WO2014071780A1 - 工件台与掩模台公用的平衡质量系统及光刻机 - Google Patents

工件台与掩模台公用的平衡质量系统及光刻机 Download PDF

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Publication number
WO2014071780A1
WO2014071780A1 PCT/CN2013/084005 CN2013084005W WO2014071780A1 WO 2014071780 A1 WO2014071780 A1 WO 2014071780A1 CN 2013084005 W CN2013084005 W CN 2013084005W WO 2014071780 A1 WO2014071780 A1 WO 2014071780A1
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WO
WIPO (PCT)
Prior art keywords
stage
mask
workpiece
mass
interferometer
Prior art date
Application number
PCT/CN2013/084005
Other languages
English (en)
French (fr)
Inventor
王天明
Original Assignee
上海微电子装备有限公司
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Filing date
Publication date
Application filed by 上海微电子装备有限公司 filed Critical 上海微电子装备有限公司
Priority to KR1020157013745A priority Critical patent/KR101682181B1/ko
Priority to US14/437,775 priority patent/US9588444B2/en
Priority to JP2015541000A priority patent/JP2015535613A/ja
Priority to SG11201503039VA priority patent/SG11201503039VA/en
Publication of WO2014071780A1 publication Critical patent/WO2014071780A1/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70766—Reaction force control means, e.g. countermass
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
    • F16F15/00—Suppression of vibrations in systems; Means or arrangements for avoiding or reducing out-of-balance forces, e.g. due to motion
    • F16F15/002—Suppression of vibrations in systems; Means or arrangements for avoiding or reducing out-of-balance forces, e.g. due to motion characterised by the control method or circuitry
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
    • F16F7/00—Vibration-dampers; Shock-absorbers
    • F16F7/10—Vibration-dampers; Shock-absorbers using inertia effect
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
    • F16F7/00—Vibration-dampers; Shock-absorbers
    • F16F7/10—Vibration-dampers; Shock-absorbers using inertia effect
    • F16F7/1005—Vibration-dampers; Shock-absorbers using inertia effect characterised by active control of the mass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70816—Bearings

Definitions

  • the present invention relates to a lithographic apparatus, and more particularly to a balanced mass system and lithography machine common to a workpiece stage and a mask stage. Background technique
  • the lithography precision and yield of the lithography machine directly affect the integration and manufacturing cost of the chip, while the yield and lithography precision are a contradiction.
  • the customer needs to improve the yield and improve the system. Exposure quality and exposure accuracy. Any small vibration in the lithography machine system will interfere with and affect the lithography accuracy, especially the driving force of the motion stage.
  • Balanced quality technology is emerging under these conditions.
  • the force transmitted by the motion stage to the base frame is greatly reduced, which greatly reduces the vibration reduction of the lithography system and avoids the interference of the motion reaction force on the exposure system.
  • the current sports platform balance quality system mainly has two layers, one layer and two layers.
  • the workpiece table of ASML's Twinscan series of lithography machines uses a single-layer balanced mass system. See US patent US7034920, published on April 25, 2006, which uses a balanced mass frame to balance long-stroke motors at X, Y. , Rz in three directions due to the reaction caused by motion acceleration and deceleration, and the use of two sets of five-bar linkage device to achieve the physical connection between the workpiece table balance quality system and the basic frame.
  • the two sets of five-link devices can complete the initialization zero return of the workpiece table balance quality system, and the tracking compensation effect on the workpiece table balance quality system in the motion mode.
  • the two sets of five-bar linkages have four control motors, and the four motors jointly track and control the three degrees of freedom of X, Y, and Rz.
  • the system needs to be decoupled and the control strategy is complicated.
  • Nikon's Tandem dual-system uses a two-layer balanced mass system. See US patent US6885430, published on April 26, 2005. It uses two layers of balanced mass to balance long-stroke motors in three directions: X, Y, and Rz. Motion reaction force generated during acceleration and deceleration; top
  • the layer balance mass is used to balance the motion reaction force generated by a linear motion direction (X or Y) and Rz upward.
  • the top balance mass body and the bottom balance mass body are connected by a compensation motor to achieve the balance between the top layer and the bottom layer.
  • the synchronous motion of the mass body and the correcting and compensating action, the compensating motor is a linear motor.
  • the bottom balance mass is used to balance the motion reaction generated by another linear motion direction (Y or X).
  • the Tandem double-layer balance mass system uses three independent linear motors to achieve the connection between the workpiece table balance mass system and the base frame.
  • the stator of the linear motor is mounted on the base frame, and the mover is mounted on the balance mass of the bottom of the workpiece stage. .
  • the three linear motors are combined to complete the initial zero return of the workpiece stage balance quality system and the tracking compensation effect of the workpiece stage balance quality system in the motion mode.
  • the three linear motors can realize independent control of three degrees of freedom of X, Y and Rz. There is no motion coupling problem, the system does not need to be decoupled, and the control strategy is simple. However, the linear motor used is a linear motor specially developed by Nikon with lateral clearance and displacement. Normal linear motors do not have this function.
  • the typical representative quality of the current lithography machine balance system is ASML's Twinscan platform and Nikon's Tandem platform. Whether it is Twinscan platform or Tandem platform, the workpiece table and mask table of the lithography machine relying on this platform are
  • the use of a separate balanced mass system ie the use of at least two such balanced mass systems, is a common feature of both platforms and has the following disadvantages:
  • a balanced mass system comprising a balanced mass body and an anti-bleed and compensation device, the balanced mass body comprising a first portion for mounting a workpiece table system, a second portion for mounting a mask table system, and for connecting the a third portion of the first and second portions, the first portion of the balanced mass is suspended and supported on a base frame of the lithography machine, and the third portion of the balanced mass is passed through the anti-bleed and compensation device
  • the base frames are connected, and the anti-bleed and compensation device is installed at a position close to the center of gravity of the entire balance mass.
  • the anti-mass moving body can move up and down along the support frame to compensate for real-time changes of the center of gravity of the workpiece table system, the mask table system and the balance quality system as a whole, and to compensate for the overturning of the balance quality system. Torque.
  • the anti-bleed and compensation device is disposed at the same height as the center of gravity of the balanced mass.
  • the invention also discloses a lithography machine, comprising an illumination system, a basic frame, a main damper unit, a main substrate mounted with an objective lens, a workpiece table system for loading the exposure photoresist carrier, and a mask for loading the exposure graphic carrier a die table system and the balance mass system as described above, wherein the main substrate is mounted on the base frame by the main vibration damping unit, and the workpiece table system is suspended and supported on a workpiece table portion of the balanced mass body, The mask stage system is suspended and supported on a mask stage portion of the balanced mass body, and the illumination system projects a pattern on the exposure pattern carrier onto the load exposure photoresist carrier through the objective lens.
  • the workpiece stage system comprises a workpiece table coarse motion stage air floatation, a workpiece table coarse motion stage, a workpiece stage long stroke drive motor, and a workpiece stage for supporting the exposure photoresist carrier.
  • a micro-motion table wherein the workpiece table coarse motion table is supported by the workpiece table coarse-motion stage on the workpiece table portion of the balance mass body, and the workpiece table micro-motion table is disposed on the coarse movement table.
  • the mask stage system comprises a mask stage long-stroke driving motor, a mask table coarse-motion stage, a mask table coarse-motion stage air float, and a mask for adsorbing the exposed pattern carrier.
  • the mask stage coarse motion stage is supported by the mask stage coarse motion stage on the mask stage portion of the balanced mass body, and the mask stage micro-motion stage is disposed on On the coarse motion stage, the mask stage coarse motion stage is connected to the mask stage portion of the balanced mass body through the mask stage long stroke drive motor.
  • the workpiece stage position measuring system comprising a workpiece stage interferometer, a workpiece stage vertical mirror and a main substrate vertical mirror, the workpiece stage
  • the interferometer is fixedly connected to the main substrate, the main substrate vertical mirror is mounted under the main substrate, and the workpiece table vertical mirror is mounted on a side of the workpiece table micro-motion table, the workpiece
  • the interferometer measures the horizontal positional relationship between the workpiece stage system and the objective lens by projecting the workpiece table interferometer horizontally toward the measuring beam on the workpiece stage micro-motion stage and the workpiece stage interferometer horizontally directing the reference beam onto the objective lens.
  • the workpiece table interferometer measures the vertical position of the workpiece stage micro-motion stage and the objective lens by projecting the workpiece table interferometer vertical measuring beam onto the workpiece stage vertical mirror and reflecting to the main substrate vertical mirror relationship.
  • the mask stage position measuring system comprising a mask stage interferometer and a mask for reflecting the vertical measuring beam of the mask stage interferometer a vertical mirror
  • the mask table interferometer is fixedly connected to the main substrate
  • the mask table vertical mirror is mounted on an upper side of the objective lens
  • the mask table interferometer passes the mask
  • the interferometer horizontally measures the horizontal positional relationship between the mask stage system and the objective lens by directing the measuring beam onto the mask stage micro-motion stage and horizontally directing the mask stage interferometer to the objective beam on the objective lens.
  • the mask stage interferometer measures the vertical position of the mask stage micro-motion stage and the objective lens by reflecting the mask stage interferometer vertical measurement beam to the mask stage mirror and then reflecting to the mask stage micro-motion stage relationship.
  • the illumination bracket is fixedly connected to the base frame, and the illumination system is mounted above the exposure pattern carrier by the illumination bracket.
  • the main substrate is provided with a through hole for mounting the objective lens, a part of the objective lens is located at one side of the main substrate, and another part of the objective lens is located at the The other side of the main substrate.
  • the balanced mass system of the present invention includes a first portion for mounting a workpiece table system, a second portion for mounting the mask table system, a third portion connecting the two, and an anti-bleed and compensation device, using the balanced mass system described above
  • the lithography machine changes the structure of the existing workpiece table system and the mask table system using a separate balanced mass system, but the workpiece stage system and the mask table system share a set of balanced quality systems, thus having the following advantages:
  • the common balanced mass system can directly support the mask stage system, thereby saving the external support of the mask stage system and reducing the volume and weight of the entire lithography machine;
  • the workpiece table system and the mask table system share a set of balanced mass system and its balanced mass body anti-drift and compensation device.
  • the motion reaction force of the motion table can cancel each other to a certain extent, so that the quality of the common balanced mass body is It is smaller than the sum of the independent balanced mass bodies corresponding to the workpiece table system and the mask table system.
  • FIG. 1 is a schematic structural view of a lithography machine according to an embodiment of the present invention. detailed description
  • a lithography machine of the present invention includes an illumination system 34, a slate out frame 1, a main damper unit 2, a main substrate 33 on which the objective lens 19 is mounted, a workpiece stage system for loading the exposure photoresist carrier 27, A mask table system for loading the exposure pattern carrier 24 and a balanced mass system.
  • the main substrate 33 is mounted on the base stone exit frame 1 by the main damping unit 2, and the illumination system 34 is configured to project a graphic on the exposure pattern carrier 24 through the objective lens 19 to the loading.
  • the photoresist carrier 27 is exposed.
  • the balanced mass system includes a balanced mass body and an anti-bleed and compensation device 16, the balanced mass body including a first portion 11 for mounting a workpiece table system, a second portion 20 for mounting a mask table system, and a first The three portions 14, the first portion 11 of the balancing mass and the second portion 20 of the balancing mass are connected by a third portion 14 of the balancing mass.
  • the workpiece table system is suspended and supported on the first portion 11 of the balanced mass body.
  • the first portion 11 of the balanced mass body is suspended and supported on the base frame 1.
  • the mask table system is suspended and supported on the balanced mass body.
  • the third portion 14 of the balanced mass is connected to the base frame 1 by the anti-bleed and compensation device 16, and the anti-drift and compensation device 16 is adjacent to the entire balance mass
  • the center of gravity position 15 is set.
  • the lithography machine of the present invention changes the existing workpiece table system and mask table system using independent flat Balance the structure of the mass system, but share a set of balanced mass systems with the workpiece table system and the mask table system.
  • the first part of the balanced mass body 11 , the second part of the balanced mass body 20 and the third of the balanced mass body The sections 14 collectively form a common balanced mass of the workpiece stage system and the mask stage system.
  • the overall structure can be made more compact; on the other hand, the common balanced mass system can directly support the mask table system, thereby saving the external support of the mask table system and reducing the size and weight of the whole machine; Aspects, the workpiece table system and the mask table system share a set of balanced mass bodies and their anti-bleed and compensation devices 16, and the motion reaction forces of the motion tables (including the workpiece table system and the mask table system) can cancel each other to a certain extent, The mass of the common balanced mass is less than the sum of the respective balanced masses of the workpiece table system and the mask table system.
  • the anti-bleed and compensation device 16 is used for controlling and compensating the whole of the first portion 11 of the balanced mass body, the second portion 20 of the balanced mass body, and the third portion 14 of the balanced mass body. Horizontal position (x, y, Rz).
  • the anti-blanching and compensating device 16 corresponds to the center of gravity position 15 of the balanced mass body.
  • the two are at the same vertical height, or are located in the same horizontal plane, so that the anti-blanching and compensating device 16 can be better.
  • the anti-mass motion system includes an inverse mass support frame 17 and an inverse mass moving body 18, the anti-mass support frame 17 being fixedly coupled to the third portion 14 of the balanced mass body, the anti-mass moving body 18 being capable of following
  • the support frame 17 moves up and down, which can compensate the real-time change of the center of gravity of the entire motion stage and the balance quality system as a whole.
  • the acceleration and deceleration motion of the anti-mass moving body 18 can generate a counter torque for compensating the motion stage and the balance quality system. Overturning moment.
  • the workpiece table system comprises a workpiece table coarse motion table air float 9, a workpiece table coarse motion table 12, a workpiece stage long stroke driving motor 13 and a workpiece stage micro-motion stage 10 for supporting the exposure photoresist carrier 27, the workpiece stage coarse motion stage 12 is suspended and supported by the workpiece table coarse motion stage air floating 9
  • the workpiece stage micro-motion stage 10 is disposed on the coarse motion stage 12, and the workpiece stage coarse motion stage 12 is connected to the first portion 11 of the balanced mass body by the long-stroke driving motor 13. .
  • the mask table system comprises a mask stage long-stroke drive motor 21, a mask table coarse motion stage 22, a mask table coarse-motion stage air float 25, and a mask stage fretting for adsorbing the exposure pattern carrier 24.
  • the mask table coarse motion stage 22 is suspended and supported by the mask stage coarse motion stage air float 25 on the second portion 20 of the balanced mass body, and the mask stage micro motion stage 23 is disposed on the stage 23 On the coarse motion stage 22, the mask stage coarse motion stage 22 is connected to the second portion 20 of the balanced mass body via the mask stage long stroke drive motor 21.
  • the lithography machine further comprises a workpiece table position measuring system
  • the workpiece table position measuring system comprises a workpiece table interferometer measuring bracket 32, and a workpiece table interferometer disposed on the workpiece table interferometer measuring bracket 32
  • the workpiece stage vertical mirror 7 and the main substrate vertical mirror 3 are fixedly connected to the main substrate 33, and the main substrate vertical mirror 3 is mounted.
  • the workpiece stage vertical mirror 7 is mounted on a side surface of the workpiece stage micro-motion stage 10, and the workpiece stage interferometer is horizontally incident on the measuring beam 6 by the workpiece stage interferometer.
  • the horizontal positional relationship between the workpiece stage system and the objective lens 19 is measured on the workpiece stage fine movement stage 10 and the workpiece stage interferometer is horizontally incident on the objective lens 19, and the workpiece stage interferometer is vertically moved by the workpiece stage interferometer
  • the measuring beam 5 is incident on the workpiece stage vertical reflecting mirror 7, and is reflected by the vertical reflecting mirror 7 to the main substrate vertical reflecting mirror 3 to measure the vertical positional relationship between the workpiece stage fine moving table 10 and the objective lens 19.
  • the workpiece table interferometer emitted from the workpiece table interferometer is horizontally directed to the workpiece stage micro-motion stage 10 and reflected back to the workpiece stage interferometer; the workpiece emitted from the workpiece stage interferometer The interferometer is horizontally directed to the reference beam 4, incident on the objective lens and reflected back to the workpiece table interferometer; the workpiece table interferometer from the workpiece table interferometer vertically measures the beam 5, and is vertically reflected by the workpiece table After the mirror 7 is reflected to the main substrate vertical mirror 3, the original path is returned to the workpiece stage Interferometer.
  • the lithography machine further comprises a mask stage position measuring system
  • the mask stage position measuring system comprises a mask stage interferometer measuring bracket 30 and a mask disposed on the mask table interferometer measuring bracket 30.
  • the mask stage interferometer emitted from the mask stage interferometer is directed to the mask stage micro-motion stage 23 and is reflected back to the mask stage interferometer horizontally; from the mask stage interferometer The emitted mask table interferometer is horizontally directed to the reference beam 28, incident on the objective lens 19 and reflected back to the mask table interferometer; the mask table interferometer is vertically measuring the beam from the mask table interferometer 29. After the mask stage vertical mirror 31 is reflected to the mask stage micro-motion stage 23, the original path returns to the mask stage interferometer.
  • the main substrate 33 and the objective lens 19 mounted on the main substrate 33, the workpiece table interferometer, the mask table interferometer, and the main substrate vertical mirror 3 pass through the main damper unit 2 and the sill out frame 1 The outside world is isolated.
  • the lithography machine further includes an illumination bracket 35, the illumination bracket 35 is fixedly connected to the slate out frame 1, and the illumination system 34 is mounted on the exposure pattern carrier 24 through the illumination bracket 35.
  • the illumination bracket 35 is fixedly connected to the slate out frame 1
  • the illumination system 34 is mounted on the exposure pattern carrier 24 through the illumination bracket 35.
  • the main substrate 33 is provided with a through hole for mounting the objective lens 19, and a part of the objective lens 19 is located at one side of the main substrate 33 (in the present embodiment, below the main substrate 33). Another portion of the objective lens 19 is located on the other side of the main substrate 33 (above the main substrate 33 in this embodiment).
  • the balanced mass system of the present invention includes a first portion for mounting a workpiece table system, A second portion for mounting the mask table system, a third portion connecting the two, and an anti-bleed and compensation device, the existing workpiece table system and mask table system are changed using the above-described balance quality system lithography machine
  • the common balanced mass system can directly support the mask table system, thereby saving the external support of the mask table system and reducing the size and weight of the whole machine;
  • the workpiece table system and the mask table system share a set of balanced mass system and its balanced mass body anti-bleed and compensation device.
  • the motion reaction force of the motion table can cancel each other to a certain extent, so that the quality of the common balanced mass body is It is smaller than the sum of the independent balanced mass bodies corresponding to the workpiece table system and the mask table system.

Abstract

一种工件台与掩模台公用的平衡质量系统，包括平衡质量体以及防漂及补偿装置（16），平衡质量体包括用于安装工件台系统的第一部分（11）、用于安装掩模台系统的第二部分（20）以及用于连接第一部分（11）与第二部分（20）的一第三部分（14），平衡质量体的第一部分（11）悬浮支撑于光刻机的基础框架（1）上，平衡质量体的第三部分（14）通过防漂及补偿装置（16）与基础框架（1）相连，防漂及补偿装置（16）靠近整个平衡质量体的重心位置设置。采用平衡质量系统能够节省掩模台系统的外部支架，减小光刻机的体积和重量，以及较少所需平衡质量的质量，使得整体结构更加紧凑。

Description

工件台与掩模台公用的平衡质量系统及光刻机 技术领域
本发明涉及一种光刻设备， 尤其涉及一种工件台与掩模台公用的平衡质 量系统及光刻机。 背景技术
光刻机的光刻精度和产率高低直接影响着芯片的集成度和制造成本， 而 产率和光刻精度是一对矛盾体， 客户既要系统提高产率， 又要改善和提高系 统的曝光质量和曝光精度。 而光刻机整机系统中的任何微小振动都会干扰并 影响到光刻精度， 尤其是运动台的驱动反力的影响。
平衡质量技术正是在这种条件下出现的。 通过平衡质量技术， 运动台传 递给基础框架的作用力会大幅降低， 这在很大程度上减少了光刻机系统的减 振难度， 避免了运动反力对曝光系统的干扰。
当前的运动台平衡质量系统主要有单层和双层两种。 ASML 公司的 Twinscan系列光刻机的工件台采用单层平衡质量系统， 具体可以参见 2006年 04月 25日公开的美国专利 US7034920 ,它是利用一层平衡质量框架来平衡长 行程电机在 X, Y, Rz三个方向上因运动加减速所产生的反作用力， 并采用 两组五连杆装置实现工件台平衡质量系统与基础框架间的物理连接。 两组五 连杆装置可以完成工件台平衡质量系统的初始化回零， 以及运动模式下对工 件台平衡质量系统跟踪补偿作用。 不过， 两组五连杆机构拥有四个控制电机， 四个电机联合一体跟踪控制 X, Y, Rz三个自由度， 系统需解耦， 控制策略 复杂。
Nikon公司的 Tandem双台系统采用双层平衡质量系统， 具体可以参见 2005年 04月 26日公开的美国专利 US6885430, 它采用两层平衡质量分别平 衡长行程电机在 X, Y, Rz三个方向上加减速运动时所产生的运动反力； 顶 层平衡质量体用来平衡一个线性运动方向（X或 Y )和 Rz向上所产生的运动 反力， 顶层平衡质量体与底层平衡质量体间通过补偿电机连接， 用以实现顶 层和底层两个平衡质量体的同步运动以及纠偏和补偿作用， 该补偿电机为一 直线电机。 底层平衡质量体则用来平衡另外一个线性运动方向上（Y或 X ) 所产生的运动反力。 Tandem双层平衡质量系统采用三个独立的直线电机用来 实现工件台平衡质量系统与基础框架间的连接作用， 直线电机的定子安装在 基础框架上， 动子安装在工件台底层平衡质量体上。 三个直线电机联合起来 可以完成工件台平衡质量系统的初始化回零， 以及运动模式下对工件台平衡 质量系统的跟踪补偿作用。 三个直线电机可以实现 X, Y, Rz三个自由度的 独立控制， 不存在运动耦合问题， 系统无需解耦， 控制策略简单。 但是所采 用的直线电机是 Nikon公司特别开发的具有侧向间隙和位移的直线电机， 普 通直线电机不具有这种功能。
因此当前的光刻机平衡质量典型代表系统分别为 ASML公司的 Twinscan 平台和 Nikon公司的 Tandem平台， 不管是 Twinscan平台还是 Tandem平台， 依托这种平台的光刻机的工件台和掩模台均是使用独立的平衡质量系统， 即 至少采用两套这样的平衡质量系统， 这是这两种平台的共同特点， 均具有如 下缺点：
( 1 ) 整机结构不够紧凑；
( 2 ) 需要掩模台系统的外部支架， 整机的体积和重量比较大；
( 3 ) 两个独立的平衡质量体的质量之和比较大。
因此， 如何提供一种整体结构更加紧凑、 体积更小的平衡质量系统及光 刻机是本领域技术人员亟待解决的一个技术问题。 发明内容
本发明的目的在于提供一种平衡质量系统及光刻机， 能够节省掩模台系 统的外部支架， 减小整机的体积和重量， 以及减少所需平衡质量体的质量， 使得整体结构更加紧凑。
为了达到上述的目的， 发明采用如下技术方案：
一种平衡质量系统， 包括平衡质量体以及防漂及补偿装置， 所述平衡质 量体包括用于安装工件台系统的第一部分、 用于安装掩模台系统的第二部分 以及用于连接所述第一、 第二部分的第三部分， 所述平衡质量体的第一部分 悬浮支撑于光刻机的基础框架上， 所述平衡质量体的第三部分通过所述防漂 及补偿装置与所述基础框架相连， 所述防漂及补偿装置安装在靠近整个所述 平衡质量体的重心位置处。
优选的， 在上述的平衡质量系统中， 还包括反质量运动系统， 所述反质 量运动系统包括反质量支撑框架以及反质量运动体， 所述反质量支撑框架与 所述平衡质量体的第三部分固定连接， 所述反质量运动体能够沿着支撑框架 上下运动， 用以补偿所述工件台系统、 掩模台系统及平衡质量系统作为整体 的重心的实时变化以及补偿该平衡质量系统的倾覆力矩。
优选的， 在上述的平衡质量系统中， 所述防漂及补偿装置设置在与所述 平衡质量体的重心同一高度处。
本发明还公开了一种光刻机， 包括照明系统、 基础框架、 主减振单元、 安装有物镜的主基板、 用于装载曝光光阻载体的工件台系统、 用于装载曝光 图形载体的掩模台系统以及如上所述的平衡质量系统， 所述主基板通过所述 主减振单元安装于所述基础框架上， 所述工件台系统悬浮支撑于所述平衡质 量体的工件台部分上， 所述掩模台系统悬浮支撑于所述平衡质量体的掩模台 部分上， 所述照明系统将所述曝光图形载体上的图形经过所述物镜投影到所 述装载曝光光阻载体上。
优选的， 在上述的光刻机中， 所述工件台系统包括工件台粗动台气浮、 工件台粗动台、 工件台长行程驱动电机以及用于支撑所述曝光光阻载体的工 件台微动台， 所述工件台粗动台通过所述工件台粗动台气浮悬浮支撑于所述 平衡质量体的工件台部分上， 所述工件台微动台设置于粗动台上， 所述工件 优选的， 在上述的光刻机中， 所述掩模台系统包括掩模台长行程驱动电 机、 掩模台粗动台、 掩模台粗动台气浮以及用于吸附曝光图形载体的掩模台 微动台， 所述掩模台粗动台通过所述掩模台粗动台气浮悬浮支撑于所述平衡 质量体的掩模台部分上， 所述掩模台微动台设置于所述粗动台上， 所述掩模 台粗动台通过掩模台长行程驱动电机与平衡质量体的掩模台部分连接。
优选的， 在上述的光刻机中， 还包括工件台位置测量系统， 所述工件台 位置测量系统包括工件台干涉仪、 工件台垂向反射镜以及主基板垂向反射镜， 所述工件台干涉仪与所述主基板固定连接， 所述主基板垂向反射镜安装于所 述主基板的下方， 所述工件台垂向反射镜安装于所述工件台微动台的侧面， 所述工件台干涉仪通过将工件台干涉仪水平向测量光束射在工件台微动台上 以及工件台干涉仪水平向参考光束射在物镜上来测量工件台系统与所述物镜 的水平向位置关系， 所述工件台干涉仪通过将工件台干涉仪垂向测量光束射 到工件台垂向反射镜后 , 经反射至主基板垂向反射镜来测量所述工件台微动 台与所述物镜的垂向位置关系。
优选的， 在上述的光刻机中， 还包括掩模台位置测量系统， 所述掩模台 位置测量系统包括掩模台干涉仪以及用于反射掩模台干涉仪垂向测量光束的 掩模台垂向反射镜， 所述掩模台干涉仪与所述主基板固定连接， 所述掩模台 垂向反射镜安装于所述物镜的上部侧面， 所述掩模台干涉仪通过将掩模台干 涉仪水平向测量光束射在掩模台微动台上以及将掩模台干涉仪水平向参考光 束射在物镜上来测量所述掩模台系统与所述物镜的水平向位置关系 , 所述掩 模台干涉仪通过将掩模台干涉仪垂向测量光束射到掩模台反射镜后反射至掩 模台微动台来测量所述掩模台微动台与所述物镜的垂向位置关系。
优选的， 在上述的光刻机中， 还包括照明支架， 所述照明支架与所述基 础框架固定连接， 所述照明系统通过所述照明支架安装于所述曝光图形载体 的上方。 优选的， 在上述的光刻机中， 所述主基板上设有用于安装所述物镜的通 孔， 所述物镜的一部分位于所述主基板的一侧， 所述物镜的另一部分位于所 述主基板的另一侧。
本发明的平衡质量系统包括用于安装工件台系统的第一部分、 用于安装 掩模台系统的第二部分、 连接前述两者的第三部分、 以及防漂及补偿装置， 采用上述平衡质量系统的光刻机改变了现有的工件台系统和掩模台系统均使 用独立的平衡质量系统的结构， 而是将工件台系统和掩模台系统公用一套平 衡质量系统， 因而具有以下优点：
( 1 ) 整体结构更为紧凑；
( 2 ) 公用的平衡质量系统可以直接支撑掩模台系统， 从而节省了掩模台 系统的外部支架， 减小光刻机整机的体积和重量；
( 3 ) 工件台系统及掩模台系统公用一套平衡质量系统及其平衡质量体 防漂及补偿装置， 运动台的运动反力一定程度上可以相互抵消， 使得公用的 平衡质量体的质量要小于工件台系统及掩模台系统各自对应的独立的平衡质 量体的和。
另外， 通过在平衡质量系统中配置垂向运动的反质量系统， 可以补偿运 动过程中的重心变化和产生的倾覆力矩。 附图说明
本发明的平衡质量系统及光刻机由以下的实施例及附图给出。
图 1为本发明一实施例的光刻机的结构示意图。 具体实施方式
下面将参照附图对发明进行更详细的描述， 其中表示了发明的优选实施 例， 应该理解本领域技术人员可以修改在此描述的发明而仍然实现发明的有 利效果。 因此， 下列描述应当被理解为对于本领域技术人员的广泛知道， 而 并不作为对发明的限制。
为了清楚， 不描述实际实施例的全部特征。 在下列描述中， 不详细描述 公知的功能和结构， 因为它们会使发明由于不必要的细节而混乱。 应当认为 在任何实际实施例的开发中， 必须作出大量实施细节以实现开发者的特定目 标， 例如按照有关系统或有关商业的限制， 由一个实施例改变为另一个实施 例。 另外， 应当认为这种开发工作可能是复杂和耗费时间的， 但是对于本领 域技术人员来说仅仅是常规工作。
为使发明的目的、 特征更明显易懂， 下面结合附图对发明的具体实施方 式作进一步的说明。 需说明的是， 附图均采用非常简化的形式且均使用非精 准的比率， 仅用以方便、 明晰地辅助说明发明实施例的目的。
请参阅图 1 , 本发明的光刻机， 包括照明系统 34、 基石出框架 1、 主减振单 元 2、 安装有物镜 19的主基板 33、 用于装载曝光光阻载体 27的工件台系统、 用于装载曝光图形载体 24的掩模台系统以及一平衡质量系统。所述主基板 33 通过所述主减振单元 2安装于所述基石出框架 1上， 所述照明系统 34用于将所 述曝光图形载体 24上的图形经过所述物镜 19投影到所述装载曝光光阻载体 27上。
所述平衡质量系统， 包括平衡质量体以及防漂及补偿装置 16, 所述平衡 质量体包括用于安装工件台系统的第一部分 11、 用于安装掩模台系统的第二 部分 20以及一第三部分 14, 所述平衡质量体的第一部分 11与所述平衡质量 体的第二部分 20通过所述平衡质量体的第三部分 14连接。 所述工件台系统 悬浮支撑于所述平衡质量体的第一部分 11上，所述平衡质量体的第一部分 11 悬浮支撑于基础框架 1 上， 所述掩模台系统悬浮支撑于所述平衡质量体的第 二部分 20上， 所述平衡质量体的第三部分 14通过所述防漂及补偿装置 16与 所述基 框架 1相连， 所述防漂及补偿装置 16靠近整个所述平衡质量体的重 心位置 15设置。
本发明的光刻机改变了现有的工件台系统和掩模台系统均使用独立的平 衡质量系统的结构， 而是将工件台系统和掩模台系统公用一套平衡质量系统， 图中， 平衡质量体的第一部分 11 , 平衡质量体的第二部分 20及平衡质量体的 第三部分 14共同组成工件台系统及掩模台系统的公用的平衡质量体。一方面， 可以使得整体结构更为紧凑； 另一方面， 公用的平衡质量系统可以直接支撑 掩模台系统， 从而节省了掩模台系统的外部支架， 减小整机的体积和重量； 再一方面， 工件台系统及掩模台系统公用一套平衡质量体及其防漂及补偿装 置 16, 运动台 （包括工件台系统及掩模台系统） 的运动反力一定程度上可以 相互抵消， 使得公用的平衡质量体的质量要小于工件台系统及掩模台系统各 自对应的独立的平衡质量体的和。
其中， 所述防漂及补偿装置 16用于控制及补偿所述平衡质量体的第一部 分 11、 所述平衡质量体的第二部分 20以及所述平衡质量体的第三部分 14组 成的整体的水平向位置（x,y,Rz )。
优选的， 所述防漂及补偿装置 16与所述平衡质量体的重心位置 15相对 应， 本实施例中， 两者处在同一垂直高度处， 或者说位于同一水平面内， 从 而可以更好的平衡工件台系统及掩模台系统传递给基石出框架 1 的作用力， 减 少光刻机系统的减振难度， 避免运动反力对曝光过程的干扰。
因工件台长行程驱动电机 13以及掩模台长行程驱动电机 21 高度不同、 不共面， 势必会造成倾覆力矩， 同时工件台系统及掩模台系统不同步运动时， 会使整个运动台及平衡质量系统的重心发生变化， 为了应对这一工况， 在上 述的平衡质量系统中引入一反质量运动系统。 所述反质量运动系统包括反质 量支撑框架 17以及反质量运动体 18, 所述反质量支撑框架 17与所述平衡质 量体的第三部分 14固定连接， 所述反质量运动体 18能够沿着支撑框架 17上 下运动， 可以补偿整个运动台及平衡质量系统作为整体的重心的实时变化， 同时， 反质量运动体 18的加速减速运动， 可以产生一个反力矩， 用以补偿运 动台及平衡质量系统的倾覆力矩。
优选的， 所述工件台系统包括工件台粗动台气浮 9、 工件台粗动台 12、 工件台长行程驱动电机 13 以及用于支撑所述曝光光阻载体 27的工件台微动 台 10,所述工件台粗动台 12通过工件台粗动台气浮 9悬浮支撑于所述平衡质 量体的第一部分 11上， 所述工件台微动台 10设置于粗动台 12上， 所述工件 台粗动台 12通过所述长行程驱动电机 13与所述平衡质量体的第一部分 11连 接。
优选的， 所述掩模台系统包括掩模台长行程驱动电机 21、 掩模台粗动台 22、掩模台粗动台气浮 25以及用于吸附曝光图形载体 24的掩模台微动台 23 , 所述掩模台粗动台 22通过所述掩模台粗动台气浮 25悬浮支撑于所述平衡质 量体的第二部分 20上， 所述掩模台微动台 23设置于所述粗动台 22上， 所述 掩模台粗动台 22通过所述掩模台长行程驱动电机 21与所述平衡质量体的第 二部分 20连接。
优选的， 所述的光刻机还包括工件台位置测量系统， 所述工件台位置测 量系统包括工件台干涉仪测量支架 32、设置在工件台干涉仪测量支架 32上的 工件台干涉仪（图中未示出）、 工件台垂向反射镜 7以及主基板垂向反射镜 3 , 所述工件台干涉仪测量支架 32与所述主基板 33 固定连接， 所述主基板垂向 反射镜 3安装于所述主基板 33的下方， 所述工件台垂向反射镜 7安装于所述 工件台微动台 10的侧面， 所述工件台干涉仪通过将工件台干涉仪水平向测量 光束 6射在工件台微动台 10上以及将工件台干涉仪水平向参考光束 4射在物 镜 19上来测量工件台系统与物镜 19的水平向位置关系， 所述工件台干涉仪 通过将工件台干涉仪垂向测量光束 5射至工件台垂向反射镜 7上， 经垂向反 射镜 7反射至主基板垂向反射镜 3来测量所述工件台微动台 10与所述物镜 19 的垂向位置关系。 具体的， 从工件台干涉仪发出的工件台干涉仪水平向测量 光束 6射至所述工件台微动台 10并被反射回所述工件台干涉仪； 从所述工件 台干涉仪发出的工件台干涉仪水平向参考光束 4 ,射至所述物镜并被反射回所 述工件台干涉仪； 从工件台干涉仪发出的工件台干涉仪垂向测量光束 5 , 经所 述工件台垂向反射镜 7反射至主基板垂向反射镜 3后原路返回到所述工件台 干涉仪。
优选的， 所述的光刻机还包括掩模台位置测量系统， 所述掩模台位置测 量系统包括掩模台干涉仪测量支架 30、设置在掩模台干涉仪测量支架 30上的 掩模台干涉仪（图中未示出）以及用于反射掩模台干涉仪垂向测量光束 29的 掩模台垂向反射镜 31 , 所述掩模台干涉仪测量支架 30与所述主基板 33固定 连接， 所述掩模台垂向反射镜 31安装于所述物镜 19的上部侧面， 所述掩模 台干涉仪通过将掩模台干涉仪水平向测量光束 26射在掩模台微动台 23上以 及将掩模台干涉仪水平向参考光束 28射在物镜 19上测量掩模台系统与物镜 19的水平向位置关系， 所述掩模台干涉仪通过掩模台干涉仪垂向测量光束 29 测量所述掩模台微动台 23与物镜 19的垂向位置关系。 具体的， 从掩模台干 涉仪发出的掩模台干涉仪水平向测量光束 26射至所述掩模台微动台 23并被 反射回掩模台干涉仪； 从所述掩模台干涉仪发出的掩模台干涉仪水平向参考 光束 28 ,射至所述物镜 19并被反射回所述掩模台干涉仪； 从所述掩模台干涉 仪发出的掩模台干涉仪垂向测量光束 29,经所述掩模台垂向反射镜 31反射至 掩模台微动台 23后原路返回到所述掩模台干涉仪。
所述主基板 33以及安装于主基板 33上的物镜 19、 工件台干涉仪、 掩模 台干涉仪以及主基板垂向反射镜 3均通过所述主减振单元 2与所述基石出框架 1 的外部世界隔离。
优选的， 所述的光刻机还包括照明支架 35 , 所述照明支架 35与所述基石出 框架 1 固定连接， 所述照明系统 34通过所述照明支架 35安装于所述曝光图 形载体 24的上方。
优选的， 所述主基板 33上设有用于安装所述物镜 19的通孔， 所述物镜 19的一部分位于所述主基板 33的一侧（本实施例中为主基板 33的下方）， 所 述物镜 19的另一部分位于所述主基板 33的另一侧 （本实施例中为主基板 33 的上方）。
综上所述本发明的平衡质量系统包括用于安装工件台系统的第一部分、 用于安装掩模台系统的第二部分、 连接前述两者的第三部分、 以及防漂及补 偿装置， 采用上述平衡质量系统的光刻机改变了现有的工件台系统和掩模台 系统均使用独立的平衡质量系统的结构， 而是将工件台系统和掩模台系统公 用一套平衡质量系统， 因而具有以下优点：
( 1 ) 整体结构更为紧凑；
( 2 ) 公用的平衡质量系统可以直接支撑掩模台系统，从而节省了掩模台系 统的外部支架， 减小整机的体积和重量；
( 3 ) 工件台系统及掩模台系统公用一套平衡质量系统及其平衡质量体防 漂及补偿装置，运动台的运动反力一定程度上可以相互抵消，使得公 用的平衡质量体的质量要小于工件台系统及掩模台系统各自对应的 独立的平衡质量体的和。
另外， 通过在平衡质量系统中配置垂向运动的反质量系统， 可以补偿运 动过程中的重心变化和产生的倾覆力矩。
显然， 本领域的技术人员可以对发明进行各种改动和变型而不脱离发明 的精神和范围。 这样， 倘若发明的这些修改和变型属于发明权利要求及其等 同技术的范围之内， 则发明也意图包含这些改动和变型在内。

Claims

权利要求
1. 一种用于光刻机的平衡质量系统， 包括：
一平衡质量体， 包含：
一第一部分， 悬浮设置于所述光刻机的一基础框架上， 用于支撑所 述光刻机的一工件台系统；
一第二部分， 用于支撑所述光刻机的一掩模台系统； 以及
一第三部分， 用于连接所述第一部分与所述第二部分；
其中， 所述平衡质量系统还包括一防漂及补偿装置， 靠近所述平衡质量 体的重心位置设置， 用于将所述平衡质量体的第三部分连接至所述基 框架。
2. 根据权利要求 1所述的平衡质量系统， 其特征在于， 还包括反质量运 动系统， 所述反质量运动系统包括反质量支撑框架以及反质量运动体， 所述 反质量支撑框架与所述平衡质量体的第三部分固定连接， 所述反质量运动体 能够沿着所述反质量支撑框架上下运动， 用以补偿所述工件台系统、 掩模台 系统及平衡质量系统作为整体的重心的实时变化以及补偿该平衡质量系统的 倾覆力矩。
3. 根据权利要求 1所述的平衡质量系统， 其特征在于， 所述防漂及补偿 装置设置在与所述平衡质量体的重心同一高度处。
4.一种光刻机， 包括：
基础框架；
主基板， 承载有一物镜和干涉仪测量系统且通过一主减振单元安装于所 述基础框架上；
工件台系统， 用于装载曝光光阻载体；
掩模台系统， 用于装载曝光图形载体；
照明系统， 用于将所述曝光图形载体上的图形经过所述物镜投影到所述 曝光光阻载体上； 以及 平衡质量系统， 其包括一平衡质量体和一防漂及补偿装置； 其中所述平衡质量体包含：
一第一部分， 悬浮设置于所述基础框架上， 用于支撑所述工件台系 统；
一第二部分， 用于支撑所述掩模台系统； 以及
一第三部分， 用于连接所述第一部分与所述第二部分；
其中， 所述防漂及补偿装置靠近所述平衡质量体的重心位置设置， 用于 将所述平衡质量体的第三部分连接至所述基础框架。
5. 根据权利要求 4所述的光刻机， 其特征在于， 所述平衡质量系统还包 括反质量运动系统， 所述反质量运动系统包括反质量支撑框架以及反质量运 动体， 所述反质量支撑框架与所述平衡质量体的第三部分固定连接， 所述反 质量运动体能够沿着所述反质量支撑框架上下运动， 用以补偿所述工件台系 统、 掩模台系统及平衡质量系统作为整体的重心的实时变化以及补偿该平衡 质量系统的倾覆力矩。
6. 根据权利要求 4所述的光刻机， 其特征在于， 所述防漂及补偿装置设 置在与所述平衡质量体的重心同一高度处。
7. 根据权利要求 4所述的光刻机， 其特征在于， 所述工件台系统包括工 件台粗动台气浮、 工件台粗动台、 工件台长行程驱动电机以及用于支撑所述 曝光光阻载体的工件台微动台， 所述工件台粗动台通过所述工件台粗动台气 浮悬浮支撑于所述平衡质量体的工件台部分上， 所述工件台微动台设置于粗 件台部分连接。
8. 根据权利要求 4所述的光刻机， 其特征在于， 所述掩模台系统包括掩 模台长行程驱动电机、 掩模台粗动台、 掩模台粗动台气浮以及用于吸附曝光 图形载体的掩模台微动台， 所述掩模台粗动台通过所述掩模台粗动台气浮悬 浮支撑于所述平衡质量体的掩模台部分上， 所述掩模台微动台设置于所述粗 动台上， 所述掩模台粗动台通过所述掩模台长行程驱动电机与所述平衡质量 体的掩模台部分连接。
9. 根据权利要求 4所述的光刻机， 其特征在于， 还包括工件台位置测量 系统， 所述工件台位置测量系统包括工件台干涉仪测量支架、 工件台干涉仪、 工件台垂向反射镜以及主基板垂向反射镜， 所述工件台干涉仪设置在所述工 件台干涉仪支架上， 所述工件台干涉仪测量支架与所述主基板固定连接， 所 述主基板垂向反射镜安装于所述主基板的下方， 所述工件台垂向反射镜安装 于所述工件台微动台的侧面， 所述工件台干涉仪通过将工件台干涉仪水平向 测量工件台系统与物镜的水平向位置关系， 所述工件台干涉仪通过所述工件 台干涉仪垂向测量光束测量所述工件台微动台与所述物镜的垂向位置关系。
10. 根据权利要求 4所述的光刻机， 其特征在于，还包括掩模台位置测量 系统， 所述掩模台位置测量系统包括掩模台干涉仪测量支架、 设置在所述掩 模台测量支架上的掩模台干涉仪以及用于反射掩模台干涉仪垂向测量光束的 掩模台垂向反射镜， 所述掩模台干涉仪测量支架与所述主基板固定连接， 所 述掩模台垂向反射镜安装于所述物镜的上部侧面 , 所述掩模台干涉仪通过将 掩模台干涉仪水平向测量光束射在掩模台微动台上以及将掩模台干涉仪水平 向参考光束射在物镜上来测量所述掩模台系统与所述物镜的水平向位置关 系， 所述掩模台干涉仪通过所述掩模台干涉仪垂向测量光束测量所述掩模台 微动台与所述物镜的垂向位置关系。
11. 根据权利要求 4所述的光刻机， 其特征在于， 还包括照明支架， 所述 照明支架与所述基础框架固定连接， 所述照明系统通过所述照明支架安装于 所述曝光图形载体的上方。
12. 根据权利要求 4所述的光刻机， 其特征在于， 所述主基板上设有用于 安装所述物镜的通孔， 所述物镜的一部分位于所述主基板的一侧， 所述物镜 的另一部分位于所述主基板的另一侧。
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