WO2013122165A1 - Particules de composé, procédé pour la fabrication de particules de composé, procédé pour la fabrication d'une couche semi-conductrice et procédé pour la fabrication d'un dispositif de conversion photoélectrique - Google Patents

Particules de composé, procédé pour la fabrication de particules de composé, procédé pour la fabrication d'une couche semi-conductrice et procédé pour la fabrication d'un dispositif de conversion photoélectrique Download PDF

Info

Publication number
WO2013122165A1
WO2013122165A1 PCT/JP2013/053566 JP2013053566W WO2013122165A1 WO 2013122165 A1 WO2013122165 A1 WO 2013122165A1 JP 2013053566 W JP2013053566 W JP 2013053566W WO 2013122165 A1 WO2013122165 A1 WO 2013122165A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layer
compound particles
photoelectric conversion
compound
group
Prior art date
Application number
PCT/JP2013/053566
Other languages
English (en)
Japanese (ja)
Inventor
一輝 山田
誠一郎 稲井
田中　勇
康太郎 谷川
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to JP2013558737A priority Critical patent/JP5687367B2/ja
Publication of WO2013122165A1 publication Critical patent/WO2013122165A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to compound particles for producing a semiconductor layer containing a group I-III-VI compound, a method for producing the same, a method for producing a semiconductor layer, and a method for producing a photoelectric conversion layer.
  • Some solar cells use a photoelectric conversion device including a semiconductor layer containing a chalcopyrite-based I-III-VI group compound.
  • I-III-VI group compounds include CIS and CIGS.
  • Japanese Patent Application Laid-Open No. 2008-192542 discloses that a coating layer is formed using a solution containing fine particles of an I-III-VI group compound, and the semiconductor layer is formed by sintering the coating layer. It is described to form.
  • An object of the present invention is to increase the photoelectric conversion efficiency of a semiconductor layer and a photoelectric conversion device using the semiconductor layer.
  • a compound particle according to an embodiment of the present invention is a compound particle containing a group IB element, an indium element, a gallium element, and a chalcogen element, and the atoms of the gallium element with respect to the total atomic concentration of the indium element and the gallium element The concentration ratio is higher at the surface than at the center.
  • a raw material liquid containing a group IB element, an indium element, and a chalcogen element is heated while being in contact with gallium metal, whereby the indium element and the gallium element are heated.
  • a method for producing a semiconductor layer according to an embodiment of the present invention includes a step of forming a film using the above compound particles, and a step of heating the film to form a semiconductor layer containing an I-III-VI group compound. It comprises.
  • a method for manufacturing a photoelectric conversion device includes a step of forming a first semiconductor layer containing a group I-III-VI compound using the above-described method for manufacturing a semiconductor layer, Forming a second semiconductor layer having a conductivity type different from that of the first semiconductor layer so as to be electrically connected to the semiconductor layer.
  • the photoelectric conversion efficiency of the semiconductor layer and the photoelectric conversion device can be increased.
  • FIG. 1 It is a perspective view which shows an example of a photoelectric conversion apparatus. It is sectional drawing of the photoelectric conversion apparatus of FIG. It is a TEM photograph of the section of compound particles. It is a graph which shows the content ratio of Ga element in a compound particle. It is a graph which shows the content rate of In element in a compound particle.
  • the compound particles are used as a raw material for forming a semiconductor layer containing a I-III-VI group compound.
  • the compound particles are formed into a film shape, and when heated, the compound particles react with each other to form a semiconductor layer.
  • An I-III-VI group compound is a group consisting of a group IB element (also referred to as a group 11 element), a group III-B element (also referred to as a group 13 element), and a group VI-B element (also referred to as a group 16 element). It is a compound, for example, Cu (In, Ga) Se 2 (also referred to as CIGS), Cu (In, Ga) (Se, S) 2 (also referred to as CIGSS, etc.) Cu (In, Ga) Se 2 refers to a compound mainly composed of Cu, In, Ga, and Se, and Cu (In, Ga) (Se, S) 2 refers to Cu, In, Ga, Se, and S. A compound containing as a main component.
  • the compound particles contain a group IB element, an indium (In) element, a gallium (Ga) element, and a chalcogen element.
  • the chalcogen element refers to a sulfur (S) element, a selenium (Se) element, and a tellurium (Te) element among VI-B group elements.
  • the compound particle has a ratio of atomic concentration of Ga element to total atomic concentration of In element and Ga element (hereinafter, a ratio of atomic concentration of Ga element to total atomic concentration of In element and Ga element is referred to as Ga ratio). However, it is higher at the surface portion than at the center portion of the compound particles.
  • the Ga ratio in the surface portion of the compound particles is 1.3 to 2 times the Ga ratio in the central portion. .5 times may be sufficient.
  • the atomic concentration measurement of Ga element and In element of compound particles can be performed, for example, by the following method. First, a plurality of compound particles are mixed with a thermosetting resin such as an epoxy resin or an acrylic resin. Next, this mixture is heated and thermally cured. And this thermosetting body is cut
  • TEM transmission electron microscope
  • the average particle size of the compound particles may be 10 nm to 200 nm.
  • the average particle diameter of the compound particles can be measured using, for example, a scanning electron microscope (SEM). Specifically, compound particles are fixed on a sample stage with an adhesive tape or the like, and the appearance is observed with an SEM. Then, the average particle size may be obtained by measuring the particle size of the plurality of compound particles from the obtained SEM image.
  • SEM scanning electron microscope
  • the above compound particles can be produced, for example, as follows. First, a raw material solution in which an IB group element such as Cu, an In element, and a chalcogen element are dissolved is prepared. Then, by heating the raw material liquid and Ga metal in contact with each other, compound particles having a Ga ratio higher in the surface portion than in the central portion are generated. Note that the raw material liquid and the Ga metal are in contact with each other means that the Ga metal is not dissolved in the raw material liquid and exists in a metal state.
  • the Ga metal in contact with the raw material liquid may be a liquid metal.
  • the IB group element and the In element are easily dissolved in the raw material liquid, and the Ga element is difficult to dissolve, so that the dissolved IB group element and the In element react with the chalcogen element relatively quickly, Thereafter, the dissolved Ga element gradually reacts with the chalcogen element. As a result, compound particles having a higher Ga ratio in the surface portion than in the central portion are generated.
  • the solvent for the raw material liquid for example, an organic solvent such as aniline or pyridine can be used.
  • the IB group element and the In element contained in the raw material liquid are dissolved in the above solvent in a state of, for example, a complex.
  • the chalcogen element contained in the raw material liquid is dissolved in the solvent in the state of, for example, a chalcogen element-containing organic compound.
  • the chalcogen element-containing organic compound is an organic compound containing a chalcogen element and is an organic compound having a covalent bond between a carbon element and a chalcogen element.
  • the chalcogen element-containing organic compound examples include thiol, sulfide, disulfide, selenol, selenide, diselenide, tellurol, telluride, and ditelluride.
  • the group IB element contained in the raw material liquid may be a complex in which a chalcogen element-containing organic compound is bound as a ligand.
  • the In element may be a complex in which a chalcogen element-containing organic compound is bound as a ligand.
  • the Ga metal dissolves gradually while bonding with the ligand in the raw material liquid to form a Ga complex. To do. Then, the dissolved Ga complex reacts with other metal elements and chalcogen elements in the raw material liquid, and compound particles containing a group IB element, an In element, a Ga element, and a chalcogen element are generated.
  • the ligand forming such a Ga complex may be one in which the ligand bonded to the IB group element or In element is free from the IB group element or In element. It may be added separately to the raw material liquid. From the viewpoint of appropriately increasing the chalcogenization reaction of Ga element, a chalcogen element-containing organic compound may be added to the raw material liquid as a ligand for forming the Ga complex.
  • the difference between the Ga ratio and the Ga ratio in the surface portion can be changed. That is, the lower the temperature increase rate of the mixture, the smaller the Ga ratio in the central part of the compound particles, and the larger the Ga ratio difference between the central part and the surface part tends to be.
  • compound particles having a Ga ratio higher in the surface portion than in the central portion are generated in the raw material liquid.
  • the compound particles may be removed by centrifugation or the like and washed. Thereby, impurities can be removed satisfactorily.
  • the raw material solution in which the IB group element and the In element are dissolved can be prepared by dissolving the IB group element complex and the In element complex in a solvent, but is not limited thereto.
  • a solution in which a ligand such as a chalcogen element-containing organic compound is dissolved in a solvent is prepared, and a Group IB metal and an In metal are added to the solution and heated.
  • the raw material solution may be prepared by dissolving it as a complex compound.
  • a film is formed using the compound particles.
  • compound particles are mixed with a solvent or an additive (such as an additive such as a surfactant or a binder) to form a liquid, and this liquid is spin coater, screen printing, dipping,
  • a method of forming a film with a spray or a die coater there are a method of forming a film by spraying powdery compound particles on a support together with a gas, and a method of forming a film by press molding powdery compound particles.
  • this film is heated to form a semiconductor layer containing an I-III-VI group compound.
  • the film is heated in an inert gas atmosphere such as nitrogen gas or a reducing gas atmosphere such as hydrogen gas at a temperature of 350 to 600 ° C., for example.
  • an inert gas atmosphere such as nitrogen gas or a reducing gas atmosphere such as hydrogen gas at a temperature of 350 to 600 ° C., for example.
  • compound particles react with each other to generate a semiconductor layer having a polycrystalline structure.
  • a chalcogen element may be included in the atmosphere during heating of the film, for example, as sulfur vapor, hydrogen sulfide, selenium vapor, hydrogen selenide, tellurium vapor, or hydrogen telluride.
  • FIG. 1 is a perspective view illustrating a photoelectric conversion device
  • FIG. 2 is a cross-sectional view of the photoelectric conversion device.
  • the photoelectric conversion device 11 a plurality of photoelectric conversion cells 10 are arranged on the substrate 1 and are electrically connected to each other.
  • FIG. 1 only two photoelectric conversion cells 10 are shown for convenience of illustration. However, in an actual photoelectric conversion device 11, a large number of photoelectric conversion cells are arranged in the horizontal direction of the drawing or in a direction perpendicular thereto.
  • the cells 10 may be arranged in a plane (two-dimensionally).
  • a plurality of lower electrode layers 2 are arranged in a plane on a substrate 1.
  • the plurality of lower electrode layers 2 include lower electrode layers 2a to 2c arranged at intervals in one direction.
  • a first semiconductor layer 3 is provided from the lower electrode layer 2a through the substrate 1 to the lower electrode layer 2b.
  • a second semiconductor layer 4 having a conductivity type different from that of the first semiconductor layer 3 is provided on the first semiconductor layer 3.
  • the connection conductor 7 is provided along the surface (side surface) of the first semiconductor layer 3 or through the first semiconductor layer 3. The connection conductor 7 electrically connects the second semiconductor layer 4 and the lower electrode layer 2b.
  • the lower electrode layer 2, the first semiconductor layer 3, and the second semiconductor layer 4 constitute one photoelectric conversion cell 10, and adjacent photoelectric conversion cells 10 are connected in series via the connection conductor 7.
  • the photoelectric conversion device 11 With high output is obtained.
  • the photoelectric conversion apparatus 11 in this embodiment assumes what enters light from the 2nd semiconductor layer 4 side, it is not limited to this, Light enters from the board
  • the substrate 1 is for supporting the photoelectric conversion cell 10.
  • Examples of the material used for the substrate 1 include glass, ceramics, resin, and metal.
  • the lower electrode layer 2 (lower electrode layers 2a, 2b, 2c) is a conductor such as Mo, Al, Ti, or Au provided on the substrate 1.
  • the lower electrode layer 2 is formed to a thickness of about 0.2 ⁇ m to 1 ⁇ m using a known thin film forming method such as sputtering or vapor deposition.
  • the first semiconductor layer 3 is a semiconductor layer that functions as a light absorption layer, and has a thickness of about 1 ⁇ m to 3 ⁇ m, for example.
  • the first semiconductor layer 3 mainly contains a group I-III-VI compound and can be produced using the above compound particles.
  • the second semiconductor layer 4 is a semiconductor layer having a conductivity type different from that of the first semiconductor layer 3.
  • a photoelectric conversion layer from which charges can be favorably extracted is formed.
  • the first semiconductor layer 3 is p-type
  • the second semiconductor layer 4 is n-type.
  • the first semiconductor layer 3 may be n-type and the second semiconductor layer 4 may be p-type.
  • the second semiconductor layer 4 examples include CdS, ZnS, ZnO, Zn (OH, S), In 2 S 3 , In 2 Se 3 , In (OH, S), (Zn, In) (Se, OH). ), And (Zn, Mg) O.
  • the second semiconductor layer 4 is formed with a thickness of 10 to 200 nm by, for example, a chemical bath deposition (CBD) method or the like.
  • Zn (OH, S) refers to a mixed crystal compound containing Zn as a hydroxide and sulfide.
  • In (OH, S) refers to a mixed crystal compound containing In as a hydroxide and sulfide.
  • (Zn, In) (Se, OH) refers to a mixed crystal compound containing Zn and In as selenides and hydroxides.
  • (Zn, Mg) O refers to a compound containing Zn and Mg as oxides.
  • an upper electrode layer 5 may be further provided on the second semiconductor layer 4.
  • the upper electrode layer 5 is a layer having a lower resistivity than the second semiconductor layer 4, and it is possible to take out charges generated in the first semiconductor layer 3 and the second semiconductor layer 4 satisfactorily.
  • the resistivity of the upper electrode layer 5 may be less than 1 ⁇ ⁇ cm and the sheet resistance may be 50 ⁇ / ⁇ or less.
  • the upper electrode layer 5 is a 0.05 to 3 ⁇ m transparent conductive film made of, for example, ITO or ZnO.
  • the upper electrode layer 5 may be composed of a semiconductor having the same conductivity type as the second semiconductor layer 4.
  • the upper electrode layer 5 can be formed by sputtering, vapor deposition, chemical vapor deposition (CVD), or the like.
  • a collecting electrode 8 may be further formed on the upper electrode layer 5.
  • the current collecting electrode 8 is for taking out charges generated in the first semiconductor layer 3 and the second semiconductor layer 4 more satisfactorily.
  • the collector electrode 8 is formed in a linear shape from one end of the photoelectric conversion cell 10 to the connection conductor 7.
  • the current generated in the first semiconductor layer 3 and the fourth semiconductor layer 4 is collected to the current collecting electrode 8 via the upper electrode layer 5, and to the adjacent photoelectric conversion cell 10 via the connection conductor 7. It is energized well.
  • the collecting electrode 8 may have a width of 50 to 400 ⁇ m from the viewpoint of increasing the light transmittance to the first semiconductor layer 3 and having good conductivity.
  • the current collecting electrode 8 may have a plurality of branched portions.
  • the current collecting electrode 8 is formed, for example, by printing a metal paste in which a metal powder such as Ag is dispersed in a resin binder or the like in a pattern and curing it.
  • connection conductor 7 is a conductor provided in a groove that penetrates the first semiconductor layer 3, the second semiconductor layer 4, and the upper electrode layer 5.
  • the connection conductor 7 can be made of metal, conductive paste, or the like.
  • the collector electrode 8 is extended to form the connection conductor 7, but the present invention is not limited to this.
  • the upper electrode layer 5 may be stretched.
  • the lower electrode layer 2 made of Mo or the like is formed in a desired pattern on the main surface of the substrate 1 made of glass or the like using a sputtering method or the like.
  • the first semiconductor layer 3 is formed on the lower electrode layer 2 by using the semiconductor layer manufacturing method described above.
  • the second semiconductor layer 4 and the upper electrode layer 5 are sequentially formed on the first semiconductor layer 3 by a CBD method, a sputtering method, or the like. Then, the first semiconductor layer 3, the second semiconductor layer 4, and the upper electrode layer 5 are processed by mechanical scribing or the like to form a groove for the connection conductor 7.
  • the first semiconductor layer 3 to the collector electrode 8 are removed by mechanical scribing at a position shifted from the connection conductor 7 and divided into a plurality of photoelectric conversion cells 10, as shown in FIGS. 1 and 2.
  • the photoelectric conversion device 11 is completed.
  • the compound particles were evaluated as follows.
  • CIGS was used as the semiconductor layer.
  • evaluation powder powdery compound particles
  • the evaluation powder was mixed with a thermosetting acrylic resin, and the acrylic resin was thermoset.
  • the thermosetting acrylic resin was cut, and this cut portion was observed with a TEM to identify a portion where the cross section of the evaluation powder appeared.
  • the result of this TEM observation is shown in FIG.
  • EDS analysis was performed at five points a to e of the cross section of the evaluation powder shown in FIG.
  • the powder for evaluation contained Cu element, In element, Ga element and Se element.
  • the Ga ratio and In ratio in each point of the cross section of the powder for evaluation were as shown in FIGS.
  • the evaluation powder was observed by SEM, and the average particle size of the evaluation powder was measured from the obtained SEM image. From this result, it was found that the average particle size of the evaluation powder was 100 nm.
  • compound particles as comparative examples were produced as follows. First, 500 mmol of aniline and 250 mmol of diphenyl diselenide were mixed to prepare a mixed solvent. Next, this mixed solvent was divided into three equal parts, and 65 mmol of metal In was mixed into the first mixed solvent and dissolved at 70 ° C. The second mixed solvent was mixed with 35 mmol of metal Ga and dissolved at 70 ° C. The third mixed solvent was mixed with 100 mmol of metal Cu and dissolved at 70 ° C. And each mixed solvent which melt
  • powdered compound particles hereinafter also referred to as comparative powder
  • the comparative powder When this comparative powder was subjected to EDS analysis by TEM observation as in the above, it was confirmed that the comparative powder contained Cu element, In element, Ga element and Se element. The ratio of In and the ratio of In element were not different between the particle surface portion and the central portion. The average particle size of the comparative powder was 100 nm.
  • ⁇ Production of photoelectric conversion device> The evaluation particles and the comparative particles prepared as described above were each dispersed in aniline to prepare a dispersion. Next, a coating film was formed on the lower electrode layer made of Mo of the soda lime glass substrate by using each of these dispersions by a doctor blade method. The coating film was formed by applying each dispersion on the lower electrode layer using nitrogen gas as a carrier gas in a glove box. After coating, the sample was dried for 5 minutes while being heated to 110 ° C. on a hot plate to form a film.
  • the film was heat-treated in a hydrogen gas atmosphere.
  • the heat treatment was performed by rapidly heating the film to 525 ° C. in 5 minutes and holding it at 525 ° C. for 1 hour, and then naturally cooling to obtain a first semiconductor layer having a thickness of 1.5 ⁇ m. From the X-ray diffraction result of the first semiconductor layer, it was confirmed that the obtained first semiconductor layer was CIGS when both the evaluation powder and the comparative powder were used.
  • cadmium acetate and thiourea were dissolved in aqueous ammonia, and the sample was immersed in the solution to form a second semiconductor layer containing CdS having a thickness of 0.05 ⁇ m on each first semiconductor layer. Further, an Al-doped zinc oxide film (upper electrode layer 5) was formed on the second semiconductor layer by a sputtering method to produce a photoelectric conversion device.
  • the photoelectric conversion efficiency of the photoelectric conversion device manufactured using the comparative powder was 7.4%, whereas the photoelectric conversion device manufactured using the evaluation powder was used. It was found that the photoelectric conversion efficiency of the device was 11.5%, which was superior to that when the comparative powder was used.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Le but de la présente invention est d'augmenter le rendement de conversion photoélectrique d'une couche semi-conductrice et le rendement de conversion photoélectrique d'un dispositif de conversion photoélectrique à l'aide de la couche semi-conductrice. Des particules de composé d'un mode de réalisation de la présente invention contiennent un élément du groupe I-B, un élément indium, un élément gallium, et un élément chalcogène. Le rapport de la concentration atomique de l'élément gallium par rapport à la concentration atomique totale de l'élément indium et de l'élément gallium est plus grand dans la partie de surface que dans la partie centrale.
PCT/JP2013/053566 2012-02-16 2013-02-14 Particules de composé, procédé pour la fabrication de particules de composé, procédé pour la fabrication d'une couche semi-conductrice et procédé pour la fabrication d'un dispositif de conversion photoélectrique WO2013122165A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013558737A JP5687367B2 (ja) 2012-02-16 2013-02-14 化合物粒子、化合物粒子の製造方法、半導体層の製造方法および光電変換装置の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-031517 2012-02-16
JP2012031517 2012-02-16

Publications (1)

Publication Number Publication Date
WO2013122165A1 true WO2013122165A1 (fr) 2013-08-22

Family

ID=48984274

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/053566 WO2013122165A1 (fr) 2012-02-16 2013-02-14 Particules de composé, procédé pour la fabrication de particules de composé, procédé pour la fabrication d'une couche semi-conductrice et procédé pour la fabrication d'un dispositif de conversion photoélectrique

Country Status (2)

Country Link
JP (1) JP5687367B2 (fr)
WO (1) WO2013122165A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1079525A (ja) * 1996-09-04 1998-03-24 Matsushita Electric Ind Co Ltd 化合物半導体及びそれを用いた薄膜太陽電池
JP2007521221A (ja) * 2003-12-22 2007-08-02 ショイテン グラースグループ Ｃｕ（Ｉｎ，Ｇａ）Ｓｅ２単結晶パウダーの製造方法、およびそのパウダーを含む単粒子膜太陽電池
JP2008192542A (ja) * 2007-02-07 2008-08-21 Nippon Oil Corp カルコパイライトナノ粒子の製造方法及び光電変換素子
JP2010132521A (ja) * 2008-11-10 2010-06-17 Dowa Holdings Co Ltd カルコゲン化合物粉
JP2010526007A (ja) * 2007-11-14 2010-07-29 成均館大学校 産学協力団 Ｉ−ｉｉｉ−ｖｉ２ナノ粒子の製造方法及び多結晶光吸収層薄膜の製造方法
JP2012012229A (ja) * 2010-06-29 2012-01-19 Kobelco Kaken:Kk Ｃｕ、Ｉｎ、ＧａおよびＳｅの元素を含有する粉末、焼結体およびスパッタリングターゲット、並びに上記粉末の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1079525A (ja) * 1996-09-04 1998-03-24 Matsushita Electric Ind Co Ltd 化合物半導体及びそれを用いた薄膜太陽電池
JP2007521221A (ja) * 2003-12-22 2007-08-02 ショイテン グラースグループ Ｃｕ（Ｉｎ，Ｇａ）Ｓｅ２単結晶パウダーの製造方法、およびそのパウダーを含む単粒子膜太陽電池
JP2008192542A (ja) * 2007-02-07 2008-08-21 Nippon Oil Corp カルコパイライトナノ粒子の製造方法及び光電変換素子
JP2010526007A (ja) * 2007-11-14 2010-07-29 成均館大学校 産学協力団 Ｉ−ｉｉｉ−ｖｉ２ナノ粒子の製造方法及び多結晶光吸収層薄膜の製造方法
JP2010132521A (ja) * 2008-11-10 2010-06-17 Dowa Holdings Co Ltd カルコゲン化合物粉
JP2012012229A (ja) * 2010-06-29 2012-01-19 Kobelco Kaken:Kk Ｃｕ、Ｉｎ、ＧａおよびＳｅの元素を含有する粉末、焼結体およびスパッタリングターゲット、並びに上記粉末の製造方法

Also Published As

Publication number Publication date
JP5687367B2 (ja) 2015-03-18
JPWO2013122165A1 (ja) 2015-05-18

Similar Documents

Publication Publication Date Title
WO2011013657A1 (fr) Procédé de fabrication d'un semi-conducteur composé, procédé de fabrication d'un dispositif de conversion photoélectrique et solution pour réalisation d'un semi-conducteur
JP5261581B2 (ja) 半導体層の製造方法、光電変換装置の製造方法および半導体層形成用溶液
JP5430748B2 (ja) 光電変換装置、および光電変換装置の製造方法
JP5495925B2 (ja) 半導体の製造方法および光電変換装置の製造方法
WO2011074645A1 (fr) Procédé pour la production de couche semi-conductrice, procédé pour la production de convertisseur photoélectrique, et solution pour former une couche semi-conductrice
WO2012147427A1 (fr) Convertisseur photovoltaïque
JP5687367B2 (ja) 化合物粒子、化合物粒子の製造方法、半導体層の製造方法および光電変換装置の製造方法
JP5570650B2 (ja) 半導体層の製造方法および光電変換装置の製造方法
JP5918042B2 (ja) 光電変換装置の製造方法
JP5566335B2 (ja) 光電変換装置の製造方法
JP2012114251A (ja) 光電変換装置の製造方法
JP2013224239A (ja) 半導体層形成用粒子、半導体層の製造方法および光電変換装置の製造方法
JP5618942B2 (ja) 光電変換装置の製造方法
JP2012033728A (ja) 金属カルコゲナイド粒子の製造方法および光電変換装置の製造方法
WO2013054623A1 (fr) Procédé de fabrication d'une couche de semi-conducteur, procédé de fabrication d'un dispositif de conversion photoélectrique et matière première de formation de semi-conducteur
JP5638470B2 (ja) 半導体層の製造方法および光電変換装置の製造方法
JP5791802B2 (ja) 光電変換装置の製造方法
JP5813120B2 (ja) 光電変換装置の製造方法
JP2012049358A (ja) 金属カルコゲナイド粒子の製造方法および光電変換装置の製造方法
JP5683377B2 (ja) 半導体層の製造方法および光電変換装置の製造方法
JP2011249560A (ja) 半導体層の製造方法および光電変換装置の製造方法
JP2012160514A (ja) 金属カルコゲナイド層の製造方法および光電変換装置の製造方法
JP2012169485A (ja) 半導体形成用化合物の製造方法、半導体層の製造方法および光電変換装置の製造方法
JP2013012722A (ja) 光電変換装置の製造方法
JP2011138837A (ja) 半導体層の製造方法および光電変換装置の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13749464

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2013558737

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13749464

Country of ref document: EP

Kind code of ref document: A1