WO2015041335A1 - Système optique de projection, procédé de réglage de système optique de projection, appareil d'exposition, procédé d'exposition et procédé de fabrication de dispositif - Google Patents

Système optique de projection, procédé de réglage de système optique de projection, appareil d'exposition, procédé d'exposition et procédé de fabrication de dispositif Download PDF

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Publication number
WO2015041335A1
WO2015041335A1 PCT/JP2014/074896 JP2014074896W WO2015041335A1 WO 2015041335 A1 WO2015041335 A1 WO 2015041335A1 JP 2014074896 W JP2014074896 W JP 2014074896W WO 2015041335 A1 WO2015041335 A1 WO 2015041335A1
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Prior art keywords
optical system
reflecting mirror
imaging
concave reflecting
imaging optical
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PCT/JP2014/074896
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English (en)
Japanese (ja)
Inventor
陽介 柘植
拓郎 小野
大村　泰弘
吉晴 湯淺
啓佑 長谷川
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株式会社ニコン
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Publication of WO2015041335A1 publication Critical patent/WO2015041335A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0825—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a flexible sheet or membrane, e.g. for varying the focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction

Definitions

  • the present invention relates to a projection optical system, a projection optical system adjustment method, an exposure apparatus, an exposure method, and a device manufacturing method.
  • an exposure apparatus that projects and exposes a mask (reticle) pattern onto a photosensitive substrate (a wafer coated with a photoresist) via a projection optical system Is used.
  • the resolution (resolution) required for the projection optical system is increasing.
  • the optical characteristics fluctuate due to the influence of irradiation energy of light passing through the optical system during exposure.
  • the optical surface of the lens changes or the refractive index distribution of the lens changes due to light irradiation.
  • the lens interval changes due to deformation of the lens barrel due to light irradiation, or the density distribution (refractive index distribution) of the atmosphere changes due to light irradiation.
  • the fluctuation of the optical characteristics deteriorates the wavefront aberration of the projection optical system, and consequently the imaging performance such as the resolving power of the projection optical system.
  • the present invention has been made in view of the above-described problems, and an object thereof is to provide a projection optical system having high imaging performance, for example. It is another object of the present invention to provide an exposure apparatus that can project and expose a fine pattern onto a photosensitive substrate with high accuracy using a projection optical system having high imaging performance.
  • a first imaging optical portion disposed in an optical path between the first surface and the second surface and including a first concave reflecting mirror to form an intermediate image of the first surface;
  • a second imaging optical part that is arranged in an optical path between the first imaging optical part and the second surface, includes a second concave reflecting mirror, and forms an image of the intermediate image;
  • At least one of the first concave reflecting mirror and the second concave reflecting mirror has a deformable reflecting surface, and a projection optical system is provided.
  • a first imaging optical unit including a first concave reflecting mirror disposed in an optical path between the first surface and the second surface and having a deformable reflecting surface;
  • a second imaging optical unit including a second concave reflecting mirror disposed in an optical path between the first imaging optical unit and the second surface and having a deformable reflecting surface.
  • a first imaging optical unit that is disposed in an optical path between the first surface and the second surface includes a first concave reflecting mirror, and optically conjugates different surfaces to each other;
  • a second imaging optical unit that is disposed in the optical path between the first imaging optical unit and the second surface includes a second concave reflecting mirror, and makes different surfaces optically conjugate with each other.
  • the first concave reflecting mirror is disposed on the first surface side from a first pupil position that is optically Fourier-transformed with the position of the first surface in the optical path of the first imaging optical unit.
  • the second concave reflecting mirror is disposed on the second surface side from a second pupil position that is optically Fourier-transformed with the position of the first surface in the optical path of the second imaging optical unit.
  • a projection optical system is provided.
  • a first imaging optical unit that is disposed in an optical path between the first surface and the second surface includes a first concave reflecting mirror, and optically conjugates different surfaces to each other;
  • the first concave reflecting mirror is disposed on the second surface side from a first pupil position optically Fourier-transformed with the position of the first surface in the optical path of the first imaging optical unit.
  • the second concave reflecting mirror is disposed on the first surface side from a second pupil position that is optically Fourier-transformed with the position of the first surface in the optical path of the second imaging optical unit.
  • a projection optical system is provided.
  • a first imaging optical unit that is disposed in an optical path between the first surface and the second surface includes a first concave reflecting mirror, and optically conjugates different surfaces to each other;
  • the first concave reflecting mirror is disposed at a first pupil position that is optically Fourier-transformed with the position of the first surface in the optical path of the first imaging optical unit
  • the second concave reflecting mirror is located on the first surface side or the second surface from a second pupil position that is optically Fourier-transformed with the position of the first surface in the optical path of the second imaging optical unit.
  • a projection optical system characterized in that the projection optical system is arranged on the side.
  • a first imaging optical unit that is disposed in an optical path between the first surface and the second surface includes a first concave reflecting mirror, and optically conjugates different surfaces to each other;
  • a second imaging optical unit that is disposed in the optical path between the first imaging optical unit and the second surface includes a second concave reflecting mirror, and makes different surfaces optically conjugate with each other.
  • the first concave reflecting mirror is located on the first surface side or the second surface from a first pupil position optically Fourier-transformed with the position of the first surface in the optical path of the first imaging optical unit.
  • the second concave reflecting mirror is disposed at a second pupil position that is optically Fourier-transformed with the position of the first surface in the optical path of the second imaging optical unit.
  • An optical system is provided.
  • a first imaging optical unit that is disposed in an optical path between the first surface and the second surface includes a first concave reflecting mirror, and optically conjugates different surfaces to each other;
  • the first concave reflecting mirror is disposed at a first pupil position that is optically Fourier-transformed with the position of the first surface in the optical path of the first imaging optical unit
  • the second concave reflecting mirror is disposed at a second pupil position that is optically Fourier-transformed with the position of the first surface in the optical path of the second imaging optical unit.
  • a first imaging optical system disposed in an optical path between the first surface and the second surface and forming a first intermediate image of the first surface;
  • Optical system A fourth imaging optical system disposed in an optical path between the third imaging optical system and the second surface, and forming an image of the third intermediate image on the second surface;
  • the second imaging optical system includes a plurality of positive lenses disposed in an optical path between the first intermediate image and the first concave reflecting mirror,
  • the third image-forming optical system includes a plurality of positive lenses arranged in an optical path between the second intermediate image and the second concave reflecting mirror.
  • a first imaging optical system disposed in an optical path between the first surface and the second surface and forming a first intermediate image of the first surface;
  • Optical system A fourth imaging optical system disposed in an optical path between the third imaging optical system and the second surface, and forming an image of the third intermediate image on the second surface;
  • the fourth imaging optical system is provided with a projection optical system including a positive lens that is disposed closest to the third intermediate image and has a convex surface facing the second surface.
  • a first imaging optical system disposed in an optical path between the first surface and the second surface and forming a first intermediate image of the first surface;
  • Optical system A fourth imaging optical system disposed in an optical path between the third imaging optical system and the second surface, and forming an image of the third intermediate image on the second surface;
  • the second imaging optical system includes a positive meniscus lens that is disposed closest to the first intermediate image side and has a convex surface facing the first intermediate image side.
  • a first imaging optical system disposed in an optical path between the first surface and the second surface and forming a first intermediate image of the first surface
  • a second imaging that is disposed in an optical path between the first imaging optical system and the second surface includes a first concave reflecting mirror, and forms a second intermediate image that is an image of the first intermediate image.
  • a third imaging that is disposed in an optical path between the second imaging optical system and the second surface includes a second concave reflecting mirror, and forms a third intermediate image that is an image of the second intermediate image.
  • a fourth imaging optical system disposed in an optical path between the third imaging optical system and the second surface, and forming an image of the third intermediate image on the second surface;
  • the second imaging optical system is provided with a lens that is disposed closest to the first intermediate image side and that is disposed adjacent to the first concave reflecting mirror. To do.
  • a first imaging optical system disposed in an optical path between the first surface and the second surface and forming a first intermediate image of the first surface;
  • Optical system A fourth imaging optical system disposed in an optical path between the third imaging optical system and the second surface, and forming an image of the third intermediate image on the second surface;
  • the second imaging optical system includes a positive meniscus lens that is disposed closest to the first intermediate image side and has a convex surface facing the first intermediate image side.
  • a first imaging optical system disposed in an optical path between the first surface and the second surface and forming a first intermediate image of the first surface
  • a second imaging that is disposed in an optical path between the first imaging optical system and the second surface, includes a first concave reflecting mirror, and forms a second intermediate image that is an image of the first intermediate image.
  • a third imaging that is disposed in an optical path between the second imaging optical system and the second surface includes a second concave reflecting mirror, and forms a third intermediate image that is an image of the second intermediate image.
  • a fourth imaging optical system disposed in an optical path between the third imaging optical system and the second surface, and forming an image of the third intermediate image on the second surface;
  • the second imaging optical system is provided with a lens that is disposed closest to the first intermediate image side and that is disposed adjacent to the first concave reflecting mirror. To do.
  • a first imaging optical system disposed in an optical path between the first surface and the second surface and forming a first intermediate image of the first surface;
  • a fourth imaging optical system disposed in an optical path between the third imaging optical system and the second surface, and forming an image of the third intermediate image on the second surface;
  • a first deflecting mirror disposed in an optical path between the first imaging optical system and the second imaging optical system;
  • a projection optical system comprising a second deflecting mirror disposed between the third imaging optical system and the fourth imaging optical system is provided.
  • the first to fourteenth aspects for projecting the predetermined pattern onto a substrate set on the second surface based on light from the predetermined pattern set on the first surface.
  • An exposure apparatus comprising any one of the projection optical systems is provided.
  • the exposure apparatus of the sixteenth form or the exposure method of the seventeenth form exposing the predetermined pattern to the substrate; Developing the substrate to which the predetermined pattern is transferred, and forming a mask layer having a shape corresponding to the predetermined pattern on the surface of the substrate; And processing the surface of the substrate through the mask layer.
  • a device manufacturing method is provided.
  • FIG. 1 shows schematically the structure of the projection optical system concerning embodiment of this invention. It is a figure which shows roughly the effective image formation area in the image surface of a projection optical system. It is a figure which shows roughly the effective visual field area
  • (A) shows aberration components generated when the first concave reflecting mirror CM1 is deformed according to the function FZ 17 in the first embodiment, and (b) shows the second concave reflecting mirror CM2 in the first embodiment.
  • An aberration component generated when the same deformation as that of the first concave reflecting mirror CM1 is given is shown.
  • (A) shows a state in which the 0th-order aberration component is mainly generated in the first embodiment, and (b) shows a state in which the first-order aberration component is mainly generated in the first embodiment.
  • FIG. 1 is a diagram schematically showing a configuration of a projection optical system according to an embodiment of the present invention.
  • a four-fold imaging type catadioptric optical system PL comprising four imaging optical units K1, K2, K3, and K4 as shown in FIG. Is assumed.
  • the Z-axis is along the normal direction of the transfer surface (exposure surface) of the wafer W, which is a photosensitive substrate, and the Y-axis is in the direction parallel to the paper surface of FIG.
  • the X axis is set in a direction perpendicular to the paper surface of FIG.
  • the projection optical system PL of the present embodiment has an image surface (second surface) on which the exposure surface of the wafer W is installed from the object surface (first surface) OB on which the pattern surface of the mask M is installed.
  • Surface) a catadioptric optical system including a first imaging optical unit K1 serving as a refractive optical system, a first planar reflecting mirror FM1 serving as a deflecting mirror for bending an optical path, and a first concave reflecting mirror CM1 in the order of incidence of light on IM.
  • the first flat reflecting mirror FM1 and the second flat reflecting mirror FM2 are formed as an integrated optical member.
  • the first planar reflecting mirror FM1 and the second planar reflecting mirror FM2 may be separate optical members.
  • the imaging optical unit can be an imaging optical system that forms an image of a predetermined surface on the imaging surface.
  • the imaging optical unit can be an imaging optical system in which different predetermined surfaces are in an optically conjugate relationship.
  • the first imaging optical unit K1 and the second imaging optical unit K2 can be regarded as a first imaging optical part that forms an intermediate image of the object plane (first surface) OB.
  • the third imaging optical unit K3 and the fourth imaging optical unit K4 can be regarded as a second imaging optical portion that forms an intermediate image on the image plane (second surface).
  • the effective imaging region ER on the image plane IM of the projection optical system PL is a region away from the optical axis AX of the projection optical system PL.
  • the effective imaging region ER is a rectangular region separated from the optical axis AX by a distance Ra along the Y direction in the image field IF having a radius Rb centered on the optical axis AX, that is, in the X direction.
  • the effective field area FR on the object plane OB of the projection optical system PL is a rectangular area separated from the optical axis AX of the projection optical system PL in the Y direction.
  • the effective imaging region ER may be a region where light from the object plane OB is guided on the image plane IM of the projection optical system PL and the aberration is substantially corrected.
  • the effective imaging region ER may be a region where light from the object plane OB is guided on the image plane IM of the projection optical system PL.
  • the reflecting surface of the first concave reflecting mirror CM1 and the reflecting surface of the second concave reflecting mirror CM2 are configured to be deformable, and the first active deforming portion actively activates the reflecting surface of the first concave reflecting mirror CM1.
  • the second active deformation portion actively deforms the reflecting surface of the second concave reflecting mirror CM2.
  • an active deformation portion AD including a plurality of actuators AC provided on the back side of the concave reflecting mirror CM1 (CM2) can be used.
  • the plurality of actuators AC are arranged such that their action points ACa are distributed radially.
  • a plurality of actuators AC may be arranged such that their action points ACa are distributed in a two-dimensional matrix.
  • the active deformation unit AD deforms the reflecting surface CM1a (CM2a) into a desired surface shape by a plurality of actuators AC pushing and pulling the reflecting surface CM1a (CM2a) of the concave reflecting mirror CM1 (CM2) from the back side.
  • US Pat. No. 6,842,277 can be referred to for a specific configuration and action of the active deformation portion AD.
  • a deformation mechanism disclosed in Japanese Patent Publication No. 2010 / 0033704A1 can also be used. Further, at least one of the reflecting surfaces CM1a (CM2a) of the concave reflecting mirror CM1 (CM2) may be deformable.
  • the first concave reflecting mirror CM1 is optically Fourier-transformed with the position of the object plane OB in the optical path of the second imaging optical unit K2. It is arranged on the image plane IM side with respect to one pupil position.
  • the second concave reflecting mirror CM2 is disposed on the object plane OB side with respect to the second pupil position that is optically Fourier-transformed with the position of the object plane OB in the optical path of the third imaging optical unit K3. ing.
  • the first concave reflecting mirror CM1 is disposed on the object plane OB side with respect to the first pupil position, and the second concave reflecting mirror CM2 is disposed on the image plane IM side with respect to the second pupil position.
  • the first concave reflecting mirror CM1 is arranged on the image plane IM side with respect to the first pupil position, and the second concave reflecting mirror CM2 is arranged at a position substantially coincident with the second pupil position.
  • the first concave reflecting mirror CM1 is arranged at a position substantially coincident with the first pupil position, and the second concave reflecting mirror CM2 is arranged at a position almost coincident with the second pupil position.
  • the pupil position can be a position that is optically Fourier-transformed with the position of the object plane OB or the position of the image plane IM.
  • the pupil position is optically conjugate with the entrance pupil of the catadioptric optical system PL that can be regarded as a projection optical system and the exit pupil of the catadioptric optical system PL. It can be at least one of the conjugate positions.
  • an index G representing the positional relationship between an arbitrary optical surface (for example, the reflecting surfaces CM1a and CM2a of the concave reflecting mirrors CM1 and CM2) and the pupil position closest to the arbitrary optical surface is defined.
  • the index G is defined by the following equation (a).
  • G A / Re (a)
  • Re is a partial spot occupied by an arbitrary optical surface when the light beam from each point in the effective field area FR on the object plane OB reaches the arbitrary optical surface as shown in FIG.
  • the partial spot means a region occupied by an arbitrary optical surface when a light beam emitted from each point in the effective visual field region FR reaches an arbitrary optical surface with an opening angle corresponding to the maximum numerical aperture. is doing.
  • A circumscribes a partial spot PSa occupied by an arbitrary optical surface when a light beam from the center point FRa (see FIG. 3) of the effective visual field region FR reaches the arbitrary optical surface.
  • the center point FRa of the effective visual field region FR can be the center of gravity of the effective visual field region FR.
  • the index G1 related to the reflecting surface CM1a of the first concave reflecting mirror CM1 that is, the index G1 indicating the positional relationship between the reflecting surface CM1a and the first pupil position in the optical path of the second imaging optical unit K2
  • reflection is performed.
  • the surface CM1a is at the first pupil position, and the distance of the reflection surface CM1a from the first pupil position increases as the index G1 increases.
  • the index G2 related to the reflecting surface CM2a of the second concave reflecting mirror CM2 that is, the index G2 representing the positional relationship between the reflecting surface CM2a and the second pupil position in the optical path of the third imaging optical unit K3 is 0.
  • the reflection surface CM2a is at the second pupil position, and the distance of the reflection surface CM2a from the second pupil position increases as the index G2 increases.
  • the imaging optical system shown in FIG. 7 is similar to (modeled) the projection optical system according to the present embodiment as a simple imaging optical system.
  • the modeled imaging optical system shown in FIG. 7 is a one-time imaging type refractive optical system that optically conjugates the object plane OB and the image plane IM, and the object plane OB at the pupil position PP.
  • An optical surface correction mechanism MD1 is arranged on the side, and an optical surface correction mechanism MD2 is arranged on the image plane IM side of the pupil position PP.
  • the operations of the correction mechanisms MD1 and MD2 correspond to the operations of the concave reflecting mirrors CM1 and CM2 when the reflecting surfaces CM1a and CM2a are deformed in the projection optical system PL of the present embodiment.
  • the correction mechanisms MD1 and MD2 have a function of giving a given wavefront aberration component to the light beams passing through the respective optical surfaces.
  • deformations according to the same function display are applied to the reflecting surface CM1a of the first concave reflecting mirror CM1 and the reflecting surface CM2a of the second concave reflecting mirror CM2.
  • a deformation according to the function FZ 17 ⁇ 4 cos4 ⁇ according to the seventeenth term in a Zernike polynomial using a polar coordinate system is given.
  • ⁇ is a normalized half-range when the radius of the circular effective reflection region of the reflection surfaces CM1a and CM2a is normalized to 1, and ⁇ is a radial angle of polar coordinates.
  • the action of the correction mechanism MD1 corresponds to the action of the concave reflecting mirror CM1 when the deformation according to the function FZ 17 is given to the reflecting surface CM1a.
  • the wavefront aberration related to the center position of the effective image forming region ER ERa see Figure 2
  • aberration components Z17 of 4 rotational symmetry that are displayed according to the function FZ 17 is generated. This can be easily understood from the fact that when the light beam reaching the center position ERa of the effective imaging region ER passes through the correction mechanism MD1, it passes through the region centered on the optical axis.
  • the correcting mechanism MD1 By the action of the correcting mechanism MD1, as the wavefront aberration related to the second peripheral position ERc along the -X direction from the center position ERa effective image forming region ER (see FIG. 2), as shown in FIG. 8, the function FZ 17 Therefore the aberration component Z17 of 4 rotational symmetry displayed, aberration components of 3-fold rotational symmetry, which is displayed according to the function FZ 10 according to Section 10 Z10 (-) and is generated. This is because when the light beam reaching the second peripheral position ERc of the effective imaging region ER passes through the correction mechanism MD1, it passes through a region decentered in the + X direction from the optical axis.
  • the sign of the coefficient of the function FZ 17 representing the aberration component Z17 is the same without depending on the position in the X direction in the effective image formation region ER, and the magnitude of the coefficient is the position in the X direction in the effective image formation region ER. It is almost constant without dependence.
  • the sign of the coefficient of the function FZ 10 representing the aberration component Z10 is opposite between the first peripheral position ERb and the second peripheral position ERc, and the magnitude of the coefficient depends on the position in the X direction in the effective imaging region ER. It is almost constant without.
  • the imaging optical system shown in FIG. 7 is configured symmetrically with respect to the pupil position PP, and the correction mechanisms MD1 and MD2 Are arranged symmetrically with respect to the pupil position PP. Furthermore, the effect of the correction mechanism MD1, MD2, the reflective surface CM 1, corresponds to the action of the concave reflecting mirror CM1, CM2 when only each other the same amount deformation according to the function FZ 17 granted to CM2a having the same surface shape as each other It shall be.
  • the wavefront aberration generated by the action of the correction mechanism MD1 at each point on the straight line extending in the X direction through the center position ERa of the effective imaging region ER is displayed according to the function FZ 17 4.
  • the aberration component Z17 times rotational symmetry
  • aberration components Z10 (1) of the 3-fold rotational symmetry which is displayed according to the function FZ 10 and is generated.
  • correction mechanisms MD1 and MD2 are arranged symmetrically with respect to pupil position PP, and the actions of correction mechanisms MD1 and MD2 correspond to the actions of concave reflecting mirrors CM1 and CM2 when the same amount of deformation is applied to each other , sign and magnitude of the coefficients of the function FZ 17 representing the aberration component Z17 is the same to each other in the correction mechanism MD1 and MD2, sign and magnitude of the coefficients of the function FZ 10 representing the aberration component Z10 is a correction mechanism MD1 MD2 And reverse.
  • the sign and magnitude of the coefficients of the function FZ 10 representing the aberration component Z10 is inverted by the correction mechanism MD1 and MD2, the region where the light flux reaching the point of the effective imaging region ER passes the correction mechanism MD1 and correction mechanism It can be easily understood from the fact that the region passing through MD2 is eccentric to the opposite side with respect to the optical axis.
  • the correction mechanisms MD1 and MD2 are arranged symmetrically with respect to the pupil position PP, and the action of the correction mechanisms MD1 and MD2 corresponds to the action of the concave reflecting mirrors CM1 and CM2 when the same sign and size are applied.
  • the aberration component Z10 is canceled by the cooperative action of the correction mechanisms MD1 and MD2, and only the doubled aberration component Z17 is generated as a wavefront aberration.
  • the cooperative action of the correction mechanisms MD1 and MD2 generating a zero-order aberration component that is a uniform aberration component for each point along the X direction in the effective imaging region ER on the image plane IM; As a result, the zero-order aberration component of the wavefront aberration can be adjusted.
  • the correction mechanisms MD1 and MD2 are arranged symmetrically with respect to the pupil position PP, and the actions of the concave reflecting mirrors CM1 and CM2 when the actions of the correction mechanisms MD1 and MD2 are given different deformations and the same size.
  • the aberration component Z17 is canceled by the cooperative action of the correction mechanisms MD1 and MD2, and only the doubled aberration component Z17 is generated as a wavefront aberration. This is because the aberration components Z17 and Z10 are also reversed when the sign of the applied deformation is reversed.
  • a primary aberration component that is an aberration component that linearly changes for each point along the X direction in the effective imaging region ER is generated, and thus the wavefront.
  • the primary aberration component of the aberration can be adjusted.
  • the function FZ 17 expressing the deformation to be applied to the correction mechanisms MD1 and MD2 if the correction mechanisms MD1 and MD2 are arranged across the pupil position PP. If the sign and the magnitude of the coefficient are appropriately set (or changed), the zero-order aberration component and the first-order aberration component are independently generated for each point along the X direction in the effective imaging region ER. This means that the zero-order aberration component and the first-order aberration component of the wavefront aberration can be adjusted independently.
  • the correction mechanism MD1 when the correction mechanism MD1 is arranged at a required distance from the pupil position PP and the correction mechanism MD2 is arranged at the position of the pupil position PP, the aberration component Z17 and the aberration component Z10 are generated by the action of the correction mechanism MD1. Only the aberration component Z17 is generated by the action of the correction mechanism MD2. This is because when one of the correction mechanisms is arranged at a required distance from the pupil position PP and the other correction mechanism is arranged at or near the pupil position PP, the deformation applied to the correction mechanisms MD1 and MD2.
  • the coefficient sign and the magnitude of the function FZ 17 expressing the value are appropriately set (or changed), and the zero-order aberration component and the first-order aberration component for each point along the X direction in the effective imaging region ER are set. This means that it is generated to some extent independently, and that the 0th-order aberration component and the first-order aberration component of the wavefront aberration can be independently adjusted to some extent.
  • both the correction mechanisms MD1 and MD2 are arranged at or near the pupil position PP, only the aberration component Z17 is generated by the action of the correction mechanism MD1, and only the aberration component Z17 is generated by the action of the correction mechanism MD2. Will do.
  • the sign and size of the coefficient of the function FZ 17 expressing the deformation to be applied to the correction mechanisms MD1 and MD2 are set appropriately. (Or changing) to generate only a required amount of the zero-order aberration component for each point along the X direction in the effective imaging region ER, and to adjust only the zero-order aberration component of the wavefront aberration. Means you can.
  • the index G1 related to the reflecting surface CM1a of the first concave reflecting mirror CM1 and the index G2 related to the reflecting surface CM2a of the second concave reflecting mirror CM2 are the following.
  • the first concave reflecting mirror CM1 from the pupil position (first pupil position) in the optical path of the second imaging optical unit K2 to the image plane IM side (or object) so that the conditional expressions (1) and (2) are satisfied
  • the second concave reflecting mirror CM2 is disposed at a position on the surface OB side, and the position on the object plane OB side (or image plane IM side) from the pupil position (second pupil position) in the optical path of the third imaging optical unit K3. Is arranged. 0.02 ⁇ G1 ⁇ 0.07 (1) 0.02 ⁇ G2 ⁇ 0.07 (2)
  • the reflecting surface CM1a of the first concave reflecting mirror CM1 and the reflecting surface CM2a of the second concave reflecting mirror CM2 are arranged.
  • the second-order aberration component can be generated independently, and the zero-order aberration component and the first-order aberration component of the wavefront aberration of the projection optical system PL can be adjusted independently.
  • the concave reflecting mirrors CM1 and CM2 are too close to the pupil position, so that the generation of the aberration component Z10 is reduced, and consequently the first-order wavefront aberration of the projection optical system PL. Adjustment of the aberration component becomes difficult.
  • the upper limit value of conditional expressions (1) and (2) is exceeded, the concave reflecting mirrors CM1 and CM2 are too far from the pupil position, and not only the generation of the aberration component Z17 is reduced, but also unnecessary aberrations that cannot be controlled. The generation of components will increase.
  • the lower limit value of conditional expressions (1) and (2) can be set to 0.03.
  • the upper limit of conditional expressions (1) and (2) can be set to 0.05.
  • aberration components Z05, Z10, and Z17 are generated as shown in FIG. 9 in accordance with the change of the index G1 related to the reflective surface CM1a (or the index G2 related to the reflective surface CM2a).
  • the horizontal axis indicates the value of the index G1 (G2)
  • the vertical axis indicates the amount of each aberration component generated (normalized aberration generation amount when the maximum value of the aberration component Z17 is normalized to 1). ing.
  • the aberration component Z05 is a two-fold rotationally symmetric aberration component displayed according to the function FZ 5 : ⁇ 2 cos2 ⁇ according to the fifth term, and is an unnecessary aberration component that cannot be controlled, that is, an aberration that is not intended to be generated. It is an ingredient. Referring to FIG. 9, it can be seen that when the value of the index G1 (G2) is equal to or greater than 0.07, the generation of unnecessary aberration component Z05 increases. It can also be seen that when the value of the index G1 (G2) is 0.02 or less, the aberration component Z10 necessary for adjusting the first-order aberration component of the wavefront aberration is not sufficiently large.
  • FIG. 9 illustrates a case where the deformation according to the function FZ 17 according to the seventeenth term is applied.
  • the function FZ 28 (6 ⁇ 6 ⁇ 5 ⁇ 4 ) cos 4 ⁇ according to the 28th term, as shown in FIG. 10, the appropriate index G 1 (G 2)
  • FIG. 10 shows a change in the index G1 (G2) when the deformation according to the function FZ 28 is applied to the reflecting surface CM1a of the first concave reflecting mirror CM1 (or the reflecting surface CM2a of the second concave reflecting mirror CM2).
  • the horizontal axis indicates the value of the index G1 (G2)
  • the vertical axis indicates the generation amount of each aberration component (normalized aberration generation amount when the maximum value of the aberration component Z28 is normalized to 1). ing.
  • the aberration component Z12 is a two-fold rotationally symmetric aberration component displayed according to the function FZ 12 : (4 ⁇ 2 ⁇ 3) ⁇ 2 cos 2 ⁇ according to the twelfth term.
  • the aberration component Z26 is a five-fold rotationally symmetric aberration component displayed according to the function FZ 26 : ⁇ 5 cos5 ⁇ according to the 26th term.
  • Aberration component Z28 is an aberration component of 4-fold rotational symmetry, which is displayed according to the function FZ 28 according to paragraph 28. Referring to FIG. 10, it can be seen that when the value of the index G1 (G2) is 0.07 or more, generation of unnecessary aberration components Z10 and Z12 that cannot be controlled increases. It can also be seen that when the value of the index G1 (G2) is 0.02 or less, the aberration components Z17 and Z26 necessary for adjusting the first-order aberration component of the wavefront aberration are not sufficiently large.
  • the index G1 related to the reflecting surface CM1a of the first concave reflecting mirror CM1 and the index G2 related to the reflecting surface CM2a of the second concave reflecting mirror CM2 are expressed by the following conditional expressions (1) and (3).
  • the first concave reflecting mirror CM1 is arranged at a position on the image plane IM side from the first pupil position
  • the second concave reflecting mirror CM2 is arranged at a position substantially coincident with the second pupil position. 0.02 ⁇ G1 ⁇ 0.07 (1) 0 ⁇ G2 ⁇ 0.02 (3)
  • the first concave reflecting mirror CM1 is disposed on the image plane IM side from the first pupil position.
  • the first concave reflecting mirror CM1 is disposed on the object plane OB side from the first pupil position. Even in this case, the same effect as in the third embodiment can be obtained.
  • the index G1 related to the reflecting surface CM1a of the first concave reflecting mirror CM1 and the index G2 related to the reflecting surface CM2a of the second concave reflecting mirror CM2 are expressed by the following conditional expressions (4) and (2).
  • the first concave reflecting mirror CM1 is arranged at a position substantially coinciding with the first pupil position, and the second concave reflecting mirror CM2 is positioned on the image plane IM side (or object plane OB side) from the second pupil position. You may arrange in. In this case, the same effect as in the third embodiment can be obtained. 0 ⁇ G1 ⁇ 0.02 (4) 0.02 ⁇ G2 ⁇ 0.07 (2)
  • the index G1 related to the reflecting surface CM1a of the first concave reflecting mirror CM1 and the index G2 related to the reflecting surface CM2a of the second concave reflecting mirror CM2 are expressed by the following conditional expressions (4) and (3).
  • the first concave reflecting mirror CM1 is disposed at a position substantially matching the first pupil position
  • the second concave reflecting mirror CM2 is disposed at a position approximately matching the second pupil position. 0 ⁇ G1 ⁇ 0.02 (4) 0 ⁇ G2 ⁇ 0.02 (3)
  • the pupil position position where the aperture stop AS is disposed
  • the power Pw unit: mm ⁇ 1
  • the power Pw of the partial optical system including a plurality of optical elements disposed between the surface IM satisfies the following conditional expression (5).
  • conditional expression (5) If the lower limit of conditional expression (5) is not reached, the lens diameter necessary to ensure the required image-side numerical aperture will be too large, and the projection optical system PL will be enlarged in the radial direction. In order to exhibit the effect of the embodiment more satisfactorily, the lower limit value of the conditional expression (5) can be set to 0.011.
  • conditional expression (6) is satisfied.
  • Rb is the maximum image height (see FIG. 2) of the effective imaging region ER on the image plane IM
  • Rm is the maximum lens effective radius in the fourth imaging optical unit K4.
  • conditional expression (6) If the lower limit value of conditional expression (6) is not reached, the lens power burden becomes too great, and the design of the projection optical system PL becomes difficult. In order to exhibit the effect of the embodiment more satisfactorily, the lower limit value of conditional expression (6) can be set to 10.0.
  • FIG. 11 is a view schematically showing a configuration of an exposure apparatus according to the present embodiment. Also in FIG. 11, as in FIG. 1, the Z-axis is parallel to the normal direction of the transfer surface (exposure surface) of the wafer W, which is a photosensitive substrate, and parallel to the paper surface of FIG. The Y-axis is set in one direction and the X-axis is set in the direction perpendicular to the paper surface of FIG.
  • the exposure apparatus of this embodiment includes an illumination optical system 1 including, for example, an optical integrator (homogenizer), a field stop, a condenser lens, and the like.
  • Exposure light (exposure beam) IL made up of ultraviolet pulsed light having a wavelength of 193 nm emitted from an ArF excimer laser light source that is an exposure light source passes through the illumination optical system 1 and illuminates a mask (reticle) M.
  • a pattern to be transferred is formed on the mask M, and a rectangular (slit-like) pattern region having a long side along the X direction and a short side along the Y direction is illuminated in the entire pattern region. Is done.
  • the light that has passed through the mask M forms a mask pattern at a predetermined projection magnification on an exposure area on a wafer (photosensitive substrate) W coated with a photoresist via an immersion type catadioptric projection optical system PL.
  • a mask pattern at a predetermined projection magnification on an exposure area on a wafer (photosensitive substrate) W coated with a photoresist via an immersion type catadioptric projection optical system PL.
  • Form That is, a rectangular still exposure having a long side along the X direction and a short side along the Y direction on the wafer W so as to optically correspond to the rectangular illumination area on the mask M.
  • a pattern image is formed in an area (effective exposure area; effective imaging area).
  • the mask M is held parallel to the XY plane on the mask stage MST, and a mechanism for finely moving the mask M in the X direction, the Y direction, and the rotation direction is incorporated in the mask stage MST.
  • positions in the X direction, the Y direction, and the rotational direction are measured and controlled in real time by a mask laser interferometer 13m using a moving mirror 12m provided on the mask stage MST.
  • the wafer W is fixed in parallel to the XY plane on the Z stage 9 via the wafer holder WH.
  • the Z stage 9 is fixed on an XY stage 10 that moves along an XY plane substantially parallel to the image plane of the projection optical system PL, and the focus position (position in the Z direction) and tilt of the wafer W are fixed. Control the corners.
  • the Z stage 9 is measured and controlled in real time in the X direction, the Y direction, and the rotational direction by a wafer laser interferometer 13 w using a moving mirror 12 w provided on the Z stage 9.
  • the XY stage 10 is placed on the base 11 and controls the X direction, Y direction, and rotation direction of the wafer W.
  • the main control system 14 provided in the exposure apparatus of the present embodiment adjusts the position of the mask M in the X direction, the Y direction, and the rotation direction based on the measurement values measured by the mask laser interferometer 13m. That is, the main control system 14 adjusts the position of the mask M by transmitting a control signal to a mechanism incorporated in the mask stage MST and finely moving the mask stage MST. The main control system 14 adjusts the focus position (position in the Z direction) and the tilt angle of the wafer W in order to adjust the surface on the wafer W to the image plane of the projection optical system PL by the auto focus method and the auto leveling method. I do.
  • the main control system 14 transmits a control signal to the wafer stage drive system 15 and drives the Z stage 9 by the wafer stage drive system 15 to adjust the focus position and tilt angle of the wafer W. Further, the main control system 14 adjusts the position of the wafer W in the X direction, the Y direction, and the rotation direction based on the measurement values measured by the wafer laser interferometer 13w. That is, the main control system 14 transmits a control signal to the wafer stage drive system 15 and drives the XY stage 10 by the wafer stage drive system 15 to adjust the position of the wafer W in the X direction, the Y direction, and the rotation direction. .
  • the main control system 14 transmits a control signal to a mechanism incorporated in the mask stage MST, and also transmits a control signal to the wafer stage drive system 15, and a speed ratio corresponding to the projection magnification of the projection optical system PL. Then, the mask stage MST and the XY stage 10 are driven to project and expose the pattern image of the mask M into a predetermined shot area on the wafer W. Thereafter, the main control system 14 transmits a control signal to the wafer stage drive system 15, and drives the XY stage 10 by the wafer stage drive system 15, thereby stepping another shot area on the wafer W to the exposure position.
  • the operation of scanning and exposing the pattern image of the mask M on the wafer W by the step-and-scan method is repeated. That is, in this embodiment, the position of the mask M and the wafer W is controlled using the wafer stage drive system 15 and the wafer laser interferometer 13w, etc., and the short side direction of the rectangular stationary exposure region and the stationary illumination region, that is, the Y direction.
  • the wafer W has a width equal to the long side LX of the static exposure region.
  • the mask pattern is scanned and exposed on a region having a length corresponding to the scanning amount (movement amount) of the wafer W.
  • FIG. 12 is a diagram schematically showing a configuration between the boundary lens and the wafer in each example of the present embodiment.
  • the optical path between the boundary lens Lb and the wafer W is filled with the liquid Lm having a refractive index larger than 1.5 with respect to the exposure light.
  • the boundary lens Lb is a positive lens having a convex surface facing the mask M and a flat surface facing the wafer W.
  • the liquid Lm is circulated in the optical path between the boundary lens Lb and the wafer W using the water supply / drainage mechanism 21.
  • a step-and-scan type exposure apparatus that performs scanning exposure while moving the wafer W relative to the projection optical system PL, between the boundary lens Lb of the projection optical system PL and the wafer W from the start to the end of the scanning exposure.
  • the liquid Lm in the optical path of, for example, the technology disclosed in US Patent Application Publication No. 2007/242247, etc., JP-A-10-303114, US Pat. No. 6,191,429, etc. Can be used.
  • an optical path between a boundary lens Lb and a wafer W is supplied from a liquid supply device to a liquid adjusted to a predetermined temperature via a supply pipe and a discharge nozzle. Then, the liquid is recovered from the wafer W via the recovery pipe and the inflow nozzle by the liquid supply device.
  • the wafer holder table is configured in a container shape so that liquid can be stored, At the center (in the liquid), the wafer W is positioned and held by vacuum suction. Further, the lens barrel tip of the projection optical system PL reaches the liquid, and the optical surface on the wafer side of the boundary lens Lb reaches the liquid. In this way, by circulating the liquid as the immersion liquid at a minute flow rate, it is possible to prevent the liquid from being altered by the effects of antiseptic and mildewproofing. In addition, it is possible to prevent aberration fluctuations due to heat absorption of exposure light.
  • US Patent Application Publication No. 2007/242247, US Pat. No. 6,191,429 and Japanese Patent Laid-Open No. 10-303114 are incorporated by reference.
  • the aspherical surface is along the optical axis from the tangential plane at the apex of the aspherical surface to the position on the aspherical surface at the height y, where y is the height in the direction perpendicular to the optical axis.
  • distance (sag amount) is z
  • a vertex radius of curvature is r
  • a conical coefficient is kappa
  • n-th order aspherical coefficient was C n is expressed by the following equation (a).
  • a lens surface formed in an aspherical shape is marked with an asterisk (*) on the right side of the surface number.
  • the light from the mask M passes through the first imaging optical system K1, and the first intermediate pattern of the mask pattern is away from the optical axis in the vicinity of the first planar reflecting mirror FM1.
  • the light from the first intermediate image forms a second intermediate image of the mask pattern at a position away from the optical axis via the second imaging optical system K2.
  • the light from the second intermediate image forms a third intermediate image of the mask pattern at a position away from the optical axis in the vicinity of the second plane reflecting mirror FM2 via the third imaging optical system K3.
  • the light from the third intermediate image forms a final image of the mask pattern on the wafer W at a position away from the optical axis via the fourth imaging optical system K4.
  • the position where the intermediate image of the mask pattern is formed can be referred to as an object plane or a conjugate position optically conjugate with the image plane.
  • the first flat reflecting mirror M1 and the second flat reflecting mirror M2 are integrally configured as one optical member.
  • the optical axis of the first imaging optical system K1 and the optical axis of the fourth imaging optical system K4 are parallel to each other, and the Y direction of the first planar reflecting mirror M1 and the second planar reflecting mirror M2 It is eccentric by the interval of.
  • the first planar reflecting mirror as the first deflecting mirror that deflects the light from the first imaging optical system K1 and directs it to the second imaging optical system K2 is the first planar reflecting surface along the first plane.
  • the second planar reflecting mirror as the second deflecting mirror that deflects the light from the third imaging optical system K3 and directs it toward the fourth imaging optical system K4 is a second planar reflection along the second plane.
  • the first plane and the second plane are parallel to each other.
  • the optical axis of the first imaging optical system K1 and the optical axis of the second imaging optical system K2 intersect on the first plane, and the optical axis of the third imaging optical system K3 and the fourth imaging optical system.
  • the optical axis of K4 intersects on the second plane.
  • the optical axis of the second imaging optical system K2 and the optical axis of the third imaging optical system K3 are coaxial with each other.
  • the second imaging optical system K2 and the third imaging optical system K3 have a common optical axis.
  • the projection optical system PL is substantially telecentric on both the object side and the image side.
  • FIG. 13 is a diagram showing a lens configuration of the projection optical system according to the first example of the present embodiment.
  • the first imaging optical system K1 is composed of a plane parallel plate P1 and eleven lenses L11 to L111 in this order from the mask side.
  • An aperture stop AS1 (not shown) is disposed in the optical path between the lens L15 and the lens L16 of the first imaging optical system K1.
  • the second imaging optical system K2 includes three lenses L21 to L23 and a concave reflecting mirror CM1 with a concave surface facing the light incident side in order from the light incident side along the light traveling path. .
  • the third imaging optical system K3 is composed of, in order from the light incident side, three lenses L31 to L33 and a concave reflecting mirror CM2 having a concave surface facing the light incident side.
  • the fourth imaging optical system K4 includes, in order from the light incident side, thirteen lenses L41 to L413 and a plano-convex lens L414 (boundary lens Lb) having a plane facing the wafer side.
  • an aperture stop AS is disposed in the optical path between the lens L410 and the lens L411.
  • a position optically conjugate with the position where the aperture stop AS is disposed can be referred to as a pupil position of each imaging optical system.
  • a liquid (for example, water) Lm is filled.
  • All the light transmitting members including the plane parallel plate P1 and the boundary lens Lb are formed of an optical material (for example, quartz glass (SiO 2 )) having a refractive index of 1.5603261 with respect to the center wavelength of the used light.
  • ⁇ is the center wavelength of the exposure light
  • ⁇ is the magnitude (absolute value) of the projection magnification (imaging magnification of the entire system)
  • NA is the image side (wafer side).
  • the numerical aperture, Rb is the radius of the image circle IF on the wafer W, that is, the maximum image height of the effective imaging region ER on the image plane IM
  • Ra is the off-axis amount of the static exposure region ER
  • LX is the static exposure region.
  • ER represents the dimension along the X direction (long side dimension)
  • LY represents the dimension along the Y direction of the static exposure region ER (short side dimension).
  • the surface number is along the path along which the light beam travels from the mask surface that is the object surface (first surface) to the wafer surface that is the image surface (second surface).
  • r is the radius of curvature of each surface (vertical curvature radius: mm in the case of an aspherical surface)
  • d is the on-axis spacing of each surface, that is, the surface spacing (mm)
  • n is The refractive index with respect to the center wavelength is shown.
  • the sign of the surface interval d changes every time light is reflected.
  • the sign of the surface interval d is negative in the optical path from the first flat reflecting mirror FM1 to the first concave reflecting mirror CM1 and in the optical path from the second concave reflecting mirror CM2 to the second flat reflecting mirror FM2. Positive in the light path.
  • the curvature radius of the convex surface toward the mask side is positive, and the curvature radius of the concave surface toward the mask side is negative.
  • the radius of curvature of the convex surface is negative toward the light incident side along the light traveling path, and the radius of curvature of the concave surface is positive toward the light incident side.
  • the radius of curvature of the concave surface is negative toward the light incident side along the light traveling path, and the radius of curvature of the convex surface is positive toward the light incident side.
  • the radius of curvature of the convex surface is positive toward the light incident side, and the radius of curvature of the concave surface is negative toward the light incident side.
  • Table (1) is the same in the following Table (2), Table (3), and Table (4).
  • FIG. 14 (a) shows the aberration component Z17 and Z10 occurs when imparted with deformed according to the function FZ 17 to the reflecting surface CM1a the first concave reflector CM1 in the first embodiment.
  • FIG. 14B shows aberration components Z17 and Z10 generated when the same deformation as that of the first concave reflecting mirror CM1 is applied to the reflecting surface CM2a of the second concave reflecting mirror CM2 in the first embodiment.
  • FIG. 15A shows the first embodiment of the first concave reflecting mirror CM1 and the second concave reflecting mirror CM2 in cooperation, that is, the reflecting surface CM1a and the second concave reflecting mirror CM2 of the first concave reflecting mirror CM1.
  • the coefficients of the function FZ 17 representing the deformation to be imparted to the reflecting surface CM2a sign and magnitude appropriate shows a state that caused mainly 0-order aberration component (Z17).
  • FIG. 15B shows a state in which the primary aberration component (Z10) is mainly generated by the cooperative action of the first concave reflecting mirror CM1 and the second concave reflecting mirror CM2 in the first embodiment.
  • the projection optical system of the first embodiment is disposed in the optical path between the first surface and the second surface, includes a first concave reflecting mirror, and makes different surfaces optically conjugate with each other.
  • a first imaging optical unit, and a second concave reflecting mirror disposed in an optical path between the first imaging optical unit and the second surface, wherein different surfaces are optically conjugate with each other.
  • the second concave reflecting mirror is disposed on the first surface side from the second pupil position that is optically Fourier-transformed with the position of the first surface in the optical path of the second imaging optical unit. Therefore, good imaging performance can be achieved.
  • the horizontal axis indicates the X-direction position along the straight line connecting the positions ERa, ERb, and ERc (see FIG. 2) of the effective imaging region ER, and the vertical axis indicates the Zernike coefficient (unit: aberration component).
  • FIG. 16 is a diagram showing a lens configuration of the projection optical system according to the second example of the present embodiment.
  • the first imaging optical system K1 is composed of a plane parallel plate P1 and twelve lenses L11 to L112 in this order from the mask side.
  • the second imaging optical system K2 includes two lenses L21 and L22 and a concave reflecting mirror CM1 having a concave surface facing the light incident side in order from the light incident side along the light traveling path. .
  • the third imaging optical system K3 is composed of two lenses L31 and L32 in order from the light incident side, and a concave reflecting mirror CM2 having a concave surface directed to the light incident side.
  • the fourth imaging optical system K4 includes, in order from the light incident side, thirteen lenses L41 to L413 and a plano-convex lens L414 (boundary lens Lb) having a plane facing the wafer side.
  • an aperture stop AS is disposed in the optical path between the lens L410 and the lens L411.
  • Table (2) lists the values of the specifications of the projection optical system PL according to the second example.
  • the projection optical system of the second embodiment is disposed in the optical path between the first surface and the second surface, includes a first concave reflecting mirror, and makes different surfaces optically conjugate with each other.
  • a first imaging optical unit, and a second concave reflecting mirror disposed in an optical path between the first imaging optical unit and the second surface, wherein different surfaces are optically conjugate with each other.
  • a first imaging optical unit, wherein the first concave reflecting mirror is first from a first pupil position that is optically Fourier-transformed with the position of the first surface in the optical path of the first imaging optical unit.
  • FIG. 17 is a diagram showing a lens configuration of the projection optical system according to the third example of the present embodiment.
  • the first imaging optical system K1 is composed of a plane parallel plate P1 and 14 lenses L11 to L114 in this order from the mask side.
  • the second imaging optical system K2 is composed of one lens L21 and a concave reflecting mirror CM1 having a concave surface facing the light incident side in order from the light incident side along the light traveling path.
  • the third imaging optical system K3 is composed of, in order from the light incident side, three lenses L31 to L33 and a concave reflecting mirror CM2 having a concave surface facing the light incident side.
  • the fourth imaging optical system K4 includes, in order from the light incident side, fifteen lenses L41 to L415 and a plano-convex lens L416 (boundary lens Lb) having a plane facing the wafer side.
  • an aperture stop AS is disposed in the optical path between the lens L412 and the lens L413.
  • Table (3) lists the values of the specifications of the projection optical system PL according to the third example.
  • the projection optical system of the third embodiment is disposed in an optical path between the first surface and the second surface, includes a first concave reflecting mirror, and makes different surfaces optically conjugate with each other.
  • a first imaging optical unit, and a second concave reflecting mirror disposed in an optical path between the first imaging optical unit and the second surface, wherein different surfaces are optically conjugate with each other.
  • a first imaging optical unit, wherein the first concave reflecting mirror is first from a first pupil position that is optically Fourier-transformed with the position of the first surface in the optical path of the first imaging optical unit.
  • FIG. 18 is a diagram showing a lens configuration of the projection optical system according to the fourth example of the present embodiment.
  • the first imaging optical system K1 is composed of a plane parallel plate P1 and ten lenses L11 to L110 in this order from the mask side.
  • the second imaging optical system K2 includes two lenses L21 and L22 and a concave reflecting mirror CM1 having a concave surface facing the light incident side in order from the light incident side along the light traveling path. .
  • the third imaging optical system K3 is composed of two lenses L31 and L32 in order from the light incident side, and a concave reflecting mirror CM2 having a concave surface directed to the light incident side.
  • the fourth imaging optical system K4 includes, in order from the light incident side, twelve lenses L41 to L412 and a plano-convex lens L413 (boundary lens Lb) having a plane directed to the wafer side.
  • an aperture stop AS is disposed in the optical path between the lens L410 and the lens L411.
  • the following table (4) lists the values of the specifications of the projection optical system PL according to the fourth example.
  • the projection optical system of the fourth embodiment is disposed in the optical path between the first surface and the second surface, includes the first concave reflecting mirror, and makes different surfaces optically conjugate with each other.
  • a first imaging optical unit, and a second concave reflecting mirror disposed in an optical path between the first imaging optical unit and the second surface, wherein different surfaces are optically conjugate with each other.
  • a second imaging optical unit, and the first concave reflecting mirror is disposed at a first pupil position that is optically Fourier-transformed with the position of the first surface in the optical path of the first imaging optical unit.
  • the second concave reflecting mirror is disposed on the first surface side or the second surface side from the second pupil position that is optically Fourier-transformed with the position of the first surface in the optical path of the second imaging optical unit.
  • the projection optical system PL of each embodiment since the required conditional expression is satisfied, a function that expresses deformation applied to the reflecting surface CM1a of the first concave reflecting mirror CM1 and the reflecting surface CM2a of the second concave reflecting mirror CM2.
  • the present invention is not limited to the specific function FZ 17 , and the deformation according to the same function display is applied to the reflecting surface CM1a of the first concave reflecting mirror CM1 and the reflecting surface CM2a of the second concave reflecting mirror CM2.
  • the wavefront aberration of the projection optical system PL can be adjusted.
  • the deformation represented by the Zernike polynomial is applied to the reflection surface CM1a of the first concave reflection mirror CM1 and the reflection surface CM2a of the second concave reflection mirror CM2.
  • the function to be displayed is not limited to the Zernike polynomial, and may be a polynomial such as a power series, for example.
  • both the reflecting surface CM1a of the first concave reflecting mirror CM1 and the reflecting surface CM2a of the second concave reflecting mirror CM2 are deformed, but the other reflecting surface with respect to one reflecting surface shape. Since the wavefront aberration of the projection optical system PL can be adjusted by adjusting the shape, it is sufficient that at least one of the reflecting surface CM1a of the first concave reflecting mirror CM1 and the reflecting surface CM2a of the second concave reflecting mirror CM2 can be deformed. .
  • the projection optical system PL of the present embodiment for example, wavefront aberration caused due to light irradiation can be actively adjusted.
  • the fine pattern of the mask M can be projected and exposed to the wafer W with high accuracy by using the projection optical system PL capable of actively adjusting the wavefront aberration, and thus a good device. Can be manufactured.
  • the projection optical system PL is configured as a four-fold imaging type optical system including four imaging optical units K1, K2, K3, and K4.
  • the present invention is not limited to this.
  • a projection optical system including a first imaging optical unit including a first concave reflecting mirror and a second imaging optical unit including a second concave reflecting mirror for example, U.S. Pat. 812, 028, No. 5,668,673, No. 7,030,965, etc., the present invention can be applied.
  • the effective image formation region ER and the effective visual field region FR are set as rectangular regions separated from the optical axis AX of the projection optical system PL.
  • the present invention is not limited to this, and various forms are possible for the positional relationship between the effective imaging region and effective field region and the optical axis of the projection optical system, and the shape of the effective imaging region and effective field region.
  • the effective imaging region ER and the effective visual field region FR may have a polygonal shape such as an arc shape, a parallelogram shape, a trapezoidal shape, or a hexagonal shape.
  • the optical axis of the first imaging optical system K1 or the optical axis of the fourth imaging optical system K4 and the optical axes of the second and third imaging optical systems K2 and K3 are orthogonal to each other.
  • the optical axes of the second and third imaging optical systems K2 and K3 may be inclined by a predetermined angle with respect to the Y axis.
  • the reflection surface CM1a of the first concave reflecting mirror CM1 and the reflecting surface CM2a of the second concave reflecting mirror CM2 are deformed to control the aberration of the projection optical system.
  • an aberration control mechanism for giving a required temperature distribution to such a light transmitting member US Pat. No. 6,198,579, US Pat. No. 6,781,668, 7,817,249, Reference may be made to US Patent Publication No. 2008/123066.
  • an aberration control mechanism for controlling the aberration of the projection optical system by changing the position and posture of the optical member constituting the projection optical system may be provided.
  • variable pattern forming apparatus that forms a predetermined pattern based on predetermined electronic data can be used instead of a mask.
  • a spatial light modulation element including a plurality of reflection elements driven based on predetermined electronic data can be used.
  • An exposure apparatus using a spatial light modulator is disclosed, for example, in US Patent Publication No. 2007/0296936.
  • a transmissive spatial light modulator may be used, or a self-luminous image display element may be used.
  • the exposure apparatus of the above-described embodiment is manufactured by assembling various subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Is done.
  • various optical systems are adjusted to achieve optical accuracy
  • various mechanical systems are adjusted to achieve mechanical accuracy
  • various electrical systems are Adjustments are made to achieve electrical accuracy.
  • the assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus.
  • the exposure apparatus may be manufactured in a clean room where the temperature, cleanliness, etc. are controlled.
  • FIG. 19 is a flowchart showing a manufacturing process of a semiconductor device.
  • a metal film is vapor-deposited on a wafer W to be a semiconductor device substrate (step S40), and a photoresist, which is a photosensitive material, is applied on the vapor-deposited metal film.
  • Step S42 the pattern formed on the mask (reticle) M is transferred to each shot area on the wafer W (step S44: exposure process), and the transfer of the wafer W after the transfer is completed.
  • Development that is, development of the photoresist to which the pattern has been transferred is performed (step S46: development process).
  • step S48 processing step.
  • the resist pattern is a photoresist layer in which unevenness having a shape corresponding to the pattern transferred by the exposure apparatus of the above-described embodiment is generated, and the recess penetrates the photoresist layer. is there.
  • step S48 the surface of the wafer W is processed through this resist pattern.
  • the processing performed in step S48 includes, for example, at least one of etching of the surface of the wafer W or film formation of a metal film or the like.
  • the exposure apparatus of the above-described embodiment performs pattern transfer using the wafer W coated with the photoresist as a photosensitive substrate.
  • FIG. 20 is a flowchart showing a manufacturing process of a liquid crystal device such as a liquid crystal display element.
  • a pattern forming process step S50
  • a color filter forming process step S52
  • a cell assembling process step S54
  • a module assembling process step S56
  • a predetermined pattern such as a circuit pattern and an electrode pattern is formed on the glass substrate coated with a photoresist as the plate P using the exposure apparatus of the above-described embodiment.
  • an exposure process for transferring the pattern to the photoresist layer using the exposure apparatus of the above-described embodiment and development of the plate P to which the pattern is transferred, that is, development of the photoresist layer on the glass substrate are performed.
  • a developing step for generating a photoresist layer having a shape corresponding to the pattern, and a processing step for processing the surface of the glass substrate through the developed photoresist layer are performed.
  • a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three R, G, and B
  • a color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning direction.
  • a liquid crystal panel liquid crystal cell
  • a liquid crystal panel is assembled using the glass substrate on which the predetermined pattern is formed in step S50 and the color filter formed in step S52.
  • a liquid crystal panel is formed by injecting liquid crystal between a glass substrate and a color filter.
  • various components such as an electric circuit and a backlight for performing the display operation of the liquid crystal panel are attached to the liquid crystal panel assembled in step S54.
  • the present invention is not limited to application to an exposure apparatus for manufacturing a semiconductor device, for example, an exposure apparatus for a display device such as a liquid crystal display element formed on a square glass plate or a plasma display, It can also be widely applied to an exposure apparatus for manufacturing various devices such as an image sensor (CCD or the like), a micromachine, a thin film magnetic head, and a DNA chip. Furthermore, the present invention can also be applied to an exposure process (exposure apparatus) when manufacturing a mask (photomask, reticle, etc.) on which mask patterns of various devices are formed using a photolithography process.
  • an exposure apparatus for manufacturing a semiconductor device for example, an exposure apparatus for a display device such as a liquid crystal display element formed on a square glass plate or a plasma display
  • various devices such as an image sensor (CCD or the like), a micromachine, a thin film magnetic head, and a DNA chip.
  • the present invention can also be applied to an exposure process (exposure apparatus) when manufacturing a mask (photomask,
  • the ArF excimer laser light source is used.
  • the present invention is not limited to this, and other suitable light sources, for example, a KrF excimer laser light source for supplying laser light with a wavelength of 248 nm, a laser with a wavelength of 157 nm
  • a KrF excimer laser light source for supplying laser light with a wavelength of 248 nm, a laser with a wavelength of 157 nm
  • An F 2 laser light source that supplies light
  • an Ar 2 laser light source that supplies laser light with a wavelength of 126 nm, or the like can be used.
  • a CW (Continuous Wave) light source such as an ultrahigh pressure mercury lamp that emits bright lines such as g-line (wavelength 436 nm) and i-line (wavelength 365 nm).
  • a harmonic generator of a YAG laser or the like can also be used.
  • a single wavelength laser beam in an infrared region or a visible region oscillated from a DFB semiconductor laser or a fiber laser is used as vacuum ultraviolet light.
  • a harmonic that is amplified by a fiber amplifier doped with erbium (or both erbium and ytterbium) and wavelength-converted into ultraviolet light using a nonlinear optical crystal may be used.
  • the present invention is applied to the scanning exposure apparatus.
  • the present invention is not limited to this, and the mask and wafer (photosensitive substrate) are stationary with respect to the projection optical system.
  • the present invention can also be applied to a batch exposure type exposure apparatus that performs projection exposure in the above-described state.
  • the present invention is applied to an immersion type projection optical system mounted on the exposure apparatus.
  • the present invention is not limited to the immersion system and can be similarly applied to a dry projection optical system.
  • the present invention can be applied to an imaging optical system that forms an image of a first surface on a second surface.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)

Abstract

La présente invention porte sur un système optique de projection dans lequel, par exemple, une aberration d'onde due à une irradiation de lumière peut être réglée. Le système optique de projection de la présente invention forme une image d'une première surface sur une seconde surface. Le système optique de projection comporte : une première unité optique formant une image qui est agencée dans un trajet optique entre la première surface et la seconde surface, et qui comprend un premier miroir de réflexion à surface concave ayant une surface de réflexion pouvant être déformée ; une seconde unité optique formant une image qui est agencée dans un trajet optique entre la première unité optique formant une image et la seconde surface, et qui comprend un second miroir de réflexion à surface concave ayant une surface de réflexion pouvant être déformée.
PCT/JP2014/074896 2013-09-19 2014-09-19 Système optique de projection, procédé de réglage de système optique de projection, appareil d'exposition, procédé d'exposition et procédé de fabrication de dispositif WO2015041335A1 (fr)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017102273A (ja) * 2015-12-02 2017-06-08 株式会社ニコン 投影光学系、投影方法、投影光学系の調整方法、露光装置、露光方法、およびデバイス製造方法
JP2017102275A (ja) * 2015-12-02 2017-06-08 株式会社ニコン 投影光学系、投影光学系の調整方法、露光装置、露光方法、およびデバイス製造方法
JP2017102274A (ja) * 2015-12-02 2017-06-08 株式会社ニコン 投影光学系、投影方法、投影光学系の調整方法、露光装置、露光方法、およびデバイス製造方法
CN110582224A (zh) * 2017-04-28 2019-12-17 株式会社尼康 眼科装置
JP2021056461A (ja) * 2019-10-01 2021-04-08 キヤノン株式会社 投影光学系、走査露光装置および物品製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004317534A (ja) * 2003-04-11 2004-11-11 Nikon Corp 反射屈折型の結像光学系、露光装置、および露光方法
JP2005107362A (ja) * 2003-10-01 2005-04-21 Canon Inc 投影光学系及び露光装置、デバイスの製造方法
JP2007005558A (ja) * 2005-06-23 2007-01-11 Canon Inc 反射屈折型投影光学系及びそれを有する露光装置
JP2007013179A (ja) * 2005-07-01 2007-01-18 Carl Zeiss Smt Ag リソグラフィ投影対物レンズの補正方法およびリソグラフィ投影対物レンズ
JP2007508591A (ja) * 2003-10-17 2007-04-05 カール・ツァイス・エスエムティー・アーゲー 反射屈折投影対物レンズ
JP2008177575A (ja) * 2007-01-17 2008-07-31 Carl Zeiss Smt Ag マイクロリソグラフィのための投影光学系
JP2011013681A (ja) * 2006-08-14 2011-01-20 Carl Zeiss Smt Gmbh 瞳ミラーを有する反射屈折投影対物器械、投影露光装置及び方法
WO2012041459A2 (fr) * 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Système optique d'imagerie pour la microlithographie

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004317534A (ja) * 2003-04-11 2004-11-11 Nikon Corp 反射屈折型の結像光学系、露光装置、および露光方法
JP2005107362A (ja) * 2003-10-01 2005-04-21 Canon Inc 投影光学系及び露光装置、デバイスの製造方法
JP2007508591A (ja) * 2003-10-17 2007-04-05 カール・ツァイス・エスエムティー・アーゲー 反射屈折投影対物レンズ
JP2007005558A (ja) * 2005-06-23 2007-01-11 Canon Inc 反射屈折型投影光学系及びそれを有する露光装置
JP2007013179A (ja) * 2005-07-01 2007-01-18 Carl Zeiss Smt Ag リソグラフィ投影対物レンズの補正方法およびリソグラフィ投影対物レンズ
JP2011013681A (ja) * 2006-08-14 2011-01-20 Carl Zeiss Smt Gmbh 瞳ミラーを有する反射屈折投影対物器械、投影露光装置及び方法
JP2008177575A (ja) * 2007-01-17 2008-07-31 Carl Zeiss Smt Ag マイクロリソグラフィのための投影光学系
WO2012041459A2 (fr) * 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Système optique d'imagerie pour la microlithographie

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017102273A (ja) * 2015-12-02 2017-06-08 株式会社ニコン 投影光学系、投影方法、投影光学系の調整方法、露光装置、露光方法、およびデバイス製造方法
JP2017102275A (ja) * 2015-12-02 2017-06-08 株式会社ニコン 投影光学系、投影光学系の調整方法、露光装置、露光方法、およびデバイス製造方法
JP2017102274A (ja) * 2015-12-02 2017-06-08 株式会社ニコン 投影光学系、投影方法、投影光学系の調整方法、露光装置、露光方法、およびデバイス製造方法
CN110582224A (zh) * 2017-04-28 2019-12-17 株式会社尼康 眼科装置
JP2021056461A (ja) * 2019-10-01 2021-04-08 キヤノン株式会社 投影光学系、走査露光装置および物品製造方法
JP7332415B2 (ja) 2019-10-01 2023-08-23 キヤノン株式会社 投影光学系、走査露光装置および物品製造方法

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