WO2013127653A1 - Lichtquelle mit led-chip und leuchtstoffschicht - Google Patents
Lichtquelle mit led-chip und leuchtstoffschicht Download PDFInfo
- Publication number
- WO2013127653A1 WO2013127653A1 PCT/EP2013/053201 EP2013053201W WO2013127653A1 WO 2013127653 A1 WO2013127653 A1 WO 2013127653A1 EP 2013053201 W EP2013053201 W EP 2013053201W WO 2013127653 A1 WO2013127653 A1 WO 2013127653A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phosphor
- light source
- light
- ceramic
- layer
- Prior art date
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 72
- 239000000919 ceramic Substances 0.000 claims description 41
- 239000012190 activator Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 229920001296 polysiloxane Polymers 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000945 filler Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 238000004382 potting Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000009877 rendering Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 230000009102 absorption Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 phosphor ions Chemical class 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/02—Combinations of only two kinds of elements
- F21V13/08—Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
- F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Definitions
- Light source with LED chip and phosphor layer The invention relates to a light source comprising a
- LED chip having a light-emitting surface on which a phosphor layer is arranged.
- LED chip emits at a light emitting surface of the primary light of a first wavelength (for example, blue light) and the rindemittie ⁇ Rende surface with silicone covered is, where a first phosphor and a second phosphor are included ⁇ mixes as fillers ,
- the first phosphor converts the primary light partly into a first secondary light of greater wave ⁇ length (for example, in green light) to and the second phosphor converts the primary light partly into a second secondary ⁇ light of a different, yet greater wavelength (for example, in red light) to , Consequently, the light emitting diode emits a mixed light with a proportion of the primary light, the first secondary light and the second secondary light, for example a white or whitish (eg warm white) mixed light.
- a first phosphor and a second phosphor are included ⁇ mixes as fillers
- the first phosphor converts the primary light partly into a first secondary light of greater wave ⁇ length (for example, in green light) to
- the first secondary light with the shorter wavelength can be partially converted from the second phosphor into the second secondary light with the wavelength that is greater.
- These multiple wave conversion ⁇ processes lead to a quantum efficiency loss and also to a less attractive spectrum with a low color rendering index of typically about 80.
- the problem of multiple wave conversion can be solved in lighting devices with multiple light-emitting diodes in that a first subset of the light emitting diodes has a phosphor layer with only the first phosphor and a second subset of LEDs a phosphor layer with only the second phosphor.
- This allows ei ⁇ nen high color rendering index of about 90.
- the disadvantage is that to several LEDs are required, and particularly in big win ⁇ angles a color homogeneity is lower, the main radiation direction.
- Phosphor layers comprise a ceramic base material to which at least one activator (often a rare earth such as Ce or Eu) is added.
- the ceramic phosphor layer is given the capability of wavelength conversion by adding a Akti ⁇ vators.
- the ceramic base material (without activator) is typically transparent or translucent.
- the ceramic phosphor layers can be prepared analogously to other ceramic bodies, in particular, for example (or similar, if necessary, while remaining less Men ⁇ gene of sintering aids) by sintering pre-formed green bodies, and so there are at least substantially from the ceramic phosphor.
- the use of ceramic phosphor layers has the advantage that they enable efficient wavelength conversion (eg at least 10% more efficient for wavelength conversion in green or yellow), are thermally highly conductive (with about 10 W / (mK)), mechanically stable are and have a low light attenuation.
- the disadvantage is that although green and yellow ceramic phosphors are are comparatively simple and inexpensive to produce, but no red ceramic phosphors.
- a light source comprising an LED chip having a light emitting surface on which a phosphor layer is arranged, wherein the phosphor layer juxtaposed regions with un ⁇ ter Kunststofflichen phosphors having.
- the juxtaposition of the phosphors considerably reduces mutual interference or reabsorption in comparison to a previously used phosphor mixture, thus providing a high color rendering index.
- a single light source may have multiple phosphors.
- the number of phosphors is basically not limited and may include two or more phosphors, such as a green, yellow and / or red phosphor.
- a first region has a first phosphor and at least one second region has a second phosphor and the at least one second region is arranged in a respective recess of the first region.
- This allows for integration un ⁇ differently phosphor producible areas, in particular a production technique is easy to handle, for example, mechanically stable, the first region and a replenishment of the at least one recess having a bad manufacturing technology handleable and / or easily fillable second phosphor or area.
- a size of the recess, an amount of the second phosphor, and consequently the degree of conversion of the second region in the recess are relatively dimensioned precisely, which supports a precise adjustment of the total color point of the mixed light and a single light source ⁇ .
- the first region may also have at least one recess for a third or even further phosphor, which form corresponding third or further regions.
- the shape of the recess is not limited, with a circular shape is preferred manufacturing technology. However, e.g. also a square, oval or free form usable.
- the recess is preferred for easy production and strong radiation with the primary light preferably throughout.
- the first phosphor is a ceramic phosphor and the first region is a ceramic layer made of the first phosphor.
- This has all the advantages of ceramic phosphor layers and is in particular mechanically stable and enables a precise introduction of the recesses, for example by a corresponding shaping of a green body.
- the ceramic layer is present as a platelet (with a constant thickness). This allows a highly uniform degree of conversion over the area of the ceramic layer.
- a thickness of the ceramic phosphor layer is between about 30 and about 350 microns. Such a layer thickness allows low light losses with concurrent precise adjustment of the degree of conversion up to a practically complete conversion with a degree of conversion ⁇ Cä.
- the ceramic layer has a lower, not with activator (s) provided (eg doped) doped portion (lower sub-layer or layer) and an upper, provided with at least one activator (eg doped).
- a further advantage is that such a small t ⁇ nere surface the recess (es) of the first area is needed because a larger amount of the primary light in the off savings located second luminous material or the at least one second (fluorescent) meets the range.
- this may be manufacture technically advantageous and it also allows a shorter thermal path through the second region and the second phosphor (in particular, by serving as a matrix material silicone) towards the first (into ⁇ special ceramic and, consequently, good thermal conductivity) range and therefore an improved heat dissipation.
- the lower portion of the ceramic layer consists in particular ⁇ special of a transparent or translucent ceramic material.
- the ceramic layer having Ce as activator doped LuAG or YAG as a ceramic phosphor can be present in particular as activator ion Ce3 +. It is a continuing education that Ce or the Ce3 + is present at a concentration between about 0.5% and 3%.
- Eu can be present in particular as activator ion Eu2 +. It is a further development that Eu or Eu2 + is present with a concentration between approx. 0.5% and 2%.
- the second phosphor is present as a in a potting material, in particular silicone, is ⁇ betteter filler.
- a second phosphor can be filled particularly easily into the at least one recess, for example by doctoring.
- the second phosphor may in particular be a red phosphor which generates red second secondary light.
- the second phosphor is an Eu-doped nitride ceramic phosphor. It is a development of that the second phosphor
- an area ratio of the second area is between about 1/3 and about 2/3. On the one hand, this enables a sufficiently high proportion of the second secondary light and sufficient stability and manageability of the first region.
- the object is also achieved by a lighting device comprising at least one light source as described above. It is an embodiment that the lighting device comprises or is a housed light source. This allows the provision of a single light source with improved egg properties.
- the housed light source may be in particular a light-emitting diode housed.
- the lighting device comprises a plurality applied on a common carrier Lichtquel ⁇ len.
- the lighting device may in particular be a lighting module or a lamp.
- a common diffuser element is optically connected downstream. This increases uniformity of the light radiated from the light emitting device from ⁇ light, in particular in view of its brightness and / or color.
- Ele ⁇ elements may be provided with the same reference numerals for clarity.
- Fig.l shows a top view of a light source according to a first embodiment
- FIG. 2 shows the light source according to the first embodiment ⁇ example as a sectional view in side view
- FIG. 3 shows a top view of a light source according to a second embodiment
- Lighting device with a plurality of light sources according to the first embodiment.
- Fig.l shows a top view of a light source 11 according to a first embodiment.
- 2 shows the light source 11 as a sectional view in side view.
- the light source 11 includes an LED chip 12 having a devisei ⁇ term light emitting surface 13 on which a phosphor layer 14 is disposed. From the rindemittie ⁇ - generating surface 13 is blue primary light can be emitted, for example, with a peak wavelength between 440 nm and 460 nm.
- the phosphor layer 14 covers the light-emitting top ⁇ surface 13 over the entire surface except for an opening for a bonding pad 15 of the LED chip 12.
- the other electrical contact of the LED chip 12 is provided on the underside (o.Abb.).
- the phosphor layer 14 has two adjacently arrange ⁇ te regions 16, 17 with different phosphors, namely a first region 16 having a first luminous material and a circular, vertical through recess 18 and a recess 18 which fills the second region 17 with a second phosphor.
- An area proportion of the two ⁇ th area 17 (in plan view) is about 1/3 here.
- the first phosphor converts the blue primary light at least partially into green or green-yellow secondary light.
- the first phosphor is a ceramic phosphor and comprises here in particular Ce doped with Lu as activator or YAG, in particular with a Ce concentration between about 0.5% and 3% or with Eu as activator doped Sr-SiON with an Eu concentration between about 0.5% and 2%.
- the first phosphor forms the first region 16 as platelets having a thickness between about 30 and about 350 microns.
- the second region 17 present in the recess 18 is formed as a potting material with a transparent polymer (here: silicone) as the base material, in which the second phosphor is embedded as filler material in the form of phosphor particles.
- the second phosphor converts the blue primary light at least partially into red secondary light.
- the second phosphor is here in particular one with Eu as Activator doped nitride ceramic fabric, in particular
- the light emitted from the light source 11 is a hot-white mixed light with a color temperature between 2700 K and 3000 K from the non-converted part of the Pri ⁇ märlichts, the first secondary light and the second secondary light here.
- 3 shows a top view of a light source 21 according to a second embodiment.
- the light source 21 differs from the light source 11 in that it has four recesses 22 in the first region 23, but which have only a quarter of the surface of the recess 18.
- the recesses 22 are filled with respective second regions 24 with the second phosphor.
- the first region 32 in the form of a ceramic layer now has a lower, non-activator portion 33 or layer (eg of LuAG, YAG or (Ba, Sr) -SiON) and an upper, with at least an activator (eg Ce and / or Eu) provided (eg doped) portion 34 or position of a
- the ceramic Grundma ⁇ TERIAL is preferably identical.
- This exemplary embodiment can also be understood as a ceramic two-layer structure whose upper subarea 34 or layer comprises ceramic phosphor and whose lower subarea 33 or layer has a translucent (in particular transparent) ceramic which has no wavelength conversion property. The embodiment provides the advantage that the waves ⁇ wavelength conversion of the first region 32 farther
- a further advantage is that a smaller area of the recess 18 of the first area 32 is required because a larger amount of primary light strikes the second phosphor located in the recess 18.
- this exemplary embodiment may be advantageous in terms of manufacturing technology and, moreover, permits a shorter thermal path through the second region 17 toward the first, thermally well-conducting region 32 and thus improved heat dissipation.
- the lighting device 41 has a common carrier 42, on the front side 43 a plurality of light sources ⁇ 11 are arranged.
- the carrier 42 may be, for example, a printed circuit board (in particular a metal core printed circuit board for effective heat dissipation) or a ceramic substrate.
- the carrier 42 may, for example, be circular disk-shaped.
- the front side 43 of the carrier 42 is provided between the light sources 11 with a reflective layer 44 to increase a light output ⁇ yield.
- the light sources 11 and the reflective layer 44 are surrounded by an annular circumferential side wall 45, which also carries a translucent light-permeable diffuser plate 46.
- the diffuser plate 46 serves as the light sources 11 devissa ⁇ mes diffuser element and is spaced apart optically downstream.
- the diffuser plate 46 increases a homogeneity of the mixed light emitted by the lighting device 41.
- the diffuser plate 46 may, for example, with diffuse reflective Particles (eg alumina particles) offset silicone exist.
- a space 47 between the light sources 11 and the reflec- Governing layer 44 on the one hand and the diffuser plate 46 on the other hand, ⁇ may be free or, as shown, filled 48 or other polymer by means of a transparent silicone poured into special ⁇ be.
- the diffuser plate 46 may have been provided by means of a potting process.
- the diffuser layer is not spaced from the at least one light source, but for example directly covers the at least one light source. In this case, not to ⁇ slegiaji space is there between the at least one Lichtquel- le and the diffuser layer is present.
- the present invention is not limited to the embodiments shown.
- the light sources may also have third or further regions with a third or further phosphor.
- the lighting device may also have other light sources, e.g. according to the second or third embodiment.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020147027242A KR20140141615A (ko) | 2012-02-27 | 2013-02-18 | Led 칩 및 발광단 층을 갖는 광원 |
US14/377,508 US10533729B2 (en) | 2012-02-27 | 2013-02-18 | Light source with LED chip and luminophore layer |
CN201380008533.8A CN104106151A (zh) | 2012-02-27 | 2013-02-18 | 具有led芯片和发光材料层的光源 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012202927.3A DE102012202927B4 (de) | 2012-02-27 | 2012-02-27 | Lichtquelle mit led-chip und leuchtstoffschicht |
DE102012202927.3 | 2012-02-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013127653A1 true WO2013127653A1 (de) | 2013-09-06 |
Family
ID=47749812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2013/053201 WO2013127653A1 (de) | 2012-02-27 | 2013-02-18 | Lichtquelle mit led-chip und leuchtstoffschicht |
Country Status (5)
Country | Link |
---|---|
US (1) | US10533729B2 (de) |
KR (1) | KR20140141615A (de) |
CN (1) | CN104106151A (de) |
DE (1) | DE102012202927B4 (de) |
WO (1) | WO2013127653A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013207448A1 (de) * | 2013-04-24 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Konverterelement, Baugruppe, Hintergrundbeleuchtung und Anzeigevorrichtung |
DE102013217410A1 (de) * | 2013-09-02 | 2015-03-19 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul und Verfahren zu seiner Herstellung |
DE102015203578A1 (de) | 2015-02-27 | 2016-09-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur herstellung von optoelektronischen bauelementen und optoelektronische bauelemente |
JP6728931B2 (ja) * | 2016-04-21 | 2020-07-22 | セイコーエプソン株式会社 | 光源装置およびプロジェクター |
DE102017113375A1 (de) | 2017-06-19 | 2018-12-20 | Schreiner Group Gmbh & Co. Kg | Folienaufbau mit Erzeugen von sichtbarem Licht mittels LED-Technologie |
DE102017113380A1 (de) | 2017-06-19 | 2018-12-20 | Schreiner Group Gmbh & Co. Kg | Folienaufbau mit Erzeugen von sichtbarem Licht mittels LED-Technologie |
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2012
- 2012-02-27 DE DE102012202927.3A patent/DE102012202927B4/de active Active
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2013
- 2013-02-18 KR KR1020147027242A patent/KR20140141615A/ko not_active Application Discontinuation
- 2013-02-18 WO PCT/EP2013/053201 patent/WO2013127653A1/de active Application Filing
- 2013-02-18 CN CN201380008533.8A patent/CN104106151A/zh active Pending
- 2013-02-18 US US14/377,508 patent/US10533729B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007102095A1 (en) * | 2006-03-06 | 2007-09-13 | Koninklijke Philips Electronics N.V. | Light emitting diode module |
DE102006024165A1 (de) * | 2006-05-23 | 2007-11-29 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips |
WO2009115998A2 (en) * | 2008-03-21 | 2009-09-24 | Koninklijke Philips Electronics N.V. | A luminous device |
US20100148200A1 (en) * | 2008-12-15 | 2010-06-17 | Foxsemicon Integrated Technology, Inc. | Light emitting diode with light conversion |
US20110148279A1 (en) * | 2009-12-21 | 2011-06-23 | Bingqian Li | White led phosphor film and its manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
KR20140141615A (ko) | 2014-12-10 |
US10533729B2 (en) | 2020-01-14 |
US20140376223A1 (en) | 2014-12-25 |
DE102012202927A1 (de) | 2013-08-29 |
CN104106151A (zh) | 2014-10-15 |
DE102012202927B4 (de) | 2021-06-10 |
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