WO2015062124A1 - 触屏感应装置及其制作方法、触屏感应组件 - Google Patents

触屏感应装置及其制作方法、触屏感应组件 Download PDF

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Publication number
WO2015062124A1
WO2015062124A1 PCT/CN2013/087077 CN2013087077W WO2015062124A1 WO 2015062124 A1 WO2015062124 A1 WO 2015062124A1 CN 2013087077 W CN2013087077 W CN 2013087077W WO 2015062124 A1 WO2015062124 A1 WO 2015062124A1
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Prior art keywords
color film
sensing device
electrode
tft
capacitor electrode
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English (en)
French (fr)
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熊源
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/130,498 priority Critical patent/US20150116606A1/en
Publication of WO2015062124A1 publication Critical patent/WO2015062124A1/zh
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels

Definitions

  • the invention relates to the field of liquid crystal display technology, in particular to a touch screen sensing device, a manufacturing method thereof and a touch screen sensing component.
  • Sensing devices for capacitive touch screen technology require sensing capacitors to sense the position of the contact points.
  • the sensing capacitor is disposed outside the display panel of the capacitive sensing device.
  • this method increases the thickness of the capacitive sensing device, and at the same time, it is easy to reduce the touch screen effect of the capacitive sensing device due to changes in the external environment.
  • the defect caused by the external sensing capacitor is solved by providing an additional area in the capacitive sensing device to form the sensing capacitor, which reduces the pixel aperture ratio of the capacitive sensing device.
  • the main object of the present invention is to provide a touch screen sensing device and a manufacturing method thereof, which aim to improve the pixel aperture ratio of the capacitive touch screen sensing device, thereby improving the display effect of the capacitive touch screen sensing device.
  • the invention provides a touch screen sensing device comprising a common electrode and a COA structure, the common electrode being located above the COA structure, the COA structure comprising a TFT And a color film stack disposed on the TFT, the common electrode is disposed opposite to the top of the color film stack; a capacitor electrode is disposed between the common electrode and the COA structure; a transverse section at the top of the color film laminate and an extension extending from at least one end of the lateral section covering the side of the color film laminate; a gap is disposed between the common electrode and the COA structure to enable the There is a gap between the lateral segment and the capacitor electrode.
  • an insulating layer is disposed between the color film laminate and the capacitor electrode.
  • the capacitor electrode is provided with an insulating layer.
  • the color film stack comprises a first color film, a second color film and a third color film which are sequentially stacked on the TFT;
  • the extension segment includes a tilt corresponding to the third color film and the second color film.
  • a protruding section extending from the inclined section and covering the surface of the first color film.
  • the COA structure further includes a pixel region disposed in parallel with the TFT, a surface layer of the pixel region is a pixel electrode, and the pixel electrode is electrically disconnected from the capacitor electrode.
  • the invention also provides a method for fabricating a touch screen sensing device, wherein the touch screen sensing device comprises a COA structure, and the COA structure comprises a TFT and a color film stack disposed on the TFT, and the manufacturing method comprises:
  • the capacitor electrode Removing the etched substrate to a photoresist, forming a capacitor electrode on the color film stack, the capacitor electrode comprising a lateral segment between the top of the color film stack and the common electrode and extending from one end of the lateral segment An extended section of the side of the color film laminate;
  • the substrate coated with the optical gap material is exposed, and the exposed substrate is developed to form a gap on the common electrode so as to have a gap between the lateral segment and the capacitor electrode.
  • the method before the step of applying a photoresist on the conductive material and exposing the substrate after coating the photoresist, the method further comprises:
  • a conductive material is coated on the insulating layer.
  • the etched substrate is photoresisted, and a capacitor electrode is formed on the color film stack, the capacitor electrode includes a lateral segment between the top of the color film stack and the common electrode and is laterally
  • the method further comprises:
  • An insulating material is coated on the substrate on which the capacitor electrode is formed to form an insulating layer on the capacitor electrode.
  • the color film stack comprises a first color film, a second color film and a third color film which are sequentially stacked on the TFT;
  • the extension segment includes a tilt corresponding to the third color film and the second color film.
  • a protruding section extending from the inclined section and covering the surface of the first color film.
  • the COA structure further includes a pixel region disposed in parallel with the TFT, a surface layer of the pixel region is a pixel electrode, and the pixel electrode is electrically disconnected from the capacitor electrode.
  • the invention also provides a touch screen sensing component, comprising a backlight module and a liquid crystal touch screen sensing device, the touch screen sensing device comprising a common electrode and a COA structure, the common electrode being located above the COA structure, the COA structure Including TFT And a color film stack disposed on the TFT, the common electrode is disposed opposite to the top of the color film stack; a capacitor electrode is disposed between the common electrode and the COA structure; a transverse section at the top of the color film laminate and an extension extending from at least one end of the lateral section covering the side of the color filter laminate; a gap is disposed between the common electrode and the COA structure to enable the lateral direction There is a gap between the segment and the capacitor electrode; the light emitted by the backlight module is emitted through the touch panel sensing device.
  • the invention forms the sensing capacitance of the touch screen sensing device through the lateral section of the capacitor electrode and the common electrode, thereby improving the pixel aperture ratio of the capacitive touch screen sensing device, thereby improving the display effect of the capacitive touch screen sensing device.
  • FIG. 1 is a schematic structural view of a preferred embodiment of a touch panel sensing device of the present invention
  • FIG. 2 is a schematic flow chart of a preferred embodiment of a method for fabricating a touch panel sensing device of the present invention.
  • FIG. 1 is a schematic structural view of a touch screen sensing device according to a preferred embodiment of the present invention.
  • the touch screen sensing device is specifically described as follows:
  • the touch screen sensing device includes a common electrode 1 and a COA structure 2, the common electrode 1 is located above the COA structure 2, and the COA structure 2 includes a TFT 3 and a color film laminate 4 disposed on the TFT 3.
  • the common electrode 1 is disposed opposite to the top of the color film stack 4;
  • a capacitor electrode 5 is disposed between the common electrode 1 and the COA structure 2;
  • the capacitor electrode 5 is disposed at the color film a transverse section 6 at the top of the laminate 4 and an extension 7 extending from at least one end of the transverse section 6 covering the side of the color film laminate 4;
  • a gap 8 is disposed between the common electrode 1 and the COA structure 2 to A gap is provided between the common electrode 1 and the capacitor electrode 5, and the height of the spacer 8 is set by the nature of the touch panel sensing device.
  • the extension 7 of the capacitor electrode 5 may extend from the A end of the transverse section 6, or may extend from the B end of the transverse section 6, or may also extend from the A end and the B end simultaneously, in this embodiment, The extension 7 of the capacitor electrode 5 preferably extends from the A end of the transverse section 6.
  • the color film laminate 4 includes a first color film 10, a second color film 11 and a third color film 12 which are sequentially stacked on the TFT 3;
  • the extended segment 7 includes a corresponding third color film 12 and
  • the inclined film 13 provided by the two color film 11 and the convex portion 14 extending from the inclined portion 13 and covering the surface of the first color film 10 are provided.
  • the transverse section 6 of the capacitor electrode 5 and the common electrode 1 constitute the sensing capacitance of the touch panel sensing device, thereby increasing the pixel aperture ratio of the capacitive touch screen sensing device, thereby improving the display effect of the capacitive touch panel sensing device.
  • the COA structure 2 further includes a pixel region 15 disposed in parallel with the TFT 3, the surface layer of the pixel region 15 is a pixel electrode 16, and the pixel electrode 16 is electrically disconnected from the capacitor electrode 5.
  • a storage capacitor 17 is disposed on the TFT side substrate, and the electrode 18 of the storage capacitor 17 is electrically connected to the pixel electrode 16. By electrically disconnecting the capacitor electrode 5 from the pixel electrode 16, the storage capacitor 17 is prevented from being affected during the touch screen operation, thereby improving the display effect of the touch panel sensing device.
  • the common electrode 1 is coated on another glass substrate 19, and a liquid crystal (not shown) is poured between the common electrode 1 and the pixel region 15 and a backlight (not shown)
  • the emitted light passes through the pixel region 15, enters the liquid crystal layer 20 between the common electrode 1 and the pixel region 15, passes through the common electrode 1, and is emitted.
  • the material of the insulating layer 9 is preferably SiNx, and may be any other suitable insulating material.
  • the material of the capacitor electrode 5 is preferably a transparent conductive material, such as indium tin oxide or indium zinc oxide, or any other suitable conductive material. .
  • FIG. 2 is a schematic flow chart of a preferred embodiment of a method for fabricating a touch screen sensing device of the present invention.
  • the touch screen sensing device comprises a COA structure, the COA structure comprises a TFT and a color film stack disposed on the TFT, and the manufacturing method of the touch screen sensing device comprises:
  • Step S11 coating a conductive material on the substrate provided with the COA structure
  • Step S12 applying a photoresist on the conductive material, and exposing the substrate after coating the photoresist;
  • Step S13 developing the exposed substrate to etch the developed substrate
  • Step S14 removing the etched substrate to a photoresist, forming a capacitor electrode on the color film stack, the capacitor electrode comprising a lateral section at the top of the color film stack and extending from one end of the lateral section to cover the color film An extension of the side of the laminate;
  • Step S15 applying a light gap material on the substrate on which the common electrode is disposed;
  • step S16 the substrate coated with the optical gap material is exposed, and the exposed substrate is developed to form a gap on the common electrode so as to have a gap between the lateral segment and the capacitor electrode.
  • an insulating material on the glass substrate provided with the COA structure to form an insulating layer on the glass substrate provided with the COA structure
  • the specific step of forming the insulating layer is Coating an insulating material on the glass substrate provided with the COA structure, and hardening the insulating layer coated on the substrate to form an insulating layer on the capacitor electrode, and the hardening insulating layer may be baked Or any suitable hardening method such as ultraviolet light irradiation.
  • the specific step of providing a capacitor electrode between the common electrode and the COA structure is: sequentially coating a conductive material and a photoresist on a substrate coated with an insulating layer, and sequentially applying a conductive material by using a specific mask pair. Irradiating ultraviolet rays with a specific region of the substrate after the photoresist, that is, exposing the substrate after sequentially coating the conductive material and the photoresist, and developing the exposed substrate to form a capacitor electrode between the common electrode and the COA structure .
  • step S15 and the step S16 may also be before or after any of the steps S11 to S14.
  • the specific reticle is opened at a specific position of the reticle according to the characteristics of the photoresist. If the photoresist is a negative photoresist, the photoresist irradiated by the ultraviolet light in a specific opening region will not be washed away by the development. If the photoresist is a positive photoresist, the photoresist that is irradiated with ultraviolet light in a specific opening region will be washed away.
  • the specific mask is provided with an opening at a lateral section and an extended section of the capacitor electrode; if the photoresist is a positive photoresist, the specific mask is Opening a position other than the lateral section of the capacitor electrode and the extension; forming a capacitor electrode in the above manner, the capacitor electrode including a lateral section at the top of the color film laminate and extending from one end of the lateral section to cover the color film The extension of the side of the laminate.
  • the insulating layer may also be disposed on the capacitor electrode, and the specific step of providing an insulating layer on the capacitor electrode is: coating an insulating material on the glass substrate provided with the capacitor electrode, and coating the substrate on the substrate.
  • the insulating layer is subjected to a hardening treatment to form an insulating layer on the capacitor electrode, and the hardened insulating layer may be in any suitable hardening manner such as baking or ultraviolet light irradiation.
  • the color film stack includes a first color film, a second color film, and a third color film which are sequentially stacked on the TFT 3;
  • the extension segment includes a tilt corresponding to the third color film and the second color film.
  • a protruding section extending from the inclined section and covering the surface of the first color film.
  • the extension of the capacitor electrode may extend from the A end of the lateral segment, or may extend from the B end of the lateral segment, or may also extend from the A end and the B end simultaneously.
  • the capacitor electrode The extended section preferably extends from the A end of the transverse section.
  • the transverse capacitance of the capacitive electrode and the common electrode constitute the sensing capacitance of the touch screen sensing device, thereby improving the pixel aperture ratio of the capacitive touch screen sensing device, thereby improving the display effect of the capacitive touch screen sensing device.
  • the COA structure further includes a pixel region disposed in parallel with the TFT 3, a surface layer of the pixel region is a pixel electrode, and the pixel electrode is electrically disconnected from the capacitor electrode.
  • a storage capacitor is disposed on the TFT side substrate, and an electrode of the storage capacitor is electrically connected to the pixel electrode.
  • the common electrode is coated on another glass substrate, and liquid crystal is injected between the common electrode and the pixel region, and light emitted by the backlight passes through the pixel region, enters the common electrode and the pixel.
  • the liquid crystal layer between the regions is emitted after passing through the common electrode.
  • the material of the insulating layer is preferably SiNx, and may be any other suitable insulating material.
  • the capacitor electrode is preferably a transparent conductive material such as indium tin oxide or indium zinc oxide, and may be any other suitable conductive material.
  • the present invention also provides a touch screen sensing assembly comprising a backlight module and a touch screen sensing device, the touch screen sensing device comprising a common electrode and a COA structure, the common electrode being located above the COA structure, the COA structure comprising TFT And a color film stack disposed on the TFT, the common electrode is disposed opposite to the top of the color film stack; a capacitor electrode is disposed between the common electrode and the COA structure; a transverse section at the top of the color film laminate and an extension extending from at least one end of the lateral section covering the side of the color filter laminate; a gap is disposed between the common electrode and the COA structure to enable the lateral direction There is a gap between the segment and the capacitor electrode.
  • the light emitted by the backlight module is emitted through the touch screen sensing device.
  • the touch screen sensing device of the touch panel sensing component of the present invention is the touch panel sensing device in the above embodiment.
  • the touch screen sensing component of the present invention improves the capacitive touch screen sensing device by forming a sensing capacitance of the touch panel sensing device through the lateral section of the capacitor electrode and the common electrode relative to the existing touch panel sensing component.
  • the pixel aperture ratio further increases the display effect of the capacitive touch screen sensing device.

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Abstract

本发明公开了一种触屏感应装置及其制作方法、触屏感应组件，该触屏感应装置包括公用电极和COA结构，所述公用电极位于所述COA结构上方，所述COA结构包括TFT及设置在TFT上的彩膜叠层，所述公用电极与所述彩膜叠层顶部相对设置；在所述公用电极与所述COA结构之间设置有电容电极；所述电容电极包括位于所述彩膜叠层顶部的横向段和由横向段的至少一端延伸、覆盖所述彩膜叠层侧面的延展段；所述公用电极与所述COA结构之间设置有间隙子，以使所述横向段与所述电容电极之间具有间隙。本发明通过电容电极的横向段与公用电极构成触屏感应装置的感应电容，提高了电容触屏感应装置的像素开口率，进而提高电容触屏感应装置的显示效果。

Description

触屏感应装置及其制作方法、触屏感应组件
技术领域
本发明涉及到液晶显示技术领域，特别涉及到一种触屏感应装置及其制作方法、触屏感应组件。
背景技术
电容触屏技术的感应装置，都需要感应电容来感知接触点的位置。将感应电容设置在电容感应装置的显示面板外部。但这种方式会增加电容感应装置的厚度，同时容易因外部环境变化而降低电容感应装置的触屏效果。
现有，解决上述感应电容外置带来的缺陷的方式为：在电容感应装置内设置额外的区域来形成感应电容，这种方式会降低电容感应装置的像素开口率。
发明内容
本发明的主要目的为提供一种触屏感应装置及其制作方法，旨在实现提高电容触屏感应装置的像素开口率，进而提高电容触屏感应装置的显示效果。
本发明提出一种触屏感应装置，包括公用电极和COA结构，所述公用电极位于所述COA结构上方，所述COA结构包括TFT 及设置在TFT上的彩膜叠层，所述公用电极与所述彩膜叠层顶部相对设置；在所述公用电极与所述COA结构之间设置有电容电极；所述电容电极包括位于所述彩膜叠层顶部的横向段和由横向段的至少一端延伸、覆盖所述彩膜叠层侧面的延展段；所述公用电极与所述COA结构之间设置有间隙子，以使所述横向段与所述电容电极之间具有间隙。
优选地，所述彩膜叠层与所述电容电极之间设置有绝缘层。
优选地，所述电容电极上设置有绝缘层。
优选地，所述彩膜叠层包括依次叠加设置在TFT上的第一彩膜、第二彩膜和第三彩膜；所述延展段包括对应第三彩膜、第二彩膜设置的倾斜段和由倾斜段延伸、覆盖第一彩膜表面设置的凸设段。
优选地，所述COA结构还包括与所述TFT并列设置的像素区域，所述像素区域的表层为像素电极，且所述像素电极与所述电容电极电性断开。
本发明还提出一种触屏感应装置的制作方法，其特征在于，该触屏感应装置包括COA结构，所述COA结构包括TFT及设置在TFT上的彩膜叠层，该制作方法包括：
在设置有COA结构的基板上涂布导电材质；
在所述导电材质上涂布光阻，并对涂布光阻后的基板进行曝光；
将曝光后的基板进行显影，将显影后的基板进行蚀刻；
将蚀刻后的基板去光阻，在所述彩膜叠层上形成电容电极，所述电容电极包括位于所述彩膜叠层顶部与公用电极之间的横向段和由横向段一端延伸、覆盖彩膜叠层侧面的延展段；
在所述设置有公用电极的基板上涂布有光间隙材质；
对涂布光间隙材质的基板进行曝光，并将曝光后的基板进行显影，在所述公用电极上形成间隙子，以使所述横向段与所述电容电极之间具有间隙。
优选地，所述在所述导电材质上涂布光阻，并对涂布光阻后的基板进行曝光的步骤之前，该方法还包括：
在所述形成导电材质后的基板上涂布绝缘材料，以在所述电容电极上形成绝缘层；
在所述绝缘层上涂布导电材质。
优选地，所述将蚀刻后的基板去光阻，在所述彩膜叠层上形成电容电极，所述电容电极包括位于所述彩膜叠层顶部与公用电极之间的横向段和由横向段一端延伸、覆盖彩膜叠层侧面的延展段的步骤之后，该方法还包括：
在形成电容电极后的基板上涂布绝缘材料，以在所述电容电极上形成绝缘层。
优选地，所述彩膜叠层包括依次叠加设置在TFT上的第一彩膜、第二彩膜和第三彩膜；所述延展段包括对应第三彩膜、第二彩膜设置的倾斜段和由倾斜段延伸、覆盖第一彩膜表面设置的凸设段。
优选地，所述COA结构还包括与所述TFT并列设置的像素区域，所述像素区域的表层为像素电极，且所述像素电极与所述电容电极电性断开。
本发明还提出一种触屏感应组件，包括背光模组及液晶触屏感应装置，所述触屏感应装置包括公用电极和COA结构，所述公用电极位于所述COA结构上方，所述COA结构包括TFT 及设置在TFT上的彩膜叠层，所述公用电极与所述彩膜叠层顶部相对设置；在所述公用电极与所述COA结构之间设置有电容电极；所述电容电极包括位于所述彩膜叠层顶部的横向段和由横向段至少一端延伸、覆盖所述彩膜叠层侧面的延展段；所述公用电极与所述COA结构之间设置有间隙子，以使所述横向段与所述电容电极之间具有间隙；背光模组发出的光线通过触屏感应装置后射出。
相对现有技术，本发明通过电容电极的横向段与公用电极构成触屏感应装置的感应电容，提高了电容触屏感应装置的像素开口率，进而提高电容触屏感应装置的显示效果。
附图说明
图1为本发明触屏感应装置的较佳实施例的结构示意图；
图2为本发明触屏感应装置的制作方法的较佳实施例的流程示意图。
本发明目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
具体实施方式
应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
如图1所示，本发明提出一种触屏感应装置，图1为本发明触屏感应装置的较佳实施例的结构示意图，触屏感应装置具体介绍如下：
参考图1，该触屏感应装置包括公用电极1和COA结构2，所述公用电极1位于所述COA结构2的上方，所述COA结构2包括TFT3及设置在TFT3上的彩膜叠层4，所述公用电极1与所述彩膜叠层4的顶部相对设置；在所述公用电极1与所述COA结构2之间设置有电容电极5；所述电容电极5包括位于所述彩膜叠层4顶部的横向段6和由横向段6的至少一端延伸、覆盖彩膜叠层4侧面的延展段7；所述公用电极1与所述COA结构2之间设置有间隙子8，以使所述公用电极1与所述电容电极5之间具有间隙，所述间隙子8的高度由触屏感应装置的性质来设定。通过在公用电极1与所述COA结构2之间设置有间隙子8，以使所述公用电极1与所述电容电极5之间具有间隙，在对触屏感应装置进行感应触摸时，解决外力压制导致感应电容短路的问题。所述彩膜叠层4和所述电容电极5之间设置有绝缘层9，或者在所述电容电极5上设置有绝缘层9。所述电容电极5的延展段7可以由横向段6的A端延伸，也可以是由横向段6的B端延伸，也还可以是同时由A端和B端延伸，在本实施例中，所述电容电极5的延展段7优选为由横向段6的A端延伸。
进一步地，所述彩膜叠层4包括依次叠加设置在TFT3上的第一彩膜10、第二彩膜11和第三彩膜12；所述延展段7包括对应第三彩膜12和第二彩膜11设置的倾斜段13和由倾斜段13延伸、覆盖第一彩膜10表面设置的凸设段14。
通过电容电极5的横向段6与公用电极1构成触屏感应装置的感应电容，提高了电容触屏感应装置的像素开口率，进而提高电容触屏感应装置的显示效果。
进一步地，所述COA结构2还包括与所述TFT3并列设置的像素区域15，所述像素区域15的表层为像素电极16，且所述像素电极16与所述电容电极5电性断开。在所述TFT侧基板上设置有存储电容17，所述存储电容17的电极18与所述像素电极16电性相接。通过将电容电极5与像素电极16电性断开，防止触屏操作时影响到存储电容17，进而提高触屏感应装置的显示效果。
进一步地，所述公用电极1涂布在另一个玻璃基板19上，在所述公用电极1和所述像素区域15之间灌入液晶（图中未示出），背光源（图中未示出）发出的光经过所述像素区域15，进入公用电极1和所述像素区域15之间的液晶层20，经过公用电极1之后射出。
进一步地，为了提高电容电极5与公用电极1之间的绝缘作用，所述绝缘层9的材质优选为SiNx，也还可以是其他任意适用的绝缘材质。
进一步地，为了降低对触屏感应装置的透光率的影响，所述电容电极5的材质优选为透明导电材料，例如，氧化铟锡或氧化铟锌，也还可以是其他任意适用的导电材料。
参考图2，本发明还提出一种触屏感应装置的制作方法，图2为本发明触屏感应装置的制作方法的较佳实施例的流程示意图。触屏感应装置包括COA结构，所述COA结构包括TFT及设置在TFT上的彩膜叠层，触屏感应装置的制作方法包括：
步骤S11，在设置有COA结构的基板上涂布导电材质；
步骤S12，在所述导电材质上涂布光阻，并对涂布光阻后的基板进行曝光；
步骤S13，将曝光后的基板进行显影，将显影后的基板进行蚀刻；
　　　步骤S14，将蚀刻后的基板去光阻，在所述彩膜叠层上形成电容电极，所述电容电极包括位于所述彩膜叠层顶部的横向段和由横向段一端延伸、覆盖彩膜叠层侧面的延展段；
步骤S15，在所述设置有公用电极的基板上涂布有光间隙材质；
步骤S16，对涂布光间隙材质的基板进行曝光，并将曝光后的基板进行显影，在所述公用电极上形成间隙子，以使所述横向段与所述电容电极之间具有间隙。
具体的，在本实施例中，优选为在设置有COA结构的玻璃基板上涂布绝缘材料，以在所述设置有COA结构的玻璃基板上形成绝缘层，所述形成绝缘层的具体步骤为：在设置有COA结构的玻璃基板上涂布绝缘材料，对涂布在基板上的绝缘层进行硬化处理，以在所述电容电极上形成绝缘层，所述硬化绝缘层的方式可以是烘烤或紫外光照射等任意适用的硬化方式。
所述在所述公用电极和COA结构之间设置电容电极的具体步骤为：在涂布有绝缘层的基板上依次叠加涂布导电材质和光阻，通过采用特定的光罩对依次涂布导电材质和光阻后的基板的特定区域照射紫外线，即对依次叠加涂布导电材质和光阻后的基板进行曝光过程，将曝光后的基板进行显影，以在所述公用电极和COA结构之间形成电容电极。
在所述设置有公用电极的基板上涂布有光间隙材质；对涂布光间隙材质的基板进行曝光，并将曝光后的基板进行显影，在所述公用电极上形成间隙子，以使所述横向段与所述电容电极之间具有间隙，所述间隙子的高度由触屏感应装置的性质来设定。通过在公用电极与所述COA结构之间设置有间隙子，以使所述公用电极与所述电容电极之间具有间隙，在对触屏感应装置进行感应触摸时，防止外力压制导致感应电容短路的问题。所述步骤S15和步骤S16还可以是在步骤S11至步骤S14中任意步骤之前或之后。
所述特定的光罩为根据光阻的特性在光罩的特定位置进行开口，若光阻为负性光阻，即特定开口区域内的被紫外光照射的光阻将不会被显影洗掉；若光阻为正性光阻，即特定开口区域内的被紫外线照射的光阻将会被显影洗掉。
在本实施例中，若光阻为负性光阻，所述特定的光罩在电容电极的横向段和延展段位置设置开口；若光阻为正性光阻，所述特定的光罩在电容电极的横向段和延展段之外的位置设置开口；按照上述方式制作出电容电极，所述电容电极包括位于所述彩膜叠层顶部的横向段和由横向段的一端延伸、覆盖彩膜叠层侧面的延展段。所述绝缘层也还可以是设置在所述电容电极上，在所述电容电极上设置绝缘层的具体步骤为：在设置有电容电极的玻璃基板上涂布绝缘材料，对涂布在基板上的绝缘层进行硬化处理，以在所述电容电极上形成绝缘层，所述硬化绝缘层的方式可以是烘烤或紫外光照射等任意适用的硬化方式。
进一步地，所述彩膜叠层包括依次叠加设置在TFT3上的第一彩膜、第二彩膜和第三彩膜；所述延展段包括对应第三彩膜和第二彩膜设置的倾斜段和由倾斜段延伸、覆盖第一彩膜表面设置的凸设段。所述电容电极的延展段可以由横向段的A端延伸，也可以是由横向段的B端延伸，也还可以是同时由A端和B端延伸，在本实施例中，所述电容电极的延展段优选为由横向段的A端延伸。
通过电容电极的横向段与公用电极构成触屏感应装置的感应电容，提高了电容触屏感应装置的像素开口率，进而提高电容触屏感应装置的显示效果。
进一步地，所述COA结构还包括与所述TFT3并列设置的像素区域，所述像素区域的表层为像素电极，且所述像素电极与所述电容电极电性断开。在所述TFT侧基板上设置有存储电容，所述存储电容的电极与所述像素电极电性相接。通过将电容电极与像素电极电性隔开，防止触屏操作时影响到存储电容，进而提高触屏感应装置的显示效果。
进一步地，所述公用电极涂布在另一个玻璃基板上，在所述公用电极和所述像素区域之间灌入液晶，背光源发出的光经过所述像素区域，进入公用电极和所述像素区域之间的液晶层，经过公用电极之后射出。
进一步地，为了提高电容电极与公用电极之间的绝缘作用，所述绝缘层的材质优选为SiNx，也还可以是其他任意适用的绝缘材质。
进一步地，为了降低对液晶显示组件的透光率的影响，所述电容电极优选为透明导电材料，例如，氧化铟锡或氧化铟锌，也还可以是其他任意适用的导电材料。
本发明还提出一种触屏感应组件，包括背光模组及触屏感应装置，所述触屏感应装置包括公用电极和COA结构，所述公用电极位于所述COA结构上方，所述COA结构包括TFT 及设置在TFT上的彩膜叠层，所述公用电极与所述彩膜叠层顶部相对设置；在所述公用电极与所述COA结构之间设置有电容电极；所述电容电极包括位于所述彩膜叠层顶部的横向段和由横向段至少一端延伸、覆盖所述彩膜叠层侧面的延展段；所述公用电极与所述COA结构之间设置有间隙子，以使所述横向段与所述电容电极之间具有间隙。背光模组发出的光线通过触屏感应装置后射出。
本发明触屏感应组件的触屏感应装置为上述实施例中的所述触屏感应装置，其详细结构及制作方法可参照前述实施例，在此不作赘述。由于采用前述触屏感应装置，本发明触屏感应组件相对现有的触屏感应组件而言，通过电容电极的横向段与公用电极构成触屏感应装置的感应电容，提高了电容触屏感应装置的像素开口率，进而提高电容触屏感应装置的显示效果。
以上所述仅为本发明的优选实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (19)

  1. 一种触屏感应装置，包括公用电极和COA结构，所述公用电极位于所述COA结构上方，所述COA结构包括TFT 及设置在TFT上的彩膜叠层，所述公用电极与所述彩膜叠层顶部相对设置；其特征在于，在所述公用电极与所述COA结构之间设置有电容电极；所述电容电极包括位于所述彩膜叠层顶部的横向段和由横向段的至少一端延伸、覆盖所述彩膜叠层侧面的延展段；所述公用电极与所述COA结构之间设置有间隙子，以使所述横向段与所述电容电极之间具有间隙。
  2. 根据权利要求1所述的触屏感应装置，其特征在于，所述彩膜叠层包括依次叠加设置在TFT上的第一彩膜、第二彩膜和第三彩膜；所述延展段包括对应第三彩膜、第二彩膜设置的倾斜段和由倾斜段延伸、覆盖第一彩膜表面设置的凸设段。
  3. 根据权利要求2所述的触屏感应装置，其特征在于，所述COA结构还包括与所述TFT并列设置的像素区域，所述像素区域的表层为像素电极，且所述像素电极与所述电容电极电性断开。
  4. 根据权利要求1所述的触屏感应装置，其特征在于，所述彩膜叠层与所述电容电极之间设置有绝缘层。
  5. 根据权利要求4所述的触屏感应装置，其特征在于，所述彩膜叠层包括依次叠加设置在TFT上的第一彩膜、第二彩膜和第三彩膜；所述延展段包括对应第三彩膜、第二彩膜设置的倾斜段和由倾斜段延伸、覆盖第一彩膜表面设置的凸设段。
  6. 根据权利要求5所述的触屏感应装置，其特征在于，所述COA结构还包括与所述TFT并列设置的像素区域，所述像素区域的表层为像素电极，且所述像素电极与所述电容电极电性断开。
  7. 根据权利要求1所述的触屏感应装置，其特征在于，所述电容电极上设置有绝缘层。
  8. 根据权利要求7所述的触屏感应装置，其特征在于，所述彩膜叠层包括依次叠加设置在TFT上的第一彩膜、第二彩膜和第三彩膜；所述延展段包括对应第三彩膜、第二彩膜设置的倾斜段和由倾斜段延伸、覆盖第一彩膜表面设置的凸设段。
  9. 根据权利要求8所述的触屏感应装置，其特征在于，所述COA结构还包括与所述TFT并列设置的像素区域，所述像素区域的表层为像素电极，且所述像素电极与所述电容电极电性断开。
  10. 一种触屏感应装置的制作方法，其特征在于，该触屏感应装置包括COA结构，所述COA结构包括TFT及设置在TFT上的彩膜叠层，该制作方法包括：
    　　　在设置有COA结构的基板上涂布导电材质；
    　　　在所述导电材质上涂布光阻，并对涂布光阻后的基板进行曝光；
    　　　将曝光后的基板进行显影，将显影后的基板进行蚀刻；
    　　　将蚀刻后的基板去光阻，在所述彩膜叠层上形成电容电极，所述电容电极包括位于所述彩膜叠层顶部与公用电极之间的横向段和由横向段一端延伸、覆盖彩膜叠层侧面的延展段；
    　　　在所述设置有公用电极的基板上涂布光间隙材质；
    　　　对涂布有光间隙材质的基板进行曝光，并将曝光后的基板进行显影，在所述公用电极上形成间隙子，以使所述横向段与所述电容电极之间具有间隙。
  11. 根据权利要求10所述的触屏感应装置的制作方法，其特征在于，所述彩膜叠层包括依次叠加设置在TFT上的第一彩膜、第二彩膜和第三彩膜；所述延展段包括对应第三彩膜、第二彩膜设置的倾斜段和由倾斜段延伸、覆盖第一彩膜表面设置的凸设段。
  12. 根据权利要求11所述的触屏感应装置的制作方法，其特征在于，所述COA结构还包括与所述TFT并列设置的像素区域，所述像素区域的表层为像素电极，且所述像素电极与所述电容电极电性断开。
  13. 根据权利要求10所述的触屏感应装置的制作方法，其特征在于，所述在所述导电材质上涂布光阻，并对涂布光阻后的基板进行曝光的步骤之前，该方法还包括：
    　　　在所述形成导电材质后的基板上涂布绝缘材料，以在所述电容电极上形成绝缘层；
    　　　在所述绝缘层上涂布导电材质。
  14. 根据权利要求13所述的触屏感应装置的制作方法，其特征在于，所述彩膜叠层包括依次叠加设置在TFT上的第一彩膜、第二彩膜和第三彩膜；所述延展段包括对应第三彩膜、第二彩膜设置的倾斜段和由倾斜段延伸、覆盖第一彩膜表面设置的凸设段。
  15. 根据权利要求14所述的触屏感应装置的制作方法，其特征在于，所述COA结构还包括与所述TFT并列设置的像素区域，所述像素区域的表层为像素电极，且所述像素电极与所述电容电极电性断开。
  16. 根据权利要求10所述的触屏感应装置的制作方法，其特征在于，所述将蚀刻后的基板去光阻，在所述彩膜叠层上形成电容电极，所述电容电极包括位于所述彩膜叠层顶部与公用电极之间的横向段和由横向段一端延伸、覆盖彩膜叠层侧面的延展段的步骤之后，该方法还包括：
    　　　在形成电容电极后的基板上涂布绝缘材料，以在所述电容电极上形成绝缘层。
  17. 根据权利要求16所述的触屏感应装置的制作方法，其特征在于，所述彩膜叠层包括依次叠加设置在TFT上的第一彩膜、第二彩膜和第三彩膜；所述延展段包括对应第三彩膜、第二彩膜设置的倾斜段和由倾斜段延伸、覆盖第一彩膜表面设置的凸设段。
  18. 根据权利要求17所述的触屏感应装置的制作方法，其特征在于，所述COA结构还包括与所述TFT并列设置的像素区域，所述像素区域的表层为像素电极，且所述像素电极与所述电容电极电性断开。
  19. 一种触屏感应组件，其特征在于，包括背光模组及液晶触屏感应装置，所述触屏感应装置包括公用电极和COA结构，所述公用电极位于所述COA结构上方，所述COA结构包括TFT 及设置在TFT上的彩膜叠层，所述公用电极与所述彩膜叠层顶部相对设置；在所述公用电极与所述COA结构之间设置有电容电极；所述电容电极包括位于所述彩膜叠层顶部的横向段和由横向段的至少一端延伸、覆盖所述彩膜叠层侧面的延展段；所述公用电极与所述COA结构之间设置有间隙子，以使所述横向段与所述电容电极之间具有间隙；背光模组发出的光线通过触屏感应装置后射出。
PCT/CN2013/087077 2013-10-30 2013-11-13 触屏感应装置及其制作方法、触屏感应组件 Ceased WO2015062124A1 (zh)

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