WO2013129812A1 - Diode électroluminescente à substrat de nitrure de gallium - Google Patents

Diode électroluminescente à substrat de nitrure de gallium Download PDF

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WO2013129812A1
WO2013129812A1 PCT/KR2013/001503 KR2013001503W WO2013129812A1 WO 2013129812 A1 WO2013129812 A1 WO 2013129812A1 KR 2013001503 W KR2013001503 W KR 2013001503W WO 2013129812 A1 WO2013129812 A1 WO 2013129812A1
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layer
gallium nitride
light emitting
emitting diode
contact layer
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PCT/KR2013/001503
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English (en)
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Jin Woong Lee
Yeo Jin Yoon
Tae Gyun Kim
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Seoul Opto Device Co., Ltd.
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Publication of WO2013129812A1 publication Critical patent/WO2013129812A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Definitions

  • the present invention relates to a light emitting diode, and more particularly, to a light emitting diode having a gallium nitride substrate.
  • group-III nitrides such as gallium nitrides (GaN) have attracted attention as materials for light emitting diodes for emitting light in visible and ultraviolet region of the spectrum due to their excellent thermal stability and direct transition type energy band structure.
  • GaN gallium nitrides
  • blue and green light emitting diodes using indium gallium nitride (InGaN) have been used in a wide range of fields, such as large natural color flat display devices, signal lights, indoor lighting, high density light sources, high resolution output systems, optical communications, and the like.
  • a group-III nitride semiconductor layer is generally grown on a heterogeneous substrate having a similar crystal structure through metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
  • MOCVD metal-organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • a sapphire substrate having a hexagonal crystal system structure is mainly used.
  • an epitaxial layer grown on the heterogeneous substrate has a relatively high dislocation density due to lattice mismatch and difference in heat expansion coefficient between the epitaxial layer and the growth substrate, thereby providing a limit in improvement in luminous efficacy of a light emitting diode.
  • a novel technology has been studied to produce a gallium nitride light emitting diode using a gallium nitride substrate as a growth substrate. Since the gallium nitride substrate and an epitaxial layer grown thereon are homogeneous layers, the gallium nitride substrate can improve luminous efficacy of the light emitting diode by reducing crystal defects in the epitaxial layer.
  • a certain pattern is formed on the growth substrate as in a patterned sapphire substrate (PSS) to enhance light extraction efficiency of the light emitting diode.
  • PSS patterned sapphire substrate
  • the gallium nitride substrate is the same kind of material as the epitaxial layer grown thereon, the epitaxial layer and the substrate have substantially the same index of refraction.
  • the pattern is formed on the gallium nitride substrate, there is no difference in index of refraction between the substrate and the epitaxial layer, and the pattern does not cause scattering or refraction of light. Accordingly, light generated in an active layer reaches a bottom surface of the substrate through the gallium nitride substrate having a relatively large thickness of about 300 um, thereby causing substantial loss of light in the gallium nitride substrate.
  • Exemplary embodiments of the present invention provide a light emitting diode having improved light extraction efficiency.
  • Exemplary embodiments of the present invention provide a light emitting diode which has reduced dislocation density to allow high current operation.
  • Exemplary embodiments of the present invention provide a light emitting diode which can reduce forward voltage.
  • a light emitting diode includes: a gallium nitride substrate; a first gallium nitride-based contact layer placed on the gallium nitride substrate; a second gallium nitride-based contact layer placed on the first contact layer; an active layer of a multi-quantum well structure placed between the first contact layer and the second contact layer; and a pattern of a dielectric material placed between the gallium nitride substrate and the first contact layer.
  • the pattern of the dielectric material is formed of nanoparticles.
  • the nanoparticles may have a lower index of refraction than the gallium nitride substrate, and for example, the nanoparticles may be nano-scale silica particles. In addition, the nanoparticles may be porous or hollow nanoparticles.
  • the pattern of the dielectric material may be a stripe, island or mesh pattern. Further, the pattern of the dielectric material may be placed within a concave portion formed on the gallium nitride substrate.
  • the light emitting diode may further include a multilayered superlattice layer placed between the first contact layer and the active layer.
  • the multilayered superlattice layer may have a structure in which an InGaN layer, an AlGaN layer and a GaN layer are repeatedly stacked one above another in a plurality of periods.
  • the multilayered superlattice layer may further include a GaN layer between the InGaN layer and the AlGaN layer in each cycle.
  • the active layer of the multi-quantum well structure includes (n-1) barrier layers between a first well layer placed closest to the n-type contact layer and an n-th (n>2) well layer placed closest to the p-type contact layer, and among the (n-1) barrier layers, barrier layers having a higher thickness than an average thickness of the barrier layers may be placed closer to the first well layer than the other barrier layers, and barrier layers having a lower thickness than the average thickness of the barrier layers may be placed closer to the n-th well layer than the other barrier layers.
  • the number of barrier layers having a greater thickness than the average thickness of the barrier layers may be greater than the number of barrier layers having a smaller thickness than the average thickness of the barrier layers.
  • the light emitting diode may further include a lower GaN layer placed between the substrate and the n-type contact layer, and an intermediate layer placed between the n-type contact layer and the lower GaN layer.
  • the intermediate layer may be formed of an AlInN layer or an AlGaN layer.
  • the pattern of the dielectric material may be placed between the gallium nitride substrate and the lower GaN layer.
  • a method of manufacturing a light emitting diode includes: forming a convex portion and a concave portion by patterning an upper surface of a gallium nitride substrate, filling the concave portion with nanoparticles to form a pattern of a dielectric material, and growing gallium nitride-based semiconductor layers on the convex portion and the pattern of the dielectric material.
  • the concave portion may be formed in a stripe, mesh or island shape.
  • the pattern of the dielectric material may be formed along the shape of the concave portion to form a stripe, mesh or island pattern.
  • the nanoparticles may fill the concave portion to have a height coplanar with or lower than an upper surface of the convex portion.
  • the light emitting diode has a pattern of a dielectric material placed between a gallium nitride substrate and a first contact layer to refract or scatter light, thereby reducing optical loss by the gallium nitride substrate while improving light extraction efficiency.
  • gallium nitride-based semiconductor layers are grown on the gallium nitride substrate as a growth substrate using a lateral growth technology, thereby lowering dislocation density in a semiconductor laminate structure.
  • a superlattice layer is placed between the first contact layer and the active layer, thereby further preventing crystal defects from occurring in the active layer. Accordingly, the light emitting diode according to the embodiments may have significantly improved luminous efficacy and reduced dislocation density, thereby enabling operation under high current.
  • the superlattice layer has the structure wherein the InGaN layer, the AlGaN layer and the GaN layer are repeatedly stacked one above another in a plurality of periods, whereby electrons can be efficiently injected into the active layer, with holes trapped in the active layer. As a result, it is possible to improve luminous efficacy without increasing operation voltage.
  • barrier layers are placed near the p-type contact layer, thereby enabling reduction in forward voltage without reducing luminous efficacy.
  • the light emitting diode according to the embodiments includes an intermediate layer, thereby further reducing crystal defects in the light emitting diode.
  • FIG. 1 is a sectional view of a light emitting diode in accordance with one embodiment of the present invention
  • FIG. 2 and FIG. 3 are schematic sectional views of the light emitting diode of FIG. 1;
  • FIG. 4 is a sectional view of a superlattice layer in accordance with one embodiment of the present invention.
  • FIG. 5 is a sectional view of a superlattice layer in accordance with another embodiment of the present invention.
  • FIG. 6 is a sectional view of an active layer in accordance with one exemplary embodiment of the present invention.
  • FIG. 7 is an energy-band diagram of the active layer of FIG. 5.
  • FIG. 1 is a sectional view of a light emitting diode in accordance with one embodiment of the present invention.
  • the light emitting diode includes a gallium nitride substrate 11, a pattern of a dielectric material 13, an n-type contact layer 19, an active layer 30, and a p-type contact layer 43.
  • the light emitting diode may include a lower GaN layer 15, an intermediate layer 17, a superlattice layer 20, a p-type clad layer 41, a transparent electrode layer 45, a first electrode 47, and a second electrode 49.
  • the gallium nitride substrate 11 is a patterned substrate having a convex portion 11a on an upper surface thereof.
  • the gallium nitride substrate 11 may be prepared by, for example, HVPE.
  • the gallium nitride substrate 11 may be subjected to patterning by wet or dry etching, whereby the convex portion 11a and a concave portion 11b are formed on the upper surface of the substrate.
  • the concave portion 11b may be formed in a stripe, mesh or island shape.
  • the convex portion 11a may also be formed in a stripe or mesh shape, or may be constituted by plural islands arranged therein.
  • the convex portion 11a provides a growth plane for growing a gallium nitride semiconductor layer.
  • the convex portion 11a may have a flat upper surface.
  • the pattern of the dielectric material 13 is formed on the gallium nitride substrate 11.
  • the pattern of the dielectric material 13 may be formed of nanoparticles.
  • the pattern of the dielectric material 13 fills the concave portion 11b of the gallium nitride substrate 11.
  • Such a pattern of the dielectric material 13 may be formed by dispersing nanoparticles in an organic solvent or in water, and depositing the dispersant of the nanoparticles on the gallium nitride substrate 11 having the convex portion 11a and the concave portion 11b. The organic solvent or water is removed through evaporation or the like after deposition of the nanoparticles.
  • the nanoparticles may be, for example, nano-scale spherical silica particles. Nano particles having a relatively low index of refraction, particularly, nano-scale silica particles having an index of refraction of about 1.46, may be used to improve light extraction efficiency by allowing the nanoparticles to scatter light passing through the n-type contact layer 19 toward the gallium nitride substrate 11. Further, air having an index of refraction of 1 is present between the nanoparticles, so that the light can be more efficiently scattered by the nanoparticles. Furthermore, the nanoparticles may be porous or hollow nanoparticles. Accordingly, the nanoparticles may have a low index of refraction of less than 1.46 and thus can more efficiently scatter light.
  • the pattern of the dielectric material 13 may be formed along the shape of the concave portion 11b of the gallium nitride substrate 11, and thus may be formed in a stripe, island or mesh pattern.
  • the lower GaN layer 15 may be placed on the convex portion 11a and the pattern of a dielectric material 13.
  • the lower GaN layer 15 may be formed of undoped GaN or Si-doped GaN.
  • the lower GaN layer 15 is formed to cover the convex portion 11a and the pattern of the dielectric material 13 by a lateral growth technology.
  • a buffer layer (not shown) may be further formed before growing the lower GaN layer 15.
  • the intermediate layer 17 may be placed on the lower GaN layer 15.
  • the intermediate layer 17 is formed of a gallium nitride epitaxial layer having a different composition than that of the gallium nitride substrate 11, and has a wider band gap than well layers of the multi-quantum well structure.
  • the intermediate layer 17 may be formed of AlInN, AlGaN or AlInGaN.
  • the n-type contact layer 19 and the lower GaN layer 15 are grown at high temperatures of about 1000°C, and the intermediate layer 17 is grown at temperatures ranging from about 800°C to about 900°C.
  • strain can be induced in the n-type contact layer 19 formed on the intermediate layer 17, thereby enabling improvement of crystal quality of the multi-quantum well structure.
  • the n-type contact layer 19 may be formed of Si-doped GaN.
  • the n-type contact layer 19 may be grown on the intermediate layer 17, but is not limited thereto.
  • the n-type contact layer 19 may be directly grown on the gallium nitride substrate 11 having the pattern of the dielectric material 13 thereon.
  • the first electrode 47 is in ohmic contact with an upper side of the n-type contact layer 19.
  • the multilayered superlattice layer 20 may be placed on the n-type contact layer 19.
  • the superlattice layer 20 is formed between the n-type contact layer 19 and the active layer 30 and is thus placed on a current path.
  • the superlattice layer 20 may be formed by repeatedly stacking pairs of InGaN/GaN in a plurality of periods (for example, 15 to 20 periods), without being limited thereto.
  • the superlattice layer 20 may have a laminate structure wherein tri-layer structures of InGaN layer 21/AlGaN layer 22/GaN layer 23 are repeatedly stacked one above another in plural periods (for example, about 10 to 20 periods).
  • the AlGaN layer 22 and the InGaN layer 21 may be stacked in a different order.
  • the InGaN layer 21 has a wider band gap than the well layer in the active layer 30.
  • the AlGaN layer 22 may have a wider band gap than the barrier layer in the active layer 30.
  • the InGaN layer 21 and the AlGaN layer 22 may be undoped layers to which impurities are not doped, and the GaN layer 23 may be a Si-doped layer.
  • the uppermost layer of the superlattice layer 20 may be a GaN layer 23 to which impurities are doped.
  • the AlGaN layer 22 is included in the superlattice layer 20, it is possible to prevent holes from moving from the active layer 30 towards the n-type contact layer 19, whereby a recombination rate between holes and electrons in the active layer 30 can be improved.
  • the AlGaN layer 22 may be formed to a thickness of less than 1 nm.
  • a GaN layer 24 may be inserted between the InGaN layer 21 and the AlGaN layer 22, as shown in FIG. 5.
  • the GaN layer 24 may be an undoped layer or a Si-doped layer.
  • the active layer of the multi-quantum well structure 30 is placed on the superlattice layer 20.
  • the active layer 30 has a laminate structure in which barrier layers 31a, 31b and well layers 33n, 33, 33p are alternately stacked one above another.
  • 33n denotes a well layer (first well layer) which is closest to the superlattice layer 20 or the n-type contact layer 19
  • 33p denotes a well layer (n-th well layer) which is placed closes to the p-type clad layer 41 or the p-type contact layer 23.
  • FIG. 7 is an energy band diagram of the active layer 30.
  • plural (n-1) barrier layers 31a, 31b and plural (n-2) well layers 33 are alternately stacked between the well layers 33n, 33p.
  • the barrier layers 31a have a greater thickness than an average thickness of the (n-1) barrier layers 31a, 31b, and the barrier layers 31b have a smaller thickness than the average thickness of the (n-1) barrier layers 31a, 31b.
  • the barrier layers 31a are placed closer to the first well layer 33n and the barrier layers 31b are placed closer to the n-th well layer 33p.
  • the barrier layer 31a may adjoin the uppermost layer of the superlattice layer 20.
  • the barrier layer 31a may be placed between the superlattice layer 20 and the first well layer 33n.
  • the barrier layer 35 may be placed on the n-th well layer 33p.
  • the barrier layers 35 may have a greater thickness than the barrier layers 31a.
  • the barrier layers 31b closer to the n-th well layer 33p are formed to a relatively low thickness, a resistant component can be reduced in the active layer 30, and holes injected from the p-type contact layer 43 can be distributed to the well layers 33 in the active layer 30, thereby achieving reduction in forward voltage of the light emitting diode.
  • the barrier layers 35 are formed to a relatively high thickness, crystal defects created during growth of the active layer 30, particularly, during growth of the well layers 33n, 33, 33p, can be relieved, thereby improving crystal quality of the epitaxial layer formed thereon.
  • the number of barrier layers 31a is greater than the number of barrier layers 31b, the active layer 30 can suffer increased defect density causing deterioration of luminous efficacy.
  • the number of barrier layers 31a is greater than the number of barrier layers 31b.
  • the well layers 33n, 33, 33p may have substantially the same thickness, whereby the light emitting diode can emit light having a very small full width at half maximum.
  • the well layers 33n, 33, 33p may be formed to different thicknesses, whereby the light emitting diode can emit light having a relatively wide full width at half maximum.
  • the well layer 33 placed between the barrier layers 31a may be formed to a smaller thickness than the well layer 33 placed between the barrier layers 31b, thereby preventing generation of crystal defects.
  • the well layers 33n, 33, 33p may have a thickness ranging from 10 ⁇ to 30 ⁇
  • the barrier layers 31a may have a thickness ranging from 50 ⁇ to 70 ⁇
  • the barrier layers 31b may have a thickness ranging from 30 ⁇ to 50 ⁇ .
  • the well layers 33n, 33, 33p may be formed of gallium nitride layers which emit light in wavelength bands of near-ultraviolet or blue light.
  • the well layers 33n, 33, 33p may be formed of InGaN and the In content thereof may be regulated according to desired wavelengths.
  • the barrier layers 31a, 31b are formed of gallium nitride-based layers which have a wider band gap than the well layers 33n, 33, 33p in order to trap electrons and holes within the well layers 33n, 33, 33p.
  • the barrier layers 31a, 31b may be formed of GaN, AlGaN or AlInGaN.
  • the barrier layers 31a, 31b may be formed of Al-containing gallium nitride-based layers to further increase the band gap.
  • the content ratio of Al is preferably greater than 0 and less than 0.1, particularly in the range of 0.02 to 0.05. Within this range of the Al content, it is possible to increase light output.
  • cap layers may be formed between the respective well layers 33n, 33, 33p and between the barrier layers 31a, 31b thereon.
  • the cap layers are formed to prevent damage to the well layers while the temperature of a chamber is increased to grow the barrier layers 31a, 31b.
  • the well layers 33n, 33, 33p may be grown at about 780°C and the barrier layers 31a, 31b may be grown at about 800°C.
  • the p-type clad layer 41 may be placed on the active layer 30 and formed of AlGaN. Alternatively, the p-type clad layer 41 may have a superlattice structure wherein InGaN/AlGaN layers are repeatedly stacked one above another.
  • the p-type clad layer 41 is an electron blocking layer which blocks electrons from moving towards the p-type contact layer 43, thereby improving luminous efficacy.
  • the p-type contact layer 43 may be formed of Mg-doped GaN.
  • the p-type contact layer 43 is placed on the p-type clad layer 41.
  • a transparent conductive layer 45 such as ITO or ZnO may be formed on the p-type contact layer 43 to have an ohmic contact with the p-type contact layer 43.
  • the second electrode 49 is electrically connected to the p-type contact layer 43.
  • the second electrode 49 may be connected to the p-type contact layer 43 through the transparent conductive layer 45.
  • the p-type contact layer 43, p-type clad layer 41, active layer 30 and superlattice layer 20 may be partially removed by etching to expose the n-type contact layer 19.
  • the first electrode 47 is formed on an exposed region of the n-type contact layer 19.
  • epitaxial layers 15 ⁇ 43 grown on the gallium nitride substrate 11 may be formed by MOCVD.
  • TMAl, TMGa and TMIn may be used as sources of Al, Ga and In, respectively, and NH 3 may be used as a source of N.
  • SiH4 may be used as a source of Si which is an n-type impurity
  • Cp 2 Mg may be used as a source of Mg which is a p-type impurity.

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Abstract

L'invention concerne une diode électroluminescente. La diode électroluminescente comprend un substrat de nitrure de gallium, une première couche de contact à base de nitrure de gallium placée sur le substrat de nitrure de gallium, une seconde couche de contact à base de nitrure de gallium placée sur la première couche de contact, une couche active d'une structure à multiples puits quantiques placée entre la première couche de contact et la seconde couche de contact, et un motif d'un matériau diélectrique placé entre le substrat de nitrure de gallium et la première couche de contact. Le matériau diélectrique a un indice de réfraction différent de celui du substrat de nitrure de gallium. En résultat, la diode électroluminescente peut changer un trajet optique par réfraction ou diffusion par le motif du matériau diélectrique, améliorant ainsi l'efficacité d'extraction lumineuse.
PCT/KR2013/001503 2012-02-29 2013-02-26 Diode électroluminescente à substrat de nitrure de gallium WO2013129812A1 (fr)

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US9337391B2 (en) 2014-08-11 2016-05-10 Samsung Electronics Co., Ltd. Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same
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JP2011187621A (ja) * 2010-03-08 2011-09-22 Nichia Corp 窒化物系半導体発光素子

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JP2017517152A (ja) * 2014-05-30 2017-06-22 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． パターン付けされた基板を有する発光デバイス
US9337391B2 (en) 2014-08-11 2016-05-10 Samsung Electronics Co., Ltd. Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same
DE102016112294A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge
US10840411B2 (en) 2016-07-05 2020-11-17 Osram Oled Gmbh Semiconductor layer sequence
CN114141919A (zh) * 2021-11-29 2022-03-04 江苏第三代半导体研究院有限公司 半导体衬底及其制备方法、半导体器件及其制备方法
CN114141919B (zh) * 2021-11-29 2023-10-20 江苏第三代半导体研究院有限公司 半导体衬底及其制备方法、半导体器件及其制备方法

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