CN105449126B - 一种蒸镀掩模板及其制作方法 - Google Patents
一种蒸镀掩模板及其制作方法 Download PDFInfo
- Publication number
- CN105449126B CN105449126B CN201510973338.XA CN201510973338A CN105449126B CN 105449126 B CN105449126 B CN 105449126B CN 201510973338 A CN201510973338 A CN 201510973338A CN 105449126 B CN105449126 B CN 105449126B
- Authority
- CN
- China
- Prior art keywords
- deposition mask
- vapor deposition
- aluminum oxide
- mask plate
- mask substrate
- Prior art date
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title claims description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 230000008021 deposition Effects 0.000 claims abstract description 53
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 43
- 230000008020 evaporation Effects 0.000 claims abstract description 38
- 238000001704 evaporation Methods 0.000 claims abstract description 38
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 35
- 239000011248 coating agent Substances 0.000 claims abstract description 34
- 238000000576 coating method Methods 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 29
- 239000000919 ceramic Substances 0.000 claims abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 7
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000001962 electrophoresis Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 239000011368 organic material Substances 0.000 abstract description 18
- 238000011109 contamination Methods 0.000 abstract description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 230000007062 hydrolysis Effects 0.000 description 7
- 238000006460 hydrolysis reaction Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 229960005363 aluminium oxide Drugs 0.000 description 4
- 238000000280 densification Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001739 rebound effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
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CN201510973338.XA CN105449126B (zh) | 2015-12-22 | 2015-12-22 | 一种蒸镀掩模板及其制作方法 |
Applications Claiming Priority (1)
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CN201510973338.XA CN105449126B (zh) | 2015-12-22 | 2015-12-22 | 一种蒸镀掩模板及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105449126A CN105449126A (zh) | 2016-03-30 |
CN105449126B true CN105449126B (zh) | 2018-03-16 |
Family
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Family Applications (1)
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CN201510973338.XA Active CN105449126B (zh) | 2015-12-22 | 2015-12-22 | 一种蒸镀掩模板及其制作方法 |
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CN (1) | CN105449126B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190008377A (ko) | 2016-05-24 | 2019-01-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 내플라즈마성 코팅을 갖는 섀도우 마스크 |
CN106702319A (zh) * | 2017-03-30 | 2017-05-24 | 京东方科技集团股份有限公司 | 一种蒸镀方法 |
CN108034913B (zh) * | 2017-12-13 | 2020-04-14 | 深圳浚漪科技有限公司 | 柔性oled封装用金属掩膜版的绝缘处理方法 |
CN108198956A (zh) * | 2017-12-28 | 2018-06-22 | 武汉华星光电半导体显示技术有限公司 | 蒸镀用掩模板 |
CN109182967B (zh) * | 2018-10-18 | 2020-08-11 | 京东方科技集团股份有限公司 | 掩模板及蒸镀装置、基板的制备方法 |
CN109913804B (zh) * | 2019-03-27 | 2021-01-26 | 京东方科技集团股份有限公司 | 掩膜版及其制造方法 |
CN111549310B (zh) * | 2020-04-13 | 2021-01-15 | 南京深光科技有限公司 | 一种陶瓷粉体、掩膜版及其制作方法 |
CN113073292B (zh) * | 2021-03-26 | 2023-01-31 | 昆山工研院新型平板显示技术中心有限公司 | 图案结构制作方法和掩膜结构 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4731261B2 (ja) * | 2005-09-22 | 2011-07-20 | アイシン高丘株式会社 | 電着塗装方法 |
US20150060263A1 (en) * | 2012-03-29 | 2015-03-05 | Toray Industries, Inc. | Vacuum film deposition device and vacuum film deposition method |
KR102099712B1 (ko) * | 2013-01-15 | 2020-04-10 | 삼성전자주식회사 | 패턴 형성 방법 및 이를 이용한 반도체 소자의 제조 방법 |
CN104213071B (zh) * | 2013-06-01 | 2018-02-06 | 昆山允升吉光电科技有限公司 | 一种掩模板的制作工艺 |
TWM508803U (zh) * | 2013-11-20 | 2015-09-11 | Applied Materials Inc | 用於製造有機發光二極體(oled)的陶瓷遮罩組件 |
CN104451537B (zh) * | 2014-12-19 | 2017-02-22 | 昆山工研院新型平板显示技术中心有限公司 | 用于蒸镀工艺的掩膜板的制造方法及其结构 |
CN104862647B (zh) * | 2015-05-13 | 2017-10-17 | 京东方科技集团股份有限公司 | 一种掩膜板及其制备方法、显示面板、显示装置 |
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2015
- 2015-12-22 CN CN201510973338.XA patent/CN105449126B/zh active Active
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Publication number | Publication date |
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CN105449126A (zh) | 2016-03-30 |
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PB01 | Publication | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20211103 Address after: No.8, liufangyuan Henglu, Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: WUHAN TIANMA MICROELECTRONICS Co.,Ltd. Patentee after: Wuhan Tianma Microelectronics Co.,Ltd. Shanghai Branch Patentee after: Tianma Micro-Electronics Co.,Ltd. Address before: 201201, 889, Qing Qing Road, Shanghai, Pudong New Area Patentee before: SHANGHAI TIANMA AM-OLED Co.,Ltd. Patentee before: Tianma Micro-Electronics Co.,Ltd. |
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