WO2013150812A1 - Appareil de fabrication d'un film ferroélectrique et procédé de fabrication d'un film ferroélectrique - Google Patents

Appareil de fabrication d'un film ferroélectrique et procédé de fabrication d'un film ferroélectrique Download PDF

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WO2013150812A1
WO2013150812A1 PCT/JP2013/051846 JP2013051846W WO2013150812A1 WO 2013150812 A1 WO2013150812 A1 WO 2013150812A1 JP 2013051846 W JP2013051846 W JP 2013051846W WO 2013150812 A1 WO2013150812 A1 WO 2013150812A1
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film
ferroelectric film
seed crystal
ferroelectric
manufacturing
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Japanese (ja)
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健 木島
本多　祐二
武 白土
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株式会社ユーテック
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B5/00—Single-crystal growth from gels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based

Definitions

  • the present invention relates to a ferroelectric film manufacturing apparatus and a ferroelectric film manufacturing method using a seed crystal member.
  • FIG. 11 is a cross-sectional view for explaining a conventional method of manufacturing a ferroelectric film.
  • a Pt film 102 oriented in (001) is formed on a substrate 101 such as a 4-inch wafer.
  • a PZT sol-gel solution is spin-coated on the Pt film 102 by a spin coater. At this time, after rotating at 500 rpm for 5 seconds, it is rotated at 1500 rpm for 20 seconds.
  • the applied PZT sol-gel solution was dried by holding for 30 seconds while heating to 250 ° C. on a hot plate to remove moisture, and then heated to 450 ° C. on a hot plate held at a higher temperature. Pre-baking is performed by holding for 2 seconds.
  • the PZT amorphous film after pre-baking is annealed by holding at 10 ° C. in an oxygen atmosphere at 700 ° C. for 3 minutes using a pressure lamp annealing apparatus (RTA: rapidly thermal anneal), and PZT crystal To do.
  • RTA pressure lamp annealing apparatus
  • This crystallized PZT film has a perovskite structure, the film formation rate from spin coating of the sol-gel solution to crystallization is 2.65 nm / second, and the film formation time is 13 minutes.
  • a PZT film 103 having a film thickness of 2 ⁇ m is formed on the Pt film 102 by the sol-gel method, and this PZT film 103 is oriented in (001) and (110) as shown in FIG.
  • the PZT film 103 manufactured by using the sol-gel method is suitable for mass production because of its high film formation speed. However, since the (001) and (110) orientations are detected in this PZT film 103, the (001) orientation of the underlying Pt film is not completely transferred. Is very low.
  • An object of one embodiment of the present invention is to provide an apparatus for manufacturing a ferroelectric film and a method for manufacturing a ferroelectric film that have a high single orientation or high priority orientation even when the sol-gel method is used.
  • a processing chamber A holding unit for holding a substrate having an amorphous film including a ferroelectric material, which is disposed in the processing chamber and formed by a sol-gel method; A mechanism for bringing a seed crystal member into contact with the amorphous film held by the holding unit; A gas introduction mechanism for introducing oxygen gas into the processing chamber; A gas exhaust mechanism for exhausting the gas in the processing chamber; A heating mechanism for heating the processing chamber; Comprising A ferroelectric film is manufactured by oxidizing and crystallizing the amorphous film by heating in an oxygen atmosphere while bringing the seed crystal member into contact with the amorphous film. apparatus.
  • the seed crystal member is a seed crystal film epitaxially grown by a sputtering method or a CVD method or a single crystal bulk produced by a Bridgman method.
  • the ferroelectric film is ABO 3 or (Bi 2 O 2 ) 2+ (A m ⁇ 1 B m O 3m + 1 ) 2 ⁇ (where A is Li, Na, K, Rb, Pb, Ca, Sr, Ba, Bi, La, and Hf) At least one selected from the group consisting of B, B is at least one selected from the group consisting of Ru, Fe, Ti, Zr, Nb, Ta, V, W and Mo, and m is a natural number of 5 or less.) Perovskite or bismuth layered structure oxide represented by LanBa 2 Cu 3 O 7, Trm 2 Ba 2 Ca n-1 Cu n O 2n + 4 or TrmBa 2 Ca n-1 Cu n O 2n + 3 ( wherein, Lan is Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and at least one selected from the group consisting of Lu, Trm
  • the gas introduction mechanism is a mechanism for introducing the pressurized oxygen gas into the processing chamber.
  • the apparatus for producing a ferroelectric film according to claim 1 wherein the gas introduction mechanism is a mechanism that pressurizes the processing chamber to 4 atm or more by introducing the oxygen gas into the processing chamber.
  • the mechanism for bringing the seed crystal member into contact with the amorphous film is a mechanism for bringing the seed crystal member into contact with the amorphous film under a certain pressure.
  • the seed crystal member is a Pb (Zr, Ti) O 3 film or a (Pb, A) (Zr, Ti) O 3 film whose Zr / Ti ratio satisfies the following formula (1):
  • A is a ferroelectric film manufacturing apparatus characterized in that A is at least one selected from the group consisting of Li, Na, K, Rb, Ca, Sr, Ba, Bi, and La. 60/40 ⁇ Zr / Ti ⁇ 40/60 (1)
  • the seed crystal member is oriented to (001), An apparatus for manufacturing a ferroelectric film, wherein the ferroelectric film is oriented in (001).
  • the seed crystal member is oriented in (111)
  • the ferroelectric film is a Pb (Zr, Ti) O 3 film or a (Pb, A) (Zr, Ti) O 3 film whose Zr / Ti ratio satisfies the following formula (4):
  • A is a ferroelectric film manufacturing apparatus characterized in that A is at least one selected from the group consisting of Li, Na, K, Rb, Ca, Sr, Ba, Bi, and La. 60/40 ⁇ Zr / Ti ⁇ 40/60 (4)
  • the heating mechanism is a mechanism for irradiating lamp light into the processing chamber by a lamp heater.
  • An amorphous film containing a ferroelectric material is formed on a substrate by a sol-gel method, By heating in an oxygen atmosphere while bringing a seed crystal member into contact with the amorphous film, the amorphous film is oxidized and crystallized to form a ferroelectric film, A method of manufacturing a ferroelectric film, wherein the seed crystal member is separated from the ferroelectric film.
  • the ferroelectric film is ABO 3 or (Bi 2 O 2 ) 2+ (A m ⁇ 1 B m O 3m + 1 ) 2 ⁇ (where A is Li, Na, K, Rb, Pb, Ca, Sr, Ba, Bi, La, and Hf) At least one selected from the group consisting of B, B is at least one selected from the group consisting of Ru, Fe, Ti, Zr, Nb, Ta, V, W and Mo, and m is a natural number of 5 or less.) Perovskite or bismuth layered structure oxide represented by LanBa 2 Cu 3 O 7, Trm 2 Ba 2 Ca n-1 Cu n O 2n + 4 or TrmBa 2 Ca n-1 Cu n O 2n + 3 ( wherein, Lan is Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and at least one selected from the group consisting of Lu,
  • the seed crystal film is a Pb (Zr, Ti) O 3 film or a (Pb, A) (Zr, Ti) O 3 film whose Zr / Ti ratio satisfies the following formula (1):
  • A is made of at least one selected from the group consisting of Li, Na, K, Rb, Ca, Sr, Ba, Bi and La. 60/40 ⁇ Zr / Ti ⁇ 40/60 (1)
  • the seed crystal film is oriented to (001)
  • the seed crystal film is oriented to (111), A method of manufacturing a ferroelectric film, wherein the ferroelectric film is oriented to (111).
  • the ferroelectric film is a Pb (Zr, Ti) O 3 film or a (Pb, A) (Zr, Ti) O 3 film whose Zr / Ti ratio satisfies the following formula (4):
  • A is made of at least one selected from the group consisting of Li, Na, K, Rb, Ca, Sr, Ba, Bi and La. 60/40 ⁇ Zr / Ti ⁇ 40/60 (4)
  • a crystallized ferroelectric film, The ferroelectric film is a Pb (Zr, Ti) O 3 film or a (Pb, A) (Zr, Ti) O 3 film unidirectionally oriented to (001),
  • A is a ferroelectric film characterized in that A is at least one selected from the group consisting of Li, Na, K, Rb, Ca, Sr, Ba, Bi, and La.
  • the present invention it is possible to provide a ferroelectric film manufacturing apparatus and a ferroelectric film manufacturing method having high single orientation or high priority orientation even when the sol-gel method is used.
  • FIG. 1 is a cross-sectional view for explaining a method of manufacturing a ferroelectric film according to one embodiment of the present invention.
  • the contact substrate 20 having the seed crystal member 13 is prepared.
  • a (001) -oriented SrRuO 3 film (not shown) is formed on the silicon wafer 11, and a (001) -oriented Pt film 12 is formed on the SrRuO 3 film. It is preferable to use the one having the seed crystal member 13 formed thereon.
  • a seed crystal film oriented on the seed crystal member 13 may be used.
  • the seed crystal film a film epitaxially grown by a sputtering method or a CVD method can be used.
  • a single crystal bulk produced by the Bridgman method may be used as the contact substrate 20, or a LiNbO 3 or LiTaO 3 single crystal generally marketed as a substrate may be used.
  • the seed crystal film for example, a Pb (Zr, Ti) O 3 film or a (Pb, A) (Zr, Ti) O 3 film whose Zr / Ti ratio satisfies the following formula (1) is used.
  • A may be made of at least one selected from the group consisting of Li, Na, K, Rb, Ca, Sr, Ba, Bi, and La. 60/40 ⁇ Zr / Ti ⁇ 40/60 (1)
  • Each element ratio of the Pb (Zr, Ti) O 3 film satisfies the following formula (2), and preferably satisfies the following formula (2 ′).
  • Each element number ratio of the (Pb, A) (Zr, Ti) O 3 film satisfies the following formula (3), and preferably satisfies the following formula (3 ′).
  • a substrate to be processed 22 having an amorphous film 16 containing a ferroelectric material is prepared. Specifically, for example, a (001) -oriented SrRuO 3 film (not shown) is formed on the silicon wafer 14, a (001) -oriented Pt film 15 is formed on the SrRuO 3 film, and a strong Pt film 15 is formed on the Pt film 15. An amorphous film 16 containing a dielectric material is formed by a sol-gel method. In this way, the substrate 22 to be processed is prepared.
  • the amorphous film 16 is formed on the silicon wafer 14 via the SrRuO 3 film and the Pt film 15, but the amorphous film is formed on the silicon wafer 14 via another conductive film or insulating film. 16 may be formed.
  • the contact substrate 20 is placed on the substrate 22 to be processed, and the seed crystal member 13 and the amorphous film 16 are oxygenated while the seed crystal member 13 is in contact with the amorphous film 16.
  • Heat in atmosphere the ferroelectric film can be formed by oxidizing and crystallizing the amorphous film 16.
  • the seed crystal member 13 and the amorphous film 16 are preferably heated in a pressurized oxygen atmosphere, and more preferably heated in a pressurized oxygen atmosphere of 4 atm or more. As a result, a ferroelectric film having stronger single orientation can be obtained.
  • the contact between the amorphous film 16 and the seed crystal member 13 does not need to be in surface contact at the molecular level (it does not need to be completely in close contact), but is preferably a point contact assembly.
  • the reason for this is that the crystal with strong single orientation of the seed crystal member 13 in the point contact is transferred to the amorphous film 16 preferentially over the crystal with weak single orientation, and thereby the amorphous film 16 is transferred to the amorphous film 16.
  • a crystal having a strong single orientation is formed, and the crystal having a strong single orientation spreads in the direction parallel to and perpendicular to the surface of the amorphous film 16, so that the single orientation is stronger than that of the seed crystal member 13.
  • the surface of the seed crystal member 13 may be smaller than the surface of the amorphous film 16, and in that case, a crystal having a strong single orientation is formed in the amorphous film 16, and the crystal having a strong single orientation is the amorphous film 16.
  • the entire amorphous film 16 can be made into a crystal having a strong single orientation.
  • the seed crystal member 13 is brought into contact with the amorphous film 16, it is preferable that the seed crystal member 13 is pressed and brought into contact with the amorphous film 16 at a constant pressure.
  • a ferroelectric film with stable quality can be obtained by setting a constant pressure.
  • the ferroelectric film has the same orientation as that of the seed crystal member 13. For example, when the seed crystal member 13 is oriented to (001), the ferroelectric film is also oriented to (001), and when the seed crystal member 13 is oriented to (111), The ferroelectric film is also oriented to (111).
  • the Zr / Ti ratio is expressed by the following formula (5 ),
  • the seed crystal member 13 can be easily oriented to (001). 52/48 ⁇ Zr / Ti ⁇ 40/60 (5)
  • the Zr / Ti ratio is expressed by the following formula (6 ),
  • the seed crystal member 13 can be easily oriented to (111). 60/40 ⁇ Zr / Ti ⁇ 52/48 (6)
  • the seed crystal member 13 is separated from the ferroelectric film. Since the seed crystal member 13 is only in contact with the amorphous film 16, the seed crystal member 13 can be easily peeled off from the ferroelectric film.
  • the seed crystal member 13 plays a role as an initial nucleus when the amorphous film 16 is crystallized, it can be used for a plurality of amorphous films 16. That is, if one contact substrate 20 is prepared, it can be used for a plurality of substrates 22 to be processed, which is economical. For this reason, the manufacturing cost of the ferroelectric film can be reduced. In addition, since the ferroelectric film of the plurality of substrates to be processed 22 can be manufactured for the seed crystal member 13 of the single contact substrate 20, the variation of the ferroelectric film can be reduced, and the ferroelectric film can be reproduced. Can be improved. Therefore, the quality control of the ferroelectric film to be manufactured becomes easy.
  • the ferroelectric film may be a film made of at least one of the following (1) to (6).
  • perovskite and bismuth layered structure oxide represented by) (2) LanBa 2 Cu 3 O 7, Trm 2 Ba 2 Ca n-1 Cu n O 2n + 4 or TrmBa 2 Ca n-1 Cu n O 2n + 3
  • Lan is at least one selected from the group consisting of Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu
  • Trm is Bi, Tl.
  • Hg At least one selected from the group consisting, n represents 5 or less is a natural number.
  • Superconducting oxide represented by) (3) A 0.5 BO 3 ( tetragonal bronze structure) or A 0.3 BO 3 ( (Hexagonal bronze structure) (wherein A is at least one selected from the group consisting of Li, Na, K, Rb, Cs, Pb, Ca, Sr, Ba, Bi and La, B is Ru, Fe, Ti, It is at least one selected from the group consisting of Zr, Nb, Ta, V, W and Mo.) (4) CaO, BaO, PbO, ZnO, MgO, B 2 O 3 , Al 2 O 3 , Y 2 O 3 , La 2 O 3 , Cr 2 O 3 , Bi 2 O 3 , Ga 2 O 3 , ZrO 2 , TiO 2 , HfO 2 , NbO 2 , MoO 3 , WO 3 and It is selected from the group consisting of V 2 O 5 At least one kind of material, (5) The material containing SiO 2 in the at least one material (6) The material containing SiO 2
  • ferroelectric film examples include a Pb (Zr, Ti) O 3 film or a (Pb, A) (Zr, Ti) O 3 film whose Zr / Ti ratio satisfies the following formula (4).
  • A may be made of at least one selected from the group consisting of Li, Na, K, Rb, Ca, Sr, Ba, Bi, and La. 60/40 ⁇ Zr / Ti ⁇ 40/60 (4)
  • a ferroelectric film manufactured using a sol-gel method can increase single orientation or preferential orientation.
  • the seed crystal member 13 that is single-oriented or preferentially oriented and has very good crystallinity is brought into contact with the amorphous film 16 and heated as an initial nucleus to be crystallized by heating in an oxygen atmosphere.
  • a ferroelectric film having the same orientation as that of the seed crystal member 13 can be formed.
  • the single orientation or the preferential orientation of the seed crystal member 13 having very good crystallinity can be faithfully transferred to the ferroelectric film using the sol-gel method.
  • a ferroelectric film having a single orientation or preferential orientation and good crystallinity can be obtained.
  • the ferroelectric film 15 using the sol-gel method crystallized by being brought into contact with the seed crystal member 13 has the same crystal structure as that of the seed crystal member 13. Further, the crystal structure of the ferroelectric film can be controlled by bringing the ferroelectric film into contact with the seed crystal member 13 whose crystal structure is determined.
  • the deposition rate of the ferroelectric film using the sol-gel method is very fast compared to the deposition rate of the ferroelectric film that is epitaxially grown by, for example, the sputtering method.
  • the manufacturing method of the ferroelectric film according to one embodiment of the present invention in which the ferroelectric film is formed on the seed crystal member 13 using the sol-gel method has a deposition rate suitable for mass production.
  • the contact substrate 20 is placed on the substrate 22 to be processed, and the seed crystal member 13 and the amorphous film 16 are heated in an oxygen atmosphere while the amorphous crystal 16 is in contact with the seed crystal member 13.
  • the organic solvent shown in Table 1 is used as the amorphous film 16 and the seed crystal member 13.
  • the seed crystal member 13 and the amorphous film 16 may be heated and crystallized in an oxygen atmosphere while being filled with capillarity. As a result, it is possible to generate a ferroelectric film having a stronger single orientation.
  • the organic solvent in this case is preferably an alcohol that is difficult to dry.
  • ⁇ Ferroelectric film manufacturing equipment> 2 and 3 are cross-sectional views illustrating a pressure-type lamp annealing apparatus 30 according to one embodiment of the present invention.
  • the pressurization type lamp annealing apparatus 30 has an Al chamber 21.
  • the inner surface of the chamber 21 is subjected to surface treatment. That is, a reflective film is formed on the inner surface of the chamber 21.
  • a specific surface treatment Au plating treatment or oxalic acid alumite treatment can be used. Thereby, an Au plating film or an oxalate alumite film is formed on the inner surface of the chamber 21, and the lamp light can be reflected by the Au plating film or the oxalate alumite film.
  • the temperature increase rate can be increased.
  • power consumption can be reduced.
  • the chamber 21 is configured to be water cooled by a cooling mechanism (not shown).
  • the stage 23 is made of a material that transmits lamp light, for example, quartz.
  • a quartz glass 24 is disposed above the stage 23.
  • the quartz glass 24 is formed thick because the inside of the chamber 21 is pressurized.
  • a lamp heater 25 is disposed on the quartz glass 24, and this lamp heater 25 is disposed inside a metal casing. In this embodiment, a lamp heater is used, but another heating mechanism may be used.
  • the pressure-type lamp annealing apparatus 30 has a mechanism for bringing the seed crystal member into contact with the amorphous film of the substrate 22 to be processed placed on the stage 23. Specifically, it has a moving mechanism 26 that moves the shaft 27 up and down, and the contact substrate 20 shown in FIG.
  • the moving mechanism 26 is preferably a mechanism that presses the seed crystal member against the amorphous film at a constant pressure.
  • a ferroelectric film with stable quality can be obtained by setting a constant pressure.
  • the processing chamber 55 formed in the chamber 21 is preferably narrow. This is because the time required to pressurize to a predetermined pressure can be shortened. Further, the height in the processing chamber 55 is preferably low. The reason is that the distance between the substrate 22 to be processed and the lamp heater 25 disposed in the processing chamber 55 can be shortened, thereby increasing the temperature raising rate.
  • the processing chamber 55 in the chamber 21 is connected to a pressurization line (gas introduction mechanism) 29.
  • the pressurization line 29 has a pressurization line using argon gas, a pressurization line using oxygen gas, and a pressurization line using nitrogen gas.
  • Each of the argon gas pressurization line, the oxygen gas pressurization line and the nitrogen gas pressurization line has a heating unit, and the heating unit has a constant gas temperature (for example, 40 to 50) in order to stabilize the process. °C).
  • the processing chamber 55 in the chamber 21 is connected to a pressure adjustment line (gas exhaust mechanism) 28.
  • the pressure adjusting line 28 and the pressurizing line 29 can pressurize the processing chamber 55 in the chamber 21 to a predetermined pressure (for example, less than 1 MPa).
  • the pressure adjustment line 28 has a safety line, and this safety line is used to lower the inside of the processing chamber to atmospheric pressure when the inside of the processing chamber 55 is excessively pressurized and exceeds a certain pressure. It is.
  • the pressure adjustment line 28 has an atmosphere release line, and this atmosphere release line returns the inside of the processing chamber 55 that has been normally pressurized to atmospheric pressure.
  • the pressure adjustment line 28 has a line for returning the inside of the processing chamber 55 from the reduced pressure state to the atmospheric pressure, and this line reduces the pressure when the inside of the processing chamber 55 is in a reduced pressure state (vacuum state). It returns to atmospheric pressure from the state.
  • a gate valve (not shown) is arranged on one side of the chamber 21, and the substrate 22 to be processed is carried into and out of the processing chamber 55 in the chamber 21 with the gate valve opened. .
  • FIG. 4 is a schematic diagram showing an overall configuration of a ferroelectric film manufacturing apparatus according to an aspect of the present invention, and this manufacturing apparatus includes a pressure-type lamp annealing apparatus 30 shown in FIGS. 2 and 3. Yes.
  • This ferroelectric film manufacturing apparatus has a transfer chamber.
  • a spin coater 45 In this transfer chamber, a spin coater 45, an annealing apparatus 46 for drying at a temperature of 150 ° C. to 300 ° C., for example, 300 in a nitrogen atmosphere or an inert gas atmosphere.
  • Annealing apparatus 47 for pre-baking at a temperature of up to 600 ° C. and normal pressure, a pressure lamp annealing apparatus (RTA) 30 shown in FIG. 2, a cooling apparatus 43 for performing cooling processing, an aligner 42 for performing alignment processing, and load / unload
  • a cassette stage 41 for carrying out the transfer and a transfer robot 44 for transferring the substrate to be processed are arranged.
  • the transfer robot 44 is a mechanism for transferring the substrate to be processed to the spin coater 45, the cassette stage 42, the aligner 42, the cooling device 43, the annealing devices 46 and 47, and the pressure type lamp annealing device 30.
  • This manufacturing apparatus is provided with an air conditioning mechanism for adjusting the amount of dust in the air in the transfer chamber.
  • This air conditioning mechanism can be reduced compared to the outside air.
  • This air conditioning mechanism can also control the temperature or humidity in the transfer chamber.
  • the cassette stage 41 has a plurality of substrates to be processed.
  • the aligner 42 performs processing for detecting the center position of the surface of the substrate 22 to be processed.
  • the annealing apparatus 46 is an apparatus that performs a drying process on the amorphous film coated on the substrate 22 by the spin coater 45.
  • This drying process is, for example, a process for removing alcohol, moisture, and the like in the amorphous film.
  • a hot plate (not shown) for holding and heating the substrate to be processed 22 is disposed.
  • the hot plate 42 can heat the substrate 22 to be processed to a desired temperature (for example, 200 ° C.).
  • the annealing apparatus 47 is an apparatus for performing temporary firing at a desired temperature (for example, 300 ° C. to 600 ° C.) in a nitrogen atmosphere on the amorphous film coated on the substrate 22 to be processed.
  • a lamp heater (not shown) for holding and heating the substrate to be processed 22 is disposed.
  • the lamp heater can heat the substrate 22 to be processed to a desired temperature.
  • the annealing device 47 has a gas introduction mechanism for making the processing chamber a predetermined atmosphere, and an exhaust system (such as a vacuum pump) for exhausting the processing chamber.
  • the gas introduction mechanism introduces nitrogen, for example.
  • the RTA 30 is a pressure-type lamp annealing apparatus shown in FIGS. 2 and 3, and is an apparatus for performing a lamp annealing process on the amorphous film applied on the substrate 22 to be processed at a temperature of 500 to 1000 ° C., for example.
  • This lamp annealing treatment can be performed in either a pressurized state or a normal pressure state.
  • the cooling device 43 is a device for cooling the substrate to be processed 22 that has been subjected to a drying process, a temporary baking process, a lamp annealing process, or the like.
  • This ferroelectric film is, for example, a PZT film.
  • the substrate to be processed in the cassette stage 41 is transferred to the alignment processing chamber of the aligner 44 by the transfer robot 44, and this substrate to be processed is held by the holding mechanism of the alignment processing chamber.
  • the amount of dust in the air is adjusted in the transfer chamber by the air conditioning mechanism, and the amount of dust in the air is adjusted in the alignment processing chamber by the air conditioning mechanism.
  • processing for detecting the center position of the surface of the substrate to be processed is performed in the alignment processing chamber of the aligner 44. This processing is performed in order to detect the center position of the substrate surface and to match the center position of the substrate surface with the rotation center of the substrate when performing the spin coating process.
  • the gate valve (not shown) of the spin coat processing chamber of the spin coater 45 is opened, and the substrate to be processed in the alignment processing chamber of the aligner 42 is transferred into the spin coat processing chamber by the transfer robot 44, and this substrate to be processed is spun.
  • the gate valve is closed by the holding mechanism in the coating processing chamber. At this time, the amount of dust in the air is adjusted in the spin coat processing chamber by an air conditioning mechanism.
  • the substrate to be processed is rotated while supplying the cleaning liquid onto the substrate to be processed by the cleaning nozzle. Thereby, the surface of the substrate to be processed is cleaned.
  • the supply of the cleaning liquid is stopped, and the substrate to be processed is rotated to remove the cleaning liquid on the substrate to be processed.
  • the substrate to be processed is rotated while dropping the chemical material onto the substrate to be processed by the dropping nozzle.
  • the cleaning liquid is dropped onto the edge of the substrate surface by the edge rinse nozzle. Thereby, a chemical material film is applied on the substrate to be processed.
  • the reason for dropping the cleaning liquid on the edge of the substrate surface is that when the film is applied onto the substrate to be processed by spin coating, the film thickness of the edge of the substrate to be processed is formed thicker than the center of the substrate to be processed. This is because the film at the end of the film is applied while being removed with a cleaning liquid. Accordingly, it is preferable to move the edge rinse nozzle little by little from the end of the substrate to be processed to the center, thereby gradually moving the position where the cleaning liquid is dropped from the end of the substrate to be processed to the center.
  • the gate valve of the spin coat processing chamber of the spin coater 45 is opened, and the substrate to be processed in the spin coat processing chamber is transferred to the drying processing chamber of the annealing apparatus 46 by the transfer robot 44, and this substrate to be processed is held in the drying processing chamber. Hold by mechanism and close gate valve.
  • a step of drying the chemical material film on the substrate to be processed is performed in the drying processing chamber of the annealing apparatus 46. This process will be described in detail below. While the air on the surface of the film applied on the substrate to be processed is exhausted by the exhaust mechanism, the substrate to be processed is heated to, for example, 200 to 250 ° C. by the hot plate. Thereby, moisture and the like in the chemical material film are removed.
  • the gate valve of the pre-baking chamber of the annealing apparatus 47 is opened, the substrate in the drying processing chamber is transferred into the pre-baking chamber by the transfer robot 44, and the substrate to be processed is held by the holding mechanism in the pre-baking chamber. Close the gate valve.
  • a step of pre-baking the chemical material film on the substrate to be processed in the pre-baking chamber of the annealing apparatus 47 is performed. Specifically, after the pre-baking chamber is evacuated by an exhaust system, the pre-baking chamber is brought to normal pressure in a vacuum atmosphere, a nitrogen atmosphere or an inert gas atmosphere by a gas introduction mechanism, and a lamp heater is used on the substrate to be processed. Temporary baking is performed by heating the chemical material film to a desired temperature (for example, 300 ° C. to 600 ° C.).
  • the gate valve is opened, and the substrate to be processed in the temporary baking chamber of the annealing device 47 is transferred to the cooling chamber of the cooling device 43 by the transfer robot 44, and this substrate to be processed is held by the holding mechanism in the cooling chamber. Close the gate valve. Thereafter, the substrate to be processed is cooled to a predetermined temperature in the cooling processing chamber.
  • the substrate in the cooling processing chamber is transferred into the alignment processing chamber of the aligner 42 by the transfer robot 44, and processing is performed to detect the center position of the surface of the processing substrate in the alignment processing chamber.
  • the gate valve of the spin coat processing chamber of the spin coater 45 is opened, the substrate to be processed in the alignment processing chamber is transferred into the spin coating processing chamber by the transfer robot 44, and this substrate to be processed is held by the holding mechanism in the spin coating processing chamber. And close the gate valve.
  • a plurality of chemical material films are laminated and formed on the substrate by repeating the spin coating process, the drying process, and the pre-baking process a plurality of times (for example, 30 times) in the same manner as described above.
  • a thicker film for example, a film thickness of 1 ⁇ m or more
  • the productivity can be improved by using the ferroelectric film manufacturing apparatus described above. Specifically, by operating the ferroelectric film manufacturing apparatus as described above by the control unit (not shown), the spin coating process, the drying process, and the pre-baking process can be automatically performed.
  • the gate valve of the pre-baking chamber of the annealing apparatus 47 is opened, the gate valve of the pressurizing lamp annealing apparatus 30 is opened, and the substrate to be processed in the pre-baking chamber is transferred into the annealing chamber of the RTA 30 by the transfer robot 44. .
  • the substrate 22 to be processed is held by the stage 23, and the gate valve is closed. It is preferable that the transfer time for transferring the substrate 22 to be processed into the annealing chamber 55 from the pre-baking chamber is 10 seconds or less.
  • the reasons for shortening the transport time are as follows. If the transport time is long, the characteristics of the ferroelectric film are greatly affected. Specifically, after the pre-baking, the chemical material film has a very high oxygen activity and is in an oxygen-deficient state, so that it is combined with oxygen in the atmosphere and the film characteristics deteriorate. Therefore, it is preferable to shorten the conveyance time.
  • a step of performing a lamp annealing process on a plurality of layers of chemical material films on the substrate 22 to be processed in the annealing chamber 55 is performed.
  • a method of using the pressure type lamp annealing apparatus 30 will be described in detail with reference to FIGS.
  • the contact substrate 20 attached to the tip of the shaft 27 is moved downward by the moving mechanism 26 as shown in FIG.
  • the contact substrate 20 is placed on the substrate 22 to be processed, and the seed crystal member 13 is brought into contact with the amorphous film 16.
  • a force for pressing the contact substrate 20 against the substrate to be processed 22 may be applied.
  • the seed crystal member 13 and the amorphous film 16 are heated in an oxygen atmosphere while the contact substrate 20 is in contact with the substrate 22 to be processed.
  • the ferroelectric film can be formed by oxidizing and crystallizing the amorphous film 16.
  • the seed crystal member 13 and the amorphous film 16 may be heated in a pressurized oxygen atmosphere, and preferably in a pressurized oxygen atmosphere of 4 atm or more.
  • the substrate 22 to be processed in the annealing chamber of the RTA 30 is transferred into the cassette stage 41 by the transfer robot 44, and the substrate to be processed is accommodated.
  • the contact substrate 20 is placed on the substrate 22 to be processed.
  • the substrate 22 and the contact substrate 20 may be upside down or arranged on the left and right.
  • FIG. 5 is a cross-sectional view for explaining a pressure-type lamp annealing apparatus 31 according to an aspect of the present invention, and the same portions as those in FIGS. 2 and 3 are denoted by the same reference numerals.
  • FIG. 6 is a schematic diagram showing the overall configuration of a ferroelectric film manufacturing apparatus according to an aspect of the present invention, and this manufacturing apparatus has a pressure-type lamp annealing apparatus 31 shown in FIG.
  • the ferroelectric film manufacturing apparatus shown in FIG. 6 differs from the ferroelectric film manufacturing apparatus shown in FIG. 4 in that the single crystal substrate stage 48 is not provided.
  • the single crystal substrate stage 48 is a stage that accommodates the contact substrate 20 shown in FIG.
  • the gate valve of the pre-baking chamber of the annealing apparatus 47 is opened, the gate valve of the pressurizing lamp annealing apparatus 31 is opened, and the substrate to be processed in the pre-baking chamber is annealed by the transfer robot 44.
  • the process until it is transported indoors is the same as that in the first embodiment.
  • the contact substrate 20 is taken out from the single crystal substrate stage 48 by the transfer robot 44, and the contact substrate 20 is removed.
  • the substrate 20 is transferred into the processing chamber 55, the contact substrate 20 is placed on the substrate 22 to be processed, and the seed crystal member 13 is brought into contact with the amorphous film 16. Then, the gate valve is closed.
  • the ferroelectric film can be formed by oxidizing and crystallizing the amorphous film 16 by the pressure type lamp annealing apparatus 31 in the same manner as in the first embodiment.
  • a substrate 22 to be processed was manufactured using the ferroelectric film manufacturing apparatus shown in FIGS. This will be described in detail below.
  • a silicon oxide film having a thickness of 300 nm is formed on the 6-inch Si wafer 14, and a TiO 2 film having a thickness of 10 nm is formed on the silicon oxide film.
  • a first Pt film is formed on the TiO 2 film at a temperature of 550 to 650 ° C. by sputtering.
  • the film was formed in a film formation time of 25 minutes with a power output of argon gas pressure 0.4 Pa and DC power 100W.
  • a second Pt film is formed on the first Pt film at room temperature by a vapor deposition method.
  • the film was formed for 4 minutes with a power output of 3.3 ⁇ 10 ⁇ 3 Torr and 10 kV.
  • a first coating film is formed on the Pt film 15 by applying a sol-gel solution on the Pt film 15 by spin coating. Specifically, 500 ⁇ L of the sol-gel solution was applied, the pressure was increased to 0 to 1500 rpm, held at 1500 rpm for 30 seconds, then rotated at 3000 rpm for 10 seconds and then stopped.
  • this applied PZT sol-gel solution was heated and dried on a hot plate at 250 ° C. for 30 seconds and dried to remove moisture, and then heated to 450 ° C. on a hot plate held at a higher temperature. Pre-baking is performed by holding for 2 seconds.
  • the contact substrate 20 has a seed crystal film 13 on the surface, and the seed crystal film 13 is a PZT film having a perovskite structure oriented in (001) and having very good crystallinity.
  • the partial pressure of oxygen is 10 atm, 5 atm, and 1 atm using a pressure lamp annealing apparatus (RTA: rapidly thermal anneal) while bringing the seed crystal film 13 of the contact substrate 20 into contact with the PZT amorphous film after the preliminary firing.
  • RTA pressure lamp annealing apparatus
  • PZT crystallization is performed by annealing at a temperature of 700 ° C. for 20 minutes in an oxygen atmosphere. In this manner, the sample PZT film of the example using three types of oxygen partial pressures was produced.
  • a sample was prepared under the same conditions as in the above example except that the contact substrate 20 was not contacted and the oxygen partial pressure was 10 atm.
  • FIG. 7 is a diagram showing the results of evaluating the crystallinity of a sample PZT film produced at an oxygen partial pressure of 10 atm by XRD diffraction.
  • FIG. 8 is a diagram showing the results of evaluating the crystallinity of a sample PZT film produced at an oxygen partial pressure of 5 atm by XRD diffraction.
  • the ferroelectric film shown in FIG. 7 or 8 is a PZT film unidirectionally oriented to (001).
  • a PZT film is shown; however, by applying one embodiment of the present invention, a Pb (Zr, Ti) O 3 film or a (Pb, A) Zr, Ti) O 3 film, and A realizes a ferroelectric film made of at least one selected from the group consisting of Li, Na, K, Rb, Ca, Sr, Ba, Bi, and La. Can do.
  • FIG. 9 is a diagram showing the results of evaluating the crystallinity of a sample PZT film produced at an oxygen partial pressure of 1 atm by XRD diffraction. As shown in FIG. 9, even with a PZT film formed by a sol-gel method, a PZT film preferentially oriented to (001) could be produced.
  • FIG. 10 is a diagram showing the results of evaluating the crystallinity of a PZT film of a comparative example prepared at an oxygen partial pressure of 10 atm by XRD diffraction. As shown in FIG. 10, even when the oxygen partial pressure was set to 10 atm, a PZT film having extremely low crystallinity as a whole (very low peak intensity) and preferentially oriented to (110) was obtained.
  • the perovskite structure of the seed crystal film of the contact substrate makes it easy to crystallize the PZT of the substrate to be processed, and if any part is crystallized, it is confirmed that the amorphous part next to the crystal is easily crystallized. did it.

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Abstract

L'invention a pour but de proposer un appareil de fabrication d'un film ferroélectrique et un procédé de fabrication d'un film ferroélectrique, le film ferroélectrique ayant une orientation unique élevée ou une orientation préférée élevée même si le film ferroélectrique est formé à l'aide d'un procédé sol-gel. A cet effet, un mode de réalisation de la présente invention concerne un procédé de fabrication d'un film ferroélectrique, qui est caractérisé en ce que : un film amorphe (16) contenant une matière ferroélectrique est formé sur un substrat à l'aide d'un procédé sol-gel ; un film ferroélectrique est formé par l'oxydation et la cristallisation du film amorphe (16) par chauffage du film amorphe (16) dans une atmosphère d'oxygène, tout en ayant un élément de cristal germe (13) en contact avec le film amorphe (16) ; puis l'élément de cristal germe (13) est séparé du film ferroélectrique.
PCT/JP2013/051846 2012-04-06 2013-01-29 Appareil de fabrication d'un film ferroélectrique et procédé de fabrication d'un film ferroélectrique WO2013150812A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104193333A (zh) * 2014-08-18 2014-12-10 曹静 一种(Bi0.46Na0.46Ba0.06La0.02)ZrxTi(1-x)O3反铁电陶瓷的制备方法
WO2016121204A1 (fr) * 2015-01-26 2016-08-04 株式会社ユーテック Dispositif de recuit à lampe de type sous pression, film ferroélectrique et son procédé de production
CN113539812A (zh) * 2021-07-14 2021-10-22 湘潭大学 一种同质种子层调控氧化铪基铁电薄膜电学性能的方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04267518A (ja) * 1991-02-22 1992-09-24 Hokuriku Electric Ind Co Ltd 半導体薄膜素子の製造方法
JPH06107489A (ja) * 1992-09-28 1994-04-19 Rohm Co Ltd 結晶性薄膜製造方法
JPH06107491A (ja) * 1992-09-28 1994-04-19 Rohm Co Ltd 結晶性薄膜製造方法
JP2001135876A (ja) * 1999-11-02 2001-05-18 Seiko Epson Corp 圧電体薄膜あるいは強誘電体薄膜の製造方法
JP2004281900A (ja) * 2003-03-18 2004-10-07 Seiko Epson Corp セラミックス膜の製造方法およびこれに用いる加圧型熱処理装置
WO2006087777A1 (fr) * 2005-02-16 2006-08-24 Youtec Co., Ltd. Dispositif de recuit de lampe de pressurisation, procédé de recuit de lampe de pressurisation, film mince et composante électronique
JP2009094526A (ja) * 2008-11-13 2009-04-30 Seiko Epson Corp 強誘電体膜形成用ゾルゲル溶液、強誘電体膜形成用ゾルゲル溶液の製造方法、強誘電体膜、強誘電体メモリ、圧電素子および焦電素子
JP2010228956A (ja) * 2009-03-26 2010-10-14 Kanagawa Acad Of Sci & Technol 薄膜形成方法及びデバイスの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06107941A (ja) * 1992-09-25 1994-04-19 Asahi Glass Co Ltd 硬化性組成物

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04267518A (ja) * 1991-02-22 1992-09-24 Hokuriku Electric Ind Co Ltd 半導体薄膜素子の製造方法
JPH06107489A (ja) * 1992-09-28 1994-04-19 Rohm Co Ltd 結晶性薄膜製造方法
JPH06107491A (ja) * 1992-09-28 1994-04-19 Rohm Co Ltd 結晶性薄膜製造方法
JP2001135876A (ja) * 1999-11-02 2001-05-18 Seiko Epson Corp 圧電体薄膜あるいは強誘電体薄膜の製造方法
JP2004281900A (ja) * 2003-03-18 2004-10-07 Seiko Epson Corp セラミックス膜の製造方法およびこれに用いる加圧型熱処理装置
WO2006087777A1 (fr) * 2005-02-16 2006-08-24 Youtec Co., Ltd. Dispositif de recuit de lampe de pressurisation, procédé de recuit de lampe de pressurisation, film mince et composante électronique
JP2009094526A (ja) * 2008-11-13 2009-04-30 Seiko Epson Corp 強誘電体膜形成用ゾルゲル溶液、強誘電体膜形成用ゾルゲル溶液の製造方法、強誘電体膜、強誘電体メモリ、圧電素子および焦電素子
JP2010228956A (ja) * 2009-03-26 2010-10-14 Kanagawa Acad Of Sci & Technol 薄膜形成方法及びデバイスの製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
S.H.HU ET AL.: "Preparation and optical waveguide property of metal alkoxide solution- derived Pb (Zr0,5Ti0.5) O3 thick films", APPLIED PHYSICS LETTERS, vol. 84, no. 18, 2004, pages 3609 - 3611 *
ZHI-XIANG ZHU ET AL.: "Phase structure of epitaxial Pb(Zr,Ti)03 thin films on Nb-doped SrTi03 substrates", APPLIED PHYSICS LETTERS, vol. 91, 2007, pages 222910 - 1-3 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104193333A (zh) * 2014-08-18 2014-12-10 曹静 一种(Bi0.46Na0.46Ba0.06La0.02)ZrxTi(1-x)O3反铁电陶瓷的制备方法
WO2016121204A1 (fr) * 2015-01-26 2016-08-04 株式会社ユーテック Dispositif de recuit à lampe de type sous pression, film ferroélectrique et son procédé de production
JPWO2016121204A1 (ja) * 2015-01-26 2017-12-21 株式会社ユーテック 加圧式ランプアニール装置、強誘電体膜及びその製造方法
CN113539812A (zh) * 2021-07-14 2021-10-22 湘潭大学 一种同质种子层调控氧化铪基铁电薄膜电学性能的方法
CN113539812B (zh) * 2021-07-14 2024-04-26 湘潭大学 一种同质种子层调控氧化铪基铁电薄膜电学性能的方法

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