer 210 may produce the same amount of undercut (not illustrated) on those portions remaining under die interconnects 110 and metal posts 160.
• the attachment of dies 105 is illustrated in Figure 2G. Interconnects on dies 105 such as solder bumps 107 or copper pillars electrically couple to corresponding die interconnects 1 10 on panel or wafer 215, An underfill 240 may also be applied at this time to assist in securing dies 105 to panel or wafer 215.
• a mold compound 245 may then be applied to at least partially encapsulate dies 105 as shown in Figure 2H. Mold compound also partially encapsulates metal posts 160. An upper surface for both metal posts and dies 105 may be left exposed after application of mold compound 245.
• a grinding process may be used to expose metal posts 160.
• Through-substrate vias 185 may then exposed on the bottom or board- facing surface of interposer core 120.
• a manufacturer may grind board- facing side 202 of wafer or panel 215 to expose what had been the blind ends of conductive blind vias 200 (shown, for example in Figure 2H) to form through substrate-vias 185.
• a board-facing redistribution layer 150 may then be deposited on board-facing surface 202 along with a solder resist or passivation layer 136 that is patterned for form openings for solder balls 155 as shown in Figure 21.
• bottom package 250 its die-facing surface is shown in plan view in Figure 3.
• Metal posts 160 are arranged on a periphery of bottom package 250 with regard to dies 105. Mold compound 245 fills the spaces between metal posts 160 and dies 105. But such an arrangement need not include the keep-out area between metal posts 160 and dies 105 as in conventional interconnect bar packages.
• the manufacture of an interconnect bar requires a certain keep-out area with regard to its perimeter in that the interconnect bar substrate is typically laser drilled to form vias for the subsequent plating of metal posts. Such drilling cannot be performed too closely to the interconnect bar substrate perimeter.
• metal posts 160 are deposited on the same seed layer 210 on which die interconnects 1 10 are deposited as discussed with regard to, for example, Figure 2F. Density becomes even worse for conventional bottom packages that use solder balls for the interconnects to the top package. Thus, bottom package 250 has advantageously increased density as compared to conventional approaches. A flowchart summarizing the manufacturing process will now be discussed.
• a step 400 comprises exposing a redistribution layer through a plurality of die interconnect openings and a plurality of metal post openings within a dielectric layer on a substrate surface.
• the formation of die interconnect openings 201 shown in Figure 4C as well as the formation of metal post openings 235 shown in Figure 2E are examples of step 400.
• a step 405 comprises forming die interconnects in the die interconnect openings.
• the formation of die interconnects 1 10 shown in Figure 2D provides an example of step 405.
• a step 410 comprises forming metal posts in the metal post openings.
• the formation of metal posts 160 shown in Figure 2F provides an example of step 410.
• Integrated circuit packages including a bottom package with metal posts as disclosed herein may be incorporated into a wide variety of electronic systems.
• a cell phone 500, a laptop 505, and a tablet PC 510 may all include an integrated circuit package incorporating a metal-post-containing bottom package constructed in accordance with the disclosure.
• Other exemplary electronic systems such as a music player, a video player, a communication device, and a personal computer may also be configured with integrated circuit packages constructed in accordance with the disclosure.

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• 2014
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