WO2015070464A1 - 提升多晶硅层均一性的多晶硅制作方法 - Google Patents

提升多晶硅层均一性的多晶硅制作方法 Download PDF

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WO2015070464A1
WO2015070464A1 PCT/CN2013/087360 CN2013087360W WO2015070464A1 WO 2015070464 A1 WO2015070464 A1 WO 2015070464A1 CN 2013087360 W CN2013087360 W CN 2013087360W WO 2015070464 A1 WO2015070464 A1 WO 2015070464A1
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amorphous silicon
silicon layer
layer
polysilicon
film thickness
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French (fr)
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张翔
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/06—Recrystallisation under a temperature gradient
    • C30B1/08—Zone recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials

Definitions

  • the present invention relates to display.
  • it relates to a polycrystal for improving the uniformity of a polysilicon layer.
  • the traditional video image display is mainly cathode ray tube CRT (Cartiode ray iubes); and the main difference between flat panel display is the change of weight and ⁇ , the thickness of the display is usually not more than 10cm, of course, there are other differences , such as the display principle, manufacturing, materials, technology and video image display drive technology.
  • Flat panel displays are fully planarized. Light, straight and power-saving, and the development of high resolution, low power consumption, high integration, but the traditional amorphous silicon is limited by its own characteristics can not meet the above requirements, as the best satisfaction of amorphous silicon
  • the flat panel shows the demand for He Liang, so low temperature polysilicon (ITPS) display technology has become the darling of the display field.
  • ITPS low temperature polysilicon
  • LPCVD Low Pressure Chemical Vapor Deposition
  • solid phase crystallization solid phase crystallization
  • metal induction metal induction
  • laser annealing the most widely used preparation method in the industry is laser annealing.
  • the amorphous silicon is recrystallized into polycrystalline silicon by the high temperature generated by the laser.
  • the crystallization effect can be obtained by adjusting the parameters of the laser, the size and uniformity of the polycrystalline silicon after annealing are obtained. It is not determined by the laser parameters.
  • the thickness of the chemical vapor deposition (CVD) film and the condition of hydrogen fluoride (HF) cleaning also affect the final laser annealing process.
  • FIG. 1 is a schematic flow chart of laser annealing treatment of an amorphous silicon layer in the prior art.
  • the amorphous silicon layer 100 (the thickness of the partial region 102 is thick) is only sprayed with hydrogen fluoride. 200 is cleaned, and the polysilicon layer 300 obtained by laser treatment after cleaning still has a problem of uniformity.
  • a cleaning unit is used to partially etch a thick layer of an amorphous silicon layer to improve the uniformity of the polysilicon layer obtained by laser annealing.
  • the present invention provides a method for fabricating polysilicon which improves the uniformity of a polysilicon layer, including the following steps:
  • Step 1 forming an amorphous silicon layer on the substrate
  • Step 2 dividing the amorphous silicon layer into a plurality of regions, measuring the film thickness of each region of the amorphous silicon layer; Step 3, comparing the measured film thickness of each region with a predetermined film thickness, for measuring the film thickness greater than the predetermined film thickness
  • the area is defined as a thick film thickness region and is marked;
  • Step 4 spraying an etchant on the amorphous silicon layer with a thick film thickness to clean a portion of the amorphous silicon layer at a region where the film thickness is thick, and simultaneously spraying pure water on other regions for cleaning, thereby making the amorphous
  • the film thickness of each region of the silicon layer tends to be uniform
  • Step 5 Laser-annealing the cleaned amorphous silicon layer to crystallize the amorphous silicon layer to form a polysilicon layer.
  • the step 1 further includes depositing a buffer layer on the substrate, and the amorphous silicon layer is formed on the buffer layer.
  • the buffer layer is formed by sequentially depositing silicon nitride and silicon oxide.
  • the film thickness of each region of the amorphous silicon layer is measured by a thickness measuring device in which a predetermined film thickness is stored in advance.
  • the amorphous silicon layer is cleaned by using a cleaning unit, and the cleaning unit comprises: a plurality of mutually parallel etching liquid lines, and a plurality of parallel pure water lines, the plurality of etching liquid lines
  • a plurality of nozzles are disposed on a side of the plurality of etching liquid pipes adjacent to the amorphous silicon layer, and the plurality of pure water pipes are disposed adjacent to one side of the amorphous silicon layer. There are several nozzles.
  • the etching solution is hydrogen fluoride.
  • the cleaned amorphous silicon layer is subjected to laser annealing treatment to clean the amorphous silicon layer by laser irradiation.
  • the invention also provides a method for manufacturing polysilicon which improves the uniformity of the polysilicon layer, comprising the following steps:
  • Step 1 forming an amorphous silicon layer on the substrate
  • Step 2 dividing the amorphous silicon layer into a plurality of regions, and measuring the film thickness of each region of the amorphous silicon layer;
  • Step 3 comparing the measured film thickness of each region with a predetermined film thickness, and defining a region having a film thickness greater than a predetermined film thickness as a thick film thickness region, and marking;
  • Step 4 spraying an etchant on the amorphous silicon layer with a thick film thickness to clean a portion of the amorphous silicon layer at a region where the film thickness is thick, and simultaneously spraying pure water on other regions for cleaning, thereby making the amorphous
  • the film thickness of each region of the silicon layer tends to be uniform
  • Step 5 performing laser annealing treatment on the cleaned amorphous silicon layer to crystallize the amorphous silicon layer to form a polysilicon layer;
  • the step 1 further includes depositing a buffer layer on the substrate, and the amorphous silicon layer is formed on the buffer layer;
  • the buffer layer is formed by sequentially depositing silicon nitride and silicon oxide;
  • a thickness measuring device is used to measure the film thickness of each region of the amorphous silicon layer, and the thickness measuring device stores a predetermined film thickness in advance;
  • the cleaning silicon unit is used to clean the amorphous silicon layer
  • the cleaning unit comprises: a plurality of mutually parallel etching liquid lines, and a plurality of parallel pure water lines, the plurality of etching liquids a pipeline is perpendicular to the plurality of pure water pipelines, and a plurality of nozzles are disposed on a side of the plurality of etching liquid pipelines adjacent to the amorphous silicon layer, and the plurality of pure water pipelines are adjacent to one of the amorphous silicon layers There are several nozzles on the side;
  • the etching solution is hydrogen fluoride.
  • the cleaned amorphous silicon layer is subjected to laser annealing treatment to form an amorphous silicon layer after laser irradiation.
  • the laser has a wavelength of 308 nm.
  • the substrate is a glass substrate.
  • the substrate is a plastic substrate.
  • the present invention provides a method for fabricating polycrystalline silicon which improves the uniformity of a polysilicon layer, and measures a film thickness of each region of the amorphous silicon layer by using a thickness measuring device to obtain a thick film thickness region, and uses a cleaning unit Providing an etchant to clean the amorphous silicon layer in a region having a thick film thickness to completely remove a portion of the amorphous silicon layer at a region where the film thickness is thick, and simultaneously providing pure water to clean other regions, thereby making the amorphous silicon layer
  • the film thicknesses tend to be uniform throughout to improve the uniformity of the polysilicon layer obtained by laser annealing.
  • FIG. 2 is a flow chart of a method for fabricating a polycrystalline silicon layer in a prior art
  • FIG. 2 is a flow chart showing a method for fabricating a polycrystalline silicon uniformity according to the present invention
  • FIG. 4 is a schematic view showing a film thickness measurement of an amorphous silicon layer by a thickness measuring device according to the present invention
  • FIG. 5 is a schematic view showing cleaning of an amorphous silicon layer by a cleaning unit in the present invention.
  • FIG. 6 is a schematic view of the amorphous silicon layer after cleaning according to the present invention.
  • Fig. 7 is a schematic view showing the laser annealing treatment of the cleaned amorphous silicon layer in the present invention. detailed description
  • the present invention provides a polysilicon step for improving the uniformity of the polysilicon layer.
  • Step 1. Form an amorphous layer 30 on the substrate 10.
  • the step further includes depositing a buffer layer 20 on the substrate 10, the amorphous silicon layer 30 being formed on the buffer layer 20.
  • Both the buffer layer 20 and the amorphous silicon layer 30 can be formed by deposition according to existing process conditions.
  • the buffer layer 20 is sequentially deposited by silicon nitride and silicon oxide, and is formed by 3 ⁇ 4.
  • Step 2 The amorphous silicon layer 30 is divided into a plurality of regions, and the film thickness of each region of the amorphous silicon layer 30 is measured.
  • the film thickness of each region of the amorphous silicon layer 30 is measured by the thickness measuring device 40, and a predetermined film thickness is previously stored in the thickness measuring device 40.
  • the amorphous silicon layer 30 can be divided into a plurality of regions in advance for measurement, and the more the number of regions, the better the uniformity of the finally processed polysilicon layer 60.
  • Step 3 Comparing the measured film thicknesses of the respective regions with a predetermined film thickness, and defining a region where the film thickness is larger than the predetermined film thickness is defined as a film thickness thick region 42, and is marked.
  • the film thickness obtained by measuring each region is compared with the average film thickness previously stored in the thickness measuring device 40, and a region having a film thickness larger than a predetermined film thickness is defined as a film thickness thick region 42 and is marked.
  • Step 4 spraying an etchant on the amorphous silicon layer 30 of the thick film region 42 to clean a portion of the amorphous silicon layer 30 at the thick portion 42 of the film thickness, and simultaneously spraying pure water on other regions for cleaning. Further, the film thickness of each region of the amorphous silicon layer 30 tends to be uniform.
  • the cleaning unit 50 includes: a plurality of mutually parallel etching liquid lines 52, and a plurality of mutually parallel pure water lines 54, the plurality of etching
  • the liquid line 52 is perpendicular to the plurality of pure water lines 54.
  • the plurality of nozzles 56 are disposed on a side of the engraved conduit 52 adjacent to the amorphous silicon layer 30.
  • the nozzles 56 can be automatically opened or automatically closed to control the spraying of the etching solution.
  • the plurality of pure A plurality of nozzles 56 are disposed on a side of the water line 54 adjacent to the amorphous silicon layer 30.
  • the nozzles 56 can be automatically opened or automatically closed to control the spraying of pure water, and further, the etchant can be separately sprayed to a thick film thickness region.
  • the amorphous silicon layer 30 of 42 is cleaned to etch away part of the amorphous silicon layer 30 at the thick film thickness region 42; at the same time, pure water is sprayed on other regions to weaken the diffusion from the thick film thickness region 42 to the other
  • the etching liquid in the region is cleaned, and the film thicknesses in the amorphous silicon layer 30' tend to be uniform.
  • the etching solution is hydrogen fluoride.
  • Step 5 performing laser annealing treatment on the cleaned amorphous silicon layer 30 to make an amorphous silicon layer
  • the 30' crystal forms a polysilicon layer 60.
  • the laser annealing treatment described above is to irradiate the amorphous silicon layer 30 after laser irradiation.
  • the cleaning unit 50 is cleaned as described above, so that the film thickness of the amorphous silicon layer 30' after cleaning is uniform, and the uniformity of the obtained polysilicon layer 60 after laser annealing treatment is obtained.
  • the properties are superior to those of the prior art processed polysilicon layer.
  • the present invention provides a method for fabricating polycrystalline silicon to improve the uniformity of a polysilicon layer.
  • the thickness measurement device is used to measure the film thickness of each region of the amorphous silicon layer to obtain a thick film thickness region, and the cleaning unit is used for etching.
  • the liquid cleans the amorphous silicon layer in the thick region of the film thickness to etch away part of the amorphous silicon layer at the thick film thickness region, and provides pure water to clean other regions, thereby making the amorphous silicon layer everywhere.
  • the film thickness tends to be uniform to improve the uniformity of the polysilicon layer obtained by laser annealing.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Optics & Photonics (AREA)

Abstract

本发明提供一种提升多晶硅层均一性的多晶硅制作方法，包括：步骤1、在基板（10）上形成非晶硅层（30）；步骤2、将非晶硅层（30）划分为数个区域，测量非晶硅层（30）各区域的膜厚；步骤3，将各区域的测量膜厚分别与预定膜厚进行比较，对于测量膜厚大于预定膜厚的区域定义为膜厚偏厚区域（42），并进行标示；步骤4、对膜厚偏厚区域（42）的非晶硅层（30）喷洒蚀刻液进行清洗，以蚀刻掉膜厚偏厚区域（42）处的部分非晶硅层（30），同时对其它区域喷洒纯水进行清洗，进而使得非晶硅层（30'）各区域的膜厚趋于一致；步骤5、对清洗后的非晶硅层（30'）进行激光退火处理，以使非晶硅层（30'）结晶形成多晶硅层（60）。

Description

晶珪层均- 性的多晶途制
本发明涉及显示. 尤其涉及一种提升多晶硅层均一性的多晶
器以其完全不同的显示和制造技
Figure imgf000003_0001
传统的视频图像显示器主 要为阴极射线管 CRT(Cartiode ray iubes); 而平板显示器与之的主要区别在 于重量和 · 方面的变化， 通常 示器的厚度不超.过 10cm， 当然还有其它的不同， 如显示原理、 制造. 料、 工艺以及视频图像显示驱 动方面的各项技术等。
平板显示器具有完全平面化。 轻、 直 省电等特点， 并朝着高分辨 低功耗、 高集成度的方向发展， 但传统的非晶硅受限于自身的特性无 法满足上述要求， 作为非晶硅的最佳 够满足平板显示 禾 · 良的需求， 因此低温多晶硅（ITPS )显示技术成为显示领域的宠 儿。
作为低温多晶硅显示技术的核心工艺环节， 多晶 ^
特性决定着显示器的性能。 目前已知的多晶硅制备方式包括： 低压化学气 相、沉积 ( Low Pressure Chemical Vapor Deposition, LPCVD ) 、 固相结晶、 金属诱导和激光退火等。 目前业界应用最为广泛的制备方式是激光退火工 艺， 通过激光产生的高温将非晶硅熔融重结晶成多晶硅 虽然通过调节激 光的参数可以使得结晶效果得 但退火后的多晶硅晶粒大小及均- 性并非由激光参数唯一决定， 其中化学气相沉积 （ Chemical Vapor Deposition, CVD )膜的厚度及氟化氢 ( HF ) 清洗的状况同样会影响到最 终激光退火的工艺效果。
请参阅图 1， 其为现有技术中对非晶硅层进行激光退火处理的流程示 意图， 对均一性不是很好的非晶硅层 100 (存在部分区域 102 的膜厚偏 厚）仅喷氟化氢 200进行清洗， 清洗后经过激光处理得到的多晶硅层 300 仍存在均一性问题。 发明内容 本发明的目的在于提供一种提升多晶硅层均一性的多晶硅制作方法， 采用清洗单元对非晶硅层的膜厚偏厚区域进行部分蚀刻， 以提升激光退火 得到的多晶硅层的均一性。
为实现上述目的， 本发明提供一种提升多晶硅层均一性的多晶硅制作 方法， 包括以下步骤：
步骤 1、 在基板上形成非晶硅层；
步骤 2、 将非晶硅层划分为数个区域， 测量非晶硅层各区域的膜厚； 步骤 3、 将各区域的测量膜厚分别与预定膜厚进行比较， 对于测量膜 厚大于预定膜厚的区域定义为膜厚偏厚区域， 并进行标示；
步骤 4、 对膜厚偏厚区域的非晶硅层喷洒蚀刻液进行清洗， 以蚀刻掉 膜厚偏厚区域处的部分非晶硅层， 同时对其它区域喷洒纯水进行清洗， 进 而使得非晶硅层各区域的膜厚趋于一致；
步骤 5、 对清洗后的非晶硅层进行激光退火处理， 以使非晶硅层结晶 形成多晶硅层。
所述步骤 1 中还包括在所述基板上沉积形成一缓冲层， 所述非晶硅层 形成于所述缓冲层上。
所述缓冲层由氮化硅及氧化硅依次沉积而形成。
所述步骤 2 中釆用一厚度测量装置测量非晶硅层各区域的膜厚， 所述 厚度测量装置内预先储存有预定膜厚。
所述步骤 4 中采用清洗单元对非晶硅层进行清洗， 该清洗单元包括： 数根相互平行的蚀刻液管路、 以及数根相互平行的纯水管路， 所述数根蚀 刻液管路与所述数根纯水管路相垂直， 所述数根蝕刻液管路靠近非晶硅层 的一侧设有数个喷嘴， 所述数根纯水管路靠近非晶硅层的一侧设有数个喷 嘴。
所述蚀刻液为氟化氢。
所述步骤 5 中对清洗后的非晶硅层进行激光退火处理为采用激光照射 清洗后的非晶硅层。
Figure imgf000004_0001
本发明还提供一种提升多晶硅层均一性的多晶硅制作方法， 包括以下 步骤：
步骤 1、 在基板上形成非晶硅层；
步糠 2、 将非晶硅层划分为数个区域， 测量非晶硅层各区域的膜厚； 步骤 3、 将各区域的测量膜厚分别与预定膜厚进行比较， 对于测量膜 厚大于预定膜厚的区域定义为膜厚偏厚区域， 并进行标示；
步骤 4、 对膜厚偏厚区域的非晶硅层喷洒蚀刻液进行清洗， 以蚀刻掉 膜厚偏厚区域处的部分非晶硅层， 同时对其它区域喷洒纯水进行清洗， 进 而使得非晶硅层各区域的膜厚趋于一致；
步骤 5、 对清洗后的非晶硅层进行激光退火处理， 以使非晶硅层结晶 形成多晶硅层；
其中， 所述步骤 1 中还包括在所述基板上沉积形成一缓冲层， 所述非 晶硅层形成于所述緩冲层上；
其中， 所述缓冲层由氮化硅及氧化硅依次沉积而形成；
其中， 所述步骤 2 中采用一厚度测量装置测量非晶硅层各区域的膜 厚， 所述厚度测量装置内预先储存有预定膜厚；
其中， 所述步骤 4 中采用清洗单元对非晶硅层进行清洗， 该清洗单元 包括： 数根相互平行的蚀刻液管路、 以及数根相互平行的纯水管路， 所述 数根蚀刻液管路与所述数根纯水管路相垂直， 所述数根蚀刻液管路靠近非 晶硅层的一侧设有数个喷嘴， 所述数根纯水管路靠近非晶硅层的一侧设有 数个喷嘴；
其中， 所述蚀刻液为氟化氢。
所述步骤 5 中对清洗后的非晶硅层进行激光退火处理为采用激光照射 清洗后的非晶硅层。
所述激光的波长为 308nm。
所述基板为玻璃基板。
所述基板为塑料基板。
本发明的有益效果： 本发明提供一种提升多晶硅层均一性的多晶硅制 作方法， 釆用厚度测量装置测量非晶硅层各区域的膜厚， 以得出膜厚偏厚 区域， 并采用清洗单元提供蚀刻液对膜厚偏厚区域的非晶硅层进行清洗， 以独刻掉膜厚偏厚区域处的部分非晶硅层， 同时提供纯水对其它区域进行 清洗， 进而使得非晶硅层各处的膜厚趋于一致， 以提升激光退火得到的多 晶硅层的均一性。
为了能更进一步了解本发明的特征以及技术内容， 请参阅以下有关本 发明的详细说明与附图， 然而附图仅提供参考与说明用， 并非用来对本发 明加以限制。 附图说明 下面结合附图， 通过对本发明的具体实施方式详细描述， 将使本发明 的技术方案及其它有益效果显而易见。
附图中，
图 为现有技术中对非晶硅层进行激光退火处理的流程示意图； 图 2为本发明提升多晶硅均一性的多晶硅制作方法的流程图； 图 3为本发明中清洗单元的结构示意图；
图 4为本发明中厚度测量装置测量非晶硅层膜厚的示意图；
图 5为本发明中清洗单元对非晶硅层进行清洗的示意图；
图 6为本发明中非晶硅层清洗后的示意图；
图 7为本发明中对清洗后的非晶硅层进行激光退火处理示意图。 具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果， 以下结合本发明 的优选实施例及其附图进行详细描述。
参阅图 2 „fj¾ 7, 本发明提供一种提升多晶硅层均一性的多晶硅制 步骤 1、 在基板 10上形成非晶圭层 30。
该步骤还包括在所述.基板 10上沉积形成一緩冲层 20, 所述非晶硅层 30形成于所述緩冲层 20上。
该缓冲层 20及非晶硅层 30均可按照现有工艺条件沉积而形成。 所述 缓沖层 20由氮化硅及氧化硅依次沉积 ,¾形成。
步骤 2、 将非晶硅层 30划分为数个区域， 测量非晶硅层 30各区域的 膜厚。
在本步骤中， 采用厚度测量装置 40测量非晶硅层 30各区域的膜厚， 该厚度测量装置 40内预先储存有预定膜厚。
本实施例中可以将非晶硅层 30提前划分成多个区域进行测量， 且区 域的个数越多， 最后加工得到的多晶硅层 60 的均一性就越好。 但在本实 施例中， 为了提高测量速度且兼顾测量质量， 优选的， 可将非晶硅层 30 划分为 16个或 32个区域进行测量。
步骤 3、 将各区域的测量膜厚分别与预定膜厚进行比较， 对于测量膜 厚大于预定膜厚的区域定义为膜厚偏厚区域 42, 并进行标示。
将测量各区域得到的膜厚与预先储存于厚度测量装置 40 中的平均膜 厚相比较， 将膜厚大于预定膜厚的区域定义为膜厚偏厚区域 42， 并进行标 示。 步骤 4、 对膜厚偏厚区域 42的非晶硅层 30喷洒蚀刻液进行清洗， 以 蚀刻掉膜厚偏厚区域 42 处的部分非晶硅层 30, 同时对其它区域喷洒纯水 进行清洗， 进而使得非晶硅层 30各区域的膜厚趋于一致。
该步骤中采用清洗单元 50对非晶硅层 30进行清洗， 该清洗单元 50 包括： 数根相互平行的蚀刻液管路 52、 以及数根相互平行的纯水管路 54, 所述数根蚀刻液管路 52与所述数根纯水管路 54相垂直。 所述.数根 ; 刻液管路 52靠近非晶硅层 30的一侧设有数个喷嘴 56， 该些喷嘴 56可自 动打开也可以自动关闭以控制喷洒蚀刻液； 同样， 所述数根纯水管路 54 靠近非晶硅层 30的一侧设有数个喷嘴 56， 该些喷嘴 56可自动打开也可以 自动关闭以控制喷洒纯水， 进而， 可以控制单独喷洒蚀刻液对膜厚偏厚区 域 42的非晶硅层 30进行清洗， 以蚀刻掉膜厚偏厚区域 42处的部分非晶 硅层 30; 同时对其它区域喷洒纯水以弱化从所述膜厚偏厚区域 42扩散至 该其它区域的蚀刻液而进行清洗， 进而使得非晶硅层 30'各处的膜厚趋于 一致。 在本实施例中， 所述蚀刻液为氟化氢。
步骤 5、 对清洗后的非晶硅层 30，进行激光退火处理， 以使非晶硅层
30'结晶形成多晶硅层 60。
上述的激光退火处理即为采用激光 70 照射清洗后的非晶硅层 30。 所 在激光退火处理前， 釆用清洗单元 50 按上述方法进行清洗后， 使得 清洗后的非晶硅层 30'各处的膜厚趋于一致， 进而激光退火处理后， 得到 的多晶硅层 60的均一性优于现有技术处理得到的多晶硅层的均一性。
综上所述， 本发明提供一种提升多晶硅层均一性的多晶硅制作方法， 采用厚度测量装置测量非晶硅层各区域的膜厚， 以得出膜厚偏厚区域， 并 采用清洗单元提供蚀刻液对膜厚偏厚区域的非晶硅层进行清洗， 以蚀刻掉 膜厚偏厚区域处的部分非晶硅层， 同时提供纯水对其它区域进行清洗， 进 而使得非晶硅层各处的膜厚趋于一致， 以提升激光退火得到的多晶硅层的 均一性。
以上所述， 对于本领域的普通技术人员来说， 可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形， 而所有这些改变和变形 都应属于本发明权利要求的保护范围„

Claims

】、 一种提升多晶硅层均一性的多晶硅制作方法， 包括以下步骤： 步骤 1、 在基板上形成非晶硅层；
步骤 2、 将非晶硅层划分为数个区域， 测量非晶硅层各区域的膜厚； 步骤 3、 将各区域的测量膜厚分别与预定膜厚进行比较， 对于测量膜 厚大于预定膜厚的区域定义为膜厚偏厚区域， 并进行标示；
步骤 4、 对膜厚偏厚区域的非晶硅层喷洒蚀刻液进行清洗， 以蚀刻掉 膜厚偏厚区域处的部分非晶硅层， 同时对其它区域喷洒纯水进行清洗， 进 而使得非晶硅层各区域的膜厚趋于一致；
步骤 5、 对清洗后的非晶硅层进行激光退火处理， 以使非晶硅层结晶 形成多晶政层。
2、 如权利要求 1 所述的提升多晶硅层均一性的多晶硅制作方法， 其 中， 所述步骤 1 中还包括在所述基板上沉积形成一缓冲层， 所述非晶硅层 形成于所述缓冲层上。
3、 如权利要求 2 所述的提升多晶硅层均一性的多晶硅制作方法, 其 中， 所述缓冲层由氮化硅及氧化硅依次沉积而形成。
4、 如权利要求 1 所述的提升多晶硅层均一性的多晶硅制作方法， 其 中， 所述步骤 2 中采用一厚度测量装置测量非晶硅层各区域的膜厚， 所述 厚度测量装置内预先储存有预定膜厚。
5、 如权利要求 1 所述的提升多晶硅层均一性的多晶硅制作方法， 其 中， 所述步骤 4 中采用清洗单元对非晶硅层进行清洗， 该清洗单元包括： 数根相互平行的蚀刻液管路、 以及数根相互平行的纯水管路， 所述数根蚀 刻液管路与所述数根纯水管路相垂直， 所述数根蚀刻液管路靠近非晶硅层 的一侧设有数个喷嘴， 所述数根纯水管路靠近非晶硅层的一侧设有数个喷 嘴。
6、 如权利要求 5 所述的提升多晶硅层均一性的多晶硅制作方法， 其 中， 所述蚀刻液为氟化氢。
7、 如权利要求 1 所述的提升多晶硅层均一性的多晶硅制作方法， 其 中， 所述步骤 5 中对清洗后的非晶硅层进行激光退火处理为采用激光照射 清洗后的非晶硅层。
8、 如权利要求 7 所述的提升多晶硅层均一性的多晶硅制作方法， 其 中， 所述激光的波长为 308nm。
9 , 如权利要求 1 所述的提升多晶硅层均一性的多晶硅制作方法， 其 中， 所述基板为玻璃基板》
10、 如权利要求 1 所述的提升多晶硅层均一性的多晶硅制作方法， 其 中， 所述基板为塑料基板。
11、 一种提升多晶硅层均一性的多晶硅制作方法， 包括以下步骤： 步骤 1、 在基板上形成非晶硅层；
步骤 2、 将非晶硅层划分为数个区域， 测量非晶硅层各区域的膜厚； 步骤 3、 将各区域的测量膜厚分别与预定膜厚进行比较， 对于测量膜 厚大于预定膜厚的区域定义为膜厚偏厚区域， 并进行标示；
步骤 4、 对膜厚偏厚区域的非晶硅层喷洒蚀刻液进行清洗， 以蚀刻掉 膜厚偏厚区域处的部分非晶硅层， 同时对其它区域喷洒纯水进行清洗， 进 而使得非晶硅层各区域的膜厚趋于一致；
步骤 5、 对清洗后的非晶硅层进行激光退火处理， 以使非晶硅层结晶 形成多晶硅层；
其中， 所述步骤 1 中还包括在所述 板上沉积形成一緩冲层， 所述非 晶硅层形成于所述緩冲层上；
其中， 所述緩沖层由氮化硅及氧化硅依次沉积而形成；
其中， 所述步骤 2 中采用一厚度测量装置测量非晶硅层各区域的膜 厚， 所述厚度测量装置内预先储存有预定膜厚；
其中， 所述步骤 4 中采用清洗单元对非晶硅层进行清洗， 该清洗单元 包括： 数根相互平行的蚀刻液管路、 以及数根相互平行的纯水管路， 所述 数根蚀刻液管路与所述数根纯水管路相垂直， 所述数根蚀刻液管路靠近非 晶硅层的一侧设有数个喷嘴， 所述数根纯水管路靠近非晶硅层的一侧设有 数个喷嘴；
其中， 所述蚀刻液为氟化氢。
12 , 如权利要求 11 所述的提升多晶硅层均一性的多晶硅制作方法， 其中， 所述步骤 5 中对清洗后的非晶硅层进行激光退火处理为采用激光照 射清洗后的非晶硅层。
13 , 如权利要求 12 所述的提升多晶硅层均一性的多晶硅制作方法， 其中， 所述激光的波长为 308nm。
14 , 如权利要求 11 所述的提升多晶硅层均一性的多晶硅制作方法， 其中， 所述基 为玻璃基板。
】5、 如权利要求 11 所述的提升多晶硅层均一性的多晶硅制作方法， 其中， 所述基板为塑料基板。
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