WO2013147453A1 - Diode électroluminescente à base de nitrure de gallium - Google Patents

Diode électroluminescente à base de nitrure de gallium Download PDF

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WO2013147453A1
WO2013147453A1 PCT/KR2013/002320 KR2013002320W WO2013147453A1 WO 2013147453 A1 WO2013147453 A1 WO 2013147453A1 KR 2013002320 W KR2013002320 W KR 2013002320W WO 2013147453 A1 WO2013147453 A1 WO 2013147453A1
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layer
semiconductor layer
gallium nitride
emitting diode
light emitting
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PCT/KR2013/002320
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English (en)
Korean (ko)
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최승규
김재헌
정정환
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서울옵토디바이스주식회사
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Publication of WO2013147453A1 publication Critical patent/WO2013147453A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Definitions

  • the present invention relates to a gallium nitride based light emitting diode, and more particularly to a gallium nitride based light emitting diode using a gallium nitride substrate as a growth substrate.
  • nitrides of group III elements such as gallium nitride (GaN)
  • GaN gallium nitride
  • InGaN indium gallium nitride
  • Such a nitride semiconductor layer of Group III elements is difficult to fabricate homogeneous substrates capable of growing them, and therefore, such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), etc., on heterogeneous substrates having a similar crystal structure. It has been grown through the process of.
  • a hetero substrate a sapphire substrate having a hexagonal structure is mainly used.
  • epitaxial layers grown on dissimilar substrates have a relatively high dislocation density due to lattice mismatch with the growth substrate and differences in coefficient of thermal expansion.
  • Epilayers grown on sapphire substrates are generally known to have dislocation densities of at least 1E8 / cm 2.
  • the epitaxial layer having such a high dislocation density has a limit in improving the luminous efficiency of the light emitting diode.
  • the luminous efficiency is further reduced compared to when operating at a low current.
  • the lattice mismatch and thermal expansion coefficient difference between the epi layer and the growth substrate limits the thickness of the epi layer grown on the sapphire substrate.
  • the thickness of the n-type contact layer grown on the sapphire substrate is generally in the range of 1 to 2um.
  • the thickness limitation of the n-type contact layer increases the resistance of the light emitting diode and thus the forward voltage.
  • the problem to be solved by the present invention is to provide a light emitting diode having an improved luminous efficiency.
  • Another object of the present invention is to provide a light emitting diode capable of driving under high current.
  • Another object of the present invention is to provide a light emitting diode that can lower the forward voltage.
  • a light emitting diode a gallium nitride substrate; A gallium nitride based first semiconductor layer on the gallium nitride substrate; A gallium nitride based second semiconductor layer positioned on the first semiconductor layer; An active layer having a multi-quantum well structure positioned between the first semiconductor layer and the second semiconductor layer; And a gallium nitride based electronic block layer positioned between the active layer and the second semiconductor layer.
  • the first semiconductor layer has a thickness in the range of 5um to 15um
  • the electron block layer is a quaternary gallium nitride based semiconductor layer containing aluminum and indium.
  • the electron block layer may be formed of a four-component gallium nitride based semiconductor layer to form a thicker thickness of the first semiconductor layer.
  • the first semiconductor layer is formed of a single GaN layer.
  • the first semiconductor layer may be an n-type contact layer.
  • the light emitting diode may further include a first electrode contacting the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer.
  • the semiconductor device may further include a superlattice layer having a multilayer structure positioned between the first semiconductor layer and the active layer.
  • the superlattice layer may have a structure in which an InGaN layer, an AlGaN layer, and a GaN layer are repeatedly stacked in a plurality of cycles.
  • the superlattice layer of the multilayer structure may further include a GaN layer between the InGaN layer and the AlGaN layer in each period.
  • the active layer includes a barrier layer and a well layer, and the well layer is formed of InGaN.
  • the barrier layers in the active layer may be formed of GaN, but are not limited thereto, and may be formed of AlGaN or AlInGaN.
  • the present invention by adopting a gallium nitride substrate it is possible to improve the crystallinity of the semiconductor layers grown thereon to improve the luminous efficiency of the light emitting diode. Furthermore, by forming the first semiconductor layer thickly, the crystallinity of the semiconductor layers can be further improved, and the forward voltage can be reduced. In addition, by arranging a superlattice layer between the first semiconductor layer and the active layer, it is possible to prevent crystal defects that may be generated in the active layer.
  • FIG. 1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view illustrating a superlattice layer according to an embodiment of the present invention.
  • FIG 3 is a cross-sectional view illustrating a superlattice layer according to another exemplary embodiment of the present invention.
  • FIG. 4 is a cross-sectional view for describing an active layer according to an embodiment of the present invention.
  • FIG. 5 shows an energy band for explaining the active layer of FIG. 4.
  • FIG. 6 is a cross-sectional view illustrating a change in stress caused by epitaxial layers grown on a gallium nitride substrate.
  • FIG. 7 is a graph for explaining the increase in light output according to the use of gallium nitride substrate.
  • FIG 8 is a graph illustrating an increase in light output according to a thickness of a first semiconductor layer.
  • FIG. 1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
  • the light emitting diode includes a gallium nitride substrate 11, a first semiconductor layer 13, an active layer 30, an electron block layer 41, and a second semiconductor layer 43.
  • the light emitting diode may include a superlattice layer 20, a transparent electrode layer 45, a first electrode 47, and a second electrode 49.
  • the gallium nitride substrate 11 may have a c-plane growth surface.
  • the growth surface of the gallium nitride substrate 11 may have an inclination angle to help the growth of the epi layer.
  • Such gallium nitride substrate 11 can be manufactured using, for example, HVPE technology.
  • the gallium nitride substrate 11 may have a thickness of about 100um to 450um.
  • the first semiconductor layer 13 is formed of GaN doped with Si.
  • the first semiconductor layer 13 may be directly grown on the gallium nitride substrate 11. As illustrated, the first electrode 47 may be in ohmic contact on the first semiconductor layer 13.
  • the first semiconductor layer 13 may have a thickness of about 5um to about 15um. Preferably, the first semiconductor layer 13 may have a thickness of 7um to 10um.
  • the thickness of the first semiconductor layer 13 means the thickness of a single GaN layer. That is, the semiconductor layer 13 continuously grown with the same composition has a thickness of 5 ⁇ m or more.
  • the substrate 11 is a gallium nitride substrate, a single semiconductor layer of 2 ⁇ m or more can be grown thereon.
  • a superlattice layer 20 having a multilayer structure is positioned on the first semiconductor layer 13.
  • the superlattice layer 20 is located between the first semiconductor layer 13 and the active layer 30, and thus is located on the current path.
  • the superlattice layer 20 may be formed by repeatedly stacking a pair of InGaN / GaN (for example, 15 to 20 cycles), but is not limited thereto.
  • the three-layer structure of the InGaN layer 21 / AlGaN layer 22 / GaN layer 23 has a plurality of cycles (for example, about 10 to 20 cycles). ) May have a repeatedly stacked structure.
  • the order of the AlGaN layer 22 and the InGaN layer 21 may be reversed.
  • the InGaN layer 21 has a wider band gap than the well layer in the active layer 30.
  • the AlGaN layer 22 preferably has a wider band gap than the barrier layer in the active layer 30.
  • the InGaN layer 21 and the AlGaN layer 22 may be formed of an undoped layer that is not intentionally doped with impurities, and the GaN layer 23 may be formed of a Si doped layer.
  • the uppermost layer of the superlattice layer 20 is preferably a GaN layer 23 doped with impurities.
  • the AlGaN layer 22 may be formed to a thickness of less than 1 nm.
  • the superlattice layer 20 forms the AlGaN layer 22 on the InGaN layer 21, lattice mismatch between them is large and crystal defects are likely to be formed at the interface. Therefore, an AlInGaN layer may be used instead of the AlGaN layer 22 to reduce the lattice mismatch with the InGaN layer 21.
  • a GaN layer 24 may be inserted between the InGaN layer 21 and the AlGaN layer 22 as shown in FIG. 3.
  • the GaN layer 24 may be formed of an undoped layer or a Si doped layer.
  • the active layer 30 of the multi-quantum well structure is positioned on the superlattice layer 20.
  • the active layer 30 has a structure in which barrier layers 31a and 31b and well layers 33n, 33, and 33p are alternately stacked.
  • 33n represents the well layer (first well layer) closest to the superlattice layer 20 or the first semiconductor layer 13
  • 33p represents the electron block layer 41 or the p-type contact layer 23.
  • the nearest well layer (nth well layer) is shown.
  • 5 illustrates an energy band of the active layer 30.
  • a plurality of (n-1) barrier layers 31a and 31b and a plurality of (n-2) well layers are formed between the well layer 33n and the well layer 33p.
  • the fields 33 are stacked alternately with each other.
  • the barrier layers 31a have a thickness thicker than the average thickness of these (n-1) plurality of barrier layers 31a 31b, and the barrier layers 31b have a thickness thinner than the average thickness. Further, as shown, the barrier layers 31a are disposed close to the first well layer 33n and the barrier layers 31b are disposed close to the nth well layer 33p.
  • five well layers 33n, 33, 33p are used, but not limited thereto, and a larger number of well layers may be used.
  • the efficiency decrease caused by the increase of the current density that is, the droop phenomenon may be alleviated.
  • the barrier layer 31a may be positioned in contact with the uppermost layer of the superlattice layer 20. That is, the barrier layer 31a may be located between the superlattice layer 20 and the first well layer 33n. In addition, the barrier layer 35 may be positioned on the nth well layer 33p. The barrier layer 35 may have a relatively thicker thickness than the barrier layer 31a.
  • a relatively thin thickness of the barrier layers 31b close to the nth well layer 33p reduces the resistive component of the active layer 30 and also injects holes injected from the second semiconductor layer 43 into the active layer 30. It is possible to disperse the well layers 33, thereby lowering the forward voltage of the light emitting diode.
  • the crystallization of epitaxial layers formed thereon to heal crystal defects generated during the growth of the active layer 30, especially the well layers 33n, 33, 33p. Can be improved.
  • the number of the barrier layers 31b is greater than the number of the barrier layers 31a, the defect density may increase in the active layer 30, thereby reducing the light emission efficiency. Therefore, it is preferable to form the number of the barrier layers 31a more than the number of the barrier layers 31b.
  • the well layers 33n, 33, 33p may have almost the same thickness as each other, thereby emitting light having a very small half width.
  • the thicknesses of the well layers 33n, 33, and 33p may be adjusted differently to emit light having a relatively wide half width.
  • the thickness of the well layer 33 positioned between the barrier layers 31b relatively thin compared to the well layer 33 positioned between the barrier layers 31a, it is possible to prevent the formation of crystal defects. Can be.
  • the thickness of the well layers 33n, 33, 33p is, for example, in the range of 10 to 30 kPa
  • the thickness of the barrier layers 31a is in the range of 50 to 70 kPa
  • the thickness of the barrier layers 31b The thickness may be in the range of 30 to 50 mm 3.
  • the well layers 33n, 33, 33p may be formed of a gallium nitride based layer that emits light in the near ultraviolet or blue region.
  • the well layers 33n, 33, 33p may be formed of InGaN, and the In composition ratio is adjusted according to a required wavelength.
  • the barrier layers 31a and 31b are gallium nitride based layers having a wider bandgap than the well layers 33n, 33, 33p to trap electrons and holes in the well layers 33n, 33, 33p. Is formed.
  • the barrier layers 31a and 31b may be formed of GaN, AlGaN or AlInGaN.
  • the barrier layers 31a and 31b may be formed of a gallium nitride based layer containing Al to further increase the band gap.
  • the composition ratio of Al in the barrier layers 31a and 31b is preferably greater than 0 and less than 0.1, and in particular, may be 0.02 to 0.05.
  • the light output can be increased by limiting the Al composition ratio within the above range.
  • a cap layer may be formed between the well layers 33n, 33, 33p and the barrier layers 31a and 31b disposed thereon.
  • the cap layer is formed to prevent the well layer from being damaged while raising the chamber temperature to grow the barrier layers 31a and 31b.
  • the well layers 33n, 33, 33p may be grown at a temperature of about 780 ° C
  • the barrier layers 31a, 31b may be grown at a temperature of about 800 ° C.
  • the electron block layer 41 is positioned on the active layer 30 and is formed of AlInGaN.
  • the electron block layer 41 prevents electrons from moving to the second semiconductor layer 43 to improve luminous efficiency.
  • the thickness of the electron block layer 41 may be formed to be equal to or smaller than the sum of the thicknesses of the well layers in the active layer 30.
  • the conventional electron block layer 41 has generally been formed of AlGaN. However, since AlGaN has a large lattice constant difference from InGaN, more compressive stress is applied to the active layer 30. In addition, as the thickness of the first semiconductor layer 13 increases, additional compressive stress is generated in the active layer 30, and compressive stress by the electron block layer 41 is added.
  • the electron block layer 41 is formed of AlInGaN to reduce the compressive stress applied to the active layer 30 compared to AlGaN. Accordingly, by adopting the AlInGan electron block layer 41, the thickness of the first semiconductor layer 13 can be further increased as compared with the case of using AlGaN.
  • the second semiconductor layer 43 may be formed of GaN doped with Mg.
  • the second semiconductor layer 43 is located on the electron block layer 41.
  • a transparent conductive layer 45 such as ITO or ZnO is formed on the second semiconductor layer 43 to make ohmic contact with the second semiconductor layer 43.
  • the second electrode 49 is electrically connected to the second semiconductor layer 43.
  • the second electrode 49 may be connected to the second semiconductor layer 43 through the transparent conductive layer 45.
  • the first semiconductor layer 13 may be exposed by removing a portion of the second semiconductor layer 43, the electron block layer 41, the active layer 30, and the superlattice layer 20 by an etching process.
  • the first electrode 47 is formed on the exposed first semiconductor layer 13.
  • the epitaxial layers 13 to 43 grown on the gallium nitride substrate 11 may be formed using MOCVD.
  • TMAl, TMGa, and TMIn may be used as the sources of Al, Ga, and In
  • NH 3 may be used as the source of N.
  • SiH 4 may be used as a source of Si which is an n-type impurity
  • Cp 2 Mg may be used as a source of Mg that is a p-type impurity.
  • 6 is a schematic cross-sectional view for explaining a change in stress caused by epitaxial layers grown on a gallium nitride substrate.
  • 6 (a) is a cross-sectional view for explaining the initial state of the gallium nitride substrate 11, and FIG. 6 (b) shows the GaN layer grown on the gallium nitride substrate 11 as the first semiconductor layer 13.
  • 6 (c) is a cross-sectional view for describing a state after growth of the superlattice layer 20 and the active layer 30 on the first semiconductor layer 13, and FIG. It is sectional drawing for demonstrating the state after growth of the electron block layer 41.
  • the gallium nitride substrate 11 is a single layer and there is no stress applied from the outside. Thus, the gallium nitride substrate 11 is shown as having no substrate warpage.
  • the n-type GaN layer is grown as the first semiconductor layer 13 on the gallium nitride substrate 11
  • the n-type GaN layer is formed of the same GaN layer.
  • the gallium nitride substrate 11 is subjected to tensile stress due to the type impurity doping and crystal defects. Accordingly, the n-type GaN layer 13 generates tensile strain.
  • the superlattice layer 20 and the active layer 30 are subjected to compressive stress by the GaN layer 13 because they have a relatively large lattice constant compared to the GaN layer 13.
  • the superlattice layer 20 and the active layer 30 include InGaN
  • the superlattice layer 20 and the active layer 30 tend to have a relatively large lattice constant compared to the GaN layer 13 and the gallium nitride substrate 11. Accordingly, greater compressive stress is applied to the active layer 30 by the gallium nitride substrate 11 and the GaN layer 13.
  • the electron block layer 41 generally contains Al, and thus has a smaller lattice constant than the GaN layer 13. Therefore, the electron block layer 41 applies compressive stress to the active layer 30.
  • compressive stress is applied to the active layer 30 by the substrate 11, the first semiconductor layer 13, and the electron block layer 41 to generate a compressive strain. Moreover, as the thickness of the first semiconductor layer 13 is increased, the compressive strain is further increased. Such a compressive strain may further increase the piezoelectric polarization applied to the well layer to reduce the luminous efficiency.
  • the compressive stress applied to the active layer 30 can be alleviated by forming the electron block layer 41 made of AlInGaN having a larger lattice constant than AlGaN.
  • FIG. 7 is a graph for explaining the increase in light output according to the use of gallium nitride substrate.
  • a c-plane gallium nitride substrate was used as a growth substrate, and epitaxial layers were grown thereon to form a light emitting diode.
  • the superlattice layer 20 was formed by repeatedly stacking InGaN / GaN for 20 cycles, the well layer was formed of an InGaN layer emitting near ultraviolet rays, and the barrier layer was formed of GaN.
  • the first semiconductor layer 13 was 2 um.
  • a sapphire substrate was used as a growth substrate to form a light emitting diode emitting near ultraviolet rays on the sapphire substrate.
  • the thicknesses of the barrier layers and the well layers are the same in the comparative example and the example in order to confirm the light output change according to the difference of the growth substrate.
  • the gallium nitride substrate when used, the light output is increased by 30% or more compared with the case where the sapphire substrate is used.
  • the change in the light output according to the growth substrate difference is determined by the difference in dislocation density in the epi layer, particularly in the active layer 30.
  • FIG. 8 is a graph illustrating an increase in light output according to a thickness of a first semiconductor layer.
  • a GaN layer is formed as a first semiconductor layer 13 on a gallium nitride substrate having a c-plane growth surface, and the light emitting diode is manufactured by varying the thickness of the first semiconductor layer to 2um, 3.5um, 5um, and 10um. It was.
  • the relative light output is shown in FIG. 8 based on the light emitting diode having the first semiconductor layer 13 having a thickness of 2 ⁇ m.
  • the superlattice layer 20, the active layer 30, the electron block layer 41, and the second semiconductor layer 43 were all formed in the same manner.
  • the light output increases as the thickness of the first semiconductor layer 13 increases. In particular, as the thickness of the first semiconductor layer 13 exceeds 5um, it can be seen that the light output further increases.

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Abstract

La présente invention concerne une diode électroluminescente à base de nitrure de gallium. La diode électroluminescente comprend : un substrat de nitrure de gallium ; une première couche semi-conductrice à base de nitrure de gallium qui est disposée sur le substrat de nitrure de gallium ; une seconde couche semi-conductrice à base de nitrure de gallium qui est disposée sur la première couche semi-conductrice ; une couche active d'une structure de puits quantique multiple qui est disposée entre la première couche semi-conductrice et une seconde couche semi-conductrice ; et une couche d'arrêt électronique à base de nitrure de gallium qui est disposée entre la couche active et la seconde couche semi-conductrice. En outre, la première couche semi-conductrice présente une épaisseur comprise entre 5 μm et 15 μm, et la couche d'arrêt électronique est la couche semi-conductrice à base de nitrure de gallium à quatre composants qui contient de l'aluminium et de l'indium. Une augmentation relative de l'épaisseur de la première couche semi-conductrice permet de diminuer une tension directe et d'améliorer le rendement électroluminescent.
PCT/KR2013/002320 2012-03-26 2013-03-21 Diode électroluminescente à base de nitrure de gallium WO2013147453A1 (fr)

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Cited By (2)

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WO2018007427A1 (fr) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Série de couches semi-conductrices
WO2019129473A1 (fr) * 2017-12-28 2019-07-04 Aledia Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles

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JP2000277855A (ja) * 1999-03-25 2000-10-06 Sanyo Electric Co Ltd 半導体発光素子
JP2004072044A (ja) * 2002-08-09 2004-03-04 Sharp Corp ＧａＮ系半導体発光素子の製造方法
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Publication number Priority date Publication date Assignee Title
WO2018007427A1 (fr) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Série de couches semi-conductrices
CN109417113A (zh) * 2016-07-05 2019-03-01 欧司朗光电半导体有限公司 半导体层序列
US20190326476A1 (en) * 2016-07-05 2019-10-24 Osram Opto Semiconductors Gmbh Semiconductor Layer Sequence
US10840411B2 (en) 2016-07-05 2020-11-17 Osram Oled Gmbh Semiconductor layer sequence
CN109417113B (zh) * 2016-07-05 2021-10-15 欧司朗光电半导体有限公司 半导体层序列
DE112017003419B4 (de) 2016-07-05 2022-03-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge
WO2019129473A1 (fr) * 2017-12-28 2019-07-04 Aledia Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles
FR3076399A1 (fr) * 2017-12-28 2019-07-05 Aledia Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles
US11563147B2 (en) 2017-12-28 2023-01-24 Aledia Optoelectronic device comprising three-dimensional light-emitting diodes

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