WO2015045531A1 - 絶縁ゲート型半導体装置 - Google Patents
絶縁ゲート型半導体装置 Download PDFInfo
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- WO2015045531A1 WO2015045531A1 PCT/JP2014/066907 JP2014066907W WO2015045531A1 WO 2015045531 A1 WO2015045531 A1 WO 2015045531A1 JP 2014066907 W JP2014066907 W JP 2014066907W WO 2015045531 A1 WO2015045531 A1 WO 2015045531A1
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- WIPO (PCT)
- Prior art keywords
- voltage
- insulated gate
- gate semiconductor
- semiconductor element
- output current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
Abstract
Description
出力仕様に応じて定められた第1のゲート電圧を制御端子に受けてオン動作し、入力電圧をスイッチングして負荷に出力する、IGBTまたはパワーMOS-FETからなる絶縁ゲート型半導体素子と、
この絶縁ゲート型半導体素子のスイッチング動作に伴って前記負荷に出力される出力電流を検出する出力電流検出手段と、
前記絶縁ゲート型半導体素子のオン電圧を、前記IGBTのコレクタ・エミッタ間電圧Vce、または前記パワーMOS-FETのドレイン・ソース間電圧Vdsとして検出する電圧検出手段とを備える。
11,11a,11b~11f IGBT(絶縁ゲート型半導体素子)
12,12a,12b~12f フリーホイリング・ダイオード
13,13a,13b~13f 駆動装置
14 ゲート駆動回路
15 出力電流検出回路
16 電圧検出回路
17 負荷状態判定回路
17a 過電流検出部
17b 電圧判定部
18 ゲート電圧設定回路(発熱量抑制手段,出力電流低減手段)
M 三相交流モータ(負荷)
Claims (6)
- 出力仕様に応じて定められた第1のゲート電圧を制御端子に受けてオン動作し、入力電圧をスイッチングして負荷に出力する絶縁ゲート型半導体素子と、
この絶縁ゲート型半導体素子のスイッチング動作に伴って前記負荷に出力される出力電流を検出する出力電流検出手段と、
前記絶縁ゲート型半導体素子のオン電圧を検出する電圧検出手段と、
前記出力電流が定格出力電流を超え、且つ前記オン電圧が予め定められた第1の閾値電圧よりも低いとき、前記絶縁ゲート型半導体素子の制御端子に加えるゲート電圧を前記第1のゲート電圧よりも高く設定して該絶縁ゲート型半導体素子の発熱量を抑制する発熱量抑制手段と
を具備したことを特徴とする絶縁ゲート型半導体装置。 - 前記絶縁ゲート型半導体素子はIGBTであって、前記電圧検出手段は前記IGBTのコレクタ・エミッタ間電圧Vceを検出するものである請求項1に記載の絶縁ゲート型半導体装置。
- 前記絶縁ゲート型半導体素子はパワーMOS-FETであって、前記電圧検出手段は前記パワーMOS-FETのドレイン・ソース間電圧Vdsを検出するものである請求項1に記載の絶縁ゲート型半導体装置。
- 前記第1の閾値電圧は、前記出力電流が定格電流であるときの前記絶縁ゲート型半導体素子のオン電圧の略2倍として設定される請求項1に記載の絶縁ゲート型半導体装置。
- 請求項1~4のいずれかに記載の絶縁ゲート型半導体装置において、
更に前記出力電流が定格電流を超え、且つ前記オン電圧が前記絶縁ゲート型半導体素子の最大定格電圧に応じて定められた第2の閾値電圧よりも高いとき、該絶縁ゲート型半導体素子の制御端子に加えるゲート電圧を前記第1のゲート電圧よりも低く設定して前記出力電流を低減する出力電流低減手段を備えることを特徴とする絶縁ゲート型半導体装置。 - 前記第2の閾値電圧は、前記絶縁ゲート型半導体素子の最大定格電圧の略1/2として設定される請求項5に記載の絶縁ゲート型半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112014001238.6T DE112014001238T5 (de) | 2013-09-25 | 2014-06-25 | Halbleitervorrichtung mit isoliertem Gate |
CN201480020401.1A CN105103427B (zh) | 2013-09-25 | 2014-06-25 | 绝缘栅型半导体装置 |
JP2015538961A JP6070853B2 (ja) | 2013-09-25 | 2014-06-25 | 絶縁ゲート型半導体装置 |
US14/879,553 US10003249B2 (en) | 2013-09-25 | 2015-10-09 | Insulated gate semiconductor device including switchable insulated gate semiconductor element |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013198206 | 2013-09-25 | ||
JP2013-198206 | 2013-09-25 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/879,553 Continuation US10003249B2 (en) | 2013-09-25 | 2015-10-09 | Insulated gate semiconductor device including switchable insulated gate semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015045531A1 true WO2015045531A1 (ja) | 2015-04-02 |
Family
ID=52742689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2014/066907 WO2015045531A1 (ja) | 2013-09-25 | 2014-06-25 | 絶縁ゲート型半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10003249B2 (ja) |
JP (1) | JP6070853B2 (ja) |
CN (1) | CN105103427B (ja) |
DE (1) | DE112014001238T5 (ja) |
WO (1) | WO2015045531A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019161856A (ja) * | 2018-03-13 | 2019-09-19 | 株式会社デンソー | スイッチの駆動回路 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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GB2545236B (en) * | 2015-12-10 | 2017-12-13 | Rolls Royce Plc | A method of controlling an inverter |
US9871462B2 (en) * | 2015-12-11 | 2018-01-16 | Phase Technologies, Llc | Regenerative variable frequency drive with auxiliary power supply |
JP6332304B2 (ja) * | 2016-03-02 | 2018-05-30 | トヨタ自動車株式会社 | Dc−dcコンバータ |
JP6341222B2 (ja) * | 2016-03-31 | 2018-06-13 | トヨタ自動車株式会社 | 電源システム |
US10491139B2 (en) * | 2016-09-01 | 2019-11-26 | Siemens Aktiengesellschaft | Converter assembly and method for operating same |
JP6769350B2 (ja) * | 2017-03-08 | 2020-10-14 | 株式会社デンソー | 半導体スイッチの駆動装置 |
EP3576270A1 (de) * | 2018-05-29 | 2019-12-04 | Siemens Aktiengesellschaft | Umrichterbetrieb mit erhöhter gatesteuerspannung bei hoher sperrschichttemperatur |
JP6770559B2 (ja) * | 2018-08-29 | 2020-10-14 | 株式会社Subaru | 電力変換装置および車両 |
CN109600030B (zh) * | 2018-10-12 | 2021-03-23 | 蔚来(安徽)控股有限公司 | 用于功率装置的母线电容放电方法、系统及装置 |
JP2021125547A (ja) * | 2020-02-05 | 2021-08-30 | 富士電機株式会社 | 電力用半導体モジュール |
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JP2007259576A (ja) * | 2006-03-23 | 2007-10-04 | Hitachi Ltd | スイッチング素子の駆動回路 |
JP2010088036A (ja) * | 2008-10-02 | 2010-04-15 | Sumitomo Electric Ind Ltd | 接合型電界効果トランジスタの駆動装置および駆動方法 |
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JP5315155B2 (ja) | 2009-07-23 | 2013-10-16 | 日立オートモティブシステムズ株式会社 | 半導体素子制御装置、車載用電機システム |
US8937825B2 (en) * | 2009-12-10 | 2015-01-20 | Alfred E. Mann Foundation For Scientific Research | Timing controlled AC to DC converter |
JP5115829B2 (ja) * | 2010-06-09 | 2013-01-09 | 株式会社デンソー | スイッチング装置 |
US8885308B2 (en) * | 2011-07-18 | 2014-11-11 | Crane Electronics, Inc. | Input control apparatus and method with inrush current, under and over voltage handling |
WO2013038775A1 (ja) * | 2011-09-13 | 2013-03-21 | 三菱電機株式会社 | 電力用半導体素子のゲート駆動回路、および電力用半導体素子の駆動方法 |
-
2014
- 2014-06-25 CN CN201480020401.1A patent/CN105103427B/zh active Active
- 2014-06-25 JP JP2015538961A patent/JP6070853B2/ja not_active Expired - Fee Related
- 2014-06-25 WO PCT/JP2014/066907 patent/WO2015045531A1/ja active Application Filing
- 2014-06-25 DE DE112014001238.6T patent/DE112014001238T5/de not_active Withdrawn
-
2015
- 2015-10-09 US US14/879,553 patent/US10003249B2/en active Active
Patent Citations (2)
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JP2007259576A (ja) * | 2006-03-23 | 2007-10-04 | Hitachi Ltd | スイッチング素子の駆動回路 |
JP2010088036A (ja) * | 2008-10-02 | 2010-04-15 | Sumitomo Electric Ind Ltd | 接合型電界効果トランジスタの駆動装置および駆動方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2019161856A (ja) * | 2018-03-13 | 2019-09-19 | 株式会社デンソー | スイッチの駆動回路 |
JP7043903B2 (ja) | 2018-03-13 | 2022-03-30 | 株式会社デンソー | スイッチの駆動回路 |
Also Published As
Publication number | Publication date |
---|---|
US20160036316A1 (en) | 2016-02-04 |
CN105103427A (zh) | 2015-11-25 |
CN105103427B (zh) | 2018-04-27 |
JP6070853B2 (ja) | 2017-02-01 |
JPWO2015045531A1 (ja) | 2017-03-09 |
DE112014001238T5 (de) | 2016-01-14 |
US10003249B2 (en) | 2018-06-19 |
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