WO2014080815A1 - Appareil de pulvérisation cathodique - Google Patents

Appareil de pulvérisation cathodique Download PDF

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Publication number
WO2014080815A1
WO2014080815A1 PCT/JP2013/080646 JP2013080646W WO2014080815A1 WO 2014080815 A1 WO2014080815 A1 WO 2014080815A1 JP 2013080646 W JP2013080646 W JP 2013080646W WO 2014080815 A1 WO2014080815 A1 WO 2014080815A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
anode
magnetic circuit
sheet
displacement
Prior art date
Application number
PCT/JP2013/080646
Other languages
English (en)
Japanese (ja)
Inventor
達己 宇佐美
淳介 松崎
高橋　明久
一也 齋藤
智晴 藤井
尚志 覚知
Original Assignee
株式会社 アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社 アルバック filed Critical 株式会社 アルバック
Publication of WO2014080815A1 publication Critical patent/WO2014080815A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates

Definitions

  • One aspect of the sputtering apparatus includes an anode, a cathode including a plate-like target, a magnetic circuit having a fixed position with respect to the anode, a power source that supplies power to the cathode, and the anode Without changing the position of the magnetic circuit, the displacement unit that changes the position of the target with respect to the magnetic circuit by swinging the target, and the drive of the power source and the drive of the displacement unit are controlled at different positions. And a controller for sputtering the target.
  • an ITO film is formed on the sheet S by sputtering of the target 22.
  • the control device 10 ⁇ / b> C outputs a drive start signal to the exhaust unit 14, and the exhaust unit 14 exhausts the inside of the vacuum chamber 11.
  • the control device 10 ⁇ / b> C outputs a supply start signal to the sputtering gas supply unit 12 and the reaction gas supply unit 13.
  • the sputtering gas supply unit 12 supplies argon gas into the vacuum chamber 11, and the reaction gas supply unit 13 supplies oxygen gas into the vacuum chamber 11.
  • the inside of the vacuum chamber 11 is made into a vacuum atmosphere by driving the sputtering gas supply unit 12, the reaction gas supply unit 13, and the exhaust unit 14.
  • the driving force of the shaft driving unit 45 is transmitted to the displacement plate 51 via the operating shaft 44 and the connecting portion 46.
  • the displacement plate 51 that receives the driving force of the shaft driving unit 45 is displaced along the displacement direction with respect to the housing 41.
  • the magnetic circuit 25 fixed to the housing 41 is disposed in the slit 51h of the displacement plate 51 to be displaced, the above-described displacement plate 51 is also along the displacement direction with respect to the magnetic circuit 25. Displace.
  • the film formation target may not be the sheet S, but may be a substrate formed of various materials.
  • the sputtering apparatus may be configured to convey the film formation target when sputtering the target 22 or may be configured to fix the film formation target during sputtering.

Abstract

La présente invention se rapporte à un appareil de pulvérisation cathodique qui comprend : une anode (54) ; une cathode (22, 23) qui comprend une cible en forme de plaque (22) ; un circuit magnétique (25) dont la position est fixée par rapport à l'anode (54) ; une alimentation électrique qui fournit un courant à la cathode ; une unité de déplacement (21) qui modifie, par oscillation de la cible (22), la position de la cible par rapport au circuit magnétique (25) sans modifier la position du circuit magnétique (25) par rapport à l'anode (54) ; et une unité de commande (10C) qui pulvérise la cible (22) à des positions différentes les unes des autres par contrôle de la commande de l'alimentation électrique et de la commande de l'unité de déplacement (21).
PCT/JP2013/080646 2012-11-20 2013-11-13 Appareil de pulvérisation cathodique WO2014080815A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-254608 2012-11-20
JP2012254608 2012-11-20

Publications (1)

Publication Number Publication Date
WO2014080815A1 true WO2014080815A1 (fr) 2014-05-30

Family

ID=50775998

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/080646 WO2014080815A1 (fr) 2012-11-20 2013-11-13 Appareil de pulvérisation cathodique

Country Status (2)

Country Link
TW (1) TW201425623A (fr)
WO (1) WO2014080815A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190015593A (ko) * 2016-06-29 2019-02-13 가부시키가이샤 알박 스퍼터링 장치용 성막 유닛

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI579880B (zh) * 2015-05-29 2017-04-21 國立臺灣科技大學 陽極層離子源與陽極層離子源離子束濺鍍模組
JP6416440B1 (ja) * 2017-01-05 2018-10-31 株式会社アルバック 成膜方法及び巻取式成膜装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01111870A (ja) * 1987-10-23 1989-04-28 Matsushita Electric Ind Co Ltd スパッタリング装置
JP2002302766A (ja) * 2001-04-05 2002-10-18 Anelva Corp 高周波マグネトロンスパッタリング装置
JP2004346388A (ja) * 2003-05-23 2004-12-09 Ulvac Japan Ltd スパッタ源、スパッタリング装置、及びスパッタリング方法
JP2005290550A (ja) * 2004-03-11 2005-10-20 Ulvac Japan Ltd スパッタリング装置
JP2012102384A (ja) * 2010-11-12 2012-05-31 Canon Anelva Corp マグネトロンスパッタ装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01111870A (ja) * 1987-10-23 1989-04-28 Matsushita Electric Ind Co Ltd スパッタリング装置
JP2002302766A (ja) * 2001-04-05 2002-10-18 Anelva Corp 高周波マグネトロンスパッタリング装置
JP2004346388A (ja) * 2003-05-23 2004-12-09 Ulvac Japan Ltd スパッタ源、スパッタリング装置、及びスパッタリング方法
JP2005290550A (ja) * 2004-03-11 2005-10-20 Ulvac Japan Ltd スパッタリング装置
JP2012102384A (ja) * 2010-11-12 2012-05-31 Canon Anelva Corp マグネトロンスパッタ装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190015593A (ko) * 2016-06-29 2019-02-13 가부시키가이샤 알박 스퍼터링 장치용 성막 유닛
CN109415802A (zh) * 2016-06-29 2019-03-01 株式会社爱发科 溅射装置用成膜单元
TWI659120B (zh) * 2016-06-29 2019-05-11 日商愛發科股份有限公司 濺鍍裝置用成膜單元
KR102102812B1 (ko) * 2016-06-29 2020-04-22 가부시키가이샤 알박 스퍼터링 장치용 성막 유닛
US10770275B2 (en) 2016-06-29 2020-09-08 Ulvac, Inc. Film forming unit for sputtering apparatus

Also Published As

Publication number Publication date
TW201425623A (zh) 2014-07-01

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