WO2007083608A1 - Appareil de pulvérisation et procédé de pulvérisation - Google Patents

Appareil de pulvérisation et procédé de pulvérisation Download PDF

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Publication number
WO2007083608A1
WO2007083608A1 PCT/JP2007/050460 JP2007050460W WO2007083608A1 WO 2007083608 A1 WO2007083608 A1 WO 2007083608A1 JP 2007050460 W JP2007050460 W JP 2007050460W WO 2007083608 A1 WO2007083608 A1 WO 2007083608A1
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WO
WIPO (PCT)
Prior art keywords
sputtering
vacuum chamber
sheet
gas
ion source
Prior art date
Application number
PCT/JP2007/050460
Other languages
English (en)
Japanese (ja)
Inventor
Tomonobu Hata
Nobumasa Nambu
Nagayasu Nakamura
Hideki Sasanuma
Takashi Kagechika
Hisami Nishio
Original Assignee
Japan Science And Technology Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006011569A external-priority patent/JP2007191756A/ja
Priority claimed from JP2006011577A external-priority patent/JP4693050B2/ja
Application filed by Japan Science And Technology Agency filed Critical Japan Science And Technology Agency
Publication of WO2007083608A1 publication Critical patent/WO2007083608A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Definitions

  • the present invention relates to a sputtering apparatus and a sputtering method, and more particularly to a sputtering apparatus and a sputtering method in which a plurality of vacuum chambers are connected.
  • a sputtering apparatus for example, positive ions generated by glow discharge in a vacuum chamber filled with a rare sputtering gas are collided with a sputtering target, and atoms of the sputtering target ( Sputtering sources that form a thin film by sputtering (sputtering atoms) and depositing the sputtered atoms on a base substrate are widely known.
  • Sputtering sources that form a thin film by sputtering (sputtering atoms) and depositing the sputtered atoms on a base substrate are widely known.
  • Such a sputtering source is produced under an atmosphere in which an inert gas such as argon gas is introduced as a sputter gas up to an appropriate gas pressure in a vacuum chamber in a high vacuum in order to generate a stable glow discharge. Moved.
  • the deposition conditions in the vacuum chamber are not necessarily constant, such as the gas pressure of the discharge gas, the presence or absence of the reaction gas, and the gas pressure, which are merely different sputtering targets. Usually it is not. From such a background, it is advantageous to use a plurality of vacuum chambers according to the film forming conditions rather than forming different kinds of thin films inside a single vacuum chamber.
  • Patent Document 1 in order to prevent gas from flowing between the vacuum chambers, a pair of seal rolls arranged in parallel with a minute gap in the passage of the belt-like sheet is provided. With respect to, since the distance of the micro gap is short, the viscosity of the gas cannot be fully utilized and it is difficult to say that there is a sufficient effect.
  • Patent Document 1 Japanese Patent Laid-Open No. 2003-27234
  • Patent Document 2 Japanese Unexamined Patent Application Publication No. 2004-232045
  • the communication path through which the belt-like sheet passes is 10 times or less, preferably in the thickness direction of the belt-like sheet. It is necessary to provide a minute gap of 5 times or less, and to extend the range of the minute gap to some extent in the feeding direction of the belt-like sheet, or to provide minute gaps at a plurality of locations within a certain length range.
  • each vacuum chamber has its internal pressure. It changes slightly according to the change of the position, and the position of the minute gap gets out of order.
  • the purpose of the present invention is to properly maintain the film forming conditions such as the degree of vacuum and the introduced gas pressure set for each vacuum chamber, and after determining the transport path of the belt-like sheet in the atmosphere, It is an object of the present invention to provide a sputtering apparatus and a sputtering method in which the belt-like sheet is hardly distorted even when the vacuum chamber is evacuated, and the belt-like sheet is not scratched.
  • a sputtering apparatus of the present invention includes a plurality of vacuum chambers, an airtight communication path in which the vacuum chambers are connected in series, and a belt-like sheet is allowed to pass therethrough, and that of the vacuum chamber.
  • a sputtering device that is housed in each and includes a sputtering source that forms a thin film on the belt-like sheet, and includes a groove block that is attached to the communication path and has a minute gap.
  • a vacuum chamber supporting means for supporting the sheet a sheet conveying means for conveying the belt-like sheet inside the vacuum chamber, and extending downward from the sheet conveying means, and mechanically independent from the vacuum chamber and the vacuum chamber supporting means.
  • Shi And a conveying system support means for supporting the sheet over preparative conveying means! /, Ru.
  • the transport system support means is inserted into a through hole formed in the base plate of the vacuum chamber, has a support leg portion extending downward, and has flexibility, and is attached to the base plate. It is preferable that an airtight material for sealing a space between the support leg and the inside of the through hole is provided.
  • the transport system support means includes a plate portion, and the plate portion is attached to and supports the lower end of the support leg portion, and the airtight material is cylindrical, and the vacuum chamber and the plate portion It is preferred to extend between U ⁇ .
  • first and second stubs are fixed to adjacent first and second vacuum chambers of the plurality of vacuum chambers, respectively, one of which is wrapped around the other and connected, and has the communication path therein. It is preferable that a rib and an airtight knock attached to the connecting portion of the first and second sleeves are provided. Furthermore, it is preferable to include an interval regulating member that is located between the adjacent vacuum chambers and prevents the adjacent vacuum chambers from approaching a predetermined interval.
  • the groove block includes a gap adjusting means, and the gap adjusting means adjusts the minute gap.
  • the gap adjusting means is formed by opening in the direction intersecting the communication path by the groove block, and is inserted into the insertion hole and the insertion hole so as to be movable. It is preferable to have a core part that regulates.
  • the vacuum chamber is located downstream in the transport direction of the strip sheet from the sputtering source, and irradiates the ions of the reaction gas toward the strip sheet being transported and irradiated It is preferable to provide an ion source that forms the thin film of the compound by reacting the ions with atoms of the sputtering target deposited on the belt-like sheet. Further, it operates periodically in the first and second operation periods, gives output power to the sputter source, performs sputter deposition in the sputter source in the first operation period, and performs the first operation in the second operation period.
  • a power supply device for a notch that stops the sputter deposition by making the output power lower than an operation period, and the ion source operates regardless of the pause of the sputter deposition, and the reactive gas It is preferable that the thin film of the compound is sufficiently generated by the ions.
  • the sputtering apparatus of the present invention is a sputtering apparatus for forming a thin film of a compound on a substrate, and is disposed in the vacuum chamber, substrate transport means for transporting the substrate in a vacuum chamber, and a sputtering gas.
  • substrate transport means for transporting the substrate in a vacuum chamber
  • a sputtering gas When a discharge is performed using the sputtering target as one electrode in an atmosphere into which the reaction gas is introduced and atoms scattered from the sputtering target are deposited on the substrate being transported, the discharge is performed while maintaining the input voltage substantially constant.
  • the output voltage is A sputtering source that operates in a high-speed sputtering area where the output power is rapidly increased and the output power is decreased, and a sputtering source that is disposed in the vacuum chamber and downstream of the sputtering source in the substrate transport direction.
  • the region for depositing the atoms by the sputtering source and the region for irradiating the ions from the ion source are arranged adjacent to each other or partially overlapping each other.
  • the sputtering source accommodates the sputtering target and is opened toward the substrate side, and an introduction port for introducing the sputtering gas and the reaction gas into the target chamber. I prefer to have it.
  • the sign power of the potential of the ion source with respect to the substrate is emitted by the ion source.
  • a bias power supply device is preferably provided that applies a bias voltage between the substrate and the ion source in the same direction as the sign of the charge of the ions.
  • the ion source is a cold cathode type, further comprising a thermoelectron generating means for emitting thermoelectrons in the vicinity of a discharge anode and a force sword in the ion source.
  • reaction gas is oxygen gas and the thin film is an acid film.
  • the ion source includes a housing, a gas conduit for sending the reaction gas into the housing, at least one discharge electrode housed in the housing, and between the discharge electrode and the housing. And a power supply device for an ion source that applies a voltage to the substrate, ionizes the reaction gas by discharge plasma, and discharges it from the housing.
  • the sputtering method of the present invention is a sputtering method for forming a thin film of a compound on a substrate, and discharge is performed using a sputtering target as one electrode in an atmosphere into which a sputtering gas and a reactive gas are introduced in a vacuum chamber.
  • the discharge is performed while maintaining the input voltage substantially constant, and the output voltage is increased by increasing the amount of oxygen gas introduced while continuing the discharge.
  • the introduction amount of the reaction gas is reduced after being lowered to a certain level, the output voltage is rapidly increased and the atoms are deposited on the substrate in a high-speed sputtering region where the output power is reduced.
  • Sputter deposition step and immediately after the sputter deposition step, the substrate is exposed to the reaction gas ion atmosphere to react with the atoms deposited on the substrate. And a response process.
  • the sheet conveying means for conveying the belt-like sheet in the vacuum tank is supported on the floor surface in a state of being mechanically separated from the vacuum tank or the vacuum tank supporting means. Even if the vacuum chamber is slightly deformed due to the exhaust, the belt-like sheet that does not change the carrying path of the belt-like sheet passes through the communication path without rubbing against the wall surface.
  • the communication path connecting the vacuum chambers with the first and second sleeves as described above, it is possible to provide a degree of freedom in the feeding direction of the belt-like sheet. Since the airtightness is ensured, there is no possibility that the airtightness is broken between the vacuum chambers even if the vacuum chambers are deformed to some extent. Furthermore, by using the gap adjusting means, Thus, it is possible to more reliably restrict the gas flow between the vacuum chambers.
  • FIG. 1 is a conceptual diagram showing an outline of an inline sputtering apparatus using the present invention.
  • FIG. 2 is a cross-sectional view of an essential part showing an example of a configuration of a communication path.
  • FIG. 3 is a cross-sectional view of a main part showing another configuration example of the communication path.
  • FIG. 4 is a cross-sectional view of an essential part showing a gap adjusting device used in connection with a communication path.
  • FIG. 5 is a schematic view showing a gantry supporting a vacuum chamber and a transport system.
  • FIG. 6 is a schematic view showing a support structure of a transport system.
  • FIG. 7 is a schematic view showing a support structure of a motor that drives a transport system.
  • FIG. 8 is an explanatory view showing an example of a sputtering apparatus for efficiently forming an oxide film.
  • FIG. 9 is a perspective view showing the appearance of a sputtering source.
  • FIG. 10 is a cross-sectional view of a sputtering source.
  • FIG. 11 is a perspective view showing the appearance of the ion source.
  • FIG. 12 is a cross-sectional view of an ion source.
  • FIG. 13 is a waveform diagram showing changes in input power of a sputtering source and an ion source.
  • FIG. 14 is a conceptual diagram showing an example in which a bias power supply device is provided.
  • FIG. 15 is a timing chart showing an example of the operation of the bias power supply apparatus.
  • FIG. 16 is a conceptual diagram showing an example in which a filament for generating thermoelectrons is provided.
  • FIG. 17 is an explanatory view showing the connection between the filament and the power supply device.
  • FIG. 18 is a timing chart showing the operation of the filament.
  • FIG. 1 An inline sputtering apparatus using the present invention is conceptually shown in FIG.
  • This in-line sputtering device is configured by connecting vacuum chambers 2 to 6 in series by a communication path 7.
  • the vacuum chambers constituting each chamber are stably installed on the floor 15 by the gantry 8-12.
  • the vacuum chamber 2 is used as a sheet supply chamber, and stores a roll 16a of a belt-like sheet 16 serving as a thin film substrate.
  • the vacuum chamber 6 is used as a sheet take-up chamber, and the film-formed belt-like sheet 16 is wound up in a roll shape.
  • the vacuum chambers 3, 4 and 5 are provided with sputtering sources 3a, 4a and 5a, Sputter film formation of a multilayer film structure using different types of target materials is performed.
  • Each vacuum chamber 2 to 6 is connected to an individual exhaust device, and the vacuum chambers 2 to 6 are evacuated before performing the sputtering film formation.
  • discharge gas is introduced after evacuation to a predetermined degree of vacuum, and reaction gases such as oxygen and nitrogen are introduced to a predetermined gas pressure as necessary. Is done. Since the gas pressure of the discharge gas and reaction gas thus introduced must be maintained stably even during sputtering film formation, the discharge gas and reaction gas are continuously introduced according to the exhaust capacity of the exhaust device.
  • the vacuum chamber 2 serving as a sheet supply chamber and the vacuum chamber 6 serving as a sheet scraping chamber do not need to be filled with a discharge gas or a reaction gas, but the adjacent vacuum chamber 2 or vacuum chamber In order to suppress the movement of gas between the two, it is desirable that the gas pressures are not extremely different from each other.For example, exhaustion should be continued while introducing an appropriate amount of discharge gas. Is also effective.
  • a transport mechanism is provided as means for stably transporting the belt-like sheet 16 from the vacuum chamber 2 to the vacuum chamber 6.
  • the belt-like sheet 16 is transported by driving a scraping transport mechanism 24 provided in the vacuum chamber 6, and is transported at a constant tension 'speed by a delivery transport mechanism 25 provided in the vacuum chamber 2.
  • the vacuum chambers 3 to 5 are provided with transport mechanisms 26 to 28 for determining a transport path so that the strip sheet 16 travels while maintaining a certain distance with respect to the respective sputtering sources 3a to 5a. . It is sufficient to use a driven roller for the rollers that make up the transport mechanism 26-28. However, loosening and abnormal tension do not occur on the belt-like sheet 16 on the way! / Checking is also effective.
  • FIG. 2 shows a specific configuration of the communication path 7 that connects adjacent vacuum chambers.
  • a slit-like opening 30a is formed in the wall surface 30 of one vacuum chamber, and a belt-like sheet 16 whose width direction is perpendicular to the paper surface is inserted.
  • a similar opening 31a is also formed in the wall 31 of the other vacuum chamber, and the belt-like sheet 16 travels through the opening 31a to the inside of the other vacuum chamber.
  • the first sleeve 33 is fixed to the wall surface 30, and the second sleeve 34 is fixed to the other wall surface 31.
  • These sleeves 33 and 34 have a first sleeve on the tip side of the second sleeve 34 as shown in the figure.
  • Each of the sliding contact portions is provided with a packing 35 for keeping the inside airtight.
  • As the packing 35 it is easy to use a so-called O-ring V, and two or three of them may be provided in the conveying direction of the belt-like sheet 16 as necessary.
  • openings 30a and 31a formed in the wall surfaces 30, 31 of the vacuum chamber are formed as minute gaps.
  • the mutual distance between the inner walls of the openings 30a and 31a facing the front and back surfaces of the belt-like sheet 16 is suppressed to a micro gap D within 5 times the thickness of the belt-like sheet 16.
  • PET polyethylene terephthalate
  • the micro gap D is 0.5 mm or less.
  • the forces between the adjacent vacuum chambers that are in fluid communication with each other through the two openings 30a and 3la having the minute gap D are belt-shaped so as to cross the approximate center of the minute gap D. Since the sheet 16 exists, the gas does not easily move through the openings 30a and 31a due to the influence of the viscosity of the gas itself, and the gas can be prevented from flowing between the adjacent vacuum chambers. If the minute gap D is suppressed to 10 times or less that of the belt-like sheet 16, the gas flow can be prevented to the extent that there is no practical problem.
  • Fig. 3 and Fig. 4 show examples that are more effective in preventing gas flow between adjacent vacuum chambers.
  • the openings 30b and 31b formed in the wall surfaces 30 and 31 of the vacuum chamber are opened with a large size regardless of the thickness of the belt-like sheet 16 and do not form the minute gap D.
  • a groove block 37 in which a slit passage 37a is formed is provided in the space surrounded by the first sleeve 33 and the second sleeve 34.
  • the space between the upper and lower wall surfaces of the slit passage 37a is determined to be 0.5 mm with respect to the thickness 0.1 mm of the belt-like sheet 16, and the entire slit passage 37a is a minute gap D.
  • the viscosity of the gas also works effectively, and it is possible to considerably restrict the gas flow through the slit passage 37a. It should be noted that a force that is more effective in setting the minute gap D in a longer range in the length direction of the belt-like sheet 16 In the above embodiment, a practically sufficient effect can be obtained even with about 100 mm.
  • the groove block 37 is supported by screwing a flange 37b to the wall surface 31 of the vacuum chamber.
  • a slot 37c for screwing is formed on the flange 37b, but this slot 37c is lengthened in the thickness direction of the belt-like sheet 16, and the mounting position can be adjusted according to the travel position of the belt-like sheet 16. ing.
  • the position of the groove block 37 can be adjusted so that the belt-like sheet 16 passes almost the center of the slit passage 37a.
  • the inner wall force of the slit passage 37a can also be separated.
  • the groove block 37 is divided into two parts up and down, and one of the mounting positions is adjusted up and down to adjust the size of the minute gap D, or both mounting positions are adjusted to determine the relative position to the belt-like sheet 16. Even so,
  • FIG. 4 shows an example in which a minute gap D is formed on the inner wall of one of the vacuum chambers so as to communicate with the communication path.
  • the gap adjusting device 40 is attached inside the wall surface of the vacuum chamber.
  • the gap adjusting device 40 is an adjustable groove block, and includes a base portion 41a fixed to the wall surface 31 and a core 41b supported so as to be movable in the vertical direction with respect to the base portion 41a.
  • the minute gap D can be adjusted by adjusting the screwing length of the adjusting screw 41c and the screw hole formed in the base portion 41a.
  • a packing 42 is provided at the sliding contact portion between the base portion 41a and the core 41b so as to prevent the gas from flowing due to the sliding contact force.
  • FIG. 5 schematically shows a structure for individually supporting the vacuum chamber and the conveying means provided therein.
  • the vacuum chamber 2 and the vacuum chamber 3 are supported on the floor 15 by the gantry 8 and 9, respectively.
  • the base 8 of the vacuum chamber 2 supports the floor 15 of the vacuum chamber support legs 45 that support the bottom of the vacuum chamber 2 to the floor 15 and the delivery / conveying mechanism 25 provided inside the vacuum chamber 2.
  • a transport system support leg 46 Similarly, the base 9 of the vacuum chamber 3 is provided with a vacuum chamber support leg 48 that supports the bottom of the vacuum chamber 3 and a transport system support leg 49 that supports the transport mechanism 26, which are individually supported on the floor surface 15. And speak.
  • the delivery / conveying mechanism 25 has a common base frame 25a and a supporting portion for the roll 16a and a carrying unit. A plurality of rollers that determine a feeding path are attached to form a unit, and the whole feeding / conveying mechanism 25 is supported by a conveying system support leg 46.
  • the transfer system support legs 46 penetrate the base plate forming the bottom surface of the vacuum chamber 2 and reach the floor surface 15 without mechanical connection with the vacuum chamber 2 and the vacuum chamber support legs 45.
  • the in-line sputtering apparatus When the in-line sputtering apparatus is operated, it is desirable to attach a pipe-shaped interval regulating member 51 so as to surround the communication path 7 with an external force, for example.
  • a pipe-shaped interval regulating member 51 As shown in Fig. 2 to Fig. 4, when the communication passage 7 is composed of the first sleeve 33 and the second sleeve 34 that are nested, and the packing 35 is incorporated in each sliding contact portion, the adjacent vacuum chamber The length of the communication passage 7 can be easily adjusted according to the mutual distance between the two and three. However, if the vacuum is exhausted from each vacuum chamber of the inline sputtering device, the adjacent vacuum chambers 2, 3 At the same time, atmospheric pressure is applied in the direction of approaching each other while the communication path 7 is contracted.
  • a space regulating member 51 is disposed between the adjacent vacuum chambers 2 and 3 so as to relatively regulate the shortest space between the vacuum chambers 2 and 3. Since both ends of the spacing regulating member 51 are disposed so as to contact the flange portions of the first and second sleeves 33 and 34 fixed to the vacuum chambers 2 and 3, respectively, the exhaust proceeds and the vacuum chambers 2 and 3 Even if the pressure is applied in the directions close to each other due to the atmospheric pressure, the shortest interval is limited by the interval regulating member 51, and the vacuum chambers 2 and 3 do not move or tilt greatly.
  • the spacing regulating member 51 does not necessarily have to be in a pipe shape, and may have a rod shape or a frame shape as long as the strength is sufficient.
  • the installation location is not limited to the position that surrounds the communication path 7, and if it is a position that can regulate the shortest interval between the vacuum chambers 2 and 3, for example, it is provided between the upper portions of the vacuum chambers 2 and 3 and the mounts 45 and 48. It is also possible. Of course, such a spacing regulating member 51 is similarly provided between the other vacuum chambers.
  • the transport system support leg 46 protrudes outside the vacuum chamber 2 through a through hole 50 a formed in the base plate 50 and reaches the floor 15.
  • a pedestal 46a as a plate placed on the floor 15 is fixed to the transport system support leg 46, and the transport system support leg 46 is enclosed inside.
  • a flexible pipe-like airtight material 55 is provided between the base plate 50 and the base 46a so as to be inserted. Both ends of the airtight material 55 are fixed to the base plate 50 and the pedestal 46a via mounting seats incorporating packings 56 at appropriate locations, and the through holes 50 are in a state of being shielded from the atmosphere.
  • a flexible pipe can be used as the flexible pipe-like airtight material 55.
  • the airtight material 55 is flexible, so that the vibration and deformation of the base plate 50 are mechanical.
  • the transfer system support legs 46 that cannot be transmitted to the transfer system support legs 46 are mechanically independent from the vacuum chamber 2 and the vacuum chamber support legs 45.
  • the form of such a transport system support leg 46 is the same as that of the transport system support leg 49 of the vacuum chamber 3, and is also the same in the other vacuum tanks 4 to 6 shown in FIG.
  • each vacuum chamber is evacuated to a predetermined degree of vacuum, discharge gas and reaction gas are introduced as necessary, and the internal pressure of the vacuum chamber changes. There is no change.
  • the transport of the belt-like sheet 16 is started and sputter film formation is performed. The film is transported under the set initial transport path, and the sputter film can be formed without scratching the belt-like sheet 16.
  • the number of vacuum chambers provided between the vacuum chamber 2 serving as the sheet supply chamber and the vacuum chamber 6 serving as the sheet collection chamber appropriately increases or decreases depending on the number of thin film layers formed on the belt-like sheet 16. be able to.
  • the structure of the communication path 7 can be made quite common, and if the vacuum chambers are also provided with discharge gas and reaction gas inlets, the basic structure of the vacuum chamber itself can be made common. It can also be achieved by simply changing the target material or target device according to the type of thin film.
  • the force used by the motor to convey the belt-like sheet 16 In order to prevent the distortion or deformation of the vacuum chamber from reaching the motor, it is effective to adopt the configuration shown in FIG.
  • the scraping roller 60 for winding the belt-like sheet 16 and its rotating shaft 61 are, as described above, the mechanical support leg 46 passing through the through hole 50a of the base plate 50 and the vacuum tank support leg 45. Independently, it is supported on the floor 15 via the transport system frame 62.
  • the vacuum chamber 6 is formed with an opening 63 having an inner diameter with a margin with respect to the outer diameter of the rotating shaft 61, and the rotating shaft 61 passes through the opening 63 and protrudes into the atmosphere.
  • the rotary shaft 61 is positioned with high accuracy by bearings 64 and 64 fixed to the transport system support leg 46.
  • the rotating shaft 61 is supported by a dedicated support plate 65 in the atmosphere, and is connected to a motor 67 via a universal joint 66.
  • a flexible pipe 68 is provided between the opening 63 and the support plate 65 to block the opening 63 from outside air.
  • the dot portion in the figure represents a dot / kin such as an O-ring. According to the above configuration, the belt-like sheet can be stably conveyed without the vibration or deformation of the vacuum chamber 6 or the vacuum chamber support leg 45 being applied to the motor 67 that drives the conveyance system.
  • a first step of depositing a thin film on a base substrate by sputtering while causing an acid-sodium reaction in a discharge plasma of a gas containing oxygen gas as a reactive gas It is known to form an oxide film by alternately feeding the base substrate to the second step of exposing the incompletely oxidized thin film to ozone in the non-discharge region and completely oxidizing it. (For example, see Japanese Patent No. 3446765).
  • a sputtering method for forming an oxide film at high speed in an atmosphere into which a sputtering gas and a reactive gas are introduced is known from Japanese Patent No. 3261049.
  • the discharge is performed while maintaining the input voltage substantially constant, and the amount of reaction gas introduced is increased while the discharge is continued to lower the output voltage to a certain level, and then the amount of oxygen gas introduced is reduced.
  • the sputtering source is operated in the high-speed notch region where the output voltage increases rapidly and the output power drops.
  • Such a high-speed sputtering operation in a special high-speed sputtering region is known as a transition region mode.
  • FIG. 8 shows an outline of a sputtering apparatus 102 that can form a composite thin film with high efficiency.
  • the vacuum chamber 103 is provided with a carry-in opening 103a for feeding the PET film strip 104 as the base substrate into the vacuum chamber 103, and a carry-out opening 103b for feeding the strip 104 formed with an oxide film. It is.
  • the carry-in opening 103a is connected to a sheet supply chamber containing a sheet roll obtained by rolling a long belt-like sheet 104 in a roll shape, and a take-off roller for winding the belt-like sheet 104 is arranged in the carry-out opening 103b.
  • the sheet storage chamber is connected
  • the belt-like sheet 104 is fed into the vacuum chamber 103 from the sheet supply chamber via the carry-in opening 103a by the transport mechanism 105, and is continuously transported in the vacuum chamber 103 at a constant speed. Thereafter, the oxide film is formed, and then conveyed to the sheet scraping chamber through the unloading opening 103b and wound around the scraping roller. Note that the sheet supply chamber and the sheet scraping chamber are evacuated in the same manner as the vacuum chamber 103. In addition, in the loading opening 103a and the unloading opening 103b, It is also possible to form multiple layers by connecting another vacuum chamber for forming a film or a metal film.
  • a rotating drum 106 and a pair of guide rollers 107 are provided in the vacuum chamber 103, and the belt-like sheet 104 is hung on the rotary drum 106 and each guide roller 107.
  • the film passes through a film forming stage for forming an oxide film.
  • the rotary drum 106 and the guide rollers 107 are rotated at a rotational speed at which no slip occurs between the rotary drum 106 and the guide rollers 107 with the belt-like sheet 104 being conveyed.
  • the vacuum chamber 103 and the rotary drum 106 have conductivity and are grounded.
  • a vacuum pump 109 is connected to the vacuum chamber 103, and the vacuum pump 109 exhausts the inside of the vacuum chamber 103 to a degree of vacuum necessary for film formation. It should be noted that the vacuum chamber 103 can be opened with a well-known structure after leaking to atmospheric pressure when exchanging the belt-like sheet 104 or a sputtering target described later, or for work such as inspection and maintenance.
  • a sputtering source 110 and an ion source 111 are arranged on the film forming stage, and the ion source 111 is arranged on the downstream side of the conveying path of the belt-like sheet 104 with respect to the sputtering source 110.
  • the sputter source 110 discharges between the grounded vacuum chamber 103 and the rotating drum 106, thereby depositing metal atoms (sputter atoms) struck from the sputtering target on the surface of the belt-like sheet 104, thereby A thin film is formed. Therefore, a sputter deposition process for forming a metal thin film is performed by the sputter source 110.
  • the sputtering source 110 is provided with a shirter 11 2 having conductivity that is freely rotatable between a closed position positioned between the sputtering target and the rotary drum 106 and an opened position retracted from the sputtering target.
  • a shirter 11 2 having conductivity that is freely rotatable between a closed position positioned between the sputtering target and the rotary drum 106 and an opened position retracted from the sputtering target.
  • the ion source 111 is for a reaction process in which ions are reacted with the metal thin film formed by the sputtering source 110 on the belt-like sheet 104, and the metal thin film is made into a composite thin film. .
  • an oxide film is formed, and the ion source 111 is used to oxidize a metal thin film with oxygen ions used as a reaction gas in the sputtering source 110. Releases charged oxygen ions.
  • the sputter source 110 is operated in the transition region mode, the atoms of the metal thin film formed by the sputter source 110 are completed. There are a mixture of fully oxidized, incompletely oxidized oxygen deficiencies, or even not oxidized at all. Is completely oxidized.
  • the ion source 111 is arranged close to the downstream side of the sputtering source 110. This is because the sputtering source 110 is operated in a transition region mode in which sputtering can be performed at high speed in an atmosphere of sputtering gas (argon gas) and reaction gas (oxygen gas). This is because even when the sputter target of the sputter source 110 or the vicinity thereof is reached, a sufficient deposition rate of metal atoms can be obtained as long as the amount does not deviate from the transition region mode. Since it is not necessary to block the space between the sputter source 110 and the ion source 111, the number of parts can be greatly reduced and the sputter apparatus 102 can be downsized.
  • argon gas sputtering gas
  • oxygen gas oxygen gas
  • the flow rate controller 113 independently adjusts the introduction amounts of argon gas and oxygen gas as a reaction gas for the sputter deposition process by the sputter source 110.
  • the flow controller 114 adjusts the amount of oxygen gas that is the source of oxygen ions introduced into the ion source 111.
  • a DC power source is used as the sputtering power source device 116 and the ion source power source device 117.
  • the sputtering power supply 116 has a negative electrode connected to the sputtering source 110, a positive electrode connected to the vacuum chamber 103 and the rotating drum 106, and is grounded, and the potential on the negative electrode side with respect to the positive electrode side.
  • a negative voltage is output so that In the ion source power supply device 117, the negative electrode is connected to the vacuum chamber 103, the rotating drum 106, and the case of the ion source 111 and grounded, and the positive electrode is connected to the discharge electrode in the case of the ion source 111.
  • a positive voltage is output so that the potential on the positive electrode side is increased with reference to the negative electrode side.
  • the control unit 120 controls the flow controllers 113 and 114 and the power supply devices 116 and 117.
  • the sputtering source 110 can be sputtered at high speed. Operate in the possible transition region mode.
  • the ability of the sputter source 110 to form a thin metal film is higher than that of the ion source 111.
  • the ion source 111 When the sputter source 110 is operated continuously, the ion source 111 is Since the defect is incomplete, the operation at the sputter source 110 is intermittent while maintaining the operation in the transition region mode. Of course, when the ion source 111 has a sufficiently high acidity, the sputter source 110 can be operated continuously.
  • FIG. 9 shows an appearance of the sputter source 110 and FIG. 10 shows a cross section thereof.
  • the sputter source 110 includes a jacket 123 that forms a target chamber 122.
  • the jacket 123 has a hollow cylindrical shape, is fixed to the vacuum chamber 103, and a cylindrical sputter target 125 is rotatably accommodated in the target chamber 122.
  • an opening 123a for opening the target chamber 122 is provided at a portion facing the rotating drum 106, and the sputter target 125 in the target chamber 122 is connected to the rotating drum 106 through the opening 123a.
  • the sputter source 110 is arranged in the vacuum chamber 103 so as to coincide with the width direction of the zonal sheet 104 along the axis of the sputter target 125 (direction perpendicular to the transport direction).
  • the sputtering target 125 is obtained by forming a target layer 125b so as to cover the outer peripheral surface of the conductive support cylinder 125a.
  • the sputter target 125 is rotatable in the target chamber 122 as described above, and the rotating shaft 126 connected to the shaft by a gear or the like is provided on the upper surface of the jacket 123.
  • the sputtering target 125 is rotated by the motor 127 via the rotating shaft 126, and the entire peripheral surface of the target layer 125b is used for sputtering.
  • the support cylinder 125a is connected to the negative electrode of the sputtering power source device 116, and the sputtering target 125 is used as a negative discharge electrode for sputtering.
  • a hollow tube 128 is passed through the hollow portion of the sputter target 125, and a magnet unit 129 is disposed inside the sealed interior.
  • the hollow tube 128 is fixed to the jacket 123.
  • small magnets 132a and 132b are fixed to an iron support member 131.
  • the support member 131 is elongated along the axis of the support cylinder 125a, and the magnets 132a are arranged in a line along the longitudinal direction in the center of the surface on the rotating drum 106 side so as to surround the periphery of the magnets 132a.
  • the magnets 132b are arranged in a rectangular shape.
  • the magnet 132a has the north pole facing the rotating drum 106
  • the magnet 132b has the south pole facing the rotating drum 106.
  • This The magnet unit 129 configured as described above is for performing magnetron sputtering, and confins plasma in the vicinity of the target by the magnetic force of each of the magnets 132a and 132b.
  • the hollow tube 128 is arranged eccentrically so as to approach the rotating drum 106 in the support tube 125a. Also, in order to perform sputtering with high efficiency, each magnet 1 32b provided on both sides of the magnet 132a is opened outward so that the magnetic field lines between the magnet 132a and the magnet 132b are along the surface of the target layer 125b. It is attached to. Cooling water from the cooling pipe 133 is passed between the support tube 125a and the hollow tube 128 to prevent the sputter target 125, the magnet unit 129, and the like from becoming hot.
  • An argon gas and oxygen gas introduction pipe 135 is connected to the peripheral surface portion of the jacket 123 opposite to the opening 123a via an introduction port, and argon gas and oxygen gas are introduced from the introduction pipe 135 to the target chamber 122. Introducing a sputtering target in an atmosphere rich in these gases
  • argon gas and oxygen gas are introduced between the jacket 123 and the sputter target 125.
  • a plurality of introduction pipes 135 are arranged side by side along the axial direction of the jacket 123.
  • the appearance of the ion source 111 is shown in FIG. 11, and a cross section is shown in FIG.
  • the ion source 111 includes a casing 137 having a hollow box shape elongated in the width direction of the belt-like sheet 104, a discharge electrode 142 and a magnet 143 incorporated therein.
  • the case 137 also has a force with a box part 141 formed of a magnetic material having conductivity and a panel member 140 having a T-shaped cross section.
  • the front panel 140a of the panel member 140 By arranging the front panel 140a of the panel member 140 smaller than the opening size in the opening provided on the front surface of the box part 141, along the four sides of the surface facing the rotating drum 106 of the housing 137. A slit 144 is formed.
  • the box part 141 and the panel member 140 are connected to the negative electrode of the ion source power supply device 117 and grounded.
  • a protruding portion 141a protruding toward the opening is provided along the longitudinal direction.
  • the S pole side end of the magnet 143 is fixed to the tip of the projection 141a, and the projection 140b of the panel member 140 protruding from the rear side of the front panel 140a is attached to the N pole side end of the magnet 143. It is fixed.
  • These protrusions 140b, 141a and magnet 143 An appropriate gap is provided between the inner upper surface and the lower surface of the box part 141.
  • the edge of the slit 144 on the side of the box part 141 is set to the S pole, and the edge on the front panel 140a side is set to the N pole.
  • a transverse magnetic field line is formed, and plasma is generated in the vicinity of the slit 144.
  • the introduced oxygen gas is efficiently converted to oxygen ions (divalent cations).
  • a gas supply chamber 145 is formed inside the casing 137 so as to surround the projecting portions 140b and 141a and the magnet 143.
  • a sub gas supply chamber 146 to which oxygen gas is supplied from a gas conduit 147 is provided on the rear surface of the casing 137.
  • the sub gas supply chamber 146 and the gas supply chamber 145 are connected by a plurality of introduction pipes 148. is there. In this way, oxygen gas is uniformly introduced into the gas supply chamber 145.
  • two rod-shaped discharge electrodes 142 having a rectangular cross section and long in the longitudinal direction of the housing 137 are arranged so as to sandwich the magnet 143.
  • the discharge electrode 142 is made of a conductive material, and is electrically insulated from the box part 141 by being attached to the box part 141 via an insulating plate 149.
  • Each discharge electrode 142 is connected to the positive electrode of the ion source power supply device 117 via an electrode terminal 151 penetrating the back surface of the box portion 141.
  • Reference numeral 152 denotes a sleeve made of an insulating material for attaching the electrode terminal 151 to the box portion 141 in an insulated state.
  • Reference numerals 154a to 154c are cooling pipes that cool the discharge electrode 142, the box part 141, and the panel member 140, and prevent the temperature of the ion source 111 from rising by passing cooling water through these pipes.
  • the discharge is maintained even when the electrode plate 153 is oxidized by exposure to oxygen ions.
  • the ion source for oxidizing is not limited to the above-described configuration, and ion sources having various configurations can be used.
  • a plurality of ion sources may be used in order to increase the capability of the reaction process using ions that are ion source capable.
  • FIG. 13 shows the state of control of the input power to the sputter source 110 and the ion source 111.
  • the power supply device 116 for power supplies the sputter source 110 with input power (for example, 3 kW) sufficient to deposit metal by sputtering during the operation period of time T1. After the end of one operation period, it becomes a rest period of time T2. During this idle period, the sputtering power supply 116 does not provide input power for metal deposition, but provides input power (for example, about 1 kW) to the sputtering source 110 so that discharge by the sputtering power supply 116 is continued. . When one pause period ends, the operation period starts again. On the other hand, as shown in FIG. 13 (b), the ion source power supply device 117 continuously provides the ion source 111 with input power for ionizing oxygen gas.
  • Times Tl and T2 are determined according to the conveyance speed of the belt-like sheet 104, the deposition speed by the sputtering source 110, the acidity ability by the ion source 111, and the like.
  • the time T2 can be set to “0” when the acidity of the ion source 111 is sufficiently higher than that of the sputtering source 110.
  • time T1 is 1 second and time T2 is 4 seconds.
  • the operation of the sputtering apparatus 102 configured as described above will be described.
  • the vacuum chamber 103 is set to a high vacuum of the order of 10 -6 Torr
  • the rotation of the sputtering target 125 is started by the motor 127.
  • argon gas and oxygen gas are introduced into the target chamber 122 from the introduction pipe 135 via the flow rate controller 113.
  • the argon gas and oxygen gas introduced by the flow controller 113 are set to a predetermined mixing ratio, for example, a ratio of about 5: 1, and the gas pressure in the vacuum chamber 103 is 1 X 10 _3 to 1.4 X 10 _3 Torr. Keep on.
  • argon gas and oxygen gas with a force of 135 in the introduction pipe pass between the jacket 123 and the sputter target 125 and flow into the vacuum chamber 103 from the opening 123a, the spattering exposed to the opening 123a is performed.
  • the surface of the target layer 125b to be provided is placed in an atmosphere rich in argon gas and oxygen gas.
  • the shatter 112 After confirming that the shatter 112 is in the closed position, for initial preparation, for example, between the sputter target 125 (minus pole) and the rotating drum 106 (plus pole) under the control unit 120.
  • 3kW DC power is supplied from the power supply device 116 for sputtering.
  • discharge is started between the rotary drum 106 and the sputter target 125 through the conductive shutter 112, and argon gas plasma is generated.
  • This argon gas plasma is Due to the magnetic force of G, the density is distributed in the vicinity of the surface of the target layer 125b exposed in the opening 123a.
  • the shirt 112 may be left in the open position.
  • the amount of oxygen gas introduced is increased by adjusting the flow rate controller 113.
  • the gas pressure in the vacuum chamber 103 gradually increases.
  • the output voltage (discharge voltage) actually generated between the rotating drum 106 and the sputter target 125 gradually decreases.
  • the amount of oxygen gas introduced is gradually decreased gradually, and the output voltage increases rapidly, and the discharge state is reduced to a special discharge state that becomes a high-speed sputtering region where high-speed sputtering is performed, that is, a transition region mode.
  • the operation of the sputter source 110 is shifted.
  • the details of the transition region mode which is such a special discharge state are described in detail in Japanese Patent No. 3310409.
  • the transport of the belt-like sheet 104 by the transport mechanism 105 is started, the shirter 112 is set to the open position, and the sputter deposition process by the sputter source 110 is started.
  • the argon gas plasma is distributed in the vicinity of the surface of the target layer 125b, and cations contained therein collide with the target layer 125b.
  • the atoms are sputtered out as sputtered atoms from the surface of the target layer 125b, and this is deposited on the surface of the belt-like sheet 104 facing the sputter source 110 to form a metal thin film.
  • the sputtered atoms are completely oxidized by contact with oxygen and oxygen ions existing in the path toward the belt-like sheet 104, or oxygen atoms are insufficient and incompletely oxidized. In some cases, it may be deposited on the surface of the belt-like sheet 104 after being removed.
  • the next operation period starts. Again, the input power to the sputter source 110 is increased to 3 kW, and a metal thin film is formed on the belt-like sheet 104 in the transition region mode. And after this operation period, it becomes a rest period again.
  • a metal thin film is formed intermittently on the belt-like sheet 104. If the interval and the conveyance speed are adjusted appropriately, a thin metal film is uniformly formed on the surface of the belt-like sheet 104. It is possible to form a film.
  • the control unit 120 controls the flow rate controller 114 to start introducing oxygen gas into the gas supply chamber 145 of the ion source 111.
  • the ion source power supply 117 is turned on.
  • a discharge is generated between the casing 137 and the discharge electrode 142 in the vicinity of the slit 144, and is generated in the vicinity of the plasma mask slit of the supplied oxygen gas.
  • the oxygen gas introduced into the gas supply chamber 145 is ionized and released in a state where the discharge current is increased by the plasma and the efficiency of the ion gas ion is increased.
  • FIG. 14 shows an example in which a bias voltage is applied between the ion source and the rotating drum (underlying substrate).
  • this embodiment is the same as the above embodiment, and the same components are denoted by the same reference numerals, and the description thereof is omitted.
  • the power source device 117 for the ion source has its positive electrode connected to each discharge electrode 142 of the ion source 111 and its negative electrode connected to the casing 137 of the ion source 111.
  • the ion source 111 discharges with the power supply from the ion source power supply device 117 to ionize the oxygen gas.
  • the noise power supply device 161 applies a noise voltage between the belt-like sheet 104, which is the base substrate, and the ion source 111.
  • the positive electrode is connected to the negative electrode of the power source device 117 for the ion source, and the negative electrode is connected to the vacuum chamber 103 and the rotating drum 106 and grounded.
  • a bias voltage is applied between the ion source 111 and the belt-like sheet 104 applied to the rotary drum 106 so that the potential of the ion source 111 becomes high.
  • Oxygen ions which are positive ions output from 111, are attracted to the belt-like sheet 104 by the bias voltage. Therefore, the efficiency of the oxidation of the metal thin film on the strip sheet 104 can be increased, and the oxygen ion patch source 110 emitted from the ion source 111 and the gap between the strip sheet 104 and the oxygen ion patch source 104 can be prevented.
  • the ion source 111 does not affect the operation of the sputter source 110 and the thin film formation due to oxygen ions as much as possible.
  • the bias power supply device 161 may continuously output a constant bias voltage. However, as shown in the example of FIG. 15, the bias power supply device 161 changes in synchronization with the change in the input power of the sputtering source 110. You may let them. In the example of FIG. 15, the bias voltage is lowered during the operation period of the sputtering source 110, and the bias voltage is increased during the idle period!
  • thermoelectron generating means is provided in the ion source.
  • the second embodiment is the same as the first embodiment, and the same components are denoted by the same reference numerals and description thereof is omitted.
  • a pair of filaments 165 are arranged on the front surface of the ion source 111, and each filament 165 is connected to a filament power supply device 166 as shown in FIG.
  • Each filament 165 emits thermoelectrons when a current from the filament power supply 166 flows.
  • Reference numeral 67 denotes a cover having conductivity, which is equipotential with the casing 137 and is given a negative voltage.
  • each filament 165 is supplied by a filament power supply device 166 in order to make it easier to start discharge when an input power is applied to the ion source 111 to generate oxygen ions.
  • An electric current is passed and thermionic electrons are emitted.
  • the emitted thermoelectrons repel the negative voltage cover 167 and travel from the slit 144 to the discharge electrode 142.
  • a discharge current flows, and this triggers a continuous discharge between the discharge electrode 142 and the housing 137.
  • the filament 165 is used as the thermoelectron generating means, but instead of this, there is provided a discharging means for emitting electrons so that discharge is easily performed between adjacent electrodes. Triggering the discharge of the ion source 111 itself
  • the configuration of the sputtering source described in each of the above embodiments is an example, and any sputtering source may be used as the argon gas as long as it can be operated in the transition region mode. It is not limited.
  • examples of forming an oxide film on a PET film have been described.
  • the present invention is not limited to a PET film as a base substrate, and various films, glass, or plastic are used. Various types of plates and lenses can be selected. Moreover, it is not restricted to a long thing.
  • the present invention can be applied to a carousel method in which an oxide film is formed by attaching a base substrate to a rotating drum and repeatedly passing the film formation stage.
  • the present invention is also effective for forming various oxide films such as an acid oxide-humor, an acid silicon, and an oxide-obium, even if the kind of the oxide film is used.
  • Sarakuko is not limited to oxide films, and can be used to create various compound thin films using various reactant gases.
  • the sputtering apparatus of the present invention can be applied to an apparatus that performs surface treatment while conveying a belt-like sheet through a plurality of vacuum chambers. For example, some or all of the vacuum chambers Or other surface treatments that require a vacuum chamber, such as the PVD method or the CVD method. It can be applied to inline surface treatment equipment that combines

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un appareil de pulvérisation en ligne dans lequel, en plus d'une patte de support (45) de chambre à vide soutenant une chambre à vide (2), un mécanisme de transfert d'alimentation (25) disposé à l'intérieur de la chambre à vide (2) est soutenu par une patte de support (46) de système de transfert. La patte de support (46) de système de transfert atteint une surface plancher (15) en pénétrant dans la partie basse de la chambre à vide (2). Un trou traversant par lequel la patte de support (46) de système de transfert pénètre est recouvert d'une matière (55) imperméable à l'air, de type tuyau flexible. La chambre à vide (2) est à l'abri des rayures quand on transfère une feuille (16) en forme de bande même quand la chambre à vide (2) est déformée par suite d'une variation de la pression intérieure.
PCT/JP2007/050460 2006-01-19 2007-01-16 Appareil de pulvérisation et procédé de pulvérisation WO2007083608A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006011569A JP2007191756A (ja) 2006-01-19 2006-01-19 成膜装置及び成膜方法
JP2006011577A JP4693050B2 (ja) 2006-01-19 2006-01-19 インラインスパッタ装置
JP2006-011569 2006-01-19
JP2006-011577 2006-01-19

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WO2007083608A1 true WO2007083608A1 (fr) 2007-07-26

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0586473A (ja) * 1991-09-26 1993-04-06 Kobe Steel Ltd 蒸着めつき設備
JPH06168939A (ja) * 1992-12-01 1994-06-14 Matsushita Electric Ind Co Ltd 酸化物薄膜の製造方法および製造装置
JPH06330319A (ja) * 1993-05-17 1994-11-29 Teijin Ltd 薄膜製造装置
JPH09143676A (ja) * 1995-11-22 1997-06-03 Ishikawajima Harima Heavy Ind Co Ltd 連続真空蒸着装置
JPH09143731A (ja) * 1995-11-28 1997-06-03 Ishikawajima Harima Heavy Ind Co Ltd 真空シール装置
JPH10158830A (ja) * 1996-11-26 1998-06-16 Raiku:Kk スパッタリング成膜方法
JP2003027234A (ja) * 2001-07-19 2003-01-29 Hirano Koon Kk 連続シート状材料の表面処理装置及びそのガスシール構造
JP2003042298A (ja) * 2001-07-25 2003-02-13 Toppan Printing Co Ltd シール装置
JP2003344595A (ja) * 2002-05-31 2003-12-03 Fuji Photo Film Co Ltd シート体製造装置
JP2004232045A (ja) * 2003-01-31 2004-08-19 Asahi Glass Co Ltd スパッタリング方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0586473A (ja) * 1991-09-26 1993-04-06 Kobe Steel Ltd 蒸着めつき設備
JPH06168939A (ja) * 1992-12-01 1994-06-14 Matsushita Electric Ind Co Ltd 酸化物薄膜の製造方法および製造装置
JPH06330319A (ja) * 1993-05-17 1994-11-29 Teijin Ltd 薄膜製造装置
JPH09143676A (ja) * 1995-11-22 1997-06-03 Ishikawajima Harima Heavy Ind Co Ltd 連続真空蒸着装置
JPH09143731A (ja) * 1995-11-28 1997-06-03 Ishikawajima Harima Heavy Ind Co Ltd 真空シール装置
JPH10158830A (ja) * 1996-11-26 1998-06-16 Raiku:Kk スパッタリング成膜方法
JP2003027234A (ja) * 2001-07-19 2003-01-29 Hirano Koon Kk 連続シート状材料の表面処理装置及びそのガスシール構造
JP2003042298A (ja) * 2001-07-25 2003-02-13 Toppan Printing Co Ltd シール装置
JP2003344595A (ja) * 2002-05-31 2003-12-03 Fuji Photo Film Co Ltd シート体製造装置
JP2004232045A (ja) * 2003-01-31 2004-08-19 Asahi Glass Co Ltd スパッタリング方法

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