WO2013146182A1 - 真空成膜装置および真空成膜方法 - Google Patents
真空成膜装置および真空成膜方法 Download PDFInfo
- Publication number
- WO2013146182A1 WO2013146182A1 PCT/JP2013/056436 JP2013056436W WO2013146182A1 WO 2013146182 A1 WO2013146182 A1 WO 2013146182A1 JP 2013056436 W JP2013056436 W JP 2013056436W WO 2013146182 A1 WO2013146182 A1 WO 2013146182A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- deposition
- preventing plate
- vacuum
- plate
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3328—Problems associated with coating adhesion, stress, lift-off of deposited films
Definitions
- the present invention relates to a vacuum film forming apparatus and a vacuum film forming method.
- Vacuum deposition methods such as vapor deposition, sputtering, and CVD are techniques for forming a thin film on a substrate by depositing and depositing particles of the deposition material on the substrate in a vacuum chamber.
- the film deposition material particles adhere to other places, such as the inner wall of the vacuum chamber and the substrate transport device, and the film attached to places other than the substrate peels off, affecting the substrate.
- a deposition plate is generally provided in a place where particles of a film forming material other than the substrate are not desired to adhere.
- the method of covering the target area with aluminum foil or copper foil and discarding the foil after the completion of one batch of film formation is used as a method for easily obtaining an anti-adhesion effect, but this method increases the amount of waste, In addition, a large load is generated in terms of running cost.
- a method of reducing the amount of waste by using a metal plate as an anti-adhesion plate as an alternative to the foil and peeling the film of the film-forming substance attached to the anti-adhesion plate and reusing the anti-adhesion plate is also used.
- the film adhering to the adhesion preventing plate peels off during film formation, and dust is generated, which causes a product defect by adhering to the base material or adversely affecting the film formation.
- Patent Document 1 discloses a form of an adhesion preventing plate used in an ITO sputtering apparatus.
- the surface of the adhesion preventing plate is roughened to increase the contact area.
- the adhesion preventing plate can be reused by removing the adhered ITO film by etching or blasting.
- Patent Document 2 shows a form of a deposition plate used in a thin film manufacturing apparatus. This is a technique for ensuring adhesion by providing grooves on the surface of the deposition preventive plate and further applying a sprayed coating on the surface layer. The deposition plate can be reused by peeling off the film adhered to the deposition plate together with the spray coating and applying the spray coating again.
- Patent Document 3 discloses a form of a metal film peeling prevention structure in a metal film forming apparatus.
- a sprayed film made of aluminum or an aluminum alloy is formed on the surface of the member so that the attached metal film does not peel off from a predetermined member on which the metal film is deposited and deposited, and the surface is appropriately roughened. It has the characteristic of being.
- the surface area is increased by roughening to improve the adhesion, and the thermal sprayed film has a stress relaxation effect on the deposited film to prevent peeling.
- Patent Document 4 shows a form of a protective plate for the purpose of eliminating these drawbacks.
- This is a technique for directly adjusting the temperature of the deposition plate itself. Thereby, the temperature difference between the film-forming particles and the deposition preventing plate is optimized to form a film with a film stress as small as possible, thereby preventing peeling due to the film stress. According to the knowledge of the present inventors, this method can prevent the adhesion film from peeling off very effectively, but has the following problems.
- the vacuum deposition system has few structures. This is because it is affected by outgas from the member.
- an extra heater or cooler must be provided in the vacuum chamber.
- there is a risk of extra exhaust time due to outgas, or the degree of vacuum may change during temperature adjustment, and the heating medium or power source of the heater or cooler may be changed to the atmosphere side. Since it must be introduced into the vacuum chamber, there is a risk that it is not desirable for the vacuum apparatus, such as a risk of vacuum leakage at the introduction portion.
- the object of the present invention is to solve the above-mentioned problems, and can be reused, and it is possible to achieve both an anti-film formation function on a member to be protected and an anti-peeling function of the film attached to the anti-adhesion plate.
- An object of the present invention is to provide a high-quality and stable vacuum film forming apparatus and vacuum film forming method by providing a plate.
- the present invention provides a vacuum film forming apparatus for forming a film of a film forming material on a substrate, which is disposed so as to cover at least a part of a protection target member, and
- the deposition preventing material for preventing adhesion of the particles of the film-forming substance to the target member has an area of a contact surface between the other structure including the protection target member and the deposition preventing film.
- the first heat insulating member is disposed between the surface excluding the contact surface and the other structure including the protection target member, and is smaller than the area of the film deposition surface on which the particles are adhered.
- a vacuum film forming apparatus wherein the protection target member is a member cooled by a cooling means.
- the contact surface between another structure including the member to be protected and the deposition preventing plate is provided only on a side far from the film forming source of the film forming material.
- a vacuum film forming apparatus is provided.
- the contact between the other structure including the member to be protected and the deposition preventing plate is performed at an end portion of the deposition preventing plate.
- a vacuum film forming apparatus is provided.
- a vacuum film forming apparatus characterized in that a sprayed film formed by a spraying method is formed on the coating surface of the deposition preventing plate.
- the vacuum forming device is characterized in that the second heat insulating member is sandwiched and attached to a contact surface where the member to which the adhesion preventing plate is attached and the adhesion preventing plate are in contact with each other.
- a membrane device is provided.
- a vacuum film forming method characterized by using any one of the above vacuum film forming apparatuses.
- the “member to be protected” refers to a member that is in a position where it is directly exposed from the film forming source and needs to be protected from adhesion of particles of the film forming material.
- a constituent member of a film forming source an inner wall of a vacuum chamber, and a partition wall.
- the “heat insulating member” refers to an object having a structure in which heat is not easily transmitted or a substance having a low thermal conductivity.
- the former corresponds to glass wool or polyurethane foam, and the latter corresponds to silicon rubber or air.
- a vacuum is also handled as a heat insulating member in the present invention.
- a vacuum film forming apparatus having a simple structure of an adhesion-preventing plate that is extremely difficult to peel and drop off the adhered film can be obtained. For this reason, when the film is formed using the vacuum film forming apparatus according to the present invention, the formation of a high quality film is not affected by the occurrence of defects due to entrainment of dust or the deterioration of film quality due to abnormal discharge starting from dust. A membrane is possible.
- a roll-to-roll vacuum film forming apparatus is configured using a target pressing member of a magnetron sputtering electrode as a member to be protected.
- the present invention relates to the structure of the deposition plate of the vacuum deposition apparatus, the structure of the magnetron sputter electrode not directly related to the configuration of the deposition plate, the configuration of the member to be protected, and the film forming means, etc.
- the present invention is not limited to the following contents, and in order to explain the structure of the deposition preventing plate according to the present invention in an easy-to-understand manner, the structure around the deposition preventing plate according to the present invention, for example, the structure of the sputter electrode is described in detail. It is only explained.
- FIG. 2 is a schematic sectional view of the vacuum film forming apparatus.
- an unwinder 203, a main roller 204, a winder 205, a base material transport system composed of various guide roller groups not assigned part numbers, and a film forming source in this figure, a sputter electrode is used as an example
- the vacuum chamber 201 is evacuated, and then the base material 206 is deposited on the base material 206 by a sputtering method while being transported by the base material transport system.
- the inside of the vacuum chamber 201 is divided into a film forming chamber for forming a film and a winding chamber in which a base material transport system is accommodated, and a partition wall 202 is provided to perform separate pressure management from different viewpoints. It is common.
- a partition wall 202 is provided to perform separate pressure management from different viewpoints. It is common.
- various webs including a plastic film are used.
- a vacuum film forming apparatus that is not a roll-to-roll system, for example, a single wafer processing type vacuum film forming apparatus, a silicon wafer, a glass plate, or the like may be used as a base material.
- FIG. 1 is a schematic cross-sectional view when a vacuum film forming apparatus according to the present invention is configured using a target pressing member of a magnetron sputtering electrode generally used as a film forming source for a vacuum film forming apparatus as a protection target member.
- a sputtering target 104 is mounted on the sputtering electrode 105, and is fixed by a target presser that is a protection target member 102.
- a magnet for forming a magnetic field is provided in the vicinity of the protection target member 102, and a refrigerant path 103 is provided inside the protection target member 102 so as not to demagnetize due to heat transfer from the heated protection target member 102. Then, cooling is performed using some cooling means such as flowing water or oil as a refrigerant.
- This electrode is placed in a vacuum chamber and a voltage is applied between the sputtering electrode 105 and an anode that is electrically insulated from the sputtering electrode 105 to cause plasma discharge in the discharge space 106, thereby generating a sputtering target.
- 104 is sputtered, the target material is knocked out as particles of the film forming substance, and is deposited and deposited on the substrate to form a film. Any material can be used as long as the anode is electrically insulated from the sputtering electrode 105 and functions as an electrical counter electrode of the sputtering electrode 105 (cathode).
- the main roller 204, the vacuum chamber wall surface 207, the vacuum chamber bottom surface 208, and the vacuum chamber top surface. 209 and the like can be anodes if insulated from the sputtering electrode 105.
- the film-forming substance refers to a substance that exerts a desired function by forming a thin film on a substrate.
- copper is used as a film-forming substance, or for a packaging material.
- aluminum is used as a film-forming material, or it is appropriately selected in consideration of functions, costs, and the like.
- the sputtering target 104 is a film forming source, and the particles of the film forming material struck out from the film forming source are scattered in all directions, so that there are components attached to the protection target member 102.
- the film-forming substance particles adhere to and accumulate on the protection target member 102 to form a film, depending on the physical properties, the electrical, thermal, magnetic, and physical characteristics of the protection target member 102 are changed, and the discharge conditions are not satisfied. It can be a factor to stabilize. Further, the adhesion film peels off itself to become dust, or arc discharge is induced to generate dust, which increases the risk of adversely affecting the quality of the film formation on the substrate.
- an adhesion preventing plate 101 is provided so as to cover the surface of the protection target member 102 to which particles of the film-forming substance adhere, and the adhesion prevention plate 101 and the protection target member 102 are brought into contact with each other only at the contact surface.
- a first heat insulating member is provided between the adhesion prevention plate 101 and the protection target member 102.
- the deposition preventing plate 101 is heated by ion or atomic collision energy during film formation.
- the contact surface is limited to a small size, and the other portions are made of a heat insulating structure, so that the deposition plate is heated to a temperature at which the amount of heat released from the contact surface and the amount of heat received by the deposition plate 101 are balanced. It is possible to increase the temperature of 101 itself without adjusting the temperature from the outside.
- the heat source for heating the deposition plate 101 is derived from the deposition energy, the deposition plate temperature is close to a temperature suitable for deposition with the deposition component kept at a low film stress.
- the temperature is adjusted without any special adjustment at a high temperature at a high film formation rate and at a low temperature at a low film formation rate.
- This tendency tends to appear more prominently closer to the film forming source, and the present invention can be particularly suitably used as an adhesion preventing plate for covering the protection target member 102 adjacent to the film forming source.
- the technical idea of the present invention is not used, the amount of heat received by the deposition preventive plate 101 is immediately radiated from a wide contact surface, so the temperature of the deposition preventive plate 101 does not rise and the object of the present invention cannot be achieved. is there.
- the deposition preventing plate of the present invention has a simple structure and can be miniaturized, it is possible to minimize a decrease in film formation rate or to prevent a decrease in film formation rate.
- the protection target member 102 is arranged in a state where it is literally adjacent to and in contact with the sputtering target 104 that is the film formation source, but some object is placed between the film formation source and the protection target member.
- the protection plate 101 is preferably made by molding from a plate-like material.
- a material having low thermal conductivity such as zirconia-based ceramics is preferably used, but it is in a vacuum heat insulating state because it is placed in a vacuum environment during film formation only by leaving a gap. It is.
- the vacuum pressure at this time may be a pressure used in a normal vacuum film forming process, and is generally sufficient if it is 10 3 Pa or less.
- a contact surface is provided on the side far from the sputtering target 104 of the deposition preventive plate 101, a material having low thermal conductivity such as zirconia-based ceramics is provided as the first heat insulating member at the end on the near side, and the other parts A structure in which one heat insulating member is evacuated is also preferably used.
- the “far side” means a place where the distance from the center point of the sputtering target 104 is longer than the distance from the center point of the deposition prevention plate 101, and the “near side” conversely of the deposition prevention plate 101. A place that is shorter than the distance to the center point.
- the distance between the protection plate 101 and the member 102 to be protected is the processing accuracy of the deposition plate, the clearance with other members, and the rate at which the deposition plate reduces the sputtering efficiency. Is appropriately determined from the viewpoint of optimizing the thickness, but is preferably in the range of about 0.3 mm to 10 mm.
- the first heat insulating member is vacuum, approximately 0.3 mm to 5 mm is generally used, and when it is a solid heat insulating member, approximately 1 mm to 10 mm is preferably used.
- the film deposition material particles adhere and deposit while the temperature of the deposition preventing plate 101 is low the film grows in a state in which a large film stress remains due to rapid cooling, so that the adhered film peels off very much. It is not good because it becomes easy. Since the deposition preventing plate 101 receives sputtering heat or plasma heat, the film stress of the adhesion film is suppressed low by keeping the temperature of the deposition preventing plate 101 as high as possible so as not to let the heat escape. For this purpose, it is effective to reduce the contact area between the deposition preventing plate 101 and other structures including the protection target member 102, and it is installed so as to contact other members at the end of the deposition preventing plate 101. Is preferred.
- the area of the contact surface between the deposition preventing plate 101 and another structure including the protection target member 102 is preferably smaller than the area of the deposition surface on which the particles of the deposition material of the deposition preventing plate 101 are adhered. More preferably, it is set to / 2. Regarding the lower limit of the contact area, it is physically impossible that the contact area is zero. However, the smaller the contact area, the better the heat retaining effect of the deposition preventing plate itself, which is preferable.
- the second heat insulating member is sandwiched and attached to the contact surface where the deposition preventing plate 101 and the protection target member 102 are in contact with each other, since the heat insulating effect is further increased.
- a method in which a heat insulating member such as zirconia ceramics is sandwiched between the contact surface of the deposition preventing plate 101 and the protection target member 102 and bolt fastening is preferably used. In this case, the main heat transfer path is via the bolt. It becomes a route and heat transfer efficiency can be greatly reduced.
- the contact surface only on the far side of the deposition plate 104 from the film forming source 104 is effective in suppressing the temperature drop of the deposition plate 101 from the viewpoint of making it difficult for heat to move.
- the thickness of the adhesion-preventing plate is appropriately determined in consideration of parameters such as processing accuracy of the adhesion-preventing plate, thermal strain resistance, mechanical strength, and estimated film deposition amount, but it should be in the range of 1 mm to 3 mm. Economical and favorable. Further, the above range is preferable from the viewpoint that the deposition plate itself does not increase the area for shielding the film formation particles and does not affect the film formation rate.
- the material of the deposition preventing plate is preferably the same as the material of the film forming material from the viewpoint of preventing peeling, but may be appropriately selected from cleaning characteristics, thermal characteristics, mechanical characteristics, etc. during reuse. For example, when the attached film is removed by chemical cleaning and reused, a stainless steel material having high corrosion resistance is preferably used.
- the contact area increases and the adhesion of the adhered film increases.
- the synergistic effect with the above-described film stress relaxation effect is more preferable because the peeling prevention function is further strengthened.
- the thermal spray material at this time may be a metal material such as tungsten or a non-metal material such as ceramic.
- FIG. 2 is a schematic cross-sectional view of a vacuum film forming apparatus according to the present invention in which a deposition plate is provided on the vacuum chamber wall surface.
- the vacuum chamber 201 accommodates the unwinder 203, the main roller 204, the winder 205, and a base material conveyance system composed of various guide roller groups not assigned part numbers, and the magnetron sputtering electrode described in FIG.
- This is an apparatus for forming a film on a base material by sputtering using a magnetron sputtering electrode while transporting the base material 206 by the base material transport system after evacuating the interior of 201.
- the inside of the vacuum chamber 201 is divided into a film forming chamber for forming a film and a winding chamber in which a base material transport system is accommodated, and a partition wall 202 is provided to perform separate pressure management from different viewpoints. It is common.
- the particles of the film forming material from the film forming source are directly on the vacuum chamber wall surface 207 and part of the partition wall 202, and indirectly on the vacuum chamber bottom surface 208 and the vacuum chamber top surface 209, respectively.
- the deposition preventing plate 101 can be suitably used. This is particularly suitable when it is necessary to cool a part of the vacuum chamber wall surface 207 or the partition wall 202 exposed directly from the film forming source.
- Example 1 The results of film formation experiments using the above-described deposition preventing plate as a target pressing member for a sputtering electrode will be described.
- the sputtering electrode itself has the structure shown in FIG. 1, and the protection target member 102 is a member for pressing the sputtering target 104 against the sputtering electrode 105.
- the temperature of the protection target member 102 tends to increase due to plasma or ion attack.
- the cooling water passage 103 is provided inside the member and the cooling water is passed therethrough.
- the structure is cooled by In this case, the protection target member 102 is located in the immediate vicinity of the sputtering target, and when the spatter formed on the protection target member 102 is peeled off and becomes dust, an abnormal discharge is caused.
- the width of the deposition surface of the deposition preventive plate 101 is set to be 36 mm in total, which is 20 mm for the longer side and 16 mm for the shorter side, and the end portion 10 mm of the deposition protection plate 101 is attached so as to be in contact with the member 102 to be protected. Further, the portion other than the contact surface was designed such that the gap between the deposition preventing plate 101 and the protection target member 102 was 1.2 mm. That is, it is a form using vacuum heat insulation as the first heat insulation member. Since the deposition type is nickel, pure nickel was used as the material of the sputtering target 104. Considering that the nickel film adhering to the adhesion preventing plate 101 is removed by chemical cleaning and reused, austenitic stainless steel (SUS304) was used as the material of the adhesion preventing plate 101.
- SUS304 austenitic stainless steel
- argon gas is introduced at 500 sccm, the pressure in the vacuum chamber is adjusted to 0.5 Pa, sputtering is performed, and an output capable of forming a film with a film thickness of about 1 mm on a workpiece (not shown).
- Film formation experiments were performed at the same time. As a result, the sputtered film was formed on the deposition preventing plate 101 with a thickness of a little less than 1 mm, but no peeling occurred. At this time, the highest temperature reached by the deposition preventing plate was 300 ° C.
- Example 2 Although the structure is almost the same as in Example 1, a test similar to that in Example 1 was performed using a member to be protected 102 that was not provided with the cooling water path 103. The structure of the deposition preventing plate was exactly the same as in Example 1.
- Example 3 The structure is almost the same as in Example 1, but the end 20 mm of the deposition preventing plate 101 is installed so as to be fixed to the member 102 to be protected. Sputtering was performed using this sputtering electrode, and a film formation experiment was performed for a time sufficient to form a film with a thickness of about 0.4 mm on a workpiece (not shown).
- Example 2 Although the structure was almost the same as that of Example 1, a test similar to that of Example 1 was performed using a structure in which no gap was formed between the protection target member 102 and the deposition preventing plate 101.
- the film adhering to the deposition preventing plate 101 was peeled off during the film formation, and abnormal discharge occurred frequently.
- the maximum temperature reached by the deposition preventing plate 101 was 50 ° C.
- the present invention can be applied not only to the sputtering electrode but also to a deposition preventing plate of a vacuum film forming apparatus such as a vapor deposition apparatus or a CVD apparatus, but the application range is not limited thereto.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
以上説明した防着板を、スパッタリング電極のターゲット押さえ部材に用いて成膜実験を行った結果を説明する。
[実施例2]
実施例1とほぼ同様の構造であるが、保護対象部材102に冷却水経路103を設けなかったものを用いて、実施例1と同様のテストを実施した。なお、防着板の構造は実施例1とまったく同じものを用いた。
[実施例3]
実施例1とほぼ同様の構造であるが、防着板101の端部20mmを保護対象部材102に固定するように設置し、その他の構造は実施例1と同じものを用いた。このスパッタリング電極を用いてスパッタリングを行い、図示しないワークにのべ0.4mm程度の膜厚で成膜できるだけの時間、成膜実験を実施した。
[比較例1]
実施例1とほぼ同様の構造であるが、防着板101を設けない電極を用い、実施例1と同様のテストを実施した。
[比較例2]
実施例1とほぼ同様の構造であるが、保護対象部材102と防着板101とに隙間を生じないように構成したものを用い、実施例1と同様のテストを実施した。
102 保護対象部材
103 冷却水経路
104 スパッタリングターゲット
105 スパッタリング電極
106 放電空間
201 真空槽
202 隔壁
203 アンワインダー
204 メインローラ
205 ワインダー
206 基材
207 真空槽壁面
208 真空槽底面
209 真空槽天面
Claims (8)
- 基材上に成膜物質の膜を成膜する真空成膜装置であって、冷却手段により冷却された保護対象部材の少なくとも一部を覆うように配設され、前記保護対象部材への前記成膜物質の粒子の付着を防止する防着板が、前記保護対象部材を含む他の構造物と前記防着板との接触面の面積を前記防着板の成膜物質の粒子を付着させる着膜面の面積よりも小さくし、かつ、前記防着板の前記保護対象部材側で前記接触面を除く面と前記保護対象部材を含む他の構造物との間に第1の断熱部材を設けて配設されたことを特徴とする真空成膜装置。
- 前記保護対象部材が成膜源に隣接していることを特徴とする請求項1に記載の真空成膜装置。
- 前記第1の断熱部材の厚さが0.3mm以上10mm以下であることを特徴とする請求項1または2に記載の真空成膜装置。
- 前記保護対象部材を含む他の構造物と前記防着板との前記接触面が、前記成膜物質の成膜源から遠い側にのみ設けられていることを特徴とする請求項1~3のいずれかに記載の真空成膜装置。
- 前記保護対象部材を含む他の構造物と前記防着板との接触を、前記防着板の端部で行わせるものであることを特徴とする請求項1~4のいずれかに記載の真空成膜装置。
- 前記防着板の前記着膜面に溶射法により成膜された溶射膜が形成されていることを特徴とする請求項1~5のいずれかに記載の真空成膜装置。
- 前記防着板を取り付ける部材と前記防着板とが接触する接触面に第2の断熱部材を挟みこんで取り付けられることを特徴とする請求項1~6のいずれかに記載の真空成膜装置。
- 請求項1~7のいずれかに記載の真空成膜装置を用いて基材上に成膜物質の膜を成膜することを特徴とする真空成膜方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20147024113A KR20140138665A (ko) | 2012-03-29 | 2013-03-08 | 진공 성막 장치 및 진공 성막 방법 |
US14/388,569 US20150060263A1 (en) | 2012-03-29 | 2013-03-08 | Vacuum film deposition device and vacuum film deposition method |
EP13769688.6A EP2835444A1 (en) | 2012-03-29 | 2013-03-08 | Vacuum film deposition device and vacuum film deposition method |
CN201380016348.3A CN104204270A (zh) | 2012-03-29 | 2013-03-08 | 真空成膜装置及真空成膜方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-076494 | 2012-03-29 | ||
JP2012076494 | 2012-03-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013146182A1 true WO2013146182A1 (ja) | 2013-10-03 |
Family
ID=49259450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/056436 WO2013146182A1 (ja) | 2012-03-29 | 2013-03-08 | 真空成膜装置および真空成膜方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20150060263A1 (ja) |
EP (1) | EP2835444A1 (ja) |
JP (1) | JPWO2013146182A1 (ja) |
KR (1) | KR20140138665A (ja) |
CN (1) | CN104204270A (ja) |
TW (1) | TW201348483A (ja) |
WO (1) | WO2013146182A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106702351B (zh) * | 2015-11-17 | 2020-01-07 | 中微半导体设备(上海)股份有限公司 | 带遮挡板的限流环装置与化学气相沉积设备及其调节方法 |
CN105449126B (zh) * | 2015-12-22 | 2018-03-16 | 上海天马有机发光显示技术有限公司 | 一种蒸镀掩模板及其制作方法 |
JP7012157B2 (ja) * | 2018-06-20 | 2022-01-27 | 株式会社アルバック | 防着部材及び真空処理装置 |
CN113227445B (zh) * | 2018-12-27 | 2023-03-28 | 株式会社爱发科 | 真空处理装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06322528A (ja) | 1993-05-06 | 1994-11-22 | Hitachi Ltd | スパッタ方法およびスパッタ装置 |
JPH08333678A (ja) | 1995-06-05 | 1996-12-17 | Teijin Ltd | Ito膜スパッタリング装置 |
JP2000192223A (ja) * | 1998-12-25 | 2000-07-11 | Matsushita Electric Ind Co Ltd | マグネトロンスパッタリング方法とマグネトロンスパッタリング装置 |
JP2005060757A (ja) * | 2003-08-11 | 2005-03-10 | Ulvac Japan Ltd | 成膜装置、及び成膜方法 |
JP2006057172A (ja) | 2004-08-24 | 2006-03-02 | Neos Co Ltd | 薄膜製造装置及びその製造方法 |
JP2008291299A (ja) | 2007-05-23 | 2008-12-04 | Texas Instr Japan Ltd | メタル成膜装置におけるメタル膜剥離防止構造及び当該構造を用いる半導体装置の製造方法 |
JP2009215624A (ja) * | 2008-03-12 | 2009-09-24 | Seiko Epson Corp | 成膜方法及び電気光学装置の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4169031A (en) * | 1978-01-13 | 1979-09-25 | Polyohm, Inc. | Magnetron sputter cathode assembly |
EP0144838B1 (de) * | 1983-12-05 | 1989-10-11 | Leybold Aktiengesellschaft | Magnetronkatode zum Zerstäuben ferromagnetischer Targets |
US20020090464A1 (en) * | 2000-11-28 | 2002-07-11 | Mingwei Jiang | Sputter chamber shield |
CN100999813A (zh) * | 2007-01-17 | 2007-07-18 | 友达光电股份有限公司 | 真空蒸镀设备及其防附着结构 |
MY150439A (en) * | 2008-04-30 | 2014-01-30 | Ulvac Inc | Method for production of water-reactive a1 film, and structural member for film-forming chamber |
-
2013
- 2013-03-08 US US14/388,569 patent/US20150060263A1/en not_active Abandoned
- 2013-03-08 CN CN201380016348.3A patent/CN104204270A/zh active Pending
- 2013-03-08 EP EP13769688.6A patent/EP2835444A1/en not_active Withdrawn
- 2013-03-08 JP JP2013512684A patent/JPWO2013146182A1/ja active Pending
- 2013-03-08 WO PCT/JP2013/056436 patent/WO2013146182A1/ja active Application Filing
- 2013-03-08 KR KR20147024113A patent/KR20140138665A/ko not_active Application Discontinuation
- 2013-03-28 TW TW102111067A patent/TW201348483A/zh unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06322528A (ja) | 1993-05-06 | 1994-11-22 | Hitachi Ltd | スパッタ方法およびスパッタ装置 |
JPH08333678A (ja) | 1995-06-05 | 1996-12-17 | Teijin Ltd | Ito膜スパッタリング装置 |
JP2000192223A (ja) * | 1998-12-25 | 2000-07-11 | Matsushita Electric Ind Co Ltd | マグネトロンスパッタリング方法とマグネトロンスパッタリング装置 |
JP2005060757A (ja) * | 2003-08-11 | 2005-03-10 | Ulvac Japan Ltd | 成膜装置、及び成膜方法 |
JP2006057172A (ja) | 2004-08-24 | 2006-03-02 | Neos Co Ltd | 薄膜製造装置及びその製造方法 |
JP2008291299A (ja) | 2007-05-23 | 2008-12-04 | Texas Instr Japan Ltd | メタル成膜装置におけるメタル膜剥離防止構造及び当該構造を用いる半導体装置の製造方法 |
JP2009215624A (ja) * | 2008-03-12 | 2009-09-24 | Seiko Epson Corp | 成膜方法及び電気光学装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20140138665A (ko) | 2014-12-04 |
US20150060263A1 (en) | 2015-03-05 |
JPWO2013146182A1 (ja) | 2015-12-10 |
EP2835444A1 (en) | 2015-02-11 |
CN104204270A (zh) | 2014-12-10 |
TW201348483A (zh) | 2013-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI470101B (zh) | 濺鍍成膜裝置及防附著構件 | |
KR101067104B1 (ko) | 성막 장치, 전자 디바이스의 제조 방법 | |
JP5395255B2 (ja) | 電子デバイスの製造方法およびスパッタリング方法 | |
WO2013146182A1 (ja) | 真空成膜装置および真空成膜方法 | |
WO2016190007A1 (ja) | プラズマ原子層成長装置 | |
JP5880485B2 (ja) | 成膜装置およびこれを用いた金属化樹脂フィルムの製造方法 | |
TWI673790B (zh) | 電漿蝕刻裝置 | |
JP2007042818A (ja) | 成膜装置及び成膜方法 | |
JP5654939B2 (ja) | 成膜装置 | |
WO2009157228A1 (ja) | スパッタリング装置、スパッタリング方法及び発光素子の製造方法 | |
JP2010275574A (ja) | スパッタリング装置および半導体装置製造方法 | |
CN116904953A (zh) | 一种气相沉积设备 | |
JP2009174060A (ja) | 成膜装置の基板トレイ | |
JP2017066429A (ja) | スパッタリング装置および薄膜の製造方法 | |
JP4858492B2 (ja) | スパッタリング装置 | |
US6620298B1 (en) | Magnetron sputtering method and apparatus | |
JP2015141956A (ja) | プラズマ処理装置およびプラズマ処理方法 | |
JP2013147711A (ja) | 気相成長装置 | |
JP5978072B2 (ja) | 絶縁膜の形成方法 | |
JPH11100665A (ja) | スパッタリング装置 | |
JP2006283135A (ja) | 成膜装置及び成膜方法 | |
JP5632946B2 (ja) | 遮蔽部材 | |
TWI523964B (zh) | 連續式濺鍍設備 | |
JP5254277B2 (ja) | 真空成膜装置用部品の製造方法 | |
JP2003073801A (ja) | スパッタ装置およびその方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2013512684 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13769688 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2013769688 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 20147024113 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14388569 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |