TW201425623A - Sputtering apparatus - Google Patents

Abstract

This sputtering apparatus is provided with: an anode (54); a cathode (22, 23) that includes a board-shaped target (22); a magnetic circuit (25) having the position thereof fixed with respect to the anode (54); a power supply that supplies power to the cathode; a displacement unit (21) that changes, by swinging the target (22), the position of the target with respect to the magnetic circuit (25) without changing the position of the magnetic circuit (25) with respect to the anode (54); and a control unit (10C) that sputters the target (22) at positions different from each other by controlling drive of the power supply and drive of the displacement unit (21).

Description

Sputtering device

The technique disclosed in the present invention relates to a sputtering apparatus that forms a film with respect to a film formation object to be conveyed.

In the formation of the electrode sheet for a touch panel, a wound film forming apparatus is used which forms a film with respect to the wound sheet (see, for example, Patent Document 1). One of the thin films formed on the electrode sheets contains an indium tin oxide film, and as a device for forming a wound film forming apparatus for forming an indium tin oxide film, a sputtering apparatus having a magnetic circuit is known. In a sputtering apparatus, when sputtering a target, a device for changing the position of the magnetic circuit with respect to the target is known. In such a sputtering apparatus, the state of the stray magnetic field formed on the surface of the target can be changed by changing the position of the magnetic circuit.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-19246

However, if the position of the magnetic circuit to the target is changed, generally, the position of the magnetic circuit to the positive electrode also changes. At this time, if the position of the magnetic circuit to the positive electrode is changed, the state of the plasma formed by the target surface also changes, so the state of the sputtered particles released from the target changes due to the position of the magnetic circuit. In addition, the film-forming object is not thin, or even if the formed film is not indium tin oxide film, These problems occur.

The technology of the present disclosure is directed to providing a sputtering apparatus that suppresses a change in the state of the plasma formed on the surface of the target.

In one aspect of the sputtering apparatus of the present disclosure, there is provided an anode, a cathode including a plate-shaped target, a magnetic circuit fixed to a position of the anode, a power source for supplying electric power to the cathode, and a displacement portion. The position of the magnetic circuit to the anode is not changed, and the position of the magnetic circuit is changed by the shaking of the target; and the control unit controls the driving of the power source and the driving of the displacement portion to be different from each other. The target is sputtered at the location.

In this configuration, at the time of target sputtering, even if the position of the magnetic circuit to the target is changed, the position of the magnetic circuit to the anode does not change. Therefore, the change in the state of the plasma formed on the surface of the target can be suppressed.

In the above aspect, it is preferable that the anode is disposed on the opposite side of the magnetic circuit to the cathode. In this case, the displacement portion is preferably configured such that the anode, the target, and the magnetic circuit change the position of the target along the parallel direction and the intersecting direction.

In this configuration, since the direction in which the target moves is intersected with the direction in which the anode, the target, and the magnetic circuit are juxtaposed, the surface of the target is scanned with respect to the plasma forming region between the anode and the magnetic circuit. Therefore, at the target surface, the portion exposed to the plasma is changed. Therefore, by suppressing the change in the state of the plasma while the erosion region of the target surface is enlarged, the utilization efficiency of the target can be improved.

In the above aspect, the sputtering apparatus preferably further includes a conveyance unit that conveys a film formation target so as to be able to pass through a region facing the target. In this case, it is preferred that the anode extends in a direction crossing the conveyance direction of the film formation object.

In this configuration, as compared with a configuration in which the anode is extended in the conveyance direction of the film formation object, it is possible to suppress the film thickness uniformity in the surface of the film formation target from being lowered due to the shielding effect of the anode.

In the above aspect, preferably, the displacement portion alternately changes the position of the target between the first position and the second position.

According to this configuration, since the position of the target is alternately changed between the first position and the second position, uniformity of the erosion region on the target surface can be achieved.

In the above aspect, the main component of the target is preferably indium tin oxide. In this case, the sputtering apparatus further includes a gas supply unit that supplies a sputtering gas and oxygen between the cathode and the anode.

According to this configuration, by suppressing the change in the plasma state, it is possible to suppress the change in oxygen reactivity due to the strength of the plasma, so that the change in the amount of oxygen formed in the indium tin oxide film to be formed can be suppressed.

In the above aspect, the sputtering apparatus preferably further includes a vacuum chamber that accommodates the target and the film formation object. In this case, it is preferable that the displacement portion includes a driving portion, and a connecting member that is connected to the driving portion and the cathode, and that the cathode position is changed by a driving force of the driving portion. Further, it is preferable that the connecting member is disposed outside the vacuum chamber and in the vacuum chamber, and the driving portion is disposed outside the vacuum chamber.

In this configuration, the drive unit is disposed in a space partitioned from a vacuum environment in which the target is sputtered. Therefore, even if the driving unit operates to change the position of the cathode, scattering of foreign matter accompanying the operation of the driving unit generated in the vacuum environment can be suppressed.

10‧‧‧ Sputtering device

10C‧‧‧Control device

11‧‧‧vacuum tank

11a‧‧‧ supply port

11b‧‧‧Exhaust port

12‧‧‧Sputter gas supply department

13‧‧‧Reactive Gas Supply Department

14‧‧‧Exhaust Department

20‧‧‧ target device

21‧‧‧Transformation Department

22‧‧‧ Target

23‧‧‧Support plate

24‧‧‧ Target power supply

25‧‧‧Magnetic circuit

26‧‧‧Anti-deposition plate

30‧‧‧Sheet Transport Department

31‧‧‧Feed roller

32‧‧‧ winding roller

33‧‧‧film roll

34a, 34b‧‧‧feeding guide rolls

35a, 35b‧‧‧ winding guide roller

41‧‧‧ Shell

41a‧‧‧ equipped wall

41b‧‧‧ moving holes

41c‧‧‧vacuum room

41d‧‧‧Atmospheric room

42‧‧‧ Bearing Department

43‧‧‧ Sealing members

44‧‧‧Starting shaft

45‧‧‧Axis drive department

46‧‧‧Connecting Department

51‧‧‧Displacement board

51h‧‧‧slit

52‧‧‧Fixed components

53‧‧‧Floating shade

54‧‧‧Anode

S‧‧‧Sheet

The first figure shows a configuration of a device constructed in a vacuum chamber of one embodiment of a sputtering apparatus in the present disclosure.

The second figure is a cross-sectional view showing the cross-sectional structure of the target device and the sectional structure of the displacement portion.

The third diagram shows the action diagram of the state in which the target and the cathode are moved.

The fourth diagram shows the action diagram of the state in which the target and the cathode are moved.

An embodiment in which the technology of the present disclosure has been embodied will be described with reference to the first to fourth figures.

[Composition of sputtering device]

The configuration of the sputtering apparatus will be described with reference to the first figure.

As shown in the first figure, the sputtering apparatus 10 includes a vacuum chamber 11. The vacuum chamber 11 has a box shape and extends in a direction orthogonal to the plane of the paper. In the vacuum chamber 11, a supply port 11a and an exhaust port 11b are formed, which penetrate the wall portion of the vacuum chamber 11. The supply port 11a is connected to a sputtering gas supply unit 12 that supplies a sputtering gas in the vacuum chamber 11, and a reaction gas supply unit 13 that supplies a reaction gas. The sputtering gas supply unit 12 and the reaction gas supply unit 13 may be connected to one pipe extending from the supply port 11a toward the outside of the vacuum chamber 11, or may be connected to the supply port 11a independently of each other. The sputtering gas supply unit 12 supplies a rare gas such as argon gas into the vacuum chamber 11, and the reaction gas supply unit 13 supplies oxygen gas into the vacuum chamber 11.

The exhaust port 14 is connected to the exhaust port 11b, and the inside of the vacuum chamber 11 is exhausted. The exhaust unit 14 is constituted by, for example, a vacuum pump such as a turbo-molecular pump.

The displacement portions 21 are attached to the mutually opposing wall surfaces of the inner wall surfaces of the vacuum chambers 11, and extend along a direction orthogonal to the plane of the paper, and the target device 20 is attached to each of the displacement portions 21. Although each displacement The portion 21 is fixed at a different position in the vacuum chamber 11, and is connected to a different target device 20 (displacement target), but the configuration is the same.

Each target device 20 is provided with a cathode, the cathode comprising: a target 22, which will indium tin oxide (ITO) as a main component; and a support plate 23 which fixes the target 22. Further, the ITO is 95% by mass or more, preferably 99% by mass or more, of the material forming the target 22. The surface opposite to the support plate 23 in the target 22 is set as the surface (sputter surface) of the target 22.

A target power source 24 is connected to the support plate 23, and the target power source 24 supplies power to the target 22. The target device 20 further includes a magnetic circuit 25 disposed between the support plate 23 and the displacement portion 21 and forming a magnetic field on the surface of the target 22. Above and below the displacement portion 21, a deposition prevention plate 26 is attached, and each of the deposition prevention plates 26 has a rectangular plate shape extending in a direction orthogonal to the plane of the paper. Further, the anti-deposition plate 26 functions as an anode.

A sheet conveying portion 30 that transports the sheet S is provided between the two target devices 20. Sheet moving The transport unit 30 includes a feed roller 31, a winding roller 32, a film formation roller 33, feed guide rollers 34a and 34b, and winding guide rollers 35a and 35b. Each of the rolls 31 to 33, 34a, 34b, 35a, and 35b has a columnar shape extending in a direction orthogonal to the plane of the paper. Further, in the direction orthogonal to the plane of the paper, the direction in which the central axes of the respective rollers 31 to 33, 34a, 34b, 35a, 35b extend is set as the roller axis direction. Both ends of the rolls 31 to 33, 34a, 34b, 35a, and 35b are supported by the inner wall surface of the vacuum chamber 11 in a rotatable state of the rolls 31 to 33, 34a, 34b, 35a, and 35b.

Among them, the feed roller 31, the winding roller 32, the feed guide rollers 34a, 34b, and the winding guide The dancer rolls 35a and 35b are disposed above the upper side anti-deposition plate 26. The film formation roller 33 is disposed at a position lower than the deposition preventing plate 26 on the upper side, and is disposed between the two target devices 20 in the vacuum chamber 11.

From the feed roller 31, a sheet S before film formation is fed, which is wound around the feed roller 31. On the outer peripheral surface of the winding roller 32, a film S after film formation is wound. The two feed guide rolls 34a and 34b are disposed between the feed roller 31 and the film formation roller 33, and the two winding guide rollers 35a and 35b are disposed between the winding roller 32 and the film formation roller 33.

The sheet S pulled out from the feed roller 31, in accordance with the feed guide rollers 34a, 34b The circumferential surface, the outer circumferential surface of the film forming roller 33, the outer circumferential surface of the winding guide rolls 35a and 35b, and the outer circumferential surface of the winding roller 32 are sequentially extended.

In the sputtering apparatus 10, a control device 10C is mounted as a control unit for controlling The sputtering gas supply unit 12, the reaction gas supply unit 13, the exhaust unit 14, the displacement unit 21, the target power source 24, and the sheet conveying unit 30 are driven. The control device 10C outputs a supply start signal and a supply stop signal to the respective gas supply units 12 and 13, which start the supply of gas from the respective gas supply units 12 and 13, and the supply stop signal is used to stop Gas supply from each of the gas supply units 12 and 13 is performed. Further, the control device 10C outputs a drive start signal and a drive stop signal to the exhaust unit 14 for starting the drive of the exhaust unit 14, and the drive stop signal for stopping the drive of the exhaust unit 14. .

Moreover, the control device 10C outputs the change start signal and the change stop signal to the change In the bit portion 21, the change start signal starts the change of the cathode position, and the change stop signal stops the change of the cathode position. Further, the control device 10C outputs a supply start signal and a supply stop signal to each of the target power sources 24 for starting the supply of power from the respective target power sources 24, and the supply stop signal for stopping the supply of the respective target power sources 24. Power supply. Moreover, the control device 10C outputs a conveyance start signal and a conveyance stop signal to the sheet conveyance unit 30 for starting the conveyance of the sheet S by the sheet conveyance unit 30, and the conveyance stop signal is used for the conveyance stop signal. The sheet S conveyance is stopped.

In the sputtering apparatus 10, an ITO film is formed on the sheet S by sputtering of the target 22. At the time of formation of the ITO film, first, the control device 10C outputs a drive start signal to the exhaust unit 14, and the exhaust unit 14 exhausts the inside of the vacuum chamber 11. Next, the control device 10C outputs a supply start signal to the sputtering gas supply unit 12 and the reaction gas supply unit 13. Thereby, the sputtering gas supply unit 12 supplies argon gas into the vacuum chamber 11, and the reaction gas supply unit 13 supplies oxygen gas into the vacuum chamber 11. Further, the inside of the vacuum chamber 11 is brought into a vacuum environment by the driving of the sputtering gas supply unit 12, the reaction gas supply unit 13, and the exhaust unit 14.

Next, the control device 10C outputs a supply start signal to each target power source 24, each target The power source 24 supplies electric power to the support plate 23. Thereby, in the vacuum chamber 11, plasma is generated from argon gas and oxygen gas, and positive ions in the plasma collide with the target 22. As a result, by releasing the particles of ITO from the target 22, the particles of ITO are deposited on the surface of the sheet S together with the oxidation source in the plasma, and the ITO film can complement the deficiency of the oxygen atoms while being formed on the surface of the sheet S.

Further, when the sputtering is performed, the control device 10C outputs a conveyance start letter. In the sheet conveying unit 30, the winding roller 32 is rotated in the clockwise direction in the left-right direction of the paper surface, and the sheet S is wound around the outer circumferential surface of the winding roller 32 at a predetermined speed. Thereby, the sheet S before the film formation fed from the feed roller 31 can be carried by rotating the other rolls. The sheet S to be conveyed is formed to have a predetermined thickness, for example, an ITO film of 10 nm or more and 20 nm or less is formed.

The sheet S wound around the outer peripheral surface of the film forming roller 33 faces the surface of the target 22 At the time, most of the ITO film is formed on the sheet S. Next, the film forming roller 33 conveys the sheet S as indicated by the white black frame arrow in the first drawing. That is, the sheet S is conveyed in the circumferential direction of the film forming roller 33 so as to pass through a region facing the surface of the target 22. The circumferential direction is set as the sheet S when the target 22 is sputtered. Carrying direction.

Further, when sputtering is performed, the control device 10C outputs a change start signal to each change. Bit portion 21. Thereby, the components of the target device 20 other than the target power source 24 and the magnetic circuit 25 are moved relative to the magnetic circuit 25. At this time, the wiring direction of the outer peripheral surface of the film forming roller 33 facing the target device 20 is set as the displacement direction. That is, the displacement direction is set in parallel with respect to the surface of the target 22. Next, the target power source 24 and the components of the target device 20 other than the magnetic circuit 25 reciprocate in the displacement direction with respect to the magnetic circuit 25. Thereby, the position of the target 22 provided in the target device 20 is repeatedly reciprocated along the displacement direction, that is, the target 22 is shaken.

[Composition of the displacement unit and the target device]

The configuration of the displacement portion 21 and the target device 20 will be described with reference to the second diagram.

As shown in the second figure, the outer casing 41 of the displacement portion 21 has a box shape extending in the roller axis direction. The mounting wall 41a on the side wall of one of the outer casings 41 is formed with a moving hole 41b penetrating the mounting wall 41a.

A bearing portion 42 is fixed to the inner side surface of the outer casing 41. Bearing portion 42, on the roller side The internal space of the outer casing 41 is divided into a vacuum chamber 41c and an air chamber 41d toward the entire end of the outer casing 41 to the other end. The vacuum chamber 41c communicates with the internal space of the vacuum chamber 11 in a vacuum environment via the moving hole 41b. Further, the vacuum chamber 41c is an example of a vacuum chamber, and the standby chamber 41d is an example of a vacuum chamber.

In the bearing portion 42, the starting shaft 44 as a connecting member is passed along the displacement direction Over. Inside the bearing portion 42, a sealing member 43 is housed in a slidably connected outer peripheral surface of the starter shaft 44, and is in close contact with the outer peripheral surface of the starter shaft 44 and the inner side surface of the bearing portion 42. The sealing member 43 can suppress the circulation of the atmosphere between the vacuum chamber 41c and the air chamber 41d.

Inside the atmospheric chamber 41d, at one end of the starting shaft 44, a shaft drive is connected Portion 45, which changes the position of the starter shaft 44 along the direction of displacement. The shaft drive unit 45 is constituted, for example, by a motor, a change mechanism that changes the rotational motion of the motor into a linear motion along the displacement direction, and transmits the drive force of the motor to the start shaft 44. Next, for example, by rotating the motor in the positive direction, the position of the starter shaft 44 is moved to one side along the displacement direction, and the motor is rotated in the reverse direction, thereby causing the position of the starter shaft 44 to be displaced. The direction moves toward the other side. At this time, since the shaft drive unit 45 is included in the air chamber 41d, in order to change the position of the start shaft 44, even if the shaft drive unit 45 is driven, it is possible to suppress foreign matter generated by the drive of the shaft drive unit 45 from entering the vacuum through the vacuum chamber 41c. Inside the slot 11. Therefore, it is possible to suppress generation of particles inside the sputtering apparatus 10 as compared with a configuration in which the shaft driving unit 45 is disposed in the vacuum chamber 41c.

Inside the vacuum chamber 41c, at the other end of the starter shaft 44, the connecting portion 46 is made It is disposed on the outer peripheral surface of the starter shaft 44. The connecting portion 46 has a columnar shape that extends in a direction orthogonal to the roll axis direction and the displacement direction. The upper end portion of the connecting portion 46 located at the position opposite to the start shaft 44 is located at the position of the moving hole 41b of the mounting wall 41a. The upper end portion of the connecting portion 46 moves in the displacement direction in the moving hole 41b in accordance with the movement of the above-described starting shaft 44.

On the mounting wall 41a of the outer casing 41, two magnetic electric wires extending in the roller axis direction The roads 25 are fixed at intervals in the direction of displacement. Further, a displacement plate 51 is disposed on the mounting wall 41a, and has a plate shape extending in the roller axis direction. The length of the displacement plate 51 in the roller axis direction is substantially the same as the length of the outer casing 41 in the roller axis direction. In the displacement plate 51, two slits 51h extending in the displacement direction are formed to penetrate each other at intervals in the displacement direction. A magnetic circuit 25 is disposed inside each slit 51h. A connecting portion 46 is connected to the surface of the displacement plate 51 facing the outer casing 41. When the shaft drive unit 45 drives the starter shaft 44, the driving force of the shaft drive unit 45 is transmitted to the displacement plate 51 via the starter shaft 44 and the connecting portion 46. Bearing shaft drive unit 45 The displacement plate 51 of the driving force is displaced in the displacement direction with respect to the outer casing 41. At this time, since the magnetic circuit 25 fixed to the casing 41 is disposed in the slit 51h of the displacement plate 51, the displacement plate 51 changes along the displacement direction with respect to the magnetic circuit 25. Bit.

In the displacement plate 51, three fixings that extend in a column shape along the roller axis direction are connected Member 52. In the displacement direction, each slit 51h is disposed between the adjacent two fixing members 52. Further, a pair of support members 23 are connected to the two fixing members 52 adjacent to each other in the displacement direction, and are extended in a plate shape along the roller axis direction. That is, two support plates 23 are disposed on the three fixing members 52. A plate-shaped target 22 extending in the roller axis direction is fixed to each of the support plates 23. An insulating floating shield 53 which is a frame shape surrounding the edge of the target 22 is fixed to the fixing member 52.

Thus, the target device 20, in addition to the target 22, the support plate 23, the target power source 24, and the magnetic battery The road 25 further includes a displacement plate 51, a fixing member 52, and a floating shield 53. Next, members of the target device 20 other than the magnetic circuit 25 are operatively coupled to the displacement plate 51. Therefore, when the starter shaft 44 is driven, the components of the target device 20 other than the target power source 24 and the magnetic circuit 25 are displaced in the displacement direction.

Between the target device 20 and the film forming roller 33, three anodes 54 are disposed, which are along the roller The axial direction, that is, the direction orthogonal to the conveying direction of the sheet S, is formed in a cylindrical shape. The anodes 54 are fixed to the vacuum chamber 11. In the displacement direction, between the adjacent two anodes 54, at the position of the corresponding one of the magnetic circuits 25. Both end portions of the anodes 54 are fixed to the wall portion of the vacuum chamber 11. In this manner, the anode 54 is disposed on the opposite side of the magnetic circuit 25 with respect to the cathode including the support plate 23.

[The role of the displacement part]

The action of the displacement portion 21 will be described with reference to the third and fourth figures. In addition, in the third and fourth In the figure, the conveyance direction of the sheet S is indicated by a white black frame arrow. Further, the movement of the target device 20 in the same direction as the conveyance direction of the sheet S is set to move, and the movement of the target device 20 to the direction opposite to the conveyance direction of the sheet S is set to return movement.

As shown in the third figure, the conveyance direction of the sheet S is left in the left and right direction of the paper. In the direction, when the target device 20 moves, the position of the start shaft 44 moves to the left. Thereby, the displacement plate 51 connected to the start shaft 44 by the connection portion 46 moves to the left, and the support plate 23 and the target 22 fixed to the displacement plate 51 via the fixing member 52 also move in the left direction. Next, when the starter shaft 44 is moved to the leftmost position, the target 22 is also moved to the leftmost position. At this time, the position of the target 22 is defined as the first position. On the one hand, the position of the magnetic circuit 25 and the anode 54 does not change.

Therefore, although the position of the target 22 relative to the magnetic circuit 25 is changed in the direction of displacement Change, but the position of the magnetic circuit 25 to the anode 54 does not change. Further, the target 22 is moved in the direction of the displacement, in other words, in the direction in which the anode 54, the target 22, and the magnetic circuit 25 are arranged in parallel, and is moved in a substantially orthogonal direction. As a result, compared with the configuration in which the magnetic circuit 25 moves relative to the anode 54, the change in the plasma state such as the plasma position or density in the surface of the target 22 can be suppressed even when the target device 20 is moved. Next, the surface of the target 22 is scanned in a state where the change in the state of the plasma is suppressed.

As shown in the fourth figure, the conveyance direction of the sheet S is the left direction in the left-right direction of the paper surface, and when the target device 20 is moved back, the position of the start-up shaft 44 is moved to the right direction. Thereby, contrary to the movement of the target device 20, the displacement plate 51, the support plate 23, and the target 22 are moved in the right direction. Next, when the start shaft 44 is moved to the rightmost position, the target 22 is also moved to the rightmost position. At this time, the position of the target 22 is defined as the second position. On the one hand, the position of the magnetic circuit 25 and the anode 54 does not change.

Therefore, the same as when the target device 20 is moved, although the target 22 is opposite to the magnetic circuit 25 The position changes in the direction of displacement, but the position of the magnetic circuit 25 to the anode 54 does not change. Thus, although the position of the target 22 to the magnetic circuit 25 is changed in both directions along the displacement direction by the shaking of the target 22, the position of the magnetic circuit 25 to the anode 54 does not change.

Moreover, the target device 20 is the same as when moving, and the target 22 is opposite to the anode 54 and the target 22 The magnetic circuit 25 is in the parallel direction and moves in a direction substantially orthogonal to each other. As a result, even when the target device 20 is moved, the state of the plasma formed on the surface of the target 22 can be suppressed from changing. The surface of the target 22 is scanned in the opposite direction to when moving, in a state where the state of the plasma can be suppressed.

Thus, since the state of the plasma formed on the surface of the target 22 can be suppressed, It is also possible to suppress a change in state of the sputtered particles released from the target 22 toward the sheet S. In particular, in the plasma containing oxygen, when the target 22 is sputtered, if the position of the magnetic circuit 25 to the anode 54 is changed, the reactivity of oxygen is changed due to the strength of the plasma. Therefore, since the amount of oxygen in the ITO film formed on the sheet S is also changed, the composition of the ITO film is changed in addition to the thickness of the ITO film formed on the sheet S. On the other hand, by suppressing the change in the plasma state at the time of sputtering of the target 22, not only the thickness of the ITO film but also the amount of oxygen in the ITO film can be suppressed in the surface of the sheet S.

In addition, since the position of the magnetic circuit 25 is already fixed, it is provided in the vacuum chamber 11. The position of the oxygen supply port 11a and the magnetic circuit 25 is also unchanged. Here, even if the flow rate of oxygen supplied from the reaction gas supply unit 13 is constant, when the position in the vacuum chamber 11 is changed, the oxygen is supplied from the supply port 11a or the distance from the exhaust port 11b. The status has also changed. Therefore, in the configuration in which the position of the magnetic circuit 25 is changed, the position of the magnetic circuit 25, that is, the state of oxygen connected to the position where the plasma is formed is also different. Therefore, the state of oxygen in the plasma is also changed by the change in the position of the magnetic circuit 25. On the other hand, in the above sputtering apparatus 10, Since the position of the magnetic circuit 25 to the supply port 11a does not change, the change in the state of oxygen in the plasma can be suppressed. As a result, the amount of oxygen in the ITO film is difficult to change.

Further, the anode 54 is located between the target 22 and the sheet S. Therefore, in magnetic electricity The configuration of the change of the position of the anode 25 to the anode 54 can also change the shadowing effect caused by the anode 54 by changing the state of the plasma. Further, the shadowing effect refers to a member such as the anode 54 which is unable to cause the effect of the sputtered particles to reach the film object by the position in the flight path of the sputtered particles released from the target 22. On the other hand, in the configuration in which the position of the anode 54 is not changed by the magnetic circuit 25, since the change in the shielding effect due to the anode 54 can be suppressed, the sheet can be suppressed as compared with the configuration in which the position of the anode 54 is changed by the magnetic circuit. The film thickness in the surface of S is uneven.

Further, the anode 54 extends in a direction orthogonal to the conveyance direction of the sheet S. in Thus, the configuration in which the anode 54 extends along the conveyance direction of the sheet S causes a shadowing effect due to the anode 54 to overlap the anode 54 only in the normal direction of the sheet S in the plane of the sheet S. Near the position, it is difficult to reach the sputter particles. On the other hand, in the above-described sputtering device 10, even if a shadowing effect due to the anode 54 occurs, since the anode 54 extends in a direction orthogonal to the conveying direction of the sheet S, the shadowing effect by the anode 54 can be suppressed. Offset in the face of the sheet S. As a result, the film thickness unevenness in the in-plane of the sheet S can be suppressed as compared with the configuration in which the anode is extended in the conveyance direction.

Moreover, on the surface of the target 22, the position of the magnetic circuit 25 with the target 22 does not change. The composition comparison can suppress the imbalance of the portion exposed to the plasma. Therefore, an imbalance in the eroded area on the surface of the target 22 can be achieved. Further, in the configuration in which the position of the anode 54 is changed by the magnetic circuit 25, the smaller the distance between the anode 54 and the magnetic circuit 25 is, the higher the density of the plasma is, and the amount of sputtering of the target 22 is increased. On the one hand, the greater the distance between the anode 54 and the magnetic circuit 25, the lower the density of the plasma. The amount of sputtering of the target 22 is reduced. Therefore, in the configuration in which the position of the magnetic circuit 25 changes to the anode 54, the erosion on the surface of the target 22 is uneven. On the other hand, in the sputtering apparatus 10 described above, since the density of the plasma does not change, the unevenness of the erosion on the surface of the target 22 can be suppressed.

Incidentally, since the moving speed of the sheet S is higher, the sheet S is passed through the plasma. The time required to generate the region becomes short, so the distribution of the plasma is easily reflected in the thickness distribution of the ITO film formed by the sheet S. Therefore, the thinner the film thickness to be formed, the more the moving speed of the sheet S must be increased. For example, when the thickness of the ITO film formed by the sheet S is 10 nm or more and 20 nm or less, the moving speed of the sheet S, that is, the time required for the sheet S to pass through the plasma generating region, can be increased to reflect the distribution of the plasma. The extent of the thickness of the ITO film formed on the sheet S. In this case, as long as the above configuration is employed, the thickness of the ITO film can be suppressed from being irregular even if the thickness of the ITO film is reduced as compared with the configuration in which the position of the magnetic circuit is changed.

Further, the configuration in which the position of the magnetic circuit 25 changes to the anode 54 is at the target 22 The state of the plasma changes in the surface. Next, when the distance between the anode 54 and the magnetic circuit 25 is small, the film thickness is increased. On the other hand, when the distance between the anode 54 and the magnetic circuit 25 is large, the film thickness is small. Therefore, the thickness of the film is uneven, that is, a convex or concave is formed on the film. Therefore, it has been attempted to reduce the thickness of the film by the fact that the sputtering device 10 is provided with two or more target devices, and each of the target devices synchronizes the film formation regions of the sheet S. .

However, the magnetic circuit 25 moves and moves back, but the sheet S moves only to one. Handling in the direction of transportation. Therefore, the moving speed of the magnetic circuit 25 is kept constant in the moving and returning movements, and the relative speed of the movement of the sheet S and the magnetic circuit 25 in the same direction is maintained when the conveying speed of the sheet S is kept constant. The relative speed at which the magnetic circuit 25 moves to the opposite direction to the sheet S becomes large. Thus, when the magnetic circuit 25 moves and moves back, every unit time The length of the sheet S formed between the films is different. Therefore, even if the area formed by one cathode is synchronized with the film formation area of the other cathode, the film thickness is uneven, and the film remains convex and concave.

On the other hand, in the configuration in which the position of the anode 54 is not changed by the magnetic circuit 25, When the state of the plasma is suppressed, the film thickness unevenness as described above can be suppressed. Therefore, even if only one target device 20 is provided, it is difficult to form the film thickness distributed in the sheet S.

Moreover, since the change in the state of the plasma formed in the sputtering apparatus 10 can be suppressed, The temperature distribution in the plane of the sheet S can be suppressed, and deformation in the sheet S can be suppressed. Thereby, the load due to the heat of the sheet S can be suppressed. Moreover, even in the various constituent members constituting the sputtering apparatus 10, as in the sheet S, the temperature distribution can be suppressed in the constituent members, and deformation of the constituent members can be suppressed. As a result, the durability of the constituent members can be improved.

As described above, in the present disclosure, according to one embodiment of the sputtering apparatus, The effects listed below are obtained.

(1) At the time of sputtering of the target 22, even if the position of the magnetic circuit 25 to the target 22 is changed, the position of the magnetic circuit 25 to the anode 54 is not changed. Therefore, the change in the state of the plasma formed on the surface of the target 22 can be suppressed. Therefore, irregularities in the thickness of the indium tin oxide film formed on the sheet S can be suppressed. Further, like the anode 54, the magnetic circuit 25 does not change the position of the anti-deposition plate 26 acting as an anode. Therefore, the change in the state of the plasma formed on the surface of the target 22 can be suppressed.

(2) Since the moving direction of the target 22 is for intersecting the anode 54, the target 22, and the magnetic circuit 25 with the parallel direction, the target 22 can be scanned with respect to the plasma formed between the anode 54 and the magnetic circuit 25. surface. Therefore, by utilizing the erosion region in the surface of the target 22, the utilization efficiency of the target can be improved.

(3) Since the anode 54 is extended in a direction orthogonal to the conveyance direction of the sheet S, In comparison with the configuration in which the anode 54 is extended in the conveyance direction of the sheet S, the film thickness uniformity in the film formation object can be suppressed by the shadowing effect by the anode 54.

(4) By suppressing the change of the plasma state, it is possible to suppress the strength of the plasma The reactivity of oxygen changes. Therefore, the change in the amount of oxygen in the indium tin oxide film formed by the sheet S can be suppressed.

(5) Even if the shaft drive unit 45 operates to change the position of the starter shaft 44, the movement of the shaft drive unit 45 can be suppressed, and foreign matter can be scattered in the vacuum environment.

Further, the above embodiment can be implemented as appropriate by the following means.

‧ The sputtering apparatus 10 may be provided with a group of three or more sets of the target device 20 and the displacement unit 21, or may be provided with only one set.

The target device 20 may be provided with three or more sets of the target 22 and the support plate 23, or may be provided with only one set. For example, in the case of having only one set of the target 22 and the support plate 23, the target 22 may also be located between the two anodes 54 disposed along the displacement direction.

‧ The magnetic circuit 25 may be provided on the opposite side of the target plate 22 with respect to the support plate 23, and may have only one or a plurality of them.

The anode 54 may be crossed at an angle other than the direction in which the sheet S is conveyed. Even in such a configuration, the range of the shielding effect of the anode 54 is enlarged in the plane as compared with the configuration in which the anode 54 is extended in the conveyance direction. Therefore, unevenness in film thickness can be considerably suppressed.

‧ The configuration of the target 22 is parallel to the anode 54, the target 22, and the magnetic circuit 25, It is also possible to move in the direction in which the angles other than the orthogonal intersect. Even with such a configuration, the surface of the target 22 can be scanned with respect to the plasma, and the erosion region of the target 22 can be enlarged as compared with the configuration in which the target 22 is fixed. Further, the target 22 may be configured to move the anode 54, the target 22, and the magnetic circuit 25 in the parallel direction. Even in such a configuration, since the magnetic circuit 25 does not move with respect to the anode 54, the change in the plasma state formed on the target surface can be suppressed. Further, in comparison with the configuration in which the target 22 is fixed, a considerable erosion region is enlarged on the surface of the target 22.

‧ The position of the target 22, the other two positions between the first position and the second position may also be alternately changed.

‧ The movement of the target S of the sheet S in the conveyance direction can be set as the backward movement, and the movement of the target 22 in the opposite direction to the conveyance direction of the sheet S can be set as the movement.

‧ The target 22 can also be moved to a direction intersecting the conveying direction of the sheet S. In other words, the direction in which the target device 20 is displaced may be such that the wiring direction of the outer peripheral surface of the film forming roller 33 facing the target device 20 intersects. Even in such a configuration, if the position of the anode 54 is not changed by the magnetic circuit 25, the change in the plasma state formed when the target 22 is sputtered can be suppressed. Therefore, uneven film thickness in the sheet S can be suppressed.

The anode 54 is not disposed on the opposite side of the magnetic circuit 25 with respect to the cathode, and may be provided in the magnetic circuit 25. Even with such a configuration, since the position of the anode of the magnetic circuit 25 does not change, the change in the plasma state formed on the surface of the target 22 can be suppressed.

‧ Sputtering gas, which may be a rare gas other than argon, that is, helium, neon, helium And any kind of suffocating.

‧ The reaction gas may be a gas containing oxygen other than oxygen, and may be, for example, H ₂ O or the like. In other words, it is preferable that it is a gas which can generate an oxidation source of oxygen which supplements indium tin oxide.

‧ Indium tin oxide can also be sputtered only by sputtering gas.

‧ The main component of the target may not be indium tin oxide. For example, it may be an inorganic substance such as cerium, lanthanum or zirconium, or an inorganic compound such as cerium oxide or cerium nitride. Further, the main component of the target may be a conductive material or an insulating material. In other words, regardless of the main component of the target, the effect of the configuration in which the magnetic circuit 25 does not change the position of the anode 54 can be obtained.

‧ In the case where the main component of the target 22 is a material other than indium tin oxide, a gas other than oxygen gas such as nitrogen gas or ammonia gas may be used as the reaction gas.

The wall portion of the vacuum chamber 41c and the air chamber 41d in the division and displacement portion 21 is not limited to the bearing portion 42, and the wall portion may not be entirely in the roll axis direction of the casing 41. In other words, the wall portion is preferably configured such that a space including the end portion on the side of the connecting portion 46 in the moving hole 41b, the connecting portion 46, and the starter shaft 44 is divided into a space in which the shaft driving portion 45 is disposed. For example, the wall portion may be configured to form a vacuum chamber by the movement hole 41b, the connection portion 46, and the end portion of the activation shaft 44 that surround only the connection portion 46 side, and the vacuum chamber is formed in the outer casing 41. The space in which the shaft drive unit 45 is disposed is divided.

The displacement portion 21 may not be divided into the vacuum chamber 41c and the air chamber 41d, and the shaft drive portion 45 may be disposed in a vacuum chamber that communicates with the internal space of the vacuum chamber 11.

‧ The conveyance of the sheet S can be intermittently performed when the target 22 is sputtered, and the sputtering of the target 22 can be performed intermittently during the conveyance of the sheet S. Further, it is also possible to carry out such intermittent sputtering and intermittent transportation.

In the sputtering apparatus 10, the sheet conveying unit 30 for conveying the sheet S may be omitted, and the configuration of the position of the sheet S may be fixed in the sputtering apparatus 10 when the target 22 is sputtered. Even if it is configured for this, the effect that the state of the plasma does not change can be obtained.

‧ The film formation target may not be the sheet S, but may be a substrate formed of various materials. In this case, the sputtering apparatus may be configured to transport a film formation object when the target 22 is sputtered, and may be configured to fix a film formation object during sputtering.

20‧‧‧ target device

21‧‧‧Transformation Department

22‧‧‧ Target

23‧‧‧Support plate

25‧‧‧Magnetic circuit

41‧‧‧ Shell

41a‧‧‧ equipped wall

41b‧‧‧ moving holes

41c‧‧‧vacuum room

41d‧‧‧Atmospheric room

42‧‧‧ Bearing Department

43‧‧‧ Sealing members

44‧‧‧Starting shaft

45‧‧‧Axis drive department

46‧‧‧Connecting Department

51‧‧‧Displacement board

51h‧‧‧slit

52‧‧‧Fixed components

53‧‧‧Floating shade

54‧‧‧Anode

Claims (6)

A sputtering apparatus comprising: an anode; a cathode including a plate-shaped target; a magnetic circuit having a fixed position to the anode; a power source supplying power to the cathode; and a displacement portion, the magnetic circuit The position of the anode is not changed, and the position of the target is changed by the shaking of the target; and the control unit controls the driving of the power source and the driving of the displacement portion, and the target is sputtered at different positions from each other. . The sputtering apparatus of claim 1, wherein the anode is disposed on a side opposite to the magnetic circuit, and the displacement portion is crossed along a direction parallel to the anode, the target, and the magnetic circuit. Direction, changing the position of the target. The sputtering apparatus according to the second aspect of the invention, further comprising: a conveying unit that conveys a film forming object so as to be able to pass through a region facing the target, the anode intersecting the conveying direction of the film forming object Stretch in the direction. The sputtering apparatus according to any one of claims 1 to 3, wherein the displacement portion is between the first position and the second position, and the position of the target is alternately changed. The sputtering apparatus according to any one of claims 1 to 3, wherein the main component of the target is indium tin oxide, and further a gas supply portion is provided between the cathode and the anode, and the sputtering gas and oxygen gas are supplied. A sputtering apparatus according to any one of claims 1 to 3, further comprising a vacuum a groove that accommodates the target and the film formation object; the displacement portion includes: a driving portion; and a connecting member that connects the driving portion and the cathode, and changes the cathode by a driving force of the driving portion The connecting member is disposed in the vacuum chamber and outside the vacuum chamber; the driving portion is disposed outside the vacuum chamber.