WO2015079356A1 - Electronic device and driving method thereof - Google Patents

Electronic device and driving method thereof Download PDF

Info

Publication number
WO2015079356A1
WO2015079356A1 PCT/IB2014/066089 IB2014066089W WO2015079356A1 WO 2015079356 A1 WO2015079356 A1 WO 2015079356A1 IB 2014066089 W IB2014066089 W IB 2014066089W WO 2015079356 A1 WO2015079356 A1 WO 2015079356A1
Authority
WO
WIPO (PCT)
Prior art keywords
display
display region
region
film
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2014/066089
Other languages
English (en)
French (fr)
Inventor
Shunpei Yamazaki
Hajime Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to KR1020257016046A priority Critical patent/KR20250078585A/ko
Priority to KR1020217033809A priority patent/KR20210129272A/ko
Priority to CN202110323206.8A priority patent/CN113031703B/zh
Priority to KR1020237027422A priority patent/KR102613466B1/ko
Priority to KR1020237042600A priority patent/KR102810509B1/ko
Priority to KR1020167017255A priority patent/KR102317295B1/ko
Priority to CN201480064843.6A priority patent/CN105874525B/zh
Publication of WO2015079356A1 publication Critical patent/WO2015079356A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1615—Constructional details or arrangements for portable computers with several enclosures having relative motions, each enclosure supporting at least one I/O or computing function
    • G06F1/1616—Constructional details or arrangements for portable computers with several enclosures having relative motions, each enclosure supporting at least one I/O or computing function with folding flat displays, e.g. laptop computers or notebooks having a clamshell configuration, with body parts pivoting to an open position around an axis parallel to the plane they define in closed position
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1626—Constructional details or arrangements for portable computers with a single-body enclosure integrating a flat display, e.g. Personal Digital Assistants [PDAs]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G06F1/1641—Details related to the display arrangement, including those related to the mounting of the display in the housing the display being formed by a plurality of foldable display components
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G06F1/1643—Details related to the display arrangement, including those related to the mounting of the display in the housing the display being associated to a digitizer, e.g. laptops that can be used as penpads
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G06F1/1647—Details related to the display arrangement, including those related to the mounting of the display in the housing including at least an additional display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G06F1/1652—Details related to the display arrangement, including those related to the mounting of the display in the housing the display being flexible, e.g. mimicking a sheet of paper, or rollable
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/51—Housings
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/53—Constructional details of electronic viewfinders, e.g. rotatable or detachable
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/56—Cameras or camera modules comprising electronic image sensors; Control thereof provided with illuminating means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/63—Control of cameras or camera modules by using electronic viewfinders
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/63—Control of cameras or camera modules by using electronic viewfinders
    • H04N23/631—Graphical user interfaces [GUI] specially adapted for controlling image capture or setting capture parameters
    • H04N23/632—Graphical user interfaces [GUI] specially adapted for controlling image capture or setting capture parameters for displaying or modifying preview images prior to image capturing, e.g. variety of image resolutions or capturing parameters

Definitions

  • One embodiment of the present invention relates to a display device capable of display on a curved surface. Another embodiment of the present invention relates to a display device capable of display on different surfaces. Another embodiment of the present invention relates to an electronic device, a light-emitting device, or a lighting device which includes a display device capable of display on a curved surface, or a manufacturing method thereof. Another embodiment of the present invention relates to an electronic device, a light-emitting device, or a lighting device which is capable of display on different surfaces, or a manufacturing method thereof.
  • one embodiment of the present invention is not limited to the above technical field.
  • the technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method.
  • one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter.
  • examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a light-emitting device, a liquid crystal display device, a power storage device, a memory device, a method for driving any of them, and a method for manufacturing any of them.
  • Recent display devices are expected to be applied to a variety of uses and become diversified. For example, a reduction in thickness, improvement in performance, and multi-functionalization of a portable information terminal such as a smartphone or a tablet terminal including a touch panel have progressed.
  • Patent Document 1 discloses a flexible active matrix light-emitting device in which an organic EL element and a transistor serving as a switching element are provided over a film substrate.
  • Patent Document 1 Japanese Published Patent Application No. 2003-174153
  • An object of one embodiment of the present invention is to provide a novel electronic device. Another object of one embodiment of the present invention is to provide an electronic device capable of a variety of display. Another object of one embodiment of the present invention is to provide an electronic device which can be operated in a variety of ways. Another object of one embodiment of the present invention is to provide a display device (display panel) which can be used for such an electronic device. Another object of one embodiment of the present invention is to provide a novel display device or the like.
  • One embodiment of the present invention is an electronic device including a display device and first to third surfaces.
  • the first surface includes a region in contact with the second surface.
  • the second surface includes a region in contact with the third surface.
  • the first surface includes a region opposite to the third surface.
  • the display device includes first to third display regions.
  • the first display region includes a region overlapping with the first surface.
  • the second display region includes a region overlapping with the second surface.
  • the third display region includes a region overlapping with the third surface.
  • the first display region has a larger area than the third display region.
  • Another embodiment of the present invention is an electronic device including a display device, an input device, and first to third surfaces.
  • the first surface includes a region in contact with the second surface.
  • the second surface includes a region in contact with the third surface.
  • the first surface includes a region opposite to the third surface.
  • the display device includes first to third display regions.
  • the first display region includes a region overlapping with the first surface.
  • the second display region includes a region overlapping with the second surface.
  • the third display region includes a region overlapping with the third surface.
  • the input device includes a region overlapping with the first display region, a region overlapping with the second display region, and a region overlapping with the third display region.
  • the first display region has a larger area than the third display region.
  • Another embodiment of the present invention is an electronic device including a display device and first to third surfaces.
  • the first surface includes a region in contact with the second surface.
  • the second surface includes a region in contact with the third surface.
  • the first surface includes a region opposite to the third surface.
  • the display device includes first to third display regions.
  • the first display region includes a region overlapping with the first surface.
  • the second display region includes a region overlapping with the second surface.
  • the third display region includes a region overlapping with the third surface.
  • the display device functions as a touch sensor in the first to third display regions.
  • the first display region has a larger area than the third display region.
  • Another embodiment of the present invention is an electronic device including a display device, an image sensor, and first to third surfaces.
  • the first surface includes a region in contact with the second surface.
  • the second surface includes a region in contact with the third surface.
  • the first surface includes a region opposite to the third surface.
  • the display device includes first to third display regions.
  • the first display region includes a region overlapping with the first surface.
  • the second display region includes a region overlapping with the second surface.
  • the third display region includes a region overlapping with the third surface.
  • the display device has a function of displaying a first image obtained by the image sensor in the first display region.
  • the display device has a function of displaying a second image obtained by the image sensor in the second display region.
  • Another embodiment of the present invention is the electronic device which has the above structure and in which the second surface is a side surface.
  • Another embodiment of the present invention is a method for driving an electronic device including a display device, an image sensor, and first to third surfaces.
  • the first surface includes a region in contact with the second surface.
  • the second surface includes a region in contact with the third surface.
  • the first surface includes a region opposite to the third surface.
  • the display device includes first to third display regions.
  • the first display region includes a region overlapping with the first surface.
  • the second display region includes a region overlapping with the second surface.
  • the third display region includes a region overlapping with the third surface.
  • the method for driving the electronic device includes displaying a first image obtained by the image sensor in the first display region and displaying a second image obtained by the image sensor in the second display region.
  • Another embodiment of the present invention is the method for driving the electronic device having the above structure in which the second surface is a side surface.
  • the display device might include any of the following modules in its category: a module in which a connector such as a flexible printed circuit (FPC) or a tape carrier package (TCP) is attached to a display panel (display device); a module having a TCP provided with a printed wiring board at the end thereof; and a module having an integrated circuit (IC) directly mounted by a chip on glass (COG) method over a substrate over which a display element is formed.
  • a connector such as a flexible printed circuit (FPC) or a tape carrier package (TCP) is attached to a display panel (display device); a module having a TCP provided with a printed wiring board at the end thereof; and a module having an integrated circuit (IC) directly mounted by a chip on glass (COG) method over a substrate over which a display element is formed.
  • COG chip on glass
  • a novel electronic device can be provided.
  • an electronic device capable of a variety of display can be provided.
  • an electronic device which can be operated in a variety of ways can be provided.
  • a display device (display panel) which can be used for such an electronic device can be provided.
  • a novel display device or the like can be provided.
  • an electronic device or the like by which an appropriate image can be shot can be provided.
  • an electronic device or the like which can emit light to an object can be provided.
  • an electronic device or the like in which a battery can be easily replaced can be provided.
  • an electronic device or the like which can be operated can be provided.
  • an electronic device or the like by which a shooting condition can be checked by an object of shooting can be provided.
  • an electronic device or the like which can easily perform wireless communication can be provided.
  • an electronic device or the like which can produce a good quality sound can be provided.
  • an electronic device or the like which can be bent or opened can be provided.
  • FIGS. 1A1, 1A2, 1B1, and 1B2 illustrate structure examples of an electronic device of an embodiment
  • FIGS. 2A1, 2A2, 2B1, and 2B2 illustrate structure examples of an electronic device of an embodiment
  • FIGS. 3A1, 3A2, 3B1, and 3B2 illustrate structure examples of an electronic device of an embodiment
  • FIGS. 4A1, 4A2, 4B1, and 4B2 illustrate structure examples of an electronic device of an embodiment
  • FIGS. 5A to 5C illustrate structure examples of an electronic device of an embodiment
  • FIGS. 6 A to 6C illustrate structure examples of an electronic device of an embodiment
  • FIGS. 7 A and 7B illustrate a structure example of an electronic device of an embodiment
  • FIGS. 8A1, 8A2, 8B1, and 8B2 illustrate structure examples of an electronic device of an embodiment
  • FIGS. 9A1, 9A2, 9B1, and 9B2 illustrate structure examples of an electronic device of an embodiment
  • FIGS. 10A1, 10A2, 10B 1, and 10B2 illustrate structure examples of an electronic device of an embodiment
  • FIGS. 11A1, 11A2, 1 IB 1, and 11B2 illustrate structure examples of an electronic device of an embodiment
  • FIGS. 12A1 and 12A2 illustrate a structure example of an electronic device of an embodiment
  • FIGS. 13A1, 13A2, and 13B illustrate a structure example of an electronic device of an embodiment
  • FIGS. 14A1, 14A2, and 14B illustrate a structure example of an electronic device of an embodiment
  • FIGS. 15A and 15B illustrate structure examples of an electronic device of an embodiment
  • FIGS. 16A1, 16A2, 16B 1, and 16B2 illustrate structure examples of an electronic device of an embodiment
  • FIGS. 17A1 and 17A2 illustrate a structure example of an electronic device of an embodiment
  • FIGS. 18A1, 18A2, 18B 1, and 18B2 illustrate structure examples of an electronic device of an embodiment
  • FIGS. 19A1, 19A2, 19B 1, and 19B2 illustrate structure examples of an electronic device of an embodiment
  • FIG. 20 illustrates a structure example of an electronic device of an embodiment
  • FIG. 21 illustrates a structure example of an electronic device of an embodiment
  • FIG. 22 illustrates a structure example of an electronic device of an embodiment
  • FIGS. 23A to 23C illustrate a structure example of an electronic device of an embodiment
  • FIGS. 24 A to 24E illustrate a structure example of an electronic device of an embodiment
  • FIGS. 25A to 25C illustrate a structure example of an electronic device of an embodiment
  • FIGS. 26 A to 26D illustrate structure examples of an electronic device of an embodiment
  • FIGS. 27 A to 27C illustrate structure examples of an electronic device of an embodiment
  • FIGS. 28 A to 28C illustrate a structure example of a light-emitting panel of an embodiment
  • FIGS. 29 A to 29C illustrate structure examples of a light-emitting panel of an embodiment
  • FIGS. 30A to 30C illustrate structure examples of a light-emitting panel of an embodiment
  • FIGS. 31A to 31C are cross-sectional TEM images and a local Fourier transform image of an oxide semiconductor
  • FIGS. 32A and 32B show nanobeam electron diffraction patterns of oxide semiconductor films and FIGS. 32C and 32D illustrate an example of a transmission electron diffraction measurement apparatus;
  • FIG. 33A shows an example of structural analysis by transmission electron diffraction measurement and FIGS. 33B and 33C show plan-view TEM images.
  • a content (or may be part of the content) described in one embodiment may be applied to, combined with, or replaced with a different content (or may be part of the different content) described in the embodiment and/or a content (or may be part of the content) described in another embodiment or other embodiments.
  • an electronic device of one embodiment of the present invention and a display device (also referred to as a display panel) that can be used in the electronic device are described with reference to drawings.
  • FIG. 1A1 is a schematic perspective view illustrating the front surface side of an electronic device described below
  • FIG. 1A2 is a schematic perspective view illustrating the rear surface side thereof.
  • the electronic device illustrated in FIGS. 1A1 and 1A2 includes a housing 101 and a display panel 110 provided on a surface (e.g., a front surface, a rear surface, or a side surface) of the housing 101 to perform display. Note that a cover, a resin, or the like is provided over the display panel 110 to prevent a damage and destruction in some cases.
  • the housing 101 has a front surface, a rear surface, a first side surface, a second side surface including a region in contact with the first side surface, a third side surface including a region opposite to the first side surface, and a fourth side surface including a region opposite to the second side surface.
  • the housing 101 has a first side surface.
  • the first side surface includes a region in contact with a front surface and/or a rear surface.
  • the housing 101 has a second side surface.
  • the second side surface includes a region in contact with a front surface and/or a rear surface.
  • the housing 101 has a third side surface.
  • the third side surface includes a region in contact with a front surface and/or a rear surface.
  • the housing 101 has a fourth side surface.
  • the fourth side surface includes a region in contact with a front surface and/or a rear surface.
  • the front surface includes a region opposite to the rear surface.
  • the housing 101 has a plurality of surfaces.
  • the housing 101 has a front surface, a rear surface, and at least four side surfaces. Each surface might smoothly change; thus, the boundary between surfaces is not easily determined in some cases. Description is made using "side surface", and the side surface includes a region of part of a front surface or a rear surface in some cases.
  • the side surface refers to a region which can be observed from the side (for example, the direction in which the rear surface or the front surface cannot be seen).
  • the front surface, the rear surface, the side surface, or the like has a curved surface, it is difficult to determine the boundary in some cases.
  • one region is part of the front surface (rear surface) and part of the side surface.
  • one region is part of one side surface and part of another side surface.
  • the side surface includes a region in contact with the front surface.
  • the side surface includes a region in contact with the rear surface.
  • the side surface includes a region in contact with another side surface.
  • the front surface and/or the rear surface includes a flat region, for example.
  • the front surface and/or the rear surface includes a curved region, for example.
  • the side surface includes a curved region, for example.
  • the side surface includes a flat region, for example.
  • the front surface is referred to as a rear surface, or the rear surface is referred to as a front surface in some cases.
  • the front surface includes a larger display region than the rear surface in some cases.
  • the area of the side surface is smaller than that of the front surface or the rear surface, for example.
  • the housing 101 is not a hexagon but has a larger number of surfaces in some cases.
  • the housing 101 has a smaller number of surfaces than the above in some cases.
  • the display panel 110 includes a display region 111 provided to include a region overlapping with the front surface of the housing 101.
  • the display panel 110 includes a display region 113 provided to include a region overlapping with one of the side surfaces of the housing 101.
  • the display panel 110 includes a display region 116 provided to include a region overlapping with a region of part of the rear surface of the housing 101.
  • a side of a side surface on which the display region 113 is provided is shorter than a side of a side surface on which the display region 113 is not provided, for example.
  • the area of a side surface on which the display region 113 is provided is smaller than that of a side surface on which the display region 113 is not provided, for example.
  • a side surface on which the display region 113 is provided is parallel to the minor-axis direction and perpendicular to the major-axis direction, for example.
  • the boundaries of the display region 111, the display region 113, and the display region 116 are denoted by dotted lines in drawings in some cases. Note that the boundaries can be different from those denoted by dotted lines in drawings depending on circumstances or conditions.
  • a region including a region overlapping with at least the display panel 110 preferably has a curved surface.
  • a side surface is preferably a curved surface such that the inclination of a tangent line is continuous from the front surface to the rear surface of the housing 101, for example.
  • the side surface is preferably a developable surface that is obtained by transforming a flat surface without expansion and contraction. With such a shape, the display panel 110 can be smoothly bent. In other words, the curvature radius when the display panel 110 is bent can be increased.
  • the display panel 110 can be hardly affected by bending, and the lifetime of the display panel 110 can be increased. Furthermore, with such a shape, an image displayed on the display panel 110 can be seen to be smoothly changed. Therefore, the image can be viewed with less unpleasant sensation. Note that one embodiment of the present invention is not limited to the above examples.
  • the area of the display region 111 is larger than that of the display region 116.
  • the length of a side of the display region 111 is longer than that of a side of the display region 116. Therefore, as illustrated in FIGS. 1B 1 and 1B2, a region 201 can be obtained on the rear surface of the housing 101.
  • the display region 116 and the region 201 are provided on the rear surface of the housing 101.
  • the display region 116 is not provided in the region 201.
  • components having a variety of functions can be provided in the region 201.
  • the area of the display region 116 is greater than or equal to 10 % and less than or equal to 90 % of the area of the display region 111.
  • the area of the display region 116 is, for example, greater than or equal to 30 % and less than or equal to 70 % of the area of the display region 111.
  • the length of a side of the display region 116 is greater than or equal to 10 % and less than or equal to 90 % of the length of a side of the display region 111.
  • the length of a side of the display region 116 is, for example, greater than or equal to 30 % and less than or equal to 70 % of the length of a side of the display region 111.
  • a hardware button on a surface of the housing 101 (e.g., a front surface, a rear surface, or a side surface), a hardware button, an external connection terminal, an image sensor, an infrared ray sensor, a microphone, a speaker, or the like may be provided in addition to the display panel 110.
  • FIGS. 1A1 and 1A2 show the case where one side surface of the housing 101 is used as the display region, the display region may be overlapped with another side surface.
  • FIGS. 2A1 and 2A2 show a structure example where a display region 115 is further provided.
  • the display region 115 includes a region overlapping with a side surface opposite to the display region 113.
  • FIG. 2A1 is a schematic perspective view illustrating the front surface side of an electronic device
  • FIG. 2A2 is a schematic perspective view illustrating the rear surface side thereof.
  • FIGS. 2B 1 and 2B2 show the case where the region 201 is provided.
  • FIGS. 3A1 and 3A2 show a structure example where the display panel 110 includes the display region 111, the display region 116, and a display region 112.
  • the display region 112 is provided to include a region overlapping with one of the side surfaces of the housing 101.
  • the length of a side of the side surface on which the display region 112 is provided is longer than that of a side of the side surface on which the display region 112 is not provided (e.g., the side surface on which the display region 113 is provided in FIG. 1A1).
  • the area of the side surface on which the display region 112 is provided is larger than that of the side surface on which the display region 112 is not provided.
  • FIG. 3A1 is a schematic perspective view illustrating the front surface side of the electronic device
  • FIG. 3A2 is a schematic perspective view illustrating the rear surface side thereof.
  • FIGS. 3B1 and 3B2 show the case where the region 201 is provided.
  • FIGS. 4A1 and 4A2 show a structure example of the case where a display region 114 including a region overlapping with the side surface opposite to the display region 112 is further provided.
  • FIG. 4A1 is a schematic perspective view illustrating the front surface side of an electronic device
  • FIG. 4A2 is a schematic perspective view illustrating the rear surface side thereof.
  • FIGS. 4B1 and 4B2 show the case where the region 201 is provided.
  • FIGS. 5A to 5C show structure examples where the display panel 110 includes the display region 111, the display region 116, the display region 112, and the display region 113.
  • the display region 112 is provided to include a region overlapping with one of the side surfaces of the housing 101.
  • the display region 113 is provided to include a region overlapping with another one of the side surfaces of the housing 101.
  • the length of a side of the side surface on which the display region 112 is provided is longer than that of a side of the side surface on which the display region 113 is provided, for example.
  • the area of the side surface on which the display region 112 is provided is larger than that of the side surface on which the display region 113 is provided, for example.
  • FIG. 5A shows an example of a schematic perspective view illustrating the front surface side of an electronic device
  • FIG. 5B shows an example of a schematic perspective illustrating the rear surface side thereof
  • FIG. 5C shows an example different from that in FIG. 5B.
  • FIGS. 6A to 6C show the case where the region 201 is provided. [0049]
  • display can be performed not only on a surface parallel to a front surface of a housing but also on a side surface and a rear surface of the housing.
  • a display region is preferably provided along two or more side surfaces of the housing because the variations of display are further increased.
  • the display region 111 provided along the front surface of the housing 101, the display region 116 provided along the rear surface of the housing 101, and the display regions provided along the side surfaces of the housing 101 may be independently used as display regions to display different images and the like, or two or more of the display regions may display one image or the like. For example, a continuous image may be displayed on the display region 111 provided along the front surface of the housing 101, the display region 112 provided along the side surface of the housing 101, the display region 116 provided along the rear surface of the housing 101, and the like.
  • text data a plurality of icons associated with an application or the like, and the like may be displayed on the display region 111 provided along the front surface of the housing 101.
  • Icons associated with an application or the like, and the like may be displayed on the display region 112.
  • display can be performed so that text data or the like rolls (moves) across a plurality of display regions (e.g., the display region 113 and the display region 112) provided along the side surfaces of the housing 101.
  • display can be performed so that text data or the like rolls (moves) across display regions along the front surface, the side surface, and the rear surface.
  • transmitter information (e.g., a name, a phone number, an e-mail address, and the like of a transmitter) may be displayed on not only the display region 111 but also the display region 116, a display region provided along the side surface such as the display region 112, and the like when, for example, a phone call or a text message is received.
  • transmitter information may be displayed to flow in the display region 112 and the display region 113 when a text message is received.
  • FIGS. 7 A and 7B show an example of a use state of an electronic device.
  • FIG. 7A a plurality of icons 121 are displayed on the display region 111 and a slide bar
  • FIGS. 7 A and 7B illustrate a state where images of the plurality of icons 121 and the like are slid up from the display region 111 to the display region 113 by sliding the slide bar 125 down with the finger 126.
  • an image displayed on the display region 111 is an icon
  • one embodiment of the present invention is not limited thereto; depending on a launched application, a variety of data such as text, still images, and moving images can be displayed by sliding the slide bar 125 with a finger or the like.
  • the position of the slide bar 125 is not limited to the display region 112, and the slide bar 125 may be provided on the display region 111, the display region 113, the display region 114, the display region 116, or the like.
  • display on the display region 111 provided along the front surface of the housing 101 and/or display on the display region 116 provided along the rear surface thereof may be turned off (e.g., black display), data may be displayed only on the display region 112 or the like provided along the side surface, and the display state may be switched.
  • Display on the display region 111 or the display region 116 which has an area larger than those of the other display regions is not performed, so that power consumption in a standby time can be reduced.
  • only display on the display region 111 is performed and display on at least one of regions such as the display region 116 and a side surface display region is not performed, so that power consumption in use can be reduced.
  • display of data may be performed in only part of the display region 111 provided along the front surface of the housing 101, the display region 116 provided along the rear surface of the housing 101, the display region 112 provided along the side surface of the housing 101, and the like.
  • display may be performed in the display region 111 and the display region 116, and display of the display region 112 provided along the side surface, or the like may be turned off.
  • an input device such as a touch sensor be included at a position overlapping with the display panel 110, specifically, in regions overlapping with display regions.
  • a touch sensor for example, a sheet-like capacitive touch sensor may be provided to overlap with the display panel 110.
  • a so-called in-cell touch sensor in which the display panel 110 itself has a touch sensor function may be used. In this case, it can be said that the display panel 110 has not only a display function but also a function as a touch sensor.
  • a capacitive touch sensor may be used or an optical touch sensor using a photoelectric conversion element may be used.
  • a so-called on-cell touch sensor having a touch sensor function on a counter substrate of the display panel 110 may be used.
  • the display panel 110 has not only a display function but also a touch sensor function.
  • a so-called cover integrated touch panel in which a cover or a cover glass which is provided on an outermost surface of the housing 101 and prevents damage and the like has a touch sensor function may be used.
  • a touch sensor in which an optical film included in the display panel 110 has a touch sensor function may be used.
  • an input device such as a touch sensor is provided in the entire region where the display panel 110 can perform display, for example.
  • the display region 111, the display region 112, the display region 113, the display region 114, the display region 115, and the display region 116 may include a region where an input device such as a touch sensor is not provided.
  • part or the whole of the display region 116 may include a region where an input device such as a touch sensor is not provided.
  • a region of part or the whole of the display region 112 and a region of part or the whole of the display region 114 may include a region where an input device such as a touch sensor is not provided. By providing such a region where a touch sensor is not provided, a malfunction can be prevented. Furthermore, an electronic device can be easily handled.
  • combination of touch operations on the display region 111, the display region 112, the display region 113, the display region 114, the display region 115, or the display region 116 is preferably associated with an application operation.
  • An example of association between combination of touch operations on the display region 112, the display region 113, and the display region 115 and an application operation is shown. For example, a power on/off operation is performed when all the three display regions are touched.
  • an application associated with text messages is started and contents of a text message are displayed at the same time.
  • application for making a phone call is started.
  • a web browser is started.
  • the above association between the touch operation and the application is an example, and it is preferable that a developer of operating system or application software or a user can determine an association as appropriate.
  • An electronic device of one embodiment of the present invention can perform display along not only the front surface but also one or more side surfaces of the housing and display can also be performed on the rear surface of the housing; thus, display can be performed in various ways as compared with a conventional electronic device. Furthermore, a touch sensor is provided in each of the display regions; thus, various operations can be performed as compared with a conventional electronic device and an electronic device capable of a more intuitive operation can be obtained.
  • the electronic device may be used as a lighting device, not the display panel 110.
  • the device by using the device as a lighting device, it can be used as interior lighting having an attractive design.
  • it can be used as lighting with which various directions can be illuminated.
  • it may be used as a light source, e.g., a backlight or a front light, not the display panel 110.
  • it may be used as a lighting device for the display panel.
  • FIGS. 8A1 and 8A2 show an example.
  • FIG. 8A1 shows an example of a schematic perspective view illustrating the front surface side of an electronic device
  • FIG. 8A2 shows an example of a schematic perspective view illustrating the rear surface side thereof.
  • FIGS. 8B1 and 8B2 show an example of schematic perspective views illustrating the front surface side and the rear surface side of an electronic device.
  • FIGS. 9A1 and 9A2 show an example of schematic perspective views illustrating the front surface side and the rear surface side of an electronic device.
  • FIGS. 9B 1 and 9B2 show an example of schematic perspective views illustrating the front surface side and the rear surface side of an electronic device.
  • FIGS. 10A1 and 10A2 show an example of schematic perspective views illustrating the front surface side and the rear surface side of an electronic device.
  • FIGS. 10B1 and 10B2 show an example of schematic perspective views illustrating the front surface side and the rear surface side of an electronic device.
  • FIGS. 11A1 and 11 A2 show an example of schematic perspective views illustrating the front surface side and the rear surface side of an electronic device.
  • FIGS. 1 IB 1 and 11B2 show an example of schematic perspective views illustrating the front surface side and the rear surface side of an electronic device.
  • FIG. 12A1 is a schematic perspective view illustrating the front surface side of an electronic device
  • FIG. 12A2 is a schematic perspective view illustrating the rear surface side thereof.
  • This embodiment shows an example of a basic principle. Thus, part or the whole of this embodiment can be freely combined with, applied to, or replaced with part or the whole of another embodiment.
  • FIGS. 1B1 and 1B2 an example where an image sensor is provided in the region 201 is shown.
  • FIGS. 1B1 and 1B2 an example where an image sensor is provided in the region 201 in FIGS. 1B1 and 1B2 is shown. Note that one embodiment of the present invention is not limited thereto. In a variety of drawings, e.g., FIGS. 2B1 and 2B2, a variety of elements or the like can be provided in the region 201 similarly.
  • FIG. 13A1 is a schematic perspective view illustrating the front surface side of an electronic device
  • FIG. 13A2 is a schematic perspective view illustrating the rear surface side thereof.
  • An image sensor 202 is provided in the region 201.
  • the image sensor 202 has a function of shooting a still image. That is, the image sensor 202 has a function of a camera. Therefore, the image sensor 202 includes a variety of optical components such as a lens in some cases.
  • a still image, a moving image, or the like can be shot.
  • an image 206 of the object 205 is displayed on the display region 111, for example.
  • a state of the object 205 can be displayed in real time.
  • the image 206 is checked, a still image or a moving image of the object 205 is shot.
  • an image 204 for lighting is displayed on the display region 116, for example.
  • Light is emitted to the object 205 from a region on which the image 204 for lighting is displayed. As a result, the illuminance of the object 205 can be increased.
  • an appropriate clear image can be shot.
  • the image 204 for lighting is desirably a white image, for example. Note that one embodiment of the present invention is not limited thereto.
  • the display color of the image 204 for lighting By changing the display color of the image 204 for lighting, the color of light emitted to the object 205 can be changed. Accordingly, images of the object 205 in a variety of states can be shot. For example, in the case where ambient environment light is reddish, bluish, or greenish, or the like, the image 204 for lighting is changed to an appropriate color; thus, an appropriate image can be shot.
  • an image of the object 205 may be shot a plurality of times. For example, images are shot with the display of the image 204 for lighting being white, incandescent color, and daylight white. Then, by processing these images, an appropriate image can be obtained.
  • the image 204 for lighting desirably has the same color or gray scale on the entire surface, for example. Note that one embodiment of the present invention is not limited thereto. A plurality of regions may be provided, and images with respective different colors may be used for the regions.
  • FIGS. 14A1 and 14A2 show an example where the image sensor 202 and a lighting element 203 are provided in the region 201.
  • FIG. 14A1 is a schematic perspective view illustrating the front surface side of an electronic device and FIG. 14A2 is a schematic perspective view illustrating the rear surface side thereof.
  • FIG. 14B by setting the image sensor 202 and the lighting element 203 to face the object 205, a still image, a moving image, or the like can be shot.
  • the image 206 of the object 205 is displayed on the display region 111, for example.
  • the object 205 can be displayed in real time. While the image 206 is checked, a still image or a moving image of the object 205 is shot. At this time, an image 207 of the object 205 is also displayed on the display region 116, for example. As a result, the object 205 can check how an image thereof is shot, while seeing the image 207. Thus, an image can be shot at an appropriate angle.
  • the image 206 and the image 207 are displayed on different display regions. Therefore, they are different in the size, resolution, or the like in some cases. It can be said that the image 206 and the image 207 are different images. Note that the image
  • the image 206 and the image 207 may have the same size and the same resolution.
  • the illuminance of the object 205 is low, light is emitted to the object 205 from the lighting element 203. As a result, the illuminance of the object 205 can be increased. Thus, an appropriate clear image can be shot.
  • the lighting element 203 desirably emits white light, for example. Note that one embodiment of the present invention is not limited thereto.
  • the emission color of the lighting element 203 By changing the emission color of the lighting element 203, the color of light emitted to the object 205 can be changed. Accordingly, images of the object 205 in a variety of states can be shot. For example, in the case where ambient environment light is reddish, bluish, or greenish, or the like, the emission color of the lighting element 203 is changed to an appropriate color; thus, an appropriate image can be shot.
  • an image of the object 205 may be shot a plurality of times. For example, images are shot with the emission color of the lighting element 203 being white, incandescent color, and daylight white. Then, by processing these images, an appropriate image can be obtained.
  • the lighting element 203 desirably has the same color or gray scale, for example. Note that one embodiment of the present invention is not limited thereto. A plurality of lighting elements 203 emitting light of different colors may be provided.
  • the image 204 for lighting may be displayed as illustrated in FIG. 15A or, depending on circumstances, not the image 207 but the image 204 for lighting may be displayed as illustrated in FIG. 15B.
  • the illuminance can be increased or the color of illumination light can be changed.
  • the lighting element 203 and the image 204 for lighting can be used as a plurality of lighting elements.
  • the display region 111 and the display region 116 are used is shown here, one embodiment of the present invention is not limited thereto. Another display region may be used.
  • FIGS. 16A1 and 16A2 An example of this case is shown in FIGS. 16A1 and 16A2.
  • FIG. 16A1 is a schematic perspective view illustrating the front surface side of an electronic device and
  • FIG. 16A2 is a schematic perspective view illustrating the rear surface side thereof.
  • FIG. 16B1 is a schematic perspective view illustrating the front surface side of an electronic device and
  • FIG. 16B2 is a schematic perspective view illustrating the rear surface side thereof.
  • the icon 208 has a function as a shutter button, for example. An image can be shot by touching the icon 208. Alternatively, the focus can be adjusted by touching the icon 208.
  • the icon 208 has a function as a shutter button here, one embodiment of the present invention is not limited thereto. By providing dedicated hardware, e.g., a shutter button, a shutter function may be obtained.
  • FIGS. 17A1 and 17A2 show an example of this case.
  • FIG. 17A1 is a perspective schematic view illustrating the front surface side of an electronic device and
  • FIG. 17A2 is a perspective schematic view illustrating the rear surface side thereof.
  • the icon 209 has a function as a slider, for example.
  • a slider By moving a slider, an image can be enlarged or reduced at the time of shooting.
  • a zoom function can be controlled.
  • enlarging or reducing an image may be controlled optically by controlling a lens of the image sensor 202 or by controlling a digital image by software. Therefore, before an image is shot, the magnification can be controlled by moving the bar of the icon 209.
  • a zoom function is obtained by using the icon 209 here, one embodiment of the present invention is not limited thereto. By providing dedicated hardware, e.g., an operation button, a zoom function may be obtained.
  • the icon 208 and the icon 209 may be displayed on the same display region (e.g., the display region 112). Furthermore, a variety of icons, characters, images, or the like can be displayed on display regions.
  • the image sensor 202 or the lighting element 203 can be provided in the large region. Therefore, for example, a large lens can be provided in the image sensor 202. Alternatively, the image sensor 202 having a large size can be provided. Thus, a clear and high-resolution image can be shot.
  • FIGS. 18A1 and 18A2 show an example of this case.
  • FIG. 18A1 is a schematic perspective view illustrating the front surface side of an electronic device and
  • FIG. 18A2 is a schematic perspective view illustrating the rear surface side thereof.
  • FIGS. 18B1 and 18B2 show another example.
  • FIG. 18B1 is a schematic perspective view illustrating the front surface side of an electronic device and
  • FIG. 18B2 is a schematic perspective view illustrating the rear surface side thereof.
  • a plurality of image sensors 202 may be provided. At least one of the image sensors 202 may be provided in the region 201. Alternatively, all of the image sensors 202 may be provided in a region other than the region 201.
  • FIGS. 19A1 and 19A2 show an example of this case.
  • FIG. 19A1 is a schematic perspective view illustrating the front surface side of an electronic device and
  • FIG. 19A2 is a schematic perspective view illustrating the rear surface side thereof.
  • FIGS. 19B1 and 19B2 show another example.
  • FIG. 19B1 is a schematic perspective view illustrating the front surface side of an electronic device and
  • FIG. 19B2 is a schematic perspective view illustrating the rear surface side thereof.
  • Such a shooting operation may be performed when software which achieves a camera function is carried out or as part of software which achieves another function.
  • the shooting operation may be performed when software which achieves a videophone function is carried out.
  • software it may be installed from a computer to the electronic device or it may be installed to the electronic device through a wired or wireless telecommunication line.
  • software may be initially stored in a memory device included in the el ectroni c devi ce .
  • This embodiment is obtained by performing change, addition, modification, removal, application, superordinate conceptualization, or subordinate conceptualization on part or the whole of another embodiment.
  • part or the whole of this embodiment can be freely combined with, applied to, or replaced with part or the whole of another embodiment.
  • This embodiment shows an example where a variety of components are provided in the region 201.
  • a variety of components are provided in the region 201 in FIGS. 1B1 and 1B2 is shown here, one embodiment of the present invention is not limited thereto.
  • FIGS. 2B 1 and 2B2 a variety of elements or the like can be provided in the region 201 similarly.
  • the components described in Embodiment 2 may be provided in the region 201 or the like.
  • FIG. 20 shows an example where a battery 401 is provided in the region 201.
  • FIG. 20 is a schematic perspective view illustrating the rear surface side of the electronic device.
  • FIG. 20 illustrates a state where a lid is opened and the battery 401 is removed from the housing 101.
  • the battery 401 can be covered with the lid so that the battery 401 is not dropped.
  • the battery 401 can be removed in FIG. 20, one embodiment of the present invention is not limited thereto. Depending on circumstances or conditions, the lid is not necessarily provided and the battery 401 may be unremovable. In that case, the battery 401 can have a large thickness because the battery 401 is provided in the region 201 where a display region is not provided. Thus, the capacitance of the battery 401 can be increased.
  • FIG. 21 shows an example where a receiving unit
  • FIG. 21 is a schematic perspective view illustrating the rear surface side of an electronic device.
  • FIG. 21 illustrates a state where the receiving unit 402 is provided inside the housing 101 and communicates with a communication device 403 wirelessly.
  • the receiving unit 402 can be used as an antenna for near field communication (NFC).
  • NFC near field communication
  • the region 201 is provided not to overlap with the display region 116.
  • a touch sensor also is not provided in the region 201.
  • a radio wave, magnetism, an electromagnetic wave, and the like are not disturbed by a touch sensor, a display panel, or the like, and the receiving unit 402 can be efficiently used.
  • the receiving unit 402 may have a transmitting function, not a receiving function. Alternatively, the receiving unit 402 may have both of a transmitting function and a receiving function. For example, the receiving unit 402 is not limited as long as it can communicate data, energy, and the like.
  • the receiving unit 402 can be used for a variety of purposes, e.g., TV, phone, Bluetooth, short-distance communication, or the like in addition to NFC. Furthermore, the receiving unit 402 can be used as a unit for charging an electronic device. For example, with a coil, an antenna, or the like, an electronic device can be charged wirelessly. [0106]
  • FIG. 22 shows an example where a speaker 404 and a speaker 405 are provided in the region 201.
  • FIG. 22 is a schematic perspective view illustrating the rear surface side of an electronic device.
  • FIG. 22 illustrates a state where the speaker 404 and the speaker 405 are provided in the housing 101.
  • the speaker 404 can emit sound for the left ear and the speaker 405 can emit sound for the right ear.
  • the speaker 404 and the speaker 405 can be provided to be apart from each other in the region 201. Thus, a stereophonic sound can be produced.
  • This embodiment is obtained by performing change, addition, modification, removal, application, superordinate conceptualization, or subordinate conceptualization on part or the whole of another embodiment.
  • part or the whole of this embodiment can be freely combined with, applied to, or replaced with part or the whole of another embodiment.
  • FIGS. 23A to 23C examples where a display panel (a display device) or an electronic device can be used by being bent or folded in a variety of ways are shown. Description is made with reference to FIGS. 23A to 23C.
  • FIG. 23 A illustrates an electronic device 150 of a mode in which the display panel 110 is developed (first mode).
  • FIG. 23C illustrates the electronic device 150 of a mode in which the display panel 110 is folded (second mode).
  • FIG. 23B illustrates the electronic device 150 of a mode in which the display panel 110 is bent. In other words, FIG. 23B illustrates the electronic device 150 in the middle of changing from one of the mode in which the display panel 110 is developed (first mode) and the mode in which the display panel 110 is folded (second mode) to the other.
  • the display panel 110 is bent so that the outside thereof is seen. Note that one embodiment of the present invention is not limited thereto.
  • the display panel 110 may be bent so that the inside thereof is hidden.
  • the electronic device 150 illustrated in FIGS. 23 A to 23C includes the display panel 110 having flexibility.
  • the electronic device 150 further includes a plurality of support panels 153a, a plurality of support panels 155a, and a plurality of support panels 155b.
  • the support panel 153a is formed using, for example, a material having lower flexibility than that of the display panel 110 (i.e., a material harder to bend). Furthermore, the support panel 155a and the support panel 155b are formed using, for example, a material having lower flexibility than that of the support panel 153a (i.e., a material harder to bend). As illustrated in FIGS. 23A to 23C, the support panels are preferably arranged in the periphery of the display panel 110 and on a surface opposite to a display portion of the display panel 110 because the display panel 110 has increased mechanical strength and becomes less likely to be broken.
  • the support panels 153a, 155a, and 155b are preferably formed with a material having a light-blocking property, irradiation of driver circuit portions of the display panel 110 with external light can be suppressed. Accordingly, light deterioration of transistors and the like used in the driver circuit portions can be suppressed.
  • an arithmetic portion, a memory portion, a sensor portion, and the like of the electronic device 150 can be arranged between the display panel 110 and the support panels 155b.
  • the support panels 153a, 155a, and 155b can be formed using plastic, a metal, an alloy, rubber, or the like as a material.
  • Plastic, rubber, or the like is preferably used because it can form a support panel that is lightweight and less likely to be broken.
  • silicone rubber, stainless steel, or aluminum may be used as the support panels 153a, 155a, and 155b.
  • the display panel 110 including the display portion having flexibility in the electronic device 150 can be folded either inward or outward.
  • the display panel 110 is folded to be inside, whereby scratches and stains on the display panel 110 can be suppressed.
  • the region 201 is provided in the vicinity of the display panel 110. Therefore, for example, as in another embodiment, the display region 111 has a larger area than the display region 116. In the region 201, a variety of components can be provided as in another embodiment.
  • FIGS. 24A and 24B illustrate a state where the display panel is folded as illustrated in FIG. 23C.
  • FIG. 24A shows an example of the front surface
  • FIG. 24B shows an example of the rear surface.
  • the image sensor 202 or the lighting element 203 may be provided in the region 201.
  • the image 206 is displayed in the display region 111.
  • the image 207 is displayed in the display region 116.
  • FIG. 24C shows the case where the icon 208 and the icon 209 are displayed on the display region 112, for example.
  • a zoom function such as enlargement and reduction can be controlled.
  • FIGS. 23A to 23C illustrate the case where the region 201 is provided, one embodiment of the present invention is not limited thereto.
  • FIGS. 25A to 25C illustrate the case where the region 201 is not provided.
  • FIGS. 26A and 26B illustrate a state where the display panel is folded. The state illustrated in FIG. 26B may be replaced with the state illustrated in FIG. 26C or FIG. 26D.
  • FIGS. 23A to 23C illustrate the case where the number of folds is one, one embodiment of the present invention is not limited thereto.
  • a plurality of folds may be provided.
  • FIG. 27A shows an example where three folds are provided.
  • FIG. 27B shows an example where four folds are provided.
  • the region 201 is not necessarily provided. An example of this case is shown in FIG. 27C.
  • This embodiment is obtained by performing change, addition, modification, removal, application, superordinate conceptualization, or subordinate conceptualization on part or the whole of another embodiment.
  • part or the whole of this embodiment can be freely combined with, applied to, or replaced with part or the whole of another embodiment.
  • FIGS. 28A to 28C a structure of a touch panel that can be used in an electronic device of one embodiment of the present invention will be described with reference to FIGS. 28A to 28C.
  • FIG. 28A is a front view illustrating a structure of a touch panel that can be used in an electronic device of one embodiment of the present invention.
  • FIG. 28B is a cross-sectional view taken along line A-B and line C-D in FIG. 28 A.
  • FIG. 28C is a cross-sectional view taken along line E-F in FIG. 28A.
  • a touch panel 300 described as an example in this embodiment includes a display portion 301 (see FIG. 28A).
  • the display portion 301 includes a plurality of pixels 302 and a plurality of imaging pixels 308.
  • the imaging pixels 308 can sense a touch of a finger or the like on the display portion 301.
  • a touch sensor can be formed using the imaging pixels 308.
  • Each of the pixels 302 includes a plurality of sub-pixels (e.g., a sub-pixel 302R).
  • sub-pixels e.g., a sub-pixel 302R
  • light-emitting elements and pixel circuits that can supply electric power for driving the light-emitting elements are provided.
  • the pixel circuits are electrically connected to wirings through which selection signals are supplied and wirings through which image signals are supplied.
  • the touch panel 300 is provided with a scan line driver circuit 303g(l) that can supply selection signals to the pixels 302 and an image signal line driver circuit 303s(l) that can supply image signals to the pixels 302.
  • the imaging pixels 308 include photoelectric conversion elements and imaging pixel circuits that drive the photoelectric conversion elements.
  • the imaging pixel circuits are electrically connected to wirings through which control signals are supplied and wirings through which power supply potentials are supplied.
  • control signals include a signal for selecting an imaging pixel circuit from which a recorded imaging signal is read, a signal for initializing an imaging pixel circuit, and a signal for determining the time it takes for an imaging pixel circuit to detect light.
  • the touch panel 300 is provided with an imaging pixel driver circuit 303g(2) that can supply control signals to the imaging pixels 308 and an imaging signal line driver circuit 303s(2) that reads out imaging signals.
  • the touch panel 300 includes a substrate 310 and a counter substrate 370 that faces the substrate 310 (see FIG. 28B).
  • the substrate 310 is a stacked body in which a flexible substrate 310b, a barrier film 310a that prevents diffusion of unintentional impurities to the light-emitting elements, and an adhesive layer 310c that attaches the barrier film 310a to the substrate 310b are stacked.
  • the counter substrate 370 is a stacked body including a flexible substrate 370b, a barrier film 370a that prevents diffusion of unintentional impurities to the light-emitting elements, and an adhesive layer 370c that attaches the barrier film 370a to the substrate 370b (see FIG. 28B).
  • a sealant 360 attaches the counter substrate 370 to the substrate 310.
  • the sealant 360 also serving as an optical adhesive layer has a refractive index higher than that of air.
  • the pixel circuits and the light-emitting elements e.g., a light-emitting element 350R are provided between the substrate 310 and the counter substrate 370.
  • Each of the pixels 302 includes the sub-pixel 302R, a sub-pixel 302G, and a sub-pixel 302B (see FIG. 28C).
  • the sub-pixel 302R includes a light-emitting module 380R
  • the sub-pixel 302G includes a light-emitting module 380G
  • the sub-pixel 302B includes a light-emitting module 380B.
  • the sub-pixel 302R includes the light-emitting element 350R and the pixel circuit that can supply electric power to the light-emitting element 350R and includes a transistor 302t (see FIG. 28B).
  • the light-emitting module 380R includes the light-emitting element 350R and an optical element (e.g., a coloring layer 367R).
  • the light-emitting element 350R includes a lower electrode 351R, an upper electrode 352, and a layer 353 containing a light-emitting organic compound between the lower electrode 351R and the upper electrode 352 (see FIG. 28C).
  • the layer 353 containing a light-emitting organic compound includes a light-emitting unit 353a, a light-emitting unit 353b, and an intermediate layer 354 between the light-emitting units 353a and 353b.
  • the light-emitting module 380R includes the coloring layer 367R on the counter substrate 370.
  • the coloring layer transmits light of a particular wavelength and is, for example, a layer that selectively transmits light of red, green, or blue color. Note that a region that transmits light emitted from the light-emitting element as it is may be provided as well.
  • the light-emitting module 380R for example, includes the sealant 360 that is in contact with the light-emitting element 350R and the coloring layer 367R.
  • the coloring layer 367R is positioned in a region overlapping with the light-emitting element 350R. Accordingly, part of light emitted from the light-emitting element 350R passes through the sealant 360 that also serves as an optical adhesive layer and through the coloring layer 367R and is emitted to the outside of the light-emitting module 380R as indicated by arrows in FIGS. 28B and 28C.
  • a display element a display device which is a device including a display element, a light-emitting element, and a light-emitting device which is a device including a light-emitting element can employ a variety of modes or can include a variety of elements.
  • Examples of a display element, a display device, a light-emitting element, or a light-emitting device include an EL (electroluminescent) element (e.g., an EL element including organic and inorganic materials, an organic EL element, or an inorganic EL element), an LED (e.g., a white LED, a red LED, a green LED, or a blue LED), a transistor (a transistor which emits light depending on current), an electron emitter, a liquid crystal element, electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using a micro electro mechanical system (MEMS), a digital micromirror device (DMD), a digital micro shutter (DMS), MIRASOL (registered trademark), an interferometric modulator display (IMOD) element, a MEMS shutter display element, an optical interference type MEMS display element, an electrowetting element, a piezoelectric ceramic display, or
  • Examples of display devices having EL elements include an EL display.
  • Examples of a display device including an electron emitter include a field emission display (FED), and an SED-type flat panel display (SED: surface-conduction electron-emitter display).
  • Examples of display devices including liquid crystal elements include a liquid crystal display (e.g., a transmissive liquid crystal display, a transflective liquid crystal display, a reflective liquid crystal display, a direct-view liquid crystal display, or a projection liquid crystal display).
  • Display devices having electronic ink or electrophoretic elements include electronic paper and the like.
  • some of or all of pixel electrodes function as reflective electrodes.
  • some or all of pixel electrodes are formed to contain aluminum, silver, or the like.
  • a memory circuit such as an SRAM can be provided under the reflective electrodes, leading to lower power consumption.
  • the touch panel 300 includes a light-blocking layer 367BM on the counter substrate 370.
  • the light-blocking layer 367BM is provided so as to surround the coloring layer (e.g., the coloring layer 367R).
  • the touch panel 300 includes an anti-reflective layer 367p positioned in a region overlapping with the display portion 301.
  • an anti-reflective layer 367p a circular polarizing plate can be used, for example.
  • the touch panel 300 includes an insulating film 321.
  • the insulating film 321 covers the transistor 302t. Note that the insulating film 321 can be used as a layer for planarizing unevenness caused by the pixel circuits. An insulating film on which a layer that can prevent diffusion of impurities to the transistor 302t and the like is stacked can be used as the insulating film 321.
  • the touch panel 300 includes the light-emitting elements (e.g., the light-emitting element 350R) over the insulating film 321.
  • the light-emitting elements e.g., the light-emitting element 350R
  • the touch panel 300 includes, over the insulating film 321, a partition 328 that overlaps with an end portion of the lower electrode 351R (see FIG. 28C). In addition, a spacer 329 that controls the distance between the substrate 310 and the counter substrate 370 is provided on the partition 328.
  • the image signal line driver circuit 303s(l) includes a transistor 303t and a capacitor 303c. Note that the driver circuit can be formed in the same process and over the same substrate as those of the pixel circuits. As illustrated in FIG. 28B, the transistor 303t may include a second gate over the insulating film 321. The second gate may be electrically connected to a gate of the transistor 303t, or different potentials may be supplied thereto. The second gate may be provided in a transistor 308t described below, the transistor 302t, or the like if necessary.
  • the imaging pixels 308 each include a photoelectric conversion element 308p and an imaging pixel circuit for sensing light received by the photoelectric conversion element 308p.
  • the imaging pixel circuit includes the transistor 308t.
  • a PIN photodiode can be used as the photoelectric conversion element 308p.
  • the touch panel 300 includes a wiring 311 through which a signal can be supplied.
  • the wiring 311 is provided with a terminal 319.
  • an FPC 309(1) through which a signal such as an image signal or a synchronization signal can be supplied is electrically connected to the terminal 319.
  • PWB printed wiring board
  • Transistors formed in the same process can be used as the transistor 302t, the transistor 303t, the transistor 308t, and the like.
  • Transistors of a bottom-gate type, a top-gate type, or the like can be used.
  • a gate, source, and drain of a transistor, and a wiring or an electrode included in a touch panel a single-layer structure or a stacked structure using any of metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, or an alloy containing any of these metals as its main component can be used.
  • metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, or an alloy containing any of these metals as its main component can be used.
  • silicon is preferably used as a semiconductor in which a channel of a transistor such as the transistor 302t, the transistor 303t, or the transistor 308t is formed.
  • amorphous silicon may be used as silicon, silicon having crystallinity is particularly preferable.
  • microcrystalline silicon, polycrystalline silicon, single crystal silicon, or the like is preferably used.
  • polycrystalline silicon can be formed at a lower temperature than single crystal silicon and has higher field effect mobility and higher reliability than amorphous silicon.
  • the aperture ratio of the pixel can be improved. Even in the case where pixels are included at extremely high resolution, a gate driver circuit and a source driver circuit can be formed over a substrate over which the pixels are formed, the number of components included in an electronic device can be reduced.
  • an oxide semiconductor is preferably used for semiconductor devices such as transistors used for pixels included in display regions or driver circuits in the display panel 1 10.
  • an oxide semiconductor having a wider band gap than silicon is preferably used.
  • a semiconductor material having a wider band gap and a lower carrier density than silicon is preferably used because off-state current of the transistor can be reduced.
  • the oxide semiconductor preferably contains at least indium (In) or zinc (Zn), for example. More preferably, the oxide semiconductor contains an oxide represented by an In-M-Zn-based oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf).
  • M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf.
  • an oxide semiconductor film including a plurality of crystal parts whose c-axes are aligned perpendicular to a surface on which the semiconductor layer is formed or the top surface of the semiconductor layer and in which the adjacent crystal parts have no grain boundary.
  • Such an oxide semiconductor can be preferably used for a flexible display panel which is used in a bent state, or the like.
  • Charge accumulated in a capacitor through a transistor can be held for a long time because of the low off-state current of the transistor.
  • operation of a driver circuit can be stopped while a gray scale of an image displayed on each display region is maintained. As a result, an electronic device with an extremely low power consumption can be obtained.
  • An element layer includes a display element, for example, and may include a wiring electrically connected to a display element or an element such as a transistor used in a pixel or a circuit in addition to the display element.
  • a support provided with an insulating surface over which an element layer is formed is called a base material.
  • an element layer As a method for forming an element layer over a base material provided with an insulating surface having flexibility, there are a method in which the element layer is formed directly over the base material, and a method in which the element layer is formed over a supporting base material having stiffness unlike the base material, and then the element layer is separated from the supporting base material and transferred to the base material.
  • the element layer be formed directly over the base material, in which case a manufacturing process can be simplified.
  • the element layer is preferably formed in a state where the base material is fixed to the supporting base material, in which case transfer of the element layer in a device and between devices can be easy.
  • a separation layer and an insulating layer are stacked over a supporting base material, and then the element layer is formed over the insulating layer. Then, the element layer is separated from the supporting base material and then transferred to the base material. At this time, a material is selected so that separation at an interface between the supporting base material and the separation layer, at an interface between the separation layer and the insulating layer, or in the separation layer occurs.
  • a stacked layer of a layer including a high-melting-point metal material, such as tungsten, and a layer including an oxide of the metal material be used as the separation layer, and a stacked layer of a plurality of layers, such as a silicon nitride layer and a silicon oxynitride layer be used over the separation layer.
  • a high-melting-point metal material such as tungsten
  • a stacked layer of a plurality of layers such as a silicon nitride layer and a silicon oxynitride layer
  • the separation may be performed by application of mechanical power, by etching of the separation layer, by dripping of a liquid into part of the separation interface to penetrate the entire separation interface, or the like.
  • separation may be performed by heating the separation interface by utilizing a difference in coefficient of thermal expansion.
  • the peeling layer is not necessarily provided in the case where peeling can occur at an interface between the supporting base material and the insulating layer.
  • glass may be used as the supporting base material
  • an organic resin such as polyimide may be used as the insulating layer
  • a separation trigger may be formed by locally heating part of the organic resin by laser light or the like, and peeling may be performed at an interface between the glass and the insulating layer.
  • a metal layer may be provided between the supporting base material and the insulating layer formed of an organic resin, and separation may be performed at the interface between the metal layer and the insulating layer by heating the metal layer by feeding a current to the metal layer.
  • the insulating layer formed of an organic resin can be used as a base material.
  • polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), a polyacrylonitrile resin, a polyimide resin, a polymethyl methacrylate resin, a polycarbonate (PC) resin, a polyethersulfone (PES) resin, a polyamide resin, a cycloolefin resin, a polystyrene resin, a polyamide imide resin, and a polyvinyl chloride resin.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PES polyethersulfone
  • a material whose thermal expansion coefficient is low for example, lower than or equal to 30 x 10 ⁇ 6 /K is preferable, and a polyamide imide resin, a polyimide resin, or PET can be suitably used.
  • a substrate in which a fibrous body is impregnated with a resin (also referred to as prepreg) or a substrate whose thermal expansion coefficient is reduced by mixing an inorganic filler with an organic resin can also be used.
  • a high-strength fiber of an organic compound or an inorganic compound is used as the fibrous body.
  • the high-strength fiber is specifically a fiber with a high tensile modulus of elasticity or a fiber with a high Young's modulus.
  • Typical examples thereof include a polyvinyl alcohol based fiber, a polyester based fiber, a polyamide based fiber, a polyethylene based fiber, an aramid based fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbon fiber.
  • glass fiber glass fiber using E glass, S glass, D glass, Q glass, or the like can be used.
  • These fibers may be used in a state of a woven fabric or a nonwoven fabric, and a structure body in which this fibrous body is impregnated with a resin and the resin is cured may be used as the flexible substrate.
  • the structure body including the fibrous body and the resin is preferably used as the flexible substrate, in which case the reliability against bending or breaking due to local pressure can be increased.
  • an active matrix method in which an active element is included in a pixel or a passive matrix method in which an active element is not included in a pixel can be used.
  • an active element not only a transistor but also various active elements (non-linear elements) can be used.
  • a metal insulator metal (MIM), a thin film diode (TFD), or the like can also be used. Since such an element has a small number of manufacturing steps, manufacturing cost can be reduced or yield can be improved. Alternatively, since the size of the element is small, the aperture ratio can be improved, so that power consumption can be reduced or higher luminance can be achieved.
  • the passive matrix method in which an active element (a non-linear element) is not used can also be used. Since an active element (a non-linear element) is not used, the number of manufacturing steps is small, so that manufacturing cost can be reduced or the yield can be improved. Alternatively, since an active element (a non-linear element) is not used, the aperture ratio can be improved, so that power consumption can be reduced or higher luminance can be achieved, for example.
  • This embodiment is obtained by performing change, addition, modification, removal, application, superordinate conceptualization, or subordinate conceptualization on part or the whole of another embodiment.
  • part or the whole of this embodiment can be freely combined with, applied to, or replaced with part or the whole of another embodiment.
  • FIGS. 29A to 29C a structure of a foldable touch panel that can be used in the electronic device of one embodiment of the present invention will be described with reference to FIGS. 29A to 29C.
  • FIGS. 29A to 29C are cross-sectional views of a touch panel 500.
  • the touch panel 500 includes a display portion 501 and a touch sensor 595. Furthermore, the touch panel 500 includes a substrate 510, a substrate 570, and a substrate 590. Note that the substrate 510, the substrate 570, and the substrate 590 each have flexibility.
  • the display portion 501 includes the substrate 510, a plurality of pixels over the substrate 510, and a plurality of wirings 511 through which signals are supplied to the pixels.
  • the plurality of wirings 511 is led to a peripheral portion of the substrate 510, and part of the plurality of wirings 511 forms a terminal 519.
  • the terminal 519 is electrically connected to an FPC 509(1).
  • the substrate 590 includes the touch sensor 595 and a plurality of wirings 598 electrically connected to the touch sensor 595.
  • the plurality of wirings 598 is led to a peripheral portion of the substrate 590, and part of the plurality of wirings 598 forms a terminal.
  • the terminal is electrically connected to an FPC 509(2).
  • a capacitive touch sensor can be used as the touch sensor 595.
  • Examples of the capacitive touch sensor are a surface capacitive touch sensor and a projected capacitive touch sensor.
  • Examples of the projected capacitive touch sensor are a self capacitive touch sensor and a mutual capacitive touch sensor, which differ mainly in the driving method.
  • the use of a mutual capacitive touch sensor is preferable because multiple points can be sensed simultaneously.
  • a variety of sensors that can sense the closeness or the contact of a sensing target, such as a finger, can be used.
  • the projected capacitive touch sensor 595 includes electrodes 591 and electrodes 592.
  • the electrodes 591 are electrically connected to any of the plurality of wirings 598, and the electrodes 592 are electrically connected to any of the other wirings 598.
  • a wiring 594 electrically connects two electrodes 591 between which the electrode 592 is positioned.
  • the intersecting area of the electrode 592 and the wiring 594 is preferably as small as possible.
  • Such a structure allows a reduction in the area of a region where the electrodes are not provided, reducing unevenness in transmittance. As a result, unevenness in luminance of light from the touch sensor 595 can be reduced.
  • the shapes of the electrodes 591 and the electrodes 592 can be any of a variety of shapes.
  • the plurality of electrodes 591 may be provided so that a space between the electrodes 591 is reduced as much as possible, and a plurality of electrodes 592 may be provided with an insulating layer sandwiched between the electrodes 591 and the electrodes 592 and may be spaced apart from each other to form a region not overlapping with the electrodes 591.
  • a dummy electrode which is electrically insulated from these electrodes, whereby the area of a region having a different transmittance can be reduced.
  • the touch sensor 595 includes the substrate 590, the electrodes 591 and the electrodes 592 provided in a staggered arrangement on the substrate 590, an insulating layer 593 covering the electrodes 591 and the electrodes 592, and the wiring 594 that electrically connects the adjacent electrodes 591 to each other.
  • An adhesive layer 597 attaches the substrate 590 to the substrate 570 so that the touch sensor 595 overlaps with the display portion 501.
  • the electrodes 591 and the electrodes 592 are formed using a light-transmitting conductive material.
  • a light-transmitting conductive material a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added, or graphene can be used.
  • the electrodes 591 and the electrodes 592 may be formed by depositing a light-transmitting conductive material on the substrate 590 by a sputtering method and then removing an unnecessary portion by any of various patterning techniques such as photolithography.
  • Graphene may be formed in such a manner that a solution in which graphene oxide is dispersed is applied and reduced, in addition to a CVD method.
  • Examples of a material for the insulating layer 593 are a resin such as acrylic or epoxy resin, a resin having a siloxane bond, and an inorganic insulating material such as silicon oxide, silicon oxynitride, or aluminum oxide.
  • openings reaching the electrodes 591 are formed in the insulating layer 593, and the wiring 594 electrically connects the adjacent electrodes 591.
  • a light-transmitting conductive material can be favorably used as the wiring 594 because the aperture ratio of the touch panel can be increased.
  • a material with higher conductivity than the conductivities of the electrodes 591 and 592 can be favorably used as the wiring 594 because electric resistance can be reduced.
  • One electrode 592 extends in one direction, and a plurality of electrodes 592 is provided in the form of stripes.
  • the wiring 594 intersects with the electrode 592.
  • Adjacent electrodes 591 are provided with one electrode 592 provided therebetween.
  • the wiring 594 electrically connects the adjacent electrodes 591.
  • the plurality of electrodes 591 is not necessarily arranged in the direction orthogonal to one electrode 592 and may be arranged to intersect with one electrode 592 at an angle of less than 90 degrees.
  • One wiring 598 is electrically connected to any of the electrodes 591 and 592. Part of the wiring 598 serves as a terminal.
  • a metal material such as aluminum, gold, platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium or an alloy material containing any of these metal materials can be used.
  • 594 may be provided to protect the touch sensor 595.
  • connection layer 599 electrically connects the wiring 598 to the FPC 509(2).
  • connection layer 599 any of anisotropic conductive films (ACF), anisotropic conductive pastes (ACP), and the like can be used.
  • ACF anisotropic conductive films
  • ACP anisotropic conductive pastes
  • the adhesive layer 597 has a light-transmitting property.
  • a thermosetting resin or an ultraviolet curable resin can be used; specifically, a resin such as an acrylic resin, an urethane resin, an epoxy resin, or a resin having a siloxane bond can be used.
  • the display portion 501 includes a plurality of pixels arranged in a matrix.
  • Each of the pixels includes a display element and a pixel circuit for driving the display element.
  • organic electroluminescent element that emits white light as a display element
  • the display element is not limited to such element.
  • Organic electroluminescent elements for different colors for example, an organic electroluminescent element for red, an organic electroluminescent element for blue, and an organic electroluminescent element for green may be used.
  • any of various display elements such as display elements (electronic ink) that perform display by an electrophoretic method, an electronic liquid powder method, or the like; MEMS shutter display elements; and optical interference type MEMS display elements can be used.
  • a structure suitable for employed display elements can be selected from among a variety of structures of pixel circuits.
  • the substrate 510 is a stacked body in which a flexible substrate 510b, a barrier film 510a that prevents diffusion of unintentional impurities to light-emitting elements, and an adhesive layer 510c that attaches the barrier film 510a to the substrate 510b are stacked.
  • the substrate 570 is a stacked body in which a flexible substrate 570b, a barrier film 570a that prevents diffusion of unintentional impurities to the light-emitting elements, and an adhesive layer 570c that attaches the barrier film 570a to the substrate 570b are stacked.
  • a sealant 560 attaches the substrate 570 to the substrate 510.
  • the sealant 560 has a refractive index higher than that of air. In the case of extracting light to the sealant 560 side, the sealant 560 serves as an optical adhesive layer.
  • the pixel circuits and the light-emitting elements are provided between the substrate 510 and the substrate 570.
  • a pixel includes a sub-pixel 502R, and the sub-pixel 502R includes a light-emitting module 580R.
  • the sub-pixel 502R includes the light-emitting element 550R and the pixel circuit that can supply electric power to the light-emitting element 550R and includes a transistor 502t. Furthermore, the light-emitting module 580R includes the light-emitting element 550R and an optical element (e.g., a coloring layer 567R).
  • an optical element e.g., a coloring layer 567R
  • the light-emitting element 550R includes a lower electrode, an upper electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode.
  • the light-emitting module 580R includes the coloring layer 567R on the light extraction side.
  • the coloring layer transmits light of a particular wavelength and is, for example, a layer that selectively transmits light of red, green, or blue color. Note that in another sub-pixel, a region that transmits light emitted from the light-emitting element as it is may be provided as well.
  • the sealant 560 is provided on the light extraction side, the sealant 560 is in contact with the light-emitting element 550R and the coloring layer 567R.
  • the coloring layer 567R is positioned in a region overlapping with the light-emitting element 550R. Accordingly, part of light emitted from the light-emitting element 550R passes through the coloring layer 567R and is emitted to the outside of the light-emitting module 580R as indicated by an arrow in FIG. 29 A.
  • the display portion 501 includes a light-blocking layer 567BM on the light extraction side.
  • the light-blocking layer 567BM is provided so as to surround the coloring layer (e.g., the coloring layer 567R).
  • the display portion 501 includes an anti -reflective layer 567p positioned in a region overlapping with pixels.
  • an anti -reflective layer 567p a circular polarizing plate can be used, for example.
  • the display portion 501 includes an insulating film 521.
  • the insulating film 521 covers the transistor 502t.
  • the insulating film 521 can be used as a layer for planarizing unevenness caused by the pixel circuits.
  • a stacked film including a layer that can prevent diffusion of impurities can be used as the insulating film 521. This can prevent the reliability of the transistor 502t or the like from being lowered by diffusion of unintentional impurities.
  • the display portion 501 includes the light-emitting elements (e.g., the light-emitting element 550R) over the insulating film 521.
  • the light-emitting elements e.g., the light-emitting element 550R
  • the display portion 501 includes, over the insulating film 521, a partition 528 that overlaps with an end portion of a lower electrode.
  • a spacer that controls the distance between the substrate 510 and the substrate 570 is provided on the partition 528.
  • a scan line driver circuit 503g(l) includes a transistor 503t and a capacitor 503c. Note that the driver circuit can be formed in the same process and over the same substrate as those of the pixel circuits.
  • the display portion 501 includes the wirings 511 through which signals can be supplied.
  • the wirings 511 are provided with the terminal 519.
  • the FPC 509(1) through which a signal such as an image signal or a synchronization signal can be supplied is electrically connected to the terminal 519.
  • PWB printed wiring board
  • any of various kinds of transistors can be used in the display portion 501.
  • FIGS. 29 A and 29B A structure in the case of using bottom-gate transistors in the display portion 501 is illustrated in FIGS. 29 A and 29B.
  • a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like can be used in the transistor 502t and the transistor 503t illustrated in FIG. 29A.
  • a semiconductor layer containing polycrystalline silicon or the like can be used in the transistor 502t and the transistor 503t illustrated in FIG. 29B.
  • FIG. 29C A structure in the case of using top-gate transistors in the display portion 501 is illustrated in FIG. 29C.
  • a semiconductor layer containing polycrystalline silicon, a transferred single crystal silicon film, or the like can be used in the transistor 502t and the transistor 503t illustrated in FIG. 29C.
  • This embodiment is obtained by performing change, addition, modification, removal, application, superordinate conceptualization, or subordinate conceptualization on part or the whole of another embodiment.
  • part or the whole of this embodiment can be freely combined with, applied to, or replaced with part or the whole of another embodiment.
  • FIGS. 30A to 30C a structure of a foldable touch panel that can be used in the electronic device of one embodiment of the present invention will be described with reference to FIGS. 30A to 30C.
  • FIGS. 30A to 30C are cross-sectional views of a touch panel 500B.
  • the touch panel 500B described in this embodiment is different from the touch panel 500 described in Embodiment 6 in that the display portion 501 displays received image data to the side where the transistors are provided and that the touch sensor is provided on the substrate 510 side of the display portion.
  • Different structures will be described in detail below, and the above description is referred to for the other similar structures.
  • the display portion 501 includes a plurality of pixels arranged in a matrix. Each of the pixels includes a display element and a pixel circuit for driving the display element.
  • a pixel includes the sub -pixel 502R, and the sub -pixel 502R includes a light-emitting module 580R.
  • the sub-pixel 502R includes the light-emitting element 550R and the pixel circuit that can supply electric power to the light-emitting element 550R and includes the transistor 502t.
  • the light-emitting module 580R includes the light-emitting element 550R and an optical element (e.g., the coloring layer 567R).
  • the light-emitting element 550R includes a lower electrode, an upper electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode.
  • the light-emitting module 580R includes the coloring layer 567R on the light extraction side.
  • the coloring layer transmits light of a particular wavelength and is, for example, a layer that selectively transmits light of red, green, or blue color. Note that in another sub-pixel, a region that transmits light emitted from the light-emitting element as it is may be provided as well.
  • the coloring layer 567R is positioned in a region overlapping with the light-emitting element 550R.
  • the light-emitting element 550R illustrated in FIG. 30A emits light to the side where the transistor 502t is provided. Accordingly, part of light emitted from the light-emitting element 550R passes through the coloring layer 567R and is emitted to the outside of the light-emitting module 580R as indicated by an arrow in FIG. 3 OA.
  • the display portion 501 includes a light-blocking layer 567BM on the light extraction side.
  • the light-blocking layer 567BM is provided so as to surround the coloring layer (e.g., the coloring layer 567R).
  • the display portion 501 includes the insulating film 521.
  • the insulating film 521 is the insulating film 521.
  • the insulating film 521 covers the transistor 502t.
  • the insulating film 521 can be used as a layer for planarizing unevenness caused by the pixel circuits.
  • a stacked film including a layer that can prevent diffusion of impurities can be used as the insulating film 521. This can prevent the reliability of the transistor 502t or the like from being lowered by diffusion of unintentional impurities from the coloring layer 567R.
  • the touch sensor 595 is provided on the substrate 510 side of the display portion 501 (see FIG. 30A).
  • the adhesive layer 597 is provided between the substrate 510 and the substrate 590 and attaches the touch sensor 595 to the display portion 501.
  • any of various kinds of transistors can be used in the display portion 501.
  • FIGS. 3 OA and 30B A structure in the case of using bottom-gate transistors in the display portion 501 is illustrated in FIGS. 3 OA and 30B.
  • a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like can be used in the transistor 502t and the transistor 503t illustrated in FIG. 3 OA.
  • a semiconductor layer containing polycrystalline silicon or the like can be used in the transistor 502t and the transistor 503t illustrated in FIG. 30B.
  • FIG. 30C A structure in the case of using top-gate transistors in the display portion 501 is illustrated in FIG. 30C.
  • a semiconductor layer containing polycrystalline silicon, a transferred single crystal silicon film, or the like can be used in the transistor 502t and the transistor 503t illustrated in FIG. 30C.
  • This embodiment is obtained by performing change, addition, modification, removal, application, superordinate conceptualization, or subordinate conceptualization on part or the whole of another embodiment.
  • part or the whole of this embodiment can be freely combined with, applied to, or replaced with part or the whole of another embodiment.
  • An oxide semiconductor has a wide energy gap of 3.0 eV or more.
  • a transistor including an oxide semiconductor film obtained by processing of the oxide semiconductor in an appropriate condition and a sufficient reduction in carrier density of the oxide semiconductor can have much lower leakage current between a source and a drain in an off state (off-state current) than a conventional transistor including silicon.
  • An applicable oxide semiconductor preferably contains at least indium (In) or zinc (Zn).
  • In and Zn are preferably contained.
  • a stabilizer for reducing variation in electrical characteristics of the transistor using the oxide semiconductor one or more selected from gallium (Ga), tin (Sn), hafnium (Hf), zirconium (Zr), titanium (Ti), scandium (Sc), yttrium (Y), and an lanthanoid (e.g., cerium (Ce), neodymium (Nd), or gadolinium (Gd)) is preferably contained.
  • In-Al-Zn-based oxide an In-Sn-Zn-based oxide, a Sn-Ga-Zn-based oxide, an
  • Al-Ga-Zn-based oxide a Sn-Al-Zn-based oxide, an In-Hf-Zn-based oxide, an In-Zr-Zn-based oxide, an In-Ti-Zn-based oxide, an In-Sc-Zn-based oxide, an
  • In-Y-Zn-based oxide an In-La-Zn-based oxide, an In-Ce-Zn-based oxide, an
  • In-Pr-Zn-based oxide an In-Nd-Zn-based oxide, an In-Sm-Zn-based oxide, an
  • In-Eu-Zn-based oxide an In-Gd-Zn-based oxide, an In-Tb-Zn-based oxide, an
  • In-Dy-Zn-based oxide an In-Ho-Zn-based oxide, an In-Er-Zn-based oxide, an In-Tm-Zn-based oxide, an In-Yb-Zn-based oxide, an In-Lu-Zn-based oxide, an
  • In-Sn-Ga-Zn-based oxide an In-Hf-Ga-Zn-based oxide, an In-Al-Ga-Zn-based oxide, an In-Sn-Al-Zn-based oxide, an In-Sn-Hf-Zn-based oxide, or an In-Hf-Al-Zn-based oxide.
  • an "In-Ga-Zn-based oxide” means an oxide containing In, Ga, and Zn as its main components and there is no particular limitation on the ratio of In:Ga:Zn.
  • the In-Ga-Zn-based oxide may contain a metal element other than the In, Ga, and Zn.
  • a material represented by In 0 3 (ZnO) m (m > 0 is satisfied, and m is not an integer) may be used as an oxide semiconductor.
  • M represents one or more metal elements selected from Ga, Fe, Mn, and Co, or the above-described element as a stabilizer.
  • the oxide semiconductor a material expressed by a chemical formula, In 2 Sn0 5 (ZnO) grip (n > 0, n is an integer) may be used.
  • the oxide semiconductor film contains a large amount of hydrogen, the hydrogen and the oxide semiconductor are bonded to each other, so that part of the hydrogen serves as a donor and causes generation of an electron that is a carrier. As a result, the threshold voltage of the transistor shifts in the negative direction. Therefore, it is preferable that, after formation of the oxide semiconductor film, dehydration treatment (dehydrogenation treatment) be performed to remove hydrogen or moisture from the oxide semiconductor film so that the oxide semiconductor film is highly purified to contain impurities as little as possible.
  • dehydration treatment dehydrogenation treatment
  • oxygen in the oxide semiconductor film is also reduced by the dehydration treatment (dehydrogenation treatment) in some cases. Therefore, it is preferable that oxygen be added to the oxide semiconductor film to fill oxygen vacancies increased by the dehydration treatment (dehydrogenation treatment).
  • supplying oxygen to an oxide semiconductor film may be expressed as oxygen adding treatment, or treatment for making the oxygen content of an oxide semiconductor film be in excess of that of the stoichiometric composition may be expressed as treatment for making an oxygen-excess state.
  • the oxide semiconductor film can be an i-type (intrinsic) oxide semiconductor film or an oxide semiconductor film extremely close to an i-type oxide semiconductor (a substantially i-type oxide semiconductor).
  • substantially intrinsic means that the oxide semiconductor film includes extremely few (close to zero) carriers derived from a donor, and the carrier concentration thereof is lower than or equal to 1 x 10 17 /cm 3 , lower than or equal to 1 x 10 16 /cm 3 , lower than or equal to 1 x 10 15 /cm 3 , lower than or equal to 1 x 10 14 /cm 3 , lower than or equal to 1 x 10 13 /cm 3 , particularly preferably lower than or equal to 8 x 10 11 /cm 3 , still further preferably lower than or equal to 1 x 10 11 /cm 3 , yet further preferably lower than or equal to 1 x 10 10 /cm 3 , and is higher than or equal to 1 x 10 "9 /cm 3 .
  • the transistor including an i-type or substantially i-type oxide semiconductor film can have extremely favorable off-state current characteristics.
  • the drain current at the time when the transistor including an oxide semiconductor film is in an off-state at room temperature (25 °C) can be less than or equal to 1 x 10 ⁇ 18 A, preferably less than or equal to 1 x 10 ⁇ 21 A, further preferably less than or equal to 1 x 10 ⁇ 24 A; or at 85 °C, less than or equal to 1 x 10 ⁇ 15 A, preferably less than or equal to 1 x 10 ⁇ 18 A, further preferably less than or equal to 1 x 10 ⁇ 21 A.
  • An off state of a transistor refers to a state where gate voltage is lower than the threshold voltage in an n-channel transistor. Specifically, the transistor is in an off state when the gate voltage is lower than the threshold voltage by 1 V or more, 2 V or more, or 3 V or more. Note that these current values are values when the voltage between a source and a drain is, for example, 1 V, 5 V, or 10 V.
  • a structure of the oxide semiconductor film is described below.
  • An oxide semiconductor film is classified roughly into a single-crystal oxide semiconductor film and a non-single-crystal oxide semiconductor film.
  • the non-single-crystal oxide semiconductor film includes any of a c-axis aligned crystalline oxide semiconductor (CAAC-OS) film, a polycrystalline oxide semiconductor film, a microcrystalline oxide semiconductor film, an amorphous oxide semiconductor film, and the like.
  • CAAC-OS c-axis aligned crystalline oxide semiconductor
  • CAAC-OS can be referred to as an oxide semiconductor including c-axis aligned nanocrystals (CANC).
  • CANC c-axis aligned nanocrystals
  • the CAAC-OS film is an oxide semiconductor film including a plurality of c-axis aligned crystal parts.
  • TEM transmission electron microscope
  • metal atoms are arranged in a layered manner in the crystal parts.
  • Each metal atom layer reflects unevenness of a surface over which the CAAC-OS film is formed (hereinafter, such a surface is referred to as a formation surface) or a top surface of the CAAC-OS film, and is arranged parallel to the formation surface or the top surface of the CAAC-OS film.
  • metal atoms are arranged in a triangular or hexagonal configuration in the crystal parts.
  • FIG. 31 A is a cross-sectional TEM image of a CAAC-OS film.
  • FIG. 3 IB is a cross-sectional TEM image obtained by enlarging the image of FIG. 31 A. In FIG. 3 IB, atomic arrangement is highlighted for easy understanding.
  • FIG. 31C is Fourier transform images of regions each surrounded by a circle (the diameter is approximately 4 nm) between A and O and between O and A' in FIG. 31 A. C-axis alignment can be observed in each region in FIG. 31C.
  • the c-axis direction between A and O is different from that between O and A', which indicates that a grain in the region between A and O is different from that between O and A'.
  • the angle of the c-axis continuously and gradually changes from 14.3°, 16.6°, to 26.4°.
  • the angle of the c-axis continuously changes from -18.3°, -17.6°, to -15.9°.
  • spots (luminescent spots) having alignment are shown.
  • spots are observed in an electron diffraction pattern (also referred to as a nanobeam electron diffraction pattern) of the top surface of the CAAC-OS film which is obtained using an electron beam with a diameter of, for example, larger than or equal to 1 nm and smaller than or equal to 30 nm (see FIG. 32A).
  • crystal parts included in the CAAC-OS film each fit into a cube whose one side is less than 100 nm.
  • a crystal part included in the CAAC-OS film fits into a cube whose one side is less than 10 nm, less than 5 nm, or less than 3 nm.
  • one large crystal region is formed in some cases. For example, a crystal region with an area of larger than or equal to 2500 nm 2 , larger than or equal to 5 ⁇ 2 , or larger than or equal to 1000 ⁇ 2 is observed in some cases in the planar TEM image.
  • the CAAC-OS film is subjected to structural analysis with an X-ray diffraction
  • each metal atom layer which is arranged in a layered manner and observed in the cross-sectional TEM image corresponds to a plane parallel to the a-b plane of the crystal.
  • CAAC-OS film or is formed through crystallization treatment such as heat treatment.
  • the c-axis of the crystal is aligned in a direction parallel to a normal vector of a formation surface or a normal vector of a top surface of the CAAC-OS film.
  • the c-axis might not be necessarily parallel to a normal vector of a formation surface or a normal vector of a top surface of the CAAC-OS film.
  • distribution of c-axis aligned crystal parts in the CAAC-OS film is not necessarily uniform.
  • the proportion of the c-axis aligned crystal parts in the vicinity of the top surface is higher than that in the vicinity of the formation surface in some cases.
  • an impurity is added to the CAAC-OS film, a region to which the impurity is added is altered, and the proportion of the c-axis aligned crystal parts in the CAAC-OS film varies depending on regions, in some cases.
  • a peak may also be observed at 2 ⁇ of around 36°, in addition to the peak at 2 ⁇ oi around 31°.
  • the peak at 2 ⁇ oi around 36° indicates that a crystal having no c-axis alignment is included in part of the CAAC-OS film. It is preferable that in the CAAC-OS film, a peak appear at 2 ⁇ ⁇ around 31° and a peak do not appear at 20 of around 36°.
  • the CAAC-OS film is an oxide semiconductor film having low impurity concentration.
  • the impurity is an element other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, or a transition metal element.
  • an element that has higher bonding strength to oxygen than a metal element included in the oxide semiconductor film, such as silicon disturbs the atomic order of the oxide semiconductor film by depriving the oxide semiconductor film of oxygen and causes a decrease in crystallinity.
  • a heavy metal such as iron or nickel, argon, carbon dioxide, or the like has a large atomic radius (molecular radius), and thus disturbs the atomic order of the oxide semiconductor film and causes a decrease in crystallinity when it is contained in the oxide semiconductor film.
  • the impurity contained in the oxide semiconductor film might serve as a carrier trap or a carrier generation source.
  • the CAAC-OS film is an oxide semiconductor film having a low density of defect states.
  • oxygen vacancies in the oxide semiconductor film serve as carrier traps or serve as carrier generation sources when hydrogen is captured therein.
  • the state in which impurity concentration is low and density of defect states is low (the number of oxygen vacancies is small) is referred to as a "highly purified intrinsic” or “substantially highly purified intrinsic” state.
  • a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has few carrier generation sources, and thus can have a low carrier density.
  • a transistor including the oxide semiconductor film rarely has a negative threshold voltage (is rarely normally on).
  • the highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has few carrier traps. Accordingly, the transistor including the oxide semiconductor film has little variation in electrical characteristics and high reliability. Electric charge trapped by the carrier traps in the oxide semiconductor film takes a long time to be released, and might behave like fixed electric charge.
  • the transistor which includes the oxide semiconductor film having high impurity concentration and a high density of defect states has unstable electrical characteristics in some cases.
  • an OS transistor including the CAAC-OS film changes in electrical characteristics of the transistor due to irradiation with visible light or ultraviolet light are small.
  • the size of a crystal part included in the microcrystalline oxide semiconductor film is greater than or equal to 1 nm and less than or equal to 100 nm, or greater than or equal to 1 nm and less than or equal to 10 nm.
  • a microcrystal with a size greater than or equal to 1 nm and less than or equal to 10 nm, or a size greater than or equal to 1 nm and less than or equal to 3 nm is specifically referred to as nanocrystal (nc).
  • An oxide semiconductor film including nanocrystal is referred to as an nc-OS (nanocrystalline oxide semiconductor) film.
  • nc-OS can also be referred to as an oxide semiconductor including random aligned nanocrystals (RANC) or an oxide semiconductor including non-aligned nanocrystals (NANC).
  • RNC random aligned nanocrystals
  • NANC non-aligned nanocrystals
  • nc-OS film In the nc-OS film, a microscopic region (e.g., a region with a size greater than or equal to 1 nm and less than or equal to 10 nm, in particular, a region with a size greater than or equal to 1 nm and less than or equal to 3 nm) has a periodic atomic order.
  • the nc-OS film does not have regularity of crystal orientation between different crystal parts. Thus, the orientation of the whole film is not observed. Accordingly, in some cases, the nc-OS film cannot be distinguished from an amorphous oxide semiconductor film depending on an analysis method.
  • nc-OS film when the nc-OS film is subjected to structural analysis by an out-of-plane method with an XRD apparatus using an X-ray having a diameter larger than that of a crystal part, a peak that shows a crystal plane does not appear. Furthermore, a halo pattern is shown in an electron diffraction pattern (also referred to as a selected-area electron diffraction pattern) of the nc-OS film obtained by using an electron beam having a probe diameter (e.g., larger than or equal to 50 nm) larger than the diameter of a crystal part.
  • a probe diameter e.g., larger than or equal to 50 nm
  • spots are shown in a nanobeam electron diffraction pattern of the nc-OS film obtained by using an electron beam having a probe diameter close to, or smaller than the diameter of a crystal part. Furthermore, in a nanobeam electron diffraction pattern of the nc-OS film, regions with high luminance in a circular (ring) pattern are shown in some cases. Also in a nanobeam electron diffraction pattern of the nc-OS film, a plurality of spots are shown in a ring-like region in some cases (see FIG. 32B).
  • the nc-OS film is an oxide semiconductor film having more regularity than the amorphous oxide semiconductor film, the nc-OS film has a lower density of defect states than the amorphous oxide semiconductor film. However, there is no regularity of crystal orientation between different crystal parts in the nc-OS film; hence, the nc-OS film has a higher density of defect states than the CAAC-OS film.
  • an oxide semiconductor film may be a stacked film including two or more films of an amorphous oxide semiconductor film, a microcrystalline oxide semiconductor film, and a CAAC-OS film, for example.
  • the structures can be analyzed using nanobeam electron diffraction in some cases.
  • FIG. 32C illustrates a transmission electron diffraction measurement apparatus that includes an electron gun chamber 10, an optical system 12 below the electron gun chamber 10, a sample chamber 14 below the optical system 12, an optical system 16 below the sample chamber 14, an observation chamber 20 below the optical system 16, a camera 18 installed in the observation chamber 20, and a film chamber 22 below the observation chamber 20.
  • the camera 18 is provided to face the inside of the observation chamber 20. Note that the film chamber 22 is not necessarily provided.
  • FIG. 32D illustrates an internal structure of the transmission electron diffraction measurement apparatus illustrated in FIG. 32C.
  • a substance 28 provided in the sample chamber 14 is irradiated with electrons ejected from an electron gun provided in the electron gun chamber 10 through the optical system 12.
  • the electrons that have passed through the substance 28 enter a fluorescent plate 32 provided in the observation chamber 20 through the optical system 16.
  • a pattern corresponding to the intensity of entered electron appears, which allows measurement of a transmission electron diffraction pattern.
  • the camera 18 is set toward the fluorescent plate 32 so that a pattern on the fluorescent plate 32 can be taken.
  • An angle formed by a straight line that passes through the center of a lens of the camera 18 and the center of the fluorescent plate 32 and an upper surface of the fluorescent plate 32 is, for example, 15° or more and 80° or less, 30° or more and 75° or less, or 45° or more and 70° or less.
  • the film chamber 22 may be provided with the camera 18.
  • the camera 18 may be set in the film chamber 22 so as to be opposite to the incident direction of electrons 24. In this case, a transmission electron diffraction pattern with less distortion can be taken from the rear surface of the fluorescent plate 32.
  • a holder for fixing the substance 28 that is a sample is provided in the sample chamber 14.
  • the holder transmits electrons passing through the substance 28.
  • the holder may have, for example, a function of moving the substance 28 in the direction of the X, Y, and Z axes.
  • the movement function of the holder may have an accuracy of moving the substance in the range of, for example, 1 nm to 10 nm, 5 nm to 50 nm, 10 nm to 100 nm, 50 nm to 500 nm, and 100 nm to 1 ⁇ .
  • the range is preferably determined to be an optimal range for the structure of the substance 28.
  • changes in the structure of a substance can be observed by changing (scanning) the irradiation position of the electrons 24 that are a nanobeam in the substance, as illustrated in FIG. 32D.
  • the substance 28 is a CAAC-OS film
  • a diffraction pattern shown in FIG. 32A can be observed.
  • the substance 28 is an nc-OS film
  • a diffraction pattern shown in FIG. 32B can be observed.
  • a CAAC-OS film is favorable can be determined by the proportion of a region where a diffraction pattern of a CAAC-OS film is observed in a predetermined area (also referred to as proportion of CAAC).
  • proportion of CAAC is higher than or equal to 50 %, preferably higher than or equal to 80 %, further preferably higher than or equal to 90 %, still further preferably higher than or equal to 95 %.
  • proportion of non-CAAC a proportion of a region where a diffraction pattern different from that of a CAAC-OS film.
  • transmission electron diffraction patterns were obtained by scanning a top surface of a sample including a CAAC-OS film obtained just after deposition (represented as "as-sputtered") and a top surface of a sample including a CAAC-OS subjected to heat treatment at 450 °C in an atmosphere containing oxygen.
  • the proportion of CAAC was obtained in such a manner that diffraction patterns were observed by scanning for 60 seconds at a rate of 5 nm/second and the obtained diffraction patterns were converted into still images every 0.5 seconds.
  • an electron beam a nanobeam with a probe diameter of 1 nm was used. The above measurement was performed on six samples. The proportion of CAAC was calculated using the average value of the six samples.
  • FIG. 33A shows the proportion of CAAC in each sample.
  • the proportion of CAAC of the CAAC-OS film obtained just after the deposition was 75.7 % (the proportion of non-CAAC was 24.3 %).
  • the proportion of CAAC of the CAAC-OS film subjected to the heat treatment at 450 °C was 85.3 % (the proportion of non-CAAC was 14.7 %).
  • FIGS. 33B and 33C are planar TEM images of the CAAC-OS film obtained just after the deposition and the CAAC-OS film subjected to the heat treatment at 450 °C, respectively. Comparison between FIGS. 33B and 33C shows that the CAAC-OS film subjected to the heat treatment at 450 °C has more uniform film quality. That is, the heat treatment at a high temperature improves the film quality of the CAAC-OS film.
  • the structure of an oxide semiconductor film having a plurality of structures can be analyzed in some cases.
  • the CAAC-OS film is formed, for example, by the following method.
  • the CAAC-OS film is formed by a sputtering method with a polycrystalline oxide semiconductor sputtering target.
  • the substrate temperature during the deposition is higher than or equal to 100 °C and lower than or equal to 740 °C, preferably higher than or equal to 200 °C and lower than or equal to 500 °C.
  • the substrate temperature during the deposition when the flat-plate-like or pellet-like sputtered particles reach the substrate, migration occurs on the substrate surface, so that a flat plane of the sputtered particles is attached to the substrate.
  • the sputtered particle is charged positively, whereby sputtered particles are attached to the substrate while repelling each other; thus, the sputtered particles do not overlap with each other randomly, and a CAAC-OS film with a uniform thickness can be deposited.
  • the crystal state can be prevented from being broken by the impurities.
  • the concentration of impurities e.g., hydrogen, water, carbon dioxide, or nitrogen
  • the concentration of impurities in a deposition gas may be reduced.
  • a deposition gas whose dew point is -80 °C or lower, preferably -100 °C or lower is used.
  • the proportion of oxygen in the deposition gas be increased and the power be optimized in order to reduce plasma damage at the deposition.
  • the proportion of oxygen in the deposition gas is higher than or equal to 30 vol%, preferably 100 vol%.
  • the CAAC-OS film is formed by the following method.
  • a first oxide semiconductor film is formed to a thickness of greater than or equal to 1 nm and less than 10 nm.
  • the first oxide semiconductor film is formed by a sputtering method.
  • the substrate temperature is set to higher than or equal to 100 °C and lower than or equal to 500 °C, preferably higher than or equal to 150°C and lower than or equal to 450 °C, and the proportion of oxygen in a deposition gas is set to higher than or equal to 30 vol%, preferably 100 vol%.
  • heat treatment is performed so that the first oxide semiconductor film becomes a first CAAC-OS film with high crystallinity.
  • the temperature of the heat treatment is higher than or equal to 350 °C and lower than or equal to 740 °C, preferably higher than or equal to 450 °C and lower than or equal to 650 °C.
  • the heat treatment time is longer than or equal to 1 minute and shorter than or equal to 24 hours, preferably longer than or equal to 6 minutes and shorter than or equal to 4 hours.
  • the heat treatment may be performed in an inert atmosphere or an oxidation atmosphere. It is preferable to perform heat treatment in an inert atmosphere and then perform heat treatment in an oxidation atmosphere.
  • the heat treatment in an inert atmosphere can reduce the concentration of impurities in the first oxide semiconductor film for a short time.
  • the heat treatment in an inert atmosphere may generate oxygen vacancies in the first oxide semiconductor film.
  • the heat treatment in an oxidation atmosphere can reduce the oxygen vacancies.
  • the heat treatment may be performed under a reduced pressure, such as 1000 Pa or lower, 100 Pa or lower, 10 Pa or lower, or 1 Pa or lower. The heat treatment under the reduced pressure can reduce the concentration of impurities in the first oxide semiconductor film for a shorter time.
  • the first oxide semiconductor film with a thickness greater than or equal to 1 nm and less than 10 nm can be easily crystallized by heat treatment as compared to the case where the first oxide semiconductor film has a thickness greater than or equal to 10 nm.
  • a second oxide semiconductor film having the same composition as the first oxide semiconductor film is formed to a thickness of greater than or equal to 10 nm and less than or equal to 50 nm.
  • the second oxide semiconductor film is formed by a sputtering method. Specifically, the substrate temperature is set to higher than or equal to 100 °C and lower than or equal to 500 °C, preferably higher than or equal to 150°C and lower than or equal to 450 °C, and the proportion of oxygen in a deposition gas is set to higher than or equal to 30 vol%, preferably 100 vol%.
  • heat treatment is performed so that solid phase growth of the second oxide semiconductor film is performed using the first CAAC-OS film, thereby forming a second CAAC-OS film with high crystallinity.
  • the temperature of the heat treatment is higher than or equal to 350 °C and lower than or equal to 740 °C, preferably higher than or equal to 450 °C and lower than or equal to 650 °C.
  • the heat treatment time is longer than or equal to 1 minute and shorter than or equal to 24 hours, preferably longer than or equal to 6 minutes and shorter than or equal to 4 hours.
  • the heat treatment may be performed in an inert atmosphere or an oxidation atmosphere. It is preferable to perform heat treatment in an inert atmosphere and then perform heat treatment in an oxidation atmosphere.
  • the heat treatment in an inert atmosphere can reduce the concentration of impurities in the second oxide semiconductor film for a short time.
  • the heat treatment in an inert atmosphere may generate oxygen vacancies in the second oxide semiconductor film.
  • the heat treatment in an oxidation atmosphere can reduce the oxygen vacancies.
  • the heat treatment may be performed under a reduced pressure, such as 1000 Pa or lower, 100 Pa or lower, 10 Pa or lower, or 1 Pa or lower. The heat treatment under the reduced pressure can reduce the concentration of impurities in the second oxide semiconductor film for a shorter time.
  • a CAAC-OS film with a total thickness of greater than or equal to 10 nm can be formed.
  • This embodiment is obtained by performing change, addition, modification, removal, application, superordinate conceptualization, or subordinate conceptualization on part or the whole of another embodiment.
  • part or the whole of this embodiment can be freely combined with, applied to, or replaced with part or the whole of another embodiment.
  • transistors with a variety of structures can be used, without limitation to a certain type.
  • a transistor including single crystal silicon or a transistor including a non-single-crystal semiconductor film typified by amorphous silicon, polycrystalline silicon, microcrystalline (also referred to as microcrystal, nanocrystal, or semi-amorphous) silicon, or the like can be used.
  • a thin film transistor (TFT) obtained by thinning such a semiconductor, or the like can be used.
  • TFT thin film transistor
  • TFTs can be formed using a large substrate. Therefore, many display devices can be formed at the same time at low cost.
  • a substrate having low heat resistance can be used because of a low manufacturing temperature. Therefore, the transistor can be formed using a light-transmitting substrate.
  • transmission of light in a display element can be controlled by using the transistor formed using the light-transmitting substrate.
  • part of a film included in the transistor can transmit light because the thickness of the transistor is small. Therefore, the aperture ratio can be increased.
  • a gate driver circuit (a scan line driver circuit), a source driver circuit (a signal line driver circuit), and a signal processing circuit (a signal generation circuit, a gamma correction circuit, a DA converter circuit, or the like) can be formed using the same substrate.
  • crystallinity can be further increased and a transistor having excellent electrical characteristics can be formed.
  • crystallinity can be increased by just performing heat treatment without performing laser irradiation.
  • a gate driver circuit a scan line driver circuit
  • part of a source driver circuit e.g., an analog switch
  • polycrystalline silicon or microcrystalline silicon can be formed without use of a catalyst (e.g., nickel).
  • the crystallinity of silicon be improved to polycrystal, microcrystal, or the like in the whole panel; however, the crystallinity of silicon in the present invention is not limited thereto.
  • the crystallinity of silicon may be improved only in part of the panel.
  • a selective increase in crystallinity can be achieved by selective laser irradiation or the like.
  • only a peripheral driver circuit region which is a region excluding pixels, may be irradiated with laser light.
  • a region of a gate driver circuit, a source driver circuit, or the like may be irradiated with laser light.
  • only part of a source driver circuit e.g., an analog switch
  • the crystallinity of silicon only in a region in which a circuit needs to operate at high speed can be improved. Because a pixel region is not particularly needed to operate at high speed, even if crystallinity is not improved, the pixel circuit can operate without problems. Thus, a region whose crystallinity is improved is small, so that manufacturing steps can be decreased. As a result, the throughput can be increased and the manufacturing cost can be reduced. Alternatively, the number of manufacturing apparatuses needed is small; thus, the manufacturing cost can be reduced.
  • the transistor examples include a transistor including a compound semiconductor (e.g., SiGe or GaAs) or an oxide semiconductor (e.g., ZnO, InGaZnO, indium zinc oxide (IZO), indium tin oxide (ITO), SnO, TiO, AlZnSnO (AZTO), or In-Sn-Zn-0 (ITZO)) and a thin film transistor including a thin film of such a compound semiconductor or oxide semiconductor.
  • the manufacturing temperature can be low and for example, such a transistor can be formed at room temperature. Accordingly, the transistor can be formed directly on a substrate having low heat resistance, such as a plastic substrate or a film substrate.
  • such a compound semiconductor or oxide semiconductor can be used for not only a channel portion of a transistor but also for other applications.
  • a compound semiconductor or oxide semiconductor can be used for a wiring, a resistive element, a pixel electrode, a light-transmitting electrode, or the like. Since such an element can be formed at the same time as a transistor, the cost can be reduced.
  • a transistor formed by an ink-jet method or a printing method can be used. Accordingly, such a transistor can be formed at room temperature, can be formed at a low vacuum, or can be formed using a large substrate. Thus, the transistor can be formed without using a mask (reticle), which enables the layout of the transistor to be easily changed. Alternatively, the transistor can be formed without using a resist, leading to reductions in material cost and the number of steps. Furthermore, a film can be formed only in a portion where the film is needed, a material is not wasted as compared with the case of employing a manufacturing method by which etching is performed after the film is formed over the entire surface, so that the cost can be reduced.
  • a transistor including an organic semiconductor or a carbon nanotube can be used.
  • a transistor can be formed over a flexible substrate.
  • a device including a transistor which includes an organic semiconductor or a carbon nanotube can resist an impact.
  • transistors with a variety of different structures can be used.
  • a MOS transistor, a junction transistor, a bipolar transistor, or the like can be used. Since a MOS transistor has a small size, a large number of transistors can be mounted. Note that a MOS transistor and a bipolar transistor may be formed over one substrate, in which case reductions in power consumption and size, high-speed operation, and the like can be achieved.
  • a transistor with a multi-gate structure having two or more gate electrodes can be used.
  • the multi-gate structure a structure where a plurality of transistors are connected in series is provided because channel regions are connected in series.
  • the amount of off-state current can be reduced and the withstand voltage of the transistor can be increased (reliability can be improved).
  • the drain-source current does not change so much even if the drain-source voltage fluctuates when the transistor operates in a saturation region, so that a flat slope of the voltage-current characteristics can be obtained.
  • an ideal current source circuit or an active load having extremely high resistance can be obtained. Accordingly, a differential circuit, a current mirror circuit, or the like having excellent properties can be obtained.
  • a transistor with a structure where gate electrodes are provided above and below a channel can be used.
  • a circuit structure where a plurality of transistors are connected in parallel is provided.
  • a channel region is increased, so that the amount of current can be increased.
  • the subthreshold swing (S value) can be improved.
  • a transistor with a structure where a gate electrode is formed above a channel region a structure where a gate electrode is formed below a channel region, a staggered structure, an inverted staggered structure, a structure where a channel region is divided into a plurality of regions, a structure where channel regions are connected in parallel or in series, or the like can be used.
  • a transistor with any of a variety of structures such as a planar type, a FIN-type, a TRI-GATE type, a top-gate type, a bottom-gate type, a double-gate type (with gates above and below a channel), and the like can be used.
  • a transistor with a structure where a source electrode or a drain electrode overlaps with a channel region (or part thereof) can be used.
  • the structure where the source electrode or the drain electrode overlaps with the channel region (or part thereof) is employed, unstable operation due to electric charge accumulated in part of the channel region can be prevented.
  • a transistor with a structure where an LDD region is provided can be used. Provision of the LDD region enables a reduction in off-current or an increase in the withstand voltage of the transistor (an improvement in reliability). Alternatively, by providing the LDD region, the drain current does not change so much even when the drain-source voltage fluctuates when the transistor operates in a saturation region, so that a flat slope of the voltage-current characteristics can be obtained.
  • a variety of substrates can be used to form a transistor.
  • the type of a substrate is not limited to a certain type.
  • the substrate include a semiconductor substrate (e.g., a single crystal substrate or a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate including stainless steel foil, a tungsten substrate, a substrate including tungsten foil, a flexible substrate, an attachment film, paper including a fibrous material, and a base material film.
  • a glass substrate include a barium borosilicate glass substrate, an aluminoborosilicate glass substrate, and soda lime glass substrate.
  • Examples of a flexible substrate, an attachment film, a base material film, or the like are as follows: plastic typified by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyether sulfone (PES); a synthetic resin such as acrylic; polypropylene; polyester; polyvinyl fluoride; polyvinyl chloride; polyamide; polyimide; aramid; epoxy; an inorganic vapor deposition film; and paper.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PES polyether sulfone
  • a synthetic resin such as acrylic; polypropylene
  • polyester polyvinyl fluoride; polyvinyl chloride; polyamide; polyimide; aramid
  • epoxy an inorganic vapor deposition film
  • paper paper.
  • a transistor is formed using a semiconductor substrate, a single crystal substrate, an SOI substrate, or the like, it is possible to form a transistor with few variations in characteristics, size, shape
  • a transistor may be formed using a substrate, and then, the transistor may be transferred to another substrate.
  • a substrate to which a transistor is transferred include, in addition to the above substrate over which the transistor can be formed, a paper substrate, a cellophane substrate, an aramid film substrate, a polyimide film substrate, a stone substrate, a wood substrate, a cloth substrate (including a natural fiber (e.g., silk, cotton, or hemp), a synthetic fiber (e.g., nylon, polyurethane, or polyester), a regenerated fiber (e.g., acetate, cupra, rayon, or regenerated polyester), and the like), a leather substrate, and a rubber substrate.
  • the use of such a substrate enables formation of a transistor with excellent properties, a transistor with low power consumption, or a device with high durability, high heat resistance, or a reduction in weight or thickness.
  • all the circuits which are necessary to realize a desired function can be formed using one substrate (e.g., a glass substrate, a plastic substrate, a single crystal substrate, or an SOI substrate).
  • one substrate e.g., a glass substrate, a plastic substrate, a single crystal substrate, or an SOI substrate.
  • part of the circuits which are necessary to realize the predetermined function may be formed using a substrate and another part of the circuits which are necessary to realize the predetermined function may be formed using another substrate.
  • part of the circuits which are necessary to realize the predetermined function can be formed using a glass substrate and another part of the circuits which are necessary to realize the predetermined function can be formed using a single crystal substrate (or an SOI substrate).
  • the single crystal substrate over which the another part of the circuits which are necessary to realize the predetermined function can be connected to the glass substrate by COG (chip on glass), and the IC chip can be provided over the glass substrate.
  • the IC chip can be connected to the glass substrate by TAB (tape automated bonding), COF (chip on film), SMT (surface mount technology), a printed circuit board, or the like.
  • a circuit in a portion where a driving voltage is high, a circuit in a portion where a driving frequency is high, or the like consumes much power in many cases.
  • a circuit is formed over a substrate (e.g., a single crystal substrate) different from a substrate over which a pixel portion is formed, whereby an IC chip is formed.
  • the use of this IC chip allows prevention of an increase in power consumption.
  • the invention excluding content which is not specified in the drawings and texts in this specification can be constituted.
  • the range of a value e.g., the maximum and minimum values
  • the range may be freely narrowed or a value in the range may be excluded, so that the invention can be specified by a range part of which is excluded. In this manner, it is possible to specify the scope of the present invention so that a conventional technology is excluded, for example.
  • a diagram of a circuit including a first transistor to a fifth transistor is illustrated.
  • the circuit does not include a sixth transistor in the invention.
  • the circuit does not include a capacitor in the invention.
  • the circuit does not include a sixth transistor with a particular connection structure in the invention.
  • the circuit does not include a capacitor with a particular connection structure in the invention.
  • a sixth transistor whose gate is connected to a gate of the third transistor is not included in the invention.
  • a capacitor whose first electrode is connected to the gate of the third transistor is not included in the invention.
  • a description of a value "a voltage is preferably higher than or equal to 3 V and lower than or equal to 10 V" is given.
  • the case where the voltage is higher than or equal to -2 V and lower than or equal to 1 V is excluded from the invention.
  • the case where the voltage is higher than or equal to 13 V is excluded from the invention.
  • the voltage is higher than or equal to 5 V and lower than or equal to 8 V in the invention.
  • the voltage is approximately 9 V in the invention.
  • the voltage is higher than or equal to 3 V and lower than or equal to 10 V but is not 9 V in the invention.
  • a description "a voltage is preferred to be 10 V" is given.
  • the case where the voltage is higher than or equal to -2 V and lower than or equal to 1 V is excluded from the invention.
  • the case where the voltage is higher than or equal to 13 V is excluded from the invention.
  • a description "a film is an insulating film" is given to describe properties of a material.
  • the case where the insulating film is an organic insulating film is excluded from the invention.
  • the case where the insulating film is an inorganic insulating film is excluded from the invention.
  • a description of a stacked-layer structure "a film is provided between A and B" is given.
  • the case where the film is a stacked film of four or more layers is excluded from the invention.
  • the case where a conductive film is provided between A and the film is excluded from the invention.
  • Company A manufactures and sells transmitting devices
  • Company B manufactures and sells receiving devices.
  • Company A manufactures and sells semiconductor devices including TFTs
  • Company B purchases the semiconductor devices, provides light-emitting elements for the semiconductor devices, and completes light-emitting devices.
  • one embodiment of the invention can be constituted so that a patent infringement can be claimed against each of Company A and Company B. That is, one embodiment of the invention with which a patent infringement suit can be filed against Company A or Company B is clear and can be regarded as being disclosed in this specification or the like.
  • one embodiment of the invention can be constituted by only a transmitting device and one embodiment of the invention can be constituted by only a receiving device.
  • Those embodiments of the invention are clear and can be regarded as being disclosed in this specification or the like.
  • one embodiment of the invention can be constituted by only a semiconductor device including a TFT, and one embodiment of the invention can be constituted by only a light-emitting device including a TFT and a light-emitting element.
  • Those embodiments of the invention are clear and can be regarded as being disclosed in this specification or the like.
  • an active element e.g., a transistor or a diode
  • a passive element e.g., a capacitor or a resistor
  • a diagram or a text including one or more of active elements (e.g., transistors or diodes), wirings, passive elements (e.g., capacitors or resistors), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operating methods, manufacturing methods, or the like
  • active elements e.g., transistors or diodes
  • passive elements e.g., capacitors or resistors
  • conductive layers e.g., insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operating methods, manufacturing methods, or the like
  • M layers M is an integer, where M ⁇ N
  • N layers N is an integer
  • M elements Mis an integer, where M ⁇ N
  • a content described in at least a diagram (which may be part of the diagram) is disclosed as one embodiment of the invention, and one embodiment of the invention can be constituted. Therefore, when a certain content is described in a diagram, the content is disclosed as one embodiment of the invention even when the content is not described with a text, and one embodiment of the invention can be constituted. In a similar manner, part of a diagram, which is taken out from the diagram, is disclosed as one embodiment of the invention, and one embodiment of the invention can be constituted.
  • the term can be regarded as the length of one side of a minimal cube where the object fits, or an equivalent circle diameter of a cross section of the object.
  • equivalent circle diameter of a cross section of the object refers to the diameter of a perfect circle having the same area as that of the cross section of the object.
  • a “semiconductor” includes characteristics of an “insulator” in some cases when the conductivity is sufficiently low, for example. Further, a “semiconductor” and an “insulator” cannot be strictly distinguished from each other in some cases because a border between the "semiconductor” and the "insulator” is not clear. Accordingly, a “semiconductor” in this specification can be called an “insulator” in some cases. Similarly, an “insulator” in this specification can be called a “semiconductor” in some cases.
  • a “semiconductor” includes characteristics of a “conductor” in some cases when the conductivity is sufficiently high, for example. Furthermore, a “semiconductor” and a “conductor” cannot be strictly distinguished from each other in some cases because a border between the "semiconductor” and the "conductor” is not clear. Accordingly, a “semiconductor” in this specification can be called a “conductor” in some cases. Similarly, a “conductor” in this specification can be called a “semiconductor” in some cases.
  • an impurity in a semiconductor film refers to, for example, elements other than the main components of a semiconductor film.
  • an element with a concentration of lower than 0.1 atomic% is an impurity.
  • carrier traps may be formed in the semiconductor film, the carrier mobility may be decreased, or the crystallinity may be decreased, for example.
  • examples of an impurity which changes characteristics of the semiconductor film include Group 1 elements, Group 2 elements, Group 14 elements, Group 15 elements, and transition metals other than the main components; specifically, there are hydrogen (included in water), lithium, sodium, silicon, boron, phosphorus, carbon, and nitrogen, for example.
  • oxygen vacancies may be formed by entry of impurities.
  • examples of an impurity which changes the characteristics of the semiconductor film include oxygen, Group 1 elements except hydrogen, Group 2 elements, Group 13 elements, and Group 15 elements.
  • excess oxygen refers to oxygen in excess of the stoichiometric composition, for example.
  • excess oxygen refers to oxygen released by heating, for example.
  • Excess oxygen can move inside a film or a layer.
  • Excess oxygen moves between atoms in a film or a layer or excess oxygen replaces oxygen that is a constituent of a film or a layer and moves like a billiard ball.
  • An insulating film having excess oxygen means an insulating film from which oxygen is released by heat treatment, for example.
  • a term “parallel” indicates that the angle formed between two straight lines is greater than or equal to -10° and less than or equal to 10°, and accordingly also includes the case where the angle is greater than or equal to -5° and less than or equal to 5°.
  • a term “perpendicular” indicates that the angle formed between two straight lines is greater than or equal to 80° and less than or equal to 100°, and accordingly includes the case where the angle is greater than or equal to 85° and less than or equal to 95°.
  • a conductive film may be formed using, for example, a single layer or a stack of a conductive film containing aluminum, titanium, chromium, cobalt, nickel, copper, yttrium, zirconium, molybdenum, ruthenium, silver, tantalum, or tungsten.
  • a light-transmitting conductive film for example, an oxide film such as an In-Zn-W oxide film, an In-Sn oxide film, an In-Zn oxide film, an indium oxide film, a zinc oxide film, or a tin oxide film may be used.
  • a slight amount of Al, Ga, Sb, F, or the like may be added to the above-described oxide film.
  • a metal thin film having a thickness which enables light to be transmitted (preferably, approximately greater than or equal to 5 nm and less than or equal to 30 nm) can also be used.
  • an Ag film, a Mg film, or an Ag-Mg alloy film with a thickness of 5 nm may be used.
  • a film that reflects visible light efficiently a film containing lithium, aluminum, titanium, magnesium, lanthanum, silver, silicon, or nickel can be used.
  • an insulating film for example, a single layer or a stack of an insulating film containing aluminum oxide, magnesium oxide, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, or tantalum oxide may be used.
  • a resin film made of a polyimide resin, an acrylic resin, an epoxy resin, a silicone resin, or the like may be used.
  • the trigonal and rhombohedral crystal systems are included in the hexagonal crystal system.
  • a transistor is additionally provided with a second gate for applying a potential to a back channel.
  • the terminal that is generally called a gate is called a "front gate” and the other is called a “back gate” in this specification.
  • a voltage refers to a difference between potentials of two points
  • a potential refers to electrostatic energy (electric potential energy) of a unit charge at a given point in an electrostatic field.
  • a difference between a potential of one point and a reference potential is merely called a potential or a voltage
  • a potential and a voltage are used as synonymous words in many cases.
  • a potential may be rephrased as a voltage and a voltage may be rephrased as a potential unless otherwise specified.
  • a voltage refers to a difference between a given potential and a reference potential (e.g., a ground potential) in many cases.
  • a voltage, a potential, and a potential difference can also be referred to as a potential, a voltage, and a voltage difference, respectively.
  • a voltage refers to a difference between potentials of two points
  • a potential refers to electrostatic energy (electric potential energy) of a unit charge at a given point in an electrostatic field.
  • a potential and a voltage are relative values.
  • a ground potential is not always 0 V.
  • a transistor is a kind of semiconductor elements and can achieve amplification of current or voltage, switching operation for controlling conduction or non-conduction, or the like.
  • a transistor in this specification includes an insulated-gate field effect transistor (IGFET) and a thin film transistor (TFT).
  • a transistor is an element having at least three terminals: a gate, a drain, and a source.
  • the transistor has a channel region between the drain (a drain terminal, a drain region, or a drain electrode) and the source (a source terminal, a source region, or a source electrode), and current can flow through the drain, the channel region, and the source.
  • the source and the drain of the transistor change depending on the structure, the operating condition, and the like of the transistor, it is difficult to define which is a source or a drain. Therefore, a portion functioning as a source or a drain is not called a source or a drain in some cases.
  • one of the source and the drain is referred to as a first terminal, a first electrode, or a first region and the other of the source and the drain is referred to as a second terminal, a second electrode, or a second region in some cases.
  • X and F when it is explicitly described that X and F are connected, the case where X and Y are electrically connected, the case where X and Y are functionally connected, and the case where X and Y are directly connected are included therein.
  • X and Y each denote an object (e.g., a device, an element, a circuit, a line, an electrode, a terminal, a conductive film, a layer, or the like). Accordingly, another element may be provided between elements having a connection relation illustrated in drawings and texts, without limitation on a predetermined connection relation, for example, the connection relation illustrated in the drawings and the texts.
  • Examples of the case where X and Y are directly connected include the case where an element that allows an electrical connection between X and ⁇ (e.g., a switch, a transistor, a capacitor, an inductor, a resistor, a diode, a display element, a light-emitting element, and a load) is not connected between X and Y, and the case where X and Y are connected without the element that allows the electrical connection between X and Y provided therebetween.
  • an element that allows an electrical connection between X and ⁇ e.g., a switch, a transistor, a capacitor, an inductor, a resistor, a diode, a display element, a light-emitting element, and a load
  • one or more elements that enable electrical connection between and Y can be connected between X and Y.
  • a switch is controlled to be on or off. That is, a switch is conducting or not conducting (is turned on or off) to determine whether current flows therethrough or not.
  • the switch has a function of selecting and changing a current path. Note that the case where X and Y are electrically connected includes the case where X and F are directly connected.
  • one or more circuits that enable functional connection between X and Y can be connected between X and Y.
  • a logic circuit such as an inverter, a NAND circuit, or a NOR circuit
  • a signal converter circuit such as a DA converter circuit, an AD converter circuit, or a gamma correction circuit
  • a potential level converter circuit such as a power supply circuit (e.g., a step-up circuit or a step-down circuit) or a level shifter circuit for changing the potential level of a signal
  • a voltage source e.g., a step-up circuit or a step-down circuit
  • a level shifter circuit for changing the potential level of a signal
  • a voltage source e.g., a step-up circuit or a step-down circuit
  • an amplifier circuit such as a circuit that can increase signal amplitude, the amount of current, or the like, an operational amplifier, a differential amplifier circuit, a source follower circuit, or a buffer circuit
  • a signal generation circuit
  • X and Y are functionally connected.
  • the case where X and Y are functionally connected includes the case where X and Y are directly connected and the case where X and Y are electrically connected.
  • an explicit description "X and F are electrically connected” means that X and Y are electrically connected (i.e., the case where X and Y are connected with another element or another circuit provided therebetween), X and Y are functionally connected (i.e., the case where X and Y are functionally connected with another circuit provided therebetween), and X and Y are directly connected (i.e., the case where X and F are connected without another element or another circuit provided therebetween). That is, in this specification and the like, the explicit description "X and Y are electrically connected” is the same as the description "X and Y are connected” .
  • a source (or a first terminal or the like) of a transistor is electrically connected to Xthrough (or not through) Zl and a drain (or a second terminal or the like) of the transistor is electrically connected to Y through (or not through) Z2, or the case where a source (or a first terminal or the like) of a transistor is directly connected to one part of Zl and another part of Zl is directly connected to X while a drain (or a second terminal or the like) of the transistor is directly connected to one part of Z2 and another part of Z2 is directly connected to Y, can be expressed by using any of the following expressions.
  • the expressions include, for example, "X, Y, a source (or a first terminal or the like) of a transistor, and a drain (or a second terminal or the like) of the transistor are electrically connected to each other, and X, the source (or the first terminal or the like) of the transistor, the drain (or the second terminal or the like) of the transistor, and F are electrically connected to each other in this order", "a source (or a first terminal or the like) of a transistor is electrically connected to X, a drain (or a second terminal or the like) of the transistor is electrically connected to Y, and X, the source (or the first terminal or the like) of the transistor, the drain (or the second terminal or the like) of the transistor, and Y are electrically connected to each other in this order", and " is electrically connected to Y through a source (or a first terminal or the like) and a drain (or a second terminal or the like) of a transistor, and X, the source (or the first terminal
  • a source (or a first terminal or the like) of a transistor is electrically connected to through at least a first connection path, the first connection path does not include a second connection path, the second connection path is a path between the source (or the first terminal or the like) of the transistor and a drain (or a second terminal or the like) of the transistor, Zl is on the first connection path, the drain (or the second terminal or the like) of the transistor is electrically connected to Y through at least a third connection path, the third connection path does not include the second connection path, and Z2 is on the third connection path".
  • a source (or a first terminal or the like) of a transistor is electrically connected to X through Zl on at least a first connection path, the first connection path does not include a second connection path, the second connection path includes a connection path through the transistor, a drain (or a second terminal or the like) of the transistor is electrically connected to Y through Z2 on at least a third connection path, and the third connection path does not include the second connection path.
  • Still another example of the expression is "a source (or a first terminal or the like) of a transistor is electrically connected to X through Zl on at least a first electrical path, the first electrical path does not include a second electrical path, the second electrical path is an electrical path from the source (or the first terminal or the like) of the transistor to a drain (or a second terminal or the like) of the transistor, the drain (or the second terminal or the like) of the transistor is electrically connected to Y through Z2 on at least a third electrical path, the third electrical path does not include a fourth electrical path, and the fourth electrical path is an electrical path from the drain (or the second terminal or the like) of the transistor to the source (or the first terminal or the like) of the transistor".
  • the connection path in a circuit configuration is defined by an expression similar to the above examples, a source (or a first terminal or the like) and a drain (or a second terminal or the like) of a transistor can be distinguished from each other to specify the technical scope.
  • X, Y, Zl, and Z2 each denote an object (e.g., a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, and a layer).
  • one component has functions of a plurality of components in some cases.
  • one conductive film functions as the wiring and the electrode.
  • electrical connection in this specification includes in its category such a case where one conductive film has functions of a plurality of components.
  • Y is formed on or over X
  • each of X and Y corresponds to an object (e.g., a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, or a layer).
  • object e.g., a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, or a layer.
  • a layer Y is formed on (or over) a layer X
  • another layer e.g., the layer Z
  • Y is formed above X
  • another object may be placed between X and Y. Therefore, for example, when it is described that a layer Y is formed above a layer X, it includes both the case where the layer Y is formed on and in direct contact with the layer X, and the case where another layer (e.g., a layer Z) is formed on and in direct contact with the layer X and the layer Y is formed on and in direct contact with the layer Z.
  • another layer e.g., the layer Z
  • Y is formed over, on, or above X, it includes the case where Y is formed obliquely over/above X.
  • This embodiment is obtained by performing change, addition, modification, removal, application, superordinate conceptualization, or subordinate conceptualization on part or the whole of another embodiment.
  • part or the whole of this embodiment can be freely combined with, applied to, or replaced with part or the whole of another embodiment.

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Mathematical Physics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
PCT/IB2014/066089 2013-11-28 2014-11-17 Electronic device and driving method thereof Ceased WO2015079356A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020257016046A KR20250078585A (ko) 2013-11-28 2014-11-17 전자 기기 및 그 구동 방법
KR1020217033809A KR20210129272A (ko) 2013-11-28 2014-11-17 전자 기기 및 그 구동 방법
CN202110323206.8A CN113031703B (zh) 2013-11-28 2014-11-17 电子设备
KR1020237027422A KR102613466B1 (ko) 2013-11-28 2014-11-17 전자 기기 및 그 구동 방법
KR1020237042600A KR102810509B1 (ko) 2013-11-28 2014-11-17 전자 기기 및 그 구동 방법
KR1020167017255A KR102317295B1 (ko) 2013-11-28 2014-11-17 전자 기기 및 그 구동 방법
CN201480064843.6A CN105874525B (zh) 2013-11-28 2014-11-17 电子设备以及其驱动方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-245670 2013-11-28
JP2013245670 2013-11-28

Publications (1)

Publication Number Publication Date
WO2015079356A1 true WO2015079356A1 (en) 2015-06-04

Family

ID=53182373

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2014/066089 Ceased WO2015079356A1 (en) 2013-11-28 2014-11-17 Electronic device and driving method thereof

Country Status (6)

Country Link
US (5) US10142547B2 (enExample)
JP (5) JP2015127801A (enExample)
KR (5) KR102810509B1 (enExample)
CN (2) CN113031703B (enExample)
TW (2) TWI676119B (enExample)
WO (1) WO2015079356A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11003009B2 (en) 2016-06-10 2021-05-11 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US11309523B2 (en) 2017-11-30 2022-04-19 Semiconductor Energy Laboratory Co., Ltd. Flexible display panel and display device
US12287937B2 (en) 2016-09-06 2025-04-29 Semiconductor Energy Laboratory Co., Ltd. Electronic device, image display method, program, and display system
US12510778B2 (en) 2016-06-10 2025-12-30 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102097361B1 (ko) 2013-02-01 2020-04-07 삼성디스플레이 주식회사 가요성 디스플레이 장치를 구비한 모바일 기기 및 이의 동작 방법
USD763251S1 (en) * 2013-10-18 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Portable information terminal
USD756995S1 (en) * 2013-10-18 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Portable information terminal
USD757713S1 (en) * 2013-10-18 2016-05-31 Semiconductor Energy Laboratory Co., Ltd. Portable information terminal
US9229481B2 (en) 2013-12-20 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102153436B1 (ko) * 2014-01-15 2020-09-08 엘지전자 주식회사 이동단말기 및 그 제어방법
KR102358935B1 (ko) * 2014-02-12 2022-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기
CN112904941A (zh) 2014-02-28 2021-06-04 株式会社半导体能源研究所 电子设备
WO2016104822A1 (ko) * 2014-12-23 2016-06-30 엘지전자 주식회사 디스플레이 장치 및 제어 방법
US9703325B2 (en) * 2015-08-12 2017-07-11 Apple Inc. Coverglass fracture detection
USD859380S1 (en) * 2015-10-02 2019-09-10 Samsung Electronics Co., Ltd. Electronic device
KR102543912B1 (ko) * 2015-10-05 2023-06-15 삼성전자 주식회사 복수의 디스플레이를 구비한 전자장치 및 그 제어 방법
USD798264S1 (en) * 2015-12-22 2017-09-26 Lg Electronics Inc. Mobile phone
USD824871S1 (en) * 2015-12-22 2018-08-07 Lg Electronics Inc. Mobile phone
US10429894B2 (en) * 2015-12-31 2019-10-01 Shenzhen Royole Technologies Co., Ltd. Bendable mobile terminal
JP6423808B2 (ja) * 2016-02-10 2018-11-14 株式会社ジャパンディスプレイ 表示装置
TWI792916B (zh) 2016-06-24 2023-02-11 日商半導體能源研究所股份有限公司 顯示裝置、電子裝置
KR102527213B1 (ko) * 2016-07-05 2023-04-28 삼성디스플레이 주식회사 표시 장치
TWI726006B (zh) * 2016-07-15 2021-05-01 日商半導體能源研究所股份有限公司 顯示裝置、輸入輸出裝置、資料處理裝置
KR102660537B1 (ko) * 2016-07-19 2024-04-26 삼성디스플레이 주식회사 표시 장치
US10528079B2 (en) 2016-08-26 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Data processing device, display method, input/output method, server system, and computer program
KR102564305B1 (ko) * 2016-09-09 2023-08-08 삼성디스플레이 주식회사 표시 장치
US10488887B2 (en) * 2016-10-04 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Electronic device
CN108091298B (zh) * 2016-11-22 2019-11-15 昆山工研院新型平板显示技术中心有限公司 有机发光显示屏及其显示控制方法
KR102653367B1 (ko) * 2016-12-08 2024-04-02 삼성전자 주식회사 벤디드 디스플레이를 구비한 전자 장치 및 그 제어 방법
KR20180076862A (ko) * 2016-12-28 2018-07-06 삼성전자주식회사 디스플레이를 가지는 전자 장치
KR102360492B1 (ko) * 2017-03-24 2022-02-09 삼성전자주식회사 플렉시블 디스플레이 및 이를 포함하는 전자 장치
KR102388902B1 (ko) 2017-05-26 2022-04-22 삼성디스플레이 주식회사 표시 장치 및 이를 포함하는 전자 기기
KR102421518B1 (ko) * 2017-06-27 2022-07-15 엘지전자 주식회사 전자장치 및 이의 제어방법
CN107357077B (zh) * 2017-08-21 2020-03-13 京东方科技集团股份有限公司 光栅组件、显示装置及控制方法、存储介质
KR102385727B1 (ko) * 2017-09-14 2022-04-13 삼성디스플레이 주식회사 표시 장치
CN107808600A (zh) * 2017-12-08 2018-03-16 京东方科技集团股份有限公司 显示装置及其控制方法
CN108108062A (zh) * 2018-01-16 2018-06-01 北京小米移动软件有限公司 电子设备
CN108924291A (zh) * 2018-06-12 2018-11-30 武汉华星光电半导体显示技术有限公司 柔性显示面板及电子设备
CN109040440A (zh) * 2018-07-25 2018-12-18 努比亚技术有限公司 一种拍摄方法、移动终端及计算机可读存储介质
US11817025B1 (en) * 2018-11-13 2023-11-14 Apple Inc. Electronic devices having housings with image transport layers
KR102609460B1 (ko) * 2018-11-20 2023-12-05 삼성디스플레이 주식회사 폴더블 표시 장치 및 이의 구동 방법
CN109585506A (zh) 2018-11-22 2019-04-05 武汉华星光电技术有限公司 具有照明功能的oled显示设备
KR102798966B1 (ko) * 2019-04-01 2025-04-24 삼성디스플레이 주식회사 전자 장치
US11832464B2 (en) 2019-08-02 2023-11-28 Semiconductor Energy Laboratory Co., Ltd. Functional panel, display device, input/output device, and data processing device
KR102675255B1 (ko) * 2019-10-07 2024-06-14 삼성전자 주식회사 전자 장치에서 카메라의 조명을 제공하는 방법 및 장치
CN112711339B (zh) * 2019-10-24 2024-07-05 名硕电脑(苏州)有限公司 触控板装置
USD1038927S1 (en) * 2020-01-20 2024-08-13 Compal Electronics, Inc. Notebook computer
USD1038928S1 (en) * 2020-01-20 2024-08-13 Compal Electronics, Inc. Notebook computer
USD1029822S1 (en) * 2020-01-20 2024-06-04 Compal Electronics, Inc. Notebook computer
USD1018524S1 (en) * 2020-01-20 2024-03-19 Compal Electronics, Inc. Notebook computer
USD1035649S1 (en) * 2020-01-20 2024-07-16 Compal Electronics, Inc. Notebook computer
USD1038930S1 (en) * 2020-01-20 2024-08-13 Compal Electronics, Inc. Notebook computer with secondary display screen
USD1040152S1 (en) * 2020-01-20 2024-08-27 Compal Electronics, Inc. Notebook computer
TWD207704S (zh) * 2020-03-18 2020-10-11 仁寶電腦工業股份有限公司 筆記型電腦
USD1033422S1 (en) * 2020-05-15 2024-07-02 Compal Electronics, Inc. Notebook computer equipped with variable aspect ratio screen
CN111813184B (zh) * 2020-07-16 2022-07-26 联想(北京)有限公司 一种电子设备
CN112053631B (zh) 2020-08-31 2021-12-03 武汉华星光电半导体显示技术有限公司 一种可折叠显示屏
EP4184501A4 (en) 2020-12-04 2023-12-27 Samsung Electronics Co., Ltd. ELECTRONIC DEVICE AND METHOD FOR PREDICTING AND COMPENSATING THE RESIDUAL IMAGE OF A DISPLAY
EP4410969A1 (en) 2021-09-29 2024-08-07 SK Bioscience Co., Ltd. Recombinant live attenuated rsv vaccine strain and production method therefor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004104164A (ja) * 2002-09-04 2004-04-02 Hitachi Ltd 撮像カメラ付きの折畳み式携帯端末装置
JP2005227762A (ja) * 2004-01-14 2005-08-25 Semiconductor Energy Lab Co Ltd 表示装置、電子機器
JP2010153813A (ja) * 2008-11-18 2010-07-08 Semiconductor Energy Lab Co Ltd 発光装置及びその作製方法、並びに、携帯電話機
WO2012167204A2 (en) * 2011-06-03 2012-12-06 Microsoft Corporation Flexible display flexure assembly
WO2013048881A1 (en) * 2011-09-27 2013-04-04 Apple Inc. Electronic devices with sidewall displays

Family Cites Families (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5995025A (en) 1997-12-18 1999-11-30 Daniel I. Sternglass Folding keyboard with sliding segments for electronic products
JP3546996B2 (ja) 1999-12-24 2004-07-28 日本電気株式会社 カメラ付き携帯情報端末装置
JP4560974B2 (ja) 2001-03-15 2010-10-13 コニカミノルタビジネステクノロジーズ株式会社 画像表示装置
JP3778807B2 (ja) 2001-03-30 2006-05-24 三洋電機株式会社 折畳式通信端末装置および画像表示方法
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003274250A (ja) 2002-03-15 2003-09-26 Konica Corp カメラ
US7184086B2 (en) * 2002-02-25 2007-02-27 Konica Corporation Camera having flexible display
US20030201974A1 (en) 2002-04-26 2003-10-30 Yin Memphis Zhihong Apparatus display
JP2003337541A (ja) 2002-05-17 2003-11-28 Toshiba Matsushita Display Technology Co Ltd 着用型表示装置
JP4004865B2 (ja) 2002-06-12 2007-11-07 富士通株式会社 携帯端末
JP2004128910A (ja) 2002-10-03 2004-04-22 Hitachi Ltd 携帯端末
JP2004128909A (ja) 2002-10-03 2004-04-22 Hitachi Ltd 携帯端末
JP2004180245A (ja) 2002-11-29 2004-06-24 Casio Comput Co Ltd 携帯端末機器、撮像装置、撮像方法及びプログラム
JP2004187154A (ja) * 2002-12-05 2004-07-02 Sharp Corp カメラ搭載携帯端末
JP4087311B2 (ja) * 2003-08-06 2008-05-21 シャープ株式会社 携帯機器
JP2005114759A (ja) 2003-10-02 2005-04-28 Canon Inc ディスプレイ装置、携帯電話機、及び電子機器
US7453426B2 (en) 2004-01-14 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus
US20050156952A1 (en) 2004-01-20 2005-07-21 Orner Edward E. Interactive display systems
JP2006005712A (ja) 2004-06-18 2006-01-05 Konica Minolta Holdings Inc 携帯端末
EP1800280B1 (en) * 2004-10-05 2011-12-28 Creator Technology B.V. Rollable display device
KR100631603B1 (ko) 2004-10-25 2006-10-09 엘지전자 주식회사 이동 통신 단말기의 영상 화질 개선 방법
JP2006243621A (ja) 2005-03-07 2006-09-14 Canon Inc 表示装置
JP2006279744A (ja) * 2005-03-30 2006-10-12 Matsushita Electric Ind Co Ltd 通信端末
US7638372B2 (en) 2005-06-22 2009-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5352046B2 (ja) 2005-06-22 2013-11-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20070097014A1 (en) 2005-10-31 2007-05-03 Solomon Mark C Electronic device with flexible display screen
JP2008085581A (ja) * 2006-09-27 2008-04-10 Fujifilm Corp 撮影装置
WO2008126250A1 (ja) 2007-03-30 2008-10-23 Pioneer Corporation 発光装置
US8199960B2 (en) * 2007-10-11 2012-06-12 Sony Mobile Communications Ab Integrated speaker and display
KR101467293B1 (ko) * 2008-04-22 2014-12-02 삼성전자주식회사 촬영될 영상에 관련된 메뉴를 표시하는 ｕｉ 제공방법 및이를 적용한 촬영장치
JP5106341B2 (ja) 2008-10-02 2012-12-26 株式会社ジャパンディスプレイイースト 表示装置
KR101521219B1 (ko) 2008-11-10 2015-05-18 엘지전자 주식회사 플렉서블 디스플레이를 이용하는 휴대 단말기 및 그 제어방법
US20100156887A1 (en) 2008-12-18 2010-06-24 Nokia Corporation Extended user interface
US20100253902A1 (en) 2009-04-07 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
TW201110802A (en) 2009-06-24 2011-03-16 Seiko Epson Corp Electro-optical device, electronic device, and illumination apparatus
JP5287541B2 (ja) 2009-06-24 2013-09-11 セイコーエプソン株式会社 電気光学装置、および電子機器
TWI412963B (zh) * 2009-07-01 2013-10-21 Htc Corp 資料顯示與移動方法及系統，及其電腦程式產品
US8593061B2 (en) 2009-08-25 2013-11-26 Seiko Epson Corporation Electro-optical device and electronic apparatus
JP5434513B2 (ja) * 2009-11-18 2014-03-05 富士通株式会社 携帯端末および輝度調整プログラム
US9152314B2 (en) * 2009-11-30 2015-10-06 Lg Electronics Inc. Mobile terminal and controlling method thereof
KR101580160B1 (ko) * 2009-11-30 2015-12-24 엘지전자 주식회사 이동단말기 및 그 제어방법
JP5707694B2 (ja) 2009-12-04 2015-04-30 ソニー株式会社 表示装置及び表示装置の制御方法
EP2616896A4 (en) 2010-09-17 2016-10-19 Apple Inc SENSOR FUSION
US8289115B2 (en) 2010-09-17 2012-10-16 Apple Inc. Sensor fusion
GB201112458D0 (en) 2010-09-28 2011-08-31 Yota Group Cyprus Ltd device with display screen
KR101685991B1 (ko) * 2010-09-30 2016-12-13 엘지전자 주식회사 이동 단말기 및 이동 단말기의 제어 방법
KR20120035042A (ko) * 2010-10-04 2012-04-13 삼성전자주식회사 디지털 영상 촬영 장치 및 이의 제어 방법
US9143668B2 (en) * 2010-10-29 2015-09-22 Apple Inc. Camera lens structures and display structures for electronic devices
JP2012141445A (ja) * 2010-12-28 2012-07-26 Ichikawa Soft Laboratory:Kk デジタルカメラおよびフラッシュ光発光色決定方法
US9335793B2 (en) 2011-01-31 2016-05-10 Apple Inc. Cover attachment with flexible display
CA2771851C (en) * 2011-04-12 2018-07-24 Research In Motion Limited Camera flash for improved color balance
JP5888589B2 (ja) * 2011-06-28 2016-03-22 株式会社リコー インクジェット記録用インク−記録用メディアセット及びインクジェット記録方法
KR101320384B1 (ko) 2011-06-30 2013-10-23 삼성디스플레이 주식회사 가요성 표시 패널 및 상기 가요성 표시 패널을 포함하는 표시 장치
US10061356B2 (en) 2011-06-30 2018-08-28 Samsung Display Co., Ltd. Flexible display panel and display apparatus including the flexible display panel
KR101795602B1 (ko) 2011-08-12 2017-11-08 삼성전자주식회사 디지털 촬영장치 및 그 제어방법
KR101515629B1 (ko) 2012-01-07 2015-04-27 삼성전자주식회사 플렉서블 표시부를 갖는 휴대단말의 이벤트 제공 방법 및 장치
KR101986169B1 (ko) * 2012-01-10 2019-09-30 엘지전자 주식회사 이동 단말기
KR101883179B1 (ko) * 2012-04-02 2018-07-30 엘지전자 주식회사 이동 단말기 및 그 동작 방법
KR101906827B1 (ko) * 2012-04-10 2018-12-05 삼성전자주식회사 연속 사진 촬영 장치 및 방법
CN102683841B (zh) * 2012-06-11 2014-12-10 上海坤锐电子科技有限公司 双频通信垂直折叠手机线贴天线
KR101386220B1 (ko) 2012-06-26 2014-04-17 삼성디스플레이 주식회사 플렉시블 디스플레이 장치
KR101958802B1 (ko) 2012-07-26 2019-03-18 삼성디스플레이 주식회사 접이식 표시 장치
CN104584109B (zh) 2012-09-03 2017-12-22 株式会社半导体能源研究所 显示装置及电子装置
US8804349B2 (en) 2012-10-19 2014-08-12 Samsung Display Co., Ltd. Foldable display device
JP5542975B2 (ja) 2013-01-16 2014-07-09 京セラ株式会社 電子機器
EP2960770A4 (en) 2013-02-21 2017-01-25 Kyocera Corporation Device
KR102479472B1 (ko) 2013-04-15 2022-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
CN111432515B (zh) * 2013-05-21 2024-01-19 株式会社半导体能源研究所 电子装置
US9342106B2 (en) 2013-06-05 2016-05-17 Nokia Corporation Apparatus and method for accessing components in a folded device
US9927840B2 (en) 2013-06-21 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Information processor for processing and displaying image data on a bendable display unit
US9525811B2 (en) * 2013-07-01 2016-12-20 Qualcomm Incorporated Display device configured as an illumination source
WO2015002037A1 (en) 2013-07-02 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Data processing device
US9818763B2 (en) 2013-07-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
KR102066482B1 (ko) 2013-07-16 2020-01-15 삼성전자주식회사 섬유 강화 플라스틱 소재 및 그를 포함하는 전자 기기
TWI630595B (zh) 2013-07-19 2018-07-21 半導體能源研究所股份有限公司 資料處理裝置
US9395070B2 (en) 2013-07-19 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Support of flexible component and light-emitting device
KR20220025259A (ko) 2013-07-19 2022-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20150021000A (ko) 2013-08-19 2015-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2015029199A1 (ja) * 2013-08-30 2015-03-05 日立マクセル株式会社 情報処理装置、情報処理方法、及び、プログラム
JP6562608B2 (ja) 2013-09-19 2019-08-21 株式会社半導体エネルギー研究所 電子機器、及び電子機器の駆動方法
TWI811799B (zh) 2013-10-11 2023-08-11 日商半導體能源研究所股份有限公司 驅動可攜式資料處理裝置的方法
US9430180B2 (en) * 2013-11-15 2016-08-30 Semiconductor Energy Laboratory Co., Ltd Display panel and electronic device
US9229481B2 (en) * 2013-12-20 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102358935B1 (ko) * 2014-02-12 2022-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기
JP2016085457A (ja) * 2014-10-24 2016-05-19 株式会社半導体エネルギー研究所 電子機器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004104164A (ja) * 2002-09-04 2004-04-02 Hitachi Ltd 撮像カメラ付きの折畳み式携帯端末装置
JP2005227762A (ja) * 2004-01-14 2005-08-25 Semiconductor Energy Lab Co Ltd 表示装置、電子機器
JP2010153813A (ja) * 2008-11-18 2010-07-08 Semiconductor Energy Lab Co Ltd 発光装置及びその作製方法、並びに、携帯電話機
WO2012167204A2 (en) * 2011-06-03 2012-12-06 Microsoft Corporation Flexible display flexure assembly
WO2013048881A1 (en) * 2011-09-27 2013-04-04 Apple Inc. Electronic devices with sidewall displays

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11003009B2 (en) 2016-06-10 2021-05-11 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US11550181B2 (en) 2016-06-10 2023-01-10 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US12235537B2 (en) 2016-06-10 2025-02-25 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US12510778B2 (en) 2016-06-10 2025-12-30 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US12287937B2 (en) 2016-09-06 2025-04-29 Semiconductor Energy Laboratory Co., Ltd. Electronic device, image display method, program, and display system
US11309523B2 (en) 2017-11-30 2022-04-19 Semiconductor Energy Laboratory Co., Ltd. Flexible display panel and display device
US11758759B2 (en) 2017-11-30 2023-09-12 Semiconductor Energy Laboratory Co., Ltd. Display panel
US12412547B2 (en) 2017-11-30 2025-09-09 Semiconductor Energy Laboratory Co., Ltd. Flexible display panel

Also Published As

Publication number Publication date
US11846963B2 (en) 2023-12-19
US12443222B2 (en) 2025-10-14
JP2020024426A (ja) 2020-02-13
TW201531902A (zh) 2015-08-16
US10771705B2 (en) 2020-09-08
TWI676119B (zh) 2019-11-01
KR20250078585A (ko) 2025-06-02
JP2015127801A (ja) 2015-07-09
US10142547B2 (en) 2018-11-27
KR20230173733A (ko) 2023-12-27
US20190075243A1 (en) 2019-03-07
KR102317295B1 (ko) 2021-10-26
TW201921234A (zh) 2019-06-01
US20240094768A1 (en) 2024-03-21
JP2022003410A (ja) 2022-01-11
KR102810509B1 (ko) 2025-05-22
JP7630553B2 (ja) 2025-02-17
CN105874525B (zh) 2021-04-16
JP2023113736A (ja) 2023-08-16
CN105874525A (zh) 2016-08-17
JP6956154B2 (ja) 2021-10-27
KR20230124102A (ko) 2023-08-24
TWI676125B (zh) 2019-11-01
KR20210129272A (ko) 2021-10-27
US20210132653A1 (en) 2021-05-06
JP2025076453A (ja) 2025-05-15
JP7288025B2 (ja) 2023-06-06
CN113031703B (zh) 2025-07-22
US20150146069A1 (en) 2015-05-28
CN113031703A (zh) 2021-06-25
KR102613466B1 (ko) 2023-12-14
US20230195165A1 (en) 2023-06-22
KR20160091409A (ko) 2016-08-02

Similar Documents

Publication Publication Date Title
US12443222B2 (en) Electronic device and driving method thereof
JP7718000B1 (ja) 電子機器
JP7792363B2 (ja) 電子機器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14866086

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20167017255

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 14866086

Country of ref document: EP

Kind code of ref document: A1

WWP Wipo information: published in national office

Ref document number: 1020257016046

Country of ref document: KR