TW201417338A - 半導體發光元件 - Google Patents
半導體發光元件 Download PDFInfo
- Publication number
- TW201417338A TW201417338A TW102137805A TW102137805A TW201417338A TW 201417338 A TW201417338 A TW 201417338A TW 102137805 A TW102137805 A TW 102137805A TW 102137805 A TW102137805 A TW 102137805A TW 201417338 A TW201417338 A TW 201417338A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- extension electrode
- emitting device
- trench
- semiconductor layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 238000009792 diffusion process Methods 0.000 claims description 16
- 238000010292 electrical insulation Methods 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 238000000926 separation method Methods 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 127
- 150000004767 nitrides Chemical class 0.000 description 64
- 239000000758 substrate Substances 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910010199 LiAl Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- -1 hafnium nitride Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120116242A KR101552670B1 (ko) | 2012-10-18 | 2012-10-18 | 발광 영역 분리 트렌치를 갖는 전류 분산 효과가 우수한 고휘도 반도체 발광소자 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201417338A true TW201417338A (zh) | 2014-05-01 |
Family
ID=50488473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102137805A TW201417338A (zh) | 2012-10-18 | 2013-10-18 | 半導體發光元件 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101552670B1 (fr) |
| TW (1) | TW201417338A (fr) |
| WO (1) | WO2014061971A1 (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI557943B (zh) * | 2014-11-18 | 2016-11-11 | 錼創科技股份有限公司 | 發光元件的電極結構 |
| US9620678B2 (en) | 2014-11-18 | 2017-04-11 | PlayNitride Inc. | Electrode structure of light emitting device |
| CN109616562A (zh) * | 2018-11-13 | 2019-04-12 | 厦门乾照光电股份有限公司 | Led发光芯片 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016018109A1 (fr) | 2014-07-31 | 2016-02-04 | 서울바이오시스 주식회사 | Diode électroluminescente |
| KR20160027875A (ko) * | 2014-08-28 | 2016-03-10 | 서울바이오시스 주식회사 | 발광소자 |
| CN104659169A (zh) * | 2015-02-15 | 2015-05-27 | 映瑞光电科技(上海)有限公司 | 一种简易倒装led及其制作方法 |
| CN108140699B (zh) * | 2015-09-25 | 2020-09-25 | Lg伊诺特有限公司 | 发光器件，发光元件封装和照明装置 |
| CN111987208B (zh) * | 2015-11-18 | 2023-07-04 | 晶元光电股份有限公司 | 发光元件 |
| US10090440B1 (en) | 2017-05-05 | 2018-10-02 | Epistar Corporation | Light-emitting device and method of manufacturing thereof |
| US20210167252A1 (en) * | 2018-07-04 | 2021-06-03 | Lg Innotek Co., Ltd. | Semiconductor device and manufacturing method therefor |
| KR102572340B1 (ko) | 2018-08-21 | 2023-08-31 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치 제조 방법 |
| CN110911537B (zh) * | 2019-11-29 | 2021-12-28 | 东莞市中晶半导体科技有限公司 | 共阴极led芯片及其制作方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4353232B2 (ja) * | 2006-10-24 | 2009-10-28 | ソニー株式会社 | 発光素子 |
| KR100849826B1 (ko) * | 2007-03-29 | 2008-07-31 | 삼성전기주식회사 | 발광소자 및 이를 포함하는 패키지 |
| KR101711960B1 (ko) * | 2010-07-01 | 2017-03-06 | 삼성전자주식회사 | 반도체 발광장치 |
| JP2012074665A (ja) * | 2010-09-01 | 2012-04-12 | Hitachi Cable Ltd | 発光ダイオード |
| KR101087970B1 (ko) * | 2010-10-25 | 2011-12-01 | 주식회사 세미콘라이트 | 반도체 발광소자 |
-
2012
- 2012-10-18 KR KR1020120116242A patent/KR101552670B1/ko not_active IP Right Cessation
-
2013
- 2013-10-15 WO PCT/KR2013/009208 patent/WO2014061971A1/fr active Application Filing
- 2013-10-18 TW TW102137805A patent/TW201417338A/zh unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI557943B (zh) * | 2014-11-18 | 2016-11-11 | 錼創科技股份有限公司 | 發光元件的電極結構 |
| US9620678B2 (en) | 2014-11-18 | 2017-04-11 | PlayNitride Inc. | Electrode structure of light emitting device |
| CN109616562A (zh) * | 2018-11-13 | 2019-04-12 | 厦门乾照光电股份有限公司 | Led发光芯片 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140049877A (ko) | 2014-04-28 |
| WO2014061971A1 (fr) | 2014-04-24 |
| KR101552670B1 (ko) | 2015-09-11 |
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