WO2013147124A1 - ヒートシンク付パワーモジュール用基板、冷却器付パワーモジュール用基板及びパワーモジュール - Google Patents

ヒートシンク付パワーモジュール用基板、冷却器付パワーモジュール用基板及びパワーモジュール Download PDF

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Publication number
WO2013147124A1
WO2013147124A1 PCT/JP2013/059469 JP2013059469W WO2013147124A1 WO 2013147124 A1 WO2013147124 A1 WO 2013147124A1 JP 2013059469 W JP2013059469 W JP 2013059469W WO 2013147124 A1 WO2013147124 A1 WO 2013147124A1
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Prior art keywords
heat sink
power module
layer
substrate
metal layer
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PCT/JP2013/059469
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English (en)
French (fr)
Japanese (ja)
Inventor
長友　義幸
黒光　祥郎
Original Assignee
三菱マテリアル株式会社
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Publication date
Application filed by 三菱マテリアル株式会社 filed Critical 三菱マテリアル株式会社
Priority to CN201380016914.0A priority Critical patent/CN104205325A/zh
Priority to EP13770305.4A priority patent/EP2833401B1/en
Priority to US14/388,701 priority patent/US20150055302A1/en
Priority to KR1020147026972A priority patent/KR102027615B1/ko
Priority to IN8075DEN2014 priority patent/IN2014DN08075A/en
Publication of WO2013147124A1 publication Critical patent/WO2013147124A1/ja

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0207—Cooling of mounted components using internal conductor planes parallel to the surface for thermal conduction, e.g. power planes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0209—External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00—Coating on the layer surface
    • B32B2255/06—Coating on the layer surface on metal layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00—Coating on the layer surface
    • B32B2255/20—Inorganic coating
    • B32B2255/205—Metallic coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/30—Properties of the layers or laminate having particular thermal properties
    • B32B2307/302—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/51—Elastic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/54—Yield strength; Tensile strength
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/121—Metallic interlayers based on aluminium
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    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/128—The active component for bonding being silicon
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
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    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
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    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/06—Thermal details
    • H05K2201/066—Heatsink mounted on the surface of the printed circuit board [PCB]

Definitions

  • the present invention relates to a power module substrate in which a circuit layer is disposed on one surface of a ceramic substrate and a metal layer composed of aluminum is disposed on the other surface of the ceramic substrate, and a heat sink composed of copper or a copper alloy And a power module substrate with a heat sink including the power module substrate with a heat sink, and a power module.
  • a power element for supplying power has a relatively high calorific value, and as a substrate on which the power element is mounted, for example, as shown in Patent Documents 1 to 4, a circuit layer is formed on one surface of a ceramic substrate.
  • a power module substrate in which an aluminum metal plate serving as a metal layer is bonded and an aluminum metal plate serving as a metal layer is bonded to the other surface of the ceramic substrate is widely used.
  • a copper heat sink (heat sink) is bonded to the other surface side of the metal layer via a solder layer.
  • the heat radiating plate is fixed to the cooler with screws or the like.
  • a thermal cycle is loaded during use.
  • distortion may accumulate in the solder layer interposed between the metal layer and the heat sink (heat sink), which may cause cracks in the solder layer. is there. Therefore, conventionally, by forming the metal layer with aluminum having a relatively small deformation resistance such as 4N aluminum having an aluminum content of 99.99% by mass or more, the above-described distortion is absorbed by the deformation of the metal layer, It is intended to prevent the occurrence of cracks in the layer.
  • the strain is distributed throughout the metal layer. It is confirmed that it is widely dispersed and the peak value of the distortion amount is lowered.
  • the metal layer is formed of aluminum having a relatively small deformation resistance such as 4N aluminum, cracks occur in a wide range of the solder layer, and the bonding between the metal layer and the heat sink becomes insufficient.
  • the thermal resistance would increase after the heat cycle load. This is because when the thermal cycle is applied, the metal layer is deformed more than necessary, and further strain is applied to the solder layer interposed between the heat sink and the strain is distributed even though the strain is widely dispersed. It is presumed that the amount could not be reduced sufficiently.
  • power modules have become smaller and thinner, and the usage environment has become harsh, and the amount of heat generated from electronic components such as semiconductor elements has increased. And cracks tend to occur in a wide range of the solder layer.
  • solder layer interposed between the metal layer and the heat sink for example, Sn-Ag-based or Sn-Ag-Cu-based lead-free solder materials are used recently. These solder materials are precipitation hardening type solder materials that are hardened by the precipitation of Sn—Ag intermetallic compound dispersed in the Sn matrix.
  • the solder layer made of such a solder material has a problem in that the strength of the solder layer becomes thermally unstable because the particle size and dispersion state of the precipitates change depending on the thermal cycle.
  • the present invention has been made in view of the above-described circumstances, and can suppress the generation and progress of cracks in a solder layer interposed between a metal layer made of aluminum and a heat sink made of copper, thereby improving bonding reliability.
  • the present inventors use an aluminum plate having an aluminum purity of 99.0% by mass or more and 99.85% by mass or less (so-called 2N aluminum) in the metal layer.
  • 2N aluminum aluminum
  • the deformation of the metal layer can be suppressed as compared with the case of using an aluminum plate of 4N aluminum.
  • the strain amount is high in the peripheral portion of the metal layer, and the strain in the inner region of the metal layer is The knowledge that the amount becomes low was obtained.
  • the substrate for a power module with a heat sink includes a ceramic substrate, a circuit layer disposed on one surface of the ceramic substrate, and the ceramics.
  • a power module substrate provided with a metal layer made of aluminum disposed on the other surface of the substrate; a heat sink made of copper or a copper alloy joined to the other surface side of the metal layer via a solder layer;
  • the metal layer is formed by bonding an aluminum plate having an Al content of 99.0% by mass or more and 99.85% by mass or less to the ceramic substrate.
  • the solder layer is made of a solid solution hardening type solder material containing Sn as a main component and a solid solution element dissolved in the parent phase of Sn. It has been made.
  • the metal layer is formed by bonding an aluminum plate having an Al content of 99.0% by mass to 99.85% by mass to the ceramic substrate. Therefore, the metal layer is not easily deformed after being subjected to a thermal cycle, and the occurrence of cracks in the solder layer can be suppressed.
  • the Al content is less than 99.0% by mass, the plastic deformation of Al is insufficient and a sufficient stress buffering effect cannot be obtained. Thereby, the joining rate after a thermal cycle will fall for the reason a crack generate
  • the Al content is in the range of 99.0% by mass to 99.85% by mass.
  • the solder layer is formed of a solid solution hardening type solder material containing Sn as a main component and a solid solution element that dissolves in the Sn matrix, the mother of the solder layer. The strength of the phase is increased. Further, the strength is ensured even when the cooling cycle is loaded.
  • the crack can be prevented from progressing to the inner region of the metal layer.
  • content of Al is 99.0 mass% or more and 99.85 mass% or less, and Fe, Cu, Si is mentioned as a main impurity.
  • the solder layer is preferably formed of a solder material containing Sb as the solid solution element.
  • Sb is solid-solved in the Sn matrix, whereby the strength of the solder layer is reliably improved and thermally stabilized. Therefore, the progress of cracks generated at the peripheral edge of the metal layer can be reliably suppressed.
  • an element that generates precipitates may be included. That is, even if the particle size and dispersion state of the precipitates are changed by the cooling and heating cycle, the strength of the Sn matrix can be secured by solid solution hardening of Sb, and the progress of cracks can be suppressed.
  • the heat sink is preferably made of copper or a copper alloy having a tensile strength of 250 MPa or more.
  • the heat sink is deformed in the elastic deformation region. Therefore, it is possible to suppress plastic deformation so that the heat sink is warped, and the heat sink can be placed in close contact with the cooler.
  • a heat sink a plate-like heat sink, a cooler in which a refrigerant circulates inside, a liquid-cooled or air-cooled heat sink with fins, a heat pipe, or other metal intended to lower the temperature by heat dissipation Parts are included.
  • a power module substrate with a cooler includes the above-described power module substrate with a heat sink and a cooler that is stacked on the other surface side of the heat sink.
  • the heat sink made of copper having excellent thermal conductivity is provided, heat from the power module substrate can be efficiently spread and dissipated.
  • production and a crack of a crack are suppressed in the solder layer interposed between a metal layer and a cooler, the heat
  • a power module according to the present invention includes the above-described power module substrate with a heat sink and electronic components mounted on the power module substrate with a heat sink. According to the power module having this configuration, the occurrence and progress of cracks in the solder layer formed between the metal layer and the cooler can be suppressed, so that the reliability can be drastically improved.
  • the power module 1 includes a power module substrate 20 with a heat sink, a semiconductor chip 3, and a cooler 40.
  • the power module substrate 20 with a heat sink is bonded to the power module substrate 10 on which the circuit layer 12 and the metal layer 13 are disposed, and the other surface (the lower surface in FIG. 1) via the solder layer 17.
  • a heat sink 18 is bonded to one surface (the upper surface in FIG. 1) of the circuit layer 12 via the chip solder layer 2.
  • the cooler 40 is disposed on the other surface side of the heat radiating plate 18.
  • the heat sink 18 is used as a heat sink.
  • the chip solder layer 2 is made of, for example, a Sn—Ag, Sn—In, or Sn—Ag—Cu solder material.
  • a Ni plating layer (not shown) is provided between the circuit layer 12 and the chip solder layer 2.
  • the power module substrate 10 includes a ceramic substrate 11 constituting an insulating layer, and a circuit layer 12 disposed on one surface (the upper surface in FIG. 2) of the ceramic substrate 11. And a metal layer 13 disposed on the other surface (lower surface in FIG. 2) of the ceramic substrate 11. That is, the ceramic substrate 11 has a first surface (one surface) and a second surface (the other surface), and a circuit layer is disposed on the first surface of the ceramic substrate 11. A metal layer is disposed on the second surface.
  • the ceramic substrate 11 prevents electrical connection between the circuit layer 12 and the metal layer 13, and is made of highly insulating AlN (aluminum nitride). Further, the thickness of the ceramic substrate 11 is set within a range of 0.2 to 1.5 mm, and in this embodiment is set to 0.635 mm. In the present embodiment, as shown in FIGS. 1 and 2, the width of the ceramic substrate 11 is set wider than the width of the circuit layer 12 and the metal layer 13.
  • the circuit layer 12 is formed by bonding a conductive metal plate 22 to the first surface (the upper surface in FIG. 3) of the ceramic substrate 11.
  • the circuit layer 12 is formed by bonding a metal plate 22 made of a rolled plate of aluminum (so-called 4N aluminum) having an aluminum content of 99.99 mass% or more to the ceramic substrate 11. Yes.
  • the metal plate 22 and the ceramic substrate 11 are bonded via an Al—Si brazing material. Therefore, an interface vicinity layer 12A in which Si is diffused is formed in the circuit layer 12 in the vicinity of the interface with the ceramic substrate 11.
  • the aluminum content may be less than 99.99% by mass.
  • the metal layer 13 is formed by bonding a metal plate 23 to the second surface (the lower surface in FIG. 3) of the ceramic substrate 11.
  • the metal layer 13 is formed by bonding a metal plate 23 made of a rolled plate of aluminum (so-called 2N aluminum) having an aluminum content of 99.0 mass% to 99.85 mass% to the ceramic substrate 11. It is formed by.
  • the metal plate 23 and the ceramic substrate 11 are joined via an Al—Si brazing material. Therefore, an interface vicinity layer 13A in which Si is diffused is formed in the vicinity of the interface with the ceramic substrate 11 in the metal layer 13.
  • the aluminum content may be less than 99.0% by mass.
  • the heat radiating plate 18 spreads heat from the power module substrate 10 in the surface direction and is made of copper or a copper alloy having excellent thermal conductivity.
  • the heat sink 18 is made of copper or a copper alloy having a Young's modulus of 130 GPa or less and a tensile strength of 250 MPa or more.
  • the heat sink 18 is composed of Cu-0.04 mass% Ni-0.17 mass% Co-0.05 mass% P-0.1 mass% Sn (CDA No. C18620), The rate is 125 GPa and the tensile strength is 250 MPa or more.
  • the cooler 40 includes a flow path 41 for circulating a cooling medium (for example, cooling water).
  • the cooler 40 is preferably made of a material having good thermal conductivity, and is made of A6063 (aluminum alloy) in the present embodiment.
  • the heat sink 18 and the cooler 40 are fastened by a fixing screw 45 as shown in FIG.
  • the solder layer 17 interposed between the metal layer 13 and the heat radiating plate 18 is a solid solution hardening type containing Sn as a main component and a solid solution element dissolved in the parent phase of Sn.
  • the solder material is formed.
  • the solder material is made of a Sn—Sb alloy containing Sb as a solid solution element in the range of 2% by mass to 10% by mass, specifically, Sn-5% by mass Sb solder material and Has been.
  • a Ni plating layer (not shown) is provided between the metal layer 13 and the solder layer 17.
  • a metal plate 22 (4N aluminum rolled plate) to be the circuit layer 12 has a thickness of 5 to 50 ⁇ m (14 ⁇ m in this embodiment). They are laminated via the brazing material foil 24. Further, a metal plate 23 (2N aluminum rolled plate) to be the metal layer 13 is laminated on the second surface side of the ceramic substrate 11 via a brazing filler metal foil 25 having a thickness of 5 to 50 ⁇ m (14 ⁇ m in this embodiment). Is done.
  • the brazing material foils 24 and 25 are Al—Si based brazing materials containing Si which is a melting point lowering element.
  • the metal plate 22, the brazing material foil 24, the ceramic substrate 11, the brazing material foil 25, and the metal plate 23 laminated as described above are pressed (pressure 1 to 5 kgf / cm 2 ) in the laminating direction. Charge in the furnace and heat. Then, the brazing material foils 24 and 25 and a part of the metal plates 22 and 23 are melted, and molten metal regions are formed at the interfaces between the metal plates 22 and 23 and the ceramic substrate 11, respectively.
  • the heating temperature is 550 ° C. or more and 650 ° C. or less, and the heating time is 30 minutes or more and 180 minutes or less.
  • region formed in the interface of the metal plates 22 and 23 and the ceramic substrate 11 is solidified, and the ceramic substrate 11 and the metal plate 22 and the metal plate 23 are joined.
  • the melting point lowering element (Si) contained in the brazing material foils 24 and 25 diffuses into the metal plates 22 and 23.
  • the metal plates 22 and 23 to be the circuit layer 12 and the metal layer 13 and the ceramic substrate 11 are joined, and the power module substrate 10 according to the present embodiment is manufactured.
  • the interface vicinity layer 13 ⁇ / b> A is formed by diffusion of Si contained in the brazing material foil 25.
  • the interface vicinity layer 12 ⁇ / b> A is formed by the diffusion of Si contained in the brazing material foil 24.
  • the heat radiating plate 18 is soldered using a Sn-5 mass% Sb solder material.
  • the solder layer 17 is formed between the metal layer 13 and the heat sink 18, and the board 20 for power modules with a heat sink which is this embodiment is manufactured.
  • the heat sink 18 of the power module substrate 20 with heat sink is fastened to the cooler 40 by the fixing screws 45.
  • substrate for power modules with a cooler which is this embodiment is produced.
  • the semiconductor chip 3 is mounted on one surface of the circuit layer 12 via the chip solder layer 2. Thereby, the power module 1 which is this embodiment is produced.
  • the metal layer 13 has an Al content of 99.0% by mass or more and 99.85% by mass or less. Since the formed metal plate 23 made of 2N aluminum is joined to the ceramic substrate 11, the metal layer 13 is not easily deformed after a thermal cycle load, and the occurrence of cracks in the solder layer 17 can be suppressed.
  • the solder layer 17 is formed of a solid solution hardening type solder material containing Sn as a main component and a solid solution element dissolved in the Sn matrix, and in the present embodiment, It is a solder material made of Sn—Sb alloy containing Sb in a range of 2% by mass or more and 10% by mass or less as a solid solution element. Specifically, it is formed of Sn-5% by mass Sb solder material. The strength of the parent phase of the solder layer 17 is ensured even when the strength of the parent phase of the solder layer 17 is increased and a cooling cycle is applied.
  • the content is preferably in the range of 2% by mass or more and 10% by mass or less.
  • the heat sink 18 is made of copper or a copper alloy having a Young's modulus of 130 MPa or less and a tensile strength of 250 MPa or more, the heat sink 18 is easily elastically deformed and hardly plastically deformed. That is, the elastic deformation region of the heat sink 18 is widened. Therefore, distortion generated in the solder layer 17 can be reduced by elastic deformation of the heat radiating plate 18, and cracks generated in the peripheral portion of the metal layer 13 can be prevented from extending to the inner region of the metal layer 13.
  • the cooler 40 and the heat radiating plate 18 can be brought into close contact with each other, and the heat of the semiconductor chip 3 is efficiently directed toward the cooler 40. Can be dissipated.
  • this invention is not limited to this, It can change suitably in the range which does not deviate from the technical idea of the invention.
  • the embodiment of the present invention has been described using a heat sink as a heat sink, but when directly bonding to a cooler having the configuration shown in FIG. 1, or a liquid-cooled, air-cooled heat sink in which fins are formed as a heat sink, A heat pipe or the like may be used.
  • a metal plate serving as a circuit layer, a metal plate serving as a metal layer, and a ceramic substrate using brazing material foil may be bonded to each other by liquid phase diffusion bonding.
  • the heat sink has been described as being composed of copper or a copper alloy having a Young's modulus of 130 MPa or less and a tensile strength of 250 MPa or more, but is not limited thereto, and is composed of another copper or copper alloy. It may be a heat sink.
  • the circuit layer is formed of aluminum, the present invention is not limited to this, and the circuit layer may be formed of copper or a copper alloy.
  • the size of the circuit layer and the metal layer was 37 mm ⁇ 37 mm, and the size of the ceramic substrate was 40 mm ⁇ 40 mm.
  • a heat sink is used as a heat sink, and the size of the heat sink is 70 mm ⁇ 70 mm ⁇ 3 mm.
  • the thickness of the solder layer between the heat sink and the metal layer was 0.4 mm.
  • the joining rate between the metal layer and the heat radiating plate was determined using the following equation using an ultrasonic flaw detector.
  • the initial bonding area is an area to be bonded before bonding, that is, a metal layer area.
  • peeling is indicated by a white portion in the joint, and thus the area of the white portion was taken as the peeling area.
  • (Bonding rate) ⁇ (initial bonding area) ⁇ (peeling area) ⁇ / (initial bonding area)
  • the joining rate was measured before and after the cooling cycle loading.
  • the thermal cycle uses TSB-51, a thermal shock tester, Espec Corp., in a liquid phase (Fluorinert) for 5 minutes at -40 ° C and 125 ° C with respect to the test piece (power module with heat sink). A cycle of 5 minutes was repeated for 2000 cycles.
  • Comparative Examples 1 and 2 using a solder material other than the solid solution hardening type it is confirmed that the joining rate is lowered after the thermal cycle load. It is presumed that the strength of the parent phase of the solder layer was lowered after the cooling cycle and the cracks generated at the peripheral edge of the metal layer propagated to the inner region of the metal layer. Moreover, also in Comparative Examples 3 and 4 in which the metal layer is formed of 4N aluminum, it is confirmed that the bonding rate is lowered after the thermal cycle load. It is presumed that cracks occurred in a wide range of the solder layer. On the other hand, in Examples 1 to 7 of the present invention, the bonding rate did not decrease even after the cooling / heating cycle load.
  • Power module 3 Semiconductor chip (electronic component) 10 Power Module Substrate 11 Ceramic Substrate 13 Metal Layer 17 Solder Layer 18 Heat Sink (Heat Sink)

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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PCT/JP2013/059469 2012-03-30 2013-03-29 ヒートシンク付パワーモジュール用基板、冷却器付パワーモジュール用基板及びパワーモジュール WO2013147124A1 (ja)

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CN201380016914.0A CN104205325A (zh) 2012-03-30 2013-03-29 自带散热器的功率模块用基板、自带冷却器的功率模块用基板以及功率模块
EP13770305.4A EP2833401B1 (en) 2012-03-30 2013-03-29 Power module substrate with heat sink, power module substrate with cooler, and power module
US14/388,701 US20150055302A1 (en) 2012-03-30 2013-03-29 Power module substrate with heatsink, power module substrate with cooler and power module
KR1020147026972A KR102027615B1 (ko) 2012-03-30 2013-03-29 히트 싱크 장착 파워 모듈용 기판, 냉각기 장착 파워 모듈용 기판 및 파워 모듈
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KR102027615B1 (ko) 2019-10-01
IN2014DN08075A (en:Method) 2015-05-01
US20150055302A1 (en) 2015-02-26
TW201411789A (zh) 2014-03-16
EP2833401A1 (en) 2015-02-04
KR20140142256A (ko) 2014-12-11
TWI620289B (zh) 2018-04-01
EP2833401B1 (en) 2022-08-03
EP2833401A4 (en) 2015-12-23
JP2013214561A (ja) 2013-10-17
CN104205325A (zh) 2014-12-10

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