WO2013161473A1 - 走査電子顕微鏡 - Google Patents
走査電子顕微鏡 Download PDFInfo
- Publication number
- WO2013161473A1 WO2013161473A1 PCT/JP2013/058482 JP2013058482W WO2013161473A1 WO 2013161473 A1 WO2013161473 A1 WO 2013161473A1 JP 2013058482 W JP2013058482 W JP 2013058482W WO 2013161473 A1 WO2013161473 A1 WO 2013161473A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sample
- scanning transmission
- electron microscope
- opening angle
- image
- Prior art date
Links
- 238000010894 electron beam technology Methods 0.000 claims abstract description 41
- 238000001514 detection method Methods 0.000 claims abstract description 32
- 230000005540 biological transmission Effects 0.000 claims description 54
- 239000013078 crystal Substances 0.000 claims description 30
- 230000001133 acceleration Effects 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 15
- 239000010409 thin film Substances 0.000 abstract description 19
- 238000000034 method Methods 0.000 description 8
- 239000011295 pitch Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 2
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/222—Image processing arrangements associated with the tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/263—Contrast, resolution or power of penetration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24455—Transmitted particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
- H01J2237/24465—Sectored detectors, e.g. quadrants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24475—Scattered electron detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2802—Transmission microscopes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2803—Scanning microscopes characterised by the imaging method
- H01J2237/2804—Scattered primary beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2803—Scanning microscopes characterised by the imaging method
- H01J2237/2804—Scattered primary beam
- H01J2237/2805—Elastic scattering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/282—Determination of microscope properties
- H01J2237/2826—Calibration
Definitions
- the present invention relates to a scanning electron microscope.
- the present invention relates to a scanning electron microscope having means for detecting scanning transmission electrons, and a scanning transmission electron microscope.
- a scanning electron microscope focuses a primary electron beam emitted from an electron gun on a sample by a magnetic lens, and further scans the primary electron beam on the sample by a magnetic field type or electric field type deflector, thereby secondary charging from the sample.
- This is an apparatus for obtaining an enlarged image of a sample by detecting particles (for example, secondary electrons or scanning transmission electrons).
- the observation magnification of the magnified image of the sample is defined by the ratio between the scanning width of the primary electron beam on the sample surface and the display width of the magnified image formed by the secondary charged particles obtained from the scanned area.
- the scanning width of the sample of the primary electron beam can be arbitrarily changed by the deflector.
- the magnification value represented in this specification will be described as being defined as 100 mm, in which the display width of the magnified image is close to the value that is commonly used in the world.
- the magnification of 10,000 times refers to a state in which a sample image of a 10 ⁇ m region is displayed on a 100 mm wide enlarged image.
- magnification calibration requires highly accurate dimension measurement at a magnification higher than that at the time of observation.
- the microscale When calibrating the dimensions of a scanning electron microscope using a microscale whose dimensions are already known, the microscale has a minimum value of about 100 nm per pitch, and furthermore, measurement accuracy cannot be achieved unless multiple dimensions are measured multiple times.
- a sample image having a magnification of 1,000,000 times or more does not have a sufficient dimensional pitch and cannot be applied to dimensional calibration.
- a transmission electron microscope or a scanning transmission electron microscope with an acceleration voltage of 100 kV or higher has a high resolution under normal high resolution observation conditions. Since a scanning transmission image and a crystal lattice image (hereinafter referred to as a lattice image) can be obtained, the crystal structure can be observed if normal high-resolution observation conditions are set.
- the maximum acceleration voltage that can be set is low, such as a maximum acceleration voltage that can be set is 30 kV, and the transmission electron microscope has an acceleration voltage of 100 kV or more. The resolution is low.
- the present invention provides a scanning electron microscope capable of acquiring a lattice image with a known crystal structure as a scanning transmission image even in a general-purpose scanning electron microscope, and performing high-accuracy dimensional calibration (magnification calibration) using the image. For the purpose.
- an electron source that generates an electron beam
- a deflector that deflects the electron beam to scan the sample
- the electron beam is focused on the sample.
- An objective lens a detector that detects scanning transmission electrons that have passed through the sample
- a diaphragm that is disposed between the sample and the detector and controls a detection angle of the scanning transmission electrons
- a grating image is acquired at a second opening angle that is larger than the first opening angle so as to be incident on the sample at a predetermined opening angle and the beam diameter is minimized on the sample.
- a scanning electron microscope capable of acquiring a lattice image with a known crystal structure as a scanning transmission image and using that to perform high-precision dimensional calibration (magnification calibration). Can be provided.
- beam opening angle (alpha) i exists in the range of 2 (theta) B ⁇ (alpha) i . It is the figure which showed the process in which a lattice image is obtained. It is the figure which showed the change of the lattice image signal with respect to an electron beam scanning position. It is the figure which showed the change of the image contrast with respect to a primary electron beam opening angle.
- FIG. 1 is a scanning electron microscope which is a schematic diagram of one embodiment of the present invention.
- the scanning and electron microscope are scanning electron microscopes having means for detecting scanning transmission electrons, and are sometimes called scanning transmission electron microscopes.
- the primary electron beam 3 emitted from the cathode 1 by the voltage V1 applied to the cathode 1 and the first anode 2 is accelerated to the voltage Vacc applied to the second anode 4 and proceeds to the subsequent electromagnetic lens system.
- the acceleration voltages V acc and V 1 are controlled by the high voltage control circuit 22.
- the primary electron beam 3 is converged by the first converging lens 5 controlled by the first converging lens control circuit 23. Further, after the unnecessary region is removed by the objective aperture 6, the primary electron beam 3 is converged again by the second convergent lens 7 controlled by the second convergent lens control circuit 24 and controlled by the objective lens control circuit 26.
- the sample 13 is two-dimensionally scanned by the upper deflection coil 8 and the lower deflection coil 10 which are narrowed down to the sample 13 by the objective lens 12 and further connected to the deflection control circuit 25.
- the sample 13 needs to be a thin film in order to acquire scanning transmission electrons.
- the crystal lattice spacing needs to be known for use in dimensional calibration.
- the sample 13 is on the sample fine movement device 14 controlled by the sample fine movement control circuit 27.
- the secondary electrons 16 having information on the sample surface are wound up by the magnetic field of the objective lens 12, and an orthogonal electromagnetic field (EXB) disposed above the objective lens.
- EXB orthogonal electromagnetic field
- the scanning transmission electron 41 obtained by the transmission of the primary electron beam 3 through the sample 13 is detected by the detector 42 installed below the sample 13 and amplified by the amplifier 43.
- the scanning transmission electrons 41 include scattered electrons and non-scattered electrons, which will be described later.
- the detection angle of the scanning transmission electron 41 is limited by the diaphragm 44 installed between the objective lens 12 and the detector 42.
- the amplifier 21 and the amplifier 43 are controlled by the signal control circuit 28.
- the various control circuits 22 to 28 are controlled by a computer 30 that controls the entire apparatus.
- the amplified secondary electron and transmission electron signals are displayed on the screen of the display device 31 as an enlarged image of the sample.
- the computer 30 also includes an image acquisition unit 32 for acquiring observation images displayed on the display device 31 as image information, an image processing unit 33 for performing various image processing on the observation images, and A calculation unit 34 for calculating parameters from the results of the image processing and other various calculations, a storage unit 35 such as an internal memory for storing observation images and calculation results, observation conditions, and the like.
- An input unit 36 for inputting is connected.
- the image acquisition unit 32 can also directly acquire a captured image without going through the display device 31.
- the image acquisition unit 32, the image processing unit 33, the calculation unit 34, and the storage unit 35 may be implemented as functions of the computer 30 or may be realized by a program executed on the computer 30.
- the image processing unit 33 may also function as the calculation unit 34, or vice versa.
- the input unit 36 may also be used as a screen displayed on the display device 31 when the display device 31 is a touch panel.
- FIG. 2 is an explanatory diagram of the beam opening angle ⁇ i for the primary electron beam 3 and the detection angle ⁇ i for the scanning transmission electron 41.
- the beam opening angle ⁇ i is a half angle representing the spread when the primary electron beam 3 is incident on the sample 13.
- the beam opening angle ⁇ i is set by a change in the hole diameter of the objective aperture 6 and the crossover position 45 of the primary electron beam by the second converging lens 7.
- the detection angle ⁇ i is an angle when the detection surface of the detector 42 is viewed from the irradiation point of the primary electron beam of the sample 13.
- the detection angle ⁇ i is set by changing the hole diameter of the diaphragm 44.
- the beam irradiation opening half angle (hereinafter referred to as beam opening angle) ⁇ i to the sample is usually adjusted so as to minimize the primary electron beam diameter. This is because the contrast of the image obtained in this case is the best. This is called normal high-resolution observation conditions.
- the opening angle ⁇ i of the primary electron beam 3 and the focus F are set so that the scanning electron microscope is in a normal high-resolution observation condition.
- the condition setting in this step may be performed according to an instruction from the input unit 36, or may be automatically set by a GUI as shown in FIG. As a result, the user can observe a high-resolution secondary electron image or scanning transmission electron image on the display device 31.
- the beam opening angle ⁇ i is given as a value when the diffraction phenomenon determined by the spherical aberration and chromatic aberration of the objective lens 12 determined by the focus position of the primary electron beam 3 and the acceleration voltage V acc is minimized, and the focus F Is set by the relationship between the distance between the objective lens 12 and the sample (working distance: WD) and the excitation of the objective lens 12.
- STEP 1 may be performed by changing the order of any of the steps in the present embodiment, and may not necessarily be executed.
- the lattice spacing d of the thin film crystal sample to be observed is set.
- the value of d is a known value for each crystal sample.
- the (111) crystal plane spacing of silicon (silicon) is 0.314 nm.
- An example of a method for setting the lattice spacing d is shown in FIG.
- a GUI 51 that can select the type of the scanned transmission image is displayed on the display device 31.
- the user can select high-resolution scanning transmission electron image observation “UHR STEM” and lattice image observation “Lattice Image” using the input unit 36 in the observation method selection portion 52.
- “UHR STEM” is selected, the display shown in FIG. 4A is displayed, and the conditions shown in STEP 1 are set.
- the display shown in FIG. 4B is displayed, and in addition, a thin film crystal sample list 53 to be observed in the scanning transmission image is displayed.
- the user selects the currently observed thin film crystal sample from the thin film crystal sample list 53.
- the corresponding conditions are set after STEP3.
- ⁇ STEP3> In this process, in order to obtain a lattice image having the lattice plane distance d of the sample determined in STEP 2, an optimum electron beam opening angle ⁇ i , transmission electron detection angle ⁇ i , and STEP 1 sample observation are set.
- the focus change amount ⁇ F from the focused focus F is set.
- the lattice image is an image obtained by contrast (phase contrast) obtained by interference of electrons transmitted through the thin film sample.
- 6 to 8 are diagrams for explaining the interference state of the electron wave according to the relationship between the Bragg angle ⁇ B and the beam opening angle ⁇ i . 6 to 8 show views in a vertical section of the sample including the optical axis for the sake of simplicity. Therefore, the electron wave of scattered electrons described below is actually scattered in a donut shape with a certain scattering angle.
- the state is as shown in FIG. 6A, and the beam opening angle ⁇ i is smaller than the Bragg angle ⁇ B ( ⁇ i ⁇ B ).
- the signal detection surface 64 has a signal form as shown in FIG.
- the signal detection surface 64 is a detection surface of the detector 42.
- FIG. 8A the case where ⁇ i is further expanded from the state of FIG. 7A and is in the range of ⁇ i > 2 ⁇ B will be described.
- the three electron waves of both scattered electrons and non-scattered electrons overlap, and an interference fringe 66 appears at the center of the non-scattered electrons on the signal detection surface 64 as shown in FIG.
- the interference fringes formed at the center are detected as scanning transmission electron signals in the detection range 67 of the detection angle ⁇ i formed by the stop 44 as shown in FIG. 9A.
- the interference fringes 65 and 66 are shifted as shown in FIG. 9B.
- FIG. 10 is a graph in which the horizontal axis represents the scanning position of the sample 13 and the vertical axis represents the total amount of scanning transmission electrons detected in the range of the detection angle ⁇ i .
- the interference fringes 65 and 66 are shifted, and as shown in FIG. 10, a lattice image signal 68 having strength and weakness appears in the scanning transmission electron image.
- the intensity change of the lattice image signal 68 is detected by the detector 42, amplified by the amplifier 43, and output as a lattice image to the display device 31 via the signal control circuit 28 and the computer 30.
- ⁇ i needs to be set to an angle larger than 2 ⁇ B , but in order to observe a lattice image at an acceleration voltage of 30 kV or less, a more appropriate beam opening angle (referred to as ⁇ i1 ) is set. There is a need. This will be described with reference to FIG. FIG. 11 shows the relationship between the beam opening angle and the image contrast at a predetermined lattice plane distance d and a predetermined acceleration voltage Vacc .
- a normal secondary electron image or scanning transmission image has a beam diameter that is minimized at the beam opening angle (referred to as ⁇ i0 ) in STEP 1 like the secondary electron / scanning transmission image contrast 70, and the image contrast is also maximum. It becomes.
- ⁇ i0 the beam opening angle
- 2 ⁇ B is smaller than the beam opening angle ⁇ i0 at the minimum beam diameter, so that the condition of the contrast of the scanning transmission image is the maximum (the beam opening angle ⁇ at the minimum beam diameter).
- i0 makes the lattice image visible. Therefore, it is not necessary to strictly adjust the beam opening angle ⁇ i in accordance with the lattice spacing.
- the beam opening angle ⁇ i0 which is a condition that minimizes the beam diameter, is smaller than 2 ⁇ B , so that a lattice image is obtained under the condition of the beam opening angle ⁇ i0. I can't.
- the beam opening angle ⁇ i is further increased from ⁇ i0 for the observation of the lattice image, the image contrast is lowered as the primary electron beam diameter is increased due to the aberration of the objective lens 12. Further, as described above, the lattice image does not appear unless the beam opening angle ⁇ i is larger than 2 ⁇ B.
- the contrast of the lattice image is maximized at the beam opening angle ⁇ i1 as the lattice image contrast 71 in FIG. 11 with respect to the beam opening angle ( ⁇ i > 2 ⁇ B ) at which the lattice image can be observed. Therefore, the beam opening angle is set to ⁇ i1 for lattice image observation.
- ⁇ i is an amount that depends on the lattice plane distance d, the acceleration voltage V acc , the detection angle ⁇ i , and the working distance (WD) of the objective lens.
- the lattice plane distance d and the acceleration voltage V acc are determined from the user input in FIG. 4, and the detection angle ⁇ i and the working distance (WD) are determined from the state of the apparatus when acquiring the lattice image. Therefore, if the optimal ⁇ i is obtained and stored in the storage unit 35 in advance for the lattice plane distance d, the acceleration voltage V acc , the detection angle ⁇ i , and the working distance (WD) of the objective lens, the lattice image can be obtained.
- the optimum ⁇ i can be read and set.
- the beam opening angle ⁇ i ′ at the time of observing the lattice image is not large, the shift of the focus change ⁇ F does not become a large image change. Therefore, the lattice image is usually observed without giving the focus change ⁇ F.
- the focus condition F ′ (or focus) for observing the lattice image according to the lattice interval d of the sample is required. It is necessary to set the change ⁇ F) from the condition F on the apparatus side. Since the focus condition F ′ is given as a function of the Bragg angle ⁇ B , it is determined using the acceleration voltage and the lattice spacing d as in the above formula.
- the detection angle ⁇ is determined by the hole diameter of the diaphragm 44, an optimum value of ⁇ can be selected by adjusting this.
- the hole diameter of the diaphragm 44 may be variable so that the hole diameter can be switched in multiple steps or continuously.
- the diaphragm 44 itself may be replaced with a diaphragm having a different hole diameter.
- the optimum range is very limited similarly to the relationship of the contrast with the opening angle ⁇ i shown in FIG.
- the optimum opening angle ⁇ i1 (or optimum ⁇ i ), optimum detection angle ⁇ i , and optimum focus condition F ′ (or optimum ⁇ F) may be stored as a set.
- Information regarding the beam opening angle ⁇ i , the detection angle ⁇ i , and the focus change amount ⁇ F from the focus F determined for the lattice image observation is stored in advance in the storage unit 35 for each thin film crystal sample.
- the set thin film crystal sample or lattice plane spacing d
- it is called from the storage unit 35 and set via the calculation unit 34 and the computer 30.
- a lattice image obtained under the conditions set in STEP 3 is acquired by the image acquisition unit 32.
- This lattice image may be displayed on the display device 31.
- the image processing unit 33 performs Fourier transform (FT) on the acquired lattice image to acquire a Fourier transform pattern (FT information).
- FT Fourier transform
- FT information Fourier transform pattern
- ⁇ STEP5> The size corresponding to one pixel of the image is calculated by the calculation unit 34 from the FT information of the lattice image obtained in STEP 4, and the actual magnification value M ′ of the lattice image obtained in STEP 4 is calculated based on the result. To do.
- this invention is not limited to the above-mentioned Example, Various modifications are included.
- the above-described embodiments have been described in detail for easy understanding of the present invention, and are not necessarily limited to those having all the configurations described.
- a part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment.
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Abstract
Description
この処理では、走査電子顕微鏡が通常の高分解能観察条件になるように、一次電子ビーム3の開き角αiやフォーカスFを設定する。本ステップでの条件設定は入力部36からの指示に従って行われてもよいし、後述する図4のようなGUIによって自動的に設定されても良い。これにより、ユーザは高分解能の二次電子像や走査透過電子像を表示装置31上にて観察することができる。ここでビーム開き角αiは、一次電子ビーム3のフォーカス位置で決まる対物レンズ12の球面収差と色収差、および加速電圧Vaccで決まる回折現象が最小になるときの値で与えられ、またフォーカスFは、対物レンズ12と試料との距離(ワーキングディスタンス:WD)と対物レンズ12の励磁との関係によって設定される。
この処理では、観察したい薄膜結晶試料の格子面間隔dを設定する。dの値は、それぞれの結晶試料によって既知の値であり、例えば珪素(シリコン;Si)の(111)結晶面間隔は0.314nmである。格子面間隔dの設定の方法の例を図4に示す。ここでは、走査透過像の種類を選択できるGUI51を、表示装置31に表示する。ユーザは観察方法選択部分52において、高分解能走査透過電子像観察「UHR STEM」および格子像観察「Lattice Image」を、入力部36を用いて選択できる。「UHR STEM」が選択されているときは、図4(a)に示した表示となり、前記STEP1で示した条件が設定される。一方、「Lattice Image」が選択されたときは、図4(b)に示した表示となり、加えて走査透過像での観察対象とする薄膜結晶試料リスト53が表示される。ユーザはこの薄膜結晶試料リスト53から、現在観察している薄膜結晶試料を選択する。試料が選択されると、それに対応した条件がSTEP3以降に設定される。
この処理では、STEP2で決定された試料の格子面間隔dを持った格子像を取得するために、最適な電子ビーム開き角αi、透過電子の検出角βi、およびSTEP1の試料観察で設定されたフォーカスFからのフォーカス変化量ΔFを設定する。ここで格子像とは、薄膜試料を透過した電子の干渉によって得られるコントラスト(位相コントラスト)によって得られる像である。
θB=λ/2d
であり、λは電子の波長で、加速電圧Vaccを用いて
λ=√(1.5/Vacc) (nm)
で求められる。
αi1=2θB+Δαi
の値で定義される。θBは上記の計算式より決定され、またΔαiは、検出角βiとともに、あらかじめ取得された実験結果にもとづき決定される。Δαiは、格子面間隔d、加速電圧Vacc、検出角βi、対物レンズのワーキングディスタンス(WD)に依存する量である。ここで格子面間隔d、加速電圧Vaccは図4でのユーザの入力から決定され、検出角βiおよびワーキングディスタンス(WD)は格子像を取得するときの装置の状態から決まる。よって、予め格子面間隔d、加速電圧Vacc、検出角βi、対物レンズのワーキングディスタンス(WD)に対して最適なΔαiを求めて記憶部35に記憶しておけば、格子像取得時に最適なΔαiを読み出して設定することができる。
STEP3で設定した条件の下で得られた格子像を画像取得部32によって取得する。この格子像は表示装置31上に表示されてもよい。また、画像処理部33により、取得した格子像に対するフーリエ変換(FT)を行い、フーリエ変換パターン(FT情報)を取得する。これにより、所望の格子間隔dが得られているかを確認することができる。所望の格子間隔dが得られている場合には以下に説明する倍率校正は不要であると判断できる。もし所望の格子間隔dが得られていない場合は、その旨を警告するメッセージGUI上に表示することで、測定の信頼性を向上することも可能である。
STEP4で得られた格子像のFT情報から、計算部34によって画像の1画素に対応する寸法を計算し、その結果をもとにSTEP4で得られた格子像の実際の倍率値M′を計算する。
STEP5の結果から、STEP4においてコンピュータ30によって設定されている倍率値Mと、実際の倍率M′との誤差率εを、次式で計算する。
ε=(M-M′)/M′
STEP6で求めた倍率誤差εがゼロになるように、コンピュータ30から偏向制御回路25を通して、上段偏向コイル8および下段偏向コイル10に流れる電流を変更することにより、走査電子顕微鏡の電子ビーム走査幅を校正する。
2 第一陽極
3 一次電子ビーム
4 第二陽極
5 第一収束レンズ
6 対物絞り
7 第二収束レンズ
8 上段偏向コイル
10 下段偏向コイル
12 対物レンズ
13 試料
14 試料微動装置
16 二次電子
17 直交電磁界(EXB)装置
20、42 検出器
21、43 増幅器
22 高電圧制御回路
23 第一収束レンズ制御回路
24 第二収束レンズ制御回路
25 偏向制御回路
26 対物レンズ制御回路
27 試料微動制御回路
28 信号制御回路
30 コンピュータ
31 表示装置
32 画像取得部
33 画像処理部
34 計算部
35 記憶部
36 入力部
41 走査透過電子
44 絞り
45 クロスオーバ位置
51 GUI
52 観察方法選択部分
53 薄膜結晶試料リスト
61 非散乱電子
62 散乱電子
64 信号検出面
65、66 干渉縞
67 検出範囲
68 格子像信号
70 二次電子/走査透過電子像コントラスト
71 格子像コントラスト
Claims (7)
- 電子線を発生する電子源と、
前記電子線で前記試料上を走査するように偏向する偏向器と、
前記試料上に前記電子線を集束する対物レンズと、
前記試料を透過した走査透過電子を検出する検出器と、
前記試料と前記検出器の間に配置され前記走査透過電子の検出角を制御する絞りと、を備え、
前記電子線は所定の開き角で試料に入射し、
前記試料上でビーム径が最小となるような第一の開き角より大きい第二の開き角で格子像を取得することを特徴とする走査透過電子顕微鏡。 - 請求項1に記載の走査透過電子顕微鏡において、
前記第二の開き角はブラッグ角θBの2倍の角度より大きいことを特徴とする走査透過電子顕微鏡。 - 請求項2に記載の走査透過電子顕微鏡において、
前記第一の開き角はブラッグ角θBの2倍の角度より小さいことを特徴とする走査透過電子顕微鏡。 - 請求項1に記載の走査透過電子顕微鏡において、
前記電子線の最大加速電圧は30kV以下であることを特徴とする走査透過電子顕微鏡。 - 請求項1に記載の走査透過電子顕微鏡において、
前記検出器は前記走査透過電子に含まれる散乱電子と非散乱電子との干渉により生じる干渉縞に起因する信号量を検出するものであって、前記電子線を前記試料上で走査することで前記信号量の強度変化を検出し、当該強度変化から前記試料の結晶格子間隔を求める計算部を有することを特徴とする走査透過電子顕微鏡。 - 請求項1に記載の走査透過電子顕微鏡において、
前記格子像を取得するときの条件として、前記第二の開き角と、前記検出角と、前記対物レンズのフォーカス値を前記試料ごとに記憶しておく記憶部を備えることを特徴とする走査透過電子顕微鏡。 - 請求項1または5に記載の走査透過電子顕微鏡において、
前記格子像から前記試料の結晶格子間隔を求め、前記結晶格子間隔に基づいて倍率校正を行うことを特徴とする走査透過電子顕微鏡。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201380021994.9A CN104272426B (zh) | 2012-04-27 | 2013-03-25 | 扫描电子显微镜 |
US14/397,079 US9040911B2 (en) | 2012-04-27 | 2013-03-25 | Scanning electron microscope |
DE112013001852.7T DE112013001852B8 (de) | 2012-04-27 | 2013-03-25 | Rastertransmissionselektronenmikroskop sowie Verfahren zur Durchführung einer Vergrößerungskalibrierung |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012102000A JP5743950B2 (ja) | 2012-04-27 | 2012-04-27 | 走査電子顕微鏡 |
JP2012-102000 | 2012-04-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013161473A1 true WO2013161473A1 (ja) | 2013-10-31 |
Family
ID=49482807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/058482 WO2013161473A1 (ja) | 2012-04-27 | 2013-03-25 | 走査電子顕微鏡 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9040911B2 (ja) |
JP (1) | JP5743950B2 (ja) |
CN (1) | CN104272426B (ja) |
DE (1) | DE112013001852B8 (ja) |
WO (1) | WO2013161473A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110156771A (zh) * | 2018-02-12 | 2019-08-23 | 三星显示有限公司 | 有机电致发光器件和用于有机电致发光器件的杂环化合物 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10170274B2 (en) | 2015-03-18 | 2019-01-01 | Battelle Memorial Institute | TEM phase contrast imaging with image plane phase grating |
US10224175B2 (en) * | 2015-03-18 | 2019-03-05 | Battelle Memorial Institute | Compressive transmission microscopy |
DE102015108893B3 (de) | 2015-06-05 | 2016-02-11 | Carl Von Ossietzky Universität Oldenburg | Elektronenquelle und Verfahren zum Erzeugen eines Elektronenstrahls, Verfahren zum Herstellen einer solchen Elektronenquelle sowie deren Verwendung |
WO2017189212A1 (en) | 2016-04-29 | 2017-11-02 | Battelle Memorial Institute | Compressive scanning spectroscopy |
CN107481913B (zh) | 2016-06-08 | 2019-04-02 | 清华大学 | 一种电子束加工系统 |
CN107473179B (zh) * | 2016-06-08 | 2019-04-23 | 清华大学 | 一种表征二维纳米材料的方法 |
CN107479330B (zh) | 2016-06-08 | 2019-02-05 | 清华大学 | 一种采用电子束的光刻方法 |
CN106876235B (zh) * | 2017-02-21 | 2019-01-01 | 顾士平 | 质子显微镜、波谱仪、能谱仪、微纳加工平台 |
US10295677B2 (en) | 2017-05-08 | 2019-05-21 | Battelle Memorial Institute | Systems and methods for data storage and retrieval |
CN108036739B (zh) * | 2017-11-17 | 2020-01-21 | 宁波大学 | 一种基于移动光阑的显微三维测量系统及方法 |
JP6883705B2 (ja) * | 2018-03-29 | 2021-06-09 | 株式会社日立ハイテク | 荷電粒子線装置 |
CN111919277B (zh) * | 2018-04-02 | 2023-08-01 | 株式会社日立高新技术 | 电子显微镜 |
CN115458379A (zh) * | 2021-06-08 | 2022-12-09 | 清华大学 | 碳纳米管器件及其使用方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56116260A (en) * | 1980-02-19 | 1981-09-11 | Jeol Ltd | Scanning focusing electron beam diffracting device |
JPS6119046A (ja) * | 1984-07-04 | 1986-01-27 | Hitachi Ltd | 収束電子線回折用電子顕微鏡 |
JPH0636729A (ja) * | 1992-07-16 | 1994-02-10 | Hitachi Ltd | 収束電子線回折図形を用いた歪み評価装置およびその評価方法 |
JP2001027619A (ja) * | 1999-07-12 | 2001-01-30 | Nec Corp | 局所領域格子歪測定装置 |
JP2007109509A (ja) * | 2005-10-13 | 2007-04-26 | Fujitsu Ltd | 電磁レンズの球面収差測定方法及び球面収差測定装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3908124A (en) | 1974-07-01 | 1975-09-23 | Us Energy | Phase contrast in high resolution electron microscopy |
US5563415A (en) * | 1995-06-07 | 1996-10-08 | Arch Development Corporation | Magnetic lens apparatus for a low-voltage high-resolution electron microscope |
US6051839A (en) * | 1996-06-07 | 2000-04-18 | Arch Development Corporation | Magnetic lens apparatus for use in high-resolution scanning electron microscopes and lithographic processes |
JP4464857B2 (ja) | 2005-04-05 | 2010-05-19 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
WO2010035386A1 (ja) * | 2008-09-25 | 2010-04-01 | 株式会社日立ハイテクノロジーズ | 荷電粒子線応用装置およびその幾何収差測定方法 |
US8076640B2 (en) | 2009-08-27 | 2011-12-13 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Method and device for measuring electron diffraction of a sample |
JP5315302B2 (ja) * | 2010-07-27 | 2013-10-16 | 株式会社日立ハイテクノロジーズ | 走査透過電子顕微鏡及びその軸調整方法 |
JP6219019B2 (ja) * | 2011-02-25 | 2017-10-25 | エフ・イ−・アイ・カンパニー | 荷電粒子ビーム・システムにおいて大電流モードと小電流モードとを高速に切り替える方法 |
-
2012
- 2012-04-27 JP JP2012102000A patent/JP5743950B2/ja active Active
-
2013
- 2013-03-25 US US14/397,079 patent/US9040911B2/en active Active
- 2013-03-25 CN CN201380021994.9A patent/CN104272426B/zh active Active
- 2013-03-25 WO PCT/JP2013/058482 patent/WO2013161473A1/ja active Application Filing
- 2013-03-25 DE DE112013001852.7T patent/DE112013001852B8/de active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56116260A (en) * | 1980-02-19 | 1981-09-11 | Jeol Ltd | Scanning focusing electron beam diffracting device |
JPS6119046A (ja) * | 1984-07-04 | 1986-01-27 | Hitachi Ltd | 収束電子線回折用電子顕微鏡 |
JPH0636729A (ja) * | 1992-07-16 | 1994-02-10 | Hitachi Ltd | 収束電子線回折図形を用いた歪み評価装置およびその評価方法 |
JP2001027619A (ja) * | 1999-07-12 | 2001-01-30 | Nec Corp | 局所領域格子歪測定装置 |
JP2007109509A (ja) * | 2005-10-13 | 2007-04-26 | Fujitsu Ltd | 電磁レンズの球面収差測定方法及び球面収差測定装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110156771A (zh) * | 2018-02-12 | 2019-08-23 | 三星显示有限公司 | 有机电致发光器件和用于有机电致发光器件的杂环化合物 |
Also Published As
Publication number | Publication date |
---|---|
DE112013001852B4 (de) | 2023-11-16 |
US9040911B2 (en) | 2015-05-26 |
DE112013001852T5 (de) | 2015-01-15 |
DE112013001852B8 (de) | 2024-03-07 |
JP5743950B2 (ja) | 2015-07-01 |
CN104272426A (zh) | 2015-01-07 |
CN104272426B (zh) | 2016-08-24 |
JP2013229267A (ja) | 2013-11-07 |
US20150108351A1 (en) | 2015-04-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5743950B2 (ja) | 走査電子顕微鏡 | |
KR100695978B1 (ko) | 미소영역 물성 계측방법 및 장치 | |
JP4822925B2 (ja) | 透過型電子顕微鏡 | |
JP4464857B2 (ja) | 荷電粒子線装置 | |
EP2091063B1 (en) | Electron beam observation device using a pre-specimen magnetic field as image-forming lens and specimen observation method | |
Guyon et al. | Sub-micron resolution selected area electron channeling patterns | |
JP5745957B2 (ja) | 位相板、および電子顕微鏡 | |
JP7228558B2 (ja) | 透過菊池回折パターンの改良方法 | |
KR20020061641A (ko) | 하전 입자 빔을 사용하여 표본을 검사하는 방법 및 시스템 | |
JP5727564B2 (ja) | 荷電粒子レンズ系における収差を調査及び補正する方法 | |
WO2015015985A1 (ja) | 荷電粒子線装置及び荷電粒子線装置における収差測定法 | |
US10593510B2 (en) | Measuring spherical and chromatic aberrations in cathode lens electrode microscopes | |
US20170092459A1 (en) | Charged-particle-beam device | |
JP5817360B2 (ja) | 走査透過型電子顕微鏡の観察方法及び走査透過型電子顕微鏡 | |
JP2016017966A (ja) | 走査型透過荷電粒子顕微鏡の校正方法 | |
WO2012042738A1 (ja) | 走査電子顕微鏡 | |
US10636622B2 (en) | Scanning transmission electron microscope | |
Tromp | Characterization of the cathode objective lens by real-space microspot low energy electron diffraction | |
JP5174483B2 (ja) | 荷電粒子ビーム装置、及び試料の表面の帯電状態を知る方法 | |
JP2021036215A (ja) | 粒子の観察方法 | |
JP2011009127A (ja) | 荷電粒子線調整方法、及び荷電粒子線装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13782331 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14397079 Country of ref document: US Ref document number: 1120130018527 Country of ref document: DE Ref document number: 112013001852 Country of ref document: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13782331 Country of ref document: EP Kind code of ref document: A1 |