WO2014007263A1 - Liquide de revêtement pour diffusion de dopant, procédé pour appliquer ledit liquide de revêtement, procédé pour produire un semi-conducteur associé, et semi-conducteur - Google Patents

Liquide de revêtement pour diffusion de dopant, procédé pour appliquer ledit liquide de revêtement, procédé pour produire un semi-conducteur associé, et semi-conducteur Download PDF

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Publication number
WO2014007263A1
WO2014007263A1 PCT/JP2013/068178 JP2013068178W WO2014007263A1 WO 2014007263 A1 WO2014007263 A1 WO 2014007263A1 JP 2013068178 W JP2013068178 W JP 2013068178W WO 2014007263 A1 WO2014007263 A1 WO 2014007263A1
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WO
WIPO (PCT)
Prior art keywords
coating solution
dopant diffusion
dopant
semiconductor
diffusion
Prior art date
Application number
PCT/JP2013/068178
Other languages
English (en)
Japanese (ja)
Inventor
勝間　勝彦
康浩 青木
Original Assignee
日本合成化学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本合成化学工業株式会社 filed Critical 日本合成化学工業株式会社
Publication of WO2014007263A1 publication Critical patent/WO2014007263A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un liquide de revêtement pour diffusion de dopant qui contient, en tant que source de dopant, un acide qui est sélectionné parmi des acides phosphoriques et des acides boriques et un sel d'amine organique d'un composé amine organique (α) qui possède 1 à 4 atomes d'azote. Par conséquent, il est possible de proposer : un liquide de revêtement pour diffusion de dopant, qui est capable de fournir un semi-conducteur qui possède une résistivité superficielle élevée ; un procédé pour appliquer le liquide de revêtement pour diffusion de dopant ; un procédé pour produire un semi-conducteur en utilisant le liquide de revêtement pour diffusion de dopant ; et un semi-conducteur.
PCT/JP2013/068178 2012-07-04 2013-07-02 Liquide de revêtement pour diffusion de dopant, procédé pour appliquer ledit liquide de revêtement, procédé pour produire un semi-conducteur associé, et semi-conducteur WO2014007263A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-150208 2012-07-04
JP2012150208 2012-07-04

Publications (1)

Publication Number Publication Date
WO2014007263A1 true WO2014007263A1 (fr) 2014-01-09

Family

ID=49882017

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/068178 WO2014007263A1 (fr) 2012-07-04 2013-07-02 Liquide de revêtement pour diffusion de dopant, procédé pour appliquer ledit liquide de revêtement, procédé pour produire un semi-conducteur associé, et semi-conducteur

Country Status (2)

Country Link
JP (1) JP2014030011A (fr)
WO (1) WO2014007263A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3147997A1 (fr) 2015-09-25 2017-03-29 Taoglas Group Holdings Ensembles d'antenne de type à ailettes
CN109390223A (zh) * 2017-08-07 2019-02-26 东京应化工业株式会社 杂质扩散剂组合物及杂质扩散层的形成方法
WO2020158317A1 (fr) * 2019-01-29 2020-08-06 東レ株式会社 Composition pour prémouillage et procédé de production de cellule solaire l'utilisant
CN113169247A (zh) * 2018-12-07 2021-07-23 东丽株式会社 p型杂质扩散组合物及其制造方法、使用其的半导体元件的制造方法和太阳能电池

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5830143B1 (ja) * 2014-08-25 2015-12-09 信越化学工業株式会社 太陽電池セルの製造方法
JP7428478B2 (ja) 2019-05-24 2024-02-06 東京応化工業株式会社 拡散剤組成物、及び半導体基板の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007035719A (ja) * 2005-07-22 2007-02-08 Nippon Synthetic Chem Ind Co Ltd:The ホウ素拡散用塗布液
JP2007053353A (ja) * 2005-07-22 2007-03-01 Nippon Synthetic Chem Ind Co Ltd:The リン拡散用塗布液
JP2010062334A (ja) * 2008-09-03 2010-03-18 Japan Vam & Poval Co Ltd リン拡散用塗布液
JP2011187894A (ja) * 2010-03-11 2011-09-22 Sharp Corp リンドーパント拡散用塗布液、それにより形成された塗布膜および太陽電池の製造方法
JP2012514331A (ja) * 2008-12-29 2012-06-21 ハネウェル・インターナショナル・インコーポレーテッド 異なる伝導率決定タイプ元素プロファイルを有するドーピング領域を同時に形成する方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007035719A (ja) * 2005-07-22 2007-02-08 Nippon Synthetic Chem Ind Co Ltd:The ホウ素拡散用塗布液
JP2007053353A (ja) * 2005-07-22 2007-03-01 Nippon Synthetic Chem Ind Co Ltd:The リン拡散用塗布液
JP2010062334A (ja) * 2008-09-03 2010-03-18 Japan Vam & Poval Co Ltd リン拡散用塗布液
JP2012514331A (ja) * 2008-12-29 2012-06-21 ハネウェル・インターナショナル・インコーポレーテッド 異なる伝導率決定タイプ元素プロファイルを有するドーピング領域を同時に形成する方法
JP2011187894A (ja) * 2010-03-11 2011-09-22 Sharp Corp リンドーパント拡散用塗布液、それにより形成された塗布膜および太陽電池の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3147997A1 (fr) 2015-09-25 2017-03-29 Taoglas Group Holdings Ensembles d'antenne de type à ailettes
CN109390223A (zh) * 2017-08-07 2019-02-26 东京应化工业株式会社 杂质扩散剂组合物及杂质扩散层的形成方法
CN113169247A (zh) * 2018-12-07 2021-07-23 东丽株式会社 p型杂质扩散组合物及其制造方法、使用其的半导体元件的制造方法和太阳能电池
WO2020158317A1 (fr) * 2019-01-29 2020-08-06 東レ株式会社 Composition pour prémouillage et procédé de production de cellule solaire l'utilisant

Also Published As

Publication number Publication date
JP2014030011A (ja) 2014-02-13

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