WO2015078048A1 - 一种能消除可移动云纹的液晶显示器 - Google Patents

一种能消除可移动云纹的液晶显示器 Download PDF

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Publication number
WO2015078048A1
WO2015078048A1 PCT/CN2013/089041 CN2013089041W WO2015078048A1 WO 2015078048 A1 WO2015078048 A1 WO 2015078048A1 CN 2013089041 W CN2013089041 W CN 2013089041W WO 2015078048 A1 WO2015078048 A1 WO 2015078048A1
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gate line
pixel
adjacent
array substrate
columns
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English (en)
French (fr)
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郑华
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel

Definitions

  • the present invention relates to a pixel array substrate and a corresponding liquid crystal display, and more particularly to a pixel structure capable of eliminating moving moiré in a vertical alignment technique.
  • the existing liquid crystal pixel structure adopts a charge-sharing method to improve the dominant role of the big view.
  • the source component 106 and the sharing capacitor (Sharing-Capacitor) 107 pass through the contact hole (Hole) 108 and 109, conducting the components of the first metal layer and the second metal layer.
  • the pixel electrode layer above the corresponding array substrate forms an open area through which light can pass, and is divided into a main open area 110 and a secondary open area 111.
  • the upper and lower sides of the charging gate line 101 and the sharing gate line 102 may be positively biased or negatively biased due to the common electrode on the color filter substrate.
  • the liquid crystal is deflected to form the light leakage regions 112, 113, 114.
  • the charging gate line 101 and the sharing gate line 102 and the light leakage regions 112, 113, 114 on the upper and lower sides thereof are formed by a black matrix on the color filter substrate (Black Matrix) 201 is covered, so it does not affect the display of black screens.
  • Black Matrix Black Matrix
  • the array substrate of the vertically aligned liquid crystal panel and the color filter substrate are fixed together by the four-frame glue, Therefore, the relative displacement (Shift) of the two substrates can easily occur. As shown in FIG.
  • the light leakage region 114 under the shared gate line 102 is away from the secondary opening region 111 due to the shielding effect of the metal layer, and the light leakage region 112 above the charging gate line 101 is directly Adjacent to the main open area 110.
  • the downward displacement causes the light leakage in the light leakage area 112 to cause the bright group 301 to appear in the black screen. Since the light group 301 moves when the panel is tapped, it is called It is a moving moiré.
  • the prior art solution is to increase the width of the black matrix 201 on the color filter substrate, so that the black matrix 201 extends into the main opening region 110 for a shielding distance greater than the downward displacement length, thereby preventing the light leakage region from being exposed, thereby eliminating the movement. Moire.
  • the above drawback is that an increase in the width of the black matrix 201 causes a decrease in the pixel aperture ratio, thereby reducing the transmittance of the panel. Therefore, it is necessary to provide a pixel structure to solve the problems of the prior art.
  • Another object of the present invention is to provide an array substrate and a corresponding liquid crystal display, which can reduce the resistance and capacitance delay of the data line (RC) Delay), increase the power supply rate of the pixel.
  • RC data line
  • the present invention relates to an array substrate of a liquid crystal display, comprising: a substrate; a plurality of data lines disposed on the substrate; a plurality of gate line groups, Intersected on the data line; a plurality of common electrode lines intersecting the data line, each of the common electrode lines and the gate line group and two adjacent data lines define a pixel structure, and the pixel structure includes: Thin film transistor component, Electrically connected to the data line and the gate group; first and second pixel electrodes electrically connected to the thin film transistor component, disposed between the gate line group and the common electrical level line; Share the capacitor, Electrically connected to the gate line group, disposed between the gate line group and the pixel electrode.
  • the present invention provides an array substrate which is different from the prior art in repeatedly arranging pixel layouts, and arranges the pixel structures in a plurality of columns along the direction in which the data lines extend, adjacent to two columns.
  • the pixel structures are arranged in the opposite direction in order. Therefore, the charging gate lines of the adjacent two columns of pixel structures in which the gate line groups are close to each other are juxtaposed together, concentrated at the pixel boundary, and the gate line group and the pixel opening are made by using the respective shared capacitors in the two pixel structures.
  • the light leakage region between the regions is naturally away from the pixel opening region.
  • the present invention can eliminate moving moiré without losing the aperture ratio.
  • FIG. 1 is a schematic structural view of a pixel structure of the prior art
  • FIG. 2 is a schematic view showing an ideal blackout of a black matrix of a prior art array substrate and a color filter substrate;
  • FIG. 3 is a schematic view showing a downward displacement of a color filter substrate of the prior art with respect to an array substrate;
  • FIG. 4 is a schematic diagram of a pixel structure of the present invention.
  • FIG. 5 is a schematic view showing a pixel structure arrangement of an array substrate of the present invention.
  • Figure 6 is a comparison diagram of electrical characteristics of the present invention and prior art
  • FIG. 7 is a schematic view showing an ideal shading of a black matrix of an array substrate and a color filter substrate according to the present invention.
  • FIG. 8 is a schematic view showing the color filter substrate of the present invention being displaced downward relative to the array substrate.
  • the pixel structure 400 is an area in which two adjacent data lines 405, a charging gate line 401, and a common electric level line 403 are interleaved, wherein the data line 405 is used for transmitting.
  • the pixel structure 400 includes a thin film transistor component 406 electrically connected to the data line 405 and the charging gate line 401.
  • the first pixel electrode 410 and the second pixel electrode 411 are electrically connected to the thin film transistor component 406, respectively, for
  • the signal driving pixel is disposed between the charging gate line 401 and the common electric level line 403.
  • a shared gate line 402 and a shared capacitor 407 electrically connected to the shared gate line 402 are disposed between the charging gate line 401 and the pixel electrode 410.
  • the first pixel electrode 410 and the second pixel electrode 411 as described above correspondingly form a main opening area and a secondary opening area of each of the pixel structures.
  • the charging gate line 401 When the charging gate line 401 is turned on, the data line 405 transmits a corresponding image signal through the thin film transistor component 406, and charges the pixel electrodes 410, 411 of the main opening area and the secondary opening area; when the charging gate line 401 is closed, the gate line is shared 402 is then turned on, and the shared capacitor 407 electrically connected to the shared gate line 402 is electrically connected to the pixel electrodes 410 and 411 of the main open area and the secondary open area, and the pixel electrodes 410 and 411 of the main open area and the secondary open area are shared.
  • the charge that is originally filled is such that the voltages of the pixel electrodes 410, 411 of the main opening area and the secondary opening area are adjusted to an appropriate ratio.
  • the shared capacitor 407 is disposed between the shared gate line 401 and the first pixel electrode 410, and is disposed in the upper portion of the pixel structure 400 together with the charging gate line 401 and the shared gate line 402.
  • the charging gate line 401 and the sharing gate line 402 are disposed.
  • the light leakage regions 412, 413, 414 on both sides are thus limited to the upper portion of the shared capacitance 407, thereby making the light leakage region 414 naturally away from the main opening region and the secondary opening region.
  • the width of the shared capacitor may be between 6-30 um; the pixel electrode is a transparent electrode, and the material is preferably indium tin oxide (ITO, Indium Tin Oxide).
  • ITO Indium Tin Oxide
  • FIG. 5 is a schematic diagram of a pixel structure arrangement of a first preferred embodiment of the array substrate of the present invention.
  • the pixel structures disposed on the substrate 500 are arranged in a plurality of columns along the direction in which the data lines 405 extend, and the pixel structures of the adjacent two columns are in opposite directions.
  • the pixel structures 510, 520, 530, 540 on the array substrate 500 are arranged in a sequential order.
  • the charging gate lines of the adjacent two columns of pixel structures 520 and 530 are juxtaposed together, so that the shared gate lines 522, 532 and the shared capacitors 523 of the adjacent two columns of pixel structures 520 and 530.
  • the charging gate lines of the adjacent two columns of pixel structures 530 and 540 are further away from each other.
  • two types of charging gate lines can be selected from each other.
  • the pixel structures 530 and 540 share the same common electrode line 403, and the number of times the data line 405 on the entire array substrate 500 intersects the common electrode line 403 can be halved, that is, the parasitic capacitance formed by the data line 405 and the common electrode line 403 is reduced. half.
  • the array substrate structure 601 of the present invention has a lower resistance-capacitance delay than that of the prior art array substrate 602, and can obtain higher pixel charging. The rate can also reduce the cost of extra cable.
  • the invention also relates to a liquid crystal display comprising: An array substrate according to the first preferred embodiment to the second preferred embodiment; a color filter substrate opposite to the array substrate; and a liquid crystal layer vertically aligned with the array substrate and the color filter Between the light sheet substrates.
  • the color filter substrate further includes a black matrix 701 corresponding to the data lines 405, the charging gate lines 721 and 731, and the shared gate lines disposed on the array substrate.
  • 722 and 732, the shared capacitors 723 and 733, and the common electrode line 403 are used to shield light leakage from the respective pixel structures on the corresponding array substrate.
  • the data line 405, the charging gate lines 721 and 731, the sharing gate lines 722 and 732, the sharing capacitors 723 and 733, and the common electrode line 403 are originally opaque metal components, so that the black matrix 701 is not formed. The rate is reduced.
  • the pixel structures described above are arranged in a plurality of columns along the direction in which the data lines 405 extend, the pixel structures of the adjacent two columns are sequentially arranged in opposite directions, and naturally there are charging gate lines 721 of the adjacent two columns of pixel structures 720 and 730. And 731 are brought together, so that the shared gate lines 722 and 732 of the adjacent two columns of pixel structures 720 and 730 are concentrated together with the shared capacitors 723 and 733 at the pixel boundary, and the adjacent two columns of pixel structures 720 and 730 are used.
  • the shared capacitances 723, 733 cause the light leakage regions 724, 734 under the share gate lines 722, 732 to naturally move away from the open regions of the pixel structures 720 and 730.
  • the opening regions of the pixel structures 720 and 730 have a light blocking effect due to the positional arrangement of the shared capacitors 723 or 733.
  • the extent of displacement of the array substrate and the color filter substrate is generally between 0-30 um, and the width of the shared capacitors 723, 733 may be between 6-30 um. Therefore, by the pixel structure design of the present invention, it is not necessary to increase the width of the black matrix 701 to cover the light leakage, that is, the black matrix open area 702 in FIG. 7 can completely coincide with the pixel opening area, and the aperture ratio of the pixel structure is not increased.
  • the width of the black matrix is reduced to maximize the aperture ratio of the pixel. Therefore, the present invention can eliminate the moving moiré without losing the aperture ratio.
  • charging can be selected.
  • the two pixel structures 730 and 740 whose gate lines are distant from each other share the same common electrode line 403, and the number of times the data lines 405 on the entire array substrate 700 intersect the common electrode line 403 can be halved, that is, the data line 405 and the common electrode line.
  • the parasitic capacitance formed by 403 is halved in size. As shown in FIG.
  • the liquid crystal display 601 of the present invention has a lower resistance-capacitance delay of the data line than the liquid crystal display 602 of the prior art, so that not only a higher pixel charging rate but also an additional reduction can be obtained.
  • the cost of pulling the wire is not only a higher pixel charging rate but also an additional reduction.

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  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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Abstract

一种阵列基板，包括配置于一基板上的数据线（405）；门线组（401，402）以及共用电极线（403），互相交错于相邻两条数据线（405）以定义出一像素结构（400），像素结构（400）包括：薄膜晶体管组件（406）；第一像素电极（410）与第二像素电极（411），配置于门线组（401，402）以及共用电级线（403）之间；分担电容（407），配置于门线组（401，402）与像素电极（410，411）之间。像素结构（400）沿数据线（405）延伸的方向成多列排列，相邻两列的像素结构（400）以相反的方向依序排列，其中门线组（401，402）相互靠近的相邻两列像素结构（400）的充电门线（401）并列在一起，集中于像素交界处，利用分担电容（407）的位置配置使像素开口区远离漏光区（524，534），在不需要增加黑矩阵（701）的宽度下，解决了现有技术的移动云纹现象以及开口率过低的缺陷。

Description

一种能消除可移动云纹的液晶显示器 技术领域
本发明涉及像素阵列基板以及相应的液晶显示器，特别是涉及一种在垂直配向技术中可消除移动云纹的像素结构。
 背景技术
为了改善垂直配向(VA)液晶显示器的移动云纹（Movable Mura）现象，现有的液晶像素结构采用电荷分担（Charge-Sharing）的方式来改善大视角色偏。如图1所示，位于第一金属层的充电门线（Charging-Gate）101、分担门线（Sharing-Gate）102、共用电极线103和104以及位于第二金属层的数据线105、有源组件106以及分担电容（Sharing-Capacitor）107，通过接触孔(Hole) 108和109，使第一金属层与第二金属层的组件导通。对应阵列基板上方的像素电极层形成光线可通过的开口区，并且区分为主要开口区110与次要开口区111。然而，不论充电门线101与分担门线102是否被驱动，充电门线101与分担门线102上下两侧的区域都会因为彩色滤光片基板上的共用电极而造成正偏压或负偏压，引起液晶偏转，从而形成漏光区112、113、114。
如图2所示，在理想状态下，充电门线101和分担门线102及其上下两侧的漏光区112、113、114会由彩色滤光片基板上的黑矩阵(Black Matrix)201遮覆，因此不会对黑画面的显示造成影响。但实际上, 由于垂直配向的液晶面板的阵列基板与彩色滤光片基板是靠着四边框胶固定在一起, 因此很容易会发生两基板的相对位移（Shift）。如图1中的配置方式，由于分担电容107的存在，分担门线102下方的漏光区114因金属层的遮光作用而远离次要开口区111，而充电门线101上方的漏光区112则直接紧邻于主要开口区110。
然而，当彩色滤光片基板相对于阵列基板向上位移时，只要位移长度不超过分担电容107的宽度就不会产生漏光；但是，当彩色滤光片基板相对于阵列基板向下位移时，即使一个很小的位移都会导致漏光，如图3所示，向下位移造成漏光区112的漏光会导致黑画面时出现亮团301，由于该亮团301在拍击面板时会发生移动，因此称之为移动云纹。现有技术的解决方法是在彩色滤光片基板上的黑矩阵201增加宽度，使黑矩阵201向主要开口区110内延伸一段大于向下位移长度的遮光距离，避免漏光区露出，从而消除移动云纹。
上述的缺陷在于，黑矩阵201宽度的增加会导致像素开口率下降，从而降低面板的穿透率。故，有必要提供一种像素结构，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种阵列基板以及相应的液晶显示器，以解决垂直配向液晶显示器的移动云纹现象以及避免像素开口率下降的技术问题。
本发明的另一目的在于提供一种阵列基板以及相应的液晶显示器，可降低数据线的电阻电容延迟(RC Delay)，增加像素的供电率。
 技术解决方案
本发明涉及一种液晶显示器的阵列基板, 包括: 基板；多条数据线, 配置于所述基板上；多个门线组, 相交于所述数据线；多条共用电极线, 相交于所述数据线, 各条共用电极线与所述门线组以及相邻两条数据线定义出一像素结构, 所述像素结构包括：薄膜晶体管组件, 电连接于所述数据线以及所述门电组; 第一与第二像素电极, 电连接于所述薄膜晶体管组件, 配置于所述门线组以及所述共用电级线之间; 以及分担电容, 电连接于所述门线组, 配置于所述门线组与所述像素电极之间。
为达成本发明的前述目的，本发明提供一种有别于现有技术重复排列像素布局的阵列基板，利用将所述像素结构沿所述数据线延伸的方向成多列排列，相邻两列的所述像素结构以相反的方向依序排列。因此，其中会有门线组相互靠近的相邻两列像素结构的充电门线并列在一起，集中于像素交界处，并且利用两个像素结构中各自对应的分担电容使门线组与像素开口区之间的漏光区自然地远离像素开口区。即使彩色滤光片基板与阵列基板发生上下相对位移，像素开口区也会因为分担电容的位置配置而远离漏光区，因此不需要增加黑矩阵的宽度来覆盖漏光。通过本发明，黑矩阵的开口区可与像素开口区完全重合，像素结构的开口率不会因为增加黑矩阵的宽度而减小， 进而使像素结构的开口率达到最大化。因此，本发明可在不损失开口率的情况消除移动云纹。
 有益效果
在此种排列下，其中还会有门线组相互远离的相邻两列像素结构共用所述的共用电极线。整个阵列基板上的数据线相交共用电极线的次数可因此减半，意即数据线与共用电极线所形成的寄生电容大小减半。因此，不但可以有效的降低数据线的电阻电容延迟，提高像素的充电率，也可减少额外拉线的成本。
 附图说明
图1为现有技术的像素结构的结构示意图；
图2为现有技术的阵列基板与彩色滤光片基板的黑矩阵理想遮光示意图；
图3为现有技术的彩色滤光片基板相对于阵列基板向下位移的示意图；
图4为本发明的像素结构示意图；
图5为本发明的阵列基板的像素结构排列示意图；
图6为本发明与现有技术的电性比较图；
图7为本发明阵列基板与彩色滤光片基板的黑矩阵理想遮光示意图；
图8为本发明彩色滤光片基板相对于阵列基板向下位移的示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附图，用以式例本发明可以用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
图4绘示本发明数组基板的像素结构示意图，像素结构400是相邻两条数据线405、充电门线401以及共用电级线403互相交错形成的区域，其中，数据线405用以传送对应像素的信号；充电门线401用以传送门线信号；共用电级线403则用以提供像素的共用电压。像素结构400包括：薄膜晶体管组件406，电连接于数据线405与充电门线401；第一像素电极410与第二像素电极411，分别电连接于薄膜晶体管组件406，用以根据像对应素的信号驱动像素，配置于充电门线401以及共用电级线403之间。此外，在充电门线401和像素电极410之间还配置有分担门线402以及电连接于分担门线402的分担电容407。
如上所述的第一像素电极410以及第二像素电极411，对应形成各所述像素结构的主要开口区与次要开口区。当充电门线401开启时，数据线405通过薄膜晶体管组件406传送对应的影像信号，并且向主要开口区和次要开口区的像素电极410、411充电；当充电门线401关闭，分担门线402随即开启，电连接于分担门线402的分担电容407因此与主要开口区和次要开口区的像素电极410、411导通，分担掉主要开口区和次要开口区的像素电极410、411上原本充满的电荷，使主要开口区和次要开口区的像素电极410、411的电压调整到适当比例。
由于分担电容407配置于分担门线401和第一像素电极410之间，并且与充电门线401和分担门线402一起集中配置于像素结构400的上部位，充电门线401与分担门线402两侧的漏光区412、413、414因此局限于分担电容407的上方，进而使漏光区414自然地远离主要开口区和次要开口区。
其中所述分担电容的宽度可以是介于6-30um之间；所述像素电极为一透明电极，材料优选为氧化铟锡(ITO, Indium Tin Oxide)。
图5绘示本发明阵列基板第一优选实施例的像素结构排列示意图，配置于基板500上的像素结构沿数据线405延伸的方向成多列排列，相邻两列的像素结构以相反的方向依序排列，也就是说，在阵列基板500上的像素结构510、520、530、540呈现一上一下的依序排列。在此种排列方式下，其中会有相邻两列的像素结构520和530的充电门线并列在一起，使相邻两列的像素结构520和530的分担门线522、532与分担电容523、533一并集中于像素交界处，利用相邻两列的像素结构520和530中的分担电容523、533使分担门线522、532下方的漏光区524、534自然地远离像素电极520和530的开口区。
在此种排列方式下，其中还会有相邻两列的像素结构530和540的充电门线相互远离，于本发明的第二优选实施例中，可选择使充电门线相互远离的两个像素结构530和540共用同一条共用电极线403，整个阵列基板500上的数据线405相交共用电极线403的次数可因此减半，意即数据线405与共用电极线403形成的寄生电容大小减半。如图6所示，本发明所述的阵列基板结构601设计相较于现有技术的阵列基板602设计所量测到的数据线的电阻电容延迟较低，不但可得到更高的像素的充电率，也可减少额外拉线的成本。
本发明还涉及一种液晶显示器包括: 如本发明的第一优选实施例到第二优选实施例所述的阵列基板；彩色滤光片基板，与所述阵列基板相对；以及液晶层，垂直配向于所述阵列基板与所述彩色滤光片基板之间。
图7绘示本发明的第三优选实施例的示意图，其中所述彩色滤光片基板还包含黑矩阵701，对应配置于阵列基板上的数据线405、充电门线721和731、分担门线722和732、分担电容723和733以及共用电极线403上，用于遮蔽由对应阵列基板上的各像素结构的漏光。上述的数据线405、充电门线721和731、分担门线722和732、分担电容723和733以及共用电极线403原本即为不透光的金属组件，因此配置黑矩阵701并不会造成开口率的降低。
由于上述的像素结构沿数据线405延伸的方向成多列排列，相邻两列的像素结构以相反的方向依序排列，自然会有相邻两列的像素结构720和730的充电门线721、731靠在一起，使相邻两列的像素结构720和730的分担门线722、732与分担电容723、733一并集中于像素交界处，利用相邻两列的像素结构720和730中的分担电容723、733使分担门线722、732下方的漏光区724、734自然地远离像素结构720和730的开口区。
如图8所示，即使所述彩色滤光片基板与阵列基板发生上下相对位移，像素结构720和730的开口区也会因为分担电容723或733的位置配置而具有遮光效果。其中，阵列基板与彩色滤光片基板位移的程度一般在0-30um之间，而分担电容723、733的宽度可以是介于6-30um之间。因此通过本发明的像素结构设计，可不需要增加黑矩阵701的宽度来覆盖漏光，意即图7中的黑矩阵开口区702可与像素开口区自然完全重合，像素结构的开口率不会因为增加黑矩阵的宽度而减小，进而使像素的开口率达到最大化。因此，本发明可在不损失开口率的情况消除了移动云纹。
参见图7，利用此种像素结构排列的液晶显示器，其中还会有相邻两列的像素结构730和740的充电门线相互远离，于本发明的第四优选实施例中，可选择使充电门线相互远离的两个像素结构730和740共用同一条共用电极线403，整个阵列基板700上的数据线405相交共用电极线403的次数可因此减半，意即数据线405与共用电极线403形成的寄生电容大小减半。如图6所示，本发明的液晶显示器601相较于现有技术的液晶显示器602具有更低的数据线的电阻电容延迟，因此，不但可得到更高的像素的充电率，也可减少额外拉线的成本。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可做各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
 本发明的实施方式
工业实用性
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Claims (15)

  1. 一种阵列基板，包括：
    基板；
    多条数据线, 配置于所述基板上；
    多个门线组, 相交于所述数据线；
    多条共用电极线, 相交于所述数据线, 各条共用电极线与所述门线组以及相邻两条数据线定义出一像素结构, 所述像素结构包括:
    薄膜晶体管组件, 电连接于所述数据线以及所述门电组;
    第一与第二像素电极, 电连接于所述薄膜晶体管组件, 配置于所述门线组以及所述共用电级线之间; 以及
    分担电容, 电连接于所述门线组, 配置于所述门线组与所述像素电极之间; 其中
    所述门线组包括充电门线以及配置于所述充电门线与所述分担电容之间的分担门线;
    所述像素结构沿所述数据线延伸的方向成多列排列，相邻两列的所述像素结构以相反的方向依序排列；
    门线组相互靠近的所述相邻两列像素结构的充电门线并列在一起，集中于像素交界处；
    门线组相互远离的所述相邻两列像素结构共用所述的共用电极线。
  2. 一种阵列基板，包括：
    基板；
    多条数据线, 配置于所述基板上；
    多个门线组, 相交于所述数据线；
    多条共用电极线, 相交于所述数据线, 各条共用电极线与所述门线组以及相邻两条数据线定义出一像素结构, 所述像素结构包括:
    薄膜晶体管组件, 电连接于所述数据线以及所述门电组;
    第一与第二像素电极, 电连接于所述薄膜晶体管组件, 配置于所述门线组以及所述共用电级线之间; 以及
    分担电容, 电连接于所述门线组, 配置于所述门线组与所述像素电极之间。
  3. 根据权利要求1所述的阵列基板, 其特征在于, 所述门线组包括充电门线以及配置于所述充电门线与所述分担电容之间的分担门线。
  4. 根据权利要求2或3所述的阵列基板, 其特征在于, 所述像素结构沿所述数据线延伸的方向成多列排列，相邻两列的所述像素结构以相反的方向依序排列。
  5. 根据权利要求4所述的阵列基板, 其特征在于, 其中门线组相互靠近的相邻两列像素结构的充电门线并列在一起，集中于像素交界处。
  6. 根据权利要求4所述的阵列基板, 其特征在于, 其中门线组相互远离的相邻两列像素结构共用所述的共用电极线。
  7. 根据权利要求2所述的阵列基板, 其特征在于, 所述第一像素电极与第二像素电极各为一透明电极。
  8. 根据权利要求2所述的阵列基板, 其特征在于, 所述分担电容的宽度在6-30um之间。
  9. 一种液晶显示器, 包括:
    阵列基板;
    彩色滤光片基板, 与所述阵列基板相对; 以及
    液晶层, 配置于所述阵列基板与所述彩色滤光片基板之间；其特征在于, 所述阵列基板包括:
    基板；
    多条数据线, 配置于所述基板上；
    多个门线组, 相交于所述数据线；
    多条共用电极线, 相交于所述数据线, 各条共用电极线与所述门线组以及相邻两条数据线定义出一像素结构, 所述像素结构包括:
    薄膜晶体管组件, 电连接于所述数据线以及所述门电组;
    第一与第二像素电极, 电连接于所述薄膜晶体管组件, 配置于所述门线组以及所述共用电级线之间; 以及
    分担电容, 电连接于所述门线组, 配置于所述门线组与所述像素电极之间。
  10. 根据权利要求9所述的液晶显示器, 其特征在于, 所述门线组包括充电门线以及配置于所述充电门线与所述分担电容之间的分担门线。
  11. 根据权利要求9或10所述的液晶显示器, 其特征在于, 所述像素结构沿所述数据线延伸的方向成多列排列，相邻两列的所述像素结构以相反的方向依序排列。
  12. 根据权利要求11所述的液晶显示器, 其特征在于,其中门线组相互靠近的相邻两列像素结构的充电门线并列在一起，集中于像素交界处。
  13. 根据权利要求11所述的液晶显示器, 其特征在于, 其中门线组相互远离的相邻两列像素结构共用所述的共用电极线。
  14. 根据权利要求9所述的液晶显示器, 其特征在于, 所述第一像素电极与第二像素电极各为一透明电极。
  15. 根据权利要求9所述的液晶显示器, 其特征在于, 所述分担电容的宽度在6-30um之间。
PCT/CN2013/089041 2013-11-29 2013-12-11 一种能消除可移动云纹的液晶显示器 Ceased WO2015078048A1 (zh)

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