WO2014080815A1

WO2014080815A1 - Sputtering apparatus

Info

Publication number: WO2014080815A1
Application number: PCT/JP2013/080646
Authority: WO
Inventors: 達己宇佐美; 淳介松崎; 高橋　明久; 一也齋藤; 智晴藤井; 尚志覚知
Original assignee: 株式会社アルバック
Priority date: 2012-11-20
Filing date: 2013-11-13
Publication date: 2014-05-30
Also published as: TW201425623A

Abstract

This sputtering apparatus is provided with: an anode (54); a cathode (22, 23) that includes a board-shaped target (22); a magnetic circuit (25) having the position thereof fixed with respect to the anode (54); a power supply that supplies power to the cathode; a displacement unit (21) that changes, by swinging the target (22), the position of the target with respect to the magnetic circuit (25) without changing the position of the magnetic circuit (25) with respect to the anode (54); and a control unit (10C) that sputters the target (22) at positions different from each other by controlling drive of the power supply and drive of the displacement unit (21).

Description

Sputtering equipment

The technology of the present disclosure relates to a sputtering apparatus that forms a thin film on a film formation target being conveyed.

For forming an electrode sheet for a touch panel, a winding film forming apparatus that forms a thin film on the wound sheet is used (for example, see Patent Document 1). One of the thin films formed on the electrode sheet includes an indium tin oxide film. As one of the roll-up type film forming apparatuses for forming an indium tin oxide film, a sputtering apparatus having a magnetic circuit is known. Yes. An apparatus that changes the position of a magnetic circuit with respect to a target when the target is sputtered is also known. In such a sputtering apparatus, the state of the leakage magnetic field formed on the surface of the target changes as the position of the magnetic circuit changes.

JP 2009-19246 A

By the way, when the position of the magnetic circuit with respect to the target changes, the position of the magnetic circuit with respect to the anode usually also changes. At this time, if the position of the magnetic circuit relative to the anode changes, the state of the plasma formed on the surface of the target also changes, so the state of the sputtered particles emitted from the target changes depending on the position of the magnetic circuit. Such a problem arises even if the film formation target is not a sheet or the thin film to be formed is not an indium tin oxide film.

An object of the technology of the present disclosure is to provide a sputtering apparatus that can suppress a change in the state of plasma formed on the surface of a target.

One aspect of the sputtering apparatus according to the technique of the present disclosure includes an anode, a cathode including a plate-like target, a magnetic circuit having a fixed position with respect to the anode, a power source that supplies power to the cathode, and the anode Without changing the position of the magnetic circuit, the displacement unit that changes the position of the target with respect to the magnetic circuit by swinging the target, and the drive of the power source and the drive of the displacement unit are controlled at different positions. And a controller for sputtering the target.

In this configuration, even when the position of the magnetic circuit relative to the target changes during sputtering of the target, the position of the magnetic circuit relative to the anode does not change. Therefore, it is possible to suppress a change in the state of plasma formed on the surface of the target.

In the above aspect, the anode may be disposed on the opposite side of the magnetic circuit with respect to the cathode. In this case, it is preferable that the displacement portion is configured to change the position of the target along a direction intersecting a direction in which the anode, the target, and the magnetic circuit are arranged.

In this configuration, since the moving direction of the target intersects with the direction in which the anode, the target, and the magnetic circuit are arranged, the surface of the target is scanned with respect to the plasma formation region between the anode and the magnetic circuit. For this reason, the part exposed to the plasma on the surface of the target changes. Therefore, the use efficiency of the target is enhanced by expanding the erosion region on the surface of the target while suppressing the change of the plasma state.

In the above aspect, it is preferable that the sputtering apparatus further includes a transport unit that transports the film formation target so as to pass through a region facing the target. In this case, it is preferable that the anode extends in a direction intersecting with the transport direction of the film formation target.

In this configuration, compared with a configuration in which the anode extends along the conveyance direction of the film formation target, it is possible to suppress a reduction in film thickness uniformity in the surface of the film formation target due to the shadow effect of the anode.

In the above aspect, it is preferable that the displacement portion alternately changes the position of the target between the first position and the second position.

In this configuration, since the position of the target alternately changes between the first position and the second position, the erosion region on the surface of the target can be made uniform.

In the above aspect, the main component of the target is preferably indium tin oxide. In this case, the sputtering apparatus further includes a gas supply unit that supplies sputtering gas and oxygen gas between the cathode and the anode.

In this configuration, since the change in the plasma state is suppressed, the oxygen reactivity is suppressed from being changed due to the strength of the plasma, so the amount of oxygen in the indium tin oxide film formed on the film formation target is changed. It can be suppressed.

In the above aspect, it is preferable that the sputtering apparatus further includes a vacuum chamber that accommodates the target and a film formation target. In this case, it is preferable that the displacement part includes a driving part and a connecting member that is connected to the driving part and the cathode and changes a position of the cathode by a driving force of the driving part. Moreover, it is preferable that the said connection member is arrange | positioned inside a vacuum chamber and the outside of a vacuum chamber, and the said drive part is arrange | positioned outside the said vacuum chamber.

In this configuration, the driving unit is arranged in a space separated from the vacuum atmosphere where the target is sputtered. For this reason, even if the driving unit operates to change the position of the cathode, it is possible to suppress the scattering of foreign matters accompanying the operation of the driving unit in a vacuum atmosphere.

It is an apparatus block diagram which shows the structure in a vacuum chamber in one Embodiment of the sputtering device in this indication. It is sectional drawing which shows the cross-section of a target apparatus with the cross-section of a displacement part. It is an action figure showing the state where a target and a cathode move. It is an action figure showing the state where a target and a cathode move.

An embodiment that embodies the technology of the present disclosure will be described with reference to FIGS. 1 to 4.

[Configuration of sputtering equipment]
The configuration of the sputtering apparatus will be described with reference to FIG.

As shown in FIG. 1, the sputtering apparatus 10 includes a vacuum chamber 11. The vacuum chamber 11 has a box shape extending in a direction perpendicular to the paper surface, and the vacuum chamber 11 has a supply port 11 a and an exhaust port 11 b penetrating through the wall of the vacuum chamber 11. A sputtering gas supply unit 12 that supplies a sputtering gas into the vacuum chamber 11 and a reaction gas supply unit 13 that supplies a reaction gas are connected to the supply port 11a. The sputter gas supply unit 12 and the reaction gas supply unit 13 may be connected to one pipe extending from the supply port 11a toward the outside of the vacuum chamber 11, or may be connected to the supply port 11a independently of each other. Good. The sputtering gas supply unit 12 supplies a rare gas such as argon gas into the vacuum chamber 11, and the reaction gas supply unit 13 supplies oxygen gas into the vacuum chamber 11.

The exhaust part 11 which exhausts the inside of the vacuum chamber 11 is connected to the exhaust port 11b. The exhaust part 14 is comprised by vacuum pumps, such as a turbo-molecular pump, for example.

Displacement portions 21 extending along a direction orthogonal to the paper surface are respectively attached to the opposite wall surfaces of the inner wall surface of the vacuum chamber 11, and a target device 20 is attached to each displacement portion 21. Although each displacement part 21 is fixed to a different position in the vacuum chamber 11 and connected to a different target device 20 (displacement target), the configuration is the same.

Each target device 20 is provided with a cathode including a target 22 mainly composed of indium tin oxide (ITO) and a backing plate 23 to which the target 22 is fixed. In addition, ITO occupies 95 mass% in the formation material of the target 22, Preferably it occupies 99 mass% or more. The surface of the target 22 opposite to the backing plate 23 is set as the surface (sputter surface) of the target 22.

A target power supply 24 that supplies power to the target 22 is connected to the backing plate 23. The target device 20 further includes a magnetic circuit 25 that is disposed between the backing plate 23 and the displacement portion 21 and forms a magnetic field on the surface of the target 22. An adhesion prevention plate 26 is attached above and below the displacement portion 21, and each adhesion prevention plate 26 has a rectangular plate shape extending in a direction perpendicular to the paper surface. Note that the deposition preventing plate 26 functions as an anode.

Between the two target devices 20, a sheet conveying unit 30 that conveys the sheet S is installed. The sheet conveying unit 30 includes a delivery roller 31, a take-up roller 32, a film forming roller 33, delivery guide rollers 34a and 34b, and take-up

guide rollers

35a and 35b. Each of these rollers 31 to 33, 34a, 34b, 35a, 35b has a cylindrical shape extending in a direction perpendicular to the paper surface. A direction perpendicular to the paper surface and extending in the central axis of each of the rollers 31 to 33, 34a, 34b, 35a, and 35b is set as the roller axis direction. Both ends of each of the rollers 31 to 33, 34a, 34b, 35a and 35b are supported by the inner wall surface of the vacuum chamber 11 in a state where the rollers 31 to 33, 34a, 34b, 35a and 35b can be rotated.

Among these, the delivery roller 31, the take-up roller 32, the delivery guide rollers 34a and 34b, and the take-

up guide rollers

35a and 35b are arranged above the upper protection plate 26. The film forming roller 33 is disposed below the upper deposition preventing plate 26 and is disposed between the two target devices 20 in the vacuum chamber 11.

The sheet S before film formation wound around the delivery roller 31 is delivered from the delivery roller 31. A sheet S after film formation is wound around the outer peripheral surface of the winding roller 32. The two delivery guide rollers 34 a and 34 b are arranged between the delivery roller 31 and the film forming roller 33, and the two take-

up guide rollers

35 a and 35 b are arranged between the take-up roller 32 and the film formation roller 33. Has been.

The sheet S pulled out from the delivery roller 31 is applied in the order of the outer peripheral surface of the delivery guide rollers 34a and 34b, the outer peripheral surface of the film forming roller 33, the outer peripheral surface of the take-

up guide rollers

35a and 35b, and the outer peripheral surface of the take-up roller 32. Passed.

The sputtering apparatus 10 is equipped with a control device 10 C as a control unit that controls the driving of the sputtering gas supply unit 12, the reactive gas supply unit 13, the exhaust unit 14, the displacement unit 21, the target power supply 24, and the sheet conveyance unit 30. Has been. The control device 10C provides a supply start signal for starting the supply of gas from the

gas supply units

12 and 13 and a supply stop signal for stopping the supply of gas from the

gas supply units

12 and 13, respectively. Output to the

gas supply units

12 and 13. Further, the control device 10C outputs a drive start signal for starting driving of the exhaust unit 14 and a drive stop signal for stopping driving of the exhaust unit 14 to the exhaust unit 14.

Also, the control device 10C outputs a change start signal for starting the change of the cathode position and a change stop signal for stopping the change of the cathode position to the displacement unit 21. In addition, the control device 10 C supplies a supply start signal for starting supply of power from each target power supply 24 and a supply stop signal for stopping supply of power from each target power supply 24 to each target power supply 24. Output. Further, the control device 10 C outputs a conveyance start signal for starting conveyance of the sheet S by the sheet conveyance unit 30 and a conveyance stop signal for stopping conveyance of the sheet S to the sheet conveyance unit 30.

In the sputtering apparatus 10, an ITO film is formed on the sheet S by sputtering of the target 22. When forming the ITO film, first, the control device 10 C outputs a drive start signal to the exhaust unit 14, and the exhaust unit 14 exhausts the inside of the vacuum chamber 11. Then, the control device 10 C outputs a supply start signal to the sputtering gas supply unit 12 and the reaction gas supply unit 13. Thereby, the sputtering gas supply unit 12 supplies argon gas into the vacuum chamber 11, and the reaction gas supply unit 13 supplies oxygen gas into the vacuum chamber 11. In addition, the inside of the vacuum chamber 11 is made into a vacuum atmosphere by driving the sputtering gas supply unit 12, the reaction gas supply unit 13, and the exhaust unit 14.

Next, the control device 10 C outputs a supply start signal to each target power supply 24, and each target power supply 24 supplies power to the backing plate 23. Thereby, in the vacuum chamber 11, plasma is generated from the argon gas and the oxygen gas, and positive ions in the plasma collide with the target 22. As a result, ITO particles are released from the target 22, and the ITO particles are deposited on the surface of the sheet S together with the oxidation source in the plasma, so that the ITO film is formed on the surface of the sheet S while compensating for the lack of oxygen atoms. It is formed.

When sputtering is being performed, the control device 10C outputs a conveyance start signal to the sheet conveyance unit 30 so that the take-up roller 32 rotates in the clockwise direction in the left-right direction of the paper surface, and the sheet S has a predetermined value. It is wound around the outer peripheral surface of the winding roller 32 at a speed. As a result, the other rollers also rotate, so that the sheet S before film formation fed from the feed roller 31 is conveyed. An ITO film having a predetermined thickness, for example, 10 nm or more and 20 nm or less is formed on the sheet S being conveyed.

When the sheet S wound around the outer peripheral surface of the film forming roller 33 faces the surface of the target 22, most of the ITO film is formed on the sheet S. And the film-forming roller 33 conveys the sheet | seat S, as shown by the white arrow in FIG. That is, the sheet S is conveyed along the circumferential direction of the film forming roller 33 so as to pass through a region facing the surface of the target 22. This circumferential direction is set as the conveyance direction of the sheet S when the target 22 is sputtered.

Further, when sputtering is being performed, the control device 10C outputs a change start signal to each displacement unit 21. Thereby, members of the target device 20 other than the target power supply 24 and the magnetic circuit 25 move with respect to the magnetic circuit 25. At this time, the tangential direction of the outer peripheral surface of the film forming roller 33 facing the target device 20 is set as the displacement direction. That is, the displacement direction is set parallel to the surface of the target 22. The members of the target device 20 other than the target power supply 24 and the magnetic circuit 25 reciprocate along the displacement direction with respect to the magnetic circuit 25. Thereby, the position of the target 22 included in the target device 20 repeatedly moves back and forth along the displacement direction, that is, the target 22 swings.

[Configuration of Displacement Unit and Target Device]
With reference to FIG. 2, the structure of the displacement part 21 and the target apparatus 20 is demonstrated.

As shown in FIG. 2, the casing 41 of the displacement portion 21 has a box shape extending along the roller axis direction. A mounting hole 41b that penetrates the mounting wall 41a is formed in the mounting wall 41a that is one side wall of the housing 41.

A bearing portion 42 is fixed to the inner surface of the housing 41. The bearing portion 42 divides the internal space of the housing 41 into a vacuum chamber 41c and an atmospheric chamber 41d over the entire length from one end to the other end of the housing 41 in the roller axis direction. The vacuum chamber 41c communicates with the internal space of the vacuum chamber 11 in a vacuum atmosphere via the movement hole 41b. The vacuum chamber 41c is an example inside the vacuum chamber, and the standby chamber 41d is an example outside the vacuum chamber.

The operating shaft 44 as a connecting member is passed through the bearing portion 42 along the displacement direction. A seal member 43 that is in close contact with the outer peripheral surface of the operating shaft 44 and the inner side surface of the bearing portion 42 is accommodated inside the bearing portion 42 in a state in which the bearing portion 42 can slide on the outer peripheral surface of the operating shaft 44. The seal member 43 suppresses the air from flowing between the vacuum chamber 41c and the air chamber 41d.

Inside the atmospheric chamber 41d, one end of the operating shaft 44 is connected to a shaft driving unit 45 that changes the position of the operating shaft 44 along the displacement direction. The shaft drive unit 45 includes, for example, a motor and a conversion mechanism that changes the rotational motion of the motor to a linear motion along the displacement direction and transmits the driving force of the motor to the operating shaft 44. For example, when the motor rotates in the forward direction, the position of the operating shaft 44 moves to one side along the displacement direction, and when the motor rotates in the reverse direction, the position of the operating shaft 44 moves in the displacement direction. Along the other side. At this time, since the shaft driving unit 45 is included in the atmospheric chamber 41d, even if the shaft driving unit 45 is driven to change the position of the operating shaft 44, the foreign matter generated by the driving of the shaft driving unit 45 remains in the vacuum chamber 41c. Through the vacuum chamber 11 is suppressed. Therefore, it is possible to suppress generation of particles inside the sputtering apparatus 10 as compared with the configuration in which the shaft driving unit 45 is disposed in the vacuum chamber 41c.

A connecting portion 46 is provided on the outer peripheral surface of the operating shaft 44 at the other end of the operating shaft 44 inside the vacuum chamber 41 c. The connecting portion 46 has a column shape extending along a direction orthogonal to the roller axial direction and the displacement direction. The upper end portion of the connecting portion 46 located on the side opposite to the operating shaft 44 is located in the moving hole 41b of the mounting wall 41a. The upper end portion of the connecting portion 46 moves along the displacement direction in the moving hole 41b with the movement of the operating shaft 44 described above.

On the mounting wall 41a of the housing 41, two magnetic circuits 25 extending along the roller axis direction are fixed with a space therebetween in the displacement direction. A plate-like displacement plate 51 extending along the roller axis direction is disposed on the mounting wall 41a. The length of the displacement plate 51 in the roller axis direction is substantially the same as the length of the housing 41 in the roller axis direction. In the displacement plate 51, two slits 51h extending along the displacement direction are formed penetratingly spaced from each other in the displacement direction. A magnetic circuit 25 is disposed inside each slit 51h. A connecting portion 46 is connected to the surface of the displacement plate 51 facing the casing 41. When the above-described shaft driving unit 45 drives the operating shaft 44, the driving force of the shaft driving unit 45 is transmitted to the displacement plate 51 via the operating shaft 44 and the connecting portion 46. The displacement plate 51 that receives the driving force of the shaft driving unit 45 is displaced along the displacement direction with respect to the housing 41. At this time, since the magnetic circuit 25 fixed to the housing 41 is disposed in the slit 51h of the displacement plate 51 to be displaced, the above-described displacement plate 51 is also along the displacement direction with respect to the magnetic circuit 25. Displace.

The displacement plate 51 is connected to three fixing members 52 each having a columnar shape extending along the roller axis direction. Each slit 51h is disposed between two fixing members 52 adjacent in the displacement direction. Further, one backing plate 23 having a plate shape extending along the roller axis direction is connected to two fixing members 52 adjacent in the displacement direction. That is, the two backing plates 23 are disposed on the three fixing members 52. A plate-like target 22 extending along the roller axis direction is fixed to each backing plate 23. An insulating floating shield 53 having a frame shape surrounding the edge of the target 22 is fixed on the fixing member 52.

Thus, the target device 20 includes the displacement plate 51, the fixing member 52, and the floating shield 53 in addition to the target 22, the backing plate 23, the target power supply 24, and the magnetic circuit 25. The members of the target device 20 other than the magnetic circuit 25 are operably connected to the displacement plate 51. For this reason, when the operating shaft 44 is driven, members of the target device 20 other than the target power supply 24 and the magnetic circuit 25 are displaced along the displacement direction.

Between the target device 20 and the film forming roller 33, three anodes 54 having a columnar shape extending along the roller axis direction, that is, the direction orthogonal to the transport direction of the sheet S are arranged. These anodes 54 are fixed to the vacuum chamber 11. One corresponding magnetic circuit 25 is located between two anodes 54 adjacent in the displacement direction. Both end portions of each anode 54 are fixed to the wall portion of the vacuum chamber 11. Thus, the anode 54 is disposed on the opposite side of the magnetic circuit 25 with respect to the cathode including the backing plate 23.

[Action of displacement part]
The operation of the displacement portion 21 will be described with reference to FIGS. 3 and 4, the conveyance direction of the sheet S is indicated by a white arrow. Further, the movement of the target device 20 in the same direction as the conveyance direction of the sheet S is set as the forward movement, and the movement of the target device 20 in the direction opposite to the conveyance direction of the sheet S is set as the backward movement.

As shown in FIG. 3, when the conveyance direction of the sheet S is the left direction in the left-right direction of the paper, and the target device 20 moves forward, the position of the operating shaft 44 moves to the left. Thereby, the displacement plate 51 connected to the operating shaft 44 by the connecting portion 46 moves leftward, and the backing plate 23 and the target 22 fixed to the displacement plate 51 via the fixing member 52 also move leftward. When the operating shaft 44 moves to the leftmost position, the target 22 also moves to the leftmost position. The position of the target 22 at this time is defined as the first position. On the other hand, the positions of the magnetic circuit 25 and the anode 54 are not changed.

Therefore, although the position of the target 22 with respect to the magnetic circuit 25 changes in the displacement direction, the position of the magnetic circuit 25 with respect to the anode 54 does not change. Further, the target 22 moves along the displacement direction, in other words, along the direction substantially orthogonal to the direction in which the anode 54, the target 22, and the magnetic circuit 25 are arranged. As a result, as compared with the configuration in which the magnetic circuit 25 moves relative to the anode 54, changes in the plasma state such as the plasma position and density on the surface of the target 22 can be suppressed even while the target device 20 is moving. Then, the surface of the target 22 is scanned under such a condition that the change in the plasma state is suppressed.

As shown in FIG. 4, when the conveyance direction of the sheet S is the left direction in the left-right direction of the paper surface, and the target device 20 moves backward, the position of the operating shaft 44 moves to the right. Thereby, contrary to when the target device 20 moves forward, the displacement plate 51, the backing plate 23, and the target 22 move in the right direction. When the operating shaft 44 moves to the rightmost position, the target 22 also moves to the rightmost position. The position of the target 22 at this time is defined as the second position. On the other hand, the positions of the magnetic circuit 25 and the anode 54 are not changed.

Therefore, as in the case where the target device 20 moves forward, the position of the target 22 relative to the magnetic circuit 25 changes in the displacement direction, but the position of the magnetic circuit 25 relative to the anode 54 does not change. Thus, although the position of the target 22 with respect to the magnetic circuit 25 changes in both directions along the displacement direction by the swing of the target 22, the position of the magnetic circuit 25 with respect to the anode 54 does not change.

Further, as in the case where the target device 20 moves forward, the target 22 moves in a direction substantially orthogonal to the direction in which the anode 54, the target 22, and the magnetic circuit 25 are arranged. As a result, the state change of the plasma formed on the surface of the target 22 can be suppressed while the target device 20 is moving. The surface of the target 22 is scanned in the direction opposite to that in the forward movement under such a state that the change in the plasma state is suppressed.

Thus, since the change in the state of the plasma formed on the surface of the target 22 is suppressed, the change in the state of the sputtered particles emitted from the target 22 toward the sheet S is also suppressed. In particular, when the target 22 is sputtered in a plasma containing oxygen gas, if the position of the magnetic circuit 25 with respect to the anode 54 changes, the reactivity of oxygen changes due to the strength of the plasma. Therefore, since the amount of oxygen in the ITO film formed on the sheet S also changes, in addition to the thickness of the ITO film formed on the sheet S, the composition of the ITO film also changes. On the other hand, since the change in the plasma state during sputtering of the target 22 is suppressed, not only the thickness of the ITO film but also the amount of oxygen in the ITO film can be suppressed from varying in the plane of the sheet S. .

In addition, since the position of the magnetic circuit 25 is fixed, the position of the supply port 11a for supplying oxygen gas into the vacuum chamber 11 and the magnetic circuit 25 does not change. Here, even if the flow rate of the oxygen gas supplied from the reaction gas supply unit 13 is constant, if the position in the vacuum chamber 11 changes, depending on the distance from the supply port 11a, the distance from the exhaust port 11b, etc. The state of oxygen gas also changes. Therefore, in the configuration in which the position of the magnetic circuit 25 is changed, the position of the magnetic circuit 25, that is, the state of oxygen gas at the position where plasma is formed is different. Therefore, when the position of the magnetic circuit 25 changes, the state of oxygen in the plasma also changes. On the other hand, in the sputtering apparatus 10, since the position of the magnetic circuit 25 with respect to the supply port 11a does not change, it is possible to suppress a change in the state of oxygen in the plasma. As a result, the amount of oxygen in the ITO film becomes difficult to change.

The anode 54 is located between the target 22 and the sheet S. For this reason, in the configuration in which the position of the magnetic circuit 25 with respect to the anode 54 is changed, the shadow effect by the anode 54 is also changed by changing the plasma state. Note that the shadow effect is an effect in which the sputter particles do not reach the film formation target because the member such as the anode 54 is positioned in the flight stroke of the sputter particles emitted from the target 22. On the other hand, in the configuration in which the position of the magnetic circuit 25 with respect to the anode 54 does not change, the shadow effect due to the anode 54 is suppressed from changing, and therefore in the plane of the sheet S compared to the configuration in which the position of the magnetic circuit with respect to the anode 54 changes. Variation in film thickness is suppressed.

Furthermore, the anode 54 extends in a direction perpendicular to the conveying direction of the sheet S. Here, in the configuration in which the anode 54 extends along the conveyance direction of the sheet S, when a shadow effect is generated by the anode 54, the anode 54 overlaps the anode 54 in the normal direction of the sheet S in the plane of the sheet S. Sputtered particles are difficult to reach only in the vicinity. On the other hand, in the sputtering apparatus 10, even when the shadow effect is caused by the anode 54, the anode 54 extends in a direction perpendicular to the conveying direction of the sheet S. Unevenness in the plane of S can be suppressed. As a result, the variation in the film thickness in the surface of the sheet S is suppressed as compared with the configuration in which the anode extends in the transport direction.

Also, on the surface of the target 22, the bias of the portion exposed to the plasma is suppressed as compared with the configuration in which the position of the target 22 with respect to the magnetic circuit 25 does not change. For this reason, the bias of the erosion area | region in the surface of the target 22 is achieved. Further, in the configuration in which the position of the magnetic circuit 25 with respect to the anode 54 is changed, the smaller the distance between the anode 54 and the magnetic circuit 25, the higher the plasma density and the more the target 22 is sputtered. On the other hand, the greater the distance between the anode 54 and the magnetic circuit 25, the lower the plasma density and the smaller the amount of sputtering of the target 22. Therefore, in the configuration in which the position of the magnetic circuit 25 with respect to the anode 54 is changed, the erosion on the surface of the target 22 is biased. On the other hand, in the sputtering apparatus 10, since such a change in plasma density does not occur, erosion unevenness on the surface of the target 22 can be suppressed.

Incidentally, the higher the moving speed of the sheet S, the shorter the time required for the sheet S to pass through the plasma generation region. Therefore, the plasma distribution is reflected in the thickness distribution of the ITO film formed on the sheet S. It becomes easy to be done. Therefore, the moving speed of the sheet S has to be increased as the thickness of the film to be formed is thinner. For example, when the thickness of the ITO film formed on the sheet S is 10 nm or more and 20 nm or less, the moving speed of the sheet S, that is, the time required for the sheet S to pass through the plasma generation region is The distribution is increased to the extent that it is reflected in the thickness of the ITO film formed on the sheet S. In this respect, with the above-described configuration, it is possible to suppress variation in the thickness of the ITO film even when the thickness of the ITO film is reduced as compared with the configuration in which the position of the magnetic circuit is changed.

In the configuration where the position of the magnetic circuit 25 with respect to the anode 54 changes, the state of plasma on the surface of the target 22 changes. When the distance between the anode 54 and the magnetic circuit 25 is small, the film thickness increases. On the other hand, when the distance between the anode 54 and the magnetic circuit 25 is large, the film thickness decreases. For this reason, the thickness of the film varies, that is, irregularities are formed in the film. Therefore, the sputtering apparatus 10 is provided with two or more target devices, and the film forming region of each target device is synchronized with the sheet S, thereby reducing variations in film thickness by offsetting the unevenness of the film. There are attempts to do it.

However, while the magnetic circuit 25 moves forward and backward, the sheet S is conveyed only in one conveyance direction. Therefore, when the moving speed of the magnetic circuit 25 is kept constant between forward movement and backward movement, and the conveyance speed of the sheet S is kept constant, the sheet S and the magnetic circuit 25 are in the same direction. The relative speed when the magnetic circuit 25 moves in the direction opposite to that of the sheet S is larger than the relative speed when moved. As described above, the length of the sheet S formed per unit time differs between when the magnetic circuit 25 moves forward and when it moves backward. For this reason, even if the region formed by one cathode and the region formed by another cathode are synchronized, the thickness of the film varies and the film remains uneven.

On the other hand, in the configuration in which the position of the magnetic circuit 25 with respect to the anode 54 does not change, the variation in film thickness as described above can be suppressed by suppressing the change in the plasma state. Therefore, even with a configuration including only one target device 20, it is difficult to form a distribution in the film thickness of the sheet S.

Further, since the change of the plasma state formed in the sputtering apparatus 10 can be suppressed, the temperature distribution in the surface of the sheet S can be suppressed, and the occurrence of distortion in the sheet S can be suppressed. Thereby, the load by the heat | fever with respect to the sheet | seat S is suppressed. Moreover, also in the various structural members which comprise the sputter apparatus 10, like the sheet | seat S, the temperature distribution in a structural member is suppressed and it can suppress that a distortion arises in a structural member. As a result, the durability of the constituent members is increased.

As described above, according to one embodiment of the sputtering apparatus of the present disclosure, the effects listed below can be obtained.

(1) During sputtering of the target 22, even if the position of the magnetic circuit 25 with respect to the target 22 changes, the position of the magnetic circuit 25 with respect to the anode 54 does not change. For this reason, it is possible to suppress a change in the state of plasma formed on the surface of the target 22. Therefore, variation in the thickness of the indium tin oxide film formed on the sheet S can be suppressed. In addition, the position of the magnetic circuit 25 with respect to the deposition preventing plate 26 that functions as an anode as well as the anode 54 does not change. For this reason, it is possible to suppress a change in the state of plasma formed on the surface of the target 22.

(2) Since the moving direction of the target 22 intersects with the direction in which the anode 54, the target 22, and the magnetic circuit 25 are arranged, the target 22 is in contrast to the plasma formed between the anode 54 and the magnetic circuit 25. The surface of is scanned. Therefore, the erosion region on the surface of the target 22 is widened, so that the utilization efficiency of the target is increased.

(3) Since the anode 54 extends in a direction perpendicular to the conveyance direction of the sheet S, the film thickness uniformity in the film formation target is improved by the shadow effect of the anode 54 as compared with the configuration in which the anode 54 extends in the conveyance direction of the sheet S. Lowering is suppressed.

(4) By suppressing the change of the plasma state, it is possible to suppress the oxygen reactivity from changing due to the strength of the plasma. For this reason, it can suppress that the quantity of oxygen in the indium tin oxide film | membrane formed in the sheet | seat S changes.

(5) Even if the shaft driving unit 45 operates to change the position of the operating shaft 44, it is possible to suppress the scattering of foreign matter accompanying the operation of the shaft driving unit 45 in the vacuum atmosphere.

In addition, the said embodiment can be implemented by changing suitably as follows.

The sputter apparatus 10 may include three or more sets of the target apparatus 20 and the displacement unit 21 or may include only one set.

The target device 20 may include three or more sets of the target 22 and the backing plate 23, or may include only one set. For example, when only one set of the target 22 and the backing plate 23 is provided, the target 22 may be positioned between the two anodes 54 arranged along the displacement direction.

-Only one magnetic circuit 25 may be provided on the opposite side of the backing plate 23 from one target 22, or a plurality of magnetic circuits 25 may be provided.

The anode 54 may intersect at an angle other than orthogonal to the sheet S conveyance direction. Even in such a configuration, the shadow effect range of the anode 54 is expanded in the plane as compared with the configuration in which the anode 54 extends along the transport direction. Therefore, it is possible to suppress the variation in the thickness of the film.

The target 22 may be configured to move in a direction that intersects the direction in which the anode 54, the target 22, and the magnetic circuit 25 are arranged at an angle other than orthogonal. Even in such a configuration, the surface of the target 22 is scanned with respect to the plasma, so that the erosion region of the target 22 can be expanded as compared with the configuration in which the target 22 is fixed. The target 22 may be configured to move along the direction in which the anode 54, the target 22, and the magnetic circuit 25 are arranged. Even with such a configuration, since the magnetic circuit 25 is not moved with respect to the anode 54, it is possible to suppress a change in the state of plasma formed on the surface of the target. Further, the erosion region is broadened on the surface of the target 22 as compared with the configuration in which the target 22 is fixed.

The position of the target 22 may be alternately changed at the other two positions between the first position and the second position.

The movement of the target 22 in the conveyance direction of the sheet S may be set as the backward movement, and the movement of the target 22 in the direction opposite to the conveyance direction of the sheet S may be set as the forward movement.

The target 22 may be moved in a direction that intersects the conveyance direction of the sheet S. That is, the displacement direction of the target device 20 may intersect with the tangential direction of the outer peripheral surface of the film forming roller 33 facing the target device 20. Even with such a configuration, if the position of the magnetic circuit 25 with respect to the anode 54 does not change, a change in the state of the plasma formed during sputtering of the target 22 can be suppressed. Therefore, it is possible to suppress variations in film thickness in the sheet S.

The anode 54 may be installed in the magnetic circuit 25 instead of being arranged on the opposite side to the magnetic circuit 25 with respect to the cathode. Even with such a configuration, since the position of the magnetic circuit 25 with respect to the anode does not change, a change in the state of plasma formed on the surface of the target 22 can be suppressed.

The sputter gas may be a rare gas other than argon gas, that is, any of neon gas, helium gas, krypton gas, and xenon gas.

The reaction gas may be a gas containing oxygen other than oxygen gas, such as H ₂ O. In short, any gas that can generate an oxidation source that supplements oxygen of indium tin oxide may be used.

・ Indium tin oxide may be sputtered only by sputtering gas.

The main component of the target may not be indium tin oxide, and may be, for example, an inorganic material such as silicon, niobium and zirconium, or an inorganic compound such as silicon oxide and silicon nitride. Good. The main component of the target may be a conductive material or an insulator. In short, regardless of the main component of the target, it is possible to obtain the effect of the configuration in which the position of the magnetic circuit 25 with respect to the anode 54 does not change.

When the main component of the target 22 is a material other than indium tin oxide, a gas other than oxygen gas, such as nitrogen gas or ammonia gas, may be used as the reaction gas.

The wall portion that divides the inside of the displacement portion 21 into the vacuum chamber 41c and the atmospheric chamber 41d is not limited to the bearing portion 42, and the wall portion may not extend over the entire roller axis direction of the housing 41. In short, the wall portion may be configured to partition the space including the moving hole 41b, the connecting portion 46, and the end of the operating shaft 44 on the connecting portion 46 side from the space where the shaft driving portion 45 is arranged. For example, the wall portion surrounds only the moving hole 41b, the connecting portion 46, and the end portion of the operating shaft 44 on the connecting portion 46 side, so that the space where the shaft driving portion 45 is arranged in the housing 41 is partitioned. The structure which forms the made vacuum chamber may be sufficient.

The inside of the displacement unit 21 may not be partitioned into the vacuum chamber 41c and the atmospheric chamber 41d, and the shaft driving unit 45 may be disposed in a vacuum chamber connected to the internal space of the vacuum chamber 11.

The conveyance of the sheet S may be performed intermittently when the target 22 is being sputtered, or the sputtering of the target 22 may be performed intermittently when the sheet S is being conveyed. Moreover, both such intermittent sputtering and intermittent conveyance may be performed.

In the sputtering apparatus 10, the sheet conveying unit 30 that conveys the sheet S may be omitted, and the position of the sheet S may be fixed in the sputtering apparatus 10 when the target 22 is sputtered. Even if it is such a structure, the effect by the state of a plasma not changing can be acquired.

The film formation target may not be the sheet S, but may be a substrate formed of various materials. In this case, the sputtering apparatus may be configured to convey the film formation target when sputtering the target 22 or may be configured to fix the film formation target during sputtering.

DESCRIPTION OF SYMBOLS 10 ... Sputter apparatus, 10C ... Control apparatus, 11 ... Vacuum tank, 11a ... Supply port, 11b ... Exhaust port, 12 ... Sputter gas supply part, 13 ... Reaction gas supply part, 14 ... Exhaust part, 20 ... Target apparatus, 21 DESCRIPTION OF SYMBOLS ... Displacement part, 22 ... Target, 23 ... Backing plate, 24 ... Target power supply, 25 ... Magnetic circuit, 26 ... Deposition plate, 30 ... Sheet conveyance part, 31 ... Delivery roller, 32 ... Winding roller, 33 ... Film formation Roller, 34a, 34b ... Delivery guide roller, 35a, 35b ... Take-up guide roller, 41 ... Housing, 41a ... Mounting wall, 41b ... Moving hole, 41c ... Vacuum chamber, 41d ... Air chamber, 42 ... Bearing part, 43 DESCRIPTION OF SYMBOLS ... Seal member, 44 ... Actuation shaft, 45 ... Shaft drive part, 46 ... Connection part, 51 ... Displacement plate, 51h ... Slit, 52 ... Fixing member, 53 ... Flow Ingushirudo, 54 ... anode, S ... sheet.

Claims

An anode,
A cathode including a plate-shaped target;
A magnetic circuit having a fixed position relative to the anode;
A power source for supplying power to the cathode;
Without changing the position of the magnetic circuit with respect to the anode, a displacement unit that changes the position of the target with respect to the magnetic circuit by swinging the target;
And a controller that controls the driving of the power source and the displacement unit to sputter the target at different positions.
The anode is
Disposed on the opposite side of the cathode from the magnetic circuit;
The displacement portion is
The sputtering apparatus according to claim 1, wherein the position of the target is changed along a direction intersecting a direction in which the anode, the target, and the magnetic circuit are arranged.
A transport unit that transports the film formation target so as to pass through the region facing the target;
The sputtering apparatus according to claim 2, wherein the anode extends in a direction that intersects a transport direction of the film formation target.
4. The sputtering apparatus according to claim 1, wherein the displacement unit alternately changes the position of the target between a first position and a second position.
The main component of the target is indium tin oxide,
The sputtering apparatus according to any one of claims 1 to 4, further comprising a gas supply unit that supplies a sputtering gas and an oxygen gas between the cathode and the anode.
A vacuum chamber for accommodating the target and the film formation target;
The displacement portion is
A drive unit;
A connecting member that is connected to the driving unit and the cathode and changes a position of the cathode by a driving force of the driving unit;
The connecting member is arranged across the vacuum chamber and outside the vacuum chamber,
The sputtering apparatus according to any one of claims 1 to 5, wherein the driving unit is disposed outside the vacuum chamber.