WO2014084175A1 - Feuille de résine thermodurcissable et procédé de fabrication d'emballage de composant électronique - Google Patents

Feuille de résine thermodurcissable et procédé de fabrication d'emballage de composant électronique Download PDF

Info

Publication number
WO2014084175A1
WO2014084175A1 PCT/JP2013/081672 JP2013081672W WO2014084175A1 WO 2014084175 A1 WO2014084175 A1 WO 2014084175A1 JP 2013081672 W JP2013081672 W JP 2013081672W WO 2014084175 A1 WO2014084175 A1 WO 2014084175A1
Authority
WO
WIPO (PCT)
Prior art keywords
thermosetting resin
resin sheet
electronic component
thermosetting
manufacturing
Prior art date
Application number
PCT/JP2013/081672
Other languages
English (en)
Japanese (ja)
Inventor
剛 鳥成
豊田 英志
祐作 清水
Original Assignee
日東電工株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to SG11201504009UA priority Critical patent/SG11201504009UA/en
Publication of WO2014084175A1 publication Critical patent/WO2014084175A1/fr

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22Di-epoxy compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/50Amines
    • C08G59/5046Amines heterocyclic
    • C08G59/5053Amines heterocyclic containing only nitrogen as a heteroatom
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62Alcohols or phenols
    • C08G59/621Phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/04Carbon
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L53/02Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/295Organic, e.g. plastic containing a filler
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19Manufacturing methods of high density interconnect preforms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19Manufacturing methods of high density interconnect preforms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9212Sequential connecting processes
    • H01L2224/92122Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161Exposing the passive side of the semiconductor or solid-state body of a flip chip
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18162Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

Definitions

  • the present invention relates to a thermosetting resin sheet and a method for manufacturing an electronic component package.
  • an electronic component package typically, an electronic component fixed to a substrate, a temporary fixing material or the like is sealed with a sealing resin, and if necessary, the sealed material is packaged in units of electronic components.
  • the procedure of dicing is adopted.
  • an electronic component is manufactured from a wafer and sealed as it is to manufacture an electronic component package, a technology in which a plurality of electronic components are sealed in a wafer shape to form a sealed package, or A technique has been developed in which large-area electronic components are sealed and then separated into individual pieces by dicing.
  • a technique has been proposed which is performed by potting with a liquid thermosetting resin composition (Patent Document 1).
  • the area of the wafer-like encapsulated material will further increase for the purpose of cost reduction.
  • the resin may flow during molding due to its resin characteristics, resulting in a change in the resin composition, and it may not be possible to manufacture a semiconductor device with stable quality. is there.
  • An object of the present invention is to provide a thermosetting resin sheet capable of stably producing a high-quality electronic component package without causing fluctuations in the resin composition even during resin sealing in a large area, and an electronic component package using the same It is in providing the manufacturing method of.
  • thermosetting resin sheet As a result of intensive studies, the present inventors have found that the above problems can be solved by employing a specific thermosetting resin sheet, and have completed the present invention.
  • the present invention It is a thermosetting resin sheet in a B stage state that includes an inorganic filler and has a projected area in plan view of 31400 mm 2 or more.
  • thermosetting resin sheet since the projected area in plan view is 31400 mm 2 or more, a large-area electronic component (for example, an 8-inch wafer) can be easily sealed with resin and a plurality of electronic components Can be encapsulated in a large-area wafer in a batch.
  • thermosetting resin sheet since the thermosetting resin sheet is in a B-stage state, the resin composition is softened to some extent during resin sealing, but does not fluidize, and as a result, fluctuations in the resin composition represented by the uneven distribution of inorganic fillers. Can be suppressed, and a stable quality electronic component package can be manufactured. Furthermore, since it is in a B-stage state, it is easy to handle, and for example, resin sealing can be performed by simple pressing without using a special mold or spacer for resin sealing.
  • B stage refers to the intermediate state of curing of a thermosetting resin in accordance with the provisions of JIS K6800. It softens when the resin is heated and swells when exposed to certain solvents, but completely melts. ⁇ A state that does not dissolve.
  • the elastic modulus before thermosetting is preferably 1.5 ⁇ 10 3 Pa or more and 3 ⁇ 10 3 Pa or less in a temperature range of 90 to 130 ° C.
  • the elastic modulus before thermosetting in the above range, it can be sufficiently softened to follow the fluidity of the resin and to follow even if the shape of the electronic component or adherend is complicated, A high-quality electronic component package can be produced more efficiently.
  • the measurement procedure of the elasticity modulus of the thermosetting resin sheet before thermosetting is based on description of an Example.
  • the inorganic filler preferably has an average particle size of 54 ⁇ m or less. Thereby, even if it softens in the case of resin sealing, the dispersion state of an inorganic filler can be maintained favorable and the fluctuation
  • the content of the inorganic filler is preferably 70% by weight or more and 95% by weight or less.
  • thermosetting resin sheet preferably contains an elastomer, an epoxy resin, and a phenol resin. Thereby, the favorable handling property before resin sealing, softening property, and high reliability after resin sealing (after thermosetting) are securable.
  • the present invention also includes a thermosetting resin sheet wound body in which a long body of the thermosetting resin sheet is wound into a roll.
  • the present invention is a method of manufacturing an electronic component package, A lamination step of laminating the thermosetting resin sheet on the electronic component so as to cover one or a plurality of electronic components, and a sealing body forming step of forming a sealing body by thermosetting the thermosetting resin sheet Including Also included is a method for manufacturing an electronic component package, in which the proportion of the planar projection area of the electronic component in the planar projection area of the thermosetting resin sheet is 50% or more.
  • thermosetting resin sheet since a predetermined thermosetting resin sheet is used, it is possible to easily and efficiently perform resin sealing in a large area of an electronic component.
  • area occupation ratio since the ratio of the planar projection area of the electronic component in the planar projection area of the thermosetting resin sheet (hereinafter also simply referred to as “area occupation ratio”) is 50% or more, the electronic component per unit area The number of processes can be increased, and manufacturing with higher efficiency and lower cost becomes possible.
  • thermosetting resin sheet in the B-stage state can maintain the shape of the initial state to a certain extent without fluidizing while sufficiently softening at the time of resin sealing.
  • a thermosetting resin sheet can be laminated on an electronic component by a simple hot press process without using a special mold or the like for shape maintenance or molding.
  • the manufacturing method may further include a dicing step of dicing the sealing body to form an electronic component module. Since electronic parts can be sealed in a large area, the width of product design can be widened.
  • the electronic component may be a semiconductor chip or a semiconductor wafer.
  • thermosetting resin sheet which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the electronic component package which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the electronic component package which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the electronic component package which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the electronic component package which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the electronic component package which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the electronic component package which concerns on one Embodiment of this invention.
  • thermosetting resin sheet The thermosetting resin sheet according to the present embodiment will be described with reference to FIG.
  • FIG. 1 is a cross-sectional view schematically showing a thermosetting resin sheet according to an embodiment of the present invention.
  • the thermosetting resin sheet 11 in the B-stage state is typically provided in a state of being laminated on a support 11a such as a polyethylene terephthalate (PET) film. Note that a release treatment may be applied to the support 11a in order to easily peel the thermosetting resin sheet 11.
  • PET polyethylene terephthalate
  • Plan view projection area of the thermosetting resin sheet 11 may be any 31400Mm 2 or more, preferably 49063Mm 2 or more, more preferably 70650Mm 2 or more.
  • the upper limit of the planar projection area is not particularly limited, and can be set as appropriate according to the production line design. For example, it may be 70650 mm 2 or less (equivalent to a 12-inch wafer), and in the future, 125600 mm 2 or less. (Equivalent to a 16-inch wafer) may be used. Needless to say, a larger projected area in plan view can also be suitably employed.
  • the plan view shape of the thermosetting resin sheet 11 is not particularly limited, and may be a circle, an ellipse, a racetrack, a rectangle, a square, a rhombus, a parallelogram, a triangle having an arbitrary interior angle, a rectangle, a pentagon, a hexagon, or the like. Any shape having an outline formed by a straight line, a curved line, or a combination thereof can be adopted.
  • the lower limit of the elastic modulus of the thermosetting resin sheet 11 before thermosetting is preferably 1.5 ⁇ 10 3 Pa or more in the temperature range of 90 to 130 ° C., and is 1.7 ⁇ 10 3 Pa or more. More preferably, it is more preferably 2.5 ⁇ 10 3 Pa or more.
  • the upper limit of the elastic modulus before thermosetting is preferably 3 ⁇ 10 4 Pa or less, more preferably 2 ⁇ 10 4 Pa or less, and further preferably 1.5 ⁇ 10 4 Pa or less. .
  • the resin composition for forming the thermosetting resin sheet is not particularly limited as long as it has the above-described characteristics and can be used for resin sealing of electronic components such as semiconductor chips.
  • the following A An epoxy resin composition containing an E component to a component is preferable.
  • the C component may or may not be added as necessary.
  • the epoxy resin (component A) is not particularly limited.
  • Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
  • a modified bisphenol A type epoxy resin having a flexible skeleton such as an acetal group or a polyoxyalkylene group is preferable, and a modified bisphenol A type epoxy resin having an acetal group is in a liquid state and is easy to handle. Therefore, it can be particularly preferably used.
  • the content of the epoxy resin (component A) is preferably set in the range of 1 to 10% by weight with respect to the entire epoxy resin composition.
  • the phenol resin (component B) is not particularly limited as long as it causes a curing reaction with the epoxy resin (component A).
  • a phenol novolak resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used. These phenolic resins may be used alone or in combination of two or more.
  • phenol resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin (component A), and above all, from the viewpoint of high curing reactivity.
  • a phenol novolac resin can be preferably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
  • the blending ratio of the epoxy resin (component A) and the phenol resin (component B) is a hydroxyl group in the phenol resin (component B) with respect to 1 equivalent of the epoxy group in the epoxy resin (component A). It is preferable to blend so that the total amount becomes 0.7 to 1.5 equivalents, more preferably 0.9 to 1.2 equivalents.
  • the structure There is no particular limitation on the structure as long as it has such an effect.
  • various acrylic copolymers such as polyacrylates, styrene acrylate copolymers, butadiene rubber, styrene-butadiene rubber (SBR), ethylene-vinyl acetate copolymer (EVA), isoprene rubber, acrylonitrile rubber, etc. Polymers can be used.
  • thermosetting resin sheet can be improved because it is easily dispersed in the epoxy resin (component A) and has high reactivity with the epoxy resin (component A). It is preferable to use an acrylic copolymer. These may be used alone or in combination of two or more.
  • the acrylic copolymer can be synthesized, for example, by radical polymerization of an acrylic monomer mixture having a predetermined mixing ratio by a conventional method.
  • a method for radical polymerization a solution polymerization method in which an organic solvent is used as a solvent or a suspension polymerization method in which polymerization is performed while dispersing raw material monomers in water are used.
  • polymerization initiator used in this case examples include 2,2′-azobisisobutyronitrile, 2,2′-azobis- (2,4-dimethylvaleronitrile), and 2,2′-azobis-4- Methoxy-2,4-dimethylvaleronitrile, other azo or diazo polymerization initiators, peroxide polymerization initiators such as benzoyl peroxide and methyl ethyl ketone peroxide are used.
  • a dispersing agent such as polyacrylamide or polyvinyl alcohol.
  • the content of the elastomer (component C) is 15 to 30% by weight of the entire epoxy resin composition. If the content of the elastomer (component C) is less than 15% by weight, it becomes difficult to obtain the flexibility and flexibility of the thermosetting resin sheet 11, and further the resin sealing that suppresses the warp of the thermosetting resin sheet. It will also be difficult. On the other hand, when the content exceeds 30% by weight, the melt viscosity of the thermosetting resin sheet 11 is increased, the embedding property of the electronic component is lowered, and the strength and heat resistance of the cured body of the thermosetting resin sheet 11 are reduced. Tend to decrease.
  • the weight ratio of the elastomer (component C) to the epoxy resin (component A) is preferably set in the range of 3 to 4.7.
  • weight ratio is less than 3, it is difficult to control the fluidity of the thermosetting resin sheet 11, and when it exceeds 4.7, the adhesion of the thermosetting resin sheet 11 to electronic components tends to be inferior. Because it is seen.
  • the inorganic filler (component D) is not particularly limited, and various conventionally known fillers can be used.
  • the internal stress is reduced by reducing the coefficient of thermal expansion of the cured product of the epoxy resin composition, and as a result, warpage of the thermosetting resin sheet 11 after sealing of the electronic component can be suppressed.
  • a powder it is more preferable to use a fused silica powder among the silica powders.
  • the fused silica powder include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, it is particularly preferable to use a spherical fused silica powder.
  • those having an average particle diameter in the range of 54 ⁇ m or less are preferably used, those in the range of 0.1 to 30 ⁇ m are more preferable, and those in the range of 0.3 to 15 ⁇ m are particularly preferable.
  • the average particle diameter can be derived by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the content of the inorganic filler (component D) is preferably 70 to 95% by weight of the entire epoxy resin composition, more preferably 75 to 92% by weight, and still more preferably 80 to 90% by weight.
  • the content of the inorganic filler (component D) is less than 50% by weight, the linear expansion coefficient of the cured product of the epoxy resin composition increases, and thus the warp of the thermosetting resin sheet 11 tends to increase.
  • liquidity of the thermosetting resin sheet 11 will worsen when the said content exceeds 90 weight%, the tendency for the adhesiveness with an electronic component to fall is seen.
  • the curing accelerator (component E) is not particularly limited as long as it allows curing of the epoxy resin and the phenol resin, but from the viewpoint of curability and storage stability, triphenylphosphine or tetraphenylphosphonium tetraphenyl. Organic phosphorus compounds such as borates and imidazole compounds are preferably used. These curing accelerators may be used alone or in combination with other curing accelerators.
  • the content of the curing accelerator (component E) is preferably 0.1 to 5 parts by weight with respect to a total of 100 parts by weight of the epoxy resin (component A) and the phenol resin (component B).
  • a flame retardant component may be added to the epoxy resin composition.
  • various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, and complex metal hydroxide can be used.
  • the average particle diameter of the metal hydroxide is preferably 1 to 10 ⁇ m, more preferably 2 to 5 ⁇ m, from the viewpoint of ensuring appropriate fluidity when the epoxy resin composition is heated. It is.
  • the average particle size of the metal hydroxide is less than 1 ⁇ m, it becomes difficult to uniformly disperse in the epoxy resin composition, and the fluidity during heating of the epoxy resin composition tends to be insufficient.
  • the surface area per addition amount of a metal hydroxide (E component) will become small when an average particle diameter exceeds 10 micrometers, the tendency for a flame-retardant effect to fall is seen.
  • a phosphazene compound can be used in addition to the above metal hydroxide.
  • phosphazene compounds for example, SPR-100, SA-100, SP-100 (above, Otsuka Chemical Co., Ltd.), FP-100, FP-110 (above, Fushimi Pharmaceutical Co., Ltd.) and the like are commercially available. is there.
  • the phosphazene compound represented by the formula (1) or the formula (2) is preferable from the viewpoint of exhibiting a flame retardant effect even in a small amount, and the content of phosphorus element contained in these phosphanzene compounds is 12% by weight or more. Is preferred.
  • n is an integer of 3 to 25
  • R 1 and R 2 are the same or different and are selected from the group consisting of an alkoxy group, a phenoxy group, an amino group, a hydroxyl group and an allyl group.
  • a monovalent organic group having (In the formula (2), n and m are each independently an integer of 3 to 25.
  • R 3 and R 5 are the same or different and are composed of an alkoxy group, a phenoxy group, an amino group, a hydroxyl group and an allyl group.
  • R 4 is a divalent organic group having a functional group selected from the group consisting of an alkoxy group, a phenoxy group, an amino group, a hydroxyl group and an allyl group. .
  • n is an integer of 3 to 25
  • R 6 and R 7 are the same or different and are hydrogen, a hydroxyl group, an alkyl group, an alkoxy group, or a glycidyl group.
  • the cyclic phosphazene oligomer represented by the above formula (3) is commercially available, for example, FP-100, FP-110 (above, Fushimi Pharmaceutical Co., Ltd.) and the like.
  • the content of the phosphazene compound includes the epoxy resin (component A), phenol resin (component B), elastomer (component D), curing accelerator (component E) and phosphazene compound (other components) contained in the epoxy resin composition. It is preferably 10 to 30% by weight of the total organic component containing. That is, when the content of the phosphazene compound is less than 10% by weight of the total organic components, the flame retardancy of the thermosetting resin sheet 11 is reduced and the unevenness on the adherend (for example, a substrate on which an electronic component is mounted). There is a tendency that the followability is lowered and voids are generated. When the content exceeds 30% by weight of the whole organic component, tackiness is likely to occur on the surface of the thermosetting resin sheet 11, and the workability tends to be lowered, such as difficulty in alignment with the adherend. .
  • the above-described metal hydroxide and phosphazene compound can be used in combination, and the thermosetting resin sheet 11 having excellent flame retardancy can be obtained while ensuring the flexibility necessary for sheet sealing.
  • the thermosetting resin sheet 11 having excellent flame retardancy can be obtained while ensuring the flexibility necessary for sheet sealing.
  • flame retardants organic-based from the viewpoint of the deformability of the thermosetting resin sheet at the time of molding of the resin sealing, the followability to the unevenness of the electronic component or adherend, and the adhesion to the electronic component or adherend It is desirable to use a flame retardant, and a phosphazene flame retardant is particularly preferably used.
  • the epoxy resin composition can be appropriately mixed with other additives such as pigments including carbon black as necessary.
  • thermosetting resin sheet A method for producing a thermosetting resin sheet will be described below.
  • an epoxy resin composition is prepared by mixing the above-described components.
  • the mixing method is not particularly limited as long as each component is uniformly dispersed and mixed.
  • a varnish in which each component is dissolved or dispersed in an organic solvent or the like is applied to form a sheet.
  • a kneaded material may be prepared by directly kneading each compounding component with a kneader or the like, and the kneaded material thus obtained may be extruded to form a sheet.
  • the above components A to E and other additives as necessary are mixed as appropriate according to a conventional method, and uniformly dissolved or dispersed in an organic solvent to prepare a varnish.
  • the B-stage thermosetting resin sheet 11 can be obtained by applying the varnish on a support such as polyester and drying it. If necessary, a release sheet such as a polyester film may be bonded to protect the surface of the thermosetting resin sheet. The release sheet peels at the time of sealing.
  • the organic solvent is not particularly limited, and various conventionally known organic solvents such as methyl ethyl ketone, acetone, cyclohexanone, dioxane, diethyl ketone, toluene, and ethyl acetate can be used. These may be used alone or in combination of two or more. Usually, it is preferable to use an organic solvent so that the solid content concentration of the varnish is in the range of 30 to 60% by weight.
  • the thickness of the sheet after drying the organic solvent is not particularly limited, but is usually preferably set to 5 to 100 ⁇ m, more preferably 20 to 70 ⁇ m, from the viewpoint of thickness uniformity and the amount of residual solvent. is there.
  • the above components A to E and, if necessary, each component of other additives are mixed using a known method such as a mixer, and then kneaded to prepare a kneaded product.
  • the method of melt kneading is not particularly limited, and examples thereof include a method of melt kneading with a known kneader such as a mixing roll, a pressure kneader, or an extruder.
  • a kneader for example, a kneading screw having a portion in which the protruding amount of the screw blade from the screw shaft in a part of the axial direction is smaller than the protruding amount of the screw blade of the other portion or the shaft
  • a kneader equipped with a kneading screw having no screw blades in a part of the direction can be suitably used.
  • Low shear force and low agitation in the part where the protruding amount of the screw wing is small or where there is no screw wing increases the compression rate of the kneaded product, and it is possible to eliminate the trapped air and generate pores in the obtained kneaded product Can be suppressed.
  • the kneading conditions are not particularly limited as long as the temperature is equal to or higher than the softening point of each component described above.
  • the thermosetting property of the epoxy resin it is preferably 40 to 140 ° C., more preferably The temperature is 60 to 120 ° C., and the time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes. Thereby, a kneaded material can be prepared.
  • the thermosetting resin sheet 11 in a B-stage state can be obtained by molding the obtained kneaded material by extrusion molding.
  • the thermosetting resin sheet 11 can be formed by extrusion molding without cooling the kneaded product after melt-kneading while maintaining a high temperature state.
  • Such an extrusion method is not particularly limited, and examples thereof include a T-die extrusion method, a roll rolling method, a roll kneading method, a co-extrusion method, and a calendar molding method.
  • the extrusion temperature is not particularly limited as long as it is equal to or higher than the softening point of each component described above.
  • the thermosetting property and moldability of the epoxy resin for example, 40 to 150 ° C., preferably 50 to 140 ° C. Preferably, it is 70 to 120 ° C.
  • the thermosetting resin sheet 11 can be formed.
  • thermosetting resin sheet thus obtained may be used by being laminated so as to have a desired thickness if necessary. That is, the thermosetting resin sheet may be used in a single layer structure, or may be used as a laminate formed by laminating two or more multilayer structures.
  • FIGS. 2A to 2E are cross-sectional views schematically showing one process of a method for manufacturing an electronic component package according to an embodiment of the present invention.
  • a semiconductor chip mounted on a substrate is sealed with a thermosetting resin sheet to produce an electronic component package.
  • a semiconductor chip is used as the electronic component and a printed wiring board is used as the adherend.
  • other elements may be used.
  • a capacitor, a sensor device, a light emitting element, a vibration element or the like can be used as an electronic component, and a lead frame, a tape carrier, or the like can be used as an adherend.
  • a lead frame, a tape carrier, or the like can be used as an adherend.
  • the method for manufacturing an electronic component package according to the first embodiment is suitable for manufacturing a flip-chip type mounting substrate.
  • a printed wiring board 12 on which a plurality of semiconductor chips 13 are mounted is prepared (see FIG. 2A).
  • the semiconductor chip 13 can be formed by dicing a semiconductor wafer on which a predetermined circuit is formed by a known method.
  • a known apparatus such as a flip chip bonder or a die bonder can be used.
  • the semiconductor chip 13 and the printed wiring board 12 are electrically connected via protruding electrodes 13a such as bumps.
  • an underfill material 14 is filled between the semiconductor chip 13 and the printed wiring board 12 in order to alleviate the difference in thermal expansion coefficient between them and particularly to prevent the occurrence of cracks or the like at the connection site.
  • a known material may be used as the underfill material 14.
  • the underfill material 14 may be arranged by injecting the liquid underfill material 14 between the semiconductor chip 13 and the semiconductor chip 13 on the printed wiring board 12, or a semiconductor with a sheet-like underfill material 14. The preparation may be performed by connecting the semiconductor chip 13 and the printed wiring board 12 after preparing the chip 13 or the printed wiring board 12.
  • thermosetting resin sheet 11 is laminated on the printed wiring board 12 so as to cover the semiconductor chip 13, and the semiconductor chip 13 is resin-sealed with the thermosetting resin sheet (see FIG. 2B).
  • the thermosetting resin sheet 11 functions as a sealing resin for protecting the semiconductor chip 13 and its accompanying elements from the external environment.
  • the method for laminating the thermosetting resin sheet 11 is not particularly limited, and a melt-kneaded product of a resin composition for forming a thermosetting resin sheet is extruded and the extruded product is placed on the printed wiring board 12. Then, a method for forming and laminating the thermosetting resin sheet 11 at once by pressing and a resin composition for forming the thermosetting resin sheet 11 are applied onto the release treatment sheet and applied. For example, a method of transferring the thermosetting resin sheet 11 onto the printed wiring board 12 after the film is dried to form the thermosetting resin sheet 11 may be used.
  • thermosetting resin sheet 11 by adopting the thermosetting resin sheet 11, the semiconductor chip 13 can be embedded simply by sticking on the printed wiring board 12 to the cover of the semiconductor chip 13, thereby improving the production efficiency of the semiconductor package. Can be made.
  • the thermosetting resin sheet 11 can be laminated on the printed wiring board 12 by a known method such as hot pressing or laminator.
  • the temperature is, for example, 40 to 120 ° C., preferably 50 to 100 ° C.
  • the pressure is, for example, 50 to 2500 kPa, preferably 100 to 2000 kPa
  • the time is, for example, 0 3 to 10 minutes, preferably 0.5 to 5 minutes.
  • it is preferable to perform pressing under reduced pressure conditions for example, 10 to 2000 Pa).
  • the ratio of the planar projection area of the electronic component in the planar projection area of the thermosetting resin sheet may be 50% or more, preferably 80% or more, and more preferably 85% or more.
  • the upper limit of the area occupation ratio is preferably 100% or less, but may be a lower value (for example, 98% or less).
  • Examples of the case where the area occupation ratio is 100% include a mode in which the wafer is sealed with a thermosetting resin sheet having the same planar projection area as that of the wafer, as described in the second embodiment, but is not limited thereto.
  • the aspect with the same planar projection area of an electronic component and a thermosetting resin sheet is mentioned.
  • thermosetting resin sheet is thermoset to form the sealing body 15 (see FIG. 2B).
  • the conditions for the thermosetting treatment of the thermosetting resin sheet are preferably 100 to 200 ° C., more preferably 120 to 180 ° C. as the heating temperature, and preferably 10 to 180 minutes, more preferably 30 to 120 minutes as the heating time. In the meantime, you may pressurize as needed. In the pressurization, preferably 0.1 MPa to 10 MPa, more preferably 0.5 MPa to 5 MPa can be employed.
  • the surface of the sealing body 15 is ground to form the grinding body 16 (see FIG. 2C).
  • the semiconductor chip 13 may be ground together with the thermosetting resin sheet 11 as shown in FIG. 2C, or only the thermosetting resin sheet 11 may be ground. Grinding may be performed using a known grinding apparatus. A procedure for forming the grinding body 16 having a predetermined thickness by rotating the grinding tool such as a diamond tool while grinding the surface of the sealing body while feeding the sealing body 15 to the grinding tool can be suitably employed.
  • bumping may be performed to form bumps 17 on the surface opposite to the semiconductor chip mounting surface of the printed wiring board 12 (see FIG. 2D).
  • the bumping process can be performed by a known method such as a solder ball or solder plating.
  • the material of the bump is not particularly limited.
  • tin-lead metal material tin-silver metal material, tin-silver-copper metal material, tin-zinc metal material, tin-zinc-bismuth metal material, etc.
  • Solders alloys
  • gold-based metal materials copper-based metal materials, and the like.
  • a cutting method called full cut that cuts up to a dicing sheet can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used.
  • the expanding device when expanding a grinding body following a dicing process, this expansion can be performed using a conventionally well-known expanding apparatus.
  • the expanding device includes a donut-shaped outer ring that can push down the dicing sheet through the dicing ring, and an inner ring that has a smaller diameter than the outer ring and supports the dicing sheet.
  • a board mounting process for mounting the electronic module 18 obtained above on a separate board can be performed.
  • a known device such as a flip chip bonder or a die bonder can be used.
  • FIGS. 3A to 3E are cross-sectional views schematically showing one process of a method for manufacturing an electronic component package according to another embodiment of the present invention.
  • a plurality of protruding electrodes 23a may be formed on one side (see FIG. 3A), or protruding electrodes may be formed on both sides of the semiconductor wafer 29 (not shown).
  • the material of the bump electrode or conductive material such as a conductive material.
  • a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, a tin-zinc metal material examples thereof include solders (alloys) such as a tin-zinc-bismuth metal material, a gold metal material, and a copper metal material.
  • the height of the protruding electrode is also determined according to the application, and is generally about 20 to 200 ⁇ m.
  • the projecting electrodes on both surfaces may or may not be electrically connected.
  • Examples of the electrical connection between the protruding electrodes include a connection through a via called a TSV format.
  • thermosetting resin sheet 21 is laminated on the semiconductor wafer 29 so as to cover the protruding electrodes 23a, and one surface of the semiconductor wafer 29 is resin-sealed with the thermosetting resin sheet (see FIG. 3B).
  • This thermosetting resin sheet 21 functions as a sealing resin for protecting the semiconductor wafer 29 and its accompanying elements from the external environment.
  • the same conditions as in the first embodiment can be adopted for the method of laminating the thermosetting resin sheet 21 on the semiconductor wafer 29.
  • thermosetting resin sheet 21 is subjected to a thermosetting process to form the sealing body 25 (see FIG. 3B).
  • the conditions for the thermosetting treatment of the thermosetting resin sheet 21 can be the same conditions as in the first embodiment.
  • grinding process In the grinding step, the surface of the sealing body 25 is ground to form the grinding body 26 (see FIG. 3C). At the time of grinding, as shown in FIG. 3C, grinding is performed so that the protruding electrode 23a is exposed. Grinding may be performed using a known grinding apparatus.
  • bump formation process Next, bumping is performed to form bumps 27 on the exposed protruding electrodes 23a (see FIG. 3D).
  • the bumping method and bump material can be the same as those in the first embodiment.
  • the grinding body 26 composed of elements such as the thermosetting resin sheet 21, the semiconductor wafer 29, and the bumps 27 may be diced (see FIG. 3E). Thereby, the electronic module 28 in the semiconductor chip 23 unit can be obtained.
  • the dicing method the same method as in the first embodiment can be adopted.
  • a board mounting process for mounting the electronic module 28 obtained above on a separate board can be performed.
  • a known device such as a flip chip bonder or a die bonder can be used.
  • FIGS. 4A to 4G are cross-sectional views schematically showing one process of a method for manufacturing an electronic component package according to still another embodiment of the present invention.
  • the semiconductor chip mounted on the printed wiring board is resin-sealed with a thermosetting resin sheet, but in the third embodiment, the semiconductor chip is temporarily fixed instead of an adherend such as a substrate. Resin sealing is performed while temporarily fixed to the material.
  • the third embodiment is suitable for manufacturing an electronic component package called a so-called Fan-out (fan-out) wafer level package (WLP).
  • WLP Fan-out wafer level package
  • Temporal fixing material preparation process In the temporary fixing material preparing step, the temporary fixing material 3 in which the thermally expandable pressure-sensitive adhesive layer 3a is laminated on the support 3b is prepared (see FIG. 4A). In addition, it can replace with a thermally expansible adhesive layer, and can also use a radiation curing type adhesive layer. In the present embodiment, a temporary fixing material 3 including a thermally expandable pressure-sensitive adhesive layer will be described.
  • the heat-expandable pressure-sensitive adhesive layer 3a can be formed of a pressure-sensitive adhesive composition containing a polymer component and a foaming agent.
  • a polymer component particularly the base polymer
  • an acrylic polymer sometimes referred to as “acrylic polymer A”
  • acrylic polymer A examples include those using (meth) acrylic acid ester as a main monomer component.
  • Examples of the (meth) acrylic acid ester include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, sec-butyl ester, t-butyl ester, Pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, Linear or branched alkyl ester having 1 to 30 carbon atoms, particularly 4 to 18 carbon atoms, of an alkyl group such as hexadecyl ester, oct
  • the acrylic polymer A corresponds to other monomer components that can be copolymerized with the (meth) acrylic acid ester, if necessary, for the purpose of modifying cohesive strength, heat resistance, crosslinkability, and the like. Units may be included.
  • monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and carboxyethyl acrylate; acid anhydrides such as maleic anhydride and itaconic anhydride Group-containing monomers; hydroxyl group-containing monomers such as hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, and hydroxybutyl (meth) acrylate; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, (N-substituted or unsubstituted) amide monomers such as N-butyl (meth) acrylamide, N-
  • (Substituted or unsubstituted) amino group-containing monomers (meth) acrylic acid alkoxyalkyl monomers such as methoxyethyl (meth) acrylate and ethoxyethyl (meth) acrylate; N-vinylpyrrolidone, N -Methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N -Monomers having a nitrogen atom-containing ring such as vinylcaprolactam; N-vinylcarboxylic amides; Monomers containing sulfonic acid groups such as styrene sulfonic acid, allyl sulfonic acid, (meth) acryl
  • the acrylic polymer A can be obtained by polymerizing a single monomer or a mixture of two or more monomers.
  • the polymerization may be performed by any method such as solution polymerization (for example, radical polymerization, anionic polymerization, cationic polymerization), emulsion polymerization, bulk polymerization, suspension polymerization, photopolymerization (for example, ultraviolet (UV) polymerization). it can.
  • the weight average molecular weight of the acrylic polymer A is not particularly limited, but is preferably 350,000 to 1,000,000, more preferably about 450,000 to 800,000.
  • an external cross-linking agent can be appropriately used for the heat-expandable pressure-sensitive adhesive in order to adjust the adhesive force.
  • the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them.
  • a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them.
  • the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive.
  • the amount of the external crosslinking agent used is generally 20 parts by weight or less (preferably 0.1 to 10 parts by weight) with respect to 100 parts by weight of the base polymer.
  • the heat-expandable pressure-sensitive adhesive layer 3a contains a foaming agent for imparting heat-expandability as described above. Therefore, in the state in which the grinding body 36 including the semiconductor chip 33 ground on the thermally expandable pressure-sensitive adhesive layer 3a of the temporary fixing material 3 is formed (see FIG. 4D), the temporary fixing material 3 is at least partially attached at any time. And the foaming agent contained in the heated thermally expandable pressure-sensitive adhesive layer 3a is foamed and / or expanded, so that the thermally expandable pressure-sensitive adhesive layer 3a is at least partially expanded.
  • the pressure-sensitive adhesive surface (interface with the grinding body 36) corresponding to the expanded portion is deformed into an uneven shape, and the heat-expandable pressure-sensitive adhesive layer 3a and The adhesion area with the grinding body 36 is reduced, whereby the adhesive force between the two is reduced, and the grinding body 36 can be peeled from the temporary fixing material 3.
  • the foaming agent used in the heat-expandable pressure-sensitive adhesive layer 3a is not particularly limited and can be appropriately selected from known foaming agents.
  • a foaming agent can be used individually or in combination of 2 or more types.
  • thermally expandable microspheres can be suitably used.
  • the heat-expandable microsphere is not particularly limited, and can be appropriately selected from known heat-expandable microspheres (such as various inorganic heat-expandable microspheres and organic heat-expandable microspheres).
  • a microencapsulated foaming agent can be suitably used from the viewpoint of easy mixing operation.
  • thermally expandable microspheres include microspheres in which substances such as isobutane, propane, and pentane that are easily gasified and expanded by heating are encapsulated in an elastic shell.
  • the shell is often formed of a hot-melt material or a material that is destroyed by thermal expansion.
  • Examples of the substance forming the shell include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.
  • Thermally expandable microspheres can be produced by a conventional method such as a coacervation method or an interfacial polymerization method.
  • Examples of the thermally expandable microspheres include, for example, a series of “Matsumoto Microsphere F30” and “Matsumoto Microsphere F301D” (trade names “Matsumoto Microsphere F30”, manufactured by Matsumoto Yushi Seiyaku Co., Ltd.).
  • Commercially available products such as “051DU”, “053DU”, “551DU”, “551-20DU”, and “551-80DU” can be used.
  • the particle size (average particle diameter) of the thermally expandable microspheres can be appropriately selected according to the thickness of the thermally expandable pressure-sensitive adhesive layer. .
  • the average particle diameter of the heat-expandable microspheres can be selected from a range of, for example, 100 ⁇ m or less (preferably 80 ⁇ m or less, more preferably 1 ⁇ m to 50 ⁇ m, particularly 1 ⁇ m to 30 ⁇ m). Note that the adjustment of the particle size of the thermally expandable microspheres may be performed in the process of generating the thermally expandable microspheres, or may be performed by means such as classification after the generation. It is preferable that the thermally expandable microspheres have the same particle size.
  • a foaming agent other than the thermally expandable microsphere can also be used.
  • various foaming agents such as various inorganic foaming agents and organic foaming agents can be appropriately selected and used.
  • the inorganic foaming agent include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride, various azides and the like.
  • organic foaming agents include, for example, water; chlorofluorinated alkane compounds such as trichloromonofluoromethane and dichloromonofluoromethane; azobisisobutyronitrile, azodicarbonamide, and barium azodi.
  • Azo compounds such as carboxylates; hydrazine compounds such as paratoluenesulfonyl hydrazide, diphenylsulfone-3,3'-disulfonyl hydrazide, 4,4'-oxybis (benzenesulfonyl hydrazide), allyl bis (sulfonyl hydrazide); p- Semicarbazide compounds such as toluylenesulfonyl semicarbazide and 4,4′-oxybis (benzenesulfonyl semicarbazide); Triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole; N, N′-dinitrosope Data methylene terrorism lamin, N, N'-dimethyl -N, N'N-nitroso compounds such as dinitrosoterephthalamide, and the like.
  • the volume expansion coefficient is 5 times or more, especially 7 times or more, particularly 10 times or more.
  • a foaming agent having an appropriate strength that does not burst is preferred.
  • the amount of foaming agent can be set as appropriate depending on the expansion ratio of the thermally expandable pressure-sensitive adhesive layer and the ability to lower the adhesive strength, but generally a thermally expandable pressure-sensitive adhesive layer is formed.
  • the amount is, for example, 1 part by weight to 150 parts by weight (preferably 10 parts by weight to 130 parts by weight, more preferably 25 parts by weight to 100 parts by weight) with respect to 100 parts by weight of the base polymer.
  • a foaming agent having a foaming start temperature (thermal expansion start temperature) (T 0 ) in the range of 80 ° C. to 210 ° C. can be suitably used, preferably 90 ° C. to 200 ° C. (more The foaming start temperature is preferably from 95 ° C to 200 ° C, particularly preferably from 100 ° C to 170 ° C.
  • the foaming agent may foam due to heat during production or use of the sealing body or the grinding body, and handling properties and productivity are lowered.
  • the foaming starting temperature (T 0) of the blowing agent corresponding to the foaming starting temperature of the heat-expandable pressure-sensitive adhesive layer (T 0).
  • the foaming agent that is, a method of thermally expanding the thermally expandable pressure-sensitive adhesive layer
  • it can be appropriately selected from known heat foaming methods.
  • the heat-expandable pressure-sensitive adhesive layer has an elastic modulus of 23 ° C. in a form not containing a foaming agent from the viewpoint of a balance between moderate adhesive force before heat treatment and lowering of adhesive force after heat treatment. It is preferably 5 ⁇ 10 4 Pa to 1 ⁇ 10 6 Pa at ⁇ 150 ° C., more preferably 5 ⁇ 10 4 Pa to 8 ⁇ 10 5 Pa, and particularly 5 ⁇ 10 4 Pa to 5 ⁇ 10 5 Pa. It is preferable that When the elastic modulus (temperature: 23 ° C.
  • the thermal expandability may be inferior and the peelability may be deteriorated.
  • the elastic modulus (temperature: 23 ° C. to 150 ° C.) of the thermally expandable pressure-sensitive adhesive layer in a form not containing a foaming agent is larger than 1 ⁇ 10 6 Pa, the initial adhesiveness may be inferior.
  • the thermally expansible adhesive layer of the form which does not contain a foaming agent is corresponded to the adhesive layer formed with the adhesive (The foaming agent is not contained). Therefore, the elastic modulus of the thermally expandable pressure-sensitive adhesive layer in a form not containing a foaming agent can be measured using a pressure-sensitive adhesive (no foaming agent is included).
  • the heat-expandable pressure-sensitive adhesive layer includes a pressure-sensitive adhesive capable of forming a pressure-sensitive adhesive layer having an elastic modulus at 23 ° C. to 150 ° C. of 5 ⁇ 10 4 Pa to 1 ⁇ 10 6 Pa, and a thermal expansion containing a foaming agent. It can be formed with an adhesive.
  • the modulus of elasticity of the thermally expandable pressure-sensitive adhesive layer in the form not containing the foaming agent is the heat-expandable pressure-sensitive adhesive layer in the form in which the foaming agent is not added (that is, the pressure-sensitive adhesive layer by the pressure-sensitive adhesive not containing the foaming agent).
  • a rheometric dynamic viscoelasticity measuring device “ARES” sample thickness: about 1.5 mm, ⁇ 7.9 mm parallel plate jig, in shear mode , Frequency: 1 Hz, rate of temperature increase: 5 ° C./min, strain: 0.1% (23 ° C.), 0.3% (150 ° C.) measured at 23 ° C. and 150 ° C. shear storage elasticity obtained The value of the rate G ′ was used.
  • the elastic modulus of the thermally expandable pressure-sensitive adhesive layer can be controlled by adjusting the type of the base polymer of the pressure-sensitive adhesive, the crosslinking agent, the additive, and the like.
  • the thickness of the heat-expandable pressure-sensitive adhesive layer is not particularly limited, and can be appropriately selected depending on the reduction in adhesive strength, and is, for example, about 5 ⁇ m to 300 ⁇ m (preferably 20 ⁇ m to 150 ⁇ m). However, when heat-expandable microspheres are used as the foaming agent, the thickness of the heat-expandable pressure-sensitive adhesive layer is preferably thicker than the maximum particle size of the heat-expandable microspheres contained. When the thickness of the heat-expandable pressure-sensitive adhesive layer is too thin, the surface smoothness is impaired by the unevenness of the heat-expandable microspheres, and the adhesiveness before heating (unfoamed state) is lowered.
  • the degree of deformation of the heat-expandable pressure-sensitive adhesive layer by heat treatment is small, and the adhesive force is not easily lowered.
  • the thickness of the heat-expandable pressure-sensitive adhesive layer is too thick, cohesive failure is likely to occur in the heat-expandable pressure-sensitive adhesive layer after expansion or foaming by heat treatment, and adhesive residue may be generated in the grinding body 36. .
  • the thermally expandable pressure-sensitive adhesive layer may be either a single layer or multiple layers.
  • the heat-expandable pressure-sensitive adhesive layer has various additives (for example, a colorant, a thickener, a bulking agent, a filler, a tackifier, a plasticizer, an anti-aging agent, an antioxidant, and a surfactant. Agent, cross-linking agent, etc.).
  • additives for example, a colorant, a thickener, a bulking agent, a filler, a tackifier, a plasticizer, an anti-aging agent, an antioxidant, and a surfactant. Agent, cross-linking agent, etc.).
  • the support 3 b is a thin plate member that serves as a strength matrix of the temporary fixing material 3.
  • the material of the support 3b may be appropriately selected in consideration of handling properties, heat resistance, etc., for example, metal materials such as SUS, plastic materials such as polyimide, polyamideimide, polyetheretherketone, polyethersulfone, etc. Can be used. Among these, a SUS plate is preferable from the viewpoints of heat resistance, strength, reusability, and the like.
  • the thickness of the support 3b can be appropriately selected in consideration of the intended strength and handleability, and is preferably 100 to 5000 ⁇ m, more preferably 300 to 2000 ⁇ m.
  • the temporary fixing material 3 is obtained by forming the thermally expandable pressure-sensitive adhesive layer 3a on the support 3b.
  • the heat-expandable pressure-sensitive adhesive layer is, for example, a sheet obtained by mixing a pressure-sensitive adhesive (pressure-sensitive adhesive), a foaming agent (heat-expandable microspheres, etc.) and, if necessary, a solvent or other additives. It can be formed using a conventional method for forming a layer.
  • a method of applying a mixture containing a pressure-sensitive adhesive, a foaming agent (thermally expansible microspheres, etc.), and, if necessary, a solvent and other additives onto the support 3b, an appropriate separator
  • the heat-expandable pressure-sensitive adhesive layer can be formed by applying the mixture on a release paper or the like to form a heat-expandable pressure-sensitive adhesive layer and transferring (transferring) the mixture onto the support 3b. it can.
  • the thermally expandable pressure-sensitive adhesive layer can be thermally expanded by heating.
  • an appropriate heating means such as a hot plate, a hot air dryer, a near infrared lamp, an air dryer or the like can be used.
  • the heating temperature during the heat treatment may be equal to or higher than the foaming start temperature (thermal expansion start temperature) of the foaming agent (thermally expansible microspheres, etc.) in the heat-expandable pressure-sensitive adhesive layer.
  • Typical heat treatment conditions are a temperature of 100 ° C. to 250 ° C., and a time of 1 second to 90 seconds (hot plate or the like) or 5 minutes to 15 minutes (hot air dryer or the like). Note that the heat treatment can be performed at an appropriate stage depending on the purpose of use. In some cases, an infrared lamp or heated water can be used as the heat source during the heat treatment.
  • an intermediate layer may be provided between the heat-expandable pressure-sensitive adhesive layer 3a and the support 3b for the purpose of improving adhesion and improving peelability after heating (not shown).
  • a rubbery organic elastic intermediate layer is provided as the intermediate layer.
  • the adhesion area can be increased, and the thermal expansion of the thermally expandable pressure-sensitive adhesive layer 3a is highly enhanced when the grinding body 36 after grinding is heated and peeled off from the temporary fixing material 3 (
  • the heat-expandable pressure-sensitive adhesive layer 3a can be preferentially and uniformly expanded in the thickness direction.
  • the rubbery organic elastic intermediate layer can be interposed on one side or both sides of the support 3b.
  • the rubbery organic elastic intermediate layer is preferably formed of natural rubber, synthetic rubber, or synthetic resin having rubber elasticity with a D-type Sure D-type hardness of 50 or less, particularly 40 or less based on ASTM D-2240. Even if it is essentially a hard polymer such as polyvinyl chloride, rubber elasticity can be manifested in combination with compounding agents such as plasticizers and softeners. Such a composition can also be used as a constituent material of the rubbery organic elastic intermediate layer.
  • the rubber-like organic elastic intermediate layer is, for example, a method (coating method) in which a coating liquid containing a rubber-like organic elastic layer forming material such as natural rubber, synthetic rubber, or synthetic resin having rubber elasticity is applied onto a substrate, A method in which a film made of a rubbery organic elastic layer forming material or a laminated film in which a layer made of the rubbery organic elastic layer forming material is previously formed on one or more thermally expandable pressure-sensitive adhesive layers is bonded to a substrate (dry Laminating method), and a forming method such as a method of co-extruding a resin composition containing a constituent material of a base material and a resin composition containing the rubber-like organic elastic layer forming material (co-extrusion method).
  • a coating liquid containing a rubber-like organic elastic layer forming material such as natural rubber, synthetic rubber, or synthetic resin having rubber elasticity is applied onto a substrate
  • the rubbery organic elastic intermediate layer may be formed of a sticky substance mainly composed of natural rubber, synthetic rubber, or synthetic resin having rubber elasticity, and may be a foam film or the like mainly composed of such a component. It may be formed.
  • Foaming is a conventional method, for example, a method using mechanical stirring, a method using a reaction product gas, a method using a foaming agent, a method for removing soluble substances, a method using a spray, a method for forming a syntactic foam, It can be performed by a sintering method or the like.
  • the thickness of the intermediate layer such as the rubbery organic elastic intermediate layer is, for example, about 5 ⁇ m to 300 ⁇ m, preferably about 20 ⁇ m to 150 ⁇ m.
  • the intermediate layer is, for example, a rubber-like organic elastic intermediate layer, if the thickness of the rubber-like organic elastic intermediate layer is too thin, it is not possible to form a three-dimensional structural change after heating and foaming. Sexuality may worsen.
  • the intermediate layer such as the rubbery organic elastic intermediate layer may be a single layer or may be composed of two or more layers.
  • various additives for example, a colorant, a thickener, an extender, a filler, a tackifier, a plasticizer, an anti-aging agent, an oxidation agent, etc.
  • An inhibitor for example, a surfactant, a cross-linking agent, etc.
  • semiconductor chip placement process In the semiconductor chip placement step, a plurality of semiconductor chips 33 are placed on the temporary fixing material 3 (see FIG. 4A).
  • a known device such as a flip chip bonder or a die bonder can be used for arranging the semiconductor chip 33.
  • the layout and the number of arrangement of the semiconductor chips 33 can be appropriately set according to the shape and size of the temporary fixing material 3, the number of target packages produced, and the like, for example, a matrix of a plurality of rows and a plurality of columns. Can be arranged in a line.
  • thermosetting resin sheet 31 is laminated on the temporary fixing material 3 so as to cover the plurality of semiconductor chips 33 and is resin-sealed (see FIG. 4B).
  • the same conditions as in the first embodiment can be adopted for the method of laminating the thermosetting resin sheet 31 on the temporary fixing material 3.
  • thermosetting resin sheet 31 is subjected to a thermosetting process to form the sealing body 35 (see FIG. 4B).
  • the conditions for the thermosetting treatment of the thermosetting resin sheet 31 can employ the same conditions as in the first embodiment.
  • grinding process In the grinding step, the surface of the sealing body 35 is ground to form a ground body 36 (see FIG. 4C). At the time of grinding, as shown in FIG. 4C, grinding is performed so that the semiconductor chip 33 is exposed. Grinding may be performed using a known grinding apparatus.
  • the temporary fixing material 3 is heated to thermally expand the heat-expandable pressure-sensitive adhesive layer 3a, whereby the heat-expandable pressure-sensitive adhesive layer 3a is peeled between the ground body 36. (See FIG. 4D). Peeling at the interface between the heat-expandable pressure-sensitive adhesive layer 3a and the grinding body 36 can be easily performed by heating the heat-expandable pressure-sensitive adhesive layer 3a to thermally expand it to reduce its adhesive strength.
  • the conditions in the above-mentioned column “Thermal expansion method for thermally expandable pressure-sensitive adhesive layer” can be preferably employed.
  • the surface of the grinding body 36 may be cleaned by plasma treatment or the like prior to the rewiring forming step with the semiconductor chip 33 exposed.
  • a metal seed layer is formed on the exposed semiconductor chip 33 by using a known method such as a vacuum film forming method, and the rewiring is performed by a known method such as a semi-additive method.
  • the wiring 39 can be formed.
  • an insulating layer such as polyimide or PBO may be formed on the rewiring 39 and the grinding body 36.
  • bumping processing for forming bumps 37 on the formed rewiring 39 may be performed (see FIG. 4F).
  • the bumping process can be performed by a known method such as a solder ball or solder plating.
  • the material of the bump 37 the same material as that of the first embodiment can be suitably used.
  • thermosetting resin sheet Preparation of thermosetting resin sheet
  • the following components were blended with a mixer, melt kneaded for 2 minutes at 120 ° C. with a twin-screw kneader, and then extruded from a T die to produce an extruded product having a thickness of 500 ⁇ m.
  • the extruded product was cut so that the projected area in plan view was 17663 mm 2 and the plan view shape was circular, and a thermosetting resin sheet A was obtained.
  • Epoxy resin Bisphenol F type epoxy resin (manufactured by Nippon Steel Chemical Co., Ltd., YSLV-80XY (epochine equivalent 200 g / eq. Softening point 80 ° C.)) 286 parts
  • Phenol resin Phenol resin having a biphenylaralkyl skeleton (Maywa Kasei Co., Ltd., MEH-7851-SS (hydroxyl equivalent: 203 g / eq., Softening point: 67 ° C.))
  • Curing accelerator Imidazole catalyst as a curing catalyst (manufactured by Shikoku Chemicals Co., Ltd., 2PHZ-PW) 6 parts
  • Inorganic filler Spherical fused silica powder (manufactured by Denki Kagaku Kogyo, FB-9454, average particle size 20 ⁇ m) 3695 parts
  • Silane coupling agent Epoxy group-containing silane coupling agent (manufactured
  • thermosetting resin sheet Preparation of thermosetting resin sheet
  • the following components were blended with a mixer, melt kneaded for 2 minutes at 120 ° C. with a twin-screw kneader, and then extruded from a T die to produce an extruded product having a thickness of 500 ⁇ m.
  • the extruded product was cut so that the projected area in plan view was 17663 mm 2 and the plan view shape was circular, and a thermosetting resin sheet B was obtained.
  • Epoxy resin Bisphenol F type epoxy resin (manufactured by Nippon Steel Chemical Co., Ltd., YSLV-80XY (epochine equivalent 200 g / eq. Softening point 80 ° C.)) 169 parts
  • Phenol resin Phenol resin having biphenylaralkyl skeleton (Maywa Kasei Co., Ltd., MEH-7851-SS (hydroxyl equivalent: 203 g / eq., Softening point: 67 ° C.)) 179 parts
  • Curing accelerator Imidazole catalyst as a curing catalyst (manufactured by Shikoku Kasei Kogyo Co., Ltd., 2PHZ-PW) 6 parts
  • Elastomer Styrene / isobutylene / styrene triblock copolymer (manufactured by Kaneka Corporation, SIBSTAR 072T) 152 parts
  • Inorganic filler spherical fused
  • thermosetting resin sheet before thermosetting About the produced thermosetting resin sheet (sample) before thermosetting, using a dynamic viscoelasticity measuring device “ARES” manufactured by TA Instruments, the samples were stacked to have a thickness of about 1.5 mm and ⁇ 8 mm Using a parallel plate jig, measured in shear mode, frequency: 1 Hz, heating rate: 10 ° C./min, strain: 5% (90 ° C. to 130 ° C.), in the range of 90 ° C. to 130 ° C. The minimum value and the maximum value of the obtained shear storage modulus G ′ were determined. The results are shown in Table 1.
  • thermosetting resin sheets A to B were pasted on the obtained semiconductor chip mounting substrate by a vacuum press under the following heating and pressing conditions. At this time, the area occupation ratio of the semiconductor chip with respect to the thermosetting resin sheet was 55%.
  • thermosetting resin sheet was thermoset in a hot air dryer at 180 ° C. for 1 hour to obtain a sealed body.
  • the semiconductor package was fabricated by thinning the sealing body to a thickness of 150 ⁇ m together with the semiconductor chip by grinding using a cutting device (manufactured by DISCO Corporation, surface planar “DFS8910”).
  • thermosetting resin sheet does not show uneven distribution of the inorganic filler, and it can be seen that a high-quality semiconductor package can be produced.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

La présente invention concerne une feuille de résine thermodurcissable et un procédé de fabrication d'emballage de composant électronique utilisant cette feuille, qui permettent de fabriquer des emballages de composant électronique de grande qualité de manière stable sans fluctuations dans la composition de résine, même lors de la réalisation du scellement par résine d'une grande zone. La présente invention concerne une feuille de résine thermodurcissable de degré B qui contient une charge technique inorganique et qui a une zone de projection vue en plan d'au moins 31 400 mm².
PCT/JP2013/081672 2012-11-29 2013-11-25 Feuille de résine thermodurcissable et procédé de fabrication d'emballage de composant électronique WO2014084175A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG11201504009UA SG11201504009UA (en) 2012-11-29 2013-11-25 Thermosetting resin sheet and method for manufacturing electronic component package

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012261384 2012-11-29
JP2012-261384 2012-11-29
JP2013-240591 2013-11-21
JP2013240591A JP5943898B2 (ja) 2012-11-29 2013-11-21 熱硬化性樹脂シート及び電子部品パッケージの製造方法

Publications (1)

Publication Number Publication Date
WO2014084175A1 true WO2014084175A1 (fr) 2014-06-05

Family

ID=50827811

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/081672 WO2014084175A1 (fr) 2012-11-29 2013-11-25 Feuille de résine thermodurcissable et procédé de fabrication d'emballage de composant électronique

Country Status (4)

Country Link
JP (1) JP5943898B2 (fr)
SG (2) SG10201706422WA (fr)
TW (1) TWI616476B (fr)
WO (1) WO2014084175A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016069517A (ja) * 2014-09-30 2016-05-09 株式会社タムラ製作所 黒色熱硬化性樹脂組成物、並びにそれを硬化した皮膜を有するフレキシブル基板
CN107851697A (zh) * 2016-01-27 2018-03-27 欧姆龙株式会社 发光装置以及发光装置的制造方法
CN110600434A (zh) * 2014-08-29 2019-12-20 日东电工株式会社 密封用片、带隔片的密封用片、半导体装置、及半导体装置的制造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6534540B2 (ja) * 2014-09-27 2019-06-26 アイカ工業株式会社 熱硬化性シート組成物
JP6735071B2 (ja) * 2015-05-13 2020-08-05 日東電工株式会社 封止樹脂シート
JP6819139B2 (ja) * 2015-08-28 2021-01-27 昭和電工マテリアルズ株式会社 離型層付き緩衝シート用組成物及び離型層付き緩衝シート
KR102441766B1 (ko) 2017-04-28 2022-09-07 쇼와덴코머티리얼즈가부시끼가이샤 봉지용 필름 및 봉지 구조체, 및 이들의 제조 방법
JP6803498B1 (ja) * 2019-03-29 2020-12-23 三井化学東セロ株式会社 電子装置の製造方法
JP7161084B1 (ja) 2021-02-01 2022-10-25 ナガセケムテックス株式会社 電子部品実装基板の封止方法および熱硬化性シート

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000355622A (ja) * 1999-04-15 2000-12-26 Shin Etsu Chem Co Ltd エポキシ樹脂組成物並びにこのエポキシ樹脂組成物を用いた積層フィルム及び半導体装置
US6512031B1 (en) * 1999-04-15 2003-01-28 Shin-Etsu Chemical Co., Ltd. Epoxy resin composition, laminate film using the same, and semiconductor device
JP2009084563A (ja) * 2007-09-13 2009-04-23 Hitachi Chem Co Ltd 接着剤組成物、フィルム状接着剤、接着シート及び半導体装置
JP2011032434A (ja) * 2009-08-05 2011-02-17 Nitto Denko Corp 電子部品封止用シート状エポキシ樹脂組成物およびそれにより得られた電子部品装置集合体ならびに電子部品装置
JP2011246586A (ja) * 2010-05-26 2011-12-08 Hitachi Chem Co Ltd フィルム状接着剤、接着シート及び半導体装置
EP2461356A1 (fr) * 2010-12-03 2012-06-06 Shin-Etsu Chemical Co., Ltd. Matériau de moule pour plaquettes et procédé de fabrication de l'appareil semi-conducteur

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4754185B2 (ja) * 2004-05-27 2011-08-24 リンテック株式会社 半導体封止用樹脂シートおよびこれを用いた半導体装置の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000355622A (ja) * 1999-04-15 2000-12-26 Shin Etsu Chem Co Ltd エポキシ樹脂組成物並びにこのエポキシ樹脂組成物を用いた積層フィルム及び半導体装置
US6512031B1 (en) * 1999-04-15 2003-01-28 Shin-Etsu Chemical Co., Ltd. Epoxy resin composition, laminate film using the same, and semiconductor device
JP2009084563A (ja) * 2007-09-13 2009-04-23 Hitachi Chem Co Ltd 接着剤組成物、フィルム状接着剤、接着シート及び半導体装置
JP2011032434A (ja) * 2009-08-05 2011-02-17 Nitto Denko Corp 電子部品封止用シート状エポキシ樹脂組成物およびそれにより得られた電子部品装置集合体ならびに電子部品装置
JP2011246586A (ja) * 2010-05-26 2011-12-08 Hitachi Chem Co Ltd フィルム状接着剤、接着シート及び半導体装置
EP2461356A1 (fr) * 2010-12-03 2012-06-06 Shin-Etsu Chemical Co., Ltd. Matériau de moule pour plaquettes et procédé de fabrication de l'appareil semi-conducteur
JP2012119599A (ja) * 2010-12-03 2012-06-21 Shin Etsu Chem Co Ltd ウエハモールド材及び半導体装置の製造方法
TW201236116A (en) * 2010-12-03 2012-09-01 Shinetsu Chemical Co Wafer mold material and method for manufacturing semiconductor apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110600434A (zh) * 2014-08-29 2019-12-20 日东电工株式会社 密封用片、带隔片的密封用片、半导体装置、及半导体装置的制造方法
JP2016069517A (ja) * 2014-09-30 2016-05-09 株式会社タムラ製作所 黒色熱硬化性樹脂組成物、並びにそれを硬化した皮膜を有するフレキシブル基板
CN107851697A (zh) * 2016-01-27 2018-03-27 欧姆龙株式会社 发光装置以及发光装置的制造方法
EP3410499B1 (fr) * 2016-01-27 2023-05-10 Omron Corporation Dispositif électroluminescent et procédé de fabrication de dispositif électroluminescent

Also Published As

Publication number Publication date
SG10201706422WA (en) 2017-09-28
TW201428032A (zh) 2014-07-16
JP2014131016A (ja) 2014-07-10
JP5943898B2 (ja) 2016-07-05
SG11201504009UA (en) 2015-07-30
TWI616476B (zh) 2018-03-01

Similar Documents

Publication Publication Date Title
JP5961055B2 (ja) 封止樹脂シート、電子部品パッケージの製造方法及び電子部品パッケージ
JP5943898B2 (ja) 熱硬化性樹脂シート及び電子部品パッケージの製造方法
WO2015019817A1 (fr) Procédé permettant de produire un boîtier de semi-conducteur
JP5837381B2 (ja) 半導体装置の製造方法
TWI606925B (zh) Thermosetting sealing resin sheet and manufacturing method of electronic part package
JP6484061B2 (ja) 電子部品パッケージの製造方法
WO2015019816A1 (fr) Procédé de fabrication de boîtier de composant à semi-conducteur
WO2015076088A1 (fr) Feuille de scellage pourvue de séparateurs sur ses deux surfaces, et procédé de fabrication d'un dispositif à semi-conducteur
WO2014196296A1 (fr) Procédé de fabrication d'un dispositif à semi-conducteurs
WO2015060106A1 (fr) Procédé de fabrication de boîtier de semi-conducteur
TWI624914B (zh) Resin sheet for electronic component sealing, resin sealed semiconductor device, and method for manufacturing resin sealed semiconductor device
JP6041933B2 (ja) 熱硬化性樹脂シート及び電子部品パッケージの製造方法
WO2016031579A1 (fr) Procédé de fabrication d'un dispositif à semi-conducteur, et feuille d'étanchéité
WO2014083974A1 (fr) Procédé de fabrication de dispositif à semiconducteur
JP2015126129A (ja) 電子部品パッケージの製造方法
WO2015053081A1 (fr) Procédé de fabrication d'un dispositif semi-conducteur
JP2015126131A (ja) 電子部品パッケージの製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13858162

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13858162

Country of ref document: EP

Kind code of ref document: A1