WO2014147992A1 - 薄膜トランジスタアレイ - Google Patents

薄膜トランジスタアレイ Download PDF

Info

Publication number
WO2014147992A1
WO2014147992A1 PCT/JP2014/001336 JP2014001336W WO2014147992A1 WO 2014147992 A1 WO2014147992 A1 WO 2014147992A1 JP 2014001336 W JP2014001336 W JP 2014001336W WO 2014147992 A1 WO2014147992 A1 WO 2014147992A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layer
thin film
film transistor
transistor array
layer
Prior art date
Application number
PCT/JP2014/001336
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
妃奈 中條
広大 村田
Original Assignee
凸版印刷株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 凸版印刷株式会社 filed Critical 凸版印刷株式会社
Publication of WO2014147992A1 publication Critical patent/WO2014147992A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
PCT/JP2014/001336 2013-03-21 2014-03-10 薄膜トランジスタアレイ WO2014147992A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013058025A JP2014183265A (ja) 2013-03-21 2013-03-21 薄膜トランジスタアレイおよびその製造方法ならびに画像表示装置
JP2013-058025 2013-03-21

Publications (1)

Publication Number Publication Date
WO2014147992A1 true WO2014147992A1 (ja) 2014-09-25

Family

ID=51579692

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/001336 WO2014147992A1 (ja) 2013-03-21 2014-03-10 薄膜トランジスタアレイ

Country Status (3)

Country Link
JP (1) JP2014183265A (zh)
TW (1) TWI646668B (zh)
WO (1) WO2014147992A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108280475A (zh) * 2018-01-22 2018-07-13 京东方科技集团股份有限公司 一种制作显示设备的方法及装置、显示设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235861A (ja) * 2007-02-21 2008-10-02 Toppan Printing Co Ltd 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、および薄膜トランジスタアレイを用いたアクティブマトリクス型ディスプレイ
JP2011165947A (ja) * 2010-02-10 2011-08-25 Sony Corp 薄膜トランジスタおよび電子機器
WO2011122205A1 (ja) * 2010-03-30 2011-10-06 凸版印刷株式会社 薄膜トランジスタの製造方法並びに薄膜トランジスタ及び画像表示装置
JP2013021305A (ja) * 2011-06-17 2013-01-31 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5630036B2 (ja) * 2009-05-07 2014-11-26 セイコーエプソン株式会社 有機トランジスター、有機トランジスターの製造方法、電気光学装置および電子機器
JP5424724B2 (ja) * 2009-06-04 2014-02-26 富士フイルム株式会社 電界効果型トランジスタの製造方法、電界効果型トランジスタ、表示装置、及び電磁波検出器
KR101425064B1 (ko) * 2011-06-09 2014-08-01 엘지디스플레이 주식회사 산화물 박막 트랜지스터 및 그 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235861A (ja) * 2007-02-21 2008-10-02 Toppan Printing Co Ltd 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、および薄膜トランジスタアレイを用いたアクティブマトリクス型ディスプレイ
JP2011165947A (ja) * 2010-02-10 2011-08-25 Sony Corp 薄膜トランジスタおよび電子機器
WO2011122205A1 (ja) * 2010-03-30 2011-10-06 凸版印刷株式会社 薄膜トランジスタの製造方法並びに薄膜トランジスタ及び画像表示装置
JP2013021305A (ja) * 2011-06-17 2013-01-31 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108280475A (zh) * 2018-01-22 2018-07-13 京东方科技集团股份有限公司 一种制作显示设备的方法及装置、显示设备
CN108280475B (zh) * 2018-01-22 2020-06-09 京东方科技集团股份有限公司 一种制作显示设备的方法及装置、显示设备
US10930534B2 (en) 2018-01-22 2021-02-23 Boe Technology Group Co., Ltd. Method and device for manufacturing a display apparatus, and computer-readable storage medium

Also Published As

Publication number Publication date
TWI646668B (zh) 2019-01-01
JP2014183265A (ja) 2014-09-29
TW201444066A (zh) 2014-11-16

Similar Documents

Publication Publication Date Title
US8350255B2 (en) Thin film transistor and method for manufacturing thin film transistor
JP2009200315A (ja) 半導体装置の製造方法
US20070058101A1 (en) Liquid crystal display device
TWI646669B (zh) Thin film transistor array and manufacturing method thereof
TWI677104B (zh) 薄膜電晶體、薄膜電晶體之製造方法及使用薄膜電晶體之影像顯示裝置
US8785264B2 (en) Organic TFT array substrate and manufacture method thereof
JP2007335560A (ja) 有機薄膜トランジスタ、表示装置、有機薄膜トランジスタの製造方法
US10629654B2 (en) Thin film transistor array formed substrate, image display device substrate and manufacturing method of thin film transistor array formed substrate
WO2014147992A1 (ja) 薄膜トランジスタアレイ
JP2016163029A (ja) 薄膜トランジスタ、薄膜トランジスタアレイの製造方法及び画素表示装置
TWI610423B (zh) 薄膜電晶體陣列及其製造方法
JP5685932B2 (ja) 薄膜トランジスタ
JP2020088117A (ja) 薄膜トランジスタアレイ基板、画像表示装置用基板、画像表示装置、およびこれらの製造方法
JP6217162B2 (ja) 薄膜トランジスタ及びその製造方法並びに画像表示装置
WO2014049970A1 (ja) 薄膜トランジスタアレイおよび画像表示装置
JP2009302169A (ja) 薄膜トランジスタ、薄膜トランジスタの製造方法、薄膜トランジスタアレイ及び画像表示装置
JP6390122B2 (ja) 薄膜トランジスタ、薄膜トランジスタアレイの製造方法及び画像表示装置
JP6244812B2 (ja) 薄膜トランジスタおよびその製造方法ならびに画像表示装置
JP2015195280A (ja) 薄膜トランジスタアレイ、その製造方法および画像表示装置
JP6428126B2 (ja) 薄膜トランジスタ、薄膜トランジスタアレイの製造方法、及び画像表示装置
WO2014155998A1 (ja) 薄膜トランジスタアレイおよび画像表示装置
JP6627213B2 (ja) ボトムゲート・ボトムコンタクト型の薄膜トランジスタ、ボトムゲート・ボトムコンタクト型の薄膜トランジスタの製造方法および画像表示装置
JP6627437B2 (ja) 薄膜トランジスタアレイ基板の製造方法
JP6197306B2 (ja) 薄膜トランジスタの製造方法
JP2017059702A (ja) 薄膜トランジスタ、薄膜トランジスタアレイの製造方法及び画像表示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14771103

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14771103

Country of ref document: EP

Kind code of ref document: A1