WO2014081424A1 - Dispositif de logement destiné à loger et à monter une tranche - Google Patents

Dispositif de logement destiné à loger et à monter une tranche Download PDF

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Publication number
WO2014081424A1
WO2014081424A1 PCT/US2012/066204 US2012066204W WO2014081424A1 WO 2014081424 A1 WO2014081424 A1 WO 2014081424A1 US 2012066204 W US2012066204 W US 2012066204W WO 2014081424 A1 WO2014081424 A1 WO 2014081424A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
accommodating device
accommodation
contact
fluid
Prior art date
Application number
PCT/US2012/066204
Other languages
English (en)
Inventor
Spencer Hochstetler
Richard Dalton Peters
Travis Acra
Original Assignee
Ev Group Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group Inc. filed Critical Ev Group Inc.
Priority to EP12868925.4A priority Critical patent/EP2923376A4/fr
Priority to CN201280076528.6A priority patent/CN104718608A/zh
Priority to PCT/US2012/066204 priority patent/WO2014081424A1/fr
Priority to JP2015544041A priority patent/JP2016501445A/ja
Priority to US14/435,961 priority patent/US20150270155A1/en
Priority to SG2014013064A priority patent/SG2014013064A/en
Priority to TW102135591A priority patent/TWI593049B/zh
Publication of WO2014081424A1 publication Critical patent/WO2014081424A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Definitions

  • the present invention was made pursuant to a ' joint research agreement between Eastman Chemical Company and EV Group, Inc. in effect prior to the date the invention was made.
  • the present invention relates to an accommodating device for accommodation and mounting of a wafer for processing the wafer in accordance with claim 1 .
  • the problem addressed by the present invention is that of specifying an accommodating device with which an improved application of fluid with respect to temperature and/or fluid distribution is made possible while simultaneously preventing to the best of one' s ability the application of fluid on sides of the wafer that are not supposed to have fluid applied to them.
  • the present invention is based on the provision of an accommodating device especially with a specially formed or contoured ring section adapted to the wafer to be accommodated, in particular a circumferentially enclosed ring section which together with the accommodated wafer forms an accommodating space for the fluid to be applied on the wafer.
  • the wafer can be accommodated within the ring section, wherein the word "within” means within the interior of the ring.
  • the accommodating space thus formed is in particular open upward and is tightly sealed downward.
  • the sealing takes place in accordance with the invention in particular at an inner circumference of the ring section, preferably at a circumferential edge and/or at a recess and/or at a mounting surface for the accommodation of the wafer.
  • the mounting surface is in the process in particular only in contact with a small, in particular annular, surface section of a contact surface of the wafer (effective contact surface).
  • the ring section and/or the accommodating device are in particular at least predominantly annular, wherein the accommodating space is preferably constructed concentrically to the ring section.
  • the incorporation of vacuum suction paths in the mounting surface in order to fix the wafer by means of low pressure would be conceivable.
  • the mounting surfaces can also exhibit other fixations.
  • the use of electrostatic fixing elements, adhesive elements, clamping, surface grinding or the like are conceivable.
  • the invention describes in other words or in an alternative formulation a wafer support device to be used in single wafer processing applications which permits faster heating rates for fluids which are applied to the top of a wafer which is in contact with the mounting device and moreover improves the spatial uniformity of the fluid temperatures. It contains in addition a medium which holds a significant portion of an emitted fluid volume on top of the wafer, as a result of which the performance of the wafer processing can be increased, which otherwise could be decreased through the draining off of fluid from the top of the wafer. [0011]
  • the present invention solves the above described problems and permits both a slow and a rapid wafer rotation during a plurality of different wafer processing steps.
  • the wafer mounting device can be constructed in such a way that it supports typical wafer shapes and sizes ' that are found in the fields of semi-conductors, micro-electromechanical components, light-emitting diodes, photovoltaics, wafer level packaging and in other similar fields.
  • the invention permits in addition temperature monitoring on the top and rear of the wafer.
  • One significant advantage of the invention is the possibility of being able to cover a wafer with a greater fluid volume than is possible with a common vacuum mounting device or a pin mounting device which can aid in the removal of thick dry film photoresist.
  • the invention is in particular constructed in such a way that fluid thicknesses of more than 0. 1 mm, more than 1.0 mm, more than 1.5 mm, or even up to 5 mm can be accommodated on the wafer.
  • the invention is constructed in such a way that fluid thicknesses of more than 10 mm or even more than 15 mm can be accommodated on the wafer.
  • the dimensions of the mounting device are preferably selected in accordance with the invention in such a way that fluid volumes can be accommodated which permit a thickness of the fluid on the wafer of more than 0.1 mm, more than 1 .0 mm, with more than 1.5 mm, or even up to 5 mm.
  • the dimensions of the mounting device are selected in accordance with the invention in such a way that fluid volumes can be accommodated which permit a thickness of the fluid on the wafer of more than 10 mm, or even more than 1 5 mm in normal direction.
  • the circumferential wall is contoured in accordance with a circumferential edge of the wafer.
  • an optimum alignment of the wafer relative to the accommodating device is ensured.
  • a sealing contact on the inner circumference of the ring section is made possible.
  • the wafer can be constructed at least predominantly annular (with an alignment notch or a flat section). In this case not only is an alignment along the wafer necessary, but rather also in rotational direction.
  • a further inventive measure in accordance with an embodiment of the invention consists in the fact that the accommodating device exhibits an overflow plane differing from the contact plane formed by the upper edge, in particular running parallel to the contact plane. As a result of this a perfect contact and mounting of the wafer and a defined accommodating space volume are made possible. Simultaneously the accommodating device is easier to handle.
  • the distance between the contact plane and the overflow plane is greater than the thickness of the wafer to be accommodated.
  • the accommodating device exhibits an accommodation opening for the accommodation of the wafer formed by the upper edge and the circumferential wall. Hence the wafer can be efficiently accommodated and the fluid ca simultaneously be supplied through the accommodation opening.
  • the accommodating device exhibit a mounting surface formed at least partially by the circumferential wall and/or by the recess or by at least an accommodating projection provided on the recess, the in particular sealing, mounting of the wafer on the accommodating device is made possible in a manner that is easy to handle.
  • a corresponding, in particular separate, sealing component in order to ensure the seal tightness between the wafer and mounting surface. In the process it is preferably a sealing ring.
  • Another idea in accordance with the invention consists in having the mounting surface less than 50% of the contact surface, in particular less than 25% of the contact surface, preferably less than 1 0% of the contact surface.
  • the heat transfer to the predominantly effective contact surface between the wafer and the accommodating device becomes more uniform so that there are slight heat fluctuations/differences along the wafer surface.
  • the wafer deforms less.
  • a material with optimum thermal conductivity is selected, preferably with the lowest possible thermal conductivity in order to decrease the convective heat transfer or to prevent it as far as possible.
  • the stability, in particular rigidity of the accommodating device is improved in accordance with the invention as a result of the fact that contact elements adjoining the recess are provided, in particular being provided in the form of a brace, preferably in a center of the accommodating device, even more preferably being radial, converging, contact elements.
  • a first extension would be a mechanical brush that contacts the surface of the wafer while the wafer is rotated.
  • the brush can have any shape but will have most preferably a cylindrical shape.
  • the cylindrical axis of the brush is parallel to the surface of the wafer.
  • the rotation axis is always normal to the wafer surface.
  • the symmetrical axis of the brush even coincides with the normal symmetry axis of the wafer (suppose the wafer has no notch or flat, to have full rotational symmetry).
  • the brush can perform translational movement around the wafer.
  • the brush itself can always rotate around its symmetrical axis.
  • a second extension would be a nozzle that implies a gas and/or liquid onto the surface of the wafer.
  • the pressure and/or the velocity of the gas and/or liquid can be controlled precisely using external hardware and/or software controller.
  • the angle between the normal to the wafer and the jet of gas and/or fluid from the nozzle can be adjusted.
  • a third extension would be a sonic device, most likely a megasonic device that contacts at least the liquid wetting the wafer and/or the surface of the wafer.
  • the megasonic device is either shaped like a pie or is a full area device.
  • All extensions can be used before, while and after the wetting of the wafer surface to improve and speed up cleaning of the wafer surface.
  • Fig. l a a view of a first embodiment of the inventive accommodating device
  • FIG. lb the accommodating device according to Figure l a with mounted wafer in a cutout partial lateral view along line of intersection A- A from Figure l a,
  • FIG. 2a a view of a second embodiment of the inventive accommodating device
  • FIG. 2b the accommodating device according to Figure l a with mounted wafer in a cutout partial lateral view along line of intersection B-B from Figure 2a,
  • FIG. 3a a view of a third embodiment of the inventive accommodating device
  • FIG. 3b the accommodating device according to Figure l a with mounted wafer in a cutout partial lateral view along line of intersection C-C from Figure 3a,
  • FIG. 4a a cutout partial lateral view of a fourth embodiment of the inventive accommodating device
  • FIG. 4b the accommodating device according to Figure 4a with mounted wafer in a cutout partial lateral view along line of intersection D-D from Figure 4a.
  • FIGS. 1 and 3 show different embodiments of an accommodating device 1 for accommodation and mounting of a wafer 3.
  • the accommodation of the wafer 3 takes place by means of contact of a contact surface 3 a of the wafer 3 on a mounting surface 2, 2 ' , 2 " , 2 " ' , for example by a robot arm not shown in the figure which takes the wafer 3 from a wafer stack or a cassette and places it on the mounting surface 2.
  • An at least predominantly annular ring section 4 has at least two planes differing from one another, namely a contact plane A, upon which the wafer 3 is accommodated and if necessary fixed.
  • a contact plane A upon which the wafer 3 is accommodated and if necessary fixed.
  • a circumferential edge 3k of the wafer 3 can in particular be in contact with a circumferential wall 7.
  • the circumferential wall 7 can run orthogonally to contact plane A of the wafer 3 or at an angle relative to the wafer principal plane (contact surface 3 a) .
  • a circular ring diameter B i of the circumferential wall 7 about the height of contact plane A is greater than or equal to a wafer diameter of the wafer 3 , while an inside diameter B 2 o f the ring section 4 is less than the wafer diameter.
  • the circular ring diameter B t preferably has a wafer diameter determined in the industry standard of 1 " , 2 “ , 3 “ , 4" , 5 “ , 6 ' , 8 “ , 1 2 “ or 1 8 " .
  • the circular ring diameter B ] can also have a diameter deviating from this industry standard.
  • the second plane can terminate flush with a top 3 o of the wafer surface or preferably protrude beyond it so that a fluid 9 on the wafer 3 can be accommodated without said fluid running extensively over the accommodating device 1 .
  • the fluid 9 is accommodated in an accommodating space 8 formed by the wafer 3 and the ring section 4, wherein the fluid 9 can be supplied via an accommodation opening 1 0 (thus from above) to the accommodating space 8 by means of a (not shown in the figure) dispensing device.
  • the contact of the wafer 3 occurs not only on the recess 6, but rather in particular additionally on contact elements 12, which j oin the recess 6 radially or in a star pattern from a center of the accommodating device 1 .
  • accommodation elements 12 are provided so that the contact surface 3 a of the wafer 3 is exposed at least primarily and hence the least heat dissipation possible occurs via the accommodating device 1 .
  • the contact elements 12 can also be located beneath the recess 6, so that its surface does not come into contact with the wafer and hence, in accordance with the invention, a further thermal insulation takes place.
  • a distance D between contact plane A and the overflow plane C denotes the separation distance between the first and second plane (contact plane A and overflow plane C) and behaves proportionally to the fluid volume which can be accommodated by the accommodating device 1 in the accommodating space 8.
  • the volume of the wafer 3 with the thickness d is in this connection to be deducted.
  • the distance D is in particular selected greater than the thickness d of the wafer 3.
  • the contact plane A is formed by the mounting surface 2, 2 ' , 2 " , 2 ! " .
  • the ring section exhibits a recess 6 which joins the circumferential wall 7.
  • the overflow plane C is formed by an upper edge 5 joining on the opposing end of the circumferential wall, wherein the circumferential wall 7 can have a rounded transition to the upper edge 5.
  • a radial formation (not shown in the figure) pointing in the direction of the wafer 3 , in particular in the region of the circumferential wall 7, can hold the wafer in rotation in such a way that its speed conforms to the speed of the accommodating device 1 , thus the wafer 3 does not shift in the accommodating device 1.
  • the accommodating device 1 can be made at least partially, preferably predominantly, of polymers, metals, ceramics or other materials or material combinations. Some surfaces, in particular those surfaces that can come into contact with processing fluids, can be coated in such a way that they are chemical resistant or that their surface energy is altered. Individual components of the accommodating device 1 can be composed of a number of these materials. As a result it is possible to use components with defined physical and/or chemical properties that are optimally adapted to the system. For example, through the combination of different materials the thermal conductivity and with it the transfer of heat can be minimized.
  • Figures 2a and 2b show a second embodiment of the present invention.
  • This embodiment has the feature that the contact plane A is defined by tops, in particular spires, of at least three, preferably (here) six projections 13 (support elements) protruding from the recess 6.
  • the support elements are preferably constructed as conically shaped pins.
  • the wafer 3 is arranged aligned on the support elements. Hence this embodiment exhibits exactly three planes (contact plane A, overflow plane C and defined by the recess 6).
  • the proj ections 13 exhibit a height Hi which in total with the thickness d of the wafer 3 is less than the distance D.
  • Figures 3 a and 3b show a third and preferred embodiment.
  • the contact plane A is formed by the recess 6, as with the first embodiment.
  • the third embodiment exhibits the special feature that at least three, preferably (here) six proj ections 13 ' protruding from the recess 6 are arranged distributed concentrically on the circumference. These are used to position the wafer 3 vis-a-vis the accommodating device 1 , in particular by touching the circumferential edge 3k of the wafer 3.
  • the projections 13 ' can be fixed in their position or can be mounted off-center, so that the inside dimension formed by them can be adjusted.
  • the projections 13 ' exhibit a height H 2 which is in particular greater than the thickness d of the wafer 3 and/or less than the distance D .
  • a radial formation pointing in the direction of the wafer 3 on at least one of the projections 13 ' can hold the wafer 3 in rotation so that its speed conforms to the speed of the accommodating device 1 .
  • one of the proj ections 13 ' can also assume the function by shifting said projection radially inward, that is, in the direction of the wafer 3 after the wafer 3 is accommodated.
  • a fourth and likewise preferred embodiment can be seen in Figures 4a and 4b.
  • This embodiment corresponds essentially to the third embodiment with the difference that the projections 13 " here are arranged on the transition of the circumferential wall 7 to the recess 6, in particular as formation(s) of the ring section 4.
  • the projections are constructed as revolving tiers.
  • the projections 13 " exhibit a height H 3 which in particular is approximately equal to the thickness d of the wafer 3 and/or less than the distance D.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un dispositif de logement destiné à loger et à monter une tranche (3) pour l'application d'un fluide (9) sur un sommet (30) de la tranche (3) avec les caractéristiques suivantes : une section annulaire tournante (4) avec : d) un bord supérieur tournant (5), e) un évidement tournant (6) et f) une paroi circonférentielle (7) qui court du bord supérieur (5) à l'évidement (6), un plan de contact (A) agencé à l'intérieur de la section annulaire (4) pour le logement de la tranche (3) sur une surface de contact (3a) de la tranche (3), la section annulaire (4) formant - à l'aide du logement de la tranche (3) - avec ladite tranche un espace de logement (8) destiné à loger le fluide (9).
PCT/US2012/066204 2012-11-05 2012-11-21 Dispositif de logement destiné à loger et à monter une tranche WO2014081424A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
EP12868925.4A EP2923376A4 (fr) 2012-11-21 2012-11-21 Dispositif de logement destiné à loger et à monter une tranche
CN201280076528.6A CN104718608A (zh) 2012-11-21 2012-11-21 用于容纳及安装晶片的容纳装置
PCT/US2012/066204 WO2014081424A1 (fr) 2012-11-21 2012-11-21 Dispositif de logement destiné à loger et à monter une tranche
JP2015544041A JP2016501445A (ja) 2012-11-21 2012-11-21 ウェハの収容および載置用の収容具
US14/435,961 US20150270155A1 (en) 2012-11-21 2012-11-21 Accommodating device for accommodation and mounting of a wafer
SG2014013064A SG2014013064A (en) 2012-11-21 2012-11-21 Accommodating device for accommodation and mounting of a wafer
TW102135591A TWI593049B (zh) 2012-11-05 2013-10-01 用以收納及安裝一晶圓之收納裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2012/066204 WO2014081424A1 (fr) 2012-11-21 2012-11-21 Dispositif de logement destiné à loger et à monter une tranche

Publications (1)

Publication Number Publication Date
WO2014081424A1 true WO2014081424A1 (fr) 2014-05-30

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PCT/US2012/066204 WO2014081424A1 (fr) 2012-11-05 2012-11-21 Dispositif de logement destiné à loger et à monter une tranche

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US (1) US20150270155A1 (fr)
EP (1) EP2923376A4 (fr)
JP (1) JP2016501445A (fr)
CN (1) CN104718608A (fr)
SG (1) SG2014013064A (fr)
WO (1) WO2014081424A1 (fr)

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US20150270155A1 (en) 2015-09-24
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JP2016501445A (ja) 2016-01-18
SG2014013064A (en) 2015-02-27

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