WO2014147969A1 - Ensemble gabarit et procédé permettant de fabriquer un ensemble gabarit - Google Patents

Ensemble gabarit et procédé permettant de fabriquer un ensemble gabarit Download PDF

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Publication number
WO2014147969A1
WO2014147969A1 PCT/JP2014/000997 JP2014000997W WO2014147969A1 WO 2014147969 A1 WO2014147969 A1 WO 2014147969A1 JP 2014000997 W JP2014000997 W JP 2014000997W WO 2014147969 A1 WO2014147969 A1 WO 2014147969A1
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Prior art keywords
template
workpiece
backing pad
template assembly
depth
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PCT/JP2014/000997
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English (en)
Japanese (ja)
Inventor
三千登 佐藤
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信越半導体株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Priority to SG11201507321WA priority Critical patent/SG11201507321WA/en
Priority to DE112014001031.6T priority patent/DE112014001031T5/de
Priority to KR1020157025269A priority patent/KR102058923B1/ko
Priority to US14/771,967 priority patent/US20160008947A1/en
Priority to CN201480016816.1A priority patent/CN105102189B/zh
Publication of WO2014147969A1 publication Critical patent/WO2014147969A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B31/00—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor
    • B24B31/12—Accessories; Protective equipment or safety devices; Installations for exhaustion of dust or for sound absorption specially adapted for machines covered by group B24B31/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces

Definitions

  • the present invention relates to a template assembly for holding a workpiece when polishing the surface of a workpiece such as a semiconductor wafer such as a silicon wafer, and a manufacturing method thereof.
  • a general single-side polishing apparatus 200 as shown in FIG. 8 includes a surface plate 203 to which a polishing cloth 202 is attached, an abrasive supply mechanism 204, a polishing head 201, and the like.
  • the polishing apparatus 200 holds the workpiece W with the polishing head 201, supplies the polishing agent 205 from the polishing agent supply mechanism 204 onto the polishing cloth 202, and rotates the surface plate 203 and the polishing head 201 to rotate the surface of the workpiece W. Polishing is performed by bringing the surface into sliding contact with the polishing cloth 202.
  • a polishing head using a retainer ring or a polishing head using a template assembly is used as a method for holding a workpiece.
  • the polishing head using the retainer ring has a function of preventing the outer peripheral sag of the workpiece by the retainer ring pressing the polishing cloth around the workpiece and preventing the workpiece from being compressed and deformed by the workpiece itself.
  • the polishing head structure is complicated, the cost is increased.
  • FIG. 9 An example of a polishing head using a conventional template assembly is shown in FIG.
  • the template assembly includes a backing pad 102 and an annular template portion 103 bonded to the outer peripheral portion of the lower surface thereof, and a recess is formed between the inner surface of the template portion and the lower surface of the backing pad 102. .
  • the polishing head 101 is configured by adhering this template assembly to the polishing head main body 104 with a double-sided tape 105.
  • a glass epoxy resin or the like is used as the material of the template portion 103.
  • the outer peripheral shape of the wafer W is controlled by the difference between the recess depth of the template assembly and the thickness of the wafer W. That is, by appropriately selecting the thickness of the template portion 103, the pressure on the outer peripheral portion of the work during polishing can be adjusted, so that the outer peripheral sagging can be relatively easily performed without complicating the structure of the polishing head. Can be suppressed.
  • a template assembly using a PET substrate as shown in FIG. 10 is also known (see Patent Document 2).
  • the template assembly 110 the template portion 103 that has been ground or lapped is directly bonded to the PET base material 106, and a backing pad 102 with reduced thickness variation is attached to the inside thereof by buffing. .
  • the above-described method of buffing the backing pad and grinding / polishing the template portion has an effect of reducing the thickness variation between the backing pad and the template portion, but the template portion and the backing pad that is an elastic body
  • the depth accuracy of the concave portion of the template assembly has a variation of ⁇ 20 ⁇ m with respect to the target value, and the in-plane variation of the depth is about 15 ⁇ m.
  • the thickness variation with respect to the target thickness after grinding and polishing the template portion can be improved to ⁇ 3 ⁇ m, and the in-plane thickness variation can be improved to 3 ⁇ m or less.
  • the depth accuracy of the concave portion of the template assembly after the template portion is bonded to the backing pad has a variation of ⁇ 10 ⁇ m with respect to the target value, and the in-plane variation of the depth is also deteriorated to about 10 ⁇ m.
  • the glass epoxy resin used as the template part is hard, it is relatively easy to improve the bonding accuracy. As a result, the accuracy of the template assembly can be improved.
  • a disc-shaped backing pad is affixed to the inner surface of the template portion, slurry enters the gap formed between the template portion and the backing pad during polishing, and this becomes a source of dust generation, such as minute scratches and defects on the workpiece, There is a problem that the work quality after polishing is adversely affected.
  • the template portion when the thickness of the template portion is increased, the template portion is not submerged during polishing as compared with the template assembly in which the template portion is bonded to the backing pad as shown in FIG.
  • the gap between the cloths becomes smaller. Therefore, the amount of slurry supplied to the workpiece surface is insufficient, which may adversely affect the workpiece quality, and there is a problem that the template portion cannot be made too thick.
  • Patent Document 3 a method of forming an annular groove in the backing pad along the inner surface of the template portion in order to suppress the outer peripheral sag of the workpiece is known (see Patent Document 3). Since the slurry enters and becomes a source of dust generation, surface defects of the workpiece cannot be improved.
  • the present invention has been made in view of the above-described problems, and improves the flatness of the workpiece after polishing by reducing the in-plane variation of the depth of the recess while suppressing the occurrence of scratches and defects on the workpiece. It is an object to provide a template assembly that can be used.
  • a template assembly for holding a workpiece when the workpiece is polished, which is bonded to a PET substrate and an outer peripheral portion of the lower surface of the PET substrate.
  • An annular template portion and a disk-shaped backing pad bonded to the center of the lower surface of the PET base material, and the inner surface of the template portion and the lower surface of the backing pad accommodate the workpiece during polishing.
  • the template assembly is characterized in that a concave portion to be held is formed, an annular notch is formed in the upper part of the inner surface of the template portion, and a peripheral edge of the backing pad is engaged with the notch. Is done.
  • the thickness of the notch is equal to or less than a target thickness of the backing pad. If this is the case, there is no gap between the template portion and the backing pad, and if the thickness of the notch is smaller than the target thickness of the backing pad, the polishing pressure on the outer periphery of the workpiece can be reduced. In addition, since the amount of polishing of the outer peripheral portion of the work can be reduced, the outer peripheral sagging can be suppressed.
  • the material of the template part is preferably a glass epoxy resin. If it is such, it will become the thing excellent in the mechanical characteristic, and can prevent the metal contamination and a crack to a workpiece
  • the in-plane variation of the depth of the recess is 10 ⁇ m or less. If it is such, the flatness of the workpiece
  • a method of manufacturing the template assembly comprising: preparing an annular template portion having an annular notch formed on the inner surface; and a disc-shaped backing pad on a PET base. Adhering to the center part of the material, and adhering the template part to the outer peripheral part of the lower surface of the PET base material by engaging the peripheral part of the backing pad with the notch part of the template part.
  • a method for manufacturing a template assembly is provided.
  • the in-plane variation in the thickness of the template portion and the backing pad is reduced, the flatness of the workpiece after polishing can be improved, and the occurrence of scratches and defects on the workpiece can be suppressed. Can be manufactured.
  • a substrate for the template portion is prepared, and after the prepared substrate is cut out in an annular shape, the upper portion of the inner surface of the annular substrate is ground to form the cutout portion. be able to. If it does in this way, the annular template part which has a notch part can be prepared easily.
  • the template part may be lapped and / or polished so that the in-plane variation in the thickness of the template part is 10 ⁇ m or less. preferable. In this way, the in-plane variation in the depth of the recess formed by the inner surface of the template portion and the lower surface of the backing pad can be reliably reduced.
  • the template assembly of the present invention includes a PET substrate, an annular template portion bonded to the outer peripheral portion of the lower surface of the PET substrate, and a disk-shaped backing pad bonded to the central portion of the lower surface of the PET substrate. And an annular notch is formed in the upper part of the inner surface of the template part, and the peripheral part of the backing pad is engaged with the notch, so that no dust is generated during polishing, and the workpiece is scratched. And the occurrence of defects can be suppressed, and the in-plane variation of the thickness of the template portion and the backing pad, and hence the in-plane variation of the depth of the recess can be reduced, and the flatness of the workpiece after polishing can be improved.
  • FIG. 3 is a schematic view of an example of a template assembly of the present invention. It is the figure which expanded the periphery of the notch part which has the same thickness as the target thickness of the backing pad in the template assembly of this invention. It is the figure which expanded the periphery of the notch part which has thickness smaller than the target thickness of the backing pad in the template assembly of this invention. It is a figure which shows the relationship of the roll-off with respect to the deviation
  • Example 6 is a radar chart showing fluctuations in positions of eight points in a roll-off plane in Example 1-2 and Comparative Example 1-2. It is a figure which shows the number of wafer defects in Example 1-2 and Comparative Examples 1 and 3. It is the schematic which shows an example of a general grinding
  • a template assembly 1 of the present invention includes a PET (polyethylene terephthalate) substrate 2, an annular template portion 3, and a disk-shaped backing pad 4.
  • the thickness and shape of the PET substrate 2 are not particularly limited, and for example, the shape can be a disk shape.
  • the backing pad 4 includes water and affixes the work W to the lower surface to hold the work W.
  • the backing pad 4 can be made of foamed polyurethane, for example. By providing such a backing pad 4 and containing water, the workpiece W can be reliably held by the surface tension of the water contained in the backing pad 4.
  • the template part 3 is bonded to the outer peripheral part of the lower surface of the PET base material 2.
  • the backing pad 4 is bonded to the central portion of the lower surface of the PET substrate 2.
  • a recess 6 is formed by the inner surface of the template portion 3 and the lower surface of the backing pad 4.
  • the material of the template portion 3 does not contaminate the workpiece W, and is not scratched or indented. Therefore, the template portion 3 is softer than the workpiece W, and does not easily wear even if it comes into sliding contact with the polishing cloth during polishing.
  • a high material is preferable. From such a viewpoint, for example, the material of the template part 3 can be a glass epoxy resin.
  • an annular notch 5 is formed in the upper part of the inner surface of the template 3.
  • the backing pad 4 is bonded to the central portion of the lower surface of the PET base material 2 so that the peripheral edge of the backing pad 4 is engaged with the notch 5. If it is such, the clearance gap between the template part 3 and the backing pad 4 can be eliminated, employ
  • the thickness d of the notch 5 is preferably equal to or less than the target thickness of the backing pad 4 so that a gap with the backing pad 4 is not formed.
  • the thickness d of the notch portion 5 may be made smaller than the target thickness of the backing pad 4 as shown in FIG. By doing so, the peripheral portion of the backing pad 4 sandwiched between the template portions 3 is compressed in an annular shape, so that the polishing pressure on the outer peripheral portion of the work is reduced, the amount of polishing on the outer peripheral portion of the work is lowered, and the outer peripheral portion of the work Can be suppressed.
  • the polishing pressure on the outer peripheral portion of the workpiece can be adjusted without changing the thickness of the template portion 3 by adjusting the thickness of the notch portion 5.
  • the gap between the polishing cloth and the polishing cloth is reduced, so that the supply amount of the slurry can be suppressed, and the occurrence of surface defects on the workpiece can be suppressed.
  • this structure can be used in combination with a method of cutting the backing pad 4 in a ring shape.
  • an annular template portion 3 having an annular notch portion 5 formed on the inner surface is prepared.
  • This step can be performed, for example, as follows.
  • a substrate such as a glass epoxy resin substrate for the template portion is prepared.
  • the substrate is lapped and / or polished so that the thickness of the substrate becomes a target value.
  • the in-plane variation of the thickness of the template portion 3 is 10 ⁇ m or less. If it does in this way, when grind
  • lapping for example, alumina-based or SiC-based abrasive particles can be used as the abrasive particles.
  • polishing for example, an alkaline solution containing colloidal silica can be used.
  • the substrate is washed in order to remove abrasive grains and alkali solution adhered by lapping and polishing.
  • the notch portion 5 is formed by grinding the upper part of the inner surface of the annular template portion 3. At this time, as described above, the thickness of the notch 5 is set to a predetermined thickness equal to or less than the target thickness of the backing pad 4.
  • a disk-shaped backing pad 4 is bonded to the center of the PET base material 2.
  • the diameter of the backing pad 4 is set so as to be engaged with the annular notch 5 formed as described above.
  • the template portion 3 is bonded to the outer peripheral portion of the lower surface of the PET base material 2 so that the peripheral edge portion of the backing pad 4 is engaged with the notch portion 5 of the template portion 3.
  • the above-described template assembly of the present invention can be manufactured by the above-described method for manufacturing a template assembly of the present invention.
  • Example 1 A template assembly of the present invention as shown in FIG. 1 was manufactured according to the manufacturing method of the present invention, and the accuracy of the depth of the recess was evaluated. The accuracy of the depth of the concave portion was evaluated for deviation from the target depth and in-plane variation. After lapping the glass epoxy resin substrate to near the thickness, the substrate was polished with a slurry containing about 1 ⁇ m of cerium oxide powder and processed into an annular shape with a predetermined size. After that, a notch was formed by circularly grinding with a lathe from the inner circumference to a position of 5 mm with the same thickness as the backing pad.
  • the template part thus produced was adhered to a PET base material having a backing pad adhered to the center part to produce a template assembly.
  • the average value (Ave) of the deviation from the target depth was ⁇ 0.51 ⁇ m
  • the maximum value was 4.8 ⁇ m on the plus side (Max)
  • the side (Min) was 6.5 ⁇ m.
  • the in-plane variation in depth was 5.3 ⁇ m as the average value (Ave) of the range of 8 points and 7 ⁇ m as the maximum value (Max) of the range. From this result, it was found that the depth accuracy of the recess was greatly improved as compared with the results of Comparative Examples 1 and 2 described later.
  • a silicon wafer having a diameter of 300 mm was polished using a polishing apparatus as shown in FIG. 8 equipped with the template assembly manufactured in Example 1, and the flatness and wafer surface defects were evaluated.
  • roll-off measurement was performed using an edge roll-off measuring device LER-310M manufactured by Kobelco Kaken.
  • the roll-off calculation reference plane was 3 to 6 mm from the outer periphery, and roll-offs of 0.5 mm, 0.7 mm, 1.0 mm, and 2.0 mm from the outer periphery were measured for each of four wafers.
  • Table 3 shows the average roll-off value at each point.
  • FIG. 4 shows the relationship between the deviation from the target depth of the recesses in Table 1 and the roll-off in Table 3. As shown in FIG. 4, the deviation of the depth of the concave portion from the target value is shifted to the minus side (the depth of the concave portion becomes shallower) from the target value.
  • the effect of reducing the polishing pressure at the outer peripheral portion is lowered, and in particular, the change in roll-off at a position of 0.5 mm from the outer periphery, which is easily affected by the depth of the recess, is significant.
  • FIG. 5 shows the average value (Ave), maximum value (Max), and minimum value (Min) of roll-off of each wafer at a position 0.5 mm from the outer periphery.
  • FIG. 6 is a radar chart showing how the positions of the eight points in the roll-off plane at each measurement position are fluctuating.
  • Example 1 since the recess depth substantially equal to the target depth is obtained, as shown in FIGS. 5 and 6, the roll-off is improved as compared with Comparative Example 1-2 described later, and the in-plane variation is large. Improved. Further, as shown in FIG. 6, the radar chart is substantially concentric, and it was found that the in-plane fluctuation of the roll-off is suppressed.
  • FIG. 7 shows the result of wafer surface defects. As shown in FIG. 7, it was found that the wafer surface defects could be suppressed as compared with the results of Comparative Example 3 described later. The surface defects were evaluated using Magics 350 manufactured by Lasertec Corporation, and the total number of defects in Comparative Example 1 was evaluated as 1.0.
  • Example 2 The template assembly of the present invention was manufactured in the same manner as in Example 1 except that the thickness of the template part was 10 ⁇ m thinner than that of Example 1 and the thickness of the notch part was 20 ⁇ m thinner than the thickness of the backing pad. evaluated.
  • the template part 10 micrometers thinner than Example 1 is used, since the peripheral part of a backing pad is compressed by the template part, the recessed part in the state which applied the load of 100 g / cm ⁇ 2 > to the workpiece
  • Example 2 using a polishing apparatus as shown in FIG. 8 equipped with the template assembly manufactured in Example 2, a silicon wafer having a diameter of 300 mm was polished, and the flatness and wafer surface defects were evaluated in the same manner as in Example 1.
  • the template portion having a thickness different from that in Example 1 is used.
  • the roll-off of the polished wafer has the same result. .
  • FIG. 7 shows the result of wafer surface defects. As shown in FIG. 7, it was found that the wafer surface defects could be suppressed as compared with the results of Comparative Example 3 described later.
  • Example 1 and Example 2 the roll-off of the polished wafer was at the same level, and the in-plane variation of the roll-off was also at the same level. That is, even if the thickness of the template portion is reduced as in the second embodiment, a concave portion having a target depth can be formed by adjusting the thickness of the notch portion. For example, due to the influence of the compressibility of the polishing cloth used, etc. Even when a deep concave portion is selected so that the amount of slurry supplied to the wafer surface during polishing is reduced, the thickness of the template portion can be made thinner than conventionally required. Therefore, it is possible to improve roll-off and wafer surface defects while suppressing a decrease in the amount of slurry supplied to the workpiece surface during polishing.
  • Example 1 A conventional commercially available template assembly in which the template portion was bonded to the outer peripheral portion of the lower surface of the backing pad as shown in FIG. 9 was used, and evaluation was performed in the same manner as in Example 1 without lapping or polishing the template portion.
  • Table 1 the average deviation from the target depth was ⁇ 4.46 ⁇ m, the maximum value was 11.0 ⁇ m on the plus side, and 16.9 ⁇ m on the minus side. It was.
  • Table 2 the in-plane variation in depth was 15.63 ⁇ m as the average value of the range of 8 points, and 26 ⁇ m at the maximum value of the range. From this result, it was found that the depth accuracy of the recess was greatly deteriorated compared to the results of Examples 1 and 2 above.
  • Comparative Example 1 As shown in Tables 1 and 2, since the deviation of the depth of the recess from the target value is larger than in Example 1-2, the roll-off is large and the in-plane variation is large. From the radar chart of FIG. 6, it was found that there is a wafer with a roll-off bias in the plane.
  • Fig. 7 shows the results of wafer surface defects. As shown in FIG. 7, the template assembly used in Comparative Example 1 has no gap between the template part and the backing pad as shown in FIG. It was suppressed.
  • Comparative Example 2 A template assembly similar to that in Comparative Example 1 was used, except that the template portion was lapped, and evaluation was performed in the same manner.
  • the depth of the concave portion of the template assembly was measured, as shown in Table 1, the average deviation from the target depth was ⁇ 3.04 ⁇ m, the maximum value was 8.9 ⁇ m on the plus side, and 10.9 ⁇ m on the minus side. It was.
  • the in-plane variation in depth was 9.77 ⁇ m as the average value of the range of 8 points, and 16 ⁇ m at the maximum value of the range.
  • Example 2 a silicon wafer having a diameter of 300 mm was polished, and the flatness was evaluated in the same manner as in Example 1.
  • Comparative Example 2 as shown in Tables 1 and 2, since the deviation from the target value of the depth of the recess is smaller than in Comparative Example 1, roll-off and in-plane variation are improved compared to Comparative Example 1. However, it was significantly worse than Example 1-2. From the radar chart of FIG. 6, it was found that a roll-off bias was observed in the same plane as in Comparative Example 1, and the roll-off fluctuation on the outer periphery could not be suppressed.
  • Example 3 A silicon wafer having a diameter of 300 mm is polished using a polishing apparatus as shown in FIG. 8 provided with a conventional template assembly having no notch in the template part as shown in FIG. In-plane variation in depth and wafer surface defects were evaluated. As a result, although the in-plane variation of the recess depth equivalent to that of Example 1-2 was obtained, the wafer surface defects were worse than those of Example 1-2 and Comparative Example 1. This surface defect is considered to be caused by dust generation during polishing due to slurry entering the gap between the template portion and the backing pad.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention se rapporte à un ensemble gabarit destiné à supporter une pièce à travailler lorsque la pièce à travailler est polie, l'ensemble gabarit étant caractérisé en ce qu'il comprend un substrat en poly(téréphtalate d'éthylène) (PET), une partie gabarit annulaire liée à la partie périphérique externe de la surface inférieure du substrat en PET, et une plaque de presse en forme de disque liée à la partie centrale de la surface inférieure du substrat en PET ; la surface interne de la partie gabarit et la surface inférieure de la plaque de presse formant un évidement destiné à recevoir et à supporter la pièce à travailler pendant le polissage, une partie découpée annulaire étant formée sur la partie supérieure de la surface interne de la partie gabarit, et la partie bord périphérique de la plaque de presse venant en contact avec la partie découpée. Il est ainsi possible de réduire la variation dans le plan de la profondeur de l'évidement tout en réduisant à un minimum l'apparition de défauts et de rayures sur la pièce à travailler et, de ce fait, d'améliorer la planéité de la pièce à travailler polie.
PCT/JP2014/000997 2013-03-22 2014-02-26 Ensemble gabarit et procédé permettant de fabriquer un ensemble gabarit WO2014147969A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SG11201507321WA SG11201507321WA (en) 2013-03-22 2014-02-26 Template assembly and method of producing template assembly
DE112014001031.6T DE112014001031T5 (de) 2013-03-22 2014-02-26 Halterungsbaugruppe und Verfahren zur Herstellung derselben
KR1020157025269A KR102058923B1 (ko) 2013-03-22 2014-02-26 템플레이트 어셈블리 및 템플레이트 어셈블리의 제조방법
US14/771,967 US20160008947A1 (en) 2013-03-22 2014-02-26 Template assembly and method of producing template assembly
CN201480016816.1A CN105102189B (zh) 2013-03-22 2014-02-26 模板组件及模板组件的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-060418 2013-03-22
JP2013060418A JP5821883B2 (ja) 2013-03-22 2013-03-22 テンプレートアセンブリ及びテンプレートアセンブリの製造方法

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WO2014147969A1 true WO2014147969A1 (fr) 2014-09-25

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US (1) US20160008947A1 (fr)
JP (1) JP5821883B2 (fr)
KR (1) KR102058923B1 (fr)
CN (1) CN105102189B (fr)
DE (1) DE112014001031T5 (fr)
SG (1) SG11201507321WA (fr)
TW (1) TWI577501B (fr)
WO (1) WO2014147969A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017072462A (ja) * 2015-10-07 2017-04-13 信越半導体株式会社 テンプレートの測定方法及び評価方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6394569B2 (ja) * 2015-11-06 2018-09-26 信越半導体株式会社 ウェーハの研磨方法及び研磨装置
JP6508003B2 (ja) * 2015-11-06 2019-05-08 信越半導体株式会社 テンプレートアセンブリの製造方法及びこのテンプレートアセンブリを用いた研磨方法並びにテンプレートアセンブリ
US20170252893A1 (en) * 2016-03-03 2017-09-07 P.R. Hoffman Machine Products Inc. Polishing machine work piece holder
US10556317B2 (en) * 2016-03-03 2020-02-11 P.R. Hoffman Machine Products Inc. Polishing machine wafer holder
JP6508123B2 (ja) * 2016-05-13 2019-05-08 信越半導体株式会社 テンプレートアセンブリの選別方法及びワークの研磨方法並びにテンプレートアセンブリ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5645474A (en) * 1995-11-30 1997-07-08 Rodel Nitta Company Workpiece retaining device and method for producing the same
JPH11333711A (ja) * 1998-05-21 1999-12-07 Nikon Corp 研磨ヘッド及びそれを用いた研磨装置
JP2006502016A (ja) * 2002-10-02 2006-01-19 エンジンガー クンストストッフテクノロジー ゲゼルシャフト ビュルガリッヒェン レヒツ 化学機械研磨装置において半導体ウェハを保持する保持リング
JP2006068882A (ja) * 2004-09-06 2006-03-16 Nitta Haas Inc 被加工物保持部材
JP2008093810A (ja) * 2006-10-16 2008-04-24 Shin Etsu Handotai Co Ltd リテーナリング及び研磨ヘッド並びに研磨装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2849533B2 (ja) 1993-08-18 1999-01-20 長野電子工業株式会社 ウェーハの研磨方法
JP3042293B2 (ja) * 1994-02-18 2000-05-15 信越半導体株式会社 ウエーハのポリッシング装置
US6146259A (en) * 1996-11-08 2000-11-14 Applied Materials, Inc. Carrier head with local pressure control for a chemical mechanical polishing apparatus
US6251215B1 (en) * 1998-06-03 2001-06-26 Applied Materials, Inc. Carrier head with a multilayer retaining ring for chemical mechanical polishing
JP2000233363A (ja) * 1999-02-16 2000-08-29 Ebara Corp ポリッシング装置及び方法
US6527624B1 (en) * 1999-03-26 2003-03-04 Applied Materials, Inc. Carrier head for providing a polishing slurry
US7255637B2 (en) * 2000-09-08 2007-08-14 Applied Materials, Inc. Carrier head vibration damping
US6676497B1 (en) * 2000-09-08 2004-01-13 Applied Materials Inc. Vibration damping in a chemical mechanical polishing system
JP3969069B2 (ja) * 2000-12-04 2007-08-29 株式会社東京精密 ウェーハ研磨装置
TWI261009B (en) * 2001-05-02 2006-09-01 Hitoshi Suwabe Polishing machine
US6835125B1 (en) * 2001-12-27 2004-12-28 Applied Materials Inc. Retainer with a wear surface for chemical mechanical polishing
US7033252B2 (en) * 2004-03-05 2006-04-25 Strasbaugh Wafer carrier with pressurized membrane and retaining ring actuator
US7063604B2 (en) * 2004-03-05 2006-06-20 Strasbaugh Independent edge control for CMP carriers
JP2008093811A (ja) 2006-10-16 2008-04-24 Shin Etsu Handotai Co Ltd 研磨ヘッド及び研磨装置
JP5169321B2 (ja) 2008-03-04 2013-03-27 信越半導体株式会社 ワークの研磨方法
JP5143151B2 (ja) * 2010-02-01 2013-02-13 富士紡ホールディングス株式会社 研磨加工方法
CN101934495A (zh) * 2010-07-30 2011-01-05 清华大学 嵌入式化学机械抛光用的保持环
JP2012130993A (ja) * 2010-12-22 2012-07-12 Shin Etsu Handotai Co Ltd 研磨方法、研磨装置及び研磨布
WO2012142305A2 (fr) * 2011-04-13 2012-10-18 Applied Materials, Inc. Tête de support dotée de cales
JP5789869B2 (ja) * 2011-07-28 2015-10-07 東邦エンジニアリング株式会社 研磨パッド用補助板および研磨パッド用補助板を備えた研磨装置
KR101597870B1 (ko) * 2012-04-02 2016-02-25 강준모 화학 기계적 연마 장치 용 캐리어 헤드
US9368371B2 (en) * 2014-04-22 2016-06-14 Applied Materials, Inc. Retaining ring having inner surfaces with facets
US10252397B2 (en) * 2014-10-30 2019-04-09 Applied Materials, Inc. Methods and apparatus for profile and surface preparation of retaining rings utilized in chemical mechanical polishing processes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5645474A (en) * 1995-11-30 1997-07-08 Rodel Nitta Company Workpiece retaining device and method for producing the same
JPH11333711A (ja) * 1998-05-21 1999-12-07 Nikon Corp 研磨ヘッド及びそれを用いた研磨装置
JP2006502016A (ja) * 2002-10-02 2006-01-19 エンジンガー クンストストッフテクノロジー ゲゼルシャフト ビュルガリッヒェン レヒツ 化学機械研磨装置において半導体ウェハを保持する保持リング
JP2006068882A (ja) * 2004-09-06 2006-03-16 Nitta Haas Inc 被加工物保持部材
JP2008093810A (ja) * 2006-10-16 2008-04-24 Shin Etsu Handotai Co Ltd リテーナリング及び研磨ヘッド並びに研磨装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017072462A (ja) * 2015-10-07 2017-04-13 信越半導体株式会社 テンプレートの測定方法及び評価方法
WO2017061077A1 (fr) * 2015-10-07 2017-04-13 信越半導体株式会社 Procédé de mesure et procédé d'évaluation de modèle
US10661410B2 (en) 2015-10-07 2020-05-26 Shin-Etsu Handotai Co., Ltd. Method for measuring template and method for evaluating same

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US20160008947A1 (en) 2016-01-14
KR102058923B1 (ko) 2019-12-24
TW201505761A (zh) 2015-02-16
JP2014184511A (ja) 2014-10-02
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TWI577501B (zh) 2017-04-11
KR20150133714A (ko) 2015-11-30

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