WO2015027996A1 - Procédé de production de sous-modules solaires par réalisation de tranchées d'isolation électriquement isolantes dans un module solaire en couches minces et procédé de production d'un module solaire en couches minces doté de telles tranchées d'isolation - Google Patents
Procédé de production de sous-modules solaires par réalisation de tranchées d'isolation électriquement isolantes dans un module solaire en couches minces et procédé de production d'un module solaire en couches minces doté de telles tranchées d'isolation Download PDFInfo
- Publication number
- WO2015027996A1 WO2015027996A1 PCT/DE2014/100308 DE2014100308W WO2015027996A1 WO 2015027996 A1 WO2015027996 A1 WO 2015027996A1 DE 2014100308 W DE2014100308 W DE 2014100308W WO 2015027996 A1 WO2015027996 A1 WO 2015027996A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- thin
- thin film
- laser
- laser beam
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 238000009413 insulation Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000005520 cutting process Methods 0.000 claims abstract description 16
- 239000006096 absorbing agent Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims description 89
- 238000002955 isolation Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000005538 encapsulation Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract 4
- 230000005855 radiation Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- Front electrode structure is formed as a combination of a transparent thin film of a conductive oxide and a mesh-like, thicker layer in the form of an electrode collection structure.
- the shock wave generated in the region of the laser pulse leads to an explosive detachment of the complete thin-film package, which is located along the direction of movement of the laser-induced shockwave. Because this shockwave starting from the interface
- the substrate is rectangular with a first edge length and a second edge length, a top edge and a bottom edge, spaced by an amount of 10% to 15% of the first or the second edge length parallel to
- Thin-film solar cells with a front encapsulation element Thin-film solar cells with a front encapsulation element
- Embodiment of a thin-film solar module with three horizontal isolation trenches Embodiment of a thin-film solar module with three horizontal isolation trenches
- Embodiment of a thin-film solar module with four horizontal isolation trenches Embodiment of a thin-film solar module with four horizontal isolation trenches
- FIG. 1 shows a purely schematic representation of a first embodiment of a thin-film solar module with three horizontal insulating trenches 11, 12, 13. The monolithically interconnected
- a third isolation trench 13 extends parallel to the two remaining isolation trenches 11, 12 in the middle between these two.
- Each of the three insulating trenches 11, 12, 13 cuts through all the thin-film solar cells except for the outermost two, which are each arranged adjacent to the two long longitudinal edges of the substrate 1. These two outermost thin-film solar cells serve as so-called contact cells, the parallel shading by the
- Isolation trenches formed sub-solar modules. Between the outer edges of the substrate 1 and the adjacent insulating trenches 11, 12 and between the
- Figure 2 shows a purely schematic representation of a second embodiment of a thin-film solar module with four horizontal isolation trenches 11, 12, 13,14. Otherwise, the Kantanmene the substrate 1 with those of Figure 1 match. All other explanations regarding FIG. 1 also apply accordingly.
- In contrast to the first embodiment are two more Insulating trenches 13, 14 equidistant to each other and to the outside arranged first two isolation trenches 11 and 12 are arranged.
- Silicon oxynitride is formed.
- the barrier thin film 1a is followed by the metallic back electrode thin film 2, followed by the absorbent thin film 3 and the front electrode pattern 4.
- This front electrode pattern 4 is composed of a front electrode thin film 40 of transparent electrically conductive oxide and an electrode collector structure 41.
- the electrode collector structure may have a thickness other than the listed thin films be made in the range of many microns.
- FIG. 5 shows, in a schematic, not to scale, sectional representation, as in further production steps, the structure of sub-modules shown in FIG. 4 by means of an applied layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
La présente invention concerne un procédé pour produire des sous-modules solaires par réalisation de tranchées d'isolation dans un module solaire en couches minces, composé de cellules solaires en couches minces interconnectées de manière monolithique, ledit procédé comprenant les étapes suivantes : disposer d'un laser présentant une longueur d'onde laser, disposer d'un substrat (1) transparent à ladite longueur d'onde laser, la première face du substrat (1) présentant une pluralité de cellules solaires en couches minces connectées de manière monolithique, qui se composent d'une couche mince d'électrode de retour (2) métallique, d'une couche mince absorbante (3) disposée sur la couche mince d'électrode de retour (2) métallique et d'une structure d'électrode avant (4) disposée dessus, projeter un faisceau laser (L) sur le substrat, déplacer le faisceau laser (L) pour produire au moins une tranchée d'isolation (11, 12, 13, 14). Selon l'invention, il est prévu de projeter le faisceau laser (L) sur la seconde face du substrat (1), de le faire arriver sur la couche mince d'électrode de retour (2) métallique, à travers le substrat (1), et de l'ajuster avec des impulsions laser situées dans la plage des picosecondes ou dans celle des femtosecondes, de manière à détacher du substrat (1), le long de la ligne de coupe (S), la couche mince absorbante (3) disposée sur la couche mince d'électrode de retour métallique et la structure d'électrode avant (4) disposée sur la couche mince absorbante, conjointement avec la couche mince d'électrode de retour (2) métallique.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201480048042.0A CN105917473B (zh) | 2013-08-30 | 2014-08-28 | 用于通过电绝缘的绝缘沟槽在薄层太阳能模块中制造子太阳能模块的方法以及用于制造具有这种类型的绝缘沟槽的薄层太阳能模块的方法 |
EP14789777.1A EP3039725A1 (fr) | 2013-08-30 | 2014-08-28 | Procédé de production de sous-modules solaires par réalisation de tranchées d'isolation électriquement isolantes dans un module solaire en couches minces et procédé de production d'un module solaire en couches minces doté de telles tranchées d'isolation |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013109478.3A DE102013109478A1 (de) | 2013-08-30 | 2013-08-30 | Verfahren zur Herstellung von Sub-Solarmodulen durch elektrisch isolierende Isoliergräben in einem Dünnschichtsolarmodul und Verfahren zur Herstellung eines Dünnschichtsolarmoduls mit derartigen Isoliergräben |
DE102013109478.3 | 2013-08-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015027996A1 true WO2015027996A1 (fr) | 2015-03-05 |
Family
ID=51798947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2014/100308 WO2015027996A1 (fr) | 2013-08-30 | 2014-08-28 | Procédé de production de sous-modules solaires par réalisation de tranchées d'isolation électriquement isolantes dans un module solaire en couches minces et procédé de production d'un module solaire en couches minces doté de telles tranchées d'isolation |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3039725A1 (fr) |
CN (1) | CN105917473B (fr) |
DE (1) | DE102013109478A1 (fr) |
WO (1) | WO2015027996A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017121382A1 (fr) * | 2016-01-13 | 2017-07-20 | 北京铂阳顶荣光伏科技有限公司 | Chargeur solaire |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015115030A1 (de) * | 2015-09-08 | 2017-03-09 | Von Ardenne Gmbh | Verfahren zum Entfernen einer Schicht von einem Substrat und dessen Verwendung |
DE102019006095A1 (de) * | 2019-08-29 | 2021-03-04 | Azur Space Solar Power Gmbh | Vereinzelungsverfahren zur Vereinzelung einer mehrere Solarzellenstapel umfasssenden Halbleiterscheibe |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3129344A1 (de) | 1980-07-25 | 1982-09-16 | Eastman Kodak Co., 14650 Rochester, N.Y. | Anordnung von photozellen sowie verfahren zur herstellung derselben |
US4667058A (en) | 1985-07-01 | 1987-05-19 | Solarex Corporation | Method of fabricating electrically isolated photovoltaic modules arrayed on a substrate and product obtained thereby |
US20100062560A1 (en) * | 2008-09-10 | 2010-03-11 | Stion Corporation | Application specific solar cell and method for manufacture using thin film photovoltaic materials |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009056572B4 (de) * | 2009-12-01 | 2014-10-23 | Manz Automation Ag | Verfahren zum zumindest bereichsweisen Entfernen einer Schicht eines Schichtenstapels |
JP2011129631A (ja) * | 2009-12-16 | 2011-06-30 | Showa Shell Sekiyu Kk | Cis系薄膜太陽電池の製造方法 |
JP2012114398A (ja) * | 2010-11-05 | 2012-06-14 | Kataoka Seisakusho:Kk | 薄膜太陽電池の製造方法、レーザ加工機、薄膜太陽電池製造装置 |
DE102011017807A1 (de) * | 2011-04-29 | 2012-10-31 | Trumpf Laser- Und Systemtechnik Gmbh | Verfahren zum laserinduzierten Entfernen von Bereichen von Schichten eines Schichtenstapels |
-
2013
- 2013-08-30 DE DE102013109478.3A patent/DE102013109478A1/de not_active Withdrawn
-
2014
- 2014-08-28 EP EP14789777.1A patent/EP3039725A1/fr not_active Withdrawn
- 2014-08-28 WO PCT/DE2014/100308 patent/WO2015027996A1/fr active Application Filing
- 2014-08-28 CN CN201480048042.0A patent/CN105917473B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3129344A1 (de) | 1980-07-25 | 1982-09-16 | Eastman Kodak Co., 14650 Rochester, N.Y. | Anordnung von photozellen sowie verfahren zur herstellung derselben |
US4667058A (en) | 1985-07-01 | 1987-05-19 | Solarex Corporation | Method of fabricating electrically isolated photovoltaic modules arrayed on a substrate and product obtained thereby |
US20100062560A1 (en) * | 2008-09-10 | 2010-03-11 | Stion Corporation | Application specific solar cell and method for manufacture using thin film photovoltaic materials |
Non-Patent Citations (2)
Title |
---|
G. HEISE ET AL: "Monolithic interconnection of CIGSSe solar cells by picosecond laser structuring", PROC. SPIE 7585, LASER-BASED MICRO- AND NANOPACKAGING AND ASSEMBLY IV, 23 February 2010 (2010-02-23), pages 1 - 12, XP040549756, DOI: 10.1117/12.851907 * |
GERHARD HEISE ET AL: "Optimization of picosecond laser structuring for the monolithic serial interconnection of CIS solar cells", PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS, 23 January 2012 (2012-01-23), pages n/a - n/a, XP055109264, ISSN: 1062-7995, DOI: 10.1002/pip.1261 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017121382A1 (fr) * | 2016-01-13 | 2017-07-20 | 北京铂阳顶荣光伏科技有限公司 | Chargeur solaire |
Also Published As
Publication number | Publication date |
---|---|
CN105917473A (zh) | 2016-08-31 |
EP3039725A1 (fr) | 2016-07-06 |
CN105917473B (zh) | 2018-03-02 |
DE102013109478A1 (de) | 2015-03-05 |
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