WO2014134889A1 - 可聚合低聚物和包含其的光刻胶组合物 - Google Patents
可聚合低聚物和包含其的光刻胶组合物 Download PDFInfo
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- WO2014134889A1 WO2014134889A1 PCT/CN2013/078199 CN2013078199W WO2014134889A1 WO 2014134889 A1 WO2014134889 A1 WO 2014134889A1 CN 2013078199 W CN2013078199 W CN 2013078199W WO 2014134889 A1 WO2014134889 A1 WO 2014134889A1
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- Prior art keywords
- polymerizable
- oligomer
- polymerizable double
- double bond
- monomer
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1805—C5-(meth)acrylate, e.g. pentyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/20—Esters of polyhydric alcohols or phenols, e.g. 2-hydroxyethyl (meth)acrylate or glycerol mono-(meth)acrylate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/14—Esterification
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/18—Introducing halogen atoms or halogen-containing groups
- C08F8/24—Haloalkylation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/04—Acids; Metal salts or ammonium salts thereof
- C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2800/00—Copolymer characterised by the proportions of the comonomers expressed
- C08F2800/20—Copolymer characterised by the proportions of the comonomers expressed as weight or mass percentages
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2810/00—Chemical modification of a polymer
- C08F2810/30—Chemical modification of a polymer leading to the formation or introduction of aliphatic or alicyclic unsaturated groups
Definitions
- Embodiments of the present invention provide a polymerizable oligomer containing a polymerizable double bond and a hydrophilic group.
- the monomer or compound for synthesizing the polymerizable oligomer may include: an organic ester monomer containing a polymerizable double bond, an organic acid monomer containing a polymerizable double bond, and an organic acid chloride containing a polymerizable double bond.
- One or more kinds of monomers optionally, a compound containing a polymerizable double bond and a hydroxyl group; and a compound containing a hydrophilic group.
- the oligomer containing a polymerizable double bond is reacted with a compound containing a hydrophilic group to form the polymerizable oligomer, and the polymerizable oligomer contains a polymerizable double 4t group and a hydrophilic group.
- synthesis of oligomers containing polymerizable double bonds includes:
- the oligomer (a) is reacted with a compound containing a polymerizable double bond and a hydroxyl group to form an oligomer containing a polymerizable double bond.
- the oligomer (a) formed by polymerization of one or more of the above monomers has an ester group, a carboxyl group or an acid chloride group in its side chain.
- the compound containing a polymerizable double bond and a hydroxyl group can be reacted with an ester group, a carboxyl group or an acid chloride group on the side chain of the oligomer (a) through a hydroxyl group thereon to introduce a polymerizable double bond on the oligomer (a).
- an oligomer (b) containing a polymerizable double bond is obtained.
- the polymerizable oligomer described in the present disclosure may be prepared from an oligomer (c) containing a polymerizable double bond and a compound containing a hydrophilic group;
- the hydrophilic group and the hydrophilic group-containing compound in the polymerizable oligomer formed by the present scheme can be referred to the introduction in Scheme 1 and further details provided below.
- the polymerizable oligomer in the photoresist composition can be repolymerized by a polymerizable double bond under illumination so that the exposed portion of the photoresist composition is not washed away by the alkali solution during the development stage, and the unexposed portion is The lye is washed away to develop the desired pattern. Since the hydrophilic group is provided on the side chain of the polymerizable oligomer, the hydrophilicity of the polymerizable oligomer can be improved.
- the hydroxyl group-containing compound may be pentaerythritol, hexanediol or a combination thereof.
- embodiments of the present invention also provide a photoresist composition comprising any of the above polymerizable oligomers provided by embodiments of the present invention.
- Fig. 1 shows a coating process and a schematic diagram of a photoresist composition.
- the photoresist composition is applied over the glass substrate 102, and masked with a mask 103 for exposure.
- the polymerizable oligomer in the photoresist 101 can participate in the polymerization reaction in the presence of light and an initiator, that is, the polymerizable double bond in the oligomer can participate in the reaction, so that in the developing stage, the photolithography
- the exposed portion of the glue 101 is not washed away by the lye to form the pixel 104.
- the embodiment of the invention further provides a preparation method of the polymerizable oligomer, as shown in FIG. 2, comprising:
- the oligomer containing a polymerizable double bond can be synthesized in various ways. In the examples of the present invention, the following two schemes are listed to synthesize the oligomer containing a polymerizable double bond.
- step 201 may include steps (1) and (2).
- an oligomer by polymerizing one or more of an organic ester monomer containing a polymerizable double bond, an organic acid monomer containing a polymerizable double bond, and a monomer having a polymerizable double bond organic acid chloride (a); in the step (1), an organic ester monomer containing a polymerizable double bond, an organic acid monomer containing a polymerizable double bond, and a monomer containing a polymerizable double bond organic acid chloride Or several, and an initiator (or a polymerization initiator) is added to the reaction vessel by a one-time addition method or a continuous addition method, and reacted at 50-80 ° C for 4-7 hours. Then add a polymerization inhibitor to the reaction vessel and cool down to At 40-60 ° C, an oligomer (a ) is obtained.
- an initiator or a polymerization initiator
- step 202 is performed.
- Example 2 Using the polymerizable oligomer prepared in this example, the same composition and content as in Example 1 were used to prepare the photoresist composition of the present example, except that the photoinitiator was a photoinitiator. 369 (made by BASF).
- the polymerizable oligomer of this comparative example was prepared by the same preparation method as in Example 1, except that the parts by weight of the monomers shown in Table 1 were used.
- Example 2 Using the polymerizable oligomer obtained in this example, the same composition and content as in Example 1 were used to prepare the photoresist composition of this example.
- Photoresist composition and preparation method thereof Using the polymerizable oligomer obtained in this example, the same composition and content as in Example 1 were used to prepare the photoresist composition of this example.
- the negative photoresist resist compositions of Examples 1-4 and Comparative Examples 1-2 were respectively coated on a glass substrate, and subjected to pre-baking, exposure, development, and post-baking processes, and the respective examples and comparative examples were observed.
- Developing state The pre-baking temperature is 90 ° C and the time is 3 minutes; the exposure amount during the exposure process is 150 mJ/cm 2 ; the developing process uses a 2% sodium hydroxide (NaOH) solution; the post-bake film thickness is 3 ⁇ .
- the developability test results are shown in Table 2. among them:
- the negative photoresist resist composition made of the polymer of Comparative Example 1 having no hydrophilic group on the side chain, Example 1 provided by the present invention has a change in transmittance of less than 5%, showing good alkali resistance.
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Chemical & Material Sciences (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Macromonomer-Based Addition Polymer (AREA)
Abstract
Description
Claims
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US14/348,662 US9512242B2 (en) | 2013-03-07 | 2013-06-27 | Polymerizable oligomer and photoresist composition comprising the same |
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CN201310072957.2A CN103145555B (zh) | 2013-03-07 | 2013-03-07 | 可聚合寡聚物和光刻胶组合物 |
CN201310072957.2 | 2013-03-07 |
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CN108546485A (zh) * | 2017-12-04 | 2018-09-18 | 苏州吉人高新材料股份有限公司 | 一种高固含量的有机-无机杂化树脂及其制备方法 |
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CN103145555B (zh) | 2013-03-07 | 2015-08-12 | 京东方科技集团股份有限公司 | 可聚合寡聚物和光刻胶组合物 |
CN103130955B (zh) | 2013-03-07 | 2015-06-17 | 京东方科技集团股份有限公司 | 一种光刻胶用光敏性寡聚物、其制备方法及负性光刻胶组合物 |
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CN108546485A (zh) * | 2017-12-04 | 2018-09-18 | 苏州吉人高新材料股份有限公司 | 一种高固含量的有机-无机杂化树脂及其制备方法 |
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US20160137758A1 (en) | 2016-05-19 |
CN103145555B (zh) | 2015-08-12 |
CN103145555A (zh) | 2013-06-12 |
US9512242B2 (en) | 2016-12-06 |
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