WO2014045803A1 - 接合システム、接合方法及びコンピュータ記憶媒体 - Google Patents

接合システム、接合方法及びコンピュータ記憶媒体 Download PDF

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Publication number
WO2014045803A1
WO2014045803A1 PCT/JP2013/072709 JP2013072709W WO2014045803A1 WO 2014045803 A1 WO2014045803 A1 WO 2014045803A1 JP 2013072709 W JP2013072709 W JP 2013072709W WO 2014045803 A1 WO2014045803 A1 WO 2014045803A1
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WIPO (PCT)
Prior art keywords
wafer
substrate
bonding
adhesive
heat treatment
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Ceased
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PCT/JP2013/072709
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English (en)
French (fr)
Japanese (ja)
Inventor
雅敏 出口
直人 吉高
正隆 松永
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means

Definitions

  • the present invention relates to a bonding system for bonding substrates together via an adhesive, a bonding method using the bonding system, and a computer storage medium.
  • This application claims priority based on Japanese Patent Application No. 2012-206555 for which it applied to Japan on September 20, 2012, and uses the content here.
  • the diameter of a semiconductor wafer (hereinafter referred to as “wafer”) is increasing. Further, in a specific process such as mounting, it is required to make the wafer thinner. For example, if a thin wafer having a large diameter is transported or polished as it is, the wafer may be warped or cracked. For this reason, for example, in order to reinforce the wafer, the wafer is attached to, for example, a wafer that is a support substrate or a glass substrate.
  • the bonding between the wafer and the support substrate is performed by interposing an adhesive between the wafer and the support substrate using, for example, a bonding system.
  • the bonding system includes, for example, a coating device that applies an adhesive to a wafer, a heat treatment device that heats the wafer coated with the adhesive, and a plurality of bonding devices that press and bond the wafer and the support substrate via the adhesive. And have.
  • Each joining apparatus has a pretreatment region and a joining region. In the bonding apparatus, for example, the position of the wafer is adjusted in the pretreatment region, the position of the support substrate is adjusted, the front and back surfaces of the support substrate are reversed, and then the wafer and the support substrate are pressed in the bonding region.
  • Joining (Patent Document 1).
  • Patent Document 1 since the joining device described in Patent Document 1 includes a pretreatment region and a joining region, the area occupied by each joining device increases. For this reason, the occupation area of the whole joining system which has several joining apparatuses also becomes large.
  • the present invention has been made in view of such points, and an object thereof is to reduce the occupation area of the bonding system while appropriately bonding the substrate to be processed and the support substrate in the bonding system.
  • the present invention is a bonding system for bonding substrates through an adhesive, and includes a processing station that performs predetermined processing on a substrate, and a substrate or a superposed substrate bonded to each other.
  • a loading / unloading station that loads and unloads the processing station, and the processing station heat-treats the one substrate on which the adhesive is applied, and a coating apparatus that applies the adhesive to one substrate.
  • a heat treatment apparatus, and a position adjustment apparatus that adjusts the position of the one substrate that has been heat-treated, adjusts the position of another substrate that is bonded to the one substrate, and reverses the front and back surfaces of the other substrate;
  • a plurality of joining devices that press and join the substrates whose positions have been adjusted via the adhesive, and the coating device, the heat treatment device, the position adjusting device, and the plurality of joining devices.
  • one position adjusting device is provided for a plurality of joining devices in the joining system, that is, the position adjusting device is provided in common to the plurality of joining devices. For this reason, compared with the case where the joining apparatus and the position adjusting apparatus are provided on a one-to-one basis as in the prior art, the occupation area of the joining system can be reduced by the amount of the position adjusting apparatus. Accordingly, the manufacturing cost of the joining system can be reduced.
  • an adhesive is applied to one substrate in the coating apparatus (application process), the one substrate coated with the adhesive in the coating process is transported to a heat treatment apparatus, and the one substrate is heat treated in the heat treatment apparatus.
  • the heat treatment step the one substrate heat-treated in the heat treatment step is transported to the position adjusting device, and the position adjusting device adjusts the position of the one substrate (first position adjusting step).
  • the other substrate bonded to the one substrate is adjusted, the front and back surfaces of the other substrate are reversed (second position adjusting step), and the first substrate subjected to the first position adjusting step is performed.
  • the other substrate on which the second position adjustment step has been performed to the bonding device, and in the bonding device, the one substrate and the other substrate are pressed and bonded via the adhesive.
  • Joining process As described above, since the application process, the heat treatment process, the first position adjustment process, the second position adjustment process, and the bonding process are performed in one bonding system, a series of bonding processes can be appropriately performed.
  • the present invention according to another aspect is a bonding method for bonding substrates to each other via an adhesive, wherein the adhesive is applied to one substrate in a coating apparatus, and the adhesive is applied in the coating process.
  • the processed substrate is transported to a heat treatment apparatus, the heat treatment step of heat treating the one substrate in the heat treatment apparatus, and the one substrate heat-treated in the heat treatment step is transported to the position adjustment apparatus.
  • the first position adjusting step for adjusting the position of the one substrate, and in the position adjusting device the position of the other substrate bonded to the one substrate is adjusted, and the front and back surfaces of the other substrate are reversed.
  • a second position adjusting step to be performed, and one substrate on which the first position adjusting step has been performed are transported to the bonding apparatus, and another substrate on which the second position adjusting process has been performed is transferred to the bonding apparatus.
  • Transport and concerned A bonding step of pressing and bonding the one substrate and the other substrate via the adhesive, the coating apparatus, the heat treatment apparatus, the position adjusting apparatus, and the plurality of the bonding
  • the bonding step is performed in parallel on the plurality of the one substrate and the plurality of the other substrates.
  • Another aspect of the present invention is a readable computer storage medium storing a program that operates on a computer of a control unit that controls the joining system so that the joining method is executed by the joining system.
  • the present invention it is possible to reduce the occupation area of the bonding system while appropriately bonding the substrate to be processed and the support substrate in the bonding system, and to reduce the manufacturing cost of the bonding system.
  • FIG. 1 is a plan view showing the outline of the configuration of the joining system 1 according to the present embodiment.
  • FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system 1.
  • a processing target wafer W as a processing target substrate and a supporting wafer S as a supporting substrate are bonded via an adhesive G.
  • a surface bonded to the support wafer S via the adhesive G is referred to as a “bonding surface W J ” as a surface, and a surface opposite to the bonding surface W J is defined as a “back surface”. It is referred to as “non-bonding surface W N ”.
  • a surface bonded to the processing target wafer W via the adhesive G is referred to as a “bonding surface S J ” as a surface, and a surface opposite to the bonding surface S J is defined as a “back surface”. It is referred to as “non-joint surface S N ”.
  • the to-be-processed wafer W and the support wafer S are joined, and the superposition
  • wafer W is a wafer as a product, for example, joint surface W J A plurality of electronic circuit is formed on the non-bonding surface W N is polished.
  • the support wafer S is a wafer having the same diameter as that of the wafer W to be processed and supporting the wafer W to be processed.
  • the case where a wafer is used as the support substrate will be described, but another substrate such as a glass substrate may be used.
  • the bonding system 1 includes cassettes C W , C S , and C T that can accommodate, for example, a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T, respectively.
  • the loading / unloading station 2 for loading / unloading and the processing station 3 including various processing apparatuses for performing predetermined processing on the processing target wafer W, the supporting wafer S, and the overlapped wafer T are integrally connected. .
  • the loading / unloading station 2 is provided with a cassette mounting table 10.
  • the cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11.
  • the cassette mounting plates 11 are arranged in a line in the X direction (vertical direction in FIG. 1). These cassette mounting plates 11, cassettes C W to the outside of the interface system 1, C S, when loading and unloading the C T, a cassette C W, C S, can be placed on C T .
  • the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T.
  • the number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined.
  • One of the cassettes may be used for collecting defective wafers. That is, this is a cassette that can separate from a normal superposed wafer T a wafer in which a defect occurs in the joining of the processing target wafer W and the supporting wafer S due to various factors.
  • this is a cassette that can separate from a normal superposed wafer T a wafer in which a defect occurs in the joining of the processing target wafer W and the supporting wafer S due to various factors.
  • using a one cassette C T for the recovery of the fault wafer, and using the other cassette C T for the accommodation of a normal bonded wafer T among the plurality of cassettes C T, using a one cassette C T for the recovery of the fault wafer, and using the other cassette C T for the accommodation of a normal bonded wafer T.
  • a wafer transfer unit 20 is provided adjacent to the cassette mounting table 10.
  • the wafer transfer unit 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the X direction.
  • the wafer transfer device 22 is also movable in the vertical direction and around the vertical axis ( ⁇ direction), and adjusts the temperature of the cassettes C W , C S , and C T on each cassette mounting plate 11 and the processing station 3 described later.
  • the wafer W to be processed, the support wafer S, and the superposed wafer T can be transferred between the apparatus 30 and the transition apparatuses 31 and 32.
  • the processing station 3 includes a temperature adjusting device 30 for adjusting the temperature of the overlapped wafer T on the loading / unloading station 2 side (Y direction negative direction side in FIG. 1), a wafer W to be processed, a support wafer S, and a overlapped wafer T. Transition devices 31 and 32 are provided. The temperature control device 30 and the transition devices 31 and 32 are provided in two stages in this order from the bottom as shown in FIG.
  • bonding devices 40 and 41 that press and bond the wafer to be processed W and the support wafer S through an adhesive G are provided on the Y direction positive direction side of the transition devices 31 and 32. Yes.
  • the joining device 40 is disposed on the X direction negative direction side of the transition devices 31 and 32, and the joining device 41 is disposed on the X direction positive direction side of the transition devices 31 and 32.
  • positioning of a perpendicular direction and a horizontal direction can be set arbitrarily.
  • a first wafer transfer region 42 is formed in a region between the bonding devices 40 and 41 (X direction) and on the Y direction positive direction side of the transition devices 31 and 32.
  • a first wafer transfer device 43 is disposed in the first wafer transfer region 42.
  • the first wafer transfer device 43 has, for example, a transfer arm that can move around the vertical direction, horizontal direction (Y direction, X direction), and vertical axis.
  • the first wafer transfer device 43 moves in the first wafer transfer region 42, and is moved to the surrounding temperature adjustment device 30, transition devices 31 and 32, bonding devices 40 and 41, and transition devices 50 and 51 to be described later.
  • the wafer W to be processed, the support wafer S, and the superposed wafer T can be transferred.
  • Transition devices 50 and 51 for the wafer W to be processed and the support wafer S are provided on the Y direction positive direction side of the first wafer transfer region 42.
  • the transition devices 50 and 51 are provided in two stages in this order from the bottom as shown in FIG.
  • the transition devices 50 and 51 As shown in FIG. 1, on the negative side in the X direction of the transition devices 50 and 51, the position of the wafer to be processed W is adjusted, the position of the support wafer S is adjusted, and the front and back surfaces of the support wafer S are reversed.
  • a position adjusting device 52 is provided. Note that the transition devices 50 and 51 and the position adjusting device 52 may be provided integrally.
  • a coating device 60 that applies the adhesive G to the wafer W to be processed, and a heat treatment that heats the wafer W to be processed to which the adhesive G has been applied to a predetermined temperature.
  • Devices 61 to 66 are provided.
  • the coating device 60 is disposed on the X direction negative direction side of the transition devices 50 and 51, and the heat treatment devices 61 to 66 are disposed on the X direction positive direction side of the transition devices 50 and 51.
  • the heat treatment apparatuses 61 to 66 are arranged in two rows in the positive direction of the Y direction.
  • the heat treatment apparatuses 61 to 63 and the heat treatment apparatuses 64 to 66 are provided in three stages in this order from the bottom. Note that the number of coating devices 60 can be set arbitrarily, and a plurality of coating devices may be provided in the bonding system 1. Further, the number of the heat treatment apparatuses 61 to 66 and the arrangement in the vertical direction and the horizontal direction can be arbitrarily set.
  • a second wafer transfer area 67 is formed in the area between the coating apparatus 60 and the heat treatment apparatuses 61 to 66 (X direction) and on the Y direction positive direction side of the transition apparatuses 50 and 51.
  • a second wafer transfer device 68 is disposed in the wafer transfer region 90.
  • the second wafer transfer device 68 has, for example, a transfer arm that can move around the vertical direction, horizontal direction (Y direction, X direction), and vertical axis.
  • the second wafer transfer device 68 moves in the second wafer transfer region 67 and transfers the processing target wafer W and the supporting wafer S to the surrounding transition devices 50 and 51, the coating device 60, and the heat treatment devices 61 to 66. it can.
  • the joining apparatus 40 may have a housing (not shown) that houses components of the joining apparatus 40 described later, the illustration is omitted here.
  • the bonding apparatus 40 has a housing, a loading / unloading port for the processing target wafer W, the support wafer S, and the overlapped wafer T is formed on the side surface of the housing on the first wafer transfer region 42 side, and the opening / closing is open / closed. A shutter is provided.
  • the bonding apparatus 40 includes a first holding unit 100 that places and holds the wafer W to be processed on the upper surface, and a second holding unit 101 that holds the supporting wafer S by suction on the lower surface. is doing.
  • the first holding unit 100 is provided below the second holding unit 101 and is arranged to face the second holding unit 101. That is, the wafer W to be processed held by the first holding unit 100 and the support wafer S held by the second holding unit 101 are arranged to face each other.
  • the first holding unit 100 for example, an electrostatic chuck for electrostatically attracting the wafer W to be processed is used.
  • the first holding unit 100 is made of ceramic such as aluminum nitride ceramic having thermal conductivity.
  • the first holding unit 100 is connected to, for example, a DC high voltage power source 110. Then, an electrostatic force can be generated on the surface of the first holding unit 100 to electrostatically attract the wafer W to be processed onto the first holding unit 100.
  • the material of the first holding unit 100 is not limited to the present embodiment, and other ceramics such as silicon carbide ceramic and alumina ceramic may be used.
  • the surface of the first holding unit 100 may be insulated. When forming a layer, you may use metal materials, such as aluminum and stainless steel other than a ceramic, for example.
  • a first heating mechanism 111 that heats the wafer W to be processed is provided inside the first holding unit 100.
  • a heater is used inside the first holding unit 100.
  • the heating temperature of the wafer W to be processed by the first heating mechanism 111 is controlled by, for example, the control unit 350 described later.
  • a first cooling mechanism 112 is provided on the lower surface side of the first holding unit 100.
  • a copper cooling jacket is used for the first cooling mechanism 112. That is, a cooling medium, for example, a cooling gas flows through the first cooling mechanism 112, and the processing target wafer W is cooled by the cooling medium.
  • the first cooling temperature of the wafer W to be processed by the first cooling mechanism 112 is controlled by, for example, the control unit 350 described later.
  • the first cooling mechanism 112 is not limited to the present embodiment, and various configurations can be adopted as long as the processing target wafer W can be cooled.
  • the first cooling mechanism 112 may incorporate a cooling member such as a Peltier element.
  • a heat insulating plate 113 is provided on the lower surface side of the first cooling mechanism 112.
  • the heat insulating plate 113 prevents heat generated when the processing target wafer W is heated by the first heating mechanism 111 from being transmitted to the lower chamber 181 side described later.
  • silicon nitride is used for the heat insulating plate 113.
  • elevating pins 120 for supporting and elevating the wafer W or the overlapped wafer T from below are provided at, for example, three locations.
  • the elevating pin 120 can be moved up and down by the elevating drive unit 121.
  • the elevating drive unit 121 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw.
  • through holes 122 that penetrate the first holding unit 100 and the lower chamber 181 in the thickness direction are formed, for example, at three locations.
  • the elevating pin 120 is inserted through the through hole 122 and can protrude from the upper surface of the first holding unit 100.
  • the raising / lowering drive part 121 is provided in the lower part of the lower chamber 181 mentioned later.
  • the elevating drive unit 121 is provided on the support member 130.
  • an electrostatic chuck for electrostatically adsorbing the support wafer S is used.
  • a ceramic such as an aluminum nitride ceramic having thermal conductivity is used.
  • a DC high voltage power supply 140 is connected to the second holding unit 101. Then, an electrostatic force can be generated on the surface of the second holding unit 101, and the support wafer S can be electrostatically adsorbed on the second holding unit 101.
  • the material of the second holding unit 101 is not limited to the present embodiment, and other ceramics such as silicon carbide ceramic and alumina ceramic may be used, for example, and the surface of the second holding unit 101 may be insulated. When forming a layer, you may use metal materials, such as aluminum and stainless steel other than a ceramic, for example.
  • a second heating mechanism 141 for heating the support wafer S is provided inside the second holding unit 101.
  • a heater is used for the second heating mechanism 141.
  • a heater is used for the second heating mechanism 241.
  • the heating temperature of the wafer W to be processed by the second heating mechanism 141 is controlled by, for example, the control unit 350 described later.
  • a second cooling mechanism 142 is provided on the upper surface side of the second holding unit 101.
  • a copper cooling jacket is used for the second cooling mechanism 142. That is, a cooling medium, for example, a cooling gas flows through the second cooling mechanism 142, and the support wafer S is cooled by the cooling medium.
  • the second cooling temperature of the wafer W to be processed by the second cooling mechanism 142 is controlled by, for example, the control unit 350 described later.
  • the second cooling mechanism 142 is not limited to the present embodiment, and various configurations can be adopted as long as the second cooling mechanism 142 can be cooled.
  • the second cooling mechanism 142 may incorporate a cooling member such as a Peltier element.
  • the second holding unit 101 may have a heat insulating plate (not shown) provided on the upper surface side of the second cooling mechanism 142. This heat insulating plate prevents heat when the support wafer S is heated by the second heating mechanism 141 from being transmitted to the support plate 150 side described later.
  • the pressurizing mechanism 160 On the upper surface side of the second holding unit 101, a pressurizing mechanism 160 that presses the second holding unit 101 vertically downward via a support plate 150 is provided.
  • the pressurizing mechanism 160 includes a pressure vessel 161 provided so as to cover the processing target wafer W and the support wafer S, a fluid supply pipe 162 that supplies fluid, for example, compressed air, to the inside of the pressure vessel 161, and fluid to the inside.
  • a fluid supply source 163 has a fluid for storing and supplying a fluid to the fluid supply pipe 162.
  • the pressure vessel 161 is made of, for example, a stainless steel bellows that can expand and contract in the vertical direction.
  • the pressure vessel 161 has a lower surface fixed to the upper surface of the support plate 150 and an upper surface fixed to the lower surface of the support plate 164 provided above the second holding unit 101.
  • the fluid supply pipe 162 has one end connected to the pressure vessel 161 and the other end connected to the fluid supply source 163. Then, by supplying the fluid from the fluid supply pipe 162 to the pressure vessel 161, the pressure vessel 161 extends.
  • the pressure vessel 161 since the upper surface of the pressure vessel 161 and the lower surface of the support plate 164 are in contact with each other, the pressure vessel 161 extends only in the downward direction, and the second holding portion 101 provided on the lower surface of the pressure vessel 161 is moved downward. Can be pressed. Since the pressure vessel 161 has elasticity, even if there is a difference between the parallelism of the second holding unit 101 and the parallelism of the first holding unit 100, the pressure vessel 161 can absorb the difference. At this time, the inside of the pressure vessel 161 is pressurized by the fluid and can be pressed uniformly.
  • the planar shape of the pressure vessel 161 is the same as the planar shape of the wafer to be processed W and the support wafer S, and the diameter of the pressure vessel 161 is the same as the diameter of the wafer to be processed W, for example, 300 mm. Does not occur. Therefore, regardless of the parallelism of the first holding unit 100 and the second holding unit 101, the pressure vessel 161 presses the second holding unit 101 (the processing target wafer W and the support wafer S) uniformly in the surface. Can do. Adjustment of the pressure at the time of pressing the 2nd holding
  • the support plate 164 is preferably formed of a member having a strength that does not deform even when the pressure mechanism 160 receives a reaction force of a load applied to the second holding unit 101.
  • the 1st imaging part 170 which images the surface of the to-be-processed wafer W hold
  • a wide-angle CCD camera is used for each of the first imaging unit 170 and the second imaging unit 171.
  • the first imaging unit 170 and the second imaging unit 171 are configured to be movable in the vertical direction and the horizontal direction by a moving mechanism (not shown).
  • the joining apparatus 40 has a processing container 180 that can be sealed inside.
  • the processing container 180 contains the first holding unit 100, the second holding unit 101, the support plate 150, the pressure vessel 161, the support plate 164, the first imaging unit 170, and the second imaging unit 171 described above. To do.
  • the processing container 180 includes a lower chamber 181 that supports the first holding unit 100 and an upper chamber 182 that supports the second holding unit 101.
  • the upper chamber 182 is configured to be vertically movable by an elevating mechanism (not shown) such as an air cylinder.
  • a sealing material 183 is provided on the joint surface of the lower chamber 181 with the upper chamber 182 to maintain the airtightness inside the processing container 180.
  • an O-ring is used for the sealing material 183. Then, by bringing the lower chamber 181 and the upper chamber 182 into contact with each other as shown in FIG. 5, the inside of the processing container 180 is formed in a sealed space.
  • a plurality of, for example, five moving mechanisms 190 for moving the second holding unit 101 in the horizontal direction via the upper chamber 182 are provided around the upper chamber 182 as shown in FIG.
  • the moving mechanism 190 includes a cam 191 that contacts the upper chamber 182 and moves the second holding unit 101, and a cam 191 that rotates the cam 191 via the shaft 192, for example, a motor (not shown).
  • the cam 191 is provided eccentrically with respect to the central axis of the shaft 192. Then, by rotating the cam 191 by the rotation driving unit 193, the center position of the cam 191 with respect to the second holding unit 101 is moved, and the second holding unit 101 can be moved in the horizontal direction.
  • the lower chamber 181 is provided with a decompression mechanism 200 that decompresses the atmosphere in the processing vessel 180.
  • the decompression mechanism 200 includes an intake pipe 201 for sucking the atmosphere in the processing container 180 and a negative pressure generator 202 such as a vacuum pump connected to the intake pipe 201.
  • the position adjusting device 52 has a processing container 210 that can be closed inside.
  • a loading / unloading port (not shown) for the processing target wafer W and the supporting wafer S is formed on the side surface of the processing vessel 210 on the side of the transition devices 50 and 51, and an opening / closing shutter (not shown) is provided at the loading / unloading port. ing.
  • a holding arm 220 for holding the supporting wafer S and the processing target wafer W is provided inside the processing container 210 as shown in FIGS.
  • the holding arm 220 extends in the horizontal direction (X direction in FIGS. 7 and 8).
  • the holding arm 220 is provided with holding members 221 that hold the support wafer S and the wafer W to be processed, for example, at four locations.
  • the holding member 221 is configured to be movable in the horizontal direction with respect to the holding arm 220.
  • a notch 222 for holding the outer periphery of the support wafer S and the wafer W to be processed is formed. These holding members 221 can sandwich and hold the support wafer S and the wafer W to be processed.
  • the holding arm 220 is supported by a first drive unit 223 provided with, for example, a motor as shown in FIGS.
  • the holding arm 220 is rotatable about the horizontal axis and can move in the horizontal direction (X direction in FIGS. 7 and 8 and Y direction in FIGS. 7 and 9).
  • the first drive unit 223 may move the holding arm 220 in the horizontal direction by rotating the holding arm 220 around the vertical axis.
  • a second drive unit 224 including a motor or the like is provided below the first drive unit 223, for example.
  • the first driving unit 223 can move in the vertical direction along the support pillar 225 extending in the vertical direction.
  • the support wafer S and the wafer W to be processed held by the holding member 221 can be rotated around the horizontal axis and moved in the vertical direction and the horizontal direction by the first drive unit 223 and the second drive unit 224. it can.
  • the holding arm 220 of the present embodiment transports the support wafer S and the wafer W to be processed between the transition devices 50 and 51, but the support wafer between the transition devices 50 and 51 and the position adjustment device 52.
  • S, The wafer W to be processed may be transferred using a separately provided transfer arm.
  • a position adjusting mechanism 230 that adjusts the horizontal direction of the support wafer S and the wafer W to be processed held by the holding member 221 is supported by the support pillar 225 via the support plate 231.
  • the position adjustment mechanism 230 is provided adjacent to the holding arm 220.
  • the position adjusting mechanism 230 includes a base 232 and a detection unit 233 that detects the positions of the notch portions of the support wafer S and the wafer W to be processed.
  • the position adjustment mechanism 230 detects the positions of the notch portions of the support wafer S and the wafer W to be processed by the detection unit 233 while moving the support wafer S and the wafer W to be processed held in the holding member 221 in the horizontal direction.
  • the horizontal orientation of the support wafer S and the wafer W to be processed is adjusted by adjusting the position of the notch portion.
  • the coating device 60 has a processing container 240 that can be sealed inside.
  • a loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 240 on the second wafer transfer region 67 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port. .
  • a spin chuck 250 that holds and rotates the wafer W to be processed is provided at the center of the processing container 240.
  • the spin chuck 250 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W to be processed is provided on the upper surface, for example.
  • the wafer W to be processed can be sucked and held on the spin chuck 250 by suction from the suction port.
  • a chuck drive unit 251 provided with a motor or the like is provided below the spin chuck 250.
  • the spin chuck 250 can be rotated at a predetermined speed by the chuck driving unit 251.
  • the chuck driving unit 251 is provided with an elevating drive source such as a cylinder, for example, so that the spin chuck 250 can move up and down.
  • a cup 252 that receives and collects the liquid scattered or dropped from the wafer W to be processed.
  • a discharge pipe 253 for discharging the collected liquid
  • an exhaust pipe 254 for evacuating and exhausting the atmosphere in the cup 252.
  • a rail 260 extending along the Y direction is formed on the side of the cup 252 in the negative X direction (downward direction in FIG. 12).
  • the rail 260 is formed from the outside of the cup 252 on the Y direction negative direction (left direction in FIG. 12) side to the outside of the Y direction positive direction (right direction in FIG. 12) side.
  • An arm 261 is attached to the rail 260.
  • an adhesive nozzle 262 for supplying a liquid adhesive G to the wafer W to be processed is supported on the arm 261.
  • the arm 261 is movable on the rail 260 by a nozzle driving unit 263 shown in FIG.
  • the adhesive nozzle 262 can move from the standby portion 264 installed on the outer side of the cup 252 on the positive side in the Y direction to above the central portion of the wafer W to be processed in the cup 252 and further to the wafer W to be processed. It can move in the radial direction of the wafer W to be processed.
  • the arm 261 can be moved up and down by a nozzle driving unit 263, and the height of the adhesive nozzle 262 can be adjusted.
  • a supply pipe 265 for supplying the adhesive G to the adhesive nozzle 262 is connected to the adhesive nozzle 262 as shown in FIG.
  • the supply pipe 265 communicates with an adhesive supply source 266 that stores the adhesive G therein.
  • the supply pipe 265 is provided with a supply device group 267 including a valve for controlling the flow of the adhesive G, a flow rate adjusting unit, and the like.
  • a back rinse nozzle (not shown) for injecting the cleaning liquid toward the back surface of the wafer W to be processed, that is, the non-bonding surface W N may be provided below the spin chuck 250.
  • the non-bonded surface W N of the wafer to be processed W and the outer peripheral portion of the wafer to be processed W are cleaned by the cleaning liquid sprayed from the back rinse nozzle.
  • the heat treatment apparatus 61 has a processing container 270 whose inside can be closed.
  • a loading / unloading port (not shown) for the processing target wafer W is formed on the side surface of the processing container 270 on the second wafer transfer region 67 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port. .
  • a gas supply port 271 for supplying an inert gas such as nitrogen gas is formed inside the processing container 270 on the ceiling surface of the processing container 270.
  • a gas supply pipe 273 communicating with the gas supply source 272 is connected to the gas supply port 271.
  • the gas supply pipe 273 is provided with a supply device group 274 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like.
  • a suction port 275 for sucking the atmosphere inside the processing container 270 is formed on the bottom surface of the processing container 270.
  • An intake pipe 277 communicating with a negative pressure generating device 276 such as a vacuum pump is connected to the intake port 275.
  • a heating unit 280 that heat-processes the processing target wafer W and a temperature control unit 281 that controls the temperature of the processing target wafer W are provided.
  • the heating unit 280 and the temperature adjustment unit 281 are arranged side by side in the Y direction.
  • the heating unit 280 includes an annular holding member 291 that houses the hot plate 290 and holds the outer periphery of the hot plate 290, and a substantially cylindrical support ring 292 that surrounds the outer periphery of the holding member 291.
  • the hot plate 290 has a thick, substantially disk shape, and can place and heat the wafer W to be processed. Further, the heating plate 290 includes a heating mechanism 293, for example. For the heating mechanism 293, for example, a heater is used. The heating temperature of the hot plate 290 is controlled by, for example, the control unit 350 described later, and the processing target wafer W placed on the hot plate 290 is heated to a predetermined temperature.
  • elevating pins 300 for supporting the wafer W to be processed from below and elevating it are provided below.
  • the elevating pin 300 can be moved up and down by the elevating drive unit 301.
  • through holes 302 that penetrate the hot plate 290 in the thickness direction are formed at, for example, three locations.
  • the elevating pin 300 is inserted through the through hole 302 and can protrude from the upper surface of the hot plate 290.
  • the temperature adjustment unit 281 has a temperature adjustment plate 310.
  • the temperature control plate 310 has a substantially square flat plate shape, and the end surface on the heat plate 290 side is curved in an arc shape.
  • Two slits 311 along the Y direction are formed in the temperature adjustment plate 310.
  • the slit 311 is formed from the end surface of the temperature adjustment plate 310 on the hot plate 290 side to the vicinity of the center of the temperature adjustment plate 310.
  • the slit 311 can prevent the temperature adjustment plate 310 from interfering with the elevation pins 300 of the heating unit 280 and the elevation pins 320 of the temperature adjustment unit 281 described later.
  • the temperature adjustment plate 310 includes a temperature adjustment member (not shown) such as a Peltier element.
  • the cooling temperature of the temperature adjustment plate 310 is controlled by, for example, a control unit 350 described later, and the processing target wafer W placed on the temperature adjustment plate 310 is cooled to a predetermined temperature.
  • the temperature adjustment plate 310 is supported by the support arm 312 as shown in FIG.
  • a drive unit 313 is attached to the support arm 312.
  • the drive unit 313 is attached to a rail 314 extending in the Y direction.
  • the rail 314 extends from the temperature adjustment unit 281 to the heating unit 280. With this driving unit 313, the temperature adjustment plate 310 can move between the heating unit 280 and the temperature adjustment unit 281 along the rail 314.
  • the elevating pin 320 can be moved up and down by the elevating drive unit 321.
  • the elevating pin 320 is inserted through the slit 311 and can protrude from the upper surface of the temperature adjustment plate 310.
  • the configuration of the heat treatment apparatuses 62 to 66 is the same as that of the heat treatment apparatus 61 described above, and a description thereof will be omitted.
  • the temperature adjusting device 30 has substantially the same configuration as the heat treatment device 61 described above, and a temperature adjusting plate is used instead of the hot plate 290.
  • a cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature.
  • the temperature control part 281 of the heat processing apparatus 61 mentioned above is abbreviate
  • the control unit 350 is a computer, for example, and has a program storage unit (not shown).
  • the program storage unit stores a program for controlling processing of the processing target wafer W, the supporting wafer S, and the overlapped wafer T in the bonding system 1.
  • the program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize the below-described joining process in the joining system 1.
  • the program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 350 from the storage medium H.
  • FIG. 15 is a flowchart showing an example of main steps of the joining process.
  • a cassette C W housing a plurality of the processed the wafer W, the cassette C S accommodating a plurality of support wafer S, and an empty cassette C T is a predetermined cassette mounting plate 11 of the carry-out station 2 Placed.
  • the wafer W to be processed in the cassette CW is taken out by the wafer transfer device 22 and transferred to the transition device 31 of the processing station 3.
  • the wafer W to be processed is transported with its non-bonding surface W N facing downward.
  • the wafer W to be processed is transferred to the transition device 50 by the first wafer transfer device 43 and then transferred to the coating device 60 by the second wafer transfer device 68.
  • the wafer W to be processed carried into the coating device 60 is transferred from the second wafer transfer device 68 to the spin chuck 250 and sucked and held. At this time, the non-bonding surface W N of the wafer W is held by suction.
  • the adhesive nozzle 262 of the standby unit 264 is moved above the central portion of the wafer W to be processed by the arm 261. Thereafter, while rotating the wafer W by the spin chuck 250, and supplies the adhesive G from the adhesive nozzles 262 on the bonding surface W J of wafer W. Supplied adhesive G is diffused into the entire surface of the bonding surface W J of wafer W by the centrifugal force, the adhesive G on the bonding surface W J of the wafer W is applied (step of FIG. 15 A1 ).
  • the wafer W to be processed is transferred to the heat treatment apparatus 61 by the second wafer transfer apparatus 68.
  • the inside of the heat treatment apparatus 61 is maintained in an inert gas atmosphere.
  • the wafer W to be processed is transferred from the second wafer transfer apparatus 68 to the lift pins 320 that have been lifted and waited in advance. Subsequently, the elevating pins 320 are lowered, and the processing target wafer W is placed on the temperature adjustment plate 310.
  • the temperature adjusting plate 310 is moved along the rails 314 to above the heat plate 290 by the driving unit 313, and the wafer W to be processed is transferred to the lift pins 300 that have been lifted and waited in advance. Thereafter, the lift pins 300 are lowered, and the wafer W to be processed is placed on the hot plate 290. Then, the wafer W to be processed on the hot plate 290 is heated to a predetermined temperature, for example, 100 ° C. to 300 ° C. (step A2 in FIG. 15). By performing the heating by the hot plate 290, the adhesive G on the wafer W to be processed is heated, and the adhesive G is cured.
  • a predetermined temperature for example, 100 ° C. to 300 ° C.
  • the elevating pin 300 is raised, and the temperature adjusting plate 310 is moved above the hot plate 290.
  • the wafer W to be processed is transferred from the lift pins 300 to the temperature adjustment plate 310, and the temperature adjustment plate 310 moves to the second wafer transfer region 67 side.
  • the temperature of the wafer W to be processed is adjusted to a predetermined temperature, for example, 23 ° C. which is normal temperature.
  • the wafer W to be processed is transferred to the transition device 50 by the second wafer transfer device 68.
  • the wafer W to be processed accommodated in the transition device 50 is transferred to the position adjusting device 52 by the holding arm 220 of the position adjusting device 52. Subsequently, the wafer W to be processed is moved to the position adjusting mechanism 230 while being held by the holding arm 220. Then, the position adjustment mechanism 230 adjusts the position of the notch portion of the wafer W to be processed to adjust the horizontal direction of the wafer W to be processed (step A3 in FIG. 15).
  • the wafer W to be processed is transferred to the transition device 51 by the holding arm 220 and then transferred to the bonding device 40 by the first wafer transfer device 43.
  • the upper chamber 182 is located above the lower chamber 181, the upper chamber 182 and the lower chamber 181 are not in contact with each other, and the inside of the processing container 180 is not formed in a sealed space.
  • the to-be-processed wafer W conveyed by the joining apparatus 40 is mounted in the 1st holding
  • the supporting wafer S is processed following the processing target wafer W.
  • the support wafer S is transferred to the transition device 50 by the first wafer transfer device 43 and then transferred to the position adjusting device 52 by the holding arm 220. Note that the process of transporting the support wafer S to the position adjustment device 52 is the same as that in the above embodiment, and thus the description thereof is omitted.
  • the support wafer S transferred to the position adjustment device 52 is moved to the position adjustment mechanism 230 while being held by the holding arm 220. Then, the position adjustment mechanism 230 adjusts the position of the notch portion of the support wafer S to adjust the horizontal direction of the support wafer S (step A5 in FIG. 15).
  • the support wafer S whose horizontal direction is adjusted is moved in the horizontal direction from the position adjustment mechanism 230 and moved upward in the vertical direction, and then the front and back surfaces thereof are reversed (step A6 in FIG. 15). That is, the bonding surface S J of the support wafer S is directed downward.
  • the wafer W to be processed is transferred to the transition device 51 by the holding arm 220 and then transferred to the bonding device 40 by the first wafer transfer device 43.
  • the support wafer S transferred to the bonding apparatus 40 is sucked and held by the second holding unit 101 (step A7 in FIG. 15).
  • the supporting wafer S is held in a state where the bonding surfaces S J is directed downward of the support wafer S.
  • the horizontal position adjustment between the processing target wafer W held by the first holding unit 100 and the support wafer S held by the second holding unit 101 is performed.
  • a plurality of predetermined reference points for example, four or more reference points, are formed on the surface of the wafer W to be processed and the surface of the support wafer S.
  • the first imaging unit 170 is moved in the horizontal direction, and the surface of the processing target wafer W is imaged.
  • the second imaging unit 171 is moved in the horizontal direction, and the surface of the support wafer S is imaged.
  • the position of the reference point of the processing target wafer W displayed in the image captured by the first imaging unit 170 and the position of the reference point of the support wafer S displayed in the image captured by the second imaging unit 171 The horizontal position (including the horizontal direction) of the support wafer S is adjusted by the moving mechanism 190 so that the two match.
  • the cam 191 is rotated by the rotation driving unit 193 to move the second holding unit 101 in the horizontal direction via the upper chamber 182, and the horizontal position of the support wafer S is adjusted.
  • the horizontal position of the wafer to be processed W and the support wafer S is adjusted (step A8 in FIG. 15).
  • the upper chamber 182 is moved by a moving mechanism (not shown). Lower. Then, as shown in FIG. 5, the upper chamber 182 and the lower chamber 181 are brought into contact with each other, and the inside of the processing container 180 constituted by the upper chamber 182 and the lower chamber 181 is formed in a sealed space. At this time, a minute gap is formed between the processing target wafer W held by the first holding unit 100 and the support wafer S held by the second holding unit 101. That is, the wafer W to be processed and the support wafer S are not in contact with each other.
  • the atmosphere in the processing container 180 is sucked by the decompression mechanism 200, and the inside of the processing container 180 is decompressed to a vacuum state (step A9 in FIG. 15).
  • the inside of the processing container 180 is depressurized to a predetermined vacuum pressure, for example, 10.0 Pa or less.
  • compressed air is supplied to the pressure vessel 161, and the inside of the pressure vessel 161 is set to a predetermined pressure, for example, 1.00001 MPa.
  • a predetermined pressure for example, 1.00001 MPa.
  • the inside of the processing vessel 180 is maintained in a vacuum state, and the pressure vessel 161 is disposed in a vacuum atmosphere in the processing vessel 180.
  • the pressure pressed downward by the pressurizing mechanism 160 that is, the pressure transmitted from the pressure vessel 161 to the second holding unit 101 is the differential pressure between the pressure in the pressure vessel 161 and the pressure in the processing vessel 180.
  • 1.0 MPa That is, the pressure at which the second holding unit 101 is pressed by the pressurizing mechanism 160 is smaller than a predetermined vacuum pressure.
  • the second holding unit 101 is pressed downward by the pressure mechanism 160, and the entire surface of the wafer W to be processed and the entire surface of the support wafer S come into contact with each other.
  • the wafer to be processed W and the support wafer S come into contact with each other, the wafer to be processed W and the support wafer S are sucked and held by the first holding unit 100 and the second holding unit 101, respectively.
  • the positional deviation of the wafer S does not occur.
  • the pressurizing mechanism 160 presses the processing target wafer W and the supporting wafer S over the entire surface.
  • the processing target wafer W and the supporting wafer S are heated at a predetermined temperature, for example, 100 ° C. to 400 ° C. by the heating mechanisms 111 and 141.
  • a predetermined temperature for example, 100 ° C. to 400 ° C.
  • the pressurizing mechanism 160 while heating the wafer to be processed W and the support wafer S at a predetermined temperature, the wafer to be processed W and the support wafer S are brought into contact with each other. It is more strongly bonded and bonded (step A10 in FIG. 27).
  • step A10 since the inside of the processing container 180 is maintained in a vacuum state, even if the wafer to be processed W and the support wafer S are brought into contact with each other, voids between the wafer to be processed W and the support wafer S are not generated. Occurrence can be suppressed.
  • the second holding unit 101 is pressed at 1.0 MPa by the pressurizing mechanism 160.
  • the pressure at the time of pressing is the type of the adhesive G or the type of device on the wafer W to be processed. It is set according to etc.
  • the superposed wafer T in which the processing target wafer W and the support wafer S are bonded is transferred to the temperature adjustment device 30 by the first wafer transfer device 43.
  • the temperature of the superposed wafer T is adjusted to a predetermined temperature, for example, 23 ° C., which is normal temperature (step A11 in FIG. 27).
  • a predetermined temperature for example, 23 ° C., which is normal temperature (step A11 in FIG. 27).
  • bonded wafer T is transported to the cassette C T of predetermined cassette mounting plate 11 by the wafer transfer apparatus 22 of the carry-out station 2. In this way, a series of bonding processing of the processing target wafer W and the supporting wafer S is completed.
  • one position adjusting device 52 is provided for the plurality of joining devices 40, 41 in the joining system 1, that is, the position adjusting device 52 is common to the plurality of joining devices 40, 41. It has become. For this reason, compared with the case where the joining apparatus and the position adjusting device are provided in a one-to-one manner as in the prior art, the area occupied by the joining system 1 can be reduced by the number of the position adjusting devices 52 reduced. Accordingly, the manufacturing cost of the joining system 1 can be reduced.
  • the wafer to be processed W and the supporting wafer are processed by the first imaging unit 170 and the second imaging unit 171 in step A8.
  • the horizontal position with S is adjusted with high accuracy.
  • the position adjustment device 52 does not require position adjustment with such high accuracy. From this point of view, it is not necessary to provide the bonding device and the position adjusting device on a one-to-one basis as in the prior art, and the position adjusting device 52 can be provided in common for the plurality of bonding devices 40 and 41.
  • the bonding system 1 includes the coating device 60, the heat treatment devices 61 to 66, the position adjusting device 52, the bonding devices 40 and 41, and the temperature adjusting device 30, the steps A1 to A11 are performed in the one bonding system 1. It is possible to appropriately perform a series of joining processes of the processing target wafer W and the supporting wafer S.
  • a series of bonding processes of steps A1 to A11 can be performed on a plurality of wafers W to be processed and a plurality of support wafers S in parallel.
  • the bonding system 1 is provided with a plurality of bonding apparatuses 40 and 41, the bonding of the processes A8 to A10 can be performed in parallel to the plurality of wafers W to be processed and the plurality of support wafers S. Therefore, the throughput of the bonding process between the processing target wafer W and the supporting wafer S can be improved.
  • the temperature adjusting device 30 for adjusting the temperature of the superposed wafer T is provided in the bonding system 1, but the temperature of the superposed wafer T may be adjusted by the heat treatment devices 61 to 66. In such a case, the temperature control device 30 can be omitted.
  • the processing target wafer W is transported to the position adjusting device 52, and the horizontal direction of the processing target wafer W is determined. You may adjust the direction. Since the position adjustment of the wafer W to be processed in the position adjusting device 52 is the same as that in the step A3, the description thereof is omitted.
  • the adhesive G can be uniformly applied to the processing target wafer W, and the processing target is processed in the subsequent process A2.
  • the wafer W can be heat-treated uniformly in the surface. Therefore, a series of joining processes in the joining system 1 can be performed more appropriately.
  • the unnecessary adhesive G protruding from the outer periphery of the wafer to be processed W is removed from the wafer W to be processed in step A2, and the outer periphery is cleaned.
  • An outer peripheral cleaning device may be provided. This outer peripheral cleaning apparatus is provided, for example, in the lower stage of the heat treatment apparatuses 61 to 66.
  • the outer peripheral cleaning device 400 includes a processing container 410 capable of sealing the inside.
  • a loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 410 on the second wafer transfer region 67 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port. .
  • a spin chuck 420 that holds and rotates the wafer W to be processed is provided at the center of the processing container 410.
  • the spin chuck 420 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W to be processed is provided on the upper surface, for example.
  • the wafer W to be processed can be sucked and held on the spin chuck 420 by suction from the suction port.
  • a chuck drive unit 421 provided with a motor or the like is provided below the spin chuck 420.
  • the spin chuck 420 can be rotated at a predetermined speed by the chuck driving unit 421.
  • the chuck driving unit 421 is provided with an elevating drive source such as a cylinder, and the spin chuck 420 is movable up and down.
  • the chuck driving unit 421 is attached to a rail 422 extending along the Y direction.
  • the spin chuck 420 is movable along the rail 422 by a chuck driving unit 421.
  • a solvent supply unit 430 that supplies a solvent for the adhesive G is provided on the side of the spin chuck 420.
  • the solvent supply unit 430 is fixed to the processing container 410 by a support member (not shown).
  • the solvent supply unit 430 supplies the solvent of the adhesive G to the outer adhesive GE that protrudes from the outer peripheral portion of the processing target wafer W as shown in FIG.
  • the solvent supply unit 430 includes an upper nozzle 431 disposed above the wafer W to be processed and a lower nozzle 432 disposed below the wafer W to be processed.
  • the upper nozzle 431 includes a ceiling part 431a and a side wall part 431b, and is provided so as to cover the upper part of the outer peripheral part of the wafer W to be processed.
  • the lower nozzle 432 includes a bottom part 432a and a side wall part 432b, and is provided so as to cover the lower part of the outer peripheral part of the wafer W to be processed.
  • the solvent supply unit 430 has a substantially rectangular parallelepiped shape as shown in FIGS. Further, the side surface of the solvent supply unit 430 on the side of the spin chuck 420 is opened, and the outer peripheral portion of the processing target wafer W held by the spin chuck 420 is inserted into the opening.
  • the supply port 434 is formed for supplying a solvent of the adhesive G.
  • the upper nozzle 431 and the lower nozzle 432 are connected to a supply pipe 435 that supplies the adhesive G solvent to the upper nozzle 431 and the lower nozzle 432.
  • the supply pipe 435 communicates with a solvent supply source 436 that stores the solvent of the adhesive G therein.
  • the supply pipe 435 is provided with a supply device group 437 including a valve for controlling the flow of the solvent of the adhesive G, a flow rate adjusting unit, and the like.
  • an organic thinner is used as the solvent for the adhesive G.
  • a discharge pipe 440 is provided for exhausting the atmosphere of the region.
  • the discharge pipe 440 is connected to the ejector 441.
  • a cup (not shown) that receives and collects the liquid scattered or dropped from the wafer W to be processed is provided around the spin chuck 420 and outside the solvent supply unit 430. It may be done.
  • the configuration of this cup is the same as the configuration of the cup 252 in the coating apparatus 60.
  • the spin chuck 420 is moved along the rail 422, but the solvent supply unit 430 is moved in the horizontal direction (Y direction in FIGS. 17 and 18). May be.
  • the wafer W to be processed that has been heat-treated in step A2 is transferred to the outer peripheral cleaning device 400 by the second wafer transfer device 68.
  • the wafer W to be processed transferred to the outer peripheral cleaning device 400 is transferred from the second wafer transfer device 68 to the spin chuck 420 and sucked and held.
  • the non-bonding surface W N of the wafer W is held by suction.
  • the spin chuck 420 is retracted to a position where the processing target wafer W does not collide with the solvent supply unit 430.
  • the spin chuck 420 is lowered to a predetermined position, the spin chuck 420 is further moved in the horizontal direction toward the solvent supply unit 430, so that the outer peripheral portion of the processing target wafer W is moved to the upper nozzle in the solvent supply unit 430. 431 and the lower nozzle 432 are inserted. At this time, the wafer W to be processed is located in the middle between the upper nozzle 431 and the lower nozzle 432.
  • an inspection inside the overlapped wafer T and an inspection of the bonded state of the overlapped wafer T are performed on the overlapped wafer T bonded in step A10 and temperature-controlled in step A11.
  • An inspection device may be provided. This inspection device is provided in the upper stage of the transition device 32, for example.
  • the inspection apparatus 450 has a processing container 460.
  • a loading / unloading port (not shown) for the overlapped wafer T is formed on the side surface on the first wafer transfer region 42 side and the side surface on the loading / unloading station 2 side of the processing container 460, respectively. Not shown).
  • the elevating pins 470 are provided on the support member 471 at, for example, three locations.
  • the elevating pin 470 is movable up and down by an elevating drive unit 472 provided with, for example, a motor.
  • a first holding unit 480 that holds the back surface of the overlapped wafer T is provided inside the processing container 460.
  • the first holding portion 480 has four support members 481 to 484 having a substantially rectangular shape in plan view. These support members 481 to 484 extend in the direction in which adjacent support members are orthogonal to each other in plan view. That is, the support members 481 and 483 extend in the Y direction, and the support members 482 and 484 extend in the X direction.
  • the support members 481 to 294 may be referred to as a first support member 481, a second support member 482, a third support member 483, and a fourth support member 484, respectively.
  • overlapped wafer T is held in the first holding portion 480 so that the center thereof is located between the first support member 481 and the second support member 482.
  • a notch 485 is formed between the first support member 481 and the second support member 482 so that 1/4 of the back surface of the overlapped wafer T is exposed.
  • the overlapped wafer T exposed from the notch 485 may be referred to as overlapped wafer T n (n is an integer of 1 to 4).
  • a holding member 486 for holding the back surface of the overlapped wafer T is formed on the tip portion of each of the support members 481 to 484.
  • a resin O-ring may be used, or a support pin may be used.
  • the holding member 486 holds the back surface of the overlapped wafer T by the frictional force between the holding member 486 and the back surface of the overlapped wafer T.
  • the first holding unit 480 is provided with a driving unit 491 via a member 490.
  • the drive unit 491 incorporates a motor (not shown), for example.
  • a rail 492 extending along the X direction is provided on the bottom surface of the processing container 460.
  • the drive unit 491 is attached to the rail 492.
  • the first holding unit 480 (driving unit 491) joins the overlapped wafer T by a transfer position P1 for transferring the overlapped wafer T along the rail 492 and the lift pin 470 and a displacement meter 540 described later. It is possible to move between the inspection position P2 for inspecting the state.
  • a second holding unit 500 that holds and rotates (rotates) the superposed wafer T is provided.
  • the second holding unit 500 is provided at the inspection position P2 described above.
  • the second holding unit 500 has a horizontal upper surface, and a suction port (not shown) for sucking the overlapped wafer T, for example, is provided on the upper surface.
  • the superposed wafer T can be sucked and held on the second holding unit 500 by suction from the suction port.
  • the second holding unit 500 is provided with a driving unit 501 provided with, for example, a motor.
  • the second holding unit 500 can be rotated (turned) by the driving unit 501.
  • the drive unit 501 is provided with an elevating drive source such as a cylinder, for example, and the second holding unit 500 is movable up and down. Note that the second holding unit 500 does not interfere with the first holding unit 480 even if the second holding unit 500 is moved up and down while the first holding unit 480 is located at the inspection position P2. .
  • an infrared irradiation unit 510 that irradiates infrared rays onto the back surface (overlapping wafer T n ) exposed from the notch 485 in the overlapping wafer T of the first holding unit 480 is provided.
  • the infrared irradiation unit 510 is disposed between the delivery position P1 and the inspection position P2 and below the first holding unit 480 and the second holding unit 500.
  • the infrared irradiation unit 510 extend in the long direction Y than the width of at least bonded wafer T n.
  • the wavelength of infrared rays emitted from the infrared irradiation unit 510 is 1100 to 2000 nm. Infrared light having such a wavelength passes through the superposed wafer T.
  • the infrared rays irradiated from the infrared irradiation unit 510 are received, and the superposed wafer T held by the first holding unit 480 is divided and imaged for each back surface exposed by the notch 485.
  • An imaging unit 520 is provided. That is, the imaging unit 520 images the bonded wafer T n.
  • an infrared camera is used for the imaging unit 520.
  • the imaging unit 520 is disposed on the negative side in the X direction from the inspection position P2, that is, on the negative end in the X direction of the processing container 460 and above the first holding unit 480 and the second holding unit 500. .
  • the imaging unit 520 is supported by the support member 521.
  • a control unit 350 is connected to the imaging unit 520. Bonded wafer T n of the image captured by the imaging unit 520 is output to the control unit 350, it is synthesized in the bonded wafer T entire image in the control unit 350.
  • direction conversion units 530 and 531 that change the direction of the infrared traveling path between the infrared irradiation unit 510 and the imaging unit 520 are provided.
  • the direction conversion units 530 and 531 are arranged to face each other on the delivery position P1 side (X direction positive direction side) from the infrared irradiation unit 510.
  • the first direction changing unit 530 is disposed below the first holding unit 480 and the second holding unit 500, and the second direction changing unit 531 is above the first holding unit 480 and the second holding unit 500. Is arranged.
  • the direction changing units 530 and 531 are provided to extend in the Y direction in the same manner as the infrared irradiation unit 510 described above. Note that the second direction changing portion 531 is supported by a support member 532 extending in the Y direction.
  • a first reflecting mirror 533 is provided inside the first direction changing section 530.
  • the first reflecting mirror 533 is provided with an inclination of 45 degrees from the horizontal direction. Infrared rays from the infrared irradiation unit 510 are reflected by the first reflecting mirror 533 and travel vertically upward.
  • a second reflecting mirror 534 is provided inside the second direction changing portion 531.
  • the second reflecting mirror 534 is provided with an inclination of 45 degrees from the horizontal direction.
  • the infrared rays from the first direction changing unit 530 are reflected by the second reflecting mirror 534 and travel in the horizontal direction.
  • a cylindrical lens 535 that collects infrared rays irradiated on the superposed wafer T is provided between the infrared irradiation unit 510 and the first direction changing unit 530. Further, a diffusion plate 536 that makes the cylindrical lens 535 uniform within the wafer surface of the superposed wafer T is provided on the upper surface of the first direction changing portion 530.
  • the infrared light irradiated from the infrared irradiation unit 510 is transmitted through the superposed wafer T via the cylindrical lens 535, the first reflecting mirror 533, and the diffusion plate 536, and is further imaged via the second reflecting mirror 534.
  • Part 520 is taken in.
  • a displacement meter 540 for measuring the displacement of the outer surface of the overlapped wafer T held by the second holding unit 500 is provided as shown in FIGS.
  • the displacement meter 540 is provided on the X direction negative direction side from the inspection position P2.
  • the displacement meter 540 is not particularly limited as long as it measures the displacement of the outer surface of the overlapped wafer T. In the present embodiment, for example, a laser displacement meter is used.
  • the displacement meter 540 irradiates the outer surfaces of the processing target wafer W and the supporting wafer S constituting the superposed wafer T with laser light, receives the reflected light, and receives the processing target wafer W and the supporting wafer S. Measure the displacement of the outer surface of the. Then, while rotating the superposed wafer T by the second holding unit 500, laser light is irradiated from the displacement meter 540 to the outer surfaces of the processing target wafer W and the supporting wafer S. Then, the displacement of the entire outer surface of the processing target wafer W and the supporting wafer S is measured, and the positional deviation between the processing target wafer W and the supporting wafer S is inspected.
  • the displacement meter 540 also measures the positional deviation between the notch portion of the wafer W to be processed and the notch portion of the support wafer S. In such a case, not only the horizontal displacement of the wafer to be processed W and the support wafer S but also the circumferential displacement around the vertical axis is inspected.
  • a position detection mechanism 541 for detecting the position of the overlapped wafer T held by the second holding unit 500 is provided inside the processing container 460 as shown in FIGS.
  • the position detection mechanism 541 is provided along the third support member 483 and the fourth support member 484 of the first holding unit 480.
  • the position detection mechanism 541 has, for example, a CCD camera (not shown), and detects the position of the notch portion of the overlapped wafer T held by the second holding unit 500.
  • the position of the notch portion of the superposed wafer T can be adjusted by detecting the position of the notch portion by the position detection mechanism 541 while rotating the second holding portion 500.
  • the overlapped wafer T bonded in step A10 and temperature-controlled in step A11 is transferred to the inspection device 450 by the second wafer transfer device 68.
  • the overlapped wafer T transferred to the inspection device 450 is transferred from the second wafer transfer device 68 to the lift pins 470 that have been raised in advance.
  • maintenance part 480 is standing by below the raising / lowering pin 470 in the delivery position P1.
  • the elevating pins 470 are lowered, and the overlapped wafer T is transferred from the elevating pins 470 to the first holding unit 480.
  • the first holding unit 480 is moved from the delivery position P1 to the inspection position P2.
  • the second holding unit 500 is raised, and the overlapped wafer T is transferred from the first holding unit 480 to the second holding unit 500.
  • laser light is irradiated from the displacement meter 540 to the processing target wafer W and the outer surface of the supporting wafer S from the displacement meter 540 while rotating the second holding unit 500.
  • the displacement meter 540 receives the outer surface of the wafer to be processed W and the support wafer S, and measures the displacement of the outer surface of the wafer to be processed W and the support wafer S.
  • the overlapped wafer T is rotated by at least one rotation by the second holding unit 500. Then, the displacement of the entire outer surface of the wafer to be processed W and the support wafer S is measured, and the positional deviation between the wafer to be processed W and the support wafer S (bonded state of the overlapped wafer T) is inspected.
  • the position of the notch portion is detected by the position detection mechanism 541 while further rotating the second holding portion 500. And the position of the notch part of the superposition
  • the second holding portion 500 is lowered, and the overlapped wafer T is delivered from the second holding portion 500 to the first holding portion 480.
  • the first holding unit 480 is moved from the inspection position P ⁇ b> 2 to the delivery position P ⁇ b> 1 side in a state where infrared rays are irradiated from the infrared irradiation unit 510 toward the first direction changing unit 530. Then, when the overlapped wafer T held by the first holding portion 480 passes above the first direction changing portion 530, the overlapped wafer T exposed from the notch portion 485 is removed from the first direction changing portion 530. Infrared rays are transmitted. The direction of the transmitted infrared light is converted by the second direction conversion unit 531 and is taken into the imaging unit 520.
  • the imaging unit 520 captures an image of the overlapped wafer T 1 exposed from the notch 485, that is, 1 ⁇ 4 of the overlapped wafer T.
  • bonded wafer T 1 by the image pickup unit 520 is imaged, to subsequently move the first holding portion 480 to the inspection position P2. Then, the second holding unit 500 is raised, and the overlapped wafer T is delivered from the first holding unit 480 to the second holding unit 500. Thereafter, the second holding portion 500 is 90 degrees rotation such that bonded wafer T 2 exposed from the cutout portion 485.
  • the second holding unit 500 is lowered, and the overlapped wafer T is delivered from the second holding unit 500 to the first holding unit 480. Then, the overlapped wafer T ⁇ b > 2 is imaged by the imaging unit 520.
  • bonded wafer T remaining bonded wafer T 3 and bonded wafer T 4 is imaged by the imaging section 520.
  • the images of the superposed wafers T 1 to T 4 divided and imaged in four times in this manner are output from the imaging unit 520 to the control unit 350.
  • the images of the superposed wafers T 1 to T 4 are synthesized, and an image of the whole superposed wafer T is obtained. Then, based on the image of the entire overlapped wafer T, inspection of voids inside the overlapped wafer T is performed.
  • the inspection apparatus 450 can inspect the inside of the overlapped wafer T and inspect the bonding state of the overlapped wafer T, the processing conditions in the bonding system 1 are corrected based on the inspection result. Can do. Therefore, the wafer W to be processed and the support wafer S can be bonded more appropriately.
  • the inspection apparatus 450 of the above-described embodiment two inspections, the inspection inside the overlapped wafer T and the inspection of the bonding state of the overlapped wafer T, are performed, but only one of the inspections may be performed.
  • each processing apparatus in the joining system 1 of the above embodiment are not limited to the form shown in FIG. 1 and can be arbitrarily set.
  • the number of the coating apparatus 60 and the heat treatment apparatuses 61 to 66 is not limited to the above embodiment, and the coating apparatus 600 and the heat treatment apparatus 601 may be further added as shown in FIG.
  • the coating devices 60 and 600 are arranged in two rows in the Y direction.
  • the heat treatment apparatuses 61 to 66, 601 are also arranged in three rows in the Y direction. Further, a plurality of heat treatment apparatuses 601 may be stacked in the vertical direction.
  • the arrangement of the bonding apparatuses 40 and 41 and the first wafer transfer area 42 and the coating apparatus 60, the heat treatment apparatuses 61 to 66 and the second wafer transfer area 67 may be changed.
  • the bonding apparatuses 40 and 41 and the first wafer transfer region 42 are arranged on the Y direction positive direction side of the transition apparatuses 50 and 51.
  • the coating apparatus 60, the heat treatment apparatuses 61 to 66, and the second wafer transfer area 67 are disposed between the transition apparatuses 31 and 32 and the transition apparatuses 50 and 51.
  • two coating devices 60 are provided.
  • the temperature control device 30 may be provided by being stacked on the transition devices 31 and 32, or may be provided by being stacked on the transition devices 50 and 51. Further, the inspection device 450 may be provided by being stacked on any of the transition devices 31 and 32, the coating device 60, the heat treatment devices 61 to 66, or the transition devices 50 and 51.
  • a joining device 610 may be added as shown in FIG.
  • the joining devices 40, 41, and 610 are arranged side by side in the X direction.
  • the second wafer transfer region 67 is provided extending in the X direction between the transition devices 50 and 51 and the position adjusting device 52 and the bonding devices 40, 41 and 610 (Y direction).
  • any of the joining systems 1 shown in FIGS. 24 to 26 can enjoy the effects of the above embodiment. That is, since one position adjusting device 52 is provided in common for the plurality of joining devices 40, 41 (, 610), the occupation area of the joining system 1 can be reduced. Accordingly, the manufacturing cost of the joining system 1 can be reduced. Further, the steps A1 to A11 are performed in one bonding system 1, and a series of bonding processing of the processing target wafer W and the supporting wafer S can be appropriately performed.
  • the wafer to be processed W and the support wafer S are bonded in a state where the wafer to be processed W is disposed on the lower side and the support wafer S is disposed on the upper side.
  • the support wafer S may be disposed upside down.
  • a step A1 ⁇ A4 described above with respect to the support wafer S applying an adhesive agent G on the bonding surface S J of the support wafer S.
  • the above-described steps A5 to A7 are performed on the wafer W to be processed, and the front and back surfaces of the wafer W to be processed are reversed.
  • the above-described steps A8 to A11 are performed, and the support wafer S and the wafer W to be processed are bonded.
  • the adhesive G is applied to either the processing target wafer W or the support wafer S in the coating apparatus 60.
  • the adhesive G is applied to both the processing target wafer W and the support wafer S. May be applied.
  • the wafer W to be processed is heated to a predetermined temperature of 100 ° C. to 300 ° C. in the step A2, but the heat treatment of the wafer W to be processed may be performed in two stages.
  • the heat treatment apparatus 64 after heating to a first heat treatment temperature, for example, 100 ° C. to 150 ° C., the heat treatment apparatus 64 is heated to a second heat treatment temperature, for example, 150 ° C. to 300 ° C.
  • the temperature of the heating mechanism itself in the heat treatment apparatus 61 and the heat treatment apparatus 64 can be made constant. Therefore, it is not necessary to adjust the temperature of the heating mechanism, and the throughput of the bonding process between the processing target wafer W and the supporting wafer S can be further improved.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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EP3637456A3 (en) * 2018-10-11 2020-12-16 Canon Kabushiki Kaisha Film forming apparatus, film forming method, and method of manufacturing article
CN114175224A (zh) * 2019-06-25 2022-03-11 米尔鲍尔有限两合公司 具有调节单元的部件输送装置和用于调节部件输送装置的方法

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KR102610837B1 (ko) 2020-12-29 2023-12-06 세메스 주식회사 기판과 기판을 접합하기 위한 기판 접합 설비에서의 기판 보관 및 정렬 장치

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EP3637456A3 (en) * 2018-10-11 2020-12-16 Canon Kabushiki Kaisha Film forming apparatus, film forming method, and method of manufacturing article
US11275309B2 (en) 2018-10-11 2022-03-15 Canon Kabushiki Kaisha Film forming apparatus, film forming method, and method of manufacturing article
CN114175224A (zh) * 2019-06-25 2022-03-11 米尔鲍尔有限两合公司 具有调节单元的部件输送装置和用于调节部件输送装置的方法

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