WO2014196296A1 - Procédé de fabrication d'un dispositif à semi-conducteurs - Google Patents

Procédé de fabrication d'un dispositif à semi-conducteurs Download PDF

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Publication number
WO2014196296A1
WO2014196296A1 PCT/JP2014/062144 JP2014062144W WO2014196296A1 WO 2014196296 A1 WO2014196296 A1 WO 2014196296A1 JP 2014062144 W JP2014062144 W JP 2014062144W WO 2014196296 A1 WO2014196296 A1 WO 2014196296A1
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sheet
temporary fixing
wiring
sealing sheet
sealing
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PCT/JP2014/062144
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English (en)
Japanese (ja)
Inventor
豊田　英志
亀山　工次郎
松村　健
小田　高司
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日東電工株式会社
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Publication of WO2014196296A1 publication Critical patent/WO2014196296A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D303/00—Compounds containing three-membered rings having one oxygen atom as the only ring hetero atom
    • C07D303/02—Compounds containing oxirane rings
    • C07D303/12—Compounds containing oxirane rings with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms
    • C07D303/18—Compounds containing oxirane rings with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms by etherified hydroxyl radicals
    • C07D303/20—Ethers with hydroxy compounds containing no oxirane rings
    • C07D303/24—Ethers with hydroxy compounds containing no oxirane rings with polyhydroxy compounds
    • C07D303/27—Ethers with hydroxy compounds containing no oxirane rings with polyhydroxy compounds having all hydroxyl radicals etherified with oxirane containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/81005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device.
  • semiconductor elements composed of various semiconductor materials (hereinafter also simply referred to as “elements”) such as ICs using silicon semiconductors and organic EL elements using organic semiconductors are usually provided on the wafer substrate surface. Are repeatedly formed in a matrix and then divided into individual semiconductor chips (also referred to as bare chips) by dicing.
  • a method for manufacturing a semiconductor device includes: Step A for preparing a laminate in which at least a temporary fixing sheet and a wiring sheet on which a rewiring layer is formed are laminated, A step B of flip-chip mounting a semiconductor chip on the wiring sheet of the laminate; Step C for preparing a sealing sheet obtained by plastic working a kneaded product obtained by kneading an epoxy resin, a curing agent, and an inorganic filler, Placing the sealing sheet on the surface on which the semiconductor chip is exposed, and embedding the semiconductor chip in the sealing sheet, Step E for thermosetting the sealing sheet, and Process F for peeling off the temporary fixing sheet from the wiring sheet It is characterized by comprising.
  • the semiconductor chip is flip-chip mounted on the wiring sheet.
  • a sealing sheet is arranged on the surface on which the semiconductor chip is exposed, and the semiconductor chip is embedded in the sealing sheet.
  • the sealing sheet is thermoset. Therefore, electrical bonding (flip chip mounting) between the semiconductor chip and the wiring sheet is completed before the thermosetting of the sealing sheet. Therefore, the positional deviation between the wiring sheet and the semiconductor chip due to the thermosetting of the sealing sheet cannot occur. As a result, poor connection between the wiring sheet and the semiconductor chip can be suppressed.
  • seat for sealing obtained by plastically processing the kneaded material obtained by kneading
  • the blending ratio of the inorganic filler in the sealing sheet is 70 to 90% by volume in the total composition constituting the sealing sheet.
  • the sealing sheet contains a thermoplastic elastomer made of a polymer having a weight average molecular weight of 10,000 or more containing either a styrene skeleton or a butadiene skeleton.
  • the sealing sheet contains a thermoplastic elastomer composed of a polymer having a molecular weight of 10,000 or more and containing either a styrene skeleton or a butadiene skeleton, the warpage is excellent.
  • the epoxy resin is preferably an epoxy resin represented by the following formula (1).
  • R 1 to R 4 are the same or different and each represents a methyl group or a hydrogen atom, and X represents —CH 2 —, —O—, or —S—).
  • the epoxy resin shown by the said General formula (1) since the epoxy resin shown by the said General formula (1) is included, it has a softness
  • the laminate prepared in the step A is a laminate in which a support, a temporary fixing sheet, and a wiring sheet are laminated in this order
  • the step F may be a step of peeling the temporary fixing sheet and the support from the wiring sheet.
  • the wiring sheet is fixed on the support via the temporary fixing sheet. Since the wiring sheet is usually flexible, if a support is used, it is easy to flip-chip mount the semiconductor chip on the wiring sheet.
  • the temporary fixing sheet has a thermally expandable pressure-sensitive adhesive layer on a surface in contact with the support.
  • the foaming agent contained in the thermally expandable pressure-sensitive adhesive layer is foamed.
  • the adhesive force between the temporary fixing sheet and the support can be reduced.
  • the support can be easily peeled from the temporary fixing sheet.
  • seat for temporary fixing can be peeled from a wiring sheet by peeling peeling.
  • the manufacturing method of the semiconductor device is as follows: Step A for preparing a laminate in which at least a temporary fixing sheet and a wiring sheet on which a rewiring layer is formed are laminated, A step B of flip-chip mounting a semiconductor chip on the wiring sheet of the laminate; Step C for preparing a sealing sheet obtained by plastic working a kneaded product obtained by kneading an epoxy resin, a curing agent, and an inorganic filler, Placing the sealing sheet on the surface on which the semiconductor chip is exposed, and embedding the semiconductor chip in the sealing sheet, Step E for thermosetting the sealing sheet, and Process F for peeling off the temporary fixing sheet from the wiring sheet It is characterized by comprising.
  • the laminated body is a laminated body in which the support, the temporary fixing sheet, and the wiring sheet are laminated in this order will be described.
  • FIG. 1 is a partially enlarged view showing how the semiconductor chip is mounted on the rewiring sheet.
  • a laminate 10 in which a support 1, a temporary fixing sheet 5, and a wiring sheet 2 are laminated in this order is prepared (steps). A).
  • the support 1 preferably has a certain strength or more. Although it does not specifically limit as the support body 1, Compound foils, such as metal foil, such as Ni foil and Al foil, a metal plate, a glass plate, a silicon wafer, a SiC wafer, and a GaAs wafer, etc. are mentioned. Examples of the support 1 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, and polymethylpentene.
  • Polyolefin such as ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, Polyethylene such as ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamid , Polyphenyl sulphates id, aramid (paper), can be glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, also possible to use paper or the like. Of these, metal stays are preferred in that they have little dimensional change and can be rolled up.
  • the support 1 may be used alone or in combination of two or more.
  • the thickness of the support is not particularly limited, but is usually about 10 ⁇ m to 20 mm, for example.
  • Temporal fixing sheet As the temporary fixing sheet 5, a configuration having a thermally expandable pressure-sensitive adhesive layer or a radiation curable pressure-sensitive adhesive layer can be employed.
  • a radiation curable pressure-sensitive adhesive layer As the radiation curable pressure-sensitive adhesive layer, a conventionally known radiation curable pressure-sensitive adhesive (for example, an ultraviolet curable pressure-sensitive adhesive) can be employed. This embodiment demonstrates the case where the sheet
  • the thermally expandable pressure-sensitive adhesive layer can be formed of a pressure-sensitive adhesive composition containing a polymer component and a foaming agent.
  • a polymer component particularly the base polymer
  • an acrylic polymer sometimes referred to as “acrylic polymer A”
  • acrylic polymer A examples include those using (meth) acrylic acid ester as a main monomer component.
  • Examples of the (meth) acrylic acid ester include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, sec-butyl ester, t-butyl ester, Pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, Linear or branched alkyl ester having 1 to 30 carbon atoms, particularly 4 to 18 carbon atoms, of an alkyl group such as hexadecyl ester, oct
  • the acrylic polymer A corresponds to other monomer components that can be copolymerized with the (meth) acrylic acid ester, if necessary, for the purpose of modifying cohesive strength, heat resistance, crosslinkability, and the like. Units may be included.
  • monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and carboxyethyl acrylate; acid anhydrides such as maleic anhydride and itaconic anhydride Group-containing monomers; hydroxyl group-containing monomers such as hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, and hydroxybutyl (meth) acrylate; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, (N-substituted or unsubstituted) amide monomers such as N-butyl (meth) acrylamide, N-
  • (Substituted or unsubstituted) amino group-containing monomers (meth) acrylic acid alkoxyalkyl monomers such as methoxyethyl (meth) acrylate and ethoxyethyl (meth) acrylate; N-vinylpyrrolidone, N -Methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N -Monomers having a nitrogen atom-containing ring such as vinylcaprolactam; N-vinylcarboxylic amides; Monomers containing sulfonic acid groups such as styrene sulfonic acid, allyl sulfonic acid, (meth) acryl
  • the acrylic polymer A can be obtained by polymerizing a single monomer or a mixture of two or more monomers.
  • the polymerization may be performed by any method such as solution polymerization (for example, radical polymerization, anionic polymerization, cationic polymerization), emulsion polymerization, bulk polymerization, suspension polymerization, photopolymerization (for example, ultraviolet (UV) polymerization). it can.
  • the weight average molecular weight of the acrylic polymer A is not particularly limited, but is preferably 350,000 to 1,000,000, more preferably about 450,000 to 800,000.
  • an external cross-linking agent can be appropriately used for the heat-expandable pressure-sensitive adhesive in order to adjust the adhesive force.
  • the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them.
  • a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them.
  • the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive.
  • the amount of the external crosslinking agent used is generally 20 parts by weight or less (preferably 0.1 to 10 parts by weight) with respect to 100 parts by weight of the base polymer.
  • the heat-expandable pressure-sensitive adhesive layer contains a foaming agent for imparting heat-expandability as described above. Therefore, when peeling the support 1 from the temporary fixing sheet 5, the thermally expandable pressure-sensitive adhesive layer is at least partially heated and contained in the heated thermally expandable pressure-sensitive adhesive layer. By expanding and / or expanding the foaming agent, the heat-expandable pressure-sensitive adhesive layer expands at least partially, and at least partial expansion of the heat-expandable pressure-sensitive adhesive layer causes a pressure-sensitive adhesive surface corresponding to the expanded portion.
  • the support 1 can be peeled from the sheet 5.
  • the temporary fixing sheet 5 can be peeled from the wiring sheet 2 by peel peeling after the support 1 is peeled off.
  • the foaming agent used in the thermally expandable pressure-sensitive adhesive layer is not particularly limited, and can be appropriately selected from known foaming agents.
  • a foaming agent can be used individually or in combination of 2 or more types.
  • thermally expandable microspheres can be suitably used.
  • the heat-expandable microsphere is not particularly limited, and can be appropriately selected from known heat-expandable microspheres (such as various inorganic heat-expandable microspheres and organic heat-expandable microspheres).
  • a microencapsulated foaming agent can be suitably used from the viewpoint of easy mixing operation.
  • thermally expandable microspheres include microspheres in which substances such as isobutane, propane, and pentane that are easily gasified and expanded by heating are encapsulated in an elastic shell.
  • the shell is often formed of a hot-melt material or a material that is destroyed by thermal expansion.
  • Examples of the substance forming the shell include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.
  • Thermally expandable microspheres can be produced by a conventional method such as a coacervation method or an interfacial polymerization method.
  • Examples of the thermally expandable microspheres include, for example, a series of “Matsumoto Microsphere F30” and “Matsumoto Microsphere F301D” (trade names “Matsumoto Microsphere F30”, manufactured by Matsumoto Yushi Seiyaku Co., Ltd.).
  • Commercially available products such as “051DU”, “053DU”, “551DU”, “551-20DU”, and “551-80DU” can be used.
  • the particle size (average particle diameter) of the thermally expandable microspheres can be appropriately selected according to the thickness of the thermally expandable pressure-sensitive adhesive layer. .
  • the average particle diameter of the heat-expandable microspheres can be selected from a range of, for example, 100 ⁇ m or less (preferably 80 ⁇ m or less, more preferably 1 ⁇ m to 50 ⁇ m, particularly 1 ⁇ m to 30 ⁇ m). Note that the adjustment of the particle size of the thermally expandable microspheres may be performed in the process of generating the thermally expandable microspheres, or may be performed by means such as classification after the generation. It is preferable that the thermally expandable microspheres have the same particle size.
  • a foaming agent other than the thermally expandable microsphere can also be used.
  • various foaming agents such as various inorganic foaming agents and organic foaming agents can be appropriately selected and used.
  • the inorganic foaming agent include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride, various azides and the like.
  • organic foaming agents include, for example, water; chlorofluorinated alkane compounds such as trichloromonofluoromethane and dichloromonofluoromethane; azobisisobutyronitrile, azodicarbonamide, and barium azodi.
  • Azo compounds such as carboxylates; hydrazine compounds such as paratoluenesulfonyl hydrazide, diphenylsulfone-3,3'-disulfonyl hydrazide, 4,4'-oxybis (benzenesulfonyl hydrazide), allyl bis (sulfonyl hydrazide); p- Semicarbazide compounds such as toluylenesulfonyl semicarbazide and 4,4′-oxybis (benzenesulfonyl semicarbazide); Triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole; N, N′-dinitrosope Data methylene terrorism lamin, N, N'-dimethyl -N, N'N-nitroso compounds such as dinitrosoterephthalamide, and the like.
  • the volume expansion coefficient is 5 times or more, especially 7 times or more, particularly 10 times or more.
  • a foaming agent having an appropriate strength that does not burst is preferred.
  • the amount of foaming agent can be set as appropriate depending on the expansion ratio of the thermally expandable pressure-sensitive adhesive layer and the ability to lower the adhesive strength, but generally a thermally expandable pressure-sensitive adhesive layer is formed.
  • the amount is, for example, 1 part by weight to 150 parts by weight (preferably 10 parts by weight to 130 parts by weight, more preferably 25 parts by weight to 100 parts by weight) with respect to 100 parts by weight of the base polymer.
  • a foaming agent having a foaming start temperature (thermal expansion start temperature) (T 0 ) in the range of 120 ° C. to 220 ° C. can be suitably used, and a more preferable foaming start temperature is 130 ° C. It is in the range of ⁇ 200 ° C.
  • T 0 foaming start temperature
  • the foaming start temperature of the foaming agent By setting the foaming start temperature of the foaming agent to 120 ° C. or higher, foaming of the foaming agent at a stage where it is not desired to be peeled off can be suppressed, and handleability and productivity can be ensured.
  • the foaming start temperature of the foaming agent to 220 ° C. or lower, the support 1 can be easily peeled in the peeling step (step F).
  • the foaming starting temperature (T 0) of the blowing agent corresponding to the foaming starting temperature of the heat-expandable pressure-sensitive adhesive layer (T 0).
  • the foaming agent that is, a method of thermally expanding the thermally expandable pressure-sensitive adhesive layer
  • it can be appropriately selected from known heat foaming methods.
  • the heat-expandable pressure-sensitive adhesive layer has an elastic modulus of 23 ° C. in a form not containing a foaming agent from the viewpoint of a balance between moderate adhesive force before heat treatment and lowering of adhesive force after heat treatment. It is preferably 5 ⁇ 10 4 Pa to 1 ⁇ 10 6 Pa at ⁇ 150 ° C., more preferably 5 ⁇ 10 4 Pa to 8 ⁇ 10 5 Pa, and particularly 5 ⁇ 10 4 Pa to 5 ⁇ 10 5 Pa. It is preferable that When the elastic modulus (temperature: 23 ° C. to 150 ° C.) of the thermally expandable pressure-sensitive adhesive layer containing no foaming agent is 5 ⁇ 10 4 Pa or more, the thermal expandability is inferior and the peelability is decreased.
  • the initial adhesiveness can be improved by setting the elastic modulus (temperature: 23 ° C. to 150 ° C.) of the thermally expandable pressure-sensitive adhesive layer in a form not containing a foaming agent to 1 ⁇ 10 6 Pa or less. .
  • the thermally expansible adhesive layer of the form which does not contain a foaming agent is corresponded to the adhesive layer formed with the adhesive (The foaming agent is not contained). Therefore, the elastic modulus of the thermally expandable pressure-sensitive adhesive layer in a form not containing a foaming agent can be measured using a pressure-sensitive adhesive (no foaming agent is included).
  • the heat-expandable pressure-sensitive adhesive layer includes a pressure-sensitive adhesive capable of forming a pressure-sensitive adhesive layer having an elastic modulus at 23 ° C. to 150 ° C. of 5 ⁇ 10 4 Pa to 1 ⁇ 10 6 Pa, and a thermal expansion containing a foaming agent. It can be formed with an adhesive.
  • the modulus of elasticity of the thermally expandable pressure-sensitive adhesive layer in the form not containing the foaming agent is the heat-expandable pressure-sensitive adhesive layer in the form in which the foaming agent is not added (that is, the pressure-sensitive adhesive layer by the pressure-sensitive adhesive not containing the foaming agent).
  • a rheometric dynamic viscoelasticity measuring device “ARES” sample thickness: about 1.5 mm, ⁇ 7.9 mm parallel plate jig, in shear mode , Frequency: 1 Hz, rate of temperature increase: 5 ° C./min, strain: 0.1% (23 ° C.), 0.3% (150 ° C.) measured at 23 ° C. and 150 ° C. shear storage elasticity obtained The value of the rate G ′ was used.
  • the elastic modulus of the thermally expandable pressure-sensitive adhesive layer can be controlled by adjusting the type of the base polymer of the pressure-sensitive adhesive, the crosslinking agent, the additive, and the like.
  • the thickness of the heat-expandable pressure-sensitive adhesive layer is not particularly limited, and can be appropriately selected depending on the reduction in adhesive strength, and is, for example, about 5 ⁇ m to 300 ⁇ m (preferably 20 ⁇ m to 150 ⁇ m). However, when heat-expandable microspheres are used as the foaming agent, the thickness of the heat-expandable pressure-sensitive adhesive layer is preferably thicker than the maximum particle size of the heat-expandable microspheres contained. When the thickness of the heat-expandable pressure-sensitive adhesive layer is too thin, the surface smoothness is impaired by the unevenness of the heat-expandable microspheres, and the adhesiveness before heating (unfoamed state) is lowered.
  • the degree of deformation of the heat-expandable pressure-sensitive adhesive layer by heat treatment is small, and the adhesive force is not easily lowered.
  • the thickness of the heat-expandable pressure-sensitive adhesive layer is too thick, cohesive failure tends to occur in the heat-expandable pressure-sensitive adhesive layer after expansion or foaming by heat treatment, and adhesive residue may be generated.
  • the thermally expandable pressure-sensitive adhesive layer may be either a single layer or multiple layers.
  • the heat-expandable pressure-sensitive adhesive layer has various additives (for example, a colorant, a thickener, a bulking agent, a filler, a tackifier, a plasticizer, an anti-aging agent, an antioxidant, and a surfactant. Agent, cross-linking agent, etc.).
  • additives for example, a colorant, a thickener, a bulking agent, a filler, a tackifier, a plasticizer, an anti-aging agent, an antioxidant, and a surfactant. Agent, cross-linking agent, etc.).
  • the temporary fixing sheet 5 preferably has at least a thermally expandable pressure-sensitive adhesive layer and a pressure-sensitive adhesive layer. In this case, it is preferable to laminate so that the heat-expandable pressure-sensitive adhesive layer is on the support 1 side and the pressure-sensitive adhesive layer is on the wiring sheet 2 side.
  • the peeling step (step F) by laminating in this way first, the support 1 is peeled from the temporary fixing sheet 5 by thermal foaming, and then the temporary fixing sheet 5 is peeled from the wiring sheet 2 by peel peeling. Can be peeled off. Thereby, the support body 1 and the temporary fixing sheet 5 can be peeled from the wiring sheet 2.
  • the temporary fixing sheet 5 is, for example, a sheet-like adhesive mixed with a pressure-sensitive adhesive (pressure-sensitive adhesive), a foaming agent (such as thermally expandable microspheres), and a solvent or other additives as necessary. It can be formed using conventional methods for forming layers. Specifically, for example, a pressure-sensitive adhesive, a foaming agent (such as thermally expandable microspheres), and a mixture containing a solvent and other additives as necessary are applied onto an appropriate separator (such as release paper). After forming the coating film, it can be obtained by drying the coating film under predetermined conditions and transferring (transferring) it onto the support 1. Further, after the mixture is directly applied to the support 1 to form a coating film, the coating film may be dried under predetermined conditions.
  • a pressure-sensitive adhesive pressure-sensitive adhesive
  • a foaming agent such as thermally expandable microspheres
  • a solvent or other additives as necessary. It can be formed using conventional methods for forming layers. Specifically, for example, a pressure-sensitive adhesive, a
  • the wiring sheet 2 is obtained by forming it on the temporary fixing sheet 5.
  • a method of forming the wiring sheet 2 on the temporary fixing sheet 5 conventionally known circuit board and interposer manufacturing techniques such as a semi-additive method and a subtractive method can be used. Thereby, the wiring sheet 2 in which the rewiring layer was formed is obtained. Specifically, for example, a method described in JP 2010-141126 A can be employed. In the present embodiment, the wiring sheet 2 is formed on the temporary fixing sheet 5 formed on the support 1. Therefore, it is more excellent in that the dimensional stability is improved during the manufacturing process and the handleability of the thin printed circuit board is improved.
  • the laminated body 10 may be in a state of being wound in a roll shape, or may be in a strip shape that is not wound in a roll shape.
  • the support 1 uses a metal foil that can be wound.
  • the temporary fixing sheet 5 and the wiring sheet 2 are usually formed in a flexible state to the extent that they can be wound.
  • the wiring sheet 2 may be continuously laminated on the temporary fixing sheet 5, or a plurality of wiring sheets 2 may be laminated on the temporary fixing sheet 5 at a predetermined interval.
  • FIG. 2 is a plan view showing an example in which a plurality of wiring sheets are laminated on the temporary fixing sheet at a predetermined interval.
  • FIG. 3 is a plan view showing another example in which a plurality of wiring sheets are laminated at a predetermined interval on a temporary fixing sheet.
  • a circular wiring sheet 2 in a plurality of plan views is laminated on a temporary fixing sheet 5 at a predetermined interval.
  • a rectangular wiring sheet 2 in a plurality of plan views is laminated on a temporary fixing sheet 5 at a predetermined interval.
  • step A the semiconductor chip 3 is flip-chip mounted on the wiring sheet 2 of the laminate 10 as shown in FIG. 4 (step B). Specifically, as shown in FIG. 5, the connection conductor portion 21 formed on the wiring sheet 2 and the electrode 31 formed on the semiconductor chip 3 are connected, and the semiconductor chip 3 is formed on the wiring sheet 2.
  • the flip chip mounting for flip chip mounting, for example, a conventionally known flip chip bonder can be used.
  • a sealing sheet 20 obtained by plastic working a kneaded product obtained by kneading an epoxy resin, a curing agent, and an inorganic filler is prepared (step C).
  • the epoxy resin is not particularly limited.
  • Various epoxy resins such as resin and trishydroxyphenylmethane type epoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
  • an epoxy resin represented by the following general formula (1) is preferable.
  • the flexibility is excellent. Therefore, it is further excellent in adhesiveness with a wiring sheet or a semiconductor chip.
  • R 1 to R 4 are the same or different and each represents a methyl group or a hydrogen atom, and X represents —CH 2 —, —O—, or —S—).
  • R 1 to R 4 in the general formula (1) represent a methyl group or a hydrogen atom substituted on the benzene ring, and preferably all of R 1 to R 4 are a methyl group or a hydrogen atom.
  • epoxy resin examples include bisphenol F type epoxy resins represented by the following chemical formulas (2) to (4), for example, 4,4′-thiobisphenol type epoxy resins represented by the following chemical formulas (5) to (7). Examples thereof include 4,4′-oxybisphenol type epoxy resins represented by the following chemical formulas (8) to (10).
  • a bisphenol F type epoxy resin represented by the following chemical formula (2) a 4,4′-thiobisphenol type epoxy resin represented by the following chemical formula (5)
  • a 4,4′-oxybisphenol type epoxy resin represented by the chemical formula (8) is mentioned, and in view of tackless, a bisphenol F type epoxy resin represented by the following chemical formula (2) is more preferred.
  • the epoxy resin may be used alone or in combination.
  • the epoxy equivalent of the epoxy resin is, for example, 90 to 800 g / eq, preferably 100 to 500 g / eq.
  • the softening point of the epoxy resin is, for example, 30 to 100 ° C., preferably 40 to 90 ° C.
  • the content ratio of the epoxy resin is, for example, 1 to 50 parts by weight with respect to 100 parts by weight of the kneaded material, preferably 3 to 20 parts by weight, more preferably considering the flexibility of the sealing sheet, 4 to 8 parts by weight.
  • the curing agent is a curing agent for the epoxy resin and is not particularly limited, and examples thereof include a phenol resin, an acid anhydride compound, and an amine compound.
  • phenol resin examples include a phenol novolak resin, a phenol aralkyl resin, a biphenyl aralkyl resin (a phenol resin having a biphenyl aralkyl skeleton), a dicyclopentadiene type phenol resin, a cresol novolak resin, and a resole resin.
  • acid anhydride compounds examples include phthalic anhydride, maleic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyl nadic acid anhydride, pyromellitic anhydride, dodecenyl succinic anhydride, dichloromethane.
  • Succinic acid anhydride, benzophenone tetracarboxylic acid anhydride, chlorendic acid anhydride, etc. are mentioned.
  • amine compound examples include ethylenediamine, propylenediamine, diethylenetriamine, triethylenetetramine, amine adducts thereof, metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone.
  • the curing agent may be used alone or in combination.
  • a phenol resin is used, and further considering the balance between the strength of the sealing sheet after curing and the curing reactivity, Preferably, a biphenyl aralkyl resin is used.
  • the mixing ratio of the curing agent is, for example, 1 to 20 parts by weight, preferably 2 to 10 parts by weight with respect to 100 parts by weight of the kneaded product, and is, for example, 30 parts with respect to 100 parts by weight of the epoxy resin. It is ⁇ 130 parts by weight, preferably 40 to 120 parts by weight.
  • the phenol resin has, for example, 0.5 to 2 equivalents, preferably 0.5 to 2 equivalents of hydroxyl groups of the phenol resin with respect to 1 equivalent of the epoxy group of the epoxy resin described above. , 0.8 to 1.2 equivalents.
  • the kneaded material contains a curing accelerator together with the curing agent.
  • curing accelerator examples include organic phosphorus compounds such as triphenylphosphine and tetraphenylphosphonium / tetraphenylborate, and imidazole compounds.
  • the curing accelerator may be used alone or in combination.
  • imidazole compounds are exemplified, and 2-phenyl-4,5-dihydroxymethylimidazole is more preferred.
  • the content of the curing accelerator is, for example, 0.01 to 5 parts by weight, preferably 0.05 to 3 parts by weight with respect to 100 parts by weight of the kneaded product.
  • the content of the curing accelerator is, for example, 0.5 to 10 parts by weight, preferably 1 to 5 parts by weight with respect to 100 parts by weight of the curing agent.
  • the inorganic filler is not particularly limited and includes known fillers.
  • quartz glass, talc, silica for example, fused silica, crystalline silica, etc.
  • alumina aluminum nitride, silicon nitride
  • calcium carbonate for example, heavy calcium carbonate, light calcium carbonate, white glaze etc.
  • powders such as titanium.
  • the filler may be used alone or in combination.
  • silica powder is preferably used, and more preferably fused silica powder, in view of reduction of the linear expansion coefficient of the sealing sheet 20 after curing.
  • fused silica powder examples include spherical fused silica powder and pulverized fused silica powder. In consideration of the fluidity of the kneaded material, preferably, fused spherical silica powder is used.
  • the average particle diameter of the spherical fused silica powder is, for example, 0.1 to 40 ⁇ m, preferably 0.1 to 30 ⁇ m, and more preferably 0.3 to 15 ⁇ m.
  • the average particle diameter can be measured by, for example, a laser diffraction / confusion type particle size distribution measuring apparatus.
  • the blending ratio of the inorganic filler in the sealing sheet 20 is preferably 70 to 90% by volume, more preferably 75 to 85% by volume in the total composition constituting the sealing sheet 20. preferable. By setting the blending ratio of the inorganic filler within the numerical range, it becomes easy to realize low warpage, suppression of resin protrusion, and high reliability.
  • the blending ratio of the filler is, for example, 1000 to 3000 parts by weight, preferably 1300 to 2500 parts by weight with respect to 100 parts by weight of the epoxy resin.
  • a flexibility imparting agent can be added to the kneaded product in consideration of improvement in flexibility of the sealing sheet 20.
  • the flexibility-imparting agent is not particularly limited as long as it imparts flexibility to the sealing sheet 20.
  • various acrylic copolymers such as polyacrylic acid ester, for example, polystyrene-poly Thermoplastic elastomers having a styrene skeleton such as isobutylene copolymer and styrene acrylate copolymer, for example, thermoplastic elastomers having a butadiene skeleton such as butadiene rubber and styrene-butadiene rubber (SBR), ethylene-vinyl acetate copolymer ( EVA), rubbery polymers such as isoprene rubber and acrylonitrile rubber.
  • SBR butadiene rubber and styrene-butadiene rubber
  • EVA ethylene-vinyl acetate copolymer
  • rubbery polymers such as isoprene rubber and acrylonitrile rubber.
  • thermoplastic elastomer made of a polymer having a weight average molecular weight of 10,000 or more and containing either a styrene skeleton or a butadiene skeleton is preferred from the viewpoint of low warpage.
  • the weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.
  • the flexibility-imparting agent may be used alone or in combination.
  • an elastomer having a styrene skeleton is preferable, and a polystyrene-polyisobutylene copolymer is more preferable.
  • the content ratio of the flexibility imparting agent is, for example, less than 30 parts by weight with respect to 100 parts by weight of the kneaded material, preferably less than 10 parts by weight, and more preferably 5 parts by weight in consideration of adhesiveness and heat resistance. Less than part.
  • the kneaded product includes an epoxy resin other than the above-described epoxy resin (hereinafter referred to as other epoxy resin), and, if necessary, a flame retardant, a pigment such as carbon black, and the like.
  • Known additives can be added at an appropriate ratio.
  • the content rate of other epoxy resin is less than 30 weight part with respect to 100 weight part of total amounts of said epoxy resin and other epoxy resin, for example, the sheet
  • the amount is preferably less than 20 parts by weight.
  • the method of melt kneading is not particularly limited, and examples thereof include a method of melt kneading with a known kneader such as a mixing roll, a pressure kneader, or an extruder.
  • a known kneader such as a mixing roll, a pressure kneader, or an extruder.
  • the kneading conditions are not particularly limited as long as the temperature is equal to or higher than the softening point of each component described above.
  • the temperature is preferably 60 to 120 ° C.
  • the time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.
  • Such a kneaded material is prepared as a sealing sheet 20 by being plastically processed.
  • the encapsulating sheet 20 is prepared by plastic working in a high-temperature state without cooling the kneaded material after melt-kneading.
  • Such a plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T-die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a co-extrusion method, and a calendar molding method.
  • the plastic working temperature is not particularly limited as long as it is equal to or higher than the softening point of each component described above, but considering the thermosetting property and workability of the epoxy resin, for example, 40 to 150 ° C., preferably 50 to 140 ° C. More preferably, the temperature is 60 to 120 ° C.
  • the sealing sheet 20 is prepared.
  • the thickness of the sealing sheet 20 is, for example, 100 to 1500 ⁇ m, preferably 300 to 1200 ⁇ m.
  • the sealing sheet 20 is formed by plastic processing of the kneaded material without applying a varnish containing an epoxy resin or an inorganic filler onto the film.
  • the blending ratio of the inorganic filler can be increased, and the performance of the sealing sheet can be sufficiently improved.
  • the sealing sheet 20 has sufficient flexibility without blending a large amount of a flexibility imparting agent that hinders heat resistance, the adhesiveness and heat resistance can be improved. .
  • the sealing sheet 20 can increase the blending ratio of the inorganic filler, and can improve the adhesion and heat resistance.
  • the sealing sheet 20 is obtained by plastic working the kneaded product, a sealing film having a good film quality can be obtained even if the blending ratio of the inorganic filler is increased. Therefore, the compounding ratio of the inorganic filler can be increased, and the linear expansion coefficient after thermosetting of the sealing sheet can be lowered. As a result, for example, warpage of the semiconductor device due to the linear expansion coefficient of the sealing sheet after thermosetting can be suppressed.
  • the sealing sheet 20 is disposed on the surface on which the semiconductor chip 3 is exposed, and the semiconductor chip 3 is embedded in the sealing sheet 20 as shown in FIG. (Process D).
  • the method for embedding the semiconductor chip 3 in the sealing sheet 20 is not particularly limited, and can be performed by a known method such as a heat press or a laminator.
  • a heat press or a laminator As hot press conditions, the temperature is, for example, 40 to 100 ° C., preferably 50 to 90 ° C., the pressure is, for example, 0.1 to 10 MPa, preferably 0.5 to 8 MPa, and the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes.
  • it is preferable to press under reduced pressure conditions for example, 0.1 to 5 kPa).
  • the sealing sheet 20 is thermally cured (step E).
  • the conditions for the thermosetting treatment are set so that the temporary fixing sheet 5 does not peel off due to the heat of the thermosetting treatment.
  • the heating temperature at the time of thermosetting of the sealing sheet 20 is set to be 10 ° C. or more lower than the heating temperature at the time of peeling the temporary fixing sheet 5 described later. Thereby, it can prevent more reliably that the sheet
  • the heating temperature is preferably 100 ° C. or higher, more preferably 120 ° C. or higher.
  • the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower.
  • the heating time is preferably 10 minutes or more, more preferably 30 minutes or more.
  • the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less. Moreover, you may pressurize as needed, Preferably it is 0.1 Mpa or more, More preferably, it is 0.5 Mpa or more.
  • the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.
  • the support 1 and the temporary fixing sheet 5 are peeled from the wiring sheet 2 (step F). Specifically, first, as shown in FIG. 8, the support 1 is peeled from the temporary fixing sheet 5. Peeling of the support 1 from the temporary fixing sheet 5 is performed by heating the thermally expandable pressure-sensitive adhesive layer of the temporary fixing sheet 5 to reduce the adhesive force between the support 1 and the temporary fixing sheet 5. .
  • the condition for the peeling treatment is set higher than the heating temperature at the time of thermosetting.
  • the heating temperature is preferably 110 ° C. or higher, more preferably 130 ° C. or higher.
  • the upper limit of the heating temperature is preferably 220 ° C. or lower, more preferably 200 ° C. or lower.
  • the heating time is preferably 0.2 minutes or more, more preferably 0.5 minutes or more.
  • the upper limit of the heating time is preferably 5 minutes or less, more preferably 3 minutes or less.
  • the temporary fixing sheet 5 After peeling the support 1 from the temporary fixing sheet 5, the temporary fixing sheet 5 is peeled off from the wiring sheet 2 as shown in FIG. Peel peeling can be performed at room temperature, for example. In addition, after peeling the support body 1 and the temporary fixing sheet 5 from the wiring sheet 2, the surface of the wiring sheet 2 may be cleaned by wet cleaning, plasma cleaning, or the like, if necessary.
  • bump formation process Next, bumps 4 are formed at predetermined locations on the wiring sheet 2 as necessary (see FIG. 10).
  • the semiconductor device manufacturing method according to the present embodiment has been described above.
  • the temporary fixing sheet 5 is peeled from the wiring sheet 2 after the support 1 is peeled from the temporary fixing sheet 5 has been described.
  • the present invention is not limited to this example, and the laminate of the support 1 and the temporary fixing sheet 5 may be peeled from the wiring sheet 2.
  • the temporary fixing sheet 5 is configured to have a thermally expandable pressure-sensitive adhesive layer on the adhesive surface with the wiring sheet 2, and the adhesive force between the wiring sheet 2 and the temporary fixing sheet 5 is reduced by heating to be peeled off. do it.
  • the laminated body 10 in which the support body 1, the temporary fixing sheet 5, and the wiring sheet 2 are laminated in this order has been described.
  • the laminated body of the present invention is not limited to this example as long as the temporary fixing sheet and the wiring sheet are laminated at least.
  • wiring is performed on a single temporary fixing sheet that is not supported by the support.
  • a sheet may be formed.
  • the semiconductor chip since the semiconductor chip is embedded in the sealing sheet after the semiconductor chip is flip-chip mounted on the wiring sheet, the effect of suppressing poor connection between the wiring sheet and the semiconductor chip without a support is It is because it is obtained.
  • the laminated body of this invention may have layers other than a support body, the sheet
  • the manufacturing method of the semiconductor device in this invention is not limited to the example mentioned above, In the range of the summary of this invention, it can change suitably. .
  • Example 1 ⁇ Creation of sealing sheet> In the formulation shown in Table 1 (unit:% by weight), each component was blended and melt kneaded at 100 ° C. for 10 minutes using a twin-screw kneader to prepare a kneaded product.
  • the obtained kneaded material was formed into a sheet shape by a flat plate press to obtain a sealing sheet having a size of 20 cm square and a thickness of 400 ⁇ m.
  • Epoxy resin 1 YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq. Softening point 80 ° C.)
  • Phenol resin 1 MEH-7851-SS manufactured by Meiwa Kasei Co., Ltd.
  • Thermoplastic resin 1 SIBSTER 072T manufactured by Kaneka Corporation (styrene-isobutylene-styrene block copolymer, weight average molecular weight: 73,000)
  • Inorganic filler 1 FB-9454FC (fused spherical silica, average particle size 20 ⁇ m) manufactured by Denki Kagaku Kogyo Co., Ltd.
  • Silane coupling agent 1 KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd.
  • Carbon black 1 # 20 manufactured by Mitsubishi Chemical Corporation Flame retardant 1: FP-100 manufactured by Fushimi Pharmaceutical (phosphazene flame retardant: compound represented by formula (11)) Curing accelerator 1: Imidazole catalyst 2PHZ-PW manufactured by Shikoku Kasei Kogyo Co., Ltd.
  • the compounding quantity of the inorganic filler 1 in Example 1 is corresponded to 80 volume% in the whole composition which comprises the sheet
  • Nitto Denko's heat release sheet (Riba Alpha NO. 31950E (thickness 96 ⁇ m, heat release temperature 200 ° C.) was prepared as a temporary fixing sheet. And has a layer structure having a pressure-sensitive adhesive layer on the other surface.
  • a metal plate (material: SUS304, thickness 0.5 mm, size 25 cm square) was prepared as a support.
  • the prepared support and the temporary fixing sheet were bonded together using a thermal laminator under conditions of 40 ° C. and a pressure of 0.2 MPa under atmospheric pressure. Under the present circumstances, it bonded together so that the heat-expandable adhesive layer of a temporary fix
  • the temporary fixing sheet and the wiring sheet are laminated by bonding the temporary fixing sheet and the wiring sheet on the support using a vacuum laminator at 100 ° C., 0.3 MPa, and a vacuum degree of 50 torr. A laminated body was obtained.
  • Chips were mounted on all mounting regions on the laminate using a flip chip bonder.
  • a chip having a length of 5 mm ⁇ width of 5 mm ⁇ thickness of 200 ⁇ m was used.
  • the mounting was performed in a vertical 20 ⁇ 20 horizontal interval with an interval of 3 mm (distance between the end of one chip and the end of the next chip).
  • the mounting conditions were as follows. (Mounting conditions) Degree of vacuum: 3Pa Temperature: 300 ° C Pressure: 1.5g / bump
  • the above-mentioned wiring sheet with the chip mounted thereon was placed in a vacuum press, and the sealing sheet obtained above was placed thereon. Thereafter, the chamber was evacuated. Next, molding was performed under the conditions of 100 ° C., 1 MPa, a vacuum degree of 20 torr, and a pressurization time of 1 minute. Thereafter, the atmosphere was released, the mold was opened, and the molded product was taken out. Furthermore, the sealing sheet was cured at 130 ° C. for 2 hours under atmospheric pressure.
  • the molded product after curing was heated on a hot plate at 200 ° C. for 30 seconds.
  • the thermally expandable pressure-sensitive adhesive layer on the support side of the temporary fixing sheet was thermally expanded and peeled off from the support.
  • the temporary fixing sheet was peeled off from the wiring sheet.
  • solder balls were formed on the surface of the gold layer, which is the end face of the external connection conductor exposed on the base insulating layer. Finally, dicing into individual semiconductor devices was performed.
  • Example 1 results of semiconductor device manufacturing evaluation. In Example 1, it was confirmed that the semiconductor device was obtained with simple work contents. Further, in Example 1, since the wiring sheet and the chip are bonded before sealing, the positional deviation between the wiring sheet and the semiconductor chip due to molding and thermosetting of the sealing sheet cannot occur. As a result, it can be seen that connection failure between the wiring sheet and the semiconductor chip can be suppressed.
  • the thickness was measured as the thickness from the base surface to the farthest part.
  • the thickness of the sealing sheet that is, a value obtained by subtracting 400 ⁇ m from the obtained measured thickness was defined as the amount of warpage.
  • the warpage amount was 2 mm.
  • Comparative Example 1 a sheet having a shape of 20 cm square and a thickness of 400 ⁇ m was prepared using a sealing sheet having the following composition.
  • Comparative Example 1 ⁇ Creation of sealing sheet>
  • MEK methyl ethyl ketone
  • MEK methyl ethyl ketone
  • Epoxy resin 2 bisphenol A type epoxy resin (Japan Epoxy Resin, Epicoat 828)
  • Epoxy resin 3 Trishydroxyphenylmethane type epoxy resin (Nippon Kayaku, EPPN-501HY)
  • Thermoplastic resin 2 acrylic copolymer (manufactured by Nagase ChemteX, Teisan Resin SG-P3, weight average molecular weight: 850,000)
  • Phenolic resin 2 Novolac type phenolic resin (Maywa Kasei, DL-65)
  • Carbon black 2 Mitsubishi Chemical # 20
  • Inorganic filler 2 Spherical fused silica powder having an average particle size of 5.5 ⁇ m (manufactured by Denki Kagaku Kogyo Co., Ltd., FB-7SDC)
  • the compounding quantity of the inorganic filler 2 in the comparative example 1 is equivalent to 41 volume% in the whole composition which comprises the sheet
  • Example 1 Using the sealing sheet according to Comparative Example 1, the amount of warpage was measured in the same manner as in Example 1, and the result was 10 mm.

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Abstract

L'invention porte sur un procédé de fabrication d'un dispositif à semi-conducteurs, qui comprend : une étape A pour préparer un stratifié dans laquelle au moins une feuille pour un assemblage temporaire et une feuille de câblage qui comporte une couche de recâblage sont stratifiées ; une étape B pour un montage de puce à protubérances d'une puce à semi-conducteurs sur la feuille de câblage du stratifié ; une étape C pour préparer une feuille d'étanchéité qui est obtenue par travail de plastique d'un matériau malaxé qui est obtenu par malaxage d'une résine d'époxy, d'un agent de traitement et d'un remplisseur inorganique ; une étape D pour enfouir la puce à semi-conducteurs dans la feuille d'étanchéité par disposition de la feuille d'étanchéité sur la surface où la puce à semi-conducteurs est présentée ; une étape E pour durcir thermiquement la feuille d'étanchéité ; et une étape F pour séparer la feuille pour un assemblage temporaire de la feuille de câblage.
PCT/JP2014/062144 2013-06-07 2014-05-02 Procédé de fabrication d'un dispositif à semi-conducteurs WO2014196296A1 (fr)

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JP2013121004A JP2014239154A (ja) 2013-06-07 2013-06-07 半導体装置の製造方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018030262A1 (fr) * 2016-08-09 2018-02-15 株式会社村田製作所 Procédé de fabrication de composant de module
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