CN107611090B - Oled显示面板及其制备方法 - Google Patents
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Abstract
本发明提供一种OLED显示面板制备方法,所述方法包括:步骤S10,提供TFT阵列基板,所述TFT基板表面具有凸起部;步骤S20,在所述TFT阵列基板表面涂布感光材料,将感光材料固化制备第一平坦化层,所述第一平坦化层的膜厚超过所述凸起部;以及,步骤S30,在所述第一平坦化层表面制备第二平坦化层;有益效果为:本发明提供的OLED显示面板制备方法,将平坦化层分两道工序制备,可得到较高平坦度的平坦化层。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种OLED显示面板及其制备方法。
背景技术
有机发光二极管(OLED)具有自发光性、应答速度快、广视角等特点,应用前景广阔。
对于蒸镀AMOLED(Active-matrix organic light emitting diode,主动式有机发光二极体)来讲,蒸镀材料到达像素区膜厚均匀性好,对像素区基底平坦度的要求相对较松,而IJP(Ink Jet Printing,喷墨印刷)工艺的AMOLED的ink(油墨)打印到像素区是流动的,ink铺展性的主要影响因素之一是像素区基底的平坦度,要求整个像素区最大段差越小越好,超过该规格时ink的铺展性不均,则烘干后膜厚不均,最终影响发光效果,因此IJP-AMOLED的平坦化层PLN的平坦能力有了更苛刻的要求。
PLN是有机感光材料,目前的应对方案是PLN膜层的加厚,段差越大需要越厚的PLN,所以存在的问题及可能的风险:1、PLN的一次平坦化能力是有限的,即当基底段差达到一定程度,PLN已经增加至很厚(3um以上)平坦度依然不能达到要求;2、PLN都有开孔设计,开孔过深对后续的薄膜沉积有影响,比如爬坡断线等不良。
综上所述,现有技术的IJP-AMOLED在制程中,平坦化层难以达到制备需求的平整度,整个像素区最大段差较大,ink的铺展性不均匀,烘干后的发光层膜厚不均匀,进而影响OLED显示面板的显示效果。
发明内容
本发明提供一种OLED显示面板的制备方法,能够提高平坦化层表面的平整度,以解决现有技术中因平坦化层难以达到制备需求的平整度而使得发光层膜厚不均匀,影响OLED显示面板的显示效果的技术问题。
为解决上述问题,本发明提供的技术方案如下:
本发明提供一种OLED显示面板制备方法,所述方法包括:
步骤S10,提供TFT阵列基板,所述TFT阵列基板表面具有凸起部;
步骤S20,在所述TFT阵列基板表面制备第一平坦化层,所述第一平坦化层的膜厚超过所述凸起部;以及,
步骤S30,在所述第一平坦化层表面制备第二平坦化层。
根据本发明一优选实施例,所述第二平坦化层的膜厚大于或等于所述第一平坦化层的膜厚。
根据本发明一优选实施例:
所述步骤S20还包括:
步骤S201,在所述第一平坦化层的对应区域制备第一通孔;
所述步骤S30还包括:
步骤S301,在所述第二平坦化层的对应区域制备第二通孔,所述第二通孔位于相对应的所述第一通孔的上方。
根据本发明一优选实施例,所述第二通孔的孔径大于所述第一通孔的孔径,所述第一通孔与所述第二通孔形成台阶通孔。
根据本发明一优选实施例,所述方法还包括:
步骤S40,在所述第二平坦化层表面制备阳极金属层,并将所述阳极金属层经图案化处理形成阳极金属图案阵列;
步骤S50,在所述第二平坦化层表面制备像素定义堤部阵列,一像素定义堤部位于相邻两阳极金属图案之间;
步骤S60,在所述像素定义堤部形成的像素区域内制备发光材料。
根据本发明一优选实施例,所述方法还包括:
步骤S40,在所述第二平坦化层表面制备第三平坦化层;
所述步骤S40还包括:
步骤S401,在所述第三平坦化层的对应区域制备第三通孔,所述第三通孔位于相对应的所述第二通孔的上方。
根据本发明一优选实施例,所述第三通孔的孔径大于所述第二通孔的孔径,所述第三通孔、第二通孔以及第三通孔形成台阶通孔。
根据本发明一优选实施例,所述第一平坦化层采用聚酰亚胺材料制备,所述第二平坦化层采用聚甲基丙烯酸甲酯材料制备。
根据本发明一优选实施例,所述第一平坦化层和所述第二平坦化层均采用聚酰亚胺材料制备。
依据本发明的上述目的,提出一种由上述OLED显示面板制备方法制得的OLED显示面板,所述OLED显示面板包括:
TFT阵列基板,所述TFT阵列基板表面具有凸起部;
第一平坦化层,制备于所述TFT阵列基板表面,所述第一平坦化层的膜厚超过所述凸起部;以及,
第二平坦化层,制备于所述第一平坦化层表面。
本发明的有益效果为:相较于现有的OLED显示面板制备方法,本发明提供的OLED显示面板制备方法,将平坦化层分两道工序制备,可得到较高平坦度的平坦化层;解决了现有技术的IJP-AMOLED在制程中,平坦化层难以达到制备需求的平整度,整个像素区最大段差较大,ink的铺展性不均匀,烘干后的发光层膜厚不均匀,进而影响OLED显示面板的显示效果。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明OLED显示面板制备方法流程示意图;
图2为根据本发明制备方法制得的OLED显示面板结构示意图。
具体实施方式
以下各实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是用以相同标号表示。
本发明针对现有技术的IJP-AMOLED在制程中,平坦化层难以达到制备需求的平整度,整个像素区最大段差较大,喷涂材料(ink)的铺展性不均匀,烘干后的发光层膜厚不均匀,进而影响OLED显示面板的显示效果,本实施例能够解决该缺陷。
如图1所示,本发明提供的OLED显示面板的制备方法,所述方法包括如下步骤:
步骤S10,提供TFT阵列基板,所述TFT阵列基板表面具有凸起部。
在所述步骤S10中,具体包括:步骤S101,提供一基板;步骤S102,在所述基板表面制备TFT器件。在制备所述TFT器件时,同时制备扫描线和数据线,所述扫描线对应连接所述TFT器件的栅极,所述数据线对应连接所述TFT器件的源极。所述扫描线与所述数据线的设置,使得所述扫描线与所述数据线对应的区域高于其他区域,形成凸起部。
步骤S20,在所述TFT阵列基板表面制备第一平坦化层,所述第一平坦化层的膜厚超过所述凸起部。具体的,在所述TFT阵列基板表面涂布厚度为所述凸起部高度两倍的感光材料,将感光材料固化形成所述第一平坦化层。
固化后的所述第一平坦化层,对应位于所述凸起部表面的所述第一平坦化层的厚度,小于所述第一平坦化层其他区域的膜层厚度。
步骤S30,在所述第一平坦化层表面制备第二平坦化层。具体的,在所述第一平坦化层表面涂布具有一定厚度的感光材料,将所述感光材料固化形成所述第二平坦化层;对应位于所述凸起部上方的所述第二平坦化层,与位于其他区域的所述第二平坦化层处于同一水平高度。
在制备完所述第一平坦化层后,根据所述TFT阵列基板的段差值制备所述第二平坦化层;例如,当最大段差值较小时,将所述第二平坦化层膜厚设置为与所述第一平坦化层的膜厚相等;又如,当最大段差值较小时,将所述第二平坦化层膜厚设置为大于所述第一平坦化层的膜厚。
例如,当制备完所述第二平坦化层后,所述TFT阵列基板的最大段差值仍然大于一定范围值时,可在所述第二平坦化层表面制备第三平坦化层,以将最大段差值缩小至范围值内。
本发明提供的OLED显示面板的制备方法,还包括制备OLED发光器件的步骤:
步骤S40,在所述第二平坦化层表面制备阳极金属层,并将所述阳极金属层经图案化处理形成阳极金属图案阵列。
步骤S50,在所述第二平坦化层表面制备像素定义堤部阵列,一像素定义堤部位于相邻两阳极金属图案之间;所述像素定义堤部采用疏水性材料。
步骤S60,在所述像素定义堤部形成的像素区域内制备发光材料;所述发光材料采用油墨印刷的方式制备。
步骤S70,在所述发光材料上制备阴极金属层。
所述步骤S20还包括:步骤S201,在所述第一平坦化层的对应区域制备第一通孔;例如,所述第一通孔对应于所述像素区域,用以实现所述OLED发光器件与所述TFT器件的连接;例如,所述第一通孔还设置于OLED显示面板的非显示区域,用以实现TFT器件与驱动芯片的连接。
所述步骤S30还包括:步骤S301,在所述第二平坦化层的对应区域制备第二通孔,所述第二通孔位于相对应的所述第一通孔的上方。
其中,所述第二通孔的孔径大于所述第一通孔的孔径,使得所述第一通孔与所述第二通孔形成台阶通孔,从而缓冲电极成膜的爬坡,避免金属膜层爬坡断线。
如果所述第二平坦化层表面制备有第三平坦化层,则在所述第三平坦化层的对应区域制备第三通孔,所述第三通孔位于相对应的所述第二通孔的上方;其中,所述第三通孔的孔径大于所述第二通孔的孔径,所述第三通孔、第二通孔以及第三通孔形成台阶通孔;用以缓冲电极成膜的爬坡,避免金属膜层爬坡断线。
本发明实施例中,所述第一平坦化层采用聚酰亚胺材料制备,所述第二平坦化层采用聚甲基丙烯酸甲酯材料制备;聚酰亚胺材料形成的膜层与聚甲基丙烯酸甲酯材料形成膜层,具有较佳的绝缘特性,而且两膜层间结合紧密,避免脱膜风险。
又如,所述第一平坦化层和所述第二平坦化层均采用聚酰亚胺材料制备;聚酰亚胺(Polyimide,简称PI)材料具有较佳的柔韧性,将所述第一平坦化层和所述第二平坦化层均采用具有柔韧性的PI材料,适用于可弯折OLED显示装置。
如图2所示,本发明还提供了一种采用上述OLED显示面板的制备方法制备的OLED显示面板。
所述OLED显示面板包括:TFT阵列基板201,所述TFT阵列基板表面具有凸起部202;第一平坦化层203,制备于所述TFT阵列基板201表面,所述第一平坦化层203的膜厚超过所述凸起部202;以及,第二平坦化层204,制备于所述第一平坦化层203表面。
所述第一平坦化层203表面制备有第一通孔205;所述第二平坦化层204表面制备有第二通孔206,所述第二通孔206位于所述第一通孔205上方,与所述第一通孔205形成台阶通孔。
所述第二平坦化层204表面制备有图案化的阳极金属层207;所述第二平坦化层204表面制备有像素定义堤部208阵列,一像素定义堤部208位于相邻两阳极金属图案之间;所述像素定义堤部208形成的像素区域内制备有发光材料209。
本发明的有益效果为:相较于现有的OLED显示面板制备方法,本发明提供的OLED显示面板制备方法,将平坦化层分两道工序制备,可得到较高平坦度的平坦化层;解决了现有技术的IJP-AMOLED在制程中,平坦化层难以达到制备需求的平整度,整个像素区最大段差较大,ink的铺展性不均匀,烘干后的发光层膜厚不均匀,进而影响OLED显示面板的显示效果。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (10)
1.一种OLED显示面板制备方法,其特征在于,所述方法包括:
步骤S10,提供TFT阵列基板,所述TFT阵列基板表面具有凸起部,所述TFT阵列基板包括扫描线和数据线,所述扫描线和所述数据线的设置,使得所述扫描线和所述数据线的对应的区域高于所述TFT阵列基板的其他区域,形成所述凸起部;
步骤S20,在所述TFT阵列基板表面制备第一平坦化层,所述第一平坦化层的膜厚大于所述凸起部的高度,所述在所述TFT阵列基板表面制备第一平坦化层包括:在所述TFT阵列基板表面涂布厚度为所述凸起部高度两倍的感光材料,将感光材料固化形成所述第一平坦化层;以及,
步骤S30,在所述第一平坦化层表面制备第二平坦化层。
2.根据权利要求1所述的方法,其特征在于,所述第二平坦化层的膜厚大于或等于所述第一平坦化层的膜厚。
3.根据权利要求2所述的方法,其特征在于,
所述步骤S20还包括:
步骤S201,在所述第一平坦化层的对应区域制备第一通孔;
所述步骤S30还包括:
步骤S301,在所述第二平坦化层的对应区域制备第二通孔,所述第二通孔位于相对应的所述第一通孔的上方。
4.根据权利要求3所述的方法,其特征在于,所述第二通孔的孔径大于所述第一通孔的孔径,所述第一通孔与所述第二通孔形成台阶通孔。
5.根据权利要求3所述的方法,其特征在于,所述方法还包括:
步骤S40,在所述第二平坦化层表面制备阳极金属层,并将所述阳极金属层经图案化处理形成阳极金属图案阵列,所述阳极金属图案阵列包括至少两阳极金属图案;
步骤S50,在所述第二平坦化层表面制备像素定义堤部阵列,所述像素定义堤部阵列包括至少两像素定义堤部,一所述像素定义堤部位于相邻两所述阳极金属图案之间;
步骤S60,在所述像素定义堤部形成的像素区域内制备发光材料。
6.根据权利要求3所述的方法,其特征在于,所述方法还包括:
步骤S40,在所述第二平坦化层表面制备第三平坦化层;
所述步骤S40还包括:
步骤S401,在所述第三平坦化层的对应区域制备第三通孔,所述第三通孔位于相对应的所述第二通孔的上方。
7.根据权利要求6所述的方法,其特征在于,所述第三通孔的孔径大于所述第二通孔的孔径,所述第三通孔、第二通孔以及第三通孔形成台阶通孔。
8.根据权利要求1所述的方法,其特征在于,所述第一平坦化层采用聚酰亚胺材料制备,所述第二平坦化层采用聚甲基丙烯酸甲酯材料制备。
9.根据权利要求1所述的方法,其特征在于,所述第一平坦化层和所述第二平坦化层均采用聚酰亚胺材料制备。
10.一种使用如权利要求1所述的OLED显示面板制备方法制得的OLED显示面板,其特征在于,所述OLED显示面板包括:
TFT阵列基板,所述TFT阵列基板表面具有凸起部,所述TFT阵列基板包括扫描线和数据线,所述扫描线和所述数据线的设置,使得所述扫描线和所述数据线的对应的区域高于所述TFT阵列基板的其他区域,形成所述凸起部;
第一平坦化层,制备于所述TFT阵列基板表面,所述第一平坦化层的膜厚大于所述凸起部的高度,所述在所述TFT阵列基板表面制备第一平坦化层包括:在所述TFT阵列基板表面涂布厚度为所述凸起部高度两倍的感光材料,将感光材料固化形成所述第一平坦化层;以及,
第二平坦化层,制备于所述第一平坦化层表面。
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