WO2015029871A1 - 接着フィルムおよび半導体装置の製造方法 - Google Patents
接着フィルムおよび半導体装置の製造方法 Download PDFInfo
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- WO2015029871A1 WO2015029871A1 PCT/JP2014/071891 JP2014071891W WO2015029871A1 WO 2015029871 A1 WO2015029871 A1 WO 2015029871A1 JP 2014071891 W JP2014071891 W JP 2014071891W WO 2015029871 A1 WO2015029871 A1 WO 2015029871A1
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- Prior art keywords
- adhesive
- film
- layer
- adhesive film
- base material
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Classifications
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- B32B2307/736—Shrinkable
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B2307/748—Releasability
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/124—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape
- C09J2301/1242—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape the opposite adhesive layers being different
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2467/00—Presence of polyester
- C09J2467/006—Presence of polyester in the substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2477/00—Presence of polyamide
- C09J2477/006—Presence of polyamide in the substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2479/00—Presence of polyamine or polyimide
- C09J2479/08—Presence of polyamine or polyimide polyimide
- C09J2479/086—Presence of polyamine or polyimide polyimide in the substrate
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H01—ELECTRIC ELEMENTS
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Definitions
- the present invention relates to an adhesive film and a method for manufacturing a semiconductor device using the adhesive film.
- WLP wafer level package
- wiring of a circuit formed on a semiconductor wafer, electrode formation, and resin sealing are performed, and then dicing is performed.
- eWLB embedded Wafer Level Ball Grid Array
- a method of sticking a semiconductor chip on a supporting substrate using an adhesive film and sealing the semiconductor chip is employed.
- the adhesive film needs to fix the semiconductor chip to the support substrate in the sealing process or the like, while it has to be removed from the semiconductor chip together with the support substrate after sealing.
- the adhesive film is required to have contradictory characteristics.
- Patent Document 1 discloses a heat shrinkable film in which adhesive layers are formed on both surfaces of a base material made of a heat shrinkable film and exhibit a high shrinkage rate at 100 ° C. or lower.
- a resin layer A is formed on one side or both sides of a support film, and the support film has a linear thermal expansion coefficient at 20 to 200 ° C. of 3.0 ⁇ 10 ⁇ 5 / ° C. or less.
- a method is disclosed in which an adhesive film is attached to the back surface of a lead frame for protection and then peeled off after sealing. This support film is described as having a heat shrinkage of 0.15% or less when heated at 200 ° C. for 2 hours.
- Patent Document 3 discloses a laminated sheet in which a shrinkable film layer and a constraining layer that restrains the shrinkage of the shrinkable film layer are laminated. It is described that the heat shrinkage rate in the main shrinkage direction of the shrinkable film layer is 30 to 90% at 70 to 180 ° C.
- Patent Document 4 discloses a surface protective sheet for dicing using a heat-shrinkable film having a heat shrinkage rate of 3 to 90% in a temperature range of 40 to 180 ° C. And the processing method using this surface protection sheet for dicing is described. There is no description about use in resin molding.
- Patent Document 5 discloses a heat-peelable pressure-sensitive adhesive sheet in which a thermally expandable pressure-sensitive adhesive layer containing a foaming agent is formed on at least one surface of a base material including a composite film layer of a urethane polymer and a (meth) acrylic polymer. It is disclosed. It is described that the heat-shrinkable pressure-sensitive adhesive sheet has a thermal shrinkage at 150 ° C. of 97% or more.
- Patent Documents 1 to 5 have heat resistance and adhesiveness at the temperature during the mounting / resin molding process, and easily peelable in the process of peeling the semiconductor chip from the support after the resin molding. It did not have conflicting characteristics that would be demonstrated. Therefore, it could not be used for a semiconductor manufacturing process required to satisfy such characteristics, for example, eWLB technology.
- the present invention has been made in view of the above situation, and provides an adhesive film having the above-described characteristics, and further provides a method for manufacturing a semiconductor device using the adhesive film.
- a base material layer and a self-peeling adhesive layer are laminated,
- the base material layer is an adhesive film in which a heat shrinkage rate in the flow direction (MD heat shrinkage rate) and a heat shrinkage rate in the direction perpendicular to the flow direction (TD heat shrinkage rate) satisfy the following conditions: : (1) After heating at 150 ° C. for 30 minutes 0.4 ⁇
- a method for manufacturing a semiconductor device comprising:
- the adhesive film of the present invention can exhibit the contradictory characteristics depending on temperature conditions, such as heat resistance and adhesiveness at a predetermined temperature, and easy peelability at a temperature different from the temperature.
- the adhesive film of the present invention when used in a manufacturing method of a semiconductor device that requires such characteristics, it has heat resistance and adhesiveness at the temperature during the mounting process and the resin molding process, and after the resin molding In the step of peeling the semiconductor chip from the support, since it has easy peelability, a semiconductor device can be manufactured by a simple method.
- the method for manufacturing a semiconductor device using the adhesive film of the present invention is excellent in productivity and can improve the yield.
- the adhesive film 10 of the present embodiment is formed by laminating a base material layer 12 and a self-peeling adhesive layer 14.
- the base material layer 12 satisfies the following conditions in terms of heat shrinkage in the flow direction (MD heat shrinkage) and heat shrinkage in the direction orthogonal to the flow direction (TD heat shrinkage).
- the heat shrinkability of the resin film used as the base material layer 12 in the semiconductor chip sealing step can be determined.
- the temperature in the sealing step is about 150 ° C. at the maximum, and the thermal shrinkage of the resin film converges in a certain heating time.
- the heat shrinkage of the resin film as the base material layer at 150 ° C. is almost converged by heating for 30 minutes. Therefore, when the heat shrinkage rate of the resin film that is the base material layer 12 when heated at 150 ° C. for 30 minutes satisfies the above condition (1), the adhesive film 10 from the support substrate is sealed in the semiconductor chip sealing step. It can be determined that the peeling is suppressed.
- the heat shrinkability of the resin film used as the base material layer 12 in the step of peeling the sealed semiconductor chip (package) from the support substrate can be determined.
- the temperature in the sealing process is about 150 ° C. at the maximum.
- heating is performed at a temperature exceeding 150 ° C.
- the peeling from the support substrate is performed in a short time. Therefore, when the thermal contraction rate of the resin film that is the base material layer 12 when heated at 200 ° C., which is higher than the sealing process for 10 minutes, satisfies the condition (2), the package is peeled off from the support substrate. When doing, it can be judged that the adhesive film 10 peels easily from a support substrate.
- ” indicates the absolute value of the ratio between the MD direction shrinkage rate and the TD direction shrinkage rate, and is 0.4 or more, 2.5 or less,
- the shrinkage rate in the MD direction and the shrinkage rate in the TD direction have no direction dependency and are isotropic because they are 0.6 or more and 2.5 or less.
- stress due to the anisotropy of the shrinkage rate of the base material layer 12 hardly occurs, so that there is little warpage in the sealing step, and leakage and warpage of the sealing resin can be suppressed. Further, in the peeling process, there is little warping, package damage can be prevented, and peeling becomes easy.
- the “average of the thermal shrinkage in the MD direction and the thermal shrinkage in the TD direction” after heating at 150 ° C. for 30 minutes is 2% or less, preferably 1.8% or less.
- the “average of thermal shrinkage in MD direction and thermal shrinkage in TD direction” after heating at 200 ° C. for 10 minutes is 3% or more, preferably 3.5% or more.
- the base material layer 12 that satisfies the above conditions does not shrink at the temperature during the mounting process or the resin molding process in the method for manufacturing a semiconductor device to be described later, can exhibit heat resistance and adhesiveness, and Since it becomes possible to make it shrink in the process of peeling a semiconductor chip from a support body after resin molding, easy peelability can be exhibited.
- the adhesive film 10 of this embodiment can be suitably used as an adhesive film for manufacturing a semiconductor device.
- the storage elastic modulus E ′ at 180 ° C. of the base material layer 12 can be 1.0E + 6 or more and 2.0E + 8 or less, preferably 5.0E + 6 or more and 2.0E + 8 or less. If it is this range, it will have appropriate rigidity as a base material, and also the self-peelable adhesive layer 14 can be peeled from the end portion, and these are excellent in balance.
- the base material layer 12 can be composed of a single layer or a multilayer structure of two or more layers. It is comprised so that the thermal contraction rate as the whole base material layer 12 may satisfy
- a resin having high heat resistance that satisfies the above conditions can be used, and examples thereof include a polyester resin, a polyimide resin, and a polyamide resin. Of these, polyester resins or polyamide resins are preferable.
- polyester resins those described in JP-A-2009-172864, paragraphs 0026 to 0036, can be used. The well-known thing described in the international publication 2012/117784 pamphlet can be used.
- a polyester resin is particularly preferable, and examples thereof include polyethylene terephthalate resin, polyethylene naphthalate resin, and amorphous polyethylene terephthalate.
- the base material layer 12 can be used in the form of a resin film.
- the resin film used as the base material layer 12 can be obtained as an amorphous or low crystalline film by forming a resin having high heat resistance while inhibiting crystallization. For example, a method of rapidly cooling after melting the resin, a method of performing a heat treatment at a temperature exceeding the melting point, a method of stretching so as not to cause oriented crystallization, and the like can be mentioned. Copolymerization components other than the main component can be selected as appropriate, and crystallization can be inhibited with a comonomer.
- the layer thickness of the base material layer 12 is usually selected to be 500 ⁇ m or less (for example, 1 to 500 ⁇ m), preferably about 1 to 300 ⁇ m, more preferably about 5 to 250 ⁇ m.
- the resin film used for the base material layer may be a single layer or a multilayer body.
- the adhesive contained in the self-peeling adhesive layer 14 is an adhesive whose adhesive strength is reduced or lost by applying heat.
- a material that does not peel at 150 ° C. or lower and peels at a temperature exceeding 150 ° C. can be selected.
- the semiconductor element has an adhesive force that does not peel from the support plate during the manufacturing process of the semiconductor device.
- Examples of the adhesive contained in the self-releasable adhesive layer 14 include those containing gas generating components, those containing thermally expandable microspheres, and those whose adhesive strength is reduced by the crosslinking reaction of the adhesive components by heat. preferable.
- gas generating component an azo compound, an azide compound, a meltrum acid derivative, or the like is preferably used.
- inorganic foaming agents such as ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, and organic foams such as fluorinated alkanes, hydrazine compounds, semicarbazide compounds, triazole compounds, N-nitroso compounds, etc. Those containing an agent are also used.
- the gas generating component may be added to the adhesive (resin) or may be directly bonded to the resin.
- a gasified material that exhibits thermal expansion and encapsulated in a shell forming material can be used.
- a material that undergoes a cross-linking reaction due to energy and lowers the adhesive force a polymer that contains a polymerizable oligomer and that lowers the adhesive force when polymerized and cross-linked can be used. These components can be added to the adhesive (resin).
- the temperature at which the gas is generated, the temperature at which the thermally expandable microspheres thermally expand, and the temperature at which the crosslinking reaction occurs may be designed to exceed 150 ° C.
- the resin constituting the adhesive include acrylic resins, urethane resins, silicone resins, and polyolefin resins.
- the adhesive film 10 of the present embodiment may be formed by further laminating an adhesive layer 16 on the back surface of the base material layer 12 facing the self-peeling adhesive layer 14. Good.
- Adhesive layer 16 As the adhesive constituting the adhesive layer 16, a conventionally known adhesive can be used. When the adhesive film of this embodiment is used for manufacturing a wafer support system, a ceramic capacitor, or a semiconductor device, an adhesive with little adhesive residue is preferable from the viewpoint of reusing the support substrate. In particular, when a pressure-sensitive adhesive is used, the workability of the bonding process and the peeling process is excellent, and the adhesive residue is small, so that the yield of the semiconductor device can be improved.
- pressure-sensitive adhesives include natural rubber, polyisobutylene rubber, styrene / butadiene rubber, styrene / isoprene / styrene block copolymer rubber, recycled rubber, butyl rubber, polyisobutylene rubber, NBR, and other rubber-based polymers as base polymers.
- Examples thereof include a rubber-based pressure-sensitive adhesive; a silicone-based pressure-sensitive adhesive; a urethane-based pressure-sensitive adhesive; an acrylic-based pressure-sensitive adhesive.
- the base material may be composed of one kind or two or more kinds of ingredients. Particularly preferred is an acrylic pressure sensitive adhesive.
- the production of the acrylic pressure-sensitive adhesive can be appropriately selected from known production methods such as solution polymerization, bulk polymerization, emulsion polymerization, and various radical polymerizations.
- the obtained adhesive resin may be a random copolymer, a block copolymer, a graft copolymer or the like.
- the adhesive film of this embodiment can be used for manufacturing a semiconductor device, temporarily fixing a member, and the like, and can be particularly suitably used for e-WLB.
- the manufacturing method of the semiconductor device of this embodiment includes the following steps.
- Step (f): A wiring layer 26 including a pad (not shown) formed on the outermost surface, an exposed semiconductor chip 22 and a wiring (not shown) for electrically connecting the pad is formed into a semiconductor chip mold.
- the adhesive film 10 is stuck on the support substrate 20 so that the self-releasable adhesive layer 14 is on the support substrate 20 side (FIG. 2A).
- a protective film may be stuck on the surface of the self-peeling adhesive layer 14, and the protective film can be peeled off, and the exposed surface of the self-peeling adhesive layer 14 can be stuck on the surface of the support substrate 20.
- the support substrate 12 include a quartz substrate and a glass substrate.
- the semiconductor chip 22 is mounted on the base material layer 12 of the adhesive film 10 adhered on the support substrate 20 (FIG. 2B).
- Examples of the semiconductor chip include an IC, an LSI, a light emitting diode, and a light receiving element.
- the surface of the base material layer 12 may be subjected to a surface treatment in order to provide adhesion with the semiconductor chip 22.
- the semiconductor chip 22 is mounted on the base material layer 12.
- the semiconductor chip 22 may be mounted on the adhesive layer 16 stacked on the base material layer 12.
- a sealing layer 24 is formed so as to cover the semiconductor chip 22 and the adhesive film 10, and the sealing layer 24 is cured at a temperature of 150 ° C. or lower to form a semiconductor chip mold with a supporting substrate (FIG. 2C). ).
- the sealing material used for forming the sealing layer 24 is not particularly limited, and a generally used material such as a thermosetting molding material including an epoxy resin as a main component and a silica filler or the like is used. it can.
- sealing method there is a low-pressure transfer method, but sealing by injection molding, compression molding, casting or the like can also be performed. After sealing with the sealing layer 24, the semiconductor chip mold with a supporting base material in which the semiconductor chip 22 is sealed by being cured by heating at a temperature of 150 ° C. or less is obtained.
- the base material layer 12 of the adhesive film 10 has the heat shrinkability as described above after being heated at 150 ° C. for 30 minutes, and suppresses the peeling of the self-peeling adhesive layer 14 at a curing temperature of 150 ° C. or less. be able to.
- the base material layer 12 of the adhesive film 10 After heating for 10 minutes at 200 ° C., the base material layer 12 of the adhesive film 10 has an average of a thermal contraction rate in the MD direction and a thermal contraction rate in the TD direction of 3% or more, and the thermal contraction increases with the heating temperature. . Therefore, the increase in stress due to thermal contraction of the base material layer 12 becomes remarkable, and the adhesiveness of the self-peeling adhesive layer 14 can be reduced.
- the adhesive film 10 is further removed to obtain a semiconductor chip mold (FIG. 3E).
- the semiconductor chip mold is peeled from the adhesive film 10, it can be appropriately selected according to the material of the base material layer 12. It may be peeled mechanically, or may be peeled by reducing the adhesive force on the surface of the base material layer 12.
- the contact bonding layer 16 when it has the other contact bonding layer 16 which is not shown in figure on the base material layer 12, it is generally used as the contact bonding layer 16 according to the material of the semiconductor chip 22, and the conditions of a manufacturing process.
- an adhesive can be used, a self-peeling adhesive whose adhesive strength is reduced by thermal energy, such as an adhesive used for the self-peeling adhesive layer 14, may be used.
- the adhesive strength can be reduced with the same or higher thermal energy as the adhesive used for the surface to which the support substrate 12 is bonded.
- the method of removing the adhesive film 10 from the semiconductor chip mold can be appropriately selected according to the adhesive used on the surface of the adhesive film 10 to which the semiconductor chip mold is bonded.
- the adhesive may be peeled off mechanically, or may be peeled off by reducing the adhesive strength of the adhesive.
- Steps (f) and (g)) Next, the wiring layer 26 is formed on the exposed surface of the obtained semiconductor chip mold (FIG. 3F).
- the wiring layer 26 includes pads (not shown) that are external connection terminals formed on the outermost surface, and wirings (not shown) that electrically connect the exposed semiconductor chip 22 to the pads.
- the wiring layer 26 can be formed by a conventionally known method, and may have a multilayer structure.
- bump 28 is formed on the pad of wiring layer 26, and a semiconductor device can be obtained.
- the bump 28 include a solder bump and a gold bump.
- the solder bump can be formed, for example, by placing a pre-shaped solder ball on a pad that is an external connection terminal of the wiring film and heating (melting) the solder by heating.
- the gold bump can be formed by a method such as a ball bonding method, a plating method, or an Au ball transfer method. Then, it is cut into individual pieces by dicing.
- the adhesive film 10 of this embodiment in a method for manufacturing a semiconductor device, it has heat resistance and adhesiveness at the temperature during the mounting process and the resin molding process, and supports the semiconductor chip after the resin molding. In the process of peeling from the body, easy peelability is exhibited, so that the semiconductor device can be manufactured by a simple method. Therefore, the manufacturing method of the semiconductor device using the adhesive film 10 of this embodiment is excellent in productivity and can improve the yield of products.
- the adhesive film 10 of this embodiment was demonstrated by the aspect by which the self-peeling adhesive layer 14 was laminated
- the unevenness means about 5 to 300 ⁇ m.
- the adhesive film 10 of this embodiment showed the aspect by which the adhesive layer 16 was laminated
- an uneven absorption layer, a shock absorption layer, an easy adhesion layer, and the like may be formed.
- the self-peelable adhesive layer 14 surface side of the adhesive film 10 was attached to a 100 mm square square plate (SUS304) (supporting substrate 20).
- a disk having a diameter of 80 mm (made of iron with Ni plating) as the semiconductor chip 22 was attached to another adhesive layer of the double-sided adhesive tape (adhesive film 10) to obtain a laminate.
- a measurement jig was attached to the laminate, and the peelability of the support substrate 20 was evaluated.
- the peelability of the support substrate 20 was evaluated.
- a double-sided tape product name: P-223, manufactured by Nitto Denko Corporation
- a sample for measurement was placed on a heat block, heated for a predetermined time, and then subjected to self-peeling evaluation with a tensile tester. After fixing the laminate using a jig as shown in FIG.
- the hook is pulled upward by a tensile tester to evaluate self-peeling according to the following criteria. It was.
- the tensile tester uses an L-shaped jig with a magnet, and has a structure in which the magnet comes off when the tensile strength is 50 N or more. When the magnet was detached, it was evaluated that it did not peel. ⁇ : Peeling (within 60 seconds of heating), ⁇ : Peeling (within 180 seconds of heating), X: No peeling
- the base film layer portion of the semiconductor wafer surface protecting adhesive film was cut to prepare a rectangular (MD direction: 30 mm, TD direction: 10 mm) sample.
- the storage elastic modulus (machine direction) from 0 to 300 ° C. was measured using a dynamic viscoelasticity measuring device (Rheometrics: model: RSA-III).
- the measurement frequency was 1 Hz, and the distortion was 0.01 to 0.3%.
- the base film was cut into a square (MD direction: 15 cm, TD direction: 15 cm), and a spot (MD direction: 10 cm, TD direction: 10 cm) was opened on the base film with a punch to prepare a sample.
- a spot MD direction: 10 cm, TD direction: 10 cm
- the spot interval opened in the base film was measured. After the measurement, the sample was placed in an oven at a predetermined temperature. After a predetermined time, the sample was removed from the oven, and the spot interval was measured.
- the thermal shrinkage rate (%) before and after heating was calculated in the MD direction and TD direction based on the following formula.
- ⁇ 0.43 (t, 8.1 Hz, 1.6 H), 0.83 (s, 1.3 H), 0.94 (t, 8.1 Hz, 1.4 H), 1.27 (q, 8 .1 Hz, 1.2 H), 1.57 (s, 1.7 H), 1.75 (s, 3 H), 1.80 (q, 8.1 Hz, 0.8 H), 3.31 (s, 2 H) ), 5.22 (d, 12.0 Hz, 1H), 5.70 (d, 19.5 Hz, 1H), 6.65 (dd, 12.0, 19.5 Hz, 1H), 7.16 (d , 9.0 Hz, 2H), 7.31 (d, 9.0 Hz, 2H)
- acrylic adhesive S is a pressure sensitive adhesive
- the obtained adhesive coating solution was applied onto a PET film (release film) whose surface was release-treated using an applicator so that the dry film thickness was 10 ⁇ m, and then 120 The coating solution was dried at 5 ° C. for 5 minutes to obtain a PET film with a pressure-sensitive adhesive layer.
- the shrinkable PET film Teflex FT-50, thickness 50 ⁇ m, manufactured by Teijin DuPont Films Ltd.
- it was pasted on both sides of the shrinkable PET film (Teflex FT-50, thickness 50 ⁇ m, manufactured by Teijin DuPont Films Ltd.) as the base material layer 12 so that the pressure-sensitive adhesive layer is on the shrinkable PET film side. It was. Furthermore, it was set as double-sided adhesive film 1 by curing at 60 ° C. for 3 days (release film / pressure-sensitive adhesive layer / base film / pressure-sensitive adhesive layer / release film).
- the self-peeling adhesive layer is on the side of the shrinkable PET film on one surface of the shrinkable PET film (Teflex FT-50, thickness 50 ⁇ m, manufactured by Teijin DuPont Films Ltd.) which is the base material layer 12. Pasted on.
- 100 parts by weight of the acrylic adhesive S obtained in Production Example 3 was collected, and further adjusted to pH 9.5 by adding 9% by weight ammonia water.
- 0.8 part by weight of an epoxy-based crosslinking agent manufactured by Nippon Shokubai Chemical Industry Co., Ltd., trade name: Chemite Pz-33 was added to obtain an adhesive coating solution.
- the obtained adhesive coating solution was applied on a PET film (release film) whose surface was release-treated using an applicator so that the dry film thickness was 10 ⁇ m, and then 120 The coating solution was dried at 5 ° C. for 5 minutes to obtain a PET film with a pressure-sensitive adhesive layer. Subsequently, it was affixed on the surface opposite to the surface provided with the self-peeling adhesive layer on the shrinkable PET film so that the pressure-sensitive adhesive layer is on the shrinkable PET film side. Furthermore, it was set as double-sided adhesive film 2 by curing at 60 ° C. for 3 days (release film / self-peeling adhesive layer / base film / pressure-sensitive adhesive layer / release film).
- Production Example 7 A double-sided adhesive film 3 was obtained in the same manner as in Production Example 6 except that the base film was changed to a PET film (Lumirror, thickness 50 ⁇ m, manufactured by Toray Industries, Inc.) (release film / self-peeling adhesive layer / Base film / pressure-sensitive adhesive layer / release film).
- PET film Limirror, thickness 50 ⁇ m, manufactured by Toray Industries, Inc.
- a double-sided adhesive film 5 was obtained in the same manner as in Production Example 6 except that the base film was changed to a PET film (Teijin Tetron Film G2-50, thickness 50 ⁇ m, manufactured by Teijin DuPont Films Ltd.). / Self-peeling adhesive layer / base film / pressure-sensitive adhesive layer / release film).
- a double-sided adhesive film 6 was obtained in the same manner as in Production Example 6 except that the base film was changed to a PET film (Embret S-50, thickness 50 ⁇ m, manufactured by Unitika Ltd.) (Release film / self-peeling) Adhesive layer / base film / pressure-sensitive adhesive layer / release film).
- Example 1 The release film was peeled off from the double-sided adhesive film 2 cut into a circle having a diameter of 84 mm on a 100 mm square plate (SUS304), and the self-peeling adhesive layer side was attached. Thereafter, a disk having a diameter of 80 mm (made of iron with Ni plating) was attached to the pressure-sensitive adhesive layer of the double-sided adhesive film 2 to obtain a laminate. A measurement jig was attached to the laminate as shown in FIG. 4 to obtain a measurement sample. As shown in FIG. 4, after heating at 210 ° C. for 60 seconds in a heat block and confirming that the part where the self-peeling adhesive layer and the 100 mm square plate are bonded is peeled off, a tensile tester The peelability was evaluated. The evaluation results are shown in Table 1.
- Example 2 The release film was peeled from the double-sided adhesive film 2 cut into a circular shape with a diameter of 86 mm on a square plate (SUS304) of 100 mm square, and the self-peeling adhesive layer side was attached. Thereafter, a disk having a diameter of 80 mm (made of iron with Ni plating) was attached to the pressure-sensitive adhesive layer of the double-sided adhesive film 2 to obtain a laminate. A measurement jig was attached to the laminate as shown in FIG. 4 to obtain a measurement sample. As shown in FIG. 4, after heating at 210 ° C. for 60 seconds in a heat block and confirming that the part where the self-peeling adhesive layer and the 100 mm square plate are bonded is peeled off, a tensile tester The peelability was evaluated. The evaluation results are shown in Table 1.
- Example 3 A measurement sample was obtained in the same manner as in Example 1 except that the double-sided adhesive film 3 was used. Although it heated at 210 degreeC for 60 second with the heat block like FIG. 4, the part which the self-peeling adhesive layer and the 100 mm square plate adhered has not peeled. Further, heating was performed for 120 seconds (heating for a total of 180 seconds), and it was confirmed that a portion where the self-peeling adhesive layer and the 100 mm square plate were bonded was peeled off. Thereafter, peelability was evaluated with a tensile tester. The evaluation results are shown in Table 1.
- Comparative Examples 2 to 4 Evaluation was performed in the same manner as in Comparative Example 1 except that the double-sided adhesive films 4 to 6 were used and the self-peeling adhesive layer was attached to a 100 mm square plate (SUS304). The evaluation results are shown in Table 1.
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Abstract
Description
このパッケージの作製方法では、半導体チップを支持基板上に接着フィルムを用いて貼着し、その半導体チップを封止する手法が取られる。
特許文献2には、支持フィルムの片面又は両面に樹脂層Aが形成されており、支持フィルムは、20~200℃における線熱膨張係数が3.0×10-5/℃以下である半導体用接着フィルムを、リードフレーム裏面に貼り付けて保護し、封止後に引き剥がす方法が開示されている。この支持フィルムは、200℃で2時間加熱した際の加熱収縮率が0.15%以下であると記載されている。
[1] 基材層と、自己剥離性接着層とが積層されてなり、
前記基材層は、流れ方向の熱収縮率(MD方向の熱収縮率)と、流れ方向に直交する方向の熱収縮率(TD方向の熱収縮率)とが以下の条件を満たす、接着フィルム:
(1)150℃で30分間加熱後
0.4 ≦ |MD方向の熱収縮率/TD方向の熱収縮率| ≦2.5
MD方向の熱収縮率とTD方向の熱収縮率の平均 ≦2%
(2)200℃で10分間加熱後
0.4 ≦ |MD方向の熱収縮率/TD方向の熱収縮率| ≦2.5
MD方向の熱収縮率とTD方向の熱収縮率の平均 ≧3%
[2] 前記自己剥離性接着層は、熱により接着力が低下する、[1]に記載の接着フィルム。
[3] 前記基材層の、前記自己剥離性接着層に対向する面の裏面上に、さらに接着層が積層されてなる、[1]または[2]に記載の接着フィルム。
[4] 前記基材層の180℃における貯蔵弾性率E'が、1.0E+6以上、2.0E+8以下である、[1]乃至[3]のいずれかに記載の接着フィルム。
[5] 前記基材層は、ポリエステル系樹脂、ポリイミド系樹脂またはポリアミド系樹脂からなる、[1]乃至[4]のいずれかに記載の接着フィルム。
[6] 支持基板上に、[1]乃至[5]のいずれかに記載の接着フィルムを、前記自己剥離性接着層が該支持基板側となるように貼着する工程と、
前記接着フィルムの前記基材層上に半導体チップを搭載する工程と、
前記半導体チップと前記接着フィルムを覆うように封止材を塗布し、150℃以下の温度で該封止材を硬化させて、支持基材付き半導体チップモールドを形成する工程と、
150℃を超える温度に加熱して、前記自己剥離性接着層の接着力を低下させ、前記支持基材付き半導体チップモールドから前記支持基板を除去する工程と、
前記接着フィルムを除去し、半導体チップモールドを得る工程と、
を含む、半導体装置の製造方法。
本実施形態の接着フィルム10は、図1に示すように、基材層12と、自己剥離性接着層14とが積層されてなる。
基材層12は、流れ方向の熱収縮率(MD方向の熱収縮率)と、流れ方向に直交する方向の熱収縮率(TD方向の熱収縮率)とが以下の条件を満たす。
0.4 ≦ |MD方向の熱収縮率/TD方向の熱収縮率| ≦2.5
MD方向の熱収縮率とTD方向の熱収縮率の平均 ≦2%
(2)200℃で10分間加熱後
0.4 ≦ |MD方向の熱収縮率/TD方向の熱収縮率| ≦2.5
MD方向の熱収縮率とTD方向の熱収縮率の平均 ≧3%
半導体装置の製造方法において、封止工程での温度は最大150℃程度であり、樹脂フィルムの熱収縮は、ある程度の加熱時間で収束する。150℃における基材層である樹脂フィルムの熱収縮は、30分間加熱することによりほぼ収束する。したがって、150℃で30分間加熱したときの基材層12である樹脂フィルムの熱収縮率が、前記(1)の条件を満たすことにより、半導体チップの封止工程において、支持基板から接着フィルム10が剥離することを抑制していると判断することができる。
半導体装置の製造方法において、封止工程での温度は最大150℃程度であるため、本実施形態では、支持基板からの剥離工程では150℃を超える温度で加熱する。封止工程と異なり、支持基板からの剥離は短時間で行われることが望ましい。したがって、封止工程よりも高温である200℃で10分間加熱したときの基材層12である樹脂フィルムの熱収縮率が、前記(2)の条件を満たすことにより、支持基板からパッケージを剥離する際に、支持基板から接着フィルム10が容易に剥離すると判断することができる。
等方性であることにより、基材層12の収縮率の異方性による応力が発生し難いため、封止工程において、反りが少なく、封止樹脂の漏れ及び反りを抑制することができる。また、剥離工程において、反りが少なく、パッケージの損傷を防止することができるほか、剥離も容易になる。
また、基材層12が熱収縮し、基材層12の端部の接着強度が低下すれば剥離しやすくなる効果もある。さらに、基材層12が熱収縮する際に発生する応力で、剥離を促進することもできる。
この範囲であれば、基材としての適切な剛性を備え、さらに端部から自己剥離性接着層14の剥離が可能となり、これらのバランスに優れる。
基材層12は樹脂フィルムの形態で用いることができる。
基材層12の層厚は、通常500μm以下(例えば、1~500μm)を選択し、好ましくは1~300μm程度、より好ましくは5~250μm程度である。基材層に用いる樹脂フィルムは単層であってもよく多層体であってもよい。
本実施形態において、自己剥離性接着層14に含まれる接着剤は、熱を与えることで接着力が低下ないし喪失する接着剤である。150℃以下では剥離せず、150℃を超える温度で剥離する材料を選択することができる。例えば、半導体装置の製造工程中に半導体素子が支持板から剥離しない程度の接着力を有していることが好ましい。
例えば、気体発生成分としては、アゾ化合物、アジド化合物、メルドラム酸誘導体などが好適に用いられる。また、炭酸アンモニウム、炭酸水素アンモニウム、炭酸水素ナトリウム、亜硝酸アンモニウム等の無機系発泡剤や、塩フッ化アルカン、ヒドラジン系化合物、セミカルバジド系化合物、トリアゾール系化合物、N-ニトロソ系化合物等の有機系発泡剤を含むものも用いられる。気体発生成分は、接着剤(樹脂)に添加されていてもよく、樹脂に直接結合されていてもよい。
気体が発生する温度、熱膨張性の微小球が熱膨張する温度、架橋反応する温度が、150℃を超える温度になるように設計すればよい。
接着剤を構成する樹脂としては、アクリル系樹脂、ウレタン系樹脂、シリコーン系樹脂、ポリオレフィン系樹脂等を挙げることができる。
接着層16を構成する接着剤としては、従来公知の接着剤が使用できる。本実施形態の接着フィルムを、ウエハサポートシステムやセラミックコンデンサや半導体装置の製造に用いる場合、支持基板を再利用する観点から糊残りが少ない接着剤が好ましい。特に、感圧接着剤を用いると、接着工程や剥離工程の作業性に優れ、さらに糊残りが少ないことから、半導体装置の歩留まりを向上させることができる。
以下、図1(i)の接着フィルム10を用いた半導体装置の製造方法について説明する。
本実施形態の半導体装置の製造方法は以下の工程を有する。
工程(a):支持基板20上に、接着フィルム10を、自己剥離性接着層14が支持基板20側となるように貼着する(図2(a))。
工程(b):接着フィルム10の基材層12上に半導体チップ22を搭載する(図2(b))。
工程(c):半導体チップ22と接着フィルム10を覆うように封止層24を形成し、150℃以下の温度で封止層24を硬化させて、支持基材付き半導体チップモールドを形成する(図2(c))。
工程(d):150℃を超える温度に加熱して、自己剥離性接着層14の接着力を低下させ、支持基材付き半導体チップモールドから支持基板20を除去する(図3(d))。
工程(e):接着フィルム10を除去し、半導体チップモールドを得る(図3(e))。
工程(f):最外面に形成されたパッド(不図示)と、露出した半導体チップ22と該パッドとを電気的に接続する配線(不図示)と、を備える配線層26を、半導体チップモールドの露出面に形成する(図3(f))。
工程(g):パッド上にバンプ28を形成する(図3(g))。
以下、工程順に説明する。
まず、支持基板20上に、接着フィルム10を、自己剥離性接着層14が支持基板20側となるように貼着する(図2(a))。自己剥離性接着層14面上には保護フィルムが貼付けられていてもよく、当該保護フィルムを剥がし、自己剥離性接着層14の露出面を支持基板20表面に貼着することができる。
支持基板12としては石英基板、ガラス基板等を挙げることができる。
次いで、支持基板20上に貼着された、接着フィルム10の基材層12上に半導体チップ22を搭載する(図2(b))。
なお、本実施形態においては基材層12上に半導体チップ22を搭載する態様によって示すが、基材層12上に積層された接着層16上に半導体チップ22を搭載することもできる。
半導体チップ22と接着フィルム10を覆うように封止層24を形成し、150℃以下の温度で封止層24を硬化させて、支持基材付き半導体チップモールドを形成する(図2(c))。
封止層24の形成に用いる封止材は、特に限定されず、エポキシ樹脂を主成分として、シリカ充填材等を加えた熱硬化性成形材料等の一般的に使用されるものを用いることができる。
半導体チップ22を封止した後、150℃を超える温度に加熱して、自己剥離性接着層14の接着力を低下させ、支持基材付き半導体チップモールドから支持基板20を除去する(図3(d))。
支持基板20を除去した後、さらに接着フィルム10を除去し、半導体チップモールドを得る(図3(e))。
接着フィルム10から、半導体チップモールドを剥離する場合には、基材層12の材質にあわせて適宜選択できる。機械的に剥離してもよいし、基材層12表面の接着力を低下させて剥離してもよい。
次いで、得られた半導体チップモールドの露出面に、配線層26を形成する(図3(f))。
その後、ダイシングにより個片に切断される。
支持基板20として、100mm正方の角板(SUS304)、接着フィルム10として製造例で得られた両面接着フィルム、半導体チップ22として直径80mmの円板(Niメッキ付鉄製)からなる積層体を用い、支持基板20の自己剥離性評価を行った。
100mm正方の角板(SUS304)(支持基板20)に、接着フィルム10の、自己剥離性接着層14面側を貼り付けた。そして、半導体チップ22としての直径80mmの円板(Niメッキ付鉄製)を両面接着テープ(接着フィルム10)の別の接着層に貼り付け、積層体とした。この積層体に測定用治具を取り付け、支持基板20の剥離性評価を行った。なお、実施例においては、支持基板20と接着フィルム10との界面の自己剥離性の試験中に、半導体チップ22と接着フィルム10との界面で剥離が生じるのを防ぐため、測定用として補強用両面テープ(製品名:P-223、日東電工社製)を用いた。
測定用サンプルをヒートブロックの上に設置し、所定の時間加熱した後、引張試験機にて自己剥離性評価を行った。
図4のように治具を用いて積層体を固定し、実施例に記載の処理を施した後、引張試験機にてフックを上方へ引っ張ることで自己剥離性の評価を下記基準にしたがって行った。引張試験機は磁石付きL字治具を用いており、引張強度が50N以上で磁石が外れる構造である。磁石が外れた場合は、剥離しないと評価した。
○:剥離(加熱60秒以内)、△:剥離(加熱180秒以内)、×:剥離しない
半導体ウェハ表面保護用粘着フィルムの基材フィルム層部分を切断し、長方形(MD方向:30mm、TD方向:10mm)の試料を作製した。動的粘弾性測定装置(レオメトリックス社製:形式:RSA-III)を用いて、0~300℃までの貯蔵弾性率(機械方向)を測定した。測定周波数は、1Hzとし、歪みは0.01~0.3%とした。
基材フィルムを正方形(MD方向:15cm、TD方向:15cm)に切断し、パンチでスポット(MD方向:10cm、TD方向:10cm)を基材フィルムに開け、試料を作製した。2次元測定機((株)ミツトヨ製:形式:CRYSTAL*μV606)を用いて、基材フィルムに開けられたスポット間隔を測定した。測定後、試料を所定温度のオーブン内にサンプルを静置した。所定時間後に該サンプルをオーブンから取り出し、スポット間隔を測定した。加熱前後での熱収縮率(%)を以下の式に基づいて、MD方向、TD方向について算出した。試料10枚について測定しその基材フィルムの熱収縮率とした。但し式中のL0は加熱前のスポット間隔、Lは加熱後のスポット間隔を示す。
熱収縮率(%)=100×(L-L0)/L0
500mL4口フラスコにメチルマロン酸(東京化成工業(株)製)100g及び無水酢酸100gを装入した。98%硫酸0.5gを続けて装入した後、滴下漏斗にてメチルエチルケトン75gを1時間かけて滴下した。室温にて24時間攪拌した後、酢酸エチル200g及び蒸留水300gを加えて分液ロートで有機層の抽出を行った。得られた有機層をエバポレーターで溶媒を留去することで、2-エチル-2,5-ジメチル-1,3-ジオキサン-4,6-ジオンが75g得られた。H1NMR(300MHz)を測定したところ、以下のようなピークが得られた。δ=1.04-1.12(m,3H),1.57-1.61(m,3H),1.71(s,1.12H),1.77(s,1.92H),1.95-2.16(m,2H),3.53-5.65(m,1H)
500mL4口フラスコに製造例1で合成した2-エチル-2,5-ジメチル-1,3-ジオキサン-4,6-ジオン92g及びジメチルホルムアミド100gを装入した。炭酸カリウム95gを続けて装入した後、滴下漏斗にて4-クロロメチルスチレン97gを1時間かけて滴下した。40℃にて24時間攪拌した後、酢酸エチル400gを加えヌッチェで生成した固体を濾別した。蒸留水300mLを用いて、分液ロートで2回洗浄を行った後、エバポレーターで溶媒を留去することで、5-(p-スチリルメチル)-2-エチル-2,5-ジメチル-1,3-ジオキサン-4,6-ジオンが132g得られた。H1NMR(300MHz)を測定したところ、以下のようなピークが得られた。δ=0.43(t,8.1Hz,1.6H),0.83(s,1.3H),0.94(t,8.1Hz,1.4H),1.27(q,8.1Hz,1.2H),1.57(s,1.7H),1.75(s,3H),1.80(q,8.1Hz,0.8H),3.31(s,2H),5.22(d,12.0Hz,1H),5.70(d,19.5Hz,1H),6.65(dd,12.0,19.5Hz,1H),7.16(d,9.0Hz,2H),7.31(d,9.0Hz,2H)
重合反応機に脱イオン水150重量部、重合開始剤として4,4'-アゾビス-4-シアノバレリックアシッド(大塚化学(株)製、商品名:ACVA)を0.625重量部、アクリル酸-2-エチルヘキシル62.25重量部、アクリル酸-n-ブチル18重量部、及びメタクリル酸メチル12重量部、メタクリル酸-2-ヒドロキシエチル3重量部、メタクリル酸2重量部、及びアクリルアミド1重量部、ポリテトラメチレングリコールジアクリレート〔日本油脂(株)製、商品名:ADT-250〕1重量部、ポリオキシエチレンノニルフェニルエーテル(エチレンオキサイドの付加モル数の平均値:約20)の硫酸エステルのアンモニウム塩のベンゼン環に重合性の1-プロペニル基を導入したもの〔第一工業製薬(株)製、商品名:アクアロンHS-10〕0.75重量部を装入し、攪拌下で70~72℃において8時間乳化重合を実施し、アクリル系樹脂エマルションを得た。これを9重量%アンモニア水で中和(pH=7.0)し、固形分42.5重量%のアクリル系接着剤Sとした(アクリル系接着剤Sは感圧接着剤)。
500mLの4口フラスコに、製造例2で合成した5-(p-スチリルメチル)-2-エチル-2,5-ジメチル-1,3-ジオキサン-4,6-ジオン15g、アクリル酸ブチル20g、アクリル酸2-エチルヘキシル63g、メタクリル酸2g及び酢酸エチル100gを加えて室温にて混合した。さらに、2,2'-アゾビスバレロニトリル0.2gを加えて、75℃まで昇温した後、10時間攪拌を続けることで、分子量30万のアクリル系接着剤Aを得た(アクリル系接着剤Aは自己剥離性の接着剤)。示差走査熱量分析((株)島津製作所製、DSC-60)によりガラス転移点を測定したところ、14℃であった。
製造例3で得られたアクリル系接着剤S100重量部を採取し、さらに9重量%アンモニア水を加えてpH9.5に調整した。次いで、エポキシ系架橋剤〔日本触媒化学工業(株)製、商品名:ケミタイトPz-33〕0.8重量部を添加して接着剤塗工液を得た。
さらに60℃にて3日間養生することで両面接着フィルム1とした(離型フィルム/感圧接着層/基材フィルム/感圧接着層/離型フィルム)。
製造例4で得られたアクリル系接着剤A 100重量部及びエポキシ化合物(三菱ガス化学(株)製、TETRAD-C)2重量部、酢酸エチル50重量部を加えて接着剤塗工液とした。
得られた接着剤塗工液を、表面が離形処理されたPETフィルム(離型フィルム)上にアプリケータを用いて乾燥皮膜の厚さが10μmの厚みになるように塗工した後、120℃で5分間加熱して塗工液を乾燥させ、自己剥離性接着層付きPETフィルムを得た。次いで、基材層12である収縮性PETフィルム(テフレックスFT-50、厚さ50μm、帝人デュポンフィルム株式会社製)の一方の面に、自己剥離性接着層が収縮性PETフィルム側となるように貼り付けた。
さらに、製造例3で得られたアクリル系接着剤S100重量部を採取し、さらに9重量%アンモニア水を加えてpH9.5に調整した。次いで、エポキシ系架橋剤〔日本触媒化学工業(株)製、商品名:ケミタイトPz-33〕0.8重量部を添加して接着剤塗工液を得た。
得られた接着剤塗工液を、表面が離形処理されたPETフィルム(離型フィルム)上にアプリケータを用いて乾燥皮膜の厚さが10μmの厚みになるように塗工した後、120℃で5分間加熱して塗工液を乾燥させ、感圧接着層付きPETフィルムを得た。次いで、収縮性PETフィルム上の、自己剥離性接着層を備える面とは反対側の面に、感圧接着層が収縮性PETフィルム側となるように貼り付けた。
さらに60℃にて3日間養生することで両面接着フィルム2とした(離型フィルム/自己剥離性接着層/基材フィルム/感圧接着層/離型フィルム)。
基材フィルムをPETフィルム(ルミラー、厚さ50μm、東レ株式会社製)に変更した以外は、製造例6と同様にして、両面接着フィルム3を得た(離型フィルム/自己剥離性接着層/基材フィルム/感圧接着層/離型フィルム)。
基材フィルムをPETフィルム(AD-50、厚さ50μm、帝人デュポンフィルム株式会社製)に変更した以外は、製造例6と同様にして、両面接着フィルム4を得た(離型フィルム/自己剥離性接着層/基材フィルム/感圧接着層/離型フィルム)。
基材フィルムをPETフィルム(テイジンテトロンフィルムG2-50、厚さ50μm、帝人デュポンフィルム株式会社製)に変更した以外は、製造例6と同様にして、両面接着フィルム5を得た(離型フィルム/自己剥離性接着層/基材フィルム/感圧接着層/離型フィルム)。
100mm正方の角板(SUS304)に、直径84mmの円形に切った両面接着フィルム2から離型フィルムを剥離し、自己剥離性接着層側を貼り付けた。その後、直径80mmの円板(Niメッキ付鉄製)を両面接着フィルム2の感圧接着層に貼り付け、積層体とした。
この積層体に図4のように測定用治具を取り付け、測定用サンプルとした。
図4のようにヒートブロックにて210℃で60秒間加熱を行い、自己剥離性接着層と100mm正方の角板とが接着している部分が剥離しているのを確認した後、引張試験機にて剥離性評価を行った。評価結果を表1に示す。
100mm正方の角板(SUS304)に、直径86mmの円形に切った両面接着フィルム2から離型フィルムを剥離し、自己剥離性接着層側を貼り付けた。その後、直径80mmの円板(Niメッキ付鉄製)を両面接着フィルム2の感圧接着層に貼り付け、積層体とした。
この積層体に図4のように測定用治具を取り付け、測定用サンプルとした。
図4のようにヒートブロックにて210℃で60秒間加熱を行い、自己剥離性接着層と100mm正方の角板とが接着している部分が剥離しているのを確認した後、引張試験機にて剥離性評価を行った。評価結果を表1に示す。
両面接着フィルム3を用いた以外は実施例1と同様にして測定用サンプルを得た。図4のようにヒートブロックにて210℃で60秒間加熱したが、自己剥離性接着層と100mm正方の角板とが接着している部分は剥離していなかった。さらに120秒間加熱し(合計180秒間加熱)、自己剥離性接着層と100mm正方の角板とが接着している部分が剥離しているのを確認した。その後、引張試験機にて剥離性評価を行った。評価結果を表1に示す。
100mm正方の角板(SUS304)に、直径84mmの円形に切った両面接着フィルム1から離型フィルムを剥離し、一方の感圧接着層側を貼り付けた。その後、直径80mmの円板(Niメッキ付鉄製)を両面接着フィルム1の他方の面に貼り付け、積層体とした。
この積層体に図4のように測定用治具を取り付け測定用サンプルとした。
図4のようにヒートブロックにて210℃で60秒間加熱したが、感圧接着層と100mm正方の角板とが接着している部分は剥離していなかった。さらに120秒間加熱したが(合計180秒間加熱)、感圧接着層と100mm正方の角板とが接着している部分は剥離していなかった。その後、引張試験機にて剥離性評価を行った。評価結果を表1に示す。
両面接着フィルム4~6を用い、自己剥離性接着層を100mm正方の角板(SUS304)に貼り付けた以外は比較例1と同様にして評価した。評価結果を表1に示す。
Claims (6)
- 基材層と、自己剥離性接着層とが積層されてなり、
前記基材層は、流れ方向の熱収縮率(MD方向の熱収縮率)と、流れ方向に直交する方向の熱収縮率(TD方向の熱収縮率)とが以下の条件を満たす、接着フィルム:
(1)150℃で30分間加熱後
0.4 ≦ |MD方向の熱収縮率/TD方向の熱収縮率| ≦2.5
MD方向の熱収縮率とTD方向の熱収縮率の平均 ≦2%
(2)200℃で10分間加熱後
0.4 ≦ |MD方向の熱収縮率/TD方向の熱収縮率| ≦2.5
MD方向の熱収縮率とTD方向の熱収縮率の平均 ≧3% - 前記自己剥離性接着層は、熱により接着力が低下する、請求項1に記載の接着フィルム。
- 前記基材層の、前記自己剥離性接着層に対向する面の裏面上に、さらに接着層が積層されてなる、請求項1または2に記載の接着フィルム。
- 前記基材層の180℃における貯蔵弾性率E'が、1.0E+6以上、2.0E+8以下である、請求項1乃至3のいずれかに記載の接着フィルム。
- 前記基材層は、ポリエステル系樹脂、ポリイミド系樹脂またはポリアミド系樹脂からなる、請求項1乃至4のいずれかに記載の接着フィルム。
- 支持基板上に、請求項1乃至5のいずれかに記載の接着フィルムを、前記自己剥離性接着層が該支持基板側となるように貼着する工程と、
前記接着フィルムの前記基材層上に半導体チップを搭載する工程と、
前記半導体チップと前記接着フィルムを覆うように封止材を塗布し、150℃以下の温度で該封止材を硬化させて、支持基材付き半導体チップモールドを形成する工程と、
150℃を超える温度に加熱して、前記自己剥離性接着層の接着力を低下させ、前記支持基材付き半導体チップモールドから前記支持基板を除去する工程と、
前記接着フィルムを除去し、半導体チップモールドを得る工程と、
を含む、半導体装置の製造方法。
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KR20180133949A (ko) * | 2015-09-01 | 2018-12-17 | 린텍 가부시키가이샤 | 점착 시트 |
JP2017177463A (ja) * | 2016-03-29 | 2017-10-05 | 三井化学東セロ株式会社 | 成形品の外観に優れるプロセス用離型フィルム、その用途、及びそれを用いた樹脂封止半導体の製造方法 |
US11034864B2 (en) | 2017-01-20 | 2021-06-15 | Mitsui Chemicals Tohcello, Inc. | Adhesive film having adhesive resin layers and method of manufacturing electronic apparatus using the adhesive film |
JPWO2018135546A1 (ja) * | 2017-01-20 | 2019-11-14 | 三井化学東セロ株式会社 | 粘着性フィルムおよび電子装置の製造方法 |
WO2018135546A1 (ja) * | 2017-01-20 | 2018-07-26 | 三井化学東セロ株式会社 | 粘着性フィルムおよび電子装置の製造方法 |
JPWO2019188543A1 (ja) * | 2018-03-30 | 2021-03-11 | 三井化学東セロ株式会社 | 電子装置の製造方法 |
JP7069297B2 (ja) | 2018-03-30 | 2022-05-17 | 三井化学東セロ株式会社 | 電子装置の製造方法 |
US11848215B2 (en) | 2018-03-30 | 2023-12-19 | Mitsui Chemicals Tohcello, Inc. | Method for manufacturing electronic device |
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WO2020071159A1 (ja) * | 2018-10-05 | 2020-04-09 | 三井化学東セロ株式会社 | 粘着性フィルムおよび電子装置の製造方法 |
Also Published As
Publication number | Publication date |
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JPWO2015029871A1 (ja) | 2017-03-02 |
US20160208144A1 (en) | 2016-07-21 |
EP3040390A1 (en) | 2016-07-06 |
EP3040390A4 (en) | 2017-04-26 |
KR20160034392A (ko) | 2016-03-29 |
EP3040390B1 (en) | 2019-07-17 |
SG11201601300TA (en) | 2016-03-30 |
CN105492557B (zh) | 2018-11-02 |
CN105492557A (zh) | 2016-04-13 |
JP6138259B2 (ja) | 2017-05-31 |
TW201514015A (zh) | 2015-04-16 |
PT3040390T (pt) | 2019-09-05 |
US9822284B2 (en) | 2017-11-21 |
PH12016500381A1 (en) | 2016-05-16 |
TWI633013B (zh) | 2018-08-21 |
KR101785883B1 (ko) | 2017-10-16 |
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