WO2014068936A1 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- WO2014068936A1 WO2014068936A1 PCT/JP2013/006341 JP2013006341W WO2014068936A1 WO 2014068936 A1 WO2014068936 A1 WO 2014068936A1 JP 2013006341 W JP2013006341 W JP 2013006341W WO 2014068936 A1 WO2014068936 A1 WO 2014068936A1
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- metal plate
- semiconductor module
- flat plate
- wiring pattern
- solder
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10166—Transistor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/1031—Surface mounted metallic connector elements
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10409—Screws
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a semiconductor module such as a power module incorporated in an automobile electrical device.
- a motor driving unit is provided in a housing that houses an electric motor related to steering of an automobile, and the electronic device is mounted on the motor driving unit.
- This electronic device is incorporated as a power module in the motor drive unit.
- the power module is equipped with power elements such as FET (Field Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) suitable for controlling electric devices driven by a relatively large current such as an electric power steering device. It is configured as a so-called semiconductor module.
- This type of power module is also referred to as an in-vehicle module because it is mounted on a vehicle.
- this type of semiconductor module for example, there is a technique described in Patent Document 1. In this technique, a wire is used for electrical wiring for joining a wiring pattern on a metal substrate and a bare chip transistor.
- Patent Document 2 there is a technique in which a lead component is used for electrical connection of a semiconductor element mounted on a metal substrate and solder mounted.
- the difference in height between the semiconductor element and the substrate is connected by inclining the lead parts.
- Patent Document 3 for example, there is a case where a rising bent portion is provided or a fuse shape (wave shape) is provided in the middle of the wiring in order to relieve stress of the connector wiring.
- Patent Document 1 since the technique described in Patent Document 1 employs electrical wiring using wires, it is necessary to mount the electrical wiring using a wire bonding apparatus. That is, it is necessary to perform wire bonding in a manufacturing process different from the solder mounting of other electronic components, resulting in a long manufacturing tact. In addition, since dedicated equipment for wire bonding is required, the manufacturing cost increases.
- an object of the present invention is to provide a semiconductor module capable of realizing a reduction in manufacturing tact and a reduction in manufacturing cost and an improvement in assemblability.
- an aspect of the semiconductor module according to the present invention includes a metal substrate, an insulating layer formed on the substrate, a plurality of wiring patterns formed on the insulating layer, and the plurality of wiring patterns.
- a bare chip transistor mounted on one wiring pattern via solder, an electrode formed on the top surface of the bare chip transistor and another wiring pattern among the plurality of wiring patterns are joined via solder, And a metal plate connector composed of a metal plate.
- the metal plate connector includes a horizontal flat plate portion, a first leg portion that is bent so as to fall from one end in the width direction of the flat plate portion, and is joined to the electrode, and falls from the other width direction end of the flat plate portion.
- the metal plate connector is made of any one material of copper (Cu), silver (Ag), gold (Au), copper alloy, and aluminum alloy conductor. Further, it is characterized in that it is formed in a shape having elasticity in at least one direction horizontal to the substrate.
- the metal plate connector is elastic in at least one direction in relative displacement of the metal plate connector joint that occurs during heating or cooling because the thermal expansion coefficient and thermal contraction rate are different from those of the substrate and the insulating layer. It has a shape that can be absorbed. In addition, a flat surface capable of attracting and holding the metal plate connector during assembly is provided between the first leg portion and the second leg portion. As described above, since the metal plate connector composed of the metal plate is used as the bonding member between the bare chip transistor electrode and the wiring pattern on the substrate, the bonding can be performed by solder mounting.
- the metal plate connector is a bridge shape in which the first leg portion and the second leg portion are connected by a flat plate portion, so that the position of the center of gravity of the metal plate connector is the flat surface portion of the flat plate portion. can do.
- suction suction holding including the position of the center of gravity of the metal plate connector at the time of component suction during assembly.
- the stability of the suction holding is improved, so that the stability during so-called transfer is improved, and the accuracy of the component placement position can be ensured.
- one end of the first leg portion is connected to one end in the width direction of the flat plate portion via a first bent portion, and the other end is connected to the electrode via solder.
- the other end is connected to the other end via a third bent portion, and the other end is connected to the wiring pattern via solder on the wiring pattern via the fourth bent portion. You may connect so that it may protrude in direction.
- the flat plate part of a metal plate connector can be made into the top surface spaced apart from the board
- the metal plate connector can be made more suitable for production by press molding. That is, the spring back in the press working can be suppressed, and the component accuracy can be improved.
- the first bent portion, the second bent portion, the third bent portion, and the fourth bent portion may each have an obtuse angle.
- the bonding can be performed by a solder mounting operation. That is, the bonding of the bare chip transistor electrode and the wiring pattern of the substrate and the solder mounting work performed when mounting the bare chip transistor and other substrate mounting parts on the wiring pattern on the substrate are the same equipment, and the same It can be performed simultaneously in the process. For this reason, the manufacturing tact of the semiconductor module can be shortened, and dedicated equipment for wire bonding is not required, and the manufacturing cost of the semiconductor module can be reduced.
- the metal plate connector has a bridge shape, the displacement in the vertical and horizontal directions can be absorbed, and heat shrinkage of the substrate and the metal plate connector due to heating during the reflow process included in the solder mounting operation and operating heat of the semiconductor module.
- the stress applied to the joint by thermal expansion can be relaxed, and the reliability of the joint can be ensured.
- the center of gravity can be provided on the flat surface of the metal plate connector, the components can be attracted and held in a balanced manner by attracting the position of the center of gravity of the metal plate connector when the components are attracted during assembly. Thereby, the stability at the time of transfer can be improved and the assembly arrangement position accuracy can be improved.
- FIG. 1 is a diagram showing a basic structure of an electric power steering apparatus in which a semiconductor module according to the present invention is used.
- the column shaft 2 of the steering handle 1 is connected to a tie rod 6 of a steering wheel via a reduction gear 3, universal joints 4A and 4B, and a pinion rack mechanism 5.
- the column shaft 2 is provided with a torque sensor 7 that detects the steering torque of the steering handle 1, and an electric motor 8 that assists the steering force of the steering handle 1 is connected to the column shaft 2 via the reduction gear 3.
- a torque sensor 7 that detects the steering torque of the steering handle 1
- an electric motor 8 that assists the steering force of the steering handle 1 is connected to the column shaft 2 via the reduction gear 3.
- Electric power is supplied from a battery (not shown) to the controller 10 that controls the electric power steering device, and an ignition key signal IGN (see FIG. 2) is input via an ignition key (not shown).
- the controller 10 calculates a steering assist command value serving as an assist (steering assist) command based on the steering torque Ts detected by the torque sensor 7 and the vehicle speed V detected by the vehicle speed sensor 9, and the calculated steering is performed.
- the current supplied to the electric motor 8 is controlled based on the auxiliary command value.
- the controller 10 is mainly composed of a microcomputer, and the mechanism and configuration of the control device are as shown in FIG.
- the steering torque Ts detected by the torque sensor 7 and the vehicle speed V detected by the vehicle speed sensor 9 are input to the control arithmetic unit 11 as a control arithmetic unit, and the current command value calculated by the control arithmetic unit 11 is used as the gate drive circuit 12.
- the gate drive signal formed by the gate drive circuit 12 based on the current command value or the like is input to a motor drive unit 13 having a FET bridge configuration, and the motor drive unit 13 passes through an emergency stop interrupting device 14 for three phases.
- An electric motor 8 composed of a brushless motor is driven.
- Each phase current of the three-phase brushless motor is detected by the current detection circuit 15, and the detected three-phase motor currents ia to ic are input to the control arithmetic unit 11 as feedback currents.
- a rotation sensor 16 such as a hall sensor is attached to the three-phase brushless motor, and a rotation signal RT from the rotation sensor 16 is input to the rotor position detection circuit 17, and the detected rotation position ⁇ is a control arithmetic unit. 11 is input.
- the ignition signal IGN from the ignition key is input to the ignition voltage monitor unit 18 and the power supply circuit unit 19, and the power supply voltage Vdd is input from the power supply circuit unit 19 to the control arithmetic unit 11 and a reset signal for stopping the apparatus.
- RS is input to the control arithmetic unit 11.
- blocking apparatus 14 is comprised by the relay contacts 141 and 142 which interrupt
- the FETTr1 and Tr2, the FETTr3 and Tr4, and the FETTr5 and Tr6 connected in series to the power supply line 81 are connected in series. Further, FETTr1 and Tr3, FETTr5 and Tr2, and FETTr4 and Tr6 connected in parallel to the power supply line 81 are connected to the ground line 82. This constitutes an inverter.
- the FETTr1 and Tr2 are configured such that the source electrode S of the FETTr1 and the drain electrode D of the FETTr2 are connected in series to form a c-phase arm of a three-phase motor, and a current is output from the c-phase output line 91c.
- the FETTr3 and Tr4 are configured such that the source electrode S of the FETTr3 and the drain electrode D of the FETTr4 are connected in series to form an a-phase arm of a three-phase motor, and a current is output from the a-phase output line 91a.
- the FETTr5 and Tr6 are configured such that the source electrode S of the FETTr5 and the drain electrode D of the FETTr6 are connected in series to form a b-phase arm of a three-phase motor, and a current is output from the b-phase output line 91b.
- the controller 10 includes a case 20, a semiconductor module 30 as a power module including the motor drive unit 13, and heat dissipation. Sheet 39, control circuit board 40 including control arithmetic device 11 and gate drive circuit 12, power and signal connector 50, three-phase output connector 60, and cover 70.
- the case 20 is formed in a substantially rectangular shape, and is provided on the flat-plate-shaped semiconductor module mounting portion 21 for mounting the semiconductor module 30 and the longitudinal end portion of the semiconductor module mounting portion 21.
- the semiconductor module mounting portion 21 is formed with a plurality of screw holes 21a into which mounting screws 38 for mounting the semiconductor module 30 are screwed.
- a plurality of mounting posts 24 for mounting the control circuit board 40 are erected on the semiconductor module mounting portion 21 and the power and signal connector mounting portion 22, and the control circuit board 40 is mounted on each mounting post 24.
- a screw hole 24a into which a mounting screw 41 for mounting is screwed is formed.
- the three-phase output connector mounting portion 23 is formed with a plurality of screw holes 23a into which mounting screws 61 for attaching the three-phase output connector 60 are screwed.
- the semiconductor module 30 has the circuit configuration of the motor drive unit 13 described above. As shown in FIG. 4, the substrate 31 has six FETs Tr1 to Tr6, a positive terminal 81a connected to the power supply line 81, and A negative terminal 82a connected to the ground line 82 is mounted. Further, the substrate 31 has a phase output terminal 92a connected to the phase a output line 91a, phase b output terminal 92b connected to the phase b output line 91b, and phase c output connected to the phase c output line 91c. A three-phase output unit 90 including a terminal 92c is mounted. In addition, other board mounting components 37 including a capacitor are mounted on the board 31. Further, the substrate 31 of the semiconductor module 30 is provided with a plurality of through holes 31a through which mounting screws 38 for mounting the semiconductor module 30 are inserted.
- each of the FETs Tr1 to Tr6 is composed of a bare chip FET (bare chip transistor) 35, and includes a source electrode S and a gate electrode G on the bare chip FET 35 as shown in FIG. It has an electrode.
- the semiconductor module 30 includes a metal substrate 31, and an insulating layer 32 is formed on the substrate 31.
- the substrate 31 is made of a metal such as aluminum.
- On the insulating layer 32 a plurality of wiring patterns 33a to 33d are formed.
- Each of the wiring patterns 33a to 33d is made of a metal such as copper or aluminum, or an alloy containing this metal.
- a bare chip FET 35 constituting each of the FETs Tr1 to Tr6 is mounted on one wiring pattern 33a among the plurality of wiring patterns 33a to 33d via solder 34a.
- the drain electrode formed on the lower surface of the bare chip FET 35 is joined to the wiring pattern 33a via the solder 34a.
- the source electrode S of the bare chip FET 35 and the other wiring pattern 33b among the plurality of wiring patterns 33a to 33d are joined by the source electrode metal plate connector 36a via the solders 34e and 34b, respectively.
- the source electrode metal plate connector 36a is formed by punching and bending a metal plate, and extends by being bent so as to fall from one end in the width direction of the flat plate portion 36aa and the flat plate portion 36aa,
- the connecting portion 36ab joined to the source electrode S of the bare chip FET 35 via the solder 34e and the bent portion so as to fall from the other end in the width direction of the flat plate portion 36aa are extended and joined to the wiring pattern 33b via the solder 34b.
- the connection part 36ac is provided.
- the gate electrode G of the bare chip FET 35 and the other wiring pattern 33c among the plurality of wiring patterns 33a to 33d are joined by the gate electrode metal plate connector 36b via solders 34f and 34c, respectively.
- the metal plate connector 36b for the gate electrode is formed by punching and bending a metal plate, and is bent and extended so as to fall from one end in the width direction of the flat plate portion 36ba and the flat plate portion 36ba.
- a connection part 36bc is formed among the plurality of wiring patterns 33a to 33d formed on the insulating layer 32.
- another board mounting component 37 such as a capacitor is mounted on another wiring pattern 33d via solder 34d.
- the source electrode metal plate connector 36a is formed by a bridge shape including a flat plate portion 36 aa, a connection portion 36 ab (first leg portion), and a connection portion 36 ac (second leg portion). It has become. More specifically, in the source electrode metal plate connector 36a, one end of the connection portion 36ab is connected to one end of the flat plate portion 36aa in the left-right direction (X-axis direction in FIG. 7) via the first bent portion 36ad. The other end of the connecting portion 36ab is formed with an outward joint surface 36af via the second bent portion 36ae. The lower surface of the bonding surface 36af is bonded to the source electrode S of the bare chip FET 35 via the solder 34e.
- the connecting portion 36ab has a narrow portion 36ag in the vicinity of the joint surface 36af.
- the narrow portion 36ag has a tapered shape that becomes narrower from the first bent portion 36ad toward the second bent portion 36ae.
- One end of the connecting portion 36ac is connected to the other end portion in the left-right direction of the flat plate portion 36aa via the third bent portion 36ah, and the other end of the connecting portion 36ac is directed outward via the fourth bent portion 36ai.
- a joint surface 36aj is formed. The lower surface of the bonding surface 36aj is bonded to the wiring pattern 33b via the solder 34b.
- FIGS. 8A and 8B are diagrams showing the shape of the metal plate connector 36a for source electrode, where FIG. 8A is a plan view and FIG. 8B is a front view.
- the source electrode metal plate connector 36a is provided with progressive cut portions 36ak at the time of press molding at both ends in the front-rear direction (vertical direction in FIG. 8 (b)) of the flat plate portion 36aa.
- the progressive cut portion 36ak is formed to protrude outward in the front-rear direction of the flat plate portion 36aa. Further, as shown in FIG.
- the source electrode metal plate connector 36a has four bent portions (36ad, 36ae, 36ah, 36ai), and has a substantially hat-shaped cross section which also has a bridge shape.
- the angle ⁇ of each bent portion is an obtuse angle (for example, 95 °).
- the shape of the metal plate connector 36a for the source electrode can take any shape as long as it is a bridge shape capable of joining the source electrode S and the wiring pattern 33b.
- the narrow portion 36ag may not be provided.
- reflow bonding which will be described later, is performed at the time of solder bonding and the semiconductor module 30 is operated, the temperature is increased by heat generation. The same applies to the metal plate connector 36b for the gate electrode.
- the flat plate portion 36aa of the source electrode metal plate connector 36a and the flat plate portion 36ba of the gate electrode metal plate connector 36b have a center of gravity (flat surface) on a flat surface (flat surface).
- the design items are determined in advance so that C) comes, and the metal plate connector 36a for the source electrode and the metal plate connector 36b for the gate electrode are attracted and sucked at the center of gravity, so that stability during transfer is ensured. Is done.
- Metal connectors 36a, 36b of the flat plate portion 36aa, adsorption range of the position of the center of gravity in the 36ba is preferably 2 mm 2 approximately of the area, and more preferably 2 ⁇ 5 mm 2 approximately of the area.
- the thickness of the flat plate portion 36aa (flat plate portion 36ba) is set to the other portion of the source electrode metal plate connector 36a (gate electrode metal plate connector 36b), that is, the connection portion 36ab (connection portion 36bb), the connection
- the thickness is preferably larger than the thickness of the portion 36ac (connection portion 36bc), the joining surface 36af, and the joining surface 36aj.
- the plate thickness of the flat plate portion 36aa (flat plate portion 36ba) is not particularly limited.
- the other portion of the source electrode metal plate connector 36a (gate electrode metal plate connector 36b), that is, the connection portion. 36ab (connection part 36bb), connection part 36ac (connection part 36bc), joint surface 36af, and the thickness of the joint surface 36aj may be approximately three times the plate thickness.
- the semiconductor module 30 configured as described above is attached to the semiconductor module mounting portion 21 of the case 20 by a plurality of mounting screws 38.
- the substrate 31 of the semiconductor module 30 is formed with a plurality of through holes 31a through which the mounting screws 38 are inserted.
- the control circuit board 40 constitutes a control circuit including the control arithmetic device 11 and the gate drive circuit 12 by mounting a plurality of electronic components on the board.
- the control circuit board 40 After the semiconductor module 30 is mounted on the semiconductor module mounting portion 21, the control circuit board 40 has a plurality of standing uprights on the semiconductor module mounting portion 21 and the power and signal connector mounting portion 22 from above the semiconductor module 30.
- a plurality of mounting screws 41 are mounted on the mounting post 24.
- the control circuit board 40 has a plurality of through holes 40a through which the mounting screws 41 are inserted.
- the power and signal connector 50 is used to input a DC power source from a battery (not shown) to the semiconductor module 30 and various signals including signals from the torque sensor 12 and the vehicle speed sensor 9 to the control circuit board 40. Used.
- the power and signal connector 50 is attached to the power and signal connector mounting portion 22 provided on the semiconductor module mounting portion 21 with a plurality of mounting screws 51.
- the three-phase output connector 60 is used to output current from the a-phase output terminal 92a, the b-phase output terminal 92b, and the c-phase output terminal 92c.
- the three-phase output connector 60 is attached to the three-phase output connector mounting portion 23 provided at the end in the width direction of the semiconductor module mounting portion 21 by a plurality of mounting screws 61.
- the three-phase output connector 60 is formed with a plurality of through holes 60a through which the mounting screws 61 are inserted.
- the cover 70 covers the case 20 to which the semiconductor module 30, the control circuit board 40, the power and signal connector 50, and the three-phase output connector 60 are attached from above the control circuit board 40. It is attached to cover.
- the semiconductor module 30 First, as shown in FIG. 10A, the insulating layer 32 is formed on one main surface of the metal substrate 31 (insulating layer forming step). Next, a plurality of wiring patterns 33a to 33d are formed on the insulating layer 32 (wiring pattern forming step). Thereafter, as shown in FIG. 10B, solder paste (solders 34a to 34d) is applied onto the plurality of wiring patterns 33a to 33d, respectively (solder paste applying step). Then, as shown in FIG.
- one of the bare chip FETs 35 is mounted on the solder paste (solder 33a) applied on one wiring pattern 33a among the plurality of wiring patterns 33a to 33d (bare chip).
- FET mounting step) another board mounting component 37 is mounted on the solder paste (solder 34d) applied on the other wiring pattern 33d.
- Other bare chip FETs 35 are also mounted on the same or separate wiring pattern as the wiring pattern 33a.
- solder paste (solder 34e, 34f) is applied on the source electrode S and the gate electrode D formed on the upper surface of the bare chip FET 35 (solder paste application step).
- solder paste (solder 34e) applied on the source electrode S of the bare chip FET 35 and the wiring pattern 33a other than the wiring pattern 33a on which the bare chip FET 35 is mounted among the plurality of wiring patterns 33a to 33d.
- the source electrode metal plate connector 36a is mounted on the solder paste (solder 34b) applied on the other wiring pattern 33b (source electrode metal plate connector mounting step).
- the semiconductor module intermediate assembly is configured.
- the semiconductor module intermediate assembly constituted by the above steps is put in a reflow furnace (not shown), and the solder 34a between one wiring pattern 33a and the bare chip FET 35 among the plurality of wiring patterns 33a to 33d. Bonding, wiring pattern 33d and other substrate mounting component 37 via solder 34d, source electrode S formed on the upper surface of bare chip FET 35 and source electrode metal plate connector 36a via solder 34e.
- the source electrode metal plate connector 36a is used to join the source electrode S of the bare chip FET 35 and the wiring pattern 33b on the substrate 31, and the gate electrode G of the bare chip FET 35 and another wiring pattern 33c on the substrate 31 are joined. Further, by using the gate electrode metal plate connector 36b, these joints can be performed by a solder mounting operation. That is, the bonding between the source electrode S of the bare chip FET 35 and the wiring pattern 33b on the substrate 31 and the bonding between the gate electrode G of the bare chip FET 35 and another wiring pattern 33c on the substrate 31 are performed by the bare chip FET 35 and other substrate mounting components 37.
- the manufacturing tact of the semiconductor module 30 can be shortened, and dedicated equipment for wire bonding is not required, and the manufacturing cost of the semiconductor module 30 can be reduced.
- aluminum is used for the substrate 31 of the semiconductor module 30, and a material having both rigidity and high electrical conductivity is used for the metal plate connector 36a for the source electrode and the metal plate connector 36b for the gate electrode.
- Aluminum has a linear expansion coefficient of 23.6 ⁇ 10 ⁇ 6 / ° C., and as an example, a copper material has a linear expansion coefficient of 16.8 ⁇ 10 ⁇ 6 / ° C. That is, the substrate 31 is more easily deformed with respect to temperature changes than the source electrode metal plate connector 36a and the gate electrode metal plate connector 36b.
- each side of the bridge shape can be deformed in a direction in which each bent portion is bent as well as being expanded and contracted.
- the bridge-shaped skeleton can absorb the displacement in the vertical and horizontal directions (Z-axis direction and X-axis direction in FIG. 7). That is, even when the substrate 31 and the metal plate connectors 36a and 36b are deformed due to thermal expansion and contraction, the metal plate connectors 36a and 36b can be easily bent.
- the metal plate connectors 36a and 36b can appropriately absorb and absorb the displacement when the metal plate connectors 36a and 36b are deformed by the reflow process or the heat generated during the EPS operation, so that the metal plate connectors 36a and 36b and the bare chip FET 35 can be absorbed. Can be prevented from peeling off, and the reliability of electrical connection can be ensured.
- the center of gravity (C) can be provided on the flat surface (flat plate portion 36aa) at the substantially central portion of the metal plate connectors 36a and 36b. Therefore, when the metal plate connectors 36a and 36b are sucked and held by the transport tool with air when mounted on the substrate 31, this flat surface can be used as a suction surface. Therefore, the metal plate connectors 36a and 36b can be attracted and held in a balanced manner, and the component placement position accuracy can be improved.
- the metal plate connectors 36a and 36b are installed and solder-bonded in a state where a positional deviation has occurred from the normal installation position, the bonding area with the electrode and the wiring pattern becomes smaller than the normal bonding area. Therefore, problems such as overheating and ignition may occur when a high current flows.
- the metal plate connectors 36a and 36b are transferred while the center of gravity (C) is attracted and held, the metal plate connectors 36a and 36b can be installed with excellent positioning accuracy, and misalignment (for example, as shown in FIG. 7).
- the metal plate connectors 36a and 36b can be placed in the proper positions without causing any positional deviation in the state of movement in the X-axis direction, Y-axis direction, or Z-axis direction, or in the state of rotation about the Z-axis). Can be installed. Therefore, even when a high current flows, problems such as overheating and ignition hardly occur. Further, the metal plate connectors 36a and 36b are suitable for high-density mounting because they can be accurately installed at regular installation positions.
- the progressive cut part 36ak is provided in the flat surface (flat-plate part 36aa) of the metal plate connectors 36a and 36b, it becomes easy to cut and it can suppress the deformation
- angles of the four bent portions are obtuse, the releasability during press molding can be improved, which contributes to the reduction of manufacturing costs. If the angle of the four bent portions is obtuse, the stress acts on the metal plate connectors 36a and 36b inward in the width direction of the flat plate portion 36aa and the flat plate portion 36ba. 36b can be installed in a stable state.
- the metal plate connectors 36a and 36b have a bridge shape, the displacement absorbability can be improved.
- the metal plate connectors 36a and 36b have a bridge shape, the air adsorption surface by the jig at the time of assembly is a flat surface and the center of gravity, so that the stability when mounting the component on the board can be ensured, so that the misalignment is prevented. And reliability of electrical contact can be ensured.
- the metal plate connector is a material that combines rigidity and high electrical conductivity, such as copper (Cu), silver (Ag), gold (Au), copper alloy, aluminum alloy conductor, etc., and is elastic at least in the horizontal direction with the substrate. Formed to have.
- the bare chip FET 35 is used in the semiconductor module 30, other bare chip transistors such as the bare chip IGBT may be used instead of the bare chip FET 35.
- other bare chip transistors are used, by metal plate connectors, on the electrodes formed on the upper surface of the bare chip transistor and on other wiring patterns other than the wiring pattern in which the bare chip transistors are joined among the plurality of wiring patterns May be joined via solder.
- the emitter electrode and the gate electrode formed on the bare chip IGBT are respectively joined to the wiring pattern on the substrate via solder using a metal plate connector.
- the bare chip IGBT is used and the emitter electrode and the gate electrode formed on the bare chip IGBT are respectively joined to the wiring pattern on the substrate using the metal plate connector via the solder.
- the metal plate connector for the source electrode is a first metal plate connector for the source electrode that is 180 ° straight with respect to the metal plate connector for the gate electrode. (Refer to Tr2 and Tr4 in FIG. 4) and a second source electrode metal plate connector (see Tr1, Tr3, and Tr5 in FIG. 4) that is 90 ° perpendicular to the gate electrode metal plate connector.
- Tr1, Tr3, and Tr5 in FIG. 4 One type selected from one type of metal plate connector for a gate electrode, two types of metal plate connectors for a first source electrode, and a second type of metal plate connector for a bare chip FET.
- One source electrode metal plate connector may be used in combination.
- the arrangement of the first source electrode metal plate connector with respect to the gate electrode metal plate connector is preferably 95 to 265 °. 160 to 200 °, more preferably 175 to 185 °, and most preferably 180 °.
- the arrangement of the second source electrode metal plate connector with respect to the gate electrode metal plate connector is preferably 5 to 175 °. 70 to 120 °, more preferably 85 to 95 °, and most preferably 90 °.
- this semiconductor module like the semiconductor module 30 described above, a degree of freedom is provided in the arrangement of the bare chip transistors mounted on the substrate, the degree of freedom in designing the wiring on the substrate is increased, and the semiconductor module on the substrate is increased.
- the layout can be made compact. Furthermore, it is possible to easily make the length of the path of each phase of the three-phase motor on the substrate the same. As a result, the phase characteristics of the three-phase motor, particularly the impedance characteristics of each phase, can be easily matched, and ripple accuracy such as torque and speed can be improved.
- Feed cutting part 36b ... Metal plate connector for gate electrode, 36ba ... Flat plate part, 36bb ... Connection part, 36bc ... Connection part, 37 ... Board mounting component, 38 ... Mounting screw, 39 ... Heat dissipation sheet, 40 ... Control circuit board 40a ... through hole, 41 ... mounting screw, 50 ... power and signal connector, 51 ... mounting screw, 60 ... three-phase output connector, 60a ... through hole, 61 ... mounting screw 70 ... Cover, 81 ... Power line, 81a ... Positive terminal, 82 ... Ground line, 82a ... Negative terminal, 90 ... Three-phase output unit, 91a ... a-phase output line, 91b ... b-phase output line, 91c ... c-phase output Line, G ... Gate electrode (electrode), S ... Source electrode (electrode), C ... Center of gravity
Abstract
Description
従来、この種の半導体モジュールとして、例えば、特許文献1に記載の技術がある。この技術は、金属基板上の配線パターンとベアチップトランジスタとを接合する電気的配線にワイヤを使用したものである。
さらに、例えば特許文献3に記載の技術のように、コネクタ配線の応力緩和を行うために、立ち上がり曲げ部を設けたり、配線途中にヒューズ形状(波形状)を設けたりするものもある。
さらに、上記特許文献3に記載の技術にあっては、配線途中にヒューズ形状を設けているため、組立時に部品吸着できる位置は、端部に形成された平坦面になる。したがって、この場合にも、部品吸着保持時の重量バランスが悪く、部品配置時の位置ずれが懸念される。
そこで、本発明は、製造タクトの短縮と製造コストの削減とを実現すると共に、組立性を向上することができる半導体モジュールを提供することを課題としている。
このように、ベアチップトランジスタの電極と基板上の配線パターンとの接合部材として、金属板で構成される金属板コネクタを用いる形態であるため、これらの接合を半田実装により行える。すなわちベアチップトランジスタの電極と基板上の配線パターンとの接合と、ベアチップトランジスタやその他の基板実装部品を基板上の配線パターン上に実装する際に行われる半田実装作業とを同一の設備、更には、同一の工程で同時に行うことができる。このため、半導体モジュールの製造タクトを短くすることができると共に、ワイヤボンディングの専用設備が不要になり、半導体モジュールの製造コストを安価にすることができる。
さらに、上記半導体モジュールにおいて、前記第1屈曲部、前記第2屈曲部、前記第3屈曲部及び前記第4屈曲部の角度は、それぞれ鈍角であってもよい。
このように、4つの屈曲部の角度を鈍角とすることで、プレス成形時における離型性を良くすることができ、製造コストの低減に寄与する。
図1は、本発明に係る半導体モジュールが用いられる電動パワーステアリング装置の基本構造を示す図である。
図1の電動パワーステアリング装置において、操向ハンドル1のコラム軸2は、減速ギア3、ユニバーサルジョイント4A及び4B、ピニオンラック機構5を経て操向車輪のタイロッド6に連結されている。コラム軸2には、操向ハンドル1の操舵トルクを検出するトルクセンサ7が設けられており、操向ハンドル1の操舵力を補助する電動モータ8が減速ギア3を介してコラム軸2に連結されている。電動パワーステアリング装置を制御するコントローラ10には、バッテリー(図示せず)から電力が供給されるとともに、イグニションキー(図示せず)を経てイグニションキー信号IGN(図2参照)が入力される。コントローラ10は、トルクセンサ7で検出された操舵トルクTsと車速センサ9で検出された車速Vとに基づいて、アシスト(操舵補助)指令となる操舵補助指令値の演算を行い、演算された操舵補助指令値に基づいて電動モータ8に供給する電流を制御する。
トルクセンサ7で検出された操舵トルクTs及び車速センサ9で検出された車速Vは制御演算部としての制御演算装置11に入力され、制御演算装置11で演算された電流指令値をゲート駆動回路12に入力する。電流指令値等に基づいてゲート駆動回路12で形成されたゲート駆動信号は、FETのブリッジ構成で成るモータ駆動部13に入力され、モータ駆動部13は非常停止用の遮断装置14を経て3相ブラシレスモータで構成される電動モータ8を駆動する。3相ブラシレスモータの各相電流は電流検出回路15で検出され、検出された3相のモータ電流ia~icは制御演算装置11にフィードバック電流として入力される。また、3相ブラシレスモータには、ホールセンサ等の回転センサ16が取り付けられており、回転センサ16からの回転信号RTがロータ位置検出回路17に入力され、検出された回転位置θが制御演算装置11に入力される。
また、イグニションキーからのイグニション信号IGNはイグニション電圧モニタ部18及び電源回路部19に入力され、電源回路部19から電源電圧Vddが制御演算装置11に入力されるとともに、装置停止用となるリセット信号RSが制御演算装置11に入力される。さらに、遮断装置14は、2相を遮断するリレー接点141及び142で構成されている。
ここで、ケース20は、略矩形状に形成され、半導体モジュール30を載置するための平板状の半導体モジュール載置部21と、半導体モジュール載置部21の長手方向端部に設けられた、電力及び信号用コネクタ50を実装するための電力及び信号用コネクタ実装部22と、半導体モジュール載置部21の幅方向端部に設けられた、3相出力用コネクタ60を実装するための3相出力用コネクタ実装部23とを備えている。
半導体モジュール30は、図6に示すように、金属製の基板31を備え、基板31の上には、絶縁層32が形成されている。基板31は、アルミニウムなどの金属製である。また、この絶縁層32上には、複数の配線パターン33a~33dが形成されている。各配線パターン33a~33dは、銅やアルミニウムなどの金属、又はこの金属を含む合金で構成される。
また、絶縁層32上に形成された複数の配線パターン33a~33dのうち更にもう一つ他の配線パターン33d上には半田34dを介してコンデンサなどの他の基板実装部品37が実装される。
ソース電極用金属板コネクタ36aは、図7に斜視図を示すように、平板部36aaと、接続部36ab(第1の脚部)と、接続部36ac(第2の脚部)とでブリッジ形状となっている。より具体的には、ソース電極用金属板コネクタ36aは、平板部36aaの左右方向(図7のX軸方向)一端部に、第1屈曲部36adを介して接続部36abの一端が接続されており、接続部36abの他端は、第2屈曲部36aeを介して外向きの接合面36afが形成されている。この接合面36afの下面が半田34eを介してベアチップFET35のソース電極Sに接合される。
平板部36aaの左右方向他端部には、第3屈曲部36ahを介して接続部36acの一端が接続されており、接続部36acの他端は、第4屈曲部36aiを介して外向きの接合面36ajが形成されている。この接合面36ajの下面が半田34bを介して配線パターン33bに接合される。
図8(a)に示すように、ソース電極用金属板コネクタ36aは、平板部36aaの前後方向(図8(b)の上下方向)両端部に、プレス成形時の順送カット部36akを設ける。この順送カット部36akは、平板部36aaの前後方向外側に突出して形成されている。また、図8(b)に示すように、ソース電極用金属板コネクタ36aは、4つの屈曲部(36ad,36ae,36ah,36ai)を備えており、ブリッジ形状も兼ね備えた断面略ハット型の形状を有する。ここで、各屈曲部の角度θは、鈍角(例えば95°)であるものとする。
なお、半導体モジュール30を半導体モジュール載置部21上に取り付けるに際しては、放熱用シート39を半導体モジュール載置部21上に取付け、その放熱用シート39の上から半導体モジュール30を取り付ける。この放熱用シート39により、半導体モジュール30で発生した熱が放熱用シート39を介してケース20に放熱される。
また、電力及び信号用コネクタ50は、バッテリー(図示せず)からの直流電源を半導体モジュール30に、トルクセンサ12や車速センサ9からの信号を含む各種信号を制御回路基板40に入力するために用いられる。電力及び信号用コネクタ50は、半導体モジュール載置部21に設けられた電力及び信号用コネクタ実装部22に複数の取付けねじ51により取り付けられる。
更に、カバー70は、半導体モジュール30、制御回路基板40、電力及び信号用コネクタ50、及び3相出力用コネクタ60が取り付けられたケース20に対し、制御回路基板40の上方から当該制御回路基板40を覆うように取り付けられる。
半導体モジュール30の製造に際し、先ず、図10(a)に示すように、金属製の基板31の一方の主面上に絶縁層32を形成する(絶縁層形成工程)。次いで、絶縁層32上に複数の配線パターン33a~33dを形成する(配線パターン形成工程)。
その後、図10(b)に示すように、複数の配線パターン33a~33d上にそれぞれ半田ペースト(半田34a~34d)を塗布する(半田ペースト塗布工程)。
そして、図10(c)に示すように、複数の配線パターン33a~33dのうち一つの配線パターン33a上に塗布された半田ペースト(半田33a)上にベアチップFET35の一つを搭載するとともに(ベアチップFET搭載工程)、他の配線パターン33d上に塗布された半田ペースト(半田34d)上にその他の基板実装部品37を搭載する。その他のベアチップFET35についても、配線パターン33aと同一あるいは別個の配線パターン上に搭載する。
その後、図10(e)に示すように、ベアチップFET35のソース電極S上に塗布された半田ペースト(半田34e)上及び複数の配線パターン33a~33dのうちベアチップFET35が搭載された配線パターン33a以外の他の配線パターン33b上に塗布された半田ペースト(半田34b)上に、ソース電極用金属板コネクタ36aを搭載する(ソース電極用金属板コネクタ搭載工程)。
また、ベアチップFET35のゲート電極G上に塗布された半田ペースト(半田34f)上、及び複数の配線パターン33a~33dのうちベアチップFET35が搭載された配線パターン33a及びソース電極用金属板コネクタ36aが搭載された配線パターン33b以外の更に他の配線パターン33c上に塗布された半田ペースト(半田34c)上に、ゲート電極用金属板コネクタ36bを搭載する(ゲート電極用金属板コネクタ搭載工程)。これにより、半導体モジュール中間組立体が構成される。
これにより、半導体モジュール30は完成する。
そのため、リフロー工程や、電動パワーステアリング(EPS)作動中の発熱により高温となると、基板31と金属板コネクタ36a,36bとの膨張率の違いにより、金属板コネクタ36a,36bに応力がかかる。このとき、金属板コネクタ36a,36bがこの応力を緩和できない構造となっていると、ベアチップFET35との半田接合が剥がれてしまうおそれがある。
このように、金属板コネクタ36a及び36bは、リフロー工程で変形する場合や、EPS作動中の発熱で変形する場合に、適切に変位吸収することができるので、金属板コネクタ36a及び36bとベアチップFET35との半田接合の剥がれを防止することができ、電気的接続の信頼性を確保することができる。
また、金属板コネクタ36a,36bに4つの屈曲部を設け、ブリッジ形状を兼ね備えた断面略ハット型の形状とするので、プレス成形による製造により一層適したものとすることができる。すなわち、プレス加工によるスプリングバックを防止し、部品精度を向上させることができる。さらに、4つの屈曲部の角度を鈍角とするので、プレス成形時における離型性を良くすることができ、製造コストの低減に寄与する。また、4つの屈曲部の角度が鈍角であると、金属板コネクタ36a,36bに対して応力が平板部36aa、平板部36baの幅方向内向きに作用することとなるので、金属板コネクタ36a,36bを安定した状態で設置することができる。
また、金属板コネクタは、銅(Cu)、銀(Ag)、金(Au)、銅合金、アルミニウム合金導体などの剛性と高電気導電率を兼ね備えた材料で、少なくとも基板と水平方向に弾性を有するように形成される。
例えば、半導体モジュール30においてベアチップFET35を用いているが、ベアチップFET35に限らず、ベアチップIGBTなどの他のベアチップトランジスタを用いてもよい。そして、その他のベアチップトランジスタを用いる場合には、金属板コネクタにより、ベアチップトランジスタの上面に形成された電極上と複数の配線パターンのうちベアチップトランジスタが接合された配線パターン以外の他の配線パターン上とを半田を介して接合すればよい。これにより、ベアチップトランジスタの電極と基板上の配線パターンとの接合をベアチップトランジスタやその他の基板実装部品を基板上の配線パターン上に実装する際に行われる半田実装作業と同一の設備、更には、同一の工程で同時に行うことができる。
このように、ベアチップIGBTを用い、ベアチップIGBT上に形成されたエミッタ電極及びゲート電極を、それぞれ、金属板コネクタを用いて基板上の配線パターンに半田を介して接合する場合には、ベアチップIGBTのエミッタ電極と基板上の配線パターンとの接合及びベアチップIGBTのゲート電極と基板上の別の配線パターンとの接合を、ベアチップIGBTやその他の基板実装部品を基板上の配線パターン上に実装する際に行われる半田実装作業と同一の設備、更には、同一の工程で同時に行うことができる。
また、ゲート電極用金属板コネクタに対する第2ソース電極用金属板コネクタの配置(ゲート電極用金属板コネクタと第2ソース電極用金属板コネクタのなす角度)は、5~175°とすることが好ましく、70~120°とすることがより好ましく、85~95°とすることがさらに好ましく、90°とすることが最も好ましい。
Claims (3)
- 金属製の基板と、該基板の上に形成された絶縁層と、該絶縁層上に形成された複数の配線パターンと、該複数の配線パターンのうち一つの配線パターン上に半田を介して実装されるベアチップトランジスタと、該ベアチップトランジスタの上面に形成された電極上と前記複数の配線パターンのうち他の配線パターン上とを半田を介して接合する、金属板で構成される金属板コネクタとを備え、
前記金属板コネクタは、水平な平板部と、該平板部の幅方向一端から立ち下がるように折り曲げられ前記電極上に接合される第1の脚部と、前記平板部の幅方向他端から立ち下がるように折り曲げられ前記他の配線パターン上に接合される第2の脚部とを有してブリッジ形状をなし、前記金属板コネクタは、銅(Cu)、銀(Ag)、金(Au)、銅合金及びアルミニウム合金導体のうちのいずれか1つの材料で、少なくとも水平方向に弾性を有するように形成され、
前記金属板コネクタの前記第1の脚部と前記第2の脚部との間を接続する前記平板部は、平面上に重心がありかつ平面であることを特徴とする半導体モジュール。 - 前記第1の脚部は、その一端が前記平板部の幅方向一端に第1屈曲部を介して接続されると共に、その他端には、前記電極上に半田を介して接合される接合面が、第2屈曲部を介して前記平板部の幅方向外向きに突出するように接続されており、
前記第2の脚部は、その一端が前記平板部の幅方向他端に第3屈曲部を介して接続されると共に、その他端には、前記配線パターン上に半田を介して接合される接合面が、第4屈曲部を介して前記平板部の幅方向外向きに突出するように接続される請求項1に記載の半導体モジュール。 - 前記第1屈曲部、前記第2屈曲部、前記第3屈曲部及び前記第4屈曲部の角度は、それぞれ鈍角であることを特徴とする請求項2に記載の半導体モジュール。
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Also Published As
Publication number | Publication date |
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US9609775B2 (en) | 2017-03-28 |
CN103930981A (zh) | 2014-07-16 |
EP2916349A1 (en) | 2015-09-09 |
EP2916349A4 (en) | 2016-08-31 |
US20150342074A1 (en) | 2015-11-26 |
JPWO2014068936A1 (ja) | 2016-09-08 |
CN103930981B (zh) | 2016-07-13 |
EP2916349B1 (en) | 2021-03-03 |
JP5741772B2 (ja) | 2015-07-01 |
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