WO2014069079A1 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

Info

Publication number
WO2014069079A1
WO2014069079A1 PCT/JP2013/072438 JP2013072438W WO2014069079A1 WO 2014069079 A1 WO2014069079 A1 WO 2014069079A1 JP 2013072438 W JP2013072438 W JP 2013072438W WO 2014069079 A1 WO2014069079 A1 WO 2014069079A1
Authority
WO
WIPO (PCT)
Prior art keywords
phosphoric acid
substrate
wafer
aqueous solution
storage tank
Prior art date
Application number
PCT/JP2013/072438
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
喬 太田
橋詰　彰夫
大輝 日野出
Original Assignee
大日本スクリーン製造株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大日本スクリーン製造株式会社 filed Critical 大日本スクリーン製造株式会社
Publication of WO2014069079A1 publication Critical patent/WO2014069079A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Definitions

  • This invention relates to a substrate processing apparatus.
  • substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field (Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks.
  • substrate semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field (Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks.
  • substrate substrate, ceramic substrate, solar cell substrate and the like.
  • the silicon nitride film is selectively removed by supplying a high-temperature phosphoric acid aqueous solution as an etchant to the surface of the substrate on which the silicon nitride film and the silicon oxide film are formed.
  • a phosphoric acid etching process is performed as necessary.
  • a plurality of substrates are immersed in a processing tank in which a high-temperature phosphoric acid aqueous solution is stored for a certain period of time.
  • a batch type substrate processing apparatus in order to perform a uniform etching process, it is necessary to immerse the substrate in a phosphoric acid aqueous solution stored in a processing tank for a certain period or more. Therefore, the same processing time is required regardless of whether a plurality of substrates are processed at once or when a single substrate is processed.
  • a single wafer type substrate processing apparatus can uniformly process a single substrate in a short time.
  • the etching rate (removal amount per unit time) of the silicon nitride film is highest when the temperature of the phosphoric acid aqueous solution supplied to the substrate is near the boiling point.
  • the temperature of the phosphoric acid aqueous solution is lowered before being supplied to the substrate.
  • the etching rate decreases. For this reason, the time required for etching becomes long and the throughput may be lowered, and an improvement in the etching rate is demanded.
  • the phosphoric acid etching it is required not only to increase the etching rate of the silicon nitride film, but also to increase the selectivity of the silicon nitride film (the removal amount of the silicon nitride film / the removal amount of the silicon oxide film).
  • an object of the present invention is to provide a substrate processing apparatus capable of increasing the nitride film etching rate and at the same time keeping the nitride film selectivity high.
  • the present invention provides a storage tank for storing a phosphoric acid aqueous solution, a substrate holding means for holding the substrate in a horizontal posture in a state in which the substrate is immersed in the phosphoric acid aqueous solution in the storage tank, and the substrate holding means
  • a substrate processing apparatus including a heating unit facing a substrate that is formed, and heating means for heating the substrate by heat radiation or heat transfer from the heating unit.
  • the substrate is immersed in the phosphoric acid aqueous solution in the storage tank.
  • the substrate in the immersion state is given heat from the heat generating part by heat conduction, and at the same time, heat is given by heat radiation (heat radiation).
  • heat radiation heat radiation
  • the phosphoric acid aqueous solution in which the substrate is immersed is maintained at the boiling point by the heat from the heat generating part.
  • the boundary where the substrate surface and the phosphoric acid aqueous solution are in contact with each other is extremely hot locally and the phosphoric acid concentration is kept low as a whole.
  • the phosphoric acid aqueous solution in this state can be applied to the nitride film on the surface of the substrate. Thereby, the etching rate can be greatly increased, and at the same time, the selectivity of the nitride film can be kept high.
  • the substrate can be immersed with a small amount of phosphoric acid aqueous solution. Further, since the substrate is in a horizontal posture, generation of convection in the phosphoric acid aqueous solution can be suppressed, and thereby the temperature and phosphoric acid concentration of the phosphoric acid aqueous solution can be kept uniform.
  • the substrate processing apparatus stores water in the storage tank by controlling water supply means for supplying water to the phosphoric acid aqueous solution stored in the storage tank and supply / stop of water supply from the water supply means. It is preferable to include concentration control means for controlling the concentration of the phosphoric acid aqueous solution.
  • the phosphoric acid aqueous solution is maintained in a boiling state by heating of the heat generating portion with respect to the phosphoric acid aqueous solution.
  • the phosphoric acid concentration of the phosphoric acid aqueous solution gradually increases due to evaporation of water contained in the phosphoric acid aqueous solution.
  • the rise in the boiling point of the phosphoric acid aqueous solution further increases the temperature of the phosphoric acid aqueous solution, which may further increase the phosphoric acid concentration of the phosphoric acid aqueous solution.
  • an increase in the phosphoric acid concentration of the phosphoric acid aqueous solution is suppressed by supplying water to the phosphoric acid aqueous solution maintained in a boiling state. That is, the concentration of the phosphoric acid aqueous solution can be controlled by controlling the supply / stop of water supply to the phosphoric acid aqueous solution. As a result, a phosphoric acid aqueous solution whose concentration is appropriately controlled can be supplied to the substrate, and therefore the selectivity of the nitride film can be maintained even higher.
  • the water supply means may include a porous nozzle having a large number of discharge ports for discharging water droplets. Since water droplets are discharged from each of a large number of discharge ports, water can be supplied almost uniformly to the phosphoric acid aqueous solution stored in the storage tank. As a result, the phosphoric acid concentration of the phosphoric acid aqueous solution can be kept uniform. Thereby, the selectivity of the nitride film can be kept uniform over the entire area of the substrate.
  • the water supply means may include a spray nozzle that injects spray-like water into the reservoir.
  • a spray nozzle that injects spray-like water into the reservoir.
  • finer water droplets are supplied to the phosphoric acid aqueous solution stored in the storage tank.
  • Water and phosphoric acid aqueous solution tend to be relatively difficult to mix due to differences in specific gravity, viscosity, and the like.
  • the smaller the droplet size the easier it is to mix, the water and the phosphoric acid aqueous solution can be smoothly mixed by supplying water in a fine droplet state to the phosphoric acid aqueous solution.
  • the heating means heats the substrate held by the substrate holding means from below.
  • the storage tank may have a bottom surface, and the bottom surface of the storage tank may constitute the heat generating portion. Since the bottom surface of the storage tank is a heat generating part, heat can be applied to the substrate immersed in the phosphoric acid aqueous solution in the storage tank by heat radiation or heat conduction from the heat generating part with a simple configuration.
  • the heating means heats the substrate held by the substrate holding means from above.
  • the heating unit may include an infrared lamp, and the infrared lamp may be disposed to face the surface of the substrate held by the substrate holding unit and irradiate infrared rays toward the surface.
  • the substrate holding means has a substrate support portion that supports a substrate in a non-contact state with respect to the storage tank, and the substrate processing apparatus includes a substrate rotation means that rotates the substrate supported by the substrate support portion. Further, it may be included.
  • the substrate can be rotated (for example, spin dry).
  • FIG. 4 is a schematic diagram for explaining the processing example of FIG. 3.
  • FIG. 4B is a schematic diagram for explaining a process following FIG. 4A. It is a schematic diagram for demonstrating the process following FIG. 4B.
  • FIG. 4D is a schematic diagram for explaining a process following FIG. 4C.
  • FIG. 4D is a schematic diagram for explaining a process following FIG. 4D. It is a schematic diagram for demonstrating the process following FIG. 4E.
  • FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus 1 according to a first embodiment of the present invention.
  • the substrate processing apparatus 1 has a silicon oxide film (oxide film) and a silicon nitride film (on the surface on the device forming region side of a circular semiconductor wafer W (hereinafter simply referred to as “wafer W”) as an example of a substrate (
  • This is a single wafer type apparatus for performing an etching process on the nitride film.
  • This etching process is a process for selectively etching the nitride film from the surface of the wafer W, and an aqueous phosphoric acid solution is used as an etchant.
  • a substrate processing apparatus 1 includes a storage tank (heating means) 4 for storing a phosphoric acid aqueous solution in a processing chamber 2 partitioned by a partition wall (not shown), and a storage tank 4.
  • a spin chuck 3 that rotates while holding the wafer W horizontally while immersed in an aqueous phosphoric acid solution.
  • a heater 28 is embedded in the storage tank 4, and the bottom surface 29 of the storage tank 4 functions as a heat generating unit for heating the wafer W.
  • the substrate processing apparatus 1 includes a phosphoric acid aqueous solution nozzle 5 for discharging a phosphoric acid aqueous solution onto the surface (upper surface) of the wafer W held on the spin chuck 3, and the wafer W held on the spin chuck 3.
  • the spin chuck 3 includes a cylindrical rotating shaft 11 that extends vertically, a disk-shaped spin base 12 that is attached to the upper end of the rotating shaft 11 in a horizontal posture, and a plurality of spin chucks 3 that are arranged on the spin base 12 at regular intervals, for example. (At least three, for example, six) clamping members (substrate support portions) 13 and a spin motor (substrate rotation means) 14 connected to the rotation shaft 11 are provided.
  • Each clamping member 13 is configured by arranging downwardly a clamping pin 34 for clamping the peripheral edge of the wafer W at the tip of an L-shaped support arm 42 in a side view.
  • the clamping pin drive mechanism 43 is coupled to the plurality of clamping pins 34.
  • the clamping pin drive mechanism 43 has a clamping position where the plurality of clamping pins 34 can be brought into contact with the end surface of the wafer W to clamp the wafer W, and an open position radially outward of the wafer W from the clamping position. Can be led to.
  • the wafer W is firmly held by the spin chuck 3 by holding the holding pins 34 in contact with the peripheral end surface of the wafer W.
  • the rotational driving force of the spin motor 14 is input to the rotation shaft 11, so that the wafer W is rotated around the vertical rotation axis A 1 passing through the center of the wafer W. Rotate.
  • the spin chuck 3 can rotate the wafer W at a maximum rotation speed of 2500 rpm.
  • the phosphoric acid aqueous solution nozzle 5 is, for example, a straight nozzle that discharges a phosphoric acid aqueous solution in a continuous flow state, and is fixedly disposed above the spin chuck 3 with its discharge port directed near the rotation center of the wafer W. ing.
  • the phosphoric acid aqueous solution nozzle 5 is connected to a phosphoric acid supply pipe 16 to which a phosphoric acid aqueous solution having a boiling point (for example, about 140 ° C.) from a phosphoric acid aqueous solution supply source is supplied.
  • a phosphate valve 17 for opening and closing the phosphate supply pipe 16 is interposed in the phosphate supply pipe 16.
  • the phosphoric acid aqueous solution is supplied from the phosphoric acid supply pipe 16 to the phosphoric acid aqueous solution nozzle 5, and when the phosphoric acid valve 17 is closed, the phosphoric acid aqueous solution nozzle 5 is supplied from the phosphoric acid supply pipe 16. The supply of the phosphoric acid aqueous solution to is stopped.
  • the bar nozzle 50 is a nozzle that extends linearly and is held in a horizontal position above the spin chuck 3.
  • the bar nozzle 50 extends along the radial direction of the wafer W held by the spin chuck 3 and passes on the rotation axis A1 of the wafer W.
  • the bar nozzle 50 has a cylindrical nozzle pipe 51 whose tip is closed. The tip of the bar nozzle 50 is closed.
  • Each discharge port 52 includes a small hole that opens in the tube wall of the nozzle pipe 51, and each discharge port 52 communicates with the internal space of the nozzle pipe 51.
  • the plurality of discharge ports 52 have substantially the same size and are arranged with substantially equal density.
  • a first water supply pipe 53 to which water from a water supply source is supplied is connected to the proximal end of the nozzle pipe 51.
  • the inside of the nozzle pipe 51 communicates with the inside of the first water supply pipe 53.
  • the first water supply pipe 53 is provided with a first water valve 54 for opening and closing the first water supply pipe 53.
  • first water valve 54 When the first water valve 54 is opened, water is supplied from the first water supply pipe 53 to the bar nozzle 50, and water is discharged downward from each discharge port 52. Since each discharge port is formed from a small hole, each discharge port 52 drops as a droplet. At this time, the discharge flow rate of water from each discharge port 52 is uniform.
  • the water dripped from each discharge port 52 is poured into the storage tank 4 of the spin chuck 3.
  • the water nozzle 30 is, for example, a straight nozzle that discharges DIW for rinsing in a continuous flow state.
  • the water nozzle 30 is fixedly disposed above the spin chuck 3 with its discharge port directed near the rotation center of the wafer W. Yes.
  • a second water supply pipe 31 to which water from a water supply source is supplied is connected to the water nozzle 30.
  • a second water valve 32 for switching supply / stop of water supply from the water nozzle 30 is interposed in the middle of the second water supply pipe 31.
  • the cup 8 is for processing a phosphoric acid aqueous solution and water after being used for processing the wafer W, and is formed in a bottomed cylindrical container shape.
  • the storage tank 4 has, for example, a substantially cylindrical bottomed container shape, and is formed using ceramic or silicon carbide (SiC).
  • the storage tank 4 is disposed in a horizontal posture between the upper surface of the spin base 12 and the lower surface of the wafer W held by the spin chuck 3.
  • the storage tank 4 includes a horizontally flat circular bottom surface (heat generating portion) 29 and an outer peripheral wall 38 that rises vertically upward from the peripheral edge of the bottom surface 29.
  • the bottom surface 29 of the storage tank 4 and the inner peripheral surface of the outer peripheral wall 38 define a shallow groove storage groove 41 for storing a liquid above the bottom surface 29, and the liquid can be stored above the bottom surface 29. It is like that.
  • the groove depth of the storage groove 41 (the thickness of the liquid stored in the storage groove 41) is set to, for example, about 7 mm within a range of 2 mm to 11 mm.
  • a resistance heater 28 is embedded in the bottom surface 29 of the storage tank 4.
  • Power is supplied to the heater 28 through a power supply line (not shown) that passes through the through hole 24 and the like described below.
  • the storage tank 4 is not configured to be rotatable, and therefore a rotating electrical contact is not required for supplying power to the heater 28. Therefore, compared with the case where the storage tank 4 is rotated, the power supply amount to the storage tank 4 is not limited. Thereby, the wafer W can be heated to a desired high temperature.
  • the heater 28 In the ON state of the heater 28, the heater 28 generates heat by supplying power to the heater 28, the entire storage tank 4 enters a heat generation state, and the entire bottom surface 29 generates heat.
  • the amount of heat generated per unit area of the bottom surface 29 when the heater 28 is on is set uniformly over the entire bottom surface 29.
  • the support rod 25 is inserted in the vertical direction (thickness direction of the spin base 12) along the rotation axis A1 through the through hole 24 penetrating the spin base 12 and the rotation shaft 11 in the vertical direction. It is fixed.
  • the support rod 25 is not in contact with the spin base 12 or the rotating shaft 11 in the through hole 24.
  • the lower end (the other end) of the support rod 25 is fixed to a peripheral member below the spin chuck 3, whereby the support rod 25 is held in a posture.
  • the storage tank 4 is not supported by the spin chuck 3, the storage tank 4 is stationary (non-rotating state) without rotating even when the wafer W is rotating.
  • the support rod 25 is a hollow shaft, and a water supply path 61 for flowing water such as DIW (deionized water) is formed therein.
  • the water supply path 61 communicates with a lower discharge port 62 that opens at the bottom surface 29 of the storage tank 4.
  • the lower discharge port 62 faces the center of the lower surface of the wafer W held by the spin chuck 3.
  • a water supply pipe 63 to which water is supplied from a water supply source is connected to the water supply path 61.
  • the water supply pipe 63 is provided with a water valve 64 for opening and closing the water supply pipe 63.
  • the water valve 64 When the water valve 64 is opened, water is supplied from the water supply pipe 63 to the lower discharge port 62 through the water supply path 61. Thereby, water is discharged from the lower discharge port 62.
  • An elevating mechanism 27 for elevating the storage tank 4 is coupled to the support rod 25.
  • the storage tank 4 is lifted and lowered by the lifting mechanism 27 while maintaining a horizontal posture.
  • the elevating mechanism 27 is constituted by, for example, a ball screw or a motor.
  • the storage tank 4 has a lower position where the lower surface is close to the upper surface of the spin base 12 (a separation position where the lower surface is separated from the wafer W; see FIG. 4A and the like), and an upper surface of the storage tank 4 is the wafer W Are moved up and down with respect to an upper position (a proximity position close to the wafer W; see FIG. 4D and the like) opposed to the lower surface of the wafer W with a small interval W1.
  • interval of the storage tank 4 and the wafer W can be changed.
  • annular groove 37 is formed on the peripheral edge of the bottom surface 29 of the storage tank 4 to accommodate the pin 34 of the clamping member 13 when the storage tank 4 is in the upper position described below.
  • the annular groove 37 has an annular shape with the rotation axis A1 as the center so that the pin 34 of the clamping member 13 can be accommodated during rotation of the spin chuck 3 (spin base 12).
  • the groove depth of the annular groove 37 is set to such a depth that the holding pin 34 and the bottom wall of the annular groove 37 do not interfere when the storage tank 4 is in the upper position described below.
  • the groove width of the annular groove 37 is set wider than the outer diameter of the holding pin 34.
  • the annular groove 37 and the outer peripheral wall 38 are provided adjacent to the inside and outside. That is, the outer peripheral surface of the annular groove 37 and the inner peripheral surface of the outer peripheral wall 38 are continuous to form a vertical surface.
  • the wafer W held by the holding member 13 with the surface facing upward is immersed by the liquid stored in the storage groove 41. Is done. That is, the liquid level of the liquid stored in the storage groove 41 is located above the surface of the wafer W, and as a result, the entire surface of the wafer W is covered with the liquid stored in the storage groove 41.
  • FIG. 2 is a block diagram showing an electrical configuration of the substrate processing apparatus 1.
  • the substrate processing apparatus 1 includes a control unit (temperature control means) 40 including a microcomputer.
  • the controller 40 controls on / off of the heater 28 by switching between energization / disconnection of the heater 28.
  • the control unit 40 controls operations of the spin motor 14, the pinching pin drive mechanism 43, the lifting mechanism 27, and the like.
  • the control unit 40 also controls the opening / closing operations of the phosphoric acid valve 17, the first water valve 54, the second water valve 32, and the like.
  • FIG. 3 is a process diagram for explaining a processing example of the phosphoric acid etching process executed by the substrate processing apparatus 1.
  • 4A to 4F are schematic views for explaining this processing example.
  • the controller 40 turns on the heater 28 (driving state).
  • the bottom surface 29 is in a heat generating state.
  • the control unit 40 opens the phosphoric acid valve 17 and discharges a phosphoric acid aqueous solution having a high boiling point close to the boiling point from the phosphoric acid aqueous solution nozzle 5, and the phosphoric acid aqueous solution is stored in the storage groove 41 of the storage tank 4 in the lower position. Accumulate on.
  • the control unit 40 closes the phosphoric acid valve 17.
  • the phosphoric acid aqueous solution is heated by the bottom surface 29 in an exothermic state, and the phosphoric acid aqueous solution is heated to a boiling point (for example, about 140 ° C.) and then maintained in a boiling state.
  • a boiling point for example, about 140 ° C.
  • water contained in the phosphoric acid aqueous solution evaporates, and the phosphoric acid concentration of the phosphoric acid aqueous solution gradually increases.
  • the control unit 40 opens the first water valve 54 and drops water droplets from the discharge ports 52 of the bar nozzle 50.
  • the liquid droplets dropped from each discharge port 52 are supplied to the phosphoric acid aqueous solution in the storage tank 4. Since water droplets are discharged from each of the large number of discharge ports 52, water is supplied almost uniformly to the phosphoric acid aqueous solution stored in the storage tank 4.
  • By supplying water to the phosphoric acid aqueous solution in the boiling state an increase in the phosphoric acid concentration of the phosphoric acid aqueous solution in the storage tank 4 is suppressed.
  • the supply of water to the phosphoric acid aqueous solution is performed prior to the loading of the wafer W.
  • the controller 40 adjusts the amount of water supplied to the phosphoric acid aqueous solution in the storage tank 4 by opening and closing the first water valve 54 and switching supply / stop of supply from the bar nozzle 50. Since the water is supplied for adjusting the phosphoric acid concentration of the phosphoric acid aqueous solution, the flow rate of the phosphoric acid aqueous solution supplied from the bar nozzle 50 is sufficient. By supplying such water, the phosphoric acid concentration and temperature of the phosphoric acid aqueous solution in the storage tank 4 are controlled to be constant at a predetermined phosphoric acid concentration (81% as an example) and temperature (about 140 ° C. as an example), respectively.
  • the phosphoric acid concentration and temperature of the phosphoric acid aqueous solution in the storage tank 4 are controlled to be constant at a predetermined phosphoric acid concentration (81% as an example) and temperature (about 140 ° C. as an example), respectively.
  • a transfer robot (not shown) is controlled in a state where the temperature of the phosphoric acid aqueous solution and the phosphoric acid concentration in the storage tank 4 are controlled to the intended temperature and concentration, respectively, and an unprocessed wafer W is placed in the processing chamber 2. Is brought in. A silicon nitride film and a silicon oxide film are formed on the surface of the unprocessed wafer W.
  • the loaded wafer W is arranged at a predetermined delivery position facing the bottom surface 29 of the storage tank 4, and the control unit 40 drives the clamping pin drive mechanism 43 to move the plurality of clamping pins 34 from the open position to the clamping position. Lead.
  • the loaded wafer W is held by the spin chuck 3 with its surface facing upward. In the state where the wafer W is at the delivery position, the distance between the lower surface and the bottom surface 29 of the wafer W is, for example, about 50 mm.
  • the control unit 40 controls the elevating mechanism 27 to raise the storage tank 4 to the upper position.
  • the wafer W is immersed in the phosphoric acid aqueous solution in the storage tank 4.
  • the liquid level of the phosphoric acid aqueous solution in the storage tank 4 is located above the surface of the wafer W, and as a result, the entire surface of the wafer W is covered with the phosphoric acid aqueous solution.
  • a phosphoric acid etching process is performed on the surface of the wafer W (step S1). The phosphoric acid etching process is performed until a predetermined etching time elapses.
  • the interval W1 between the lower surface of the wafer W and the bottom surface 29 of the storage tank 4 is set to about 3 mm, for example.
  • the liquid level of the phosphoric acid aqueous solution is located approximately 3 mm above the wafer W.
  • the thickness of the wafer W is, for example, 0.775 mm.
  • the interval W1 can be set as appropriate within a range of 0.3 to 3 mm.
  • the wafer W held by the spin chuck 3 is heated from the bottom surface 29 of the storage tank 4 by thermal radiation. Since the bottom surface 29 and the lower surface of the wafer W are parallel with the storage tank 4 in the upper position, the amount of heat per unit area given to the wafer W from the storage tank 4 is substantially uniform over the entire area of the wafer W. It is.
  • water is appropriately supplied to the phosphoric acid aqueous solution in the storage tank 4 during the phosphoric acid etching step.
  • the controller 40 opens the first water valve 54 and drops water droplets from the discharge ports 52 of the bar nozzle 50. Since water droplets are discharged from each of the large number of discharge ports 52, water is supplied almost uniformly to the phosphoric acid aqueous solution stored in the storage tank 4. Thereby, the phosphoric acid concentration and temperature of the phosphoric acid aqueous solution in the storage tank 4 are controlled to a predetermined phosphoric acid concentration (81% as an example) and temperature (about 140 ° C. as an example), respectively.
  • the control unit 40 controls the spin motor 14 to rotate the wafer W at a predetermined low speed (for example, in the range of 10 to 300 rpm). As the wafer W rotates, the phosphoric acid aqueous solution stored in the storage groove 41 is agitated. Thereby, the phosphoric acid concentration and temperature of the phosphoric acid aqueous solution are uniformly distributed.
  • FIG. 5 is a diagram showing heating of the wafer W by the bottom surface 29 of the storage tank 4.
  • the bottom surface 29 of the storage tank 4 and the lower surface of the wafer W are almost opposed to each other. Further, the interval W1 between the bottom surface 29 of the storage tank 4 and the lower surface of the wafer W is set to, for example, about 3 mm within a range of 0.3 to 3 mm, for example. Therefore, the wafer W is given heat from the bottom surface 29 of the storage tank 4 by heat conduction and heat by radiation. Thereby, it is considered that the temperature of the wafer W is raised to about 160 ° C.
  • FIG. 6 is a graph showing the relationship between the phosphoric acid concentration (H 3 PO 4 concentration) in the phosphoric acid aqueous solution and the boiling point (boiling point) of the phosphoric acid aqueous solution.
  • the curve in FIG. 6 shows a saturation concentration curve, and the region below the curve is a region where a phosphoric acid aqueous solution can exist (H 3 PO 4 existence region).
  • an aqueous phosphoric acid solution having a concentration of 81% has a boiling point of about 140 ° C.
  • an aqueous phosphoric acid solution having a concentration of 81% does not rise to 140 ° C. or higher in the liquid phase.
  • the maximum concentration of the phosphoric acid aqueous solution having a temperature of 160 ° C. is about 86%. Therefore, in a phosphoric acid aqueous solution having a temperature of 160 ° C., the concentration does not decrease below about 86% in a normal state.
  • FIG. 7 is a graph showing the relationship between the phosphoric acid concentration in the phosphoric acid aqueous solution, the temperature of the phosphoric acid aqueous solution, and the etching rate of the silicon nitride film.
  • the solid line indicates the etching rate when the silicon nitride film is etched using an aqueous phosphoric acid solution having temperatures of 150 ° C., 160 ° C., and 170 ° C.
  • the boiling point of phosphoric acid aqueous solution is shown with the broken line.
  • the etching rate is highest when the temperature of the phosphoric acid aqueous solution is 170 ° C., and the etching rate when the temperature of the phosphoric acid aqueous solution is 160 ° C. is second. high. Therefore, if the phosphoric acid concentration is constant, the higher the temperature of the phosphoric acid aqueous solution, the higher the etching rate.
  • the etching rate decreases as the phosphoric acid concentration increases.
  • the temperature of the phosphoric acid aqueous solution is 160 ° C and 170 ° C. Therefore, if the temperature of the phosphoric acid aqueous solution is constant, the lower the phosphoric acid concentration, the higher the etching rate.
  • the temperature of the phosphoric acid aqueous solution is 140 ° C.
  • the state of the phosphoric acid aqueous solution in the storage tank 4 in the phosphoric acid etching process will be described with reference to FIGS.
  • a phosphoric acid aqueous solution whose concentration is adjusted to 81% is stored.
  • the boiling point of this phosphoric acid aqueous solution is about 140 ° C.
  • the phosphoric acid aqueous solution stored in the storage tank 4 is heated by the bottom surface 29 of the storage tank 4 and maintains the boiling point of about 140 ° C.
  • the wafer W is heated to about 160 ° C. by heating from the bottom surface 29 of the storage tank 4.
  • a temperature gradient is formed in the phosphoric acid aqueous solution at the boundary with the surface of the wafer W, which becomes higher as the surface of the wafer W is approached.
  • a high temperature state of about 160 ° C. is realized at the boundary where the surface of the wafer W and the phosphoric acid aqueous solution are in contact with each other.
  • the etching rate of the silicon nitride film can be greatly increased, and at the same time, the selectivity of the silicon nitride film can be kept high.
  • control unit 40 controls the lifting mechanism 27 to lower the storage tank 4 as shown in FIG. 4F. Lower to position. Thereby, the heating of the wafer W by the bottom surface 29 of the storage tank 4 is completed.
  • control unit 40 controls the spin motor 14 to increase the rotation speed of the wafer W to a predetermined rinse processing speed (in the range of 300 to 1500 rpm, for example, 1000 rpm), and opens the second water valve 32, DIW is supplied from the discharge port of the water nozzle 30 toward the vicinity of the rotation center of the wafer W (step S2: rinsing step).
  • the DIW supplied to the surface of the wafer W receives centrifugal force due to the rotation of the wafer W and flows on the surface of the wafer W toward the periphery of the wafer W. Thereby, the phosphoric acid aqueous solution adhering to the surface of the wafer W is washed away by DIW.
  • storage tank cleaning is performed to clean the inner wall surface of the storage tank 4 (the bottom surface 29, the wall surface of the annular groove 37, and the inner peripheral surface of the outer peripheral wall 38) with water.
  • the control unit 40 opens the water valve 64 and discharges water from the lower discharge port 62.
  • the water discharged from the lower discharge port 62 is stored in the storage groove 41 of the storage tank 4.
  • the discharge of water from the lower discharge port 62 is continued even after the storage groove 41 overflows. Thereby, the phosphoric acid aqueous solution adhering to the inner wall surface of the storage tank 4 is washed away with water.
  • the second water valve 32 is closed and the supply of DIW to the surface of the wafer W is stopped.
  • the water supply valve 64 is closed together with the DIW supply stop, and the supply of water to the storage tank 41 is stopped.
  • control unit 40 drives the spin motor 14 to increase the rotation speed of the wafer W to a predetermined high rotation speed (for example, 1500 to 2500 rpm), and shakes off the DIW adhering to the wafer W to be dried.
  • Spin drying is performed (step S3).
  • the DIW adhering to the wafer W is removed by spin drying in step S3.
  • the control unit 40 drives the spin motor 14 to stop the rotation of the spin chuck 3.
  • the control unit 40 drives the holding pin driving mechanism 43 to guide the plurality of holding pins 34 from the holding position to the open position, and the processed wafer W is delivered to the transfer robot.
  • the wafer W is unloaded from the processing chamber 2 by the transfer robot.
  • the wafer W is heated to about 160 ° C. by heating the wafer W by the bottom surface 29 of the storage tank 4.
  • a temperature gradient is formed in the phosphoric acid aqueous solution at the boundary with the surface of the wafer W, which becomes higher as the surface of the wafer W is approached.
  • the phosphoric acid aqueous solution at the boundary with the surface of the wafer W is in a state where the phosphoric acid concentration is maintained at a very high temperature and a low phosphoric acid concentration (the temperature is about 160 ° C. and the concentration is about 81%, A state in which the acid concentration is kept low).
  • the etching rate of the silicon nitride film can be greatly increased, and at the same time, the selectivity of the silicon nitride film can be kept high.
  • FIG. 8 is a diagram schematically showing the configuration of the substrate processing apparatus 101 according to the second embodiment of the present invention.
  • parts corresponding to those shown in the first embodiment are denoted by the same reference numerals as those in FIGS. 1 to 7, and description thereof is omitted.
  • the substrate processing apparatus 101 is different from the substrate processing apparatus 1 according to the first embodiment in that, as a water supply unit for supplying water, instead of the bar nozzle 50, water droplets are ejected in a spray form (spraying).
  • the spray nozzle 102 is employed.
  • a third water supply pipe 103 to which water from a water supply source is supplied is connected to the spray nozzle 102.
  • a third water valve 104 for opening and closing the third water supply pipe 103 is interposed in the third water supply pipe 103. When the third water valve 104 is opened, water is supplied from the third water supply pipe 103 to the spray nozzle 102, and water droplets are ejected (sprayed) from the spray nozzle 102 downward.
  • the water droplets discharged from the spray nozzle 102 are finer (smaller) than the water droplets discharged from the bar nozzle of the first embodiment described above.
  • water droplets are ejected in a spray form from the spray nozzle 102, so that water can be supplied almost uniformly to the phosphoric acid aqueous solution stored in the storage tank 4, As a result, the phosphoric acid concentration of the phosphoric acid aqueous solution can be kept uniform.
  • finer water droplets are supplied from the spray nozzle 102 to the phosphoric acid aqueous solution.
  • Water and phosphoric acid aqueous solution tend to be relatively difficult to mix due to differences in specific gravity, viscosity, and the like.
  • the smaller the droplet size the easier it is to mix, the water and the phosphoric acid aqueous solution can be smoothly mixed by supplying water in a fine droplet state to the phosphoric acid aqueous solution.
  • FIG. 8 shows a case where only one spray nozzle 102 is provided, water can also be discharged from a plurality of spray nozzles at different positions in the left-right direction.
  • FIG. 9 is a diagram schematically showing the configuration of the substrate processing apparatus 201 according to the third embodiment of the present invention.
  • parts corresponding to those shown in the first embodiment are denoted by the same reference numerals as those in FIGS. 1 to 7, and description thereof is omitted.
  • the difference between the substrate processing apparatus 201 and the substrate processing apparatus 1 according to the first embodiment is that a non-heating type storage tank 204 is adopted as the storage tank.
  • the substrate processing apparatus 1 is also different from the substrate processing apparatus 1 in that a heater head 203 for heating the surface of the wafer W is provided above the spin chuck 3.
  • the storage tank 204 is formed using, for example, ceramic, SiC, or heat resistant resin.
  • the configuration of the storage tank 204 is the same as that of the storage tank 4 shown in FIG. 1 except that the heater 28 (see FIG. 1) is not embedded and does not function as a heating means. That is, the storage tank 204 is arranged in a horizontal posture and is moved up and down while maintaining the horizontal posture.
  • the elevating mechanism (see FIG. 1) 27 By driving the elevating mechanism (see FIG. 1) 27, the storage tank 204 has a lower position where the lower surface thereof is close to the upper surface of the spin base 12, and the bottom surface 29 of the storage tank 204 has a minute interval W 1 on the lower surface of the wafer W. It is moved up and down between the upper positions arranged opposite to each other. Thereby, the interval between the storage tank 204 and the wafer W can be changed.
  • a storage groove 41 for storing liquid is defined above the bottom surface 29 by the bottom surface 29 of the storage tank 204 and the inner peripheral surface of the outer peripheral wall 38.
  • the wafer W facing upward is immersed by the liquid stored in the storage groove 41. That is, the entire surface of the wafer W is covered with the liquid stored in the storage groove 41. Even when the wafer W is rotating, the storage groove 41 is not rotated but is stationary (non-rotating state).
  • the heater head 203 has a disk shape having a diameter equivalent to that of the wafer W, and is formed using, for example, ceramic.
  • the heater head 203 is held in a horizontal posture from above by a holder 205.
  • a resistance heater 208 is embedded in the heater head 203.
  • the heater head 203 has a lower surface (heat generating portion) 209 made of a horizontal flat surface.
  • the lower surface 209 of the heater head 203 is disposed to face the entire surface of the wafer W held by the spin chuck 3.
  • the heater 208 generates heat by supplying power to the heater 208, and the entire lower surface 209 generates heat.
  • the heat generation amount per unit area of the lower surface 209 when the heater 28 is on is set to be uniform.
  • the heater 205 is coupled to the holder 205 for raising and lowering the heater head 203.
  • the heater lifting mechanism 206 is electrically connected to the control unit 40 (see FIG. 2).
  • the phosphoric acid aqueous solution is stored in the storage groove 41 of the storage tank 204, as in the first embodiment (see FIG. 4A). Thereafter, an unprocessed wafer W is loaded into the processing chamber 2, and the wafer W is held on the spin chuck 3 (the holding member 13) with the surface thereof facing upward.
  • the control unit 40 controls the elevating mechanism 27 (see FIG. 1) to raise the storage tank 204 to the upper position.
  • the wafer W is immersed in the phosphoric acid aqueous solution in the storage tank 204.
  • the liquid level of the phosphoric acid aqueous solution in the storage tank 204 is located above the surface of the wafer W, and as a result, the entire surface of the wafer W is covered with the phosphoric acid aqueous solution.
  • the surface of the wafer W is subjected to phosphoric acid etching (corresponding to step S1 in FIG. 3).
  • control unit 40 controls the heater lifting mechanism 206 to lower the heater head 203 to a close position where the lower surface 209 of the heater head 203 is close to the surface (upper surface) of the wafer W.
  • the distance between the surface (upper surface) of the wafer W and the lower surface 209 of the heater head 203 is set to about 2 mm, for example.
  • the wafer W held by the spin chuck 3 is heated from the lower surface 209 of the heater head 203 by heat radiation. Since the lower surface 209 of the heater head 203 and the surface of the wafer W are parallel to each other, the amount of heat per unit area given from the heater head 203 to the wafer W is substantially uniform over the entire area of the wafer W. Due to the heating by the heater head 203, the temperature of the wafer W is raised to a temperature slightly higher than the liquid temperature of the phosphoric acid aqueous solution (expected to be about 160 ° C.) and maintained at that temperature.
  • the wafer W immersed in the phosphoric acid aqueous solution in the storage tank 204 is heated using the heater head 203 disposed close to the wafer W. Therefore, the wafer W can be heated satisfactorily without adopting a complicated configuration such as incorporating a heater in the storage tank 204.
  • FIG. 10 is a diagram schematically showing the configuration of a substrate processing apparatus 301 according to the fourth embodiment of the present invention.
  • parts corresponding to the parts shown in the third embodiment are denoted by the same reference numerals as in FIGS. 1 to 7 and FIG. 9, and description thereof is omitted.
  • the substrate processing apparatus 301 is different from the substrate processing apparatus 201 according to the third embodiment in that an infrared heater (heating) is used instead of the heater head 203 as a heater for heating the surface of the wafer W. Means) 303 is provided.
  • the infrared heater 303 has a circular shape in a plan view having a smaller diameter than the wafer W (for example, about 1/5 to 1/10 of the diameter of the wafer W), and the surface of the wafer W held by the spin chuck 3 is Oppositely arranged above.
  • the infrared heater 303 incorporates an infrared lamp 304 having an infrared irradiation surface (heat generating portion) 304A on the lower surface.
  • the infrared irradiation surface 304 ⁇ / b> A faces the surface of the wafer W over substantially the entire area, and the infrared irradiation surface 304 ⁇ / b> A faces the surface of the wafer W.
  • the infrared lamp 38 is configured by accommodating a filament in a quartz pipe. As the infrared lamp 38, a short, medium and long wavelength infrared heater represented by a halogen lamp and a carbon heater can be adopted.
  • the holder 205 is coupled with a heater swing mechanism 306 for swinging the infrared heater 303 about a predetermined vertical swing axis provided outside the surface of the wafer W.
  • the infrared heater 303 has an arc-shaped trajectory that intersects the rotation direction of the wafer W between the rotation center (on the rotation axis A ⁇ b> 1) and the peripheral edge of the surface of the wafer W. It is provided to be movable so as to draw.
  • the heater elevating mechanism 206 is controlled, and the infrared heater 303 is lowered to a close position where the infrared irradiation surface 304A is close to the surface (upper surface) of the wafer W. It is done.
  • the distance between the surface (upper surface) of the wafer W and the infrared irradiation surface 304A of the infrared heater 303 is set to about 10 mm, for example.
  • the infrared irradiation surface 304 ⁇ / b> A of the infrared heater 303 in the close position does not come into contact with the phosphoric acid aqueous solution in the storage tank 204.
  • the wafer W held by the spin chuck 3 is heated by thermal radiation from the infrared irradiation surface 304A of the infrared heater 303. Due to the heating by the infrared heater 303, the temperature of the wafer W is raised to a slightly higher temperature than the liquid temperature of the phosphoric acid aqueous solution (expected to be about 160 ° C.) and maintained at this temperature. In this state, a temperature gradient is formed in the phosphoric acid aqueous solution at the boundary with the surface of the wafer W, which becomes higher as the surface of the wafer W is approached.
  • the heater elevating mechanism 206 is controlled so that the infrared heater 303 is largely retracted upward from the proximity position, whereby the heating of the wafer W by the infrared heater 303 is stopped.
  • the infrared heater 303 When the infrared heater 303 irradiates infrared rays, the infrared heater 303 is scanned between the rotation center of the wafer W and the periphery of the wafer W, or the infrared heater 303 is moved to the rotation center of the wafer W. It is placed stationary above the position excluding. Since the wafer W rotates about the rotation axis A ⁇ b> 1, almost the entire area of the wafer W can be heated by irradiation with infrared rays from the infrared heater 303.
  • the wafer W immersed in the phosphoric acid aqueous solution in the storage tank 204 is heated using the infrared heater 303 disposed close to the wafer W. Therefore, the wafer W can be heated satisfactorily without adopting a complicated configuration such as incorporating a heater in the storage tank 204.
  • the infrared heater 303 capable of giving a large amount of heat is provided as a heating means, the wafer W can be heated while adopting a simple configuration as the heating means.
  • the diameter of the infrared heater 303 can be formed to the same diameter as the wafer W.
  • the infrared heater 303 is provided so that the lower surface of the infrared heater 303 faces the entire surface of the wafer W.
  • FIG. 11 is a diagram schematically showing a configuration of a substrate processing apparatus 401 according to the fifth embodiment of the present invention.
  • parts corresponding to those shown in the first embodiment are denoted by the same reference numerals as those in FIGS. 1 to 7, and description thereof is omitted.
  • the substrate processing apparatus 401 includes a substrate holding table 402 as substrate holding means for holding the wafer W.
  • the substrate holder 402 is used in place of the spin chuck 3 of the first embodiment.
  • the substrate holder 402 includes a storage tank 404 (heating means) for storing a phosphoric acid aqueous solution.
  • the storage tank 404 has, for example, a substantially cylindrical bottomed container shape, and is formed using ceramic or silicon carbide (SiC).
  • the storage tank 404 includes a bottom surface portion 409A having a horizontally flat circular bottom surface 409, and an outer peripheral wall 408 that rises vertically upward from the peripheral edge of the bottom surface 409.
  • a storage groove 405 for storing liquid is defined above the bottom surface 29 by the bottom surface 409 of the storage tank 404 and the inner peripheral surface of the outer peripheral wall 408, so that the liquid can be stored above the bottom surface 409.
  • the groove depth of the storage groove 405 (the thickness of the liquid stored in the storage groove 41) is set to, for example, about 7 mm within the range of 2 mm to 11 mm.
  • a resistance heater 406 is embedded in the bottom surface portion 409 ⁇ / b> A of the storage tank 404.
  • the heater 406 In the ON state of the heater 406, the heater 406 generates heat by supplying power to the heater 406, and the entire storage tank 404 is heated. As a result, the entire bottom surface 409 generates heat. In the entire area of the bottom surface 409, the heat generation amount per unit area of the bottom surface 409 when the heater 406 is on is set to be uniform.
  • a plurality of (for example, three) lift pins 403 that move the wafer W up and down relative to the storage tank 404 are provided in association with the storage tank 404.
  • the plurality of lift pins 403 are inserted through a through hole 412 formed vertically through the bottom surface portion 409A of the storage tank 404, and are provided so as to be movable up and down with respect to the bottom surface 409 of the storage tank 404.
  • Each lift pin 403 is supported by a common support member 410.
  • a lift pin elevating mechanism 411 including a cylinder is coupled to the support member 410.
  • the lift pin lifting mechanism 411 includes a plurality of lift pins 403 between a position where the tips of the plurality of lift pins 403 protrude above the substrate holding table 402 and a position where the tips of the plurality of lift pins 403 retract below the substrate holding table 402.
  • the book lift pins 403 are moved up and down integrally.
  • the lift pin lifting mechanism 411 is controlled so that the tips of the plurality of lift pins 403 protrude above the substrate holding table 402. Then, an unprocessed wafer W is loaded, and this wafer W is placed on the tips of a plurality of lift pins 403. At this time, the lift pin raising / lowering mechanism 411 is controlled, the plurality of lift pins 403 are lowered, and the wafer W is transferred from the plurality of lift pins 403 to the substrate holding table 402. As a result, the wafer W is placed on the bottom surface 409 of the storage tank 404 with the surface thereof facing upward. In this state, the lower surface of the wafer W is in contact with the bottom surface 409 of the storage tank 404. Further, in this state, each through hole 412 is closed by the wafer W.
  • the phosphoric acid aqueous solution is stored in the storage groove 405 of the storage tank 404. Since the through hole 412 is blocked by the wafer W, the phosphoric acid aqueous solution does not leak from the storage groove 405. Then, the wafer W is immersed in the phosphoric acid aqueous solution in the storage tank 404. At this time, the liquid level of the phosphoric acid aqueous solution in the storage tank 404 is located above the surface of the wafer W, and as a result, the entire surface of the wafer W is covered with the phosphoric acid aqueous solution. By immersing the wafer W in the phosphoric acid aqueous solution, the surface of the wafer W is subjected to phosphoric acid etching (corresponding to step S1 in FIG. 3).
  • the wafer W held on the substrate holding table 402 is heated by heat conduction from the storage tank 404. Due to heating by the storage tank 404, the temperature of the wafer W is raised to about 200 ° C. and maintained. In this state, a temperature gradient is formed in the phosphoric acid aqueous solution at the boundary with the surface of the wafer W, which becomes higher as the surface of the wafer W is approached.
  • the temperature of the wafer W is raised to about 200 ° C. by heating the wafer W by heat conduction in the bottom surface 409 of the storage tank 404.
  • a temperature gradient is formed in the phosphoric acid aqueous solution at the boundary with the surface of the wafer W, which becomes higher as the surface of the wafer W is approached.
  • the etching rate of the silicon nitride film can be greatly increased, and at the same time, the selectivity of the silicon nitride film can be kept high.
  • a lift pin 403A having a seal portion 420 for sealing the through hole 412 may be employed instead of each lift pin 403 as indicated by a broken line in FIG.
  • the seal portion 420 is provided at the tip (upper end) of the lift pin 403A and has a truncated cone shape whose diameter increases toward the upper side.
  • the opening end of the through hole 412 has a tapered surface 421 formed of a conical surface whose diameter increases toward the upper side.
  • the seal part 420 of the lift pin 403A is accommodated in the opening end of the through hole 412 in a state where the lift pin 403A is in the retreat position where it is retracted below the wafer W. In this state, the outer peripheral surface of the seal portion 420 contacts the tapered surface 421, and the seal portion 420 seals (closes) the through hole 412. Since the through hole 412 is sealed by the seal portion 420 of the lift pin 403A, leakage of the phosphoric acid aqueous solution from the storage groove 405 can be prevented more reliably.
  • the second embodiment and the fifth embodiment can be combined. That is, in the second embodiment, instead of the bar nozzle 50 (see FIG. 1), a spray nozzle 102 that discharges (sprays) water droplets in a spray form may be employed.
  • FIG. 8 shows a case where only one spray nozzle 102 is provided, but water can also be discharged from a plurality of spray nozzles at different positions in the left-right direction. .
  • DIW has been described as an example of water supplied to the phosphoric acid aqueous solution in the storage tank 4, 404, but carbonated water is used as the water supplied to the phosphoric acid aqueous solution.
  • Electrolytic ion water, ozone water, reduced water (hydrogen water), magnetic water, etc. may be employed.
  • the case where the storage tanks 4, 404 are provided with the heater function has been described.
  • the storage tanks 4, 404 and the heaters may be separated.
  • a configuration in which the heater is heated from below the storage tanks 4, 404 may be used.
  • the heater head 203 is formed to have a diameter sufficiently smaller than the diameter of the wafer W, and the heater head 203 is placed on the surface of the wafer W while the heater head 203 in the on state is opposed to the surface of the wafer W. You may make it move along a surface.
  • the infrared heater 303 is formed to have a diameter sufficiently smaller than the diameter of the wafer W, and the infrared heater 303 is placed on the surface of the wafer W while the infrared heater 303 in the on state is opposed to the surface of the wafer W. You may make it move along a surface.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
PCT/JP2013/072438 2012-11-05 2013-08-22 基板処理装置 WO2014069079A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-243596 2012-11-05
JP2012243596A JP6061378B2 (ja) 2012-11-05 2012-11-05 基板処理装置

Publications (1)

Publication Number Publication Date
WO2014069079A1 true WO2014069079A1 (ja) 2014-05-08

Family

ID=50627001

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/072438 WO2014069079A1 (ja) 2012-11-05 2013-08-22 基板処理装置

Country Status (3)

Country Link
JP (1) JP6061378B2 (enrdf_load_stackoverflow)
TW (1) TWI539514B (enrdf_load_stackoverflow)
WO (1) WO2014069079A1 (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017011052A (ja) * 2015-06-19 2017-01-12 東京エレクトロン株式会社 基板処理装置および基板処理方法
EP3416687A4 (en) * 2016-02-17 2019-10-23 Seattle Genetics, Inc. BCMA ANTIBODIES AND USE THEREOF FOR THE TREATMENT OF CANCER AND IMMUNOLOGICAL ILLNESSES
CN111312619A (zh) * 2018-12-12 2020-06-19 东京毅力科创株式会社 基板处理装置和处理液浓缩方法
CN112640058A (zh) * 2018-09-06 2021-04-09 株式会社荏原制作所 基板处理装置
CN114420596A (zh) * 2021-12-30 2022-04-29 上海至纯洁净系统科技股份有限公司 一种用于氮化硅选择性蚀刻的清洗蚀刻系统
CN114446815A (zh) * 2020-10-30 2022-05-06 辛耘企业股份有限公司 晶圆蚀刻装置
US11784065B2 (en) * 2015-04-27 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method for etching etch layer
CN120127036A (zh) * 2025-05-14 2025-06-10 苏州智程半导体科技股份有限公司 一种晶圆加热刻蚀设备
CN114420596B (zh) * 2021-12-30 2025-09-09 上海至纯洁净系统科技股份有限公司 一种用于氮化硅选择性蚀刻的清洗蚀刻系统

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101681183B1 (ko) * 2014-07-11 2016-12-02 세메스 주식회사 기판 처리 장치
US10490426B2 (en) 2014-08-26 2019-11-26 Lam Research Ag Method and apparatus for processing wafer-shaped articles
JP6653608B2 (ja) 2016-03-29 2020-02-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6850650B2 (ja) * 2017-03-27 2021-03-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US12020954B2 (en) 2018-09-06 2024-06-25 Ebara Corporation Substrate processing apparatus
JP7130510B2 (ja) * 2018-09-21 2022-09-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN114446861A (zh) * 2020-10-30 2022-05-06 辛耘企业股份有限公司 晶圆蚀刻机
CN114188245B (zh) * 2021-11-30 2025-04-08 北京北方华创微电子装备有限公司 晶圆清洗设备和晶圆清洗方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07161674A (ja) * 1993-12-08 1995-06-23 Mitsubishi Electric Corp 半導体ウエハの処理装置およびその処理方法
JPH08236497A (ja) * 1995-03-01 1996-09-13 Mitsubishi Electric Corp 半導体ウエハの洗浄・乾燥方法およびその装置
JPH09162153A (ja) * 1995-12-13 1997-06-20 Sony Corp 基板表面の液体による処理方法及び基板の液体処理用装置
JP2000031113A (ja) * 1998-06-23 2000-01-28 Samsung Electron Co Ltd 半導体素子製造用湿式エッチング装置及びこれを用いた半導体素子の湿式エッチング方法
JP2005079212A (ja) * 2003-08-29 2005-03-24 Trecenti Technologies Inc 半導体製造装置、及び半導体装置の製造方法
JP2008066400A (ja) * 2006-09-05 2008-03-21 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2008235333A (ja) * 2007-03-16 2008-10-02 Toshiba Corp 半導体製造装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0342828A (ja) * 1989-07-11 1991-02-25 Mitsubishi Electric Corp 半導体ウエハの処理方法および装置
JPH09199469A (ja) * 1996-01-23 1997-07-31 Sony Corp 薬液処理方法及び薬液処理装置
JP3395616B2 (ja) * 1997-11-20 2003-04-14 株式会社デンソー 半導体ウエハのエッチング加工方法及びその装置
JP2002280339A (ja) * 2001-03-21 2002-09-27 Dainippon Screen Mfg Co Ltd 基板処理方法及びその装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07161674A (ja) * 1993-12-08 1995-06-23 Mitsubishi Electric Corp 半導体ウエハの処理装置およびその処理方法
JPH08236497A (ja) * 1995-03-01 1996-09-13 Mitsubishi Electric Corp 半導体ウエハの洗浄・乾燥方法およびその装置
JPH09162153A (ja) * 1995-12-13 1997-06-20 Sony Corp 基板表面の液体による処理方法及び基板の液体処理用装置
JP2000031113A (ja) * 1998-06-23 2000-01-28 Samsung Electron Co Ltd 半導体素子製造用湿式エッチング装置及びこれを用いた半導体素子の湿式エッチング方法
JP2005079212A (ja) * 2003-08-29 2005-03-24 Trecenti Technologies Inc 半導体製造装置、及び半導体装置の製造方法
JP2008066400A (ja) * 2006-09-05 2008-03-21 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2008235333A (ja) * 2007-03-16 2008-10-02 Toshiba Corp 半導体製造装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11784065B2 (en) * 2015-04-27 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method for etching etch layer
US12362203B2 (en) 2015-04-27 2025-07-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method for etching etch layer
JP2017011052A (ja) * 2015-06-19 2017-01-12 東京エレクトロン株式会社 基板処理装置および基板処理方法
EP3416687A4 (en) * 2016-02-17 2019-10-23 Seattle Genetics, Inc. BCMA ANTIBODIES AND USE THEREOF FOR THE TREATMENT OF CANCER AND IMMUNOLOGICAL ILLNESSES
US11078291B2 (en) 2016-02-17 2021-08-03 Seagen Inc. BCMA antibodies and use of same to treat cancer and immunological disorders
US11767365B2 (en) 2016-02-17 2023-09-26 Seagen Inc. BCMA antibodies and use of same to treat cancer and immunological disorders
CN112640058A (zh) * 2018-09-06 2021-04-09 株式会社荏原制作所 基板处理装置
CN111312619A (zh) * 2018-12-12 2020-06-19 东京毅力科创株式会社 基板处理装置和处理液浓缩方法
CN114446815A (zh) * 2020-10-30 2022-05-06 辛耘企业股份有限公司 晶圆蚀刻装置
CN114420596A (zh) * 2021-12-30 2022-04-29 上海至纯洁净系统科技股份有限公司 一种用于氮化硅选择性蚀刻的清洗蚀刻系统
CN114420596B (zh) * 2021-12-30 2025-09-09 上海至纯洁净系统科技股份有限公司 一种用于氮化硅选择性蚀刻的清洗蚀刻系统
CN120127036A (zh) * 2025-05-14 2025-06-10 苏州智程半导体科技股份有限公司 一种晶圆加热刻蚀设备

Also Published As

Publication number Publication date
JP2014093449A (ja) 2014-05-19
JP6061378B2 (ja) 2017-01-18
TWI539514B (zh) 2016-06-21
TW201419396A (zh) 2014-05-16

Similar Documents

Publication Publication Date Title
JP6061378B2 (ja) 基板処理装置
JP5894897B2 (ja) 基板処理方法および基板処理装置
CN107403742B (zh) 基板处理装置及基板处理方法
US9786522B2 (en) Substrate treatment method and substrate treatment apparatus
JP5975563B2 (ja) 基板処理装置および基板処理方法
CN108155133B (zh) 基板处理装置
JP6728009B2 (ja) 基板処理方法および基板処理装置
TWI670121B (zh) 基板處理裝置及基板處理方法
JP5139844B2 (ja) 基板処理方法および基板処理装置
WO2013140955A1 (ja) 基板処理装置およびヒータ洗浄方法
CN107924832B (zh) 基板处理方法及基板处理装置
KR102088539B1 (ko) 기판 처리 방법 및 기판 처리 장치
JP2017168699A (ja) 基板処理装置および基板処理方法
JP6233564B2 (ja) 基板処理装置および基板処理方法
US20190096705A1 (en) Substrate treatment method and substrate treatment apparatus
JP6593591B2 (ja) 基板処理方法
JP6028892B2 (ja) 基板処理装置
JP2014038979A (ja) 基板処理装置、および基板処理方法
JP5801228B2 (ja) 基板処理装置
JP6008384B2 (ja) 基板処理装置
JP5999625B2 (ja) 基板処理方法
JP6191954B2 (ja) 基板処理方法および基板処理装置
JP2013182958A (ja) 基板処理方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13850239

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13850239

Country of ref document: EP

Kind code of ref document: A1