WO2015060245A1 - Pâte d'argent et dispositif à semi-conducteur utilisant cette dernière et procédé de production pour pâte d'argent - Google Patents
Pâte d'argent et dispositif à semi-conducteur utilisant cette dernière et procédé de production pour pâte d'argent Download PDFInfo
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- WO2015060245A1 WO2015060245A1 PCT/JP2014/077830 JP2014077830W WO2015060245A1 WO 2015060245 A1 WO2015060245 A1 WO 2015060245A1 JP 2014077830 W JP2014077830 W JP 2014077830W WO 2015060245 A1 WO2015060245 A1 WO 2015060245A1
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- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
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Definitions
- the semiconductor element is die-bonded and bonded by heat curing to obtain a semiconductor device.
- a method is mentioned.
- the characteristics required for the silver paste are broadly classified into the contents relating to the construction method at the time of bonding and the contents relating to the physical properties of the silver sintered body after bonding.
- the silver particles having a particle diameter of 1 ⁇ m to 20 ⁇ m are desirably plate-like silver particles or a mixture of plate-like silver particles and spherical silver particles.
- the present invention is also a method for producing a silver paste, wherein a silver paste is obtained by mixing silver particles and a solvent, wherein the silver particles have a particle diameter of 1 ⁇ m to 20 ⁇ m and a boiling point under atmospheric pressure.
- a method for producing a silver paste using silver particles coated with a protective agent having a temperature of less than 130 ° C. and having a particle diameter of 1 nm to 300 nm.
- 4 is a TG-DTA measurement result of the silver nanoparticles of Comparative Example 1.
- 4 is a SEM photograph of a connection cross section of a semiconductor member of Comparative Example 1.
- 4 is a SEM photograph of a connection cross section of a semiconductor member of Comparative Example 2.
- 10 is a SEM photograph of a connection cross section of a semiconductor member of Comparative Example 3.
- the silver paste according to this embodiment is a silver paste containing silver particles and a solvent, and the silver particles are silver particles having a particle diameter of 1 ⁇ m to 20 ⁇ m, and a protective material having a boiling point of less than 130 ° C. under atmospheric pressure. And silver particles having a particle diameter of 1 nm to 300 nm coated with an agent.
- the silver particles used in the present embodiment are particles coated with silver particles having a particle diameter of 1 ⁇ m to 20 ⁇ m (hereinafter “silver microparticles”) and a protective agent having a boiling point of less than 130 ° C. under atmospheric pressure. Silver particles having a diameter of 1 nm to 300 nm (hereinafter “silver nanoparticles”).
- the shape of the silver microparticle and the silver nanoparticle is not particularly limited, and a shape that increases the filling property when the silver microparticle and the silver nanoparticle are mixed may be used as appropriate.
- plate-like silver particles, spherical silver particles, a mixture thereof, and the like can be used as appropriate.
- a silver microparticle and a silver nanoparticle both a single crystal and a polycrystal can be used.
- the desorption temperature of the protective agent for silver microparticles and silver nanoparticles is preferably 300 ° C. or lower, and 250 ° C. The following is more desirable.
- the protective agent for silver nanoparticles is an organic compound having a boiling point of less than 130 ° C., desirably an organic compound having a boiling point of 120 ° C. or less, more desirably an organic compound having a boiling point of 110 ° C. or less.
- the lower limit of the boiling point of the protective agent is not particularly limited, but is, for example, 70 ° C. or higher.
- the boiling point in this specification means the boiling point under atmospheric pressure (1013 hPa).
- the mass ratio can be obtained from the mass change before and after the measurement by heating the silver nanoparticles or silver microparticles to a temperature at which the desorption of the protective agent is sufficiently performed.
- Example 1 silver nanoparticles coated with N, N-dimethylethylenediamine (Tokyo Chemical Industry Co., Ltd., boiling point 107 ° C.) as a protective agent, and silver microparticles (AgC239 (AgC239) coated with dodecanoic acid as a protective agent Fukuda Metal Foil Co., Ltd.)) is used in combination.
- TG-DTA measurement results of silver nanoparticles and silver microparticles are shown in FIGS. 1 and 2, respectively.
- FIG. 1 shows that N, N-dimethylethylenediamine on the surface of the silver nanoparticles is desorbed at about 225.degree.
- FIG. 2 shows that dodecanoic acid on the surface of the silver microparticles is desorbed at about 250 ° C.
- FIG. 3 shows the results of TG-DTA measurement of a silver paste prepared by mixing these silver particles.
- the temperature at which the desorption of the organic substance from the silver paste is completed is about 250 ° C., and the weight loss is about 9.5% by weight.
- the desorption temperature of the organic substance in TG-DTA measurement is 250 ° C., but if it is heated to some degree even at about 200 ° C., the same weight loss (9.5% by weight) as when heated at 250 ° C. is obtained.
- the silver paste of Example 1 can be sintered at about 200 ° C. with the organic matter completely removed. Also, since the difference in desorption temperature between the protective agent for silver nanoparticles and the protective agent for silver microparticles is as small as 25 ° C., the silver nanoparticles and the silver microparticles can be sintered almost simultaneously, and a dense silver sintered body Can be formed. As a result, the characteristics (die shear strength, volume resistivity and thermal conductivity) of the silver sintered body are also good.
- the solvent in this embodiment is not particularly limited as long as it is liquid at normal temperature (20 ° C.), and a known solvent can be used.
- Solvents can be selected from alcohols, aldehydes, carboxylic acids, ethers, esters, amines, monosaccharides, polysaccharides, linear hydrocarbons, fatty acids, aromatics, etc. It is also possible to use a combination of a plurality of the above solvents.
- the boiling point of the solvent is not particularly limited, but is preferably 100 ° C to 350 ° C, more preferably 130 ° C to 300 ° C, and further preferably 150 ° C to 250 ° C.
- the boiling point of the solvent is 100 ° C. or higher, it is possible to prevent the solvent from volatilizing at room temperature when the silver paste is used, and as a result, it is possible to ensure the viscosity stability, applicability, and the like of the silver paste.
- the boiling point of the solvent is 350 ° C. or less, it is possible to suppress the solvent from being evaporated in the silver sintered body at a temperature at which the semiconductor element is connected to the support member. The characteristics can be kept better.
- silver nanoparticles, silver microparticles, and a solvent are collectively or divided into a stirrer, a separator, What is necessary is just to combine dispersion
- the method for heating and sintering the silver paste a known method can be used. In addition to external heating by a heater, an ultraviolet lamp, laser, microwave, or the like can be suitably used.
- the heating temperature of the silver paste is preferably equal to or higher than the temperature at which the protective agent, solvent and additive are desorbed from the system. Specifically, the range of the heating temperature is desirably 150 ° C. or more and 300 ° C. or less, and more desirably 150 ° C. or more and 250 ° C. or less.
- a general semiconductor member is connected by setting the heating temperature to 300 ° C. or lower, damage to the member can be avoided, and by setting the heating temperature to 150 ° C. or higher, Desorption is likely to occur.
- the process for heating the silver paste can be appropriately determined.
- sintering is performed at a temperature exceeding the boiling point of the solvent, pre-heating at a temperature lower than the boiling point of the solvent, and after performing the sintering after volatilizing the solvent to some extent, a denser silver sintered body Easy to get.
- the rate of temperature increase when heating the silver paste is not particularly limited when sintering is performed below the boiling point of the solvent. In the case of sintering at a temperature exceeding the boiling point of the solvent, it is desirable to set the heating rate to 1 ° C./second or less, or to perform a preheating step.
- AgC239 (Fukuda Metal Foil Co., Ltd.) was used as the silver microparticles.
- the treatment for coating AgC239 with dodecanoic acid as a protective agent was performed as follows. That is, first, 100 g of AgC239, 10 g of dodecanoic acid (Wako Pure Chemical Industries, Ltd., boiling point 299 ° C.) and 500 mL of 1-propanol (Wako Pure Chemical Industries, Ltd., boiling point 97 ° C.) were added to the eggplant flask. did. The reaction solution was reacted by heating at 60 ° C. for 3 hours while stirring at about 200 rpm with a magnetic stirrer.
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- Die Bonding (AREA)
Abstract
La présente invention porte sur une pâte d'argent qui est une pâte d'argent qui contient des particules d'argent et un solvant. Les particules d'argent contiennent des particules d'argent ayant un diamètre de particule de 1-20 μm et des particules d'argent ayant un diamètre de particule de 1-300 nm et qui sont recouvertes d'un agent protecteur qui a un point d'ébullition inférieur à 130 °C sous pression atmosphérique.
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JP2013-219283 | 2013-10-22 | ||
JP2013219283A JP6303392B2 (ja) | 2013-10-22 | 2013-10-22 | 銀ペースト及びそれを用いた半導体装置、並びに銀ペーストの製造方法 |
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WO2015060245A1 true WO2015060245A1 (fr) | 2015-04-30 |
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JP (1) | JP6303392B2 (fr) |
TW (1) | TWI636514B (fr) |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018055848A1 (fr) * | 2016-09-21 | 2018-03-29 | 矢崎総業株式会社 | Pâte électriquement conductrice et tableau de connexions l'utilisant |
CN110213883A (zh) * | 2019-06-28 | 2019-09-06 | 智玻蓝新科技(武汉)有限公司 | 一种玻璃基电路板导电线路制备工艺 |
CN111360270A (zh) * | 2015-09-07 | 2020-07-03 | 日立化成株式会社 | 接合体及半导体装置 |
CN114206526A (zh) * | 2019-09-02 | 2022-03-18 | 株式会社大阪曹達 | 银颗粒 |
US11515280B2 (en) * | 2018-04-12 | 2022-11-29 | Panasonic Intellectual Property Management Co., Ltd. | Mounting structure and nanoparticle mounting material |
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WO2017043545A1 (fr) * | 2015-09-07 | 2017-03-16 | 日立化成株式会社 | Pâte de cuivre pour l'assemblage, procédé de production de corps assemblé, et procédé de production de dispositif à semi-conducteur |
US11040416B2 (en) * | 2015-09-07 | 2021-06-22 | Showa Denko Materials Co., Ltd. | Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device |
JP6509770B2 (ja) * | 2016-03-31 | 2019-05-08 | Jx金属株式会社 | 導電性金属粉ペースト |
US10930612B2 (en) | 2017-01-11 | 2021-02-23 | Showa Denko Materials Co., Ltd. | Copper paste for pressureless bonding, bonded body and semiconductor device |
JP6624620B1 (ja) * | 2018-12-03 | 2019-12-25 | ニホンハンダ株式会社 | ペースト状銀粒子組成物、金属製部材接合体の製造方法および金属製部材接合体 |
CN112935240A (zh) * | 2021-01-20 | 2021-06-11 | 深圳市先进连接科技有限公司 | 微纳米复合银膏及其制备方法和气密性器件的封装方法 |
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JP2008091250A (ja) * | 2006-10-03 | 2008-04-17 | Mitsuboshi Belting Ltd | 低温焼成型銀ペースト |
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CN111360270A (zh) * | 2015-09-07 | 2020-07-03 | 日立化成株式会社 | 接合体及半导体装置 |
WO2018055848A1 (fr) * | 2016-09-21 | 2018-03-29 | 矢崎総業株式会社 | Pâte électriquement conductrice et tableau de connexions l'utilisant |
JP2018049735A (ja) * | 2016-09-21 | 2018-03-29 | 矢崎総業株式会社 | 導電性ペースト及びそれを用いた配線板 |
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CN114206526A (zh) * | 2019-09-02 | 2022-03-18 | 株式会社大阪曹達 | 银颗粒 |
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JP6303392B2 (ja) | 2018-04-04 |
TW201528388A (zh) | 2015-07-16 |
TWI636514B (zh) | 2018-09-21 |
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