WO2013123859A1 - 石墨盘、具有上述石墨盘的反应腔室和对衬底的加热方法 - Google Patents

石墨盘、具有上述石墨盘的反应腔室和对衬底的加热方法 Download PDF

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Publication number
WO2013123859A1
WO2013123859A1 PCT/CN2013/071446 CN2013071446W WO2013123859A1 WO 2013123859 A1 WO2013123859 A1 WO 2013123859A1 CN 2013071446 W CN2013071446 W CN 2013071446W WO 2013123859 A1 WO2013123859 A1 WO 2013123859A1
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Prior art keywords
graphite disk
village
support frame
groove
graphite
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PCT/CN2013/071446
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English (en)
French (fr)
Inventor
梁秉文
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光达光电设备科技（嘉兴）有限公司
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Publication of WO2013123859A1 publication Critical patent/WO2013123859A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Definitions

  • a graphite disk, a reaction chamber having the above graphite disk, and a heating method for the substrate is disclosed.
  • the present invention relates to the field of chemical vapor deposition (CVD) technology, and more particularly to a graphite disk for a chemical vapor deposition apparatus, a reaction chamber, and a heating method for the substrate.
  • CVD chemical vapor deposition
  • MOCVD Metal-Organic Chemical Vapor Deposition
  • a chemical vapor phase epitaxy process developed on the basis of (VPE). It uses the organic compounds of group III and II elements and the hydrides of group V and VI as the source materials for crystal growth, and deposits on the graphite disk by thermal decomposition reaction to grow various III-V groups and II. - Thin layer single crystal materials of Group VI compound semiconductors and their multiple solid solutions.
  • VPE chemical vapor phase epitaxy process
  • Oppositely disposed shower heads 11 and graphite discs 12 are formed in the glove box 10.
  • a plurality of small holes may be disposed in the shower head 11, and the shower head 11 is used to supply a reaction gas.
  • the graphite disk 12 has a plurality of grooves therein, and a piece of the bottom 121 is correspondingly disposed in each of the grooves.
  • the material of the bottom 121 is usually an expensive sapphire.
  • a heating unit 13 is further formed below the graphite disk 12, and the heating unit 13 heats the graphite disk 12, and the graphite disk 12 is heated by heat, and the village bottom 121 can be heated by heat radiation and heat conduction. Since the bottom 121 is placed in the graphite disk 12, the two are in contact, Therefore, the heating of the substrate 121 by the graphite disk 12 is mainly based on heat conduction.
  • the reaction gas enters the reaction region above the graphite disk 12 (the position near the surface of the substrate 121) from the small hole of the shower head 11, and the substrate 121 has a certain heat due to heat conduction of the heating unit 13.
  • the temperature whereby the temperature causes a chemical reaction between the reaction gases to deposit a layer of epitaxial material on the surface of the substrate 121.
  • the problem solved by the embodiment of the present invention is to provide a graphite disk, a reaction chamber containing the above graphite disk, and a heating method for the bottom of the village, which improves the uniform heating of the bottom of the village (especially the deformed village bottom).
  • sexuality improves the uniformity of the chemical vapor deposition process and improves the yield of epitaxial chips.
  • the present invention provides a graphite disk of a chemical vapor deposition process, having a groove, the groove is located at a position corresponding to a support frame, the support frame is used to suspend the bottom of the village, so that the bottom of the village Not in contact with the graphite disk.
  • the support frame has a ring shape, the support frame surrounds the bottom of the groove for one week, and the support frame is located below the bottom of the village.
  • the side wall and the bottom of the groove form a V shape.
  • the sum of the thickness of the support frame and the bottom of the substrate placed therein is equal to the depth of the groove.
  • the support frame is suspended on the graphite disk on both sides of the slot, the top of the support frame is fixed on the graphite disk on both sides of the slot, and the bottom of the support frame is used for placing the bottom of the support .
  • the shape of the support frame is Z-shaped or stepped.
  • the front side of the support frame and the front side of the bottom of the support are flush with the front surface of the graphite disk.
  • the graphite disk has a hole in the edge of the substrate corresponding to the graphite disk, and the hole is used to reduce heat radiation of the graphite disk to the edge of the village bottom.
  • the support frame is made of a transparent material or a heat insulating material.
  • the transparent material is one of quartz and sapphire or a mixture thereof.
  • the heat insulating material is ceramic, cerium oxide or a mixture of the two.
  • a plurality of apertures are formed on the surface of the support frame that is in contact with the bottom of the village for reducing the contact area between the support frame and the bottom of the village.
  • the portion of the support frame for placing the bottom of the village is a double ring structure or a plurality of support columns.
  • the depth of the groove ranges from 300 micrometers to 2 millimeters, and the height of the support frame ranges from 290 micrometers to 1.7 millimeters.
  • the invention also provides a heating method for the bottom of the village during the chemical vapor deposition process, using the support frame corresponding to the trough, suspending the bottom of the village, so that the bottom of the village is not in contact with the graphite disk, and the graphite disk is used. Thermal radiation heats the bottom of the village.
  • the present invention also provides a reaction chamber for a chemical vapor deposition apparatus comprising the graphite disk.
  • the present invention has the following advantages:
  • the groove of the graphite disk provided by the embodiment of the invention has a support frame corresponding thereto, and the bottom of the village is suspended by the support frame, so that the bottom of the village is not in contact with the graphite disk, and the graphite disk is used as a village during the chemical vapor deposition process.
  • the heat source of the bottom (the graphite disk is heated by the heating of the heating unit to provide heat by heat radiation and heat conduction). Since the bottom of the substrate is not in contact with the graphite disk, the heating of the bottom of the village can be achieved by using the graphite disk according to the present invention.
  • the main method is thermal radiation, and the prior art places the bottom of the village directly in the groove of the graphite disk (ie, the bottom of the village is in direct contact with the graphite disk), so the prior art heats the bottom of the village.
  • the heat conduction is dominant.
  • the warping deformation occurs at the bottom of the village, the prior art is likely to cause uneven heating of the points at the bottom of the village, resulting in unevenness of the epitaxial material layer formed on the bottom of the village. Since the present invention uses heat radiation to heat up, the elimination is eliminated.
  • the prior art utilizes heat conduction heating to affect the unevenness of heating at various points on the bottom of the village, improves the uniformity of heating at the bottom of the village, and correspondingly improves the uniformity of the chemical vapor deposition process and the layer of epitaxial material formed on the substrate. Uniformity
  • the front surface of the support frame and the front surface of the bottom of the support frame are flush with the front surface of the graphite plate, so that the graphite disk and the support frame on both sides of the village bottom can affect the distribution of the airflow on the front side of the village bottom, and further improve the front of the village bottom.
  • the graphite disk has a hole in the graphite disk corresponding to the edge of the bottom of the village, the hole is used to reduce the heat radiation of the graphite disk to the edge of the village bottom, so that the edge of the village bottom
  • the central part of the village receives the same thermal radiation, which further improves the uniformity of heat at the bottom of the village;
  • the surface of the support frame that is in contact with the bottom of the support frame is formed with a plurality of apertures for reducing the contact area between the support frame and the bottom of the village, reducing heat conduction from the graphite disk, and further improving the bottom of the village.
  • Heat uniformity
  • the support frame is suspended on the graphite disk on both sides of the slot, the top of the support frame is fixed on the graphite disk on both sides of the slot, and the bottom of the support frame is used for placing the bottom of the support frame.
  • the shape of the support frame is a Z-shaped ring.
  • FIG. 1 is a schematic structural view of a prior art MOCVD apparatus
  • 2 is a schematic structural view of a sapphire substrate and a graphite disk which are warped and deformed
  • 3 is a schematic structural view of a warped deformed silicon substrate and a graphite disk
  • FIG. 4 is a schematic structural view of a graphite disk according to a first embodiment of the present invention.
  • Figure 5 is a top plan view of the graphite disk shown in Figure 4.
  • Figure 6 is a schematic structural view of a graphite disk according to a second embodiment of the present invention.
  • Figure 7 is a schematic structural view of a graphite disk according to a third embodiment of the present invention.
  • Figure 8 is a schematic structural view of a graphite disk according to a fourth embodiment of the present invention.
  • Figure 9 is a schematic structural view of a graphite disk according to a fifth embodiment of the present invention.
  • Figure 10 is a schematic structural view of a graphite disk according to a sixth embodiment of the present invention.
  • Figure 11 is a schematic view showing the bottom structure of the support frame of Figure 9;
  • Figure 12 is a schematic structural view of a graphite disk according to a seventh embodiment of the present invention.
  • Figure 13 is a schematic structural view of a graphite disk according to an eighth embodiment of the present invention.
  • Figure 14 is a schematic structural view of a graphite disk according to a ninth embodiment of the present invention.
  • Figure 15 shows the temperature distribution curve of the warping deformation of the silicon substrate.
  • the bottom of Changcun is placed in a graphite disk, and the two are in contact.
  • the graphite disk can heat the bottom of the village by heat conduction and heat radiation.
  • the distance between the points where the village floor should be in contact with the graphite disk and the graphite disk is different, so that the bottom of the village is unevenly heated.
  • the inventors have also found that, based on different materials, the tendency of the warping deformation of the village bottom under the action of stress is different. Although different materials The tendency of warping deformation at the bottom of the village is different, but it will cause uneven heating at the bottom of the village.
  • the graphite disk 12 has a groove therein, and the front surface of the graphite disk 12 faces the shower head (not shown).
  • the bottom of the graphite disk 12 is placed with a village bottom 121, and the front surface of the substrate 121 faces the shower head.
  • the material of the bottom 121 is sapphire. Due to the stress, the back surface of the village bottom 121 (the surface opposite to the front surface) is originally formed in the same plane at three points A, B, and C.
  • the opening is upward, and the entire bottom 121 is in the shape of a bowl on the bowl in the groove.
  • the graphite disk 12 is in direct contact, so point A and point C can receive heat from the graphite disk 12 in both heat radiation and heat conduction, and can gradually transfer part of the heat to point B, and point B.
  • heat from the graphite disk 12 can only be received by thermal radiation, which causes the points of the village bottom 121 to be unevenly heated, and the temperature of the village bottom 121 decreases from the edge toward the center.
  • the warp deformation is opposite to that of a sapphire village.
  • the same structures as those in FIG. 2 are denoted by the same reference numerals.
  • the bottom 121 of the village is placed in the graphite disk 12 in the front direction, and the material is silicon. Due to the stress, the back surface of the bottom 121 is originally in the same plane, and the three points A, B and C form an arc (circle).
  • the opening of the arc is downward, but the opening direction of the arc is opposite to the opening direction of the arc of the back of the sapphire village bottom, and the entire bottom 121 is in the shape of a bowl with a bowl down (downturn).
  • the point C on the back side of the village bottom 121 is capable of receiving heat from the graphite disk 12 in both heat conduction and heat radiation due to direct contact with the graphite disk 12, and the point C transfers heat to the middle of the village bottom 121, and for B Point and point A can only accept heat from the graphite disk 12 in the form of heat radiation, which causes the edge temperature of the village bottom 121 to be high, the middle temperature to be low, and for the deformation described in Fig. 3, the heat conduction in the middle portion of the village bottom is received.
  • the heat is less than the heat transferred by the middle of the village in Figure 2, and the heat is even more
  • the temperature distribution of the village bottom 121 is uneven.
  • the temperature at the edge of the village is higher than the temperature at the bottom of the village.
  • the impact of this method makes the existing method generally have uneven heating problems for the heating of the village floor.
  • the silicon substrate is more severe due to its warpage deformation as the opening is downward and the temperature of the edge and the middle portion is not uniform.
  • the present invention provides a new method for heating a village bottom, which uses a support frame corresponding to a slot to suspend the bottom of the village so that the bottom of the village does not touch the graphite disk.
  • the bottom of the village is heated by thermal radiation from a graphite disk.
  • the method is applicable to the MOCVD process, and of course, it is also applicable to other chemical vapor deposition processes in which the substrate is heated and deformed by heat radiation to affect the process uniformity.
  • the invention transforms the heating mode of the village bottom, so that the existing heat conduction (main heating mode) and the heat radiation jointly heat the village bottom to adopt the method of heating the bottom of the village by heat radiation or heating by heat radiation.
  • the main heating of the bottom of the village improves the uniformity of heat at each point of the village.
  • warping deformation occurs at the bottom of the village, although the distance between each point of the village bottom and the graphite disk below is different, the above difference has little effect on the heat radiation heating, and therefore, the method of the embodiment of the present invention can be used to achieve The warped deformation of the village floor achieves a more uniform heating.
  • the graphite disk of the existing MOCVD equipment is usually provided with a groove, and the bottom of the village is placed in the groove.
  • the invention can be supported by the graphite disk on both sides of the groove or the groove.
  • the shelf is suspended on the graphite disk so that the bottom of the village is not in contact with the graphite disk, and the bottom of the village is heated by the heat radiation of the graphite disk.
  • the structure of the graphite disk of the first embodiment of the present invention shown in Fig. 4 is incorporated.
  • the face of the graphite disk 20 is upward, and the graphite disk 20 has a recess therein, the groove having a side wall and a bottom.
  • the side walls of the grooves are along the sides perpendicular to the front surface of the graphite disk 20, and the bottom of the grooves exposes the graphite disk 20 below.
  • the front side of the graphite disk according to the present invention refers to the surface of the graphite disk facing the side of the shower head (not shown), and the above definition is applicable in its entirety.
  • the support frame 21 of the present invention is located at the bottom of the groove, and the support frame 21 surrounds the bottom of the groove, and the bottom 22 is located above the support frame 21.
  • the support frame 21 is used for suspending the village bottom 22 so that the village bottom 22 is not in contact with the graphite disk 20, thereby eliminating heat conduction caused by the contact between the village bottom 22 and the graphite disk 20, so that the graphite disk 20 is opposite to the bottom 22 of the village.
  • Heating is heat radiation or heat radiation.
  • FIG. 5 is a schematic plan view of the graphite disk shown in FIG. 4 .
  • the support frame 21 has a ring shape.
  • the annular support frame 21 surrounds the side wall and the bottom of the groove, and the bottom 22 is located on the support frame 21.
  • the support frame 21 is located below the village bottom 22.
  • the back side of the village bottom 22 is not in contact with the graphite disk 20.
  • the height L of the support frame 21 should be such that when the village bottom 22 exhibits a bowl-like deformation (i.e., the middle portion of the bottom 22 is deformed toward the bottom of the groove), the back surface of the bottom 22 remains in contact with the graphite disk 20.
  • the sum of the height L of the support frame 21 and the thickness D of the village bottom 22 should be equal to the depth 11 of the groove.
  • the thickness D of the substrate 22 according to the present invention refers to the distance between the front surface (the surface facing the shower head side) and the back surface (the surface opposite the front surface) of the substrate without deformation, which is described in the present invention.
  • the height L of the support frame refers to the distance between the front side and the back side of the support frame 21 (the surface facing the front side and the side farthest from the shower head).
  • the depth H of the groove ranges from 300 micrometers to 2 millimeters
  • the thickness of the substrate 22 ranges from 300 micrometers to 1.5 millimeters. Accordingly, the height of the support frame 21 ranges from 290 micrometers to 290 micrometers. 1.7 mm.
  • the graphite disk 20 can transfer part of the heat to the village bottom 22 by heat conduction, but the heat conduction by the heat conduction mode is limited. It has little effect on the uniformity of heat of the village bottom 22.
  • a heat insulating layer may be disposed between the two sides of the substrate 22 and the graphite disk 20, and the material of the heat insulating layer may be ceramic.
  • the width of the support frame 21 should be as small as possible to reduce contact with the substrate 22.
  • the width of the support frame 21 ranges from 1/10 to 1/20 of the radius of the bottom of the village to ensure that the bottom 22 can be stably suspended.
  • the support frame 21 is made of graphite, which can be processed separately from the graphite disk 20, or can be separately processed, and then fixed to the graphite disk 20 by mechanical parts such as screws and nuts or through resistance.
  • the hot glue is bonded to the graphite disk 20 in one piece.
  • the material of the support frame 21 may be a transparent material, so that the heat of the graphite disk 20 under the support frame 21 can be transmitted to the village bottom 22 through the support frame 21.
  • the material of the support frame 21 may be quartz, sapphire or a mixture of the two.
  • the material of the support frame 21 is sapphire.
  • the support frame 21 The material can also be a heat insulating material, which can reduce the heat transfer of the graphite disk 21 to the bottom of the substrate 22.
  • the material of the support frame 21 can be ceramic, zirconia or a mixture of the two.
  • the side wall and the bottom of the groove may have a certain inclination, and the side wall and the bottom of the groove form a V shape.
  • the purpose is to make the diameter of the bottom of the groove larger than the diameter at the opening of the front surface of the groove, so that the entire groove has a truncated cone shape, which ensures that the position of the bottom 22 is relatively stable with the rotation of the graphite disk 20.
  • FIG. 6 a schematic structural view of a graphite disk according to a second embodiment of the present invention shown in FIG. 6 will be described.
  • the same structures as those of the first embodiment are given the same reference numerals.
  • the present embodiment differs from the previous embodiment in that the graphite disk 20 has a hole therein which is located in the graphite disk 20 below the groove at the edge of the village bottom 22. The holes are used to reduce the thermal radiation of the graphite disk 20 to the edge of the substrate 22.
  • the present invention passes through the graphite disk at the edge of the bottom 22 of the village.
  • the hole is provided in 20 to reduce the heat radiation to the edge of the village bottom 22, so that the temperature of the edge of the village bottom 22 coincides with the temperature of the middle portion of the village bottom 22.
  • the holes in the embodiment of the present invention are located in the graphite disk 20 on both sides of the village bottom 22, and the holes are provided on the front surface of the graphite disk 20, also for facilitating the processing of the graphite disk 20.
  • the hole may also be located at other locations near the edge of the village bottom, for example, the hole may be located in the graphite disk below the edge of the village bottom, or may be located in the graphite disk on both sides of the edge of the village bottom.
  • the hole may be in communication with the groove, or there may be partial graphite disk isolation between the hole and the groove, as will be described in detail in the following embodiments.
  • the support frame 21 is of a step type. That is, the top of the support frame 21 is in contact with the front surface of the graphite disk 20 on both sides of the groove, the side graphite disk 20 of the support frame 21 is in contact, and the bottom of the support frame 21 is suspended on the groove.
  • the bottom of the support frame 21 is used for placing the bottom 22, and the side wall of the support frame 21 isolates the side of the bottom 22 from the graphite disk 20, so that the bottom 22 is completely out of contact with the graphite disk 20, thereby reducing the graphite disk.
  • the heat is transferred to the bottom 22 by heat conduction, so that the heating of the bottom plate 22 of the graphite disk 20 is mainly by heat radiation, thereby further improving the uniformity of heat to the bottom 22 of the village.
  • the front surface of the support frame 21 and the front surface of the bottom 22 are flush with the front surface of the graphite disk 20, so that the support frame 21 and the graphite disk 20 can be prevented from affecting the gas above the village bottom 22, thereby improving The airflow distribution above the village bottom 22 is uniform.
  • the front side of the support frame of the present invention refers to the surface of the support frame facing the side of the shower head (not shown), and the above definition applies to the full text.
  • the graphite disk 20 has a hole therein, and the hole is located at the bottom of the village.
  • the bottom of the groove of the edge of 22 is used to reduce the thermal radiation of the graphite disk 20 to the edge of the substrate 22.
  • the hole is in communication with the groove, and can be fabricated by using the same process step, which facilitates the processing and fabrication of the graphite disk 20.
  • the same components as those of the previous embodiment are denoted by the same reference numerals.
  • the difference between this embodiment and the previous embodiment is that the side wall and the bottom of the groove form a V-shape, and correspondingly, the shape of the support frame 21 is Z-shaped, and the support frame 21 is hung on the graphite disk 20 on both sides of the groove.
  • the top of the support frame 21 is fixed to the slot On the graphite disk 20 on both sides, the bottom of the support frame 21 is used to place the village bottom 22.
  • the village bottom 22 can be better fixed to prevent the village bottom 22 from being thrown out as the graphite disk 20 rotates.
  • the holes are located in the graphite disk 20 below the edge of the village bottom 22.
  • the same structures as those of the previous embodiment are denoted by the same reference numerals.
  • the difference between this embodiment and the previous embodiment is that the front surface of the substrate 22, the front surface of the support frame 21 and the front surface of the graphite disk 20 are flush, which is advantageous for improving the uniformity of gas distribution on the surface of the village bottom 22.
  • the same structures as those of the previous embodiment are denoted by the same reference numerals.
  • the difference between this embodiment and the previous embodiment is that a hole is formed in the side wall of the edge of the substrate 22 and the graphite disk 20 at the bottom, and in the embodiment, the hole communicates with the groove.
  • a portion of the graphite disk 20 may be isolated between the holes and the grooves.
  • the shape of the support frame 21 is a stepped shape, and the sidewall of the support frame 21 is not in contact with the graphite disk 20 on both sides of the groove, thereby preventing the graphite disk 20 from passing heat through the sidewall of the support frame 21. Conducted to the village bottom 22 to prevent excessive heating of the edge of the village bottom 22, causing the edge temperature of the village bottom 22 to be higher than the temperature of the middle portion of the village bottom 22, further improving the uniformity of the temperature distribution of the village bottom 22.
  • the bottom of the support frame 21 is not in contact with the graphite disk 20, and the graphite disk 20 can be prevented from transmitting heat to the edge of the village bottom 22 through the support frame 21, thereby reducing the temperature of the edge and the middle portion of the village bottom 22.
  • the difference further improves the uniformity of the distribution of the temperature of the village bottom 22.
  • the uniformity of the temperature distribution at the edge and the middle of the village bottom is improved, and as an optional embodiment, the support frame and the bottom of the village can also be The contact portion forms a void, which further reduces the contact area of the support frame with the substrate.
  • the structural schematic diagram of the bottom of the support frame in FIG. 9 shown in FIG. please refer to the structural schematic diagram of the bottom of the support frame in FIG. 9 shown in FIG.
  • the top of the support frame (not shown) is placed on the graphite disk, and the bottom of the support frame (i.e., the portion for placing the bottom of the village) has a double ring structure.
  • the bottom of the support frame specifically includes an outer ring 211, an inner ring 212, and a connecting bridge 213 connecting the outer ring 211 and the inner ring 212.
  • the support frame adopting the double annular structure has less contact area with the bottom of the village, and reduces the heat transfer of the heat transfer of the graphite disk through the support frame to the bottom of the village.
  • FIG. 12 a schematic structural view of a graphite disk according to a seventh embodiment of the present invention.
  • the same structures as those of the sixth embodiment are denoted by the same reference numerals.
  • the difference between this embodiment and the sixth embodiment is that the bottom 22 is placed face up on the stepped support frame 21, and the front surface of the bottom 22 and the front surface of the support frame 21 are flush with the front surface of the graphite disk 20.
  • the difference between this embodiment and the sixth embodiment is that the shape and position of the holes are different.
  • the hole of this embodiment is located at the bottom of the edge of the bottom 121 and communicates with the bottom of the groove.
  • the depth of the hole of the present invention decreases from the lower side of the side wall of the groove to the middle direction of the bottom portion 121 in the radial direction of the bottom portion 121, and the entire hole is triangular.
  • the use of the holes further eliminates heat radiation at the edge of the village.
  • the horizontal axis D represents the distance from the center of the village floor (in millimeters), and the vertical axis T represents temperature (in ⁇ ).
  • the temperature on the bottom of the village is not quantitatively indicated in the radial direction, but the temperature change trend along the radial bottom is qualitatively shown.
  • the left side of the dotted line is the middle part of the village, and the right side of the dotted line is the bottom edge of the village.
  • Curve 1 is a simulation result of the silicon substrate heating of the warp deformation using the prior art graphite disk. Curve 1 shows that the temperature distribution in the middle of the village is more than the edge temperature distribution at the bottom of the village.
  • Curve 2 is the use of this Simulation results of the silicon substrate heating of the warped deformation of the graphite disk of the example.
  • the temperature distribution in the middle of the village in the curve 2 is more uniform than the temperature distribution at the bottom edge of the village.
  • the temperature at the edge of the village is relatively flat, and the maximum temperature difference between the edge and the middle of the village is less than 4K. It is indicated that the use of the graphite disk of the embodiment of the invention can effectively improve the uniformity of the temperature distribution on the village floor.
  • the support frame 21 is located in the middle of the groove, and the support frame 21 is constituted by a plurality of support columns.
  • the number of the support columns is three, the support columns are arranged in an equilateral triangle, and the center of the equilateral triangle is on the same vertical line as the center of the groove (the vertical line is perpendicular to the bottom of the groove) ).
  • FIG. 10 Please refer to the structural schematic view of the graphite disk of the ninth embodiment of the present invention shown in FIG.
  • the same structures as those of the previous embodiment are denoted by the same reference numerals.
  • the difference between this embodiment and the previous embodiment is that the side wall and the bottom of the groove in the graphite disk 20 form a V-shape, and the bottom of the bottom of the substrate 22 and the graphite disk 20 on both sides are formed with holes, so that The heat radiation to the edge of the village bottom 22 is further reduced.
  • the groove of the graphite disk provided by the embodiment of the invention has a support frame corresponding thereto, and the bottom of the village is suspended by the support frame, so that the bottom of the village is not in contact with the graphite disk, and the graphite is used in the chemical vapor deposition process.
  • the heat source of the village bottom the graphite disk is heated under the heating of the heating unit, it can provide heat by heat radiation and heat conduction). Since the bottom of the plate is not in contact with the graphite disk, the graphite disk according to the present invention can be used to realize the village.
  • the heating of the bottom is mainly based on heat radiation, and the prior art places the bottom of the village directly in the groove of the graphite disk (ie, the bottom of the village is in direct contact with the graphite disk), so the prior art is on the bottom of the village. Heating is mainly based on heat conduction. When warping deformation occurs at the bottom of the village, the prior art tends to cause uneven heating of the points at the bottom of the village, resulting in unevenness of the epitaxial material layer formed on the bottom of the village.
  • the prior art eliminates the influence of heat conduction heating on the unevenness of heating on the bottom of the village, improves the uniformity of heating at the bottom of the village, and correspondingly improves the uniformity of the chemical vapor deposition process and the formation on the bottom of the village. Uniformity of the layer of epitaxial material;
  • the front surface of the support frame and the front surface of the bottom of the support frame are flush with the front surface of the graphite plate, so that the graphite disk and the support frame on both sides of the village bottom can affect the distribution of the airflow on the front side of the village bottom, and further improve the front of the village bottom.
  • the graphite disk has a hole in the graphite disk corresponding to the edge of the bottom of the village, the hole is used to reduce the heat radiation of the graphite disk to the edge of the village bottom, so that the edge of the village bottom
  • the central part of the village receives the same thermal radiation, which further improves the uniformity of heat at the bottom of the village;
  • the surface of the support frame that is in contact with the bottom of the support frame is formed with a plurality of apertures for reducing the contact area between the support frame and the bottom of the village, reducing heat conduction from the graphite disk, and further improving the bottom of the village.
  • Heat uniformity
  • the support frame is suspended on the graphite disk on both sides of the slot, the top of the support frame is fixed on the graphite disk on both sides of the slot, and the bottom of the support frame is used for placing the bottom of the support frame.
  • the shape of the support frame is a Z-shaped ring.

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Abstract

本发明实施例提供一种化学气相沉积工艺的石墨盘、反应腔室和对衬底的加热方法，其中所述石墨盘具有凹槽，所述凹槽所在的位置具有与之对应的支撑架，所述支撑架用于将衬底悬置，使得衬底与石墨盘不接触。本发明通过将衬底悬置，使得石墨盘对衬底的加热为热辐射为主，从而改善了对衬底尤其是发生了翘曲变形的衬底的加热的均匀性，改善了化学气相沉积工艺的均匀性。

Description

石墨盘、 具有上述石墨盘的反应腔室和对衬底的加热方法 本申请要求于 2012 年 02 月 22 日提交中国专利局、 申请号为 201210041203.6、 发明名称为 "石墨盘、 具有上述石墨盘的反应腔室和对村 底的加热方法 "的中国专利申请的优先权，其全部内容通过引用结合在本申请 中。
技术领域
本发明涉及化学气相沉积（CVD )技术领域， 特别涉及化学气相沉积设 备的石墨盘、 反应腔室和对村底的加热方法。
背景技术
MOCVD( Metal-Organic Chemical Vapor Deposition )是在气相外延生长
(VPE)的基础上发展起来的一种化学气相外延沉积工艺。 它以 III族、 II族元 素的有机化合物和 V、 VI族元素的氢化物等作为晶体生长的源材料， 以热分 解反应方式在石墨盘上进行沉积工艺， 生长各种 III -V族、 II -VI族化合物半 导体以及它们的多元固溶体的薄层单晶材料。 为例， 请参考图 1所示的现有的化学气相沉积工艺设备的结构示意图。
手套箱 10内形成有相对设置的喷淋头 11和石墨盘 12。 所述喷淋头 11 内可以设置多个小孔， 所述喷淋头 11用于提供反应气体。 所述石墨盘 12内 具有多个 槽， 每个 槽内对应放置一片村底 121 , 所述村底 121的材质通 常为价格昂贵的蓝宝石。 所述石墨盘 12的下方还形成有加热单元 13, 所述 加热单元 13对石墨盘 12进行加热，石墨盘 12受热升温，能够以热辐射和热 传导方式对村底 121进行加热。由于村底 121放置在石墨盘 12中，两者接触， 因此石墨盘 12对村底 121的加热以热传导为主。
在进行 MOCVD工艺时，反应气体自喷淋头 11的小孔进入石墨盘 12上 方的反应区域（靠近村底 121 的表面的位置）， 所述村底 121 由于加热单元 13的热传导加热而具有一定的温度，从而该温度使得反应气体之间进行化学 反应， 从而在村底 121表面沉积外延材料层。
在实际中发现，现有的化学气相沉积工艺的均匀性不高，外延芯片的良 率偏低。
发明内容
本发明实施例解决的问题是提供了一种石墨盘、 含有上述石墨盘的反应 腔室和对村底的加热方法， 提高了对村底（尤其是发生了变形的村底） 的加 热的均匀性， 改善了化学气相沉积工艺的均匀性， 提高了外延芯片的良率。
为了解决上述问题， 本发明提供一种化学气相沉积工艺的石墨盘， 具有 槽， 所述 槽所在的位置具有与之对应的支撑架， 所述支撑架用于将村底 悬置， 使得村底与石墨盘不接触。
可选地， 所述支撑架的形状为环形， 所述支撑架环绕所述 槽的底部一 周， 所述支撑架位于村底的下方。
可选地， 所述 槽的侧壁与底部构成 V型。
可选地，所述支撑架与其中放置的村底的厚度之和等于所述凹槽的深度。 可选地， 所述支撑架悬挂于所述 槽两侧的石墨盘上， 所述支撑架的顶 部固定于所述 槽的两侧的石墨盘上， 所述支撑架的底部用于放置村底。
可选地， 所述支撑架的形状为 Z型或阶梯型。
可选地， 所述支撑架的正面、 村底的正面与石墨盘的正面齐平。 可选地， 所述石墨盘中具有孔洞， 位于村底的边缘对应石墨盘中， 所述 孔洞用于减小石墨盘对村底的边缘的热辐射。
可选地， 所述支撑架的材质为透明材质或绝热材质。
可选地， 所述透明材质为石英、 蓝宝石中的一种或其混合。
可选地， 所述绝热材质为陶瓷、 氧化梧或两者的混合。
可选地， 所述支撑架的与村底接触的表面上形成有多个孔隙， 用于减小 所述支撑架与村底的接触面积。
可选地，所述支撑架的用于放置村底的部分为双环形结构或多个支撑柱。 可选地， 所述 槽的深度范围为 300微米 ~2毫米， 所述支撑架的高度范 围为 290微米 ~1.7毫米。
本发明还提供一种化学气相沉积工艺过程中对村底的加热方法， 利用与 槽对应的支撑架， 将所述村底悬置， 使得所述村底与石墨盘不接触， 利用 石墨盘的热辐射对所述村底进行加热。
相应地， 本发明还提供一种化学气相沉积设备的反应腔室， 包括所述的 石墨盘。
与现有技术相比， 本发明具有以下优点：
本发明实施例提供的石墨盘的凹槽具有与之对应的支撑架， 利用该支撑 架将村底悬置， 使得村底与石墨盘不接触， 在进行化学气相沉积工艺时， 石 墨盘作为村底的热源 （石墨盘在加热单元的加热下升温， 能够以热辐射和热 传导方式提供热量）， 由于村底与石墨盘不接触， 因此利用本发明所述的石墨 盘能够实现对村底的加热以热辐射方式为主， 而现有技术将村底直接放置在 石墨盘的凹槽中（即村底与石墨盘直接接触）， 因此现有技术对村底的加热以 热传导为主， 当村底发生翘曲变形时， 现有技术容易造成村底的各点受热不 均匀， 导致村底上形成的外延材料层不均匀， 由于本发明利用热辐射方式加 热， 消除了现有技术利用热传导加热给村底上各点的加热的不均匀造成的影 响， 提高了对村底加热的均匀性， 相应改善了化学气相沉积工艺的均匀性和 村底上形成的外延材料层的均匀性；
进一步优化地， 所述支撑架的正面、 村底的正面与石墨盘的正面齐平， 可以避免村底两侧的石墨盘和支撑架影响村底的正面的气流的分布， 进一步 改善村底正面的气流分布的均匀性；
进一步优化地， 所述石墨盘中具有孔洞， 位于与所述村底的边缘对应的 石墨盘中， 所述孔洞用于减小石墨盘对村底的边缘的热辐射， 使得村底的边 缘与村底的中部受到的热辐射的基本相同， 从而进一步提高村底受热的均匀 性；
进一步优化地， 所述支撑架的与村底接触的表面上形成有多个孔隙， 用 于减小所述支撑架与村底的接触面积， 减少了来自石墨盘的热传导， 进一步 改善了村底受热的均匀性；
进一步优化地， 所述支撑架悬挂于所述 槽两侧的石墨盘上， 所述支撑 架的顶部固定于所述 槽的两侧的石墨盘上， 所述支撑架的底部用于放置村 底，所述支撑架的形状为 Z型圓环， 当村底需要随着石墨盘一起转动的时候， 有利于保证村底在石墨盘中的位置相对稳定。
附图说明
图 1是现有技术的 MOCVD装置的结构示意图；
图 2是翘曲变形的蓝宝石村底与石墨盘的结构示意图； 图 3是翘曲变形的硅村底与石墨盘的结构示意图；
图 4是本发明第一实施例的石墨盘的结构示意图；
图 5是图 4所示的石墨盘的俯视结构示意图；
图 6是本发明第二实施例的石墨盘的结构示意图；
图 7是本发明第三实施例的石墨盘的结构示意图；
图 8是本发明第四实施例的石墨盘的结构示意图；
图 9是本发明第五实施例的石墨盘的结构示意图；
图 10是本发明第六实施例的石墨盘的结构示意图；
图 11是图 9中的支撑架的底部结构示意图；
图 12是本发明第七实施例的石墨盘的结构示意图；
图 13是本发明第八实施例的石墨盘的结构示意图；
图 14是本发明第九实施例的石墨盘的结构示意图；
图 15为翘曲变形的硅村底温度分布曲线。
具体实施方式
现有技术的化学气相沉积工艺的均匀性不高， 外延芯片的良率偏低。 经 过发明人研究发现， 由于村底受热不均匀 （村底的各点有温差）导致化学气
常村底放置于石墨盘中， 两者接触， 石墨盘能够以热传导和热辐射两种方式 对村底进行加热。 当村底翘曲变形后， 村底原本应与石墨盘接触的各点与石 墨盘之间的距离不同， 使得村底受热不均匀。 并且发明人还发现， 基于不同 的材质， 村底在应力的作用下发生的翘曲变形的趋势不同。 虽然不同材质的 村底发生翘曲变形的趋势不同， 但是均会造成村底受热不均匀。
具体地， 请参考图 2所示的翘曲变形的蓝宝石村底与石墨盘的结构示意 图。 石墨盘 12内具有凹槽， 石墨盘 12的正面朝向喷淋头（未图示）， 石墨盘 12的凹槽内放置有村底 121 ,所述村底 121的正面朝向喷淋头。所述村底 121 的材质为蓝宝石， 由于应力作用， 村底 121的背面 （与正面相对的表面）原 本位于同一平面的三点 A点、 B点、 C点形成了圓弧状（圓弧的开口向上）， 而整个村底 121在凹槽内呈碗口上的碗状。 对于 A点和 C点与石墨盘 12直 接接触， 因此 A点和 C点可以以热辐射和热传导两种方式接受来自石墨盘 12的热量， 并且可以把部分热量逐渐向 B点传递， 而 B点悬置于石墨盘 12 上方，只能以热辐射方式接受来自石墨盘 12的热量，这使得村底 121的各点 受热不均匀， 村底 121的温度自边缘向中心降低。
对于材质为硅的村底， 其翘曲变形与蓝宝石村底相反。 请参考图 3所示 的翘曲变形的硅村底与石墨盘的结构示意图， 与图 2相同的结构采用相同的 标号表示。村底 121正面向上放置于石墨盘 12内， 其材质为硅， 由于应力作 用， 所述村底 121的背面原本位于同一平面的三点 A点、 B点和 C点形成了 圓弧状（圓弧的开口向下），但是该圓弧的开口方向与蓝宝石村底的背面的圓 弧的开口方向相反， 整个村底 121呈碗口向下 （倒扣） 的碗状。 村底 121背 面的 C点由于与石墨盘 12直接接触， 其能够同时以热传导和热辐射两种方 式接收来自石墨盘 12的热量， 并且 C点将热量向村底 121的中部传递， 而 对于 B点和 A点只能以热辐射的方式接受来自石墨盘 12的热量， 这使得村 底 121的边缘温度高， 中部温度低， 并且对于发生图 3所述的变形， 村底中 部接受的热传导的热量比图 2中的村底中部接受的热传导的热量小， 更加加 剧了村底 121温度分布的不均匀。
并且无论是蓝宝石村底或硅村底， 由于对村底加热的 "边缘效应"（即村 底边缘的升温速度大于村底中部的升温速度， 使得村底边缘的温度高于村底 中部的温度） 的影响， 这使得现有的方法对村底加热普遍有受热不均匀的问 题。 并且如前所述， 硅村底由于其翘曲变形为为开口向下， 其边缘与中部的 温度不均匀的问题更为严重。 但是利用硅作为化学气相沉积工艺的村底制作 外延芯片是 LED芯片制作领域的技术发展趋势，而硅村底的翘曲变形问题暂 时没有有效的解决办法。 如何在村底（尤其是硅村底）发生翘曲变形的情况 下对其实现较为均勾的加热， 是本发明要解决的技术问题。
为了解决上述问题， 本发明提出一种对新的对村底的加热方法， 所述方 法利用与 槽对应的支撑架， 将所述村底悬置， 使得所述村底与石墨盘不接 触， 利用石墨盘的热辐射对所述村底进行加热。 所述方法适用于 MOCVD工 艺， 当然， 也适用于其他的村底受热变形后以热辐射加热会影响工艺均匀性 的化学气相沉积工艺。
本发明通过改变对村底的加热方式， 使得现有的热传导（为主要加热方 式）和热辐射共同对村底进行加热的方式转变为采用以热辐射对村底进行加 热或以热辐射加热为主对村底进行加热， 提高了村底的各点受热的均匀性。 在村底发生翘曲变形的情况下，虽然村底各点与下方的石墨盘的距离有差异， 但是上述差异对热辐射加热的影响较小， 因此， 采用本发明实施例的方法可 以实现对翘曲变形的村底实现较为均匀的加热。
以 MOCVD设备为例，现有的 MOCVD设备的石墨盘中通常设置有凹槽， 村底放置于凹槽内， 本发明可以通过凹槽内或凹槽两侧的石墨盘上设置支撑 架， 将村底悬置于石墨盘上， 从而使得所述村底与石墨盘不接触， 利用石墨 盘的热辐射对所述村底进行加热。
下面结合实施例对本发明的技术方案进行详细的说明。 为了更好地说明 本发明的技术方案， 请结合图 4所示的本发明第一实施例的石墨盘的结构示 意图。 作为一个实施例， 石墨盘 20的正面向上， 石墨盘 20内具有凹槽， 所 述 槽具有侧壁和底部。所述 槽的侧壁为 槽的沿着垂直于所述石墨盘 20 正面的两侧， 凹槽的底部露出下方的石墨盘 20。 本发明所述的石墨盘的正面 是指石墨盘的朝向喷淋头 （未示出）一侧的表面， 以上定义全文适用， 特此 说明。
本发明所述的支撑架 21位于凹槽的底部， 且该支撑架 21环绕凹槽的底 部一周， 村底 22位于支撑架 21上方。 作为一个实施例， 图 4所示的石墨盘 20中仅有一个 槽， 在其他的实施例中， 石墨盘 20中可以有多个 槽。
所述支撑架 21用于将村底 22悬置， 使得村底 22与石墨盘 20不接触， 从而消除由于村底 22与石墨盘 20接触带来的热传导，使得石墨盘 20对村底 22的加热为热辐射或以热辐射为主。
请结合图 5 , 为图 4所示的石墨盘的俯视示意图。 所述支撑架 21的形状 为环形。 该环形的支撑架 21环绕 槽的侧壁和底部一周， 村底 22位于支撑 架 21上。
请继续参考图 4,作为本发明的一个可选实施例，支撑架 21位于村底 22 的下方。 村底 22的背面与石墨盘 20不接触。 所述支撑架 21的高度 L应满 足， 当村底 22呈现碗状的变形（即村底 22的中部朝向凹槽的底部变形）时， 村底 22的背面仍然与石墨盘 20不接触。 作为本发明的又一可选实施例， 所 述支撑架 21的高度 L与村底 22的厚度 D之和应等于凹槽的深度11。本发明 所述的村底 22的厚度 D是指未发生形变的村底的正面 （朝向喷淋头一侧的 表面）和背面 （与正面相对的表面）之间的距离， 本发明所述的支撑架的高 度 L是指支撑架 21的正面与背面 （与正面相对、 且与喷淋头距离最远的一 侧的表面）的距离。 作为一个实施例， 所述凹槽的深度 H范围为 300微米 ~2 毫米， 所述村底 22的厚度范围为 300微米 ~1.5毫米， 相应地， 所述支撑架 21的高度范围为 290微米 ~1.7毫米。
本实施例中， 虽然村底 22的侧面与凹槽的侧壁仍然有部分接触，通过该 部分接触， 石墨盘 20能够以热传导方式将部分热量传给村底 22, 但是热传 导方式传导的热量有限，对村底 22的受热的均匀性影响不大。在其他的实施 例中， 可以在村底 22的两侧与石墨盘 20之间设置绝热层， 该绝热层的材质 可以为陶瓷。
作为一个实施例， 所述支撑架 21的宽度应尽可能小， 以减小与村底 22 的接触。作为优选的实施例，所述支撑架 21的宽度范围为其上方放置村底的 半径的 1/10~1/20, 以保证能够稳定的将村底 22悬空。
作为一个实施例， 所述支撑架 21的材质为石墨， 其可以与石墨盘 20— 体化加工而成， 也可以单独加工， 然后通过螺丝螺母等机械零件与石墨盘 20 固定在一起或者通过耐热胶与石墨盘 20粘合为一体。
作为本发明的一个的实施例，所述支撑架 21的材质可以为透明材质，这 样保证支撑架 21下方的石墨盘 20的热量可以透过支撑架 21传输至村底 22。 例如所述支撑架 21的材质可以为石英、蓝宝石或者两者的混合。本实施例中， 所述支撑架 21的材质为蓝宝石。 作为本发明的又一实施例， 所述支撑架 21 的材质还可以为绝热材质， 这样可以减少石墨盘 21将热量传递给村底 22, 比如所述支撑架 21的材质可以为陶瓷、 氧化锆或两者的混合。
由于石墨盘 20在工艺过程中可能会旋转运动， 为了保证村底 22在石墨 盘 20中能稳定，所述 槽的侧壁与底部可以有一定的倾斜， 槽的侧壁和底 部形成 V型，目的是使得凹槽的底部的直径大于凹槽的正面的开口处的直径， 从而整个凹槽呈圓台状， 保证村底 22在随石墨盘 20的旋转过程中的位置相 对稳定。
下面请结合图 6所示的本发明第二实施例的石墨盘的结构示意图。 与第 一实施例相同的结构采用相同的标号。 本实施例与前一实施例的区别在于， 石墨盘 20 中具有孔洞， 该孔洞位于村底 22的边缘的凹槽下方的石墨盘 20 内。 所述孔洞用于减小石墨盘 20对村底 22边缘的热辐射。
因为发明人发现， 在对村底 22进行加热时， 由于边缘效应的影响， 村底 22的边缘的温度通常高于村底 22的中部的温度，本发明通过在村底 22的边 缘的石墨盘 20中设置孔洞， 可以减少对村底 22的边缘的热辐射， 从而使得 村底 22的边缘的温度与村底 22的中部的温度一致。 本发明实施例的孔洞位 于村底 22两侧的石墨盘 20中，该孔洞设置在石墨盘 20的正面，也是为了便 于石墨盘 20的加工制作。在其他的实施例中，所述孔洞还可以位于村底边缘 附近的其他位置， 比如该孔洞可以位于村底的边缘下方的石墨盘中， 也可以 位于村底的边缘的两侧的石墨盘中； 该孔洞可以与凹槽相连通， 或者该孔洞 与凹槽之间可以有部分石墨盘隔绝， 具体将在后续的实施例中进行详细的说 明。
下面请参考图 7所示的本发明第三实施例的石墨盘的结构示意图。 与第 一实施例相同的结构采用相同的标号表示。 本实施例与第一实施例的区别在 于，所述支撑架 21悬挂于所述 槽两侧的石墨盘 20上，所述支撑架 21的顶 部固定于所述凹槽的两侧的石墨盘 20上， 所述支撑架 21的底部用于放置村 底 22。
所述支撑架 21为阶梯型。 即， 支撑架 21的顶部与 槽两侧的石墨盘 20 的正面接触，支撑架 21的侧面石墨盘 20接触，所述支撑架 21的底部悬置于 槽上。所述支撑架 21的底部用于放置村底 22,支撑架 21的侧壁将村底 22 的侧面与石墨盘 20隔离，使得村底 22与石墨盘 20完全不接触，这样可以减 小石墨盘 20以热传导方式将热量传输给村底 22, 使得石墨盘 20对村底 22 的加热以热辐射方式为主， 从而进一步改善对村底 22的受热的均匀性。
作为优选的实施例， 所述支撑架 21的正面、 村底 22的正面与石墨盘 20 的正面齐平，这样可以防止支撑架 21和石墨盘 20对村底 22上方的气体带来 影响，提高村底 22上方的气流分布的均勾性。本发明所述的支撑架的正面是 指支撑架的朝向喷淋头 （未示出）一侧的表面， 以上定义适用于全文。
作为本发明的一个实施例，所述石墨盘 20中具有孔洞，该孔洞位于村底
22的边缘的凹槽的底部，所述孔洞用于减小石墨盘 20对村底 22的边缘的热 辐射。 本实施例中， 所述孔洞与凹槽相连通， 可以在利用同一工艺步骤制作， 便于石墨盘 20的加工和制作。
下面请结合图 8所示的本发明第四实施例的石墨盘的结构示意图， 与前 一实施例相同的部件采用相同的标号表示。 本实施例与前一实施例的区别在 于， 槽的侧壁和底部形成 V型， 相应地， 支撑架 21的形状为 Z型， 所述 支撑架 21悬挂于 槽两侧的石墨盘 20上，所述支撑架 21的顶部固定于 槽 的两侧的石墨盘 20上， 所述支撑架 21的底部用于放置村底 22。 采用本实施 例所述的 Z型的支撑架 21可以更好地固定村底 22,防止村底 22随着石墨盘 20转动时被甩出去。 本实施例中， 孔洞位于村底 22的边缘的下方的石墨盘 20中。
下面请参考图 9所示的本发明第五实施例的石墨盘的结构示意图， 与前 一实施例相同的结构采用相同的标号表示。 本实施例与前一实施例的区别在 于， 所述村底 22的正面、 支撑架 21的正面和石墨盘 20的正面齐平， 这样有 利于改善村底 22表面的气体分布的均匀性。
下面请参考图 10所示的本发明第六实施例的石墨盘的结构示意图，与前 一实施例相同的结构采用相同的标号表示。 本实施例与前一实施例的区别在 于， 村底 22的边缘的侧壁和底部的石墨盘 20中均形成有孔洞， 并且在本实 施例中该孔洞与凹槽相连通。 在其他的实施例中， 所述孔洞与凹槽之间还可 以有部分石墨盘 20隔离。 本实施例中， 所述支撑架 21的形状为阶梯型， 该 支撑架 21 的侧壁与凹槽两侧的石墨盘 20不接触， 这样可以防止石墨盘 20 通过支撑架 21的侧壁将热量传导给村底 22, 防止对村底 22的边缘加热过多 造成村底 22的边缘温度高于村底 22的中部的温度，进一步改善村底 22的温 度分布的均匀性。
本实施例中， 所述支撑架 21的底部与石墨盘 20不接触， 也可以防止石 墨盘 20通过支撑架 21将热量传递给村底 22的边缘， 减小村底 22的边缘与 中部的温度差异， 进一步改善村底 22的温度的分布的均匀性。
为了进一步减小石墨盘通过支撑架传导给村底的热量， 改善村底的边缘 和中部的温度分布的均勾性， 作为可选的实施例， 还可以在支撑架的与村底 接触的部分形成孔隙， 这样进一步减小支撑架与村底的接触面积。 具体地， 请参考图 11所示的图 9中的支撑架的底部的结构示意图。 作为一个实施例， 支撑架的顶部 （未图示）放置于石墨盘上， 支撑架的底部 （即用于放置村底 的部分）为双环形结构。 如图， 该支撑架的底部具体包括外环 211、 内环 212 和连接外环 211和内环 212的连接桥 213。 采用所述双环形结构的支撑架与 村底的接触面积少， 减少了石墨盘通过支撑架向村底的热传导的热量传输。
请参考图 12所示本发明第七实施例的石墨盘的结构示意图。与第六实施 例相同的结构采用相同的标号表示。 本实施例与第六实施例的区别在于， 村 底 22正面向上放置于阶梯形的支撑架 21上， 所述村底 22的正面、 支撑架 21的正面和石墨盘 20的正面齐平。 本实施例与第六实施例的区别在于， 孔 洞的形状和位置不同。 本实施例的孔洞位于村底 121的边缘的底部， 与凹槽 底部相连通。 本发明的孔洞的深度自 槽的侧壁下方沿村底 121的径向向村 底 121的中部方向的依次减小， 整个孔洞呈三角状。 采用所述孔洞可以进一 步消除村底边缘的热辐射。
请参考图 15所示翘曲变形的硅村底温度分布曲线。 其中横轴 D表示与 村底的中心的距离 （单位为毫米）， 纵轴 T表示温度（单位为 κ )。 图中并未 定量地沿径向标出村底上的温度， 而是定性地示出了沿径向村底的温度变化 趋势， 虚线左侧为村底中部， 虚线右侧为村底边缘。 其中曲线 1为采用现有 技术的石墨盘对翘曲变形的硅村底加热的模拟结果。 曲线 1表明村底的中部 温度分布比村底的边缘温度分布均勾， 由于边缘效应的影响， 村底的边缘的 温度比村底的中部的温度高， 并且越靠近村底的边缘温度上升越快， 温度分 布的均匀性越差， 村底的边缘和中部的最大温差超过 10Κ。 曲线 2为采用本 实施例的石墨盘对翘曲变形的硅村底加热的模拟结果。 曲线 2的村底中部的 温度分布比村底边缘的温度分布更为均勾， 与曲线 1相比， 村底的边缘的温 度变化较为平緩，村底的边缘和中部的最大温差小于 4K,这说明采用本发明 实施例的石墨盘可以有效改善村底上温度分布的均匀性。
下面请参考图 13所示的第八实施例的石墨盘的结构示意图。与第七实施 例相同的结构采用相同的标号表示。 与前一实施例的区别在于， 支撑架 21 位于 槽的中部， 且所述支撑架 21由多个支撑柱构成。 本实施例中， 所述支 撑柱的数目为 3个， 所述支撑柱呈等边三角形排布， 等边三角形的中心与 槽的中心位于同一垂直线上（该垂直线与凹槽的底部垂直）。采用本实施例的 支撑柱结构将村底悬置于 槽内， 可以进一步减小村底与石墨盘之间的热传 导。
下面请参考图 14所示的本发明第九实施例的石墨盘的结构示意图。与前 一实施例相同的结构采用相同的标号表示。 本实施例与前一实施例的区别在 于， 石墨盘 20内的 槽的侧壁和底部形成 V型， 且村底 22的边缘的下方和 两侧的石墨盘 20内均形成有孔洞， 这样可以进一步减少对村底 22的边缘的 热辐射。
综上， 本发明实施例提供的石墨盘的凹槽具有与之对应的支撑架， 利用 该支撑架将村底悬置， 使得村底与石墨盘不接触， 在进行化学气相沉积工艺 时， 石墨盘作为村底的热源 （石墨盘在加热单元的加热下升温， 能够以热辐 射和热传导方式提供热量）， 由于村底与石墨盘不接触， 因此利用本发明所述 的石墨盘能够实现对村底的加热以热辐射方式为主， 而现有技术将村底直接 放置在石墨盘的 槽中（即村底与石墨盘直接接触）， 因此现有技术对村底的 加热以热传导为主， 当村底发生翘曲变形时， 现有技术容易造成村底的各点 受热不均匀， 导致村底上形成的外延材料层不均匀， 由于本发明利用热辐射 方式加热， 消除了现有技术利用热传导加热给村底上各点的加热的不均匀造 成的影响， 提高了对村底加热的均匀性， 相应改善了化学气相沉积工艺的均 勾性和村底上形成的外延材料层的均匀性；
进一步优化地， 所述支撑架的正面、 村底的正面与石墨盘的正面齐平， 可以避免村底两侧的石墨盘和支撑架影响村底的正面的气流的分布， 进一步 改善村底正面的气流分布的均匀性；
进一步优化地， 所述石墨盘中具有孔洞， 位于与所述村底的边缘对应的 石墨盘中， 所述孔洞用于减小石墨盘对村底的边缘的热辐射， 使得村底的边 缘与村底的中部受到的热辐射的基本相同， 从而进一步提高村底受热的均匀 性；
进一步优化地， 所述支撑架的与村底接触的表面上形成有多个孔隙， 用 于减小所述支撑架与村底的接触面积， 减少了来自石墨盘的热传导， 进一步 改善了村底受热的均匀性；
进一步优化地， 所述支撑架悬挂于所述 槽两侧的石墨盘上， 所述支撑 架的顶部固定于所述 槽的两侧的石墨盘上， 所述支撑架的底部用于放置村 底，所述支撑架的形状为 Z型圓环， 当村底需要随着石墨盘一起转动的时候， 有利于保证村底在石墨盘中的位置相对稳定。
虽然本发明己以较佳实施例披露如上， 但本发明并非限定于此。 任何本 领域技术人员， 在不脱离本发明的精神和范围内， 均可作各种更动与修改， 因此本发明的保护范围应当以权利要求所限定的范围为准。

Claims

权 利 要 求
1. 一种化学气相沉积工艺的石墨盘，具有用于放置村底的凹槽，其特征在于， 所述 槽所在的位置具有与之对应的支撑架， 所述支撑架用于将村底悬 置， 使得村底与石墨盘不接触。
2. 如权利要求 1所述的石墨盘， 其特征在于， 所述支撑架的形状为环形， 所 述支撑架环绕所述凹槽的底部一周， 所述支撑架位于村底的下方。
3. 如权利要求 1所述的石墨盘， 其特征在于， 所述 槽的侧壁与底部构成 V 型。
4. 如权利要求 2所述的石墨盘， 其特征在于， 所述支撑架与其中放置的村底 的厚度之和等于所述凹槽的深度。
5. 如权利要求 1所述的石墨盘， 其特征在于， 所述支撑架悬挂于所述凹槽两 侧的石墨盘上， 所述支撑架的顶部固定于所述 槽的两侧的石墨盘上， 所 述支撑架的底部用于放置村底。
6. 如权利要求 5所述的石墨盘， 其特征在于， 所述支撑架的形状为 Z型或阶 梯型。
7. 如权利要求 5所述的石墨盘， 其特征在于， 所述支撑架的正面、 村底的正 面与石墨盘的正面齐平。
8. 如权利要求 1所述的石墨盘， 其特征在于， 所述石墨盘中具有孔洞， 位于 村底的边缘对应石墨盘中，所述孔洞用于减小石墨盘对村底的边缘的热辐 射。
9. 如权利要求 1所述的石墨盘， 其特征在于， 所述支撑架的材质为透明材质 或绝热材质。
10.如权利要求 9所述的石墨盘， 其特征在于， 所述透明材质为石英、 蓝宝石 中的一种或其混合。
11.如权利要求 9所述的石墨盘， 其特征在于， 所述绝热材质为陶瓷、 氧化锆 或两者的混合。
12.如权利要求 1所述的石墨盘， 其特征在于， 所述支撑架的与村底接触的表 面上形成有多个孔隙， 用于减小所述支撑架与村底的接触面积。
13.如权利要求 12 所述的石墨盘， 其特征在于， 所述支撑架的用于放置村底 的部分为双环形结构或多个支撑柱。
14.如权利要求 1所述的石墨盘， 其特征在于， 所述凹槽的深度范围为 300微 米~2毫米， 所述支撑架的高度范围为 290微米 ~1.7毫米。
15.—种化学气相沉积工艺过程中对村底的加热方法， 其特征在于， 利用与凹 槽对应的支撑架， 将所述村底悬置， 使得所述村底与石墨盘不接触， 利用 石墨盘的热辐射对所述村底进行加热。
16.—种化学气相沉积设备的反应腔室， 其特征在于， 包括如权利要求 1所述 的石墨盘。
PCT/CN2013/071446 2012-02-22 2013-02-06 石墨盘、具有上述石墨盘的反应腔室和对衬底的加热方法 WO2013123859A1 (zh)

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