WO2015081674A1 - 一种柔性显示基板及柔性显示器 - Google Patents
一种柔性显示基板及柔性显示器 Download PDFInfo
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- WO2015081674A1 WO2015081674A1 PCT/CN2014/078805 CN2014078805W WO2015081674A1 WO 2015081674 A1 WO2015081674 A1 WO 2015081674A1 CN 2014078805 W CN2014078805 W CN 2014078805W WO 2015081674 A1 WO2015081674 A1 WO 2015081674A1
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- WIPO (PCT)
- Prior art keywords
- substrate
- flexible
- flexible display
- display
- thin film
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 257
- 239000010409 thin film Substances 0.000 claims abstract description 75
- 239000011368 organic material Substances 0.000 claims description 12
- 239000002346 layers by function Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 238000009459 flexible packaging Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 44
- 239000000463 material Substances 0.000 description 16
- 239000004973 liquid crystal related substance Substances 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 238000005452 bending Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Definitions
- the present invention relates to the field of display technologies, and in particular, to a flexible display substrate and a flexible display.
- Crystal Display the name of the LCD, is essentially a traditional rigid display. Compared with conventional rigid displays, flexible displays have many advantages, such as impact resistance, strong shock resistance, light weight, small size, and more convenient carrying.
- the array substrate constituting the flexible display generally uses, for example, a gate insulating layer, an interlayer insulating layer, a passivation layer, or the like, composed of a SiNx (silicon nitride) or SiOx (silicon oxide) layer, however, due to the SiNx or SiOx layer thereof Poor toughness, 4 ⁇ is easy to cause when the flexible display is distorted
- the SiNx or SiOx layer is broken, thereby destroying the thin film transistor on the array substrate, thereby affecting the display quality.
- Embodiments of the present invention provide a flexible display substrate and a flexible display that can avoid or reduce damage to a thin film transistor when a flexible display substrate is bent.
- a flexible display substrate is provided.
- the flexible display substrate further includes a plurality of protrusion structures
- Each protruding structure is disposed on the first flexible lining a second side of the base substrate opposite to the first side and corresponding to a corresponding thin film transistor in a thickness direction of the first flexible substrate; and in the thickness direction of the first flexible substrate, each of the protrusion structures is The projection on the second side of the first flexible substrate substrate at least partially overlaps the projection of a thin film transistor corresponding to the pupil protrusion structure on the second side of the first flexible substrate.
- the flexible display substrate further includes a second flexible substrate disposed on a second side of the first flexible substrate; and the plurality of protrusion structures are disposed on the first flexible substrate And between the second flexible substrate. Further, the protrusion structure is disposed on the second flexible substrate, and the first flexible substrate and the second flexible substrate provided with the protrusion structure are bonded by OCA optical glue .
- any two adjacent protrusion structures are spaced apart.
- the plurality of protrusion structures correspond to the thin film transistors of the plurality of display elements.
- the number of thin film transistors of the flexible display substrate is greater than the number of the protruding structures.
- the plurality of display elements are sequentially counted; and the plurality of protrusion structures correspond to a thin film transistor of an odd-numbered or even-counted display element of the plurality of display elements.
- the protruding structure is a rectangular parallelepiped, a square, a cylinder or a polygonal body other than a rectangular parallelepiped and a cube.
- the protrusion structure has a thickness of 0.2-2 ⁇ m.
- the protrusion structure is made of aluminum, 4 mesh, polyimide, silicon nitride or silicon oxide.
- a projected area of the protruding structure on the second side of the first flexible substrate substrate is larger than a projected area of the thin film transistor on the second side of the first flexible substrate.
- the display element further includes a pixel electrode electrically connected to a drain of the thin film transistor.
- the display element further includes an anode electrically connected to the drain of the thin film transistor, and a cathode and an organic material functional layer between the anode and the cathode.
- a flexible display including the flexible display substrate described above.
- the flexible display substrate includes a pixel electrode electrically connected to a drain of the thin film transistor
- the flexible display further includes a color filter substrate.
- the flexible display substrate includes an anode electrically connected to a drain of the thin film transistor, and a cathode and an organic material functional layer
- the flexible display further includes a flexible package substrate; wherein the flexible The package substrate and the flexible display substrate are bonded by an adhesive.
- a protrusion mechanism is provided, such that when the flexible display substrate is bent, the protrusion structure can carry stress generated during bending, thereby preventing or reducing bending of the flexible display substrate The stress generated in the process destroys the thin film transistor.
- FIG. 1 is a schematic structural view of a flexible display substrate according to an embodiment of the present invention
- FIG. 2 is a schematic structural view of a flexible display substrate according to an embodiment of the present invention
- FIG. 3 is a flexible embodiment of the present invention.
- FIG. 4 is a schematic structural view of a flexible display substrate according to an embodiment of the present invention
- FIG. 5 is a schematic structural view of a flexible display substrate according to an embodiment of the present invention
- FIG. FIG. 7 is a schematic structural diagram of a flexible display substrate according to an embodiment of the present invention
- FIG. 8 is a schematic structural diagram of a flexible display substrate according to an embodiment of the present invention
- FIG. 9 is a schematic structural diagram 1 of a flexible display according to an embodiment of the present invention
- FIG. 10 is a schematic structural diagram 2 of a flexible display according to an embodiment of the present invention.
- the flexible display substrate 01 includes a first flexible substrate 10 and is disposed on the first flexible substrate 10. a plurality of display elements 1 1 , the display element 1 1 includes a thin film transistor 20; further the flexible display substrate 01 further includes a second portion disposed on a side of the first flexible substrate substrate 10 away from the thin film transistor 20 A flexible substrate 30, and a plurality of protrusion structures 40 disposed between the first flexible substrate 10 and the second flexible substrate 30.
- the projection of any of the protrusion structures 40 on the second flexible substrate substrate 30 overlaps with the projection of the thin film transistor 20 in the display element 1 1 on the second flexible substrate substrate 30.
- the second flexible substrate 30 may not be provided.
- the degree of overlap of the above two projections can also vary.
- the present invention provides a flexible display substrate 01 including a first flexible substrate 10 and a plurality of display elements disposed on a first side (upper side in the drawing) of the first flexible substrate 10
- Each of the display elements 1 1 includes a thin film transistor 20, wherein: the flexible display substrate 01 further includes a plurality of protruding structures 40, each of which is disposed on the first side of the first flexible substrate Opposite second side (lower side in the drawing) and corresponding to a corresponding thin film transistor 20 in the thickness direction of the first flexible substrate; and in the thickness direction of the first flexible substrate 01, each protrusion
- the projection of the structure 40 on the second side of the first flexible substrate substrate at least partially overlaps the projection of a thin film transistor 20 corresponding to the protrusion structure 40 on the second side of the first flexible substrate.
- the thin film transistor 20 includes a gate 201, a gate insulating layer 202, an active layer 203, a source 204, a drain 205, and the like; in this case, the flexible display substrate 01 further includes an electrical connection with the gate 201 Grid line, a gate line lead, a data line and a data line lead electrically connected to the source 204.
- the display element 11 further includes a connection with the drain 205.
- the display element 1 1 may further include a common electrode 60; in this case, for an In-Plane Switch (IPS) array substrate, as shown in FIG. 3 and FIG. 4,
- IPS In-Plane Switch
- the pixel electrode 50 and the common electrode 60 are disposed in the same layer at intervals, and both are nano-shaped electrodes; for an advanced-super Dimensional Switching (ADS) array substrate, as shown in FIG. 5 and FIG. 6
- ADS advanced-super Dimensional Switching
- the pixel electrode 50 and the common electrode 60 are disposed in different layers, wherein the upper electrode is a strip electrode and the lower electrode is a plate electrode.
- the display element 11 When the flexible display substrate is an array substrate of an organic light-emitting diode (OLED), as shown in FIG. 7 and FIG. 8, the display element 11 further includes the drain An anode 70, a cathode 80, and an organic material functional layer 90 between the anode 70 and the cathode 80 are connected.
- OLED organic light-emitting diode
- the flexible display substrate is a single-sided light-emitting type; when the materials of the anode 70 and the cathode 80 are both transparent materials, the flexible display substrate is double-sided light-emitting type.
- the single-sided light-emitting type flexible display substrate can be classified into an upper light-emitting type and a lower light-emitting type depending on the materials of the anode 70 and the cathode 80.
- the cathode 80 is disposed away from the first flexible substrate 10 and the material of the anode 70 is a transparent conductive material
- the material of the cathode 80 is an opaque conductive material, since light is emitted from the anode 70 and then through the side of the first flexible substrate 10, it may be referred to as a lower emission type
- the material of the anode 70 is an opaque conductive material
- the material of the cathode 80 is a transparent conductive material, since light is emitted from the cathode 80 and through the encapsulation layer disposed opposite to the first flexible substrate 10, it may be referred to as an upper emission type.
- the encapsulation layer may be a flexible package substrate or a film, which is not limited herein.
- the cathode 80 is disposed away from the first flexible substrate substrate 10, or when the anode 70 is away from the The first flexible substrate 10 is disposed, the cathode 80 is disposed adjacent to the first flexible substrate 10, and the materials of the anode 70 and the cathode 80 are transparent conductive materials such as ITO (Indium Tin Oxides, Indium tin oxide), since light is emitted from the anode 70 on the side of the first flexible substrate 10 side, and on the other hand from the cathode 80, and then through the package disposed opposite to the first flexible substrate 10 The layer is emitted, so it can be called a double-sided illumination type.
- ITO Indium Tin Oxides, Indium tin oxide
- the display element 1 1 may further include some necessary pattern layers such as a protective layer, a passivation layer, an interlayer insulating layer, a pixel isolation layer 110 for isolating the pixel unit, etc., or to improve the display effect or some Some pattern layers with increased defects.
- some necessary pattern layers such as a protective layer, a passivation layer, an interlayer insulating layer, a pixel isolation layer 110 for isolating the pixel unit, etc., or to improve the display effect or some Some pattern layers with increased defects.
- the display element can be understood as being disposed on the first flexible substrate 10 corresponding to a smallest display unit of the flexible display substrate 01.
- An indispensable structure composed of layers of patterns, and the flexible display substrate 01 includes a plurality of the display elements.
- the protrusion structure 40 may be formed by a patterning process, an inkjet printing process, screen printing, or the like.
- the protrusion structure 40 is disposed on a side of the first flexible substrate 10 away from the thin film transistor 20 (ie, a second side or a lower side in the drawing) and includes two meanings: one is that the protrusion structure 40 is directly disposed to A second side of the first flexible substrate 10, and a protrusion structure 40 are disposed on a side of the second flexible substrate 30 adjacent to the first flexible substrate 10.
- the shape and the number of the protruding structures 40 are not limited so as to protect the thin film transistor 20 from being damaged when the flexible display substrate 01 is bent.
- the number of the protrusion structures 40 for any of the protrusion structures 40, it necessarily corresponds to the position of the thin film transistor 20 in one of the display elements 1 1 .
- the positional correspondence described above is that, in the case where the second flexible substrate 30 is disposed, the projection of any of the protruding structures 40 on the second flexible substrate 30 and one of the display elements 1 1
- the projection of the thin film transistor 20 on the second flexible substrate 30 overlaps; or, whether or not the second flexible substrate 30 is disposed, each of the protrusion structures and the thin film transistor corresponding to the protrusion structure are first
- the projections on the second side of the flexible substrate substrate overlap.
- the total coverage area is relatively small, or the relatively large area is relatively small, in particular, when the flexible display substrate 01 is bent, the thin film transistor 20 is protected from being damaged, and the protruding structure 40 is not It will affect the display effect of the flexible display substrate 01.
- the thin film transistor 20 may be of a top gate type or a bottom gate type, which is not limited herein.
- the top gate and the bottom gate are opposite to the positions of the gate 201 and the gate insulating layer 202, that is, opposite to the first flexible substrate 10, when the gate 201 is adjacent to the first flexible substrate
- the substrate 10, when the gate insulating layer 202 is away from the first flexible substrate 10, is a bottom gate type thin film transistor; when the gate 201 is away from the first flexible substrate 10, the gate insulating layer 202 is close to the first
- the flexible substrate 10 is flexible, it is a top gate type thin film transistor.
- the projection of any of the protruding structures 40 on the second flexible substrate 30 and the projection of the thin film transistor 20 in the display element 11 on the second flexible substrate 30 overlapping.
- the protruding structure 40 can carry the stress generated during the bending process, thereby preventing or reducing the stress generated by the flexible display substrate 01 during the bending process from damaging the thin film transistor. 20.
- any two adjacent protrusion structures 40 are spaced apart.
- two adjacent protruding structures are connected to each other in a group, and the groups are spaced apart from each other.
- the number of thin film transistors is larger than the number of protrusion structures, for example, the plurality of display elements are sequentially counted; and the plurality of protrusion structures and odd or even counts of the plurality of display elements
- the thin film transistor of the display element - corresponding.
- the protrusion structure 40 may be spaced apart from the plurality of display elements 11, for example: in the gate line direction, the protrusion structure 40 is disposed at an odd number of displays.
- the thin film transistor 20 of the element 1 1 or the thin film transistor 20 of the display element 11 is spaced apart from each other, and is set according to the actual situation, which is not limited herein.
- the plurality of protrusion structures 40 may correspond to the thin film transistors of the plurality of display elements, that is, one thin film transistor corresponds to one protrusion structure. As shown in FIGS. 2, 4, 6, and 8, the protrusion structure 40 corresponds to the display element 1 1 , that is, a protrusion structure 40 is disposed under the thin film transistor 20 of any one of the display elements 11 . .
- any one of the protruding structures 40 is in the second soft
- the projected area on the substrate substrate 30 is larger than the projected area of the thin film transistor 20 in the corresponding display element 11 on the second flexible substrate 30.
- the protruding structure 40 is disposed on the second flexible substrate 30, the first flexible substrate 10 and the protrusion provided with the protrusion 40
- the second flexible substrate 30 is bonded by the OCA optical glue 100. That is, the second flexible substrate 30 provided with the protruding structure 40 is bonded by the OCA optical adhesive 100 and the first flexible substrate 10 provided with the display element 1 1 .
- the shape of the protrusion structure 40 may alternatively be a rectangular parallelepiped, a square, a cylinder or a polygonal body other than a rectangular parallelepiped or a cube.
- the material of the protruding structure 40 may be a metal material, such as aluminum (Al), molybdenum (Mo), or the like, or may be a resin material, such as polyimide, or an inorganic material, for example, Silicon nitride (SiNx), silicon oxide (SiOx), and the like.
- the molding may be performed by a patterning process, that is, by depositing, for example, a metal thin film on the second flexible substrate 30, and forming a photoresist on the metal thin film, and then performing exposure, etching, peeling, and the like through a common mask.
- the protrusion structure 40 is formed.
- the thickness of the protrusion structure 40 is preferably 0.2-2 ⁇ m.
- the formation of the protruding structure 40 is not limited to being formed by a patterning process, and may be implemented by other means, and details are not described herein again.
- the embodiment of the invention further provides a flexible display comprising the flexible display substrate 01 described above.
- the flexible display may be: an electronic paper, a liquid crystal television, a liquid crystal display, an OLED television, an OLED display, a digital photo frame, a mobile phone, a tablet, etc., having any display function or component.
- the flexible display substrate 01 is an array substrate of a liquid crystal display
- the flexible display substrate 01 includes an electrical connection with the drain 205 of the thin film transistor 20 .
- the flexible display further includes a color filter substrate 03, and a liquid crystal layer 04.
- the color film substrate 03 includes a third flexible substrate 300, a color layer disposed on the third flexible substrate 300, and the color layer includes a red photoresist 310, a green photoresist 320, and blue light. Resistor 330; of course, may also include a white photoresist, which is not limited here.
- the color filter substrate 02 further includes the common electrode 60.
- the flexible display substrate 01 is an array substrate of an OLED, that is, the flexible display substrate 01 includes an anode electrically connected to the drain 205 of the thin film transistor 20 70.
- the flexible display further includes a flexible package substrate 02; wherein the flexible package substrate 02 and the flexible display substrate 01 are bonded by an adhesive 05.
- the OLED will include
- the flexible package substrate 02 disposed opposite to the first flexible substrate substrate 10 isolates oxygen and moisture.
- a thin film for packaging which is not limited herein.
- a flexible liquid crystal display comprising a flexible display substrate 01, a color filter substrate 03, and a liquid crystal layer 04 disposed between the substrates.
- the flexible display substrate 01 includes a plurality of pixel units divided by horizontally intersecting gate lines and data lines disposed on the first flexible substrate substrate 10, each pixel unit including one display element 1 1 (in FIG. 9
- the display element 1 1 includes a thin film transistor 20, a pixel electrode 50, and a common electrode 60; wherein the thin film transistor 20 includes a gate 201, a gate insulating layer 202, an active layer 203, a source 204, and The drain electrode 205, the pixel electrode 50 and the drain electrode 205 are electrically connected; the pixel electrode 50 is a plate electrode, and the common electrode 60 is located above the pixel electrode 50 and is a strip electrode.
- the color film substrate 03 includes a third flexible substrate substrate 300, a color layer disposed on the third flexible substrate substrate 300, and the color layer includes a red photoresist 310, a green photoresist 320, and a blue photoresist 330. .
- the red resistor 310, the green photoresist 320, and the blue photoresist 330 are cyclically arranged in the direction of the gate line and correspond to the pixel unit of the flexible display substrate 01.
- the flexible display substrate 01 further includes a second flexible substrate substrate 30 and a plurality of protruding structures 40 disposed on the second flexible substrate substrate 30;
- the first flexible substrate substrate 10 is away from One side of the thin film transistor 20 and one side of the second flexible substrate 30 on which the protrusion structure 40 is disposed are bonded by the OCA optical paste 100;
- a protruding structure 40 is disposed under the thin film transistor 20 of any one of the display elements 11 , and a projected area of the protruding structure 40 on the second flexible substrate 30 is larger than that of the thin film transistor 20 The projected area on the second flexible substrate 30.
- the protrusion structure 40 is made of polyimide, has a rectangular parallelepiped shape, and has a thickness of 1 ⁇ m.
- a flexible liquid crystal display provided by an embodiment of the present invention, when the flexible liquid crystal display is bent, due to the presence of the protruding structure 40, it can carry stress generated during bending, thereby preventing the flexible liquid crystal display from being bent. Stress is generated during the process to destroy the thin film transistor 20.
- a flexible organic electroluminescent diode display including a flexible display substrate 01 and a flexible package substrate 02, and the flexible package substrate 02 and the flexible display substrate 01 are provided.
- the adhesive 05 is bonded.
- the flexible display substrate 01 includes a plurality of pixel units, each of which includes a display element 11 (not labeled in FIG. 9), the display element 1 1 including: a thin film transistor 20, an anode 70, a cathode 80, and An organic material functional layer 90 between the anode 70 and the cathode 80.
- Two adjacent pixel units are isolated by a pixel isolation layer 110 disposed above the thin film transistor 20.
- the thin film transistor 20 includes a gate 201, a gate insulating layer 202, an active layer 203, a source 204, and a drain 205.
- the anode 70 and the drain 205 are electrically connected;
- the cathode 80 is located at the Above the anode 70, the anode 70 material is a transparent material, and the cathode 80 material is an opaque material;
- the organic material functional layer 90 includes at least an electron transport layer, a light emitting layer and a hole transport layer;
- the efficiency of hole injection into the light-emitting layer, the organic material functional layer 90 may further include an electron injection layer disposed between the cathode 80 and the electron transport layer, and the anode 70 and the hole transport A hole injection layer between the layers.
- the flexible display substrate 01 further includes a second flexible substrate substrate 30 and a plurality of protruding structures 40 disposed on the second flexible substrate substrate 30; the first flexible substrate substrate 10 is away from One side of the thin film transistor 20 and one side of the second flexible substrate 30 provided with the protrusion structure 40 are bonded by the OCA optical paste 100; wherein, under the thin film transistor 20 of any one of the display elements 11 Each is provided with a protruding structure 40, The projected area of the protruding structure 40 on the second flexible substrate substrate 30 is larger than the projected area of the thin film transistor 20 on the second flexible substrate 30.
- the material of the protrusion structure 40 is polyimide, the shape is a rectangular parallelepiped, and the thickness is 1 ⁇ m.
- a flexible organic electroluminescent diode display provided by an embodiment of the present invention, when the flexible organic electroluminescent diode display is bent, due to the presence of the protruding structure 40, it can carry the stress generated during the bending process, thereby The flexible organic electroluminescent diode display is prevented from generating stress during the bending process to destroy the thin film transistor 20.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/418,235 US10644032B2 (en) | 2013-12-06 | 2014-05-29 | Flexible display substrate and flexible display |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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CN201310658988.6A CN103681694A (zh) | 2013-12-06 | 2013-12-06 | 一种柔性显示基板及柔性显示器 |
CN201310658988.6 | 2013-12-06 |
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WO2015081674A1 true WO2015081674A1 (zh) | 2015-06-11 |
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PCT/CN2014/078805 WO2015081674A1 (zh) | 2013-12-06 | 2014-05-29 | 一种柔性显示基板及柔性显示器 |
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US (1) | US10644032B2 (zh) |
CN (1) | CN103681694A (zh) |
WO (1) | WO2015081674A1 (zh) |
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CN103681694A (zh) | 2013-12-06 | 2014-03-26 | 京东方科技集团股份有限公司 | 一种柔性显示基板及柔性显示器 |
US10388904B2 (en) * | 2014-11-07 | 2019-08-20 | Sharp Kabushiki Kaisha | Organic el display device and method for producing organic el display device |
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