WO2014061971A1 - Elément émetteur de lumière à semi-conducteurs à luminosité élevée ayant une tranchée de séparation de régions émettrices de lumière et un excellent effet de dispersion de courant - Google Patents

Elément émetteur de lumière à semi-conducteurs à luminosité élevée ayant une tranchée de séparation de régions émettrices de lumière et un excellent effet de dispersion de courant Download PDF

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WO2014061971A1
WO2014061971A1 PCT/KR2013/009208 KR2013009208W WO2014061971A1 WO 2014061971 A1 WO2014061971 A1 WO 2014061971A1 KR 2013009208 W KR2013009208 W KR 2013009208W WO 2014061971 A1 WO2014061971 A1 WO 2014061971A1
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layer
extension electrode
semiconductor layer
trench
light emitting
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PCT/KR2013/009208
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English (en)
Korean (ko)
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황성주
김동우
송정섭
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일진엘이디(주)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Definitions

  • the present invention relates to a semiconductor light emitting device having improved luminance characteristics, including a light emitting region isolation trench and a contact hole structure.
  • a conventional semiconductor light emitting device is, for example, a GaN nitride semiconductor light emitting device, which is a high-speed switching device such as a blue or green LED light emitting device, MESFET and HEMT in the application field And high output devices.
  • FIG. 1 schematically shows a general nitride-based semiconductor light emitting device.
  • a nitride semiconductor light emitting device is formed from a growth substrate 11. More specifically, the nitride based light emitting device includes an n-type nitride semiconductor layer 12, an active layer 13, and a p-type nitride semiconductor layer 14.
  • an n-side electrode pad 15 electrically connected to the n-type nitride semiconductor layer 12 is formed.
  • a p-side electrode pad 16 electrically connected to the p-type nitride semiconductor layer 14 is formed.
  • the p-type nitride semiconductor layer has a high specific resistance. Therefore, the current is not evenly distributed in the p-type nitride semiconductor layer, and the current is concentrated in the portion where the p-side electrode pad is formed.
  • planar structure light emitting device in which two electrodes are arranged almost horizontally on the upper surface of the light emitting structure has a uniform current flow in the entire light emitting area as compared to the vertical structure light emitting device.
  • the effective area to join is not large.
  • the light emitting device is gradually increasing in size to about 1 mm 2 or more.
  • the problem of current dispersion due to the large area has been recognized as an important technical problem in semiconductor light emitting devices.
  • n-side electrode and p-side electrode include a plurality of electrode fingers that extend and engage with each other at regular intervals. Through this electrode structure, it was intended to provide an additional current path, secure a large effective emission area, and form a uniform current flow.
  • the present inventors have conducted research and efforts to develop a semiconductor light emitting device having a structure capable of exhibiting an excellent current dispersion effect, and as a result, the first semiconductor layer exposed inside the contact hole and the upper portion of the second semiconductor layer formed to expose the first semiconductor layer.
  • a first extension electrode that electrically connects the second electrode, a trench that can separate a plurality of light emitting regions, a gap between the second semiconductor layer and the first extension electrode, between the sidewall of the contact hole and the first extension electrode;
  • the present invention has been completed by discovering that an insulating layer is formed between the surface of the trench and the first extension electrode to form a semiconductor light emitting device having a plurality of light emitting regions, thereby maximizing current dispersion to improve luminance.
  • an object of the present invention is to provide a semiconductor light emitting device having an electrode structure and a trench for separating a light emitting region, which exhibit excellent current dispersion effects.
  • the semiconductor light emitting device of the present invention is characterized in that a plurality of light emitting regions are separated by the trench.
  • the semiconductor light emitting device of the present invention is formed such that the current diffusion contact hole exposes the first semiconductor layer, and a first extension electrically connecting the first semiconductor layer exposed by the current diffusion contact hole. And an second extension electrode electrically connected to the electrode and the second semiconductor layer.
  • the semiconductor light emitting device of the present invention includes an insulating layer electrically insulating the first extension electrode and the active layer, the second semiconductor layer or the trench region, and electrically insulating the second extension electrode and the trench region.
  • the insulating layer may be formed between the second semiconductor layer and the first extension electrode, between the sidewall of the current diffusion contact hole and the first extension electrode, and between the surface of the trench and the first extension electrode.
  • the semiconductor light emitting device of the present invention can spread the current flowing through the semiconductor layer evenly to increase the effective light emitting area.
  • the respective light emitting regions are separated by the light emitting region isolation trenches, the same effects as those of individual elements connected in parallel can be obtained, and the light efficiency can be improved.
  • FIG. 1 is a cross-sectional view showing a cross section of a conventional semiconductor light emitting device.
  • FIG. 2 is a plan view of a semiconductor light emitting device according to an embodiment of the present invention.
  • FIG. 3 is a cross-sectional view taken along the line A-A of FIG. 2.
  • FIG. 4 is a cross-sectional view taken along the line B-B of FIG. 2.
  • FIG. 5 is a plan view of a semiconductor light emitting device according to a comparative example of the present invention.
  • the first semiconductor layer is an n-type nitride layer
  • the second semiconductor layer is a p-type nitride layer
  • the first extension electrode is an n-side extension electrode
  • the second extension electrode is a p-side extension electrode
  • the first electrode pad is n
  • the side electrode pads and the second electrode pads are referred to as p-side electrode pads.
  • FIG. 2 is a plan view of a horizontal semiconductor light emitting device according to a first embodiment of the present invention.
  • the light emitting device includes a light emitting region isolation trench 120 that penetrates the p-type nitride layer and the active layer to separate the light emitting region into a plurality of regions.
  • the trench 120 may further include a contact hole 110 formed to expose the n-type nitride layer through the p-type nitride layer and the active layer.
  • an n-side extension electrode 111 electrically connecting the n-type nitride layer exposed by the contact hole 110 to the inside of the contact hole, the p-type nitride layer and the light emitting region isolation trench 120 is included. do.
  • the emission region isolation trench 120 may be formed in a vertical direction of the n-side extension electrode 111.
  • the n-side extension electrode 111 may be electrically connected to the n-side electrode pad 112, and two or more contact holes 110 may be included in one n-side extension electrode 111.
  • the two or more contact holes 110 may be regularly spaced apart from each other, but the position at which the two or more contact holes 110 are formed is not particularly limited and may be arranged in various forms rather than in a straight line.
  • the p-side extension electrode 121 is electrically connected to the p-side electrode pad 122 positioned on a part of the upper portion of the p-type nitride layer to form the p-side electrode part.
  • the n-side extension electrode 111 is formed to be electrically insulated from the p-side extension electrode 121.
  • 3 and 4 illustrate cross-sectional views taken along the cutting lines A-A and B-B of FIG. 2 to explain more specific configurations.
  • a buffer layer 140, an n-type nitride layer 150, an active layer 160, and a p-type nitride layer 170 are stacked in an upper direction of the substrate 130. It is formed.
  • the substrate 130 may be made of a compound such as sapphire, SiC, Si, GaN, ZnO, GaAs, GaP, LiAl 2 O 3 , BN or AlN.
  • the buffer layer 140 may be selectively formed to solve the lattice mismatch between the substrate 130 and the n-type nitride layer 150, for example, may be formed of AlN or GaN.
  • the n-type nitride layer 150 is formed on the upper surface of the substrate 130 or the buffer layer 140, and is formed of nitride to which the n-type dopant is doped.
  • the n-type dopant silicon (Si), germanium (Ge), tin (Sn), or the like may be used.
  • the n-type nitride layer 150 is a laminated structure in which a first layer made of n-type AlGaN or undoped AlGaN doped with Si and a second layer made of n-type GaN doped with undoped or Si are formed. Can be.
  • n-type nitride layer 150 may be grown as a single n-type nitride layer, but may be formed as a laminated structure of the first layer and the second layer to act as a carrier limiting layer having good crystallinity without cracking. .
  • the active layer 160 may be formed of a single quantum well structure or a multi-quantum well structure between the n-type nitride layer 150 and the p-type nitride layer 170, and electrons flowing through the n-type nitride layer 150, p As holes flowing through the type nitride layer 170 are re-combined, light is generated.
  • the active layer 160 having a structure in which the quantum barrier layer and the quantum well layer are formed repeatedly may suppress spontaneous polarization due to stress and deformation generated.
  • the p-type nitride layer 170 is formed of a nitride doped with a p-type dopant.
  • a p-type dopant magnesium (Mg), zinc (Zn) or cadmium (Cd) may be used.
  • the p-type nitride layer may be formed by alternately stacking a first layer made of p-type AlGaN or undoped AlGaN doped with Mg, and a second layer made of p-type GaN doped with undoped or Mg. have.
  • the p-type nitride layer 170 may be grown as a single-layer p-type nitride layer similarly to the n-type nitride layer 150, but may be formed as a laminated structure to act as a carrier-limiting layer having good crystallinity without cracks. have.
  • the contact hole 110 is formed through the p-type nitride layer 170 and the active layer 160 to expose the n-type nitride layer 150.
  • the p-type nitride layer 170 and the active layer 160 are etched to form a light emitting region isolation trench 120.
  • the contact hole 110 and the trench 120 may be formed through a photoresist or the like.
  • a photoresist as a pattern mask
  • photo-lithography, e-beam lithography, and ion beam lithography Ion-beam Lithography, Extreme Ultraviolet Lithography, Proximity X-ray Lithography, or Nano imprint lithography, etc.
  • the dry or wet etching may be used.
  • n-contact layer 151 may be further included on the n-type nitride layer 150 exposed by the contact hole 110.
  • the n-contact layer 151 is ohmic contacted to the n-type nitride 150 to lower the contact resistance.
  • the n-contact layer 151 may be made of a transparent conductive oxide, and the material may include elements such as In, Sn, Al, Zn, Ga, and the like, for example, of ITO, CIO, ZnO, NiO, and In 2 O 3 . It can be formed of either.
  • an insulating layer 180 is formed on the sidewalls of the contact holes 110 to separate the sidewalls of the contact holes 110 from the n-side extension electrode 111 and are exposed by the contact holes 110. Part of the form nitride layer is exposed.
  • the insulating layer 180 extends over the p-type nitride 170 to separate the p-type nitride layer 170 from the n-side extension electrode 111, and extends over the trench 120 to form a trench.
  • the area 120 is spaced apart from the n-side extension electrode 111.
  • the insulating layer 180 may be formed of silicon oxide or silicon nitride, and may be formed by a plasma enhanced chemical vapor deposition (PECVD) method, a sputtering method, a MOCVD method, or an e-beam evaporation method.
  • PECVD plasma enhanced chemical vapor deposition
  • the n-side extension electrode 111 is formed in the contact hole 110, on the p-type nitride layer 170, and on the trench 120 to electrically n-type nitride layer exposed by the contact hole 110. It serves to connect, it may be made of a material capable of electrical connection, such as metal, alloy or metal oxide.
  • n-side extension electrode 111 is electrically connected to the n-side electrode pad 112 present on the insulating layer 180.
  • a p-contact layer 171 may be formed below the p-side extension electrode 121 formed to be spaced apart from the n-side extension electrode 111, and the p-contact layer 171 may be a p-type nitride 170. Ohmic contact reduces contact resistance.
  • the p-contact layer 171 may be made of a transparent conductive oxide, and the material may include elements such as In, Sn, Al, Zn, Ga, and the like, for example, of ITO, CIO, ZnO, NiO, and In 2 O 3 . It can be formed of either.
  • the buffer layer 140, the n-type nitride layer 150, the active layer 160, and the p-type nitride layer 170 are disposed below the p-side extension electrode 121 in the upper direction of the substrate 130.
  • p-contact layer 171 are sequentially formed, and a trench 120 region where the active layer 160 and the p-type nitride layer 170 are etched is also formed, and the p-side extension electrode 121 is a p-side electrode. It is electrically connected to the pad 122.
  • the trench 120 is electrically insulated from the p-side extension electrode 121 by the insulating layer 180. As shown in FIG.
  • the insulating layer 180 which separates the p-contact layer 171 from the sidewalls and the bottom surface of the trench 120 includes the sidewalls of the n-side extension electrode 111 and the contact hole 110 and p.
  • the nitride layer 170 may be formed to be connected to or separated from the insulating layer 180 spaced apart from each other.
  • the cross section of the contact hole 110 may be formed as a circle, but is not limited to this, it may be formed in the form of a triangle, a square or other polygons.
  • the diameter of the cross section of the contact hole 110 may be formed in the range of 1 to 200 ⁇ m, preferably 5 to 150 ⁇ m, and when two or more contact holes are formed, the size of the cross sections may be all the same or different. have.
  • the distance between the neighboring contact holes 110 in the one n-side extension electrode 111 may vary depending on the cross-sectional area of the entire light emitting device, but preferably between the neighboring contact holes 110 in the one n-side extension electrode. The distance is adjusted to be within the range of 10 to 500 ⁇ m, more preferably 50 to 400 ⁇ m.
  • the width of the light emitting region separation trench 120 is preferably formed in the range of 0.5 to 20 ⁇ m, preferably 3 to 10 ⁇ m.
  • the width of the n-side extension electrode 111 may be adjusted within the range of 1 to 100 ⁇ m, preferably 5 to 50 ⁇ m, but is not limited thereto.
  • the width of the n-side extension electrode 111 may be maintained while being constant, but as the distance from the n-side electrode pad 112 increases, the width of the n-side extension electrode 111 connecting the contact holes is increased.
  • the width of the n-side extension electrode 111 connecting the contact hole may increase as the distance from the n-side electrode pad 112 increases in the one n-side extension electrode.
  • One or two or more n-side extension electrodes 111 may be electrically connected to the n-side electrode pad 112, and at least one contact hole may be formed in each of the n-side extension electrodes.
  • the n-side extension electrode 111 may be formed to have one or more bending points as well as a straight shape having no bending points.
  • One or more p-side extension electrodes 121 may also be electrically connected to the p-side electrode pad 122.
  • opposite ends that are not connected to the p-side electrode pad 122 are generally formed to be spaced apart from each other, but the ends may be connected to each other to form a closed figure. .
  • the n-side extension electrode 111 may be spaced apart by an insulating layer.
  • the light emitting regions of the semiconductor light emitting device of the present invention may be divided into a plurality of by the trench 120. As shown in FIG. 2, when two trenches 120 are formed, the light emitting regions are divided into three regions. do. As the trench 120 regions are formed between the plurality of contact holes 110, each light emitting region may include one or more contact holes 110.
  • the number of light emitting regions separated by the trench in one device is not particularly limited, but is preferably separated into 3 to 5 regions, and the light emitting regions are formed at equal intervals so that the areas of the light emitting regions are uniform. desirable.
  • the respective light emitting regions may have the same effect as if the individual elements are connected in parallel by the n-side extension electrode 111 and the p-side extension electrode 121, and the plurality of contact holes Current dispersion effect can be expected and brightness can be increased by improving current density.
  • GaN was applied as a nitride layer of a nitride light emitting device to a sapphire substrate, and a general Au-based electrode was applied as an extension electrode to obtain a light emitting device.
  • a light emitting device was manufactured by stacking the same nitride-based component as in Example on a sapphire substrate, but having a plan view as illustrated in FIG. 5.
  • the light emitting device of the embodiment was improved by about 3.1% or more light output compared to the comparative example, it was confirmed that the light emitting device of the embodiment can exhibit excellent light output characteristics.

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Abstract

La présente invention porte sur un élément émetteur de lumière à semi-conducteurs comprenant une tranchée de séparation de régions émettrices de lumière et une structure de trou de contact. Un élément émetteur de lumière à semi-conducteurs, selon la présente invention, peut élargir une zone émettrice de lumière efficace par dispersion équitablement d'un courant circulant à travers une couche de semi-conducteur. De plus, selon la séparation de chaque région émettrice de lumière par une tranchée de séparation de régions émettrices de lumière, un effet peut être obtenu de telle sorte que des éléments individuels sont connectés en parallèle, et l'amélioration de l'efficacité optique peut également être espérée.
PCT/KR2013/009208 2012-10-18 2013-10-15 Elément émetteur de lumière à semi-conducteurs à luminosité élevée ayant une tranchée de séparation de régions émettrices de lumière et un excellent effet de dispersion de courant WO2014061971A1 (fr)

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KR1020120116242A KR101552670B1 (ko) 2012-10-18 2012-10-18 발광 영역 분리 트렌치를 갖는 전류 분산 효과가 우수한 고휘도 반도체 발광소자
KR10-2012-0116242 2012-10-18

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CN104659169A (zh) * 2015-02-15 2015-05-27 映瑞光电科技(上海)有限公司 一种简易倒装led及其制作方法
CN107579140A (zh) * 2014-08-28 2018-01-12 首尔伟傲世有限公司 发光二极管
US10090440B1 (en) 2017-05-05 2018-10-02 Epistar Corporation Light-emitting device and method of manufacturing thereof
CN110911537A (zh) * 2019-11-29 2020-03-24 东莞市中晶半导体科技有限公司 共阴极led芯片及其制作方法
CN111987209A (zh) * 2015-11-18 2020-11-24 晶元光电股份有限公司 发光元件

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TWI557943B (zh) * 2014-11-18 2016-11-11 錼創科技股份有限公司 發光元件的電極結構
US9620678B2 (en) 2014-11-18 2017-04-11 PlayNitride Inc. Electrode structure of light emitting device
CN108140699B (zh) * 2015-09-25 2020-09-25 Lg伊诺特有限公司 发光器件，发光元件封装和照明装置
WO2020009504A1 (fr) * 2018-07-04 2020-01-09 엘지이노텍 주식회사 Dispositif à semi-conducteur et son procédé de fabrication
KR102572340B1 (ko) 2018-08-21 2023-08-31 삼성디스플레이 주식회사 표시 장치 및 표시 장치 제조 방법
CN109616562A (zh) * 2018-11-13 2019-04-12 厦门乾照光电股份有限公司 Led发光芯片

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Cited By (8)

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CN107579140A (zh) * 2014-08-28 2018-01-12 首尔伟傲世有限公司 发光二极管
CN104659169A (zh) * 2015-02-15 2015-05-27 映瑞光电科技(上海)有限公司 一种简易倒装led及其制作方法
CN111987209A (zh) * 2015-11-18 2020-11-24 晶元光电股份有限公司 发光元件
CN111987208A (zh) * 2015-11-18 2020-11-24 晶元光电股份有限公司 发光元件
CN111987208B (zh) * 2015-11-18 2023-07-04 晶元光电股份有限公司 发光元件
US10090440B1 (en) 2017-05-05 2018-10-02 Epistar Corporation Light-emitting device and method of manufacturing thereof
CN110911537A (zh) * 2019-11-29 2020-03-24 东莞市中晶半导体科技有限公司 共阴极led芯片及其制作方法
CN110911537B (zh) * 2019-11-29 2021-12-28 东莞市中晶半导体科技有限公司 共阴极led芯片及其制作方法

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