WO2014046241A1 - Système de traitement de substrat - Google Patents

Système de traitement de substrat Download PDF

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Publication number
WO2014046241A1
WO2014046241A1 PCT/JP2013/075475 JP2013075475W WO2014046241A1 WO 2014046241 A1 WO2014046241 A1 WO 2014046241A1 JP 2013075475 W JP2013075475 W JP 2013075475W WO 2014046241 A1 WO2014046241 A1 WO 2014046241A1
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WO
WIPO (PCT)
Prior art keywords
polymer
wafer
substrate
block copolymer
station
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Application number
PCT/JP2013/075475
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English (en)
Japanese (ja)
Inventor
林　伸一
卓 榎木田
勝 友野
Original Assignee
東京エレクトロン株式会社
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Publication of WO2014046241A1 publication Critical patent/WO2014046241A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Definitions

  • the present invention treats a substrate using a block copolymer comprising a hydrophilic (polar) polymer having hydrophilicity (polarity) and a hydrophobic (nonpolar) polymer having hydrophobicity (no polarity).
  • the present invention relates to a substrate processing system. This application claims priority based on Japanese Patent Application No. 2012-208624 for which it applied to Japan on September 21, 2012, and uses the content here.
  • a resist coating process for coating a resist solution on a semiconductor wafer to form a resist film
  • an exposure process for exposing a predetermined pattern on the resist film Photolithographic processing for sequentially performing development processing for developing the exposed resist film is sequentially performed by the substrate processing system, and a predetermined resist pattern is formed on the wafer.
  • an etching process is performed on the film to be processed on the wafer, and then a resist film removing process is performed to form a predetermined pattern on the film to be processed.
  • Patent Document 1 a wafer processing method using a block copolymer composed of two types of block chains (polymers) has been proposed (Patent Document 1).
  • a neutral layer having an intermediate affinity for two types of polymers is formed on a wafer, and a guide pattern is formed on the neutral layer by using, for example, a resist.
  • a block copolymer is apply
  • a fine pattern is formed on the wafer by the other polymer.
  • the processing target film is etched using the polymer pattern as a mask to form a predetermined pattern on the processing target film.
  • the present invention has been made in view of such points, and in the formation of a pattern using a block copolymer, while maintaining a constant throughput and thermal history, the selection of the polymer after the phase separation from the application of the block copolymer.
  • the goal is to process the wafer consistently until removal.
  • the present invention is a system for processing a substrate using a block copolymer containing a first polymer and a second polymer, wherein the block copolymer is coated on the substrate.
  • a processing unit comprising: a block copolymer coating device that performs phase separation of the block copolymer applied to the substrate into the first polymer and the second polymer; and the phase separation A polymer removing device that selectively removes either the first polymer or the second polymer from the block copolymer, and is provided adjacent to both the processing station and the polymer removing device, An interface station for transferring the substrate between the processing station and the polymer removing apparatus is provided.
  • the block copolymer coating to the polymer phase can be performed.
  • the conveyance path and conveyance time in the process from separation to subsequent selective removal of the polymer can be made constant.
  • the throughput and thermal history can be kept constant in pattern formation using the block copolymer.
  • a predetermined pattern can be appropriately formed on a substrate in substrate processing using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer.
  • FIG. 1 is an explanatory diagram showing an outline of a configuration of a substrate processing system 1 according to the present embodiment.
  • the substrate processing system 1 is loaded into a cassette station 10 as a loading / unloading station where a cassette C containing a plurality of wafers W is loaded / unloaded from / to the outside, for example.
  • a processing station 11 including a plurality of various processing apparatuses that perform predetermined processing on a wafer in a single wafer manner, an etching station 12 that includes etching apparatuses 120 and 121 described below that perform etching processing on the wafer, and processing An interface station 13 that is adjacent to both the station 11 and the etching station 12 and that transfers the wafer W between the processing station 11 and the etching station 12 is integrally connected.
  • a case where a resist film is formed in advance on the wafer W processed by the substrate processing system 1 and the resist film is subjected to an exposure process in a predetermined pattern will be described as an example. .
  • the cassette station 10 is provided with a cassette mounting table 20.
  • the cassette mounting table 20 is provided with a plurality of, for example, four cassette mounting plates 21.
  • the cassette mounting plates 21 are arranged in a line in the horizontal X direction (vertical direction in FIG. 1).
  • the cassette C can be placed on these cassette placement plates 21 when the cassette C is carried in and out of the coating and developing treatment apparatus 2.
  • the cassette station 10 is provided with a wafer transfer device 23 that is movable on a transfer path 22 extending in the X direction as shown in FIG.
  • the wafer transfer device 23 is also movable in the vertical direction and the vertical axis direction ( ⁇ direction), and includes a cassette C on each cassette mounting plate 21 and a delivery device for a third block G3 of the processing station 11 described later.
  • the wafer W can be carried in and out.
  • the processing station 11 is provided with a plurality of, for example, four blocks G1, G2, G3, and G4 having various devices.
  • the first block G1 is provided on the front side of the processing station 11 (X direction negative direction side in FIG. 1), and the second block is provided on the back side of the processing station 11 (X direction positive direction side in FIG. 1).
  • Block G2 is provided.
  • a third block G3 is provided on the cassette station 10 side (Y direction negative direction side in FIG. 1) of the processing station 11, and the interface station 13 side (Y direction positive direction side in FIG. 1) of the processing station 11 is provided. Is provided with a fourth block G4.
  • a plurality of liquid processing apparatuses for example, a developing device 30 for developing a resist after exposure formed on the wafer W to form a resist pattern, A neutral layer forming device 31 that forms a neutral layer by applying a neutral agent on the wafer W, a cleaning device 32 that applies an organic solvent to the wafer W after forming the neutral layer and cleans the wafer W, and a wafer W
  • a block copolymer coating device 33 for coating the block copolymer is stacked on the top in order from the bottom.
  • the developing device 30, the neutral layer forming device 31, the cleaning device 32, and the block copolymer coating device 33 are arranged side by side in the horizontal direction. Note that the number and arrangement of the developing device 30, the neutral layer forming device 31, the cleaning device 32, and the block copolymer coating device 33 can be arbitrarily selected.
  • neutral layer forming device 31 cleaning device 32, and block copolymer coating device 33, for example, spin coating for applying a predetermined coating solution onto the wafer W is performed.
  • spin coating for example, a coating liquid is discharged onto the wafer W from a coating nozzle, and the wafer W is rotated to diffuse the coating liquid to the surface of the wafer W.
  • the configuration of these liquid processing apparatuses will be described later.
  • the block copolymer applied onto the wafer W by the block copolymer coating apparatus 33 includes a first polymer and a second polymer.
  • a hydrophobic polymer having hydrophobicity (nonpolar) is used as the first polymer
  • a hydrophilic polymer having hydrophilicity (polarity) is used as the second polymer.
  • PMMA polymethyl methacrylate
  • PS polystyrene
  • the ratio of the molecular weight of the hydrophilic polymer in the block copolymer is 40% to 60%, and the ratio of the molecular weight of the hydrophobic polymer in the block copolymer is 60% to 40%.
  • the block copolymer is a polymer obtained by linearly chemicalizing these hydrophilic polymer and hydrophobic polymer.
  • an ultraviolet irradiation device 40 for modifying the wafer W by irradiating ultraviolet rays, and heat treatment devices 41 and 42 for performing heat treatment of the wafer W are arranged in the vertical direction and the horizontal direction.
  • the ultraviolet irradiation device 40 includes a mounting table on which the wafer W is mounted, and an ultraviolet irradiation unit that irradiates the wafer W on the mounting table with ultraviolet rays. The configuration of the ultraviolet irradiation device 40 will be described later.
  • the heat treatment apparatuses 41 and 42 have a hot plate for placing and heating the wafer W and a cooling plate for placing and cooling the wafer W, and can perform both heat treatment and cooling treatment.
  • the heat treatment apparatus 41 is used for heat treatment before and after forming the neutral layer.
  • the heat treatment device 42 is a polymer separation device that performs heat treatment of the wafer W coated with the block copolymer by the block copolymer coating device 33 and phase-separates the block copolymer into a hydrophilic polymer and a hydrophobic polymer. Function.
  • the configuration of the heat treatment apparatuses 41 and 42 will be described later. Although the number and arrangement of the ultraviolet irradiation device 40 and the heat treatment devices 41 and 42 can be arbitrarily selected, it is preferable to arrange the wafer W so that the transfer time of the wafer W in the processing station 11 is the shortest.
  • a plurality of delivery devices 50, 51, 52, 53, 54, 55, 56 are provided in order from the bottom.
  • the fourth block G4 is provided with a plurality of delivery devices 60, 61, 62 in order from the bottom.
  • a wafer transfer area D is formed in an area surrounded by the first block G1 to the fourth block G4.
  • a wafer transfer device 70 is disposed in the wafer transfer region D.
  • the wafer transfer device 70 has, for example, a transfer arm that is movable in the Y direction, the X direction, the ⁇ direction, and the vertical direction.
  • the wafer transfer device 70 moves in the wafer transfer area D and transfers the wafer W to a predetermined device in the surrounding first block G1, second block G2, third block G3, and fourth block G4. it can.
  • a plurality of wafer transfer devices 70 are arranged in the vertical direction, and the wafer W can be transferred to a predetermined device having the same height of each of the blocks G1 to G4, for example.
  • a shuttle transfer device 80 that transfers the wafer W linearly between the third block G3 and the fourth block G4 is provided.
  • the shuttle transport device 80 is linearly movable in the Y direction, for example.
  • the shuttle transfer device 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer device 52 of the third block G3 and the transfer device 62 of the fourth block G4.
  • a wafer transfer device 100 is provided next to the third block G3 on the positive side in the X direction.
  • the wafer transfer apparatus 100 has a transfer arm that is movable in the X direction, the ⁇ direction, and the vertical direction, for example.
  • the wafer transfer device 100 can move up and down while supporting the wafer W, and can transfer the wafer W to each delivery device in the third block G3.
  • the interface station 13 is provided with a wafer transfer device 110 and load locks 111 and 112.
  • the load locks 111 and 112 are arranged with the wafer transfer device 110 interposed therebetween.
  • the wafer transfer device 110 has a transfer arm that is movable in the Y direction, the ⁇ direction, and the vertical direction, for example.
  • the wafer transfer device 110 can transfer the wafer W between the transfer devices and the load locks 111 and 112 in the fourth block G4 by supporting the wafer W on a transfer arm.
  • Shutters 113 and 114 are provided on the surfaces of the load locks 111 and 112 facing the wafer transfer device 110, respectively.
  • Etching stations 120 and 121 are provided in the etching station 12.
  • the etching apparatuses 120 and 121 are connected to load locks 111 and 112 via shutters 122 and 123, respectively.
  • the etching apparatuses 120 and 121 function as a polymer removing apparatus that performs an etching process on the block copolymer phase-separated on the wafer W and selectively removes a new aqueous polymer.
  • etching apparatuses 120 and 121 for example, an RIE (Reactive Ion Etching) apparatus that is a plasma processing apparatus is used. That is, in the etching apparatuses 120 and 121, dry etching is performed in which a reactive gas (etching gas) such as oxygen (O 2 ) is plasma-excited by RF power, for example, and the hydrophobic polymer is etched by this plasma.
  • a reactive gas such as oxygen (O 2 ) is plasma-excited by RF power, for example, and the hydrophobic polymer is etched by this plasma.
  • the transfer of the wafer W between the load locks 111 and 112 and the etching apparatuses 120 and 121 is performed by relay transfer mechanisms 124 and 124 provided in the load locks 111 and 112, respectively.
  • the relay transport mechanism 124 includes a support base 125, a link portion 126 connected to the support base 125, and an arm portion 127 connected to the link portion 126.
  • the link portion 126 is connected to a drive mechanism (not shown), and the arm portion 127 can be moved between a position above the support base 125 and the etching apparatus 120.
  • three elevating pins 128 for supporting the wafer W at the upper end thereof are embedded in the support base 125.
  • the elevating pins 128 are configured to be movable up and down in the vertical direction.
  • the elevating pins 128 are moved up and down in a state where the wafer transfer device 110 is kept on the upper side of the support base 125. Wafers W can be delivered between them.
  • the arm part 127 is made to stand by above the support base 125 and the elevating pins 128 are moved up and down, so that the wafer W can be delivered to and from the arm part 127.
  • the developing device 30 has a processing container 130 in which a loading / unloading port (not shown) for the wafer W is formed on a side surface.
  • a spin chuck 140 that holds and rotates the wafer W is provided.
  • a suction port (not shown) for sucking the wafer W is provided. By suction from the suction port, the wafer W is sucked and held on the spin chuck 140.
  • the spin chuck 140 can be rotated at a predetermined speed by a chuck driving unit 141 such as a motor.
  • the chuck driving unit 141 is provided with an elevating drive source (not shown) such as a cylinder, and the spin chuck 140 is movable up and down.
  • a cup 142 that receives and collects the liquid scattered or dropped from the wafer W.
  • the cup 142 has an opening larger than the wafer W so that the spin chuck 140 can be moved up and down on the upper surface.
  • a discharge pipe 143 that discharges the collected liquid and an exhaust pipe 144 that exhausts the atmosphere in the cup 142 are connected to the lower surface of the cup 142.
  • a rail 150 extending along the Y direction is formed on the negative side of the cup 142 in the X direction (downward direction in FIG. 6).
  • the rail 150 is formed, for example, from the outside of the cup 142 in the Y direction negative direction (left direction in FIG. 6) to the outside in the Y direction positive direction (right direction in FIG. 6).
  • two arms 151 and 152 are attached to the rail 150.
  • the first arm 151 supports a supply nozzle 153 for supplying a developing solution and an organic solvent as shown in FIGS.
  • the first arm 151 is movable on the rail 150 by a nozzle driving unit 154 shown in FIG.
  • the supply nozzle 153 can move from the standby portion 155 installed on the outer side of the cup 142 on the positive side in the Y direction to above the center of the wafer W in the cup 142, and further on the surface of the wafer W It can move in the radial direction of W.
  • the first arm 151 can be moved up and down by a nozzle driving unit 154, and the height of the supply nozzle 153 can be adjusted.
  • a developer supply pipe 157 and an organic solvent supply pipe 158 communicating with the developer supply source 156 are connected to the supply nozzle 153.
  • the second arm 152 supports a cleaning liquid nozzle 160 for supplying a cleaning liquid, for example, pure water.
  • the second arm 152 is movable on the rail 150 by the nozzle driving unit 161 shown in FIG. 6, and the cleaning liquid nozzle 160 is moved from the standby unit 162 provided on the Y direction negative direction side of the cup 142 to the cup. 142 can be moved to above the center of the wafer W. Further, the second arm 152 can be moved up and down by the nozzle driving unit 161, and the height of the cleaning liquid nozzle 160 can be adjusted.
  • the cleaning liquid nozzle 160 is connected to a cleaning liquid supply pipe 164 communicating with the cleaning liquid supply source 163 as shown in FIG.
  • the cleaning liquid is stored in the cleaning liquid supply source 163.
  • the cleaning liquid supply pipe 164 is provided with a supply device group 165 including a valve for controlling the flow of the cleaning liquid, a flow rate adjusting unit, and the like.
  • the supply nozzle 153 for supplying the developer and the cleaning liquid nozzle 160 for supplying the cleaning liquid are supported by separate arms. However, the supply nozzle is supported by the same arm and controlled by movement of the arms. The movement and supply timing of 153 and the cleaning liquid nozzle 160 may be controlled.
  • the configurations of the neutral layer forming device 31, the cleaning device 32, and the block copolymer coating device 33, which are other liquid processing devices, are the same as the configuration of the developing device 30 described above except that the liquid supplied from the nozzles is different. Therefore, explanation is omitted.
  • FIG. 7 is a transverse cross-sectional view showing an outline of the configuration of the heat treatment apparatus 41
  • FIG. 8 is a vertical cross-sectional view showing an outline of the configuration of the heat treatment apparatus 41.
  • the heat treatment apparatus 41 has a processing container 170 capable of closing the inside, and a loading / unloading port 171 for the wafer W is formed on a side surface of the processing container 170 facing the wafer transfer apparatus 70. Further, the heat treatment apparatus 41 has a heat plate 172 for placing and heating the wafer W in the processing container 170 and a cooling plate 173 for placing and adjusting the temperature of the wafer W, and performs heat treatment and cooling treatment. You can do both.
  • the hot plate 172 has a substantially disk shape with a thickness.
  • the hot plate 172 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface. By suction from the suction port, the wafer W can be sucked and held on the hot plate 172.
  • an electric heater 172a is provided inside the hot plate 172, and the control unit 300 (to be described later) controls the amount of power supplied to the electric heater 172a, whereby the hot plate 172 is predetermined. Can be controlled to the set temperature.
  • the heat plate 172 has a plurality of through holes 174 penetrating in the vertical direction.
  • a lift pin 175 is provided in the through hole 174.
  • the lift pins 175 can be moved up and down by a lift drive mechanism 176 such as a cylinder.
  • the elevating pins 175 are inserted through the through holes 174 and protrude from the upper surface of the hot plate 172 so that the elevating pins 175 can move up and down while supporting the wafer W.
  • the hot plate 172 is provided with an annular holding member 177 for holding the outer periphery of the hot plate 172.
  • the holding member 177 is provided with a cylindrical support ring 178 that surrounds the outer periphery of the holding member 177 and accommodates the elevating pins 175.
  • the cooling plate 173 has a thick and substantially disk shape.
  • the cooling plate 173 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the wafer W is provided on the upper surface. By suction from this suction port, the wafer W can be sucked and held on the cooling plate 173.
  • a cooling member such as a Peltier element is built in the cooling plate 173, and the cooling plate 173 can be adjusted to a predetermined set temperature.
  • the cooling plate 173 has the same configuration as the hot plate 172. That is, the cooling plate 173 is formed with a plurality of through holes 180 penetrating in the vertical direction. Elevating pins 181 are provided in the through hole 180. The lift pins 181 can be moved up and down by a lift drive mechanism 182 such as a cylinder. The elevating pins 181 are inserted through the through-holes 180 and project from the upper surface of the cooling plate 173 so that the elevating pins 181 can move up and down while supporting the wafer W.
  • a lift drive mechanism 182 such as a cylinder.
  • the elevating pins 181 are inserted through the through-holes 180 and project from the upper surface of the cooling plate 173 so that the elevating pins 181 can move up and down while supporting the wafer W.
  • the cooling plate 173 is provided with an annular holding member 183 that holds the outer periphery of the cooling plate 173.
  • the holding member 183 is provided with a cylindrical support ring 184 that surrounds the outer periphery of the holding member 183 and accommodates the lifting pins 181.
  • the configuration of the heat treatment apparatus 42 is the same as the configuration of the heat treatment apparatus 41, and thus the description thereof is omitted.
  • FIG. 9 is a longitudinal sectional view showing an outline of the configuration of the ultraviolet irradiation device 40.
  • the ultraviolet irradiation device 40 includes a processing container 200 that can be closed inside. In the processing container 200, a mounting table 210 on which the wafer W is mounted, and an ultraviolet irradiation lamp 211 provided above the mounting table 210. A light shielding plate 212 provided between the mounting table 210 and the ultraviolet irradiation lamp 211 is provided. A loading / unloading port 213 for the wafer W is formed on the side surface of the processing container 200 facing the wafer transfer device 70.
  • the mounting table 210 is formed with a plurality of through holes 220 penetrating in the vertical direction. Each through hole 220 is provided with an elevating pin 221 configured to be moved up and down by an elevating mechanism (not shown). The elevating pins 221 are inserted through the through holes 220 and protrude from the upper surface of the mounting table 210 to support the wafer W.
  • the ultraviolet irradiation lamp 211 is held in the processing container 200 by a holding member (not shown).
  • a linear excimer lamp having a wavelength of 172 nm is used as the ultraviolet irradiation lamp 211.
  • three ultraviolet irradiation lamps 211 are illustrated in FIG. 9, the shape, number, and arrangement of the ultraviolet irradiation lamps 211 can be arbitrarily set.
  • the light shielding plate 212 has a substantially disk shape, and a window 212a that transmits ultraviolet rays in a predetermined pattern is formed at the center thereof. For this reason, when the ultraviolet irradiation lamp 211 is used, the window 212a of the light shielding plate 212 functions as a mask for ultraviolet rays, blocks the ultraviolet rays to the peripheral portion of the wafer W, and irradiates the central portion of the wafer W with ultraviolet rays in a predetermined pattern. . As a result, the region of the wafer W irradiated with the ultraviolet rays is modified.
  • the light shielding plate 212 is made of a material that does not transmit ultraviolet rays emitted from the ultraviolet irradiation lamp 211 and is not easily deteriorated by ultraviolet rays, such as a ceramic plate or a metal plate.
  • the substrate processing system 1 described above is provided with a control unit 300 as shown in FIG.
  • the control unit 300 is a computer, for example, and has a program storage unit (not shown).
  • the program storage unit stores a program for controlling the processing of the wafer W in the substrate processing system 1.
  • the program storage unit also stores a program for controlling operations of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize various processes in the substrate processing system 1 with a predetermined tact time. Yes.
  • the program is recorded on a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card. Or installed in the control unit 300 from the storage medium.
  • HD computer-readable hard disk
  • FD flexible disk
  • CD compact disk
  • MO magnetic optical desk
  • FIG. 10 is a flowchart showing an example of main steps of such wafer processing.
  • a cassette C storing a plurality of wafers W is loaded into the cassette station 10 of the substrate processing system 1 and mounted on a predetermined cassette mounting plate 21. Thereafter, the wafers W in the cassette C are sequentially taken out by the wafer transfer device 23 and transferred to the transfer device 53 of the processing station 11. Note that a resist film is formed in advance on the wafer W to be processed by the substrate processing system 1, and the resist film is subjected to exposure processing in a predetermined pattern.
  • the wafer W is transferred to the developing device 30 by the wafer transfer device 70.
  • a developing solution is supplied to the wafer W, and the resist is developed into a predetermined pattern.
  • the wafer W is transferred to the heat treatment apparatus 41 by the wafer transfer apparatus 70 and subjected to a post-bake process.
  • a predetermined resist pattern 400 is formed on the wafer W as shown in FIG. 11 (step S1 in FIG. 10).
  • the resist pattern 400 is a so-called line-and-space resist pattern having a straight line portion 400a and a straight space portion 400b in plan view.
  • the width of the space portion 400b is set so that the hydrophilic polymer 403 and the hydrophobic polymer 404 are alternately arranged in the odd number layers in the space portion 400b as described later.
  • the wafer W is transferred to the neutral layer forming device 31 by the wafer transfer device 70.
  • a neutral agent is applied on the wafer W to form a neutral layer 401 (step S2 in FIG. 10).
  • the wafer W is transferred to the heat treatment apparatus 41, heated, temperature-controlled, and then returned to the delivery apparatus 53.
  • the wafer W is transferred to the cleaning device 32 by the wafer transfer device 70.
  • the cleaning device 32 an organic solvent is supplied onto the wafer W after the neutral layer 401 is formed, and foreign matters on the resist pattern 400 and the neutral layer 401 are washed away.
  • the wafer W is transferred to the block copolymer coating device 33 by the wafer transfer device 70.
  • the block copolymer 402 is coated on the neutral layer 401 of the wafer W as shown in FIG. 13 (step S3 in FIG. 10).
  • the wafer W is transferred to the heat treatment apparatus 42 by the wafer transfer apparatus 70.
  • heat treatment apparatus 42 heat treatment at a predetermined temperature is performed on the wafer W.
  • nitrogen gas is supplied to make the inside of the heat treatment apparatus 42 into a low oxygen atmosphere, and the heat treatment is performed in the nitrogen gas atmosphere.
  • the block copolymer 402 on the wafer W is phase-separated into a hydrophilic polymer 403 and a hydrophobic polymer 404 (step S4 in FIG. 10).
  • the molecular weight ratio of the hydrophilic polymer 403 is 40% to 60%
  • the molecular weight ratio of the hydrophobic polymer 404 is 60% to 40%.
  • step S4 as shown in FIGS. 14 and 15, the hydrophilic polymer 403 and the hydrophobic polymer 404 are phase-separated into a lamellar structure.
  • the width of the space portion 400b of the resist pattern 400 is formed to a predetermined width, the hydrophilic polymer 403 and the hydrophobic polymer 404 are alternately arranged in odd layers in the space portion 400b of the resist pattern.
  • the wafer W is transferred to the delivery device 56 by the wafer transfer device 70.
  • the wafer W is transferred to the transfer device 52 by the wafer transfer device 100 and transferred to the transfer device 62 by the shuttle transfer device 80.
  • the wafer W is transferred to the load lock 111 by the wafer transfer device 110 of the interface station 13.
  • the shutters 113 and 122 are closed, the inside of the load lock 111 is sealed, and the pressure is reduced.
  • the shutter 122 is opened, and the load lock 111 and the etching apparatus 120 that has been previously depressurized are communicated.
  • the wafer W is transferred to the etching apparatus 120 by the relay transfer mechanism 124.
  • the wafer W is etched by plasma processing to selectively remove the hydrophilic polymer 403 as shown in FIG. 16, and a predetermined pattern is formed by the hydrophobic polymer 404 (step S5 in FIG. 10). ).
  • the wafer W is returned again to the load lock 111 by the relay transfer mechanism 124. Then, the wafer is transferred to the delivery device 62 by the wafer transfer device 110. Next, the wafer W is transferred to the transfer device 52 by the wafer transfer device 100 and transferred to the transfer device 52 by the shuttle transfer device 80. Thereafter, the wafer is transferred to the cassette C of the predetermined cassette mounting plate 21 by the wafer transfer device 23 of the cassette station 10 and unloaded from the substrate processing system 1.
  • the processing station 11 includes the block copolymer coating device 33, the heat treatment device 42 as a polymer separation device, and the wafer transfer device 70 for transferring the wafer W in the processing station 11, and the processing An etching station provided with etching apparatuses 120 and 121 as polymer removing apparatuses is provided adjacent to the station 11. Therefore, in the steps from application of the block copolymer 402 to phase separation of the block copolymer 402 into the hydrophilic polymer 403 and the hydrophobic polymer 404 and subsequent selective removal of the hydrophilic polymer by etching, a conveyance path And the conveyance time can be made constant. As a result, the throughput and thermal history can be kept constant in pattern formation using the block copolymer 402, and variations in the pattern formed of the polymer can be avoided.
  • the block copolymer 402 is applied to the wafer after the neutral layer 401 is formed.
  • the neutral layer 401 is not necessarily applied.
  • the neutral layer forming device 31 is not necessarily provided.
  • an antireflection film is formed as a base of the resist film. Since this antireflection film has hydrophilicity, for example, as shown in FIG. 17, for example, three layers of hydrophilic polymer 403 and hydrophobic polymer 404 are alternately arranged in the width of the space portion 400b of the resist pattern 400. Set to be. Then, since the antireflection film 410 has hydrophilicity, as shown in FIG. 18, the hydrophilic polymer 403 is disposed in the middle of the space portion 400b, and the hydrophobic polymer 404 is disposed on both sides thereof.
  • step S1 after forming the resist pattern 400 in step S1, the resist pattern 400 is transferred to the block copolymer coating device 33 instead of the neutral layer forming device 31, and coating of the block copolymer 402 (step S3) is performed.
  • step S3 coating of the block copolymer 402
  • the wafer W that can be processed by the substrate processing system 1 is the present embodiment. It is not limited to the form.
  • the wafer W coated with the neutral layer 401 in advance may be processed.
  • the wafer W on which a resist pattern is formed in advance may be processed.
  • the wafer W taken out from the cassette C is first transported to the ultraviolet irradiation device 40.
  • the neutral layer 401 on the wafer W is irradiated with ultraviolet rays as shown in FIG.
  • the neutral layer 401 is irradiated with ultraviolet rays in a predetermined pattern, for example, a width where three layers of the hydrophilic polymer 403 and the hydrophobic polymer 404 are alternately arranged by the light shielding plate 212.
  • the neutral layer 401 irradiated with ultraviolet rays is oxidized and hydrophilized.
  • the region of the neutral layer 401 thus made hydrophilic may be referred to as a hydrophilic region 420.
  • active oxygen can be generated from oxygen in the processing atmosphere, and the exposed surface of the neutral layer 401 is oxidized and hydrophilized by this active oxygen.
  • active oxygen in order to generate
  • the wavelength of ultraviolet rays is 172 nm, not only when ozone is used as a processing atmosphere, but also when the processing atmosphere is an air atmosphere, active oxygen can be efficiently generated from oxygen in the air atmosphere. I know it.
  • the wafer W is transferred to the heat treatment apparatus 41 and subjected to heat treatment. Thereafter, the wafer W is transferred to the block copolymer coating device 33.
  • the block copolymer coating device 33 the block copolymer 402 is coated on the neutral layer 401 of the wafer W as shown in FIG.
  • the wafer W is transferred to the heat treatment apparatus 42, and the block copolymer 402 is phase-separated into a hydrophilic polymer 403 and a hydrophobic polymer 404 as shown in FIG.
  • the hydrophilic polymer 403 and the hydrophobic polymer 404 are alternately arranged in three layers on the hydrophilic region 420 of the neutral layer 401.
  • the hydrophilic polymer 403 is disposed in the middle of the hydrophilic region 420, and the hydrophobic polymers 404 and 404 are disposed on both sides thereof.
  • the hydrophilic polymer 403 and the hydrophobic polymer 404 are alternately arrange
  • FIG. Thereafter, the wafer W is etched in step S5.
  • a polystyrene film 411 is formed in advance on the lower surface of the resist pattern 400 on the wafer W on which the resist pattern 400 has been formed in advance.
  • the line part 400a of the polystyrene film 411 and the resist pattern 400 is a line-and-space resist pattern, and the width of the line part 400a is such that only one layer of the hydrophilic polymer 405 is disposed in the line part 402a. Is set.
  • the width of the space portion 400b is set so that the hydrophilic polymer 403 and the hydrophobic polymer 404 are alternately arranged in the space portion 400b by an odd number of layers.
  • An antireflection film 410 is formed on the base of the resist pattern 400.
  • the wafer W taken out from the cassette C is first transported to the cleaning device 32 and cleaned with an organic solvent.
  • the resist pattern 400 on the wafer W is removed, and a pattern of the polystyrene film 411 is formed on the wafer W.
  • the wafer W is transferred to the neutral layer forming apparatus 31.
  • a neutral layer 401 is formed on the antireflection film 410 of the wafer W as shown in FIG.
  • the wafer W is transferred to the heat treatment apparatus 41, heated, and the temperature is adjusted.
  • the wafer W is transferred to the block copolymer coating device 33.
  • the block copolymer 402 is coated on the neutral layer 401 and the polystyrene film 411 of the wafer W as shown in FIG.
  • the wafer W is transferred to the heat treatment apparatus 42 and subjected to heat treatment, and the block copolymer 402 is separated into a hydrophilic polymer 403 and a hydrophobic polymer 404 as shown in FIG.
  • the widths of the line part 400a and the space part 400b of the resist pattern 400 described above are formed to have predetermined widths, one layer of the hydrophobic polymer 404 is disposed on the polystyrene film 411, and the neutral layer 401 is formed. On the top, an odd number of layers of hydrophilic polymer 405 and hydrophobic polymer 406 are alternately arranged.
  • the wafer W is etched in step S5.
  • the so-called dry etching process is performed in the etching apparatuses 120 and 121 to selectively remove the hydrophilic polymer 403.
  • the hydrophilic polymer 403 may be removed by a wet etching process.
  • a solvent supply device 500 that supplies an organic solvent onto the wafer W is provided in the first block G ⁇ b> 1 of the coating and developing treatment apparatus 2.
  • positioning of the solvent supply apparatus 500 can be selected arbitrarily, in order to make conveyance of the wafer W the shortest, it is preferable to arrange
  • spin coating for applying a predetermined coating solution onto the wafer W is performed in the same manner as the other liquid processing devices of the first block G1.
  • the wafer W obtained by phase separation of the block copolymer 402 in step S4 is changed to the etching device 120 in step S5, and is first transferred to the ultraviolet irradiation device 40. Then, by irradiating the wafer W with ultraviolet light having a wavelength of 200 nm or less, for example, 172 nm, the bond chain of polymethyl methacrylate, which is the hydrophilic polymer 403, is cut, and the polystyrene, which is the hydrophobic polymer 404, is crosslinked. At this time, ultraviolet irradiation is performed on the entire surface of the wafer W without using the light shielding plate 212.
  • the wafer W is transferred to the solvent supply device 500, and isopropyl alcohol (IPA) is supplied to the wafer W in the solvent supply device 500.
  • IPA isopropyl alcohol
  • the selective ratio between the hydrophilic polymer 403 and the hydrophobic polymer 404 is, for example, about 3 to 7: 1.
  • the hydrophilic polymer 403 is removed by so-called wet etching using an organic solvent, since the hydrophobic polymer 404 is hardly dissolved in the organic solvent, film slippage can be avoided. As a result, a sufficient film thickness as a mask can be ensured when the film to be processed is etched using the pattern of the hydrophobic polymer 404 as a mask in subsequent steps.
  • the substrate processing system 1 mainly performs the processing related to the coating process of the block copolymer 402.
  • the resist pattern which is the pre-processing of the coating of the block copolymer 402 is performed. 400 may be formed.
  • an etching station 510 is provided adjacently between the cassette station 10 and the processing station 11.
  • An exposure device 511 is disposed on the side of the processing station 11 opposite to the cassette station 10.
  • the wafer transfer device 110 provided in the interface station 13 and the load locks 111 and 112 provided in the interface station 13 in the above-described example are arranged in a straight line with respect to the etching devices 120 and 121.
  • the interface station 13 is shown in a state where the interface station 13 is omitted. This is because the transfer of the wafer W between the wafer transfer apparatus 110 and the wafer transfer apparatus 100 is considered. As long as the wafer W can be appropriately transferred between the wafer transfer apparatus 110 and the wafer transfer apparatus 100, the arrangement of the devices in the etching station and the interface station is not limited to this embodiment, and can be arbitrarily set.
  • the first block G1 of the processing station 11 includes A lower antireflection film forming apparatus 520 that forms a lower antireflection film on the wafer W, a resist coating apparatus 521 that forms a resist film by applying a resist solution on the wafer W, and an upper antireflection film is formed on the resist film.
  • An upper antireflection film forming apparatus 522 is further provided.
  • the lower antireflection film forming device 520, the resist coating device 521, and the upper antireflection film forming device 522 are arranged below the developing device 30 in this order from the bottom.
  • the wafer W is first transferred to the lower antireflection film forming apparatus 520, and a lower antireflection film is formed on the wafer W (step T1 in FIG. 29). Thereafter, the wafer W is transferred to the heat treatment apparatus 41, heated, and the temperature is adjusted.
  • the wafer W is transferred to the resist coating device 521, and a resist solution is applied onto the lower antireflection film of the wafer W to form a resist film (step T2 in FIG. 29). Thereafter, the wafer W is transferred to the heat treatment apparatus 41 and prebaked. Thereafter, the wafer W is transferred to the upper antireflection film forming apparatus 522, and an upper antireflection film is formed on the resist film (step T3 in FIG. 29). Thereafter, the wafer W is transferred to the exposure apparatus 511 and subjected to exposure processing with a predetermined pattern (step T4 in FIG. 29).
  • the wafer W is post-exposure baked in the heat treatment apparatus 41. Thereafter, the wafer W is transferred to the developing device 30 and developed. After completion of the development, the wafer W is transferred to the heat treatment apparatus 41 and subjected to a post baking process. Thus, a predetermined resist pattern is formed on the wafer W (step S1 in FIG. 29).
  • the other steps S2 to S5 are the same as in the above embodiment.
  • the substrate processing system 1 can consistently perform the processes from the formation of the resist pattern on the wafer W to the pattern formation by the hydrophobic polymer 404. Therefore, the throughput and thermal history of the wafer W can be made constant, thereby avoiding variations in the pattern formed by the polymer.
  • the wafer W after the layer separation of the block copolymer 402 in step S4 is transferred to the etching station 12 disposed on the cassette station 10 side of the processing station 11.
  • the transport route is different from the above embodiment.
  • the substrate processing system 1 may further include an inspection station that inspects the wafer W on which a predetermined pattern is formed by removing the hydrophilic polymer 403 at the etching station 12.
  • an inspection station 530 for inspecting the wafer W is arranged between the etching station 12 and the cassette station 10, and the wafer W on which a predetermined pattern is formed in the etching station 12 is inspected. Transported to station 530 for inspection.
  • the pattern formed on the wafer W is imaged by, for example, a CCD camera, and the quality of the pattern is determined. If it is determined that the pattern is well formed, the wafer W is transferred to the cassette C of the cassette station 10, and if it is determined that there is an abnormality in the pattern, it is recovered, for example, in a recovery cassette CA.
  • the substrate processing system 1 is a wafer etching apparatus as a substrate etching apparatus that performs an etching process on the wafer W using a pattern of the hydrophobic polymer 404 formed by removing the hydrophilic polymer 403 at the etching station 12 as a mask.
  • the wafer etching station provided with may be provided.
  • the wafer etching station 540 is disposed between the etching station 12 and the cassette station 10.
  • the wafer etching station 540 has the same configuration as that of the etching station 510 shown in FIG. 27.
  • wafer etching apparatuses 550 and 551, load locks 552 and 553, and a wafer transfer apparatus 560 are linear. Is arranged.
  • the configurations of wafer etching apparatuses 550 and 551, load locks 552 and 553, and wafer transfer apparatus 560 are the same as those of etching apparatuses 120 and 121, load locks 111 and 112, and wafer transfer apparatus 110, respectively.
  • the wafer W from which the hydrophilic polymer 403 has been removed at the etching station 510 through steps T1 to T4 and steps S1 to S5 is transferred to the wafer etching station 540.
  • the wafer W transferred to the wafer etching station 540 is transferred to the wafer etching apparatus 550, and the wafer W or a film to be processed previously formed on the upper surface of the wafer W is etched using the hydrophobic polymer 404 as a mask.
  • the wafer W after the etching process is transferred to the cassette station 10 and accommodated in the cassette C.
  • the substrate processing system 1 can consistently perform from the formation of the resist pattern on the wafer W to the etching process of the wafer W. Therefore, the throughput and thermal history of the wafer W can be made constant, thereby avoiding variations in the pattern formed by the polymer.
  • the block copolymer 402 on the wafer W is phase-separated into the hydrophilic polymer 403 and the hydrophobic polymer 404 having a lamellar structure.
  • the substrate processing system 1 of the present invention uses the block copolymer 402 as the block copolymer 402.
  • the present invention can also be applied to the case where phase separation into a hydrophilic polymer 403 having a cylindrical structure and a hydrophobic polymer 404 is performed.
  • the ratio of the molecular weight of the hydrophilic polymer 403 is 20% to 40%, and the ratio of the molecular weight of the hydrophobic polymer 404 in the block copolymer 402 is 80% to 60%. %.
  • a resist pattern having a circular space 400c in a plan view is formed on the wafer W.
  • the arrangement of the space portions 400c is arranged in a staggered manner in a plan view.
  • step S5 when the block copolymer 402 is phase-separated in step S5, it is phase-separated into a hydrophilic polymer 403 having a cylindrical structure and a hydrophobic polymer 405 as shown in FIG.
  • the hydrophilic polymer 403 is formed on the hydrophilic space portion 400c and on the resist pattern 400 between the two space portions 400c and 400c.
  • the hydrophobic polymer 404 is formed on the other resist pattern 400.
  • a predetermined hole-shaped pattern is formed in the film to be processed.
  • the block copolymer 402 can be appropriately separated into the hydrophilic polymer 403 and the hydrophobic polymer 404 having a cylindrical structure, and the etching process of the film to be processed can be appropriately performed.
  • the block copolymer 402 of the above embodiment has polymethyl methacrylate (PMMA) and polystyrene (PS), but includes a hydrophilic polymer having hydrophilicity and a hydrophobic polymer having hydrophobicity. It is not limited to this.
  • silicone rubber PDMS
  • PEO polyethylene oxide
  • PBD polyethylene polybutadiene
  • PVP polyvinyl pyridine
  • the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.
  • the present invention is not limited to this example and can take various forms.
  • the present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.
  • FPD flat panel display
  • the present invention is useful when a substrate is treated with a block copolymer containing, for example, a hydrophilic polymer having hydrophilicity and a hydrophobic polymer having hydrophobicity.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un système destiné à traiter un substrat au moyen d'un copolymère à blocs contenant un premier polymère et un second polymère. Le système comprend une station de traitement, un dispositif de retrait de polymère et une station d'interface. La station de traitement comprend un dispositif d'application de copolymère à blocs permettant d'appliquer le copolymère à blocs sur le substrat ; et un dispositif de séparation de polymère permettant de provoquer une séparation de phase dans le copolymère à blocs appliqué dans le premier polymère et le second polymère. Le dispositif de retrait de polymère retire de façon sélective le premier polymère ou le second polymère du copolymère à blocs dans l'état de séparation de phase. La station d'interface est placée de manière à être adjacente à la fois à la station de traitement et au dispositif de retrait de polymère, afin de faire passer/recevoir le substrat vers/depuis la station de traitement et le dispositif de retrait de polymère.
PCT/JP2013/075475 2012-09-21 2013-09-20 Système de traitement de substrat WO2014046241A1 (fr)

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JP6267143B2 (ja) * 2015-03-05 2018-01-24 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP6837929B2 (ja) * 2017-06-23 2021-03-03 東京エレクトロン株式会社 基板処理装置

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JPH11145055A (ja) * 1997-08-15 1999-05-28 Tokyo Electron Ltd 基板処理装置
JP2001015408A (ja) * 1999-06-29 2001-01-19 Toshiba Corp レジストパターン形成装置及び基板検査装置
JP2007110078A (ja) * 2005-09-13 2007-04-26 Tokyo Electron Ltd 基板処理装置、基板処理方法、基板処理プログラム及びそのプログラムを記録したコンピュータ読み取り可能な記録媒体
JP2008036491A (ja) * 2006-08-03 2008-02-21 Nippon Telegr & Teleph Corp <Ntt> パターン形成方法及びモールド
JP2010003903A (ja) * 2008-06-20 2010-01-07 Dainippon Screen Mfg Co Ltd 基板処理装置
WO2012014700A1 (fr) * 2010-07-28 2012-02-02 株式会社 東芝 Procédé de formation de motif et matériau à base d'alliage polymère
JP2012078828A (ja) * 2010-10-04 2012-04-19 Rohm & Haas Electronic Materials Llc 下層組成物および下層を像形成する方法
JP2012078830A (ja) * 2010-10-04 2012-04-19 Rohm & Haas Electronic Materials Llc 下層組成物および下層を像形成する方法
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Publication number Priority date Publication date Assignee Title
JPH11145055A (ja) * 1997-08-15 1999-05-28 Tokyo Electron Ltd 基板処理装置
JP2001015408A (ja) * 1999-06-29 2001-01-19 Toshiba Corp レジストパターン形成装置及び基板検査装置
JP2007110078A (ja) * 2005-09-13 2007-04-26 Tokyo Electron Ltd 基板処理装置、基板処理方法、基板処理プログラム及びそのプログラムを記録したコンピュータ読み取り可能な記録媒体
JP2008036491A (ja) * 2006-08-03 2008-02-21 Nippon Telegr & Teleph Corp <Ntt> パターン形成方法及びモールド
JP2010003903A (ja) * 2008-06-20 2010-01-07 Dainippon Screen Mfg Co Ltd 基板処理装置
WO2012014700A1 (fr) * 2010-07-28 2012-02-02 株式会社 東芝 Procédé de formation de motif et matériau à base d'alliage polymère
JP2012078828A (ja) * 2010-10-04 2012-04-19 Rohm & Haas Electronic Materials Llc 下層組成物および下層を像形成する方法
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