WO2013177943A1 - Suspension de planarisation mécano-chimique et son application - Google Patents

Suspension de planarisation mécano-chimique et son application Download PDF

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Publication number
WO2013177943A1
WO2013177943A1 PCT/CN2013/000570 CN2013000570W WO2013177943A1 WO 2013177943 A1 WO2013177943 A1 WO 2013177943A1 CN 2013000570 W CN2013000570 W CN 2013000570W WO 2013177943 A1 WO2013177943 A1 WO 2013177943A1
Authority
WO
WIPO (PCT)
Prior art keywords
planarizing
acid
slurry
polishing
flattening
Prior art date
Application number
PCT/CN2013/000570
Other languages
English (en)
Chinese (zh)
Inventor
徐春
Original Assignee
安集微电子（上海）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子（上海）有限公司 filed Critical 安集微电子（上海）有限公司
Publication of WO2013177943A1 publication Critical patent/WO2013177943A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Definitions

  • the present invention relates to a chemical mechanical planarization paste, and more particularly to a chemical mechanical planarization slurry for polishing silicon and copper.
  • CMP chemical mechanical polishing
  • the chemical mechanical polishing system is a chemical mechanical planarization technology that integrates cleaning, drying, on-line detection, and end point detection. It is a product of the development of integrated circuits (ICs) toward miniaturization, multi-layering, flattening, and thinning. Integrated circuits to increase production efficiency, reduce costs, and wafer planarization.
  • CMP is used in a wide range of IC manufacturing applications, including substrates, dielectrics, and interconnect materials.
  • Metal CMP is one of the key processes for device and interconnect fabrication in chip manufacturing below 90 nm, and is a research hotspot in the sub-90 nm era.
  • Metallic copper, aluminum, and tungsten are increasingly being used for interconnections on integrated circuit devices, and multilayer interconnections must be achieved by chemical mechanical polishing. Therefore, the development of a new generation of metal chemical mechanical polishing liquids has been attracting attention in the industry.
  • Patent CN 02114147.9 discloses A copper chemical-polishing process polishing liquid, the patent has a problem that the polishing rate of silicon is insufficient;
  • Patent CN 01818940.7 discloses a slurry for chemical mechanical polishing of copper;
  • patent CN 98120987.4 discloses a copper for use.
  • CMP slurry manufacturing and manufacturing methods for integrated circuits However, as the 3D packaging technology continues to mature, the through-silicon via technology continues to get more applications, and the application of polishing silicon and copper has attracted more and more attention.
  • Traditional copper The polishing solution uses hydrogen peroxide as the oxidant, but this oxidant inhibits the polishing of the silicon.
  • the above-mentioned polishing liquid for copper polishing also has a case where the removal rate is not grouped, or there are defects, scratches, stains, and/or other residues on the surface of the substrate, or the polishing selectivity to copper is insufficient, or the polishing process is performed. There are problems such as local or overall corrosion. Therefore, it is necessary to develop a new chemical mechanical polishing slurry suitable for the process.
  • the present invention discloses a simultaneous polishing of silicon and copper by a new polishing system, and controls local and overall corrosion of the metal material to reduce surface contamination of the substrate, which is substantially different from the above patents. Summary of invention
  • the chemical mechanical planarizing paste of the present invention can simultaneously control the polishing rate of silicon and copper metal by the action of the polishing system, while controlling local and overall defects of silicon and metal materials, reducing surface contamination of the substrate, and improving product yield.
  • the chemical mechanical planarizing paste of the present invention comprises abrasive particles, an oxidizing agent, a polishing rate enhancer, a corrosion inhibitor, a polishing surface improving agent, and a carrier.
  • the concentration of the abrasive particles is 2 to 50%
  • the concentration of the oxidizing agent is 0.1 to 10%
  • the concentration of the polishing rate increasing agent is 0.1 to 10%
  • the concentration of the corrosion inhibitor is 0.01 to 2%
  • polishing is performed.
  • the concentration of the surface improving agent is 0.01 to 2%
  • the carrier is the balance. The above percentages refer to the total weight percentage of the entire chemical mechanical polishing slurry.
  • the abrasive particles of the present invention may be referred to the prior art, preferably silica, alumina, cerium oxide and/or polymer particles such as polyethylene or polytetrafluoroethylene, more preferably silica.
  • the size of the abrasive particles is preferably from 20 to 200 nm, more preferably from 30 to 100 legs.
  • the oxidizing agent comprises a strong oxidizing agent, preferably an inorganic peroxide, a persulfide and a monopersulfide, an organic peroxide, or an acid or a salt formed from a normal-valent halogen oxide other than fluorine.
  • a strong oxidizing agent preferably an inorganic peroxide, a persulfide and a monopersulfide, an organic peroxide, or an acid or a salt formed from a normal-valent halogen oxide other than fluorine.
  • the soluble salts of the acid Preferably, one or more of an acid or a soluble salt formed by a halogen high-valent oxide (removing fluorine); including periodic acid, high bromic acid, perchloric acid, potassium iodate, potassium bromate, potassium chlorate, hypoiodous acid Potassium, potassium hypobromite, potassium hypochlorite, etc., and ammonium salts of the above acids One or several of them.
  • the polishing rate increasing agent may be one of an organic acid, an organic base, an amino acid, an ammonia compound, an organic citric acid or an organic sulfonic acid capable of reacting with silicon and a copper surface to form a soluble compound.
  • organic acid an organic base
  • amino acid an ammonia compound
  • organic citric acid an organic sulfonic acid capable of reacting with silicon and a copper surface to form a soluble compound.
  • the polishing rate enhancer may further comprise an ammonia compound having a -NH structure, such as an azole, an anthracene or the like.
  • the corrosion inhibitor includes a azole, an imidazole, a thiazole, a pyridine or a pyrimidine compound.
  • the azole compound is selected from the group consisting of benzotriazole, 5-methyl-1,2,3-benzotriazine, 5-carboxybenzotriazole, 1-hydroxy-benzotriazole, 1, 2,4-triazole, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, 3,5-diamino-1,2,4-tri Azole, 5-carboxy-3-amino-1,2,4-triazide, 3-amino-5-mercapto-1,2,4-triazole, 5-acetic acid-1H-tetrazole, 5 One or more of methyltetrazolium, 5-amino-1H-tetrazole and 1-phenyl-5-mercapto-tetrazole; the imidazole compound is benzimidazole and/or 2-mer
  • the surface improving agent comprises various anionic, nonionic surfactants, preferably polyvinylpyrrolidone, polyethylene glycol and/or fatty alcohol polyoxyethylene ether.
  • the chemical mechanical planarizing slurry of the present invention has a pH of 8.0 to 12.0, preferably 9.0-11.0.
  • the pH adjusting agent may be various bases to adjust the pH to a desired value, preferably potassium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, ammonia water, Ethanolamine and/or triethanolamine and the like.
  • the chemical mechanical planarization paste of the present invention can be used for the polishing of silicon and copper.
  • Figure 1a and Figure 1b are SEM images after polishing of the comparative example
  • Example 2 is an SEM image after polishing in Example 1;
  • Figure 3 is an SEM image after polishing of Example 2.
  • Figure 4 is a SEM image after polishing of Example 3.
  • Figure 5 is a SEM image after polishing of Example 4.
  • Table 1 shows the flattening paddles 1 to 16 of the present invention.
  • the formulations in the table are used to uniformly mix the components, and the deionized water is used to make up 100% by weight of the flattened paddle.
  • adjust the pH to the desired pH with a pH adjuster (20% KOH or dilute HN03, depending on the pH) continue stirring to a uniform flow, and let stand for 30 minutes to obtain each chemical mechanical planarization slurry.
  • the flattening slurry 1 ⁇ 6 of the present invention and the comparative flattening slurry, the formulation in the table, the components are uniformly mixed, the deionized water is made up to 100% by mass, and finally the pH adjusting agent (20% KOH or diluted HN0 3) According to the need of pH value, adjust to the desired pH value, continue to stir until the hooking fluid, and let stand for 30 minutes to obtain each chemical mechanical flattening slurry.
  • the planarizing pastes 1 to 6 and the comparative planarizing paste of the present invention in Table 2 were respectively polished for different materials (including a silicon substrate and a Cu substrate). The polishing conditions were the same, and the polishing parameters were as follows: Logitech.
  • Table 2 The flattening slurry effect of the present invention Example 1 And contrasting the smoothing effect of the flattening paste
  • wt% of the present invention refers to the mass percentage.
  • the specific embodiments of the present invention have been described in detail above, but are merely exemplary, and the invention is not limited to the specific embodiments described above. Any equivalent modifications and substitutions to the invention are also within the scope of the invention. Accordingly, equivalent changes and modifications may be made without departing from the spirit and scope of the invention.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Cette invention concerne une suspension de planarisation mécano-chimique et son application. La suspension est constituée de particules broyées, d'un oxydant, d'un accélérateur de polissage, d'un inhibiteur de corrosion, d'un agent améliorant la surface de polissage et d'un support. La suspension de planarisation mécano-chimique peut, au moyen d'un système de polissage, contrôler simultanément les vitesses de polissage du silicium et du cuivre, et contrôler simultanément les défauts partiels et généraux du silicium et d'un métal, ce qui permet de réduire les polluants à la surface du substrat et d'augmenter le rendement du produit.
PCT/CN2013/000570 2012-05-30 2013-05-14 Suspension de planarisation mécano-chimique et son application WO2013177943A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201210172583.7 2012-05-30
CN201210172583.7A CN103450810B (zh) 2012-05-30 2012-05-30 一种化学机械平坦化浆料及其应用

Publications (1)

Publication Number Publication Date
WO2013177943A1 true WO2013177943A1 (fr) 2013-12-05

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CN (1) CN103450810B (fr)
TW (1) TW201348361A (fr)
WO (1) WO2013177943A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2892967A4 (fr) * 2012-09-07 2016-02-24 Cabot Microelectronics Corp Composition et procédé de polissage employant une polypyrrolidone

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103865402A (zh) * 2012-12-17 2014-06-18 安集微电子（上海）有限公司 一种化学机械抛光液
CN103725256A (zh) * 2013-12-31 2014-04-16 上海集成电路研发中心有限公司 用于cmp的研磨颗粒体系及抛光液
CN105729252A (zh) * 2016-04-29 2016-07-06 成都贝施美生物科技有限公司 一种义齿的抛光方法
CN109971356A (zh) * 2017-12-27 2019-07-05 安集微电子（上海）有限公司 一种化学机械抛光液
CN116855176B (zh) * 2023-06-26 2024-03-12 东莞市海发科技发展有限公司 一种金属表面处理抛光液及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
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US20080276543A1 (en) * 2007-05-08 2008-11-13 Thomas Terence M Alkaline barrier polishing slurry
CN101457122A (zh) * 2007-12-14 2009-06-17 安集微电子（上海）有限公司 一种用于铜制程的化学机械抛光液
CN101760137A (zh) * 2008-12-22 2010-06-30 罗门哈斯电子材料Cmp控股股份有限公司 去除聚合物阻挡层的抛光浆液
CN102373014A (zh) * 2010-08-24 2012-03-14 安集微电子（上海）有限公司 一种化学机械抛光液

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CN101333419B (zh) * 2008-08-05 2011-06-29 清华大学 一种集成电路铜布线的无磨粒化学机械抛光液
CN102093817A (zh) * 2009-12-11 2011-06-15 安集微电子（上海）有限公司 一种用于钽阻挡抛光的化学机械抛光液
CN102443351B (zh) * 2010-10-14 2015-07-29 安集微电子（上海）有限公司 一种化学机械平坦化浆料

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080276543A1 (en) * 2007-05-08 2008-11-13 Thomas Terence M Alkaline barrier polishing slurry
CN101457122A (zh) * 2007-12-14 2009-06-17 安集微电子（上海）有限公司 一种用于铜制程的化学机械抛光液
CN101760137A (zh) * 2008-12-22 2010-06-30 罗门哈斯电子材料Cmp控股股份有限公司 去除聚合物阻挡层的抛光浆液
CN102373014A (zh) * 2010-08-24 2012-03-14 安集微电子（上海）有限公司 一种化学机械抛光液

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2892967A4 (fr) * 2012-09-07 2016-02-24 Cabot Microelectronics Corp Composition et procédé de polissage employant une polypyrrolidone

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CN103450810B (zh) 2018-03-13
TW201348361A (zh) 2013-12-01
CN103450810A (zh) 2013-12-18

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