WO2013115270A1 - 半導体センサー・デバイスおよびその製造方法 - Google Patents

半導体センサー・デバイスおよびその製造方法 Download PDF

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Publication number
WO2013115270A1
WO2013115270A1 PCT/JP2013/052087 JP2013052087W WO2013115270A1 WO 2013115270 A1 WO2013115270 A1 WO 2013115270A1 JP 2013052087 W JP2013052087 W JP 2013052087W WO 2013115270 A1 WO2013115270 A1 WO 2013115270A1
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WIPO (PCT)
Prior art keywords
substrate
groove
recess
pressure sensor
side wall
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PCT/JP2013/052087
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English (en)
French (fr)
Japanese (ja)
Inventor
俊 保坂
Original Assignee
Hosaka Takashi
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Publication date
Application filed by Hosaka Takashi filed Critical Hosaka Takashi
Publication of WO2013115270A1 publication Critical patent/WO2013115270A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0005—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using variations in capacitance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14201—Structure of print heads with piezoelectric elements
    • B41J2/14209—Structure of print heads with piezoelectric elements of finger type, chamber walls consisting integrally of piezoelectric material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0002—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using variations in ohmic resistance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2002/14491—Electrical connection
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/006—Interconnection of transducer parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Definitions

  • the present invention relates to a structure of a semiconductor pressure sensor and a manufacturing method thereof, and further to various small sensors or various small devices such as an acceleration sensor, an acoustic transducer, and a pump device, and extremely reduces the size of the sensor and various devices.
  • various sensors and various devices such as a pressure sensor that is cheaper and has higher performance than conventional ones are provided.
  • Patent Document 1 discloses a structure in which a recess is formed in a substrate and the recess is covered with a diaphragm. This semiconductor pressure sensor detects pressure by utilizing the fact that the diaphragm is deformed by the external pressure and the capacitance inside the recess changes.
  • FIG. 36 is a diagram schematically showing a conventional pressure sensor.
  • a space 502 formed on the surface of the chip 501 in the semiconductor substrate is covered with a lid 503.
  • the space 502 is in a vacuum state (or a low pressure state of 1 atm or less).
  • a lower electrode 504 formed on the substrate 501 and an upper electrode 505 formed on the lid 503 face each other.
  • FIG. 36 (b) is a view as seen in a plan view. Lid 503 is omitted.
  • the planar size of the space is a rectangle of horizontal x and vertical y.
  • 507 denotes a pressure sensor which is defined by x and y.
  • ⁇ is a relative dielectric constant
  • ⁇ 0 is a vacuum dielectric constant
  • S is an area in the plane direction of the semiconductor substrate
  • S x * y. If space is air ⁇ is about 1.
  • the lid When pressure P is received from the outside, the lid is deformed and bent downward, and z changes. Due to this change in z, the capacitance C changes, and the pressure can be calculated from the amount of change. Since the amount of change it is easily detected larger, the area S, the better larger. That is, in order to accurately measure the pressure, it is necessary to increase the area, so it is necessary to increase the planar size of this space, that is, x and y. Therefore, the chip size is increased. Since the wafer area is limited, the number of chips (pressure sensor chips) in the wafer is reduced. As a result, the price of the pressure sensor chip also becomes high.
  • a plurality of deep grooves or through grooves are formed in the thickness direction of a planar substrate (for example, a disk shape or a rectangular plate shape), and a side wall sandwiched between adjacent through grooves is deformed by a pressure difference between the two sides.
  • the present invention relates to a capacitance type pressure sensor that utilizes the fact that the capacitance changes by doing so. Specifically, the following measures are taken.
  • the present invention has at least two groove (penetrating groove) spaces that open on only one surface of the upper surface and the lower surface or penetrate both surfaces (for example, have a thickness of 2.0 mm or less).
  • a capacitive pressure sensor comprising an insulating substrate (second surface insulating substrate) attached to (two surfaces) (for example, having a thickness of 1.0 mm or less),
  • One electrode first side wall capacitor electrode that separates two adjacent through grooves (first through groove and second through groove) in the lateral direction (substantially perpendicular to the thickness direction of the conductive substrate).
  • the first side wall capacitor electrode is opposed to one of the adjacent through grooves (first through groove), and the other side wall of the conductor substrate that is not electrically connected to the first side wall capacitor electrode is opposed to the other.
  • An electrode (second sidewall capacitor electrode), and a first through groove space between the first sidewall capacitor electrode and the second sidewall capacitor electrode is defined as a capacitance space, and the first through groove serving as the capacitance space is formed.
  • the first side wall electrode Due to the pressure difference between the pressure of the space and the pressure of the space of the other through groove (second through groove) sandwiching the first side wall capacitive electrode, the first side wall electrode is displaced, so that the first through groove space
  • the pressure is detected using a change in capacitance
  • the first side wall capacitor electrode has an upper surface attached to the first surface insulator substrate and / or a lower surface thereof is a second surface insulator.
  • Adhering to the substrate and / or the second sidewall capacitance electrode Upper surface attached to the first surface insulating substrate, and / or that the lower surface is adhered to the second surface insulating substrate, and wherein a capacitance-type pressure sensor.
  • the present invention has a through-groove (third through-groove) facing the first through-groove across the second side wall capacitor electrode, and the pressure of the third through-groove and the pressure of the first through-groove
  • the electrostatic pressure according to (1) wherein the pressure is detected by using a change in capacitance of the first through groove space due to displacement of the second side wall capacitive electrode due to a pressure difference. It is a capacitive pressure sensor.
  • the second through groove has a continuous conductor substrate including a first surface insulator substrate on the upper surface, a second surface insulator substrate on the lower surface, and a first sidewall capacitor electrode on the side surface ( (A first continuous conductor substrate), which is a closed space surrounded by the first surface insulator substrate, the second surface insulator substrate, and the first continuous conductor substrate, (1) or It is a capacitance-type pressure sensor as described in (2).
  • the third through-groove has a continuous conductor substrate including a first surface insulator substrate on the upper surface, a second surface insulator substrate on the lower surface, and a second sidewall capacitor electrode on the side surface ( A second continuous conductor substrate), and a closed space surrounded by the first surface insulator substrate, the second surface insulator substrate, and the second continuous conductor substrate, (2) or The capacitance type pressure sensor according to (3).
  • the present invention relates to a part of the first surface insulating substrate on the upper surface of the first through groove and / or the second through groove and / or the third through groove and / or part of the lower surface of the second surface insulating substrate. 6.
  • the capacitance type pressure sensor according to any one of (1) to (4), wherein a pressure transmission hole for introducing pressure is formed.
  • the present invention has a through groove (fourth through groove) surrounding the conductive substrate surrounding the second through groove and / or the third through groove, and the fourth through groove includes the second through groove and the second through groove.
  • the fourth through groove has the same pressure space as the through groove.
  • the upper surface of the fourth through groove is the first surface insulator substrate, the lower surface is the second surface insulator substrate, and the conductive substrate is continuous with the side surface (third continuous conductor substrate).
  • the fourth through groove is a closed space surrounded by the first surface insulator substrate, the second surface insulator substrate, and the third continuous conductor substrate, (1) to (5)
  • the capacitance type pressure sensor according to any one of the above.
  • a pressure transmission hole for introducing pressure is formed in a part of the first insulator substrate on the upper surface and / or the second insulator substrate on the lower surface of the fourth through groove including the second through groove.
  • the capacitive pressure sensor according to (6) characterized in that: (8)
  • the second through groove is surrounded by a conductor substrate (first continuous conductor substrate) that forms the first sidewall capacitor electrode, and the conductor that forms the first sidewall capacitor electrode.
  • the substrate is surrounded by the first through groove, and the first through groove is surrounded by the conductor substrate forming the second sidewall capacitor electrode, and the conductor forming the second sidewall capacitor electrode.
  • the substrate is surrounded on its side by the third through groove,
  • the outer surface of the second through-groove (the surface formed by the conductive substrate that forms the second through-groove and the first sidewall capacitor electrode, and is also the inner surface of the conductor substrate that forms the first sidewall capacitor electrode),
  • the planar shape is a polygonal shape (G shape)
  • the outer surface of the first sidewall capacitor electrode (the surface formed by the first sidewall capacitor electrode and the first through groove and also the inner surface of the first through groove) has a planar shape that is substantially similar to the G shape.
  • a square shape The outer surface of the first through groove (the surface formed by the second side wall capacitor electrode and the first through groove and also the inner surface of the second side wall capacitor electrode) has a planar shape that is substantially similar to the G shape.
  • a square shape The outer surface of the second side wall capacitor electrode (the surface formed by the second side wall capacitor electrode and the third through groove and also the inner surface of the third through groove) has a planar shape substantially similar to the G shape.
  • Each side thickness (width) of the conductor forming the capacitive electrode is substantially equal, Each side of the conductor forming the polygonal first sidewall capacitor electrode forms a first sidewall capacitor electrode, The electrostatic capacitance type according to any one of (1) to (5), wherein each side of the conductor forming the polygonal second side wall capacitive electrode forms a second side wall capacitive electrode, respectively. pressure sensor.
  • the side surface of the second through groove is surrounded by the conductive substrate forming the first side wall capacitive electrode, and the conductive substrate forming the first side wall capacitive electrode is formed by the first through groove.
  • the first through groove is surrounded by a conductive substrate that forms a second sidewall capacitor electrode, and the conductive substrate that forms the second sidewall capacitor electrode is surrounded by a third through groove.
  • the outer surface of the second through-groove (the surface formed by the conductive substrate that forms the second through-groove and the first sidewall capacitor electrode, and is also the inner surface of the conductor substrate that forms the first sidewall capacitor electrode),
  • the planar shape is a curved shape (S shape)
  • the outer surface of the first side wall capacitor electrode (the surface formed by the first side wall capacitor electrode and the first through groove and also the inner surface of the first through groove) has a planar shape that is substantially similar to the S shape.
  • Shape The outer surface of the first through groove (the surface formed by the second side wall capacitor electrode and the first through groove and also the inner surface of the second side wall capacitor electrode) has a planar shape substantially similar to the S shape.
  • the outer surface of the second side wall capacitor electrode (the surface formed by the second side wall capacitor electrode and the third through groove, which is also the inner surface of the third through groove) has a planar shape that is substantially similar to the S shape. Shape, further, The thickness (width) of the conductor forming the curved first sidewall capacitor electrode is substantially constant in each portion, and the width of the curved first through groove is substantially constant in each portion.
  • the thickness (width) of each side of the conductor forming the two side wall capacitive electrode is substantially constant in each part,
  • the entire conductor that forms the curved first sidewall capacitor electrode is stripped to form the first sidewall capacitor electrode,
  • the capacitive pressure sensor according to any one of (1) to (5), wherein the entire conductor forming the curved second sidewall capacitance electrode forms the second sidewall capacitance electrode. .
  • the present invention further includes a conductor substrate (third continuous conductor substrate) whose side surface surrounding the third through groove is continuous, and the third through groove includes the first surface insulator substrate and the second surface.
  • the present invention is characterized in that a pressure transmission hole for introducing pressure is formed in a part of the first insulator substrate on the upper surface of the third through groove and / or the second insulator substrate on the lower surface.
  • (12) The present invention is characterized in that a pressure transmission hole for introducing pressure is formed in a part of the first insulator substrate on the upper surface of the third through groove and / or the second insulator substrate on the lower surface.
  • the conductive substrate is a low-resistance N-type silicon substrate having a high-concentration impurity element, a low-resistance P-type silicon substrate having a high-concentration impurity element, a conductive rubber substrate, and a conductive polymer material.
  • the first surface insulator substrate is a substrate selected from a glass substrate, a quartz substrate, a transparent plastic substrate, a polymer material substrate, and a ceramic substrate. The capacitance type pressure sensor according to any one of the above.
  • the second surface insulator substrate is a substrate selected from a glass substrate, a quartz substrate, a transparent plastic substrate, a polymer material substrate, and a ceramic substrate.
  • the capacitance type pressure sensor according to any one of items 1).
  • the present invention provides a second surface (for example, 1.0 mm or less) having a top surface (first surface) and a bottom surface (second surface) (for example, having a thickness of 2.0 mm or less).
  • An insulator substrate (first surface insulator substrate) (for example, having a thickness of 1.0 mm or less) is attached to the first surface side of the conductor substrate, and a part or all of the through groove is a closed space.
  • a method of manufacturing a capacitive pressure sensor including a process, A conductor side wall sandwiched between two adjacent through grooves is used as an electrode of a capacitance element, and the capacitance side wall electrode is deformed by a pressure difference inside the two adjacent through grooves. It is a manufacturing method of a capacitance type pressure sensor using change of electric capacity.
  • the present invention provides a second surface (for example, 1.0 mm or less) having a front surface (first surface) and a back surface (second surface) (for example, having a thickness of 2.0 mm or less).
  • first surface insulator substrate for example, having a thickness of 1.0 mm or less
  • a method of manufacturing a capacitive pressure sensor including: The conductor side wall sandwiched between two adjacent through grooves (first surface through groove and second surface through groove) is used as an electrode of the capacitance element, and the pressure of the first surface through groove and the second surface through groove are This is a method of manufacturing a capacitive pressure sensor using the change in the capacitance of the capacitive element caused by deformation of the conductor side wall electrode due to a pressure difference.
  • an insulator substrate (first surface insulator substrate) (for example, having a thickness of 1.0 mm or less) is attached to the first surface side of the conductor substrate, and the first surface through groove
  • the present invention provides a first surface insulator substrate and / or a through groove or a first surface through groove attached to an upper surface of the through groove or the first surface through groove and / or the second surface through groove.
  • the present invention provides a conductive substrate that is continuous with the electrode of the capacitance element, which is a conductive sidewall sandwiched between two adjacent through grooves (first surface through groove and second surface through groove), and The other electrode of the capacitive element opposite to the first surface insulator substrate attached to the upper surface of the continuous conductor substrate and / or the temporary surface, or a contact hole in a part of the second surface insulator substrate And a step of forming a conductor film in the contact hole and forming an electrode / wiring for connecting to the outside on the first surface insulator substrate and / or the second surface insulator substrate.
  • the conductive substrate is a low-resistance N-type silicon substrate having a high-concentration impurity element, a low-resistance P-type silicon substrate having a high-concentration impurity element, a conductive rubber substrate, and a conductive polymer material.
  • the substrate is a substrate selected from a metal substrate such as copper or aluminum.
  • the first surface insulator substrate is a substrate selected from a glass substrate, a quartz substrate, a transparent plastic substrate, a polymer material substrate, and a ceramic substrate.
  • the second surface insulator substrate is a substrate selected from a glass substrate, a quartz substrate, a transparent plastic substrate, a polymer material substrate, and a ceramic substrate. 22) The method for producing a capacitive pressure sensor according to any one of the items 22).
  • the present invention provides a silicon substrate having a low concentration impurity region on the upper surface (first surface) side and a reverse conductivity type high concentration impurity region reaching the lower surface (second surface) on the lower side.
  • the silicon substrate side wall (A1) sandwiched between the adjacent first surface groove O1 and second surface groove Q2 is used as an electrode of one capacitance element, and is opposed to the first surface groove O1 with the second surface groove Q2 interposed therebetween.
  • the side wall (A2) of the silicon substrate sandwiched between the first surface groove O2 and the second surface groove Q2 is used as the electrode of the other electrostatic capacitance element, and the pressure of the first surface grooves O1 and O2 and the second surface groove Q2
  • a capacitance type pressure sensor that performs pressure detection by changing the capacitance of the capacitance element in the second surface groove Q2 by deforming the silicon substrate side walls A1 and A2 due to a pressure difference.
  • the first surface grooves O1 and O2 are surrounded by a second surface groove and supported by a silicon substrate having a low-concentration impurity region on the upper surface (first surface) side of the silicon substrate. It is a capacitive pressure sensor.
  • the present invention provides a silicon substrate having a low concentration impurity region on the upper surface (first surface) side and a reverse conductivity type high concentration impurity region reaching the lower surface (second surface) on the lower side.
  • a capacitive pressure sensor having a groove (second surface groove) that does not reach The silicon substrate side wall (A1) sandwiched between the adjacent first surface through groove R1 and second surface groove Q2 is used as an electrode of one capacitance element, and the first surface through groove R1 is sandwiched between the second surface groove Q2.
  • the silicon substrate side wall (A2) sandwiched between the first surface through groove R2 and the second surface groove Q2 facing each other is used as the electrode of the other electrostatic capacitance element, and the pressure in the first surface through grooves R1 and R2 and the second Capacitance characterized in that pressure detection is performed by changing the capacitance of the capacitive element in the second surface groove Q2 by deforming the silicon substrate side walls A1 and A2 due to the pressure difference of the surface groove Q2.
  • Mold pressure sensor The first surface through grooves R1 and R2 are surrounded by a second surface groove and supported by a silicon substrate having a low concentration impurity region on the upper surface (first surface) side of the silicon substrate. It is a capacitance type pressure sensor.
  • the present invention is a capacitance-type pressure sensor characterized in that a high-concentration impurity diffusion layer having a conductivity type opposite to that of the low-concentration impurity region on the second surface groove Q2 side is not formed.
  • a high-concentration impurity diffusion layer of the opposite conductivity type is formed in the low-concentration impurity region on the side wall, and electrodes / wirings (C electrodes / wirings) connected to the high-concentration impurity diffusion layer formed on the upper surface in the B region are formed.
  • the capacitance type pressure sensor according to any one of (24) to (26), wherein (28) The present invention does not form a high-concentration impurity diffusion layer having a conductivity type opposite to that of the first surface of the low-concentration impurity region in the upper part on the second surface groove Q2 side.
  • the upper surface of the low concentration impurity region (B region) in the upper part of the second surface through groove different from the second surface groove Q2 side and the first surface grooves O1 and O2 connected thereto, or the first surface through groove, which is a pressure sensor A high-concentration impurity diffusion layer having a conductivity type opposite to this is formed in the low-concentration impurity regions on the sidewalls of R1 and R2, and electrodes / wirings (C electrodes) connected to the high-concentration impurity diffusion layer formed on the upper surface in the B region High-concentration impurities (low resistance) on the first surface groove O1 and the first surface groove O2 on the second surface groove Q2 side or the side walls of the first surface through groove R1 and the first surface through groove R2 Silicon that is the region Through the conductor substrate and the silicon semiconductor substrate which is a high concentration impurity (low resistance) region in the side wall of the first surface groove O1 and the first surface groove O2 or the first surface through grooves R1 and R2, the C electrode /
  • the present invention provides the semiconductor device according to any one of (24) to (28), wherein the low concentration impurity region is a region formed by epitaxial growth on a low resistance silicon substrate having a high concentration impurity. It is an electrostatic capacitance type pressure sensor of description. (30) The present invention is characterized in that the low concentration impurity region is a region formed by bonding a high resistance silicon substrate having a high concentration impurity on a low resistance silicon substrate having a high concentration impurity. 24. A capacitance type pressure sensor according to any one of items 24) to 28).
  • an impurity diffusion layer having a conductivity type opposite to that of the first surface grooves O1 and O2 or the first surface through-grooves R1 and R2 is formed by a rotary ion implantation method or a pre-deposition method.
  • the invention according to any one of (24) to (31) is characterized in that the present invention is mounted on the same silicon substrate on which a semiconductor device such as a transistor is formed. It is a capacitance type pressure sensor.
  • the present invention provides a silicon substrate having a low concentration impurity region on the upper surface (first surface) side and a reverse conductivity type high concentration impurity region reaching the lower surface (second surface) on the lower side.
  • a step of forming a groove (first surface groove) that does not reach the second surface side from the first surface side, and a groove that reaches the low concentration impurity region on the first surface side from the second surface side but does not reach the first surface A method of manufacturing a capacitive pressure sensor, comprising a step of forming a (second surface groove),
  • the silicon substrate side wall (A1) sandwiched between the adjacent first surface groove O1 and second surface groove Q2 is used as an electrode of one capacitance element, and is opposed to the first surface groove O1 with the second surface groove Q2 interposed therebetween.
  • the side wall (A2) of the silicon substrate sandwiched between the first surface groove O2 and the second surface groove Q2 is used as the electrode of the other capacitance element, and the pressure of the first surface grooves O1 and O2 and the second surface groove Q2
  • a capacitance type pressure sensor characterized in that pressure detection is performed by changing the capacitance of the capacitive element in the second surface groove Q2 by deforming the silicon substrate side walls A1 and A2 due to a pressure difference.
  • Manufacturing method The first surface grooves O1 and O2 are surrounded by a second surface groove and supported by a silicon substrate having a low-concentration impurity region on the upper surface (first surface) side of the silicon substrate. This is a method of manufacturing a capacitive pressure sensor.
  • the present invention provides a silicon substrate having a low-concentration impurity region on the upper surface (first surface) side and a reverse-conduction type high-concentration impurity region reaching the lower surface (second surface) on the lower side.
  • a step of forming a through groove (first surface through groove) reaching the second surface from the first surface side, and a groove reaching the low concentration impurity region on the first surface side from the second surface side but not reaching the first surface A method of manufacturing a capacitive pressure sensor, comprising a step of forming a (second surface groove), The silicon substrate side wall (A1) sandwiched between the adjacent first surface through groove (first surface through groove R1) and second surface groove (second surface groove Q2) is used as an electrode of one capacitance element.
  • the silicon substrate side wall (A2) sandwiched between the first surface through groove R2 and the second surface groove Q2 facing the first surface through groove R1 with the two surface groove Q2 interposed therebetween is used as an electrode of the other capacitance element.
  • the silicon substrate side walls A1 and A2 are deformed by the pressure difference between the first surface through grooves R1 and R2 and the second surface groove Q2, so that the capacitance of the electrostatic capacitance element in the second surface groove Q2 changes.
  • the first surface through grooves R1 and R2 are surrounded by a second surface groove and supported by a silicon substrate having a low concentration impurity region on the upper surface (first surface) side of the silicon substrate.
  • the present invention further includes a step of attaching an insulating substrate to the second surface side of the first surface through groove after forming the first surface through groove, whereby the second surface through groove second is formed.
  • the present invention further includes a step of introducing an impurity layer having a conductivity type opposite to that of the low concentration substrate surface on the side wall of the first surface through groove by a predeposition method or a rotary ion implantation method.
  • (34) to (36) is a method for producing a capacitance type pressure sensor according to any one of items.
  • a deep groove or a through hole is formed in the thickness direction of the semiconductor substrate, and a pressure sensor is formed using a capacitance formed between the grooves or the through holes. Further, a piezoresistor is formed on the side surface (side wall) of the groove or the through hole, and a pressure sensor is formed by utilizing a change in piezo resistance due to deformation of the through hole side wall. (39)
  • the present invention provides a semiconductor device having a plurality of grooves formed in the thickness direction of the semiconductor substrate, and the pressure in the space in one groove (first groove) of the plurality of adjacent grooves and the adjacent one.
  • the present invention has a capacitive pressure sensor that detects pressure by changing the capacitance in the first groove and / or the second groove, and the opening of the first groove is made airtight by a cap and is fixed. It is characterized by being held at pressure. Furthermore, a cap provided with one or a plurality of pressure introducing holes is attached to the opening of the first groove, and a cap provided with one or a plurality of pressure introducing holes is attached to the opening of the second groove. To do.
  • the present invention provides a semiconductor device having a third groove portion (third groove portion) adjacent to the second groove portion and facing the first groove portion with respect to the second groove portion, in the first groove portion and the third groove portion.
  • the first electrode is formed on the side wall (partition wall) between the first groove portion and the second groove portion on the first groove portion side wall.
  • a second electrode is formed on the side wall (partition wall) between the groove and the second groove, and a capacitor is formed between the first electrode and the second electrode. And It has two electrodes separated on two opposite side walls of the first groove, and a space capacity in the first groove is formed between these two electrodes.
  • the present invention has two electrodes separated on two opposing side walls of the second groove portion, and a space capacity in the second groove portion is formed between the two electrodes, and two or more Capacitors are connected in parallel. Alternatively, two or more capacitors are connected in series. (43)
  • the present invention provides a semiconductor device having a plurality of through holes formed in the thickness direction of the semiconductor substrate and penetrating the first surface and the second surface of the semiconductor substrate. A side wall (between the first through hole and the second through hole) due to the pressure in the space in one through hole (first through hole) and the pressure in the space in the through hole (second through hole) adjacent thereto.
  • a capacitance type pressure sensor that detects pressure by changing the capacitance in the first through hole and / or in the second through hole by utilizing the deformation of the partition wall, and caps the opening of the first through hole It is characterized by being airtight and kept at a constant pressure.
  • a cap having one or more pressure introduction holes is attached to the opening of the first through hole, and a cap having one or more pressure introduction holes is attached to the opening of the second through hole.
  • the present invention provides a first through hole in a semiconductor device having a third through hole (third through hole) adjacent to the second through hole and facing the first through hole with respect to the second through hole.
  • the inside pressure and the inside of the third through hole are the same pressure, and this pressure is different from the pressure in the second through hole and differs from the pressure in the side wall (partition) between the first through hole and the second through hole.
  • a first electrode is formed, and a second electrode is formed on the side wall (partition wall) between the third through hole and the second through hole on the side wall of the third through hole.
  • a capacitor is formed between the electrodes.
  • the first through hole has two electrodes separated on two opposing side walls, and a space capacity in the first through hole is formed between the two electrodes.
  • the present invention has two electrodes separated on two opposing side walls of the second through-hole, and a space capacity in the second through-hole is formed between the two electrodes.
  • the above capacity is connected in parallel.
  • two or more capacitors are connected in series.
  • the present invention includes a piezoresistive pressure sensor that detects pressure by a change in piezoresistance formed on the side wall (partition wall).
  • the resistance formed in the 2 or more groove part side wall is connected in parallel, It is characterized by the above-mentioned.
  • resistors formed on two or more groove side walls are connected in series.
  • four resistors are connected in an annular series formed on one groove side wall.
  • the opening of the first groove or the first through hole is hermetically sealed with a cap and held at a constant pressure, and the first groove and / or the second groove, or the first through hole and / or the second through hole.
  • a cap provided with one or a plurality of pressure introducing holes is attached to the opening.
  • the substrate side wall is perpendicular or substantially perpendicular to the first surface or the second surface of the substrate (preferably with an inclination of 20 degrees or less with respect to the first surface or the second surface). Is less than 10 degrees, more preferably 5
  • the pressure sensor is formed on both sides of the substrate side wall, or one of the adjacent recesses (first recess) is formed from the first surface side of the substrate.
  • the other of the adjacent concave portions is formed from the second surface side of the substrate, or the first concave portion does not penetrate the second surface side of the substrate, and
  • the two recesses do not penetrate to the second surface side, or the adjacent recesses (first recess and second recess) are both formed from the first surface side of the substrate, or are adjacent to each other.
  • the recesses are both formed from the second surface side of the substrate, or the adjacent recesses (the first recess and the second recess) are the second surface from the first surface side.
  • a pressure transmission hole for transmitting pressure into the recess is opened in a part of the thin plate covering the recess, and the substrate is a semiconductor substrate or a conductor.
  • An insulating film interposed between the substrate side wall and the first conductor film, and the pressure sensor and the transistor are both mounted in one chip, or the substrate is made of polymer. And the recess is formed in the polymer by using an imprint method.
  • the pressure sensor in addition to (47), in the pressure sensor formed on both sides of the substrate side wall, the pressure sensor is formed on the first recess side formed on the first surface side of the substrate and opened on the first surface side.
  • Lead electrode pads connected to the first conductor film and the second conductor film are formed on the first surface side of the substrate, and are formed on the second surface side of the substrate and open to the second surface side.
  • the present invention is a pressure sensor having a plurality of recesses formed in an insulator film formed on a semiconductor substrate, and in two adjacent recesses (first recess and second recess).
  • the sandwiched insulator film sidewall is a diaphragm, and the first conductor film formed on the side surface of the insulator film sidewall, the piezoelectric film formed on the first conductor film, and the piezoelectric film
  • a pressure sensor having a formed second conductive film, wherein the insulator film side wall and the piezoelectric film formed thereon are formed by a pressure difference between the two concave portions (first concave portion and second concave portion).
  • the first conductor film, the piezoelectric film formed on the first conductor film, and the second conductor film formed on the piezoelectric film are formed of the insulator film.
  • the insulator film is a polymer or ceramic or a mixture thereof, or the recess in the insulator film is formed by using an imprint method, The insulator film is formed in a recess formed in a semiconductor substrate.
  • the first concave portion having the opening on the first surface side adjacent to the first surface and the second surface side being the opening.
  • a pressure sensor having a piezoelectric film formed on the substrate side wall sandwiched between the second recesses as a diaphragm, forming a first recess, forming a first conductor film on the side of the first recess.
  • the first recess is a through groove penetrating to the second surface side of the substrate, or the second recess is a through groove penetrating to the first surface side of the substrate.
  • the substrate side wall sandwiched between the first recess and the second recess having the adjacent first surface side as an opening.
  • a pressure sensor having a piezoelectric film formed on the substrate side wall, a step of forming the first recess and the second recess, a step of forming a first conductor film on a side surface of the first recess, Forming a first piezoelectric film on the first conductive film; forming a second conductive film on the first piezoelectric film; and a first recess and a second on the first surface.
  • a method of manufacturing a pressure sensor comprising: attaching a first thin plate that covers a recess, and further forming a third conductor film on a side surface of the second recess, the third conductor film A step of forming a second piezoelectric film on the second piezoelectric film; and a step of forming a fourth conductive film on the second piezoelectric film.
  • a plurality of adjacent recesses are formed in the piezoelectric substrate and sandwiched between the adjacent recesses.
  • a pressure sensor having a diaphragm on a side wall of a piezoelectric substrate, a first conductive film formed on one side surface of the side wall of the piezoelectric substrate, and a second sensor formed on the other side surface of the side wall of the piezoelectric substrate.
  • a potential difference generated when the piezoelectric substrate side wall is deformed by a different pressure difference in the plurality of adjacent recesses including the conductor film is detected using the first conductor film and the second conductor film.
  • the piezoelectric substrate side wall is perpendicular or substantially perpendicular to the first surface or the second surface of the piezoelectric substrate (the inclination is 20 degrees with respect to the first surface or the second surface). Or less, preferably 10 degrees or less, And wherein preferably it is less than 5 degrees) in Innovation,
  • one of the adjacent recesses is formed from the first surface side of the substrate, and the other of the adjacent recesses (second recess) Is formed from the second surface side of the substrate, and the first concave portion does not penetrate the second surface side of the substrate, and the second concave portion does not penetrate the second surface side.
  • the first recess penetrates the second surface side of the substrate, and / or the second recess penetrates the second surface side, or the adjacent recess (first recess).
  • the second recess are both formed from the first surface side of the substrate, or the adjacent recesses (first recess, second recess) are both formed from the second surface side of the substrate.
  • the adjacent concave portion is a through groove penetrating from the first surface side to the second surface side, or Characterized in that the adjacent recesses is a through groove extending through the first surface side from the second surface side.
  • the first surface side and / or the second surface side of the concave portion is covered with a thin plate different from the substrate, and a part of the thin plate covering the concave portion is included in the concave portion.
  • a pressure transmission hole for transmitting pressure is opened, or the piezoelectric substrate is a piezoelectric polymer, and the concave portion is formed in the piezoelectric polymer using an imprint method, or the piezoelectric substrate Is a piezoelectric ceramic, and the concave portion is formed in the piezoelectric ceramic by using an imprint method. Further, when a plurality of pressure sensors are formed in the substrate, the plurality of pressure sensors are connected, and the conductor film and / or the electrode having the same polarity potential are connected to increase the potential. It is characterized by that.
  • the first concave portion having the opening on the first surface side adjacent to the first surface and the opening on the second surface side.
  • the step of forming the first recess, the step of forming the first conductor film on the side surface of the first recess, the first surface on the first surface A step of attaching a first thin plate covering the first recess, a step of forming the second recess, a step of forming a second conductor film on a side surface of the second recess, and a second step of covering the second recess on the second surface
  • a pressure sensor manufacturing method wherein the first recess is a through groove penetrating to the second surface side of the substrate, and the second recess Is a through groove penetrating to the first surface side of
  • the present invention is sandwiched between the first recess and the second recess having the adjacent first surface side as an opening.
  • the first recess and the second recess are through-grooves penetrating to the second surface side of the substrate.
  • the present invention is a pressure sensor having a plurality of recesses formed in a piezoelectric film formed on a semiconductor substrate, and sandwiched between two adjacent recesses (a first recess and a second recess).
  • the piezoelectric film side wall is deformed by a pressure difference between the two concave portions (the first concave portion and the second concave portion), so that both sides of the piezoelectric film side wall are deformed.
  • the pressure sensor detects a pressure difference between the two concave portions (first concave portion and second concave portion) using a potential difference generated on a surface, and the piezoelectric film is a polymer or ceramic.
  • the recesses in the piezoelectric film are formed using an imprint method, and the piezoelectric film is formed in a recess formed in the semiconductor substrate,
  • the plurality of pressure sensors are connected, and the conductor film and / or the electrode having the same polarity potential are connected to each other.
  • the pressure sensor and the device other than the pressure sensor are formed on both sides of the piezoelectric film side wall. It is characterized by being connected through at least a body membrane.
  • a plurality of adjacent recesses are formed in the substrate and are adjacent to each other.
  • a pressure sensor having a substrate side wall sandwiched between recesses as a diaphragm, wherein the substrate side wall is deformed by a pressure difference between a plurality of adjacent recesses (a first recess and a second recess), whereby the substrate side wall is deformed.
  • a pressure sensor that detects a pressure difference between the plurality of adjacent recesses (first recess and second recess) by using a change in resistance of the formed piezoresistor, and
  • the substrate side wall is perpendicular or substantially perpendicular to the first surface or the second surface of the piezoelectric substrate (the inclination is 20 degrees or less, preferably 10 degrees or less, more preferably 5 degrees with respect to the first surface or the second surface).
  • the first concave portion is formed from the first surface side with the first surface side of the substrate as an opening
  • the second concave portion is formed on the first surface side of the substrate.
  • the second surface side is formed from the second surface side as an opening, or, further, the first recess is a through groove penetrating the second surface side of the substrate, and / or the second recess is It is a penetration groove which penetrates to the 1st surface side of the substrate.
  • the plurality of adjacent concave portions are formed from the first surface side with the first surface side of the substrate as an opening.
  • the piezoresistor is a thin film resistor
  • the substrate is a semiconductor substrate, and the piezoresistor is a diffusion resistor formed by a pre-deposition method or an ion implantation method, or a thin film resistor, and a transistor is mounted in addition to a pressure sensor in the substrate, An arithmetic circuit for processing a signal from the pressure sensor; or the substrate is made of a polymer, and the recess is formed by an imprint method.
  • the present invention relates to a pressure sensor having a plurality of recesses formed in an insulator film formed on a semiconductor substrate, wherein two adjacent recesses (first recess and second recess) are provided.
  • the sandwiched insulator film side wall is a diaphragm, and the insulator film side wall is deformed by a pressure difference between a plurality of adjacent recesses (first recess and second recess), and is formed on the insulator film side wall.
  • a pressure difference between the plurality of adjacent recesses is detected using a change in resistance of the piezoresistor, and the insulator film is a polymer,
  • the recess is formed by an imprint method, and the piezoresistor is a thin film resistor.
  • a plurality of adjacent recesses are formed in the substrate and are adjacent to each other.
  • a pressure sensor using a substrate side wall sandwiched between recesses as a diaphragm, wherein the substrate side wall is deformed by a pressure difference between a plurality of adjacent recesses (a first recess and a second recess), thereby static electricity in the recess.
  • the first recess is formed from the first surface side with the first surface side of the substrate as an opening, and the second recess opens from the second surface side of the substrate.
  • first recess is a through groove penetrating to the second surface side of the substrate, and / or the second recess is on the first surface side of the substrate.
  • a plurality of adjacent recesses are formed from the first surface side with the first surface side of the substrate as an opening.
  • the plurality of adjacent recesses are through-grooves penetrating to the second surface side of the substrate, or the substrate is made of a polymer, and the recess is It is formed by a printing method.
  • the present invention is a pressure sensor having a plurality of recesses formed in an insulator film formed on a semiconductor substrate, and sandwiched between two adjacent recesses (first recess and second recess).
  • the pressure sensor having a counter electrode formed on opposing side surfaces in the recess, the insulator film side wall being a diaphragm, and the insulator due to a pressure difference between the two recesses (first recess and second recess)
  • the pressure difference between the two recesses (the first recess and the second recess) is detected using a change in electrostatic capacitance between the counter electrodes in the recess when the film side wall is deformed.
  • the insulator film is a polymer or ceramic, and the recess is formed by an imprint method, or the insulator film is a recess formed in a semiconductor substrate. Or the opening of the recess is covered with a thin plate, and a pressure transmission hole for transmitting pressure into the recess is opened in a part of the thin plate covering the recess.
  • the present invention provides a medium ejection device using a substrate having a plurality of through grooves penetrating from the first surface to the second surface, and passing through at least one through groove among the plurality of adjacent through grooves.
  • the pressure variable through-groove and the medium discharge through-groove are formed by changing the pressure in the pressure variable through-groove as a through-groove (pressure variable through-groove) whose pressure can be changed.
  • the medium is introduced into the medium discharge through groove or the medium in the medium discharge through groove is discharged from the medium discharge through groove using the expansion or contraction of the side wall of the substrate.
  • the first thin plate is attached to the first surface side of the through groove to cover the through groove, and the first thin plate in the pressure variable through groove.
  • the medium is introduced into the medium discharge through groove from the medium introduction hole, and the pressure of the pressure variable through groove is increased from the pressure of the adjacent medium discharge through groove through the pressure transmission hole of the pressure variable through groove. thing Therefore, by expanding the substrate side wall between the pressure variable through groove and the medium discharge through groove toward the medium discharge through groove, the medium is discharged from the medium discharge hole of the medium discharge through groove. It is characterized by discharging out of the through groove.
  • the substrate sidewall between the medium ejection through groove and the through groove adjacent to the medium ejection through groove is the substrate sidewall variable penetration groove side and / or the medium ejection penetration.
  • a medium is introduced into the medium ejection through groove by deforming the piezoelectric film by deforming the piezoelectric film by applying a voltage between the film and the second conductor film; or Media ejection through groove A medium discharge device, characterized in that the medium discharged from the medium discharge connection slot.
  • the present invention provides a medium ejection device using a piezoelectric substrate having a plurality of through grooves penetrating from the first surface to the second surface, and ejects at least one through groove among the plurality of adjacent through grooves.
  • a piezoelectric substrate on the side of the medium discharge through groove on the piezoelectric substrate side wall between the medium discharge through groove and the through groove adjacent to the medium discharge through groove (substrate side wall variable through groove)
  • the first conductor film and the second conductor By deforming the piezoelectric substrate side wall by applying a voltage between the films, the medium is introduced into the medium discharge through groove, or the medium in the medium discharge through groove is used as the medium discharge medium.
  • Spout from through groove A medium discharge device which is characterized in that.
  • the present invention provides at least one through groove among the plurality of adjacent through grooves.
  • the discharge through groove, the at least one through groove is a through groove (pressure variable through groove) whose pressure can be changed, and the pressure in the pressure variable through groove is changed to thereby discharge the pressure variable through groove and the medium.
  • a medium is introduced into the medium discharge through groove using the expansion or contraction of the substrate side wall between the medium discharge through groove, or the medium in the medium discharge through groove is transferred to the medium discharge through groove.
  • the plurality of medium discharge through grooves are attached to the first thin plate attached to the first surface of the substrate and / or to the second surface of the substrate covering the medium medium discharge through grooves.
  • a pump device Formed on a thin plate Which are connected by the medium flow path, a pump device, characterized in that the medium is moved to one medium discharge connection slot from said medium flow passage through the other medium discharge connection slot.
  • the present invention provides a pump device for moving a medium using a substrate having a plurality of through grooves penetrating from the first surface to the second surface, wherein at least one of the adjacent through grooves is a medium.
  • a discharge through groove is used, and at least one through groove is a through groove (internal volume variable through groove) whose internal volume can be changed, and the medium discharge in the medium discharge through groove side and / or the internal volume variable through groove side
  • a first conductor film on a substrate side wall between the through-groove for use and the inner volume variable through-groove, a piezoelectric film on the first conductor film, and a second conductor on the piezoelectric film A medium having a film, wherein the piezoelectric film is deformed by applying a voltage to the first conductive film and the second conductive film, and the side wall of the substrate is expanded or contracted.
  • the medium in the medium discharge through groove is discharged from the medium discharge through groove, and the plurality of medium discharge through grooves are attached to the first surface of the substrate covering the medium medium discharge through groove.
  • the medium is connected by a medium flow passage formed in the thin plate and / or the second thin plate attached to the second surface of the substrate, and the medium passes from one medium discharge through groove to the other medium discharge through. It is a pump device characterized by moving to a groove.
  • the present invention is a heat exchanger including a first recess and a second recess formed in a substrate and having an inlet and an outlet, wherein the opening of the first recess and the second recess is covered with a thin plate.
  • the heat medium enters from the entrance of the first recess and exits from the exit, the heat exchange medium enters from the entrance of the second recess and exits from the exit, the first recess is adjacent to the second recess, and the first recess
  • a heat exchanger in which the heat of the heat medium in the first recess moves to the heat exchange medium in the second recess through the substrate side wall between the second recess and the first recess and / or
  • the second recess is a through groove, and the upper and lower surfaces of the through groove are covered with a thin plate, or the substrate is a heat good conductor, and the heat good conductor is carbon, aluminum nitride, gold, silver, copper, Characteristic of aluminum or silicon To.
  • the present invention provides an acceleration sensor including a first substrate having a first recess and a second substrate having a first protrusion having an outer size smaller than the inner size of the first recess.
  • An acceleration sensor that detects an acceleration using a change in capacitance between the first convex portion and the first concave portion, wherein the first concave portion has a rectangular shape;
  • the first convex portion has a rectangular shape, the inner surface of the first concave portion faces the outer surface of the first convex portion, or the inner surface of the first concave portion is a polygonal column side surface,
  • the outer surface of one convex portion is a polygonal column side surface, and the inner surface of the first concave portion is the front
  • the outer surface of the first convex portion is opposed to the outer surface, or the outer surface of the first convex portion has a curved surface, and the inner surface of the first concave portion is a curved surface of the outer surface of the first convex portion.
  • the outer surface of the first protrusion and the inner surface of the first recess are cylindrical side surfaces or elliptic cylinder side surfaces.
  • a conductor film is formed on at least one outer surface of the four outer surfaces of the first convex portion, and the conductive material on the outer surface of the first convex portion is formed.
  • the body film serves as one electrode of electrostatic capacity, and / or a conductor film is formed on the inner surface of the first recess facing the conductor film on the outer surface of the first protrusion,
  • the conductor film on the inner surface of the first recess is one electrode of electrostatic capacity, or an insulating film is further formed on the conductor film on the outer surface of the first protrusion, and / or An insulating film is formed on the conductor film on the outer surface of the first recess, or a conductor film (first conductor film) is formed on all surfaces of the outer surface of the first protrusion.
  • the first conductor films are all connected and / or the conductor film (second (Electrical film) is formed and all the second conductor films are connected, or a weight larger than the mass of the material of the first convex part is attached to the bottom surface of the first convex part. It is characterized by.
  • the present invention provides a sound having a first recess having an opening in the first surface and a second recess adjacent to the first recess in a substrate having a first surface (front surface) and a second surface (back surface). It is a transducer, and a substrate side wall sandwiched between the first concave portion and the second concave portion is used as a diaphragm, and the substrate side wall vibrates by a vibration wave introduced into the first concave portion. A change in potential generated in the piezoelectric element is detected or a voltage is applied to the piezoelectric element formed on the substrate side wall to vibrate the substrate side wall to generate a vibration wave from the first recess.
  • the substrate is a piezoelectric body, and is formed on the first conductor film formed on the substrate sidewall on the first recess side and on the substrate sidewall on the second recess side.
  • a potential difference is detected between the second conductor films, or a first conductor film formed on the substrate side wall on the first recess side and a second conductor film formed on the substrate side wall on the second recess side.
  • the substrate sidewall is vibrated by applying a voltage between the first conductor film and the first conductor film formed on the substrate sidewall on the first recess side, or formed on the first conductor film.
  • the substrate includes a first piezoelectric film and a second conductor film formed on the first piezoelectric film, and the substrate side wall vibrates by a vibration wave introduced into the first recess.
  • a potential difference is detected between the first conductor film and the second conductor film by the charge generated in the first piezoelectric film formed on the side wall, or the first conductor film and the second conductor are detected.
  • the substrate side by applying a voltage between the body membranes And a vibration wave is generated from the first recess.
  • a third conductor film formed on the substrate side wall on the second recess side, or formed on the third conductor film.
  • the substrate includes a second piezoelectric film and a fourth conductor film formed on the second piezoelectric film, and the substrate side wall vibrates due to the vibration wave introduced into the first recess.
  • a potential difference is detected between the third conductor film and the fourth conductor film by the charge generated in the second piezoelectric film formed on the side wall, or the third conductor film and the fourth conductor are detected.
  • the substrate is vibrated by applying a voltage between the body films to generate a vibration wave from the first recess.
  • the size of the pressure sensor in the plane of the semiconductor substrate can be extremely reduced. Moreover, since it can be formed using LSI technology such as lithography, a very precise sensor can be created. Various other effects are described in the following items.
  • FIG. 2 is a plan view of the pressure sensor shown in the perspective view of FIG. 1. It is a figure explaining the structure of a pressure sensor, and its manufacturing method. It is a figure which shows the structure and manufacturing method of a pressure sensor which formed the penetration groove
  • FIG. It is a figure explaining the method of manufacturing the pressure sensor (capacitance type element) in one Embodiment of this invention shown in FIG. It is the figure which showed typically the projection when the capacitive element (pressure sensor) created by the embodiment shown in FIG. 6 or FIG. 7 and the figure when mounting a capacitive element (pressure sensor) package on a mounting substrate. It is a figure explaining the method to join a 3rd board
  • FIG. 15 is a diagram showing a method of manufacturing the piezoelectric device of the present invention using the imprint method.
  • FIG. 15 is a diagram showing a method of manufacturing the piezoelectric device of the present invention using the imprint method. It is a figure which shows embodiment which formed the side wall only by the 1st recessed part formed in the 1st surface (front surface) side in a board
  • the first embodiment of the pressure sensor of the present invention is applied to one surface (first surface) of a disk-shaped substrate such as a semiconductor wafer or a rectangular (for example, square or rectangular) thin-plate substrate.
  • a groove (first surface groove) that does not penetrate to the other surface (second surface) is formed, and a groove that does not cross the first surface groove and does not penetrate to the second surface (second surface groove) )
  • a partition type (side wall) that separates the first surface groove and the second surface groove.
  • FIG. 1 is a perspective view for easily explaining the structure of the pressure sensor of the present invention.
  • the substrate used in the first embodiment of the present invention is basically a conductor substrate.
  • the basic meaning is that a part of the substrate is an insulator or a semiconductor as will be described later, but the majority is a conductor.
  • the term “conductor” does not necessarily mean that it is a metal or an alloy, but a substance that has a low electrical resistance and easily flows.
  • a low-resistance semiconductor containing a high concentration impurity element such as N + silicon or P + silicon is also included in the conductor in the present invention. As shown in FIG.
  • first surface grooves O (O1, O2, O3) are formed on the first surface side (upper surface side) in the thickness direction of the substrate toward the second surface side (lower surface side). However, it has not reached the second side. That is, the first surface groove does not penetrate the second surface.
  • the groove Q (Q1, Q2, Q3, Q4) is also formed on the second surface, but does not reach the first surface. That is, the second surface groove does not penetrate the first surface.
  • the structure shown in FIG. 1 is shown in the perspective view from the cross section of the structure of the pressure sensor of this invention.
  • the actual first surface groove has a partition also on this cross-sectional side (x-axis direction (+ side and ⁇ side) shown in the drawing.) That is, the first surface groove is opened only on the first surface side.
  • the actual second surface groove is formed so as to surround the first surface groove (this detail will be more clearly understood in later figures).
  • One side wall of the first surface groove O1 (a partition wall between the first surface groove O1 and the second surface groove Q1) is the side wall 1003-1, and the other side wall (the first surface groove O1 and the second surface groove).
  • a partition wall with the groove Q2) is defined as a side wall 1003-3, and a bottom wall of the first surface groove O1 is defined as 1003-3.
  • One side wall of the first surface groove O2 (a partition wall between the first surface groove O2 and the second surface groove Q2) is the side wall 1004-1, and the other side wall (the first surface groove O2 and the second surface groove).
  • the partition wall with the groove Q3) is defined as a side wall 1004-3), and the bottom wall of the first surface groove O2 is defined as 1004-2.
  • One side wall of the first surface groove O3 (a partition wall between the first surface groove O3 and the second surface groove Q3) is the side wall 1005-1, and the other side wall (the first surface groove O3 and the second surface groove).
  • the partition wall with the groove Q4) is defined as a side wall 1005-3), and the bottom wall of the first surface groove O1 is defined as 1005-2.
  • the first surface grooves O (O1 to O3) are surrounded by the grooves on the second surface side, so there are actually two other side walls (+ side and-side in the X direction). However, it is omitted here.
  • the upper wall on the first surface 1001 side separated by the first surface groove O is defined as a first surface upper wall 1006 (1006-1 to 1006-1). Since the substrate 1000 shown in FIG. 1 is a conductor, the structure shown in FIG. 1 (referred to as a groove pattern) is electrically connected even if the first surface groove O and the second surface groove Q are formed. The capacity cannot be formed as it is. Therefore, the present invention includes an electrically inactive region that reaches the second surface groove from the first surface side on the first surface upper wall. That is, in FIG. 1, a region I1 formed on the first surface upper wall 1006-2 and a region I2 formed on the first surface upper wall 1006-3 are electrically inactive regions. Although these electrically inactive regions I1 and I2 are shown separated in FIG.
  • the electrically inactive region described here is a region where electricity does not flow. That is, the first surface upper wall 1006-2 is a conductor, but the two regions 1006-2-1 and 1006-2-2 separated by the electrically inactive region I1 are not electrically conductive. Therefore, when a voltage is applied to 1006-2-1 and 1006-2-2, electricity does not flow up to a certain breakdown voltage. Similarly, the first surface upper wall 1006-3 is a conductor, but the two regions 1006-3-1 and 1006-3-2 separated by the electrically inactive region I2 are electrically conductive. Therefore, when a voltage is applied to 1006-3-1 and 1006-3-2, electricity does not flow up to a certain withstand voltage.
  • Wiring and electrodes are provided on the upper wall of each first surface.
  • N1 to N6 it is schematically shown as N1 to N6. That is, N1 for 1006-1, N2 for 1006-2-1, N3 for 1006-2-2, N4 for 1006-3-1, N5 for 1006-3-2, and N5 and 1006-4 N6 wiring and electrodes are provided.
  • N1 and N2, N3 and N4, and N5 and N6 are electrically connected, but N2 and N3 are not electrically connected by the electrically inactive region I1. Accordingly, when no pressure is applied, the side wall 1003-3 and the side wall 1004-1 are (substantially) parallel to each other, so that the second surface groove Q2 is a space (insulating) region, and the side wall 1003-3 and the side wall 1004-1.
  • a capacitor (capacitor) is formed. Assuming that the groove width of the second surface groove Q2 (the separation distance between the side wall 1003-3 and the side wall 1004-1) is d1, and the facing area of the side wall 1003-3 and the side wall 1004-1 is S1, the space between these side wall electrodes The resulting capacitance is ⁇ * S1 / d1. Similarly, N4 and N5 are not electrically conducted by the electrically inactive region I2. Therefore, since the side wall 1004-3 and the side wall 1005-1 are (substantially) parallel, the second surface groove Q3 is used as a space (insulation) region, and the side wall 1004-3 and the side wall 1005-1 have a capacitance (capacitor). Forming.
  • the groove width of the second surface groove Q3 (separation distance between the side wall 1004-3 and the side wall 1005-1) is d2, and the facing area of the side wall 1004-3 and the side wall 1005-1 is S2, the space between these side wall electrodes is reduced.
  • the resulting capacitance is ⁇ * S2 / d2.
  • ⁇ is a dielectric constant, and since the capacitance of the present invention is a space capacitance, ⁇ is close to the dielectric constant of a gas such as air or the vacuum dielectric constant.
  • both sides of the first surface groove are shown open, but actually both sides are closed and only the upper side (first surface side) is opened.
  • the second surface groove is formed so as to surround the first surface groove.
  • the first surface groove is supported only by the upper substrate, that is, the upper wall, and the four side surfaces (side walls) of the groove and the bottom surface (bottom wall) of the groove are not in contact with anything, that is, in a floating state. It has become.
  • the space on the first surface side (upper side) and the space on the second surface side (lower side) are completely separated by a substrate 1000 formed in a groove shape.
  • the pressure (Pu) in the upper space and the pressure (Pb) in the lower space are different, the pressure is transmitted and is not leveled. Therefore, in the case of Pu> Pb, the upper wall, the side wall, and the bottom wall forming the groove swell from the first surface side to the second surface side due to the pressure difference.
  • the upper wall, the side wall, and the bottom wall forming the groove swell from the second surface side to the first surface side due to the pressure difference.
  • the side walls (electrodes) 1003-3, 1004-1, 1004-3, 1005-1 and the like constituting the capacitor are formed thinner than the top wall 1006 and the bottom wall, and thus are easily bent.
  • the side wall constituting the capacitor is like a diaphragm that deforms due to a pressure difference.
  • This amount of deformation also varies depending on the physical quantity (for example, Young's modulus) of the side wall (conductor substrate) that is the material to be deformed and the thickness of the side wall. If a material having a low Young's modulus is used as a conductor or the thickness of the side wall is reduced, the amount of bending increases, so that the capacitance change ⁇ C can be increased even with the same pressure difference. (Of course, the strength is required so that the diaphragm does not break due to repeated pressure differences.) The side wall (electrode) is pressed by the side wall frame (upper wall, both side surfaces, bottom wall).
  • Young's modulus Young's modulus
  • various metal materials and alloys can be used as the conductor substrate.
  • Low resistance semiconductor substrates such as N + silicon substrates and P + silicon substrates can also be used.
  • Conductive polymers and conductive rubbers can also be used, and since the Young's modulus of these materials is small, the side wall electrodes fluctuate due to a slight pressure difference, so that minute pressure fluctuations can be detected.
  • Conductive carbon, conductive carbon nanotubes, and conductive graphene can also be used.
  • stainless steel for example, SUS6300
  • SUS6300 stainless steel
  • a conductive substrate having a low Young's modulus and a high-strength material hereinafter referred to as a low Y substrate
  • a bonded substrate formed by bonding silicon including an epi-wafer or the like may also be referred to as a composite substrate hereinafter
  • a composite substrate hereinafter
  • a high-concentration region conductor layer formed in advance in the low-concentration region may be bonded.
  • a substrate in which the first surface grooves and / or the second surface grooves are previously formed on the low Y substrate may be attached to the silicon substrate.
  • a silicon substrate in which the first surface grooves are formed in advance may be attached to the low Y substrate.
  • the composite substrate is not limited to the above combination, and various conductor substrates may be combined. If a sidewall electrode is made of a low Y substrate and functions as a diaphragm, it can be deformed even with a low pressure difference, and sensitivity can be improved. Moreover, it is easy to produce the electrically inactive region I on the silicon substrate side.
  • a silicon oxide film or the like can be formed as an electrically inactive region.
  • An etching method (etching apparatus, etching method, etching gas, etc.) that can perform anisotropic etching at high speed when forming the second surface groove from the low Y substrate side for a composite substrate in which a low Y substrate and a silicon substrate are bonded. It is necessary to etch the low Y substrate to the silicon substrate side depending on the etching conditions.
  • the low Y substrate side is quite thick (for example, the silicon substrate thickness is about 10 to 100 ⁇ m, and the low Y substrate is 200 ⁇ m or more), so over-etching is necessary, so some silicon substrates exposed quickly Therefore, the thickness of the silicon substrate must be determined in consideration of the etching amount.
  • the etching rate of the low Y substrate is fast, the amount of overetching on the silicon substrate side can be suppressed by performing an etching method in which the etching of the silicon substrate is slow or hardly etched.
  • a composite substrate since it is a different material, there is an advantage that it is easy to select an etching method having such a high selectivity.
  • a conductive substrate such as a metal or an alloy or a material having a smaller Y can be used.
  • a conductive rubber member or a conductive polymer is used, the thickness of the side wall electrode can be increased, so that the stability of the process is improved.
  • a substrate to be attached to the low Y substrate a conductor substrate other than a silicon substrate may be used. However, a substrate on which an electrically inactive layer can be easily formed is preferable.
  • FIG. 2 is a plan view of the pressure sensor shown in the perspective view of FIG.
  • FIG. 2A is a diagram (plan view) as viewed from the first surface side.
  • 2 (b) is a side view of the cut surface at A1-A2 shown in FIG. 2 (a)
  • FIG. 2 (c) is a side view of the cut surface at B1-B2 shown in FIG. 2 (a).
  • FIG. 2 shows only a part constituting the capacity, but FIG. 2 can be easily extended to a part included in FIG. 1 and a part not included in FIG.
  • the solid line 1011 (1011-1, 1011-2) indicates the inner frame of the groove O (O1, O2).
  • the groove O is formed downward from the first surface (upper surface), and does not reach the second surface (lower surface) and does not penetrate completely, as shown in FIGS. 2 (b) and (c). It is literally a groove. That is, the groove O1 is open on the first surface (upper surface) side and is surrounded by other surfaces (side walls 1003-1, 1003-3, 1003-4, 1003-5, and the bottom wall 1003-2). The groove O2 is also opened on the first surface (upper surface) side and is surrounded by other surfaces (side walls 1004-1, 1004-3, 1004-4, 1004-5, and the bottom wall 1004-2). A rectangular broken line shown in FIG.
  • the second surface groove Q indicates a boundary with the groove portion on the second surface side, and this outer side is a second surface groove Q (Q1, Q2, Q3). That is, the second surface groove Q is opened on the second surface side (lower side) and formed toward the first surface side (upper surface side), but does not reach the first surface (upper surface) and is completely formed. It is a literal groove that does not penetrate. As can be seen from FIG. 2, the second surface groove Q surrounds the first surface groove O, but the first surface groove O is isolated from the second surface groove Q by the side wall and the bottom wall.
  • the first surface groove O1 is formed by the side walls 1003-1, 1003-3, 1003-4, 1003-5 and the bottom wall 1003-2
  • the first surface groove O2 is formed by the side walls 1004-1, 1004-3, 1004. -4, 1004-5 and the bottom wall 1004-2.
  • the trench O (O1, O2) is surrounded by the electrically inactive layer I (I1, I2, I3, I4, I5).
  • the electrically inactive layer I (I1, I2, I3, I4, I5) not only surrounds the groove O (O1, O2) in a plane but also can be seen from FIGS. 2 (b) and 2 (c). Thus, it is formed in the depth direction of the substrate and reaches the second surface groove Q from the first surface (upper surface). That is, the trench O (O1, O2) is completely isolated by the electrically inactive layer I (I1, I2, I3, I4, I5).
  • the substrate 1000 is a conductor, but the substrate 1000 is completely isolated from 1000-2 and 1000-3 by the electrically inactive layer I (I1, I2, I3, I4, I5).
  • the substrates 1000-1 and 1000-4 surround the substrates 1000-2 and 1000-3, and the substrates 1000-1 and 1000-4 are electrically connected to the substrates 1000-2 and 1000-3. Absent. Until the withstand voltage of the electrically inactive layer I, electricity does not flow between the substrates 1000-1 and 1000-4 and the substrates 1000-2 and 1000-3. Further, since the substrates 1000-2 and 1000-3 are separated by the electrically inactive layer I, the substrates 1000-2 and 1000-3 are not electrically connected, and the withstand voltage of the electrically inactive layer I is not increased. No electricity flows between 2 and 1000-3.
  • the side wall 1003-3 of the first surface groove O1 and the side wall 1004-1 of the first surface groove O2 face each other through the second surface groove Q2.
  • the distance between the side wall 1003-3 and the side wall 1004-1 is d.
  • the pressure P1 on the first surface side is transmitted to the inside of the first surface grooves O1 and O2, and the pressure P2 on the second surface side is transmitted to the inside of the second surface groove Q2.
  • P1 and P2 are equal, the side walls 1003-3 and 1004-1 of the first surface grooves O1 and O2 are not deformed, and the distance between these side walls at that time is defined as d0.
  • the first surface groove O (O1, O2) swells, and the side walls 1003-1, 1003-3, 1004-1, 1004-3 are on the second surface side space Q (Q1, Q2, Q3). Swell toward). That is, d ⁇ d0.
  • the first surface groove O (O1, O2) is recessed, and the side walls 1003-1, 1003-3, 1004-1, 1004-3 are in the space O (O1, O2) on the first surface side. Bulges towards. That is, d> d0.
  • P1 P2 since the side wall 1003-3 and the side wall 1004-1 are substantially parallel, d is substantially constant throughout the side wall 1003-3 and the side wall 1004-1.
  • the upper wall 1006 (1006-1, 1006-2, 1006-3) of the first surface is thicker than the side walls 1003-1, 1003-3, 1004-1, 1004-3 (for example, the substrate is made of silicon).
  • the thickness of the upper wall is about 20 ⁇ m or more and the thickness of the side wall is about 20 ⁇ m or less.
  • the first surface groove O1 is surrounded by four side walls (1003-1, 1003-3, 1003-4, 1003-5), the direction of the distance that affects the capacitance change (A1- in FIG. 2).
  • the deformation of -3 is small. Further, since the thickness of the bottom wall 1003-2 of the first surface groove O1 is also thicker than the thickness of the side wall 1003-3 constituting the capacity, the deformation of the bottom wall 1003-2 is smaller than the deformation of the side wall 1003-3. Of course, the deformation of the side wall 1003-3 is small at the corners of the side wall 1003-3 and the bottom wall 1003-2. Further, the deformation of the side wall 1003-3 at the corner between the upper wall 1006-2 and the side wall 1003-3 is small.
  • the pressure difference P1-P2 between P1 and P2 when the pressure difference P1-P2 between P1 and P2 is generated, the most deformed portion is near the center of the side wall 1003-3, and the amount of deformation decreases as the distance from the center increases. The same applies to the side wall 1004-1 facing the 1003-3. Since the capacity change can be increased if the deformation is easily caused by the pressure difference P1-P2 between P1 and P2, the pressure detection sensitivity increases when the thickness of the side walls 1003-3 and 1004-1 constituting the capacity is small.
  • a side wall that does not constitute a capacity in the wall (1003-4 and 1003-5 in the first surface groove O1, In the first surface groove O2, the thickness of 1004-4 and 1004-5) is preferably larger than the side walls 1003-3 and 1004-1 constituting the capacitor. This is because, when the first surface groove O and the second surface groove are formed, the side wall that does not constitute the capacity can increase the process margin and can be more difficult to break than the side wall that constitutes the capacity. Further, if these are difficult to be deformed, the side walls 1003-3 and 1004-1 that effectively constitute the capacitor are easily deformed.
  • the bottom wall and the top wall are also preferably thicker for the above-mentioned reasons, but there is also a reason that it is better to make the etching margin as large as possible when forming by etching. Of course, if it can be formed accurately, it does not need to be so thick.
  • FIGS. 2D and 2E show the cross-sectional states of A1-A2 when P1> P2 and P1> P2.
  • the side walls 1003-1, 1003-3, 1004-1, and 1004-3 are in the direction of the second surface groove Q (Q1, Q2, Q3).
  • the side walls 1003-3 and 1004-1 are supported by the side walls 1003-4 and 1003-5, and 1004-4 and 1004-5, so the side walls 1003-3 and 1004-1 are supported.
  • the bulge of the center part of this becomes convex shape larger than other parts.
  • the bulge becomes larger than other parts. Even in the direction perpendicular to the paper surface, the side walls 1003-3 and 1004-1 are supported by the side walls 1003-4 and 1003-5, and 1004-4 and 1004-5, so the side walls 1003-3 and 1004-1 are supported.
  • channel O side) of the center part becomes a convex shape (to the 1st surface groove
  • the capacity when there is a pressure difference between P1 and P2 is the capacity of a minute portion having a different distance d, and the entire capacity is an integral value thereof.
  • the average distance when P1> P2 is d1, d1 ⁇ d0 and the capacity increases.
  • the first surface grooves O1 and O2 have substantially the same characteristic values (because they are the same material, the Young's modulus E and the Poisson's ratio ⁇ are equal, and the thickness and size of the side wall, bottom wall, top wall, etc. are the same).
  • the side walls 1003-3 and 1004-1 are not destroyed.
  • the breaking strength increases, so that these can also be prevented from being broken due to an increase in the pressure difference P1-P2.
  • a mechanism for preventing the pressure from being applied to the sensor when a pressure difference is generated by setting an upper limit value of the capacity, destruction of the sensor can be surely prevented.
  • this capacity can also be detected using the pressure sensor of the present invention.
  • the first surface grooves O1 and O2 have almost the same characteristic values (because they are the same material, the Young's modulus E and the Poisson's ratio ⁇ are equal, and the thickness and size of the side wall, bottom wall, top wall, etc. are the same).
  • FIG. 2 (c) is a side view of the cut surface at B1-B2 in FIG. 2 (a).
  • the direction of B1-B2 is the longitudinal direction of the first surface groove O2 (O1 on the back side is omitted).
  • the direction of A1-A2 is the horizontal direction.
  • the wall 1004 (1004-2, 1004-4, 1004-5) of the first groove O2 is a conductor, and the upper wall 1000 (1000 -3), but is not electrically connected to the outer upper wall 1000 (1000-1) by the electrically inactive regions I4 and I5.
  • the length (vertical length) of the first surface groove O (O2) is a
  • the width (lateral length) is b
  • the depth (distance from the bottom surface of the top wall to the bottom surface of the groove) is h
  • the bottom wall
  • q3 is the thickness of the side wall 1004-4
  • q1 is the thickness of the side wall 1004-4
  • q2 is the thickness of 1004-5
  • the area S of the electrode constituting the capacitance (a + q1 + q2) * (h + q3)
  • the total capacitance is the sum of the individual capacitances.
  • the capacitance generated in this electrically inactive region I1 is constant. Therefore, it is the capacitance generated between the sidewall electrodes 1003-3 and 1004-1 that contributes to the change in capacitance.
  • FIG. 1 and FIG. 2 show one embodiment of the capacity used in the pressure sensor of the present invention.
  • the present invention is a capacitive pressure sensor using grooves formed from the first surface (upper surface) side and the second surface (lower surface) side in the thickness direction of the conductor substrate.
  • a metal, an alloy, or the like can be used as the conductor substrate.
  • the electrically inactive region can be formed by forming an insulator on a part of the first surface side.
  • the conductor substrate a semiconductor substrate such as silicon having a low resistance in which an impurity element is dissolved in a high concentration can be used.
  • the electrically inactive region can be formed by forming an insulator on a part of the first surface side.
  • it can be formed by oxidizing or nitriding a portion to be an electrically inactive region to form an oxide (insulator), nitride (insulator), or oxynitride (insulator).
  • oxygen or nitrogen can be ion-implanted to form an oxide (insulator), nitride (insulator), or oxynitride (insulator).
  • it can be formed by forming a trench groove in a portion to be an electrically inactive region to fill the insulator, or forming an insulator by oxidation or nitridation.
  • a conductive polymer or conductive rubber can be used as the conductive substrate.
  • the electrically inactive region can be formed by forming an insulator on a part of the first surface side. Since the conductive polymer or conductive rubber contracts or expands by a slight pressure difference, minute pressure fluctuations can be detected. Further, a substrate obtained by epitaxially growing a semiconductor having a low-concentration impurity which is an element of a conductor opposite to the high-concentration impurity element on a low-resistance semiconductor substrate having a high-concentration impurity (for example, a low concentration containing an N-type impurity element at a low An epitaxial layer containing a low-concentration P-type impurity element on a silicon semiconductor substrate (N + substrate) having resistance, or an element having a high-concentration impurity element and a reverse conductor on a low-resistance semiconductor substrate having high-concentration impurities.
  • a composite substrate in which a semiconductor substrate having a low concentration of impurities is bonded can be used.
  • a high concentration region having the same conductor element as the high concentration impurity region is formed on the side wall of the first surface groove and a part of the first surface groove connected to the first surface groove, and the two electrodes forming the capacitance are formed.
  • the high concentration regions formed on the first surfaces to be connected are formed separately from each other. In this way, the low concentration impurity region becomes an electrically inactive region between these electrodes.
  • a bonded substrate can be used as the conductor substrate.
  • a substrate having a high repetitive fatigue strength can be used.
  • FIG. 3A illustrates the structure of a pressure sensor when using a low-resistance Si substrate containing a high-concentration impurity element (P-type or N-type and having an impurity concentration of 10 19 / cm 3 or more) and a method for manufacturing the pressure sensor.
  • P-type or N-type a high-concentration impurity element
  • FIG. 3A illustrates the structure of a pressure sensor when using a low-resistance Si substrate containing a high-concentration impurity element (P-type or N-type and having an impurity concentration of 10 19 / cm 3 or more) and a method for manufacturing the pressure sensor.
  • an insulating film 1102 such as a SiO 2 film is formed on the Si substrate 1101 using an oxidation method, a CVD method, or a PVD method (the thickness is preferably 100 nm to 2000 nm, preferably 500 nm to 1000 nm), the formation region of the isolation region 1110 is opened using a photolithography method, the insulating film 1102 is etched, and a recess is formed in the isolation region 1110 by dry etching or wet etching.
  • the recess is buried with an insulating film such as SiO 2 or SiON film using an oxidation method, a CVD method, or a PVD method.
  • the isolation region 110 has a width d2 and a depth h3. If planarization is required, a coating insulating film forming method such as the SOG method may be used.
  • the insulating film on the Si substrate may be removed, and an insulating film such as a SiO2 film may be formed on the Si substrate again by a CVD method, an oxidation method, or the like.
  • the region O1 to be one concave portion of the pressure sensor is patterned using a photolithography method or the like, the insulating film 1102 is etched (when the insulating film 1102 is present), and the Si substrate is further deeply etched using the RIE method or the like. Etch vertically. (Etching Depth h2) Since this recess O1 determines the thickness y of the Si substrate side wall (becomes a diaphragm), the vertical pattern is as good as possible. In this etching, the Si substrate 1101 is left behind without being penetrated.
  • an insulating film 1103 such as SiO2 is formed on the back surface side of the Si substrate, and the region O2 (the back surface side of the Si substrate) that becomes the other concave portion of the pressure sensor is patterned using photolithography or the like (of course, on the front surface side)
  • a resist or the like is formed in the recess O1 region), the insulating film 1103 is etched (when the insulating film 1103 is present), and the Si substrate is deeply etched and vertically etched using the RIE method or the like.
  • Etching Depth h1 Since this recess O2 determines the thickness y of the Si substrate side wall (becomes a diaphragm), the vertical pattern is as good as possible.
  • the surface of the Si substrate 1101 is left without being penetrated (h5), and reaches the separation region 1110 formed on the surface side, and a part of the separation region 1110 is partially etched in the thickness direction. To do. (In other words, only h3-h5 is etched)
  • a double-sided (mask or reticle) aligner or stepper
  • the alignment accuracy can be further improved by using another method.
  • the first surface groove (the surface (upper surface) of the Si substrate is used as the first surface, and the recess O1 is also referred to as the first surface groove) is formed before or after the first surface groove is formed.
  • the first surface groove the surface (upper surface) of the Si substrate is used as the first surface, and the recess O1 is also referred to as the first surface groove
  • the groove pattern of the first surface can be read from the second surface through the penetrated portion (or the very thinned portion), and can be directly aligned with the first surface groove pattern.
  • the first surface groove pattern used for alignment cannot be used as an actual pattern, but alignment by a stepper is also possible by providing it in various places, so alignment is very accurate. Is possible. Still other methods can be used.
  • a glass substrate is bonded to the second surface side.
  • the glass substrate is bonded to the second surface (lower surface or back surface) side of the silicon substrate. Since it is a glass substrate, anodic bonding is possible and strong bonding can be performed. Alternatively, bonding may be performed by using an adhesive, a heat fusion method, or a room temperature bonding method. The silicon substrate is completely penetrated in the thickness direction when the first surface groove is formed.
  • the glass substrate serves as an etching stopper, so that the thickness in the depth direction of the first surface groove can be controlled with very high accuracy. . Since the pattern of the first surface groove can be accurately read from the second surface side, the photosensitive pattern of the second surface groove can be directly aligned with the first surface groove. As a result, the first surface groove and the second surface groove can be formed with very high accuracy. In this case, when forming the second surface groove, it is necessary to first etch the glass substrate vertically to form the photosensitive film pattern as faithfully as possible. Also in this case, since the materials are different, the silicon substrate can be used as a stopper, and the margin of over-etching is large, so that the silicon substrate can be completely exposed at necessary places over the entire area of the wafer.
  • the Si substrate can be formed with high accuracy in a vertical direction using another etching species (the same etching species may be used depending on conditions), so that it is formed between the first surface groove and the second surface groove.
  • the thickness of the side wall can be formed with very high accuracy.
  • the bottom wall of the first surface groove is a glass substrate.
  • the glass substrate is an insulator, since electricity can be transmitted through the low-resistance silicon on the side wall, there is no particular problem with the capacitance characteristics.
  • the entire glass substrate can be etched and thinned after forming the first surface (through) groove.
  • wet etching can be used, dry etching can be used, and further, BG method (back surface polishing method) and CMP method (chemical mechanical polishing method) can also be used.
  • wet etching accurate etching can be performed using an HF-based etchant.
  • dry etching the glass substrate can be etched with high accuracy using the above-described etching gas such as CF.
  • a quartz substrate, a ceramic substrate, or a plastic substrate can be used. Further, the glass substrate can be bonded (attached) to the Si substrate after the first surface through hole is formed. In this case, the glass substrate is not etched, and the depth of the through hole is the same as the thickness of the Si substrate. Therefore, the first surface through groove having a very accurate depth can be formed.
  • an insulating film 1104 such as SiO 2 is formed on the surface of the Si substrate (or on the insulating film 1102) by an oxidation method, a CVD method, or a PVD method, and the insulating film 1104 (in FIG. (Also acts as a protective film).
  • an insulating film 1105 such as SiO2 is formed on the back surface of the Si substrate (or on the insulating film 1103), and an insulating film 1105 (also acting as a protective film) is laminated in the recess O2 (O2-1, 2, 3). (Or oxidize). In order to improve moisture resistance, a SiON or SiN film may be used.
  • an adhesive or the like is attached to the surface of the Si substrate, an insulating substrate 1130 such as a glass substrate is attached, and the insulating substrate 1130 in the opening portion of the recess O1 and the contact formation region is removed by a photolithography method and an etching method.
  • an insulating substrate 1130 such as a glass substrate having already opened the opening of the recess O1 or the contact formation region may be attached.
  • a contact hole 1132 (1132-1, 2) is formed in the Si substrate 1101 at a flat portion other than the recess O1 in the windowed region of the insulating substrate 1130, and silicide and various metal films (for example, Al, Cu, Ti) are formed. They are stacked and electrically connected to the Si substrate 1101 as a conductor through the contact hole 1132, and the electrodes / wirings 1134 (1134-1, 2) are patterned by photolithography / etching.
  • Adhesive or the like is also attached to the back side of the Si substrate, an insulating substrate 1126 such as a glass substrate is attached, and insulation in the open portion of the recess O2 (O2-1, 2, 3) or contact formation region is performed by photolithography and etching. The substrate 1126 is removed. Alternatively, an insulating substrate 1126 such as a glass substrate having already opened the opening of the recess O2 and the contact formation region may be attached. Further, a contact hole and an electrode may be provided on the back side, and the overall size can be reduced.
  • the insulating substrates 1126 and 1130 such as glass substrates have an effect of reinforcing the thinned Si substrate and preventing deformation due to a pressure difference (difference between the pressure P1 on the front side and the pressure P2 on the back side).
  • a pole (support layer) 1142 may be attached to the insulating substrate 1126 on the back surface, and a protect substrate 1146 having a pressure introducing hole 1147 may be attached to the pole 1142.
  • the protect substrate 1146 is a package that serves to smoothly introduce the pressure P2 from the pressure introduction hole 1147 and protect the sensor.
  • the pole 1142 supports the sensor attached to the insulating substrate (support substrate) 1126 with respect to the protect substrate 1146, and also forms a space between the protect substrate 1146 and the insulating substrate (support substrate) 1126 to smoothly apply pressure. And it guide
  • the pole 1142 is formed by attaching a substrate having a predetermined thickness on the insulating substrates 1126 and 1130 using an adhesive or the like, and etching using a photolithographic method or an etching method. When the insulator substrate is glass, the Si substrate can be firmly attached by anodic bonding. Alternatively, the pole may be attached by aligning the protection substrate with the pole attached in advance to the insulating substrate.
  • the Si substrate thickness h0 is 100 ⁇ m to 1000 ⁇ m
  • the width of O1 (O1-1, 2) is 10 ⁇ m or more
  • the width d1 of O2 (02-1) is 10 ⁇ m to 100 ⁇ m
  • the width of O2 (O2-2, 3) is 10 ⁇ m or more.
  • H1 is 80 ⁇ m to 980 ⁇ m
  • h1 is 80 ⁇ m to 980 ⁇ m
  • h3 is 1 ⁇ m to 50 ⁇ m
  • h4 is 1 ⁇ m to 50 ⁇ m
  • h5 is 1 ⁇ m to 50 ⁇ m
  • y is preferably as small as possible but technically 1 ⁇ m to 15 ⁇ m.
  • the thicknesses of h4 and h5 are 10 ⁇ m or less, it is desirable to reinforce with insulating substrates 1130 and 1126. It is good to make it adhere before etching.
  • the substrate side wall 1101 (1101-3, 4) that contributes to the diaphragm of the pressure sensor, and is deformed by the pressure difference between the pressure P1 of O1 (O1-1, 2) and the pressure P2 of O2-1, and O2
  • the spatial capacity of ⁇ 1 changes.
  • the substrate sidewall 1101-3 is electrically connected to the substrate sidewall 1101-2, and the substrate sidewall 1101-4 is electrically connected to the substrate sidewall 1101-5.
  • the substrate side wall 1101-3 and the substrate side wall 1101-4 are electrically separated by the separation region 1110. Therefore, if a constant voltage is applied between the electrodes 1134-1 and 1134-2, the capacitance between the substrate side wall 1101-3 and the substrate side wall 1101-4 can be measured.
  • the width d2 of the separation region 1110 is 1 ⁇ m to d1, but a capacitance is generated in the separation region itself. Therefore, in order to reduce the contribution to the capacitance of the sensor, the width d2 should be larger.
  • the width of the separation region is determined in consideration of the strength of the separation region.
  • Another insulating film SiO 2, SiON, SiN, etc.
  • electrodes / wirings 1134 are formed, and before or after attaching the insulating substrate 1130, SiO 2 etc. ( An insulating film of SiO2, SiON, SiN, etc.) may be laminated.
  • the thickness of these insulating films is 100 nm to 2000 nm, preferably 500 nm to 1000 nm in consideration of electrical insulation.
  • the thickness of the insulating film on the substrate side wall (1101-3, 4) of the concave portion serving as the diaphragm is If it is too thick, it will affect the capacitance, so 1.0 ⁇ m or less, preferably 0.5 ⁇ m or less, and more preferably 0.2 ⁇ m or less. If there is no need for pollution prevention or protection, an insulating film may be omitted.
  • the thicknesses of the insulating substrates 1130 and 1126 are 30 ⁇ m to 500 ⁇ m to 1 mm, and may be determined based on the size, strength, and usage environment of the PKG.
  • the pole thickness is preferably 10 ⁇ m to 500 ⁇ m
  • the width is 10 ⁇ m to 100 ⁇ m
  • the thickness of the protect substrate 1146 is preferably 30 ⁇ m to 500 ⁇ m to 1 mm.
  • the sensors shown in FIG. 3 (a) may be connected in parallel. Since the sensor of the present invention requires a very small area, a large number of sensors can be connected. Alternatively, the capacity can be controlled by connecting in series. Moreover, since the wiring can be patterned on the surface of the Si substrate using an LSI process, a large number of sensors can be easily connected in parallel. In FIG.
  • O1 (O1-1, 2) and O2 (O2-1) allow pressure to be applied from the outside, but O1 or O2 is closed by an insulating substrate (thin plate, support substrate).
  • FIG. 3B shows a substrate in which a high-resistance silicon semiconductor substrate 1100-1 having a low-concentration impurity element having a reverse conductivity is bonded to a high-concentration impurity element Si wafer (low-resistance wafer) 1100-2.
  • a capacitive pressure sensor having favorable characteristics can also be formed using (also referred to as a composite substrate).
  • this composite substrate for example, a substrate obtained by bonding each semiconductor substrate (bonded substrate), or an epitaxial substrate obtained by epitaxially growing single crystal silicon having a low concentration impurity element of a reverse conductor on a high concentration impurity silicon semiconductor substrate. Can be used.
  • the epi layer 1100-1 has a high resistance (for example, an impurity concentration of 10 13 / cm 3 to 10 17 / cm 3 and a resistivity of 0.1 ⁇ cm or more), and has a conductivity type opposite to that of the low resistance substrate 1100-2. Even if a conductor film is formed by opening a contact hole as shown in FIG. 3 (a), the low resistance region (for example, impurity concentration of 10 19 / cm 3 or more and resistivity of 0.01 ⁇ cm or less) 1100-2 is electrically Not conducting.
  • a conductor film for example, impurity concentration of 10 19 / cm 3 or more and resistivity of 0.01 ⁇ cm or less
  • the impurity element is a group V element such as arsenic (As), phosphorus (P), antimony (Sb), and the impurity concentration is, for example, about 10 19 / Above 3 cm, the resistivity is about 0.01 ⁇ cm or less.
  • the impurity element is a group V element such as boron (B), aluminum (Al), and the impurity concentration is, for example, about 10 19 / Above 3 cm, the resistivity is below about 0.02 ⁇ cm.
  • the impurity concentration is, for example, about 10 17 / cm 3 or less (preferably, about 10 16 / cm 3 or less), and the resistivity is about 0.1. 1 ⁇ cm or more (preferably about 0.7 ⁇ cm or more).
  • the impurity concentration is, for example, about 10 17 / cm 3 or less (preferably, about 10 16 / cm 3 or less), and the resistivity is about 0.1. 3 ⁇ cm or more (preferably about 1 ⁇ cm or more).
  • a necessary portion is opened using a photolithographic method, and the same impurity element as the conductor type of the low resistance region is reduced from the surface of the epi layer 1100-1 and the upper portion of the opening of the recess O1.
  • necessary heat treatment activation process at 900 ° C. or higher is performed to form the low resistance diffusion layer 1108 (1108-1, 2).
  • the electrode / wiring 1134 can be electrically connected to the low resistance region 1100-2 through the low resistance diffusion layer 1108 (1108-1, 2), Capacitance can be detected. Since ions may be implanted into the substrate side wall region from the upper part of the opening of the recess O1 to a depth of about 50 ⁇ m, the substrate 1101 may be tilted with respect to the ion implantation direction.
  • the width of the opening is 20 ⁇ m, if the angle (relative to the normal of the substrate surface) is made smaller than about 22 degrees (however, since the ions are not implanted into the substrate side at 0 degrees, it is larger than 0 degrees), 50 ⁇ m or more. Ions enter to the depth. In particular, if rotary ion implantation is used, ions can be implanted into the entire upper portion of the substrate side wall of the recess O1. When ion implantation is performed through an insulating film or the like, an acceleration voltage for ion implantation is selected in consideration of the thickness of the insulating film.
  • the insulating film 1102 in the region where the low-resistance diffusion layer 1108 (1108-1, 2) is to be formed is removed, and a predeposition (for example, BCl3 or POCl3) is used as a semiconductor substrate (wafer).
  • Insulating film (P + (P-type high-concentration Si layer) is a BSG film, N + (N-type high-concentration Si layer) by CVD or the like containing a high-concentration impurity)
  • the low resistance diffusion layer 1108 (1108-1, 2) can be formed by heat treatment after forming the PSG film.
  • contact holes 1132 (1132-3, 4) are formed in the insulating film 1103 and the insulating substrate 1126, and A conductor film 1133 (1133-3, 4) is formed in the portion, and further electrodes / wirings 1134 (1134-3, 4) are formed, so that the low resistance region 1100-2 is not formed without forming an ion implantation layer. Can be electrically connected. Even in this case, if an ion implantation layer is formed, an epi layer can also be used as a sensor region.
  • the depth h1 of the recess O2 from the back surface only needs to reach the epi layer 1100-1
  • the depth h3 of the isolation region may be shallower than the thickness h7 of the epi layer, and a high resistance is formed below the isolation region 1110.
  • An epi layer may be present. (However, a low resistance layer is not present.)
  • the isolation region 1110 may be diffusion isolation or LOCOS isolation in addition to the trench isolation shown in FIG.
  • diffusion separation can be achieved by forming an inversion prevention layer of the same impurity element as that of the low resistance substrate immediately below the insulating film 1102, or LOCOS may be formed.
  • FIG. 3C is a diagram showing the structure of the pressure sensor of the present invention when using a high-resistance (impurity concentration of about 10 17 / cm 3 or less) Si substrate used for LSI fabrication and a method for manufacturing the same.
  • ion implantation of an impurity element having a conductivity type opposite to the conductor type of the Si substrate 1101 is performed on the front side and the back side of the Si substrate 1101. .
  • a region where ion implantation is not desired is masked using photolithography or the like.
  • the recesses O1 and O2 are deep vertical holes, and the angle of inclination of ion implantation is set with respect to the substrate surface in order to implant ions into the side surfaces (surfaces) of the substrate side walls (eg, 1101-2, 3, 4, 5). Tilt the ion implant.
  • the ion implantation layers 1112 (1112-1, 2) and 1113 (1113-1, 2) formed by heat treatment are brought into contact with the substrate side wall, the bottom of the recess, or the surface of the substrate. Acceleration energy of ion implantation and heat treatment conditions (temperature, time) are appropriately selected and contacted. You may make the board
  • contact holes and the like are also formed in the insulating substrate (support substrate) 1126.
  • the insulating substrate (support substrate) 1126 in this region is removed, the insulating film It is possible to reduce the aspect ratio by forming a contact hole in 1103.
  • the electrodes and wirings 1134-1 and 1134-2 on the surface of the substrate 1101 are connected, or the ion implantation layer is formed.
  • the capacitance of the pressure sensor can be measured through the electrodes / wirings 1134-3 and 1134-4 on the back surface of the substrate 1101.
  • a method of attaching a semiconductor substrate (A substrate) such as a Si substrate to an adhesion substrate (B substrate) such as a semiconductor substrate, an insulating substrate such as a glass substrate or a ceramic substrate, or a plastic substrate will be described.
  • a support substrate (C substrate) is attached to the B substrate using an adhesive layer (D adhesive layer).
  • D adhesive layer is an adhesive layer made of a thermoplastic adhesive resin that adheres firmly at a temperature Td-1 and loses adhesiveness at Td-2 (Td-2> Td-1).
  • the E adhesive layer is a thermoplastic adhesive resin that adheres firmly at a temperature Te-1 (Te-1 ⁇ Td-2) and loses its adhesiveness at Te-3 (Td-2 ⁇ Te-3), or a temperature Te.
  • Te-1 Te-1 ⁇ Td-2
  • Te-2 ⁇ Td-2 is an adhesive layer made of thermosetting resin that adheres firmly.
  • the temperature is set to Te-2 or higher and Td-2 or lower to attach the B substrate (with C substrate) to the A substrate, and then the temperature is set to Td-2 or higher. The substrate is pulled away from the B substrate.
  • the substrate B is attached to the A substrate at a temperature of Te-1 or higher and Td-2 or lower, and then the temperature is Td-2 or higher. Pull the C substrate away from the B substrate at a temperature of 3 or less. Since there are many such adhesives, they can be selected as appropriate. When there is no pattern on the A substrate, the B substrate can be bonded roughly, but when there is a pattern on the A substrate and the adhesive layer pattern adhered on the B substrate is aligned with the pattern, alignment is necessary. For example, when a through hole is already formed in the A substrate and it is not desired to put an adhesive layer in the through hole.
  • An adhesive layer can be formed by an application method (spray method, spin coating, dip, etc.), screen printing, an adhesive sheet adhesion method, or the like.
  • an adhesive layer For patterning of the adhesive layer, a photolithographic method (when the adhesive has photosensitivity), a stamp method, a screen printing method, or the like can be used.
  • an adhesive layer that can be cured or peeled off by irradiation with light (electromagnetic waves)
  • the B substrate can be attached to the A substrate and the C substrate can be separated without much consideration of the above temperature range.
  • the C substrate when the D adhesive layer can be peeled off by light irradiation, the C substrate can be separated from the B substrate by light irradiation after attaching the B substrate (with the C substrate) to the A substrate.
  • the E adhesive layer is a photo-curing adhesive layer, the temperature Te-1 or Te-3 need not be considered, and the heat treatment process becomes simple.
  • the A substrate is a Si substrate and the B substrate is a glass substrate, anodic bonding or room temperature bonding can be used.
  • the bonding temperature is Tp
  • the D adhesive layer such that Tp ⁇ Td-2
  • the C substrate can be separated after the A substrate and the B substrate are bonded to the temperature Td-2 or higher.
  • the B substrate and the C substrate are vacuum-adsorbed or electrostatically adsorbed, there is no need to consider the heat treatment temperature of Td-1 or Td-2.
  • the B substrate is made of various magnetic materials such as ferrite, iron, nickel, cobalt, and composites thereof
  • an electromagnet substrate can be used as the C substrate, and if energization is stopped after the A and B substrates are attached, The C substrate can be easily separated.
  • a photocurable resin is used as the E adhesive layer, the heat treatment process can be reduced or eliminated at all. Even when the B substrate is thin, it can be attached to the A substrate with high accuracy by using the present invention.
  • the B substrate When the thickness of the B substrate is 200 ⁇ m or less, it becomes difficult to adhere to the A substrate alone. Therefore, after attaching the B substrate to the C substrate, the B substrate is thinned (for example, 100 ⁇ m or less, 50 to 5 ⁇ m or less by using CMP, dry aging, WET etching, a normal BG (Back Grind) method) The thin B substrate can be attached to the A substrate.
  • the insulating substrates 1130 and 1126 open the entire recess opening. However, if pressure (P1 or P2) is quickly transmitted to the recess, only a part of the recess opening may be opened. good. If the opening of the recess is narrowed by the insulating substrates 1130 and 1126, entry of contaminants, moisture, foreign matter, etc. into the recess can be prevented. Furthermore, since the entrance of the recess can be regulated by the insulating substrates 1130 and 1126, fluctuations in the upper and lower parts of the recess due to pressure fluctuations can be prevented, so that more accurate capacity changes can be detected and the reliability and life of the pressure sensor are increased. Can do. FIG.
  • FIGS. 3D is a plan view of the cross-sectional structure diagram shown in FIGS. 3A to 3C (cross section near the center of the recess).
  • the longitudinal sectional views of A1-A2 in FIG. 3 (d) are FIGS. 3 (a) to 3 (c).
  • the substrate side wall (1011-2, 3, 4, 5, 7, 8, 9, 10, etc.) surrounding the recess O1 and the substrate side wall 1101 (1101-1, 6, 11, 12, etc.) surrounding the recess O2 are Since the upper part of the substrate (for example, 1101-7 in FIG. 3A) and the lower part are connected by the insulating substrate 1126, these are fixed as an integrated object.
  • the substrate side wall (1011-2, 3, 4, 5, 7, 8, 9, 10, etc.) surrounding the recess O1 and the substrate side wall 1101 (1101- 1, 6, 11, 12, etc.) are completely electrically separated. Accordingly, the recess O2 (O2-1) becomes a capacitive space, and the capacitance can be detected between the substrate side wall 1101-3 and the substrate side wall 1101-4. Further, an isolation region is formed in a part of the substrate side wall 1101 (1101-7, 8, 9, 10) (for example, a diffusion layer having a different conductivity type is manufactured by forming an insulating film in this region).
  • the recess O1 also becomes a capacitance space, and the capacitance can be measured between the substrate side wall 1101-2 and the substrate side wall 1101-3, and between the substrate side wall 1101-4 and the substrate side wall 1101-5. , Can increase sensitivity.
  • the substrate side wall 1101 (1101-1, 6, 11, 12, etc.) surrounding the recess O1 is the outer outer wall (protective member) of the pressure sensor PKG. Therefore, the substrate side wall 1101 (1101-1, 6, 11, 12, etc.) has a certain thickness (for example, 50 ⁇ m or more, preferably 100 ⁇ m or more), or is not deformed by pressure or does not change by external force.
  • the upper portion is made stronger by the insulating substrate 1130 (further including the protect substrate), and the lower portion is made stronger by the insulating substrate 1126 (further including the protect substrate 1146).
  • Pressure sensor PKG is a wafer level PKG, and a PKG having a simple process, inexpensive, ultra-small and highly reliable can be manufactured.
  • the sensitivity can be increased by connecting capacitors in parallel, and the capacitors can be mounted on the same chip as the IC. Since bumps can be formed on the electrodes and wirings, flip chip mounting is also possible. Since electrodes and wiring can be easily formed on both the front and back of the chip, the degree of freedom of chip (PKG) mounting is also increased.
  • Wmax is about 600 z / y 3 ( ⁇ m) (z is expressed in Mpa units, y is in ⁇ m units), z is 1 Mpa (about 1 atm), and y is 3 ⁇ m.
  • the substrate side wall (corresponding to a diaphragm) is, for example, an insulating substrate on the top and bottom, and in the lateral direction, for example, another substrate side wall connected to the substrate side wall (diaphragm) in the case of a rectangular shape.
  • FIGS. 4A to 4C show a bonded substrate (epi wafer, hereinafter referred to as a composite substrate) in which a low concentration wafer (epitaxial layer) 11202 having a different conductivity type is attached (grown) on a high concentration substrate (wafer) 11201.
  • a figure which shows the structure and manufacturing method of the pressure sensor which formed the 1st surface penetration groove
  • An insulating film 11204 such as a SiO2 film is laminated on the first (front) surface of the composite substrate 11200, and an insulating film 11203 such as a SiO2 film is laminated on the second (back) surface, and the first (front) surface is formed by ion implantation and heat treatment.
  • An inversion prevention layer 11205 is formed on the surface of the substrate.
  • the impurity concentration of the low-concentration layer 11202 is low (about 1 to 5 ⁇ 10 16 / cm 3 or less)
  • a diffusion layer about 1 to 5 ⁇ 10 16 / cm 3 to 10 19 / cm 3 . Therefore, they are the same conductor type.
  • patterning for forming a first surface through groove (hole) is performed on the first surface by photolithography, and the insulating film 11204 and the composite substrate 11200 are vertically etched, and the first surface is perpendicular to the first surface and the second surface.
  • Through grooves (holes) R (R1, R2) penetrating from the surface to the second surface are formed.
  • M M1, M2 which is a region for forming a contact hole connected to a high concentration substrate on the substrate side wall or a region on the side surface of the substrate side wall which is a low concentration wafer region of the first surface through groove is a photosensitive film (photograph). Open a window of a resist film or a photosensitive sheet.
  • a positive resist When using a photoresist such as spin coating or dip, a positive resist is used, and light may be irradiated to a place where the resist should be left (for example, on the first surface through groove).
  • This ridge portion H (H1, H2) hangs down on the upper part of the first surface through groove by heat treatment (for example, 100 ° C. to 200 ° C.) and covers the side surface of the substrate side wall.
  • the insulating film 11204 in the region where the window is opened and there is no photosensitive film is removed.
  • silicon is exposed in the region M and the upper portion of the first surface through groove, particularly in the low concentration wafer region.
  • the photosensitive film is removed, and a high-concentration diffusion layer (of a low-concentration wafer) is formed on the side surface of the substrate side wall of the M region and the first surface through-groove by predeposition or the like (including a laminated insulating film including impurities) + heat treatment 11207 is formed.
  • P + diffusion layer such as B or N + diffusion layer such as P, As, Sb, etc.
  • the diffusion layer 11207 can also be formed by ion implantation + heat treatment.
  • the insulating film 11204 may not be removed. (It is sufficient that the film thickness is not more than a certain thickness calculated by ion implantation acceleration energy.) Further, it is sufficient if the high-concentration diffusion layer 11207 can be formed to a depth in contact with the high-concentration substrate region of the first surface through groove. .
  • an insulating film 11208 such as a SiO2 film covering the inner surface of the first surface through groove and covering the exposed surface of the first surface is laminated by a CVD method, a PVD method, or an oxidation method. .
  • a SiON film or a SiN film is preferable for improving the moisture resistance.
  • the thickness of the insulating film is preferably about 500 nm or more on the first surface and about 50 nm or more on the side surface of the first surface through groove.
  • an insulating substrate 11209 such as a glass substrate, a ceramic substrate, or a plastic substrate is attached to the second (back) surface by a method using an adhesive, diffusion bonding, room temperature bonding, or the like.
  • the insulating film 11023 on the back surface is removed to expose the Si substrate 11201 and can be firmly bonded by anodic bonding. Note that when the insulating film is a SiN film, anodic bonding with a glass substrate is possible even when the insulating film is a SiO2 film and PolySi is laminated thereon.
  • a photosensitive film pattern 11211 is formed to form a second surface recess.
  • the alignment accuracy is improved.
  • the patterns 1121-2 and 3 for measuring the capacitance and the through holes R1 and R2 are accurately aligned.
  • the insulating substrate 11209 is etched using the photosensitive mask pattern 11211 (11211-1, 2, 3, 4) as a mask, the insulating film 11203 is further etched, the Si substrate 11200 is further etched, and the second surface is etched.
  • the insulating substrate 11209 has a thickness of 1 ⁇ m to 100 ⁇ m. As described in the substrate attachment method, after attaching a thick insulating substrate 11209 to another substrate (support substrate), the thickness is reduced to a desired thickness by CMP or the like. Then, after attaching to the second surface of the composite substrate 11200, the support substrate may be separated.
  • insulating substrate 11209 is attached to the second surface of the composite substrate 11200, it is thinned to a desired thickness with CMP or the like.
  • there is a method of thinning only the second surface concave portion formation region and the first surface concave portion (through hole) formation region (masking other regions and thinning by dry etching or wet etching).
  • the insulating substrate 11209 (11209-2, 3) at the bottom of the first surface through hole R does not adhere to the insulating substrate 11212, and the first surface through hole R floats.
  • the first surface through-grooves (R1, R2) are less susceptible to external impacts and vibrations, and the accuracy of the capacitive element is improved.
  • the etching amount of the insulating substrate 11209 on the second surface recess is reduced when the second surface recess is formed, so that the second surface recess etching can be performed with high accuracy.
  • All of the high concentration substrate 11201 region is etched and ends in the middle of the low concentration region 11202. Etching with as little variation as possible is better, and it is desirable to stop etching when the low concentration region is reached.
  • an insulating film 11221 such as a SiO 2 film is laminated on the inner surface of the second recess as a protective film.
  • a SiON film or a SiN film is preferable for improving the moisture resistance.
  • the thickness may be 100 nm or more.
  • an insulating film is laminated, and an insulating substrate 11216 such as a glass substrate, a ceramic substrate, or a plastic substrate is attached using an adhesive or the like, and necessary windows are opened.
  • an insulating substrate 11216 such as a glass substrate, a ceramic substrate, or a plastic substrate is attached using an adhesive or the like, and necessary windows are opened.
  • contact hole 11214 (11214-1) is formed in insulating film 11208 and 11204 to form a conductor film.
  • the electrodes and wiring 11215 (11215-1) are formed by stacking.
  • a contact hole 11214 (11214-2) may be formed from the insulating substrate 11216, and a conductive film may be stacked to form an electrode / wiring 11215 (11215-2).
  • a contact hole having a size of about 20 ⁇ m may be formed. Since the aspect ratio is about 10, there are no problems such as etching selectivity and conductor film coverage. There is almost no problem with the increase in the chip size.
  • the diffusion layers 11207-2 and 3207 may be extended in the vicinity of the through hole above the formation region of the second recess Q1. Although the sensor sensitivity is slightly reduced, the pressure fluctuation due to this is not a division that increases, so it is sufficient to design in consideration of the decrease.
  • An insulating substrate insulating substrate 11212 such as a glass substrate, a ceramic substrate, or a plastic substrate is attached to the second surface side using an adhesive or the like to protect and strengthen the second surface side.
  • a pressure transmission hole 11213 is provided so that pressure can be transmitted to the sensor detection recess Q1.
  • R or Q is not opened, and the pressure in R or Q is kept constant.
  • y3 and y4 should be about 3 ⁇ m to 20 ⁇ m, and the thickness variation should be suppressed to 10% or less, preferably 5% or less.
  • the thicknesses y2 and y5 of the substrate side walls 1120-2 and 11200-5 may be thick, and the variation may be larger.
  • the bottom surface of the substrate side wall 11200-2 or 11200-5 (high-concentration substrate) is passed through the insulating substrate 11212 and the insulating substrates 11209-2 and 11209-3 on the second surface side. It is also possible to form electrodes and wiring by forming contact holes.
  • the insulating substrate 11212 is opened in the portions of the insulating substrates 11209-2 and 11209-3, and contact holes and electrode wirings are formed on the insulating substrates 11209-2 and 11209-3, the aspect ratio becomes small and a small contact Holes and electrode wiring can be produced.
  • the chip size can be made smaller than when the electrode wiring is formed on the first surface side.
  • the thickness of the high-concentration substrate 11201 corresponds to the depth of the substrate side wall, the sensor accuracy is very good without depending on the etching variation of the first through hole R and the second recess Q. Since the inversion prevention layer is also formed on the low concentration substrate 11202, electrical separation between the electrodes 11200-3 and 11200-4 is sufficient.
  • the substrate side walls 11200-1 and 11200-6 on both sides are protective walls of the sensor chip.
  • the width of the photosensitive film patterns 11211-1, 4 is controlled to etch the composite substrate 11200 outside the substrate sidewalls 11200-1 and 11200-6 when forming the second surface recess Q. Keep it thin.
  • the insulating substrates 11216 and 11212 are also opened at the same time. Further, if a contact hole is formed at the same time when the contact hole is formed and the conductor film is removed from this portion, only a part of the low concentration substrate 11202 is obtained at the time of dicing. However, if the strength of the entire wafer cannot be maintained by this alone, for example, only the substrate 11212 can be left.
  • FIG. 4D is a diagram showing a sensor structure and a manufacturing method thereof when the low-concentration substrate 11202 exists on the upper surface of the high-concentration substrate 11201 and the low-concentration substrate 11230 exists on the lower surface.
  • the same structures as those shown in FIGS. 4A to 4C are given the same numbers.
  • the first-surface recesses R (R1, R2) are etched vertically, but a semiconductor substrate 11200 (a substrate with 11202 bonded to the upper surface and 11230 bonded to the lower surface, or a low-concentration epitaxial layer on both surfaces of the 11201 is grown.
  • a semiconductor substrate 11200 a substrate with 11202 bonded to the upper surface and 11230 bonded to the lower surface, or a low-concentration epitaxial layer on both surfaces of the 11201 is grown.
  • (Recessed epitaxial substrate) is a recess (vertical groove) formed by finishing etching when reaching the lower substrate 11230. Therefore, it does not penetrate the lower surface of the semiconductor substrate 11200.
  • the inversion prevention layer 11205 and the impurity diffusion layer 11207 are formed on the low concentration substrate 11202 above the semiconductor substrate 11200.
  • the bottom of the first surface recess R is a low-concentration substrate 11230 (conductivity type opposite to that of the high-concentration substrate 11201), but an impurity diffusion layer may be formed on the bottom, but the substrate sidewalls may be formed even if not formed. There is no problem because it is connected with a high concentration substrate.
  • the impurity concentration of the low-concentration substrate 11230 is preferably high to some extent (for example, 10 16 / cm 3 to 10 19 / cm 3 ) so as not to be inverted (the active element is not formed therein).
  • the second surface recess Q is formed by aligning the mask with the first surface recess R. Unlike FIGS.
  • the photosensitive film may be patterned after an insulating film is formed on the second surface of the composite substrate 11200.
  • After forming the second surface recess Q it is desirable to form the inversion prevention layer 11210 on the portion exposed to the second surface recess Q side of the low concentration substrate 11202 (may be after the insulating film 11221 is formed).
  • An insulating film 11221 such as a SiO 2 film is laminated as a protective film on the inner surface of the second surface recess Q and the second surface of the composite substrate 11200 by a CVD method, a PVD method, or an oxidation method.
  • the contact hole 11214, the electrode / wiring 11215, and the insulating substrate 11216 are formed on the first surface in the same manner as in FIGS. 4A to 4C.
  • An insulating substrate 11212 is attached to the second surface side, and necessary window opening 11213 is performed. Note that the insulating film on the second surface of the composite substrate 11200 may be removed, and the glass substrate 11212 may be firmly bonded by anodic bonding. In this embodiment, the depth of the diaphragm is approximately equal to the thickness of the high concentration substrate 11201.
  • the insulating substrate 11209 it is not necessary to attach the insulating substrate 11209, it is not necessary to etch the insulating substrate 11209 when forming the second surface recess, and the Si substrate is etched, so that the second surface recess can be formed with high accuracy. Further, since no bonding is used in the sensor drive section (the first surface recess does not penetrate the composite substrate. The insulating substrate 11209 is not used), the reliability increases.
  • FIG. 6 shows another embodiment of the present invention.
  • FIG. 6 is a perspective view of a cross section in the width direction of the capacitive element of this embodiment.
  • the through groove formed in the conductor substrate 2002 is closed from the top and bottom (first surface and second surface) with an insulating substrate to create a sealed space that does not communicate with the outside other than the pressure transmission hole to transmit pressure.
  • This is a space capacitive element in which the side walls deformed by the pressure from the holes are both side electrodes.
  • Through holes W (W1, W2, W3) and V (V1, V2) are formed in the conductor substrate 2002, the second substrate 2006 is adhered to the upper surface (first surface) of the conductor substrate 2002, and the conductor substrate A third substrate 2004 is bonded to the lower surface (second surface) of 2002.
  • the conductor substrate is also referred to as a first substrate.
  • the through-grooves W (W1, W2, W3) and V (V1, V2) formed in the conductor substrate 2002 have side surfaces defined by the sidewalls of the conductor substrate 2002.
  • the upper portion is formed by the second substrate 2006 (the upper surface (first surface) of the through groove becomes the second substrate 2006), and the lower portion is formed by the third substrate 2004 (the lower surface (the second surface) of the through groove is therefore formed by the second substrate 2006).
  • 3 substrate 2004 which is an enclosed closed space.
  • the side wall 2002-3 that separates the through groove W (W1) and the through groove V1 and the side wall 2002-4 that separates the through groove W (W1) and the through groove V2 have the same pressure in the through grooves W1, V1, and V2.
  • the side wall 2002-3 and the side wall 2002-4 become opposite side electrodes, and the space W (W1) sandwiched between the side walls 2002-3 and the side wall 2002-4 (through groove). ) Is a capacitance space.
  • a pressure transmission hole T (T1) is formed in the third substrate 2004 bonded to the second surface side in the through groove W1, and the pressure P2 on the second surface side (from the lower side of the third substrate 2004) is applied to the pressure transmission hole T. It is applied to the inside of the through groove W1 through (T1).
  • pressure transmission holes S (S1, S2) are formed in the second substrate 2006 bonded to the first surface side, and the pressure P1 on the first surface side (from above the second substrate 2006) is It is applied to the inside of the through grooves V1 and V2 through the pressure transmission holes S (S1, S2). Accordingly, the side walls 2002-3 and 2002-4 are deformed by the pressure difference between the pressure from the through groove W1 and the through grooves V1 and V2.
  • the inter-electrode distance d changes, and the capacitance C changes.
  • T (T1) is not formed, the through groove W1 is completely sealed, so that the internal pressure is constant, and d changes due to the difference between this pressure and the pressure P1 of V1 and V2, and the capacitance also Change.
  • S1 and S2 are not formed, the through grooves V1 and V2 are completely sealed, so that the internal pressure is constant, and d changes due to the difference between this pressure and the pressure P2 of W1.
  • the capacity also changes.
  • the deformation rate varies with the same pressure difference depending on the thickness of the side walls 2002-3 and 2002-4. If the thickness is small, the deformation rate increases.
  • the thickness of the thinner one is limited to about 3 ⁇ m (when the etching amount is about 300 ⁇ m). Thin sidewalls could be realized. It seems to be possible even at 1 ⁇ m or less.
  • the breaking strength of the side walls is also reduced, so the pressure to be used needs to be considered.
  • a thick side wall has a small deformation amount and poor sensitivity, so that it is difficult to detect a small pressure difference. Therefore, it is necessary to change the thickness of the side wall depending on the working pressure.
  • the material of the conductor substrate is also important. In the case of increasing the deformation amount with a small pressure, it is preferable to use a material having a small Young's modulus.
  • the Young's modulus of the high-concentration impurity silicon semiconductor substrate is about 100 GPa to 200 GPa (with crystal orientation dependence), copper and titanium are about 100 GPa to 130 GPa, tungsten is about 400 Pa, aluminum alloy is about 70 GPa, and the conductivity is The polymer is about 0.2-5 GPa and the conductive rubber is about 0.01-0.1 GPa. Carbon nanotubes are about 1000 GPa and steel is about 200 GPa.
  • a conductor that can be used as an electrode can be used as the conductor substrate 2002. From the viewpoint of processing performance, silicon can be processed with good accuracy at present, but other conductor materials may be used.
  • the conductive rubber and the conductive polymer have a very small Young's modulus, minute pressure fluctuations can be detected. Carbon nanotubes are suitable for detecting high pressure because of their large Young's modulus. Note that even if a semiconductor or insulator substrate having low conductivity is formed, a conductive film is laminated on the side surface of the through groove after the through groove is formed, and the conductive film on the unnecessary side surface (if there is a bottom surface) is conductive by photolithography and etching. If the body film is removed, a pressure sensor can be produced with the structure of this embodiment.
  • a side wall 2002-3 of the conductor substrate 2002 is an electrode of a capacitor element, but is not electrically connected to the opposing electrode 2002-4.
  • the side wall 2002-3 is connected to the other opposite side wall 2002-2 with the through groove V therebetween.
  • the through groove V1 has a side wall 2002-3, a side wall connected to the side wall 2002, a side wall connected to the side wall 2002-2, and a side wall existing on the side thereof (this side wall is a cross-sectional side of the perspective view).
  • the side wall thereof is connected to the side wall 2002-3, and the through groove V1 is surrounded by these side walls. Since all of these side walls are the conductor substrate 2002, they are naturally electrically connected (in short, they are integrated).
  • the outside of these side walls is a space (W1 and W2 are connected and the entire space is W), the conductor substrate is lost, and the upper and lower second substrates 2006 and third substrate 2004 are used. It is supported.
  • the third substrate 2004 and the second substrate 2006 and their side walls are not electrically connected.
  • the second substrate 2006 and the third substrate 2004 are not necessarily insulating substrates, but are not electrically connected to the conductor substrate 2002. That is, when the second substrate 2006 and the third substrate 2004 are conductor substrates or semiconductor substrates, it is necessary to interpose an insulator in a portion to be bonded to the conductor substrate 2002. In order to ensure that the conductor substrate 2002 is not connected to the second substrate 2006 and the third substrate 2004, it is better that the second substrate 2006 and the third substrate 2004 are insulators.
  • the second substrate 2006 and the third substrate 2004 are made of glass, quartz, or transparent plastic that is an insulator, they are transparent.
  • the outer space of the side wall connected to the side walls 2002-3 and 2002-2 is the same as the space of the through grooves W (W1) and W (W2), has the same pressure, and has a pressure transmission hole T (T1). Then, the pressure becomes the same as the pressure P2 on the second surface side. Accordingly, like the side wall 2002-3, the other side walls also receive the internal pressures P1 and P2 of the groove V1. Other side walls may be deformed in the same manner as the side wall 2002-3.
  • the thickness of the side wall connected to the side of the side wall 2002-3 is preferably slightly thicker than the side wall 2002-3.
  • the side wall 2002-2 facing the side wall 2002-3 may be considerably thick. Increasing the thickness of the side wall 2002-2 (here, it is better to say the width in order to distinguish from the substrate thickness) increases the adhesive strength between the capacitor element and the second substrate and the third substrate. You can also However, if the thickness is too large, the size of the sensor increases. Therefore, it is preferable to determine the thickness in consideration of the overall balance.
  • a contact hole 2008 (2008-1) is formed in the second substrate 2006 bonded to the side wall 2002-2 of the capacitor element, and a conductor film 2010 is laminated on the second substrate 2006, and the contact hole 2008-1 is formed.
  • An electrode / wiring 2010 (2010-1) is patterned and formed so as to cover it.
  • This electrode / wiring 2010 (2010-1) is connected to other electrostatic capacitance elements or external elements (for example, IC, transistor, resistor, inductor, capacitor, etc.).
  • the through groove V2 is surrounded by the side wall on the lateral side connected to the side wall electrode 2002-4 and the side wall 2002-5 connected thereto.
  • the through groove V2 is a completely closed space.
  • the pressure transmission hole S2 is opened in the second substrate 2006
  • the pressure P1 on the second surface side that is, the outside of the second substrate 2006 is transmitted from the pressure transmission hole S2 to the inside of the through groove V2.
  • the pressure P1 is applied to the inner wall 2002-4 of the through groove.
  • the side wall 2002-4 is deformed by the differential pressure between the internal pressure P2 of the through groove W1 and the internal pressure P1 of the through groove V2, and as a result, the inter-electrode distance d between the electrodes 2002-3 and 2002-4 is changed.
  • the capacitance due to 2002-3 and 2002-4 changes. Since the side wall electrode 2002-5 and the side wall 2002-4 are integrated, they are electrically connected. A contact hole 2008 (2008-2) is opened in the second substrate 2006 attached to the side wall 2002-5, and an electrode / wiring 2010 (2010-2) is formed there. Capacitance can be detected from these two electrodes 2010-1 and 2010-2.
  • the through groove V2 is isolated by the side walls such as the side wall electrode 2002-4 and the side wall 2002-5, and the side wall electrode 2002-4, the side wall 2002-5 and the like surrounding the through groove V2 are not formed on the other conductor substrate 2002. Not connected.
  • the side wall conductor substrate 2002 including the side wall electrode 2002-4, the side wall 2002-5, and the like is surrounded by the space W including the through grooves W1 and W3. Accordingly, the through groove W (W1, W2, W3) is one connected space.
  • the pressure transmission holes T (T2, T3) are also formed in W2 and W3. However, if the pressure is rapidly transmitted to the through grooves W (W1, W2, W3), the pressure transmission hole is 1 Any one is acceptable.
  • the pressure transmission holes T are only in one part of the third substrate 2004, and most of them are continuous. (It should be noted that the pressure transmission hole T may be made large if there is no problem in terms of contamination and strength.)
  • the pressure transmission hole S (S1, S2) is only a part of the second substrate 2006. Most of them are continuous. (It should be noted that the pressure transmission hole S may be opened large if there is no problem in terms of contamination and strength.)
  • the conductor substrate 2002 is separated everywhere, but its upper and lower surfaces are Since they are firmly attached to the second substrate 2006 and the third substrate 2004, they are not separated even if a large pressure difference occurs.
  • one capacitive element is formed by 2006-1 to 2006-5, this can be considered as one mounting unit. That is, one capacitive pressure sensor (detection element).
  • -4 and the conductor side wall (2002-5, etc.) integrated therewith are surrounded by the through groove W, and this through groove W is surrounded by the outer conductor side wall 2002 (2002-1, 2002-6, etc.). It is.
  • the through groove W is a closed space whose upper surface is closed by the second substrate 2006 and whose lower surface is closed by the third substrate 2004 and is not connected to the external environment other than the pressure transmission holes T (T1 to T3).
  • the through-grooves (V1 and V2, or W1, W2, W3) of the conductor substrate 2002 if the through-grooves V3 and V4 are formed so as to surround this capacitive element, the conductor substrate 2002 will have one of these. Each capacitive element is separated. Even in this manner, the conductor substrate 2002 is firmly attached to the second substrate 2006 or the third substrate 2004, so that the process processing can be performed as an integrated (single) substrate without being separated. Is possible.
  • the outer side wall of one capacitive pressure sensor package is 2002-1 or 2002-6 or a conductor side wall connected thereto. (2002-7 and 2002-8 are the outer side walls of the adjacent sensor package.)
  • the inner side of these side walls is a through groove space W, and the actual capacitive element is arranged surrounded by the through groove space W. Yes.
  • the outermost outer side wall can be selected in consideration of the strength of the sensor package, and the thickness of the conductor side wall connected to 2002-1 and 2002-6 can be selected at once in the substrate. Can be created in large quantities. Moreover, since an LSI process or LSI technology can be used, it can be created with high accuracy.
  • the second substrate 2006 can be used for these.
  • Each capacitive element is separated.
  • the third substrate 2004 has openings corresponding to the openings T4 and T5 so as to surround each of the capacitive elements.
  • each of these capacitive elements is separated.
  • each capacitive element that is, a pressure sensor (detection element) package
  • this capacitive element can be made into a single package (mounting form) by itself, a large number of pressure sensors (detecting elements) can be produced from one conductive substrate (wafer) 2002.
  • the material used is small and the process is very simple and easy, the running cost is very low.
  • the recesses, through-holes (grooves), or grooves of the present invention described heretofore and hereinafter will be described with reference to the substrate surface (the substrate surface is the upper surface (also referred to as the first surface or the front surface) and / or the lower surface (the second surface, the back surface).
  • the upper surface and the lower surface are generally parallel to each other). Optimally literally vertical.
  • the recesses and the like are formed by a photolithographic method + etching method, imprinting method, or the like, there are cases where they are not completely vertical (90 degrees).
  • the side surface is viewed microscopically, there may be fine unevenness (occurred by etching or the like), and in fact, the vertical pattern may not be accurately formed.
  • the term “perpendicular” means that the vertical pattern is intended to be manufactured, and in fact it is regarded as vertical even if it is not a complete vertical pattern.
  • the recess, the through hole (groove), or the groove of the present invention has an inclination with respect to the substrate surface of 20 degrees or less, preferably 10 degrees or less, more preferably 5 degrees or less, and even more preferably 1 degree or less. Even more preferably, it is desirable to be 0.5 degrees or less, and optimally 0.1 degrees or less.
  • FIG. 7 is a process diagram illustrating the manufacturing process of the present embodiment.
  • the third substrate of the composite substrate or a bonded substrate or a bonded substrate in which the third substrate 2004 is attached to the conductor substrate 2002 is not attached.
  • An insulating film 2014 is formed on the other surface (referred to as an upper surface or a first surface).
  • the conductor substrate 2002 is better because a low-resistance silicon semiconductor substrate (N + silicon substrate or P + silicon substrate) containing high-concentration impurities is easy to handle and easy to etch, but other conductor substrates may be used. Metal substrates and other conductor substrates can also be used.
  • the third substrate 2004 is preferably a glass substrate, a quartz substrate, or a transparent insulator substrate such as transparent plastic, but may be an insulating substrate such as a polymer substrate such as a ceramic substrate or a plastic substrate. (It does not have to be a transparent substrate.) Alternatively, a conductor substrate or a semiconductor substrate covered with an insulating film can be used. In short, the third substrate 2004 may not be directly conductive with the conductor substrate 2002 and may be insulated. The adhesion between the conductor substrate 2002 and the third substrate may be performed using an adhesive layer. Of course, this adhesive layer is an insulator. Otherwise, electrical conduction is established between the conductors separated through the adhesive layer.
  • the conductor substrate 2002 and the third substrate 2004 can be firmly bonded without using an adhesive layer by using a room temperature bonding method, thermal bonding, or the like. it can.
  • the conductor substrate 2002 and the third substrate 2004 can be firmly bonded to each other by raising the temperature to some extent by a diffusion method or a melting method.
  • the conductive substrate is a silicon substrate (N + substrate or P + substrate) and the third substrate is a glass substrate
  • the conductive substrate 2002 and the third substrate 2004 can be firmly bonded by anodic bonding. it can.
  • various insulating adhesives such as an epoxy-based organic adhesive and an inorganic adhesive can be used.
  • various heat treatments are performed, and thermal distortion occurs in order to ensure reliability after the product is completed. Therefore, the thermal expansion coefficients of the conductor substrate 2002 and the third substrate 2004 are approximate. Material is preferred.
  • the insulating film 2014 is an insulating film such as a silicon oxide film, a silicon nitride film, or an organic film.
  • a heat treatment at a temperature that is too high (about 400 ° C. to 500 ° C.).
  • the above method is not preferable in terms of thermal distortion, contamination, and alteration, and therefore, the CVD method, the PVD method, or the coating method is preferable.
  • a high-temperature heat treatment such as an oxidation method, it is preferable to perform the heat treatment before attaching the conductor substrate 2002 and the third substrate 2004.
  • a photosensitive film 2016 is formed on the insulating film 2014 and patterned into a desired shape, and a photosensitive film pattern 2016 (2016-1, 2, 3, 4, 5) is formed. , 6).
  • the insulating film 2014 is etched using this pattern, and the conductor substrate 2002 is further etched.
  • the etched portions become through grooves W (W1, W2, W3) and V (V1, V2) shown in the perspective view of FIG. Since the thickness a1 of the conductor substrate is one side of the diaphragm, it is considerably thick and is usually about 100 ⁇ m or more.
  • the etching variation amount and the side etching amount and the over etching amount become large. It is good to decide. Usually, it is about 2.0 mm or less, preferably about 1.0 mm or less. Since the photosensitive pattern 2016 is also etched to some extent when the insulating film 2014 is etched, it is preferable that the etching selectivity of the photosensitive film 2016 with respect to the insulating film 2014 is high. The insulating film 2014 is used when the adhesion between the photosensitive film 2016 and the conductor film 2002 is not very good, or when the patterning accuracy is poor due to large reflection of patterning light from the conductor film.
  • the photosensitive film 2016 may be formed directly on the conductor film 2002 without forming the insulating film.
  • the thickness a3 of the insulating film 2014 is about 0.5 ⁇ m or less for the above purpose.
  • the insulating film 2014 and the conductive film 2014 are electrically conductive.
  • the etching selectivity with respect to the body substrate 2002 is larger than the etching selectivity between the photosensitive film 2016 and the conductor film 2002, or when the side etching amount is smaller when the insulating film 2014 is interposed, the etching selectivity is about 0.5 ⁇ m or more.
  • An insulating film having a thickness may be stacked as appropriate.
  • the purpose is to form a deep through-groove of a conductive substrate with high accuracy in accordance with the photosensitive pattern, and therefore a method meeting this purpose is appropriately selected.
  • a1 is about 100 ⁇ m and the etching selectivity between the photosensitive film 2016 and the conductor substrate 2002 is 20, the thickness a4 of the photosensitive film is made thicker than about 5 ⁇ m. If a1 is thinner than this or if the selection ratio is large, a4 may be made thinner. Conversely, if a1 is thicker or the selection ratio is smaller, a4 must be thicker. However, when the insulating film 2014 is formed, the thickness of the insulating film 2014 is also taken into consideration.
  • the pattern of the photosensitive film 2016 is made as vertical as possible, and the etching of the insulating film 2014 and the conductor substrate 2002 using the pattern is made as vertical as possible. Since the pattern of the photosensitive film 2016 is determined by the pattern of the exposure mask, this accuracy is also important. As can be seen from the perspective view of FIG. 6, the important point of the present invention is to form the thickness of the side wall electrodes 2002-3 and 2002-4 forming the capacitive element as accurately as possible without variation. This thickness is about 1 ⁇ m to about 20 ⁇ m.
  • the pattern for forming the side wall electrodes 2002-3 and 2002-4 is the pattern 2016-3 and 2016-4 in FIG. 7C.
  • the pattern width is about 1 ⁇ m to about 20 ⁇ m.
  • a conductive electrode pattern (side wall) having a width (wall thickness) of about 3 ⁇ m the width of the photosensitive films 2016-3 and 2016-4 is set to about 3 ⁇ m, and the thickness a4 is set to about 5 ⁇ m.
  • Deep through-grooves V and W are formed using very small anisotropic etching (for example, deep etching (DRIE) such as Bosch method).
  • DRIE deep etching
  • the conductor substrate 2002 is completely etched in the depth direction (thickness a1 direction).
  • the etching rate varies to some extent both in the substrate depth direction and in the substrate surface, a certain degree of overetching is required to completely etch the conductive substrate 2002 in the depth direction. If the selection ratio of the etching rates of the conductor substrate 2002 and the third substrate 2004 is small, the third substrate 2004 is also etched to some extent depending on the location. However, since the third substrate 2004 is made of a material different from that of the conductor substrate 2002, the third substrate 2004 is almost completely etched if the conductor film 2002 is etched under an etching condition with a large etching selectivity between the conductor film 2002 and the third substrate 2004. The conductor film 2002 can be etched without etching.
  • a desired side wall (width of about 5 ⁇ m, depth of 300 ⁇ m, depth of 600 ⁇ m) can be formed by using deep etching (DRIE) such as a method.
  • DRIE deep etching
  • fluorine-based gas fluorine-based gas (CF4, C2F6, C3F8, CHF3, SF6, etc.), chlorine-based gas (CCl4, etc.), or the like is used.
  • the second substrate 2006 is attached to the conductor substrate 2002.
  • the second substrate may be bonded directly to the conductor substrate 2002 or may be bonded via an adhesive layer.
  • an anodic bonding method can also be used.
  • the insulating film 2014 may be left if it is not necessary to be removed, or a second substrate may be bonded to the conductor substrate 2002 after a new insulating film is formed.
  • an insulating film or the like may be laminated inside the groove as a protective film.
  • the through grooves V (V1, V2) and W (W1, W2, W3) are sealed, so that pressure transmission holes (S, T) must be formed in the subsequent steps.
  • the product is produced in a sealed state and the pressure is maintained. Therefore, the process pressure state in the step of FIG. 7D is maintained.
  • the pressure varies due to the generation of outgas or reaction gas inside the through groove sealed after bonding.
  • a substance that adsorbs these gases may be placed in advance in the through groove.
  • the second substrate 2006 After the second substrate 2006 is attached to the conductor substrate 2002, the second substrate can be thinned by an etching method or a polishing method. There is a merit that it is easier to handle than the process of attaching a thin second substrate from the beginning (attaching a thin second substrate to another substrate to a conductive substrate).
  • contact is made with a portion (2002-2 or 2002-5) to be connected to the conductor substrate 2002 at the portion where the conductor substrate 2002 and the second substrate 2006 are bonded.
  • Holes 2008 (2008-1, 2008-2) are formed. This contact hole can also be formed in the conductor substrate 2002-3 or 2002-4, but since the width of this part is narrow, it is preferable to form it in a wider part (2002-2 or 2002-5).
  • a contact hole having a sufficient size can be formed.
  • the depth (length) of the through groove is about 400 ⁇ m
  • the length is about 400 ⁇ m
  • the size in the width direction depends on the size of the pressure sensor, but the area of 2002-2 and 2002-5 is From the balance with the length of the through groove, at least about 100 ⁇ m can be taken (of course, a smaller package may be used, or a smaller package can be used).
  • the thickness of the second substrate 2006 is also considerably thick (about 50 ⁇ m is desired from the strength of the pressure sensor package, of course, it can be made thinner if it is not necessary to increase the strength so much), but the area of 2002-2 and 2002-5 If the thickness is about 100 ⁇ m, the contact size can be increased to 50 ⁇ m or more, so that the aspect ratio of the contact hole can be about 1. If the contact is large, wet etching is possible. For example, etching with an HF-based solution such as a buffered hydrofluoric acid aqueous solution (HF solution + NH 4 F solution) or an HF aqueous solution is also possible.
  • HF-based solution such as a buffered hydrofluoric acid aqueous solution (HF solution + NH 4 F solution) or an HF aqueous solution is also possible.
  • the second substrate 2006 is preferably an insulator.
  • the contact hole 2008 is formed in the conductor substrate whose surface is covered with the insulating film, the conductor is exposed in the contact hole 2008, so that the insulating film is laminated again and the process becomes complicated.
  • the thickness of the second substrate 2006 is determined based on the strength of the pressure sensor package, and the conductor substrate 2002-2 or 2002 in which the contact hole is disposed based on the adhesion strength between the size of the pressure sensor package and the conductor substrate.
  • the size of ⁇ 5 is determined, and then the size of the contact hole 2008 is determined. From the viewpoint of easy formation of the conductor films 2009 and 2010 and connection with the conductor substrate, it is preferable that the size of the contact hole is wide.
  • the size of the contact hole in consideration of the fact that the electrode 2010 is larger than the contact size and that the size is such that no trouble occurs in terms of connection to the outside.
  • isotropic etching can be used by dry etching or wet etching. In order to form the taper, a certain amount of contact formation region is required.
  • the contact formation region 2002-5 in this embodiment is relatively wide, the contact hole can be tapered.
  • a contact hole 2008 is formed in the second substrate 2006 in advance (a pressure transmission hole can be formed at the same time), and the second substrate 2006 with the contact hole (+ pressure transmission hole) is used as a conductor substrate. It may be attached to 2002. Since the process of forming the second substrate 2006 with the contact hole (+ pressure transmission hole) can be performed in parallel with the capacitor element forming process of the present invention, the work process is simplified and the work time is shortened. realizable. Since the step of forming the contact hole (+ pressure transmission hole) in the second substrate 2006 before adhering to the conductor substrate 2002 is performed separately from the conductor substrate 2002 as an actual device, it is a relatively rough step.
  • the contact hole is wet-etched, it is immersed in an HF-based solution or the like. Therefore, when the adhesion of the photosensitive film is poor, the HF-based solution enters from that portion and affects the entire product. If the process is performed by dividing only two substrates, the damage can be minimized.
  • the second substrate 2006 has a pattern of contact holes (+ pressure transmission holes), a certain degree of accurate alignment is required in the adhesion process with the conductor substrate 2002. That is, it is necessary to align the contact hole 2008 in the region of the conductive substrate 2002-5 and the pressure transmission hole S in the region of the through groove V.
  • a conductor film 2009 (2009-1, 2009-2) is stacked in the contact hole 2008 (2008-1, 2008-2). It is also possible to flatten the contact hole by laminating a conductor film only on the contact hole.
  • a metal film for example, W
  • W may be selectively grown in the contact hole by a selective CVD method, or only the contact hole may be plated by a plating method.
  • a method of laminating a conductor film on the second substrate 2006 and leaving the conductor film 2009 only in the contact hole 2008 by an etch back method can also be employed.
  • a conductive paste is coated by a squeegee method or a screen printing method, and the conductive paste is embedded in the contact hole.
  • the mask can be brought into close contact with the second substrate 2006 and the conductive paste can be embedded in the contact hole 2008 by a squeegee method or a screen printing method.
  • a conductive paste (for example, a solder paste) is buried in the contact hole 2008 and formed thick, and the electrode / wiring 2010 can be formed simultaneously by a subsequent heat treatment.
  • a conductor film 2010 is laminated to cover the contact hole 2008, and a desired wiring is performed to form an electrode / wiring pattern 2010 (2010-1, 2010-2).
  • the conductor films 2009 and 2010 are connected through a contact hole 2008.
  • This conductor film 2010 is made of a metal film such as aluminum (Al), titanium (Ti), chromium (Cr), tungsten (W), copper (Cu), platinum (Pt), tin (Sn), gold (Au), etc.
  • metal alloy films, silicide films, conductive polycrystalline silicon films, conductive plastics, and various conductor films can be used. Further, a plurality of these conductor films may be appropriately selected and laminated.
  • a method for forming the conductor film there are a PVD method such as sputtering and a CVD method. Alternatively, it can be formed by a plating method.
  • the conductor film 2010 can be directly laminated also on the contact hole 2008 without the conductor film 2009 being laminated on the contact hole 2008, so that the electrode / wiring pattern 2010 (2010-1, 2010- 2) may be formed. This can simplify the process. The same applies to the lamination of the conductor film 2009. However, when the conductor film 2010 is laminated directly in the contact hole 2008, an impurity layer (for example, oxide layer) remaining on the conductor substrate 2002 exposed in the contact hole is used. In addition, it is necessary to stack the conductor film 2010 after removing the other foreign matter). For example, before laminating a metal film or the like by PVD or CVD, the impurity layer is removed by pretreatment with an HF-based solution or the like.
  • an impurity layer for example, oxide layer
  • a metal film or the like can be laminated after reverse sputtering.
  • a metal film or the like can be laminated after lightly etching using an etching gas such as CF.
  • the seed layer is formed by laminating refractory metals such as Ti and Ta, conductive nitrides such as TiN and TaN, or laminated films of these as barrier metals by CVD or PVD.
  • a Cu film is laminated and a Cu plating layer is formed by electrolytic plating. Thereafter, electrode / wiring patterns 2010 (2010-1 and 2010-2) are formed while leaving a necessary metal layer.
  • the seed layer and the barrier metal that are not plated with Cu are etched to form the electrode / wiring pattern 2010 of the Cu plated layer.
  • bump metal soldder, gold, copper, other metals or alloys
  • the through-groove V1 is surrounded by the side walls 2002-3 and 2002-2 and the side walls (not shown, but present on the front side and the rear side), so that the side wall conductor substrate 2002 is provided. -2 and 2002-3 are continuums. Accordingly, the electrode / wiring 2010-1 is directly connected to the side wall 2002-3.
  • the sidewall conductor substrate 2002-4 which is the other electrode facing the sidewall 2002-3, is also present on both sides of the sidewall conductor substrate (not shown, but on the front and rear sides of the paper). ) To the thick sidewall conductor substrate 2002-5, and the electrode / wiring 2010-2 is directly connected to the sidewall 2002-4.
  • a pressure transmission hole T (T1) is formed in the third substrate 2004, and the through grooves V1 and V2 opposed thereto are formed.
  • a pressure transmission hole S (S1, S2) in the second substrate 2006.
  • the space of the through groove W (W1) is a conductor side wall substrate (2002-2 and 2002) surrounding the through grooves V1 and V2. 3 or 2002-4 and 2002-5) and the through groove W (W1) is connected to W (W2) and W (W3), so that the pressure transmission hole T (T1) is not necessarily
  • the portion W (W1) may not be present, and the portion W2 or W3 may be employed.
  • the capacitance change can be detected through -1 and 2010-2. 6, 7, and 8, since the thickness of the conductor substrate 2002 determines one side of the electrode area of the capacitor element, the capacitor element is not affected by variations in the etching amount of the conductor substrate 2002. is there. That is, if the thickness of the conductor substrate 2002 is a1 (described in FIG. 7C) and the length of the depth side through grooves V (V1, V2) is b1 (described in FIG. 8A), The electrode area of the capacitive element is a1 * b1.
  • the conductor patterns formed by the patterns of the photosensitive films 2016-3 and 2016-4 are very long in the lengths of 2002-3 and 2002-4 with respect to the width.
  • the depth direction perpendicular to the paper surface is long.
  • a width of about 1 ⁇ m to about 20 ⁇ m (if the etching accuracy is good, a conductor pattern narrower than 1 ⁇ m can be formed, and a conductor with a small Young's modulus can be formed.
  • a conductor pattern thicker than 20 ⁇ m may be used.
  • About 50 ⁇ m to about 500 ⁇ m in height (a conductor substrate thinner than about 50 ⁇ m is careful in handling the conductor substrate) If the etching method and conditions are optimized, a substrate thicker than about 500 ⁇ m can be used.) Therefore, considering the fact that etching is difficult and that there is a risk that the vertically long sidewalls 2002-3 and 2002-4 will not be deformed during or after etching, the process shown in FIG. 9 can be taken. . (Note that when the pattern width is about 3 ⁇ m and the aspect ratio is 50 or more, the above-mentioned problem may occur.
  • FIG. 9A shows the process in FIG. Although the same, the narrow patterns of the photosensitive patterns 2016-3 and 2016-4 are combined into a thick pattern 2016-7. In this portion, the through groove W1 is formed, but not yet formed at this stage. Since the pattern width of 2016-7 is the width of 2016-3 + the width of 2016-4 + the width of W1, it is considerably wide. For example, if the width of 2016-3 is 5 ⁇ m, the width of 2016-4 is 5 ⁇ m, and the width of W1 is 50 ⁇ m, the pattern width of 2016-7 is 60 ⁇ m.
  • the insulating film 2014 and the conductor film 2002 are vertically etched using the pattern of the photosensitive film 2016 as a mask. Since the long and narrow vertical pattern as shown in FIG. 7 (c) disappeared, the above problems were solved.
  • the width of 2016-3 is 3 ⁇ m
  • the width of 2016-4 is 3 ⁇ m
  • the width of W1 is 50 ⁇ m
  • the pattern width of the photosensitive film 2016-7 is 56 ⁇ m
  • the thickness of the conductor substrate is 300 ⁇ m.
  • the pattern width of the conductive substrate 202-7 after the etching is about 56 ⁇ m (the aspect ratio is about 5.4), and the pattern 2002 (2002-1, 2002-2, 2002-5, 2002-6) of the other conductive substrate is obtained.
  • the photosensitive film 2016 and the insulating film 2014 are removed.
  • the insulating film 2014 may be left as long as there is no problem.
  • the photosensitive film 2016 can be patterned directly on the conductor substrate 2002 with good adhesion, and if there is no problem in etching the conductor substrate 2002, the insulating film 2014 is formed. No need.
  • the second substrate 2018 is attached to the first surface side of the conductor substrate 2002.
  • the second substrate 2018 is not electrically connected to the conductor substrate 2002. Since the contact hole is also formed, the second substrate 2018 is preferably an insulator.
  • a transparent insulator such as a glass substrate, a quartz substrate, or a transparent plastic can be easily observed inside, but an opaque insulator such as a ceramic or a polymer material may be used.
  • the conductive substrate 2002 is a silicon substrate and the insulating substrate 2018 is a glass substrate
  • the conductive substrate 2002 and the insulating substrate 2018 can be firmly bonded using an anodic bonding method.
  • a direct bonding method or an adhesive layer can be used for bonding the conductor substrate 2002 and the insulating substrate 2018. As these bonding methods, the best method can be selected as appropriate in consideration of the materials, shapes, processes, and the like of the conductor substrate 2002 and the insulating substrate 2018.
  • the conductor substrate 2002 formed by this method does not have an elongated pattern such as 2002-3 and 2002-4 in FIG. 7, it is easy to bond the second substrate 2018 to the conductor substrate 2002.
  • the pattern width becomes narrower, for example, the pattern width of the conductive substrate 202-7 after etching is about 16 ⁇ m (when the width of 2016-3 is 3 ⁇ m, the width of 2016-4 is 3 ⁇ m, and the width of W1 is 10 ⁇ m) Even if the pattern width of the photosensitive film 2016-7 is about 16 ⁇ m), when the thickness a1 of the conductive substrate 2002 is about 300 ⁇ m (aspect ratio is about 18.8), a conductive substrate (for example, a silicon substrate) ) 2002-7 can be attached to the second substrate 2018 without any problem without changing its shape.
  • a photosensitive film 2020 is formed on the third substrate 2004 (on the second surface side) and patterned, and a window 2022 for forming the through groove W1 is opened.
  • the third substrate 2004 is opened vertically from this window.
  • the conductor substrate 2002 is vertically etched from the window 2022 opened in the 2004 and is etched until reaching the second substrate 2018, thereby forming the through groove W1. It is desirable that the through groove W1 be completely etched so that no conductor material remains on the bottom.
  • the alignment of the photosensitive film 2002 needs to be accurately performed with the through grooves V1 and V2.
  • the third substrate 2004 is a transparent substrate, mask alignment can be performed directly from the second surface side, so alignment can be performed with very high accuracy. If there is a problem with transmission or reflection of light or electromagnetic waves even with a transparent substrate, the third substrate 2004 may be thinned before the photosensitive film 2020 is formed. As a method of thinning the third substrate 2004, there are a polishing method (CMP or BG method), an etching method, and various other methods. If the third substrate 2004 is thinned, light and electromagnetic waves are irradiated from the first surface side, and light and electromagnetic waves transmitted through the thinned third substrate are used to sensitize to the patterns of the through grooves V1 and V2. The pattern of the conductive film 2020 can be accurately performed.
  • CMP or BG method polishing method
  • etching method etching method
  • the alignment accuracy of the photosensitive film 2020 with respect to the pattern of the through grooves V1 and V2 is about 0.1 ⁇ m to about 0.5 ⁇ m, or about 0.5 ⁇ m to about 1 at present. Since the thickness can be about 0.0 ⁇ m to about 2.0 ⁇ m, the thickness (width direction) of the sidewalls 2002-3 and 2002-4 of the conductive substrate after etching can be made very thin. Even the current method can be about 2 ⁇ m, so it can be made thinner in the future.
  • a further advantage of this method is that the conductive substrate 2002 is securely bonded and pressed by the second substrate 2018 and the third substrate 2004 before forming the sidewalls 2002-3 and 2002-4 of the elongated conductive substrate.
  • the photosensitive film 2020 is removed.
  • the fourth substrate 2024 may be further bonded onto the third substrate 2004.
  • the fourth substrate does not need to be an insulator and can be a semiconductor substrate or a conductor substrate.
  • the through grooves W2 and W3 are formed at the same time as the through grooves V1 and V2 in FIG. 9 because the side walls on both sides thereof are wide, but may be formed at the same time as the through grooves W1.
  • the alignment of W2 and W3 need not be as accurate as the alignment of W1. (However, when a large number of through-grooves such as W1 are formed, it is natural that the adjacent V1 and V2 need to be accurately aligned.) After that, FIG. The same process as the process is performed.
  • FIGS. 8A to 8C schematically show projection views of one capacitive element (pressure sensor) created by the embodiment shown in FIGS. 6 and 7.
  • FIG. 8B is the same as FIG. 7G and shows a front view.
  • FIG. 8A is a top view (or plan view).
  • FIG. 8B can be considered as a view of the cross section taken along A1-A2 of the plan view as seen from the front.
  • FIG. 8C can be considered as a view of the cross section taken along the line B1-B2 as seen from the right side.
  • the conductor 2002 surrounds the through groove V (V1, V2), and the conductor 2002 is surrounded by the through groove W (W1, W2, W3).
  • the body substrate 2002 (2002-2, 2002-3) is connected inside, the conductor substrate 2002 (2002-4, 2002-5) is connected inside, the conductor substrate 2002 (2002-2, 2002-3) and the conductive substrate 2002 (2002-4, 2002-5) are not separated and connected, and the conductive substrate 2002 (2002-1, 2002-6) is connected, and the through groove W ( W1, W2, W3) surrounding one, forming one capacitive element package (pressure sensor package), connected to the through grooves V (V1, V2) and W (W1, W2, W3)
  • Each of the pressure transmission holes S (S1, S2) and T (T1) is on the opposite side of the third substrate 2004 or the second substrate 2006, and if a pressure transmission line is connected to these holes, the holes are penetrated.
  • Capacitance element (pressure sensor) package capable of transmitting pressure to grooves V (V1, V2) and W (W1, W2, W3) or applying pressure P1 from the first surface (upper surface) of the capacitive element (pressure sensor) package
  • pressure P2 is applied from the second surface (bottom surface)
  • each pressure is transmitted to the inside of the through groove V (V1, V2) or the through groove W (W1, W2, W3).
  • the pressure transmission holes S and T may be formed on the same substrate (2004 or 2006), may be formed on opposite substrates, or may be formed on both substrates. The pressure may be appropriately selected depending on whether the pressure is guided to these holes.)
  • the counter electrodes constituting the capacitance element are 2002-3 and 2002-4.
  • the conductor side wall electrode 2002-3 as the counter electrode is connected to the side wall 2002-7 and the side wall 2002-8, and further to 2002-2.
  • the width (thickness) of the conductor side wall electrode 2002-3 is selected so that it can be deformed by the pressure difference P1-P2. good. For this purpose, it is formed thicker than the conductor side wall electrode 2002-3. For example, when the width (thickness) of the conductor side wall electrode 2002-3 is 3 ⁇ m to 10 ⁇ m, it is set to be three times or more the thickness of the other side wall 2002 (2002-2, 7, 8).
  • the width (thickness) of the conductor side wall electrode 2002-3 is 10 ⁇ m to 20 ⁇ m, it is set to be twice or more the thickness of the other side wall 2002 (2002-2, 7, 8). By doing so, the strength of the side wall 2002 (2002-2, 7, 8) surrounding the V1 groove can be sufficiently secured. In addition, the conductor side wall electrode 2002-3 can be smoothly deformed due to the pressure difference. The same applies to the side wall connected to the conductor side wall electrode 2002-4, which is another counter electrode.
  • the portion surrounded by the outermost dotted line X represents the planar size of one capacitive element (pressure sensor) package. It can be seen that a capacitive element (pressure sensor) package of a very small size can be realized.
  • the thickness of the conductor substrate is 300 ⁇ m
  • the length of the sidewall electrode is 300 ⁇ m
  • the width d of W1 is 20 ⁇ m
  • the width of the conductor connected to the sidewall electrode 2002-3 (A1-A2 direction) is 100 ⁇ m
  • the sidewall electrode 2002 4 is 100 ⁇ m in width (A1-A2 direction)
  • 50 ⁇ m in width W (W2, W3) 50 ⁇ m in width W (W2, W3)
  • 100 ⁇ m in width (thickness) in the side wall 2002 2002-1, 6, 9, 10) that surrounds the outside.
  • X and the outer side wall 2002 have a distance of 10 ⁇ m
  • the size of one package (the size of X) is the horizontal direction (A1-A2 direction). 0.54 mm
  • the vertical direction (B1-B2 direction) is 0.62 mm.
  • FIG. 8D is a schematic diagram when a capacitive element (pressure sensor) package is mounted on a mounting substrate.
  • the outer frame legs 2030 (2030-1, 2030-2) and the reinforcing legs 2032 (2032-1, 2032-2) are attached to the third substrate 2004.
  • the capacitive element (pressure sensor) package is lifted and the periphery is a continuous frame in order to confine the pressure in the frame. Therefore, 2030-1 and 2030-2 are continuous.
  • the outer frame legs 2030 are securely attached to the mounting substrate so that the inside can be kept airtight (the pressure space U is formed).
  • the reinforcing legs 2032 are for preventing the capacitive element (pressure sensor) package from being deformed, and are attached to the mounting substrate together with the outer frame legs 2030 to support the capacitive element (pressure sensor) package. Accordingly, it is desirable that the outer frame legs 2030 (2030-1, 2030-2) and the reinforcing legs 2032 (2032-1, 2032-2) have the same height and are made of the same material, and are attached to the third substrate 2004 at the same time. it can. If a large number of the outer frame legs 2030 and the reinforcing legs 2032 are attached to a separate board and transferred from the separate board to the third board at once, the large number of outer frame legs 2030 and the reinforcing legs 2032 are collectively attached to the third board.
  • An adhesive layer may be used when the outer frame legs 2030 (2030-1, 2030-2) and the reinforcing legs 2032 (2032-1, 2032-2) are bonded to the third substrate 2004.
  • a frame body 2034 (2034-1, 2034-2) is attached to the second substrate 2006, and a lid 2036 is further mounted on the frame body 2034. With the frame body 2034 and the lid 2036, The pressure transmission holes S (S1, S2) on the first surface side are covered, and the space Z surrounded by these is the same pressure space as the through grooves V (V1, V2) through the pressure transmission holes S (S1, S2). It becomes.
  • the frame body 2034 is also bonded to the second substrate 2006 after the process shown in FIG. Further, a lid 2036 is adhered thereon.
  • the frame 2034 previously attached with the lid 2036 may be bonded to the second substrate 2006. Since many of these can be bonded to the second substrate at a time, they can be created very simply and inexpensively.
  • An adhesive layer may be used when the lid 2036 is bonded onto the frame body 2034. Note that an adhesive layer may also be used when the frame 2034 (2034-1, 2034-2) is bonded to the second substrate 2006.
  • the capacitive elements (pressure sensors) created on the substrate as described above are divided into pieces by dicing or the like, individual capacitive elements (pressure sensors) packages can be obtained.
  • This package is mounted on a mounting substrate 2040 as shown in FIG.
  • the mounting substrate 2040 and the frame 2030 or 2032 of the capacitive element (pressure sensor) package may be attached via an adhesive.
  • the space U surrounded by the outer frame legs 2030, the third substrate 2004, and the mounting substrate 2040 is connected to the through grooves W (W1, W2, W3) through the pressure transmission holes T (T1) and becomes the same pressure space. It is necessary to securely bond the frame 2030 of the capacitive element (pressure sensor) package so that there is no pressure leakage.
  • Electrode / wiring layers 2042 are formed on the mounting substrate, and electrodes / wirings 2010 (2010-1, 2010-2) and wires 2044 (2044) of the capacitive element (pressure sensor) package are formed. -1,2044-2) etc.
  • the electrode / wiring layer 2042 (2042-1, 2042-2) formed on the mounting substrate is connected to IC, transistors, and other active elements, and the pressure is calculated from the capacitance change detected by the capacitive element (pressure sensor) package. It becomes possible to do.
  • the pressure spaces U and Z are connected to various environments and devices having a pressure to be detected, and pressure is guided from there to the pressure spaces U and Z.
  • the pressure space U can be further provided with a pressure transmission hole in the frame body 2030 and the mounting substrate, and the pressure space Z can be further provided with a pressure transmission hole in the frame body 2034 and the lid 2036. Even if the outer frame legs and the frame as shown in FIG. 8D are not formed, the capacitive element (pressure sensor) package shown in FIGS. Needless to say, the pressure can be measured.
  • FIG. 10A is a plan view
  • FIG. 10B is a view of the A1-A2 cross section in FIG. 10A viewed from the side
  • FIG. 10C is a cross section of the B1-B2 side view. It is the figure seen from.
  • Reference numeral 5001 indicates only the unit size of the capacitive element (package) of the present invention, and it can be considered as a scribe line. By repeating this process, a large number of capacitive elements of the present invention can be produced in the substrate (wafer). To do.
  • 5002 is a conductor substrate
  • 5003 is a through-groove (corresponding to W described so far)
  • 5004 is a through-groove that is not connected to the through-groove 5003 in the conductor (corresponding to V described so far), (through-groove). Since 5003 and 5004 are spaces, they may be referred to as through-groove spaces
  • 5007 is a contact hole opened in a plate 5009 for connecting a conductive substrate 5002 and a conductive film (electrode / wiring) 5008, This contact hole contains a conductive film (also 5007) and is connected to the conductive film (electrode / wiring) 5008 and the conductor substrate 5002.
  • the conductive film entering the contact hole 5007 is a conductive film (electrode).
  • -Wiring) 5008 may also be used (same) as the pattern of contact hole 5007 and electrode / wiring 5008.
  • Conductor 5002 (5002-1, 50) Needless to say, the contact holes 5007-1 and the electrodes / wirings 5008-1 are not limited to the positions shown in the drawing as long as they can contact 2-2). (However, if the area of 5002-2 is narrow, the contact hole can be formed, but if it is too narrow to place the wiring / electrode, the wiring / electrode is extended to a wide area. Just bring it.
  • Reference numeral 5009 denotes a plate (also referred to as a substrate) attached to the upper surface (first surface) of the conductive substrate, and basically an insulating substrate is preferable.
  • a transparent insulator such as glass, quartz, transparent plastic, transparent polymer (or a composite thereof) is preferable from the viewpoint of the inside being visible and mask alignment.
  • a material that transmits light at the time of mask alignment may be used.
  • a material that can transmit a necessary amount of light at the time of mask alignment may be used. This means that such a material or a material having such a thickness may be used as long as the light intensity can be increased and the amount of light necessary for mask alignment can be secured even if the light transmittance is low.
  • Reference numeral 5010 denotes a plate (also referred to as a substrate) attached to the lower surface (second surface) of the conductor substrate, and is preferably an insulating substrate.
  • a transparent insulator such as glass, quartz, or a transparent polymer (or a composite thereof) is preferable from the viewpoint of the inside being visible and mask alignment.
  • the plate 5009 may be a conductor. If the plate 5009 is a conductor, contact holes 5007 (5007-1 and 5007-2) and electrodes / wirings 5008 (5008-1 and 5008-2) are not required, and the plate 5009 which is the conductor substrate is directly connected. Just do it. Therefore, in an environment where such a capacitive element (pressure sensor) can be used, it is possible to create a very low cost device. However, since the conductor substrate 5002 must be fixed by the plate 5009 or 5010, neither of them can be a conductor substrate.
  • the conductive substrate 5002-2 is a thin diaphragm, and this conductive substrate 5002-2 serves as one electrode of the capacitive element.
  • the other counter electrode of the capacitor element is 5002-1, which is a thick electrode and does not serve as a diaphragm.
  • the electrodes 5002-1 and 5002-2 of this capacitive element are parallel plate capacitive elements having a distance c1 when the pressure P1 of the through groove space 5004 and the pressure P2 of the through groove space 5003-1 are the same.
  • the amount of deformation of c1 is smaller than when there is a diaphragm on both sides.
  • the deformation amount can be adjusted even with the same pressure difference.
  • the through-groove spaces 5004 and 5003 are open to the outside (the through-groove space 5004 is open to the left of the page), so that P1 and P2 are the same even if mounted in this state. Because of the pressure, it is necessary to separate the through groove spaces 5004 and 5003 (particularly 5003-1) at the mounting stage.
  • the conductive substrates 5002-2, 5002-3, and 5002-4 surrounding the through-groove 5004 the characteristics of the capacitive element are more stable when the 5002-3 and 5002-4 are not deformed by a pressure difference. Therefore, the thickness in the width direction of the conductor substrates 5002-3 and 5002-4 is made larger than that of the conductor substrate 5002-2.
  • the side wall electrode 5002-2 has a rectangular (square or rectangular) shape, and has an upper surface fixed by a plate 5009, a lower surface fixed by a plate 5010, and side surfaces fixed by 5002-3 and 5002-4. In this embodiment, if the through groove 5004 is formed, it can be formed only by dicing.
  • the through groove 5003 is not formed entirely (with the conductor substrates 5002-1 and 5002-2 being connected), and the through groove of the 5003-1 is formed by dicing (thereby, the conductor substrate 5002- 1 and 5002-2 are separated).
  • the conductor substrate 5002 is completely diced in the depth direction.
  • the plate 5009, the conductor substrate 5002 below it, and the plate 5010 below it are diced along a line 5001 indicated by a dotted line.
  • the inter-electrode distance c1 (groove width of the through groove 5003-1) is a dicing width at the time of dicing.
  • the width c2 of the diaphragm side wall electrode also depends on the dicing alignment accuracy.
  • a laser can be used instead of dicing using a cutting blade or a cutting wire.
  • the laser can be adjusted to the through groove 5004 with high accuracy in forming the through groove 5003, the thickness c2 of the diaphragm portion can be made with high accuracy.
  • the conductor substrate 5002 is a silicon substrate
  • laser dicing can be performed with high accuracy using an Nd: YVO4 laser, a CO2 laser, or the like.
  • the conductive substrate 5002 can be completely separated without substantially removing the plate 5010.
  • the alignment with the through groove 5004 may be performed by reading position information of the through groove 5004 from the plate 5009 or 5010 which is a transparent substrate and scanning with the laser beam based on the position of the through groove 5004. Alternatively, mask alignment may be performed and laser light may be irradiated from a pattern formed on the mask.
  • the material removed by the laser irradiation can be excluded from there. If it is desired to leave the plate 5009 and / or 5010 above the through-groove 5002-2, the plate 5009 along the dicing line 5001 is removed with a laser (this portion of the plate will eventually be removed and removed). Further, if the conductor substrate 5002 is also removed with a laser beam, a substance (such as silicon gas) cut from the space along the scribe line can be eliminated. In addition, when the conductor substrate 5002 along the scribe line is removed, if the plate 5010 is left, it will not be separated into individual pieces. In addition, the through groove 5003-1 may be formed using a dry etching method (DRIE method). As described above, this embodiment can produce a pressure sensor by a very simple process.
  • DRIE method dry etching method
  • FIGS. 10 (d) to 10 (e) show a further modified embodiment of what is shown in FIGS. 10 (a) to 10 (c).
  • 10D is a plan view
  • FIG. 10E is a cross-sectional view taken along line A1-A2 in FIG. 10D
  • FIG. 10F is a cross-sectional view taken along line B1-B2 in FIG. 10D.
  • the through groove 5004 is surrounded by the conductor substrate 5002.
  • the through groove space 5004 is a closed space in which the upper side is the plate 5009, the lower side is the plate 5010, and the side surface is surrounded by the conductor substrate 5002 (5002-2, 5002-3, 5002-4, 5002-5).
  • FIGS. 10A to 10C are open without the side wall 5002-5 of the conductor substrate.
  • the pressure when the plate 5009 or the plate 5010 is attached to the conductor substrate 5002 It is trapped at a pressure determined by If a gas adsorbing substance is put in the through groove, the pressure in the through groove can be reduced to a low pressure close to vacuum.
  • a gas generating substance is inserted, the plate 5009 and the plate 5010 are attached to the conductor substrate 5002 and completely sealed, and then a desired pressure can be obtained by discharging the gas from the gas generating substance.
  • the solidification temperature (or melting point or solid-liquid phase transition point) of the gas generating substance is T3
  • the gas generating substance When the boiling point (or liquid phase-gas phase transition point) of T4 is T4 and the sublimation temperature (sublimation point or solid phase-gas phase transition point) of the gas generating material is T5, T4 ⁇ T1 solid
  • T6 ⁇ T3 the temperature (T6) at the time of sealing is T6 ⁇ T3.
  • a liquid substance of T4 ⁇ T1 is put in a through groove in a liquid state and sealed. Therefore, the temperature (T6) at the time of sealing is T6 ⁇ T4.
  • T6 ⁇ T5 a solid material of T5 ⁇ T1 is put in a through groove in a solid state and sealed. Therefore, the temperature (T6) at the time of sealing is T6 ⁇ T5.
  • this substance does not react with the substance inside the through groove (in the above example, glass or silicon) particularly in a gaseous state. Since the amount of gas in the solid substance or liquid substance and the volume of the through groove are known, the pressure inside the through groove can be calculated at a temperature of T1 to T2. Therefore, since the pressure in the through groove can be known, the pressure of the through groove 5003-1 can be known using the pressure. Needless to say, this is applicable to all embodiments of the present invention.
  • the pressure transmission hole 5012 may be formed in the plate 5009.
  • the through groove 5012 can be formed simultaneously with the patterning of the pressure transmission hole 5012 when the contact hole 5007 is formed. After that, since a conductive film is formed, it is necessary to consider entering into the pressure transmission hole 5004 and the through groove. Further, when the pressure transmission hole 5012 is formed, the etching gas, the etching solution, and the substance after etching (gas, liquid, or solid) also enter the through groove. Further, there is a risk that a photosensitive film for forming contact holes and pressure transmission holes, a residual film thereof, a developing solution, and the like may enter.
  • the pressure transmission hole 5012 is opened with a laser after forming the electrode / wiring 5008 (5008-1, 5008-2) (after forming a protective film). is there.
  • a plate 5009 in which the pressure transmission hole 5012 and the contact hole 5007 are formed from the beginning may be attached to the conductor substrate 5002.
  • the adhesive layer remaining in the pressure transmission hole 5012 and the contact hole 5007 may be removed. In this way, it is only necessary to perform a separate process for forming contact holes and pressure transmission holes in the plate, which shortens the process and shortens the product creation time.
  • the alignment of the contact hole and the pressure transmission hole does not require much precision, and therefore does not affect the alignment of the conductor substrate 5002 and the plate 5009.
  • the pressure conduction hole 5012 when the pressure transmission hole 5012 is not formed, the pressure conduction hole 5012 is electrically conductive by the differential pressure between the pressure P1 of the through groove 5004 and the pressure P2 of the through groove 5003-1 connected to the outside.
  • the diaphragm 5002-2 on the side wall of the body substrate is deformed. If there is a problem that the periphery of the through groove is exposed on the conductor substrate, it may be protected by laminating a protective film.
  • a material and a thickness may be appropriately selected depending on the environment in which the conductor film is in contact. A silicon nitride film or a silicon oxynitride film is preferable for improving the moisture resistance.
  • the pressure transmission hole is formed in the plate 5009, but it may be formed in the plate 5010.
  • Contact holes and electrodes / wirings may also be formed in the plate 5010.
  • the plates 5009 and 5010 may be made of the same material. In this case, the plates 5009 and 5010 can be considered upside down.
  • the through-groove 5003 can be formed by dicing similarly to the case described in FIGS. 10A to 10C.
  • the groove width c1 of the through groove 5003-1 is determined by dicing. Either plate 5009 or 5010 needs to be left undiced. In the case of dicing only the through groove 5003 leaving both, it is preferable to dice using a laser having an appropriate wavelength and intensity. However, in this case, it is necessary to cut both the plates 5009 and 5010 in the dicing line 5001.
  • FIGS. 10 (d) to 10 (f) show a conductor substrate side wall 5002-2 having a through groove 5004 inside the conductor 5002 shown in FIGS. 10 (d) to 10 (f) and a mirror-symmetrical one.
  • a capacitor element facing each other across the through groove 5003-1 is shown.
  • the through groove 5004 (5004-1) is surrounded by a conductive substrate 5002 (5002-2-1, 5002-3-1, 5002-4-1, 5002-5-1), and the upper surface and the lower surface are respectively It is covered with plates 5009 and 5010 and is a closed space. Further, a pressure transmission hole 5012 (5012-1) is also formed.
  • a mirror symmetric one is arranged with a through groove 5003-1 therebetween.
  • the through groove 5004 (5004-2) is surrounded by the conductor substrate 5002 (5002-2-2, 5002-3-2, 5002-4-2, 5002-5-2), and the upper surface and the lower surface. Are covered with plates 5009 and 5010, respectively, and are closed spaces.
  • a pressure transmission hole 5012 (5012-2) is also formed.
  • the conductive substrate side wall 5002-2-2 faces the conductive substrate side wall 5002-2-1, and the conductive substrate side wall 5002-2-1 and the conductive substrate side wall 5002-2-2 are connected to the counter electrode of the capacitor element.
  • the through groove 5003-1 is a capacity space.
  • These interelectrode distances c8 are the widths of the through grooves.
  • the conductor substrate side wall 5002-2-1 is deformed by the pressure difference between the pressure P1 of the through groove space 5004-1 and the pressure P2 of the through groove 5003-1. Further, the conductor substrate side wall 5002-2-2 is deformed by the pressure difference between the pressure in the through groove space 5004-2 and the pressure P2 in the through groove 5003-1. If the pressure in the through groove space 5004-1 and the pressure in the through groove space 5004-2 are the same, (for example, the pressure transmission holes 5012 (5012-1 and 5012-2) are opened and then connected to the same pressure environment) Or, if the process is closed at the same time, the pressure in these spaces will be the same.
  • 11 (d) and 11 (e) are developed systems of the embodiment shown in FIGS. 11 (a) to 11 (c), and a pair of facing capacitive elements shown in FIGS. 11 (a) to 11 (c) are arranged. Further, it is surrounded by a closed space (which is also a through groove) 5003-6 (5003-6-1, 5003-6-2, 5003-6-3, 5003-6-4), and this closed space 5003-6 is electrically conductive.
  • the side surface side is surrounded by the body substrate side wall 5002-6 (5002-6-1, 5002-6-2, 5002-6-3, 5002-6-4).
  • the upper surface of the closed space 5003-6 is closed by a plate 5009, and the lower surface of the closed space 5003-6 is closed by a plate 5010.
  • the conductor substrate 5002 is attached to the plates 5009 and 5010.
  • a pressure transmission hole 5016 is formed. Although it is formed on the plate 5010 in FIGS. 11D and 11E, it can also be formed on the plate 5009.
  • the pressure P1 is introduced from the pressure transmission hole 5012 (5012-1, 5012-2) formed in the through groove 5004 (5004-1, 5004-2) on the capacitive element side, and the pressure P2 is introduced from the pressure through hole 5016,
  • the diaphragms 5002-2-1 and 5002-3-1 of the capacitive element are deformed, and the pressure difference P1-P2 can be detected.
  • the through grooves 5003-6 (5003-6-1, 5003-6-2, 5003-6-3, 5003-6-4) and 5003-1 of the present invention are isolated from the external environment, FIG. Unlike the capacitive elements shown in a) to (c), the through grooves 5003-6 (5003-6-1, 5003-6-2, 5003-6-3, 5003-6- 4) and 5003-1.
  • the capacitive element shown in FIGS. 11A to 11C is put in a pressure vessel or the like, it can be in a state different from the pressure outside it.
  • the capacitive element is a conductor substrate 5002-6 (5002). -6-1, 5002-6-2, 5002-6-3, and 5002-6-4), the capacitive element can be isolated from the external environment, so that the reliability can be improved.
  • FIG. 11E is a side view of a cross section taken along line A1-A2 of FIG.
  • Contact holes 5007 5007-1, 5007-2) and electrodes / wirings 5008 (5008-1, 5008-2) are also formed.
  • the interelectrode distance c8 of the through groove 5003-1 changes due to the deformation of the conductor electrode side walls 5002-2-1 and 5002-2-2 on both sides thereof.
  • the capacitive element has a quadrangular shape (refers to the shape of a plan view, which is a three-dimensional prism), and may be a triangular shape, a pentagonal shape, or any other polygonal shape.
  • all side surfaces of the conductive substrate forming the rectangular shape function as a diaphragm, that is, the through groove 5022-1 existing in the center.
  • each side wall is 5020-1-1, 5020-1-2, 5020-1-3, 5020-1-4
  • the periphery thereof is surrounded by a through groove 5022-2 (5022-).
  • 2-1, 5022-2-2, 5022-2-3, 5022-2-4 through-holes of the conductive substrate side wall 5020-2
  • each side wall is 5020-2-1, 5020-2).
  • -2, 5020-2 3, 5020-2-4 and the perimeter of the through-groove 5023-2 (5023-2-1, 5023-2-2, 5023-2-3, 5023-2-4).
  • the groove is surrounded by a conductor substrate side wall 5020-3 (each side wall is 5020-3-1, 5020-3-2, 5020-3-3, 5020-3-4).
  • the side wall of the conductor substrate is deformed, for example, each side wall of 5020-1 is deformed due to the pressure difference between the through groove 5022-1 and the through groove 5022-2.
  • Each side wall of 5020-2 is deformed by the pressure difference of the groove 5022-3, so that the conductive substrate side wall 5020-1 is one electrode, the conductive substrate side wall 5020-2 is the other electrode, and the through groove 5022 is formed.
  • Capacitance elements are formed, and the entire periphery is a capacitance, so that a large capacitance can be made with a small area (in the case of only one surface, as shown in FIGS. 11 (d) and 11 (e)).
  • the capacity can be made only on two sides, and the capacity can be made only on three sides.
  • the capacity means the capacity whose capacity changes depending on the pressure difference.) (E2 and e3 shown in the figure, the thickness of the side wall to be deformed) may be selected according to the pressure used, the size of the diaphragm, and the characteristics of the material.
  • the thickness of the through groove width, j2 shown in the figure affects the capacity characteristic, so it is necessary to form the through groove with high accuracy. (You can change the If the same thickness of the side wall electrodes, the capacitance change becomes the same.
  • a large number of capacitive elements can also be made by repeating the process of surrounding the capacitive element shown in FIGS. 12A and 12B with a through groove and surrounding the conductive element with a conductive substrate.
  • the thickness of the outermost conductive substrate in FIG. 12A and FIG. 12B, the thickness e1 of 5020-3) should be thicker than the other side walls to be deformed so as not to be deformed by the pressure difference. desirable.
  • the width j1 of the through groove 5022-3 may not be managed so accurately, but the conductor side wall 5020-2 should not be in contact with the outermost conductor side wall 5020-3 within the measurement pressure.
  • a rectangular conductive substrate 5020 can be arranged and surrounded by a through groove and the periphery as a side wall electrode of the conductive substrate. In this case, the conductor substrate 5020 at the center is not deformed but can be used as an electrode.
  • FIG. 12B is a side view of the A1-A2 cross section of FIG.
  • a plate 5009 is attached to the upper surface of the conductor substrate 5020, and a plate 5010 is attached to the lower surface to make the through groove a closed space.
  • Pressure transmission holes 5024 (5024-1, 5024-2) are formed in the plate 5009 in the through grooves 5022-3 (5022-3-1, 5022-3-3). Since the through grooves 5022-3-1 and 5022-3-3 are connected, one pressure transmission hole 5024 (5024-1, 5024-2) may be provided.
  • a pressure transmission hole 5023 is formed in the plate 5009 also in the central through groove 5022-1.
  • pressure transmission holes 5025 are formed in the plate 5010 in the through grooves 5022-2 (5022-2-1, 5022-2-3). Since the through grooves are connected to 5022-2-1, 5022-2-3, one pressure transmission hole 5025 (5024-1, 5024-2) may be provided.
  • the pressure of the through groove 5022-1 and the pressure of the through groove 5022-3 may be different, but in this case, the pressure of the portion connected to the pressure transmission hole is also different.
  • P1 is introduced.
  • the conductor substrate side wall 5020-2 (5020-2-1, 5020-2-2, 5020-2) surrounding the through groove 5022-2.
  • the change in capacity can be calculated based on the above-described formula, and the pressure difference can be calculated from the change in capacity.
  • the capacitance of the through groove 5022-2 which is a capacitance space
  • FIGS. 12 (a) and 12 (b) if the polygonal shape of the polygonal shape is increased, the shape will ultimately be circular or elliptical.
  • FIGS. FIG. 12C shows a plan view thereof.
  • a number of capacitive elements may be formed by surrounding the periphery with a through groove and surrounding the periphery with a conductor substrate. These capacitive elements can be connected in parallel or in series or other elements by forming contact holes and electrical lines / wirings in the plates 5009 and 5010.
  • the capacitive element shown in FIGS. 12C and 12D is a circular element, but considering the thickness direction, it is a cylindrical (or column) capacitive element.
  • the outermost conductor substrate can also be used as an electrode, but it cannot be made very thin, so that it is usually an electrode whose side wall is not deformed.
  • the outermost electrode is exposed and used as an electrode, the characteristics of the capacitive element may be deteriorated due to the influence of moisture, contamination, or the like. Therefore, it is better to form a protective film or a protective resin.
  • the outermost conductive substrate is not used as an electrode, but is preferably used as a protective substrate for the capacitive element package. It is better to increase the thickness in consideration of strength and environmental resistance.
  • the outermost side does not need to be circular, and can have any shape, for example, a quadrangular shape or a rectangular shape (in a three-dimensional view, a quadrangular prism shape or a rectangular column shape).
  • FIG. 12 (d) shows a side view of the A1-A2 cross section of FIG.
  • a plate 5009 is attached to the upper surface of the conductor substrate 5030, and a plate 5010 is attached to the lower surface of the conductor substrate 5030 to make the through groove a closed space.
  • a pressure transmission hole 5033 is formed in the plate 5009, and in the through groove 5032-2, a pressure transmission hole 5035 (5035-1, 5035-2) is formed in the plate 5010, and the through groove 5032-3 is formed.
  • pressure transmission holes 5034 (5034-1 and 5034-2) are formed.
  • the through groove is formed in a circular shape (cylindrical or cylindrical) (also the through groove 5032-2), and the side wall electrodes 5030-1 and 5030 of the conductor substrate sandwiching the through groove (the through groove 5032-2).
  • -2 is also formed in a circular (cylindrical or cylindrical) shape, and by forming it concentrically, the width (distance between electrodes) r (j2) of the through-groove 5032-2 serving as a capacity space is constant everywhere. . If the side wall electrodes and the through grooves sandwiched between them are also formed concentrically, the deformation amount of the side wall electrode 503-1 becomes almost constant everywhere, and the deformation amount of the side wall electrode 5030-2 becomes almost constant everywhere.
  • FIGS. 12C and 12D are circular shapes, the width (distance between electrodes) of the entire through groove serving as the capacitor space can be made constant by using an elliptical shape or other closed curve shape. Furthermore, these curved and polygonal capacitative elements can be combined. Since only the outermost shape can be made into a shape that is easy to handle (for example, a square shape or a rectangular shape), it can be freely combined depending on the pressure.
  • FIG. 5 shows the structure of a semiconductor pressure sensor according to some embodiments of the present invention.
  • deep grooves 16, 17, 18, 19, and 20 exist on the surface of the semiconductor substrate 11 in the thickness direction of the semiconductor substrate.
  • This groove has a rectangular parallelepiped shape, and has a rectangular shape when viewed from above the surface of the semiconductor substrate.
  • Insulating films 12 exist in these trenches and the semiconductor substrate surface.
  • the conductive film 13 is present on the front and bottom surfaces of the grooves 16, 18, and 20 and on a desired portion of the semiconductor substrate.
  • the conductive film 13 does not exist in the groove 17 existing between the grooves 16 and 18. Further, the conductive film 13 does not exist in the groove 19 existing between the grooves 18 and 20.
  • the grooves 17 and 19 are covered with a cap 14, and the interiors of the grooves 17 and 19 are airtight spaces 15 and 25.
  • channels of 16, 18, and 20 are open
  • the internal pressure of the airtight spaces 15 and 25 is normally in a low pressure state close to vacuum. However, depending on the pressure of the external environment, there may be a reduced pressure state close to atmospheric pressure, or a pressure higher than atmospheric pressure. Alternatively, another pressure may be applied by providing a pressure transmission hole in the lid.
  • the thickness of the semiconductor substrate 24 is thin, and the semiconductor substrates 21 to 24 can be deformed by pressure. These thicknesses may not be the same, but pressure calculation is easier when the thicknesses are the same.
  • the electrostatic capacitance between the electrode A and the electrode B in FIG. 5A is the series connection of the insulating film 12-semiconductor substrate 21-insulating film 12-space 15-insulating film 12-semiconductor substrate 22-insulating film 12. It has become.
  • the semiconductor substrate side walls 21 and 22 are deformed, and the capacitance of the space 15 changes. Therefore, since the electrostatic capacitance between the electrode A and the electrode B also changes, the pressure difference can be calculated. Similarly, since the capacitance between the electrode B and the electrode C also changes, the pressure difference can be calculated. Although the pressure can be calculated even with one capacitance measuring unit structure, if a large number of these capacitance measuring structures are arranged, the amount of change in capacitance due to the pressure difference increases, so the accuracy of pressure detection increases.
  • an insulating film 12 such as a SiO2 film is formed on the inner surface and the first surface of the recess, and a conductor film 13 such as a PolySi film, an Al film, or a copper film is laminated, and necessary patterning is performed. In this patterning, the conductor film 13 in the recesses 17 and 25 is removed, and the conductor film 13 in the recesses 16 and 19 is not removed.
  • Patterning in the recess is not necessary, and patterning on the first surface of the semiconductor substrate 11 can be performed by a normal photolithography method.
  • This conductor film 13 can also be used as wiring and electrodes.
  • a cap substrate 14 is attached to the first surface of the semiconductor substrate 11 using an adhesive or the like, and a desired location is removed.
  • the recesses 17 and 25 are covered with the cap substrate 14, and the recesses 16, 18, and 20 are opened.
  • the cap substrate 14 already having holes may be attached by mask alignment.
  • the substrate is Si
  • the insulating film 12 can be removed and the glass substrate can be anodically bonded.
  • the recesses 16, 18, and 20 may be covered and only a part of the pressure transmission holes may be opened.
  • a protective film such as a SiN film can be formed on the conductor film 13 before and after the cap substrate 14 is attached, and necessary windows can be opened (pad portions).
  • the substrate side walls 21, 22, 23, and 24 are deformed by a pressure difference, but the substrate sidewalls 21, 22, 23, and 24 are more easily deformed as the thickness t is thinner.
  • a Si semiconductor substrate although it depends on the pressure difference, it is about 1 ⁇ m to 30 ⁇ m, preferably about 1 ⁇ m to 15 ⁇ m. If a material having a low Young's modulus (plastic or rubber) is used as the substrate, this t can be made thicker.
  • the production method is also simplified by using the imprint method.
  • the capacitance increases by increasing the groove depth h and the groove length (depth), so the sensitivity is improved, and the sensitivity is improved to about 50 ⁇ m or more, preferably about 100 ⁇ m or more, more preferably about 500 ⁇ m or more.
  • the width of the grooves 17 and 25 also contributes to the capacitance, it is preferable that the width is small.
  • the width is preferably about 10 ⁇ m to 100 ⁇ m, preferably about 10 ⁇ m to 50 ⁇ m so that the pressure can be transmitted smoothly.
  • the width of the grooves 16, 18, and 20 does not affect the characteristics, but it is desirable that the pressure can be transmitted smoothly and an insulating film or a conductor film can be stacked inside the groove, and is preferably about 5 ⁇ m to 10 ⁇ m or more.
  • the cap 57 is an insulating substrate such as glass, ceramic, or polymer material.
  • FIG. 5B is a modification of FIG. 5A, and the counter electrode 13 (13-1, 2, 3, 4) is formed on the substrate side wall of the grooves 17 and 19 that become the capacity spaces 15 and 25.
  • FIG. Thereby, the capacitance change due to the pressure difference occurs between the two electrodes 13-1 and 2 or 13-3 and 4, so that the sensitivity is increased.
  • the conductor film on the bottom surface of the recess and on the opposite side surface on the depth side of the recess is removed by etching after patterning the photosensitive film.
  • the cap substrate 14 is airtightly adhered to the conductor film 13 (13-1, 2, 3, 4) with an adhesive or the like.
  • the groove portions 91 and 92 and the groove portions 93 and 94 are formed from both surfaces (the front surface and the back surface) of the semiconductor substrate 81, and the groove portions do not reach the opposite surface without being completely penetrated.
  • a capacitance is formed by utilizing the overlapping portion of the groove.
  • Insulating films 82 and 83 and conductor films 84 and 85 are formed inside the groove and on the front and back surfaces of the semiconductor substrate. The conductor film 84 inside the groove is removed at the bottom and side portions (in the direction perpendicular to the paper surface) and becomes an electrode opposite to each other to form a capacitor.
  • the groove is covered with caps 86 and 87 to form pressure conduction holes 88 and 89. Pressure is transmitted from the pressure conduction hole. For example, P1 pressure is applied from the pressure conduction holes 89 of the grooves 93 and 94 on the front surface side of the semiconductor substrate, and P2 pressure is applied from the pressure conduction holes 88 of the groove portions 91 and 92 on the back surface side of the semiconductor substrate. Due to the pressure difference between P1 and P2, the semiconductor substrate side wall 81 (81-1) between the groove portions 91 and 94 and the semiconductor substrate side wall 81 (81-2) between the groove portions 92 and 94 become the groove portions 92 and 93. The semiconductor substrate side wall 81 (81-3) between them is deformed (curved). Due to these deformations, the groove widths of the groove portions 91 to 94 change, and the capacitance generated in the counter electrode formed on the side wall of the groove portion changes. This change can be used to form a pressure sensor.
  • the present invention can also create a pressure sensor using piezoresistance.
  • a piezoresistor is formed in a groove or a through-hole side wall (which becomes a diaphragm). Since this side wall (partition wall) is deformed by pressure fluctuation, the resistance of the piezoresistor also changes. The pressure can be detected using this variation.
  • the piezoresistor is also formed in a plane with respect to the semiconductor substrate.
  • the present invention is a side wall (partition) of the groove or the through hole (these are the diaphragms as in the case of the capacitor). Therefore, the area in the semiconductor substrate can be made very small.
  • An object of the present invention is to reduce the size of the semiconductor pressure sensor and increase the pressure detection sensitivity.
  • the number of pressure sensor chips that can be taken from the semiconductor substrate (wafer) can be increased. Furthermore, since the capacity can be increased easily, the sensitivity of the capacitive pressure sensor can be increased. Furthermore, since LSI process such as photolithography method is used, it is possible to create the groove side wall (partition wall) which becomes the space and diaphragm part precisely and accurately, so that very thin diaphragm and narrow space can be formed, which also makes the pressure sensor sensitivity Can be increased.
  • Various crystal planes can be selected for the side wall surface of the present invention. For example, when the crystal plane (front surface) of the silicon substrate 9001 is a (100) plane, the side wall surface 9101 is a (0xx) plane.
  • the resistor 9111 can be formed in various orientations with respect to the side wall surface. For example, if the side wall surface is a (010) plane, the piezoresistance effect is maximized if the resistor 9111 is formed in the ⁇ 110> direction, so that the resistance change can also be increased.
  • FIG.13 (a) is a figure which shows sectional drawing (in another embodiment) of the vertical pressure sensor of this invention.
  • the pressure sensor of the present invention is a substrate composed of a first surface (main surface) and a second surface (back surface), and a second surface adjacent to the concave portion (first concave portion) formed on the first surface and the first concave portion.
  • a pressure sensor having a diaphragm as a side wall of the substrate sandwiched between recesses (second recesses) formed in the first conductor film, the first conductor formed on the substrate of the first recesses The first piezoelectric film formed on the film, the second conductive film formed on the first piezoelectric film, and / or the third conductive film formed on the substrate of the second recess , A pressure sensor including a second piezoelectric film formed on the third conductive film and a fourth conductive film formed on the second piezoelectric film.
  • first recesses 126 and 127 are groove-shaped recesses formed from the first surface (upper surface in FIG. 13A) side of the substrate 111.
  • the second recesses 128, 129, and 130 are groove-shaped recesses formed from the second surface (lower surface in FIG. 13A) side of the substrate 111.
  • the groove or recess formed in the substrate is formed from the main surface (first surface) of the substrate or the back surface (second surface) of the substrate, and the main surface (first surface) of the substrate or the substrate.
  • This groove or recess is formed by anisotropic dry etching, and the side surface is ideally perpendicular to the main surface (first surface) of the substrate or the back surface (second surface) of the substrate. There may be a curved surface due to etching variation (fluctuation) or the like, or a slight inclination (preferably 10 degrees or less, more preferably 5 degrees or less) with respect to the vertical. (Substantially perpendicular means generally preferably 10 degrees or less, more preferably 5 degrees or less with respect to the vertical direction.
  • this angle means the average
  • the depth of the side surface of the recess has a distance (for example, 1 ⁇ m to 2000 ⁇ m, which may be a thickness of 2 mm or more depending on the thickness of the substrate). Some of the sides may exceed this angle, but the average of all the angles is taken to represent this angle.)
  • the bottom of the groove or recess may be present in the substrate or may penetrate the substrate. May not exist in the substrate. When the bottom surface of the groove or the recess exists in the substrate, that is, when the groove or the recess does not penetrate the substrate, the bottom surface is ideally parallel to the main surface (first surface) or the back surface (second surface) of the substrate.
  • the surface is a curved surface due to variation (variation) in anisotropic dry etching, or inclined slightly (preferably 10 degrees or less, more preferably 5 degrees or less) with respect to parallelism There is also. In some cases, this inclination angle is larger, but in this case, it means an average angle.
  • the groove or the recess penetrates the substrate, that is, when the main surface (first surface) of the substrate or the back surface (second surface) of the substrate has an opening, the groove or the recess is formed as a through groove (through hole). ) And of course there is no bottom surface in the substrate. However, even in the case of the through groove, the main surface (first surface) or the back surface (second surface) side of the substrate is covered with another substrate (sometimes referred to as a thin plate). Is sometimes called the bottom surface of the through groove.
  • the first recess 126 is adjacent to the second recess 128, the (substrate) side wall 132 of the substrate 111 exists between the first recess 126 and the second recess 128, and the first recess 126 and the second recess 128 are formed on the substrate 111. It is separated by a side wall 132.
  • the first recess 127 is adjacent to the second recess 128, the side wall 133 of the substrate 111 exists between the first recess 127 and the second recess 128, and the first recess 127 and the second recess 128 are formed by the side wall 133 of the substrate 111. It is separated.
  • the first recess 126 and another second recess 129 adjacent to the first recess 126 are separated by the side wall 131 of the substrate 111 facing the side wall 132 with the first recess 126 interposed therebetween.
  • the first recess 127 and another second recess 130 adjacent to the first recess 127 are separated by the side wall 134 of the substrate 111 facing the side wall 133 with the first recess 127 interposed therebetween.
  • the first recesses 126 and 127 have a groove shape (substantially rectangular parallelepiped shape) formed substantially perpendicular to the first surface of the substrate 111, and the bottom 135 of the substrate 111 exists at the bottom of the first recess 126.
  • the bottom 136 of the substrate 111 is present at the bottom of the first recess 127.
  • the second recesses 128, 129, and 130 have a groove shape (cuboid shape) formed substantially perpendicular to the second surface of the substrate 111, and the bottom of the second recess 128 (see FIG. 13A).
  • the upper portion 140 of the substrate 111 exists in the upper portion.
  • the first recesses 126 and 127 have side walls in a direction perpendicular to the paper surface, and are separated from the second recesses formed from the second surface side of the substrate 111.
  • an insulating film 112 is formed on the substrate 111, a conductor film 114 (becomes a lower electrode) thereon, a piezoelectric film 116 is formed thereon, and a conductor film 118 (upper portion is formed thereon).
  • An insulating film 120 is formed thereon.
  • the inside of the first recesses 126 and 127 has the same film structure.
  • an insulating film 113 is formed on the substrate 111, and a conductor is formed on the insulating film 113 (referred to as an upper portion in FIG. 13A.
  • a film 115 (to be a lower electrode), a piezoelectric film 117 thereon, a conductor film 119 (to be an upper electrode) thereon, and an insulator film 121 are formed thereon.
  • the inside of the second recesses 128, 129, and 130 has a similar film structure.
  • the reason why the insulating film 112 is sandwiched between the substrate 111 and the conductor film 114 is to prevent a low electrical connection between the conductor film 114 and the substrate 111.
  • the substrate 111 is an insulator such as glass, plastic, or ceramic, the insulating film 112 is not necessary. However, in order to prevent electrical contact with other elements or conductor films, if there are other elements or conductor films. In some cases, an insulating film 112 is provided. Further, the insulating film 112 may be provided for the purpose of improving the adhesion between the substrate 111 and the conductor film 114.
  • a thin plate (first thin plate) 122 is attached to the upper surface of the substrate 111.
  • the first thin plate 122 is attached to the insulating film 120 and covers the first recesses 126 and 127.
  • the recess spaces of the first recesses 126 and 127 become airtight spaces, and the pressure is kept constant.
  • the pressure introduction holes 137 and 138 are formed in the first thin plate 122 so that the pressure P1 can be introduced from the outside.
  • a thin plate (second thin plate) 123 is attached to the lower surface of the substrate 111.
  • the second thin plate 123 is attached to the insulating film 121 and covers the second recesses 128, 129 and 130.
  • the recess spaces of the second recesses 128, 129 and 130 become airtight spaces, and the pressure is kept constant.
  • the pressure introducing hole 139 and the like are formed in the second thin plate 123 so that the pressure P2 can be introduced from the outside.
  • the contact hole 151 is formed through the insulating film 120 and the piezoelectric film 116 for electrical connection to the conductor film (lower electrode) 114. In FIG.
  • the conductor film 118 in the region where the contact hole 151 is formed is removed in advance.
  • a conductor film 152 is stacked in the contact hole 151.
  • the conductor film 152 is formed after the insulating film is formed on the sidewall.
  • An electrode / wiring (conductor film) 153 is formed on the conductor film 152. Thereby, electrical connection can be made from the conductor film (lower electrode / wiring) 114 to the electrode / wiring (conductor film) 153 through the conductor film 152 in the contact hole 151.
  • the contact hole 154 is formed through the insulating film 120 for electrical connection to the conductor film (upper electrode) 118.
  • a conductor film 155 is formed in the contact hole 154.
  • An electrode / wiring (conductor film) 156 is formed on the conductor film 155. Thereby, electrical connection can be made from the conductor film (upper electrode / wiring) 118 to the electrode / wiring (conductor film) 156 through the conductor film 155 in the contact hole 154.
  • the conductor film may be formed after forming the contact hole in the first thin plate without removing the first thin plate 122. In this case, when the first thin plate is a conductor (including a case where the insulating property is low), an insulating film is formed on the side wall of the contact hole before the conductor film is formed. One thin plate 122 may not be contacted.
  • the conductor film is formed after forming the insulating film on the side wall of the contact hole so that the conductor film does not contact the substrate 111.
  • electrodes / wiring may be taken out from the back side (second surface side) of the substrate 111 to the outside. This method may be performed by reversing the method of taking out the electrodes / wiring from the front side (first surface side) of the substrate 111 described above.
  • names are contact hole 160, conductor film (lower electrode) 115, insulating film 161, conductor film 162, conductor film 182, electrode / wiring (conductor film) 163, electrode / wiring (conductor film) 163) , Contact hole 157, conductor film (lower electrode) 119, conductor film 158, electrode / wiring (conductor film) 159)
  • FIG. 13B is a diagram schematically showing the structure of the vertical pressure sensor of the present invention when pressure is applied.
  • the laminated structure of the thin film in FIG. 13B is the same as the structure in FIG. That is, the substrate side wall 21 in FIG. 13B is considered as the substrate side wall 132 in FIG. 13A, and the substrate side wall 41 in FIG. 13B is considered as the substrate side wall 133 in FIG.
  • An insulating film 27 is formed on the outside of the substrate side wall 21, a conductive film 28 is formed thereon, a piezoelectric film 29 is formed thereon, a conductive film 30 is formed thereon, and an insulating film 31 is formed thereon.
  • An insulating film 22 is formed on the inner side of the substrate side wall 21, a conductive film 23 is formed thereon, a piezoelectric film 24 is formed thereon, a conductive film 25 is formed thereon, and an insulating film 26 is formed thereon. Further, an insulating film 47 is formed on the outside of the substrate side wall 41 facing, a conductive film 48 is formed thereon, a piezoelectric film 49 is formed thereon, a conductive film 50 is formed thereon, and an insulating film 51 is formed thereon. ing.
  • An insulating film 42 is formed on the inner side of the substrate side wall 41, a conductive film 43 is formed thereon, a piezoelectric film 44 is formed thereon, a conductive film 45 is formed thereon, and an insulating film 46 is formed thereon.
  • Substrates bottom or top, 135, 136, 140, etc. in FIG. 13A also exist at the top and bottom of the substrate side walls 21 and 41, but are omitted in FIG. Only shows.
  • the thin plate (first thin plate) 32 and the thin plate (second thin plate) 33 correspond to the thin plates 122 and 123 in FIG. However, in FIG.
  • the upper portion of the first recess is the first thin plate 122
  • the lower portion of the first recess is closed by the substrate 111
  • the upper portion of the second recess is the substrate 111
  • the lower portion of the second recess is the substrate 111
  • the lower portion of the second recess Is closed by a second thin plate 123.
  • a pressure introduction hole 34 is provided in the second thin plate 33 in a space 37 surrounded by the substrate side walls 21 and 41 and the thin plates 32 and 33, and a pressure P2 can be applied from the outside.
  • a pressure introduction hole 35 is provided in the second thin plate 33 in the space 38 outside the substrate side wall 21 so that the pressure P1 can be applied from the outside.
  • a pressure introducing hole 36 is provided in the second thin plate 33 in the space 39 outside the substrate side wall 41, and a pressure P3 can be applied from the outside.
  • a pressure P3 can be applied from the outside.
  • the first recesses 126 and 127 in FIG. 13A correspond to the spaces 38 and 39
  • the second recess 128 in FIG. 13A corresponds to the space 37.
  • These pressure introducing holes 34, 35, and 36 can be provided in the first thin plate 32, and may be appropriately selected so that external pressure can be smoothly introduced.
  • the internal space 37 is hermetically sealed and the internal pressure P2 is constant, and P1 and P3 correspond to the deformation amount due to the pressure difference of the substrates 21 and 41 with respect to the pressure P2.
  • the pressure can be detected.
  • the internal space 37 pushes the substrate side wall 21 and the thin film laminated thereon to the internal space 38 side by the pressure difference P2-P1, and the substrate side wall 21 is deformed outward, that is, toward the space 38.
  • the substrate side wall 21 and the like (including other various films) and the substrate side wall 41 and the like (including other various films) are suppressed from being deformed by the upper and lower first thin plates and the second thin plate. Since the other portions such as the substrate side wall 21 and the substrate side wall 41 are not restricted, they are deformed by the force due to the pressure difference, and in particular, the vicinity of the central portion is most deformed.
  • the upper portion of the space 38 is an upper substrate (not shown in FIG. 13 (b), but the upper portion 140 of the substrate in FIG. 13 (a)), a thin film laminated thereon, Deformation is suppressed by the first thin plate 32 (the first thin plate 122 in FIG. 13A) adhering to the top.
  • the lower part of the space 38 is the bottom of the substrate (not shown in FIG. 13 (b), but the substrate bottom 135 in FIG. 13 (a)), the thin film laminated thereon, and the second thin plate 33 (on the top).
  • the deformation is suppressed by the second thin plate 123) in FIG.
  • the vicinity of the center of the substrate side wall 21 is most deformed, and the peripheral edge of the substrate side wall is hardly deformed.
  • the substrate side wall 21 is deformed into a curved shape.
  • the thin film laminated on the substrate side wall 21 is similarly deformed into a curved shape. Accordingly, electric charges are polarized on both sides of the piezoelectric film 24 distorted in a curved shape, and a voltage difference V 1 is generated between the conductor films 23 and 25 stacked on both sides of the piezoelectric film 24. Similarly, charges are polarized on both sides of the piezoelectric film 29 distorted in a curved shape, and a voltage difference V 2 is generated between the conductor films 28 and 30 stacked on both sides of the piezoelectric film 29. That is, if the conductor wiring B3 is connected to the conductor film 23 and the conductor wiring B4 is connected to the conductor film 25, the charge can be taken out.
  • the potential difference therebetween becomes V2, and the charge can be taken out.
  • the piezoelectric film 24 and the piezoelectric film 29 are made of the same material and have the same thickness and the same conditions (for example, when sputtering is performed, the sputtering conditions are the same, and the subsequent heat treatment conditions are also the same).
  • the piezoelectric film 24 and the piezoelectric film 29 are deformed to the same extent almost in accordance with the deformation of the side wall 21, so that the generated potential difference (charge) is the same.
  • the lower part of the space 39 is the bottom of the substrate (not shown in FIG. 13 (b), but the substrate bottom 136 in FIG. 13 (a)), the thin film stacked thereon, and the second thin plate 33 ( The deformation is suppressed by the second thin plate 123) in FIG. As a result, the vicinity of the center of the substrate side wall 41 is most deformed, and the periphery of the substrate side wall is hardly deformed. As shown in FIG. 13B, the substrate side wall 41 is deformed into a curved shape. The thin film laminated on the substrate side wall 41 is similarly deformed into a curved shape.
  • the piezoelectric film 44 and the piezoelectric film 49 are made of the same material with the same thickness and the same conditions (for example, when sputtering is performed, the sputtering conditions are the same, and the subsequent heat treatment conditions are also the same).
  • the piezoelectric film 44 and the piezoelectric film 49 are deformed to the same extent almost in accordance with the deformation of the side wall 41, so that the generated potential difference is the same.
  • ⁇
  • the direction of displacement is convex in the B6 side and the B8 side and deformed in the same direction, whereas the B5 side and B7 side are both deformed in opposite directions. , B6 and B8, and B5 and B7 can be connected to each other, so that a potential difference (2
  • the substrate side wall 21 is deformed by the pressure difference P2-P1, and the piezoelectric bodies 24 and 29 are also deformed accordingly.
  • a voltage V1 is generated between B1 and B2, and a potential V2 is generated between B3 and B4.
  • the piezoelectric bodies 24 and 29 are deformed by the pressure difference P2-P1, and when the pressure difference P2-P1 is increased, the deformation amount of the piezoelectric bodies 24 and 29 is increased. Since V1 and V2 increase as the amount of deformation increases, if the relationship between the pressure difference P2-P1 amount and V1 or V2 is determined in advance, the pressure difference is determined from the measured V1 or V2 value. P2-P1 can be obtained.
  • the substrate side wall 41 is deformed by the pressure difference P2-P3, and the piezoelectric bodies 44 and 49 are deformed accordingly.
  • a voltage V3 is generated between B8 and B7, and a potential V4 is generated between B6 and B5.
  • the piezoelectric bodies 44 and 49 are deformed by the pressure difference P2-P3, and the amount of deformation of the piezoelectric bodies 44 and 49 increases as the pressure difference P2-P3 increases. Since V3 and V4 increase as the amount of deformation increases, if the relationship between the pressure difference P2-P3 amount and V3 or V4 is determined in advance, the pressure difference is determined from the measured V3 or V4 value. P2-P3 can be obtained.
  • V3 and V4 when
  • , a potential difference of about twice can be obtained, so the sensitivity can be increased about twice, and the pressure difference P2-P3 Accuracy can be increased. Furthermore, if either P2 or P3 is known, the other pressure can be determined. If the side wall thicknesses of the substrate side walls 21 and 41 are approximately the same, the deformation amounts of the substrate side walls 21 and 41 are also approximately the same when P1 P3. V1, V2, V3, and V4 can be set to the same level (the material, thickness, and preparation conditions of the insulating film and the conductor film are set to the same level).
  • the conductor films 114 and 118 on the first recess need not be cut and may be connected as they are. Of course, necessary wiring patterning may be performed at a place other than the first recess.
  • the second recess (denoted by pressure P2) is also deformed in the same direction (the first recesses are either inflated or recessed at the same time, and are deformed opposite to the first recess).
  • the conductor films 115 and 119 on the recesses need not be cut and may be connected as they are. Of course, necessary wiring patterning may be performed at a place other than the second recess.
  • the insulating films 22, 27, 42, 47 are formed so that current from the conductor films 28, 23, 43, 48 does not leak to the substrate side walls 21, 41. When it is a body, it does not have to be formed. However, when the conductive films 28, 23, 43, 48 and the substrate side walls 21, 41 have poor adhesion, the insulating films 22, 27, 42, 47 may be formed as adhesion improving films. (This is naturally the same as that shown in FIG.
  • the insulating films 26, 31, 46, 51 are intended to prevent current from leaking from the conductor films 25, 30, 45, 50. In addition, it also serves to protect the conductor films 25, 30, 45 and 50. Of course, it is not necessary to form it when current leakage or protection is not necessary. (This is naturally the same as that shown in FIG. 13A.)
  • the recess has a rectangular parallelepiped shape, and the thin substrate side wall sandwiched between the first recess and the second recess is deformed by the pressure difference.
  • the amount of deformation increases when a material having a low Young's modulus is used, the amount of deformation increases when the substrate side wall is thinned, and the amount of deformation increases when the area of the substrate side wall is increased.
  • the side wall is deformed, if the polarizability that causes a voltage difference of the piezoelectric material is small, the potential difference is small and the pressure difference is difficult to detect. If a material having a large charge generated in the body is used, it is easy to detect the pressure difference. Therefore, it is necessary to design a pressure sensor having an optimum condition by optimizing all these values.
  • the pressure sensor of the present invention using a piezoelectric film or a piezoelectric substrate utilizes deformation of the substrate side wall due to a pressure difference. Therefore, if the area of the substrate side wall deformed by the pressure P1 and the pressure P2 is increased, a larger charge can be taken out and the sensitivity of pressure detection is increased.
  • the first recesses 126 and 127 pressure P1
  • the pressure P2 are rectangular (cuboid)
  • the area of the pressure P2 is surrounded around the substrate side wall, but the four substrate side walls can be deformed. If they are formed with a small thickness, the four substrate side walls are deformed in the same manner, so that charges are generated from the respective side walls.
  • the length (width) W1 of the short side of the first recess is reduced, and a large number of the first sides of the rectangular first recess are arranged in parallel.
  • the interval W2 between the first recesses (which is also the width of the second recess 128, etc.) may be reduced. If the width of the substrate side wall is W0, W3 / (W1 + W2 + W0) first recesses are arranged in parallel between the width W3.
  • the second recessed portion surrounds the entire first recessed portion except that the second recessed portion exists between the first recessed portions. Therefore, the first recesses are independent, but the second recesses are connected.
  • the degree of piezoelectric element can be further increased.
  • the pressure sensor of the present invention described above can use a semiconductor substrate such as silicon, gallium arsenide, or silicon carbide (SiC), other elements (IC, transistor, resistor, capacitor, coil, various sensors, etc.) can be used together. Can be installed. For example, if it is mounted together with a transistor, an IC, etc., the pressure sensor of the present invention and a device for controlling and processing it can be put in one chip. Therefore, compared to a two-chip or multiple-chip configuration of a pressure sensor and an IC, the entire mounting board can be reduced in size and external wiring can be reduced, so that the reliability of the entire device can be greatly increased. .
  • the first concave portion on the first surface side of the substrate shown in FIGS. 13A and 13B, the second concave portion on the second surface side of the substrate, and the side wall sandwiched between the first concave portion and the second concave portion are diaphragms.
  • An example of a method of manufacturing a pressure sensor having a piezoelectric film on the diaphragm and a conductive film that is formed on both surfaces across the piezoelectric film and transmits charges generated in the piezoelectric film will be described below. .
  • the substrate 111 is a semiconductor substrate, an insulator substrate, or a conductor substrate, and the thickness thereof can be determined by, for example, the substrate material strength, and the substrate material strength can also be determined by the elastic coefficient and Poisson's ratio of the substrate material.
  • Various substrate sizes can be selected. For example, a circular substrate having a radius of 1 inch or more (a disc substrate in consideration of thickness), a square substrate having a side of 1 inch or more, or a rectangular substrate (a cuboid substrate in consideration of thickness).
  • a circular substrate having a diameter of 6 inches (about 150 mm diameter) and a thickness of 200 ⁇ m to 700 ⁇ m (this is also called a wafer.
  • active elements such as transistors and passive elements such as resistors, capacitors and coils can be fabricated on the substrate together with the pressure sensor of the present invention, and these elements and pressure sensors can be integrated into one chip.
  • a material having a small Young's modulus is easily bent with a smaller pressure difference, and can generate a large diaphragm deformation. Therefore, the sensitivity of the pressure sensor can be increased.
  • various plastic substrates having a thickness of 200 ⁇ m to 2 mm to 5 mm to 10 mm, and various rubber substrates.
  • An insulating film is formed on the first surface of the substrate 111, a photosensitive film such as a photoresist is formed thereon, and regions for forming the first recesses 126 and 127 are opened by an exposure method.
  • the photosensitive film may be a coating film such as a photoresist or a photosensitive dry film.
  • the insulating film is, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNy), a silicon oxynitride film (SiOxNy), or the like. These insulating films can be laminated by a PVD method such as CVD or sputtering. Alternatively, a silicon oxide film formed by an SOG (Spin On Glass) film may be used.
  • a silicon oxide film (SiO2) formed by an oxidation method may be used.
  • This insulating film is used for satisfactorily patterning the photosensitive film, forming the first recesses well, and / or serving as an etching stopper when forming the recesses.
  • a photosensitive film can be directly formed on the first surface of the substrate 111 without forming an insulating film on the first surface of the substrate 111.
  • the thickness of the insulating film may be about 100 nm or more for good patterning of the photosensitive film, but for the etching stopper, it is determined in consideration of the etching selectivity between the substrate, the photoresist, and the insulating film.
  • the photoresist is completely etched during the recess etching and the recess needs to be etched, and the selectivity of the etching rate between the insulating film and the substrate is 10 (the substrate is fast), the remaining substrate is etched.
  • the depth is X
  • the insulating film disappears during the recess etching, the underlying substrate is exposed, and this portion of the substrate is also etched.
  • the etching selectivity and the thickness of the insulating film having the smallest size change amount can be determined.
  • the thickness of the photosensitive film the thickness is determined so that the photosensitive film does not disappear during the recess etching.
  • the etching selectivity between the photosensitive film and the concave portion is f
  • the etching amount of the concave portion is X
  • the thickness of the photosensitive film is required to be X / f or more
  • various variations for example, the etching variation of the concave portion, the initial photosensitivity
  • the thickness of the photosensitive film may be determined in consideration of the film variation.
  • the thickness of the photosensitive film needs to be at least 15 ⁇ m, and if the total variation is 30%, 20 ⁇ m It is sufficient to set the thickness.
  • the final thickness of the photosensitive film is set in consideration of the thickness required for the vertical etching of the concave portion.
  • the thickness of the photosensitive film is not the thickness before exposure but the thickness before patterning and etching. Therefore, after a heat treatment such as pre-baking before exposure of the photosensitive film, baking after exposure of the photosensitive film and after development, and the subsequent scum treatment, the thickness after the scum treatment is obtained.
  • the thickness of the imprint film after imprinting and after removing the imprint film at the bottom of the pattern recess for example, after O2 plasma treatment
  • the patterning shape of the photosensitive film is desirably a vertical pattern as much as possible in order to form the side surface of the first recess according to the pattern.
  • the insulating film exposed at the opening of the photosensitive film is removed by etching.
  • the etching shape of the insulating film is desirably a vertical pattern with less side etching as closely as possible to the patterning shape and dimensions of the photosensitive film.
  • the photosensitive film and the substrate 111 exposed at the opening of the insulating film are etched.
  • the first recess is preferably a vertical pattern that is faithful to the pattern of the photosensitive film and has little side etching. Since the amount of deformation with respect to pressure increases as the size of the substrate side wall serving as a diaphragm increases, the depth of the first recess is preferably deeper. For example, the depth is 50% to 90% with respect to the substrate thickness. When the substrate thickness is 500 ⁇ m, the depth of the first recess is 250 ⁇ m to 450 ⁇ m.
  • DRIE deep RIE
  • DRIE methods such as a Bosch process, low-temperature cooling etching, and an NLD (magnetic neutral loop discharge) method.
  • a deposition film such as an organic film or a patterned photosensitive film deposited in the recesses is removed.
  • the insulating film formed on the first surface of the substrate 111 may also be removed or may be left if necessary.
  • the subsequent conductor film may be disconnected at this portion, so it is necessary to remove the insulating film in advance. desirable.
  • an insulating film 112 is next laminated on the first surface side of the substrate 111.
  • the substrate 111 is an insulating substrate such as glass, ceramic, plastic, or rubber
  • the insulating film 112 may not be stacked. The purpose of the insulating film 112 is to prevent electrical connection between the conductor film 114 and the like laminated thereon and the substrate 111.
  • the insulating film is a silicon oxide film (SiOx), a silicon nitride film (SiNy), a silicon oxynitride film (SiOxNy), or the like.
  • These insulating films can be laminated by a PVD method such as CVD or sputtering.
  • a silicon oxide film formed by an SOG (Spin On Glass) film may be used.
  • a silicon oxide film (SiO2) formed by an oxidation method may be used.
  • the insulating film 112 has a thickness of 50 nm to 1000 nm, for example. This insulating film 112 is naturally laminated also on the side surface and the bottom surface of the first recess.
  • the conductive film is, for example, a doped polycrystalline silicon film, various silicide films, a transparent conductive film such as an ITO film, a nitride of a metal film (conductive nitride), an oxide of a metal film (conductive oxide) A metal film or an alloy film.
  • the metal film is aluminum, gold, silver, platinum, palladium, titanium, molybdenum, tungsten, copper, chromium, zinc, iron, nickel, and the like, and is an alloy of these metals.
  • These conductor films can be laminated by a CVD method or a PVD method such as sputtering or vapor deposition.
  • the thickness of the first conductor film is about 100 nm to 2000 nm.
  • the first conductive film may be a conductive film having two or more layers.
  • the first layer is a three-layer film of platinum film (Pt), titanium (Ti) thereon, and titanium nitride (TiN) thereon.
  • the piezoelectric film 116 is laminated on the conductor film 114.
  • Piezoelectric films are PZT (lead zirconate titanate), barium titanate, lead titanate, potassium niobate, lithium niobate, lithium tantalate, sodium tungstate, zinc oxide, lithium tetraborate, calcium titanate, phosphoric acid
  • Examples thereof include piezoelectric polymers such as aluminum, quartz, potassium sodium tartrate, and polyvinylidene fluoride, aluminum nitride, gallium phosphate, and gallium arsenide. These piezoelectric films can be stacked by sputtering, CVD, or the like. The thickness of the piezoelectric film is about 100 nm to 5000 nm.
  • a heat treatment necessary for improving the piezoelectricity of the piezoelectric film may be performed after the piezoelectric film is laminated.
  • the first conductor film 114 is not patterned, and the first conductor film is a sputter film and the piezoelectric film is also laminated by the sputtering method, a vacuum state can be secured by laminating with the same sputtering apparatus. However, the piezoelectric film can be continuously laminated on the first conductor film.
  • a conductive film (second conductive film) 118 is stacked.
  • the conductive film is, for example, a doped polycrystalline silicon film, various silicide films, a transparent conductive film such as an ITO film, a nitride of a metal film (conductive nitride), an oxide of a metal film (conductive oxide) A metal film or an alloy film.
  • the metal film is made of aluminum, gold, silver, platinum, titanium, molybdenum, copper, chromium, zinc, or the like, and is an alloy of these metals.
  • These conductor films can be laminated by a CVD method or a PVD method such as sputtering or vapor deposition.
  • the thickness of the second conductor film is about 100 nm to 2000 nm.
  • the second conductive film may be a conductive film having two or more layers.
  • the first layer is a three-layer film of titanium nitride (TiN), titanium (Ti), and platinum film (Pt).
  • the piezoelectric film 116 is laminated on the conductor film 114.
  • the piezoelectric film 116 is also deformed and charges are generated on both sides (upper surface, lower surface) of the piezoelectric film 116.
  • first conductor film 114 is in contact with the lower surface of the piezoelectric film 116, charges generated on the lower surface of the piezoelectric film 116 can be drawn out to the first conductor film 114.
  • second conductor film 118 is in contact with the upper surface of the piezoelectric film 116, charges generated on the upper surface of the piezoelectric film 116 can be drawn out to the second conductor film 118.
  • the insulating film 120 is, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNy), a silicon oxynitride film (SiOxNy), or the like. These insulating films can be laminated by a PVD method such as CVD or sputtering. Alternatively, an organic insulating film such as a polyimide film may be used.
  • the insulating film 120 serves to protect the pressure sensor including the first conductor film, the piezoelectric film 116, and the second conductor film 118.
  • the thickness of the insulating film may be 500 nm or more.
  • a thin plate (first thin plate) 122 is attached to the first surface side of the substrate 111.
  • the thin plate 122 covers and protects the first recesses 126 and 127.
  • the thin plate 122 is an insulating substrate, for example, a transparent insulating substrate such as glass, quartz, or plastic, or an opaque insulating substrate such as ceramic. In the case of a transparent insulating substrate, the lower pattern can be directly observed, so that pattern matching can be easily performed and alignment accuracy can be improved.
  • the thin plate 122 needs to be attached to the first surface of the substrate 111 with high accuracy. Further, a semiconductor substrate or a conductor substrate may be used as long as it does not come into contact with electrodes or the like. After applying or laminating an adhesive to a region where the thin plate 122 adheres to the substrate 111, the thin plate 122 is attached to the substrate 111.
  • the thickness of the thin plate is about 50 ⁇ m to 1000 ⁇ m, but it may be made thinner. Or it may be thicker.
  • attaching the thin thin plate 122 in a thin state may cause the thin plate 122 to be deformed in the attaching process. If there is such a possibility, a thin plate 122 is attached to another substrate via a thermosoftening adhesive (softening temperature Ts), and a desired pattern is formed on the thin plate 122 in this state (for example, the above-described thin plate 122).
  • Ts thermosoftening temperature
  • thermosetting adhesive (curing temperature Th) is applied to a predetermined portion of the thin plate 122, and another substrate (the thin plate 122 side) is attached to the substrate 111. If Th ⁇ Ts, the thin plate 122 can be firmly attached to the substrate 111 by performing heat treatment between Th and Ts. Thereafter, when the temperature is set to Ts or higher, the thermosoftening adhesive is softened and the separate substrate can be separated from the thin plate 122. As a result, even a very thin (100 ⁇ m or less or 50 ⁇ m or less) thin plate can be deposited on the first surface of the substrate 111.
  • a method of attaching a thin thin plate to another substrate 111 a method of attaching a thin plate to another substrate and then thinning the thin plate by CMP or BG method, or after forming a thermosoftening adhesive on another substrate, There is a method of forming a thin plate material by a coating method, a CVD method or a PVD method. After attaching the thin plate 122, an unnecessary portion of the thin plate may be removed by a photolithography method and an etching method. The thin plate 122 may be attached to the first surface of the substrate 111 by using the thin plate 122 on the first surface of the substrate 111 without applying an adhesive and applying pressure to perform normal temperature bonding or high temperature bonding. good.
  • a photosensitive film is formed and patterning for forming the contact hole 151 is performed.
  • the piezoelectric film 116 is etched to expose the first conductive film 112 in the contact hole 151. Since the second conductor film 118 has already been removed in this region, it is not necessary to remove the second conductor film 118 when forming the contact hole.
  • a photosensitive film is formed and patterning for forming the contact hole 154 is performed, and the insulating film 120 is etched to expose the second conductor film 118 in the contact hole 154.
  • the piezoelectric film 118 is also removed from this region in advance, it is not necessary to remove the piezoelectric film 118 at this point, and only the etching of the insulating film 120 is required, so that the contact hole 154 can be formed at the same time.
  • conductive films 152 and 155 are laminated, and electrode wirings 153 and 156 are further formed.
  • This contact hole and conductor film / electrode formation can be performed before the thin plate 122 is attached, or after the second recess is formed and the second thin plate is attached. After the thin plate 122 is attached to the substrate 111, a second recess or the like is formed on the second surface side of the substrate 111.
  • the formation methods and materials of the conductive films 158 and 162, the electrodes / wirings 159 and 163, and the thin plate (second thin plate) 123 are the same as those on the first surface side. Since the substrate side walls 131, 132, 133, 134 sandwiched between the first recess and the second recess serve as a diaphragm of the pressure sensor, it is necessary to form the thickness as uniform as possible.
  • the substrate 111 is made of a transparent material such as glass, quartz, or transparent plastic
  • the first concave portion can be seen from the second surface side, so that the alignment can be performed with considerably high accuracy.
  • the alignment accuracy can be improved by using light having a wavelength that can be transmitted through an opaque substrate such as a silicon substrate.
  • the first surface side is fixed by the thin plate 122 after the first recess is formed, the deformation of the substrate 111 can be reduced during the process, so that the accuracy of pattern formation can be improved.
  • the substrate 111 is fixed and reinforced by the thin plate 122 even after the second recess is formed, the substrate 111 is not deformed during the process. Further, after the second thin plate 123 is attached to the second surface side, both the first surface and the second surface of the substrate 111 are strengthened, so that the substrate is considerably sturdy.
  • FIG. 14 (f) is a diagram showing an embodiment (structure) of a structure in which the first concave portion and the second concave portion are formed in the piezoelectric substrate.
  • First recesses 226 and 227 and second recesses 228, 229 and 230 are formed in the piezoelectric substrate 211.
  • the side wall 234 separating the concave portion 227 and the second concave portion 230 is a piezoelectric substrate, and these side walls become a diaphragm that is deformed by the pressure difference between the pressure P1 of the first concave portion and the pressure P2 of the second concave portion.
  • An adhesion layer 212, a conductor film 214, and an insulating film 216 are laminated on the side walls and the surface side of the piezoelectric substrate 211 (that is, the first recess side).
  • a first thin plate 218 is attached to the surface side of the piezoelectric substrate 211.
  • the first thin plate 218 protects the piezoelectric device and has a pressure introduction hole to the first recess (a pressure introduction hole 237 to the first recess 226 and a pressure introduction hole 238 to the first recess 227).
  • a second thin plate 219 is attached to the back side of the piezoelectric substrate 211.
  • the second thin plate 219 protects the piezoelectric device, and pressure introduction holes to the second recesses (the pressure introduction holes 239 to the second recesses 222 and the pressure introduction holes to the second recesses 229 and 230 are not shown.
  • the pressure is smoothly transmitted to the second recess.
  • the pressure hole may be eliminated.
  • the conductor films 214 on the front side of the piezoelectric substrate 211 are connected together. That is, the conductor film 214 on the first recess side may be continuous.
  • the conductive films 214 on the side walls may be connected, and the potential is amplified, so that sensitivity is increased.
  • the conductor films 215 on the back side of the piezoelectric substrate 211 are connected together. That is, the conductor film 215 on the second recess side may be continuous. This is because, in the second recess, all the side walls swell or dent toward the first recess, so that the same-polarity potential (that is, all positive side or all negative side) is generated.
  • the conductive films 215 on the side walls may be connected, and the potential is amplified, so that sensitivity is increased.
  • the conductor film 214 on the first recess side and the conductor film 215 on the second recess side do not need to be patterned in the recess region, and can be simply stacked, so that the photolithography process can be eliminated. (However, it is necessary to form a wiring pattern in a region other than the concave portion. In particular, since the concave portion has a steep step shape, it is necessary to pattern by a special method such as an electroformed resist method or an oblique exposure method described later.
  • the piezoelectric substrate 235 at the bottom of the first recess 226 and the piezoelectric substrate 236 at the bottom of the first recess 227 Since the thin plate 219 adheres and is fixed to the second thin plate 219, it hardly deforms even when the pressure P1 fluctuates, so that almost no charge is generated in this region. Similarly, since the piezoelectric substrate 240 at the bottom of the second recess 228 is also adhered and fixed to the first thin plate 218, it hardly deforms even when the pressure P2 fluctuates. Almost no.
  • FIG. 13C is a schematic diagram showing the structure shown in FIG. 14F, that is, the case where the piezoelectric substrate is used as the side wall substrate and the side wall substrate is deformed by the pressure change of the recess.
  • FIG. 13C shows a cross-sectional structure similarly to FIG.
  • conductor films 54 and 56 are formed on both sides of the piezoelectric substrate side wall 53, and insulating films 55 and 57 are formed thereon.
  • Conductor films 59 and 61 are formed on both sides of the other piezoelectric substrate side wall 58 of the recess 68, and insulating films 60 and 62 are formed thereon.
  • a first thin plate 63 is attached to the upper part of the piezoelectric substrate side walls 53 and 58, and a second thin plate 64 is attached to the lower part of the piezoelectric substrate side walls 53 and 58.
  • the recess 68 is a closed space surrounded by the side walls and the thin plate, and a pressure P1 is applied from the pressure introducing hole 65 provided in the first thin plate 63.
  • a pressure introducing hole 66 to the concave portion 69 on the left side of the piezoelectric substrate side wall 53 is formed in the second thin plate 64, and a pressure P2 is applied.
  • a pressure introducing hole 67 to the concave portion 70 on the right side of the piezoelectric substrate side wall 58 is formed in the second thin plate 64, and pressure P3 is applied.
  • the piezoelectric substrate side wall 53 and the piezoelectric substrate side wall 58 bulge and deform outward (to the concave portion 69 and the concave portion 70 side) as shown in FIG.
  • the thickness of the piezoelectric substrate side walls 53 and 58 is constant with respect to the height direction of the side walls and is regulated by the upper and lower first thin plates 63 and the second thin plates 64 (that is, the piezoelectric substrate side walls 53 and 58 and the first thin plate 63 and the second thin plate 64 do not move)
  • the vicinity of the center of the piezoelectric substrate side walls 53 and 58 is most deformed.
  • an insulating film 271 is formed on the first surface (front surface) of the piezoelectric substrate 211, a photoresist 272 is further formed thereon, and a window 273 for forming a first recess is formed.
  • the piezoelectric substrate is a substrate of a substance exhibiting a piezoelectric effect, and is also called, for example, lead zirconate titanate ⁇ Zirconate / lead titanate (Pb (Zr X Ti 1-X ) O 3 0 ⁇ x ⁇ 1).
  • PZT ⁇ barium titanate, lead titanate, potassium niobate, lithium niobate, lithium tantalate, sodium tungstate, zinc oxide, lithium tetraborate and other ceramics having a perovskite structure and a tungsten-bronze structure, Or quartz, quartz, Rochelle salt, topaz, tourmaline, berlinite (aluminum phosphate), aluminum nitride, gallium phosphate, gallium arsenide, etc., or a piezoelectric polymer ⁇ eg, polyvinylidene fluoride ⁇ , or these And the like.
  • the insulating film 271 is for protecting the surface of the piezoelectric substrate 211 and for improving the adhesion between the piezoelectric substrate 211 and the photoresist 272. However, the insulating film 271 does not have to be formed if unnecessary. .
  • the insulating film 271 is, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNy), or a silicon oxynitride film (SiOxNy) formed by a CVD method or a PVD method.
  • the thickness of the piezoelectric substrate 211 depends on the size of the piezoelectric element, but is about 1 ⁇ m to 2000 ⁇ m.
  • the piezoelectric substrate When the piezoelectric substrate is thin and difficult to handle, it can be attached to another substrate for processing.
  • the present invention can be applied even if the concave portion can be formed with high accuracy even if it is thicker than 2000 ⁇ m.
  • the thickness of the insulating film 271 is about 0.1 ⁇ m to 1 ⁇ m for the purpose of improving adhesion, but when the piezoelectric substrate 211 is etched, the photoresist 272 is also etched, but all the photoresist 272 is etched. In this case, since the insulating film 271 serves as a mask, it is necessary to leave the insulating film 271 at the end of etching of the piezoelectric substrate 211.
  • the thickness of the insulating film 271 is determined in consideration of them. Considering these, the thickness is approximately 0.1 ⁇ m to 3 ⁇ m.
  • the thickness of the photoresist 272 depends on the thickness of the piezoelectric substrate to be etched and at the same time depends on the etching selectivity between the photoresist film and the piezoelectric substrate at the time of etching. When the selection ratio is high (the piezoelectric substrate has a higher etching rate), the thickness of the photoresist 272 can be reduced. For example, when the thickness of the piezoelectric substrate is 300 ⁇ m and the etching selectivity is 10, the thickness of the photoresist may be 30 ⁇ m or more.
  • the photoresist becomes thicker, an exposure method having a deep focal depth and a corresponding photoresist film are selected. Since the first recess is as faithful as possible to the photoresist pattern and as vertical as possible, the shape of the opening 273 of the photoresist is preferably as vertical as possible.
  • the insulating film 271 is removed by etching by dry etching or wet etching in the opening 273.
  • a hydrofluoric acid aqueous solution such as a BHF liquid (buffered hydrofluoric acid liquid) is used in the wet etching.
  • the silicon oxide film (SiOx) is etched using a dry etching apparatus with an etching gas such as CF4, C2F6, C3F8 or the like.
  • the etching shape is preferably as close to the mask pattern as possible and a vertical pattern. Therefore, anisotropic etching is desirable.
  • the insulating film 271 need not be etched.
  • the piezoelectric substrate 211 exposed in the opening 273 is etched using the photoresist 272 and the etched insulating film 271 as a mask.
  • the etching shape of the piezoelectric substrate 211 is preferably as faithful as possible to the mask pattern and a vertical pattern.
  • the vertical pattern can be formed by anisotropic etching using a dry etching apparatus with C3F8, SF6, Cl2, or the like as an etching gas. In this way, the first recesses 226 and 227 are formed in the piezoelectric substrate 211.
  • the photoresist pattern 272 is removed. This resist removal is performed using ashing with oxygen plasma, a nitric acid-based remover, or an organic resist remover. If there is no problem, the insulating film 271 may be left or removed.
  • the thickness of the substrate is Hs
  • the depth of the first recess is Hc1
  • the width of the first recess is Wc1.
  • Hs is 10 ⁇ m to 2000 ⁇ m
  • Hc1 is naturally smaller than Hs.
  • Hc1 is larger, the deformation of the side wall of the piezoelectric substrate 211 becomes larger, so that more charges are generated.
  • the width Wc1 of the first recess needs to be wide enough to be stacked up to the inside of the first recess. This naturally depends on the method of laminating these films. With the current technology, these films can be formed if the aspect ratio (Hc1 / Wc1) is about 20 in the case of the CVD method.
  • the PVD method it is about 10.
  • Hc1 300 ⁇ m
  • Wc1 30 ⁇ m
  • the aspect ratio 10
  • Wcl the smaller the planar size of the piezoelectric element in the piezoelectric substrate can be.
  • Wc1 needs to have a certain size, which is an advantageous direction for the above film formation.
  • a diaphragm can be formed on the four surfaces of the side wall of the rectangular parallelepiped first recess.
  • the depth (longitudinal direction) of the first concave portion is Lc1 (the length of the remaining one side of the rectangular parallelepiped first concave portion other than Hc1 and Wc1, and is shown obliquely in FIG. 14 (a). Since this figure is a cross-sectional structure, Lc1 is actually perpendicular to the paper surface), and Lc1 and Hc1 are preferably the same size (preferably), so Wc1 when four surfaces are diaphragms Also, it is (preferably) about the same size as Hc1.
  • the four side walls of the first recess When a diaphragm is formed, a size of 380 ⁇ m is required, but if a combination of the first concave portion and the second concave portion is arranged in one direction (for example, lateral direction), 70 ⁇ m is required for one combination, so about five sets
  • the diaphragm assembly enters the size of 380 ⁇ m.
  • the diaphragm arranged in one direction can be made smaller than the diaphragm which forms four surfaces around one first recess.
  • a conductor film or the like is formed in the first recess, it is not necessary to pattern these films in the first recess region.
  • the 30 ⁇ m mentioned above can be further reduced by further improvement of the thin film forming technology, and thus will become more advantageous in the future. Therefore, it is advantageous about 10 times compared with the conventional planar diaphragm, and if the area is the same, it means that the present invention is about 10 times more sensitive than the conventional method.
  • an adhesion layer 212 and a conductor film 214 are laminated on the first surface (front surface) of the piezoelectric substrate 211 as shown in FIG.
  • the conductor film 214 is a conductive thin film, such as platinum (Pt), copper (Cu), gold (Au), aluminum (Al), or an alloy thereof.
  • the adhesion layer 212 is also a conductor film, but is a conductor film that improves the adhesion between the conductor film 214 and the piezoelectric substrate 211.
  • the adhesion layer 212 is also a conductor film, such as titanium (Ti), titanium nitride (TiN), tantalum (Ta), or tantalum nitride (TaN).
  • the adhesion layer 212 does not need to be laminated when it is not necessary.
  • the adhesion layer 212 has a thickness of 0 to 100 nm
  • the conductor film 214 has a thickness of 10 to 2000 nm.
  • the conductor film 214 (including the adhesion layer 212) does not need to be etched and patterned in the first recess.
  • unnecessary conductive layers 214 (including the adhesion layer 212) other than the regions of the first recesses must be removed. Therefore, a photolithographic method and etching of the conductive layer 214 (including the adhesion layer 212) are performed for pattern formation therefor. At this time, the regions of the first recesses 226 and 227 are covered with a photoresist.
  • an insulating film 216 is stacked.
  • This insulating film 216 protects the first recess and the conductor film 214, and is a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or the like, and is laminated by a CVD method or a PVD method.
  • a support substrate (first thin plate) 276 is attached to the first surface (front surface) of the piezoelectric substrate 211.
  • the support substrate 276 protects elements such as the first recess formed on the first surface (front surface) of the piezoelectric substrate 211 such as the first recess, and the strength of the piezoelectric substrate 211 is reduced when the second recess is formed.
  • the purpose is to prevent the piezoelectric substrate 211 from being damaged, and to prevent the piezoelectric substrate from being deformed and deformed during the process. Therefore, it is not necessary when no problem occurs. For example, if the proportion of the recesses in the piezoelectric substrate 211 is small, the substrate is less distorted.
  • the support substrate may be a glass substrate, a quartz substrate, a ceramic substrate, an insulating substrate such as a plastic substrate, a conductive substrate such as a metal plate, or a semiconductor substrate. What is necessary is just to select suitably according to intensity
  • a method of attaching the support substrate 276 to the piezoelectric substrate 211 there are a method of bonding at room temperature, a method of vacuum bonding, a method of bonding using high temperature bonding, diffusion bonding, and an adhesive.
  • the adhesive in order to prevent the adhesive from entering the first recess as much as possible, the adhesive is coated only on a necessary portion of the support substrate 276 (a portion where the piezoelectric substrate 211 and the support substrate adhere). Then, the support substrate 276 is attached to the piezoelectric substrate 211 by aligning the pattern. For example, an adhesive is coated on a necessary portion of the support substrate 276 using a mask (screen printing is also possible), and then the support substrate 276 is attached to the piezoelectric substrate 211. When the adhesive is used, a predetermined heat treatment or the like is performed to securely fix the support substrate 276 to the piezoelectric substrate 211.
  • an adhesive and a bonding condition are selected so that the adhesive force does not decrease in the subsequent process.
  • the support substrate 276 is used as the first thin plate, it is not necessary to remove the support substrate 276 from the piezoelectric substrate 211 after being attached, but when the support substrate 276 is not used as the first thin plate, the piezoelectric substrate 211 is not piezoelectric. Since it is necessary to remove the substrate 211 after the back surface processing is completed, an adhesive that can be removed is selected. For example, by using an adhesive that does not soften at the temperature (T2) of the second recess formation process with a heat softening adhesive, but softens at a temperature higher than that, a temperature higher than T2 after the end of the second recess process.
  • the support substrate 276 is removed from the piezoelectric substrate 211.
  • the adhesive may be a thermosoftening adhesive that does not soften at T2, or may be a thermosetting adhesive.
  • the pressure confined in the first recess when the support substrate 276 is attached to the piezoelectric substrate 211 (this is Then, the pressure in the first recess is determined.
  • P0 is approximately 0 atm
  • the support substrate 276 is attached to the piezoelectric substrate 211 under the pressure of P0. In order to set P0 to 1 atm, the support substrate 276 may be attached to the piezoelectric substrate 211 under atmospheric pressure.
  • a second recess is formed on the back surface of the piezoelectric substrate 211.
  • An insulating film 277 is formed on the second surface (back surface) of the piezoelectric substrate 211.
  • the purpose and formation method of the insulating film 277 are the same as those of the insulating film 271.
  • a photoresist pattern 278 for forming a second recess is formed on the insulating film 277 by using a photolithography method.
  • the photoresist opening 279 is an opening for forming the second recess.
  • the photoresist pattern 278 and the photoresist opening 279 are formed in alignment with the pattern of the first surface (front surface) of the piezoelectric substrate 211, particularly the first recesses 226 and 227.
  • the piezoelectric substrate 211 is transparent or easily transmits a certain amount of light (specific), if light having a wavelength that can be transmitted through the piezoelectric substrate 211 is irradiated from the front surface to the back surface, the light is received. Therefore, since the photoresist patterns 278 and 279 on the back surface can be aligned (aligned) directly with the pattern on the first surface (front surface) of the piezoelectric substrate 211, alignment with high accuracy can be performed. For example, the alignment accuracy can be 0.3 ⁇ m to 0.1 ⁇ m or less. When the piezoelectric substrate is PZT, the transmittance of light is 50% or more in the wavelength range of 500 nm to 800 nm (visible light range).
  • the photoresist 278 is patterned slightly larger than the first recess. That is, the thickness of the side wall of the piezoelectric substrate 211 is larger on one side than the width Wc1 of the first recess.
  • the insulating film 277 exposed at the opening 279 of the photoresist pattern is removed by etching.
  • the etching of the insulating film 277 is similar to the etching of the insulating film 271.
  • the piezoelectric substrate 211 exposed through the opening 279 of the photoresist pattern is removed by etching. Since the etching pattern shape needs to be formed as faithfully as possible to the photoresist pattern 278, a vertical pattern is desirable. Further, it is desirable that the thickness of the piezoelectric side wall sandwiched between the first recess and the second recess is as equal as possible. That is, in FIG.
  • This etching method may be the same as the method for forming the first recess.
  • the thickness of the bottom 240 of the second recess is preferably 5% to 15% of the piezoelectric substrate 211.
  • the thickness of the piezoelectric substrate is 500 ⁇ m, it is desirable to leave 25 ⁇ m to 75 ⁇ m. If it is 5% or less, there may be a portion where the piezoelectric substrate 211 disappears in the substrate (wafer) due to etching variation or the like, and if it is thicker than 15%, the piezoelectric substrate is not used effectively. .
  • the piezoelectric body is present at the bottom 240 of the second concave portion even if it is extremely thin. That is, since the piezoelectric substrate bottom 240 of the second recess is already attached to the support substrate 276, there is no particular problem because it is already strongly reinforced in terms of strength. However, in the process from removing the support substrate 276 to attaching the first thin plate, it is necessary to pay close attention so that this portion is not damaged.
  • the side walls 231, 232, 233, 234 of the piezoelectric substrate are formed between the first recesses 226, 227, and these side walls serve as diaphragms. Deformation is caused by the difference between the internal pressure and the internal pressure of the second recess, and correspondingly, this portion is polarized by the piezoelectric effect, and opposite charges are generated on both side surfaces of the piezoelectric substrate 211.
  • the photoresist 278 is removed.
  • This removal method is the same as the removal of the photoresist 272. Since the element (the first concave portion or the conductor film) on the first surface side of the piezoelectric substrate 211 is protected by the support substrate 276, no damage or the like enters during the removal. Since the thickness of the bottoms 235 and 236 of the first recess is about 10% of the thickness of the piezoelectric substrate 211, there is no problem. Further, since the thick piezoelectric substrate is present and supported on the depth side, it is not deformed by this photo-registry move or subsequent processes. If there is no problem, the insulating film 277 may be left.
  • an aqueous solution for etching the insulating film for example, a hydrofluoric acid-based etching solution if the insulating film is a silicon oxide film
  • a dry etching method may be used.
  • the piezoelectric substrate 211 is exposed, it is necessary to set a material and conditions that do not etch the piezoelectric substrate 211 as much as possible.
  • an adhesion layer 213, a conductor film 215, and an insulating film 217 are stacked on the second surface side.
  • the adhesion layer 213 may have the same purpose and the same material and conditions as the adhesion layer 212.
  • the conductor film 215 is similar to the conductor film 214, and the insulating film 217 is similar to the insulating film 216. Since the first concave portion and the second concave portion are formed, the piezoelectric substrate 211 appears to be considerably etched and weakened in FIG. 14E, but in reality, it is perpendicular to the paper surface of FIG. In addition, since there are many regions where a thick substrate without a concave portion remains, the strength of the substrate 211 during the process is sufficient. Furthermore, since the support substrate 276 covers and supports the entire piezoelectric substrate 211, the strength of the piezoelectric substrate 211 is not a problem.
  • the adhesion layer 213 and the conductor layer 215 can be stacked in the same apparatus, they can be stacked continuously.
  • argon sputter etching is first performed to lightly remove the insulating film on the surface of the piezoelectric substrate (also referred to as reverse sputtering), then titanium is sputtered, and platinum is continuously added. Etc. can be laminated.
  • the conductor film 215 does not need to be etched or the like in the region having the second recess, so that the piezoelectric element of the present invention can be manufactured if these films can be laminated inside the second recess. .
  • the second recess region may be covered with a photoresist or the like so as not to be etched. For example, if a portion other than the second recessed region is exposed and patterned using a positive resist, a fine pattern can be formed. If the second recessed region is not exposed, the resist is not dissolved by development. It can be left in the recessed area.
  • a second thin plate 219 is attached to the second surface (back surface) of the piezoelectric substrate 211.
  • the means and method for attaching are the same as those for attaching the support substrate 276.
  • the thin plate 219 is for protecting the piezoelectric element of the present invention (particularly, the second concave portion or the wiring facing the second surface side) and may be considered as a kind of package and can be used as it is. .
  • the thin plate 219 is, for example, an insulating substrate such as a glass substrate, a quartz substrate, a ceramic substrate, or a plastic substrate. Alternatively, a conductive substrate such as metal may be used.
  • the thickness of the thin plate 219 is 20 ⁇ m to 2000 ⁇ m (may be thicker), and may be appropriately selected depending on the use environment, thickness restrictions (in the case of a thin package, the thickness is naturally reduced), strength, and the like. In order to confine the pressure of the second recess, the pressure during the process for attaching the second thin plate 219 may be adjusted to the pressure and completely sealed under the pressure.
  • a gas adsorbent that lowers the internal pressure by adsorbing outgas generated during the process in the second recess may be placed in the second recess.
  • the gas adsorbent for example, if a zirconia-based one is inserted, at least a part or all of moisture, oxygen, hydrogen, carbon dioxide, nitrogen and the like can be adsorbed.
  • the support substrate 276, the second thin plate 219, and the first thin plate are thinned, they may be thinned by etching or polishing after being attached. If the CMP method (chemical polishing method) is used, the support substrate and the thin plate can be thinned with high accuracy. It can be as thin as 10 ⁇ m to 200 ⁇ m. As described above, a thin thin plate or a support substrate attached to another substrate may be attached to the front or back surface of the piezoelectric substrate, and then the other substrate may be removed.
  • CMP method chemical polishing method
  • pressure introduction holes, lead electrodes and wirings are formed.
  • pressure introducing holes 237 and 238 are formed in the support substrate 276 (or the first thin plate 218) attached to the first surface side of the piezoelectric substrate 211.
  • a portion other than the place where the pressure introducing holes 237 and 238 are to be formed is covered with a photoresist by using a photolithography method.
  • a photoresist a coating method or a dry film can be used.
  • patterning can be performed using an imprint method. Since the introduction hole does not need to be fine, it may be formed by wet etching.
  • the support substrate 276 is a glass substrate
  • etching is performed with a hydrofluoric acid-based wet etching solution such as BHF. Of course, it may be formed by dry etching.
  • the glass substrate is etched with a fluorine-based gas such as CFx or SFx using a dry etching apparatus.
  • the support substrate 276 in this region 281 is also etched away at the same time in order to draw electrodes / wiring from the conductor films 214 and 215 through the contact hole wiring.
  • the support substrate 276 is removed, the insulating film 216 is exposed.
  • the support substrate 276 can be removed without etching the insulating film 216 much. If the support substrate 276 is a glass substrate and a silicon nitride film in which the insulating film 216 is laminated by a plasma CVD method, and the support substrate 276 is etched with a hydrofluoric acid aqueous solution such as BHF, the underlying insulating film 216 is hardly etched.
  • the insulating film 216 is a silicon nitride film (SiNy), a silicon oxide film (SiOx), or a silicon oxynitride film (SiOxNy), the insulating film 216 is made of a fluorine-based gas such as CF4, C2F6, or C4F8 using a dry etching apparatus. Is etched to expose the conductor film 214 in the contact hole 254.
  • the conductor film 255 may be laminated only on the contact hole 254 by using a selective CVD method or a plating method.
  • a tungsten (W) film can be selectively grown only in the contact hole 254 (only the portion where the conductor film 214 is exposed) by selective CVD using WF6 gas.
  • a copper (Cu) film can be laminated on the conductor film 216 by a plating method.
  • the conductor film 255 can be laminated also on the contact hole 254 by laminating the conductor film on the entire first surface of the piezoelectric substrate 211.
  • the electrode / wiring 256 can also be used as a conductor film, and the electrode / wiring 256 is formed by photolithography and etching of the conductor film after the conductor film is laminated. At this time, since the conductor film 255 formed in the contact hole is always covered with the electrode / wiring, the contact wiring 255 is also formed at the same time.
  • the conductor film formed here is, for example, a metal film such as aluminum, copper film, Ti, Cr, W, Mo, or a gold film, or various silicide films, and has adhesiveness to the conductor film 214 and the insulating film 216. In order to improve and improve the contact property with the conductor film 214, the aluminum is formed after the barrier metal is formed.
  • barrier metal examples include titanium, titanium nitride (TiNx), chromium (Cr), tantalum (Ta), and tantalum nitride (TaNx).
  • the thickness of the barrier metal is, for example, 10 nm to 100 nm, and the thickness of the conductor film 256 is, for example, 500 nm to 2000 nm.
  • Conductor films such as barrier metal and aluminum can be continuously formed by sputtering, vapor deposition, or CVD. If the first thin plate 218 (or support substrate 276) in the region 281 where the lead electrode (including the contact hole) is to be formed is removed in advance and then attached to the piezoelectric substrate 211, the thin plate 218 (or support substrate 276). ) Removal is not necessary.
  • the contact hole 250 is formed through the conductor film 212, the adhesion layer 212, the piezoelectric substrate 211, and the adhesion layer 213 as compared with the contact hole 254. That is, all these films are etched in order.
  • a resist window is opened in the contact hole 250 by using a photolithography method.
  • the insulating film 216, the conductor film 214, the adhesion layer 212, the piezoelectric substrate 211, and the adhesion layer 213 are etched from this window.
  • the adhesion layer 213 may be left because it is a conductor film.
  • etching is performed sequentially while changing the etching gas and etching conditions for each film quality to be etched by a dry etching apparatus. Is desirable. If it is difficult to carry out with one dry etching device. Etching may be performed by changing the apparatus for each film quality.
  • the resist is removed.
  • the insulating film 251 is formed on the side wall of the contact hole when the insulating film 251 is laminated in order to cover this portion with the insulating film. .
  • the insulating film 251 is, for example, a silicon oxide film, a silicon oxynitride film, or a silicon nitride film. Since the insulating film 251 is also laminated on the conductor film 215 at the bottom of the contact hole, the entire surface of the insulating film 251 (anisotropic etching) is performed from the first surface side of the piezoelectric substrate 211. By this anisotropic etching, the insulating film 251 at the bottom of the contact hole 250 is completely etched and the conductor film 215 is exposed, but the side wall insulating film 251 of the contact hole 250 is considerably thick in the depth direction. The insulating film 251 on the side wall of the contact hole 250 is hardly etched.
  • the conductor films 252 and 253 are laminated, and the electrode / wiring 253 is formed by using a photolithography method and a conductor film etching method.
  • the conductor 252 may be formed by a selective CVD method or a plating method.
  • the formation method, the formation means, and the lamination of the barrier metal and the like are the same as in the case of forming the electrode / wiring 256.
  • the contact hole 250 is deeper than the contact hole 254, it is desirable that the selective CVD method or the plating method be performed under conditions that allow the contact hole 250 to be covered.
  • the conductor 252 may also be used as the electrode / wiring conductor film 253, but it is important that the conductor 252 is stacked on the contact hole 250 under conditions of good coverage.
  • the lead electrodes / wirings 256 and 253 from the conductive films 214 and 215 can be formed on the first surface (front surface) of the piezoelectric substrate 211 as shown in FIG.
  • a method for forming electrodes on the back surface side (second surface side) of the substrate 211 will be described. Although this method and means are the same as those on the first surface side, a method of taking out electrodes / wirings on the second thin plate 219 will be described.
  • a photoresist window for forming the contact hole 257 is opened in the second thin plate 219 using a photolithography method.
  • the second thin plate 219 is etched from the place where the window is opened.
  • the second thin plate is a glass substrate, for example, if it is wet etching, the second thin plate is removed by etching with a hydrofluoric acid-based etchant such as BHF. In the case of dry etching, the second thin plate is removed by etching using CF4 or CHF3 fluorine gas. Thereafter, the insulating film 217 is etched to expose the conductor film 215. Thereafter, the resist or the like is removed, the barrier metal and the conductor film are laminated, and the in-contact conductor film 258 and the conductor / wiring 259 are formed by photolithography and etching.
  • the conductor film 258 may be formed by selective CVD or plating.
  • a method of extracting the electrode / wiring 263 from the conductor film 214 in addition to the case of forming the electrode / wiring 253, a method of first removing the second thin plate 219 by etching is added. After the contact hole 260 is formed, a sidewall insulating film 261 is formed to cover the conductor film 215 and the adhesion layer 213. Thereafter, a contact conductor film 262 and electrodes / wirings 263 are formed.
  • the extraction electrodes from the conductor films 214 and 215 are formed on both the first surface side and the second surface side, but only one of them is sufficient.
  • the deep contact holes 250 and 260 are not formed by pulling out the lead electrode of the conductor film 214 from the first surface side and the lead electrode of the conductor film 214 from the second surface side, so that the process is simple. Moreover, reliability can be improved. Furthermore, as can be seen from the above, since the aspect ratio increases when a contact hole is also formed in the piezoelectric substrate 211 and the thin plate 218 (219), the lead electrode from the conductor film 214 is more preferably provided on the first surface side. It is preferable that the lead electrode formed on the insulating film 216 is formed on the insulating film 217 from the second surface side (in the above description, a contact hole is also formed in the second thin plate. The second thin plate 219 is removed in advance).
  • the second thin plate 219 is also formed with a pressure transmission hole (for example, 239) to the second recesses 228, 229, 230, and the like.
  • the method for forming the pressure transmission hole is the same as that for forming the first thin plate 218 and the support substrate 276.
  • the pressure transmission hole can be formed together or separately. May be.
  • the second thin plate 219 in the region where the contact holes 257 and 260 are to be formed may be attached to the second surface (back surface) of the piezoelectric substrate 211. Since the aspect ratio of the contact holes 257 and 260 is reduced, it is easy to form a conductor film in the contact holes.
  • a second thin plate 219 in which a pressure transmission hole is previously prepared may be attached. Furthermore, if the thin plate or the support substrate is thinned by a polishing method or etching before the contact hole is formed in the pressure transmission hole, the thin plate, or the support substrate, the pressure transmission hole or the contact hole can be easily formed. Further, since the aspect ratio of the contact hole is reduced, the coverage (step coverage) of the conductor film / wiring is also improved. However, when the thin plate or the support substrate is used as a protective material for the package body, it is necessary to determine the thickness thereof in consideration of reliability and strength.
  • a piezoelectric element having a diaphragm on the side wall of the piezoelectric substrate sandwiched between the first recess and the second recess formed in the piezoelectric substrate can be formed.
  • Piezoelectric elements can be remarkably improved in sensitivity by connecting as many diaphragms as necessary, and even smaller pressure differences can be detected. Therefore, a very good piezoelectric element (pressure sensor) can be realized.
  • the pressure sensor can be a very thin pressure sensor having a package thickness of about 500 ⁇ m (0.5 mm).
  • the absolute pressure can be detected, By simply placing the pressure sensor package of the invention, the pressure of the environment can be detected.
  • the substrate side wall diaphragm
  • the gas or liquid contained in the recess can be arbitrarily discharged, and the gas or liquid from the outside is recessed.
  • the electrodes of the recesses are arranged on the matrix, the corresponding recesses can be moved freely. If the pressure transmission holes are connected, gas or liquid can be transferred from one recess to another.
  • the amount of deformation of the substrate side wall can be controlled by the magnitude of the voltage, the volume in the recess can be freely controlled, and the amount of gas or liquid entering the recess through the pressure transmission hole can also be controlled. These can also be applied to inkjet devices. Furthermore, if an on-off valve is attached to the pressure transmission hole, a pump or gas and liquid transport system capable of complicated movement can be constructed by arbitrarily controlling the on-off valve control and side wall control. Furthermore, according to the present invention, power generation is also possible by changing the pressures of P1 and P2 to deform and vibrate the piezoelectric substrate. For example, in the case of a pulsating liquid, the pressure of the second recess is fixed and the liquid enters and exits the first recess.
  • the first recess When the liquid enters the first recess, the first recess expands, and when the liquid comes out of the first recess, the first recess becomes depressed. As a result, power can be generated by extracting charges from the polarization generated in the piezoelectric film or the piezoelectric substrate. (The structure shown in FIG. 13 is also the same.) Since the device of the present invention is minute and can be inserted into the human body, when an organ operation chip such as a pacemaker is implanted in the human body, Electricity can be generated using fluctuations in flow and breath. Furthermore, it is possible to generate electricity using an air flow generated by vibrations walking into the shoe sole. Moreover, since this invention can also enlarge, it can be used similarly for floor power generation. Furthermore, it can be applied to sea waves to generate electricity.
  • FIG. 15 is a diagram showing a method of manufacturing the piezoelectric device of the present invention using the imprint method.
  • the piezoelectric polymer 4011 is applied or dropped onto the substrate 4009 or a sheet (film) -like piezoelectric polymer 4011 is attached.
  • the piezoelectric polymer 4011 is thermoplastic (thermosoftening) and has a glass transition point of Tg4011. The temperature of the piezoelectric polymer 4011 is raised to Tg4011 or higher to soften or make the piezoelectric polymer liquid, and then the mold 4008 is pressed.
  • the mold 4008 may be pressed in a liquid or gel state, and then the temperature of the piezoelectric polymer 4011 may be raised to Tg 4011 or higher. (FIG. 15A) Thereafter, the temperature is lowered to Tg4011 or lower to cure the piezoelectric polymer 4011, and the mold 4011 is released.
  • the convex portion 4007 of the mold 4008 forms a concave portion 4015 of the piezoelectric polymer 4011, and the concave portion 4005 of the mold 4008 forms a convex portion 4004 of the piezoelectric polymer 4011.
  • a conductive polymer 4013 is applied or dropped onto a piezoelectric polymer 4011 substrate having a convex portion 4004 or a sheet (film) -like piezoelectric polymer 4011 is attached.
  • the conductive polymer 4013 is thermosetting, and the curing temperature Tg4013 is selected to be lower than Tg4011.
  • Tg4013 ⁇ Tg4011 The liquid or gel conductive polymer 4013 also enters the recess 4015 of the piezoelectric polymer 4011 substrate.
  • a mold 4012 having a convex pattern 4012-c is pressed against the liquid or gel-like conductive polymer 4013.
  • Tg is preferably Tg4013 ⁇ 5 ° C. ⁇ T10 ⁇ T10 + 10 ° C, and more preferably Tg4013-1 ° C ⁇ T10 ⁇ T10 + 5 ° C.
  • Tg is preferably Tg4013-1 ° C ⁇ T10 ⁇ T10 + 5 ° C.
  • a wiring pattern of the conductive polymer film 4013 is formed by using a photolithography method, an imprint method, or an etching method.
  • the conductive polymer film 4013 does not need to be provided with a wiring pattern, it may be omitted.
  • the conductive polymer film 4013 does not have to be patterned in the concave portion of the piezoelectric polymer substrate 4011.
  • the wiring pattern may be formed when forming the wiring pattern on the piezoelectric polymer substrate 4011, and the process is simple. is there.
  • an insulating polymer 4017 is applied or dropped on the conductive polymer film 4013 of the piezoelectric polymer substrate 4011 or a sheet (film) -like piezoelectric polymer 4011 is attached.
  • the insulating polymer 4017 is thermosetting, and a curing temperature Tg4017 is selected that is lower than Tg4011.
  • the liquid or gel-like insulating polymer 4017 also enters the concave portion of the piezoelectric polymer substrate 4011. ⁇ FIG. 15 (d) ⁇ A mold 4016 having a protruding pattern 4016-c is pressed against a liquid or gel insulating polymer 4017.
  • the protruding pattern 4016-c of the mold 4016 enters the recess 4015 of the piezoelectric polymer substrate 4011.
  • Tg4017 T11
  • T11 is preferably Tg4017 ⁇ 5 ° C.
  • T11 ⁇ T11 + 10 ° C Tg4017-1 ° C ⁇ T11 ⁇ T11 + 5 ° C.
  • the substrate 4009 on the side of the piezoelectric polymer 4011 is not shown, but the substrate 4009 is also a support substrate for the piezoelectric polymer 4011 substrate. It is better to process by adhering to.
  • the second thin plate 4023 is attached to the side having the concavo-convex pattern on the piezoelectric polymer 4011 side. You may make it adhere via the adhesive 4024 between the convex part of the uneven
  • the adhesive 4024 is a thermosetting resin, and when the curing temperature is Tg4024, the Tg4024 is selected to be lower than Tg4011.
  • the substrate 4009 is separated from the piezoelectric polymer 4011. For example, since the piezoelectric polymer 4011 is softened by setting the temperature higher than Tg 4011, the substrate 4009 can be separated from the piezoelectric polymer 4011.
  • the piezoelectric polymer 4011 is softened.
  • the mold 4018 is pressed into the piezoelectric polymer 4011, and the convex portion of the mold 4018 is put into the portion 4019 to be the concave region of the piezoelectric polymer 4011.
  • the piezoelectric polymer 4011 is aligned and pressed as precisely as possible so that the thickness of the piezoelectric polymer 4011 becomes a predetermined thickness.
  • the concave portion 4015 may be deformed by mold pressing, it is necessary to control with a pressure that does not deform or there is a concave portion 4015.
  • a pressure transmission hole is formed in the second thin plate 4023 in the region, and a pressure (for example, air pressure, nitrogen pressure, or liquid pressure) that can resist the pressing of the mold is applied to the recess 4015 from the pressure transmission hole, the recess 4015 Can be prevented from being deformed.
  • the recess 4015 is filled with a thermoplastic polymer and cured, and after this (Tg is lower than Tg4011), the pressure plate is opened from the pressure transmission hole formed in the second thin plate 4023. There is also a way to let it flow.
  • the conductive film 4021 and the insulating film 4025 are formed, then the other substrate is removed, and the polymer in the recess 4015 is taken out.
  • a conductive polymer 4021 is applied, dropped, or a sheet (film) -like piezoelectric polymer 4011 is attached.
  • the concave portion 4019 of the piezoelectric polymer 4011 is filled (or sufficiently filled).
  • the conductive polymer 4021 is a thermosetting resin or a photocurable resin.
  • a resin having a curing temperature Tg4021 lower than Tg4011 is selected.
  • the mold 4022 is pressed against the liquid or gel-like conductive polymer 4021. The convex part of the mold 4022 enters the concave part 4019 of the piezoelectric polymer 4011.
  • the mold 4022 is pressed against the conductive polymer 4021 and then irradiated with curing light. Therefore, it is desirable that the mold 4022 or the second thin plate 4023 be formed of a material that transmits this light, for example, glass or quartz.
  • the entire temperature is maintained between Tg4021 and Tg4011, the conductive polymer 4021 is cured, and the mold 4022 is released, and then the conductive polymer 4011 is conductive.
  • a thin film of the conductive polymer 4021 is formed.
  • necessary wiring patterning is performed on the conductive polymer 4021.
  • the conductive polymer 4021 in the recess 4019 does not need to be patterned, it can be easily processed by a normal photolithography + etching process. Thereafter, the insulating polymer 4025 is applied, dropped, or a sheet (film) -like piezoelectric polymer 4011 is attached. In particular, the concave portion 4019 of the piezoelectric polymer 4011 is filled (or sufficiently filled).
  • This insulating polymer 4025 is a thermosetting resin or a photocurable resin. When the insulating polymer 4025 is a thermosetting resin, a resin having a curing temperature Tg4025 lower than Tg4011 is selected. ⁇ FIG.
  • the mold 4026 is pressed against the liquid or gel insulating polymer 4025.
  • the convex part of the mold enters the concave part 4019 of the piezoelectric polymer 4011.
  • the depression 4015 may be deformed by pressing, but it is necessary to control with a pressure that does not deform.
  • ⁇ FIG. 15 (p) When the insulating polymer 4025 is cured and the mold 4026 is released, a thin film of the insulating polymer 4025 is formed on the conductive polymer 4021 on the piezoelectric polymer 4011.
  • the insulating polymer 4025 serves as a protective film for the conductive polymer.
  • the first thin plate 4027 is attached to the insulating polymer 4025 through an adhesive or the like.
  • FIG. 15 (p) The first thin plate in the area for the pressure transmission hole and the extraction electrode is removed in the concave portion 4019. Thereafter, lead electrode wirings and the like are formed, and a piezoelectric element device is manufactured. Note that the extraction electrode and the like (and the contact hole therefor) may be formed before the first thin plate 4027 is attached. (The same applies to the second thin plate 4023.) Further, a thin plate from which the pressure transmission hole and the extraction electrode region have been removed in advance may be attached.
  • a highly accurate piezoelectric element device can be manufactured by a very simple process and a low temperature process.
  • the piezoelectric element device shown in FIG. 15 is deformed by the pressure difference between the concave portion 4019 and the concave portion 4021, and the piezoelectric body 4011 on the side wall sandwiched between these concave portions is deformed, and the charges generated on the piezoelectric body surface on the side wall by these deformations are It is possible to detect the pressure difference between the recess 4019 and the recess 4021 based on the potential difference between the conductor wires 4017 and 4025 which are in close contact with each other.
  • a liquid container such as ink
  • a voltage is applied to these conductor wirings to deform the piezoelectric film (diaphragm film) on the side wall, so that the ink or the like is transferred from the pressure transmission hole.
  • the gas in the recess can be discharged precisely, it can be used as a highly accurate pump device.
  • the above process was described centering on the imprint method, other methods may be combined.
  • 4011 has been described as a piezoelectric polymer, it may be a piezoelectric ceramic.
  • this piezoelectric ceramic for example, PZT or the like ⁇ Pb (Zr, Ti) O 3, Pb (Zn 1/3 Nb 2/3 ) O 3 (97 wt%)-Bi 2 O 3 (2 wt%)-ZnO ( 1 wt.
  • the mold 4008 is released after these piezoelectric ceramics are cured.
  • the mold 4018 cannot be used, as shown in FIGS. 15 (i) and 15 (j), since it does not melt or soften unless the temperature is considerably increased. Therefore, in this process, the resist 40 is patterned by photolithography, imprinting, or the like, and the recess 4019 is formed by etching.
  • the conductor films 4013 and 4021 and the insulating films 4017 and 4025 may be formed by a CVD method or a PVD method.
  • the CVD method and the PVD method are easier for these films. Since the wiring in the recess shown in FIG. 15 may be connected as it is, it is not necessary to perform tricky wiring patterning in the recess or in the recess tube.
  • various metal films and silicide films formed by CVD or PVD methods have higher conductivity than conductive polymers, so that generated charges can be transported smoothly (with less resistance).
  • FIG. 15 shows the structure and manufacturing method when the piezoelectric substrate 4011 is used as the substrate side wall, but the piezoelectric device shown in FIG.
  • the piezoelectric substrate 4011 shown in FIG. 15 may be considered as an ordinary insulator such as polymer or rubber.
  • Subsequent steps for forming the first recess and the second recess can be performed by a similar process. The difference is that a conductor film to be a lower electrode is formed in each of the first recess and the second recess, a piezoelectric film is formed thereon, and a conductor film to be an upper electrode is further formed. . Thereafter, the process can proceed in the same manner as described above.
  • the piezoelectric substrate 4011 may be considered as ceramic or glass.
  • the mold is imprinted at a temperature higher than the Tg of the glass, and then cured at a temperature lower than the Tg.
  • the piezoelectric substrate 4011 may be considered as a conductor such as metal.
  • the temperature may be lowered to the melting point (Tm) or lower to solidify the metal.
  • Tm melting point
  • an insulating film is formed, a conductor film serving as a lower electrode is laminated thereon, and necessary patterning is performed, and then a piezoelectric film is laminated.
  • a conductor film to be an upper electrode is laminated thereon and necessary patterning is performed. Further, an insulating film is laminated, a thin plate is attached, and the recess is covered.
  • FIG. 16 is a view showing an embodiment in which the side wall is formed only by the first concave portion formed on the first surface (front surface) side in the substrate.
  • the substrate 311 is a semiconductor substrate such as silicon, germanium, gallium arsenide (GaAs), gallium nitride, carbon, various compound semiconductors, or an insulating substrate such as glass, quartz, ceramic, polymer, rubber elastic body, iron, copper, aluminum, etc.
  • Metal substrates such as various metals and various alloys. The following will be described as a silicon substrate.
  • First recesses 301 and 302 are formed adjacent to each other in the silicon substrate 311.
  • FIG. 16B is a plan view (a cross-sectional view in a plane parallel to the substrate surface) of the embodiment of the present invention.
  • the adjacent first recesses are rectangular and have a rectangular parallelepiped shape when viewed three-dimensionally.
  • the side surfaces of the rectangular parallelepiped shape are adjacent to each other and the first recesses are arranged.
  • a silicon substrate side wall 323 sandwiched between the first recesses 301 and 302 becomes a diaphragm.
  • the side surfaces of the first recesses 301 and 302 shown in FIG. 16 are preferably formed to be perpendicular to or close to the substrate surface, so-called substantially perpendicular.
  • the depth of the first recess is formed so as not to reach the second surface (back surface).
  • the thickness of the silicon substrate 315 remaining at the bottom of the first recess is formed to be about 5 to 15% of the thickness of the silicon substrate.
  • the strength of the bottom portion of the first concave portion is reduced by thinning or penetrating depending on the location in the substrate.
  • 15% or more may be left, in that case, since the silicon substrate can be made thin, a thin silicon substrate can be used from the beginning.
  • the thickness of the silicon substrate side wall 323 serving as a diaphragm is 1 ⁇ m to 100 ⁇ m, and is determined by the pressure used, the accuracy of photolithography, and the manufacturing accuracy during etching.
  • the alignment of the first recess and the second recess becomes unnecessary.
  • the interaction between the first concave portion and the second concave portion and the mutual relationship become unnecessary with respect to variations in the photolithography process and the etching process.
  • the deformation of the adjacent concave portion is reversed, it is necessary to cut the wiring (preferably at the flat portion of the substrate).
  • the first conductor film 313 is disconnected between the first recess 301 and the first recess 302 at 317 and is not conductive. Since the conductor film in the recess may be connected, patterning in the recess is unnecessary. ).
  • a piezoelectric film 314 is formed in the cut portion (the piezoelectric film 314 is formed after cutting the first conductive film 313 in this portion). The cut portion is on the upper surface of the silicon substrate side wall 323.
  • the second conductor film 316 is disconnected between the first recess 301 and the first recess 302 318 and is not conductive (the conductor film in the recess may be connected, so that the patterning in the recess is performed). Is unnecessary.)
  • An insulating film 320 is formed in the cut portion (the insulating film 320 is formed after cutting the second conductor film 316 in this portion). The cut portion is on the upper surface of the silicon substrate side wall 323. Since this part is not deformed, it hardly contributes to charge generation.
  • the pressure P1 in the first recess 301 is different from the pressure P2 in the adjacent first recess 302, and the silicon substrate side wall 323 is deformed as a diaphragm by this pressure difference.
  • the piezoelectric films 314 (314-2) and 314 (314-3) attached to the silicon substrate side wall 323 are deformed.
  • the piezoelectric film 314 (314-2) attached to the silicon substrate side wall 323 is the side wall piezoelectric film on the first recess 301 side
  • the piezoelectric film 314 (314-3) attached to the silicon substrate side wall 323 is the first recess. This is a side wall piezoelectric film on the 302 side.
  • Electric charges are polarized by deformation on both surfaces of the piezoelectric films 314 (314-2) and 314 (314-3). At this time, the deformation direction on the upper side of the piezoelectric film 314 (314-2) and the deformation direction on the upper side of the piezoelectric film 314 (314-3) are different (one is swollen and the other is recessed). The charge generated on the upper surface of the body film 314 (314-2) and the charge generated on the upper surface of the piezoelectric film 314 (314-3) are reversed. Therefore, if the second conductor film 316 is connected, it is canceled out, and the second conductor film 316 needs to be cut at 318.
  • the second conductor film 316 on the first recess 301 side is denoted by 316-1, and the second conductor film 316 on the first recess 302 side is denoted by 316-2.
  • the charge generated on the lower surface of the piezoelectric film 314 (314-2) and the charge generated on the lower surface of the piezoelectric film 314 (314-3) are reversed. Therefore, if the first conductor film 313 is connected, it is canceled out, and the first conductor film 313 needs to be cut at 317.
  • the first conductor film 313 on the first recess 301 side is denoted by 313-1, and the first conductor film 313 on the first recess 302 side is denoted by 313-2.
  • a first thin plate 319 covering the first recesses 301 and 302 is attached on the first surface (front surface) of the silicon substrate 311.
  • the first thin plate 319 covers the first recesses 301 and 302 to protect the first recess.
  • the thin plate 319 covering the first recess 301 is provided with a pressure introducing hole 321 so that the pressure P1 can be introduced.
  • the thin plate 319 covering the first recess 302 is also provided with a pressure introduction hole 322 so that the pressure P2 can be introduced.
  • the first thin plate 319 is removed.
  • a contact hole 341 is formed in the piezoelectric film 314 on the first conductor film 313 (313-1) and the insulating film 320 laminated thereon,
  • a conductor film 342 is formed in the contact hole 341, and an electrode / wiring 343 is further formed on the conductor film 342.
  • the piezoelectric film 314 (314-2) is deformed on the lower surface of the piezoelectric film 314 (314-2).
  • the generated charges are drawn out to the electrode / wiring 343 through the conductor film 313-1 and further through the conductor film 342 in the contact hole 341.
  • an insulating film is formed in advance on the side wall of the contact hole 341 so that the conductor film 342 and the piezoelectric film 314 in the contact hole 341 do not contact each other.
  • the conductor film 316 (316-1) in the region where the contact hole 341 is formed is removed by etching in advance. Further, a contact hole 344 is formed in the insulating film 320 on the second conductor film 316 (316-1) in the region 338 where the thin plate 319 is not formed, and the conductor film 345 is formed in the contact hole 344. Then, an electrode / wiring 346 is formed thereon, and electric charges generated on the upper surface of the piezoelectric film 314 (314-2) due to the deformation of the piezoelectric film 314 (314-2) Further, it is drawn out to the electrode / wiring 346 through the conductor film 345 in the contact hole 344.
  • a contact hole 331 is formed in the piezoelectric film 314 on the first conductor film 313 (313-2) and the insulating film 320 laminated thereon, A conductor film 332 is formed in the contact hole 331, and an electrode / wiring 333 is formed on the conductor film 332, and is generated on the lower surface of the piezoelectric film 314 (314-3) by deformation of the piezoelectric film 314 (314-3).
  • the charged charges are extracted to the electrode / wiring 333 through the conductor film 313-2 and further through the conductor film 332 in the contact hole 331.
  • an insulating film is formed in advance on the side wall of the contact hole 331 so that the conductor film 332 and the piezoelectric film 314 in the contact hole 331 do not contact each other.
  • the piezoelectric film 314 in the region where the contact hole 331 is formed is removed by etching in advance.
  • the conductor film 316 (316-2) in the region where the contact hole 331 is to be formed is removed by etching in advance.
  • a contact hole 334 is formed in the insulating film 320 over the second conductor film 316 (316-2), and the conductor film 335 is formed in the contact hole 334.
  • the electrode / wiring 336 is further formed thereon, and the electric charge generated on the upper surface of the piezoelectric film 314 (314-3) due to the deformation of the piezoelectric film 314 (314-3) Further, it is drawn out to the electrode / wiring 336 through the conductor film 335 in the contact hole 334. In this way, charges having opposite potentials generated on the upper and lower surfaces of the piezoelectric film 314 (314-3) due to the deformation of the piezoelectric film 314 (314-3) are drawn out to the electrodes / wirings 333 and 336. If the same polarity of the extracted charges are collected, a large potential is obtained, and the pressure difference P2-P1 in the adjacent first recess can be known from the magnitude of this potential.
  • the substrate is a silicon substrate
  • an IC can be fabricated in the same silicon substrate, so that it can be integrated into one chip together with a pressure sensor and a calculation IC for performing pressure calculation.
  • a pressure sensor using a piezoelectric element can be manufactured even if the recess is formed only on the first surface of the substrate. This advantage is that there is no need to provide a second recess on the back side (the process becomes complicated), that there is no need to align the pattern between the front and back surfaces, and that alignment between adjacent recesses is necessary.
  • the distance between adjacent recesses can be narrowed, that is, the substrate side wall between adjacent recesses can be made thin, so that the substrate side wall can be deformed with a smaller pressure difference, and the sensitivity of pressure detection is improved. It is to improve.
  • FIG. 16B is a plan view (a cross-sectional view in a plane parallel to the substrate surface) of the embodiment of the present invention. If the first concave portions are arranged in parallel, the potentials from a large number of diaphragm portions can be collected. Thus, a large potential is obtained with a small area, and the sensitivity as a pressure sensor can be increased.
  • An advantage of the present invention is that it is not necessary to pattern the wiring or the like in the recessed area, so that a large number of recessed parts can be arranged (the wiring is cut at a flat portion of the first surface (front surface)).
  • the width of the first recess is Wc-3
  • the width (thickness) of the side wall is Ws
  • the length of the first recess is Lc-3
  • the depth of the first recess is Hc-3.
  • the size of the conventional planar diaphragm is set to 300 ⁇ m ⁇ 300 ⁇ m, and it is estimated whether the piezoelectric element (diaphragm) of the present invention is included in this size.
  • the diaphragm structure of the present invention has 300 ⁇ m / 35 ⁇ m ⁇ 8 pieces in a planar size of 300 ⁇ m ⁇ 300 ⁇ m. Since there are two diaphragms per piece, there are 16 diaphragms, so the sensitivity is 16 times that of the prior art, and a pressure sensor with significantly improved sensitivity can be produced.
  • FIG. 16C is a diagram schematically showing the operation of the pressure sensor using the piezoelectric element of the present invention.
  • First recesses 356 and 357 are formed on both sides across the silicon substrate side wall 323.
  • the insulating film 312 is formed on the silicon substrate side wall 323, the first conductive film 313 (313-2) is formed thereon, the piezoelectric film 314 is formed thereon, and the second film is formed thereon.
  • the conductive film 316 (316-2) and the insulating film 320 are stacked thereon.
  • the insulating film 312 is formed on the silicon substrate side wall 323, the first conductor film 313 (313-1) is formed thereon, the piezoelectric film 314 is formed thereon, and the second film is formed thereon.
  • the conductive film 316 (316-1) and the insulating film 320 are stacked thereon.
  • the upper part of the silicon substrate side wall 323 is regulated by a thin plate 351.
  • the lower part of the silicon substrate side wall 323 is regulated by a thin plate 352.
  • the thin plate 351 corresponds to the first thin plate 319 and the thin plate 352 corresponds to the silicon substrate bottom 315.
  • the pressure P1 is applied from the pressure introduction hole 354 of the thin plate 351, and the pressure P2 is introduced from the pressure introduction hole 353.
  • P2 is introduced from the pressure introduction hole 353.
  • P2 ⁇ P1 as shown in FIG. 16C, the silicon substrate side wall 323 swells toward the first recess 356, and the piezoelectric film 314 attached thereto swells toward the first recess 356.
  • electric charges generated on the upper surface of the piezoelectric film 314 (314-2) are polarized on the upper surface and the lower surface of the piezoelectric film 314 (314-2), and the piezoelectric film 314 (314-2)
  • the charge generated on the lower surface has a reverse potential.
  • the charge generated on the upper surface of the piezoelectric film 314 (314-2) is positive, the charge generated on the lower surface is negative.
  • the second conductor film 316 (316-1) is attached to the upper surface of the piezoelectric film 314 (314-2), and the first conductor film 313 ( 313-1) is attached, so that there is a gap between the electrode C1 connected to the second conductor film 316 (316-1) and the electrode C2 connected to the first conductor film 313 (313-1). There is a potential difference between the two.
  • the charge generated on the upper surface of the piezoelectric film 314 (314-3) is negative, and the charge generated on the lower surface is positive.
  • the second conductor film 316 (316-2) is attached to the upper surface of the piezoelectric film 314 (314-3), and the first surface is attached to the lower surface of the piezoelectric film 314 (314-3). Since the conductor film 313 (313-2) is attached, the electrode C4 connected to the second conductor film 316 (316-2) is connected to the first conductor film 313 (313-2). A potential difference is generated between the electrode C3 and the electrode C3.
  • FIG. 17 is a diagram showing a method of manufacturing a pressure sensor using the piezoelectric element of the present invention shown in FIG.
  • substrate is shown with sectional drawing of the thickness direction.
  • the contents described so far and the contents shown in another embodiment are duplicated, and there are portions that are not described. Needless to say, a place that can be applied without contradiction in the contents described in other embodiments can be applied even if not specifically described in the embodiment.
  • an insulating film 361 such as a silicon oxide film is formed on the first surface (front side) of a substrate 311 such as a silicon substrate.
  • a photoresist pattern 362 for forming the first recess is formed thereon using a photolithography method.
  • the opening 363 of the photoresist is a region where the first recess is formed.
  • a resist by a coating method or a sheet-like photosensitive dry film can also be used.
  • an imprint method can also be used.
  • the insulating film 361 exposed in the opening 363 is removed by etching. This etching is preferably anisotropic etching. Further, after the insulating film 361 in the opening 363 is removed, the silicon substrate is etched to form first recesses 301 and 302.
  • the substrate 311 is etched using a so-called deep etching (DRIE) method.
  • DRIE deep etching
  • deep recesses having vertical sidewalls can be formed by magnetic neutron beam discharge etching or cluster etching using ClF 3 gas.
  • the first recess is prevented from reaching (penetrating) to the second surface (back surface) of the substrate 311.
  • the depth of the first recess (Hc1) is about 95% to 80% of the substrate thickness (Hsub). If it exceeds 95%, the thickness of the substrate 315 at the bottom of the first concave portion becomes too thin due to etching variation or the like, and the strength becomes too small.
  • the depth of the first recess is determined by the characteristics of the diaphragm, it may be less than 80%. However, in the sense that the substrate 311 is used as much as possible, the depth of the first recess is 80% or more. good.
  • the pressure sensor of the present invention can occupy a very small area and can increase the sensitivity by connecting elements one by one. Therefore, the depth of the first recess is less than 80% and the conductor is not too deep. There is also a method of improving the coverage of the film or the piezoelectric film and improving the sensitivity of pressure detection side by side.
  • the thickness Hsub of the substrate 311 is 10 to 2000 ⁇ m
  • the depth Hc1 of the first recess is 1 to 1500 ⁇ m
  • the width Wc1 of the first recess is 1 to 200 ⁇ m
  • the width Ws of the substrate side wall between the first recesses serving as a diaphragm is 0.1 ⁇ m.
  • the length of the first recess (width perpendicular to the paper surface and approximately equal to the length of the substrate side wall) Ls is 1 to 1500 ⁇ m.
  • the characteristics of the substrate material and piezoelectric film material used are It is determined as appropriate according to the applied pressure. If the technical problem is cleared, a smaller lower limit value or a larger upper limit value may be used.
  • the width Ws of the substrate side wall 323 determines the characteristics of the diaphragm, it is necessary to manufacture the substrate sidewall 323 with particularly high precision.
  • a support substrate may be attached to the second surface (back surface) of the substrate 311 so as not to be deformed during the process.
  • the insulating film 312 and the first electrode to be the lower electrode are formed.
  • the first conductive film 313, the piezoelectric film 314, and the second conductive film 316 to be the upper electrode are stacked.
  • the insulating film 312 is formed for the purpose of preventing leakage between the substrate and the first conductor film 313, and is a silicon oxide film (SiOx), a silicon oxynitride film (SiOxNy), a silicon nitride film (SiNy), or the like. It is formed by the method, PVD method, thermal oxidation method.
  • the thickness is 100 nm to 2000 nm.
  • the insulating film 312 may not be formed when the substrate is an insulator such as glass, quartz, ceramic, polymer, or rubber. (When the adhesion between the first conductor film and the substrate is poor, an insulating film is formed to improve adhesion, etc.)
  • the first conductor film 313 is made of tungsten, molybdenum, aluminum, copper, Various metals such as gold, nickel, platinum, iridium oxide, iridium, and chromium, alloys thereof, various silicides, conductive polycrystalline (amorphous) silicon, conductive polymers, etc.
  • the thickness of the first conductor film is, for example, 100 nm to 2000 nm, preferably 500 nm to 1500 nm.
  • the first conductor film 313-1 on the first recess 301 side and the first conductor film 313-2 on the first recess 302 side are separated.
  • the conductive film 313 is etched by opening a window on the upper surface 317 of the substrate side wall 323 sandwiched between the first recesses 301 and 302 by photolithography.
  • the width Ws of the substrate side wall 323 is 5 ⁇ m or less, the opening of the window is also 1 to 2 ⁇ m, but this level is possible by wet etching as well as dry etching.
  • the piezoelectric film is made of, for example, lead zirconate titanate (also called zirconate / lead titanate (Pb (Zr X Ti 1-X ) O 3 0 ⁇ x ⁇ 1), so-called PZT), PLT (PbLa X Ti 1 -X O 3 ), PLZT, SrTiO 3 , BaTiO 3 , BST (Ba X Sr 1-X TiO 3 ), SBT (SrBi 2 Ta 2 O 9 ), KNN (K 0.5 Na 0.5 NbO 3 ), , KN (KNbO 3 ), NN (NaNbO 3 ), KNN-based materials such as KNN added with impurities (eg, Li, Nb, Ta, Sb, Cu, etc.), BLT (bismuth-lanthanum-tantalum), titanium Barium oxide, lead titanate, potassium niobate, lithium
  • Ceramics with a bskite structure or tungsten-bronze structure or quartz, quartz, Rochelle salt, topaz, tourmaline, berlinite (aluminum phosphate), aluminum nitride, gallium phosphate, gallium arsenide, or Piezoelectric polymer ⁇ eg, polyvinylidene fluoride ⁇ .
  • a method of laminating a piezoelectric film sputtering, vapor deposition, CVD, MOCVD (Metal Organic chemical vapor deposition (PLD), laser ablation (PLAD), coating, screen printing, sol-gel method (for example, dielectric material such as PZT is dissolved in organic solvent)
  • the applied solution is applied by spin coating to a thickness of about 50 nm per layer, and this is temporarily fired on a hot plate at about 350 ° C. This process is repeated 3 to 4 times, and then a rapid heating furnace is used.
  • the thickness of the piezoelectric film is 0.1 ⁇ m to 100 ⁇ m, and preferably 0.5 ⁇ m to 20 ⁇ m for improving the film quality and reducing the amount of warpage. It is desirable that the layers be stacked as uniformly as possible (thickness variation is small) on the substantially vertical side wall in the first recess.
  • the layers can be stacked in a state that is close to the substantially vertical side wall in the first recess.
  • a liquid polymer or gel-like substance When a liquid polymer or gel-like substance is applied, it thickens in the first recess, and therefore it can be formed in a state close to a substantially vertical side wall using an imprint method or the like.
  • the piezoelectric film 314 is not necessary except for the first concave portion, it may be removed by etching from an unnecessary portion (for example, the electrode extraction region 364 in FIG. 17C). If the piezoelectric film is laminated by screen printing or sputtering using a mask, this etching removal step becomes unnecessary.
  • etching may be performed with HF and HNO 3 based etchants. In the case of dry etching, fluorine gas or chlorine gas is preferably used.
  • the piezoelectric film 314 is an insulator, there is no need to worry about leakage, so it can be left as it is. However, it is desirable to remove the piezoelectric film 314 from the portion of the first conductor film 313 where the extraction electrode is to be formed. If the contact hole is formed while the piezoelectric film 314 is left, the depth of the contact hole is increased by the thickness of the piezoelectric film 314. After forming the piezoelectric film 314, a second conductor film 316 is formed.
  • the second conductor film 316 is made of various metals such as tungsten, molybdenum, aluminum, copper, gold, nickel, platinum, iridium oxide, iridium, and chromium, alloys thereof, various silicides, conductive polycrystalline (amorphous) silicon, although it is a conductive polymer or the like, titanium, titanium nitride, chromium, tantalum, tantalum nitride, or the like may be formed before forming these conductor films in order to improve adhesion.
  • the thickness of the second conductor film is, for example, 100 nm to 2000 nm, preferably 500 nm to 1500 nm.
  • the second conductor film 316 is stacked, the second conductor film 316-1 on the first recess 301 side and the first conductor film 316-2 on the first recess 302 side are separated.
  • the upper surface 318 of the substrate side wall 323 sandwiched between the first recesses 301 and 302 is opened by a photolithographic method, and the conductor film 313 is etched.
  • this window opening is also 1 to 2 ⁇ m wide, but this level is possible even by wet etching.
  • the insulating film 320 is a film that protects the piezoelectric element and the conductor film 316.
  • the insulating film 320 for example, a silicon oxide film (SiOx), a silicon nitride film (SiNy), and a silicon oxynitride film (SiOxNy) are stacked by a CVD method, a PVD method, a coating method, or the like.
  • the insulating film 320 may be an organic film such as polyimide.
  • a photosensitive organic film for example, photosensitive polyimide
  • a thin plate 319 that covers the first recesses 301 and 302 is attached.
  • a portion where there is no thin plate such as a pressure introducing hole 321 for applying pressure to the first concave portion 301, a pressure transmission hole 322 for applying pressure to the first concave portion 302, and contact regions 338 and 339 (or a portion without a thin plate).
  • the thin plate 319 in the good part is removed.
  • the thin plate having these portions opened is aligned and attached to the first surface of the substrate 311. If a thin plate having a separate opening is prepared using a thin plate without a pattern in another step using a photolithographic method and etching of the thin plate, the manufacturing process steps and time of the pressure sensor of the present invention are not affected.
  • the pressure introduction hole 321 is formed in the first recess 301 and the pressure introduction hole 322 is formed in both the first recess 302. However, when only one is formed, there is no pressure introduction hole.
  • the first concave portion (for example, the first concave portion 302) is always maintained at the same pressure (this is referred to as pressure P0), the pressure P1 of the other adjacent first concave portion (for example, the first concave portion 301).
  • the substrate side wall 323 is deformed by the pressure difference between P0 and P0. Since P0 is almost equal to the pressure when the thin plate 319 is attached, if the thin plate 319 is attached in a low pressure state close to vacuum, P0 becomes almost 0 atm, and if the thin plate 319 is attached at atmospheric pressure, P0 is almost 1 atm. Therefore, a pressure sensor that detects a pressure relative to a reference pressure can be manufactured.
  • a heat treatment is performed to ensure the thin plate adherence, or a heat treatment is performed in a subsequent process, and the adhesion used for the thin plate attachment.
  • An outgas such as a solvent is generated from the agent, and the pressure P0 in the airtight first recess may change. Therefore, an adhesive method that does not use an adhesive (for example, a room temperature bonding method) may be used, or an adsorbent that adsorbs outgas may be placed in the first recess.
  • electrodes / wirings are formed in regions 338 and 339 where there is no thin plate 319.
  • a contact hole 341 is formed in the insulating film 320 on the first conductive film 313 by photolithography and etching of the insulating film 320 in a region without the second conductive film 316 and the piezoelectric film 314.
  • a conductor film 342 is laminated in the contact hole 341, a conductor film 343 for electrode wiring is further laminated, and an electrode / wiring pattern 343 is formed by photolithography and etching of the conductor film 343.
  • the conductor films 342 and 343 can also be used together.
  • a contact hole 344 is formed in the insulating film 320 over the second conductor film 316 by photolithography and etching of the insulating film 320.
  • a conductor film 345 is laminated in the contact hole 344, a conductor film 346 for electrode wiring is further laminated, and an electrode / wiring pattern 346 is formed by photolithography and etching of the conductor film 346.
  • the conductor films 345 and 346 can also be used together. These processes can also be performed simultaneously.
  • a region 339 shows a state where the piezoelectric film 314 is left on the first conductor film 313.
  • the contact hole 331 to the first conductor film 313 is formed by photolithography and etching the insulating film 320 and the piezoelectric film 314.
  • a conductor film 332 is stacked in the contact hole 331, a conductor film 333 for electrode wiring is further stacked, and an electrode / wiring pattern 333 is formed by photolithography and etching of the conductor film 333.
  • the conductor films 332 and 333 can also be used together.
  • a contact hole 334 is formed in the insulating film 320 on the second conductor film 316 by photolithography and etching of the insulating film 320.
  • a conductor film 335 is laminated in the contact hole 334, a conductor film 336 for electrode wiring is further laminated, and an electrode / wiring pattern 336 is formed by photolithography and etching of the conductor film 336.
  • the conductor films 335 and 336 can also be used together. Although these processes can be performed simultaneously, it is necessary to set process conditions in consideration of etching of the piezoelectric film 314. Thus, since the process of forming the contact hole and the conductor film becomes complicated if the piezoelectric film 314 is left, the piezoelectric film 314 may be preferably removed. Of course, contact holes and electrode wiring patterns in the regions 338 and 339 can be formed in the same process.
  • the concave portion is formed only on the first surface side of the substrate, and the piezoelectric film sandwiched between the conductive film is formed on the substrate side wall between the adjacent concave portions, and deformed by the pressure difference between the adjacent concave portions.
  • the piezoelectric film is deformed together with the substrate side wall to generate electric charges on the surface of the piezoelectric film, and a potential is generated between the conductive films above and below the piezoelectric film. If the relationship between the pressure difference between the recesses and the potential between the upper and lower electrodes / wirings of the piezoelectric film is obtained in advance, the pressure difference between the recesses can be calculated from the generated potential.
  • the piezoelectric film when an electric field is applied between the upper and lower conductor films (electrodes / wirings) of the piezoelectric film, the piezoelectric film is deformed, and the substrate side wall to which the piezoelectric film is attached is similarly deformed. This change in the substrate side wall can cause a pressure difference between the adjacent recesses.
  • FIG. 18A is similar to the embodiment shown in FIGS. 16 and 17, but in this embodiment, the recess penetrates from the first surface (front surface) to the second surface (back surface).
  • the substrate 411 is attached to the support substrate 400, and the first recesses 401, 402, and 403 penetrate from the first surface to the second surface side. That is, the bottom of the first recesses 401, 402, 403 is the support substrate 400.
  • An insulating film 412, a first conductor film 413, a piezoelectric film 414, a second conductor film 416, and an insulating film 420 are stacked on the first surface side. These laminated film structures are the same as those of the embodiment shown in FIGS.
  • a thin plate 419 is attached on the insulating film 420 on the first surface side to cover and protect the first recesses 401, 402, and 403.
  • the thin plate 419 above the first recess 401 has a pressure introduction hole 425
  • the thin plate 419 above the first recess 402 has a pressure introduction hole 426
  • the thin plate 419 above the first recess 401 has a pressure introduction hole 427. ,is open.
  • the thin plates 419 in the regions 438 and 439 where the electrodes / wirings are to be formed are removed.
  • a conductor film 442 is formed in a contact hole 441 connected to the first conductor film 413 (413-1), and an electrode / wiring 443 is formed thereon.
  • a conductor film 445 is formed in the contact hole 444 connected to the second conductor film 416 (416-1), and an electrode / wiring 446 is formed thereon.
  • a conductor film 432 is formed in a contact hole 431 connected to the first conductor film 413 (413-3), and an electrode / wiring 433 is formed thereon.
  • a conductor film 435 is formed in the contact hole 434 connected to the second conductor film 416 (416-3), and an electrode / wiring 436 is formed thereon.
  • the piezoelectric bodies on both sides of the first recess 401 are 414-1 and 414-2, the piezoelectric bodies on both sides of the first recess 402 are 414-3 and 414-4, the piezoelectric bodies on both sides of the first recess 403 are 414-5, 414-6.
  • the substrate side wall 423 is deformed by the difference P1 ⁇ P2 between the pressure P1 of the first recess 401 and the pressure P2 of the first recess 402. When P2> P1, the substrate side wall 423 swells toward the first recess 401 side.
  • the piezoelectric film 414 (414-2) also swells toward the first concave portion 401, and is polarized on the front surface side and the back surface side of the piezoelectric film 414 (414-2), and reverse charges are generated respectively. Electric charges generated on the back surface side of the piezoelectric film 414 (414-2) can be drawn out to the electrode / wiring 443 through the first conductor layer 413 (413-1) and the conductor layer 442 in the contact hole. The charges generated on the surface side of the piezoelectric film 414 (414-2) can be drawn out to the electrode / wiring 446 through the second conductor layer 416 (416-1) and the contact hole conductor layer 445.
  • the piezoelectric film 414 (414-3) also swells toward the first recess 401 (depresses on the first recess 402 side), and is polarized on the front surface side and the back surface side of the piezoelectric film 414 (414-3), A reverse charge is generated in each.
  • the charge generated on the back surface side of the piezoelectric film 414 (414-3) is drawn out to the outer electrode / wiring (not shown in FIG. 18A) through the first conductor layer 413 (413-2). Can do.
  • the electric charge generated on the surface side of the piezoelectric film 414 (414-3) is drawn out to the outer electrode / wiring (not shown in FIG. 18A) through the second conductor layer 416 (416-2).
  • the piezoelectric film 414 (414-2) and the piezoelectric film 414 (414-3) are deformed to the same side, but are oppositely deformed when viewed from the first conductor film 413 and the second conductor film 416. Therefore, the first conductor layer 413 (413-1) and the second conductor layer 416 (416-2) have the same polarity, and the second conductor layer 416 (416-1) and the second conductor layer 416 (416-1) have the same polarity.
  • One conductor layer 413 (413-2) has the same polarity. Accordingly, the first conductor film 413 is cut at the upper part 417 (417-1) of the substrate side wall 423, and the second conductor film 416 is cut at the upper part 418 (418-1) of the substrate side wall 423.
  • the substrate side wall 424 swells toward the first recess 403 when P2> P3.
  • the piezoelectric film 414 (414-5) also swells toward the first recess 403, and is polarized on the front surface side and the back surface side of the piezoelectric film 414 (414-5) to generate reverse charges respectively. Electric charges generated on the back surface side of the piezoelectric film 414 (414-5) can be drawn out to the electrode / wiring 433 through the first conductor layer 413 (413-3) and the contact hole conductor layer 432.
  • Electric charges generated on the surface side of the piezoelectric film 414 (414-5) can be drawn out to the electrode / wiring 436 through the second conductor layer 416 (416-3) and the contact hole conductor layer 435.
  • the piezoelectric film 414 (414-4) also bulges toward the first recess 403 (depresses on the first recess 402 side), and is polarized on the front side and the back side of the piezoelectric film 414 (414-4), A reverse charge is generated in each.
  • the charge generated on the back surface side of the piezoelectric film 414 (414-4) is drawn out to the outer electrode / wiring (not shown in FIG. 18A) through the first conductor layer 413 (413-2). Can do.
  • the electric charge generated on the surface side of the piezoelectric film 414 (414-4) is drawn out to the outer electrode / wiring (not shown in FIG. 18A) through the second conductor layer 416 (416-2). Can do.
  • the piezoelectric film 414 (414-5) and the piezoelectric film 414 (414-4) are deformed to the same side. However, when viewed from the first conductor film 413 and the second conductor film 416, the opposite deformation occurs. Therefore, the first conductor layer 413 (413-3) and the second conductor layer 416 (416-2) have the same polarity, and the second conductor layer 416 (416-3) and the second conductor layer 416 (416-3) have the same polarity.
  • One conductor layer 413 (413-2) has the same polarity. Accordingly, the first conductor film 413 is cut at the upper portion 417 (417-2) of the substrate side wall 423, and the second conductor film 416 is cut at the upper portion 418 (418-2) of the substrate side wall 423.
  • the piezoelectric film 414 (414-3) and the piezoelectric film 414 (414-4) are deformed in opposite directions, but when viewed from the first conductor film 413 and the second conductor film 416, they are deformed in the same direction. Therefore, the conductor film facing the piezoelectric film 414 (414-3) and the conductor film facing the piezoelectric film 414 (414-4) may be connected. That is, 413 (413-2) and 416 (416-2) are continuous between the piezoelectric film 414 (414-3) and the piezoelectric film 414 (414-4). Therefore, there is no complicated process as a process because there is no need to perform a photolithographic process or etching for cutting the conductor film in the recess.
  • the conductor films 413 and 416 are etched, a photoresist is applied on these conductor films.
  • the liquid photoresist enters the recesses (4101, 402, 403) and becomes thicker in the recesses.
  • the photoresist is a film-like sheet type
  • the recess area becomes thick because it enters the recess.
  • the portion where the photoresist is opened is the upper surface of the substrate side wall or the flat portion of the first surface, and the thickness of the photoresist is not thick.
  • the photoresist is a positive resist
  • the photoresist is a positive resist
  • the portion where the conductor film is not removed is exposed, but it may be exposed with an intensity that allows light to pass through the thick resist in the recess.
  • the developer does not enter the recess during development, so that the recess region is eventually covered with the resist.
  • the pressure sensor using the piezoelectric element of the present invention can be applied even if the recess penetrates from the first surface to the second surface.
  • the pressure sensor having this recessed portion has an advantage that it is not necessary to consider end point detection when etching the recessed portion. In the method of stopping the etching of the first recess in the substrate shown in FIGS.
  • the depth of the through hole is the same as the substrate thickness.
  • the etching selectivity is 10 and the substrate thickness is 500 ⁇ m, and deep etching is performed with 10% overetching (the etching variation is usually about 5%, the 10% overetching causes Recesses penetrating in all regions can be produced.)
  • the support substrate 400 is etched only 5 ⁇ m at maximum.
  • the etching selectivity 10 can be achieved without any problem.
  • an accurate diaphragm structure can be produced by using the recessed part which penetrated.
  • the support substrate is used as it is as the second thin plate.
  • the second thin plate is used. Since the thin plate is not etched at all, a highly accurate recess can be produced. Further, as a method for improving the etching accuracy, a concave portion penetrating as it is without forming a support substrate may be formed. At this time, even if a large amount of over-etching is taken, the support substrate is not scraped because there is only a recessed portion that penetrates. What is necessary is just to attach a 2nd thin plate after forming a penetration recessed part.
  • thermosetting adhesive When using an adhesive, do not use an adhesive whose ability is deteriorated or deteriorated in the subsequent process, or an object that generates outgas. Therefore, a thermosetting adhesive is desirable.
  • thermosoftening adhesives can also be used. For example, an adhesive that softens at a temperature higher than the maximum temperature of the subsequent process temperature and adheres securely at a temperature lower than the maximum temperature is used.
  • the support substrate 400 can be removed from the substrate 411 at a temperature higher than the maximum temperature and replaced with another support substrate.
  • a conductive substrate such as copper, iron, nickel, various alloys, various silicides, and a conductive polymer can be used.
  • the method described above can also be used as a method for attaching these conductive substrates.
  • the etching selectivity with respect to the substrate 411 can be increased, so that a recessed portion penetrating the substrate 411 can be formed without almost etching the support substrate.
  • the thickness of the support substrate 400 is the process of adhering to the substrate 411, the condition that the substrate 411 penetrates but the support substrate does not penetrate when the first recess is formed, and the first recess that penetrates the substrate 411 is formed.
  • the thickness is determined so that it will not be damaged or destroyed in the subsequent process, the thickness that will not cause problems even if the finished product is handled after being singulated, and the thickness that will not deform the support substrate due to external pressure. It is done. Therefore, the thickness of the support substrate 400 is normally 100 ⁇ m to 2000 ⁇ m. When making the thickness further thinner, the entire process conditions are taken into consideration and a thickness that does not deform or damage during the process is selected. It is also necessary to select a thickness so that warpage does not increase. As in the case shown in FIG. 13A, the lead electrode from the first conductor film can be taken out from the back side.
  • the support substrate 400 may be removed in a part of the recess, a contact hole may be formed in the insulating film 412 to expose the first conductor film 413, and the electrode / wiring may be connected. If the support substrate 400 from which the contact hole is to be removed is attached to the back surface, the process of removing the support substrate 400 after the support substrate 400 is attached is not necessary, and the process becomes simple. Thus, if the lead electrode from the first conductor film is taken from the back side, the piezoelectric film 414 need not be removed by etching. When the etching of the piezoelectric film 414 is difficult or when the thickness of the piezoelectric film 414 is large, such an extraction electrode from the back surface is also advantageous.
  • FIG. 18B is a view showing a pressure sensor having a recess penetrating the piezoelectric substrate body.
  • the piezoelectric substrate 511 is formed with recesses 516 (516-1, 516-2, 516-3, 516-4, 516-5) penetrating from the first surface (front surface) to the second surface (back surface).
  • a support substrate 513 is attached to the back surface of the piezoelectric substrate 511. If the support substrate 513 is attached to the piezoelectric substrate 511 before the recess 516 is formed, the recess 516 in the support substrate 513 is also etched when the recess 516 is formed.
  • the concave portion in the support substrate 513 does not penetrate the back surface of the support substrate 513 (the surface attached to the piezoelectric substrate 511 is the front surface).
  • the support substrate 513 is attached to the piezoelectric substrate 511 after the recess 516 is formed, no recess is formed in the support substrate 513.
  • the recess 516 is formed in the substrate 511 in a substantially rectangular parallelepiped shape.
  • a piezoelectric substrate sandwiched between adjacent recesses 516 serves as a substrate sidewall, and the piezoelectric substrate sidewall is deformed by a pressure difference in the substrate 516 adjacent to the piezoelectric substrate sidewall.
  • the so-called piezoelectric substrate side wall functions as a diaphragm. This deformation polarizes charges on the surface of the piezoelectric substrate side wall.
  • the other side is deformed into a concave shape. Therefore, the charge generated on one deformation surface of the piezoelectric substrate side wall is opposite to the charge generated on the other deformation surface. become. Therefore, a potential difference is generated between these electrodes by taking out the electric charges generated on both surfaces to the external electrodes.
  • the substrate side wall 511-2 is formed by the recesses 516-1 and 516-2.
  • the substrate side wall 511-3 is formed by the recesses 516-2 and 516-3.
  • the substrate side wall 511-4 is formed by the recesses 516-3 and 516-4.
  • the substrate side wall 511-5 is formed by the recesses 516-4 and 516-5.
  • One side of the substrate 511-1 is a recess 516-1, but no recess 516 is formed on the opposite side.
  • one surface of the substrate 511-6 is a recess 516-5, but the recess 516 is not formed on the opposite side. Or since the adjacent recessed part 516 is separated considerably, it does not deform
  • a conductor film 521 is formed in the recesses 516 and on the first surface of the piezoelectric substrate 511.
  • the conductor film 521 is in direct contact with the substrate side walls 511-2 to 51-2 in the recess 516.
  • the adjacent recesses 516 have different pressures, so that the substrate side wall is deformed.
  • the substrate side wall 511-2 therebetween is deformed.
  • the pressure in the recess 516-1 is P1
  • the pressure in the recess 516-2 is P2
  • P1 ⁇ P2 the substrate side wall 511-2 is convex toward the recess 516-1 and the recess 516-2 side. Becomes concave.
  • the conductor film 521 formed by connecting recesses having different pressures in the recesses is removed between them so as not to be connected.
  • the conductor film 521 is etched away at the portion 522-2 on the upper surface of the substrate side wall 511-2.
  • the conductor film 521-1 on the recess 516-1 side is not connected to the conductor film 521-2 on the recess 516-2 side.
  • the conductor film 521 is removed by etching at a portion 522-3 on the upper surface of the substrate side wall 511-3.
  • the conductor film 521-2 on the recess 516-2 side is not connected to the conductor film 521-3 on the recess 516-3 side.
  • the conductor film 521 is removed by etching at a portion 522-4 on the upper surface of the substrate side wall 511-4.
  • the conductor film 521-3 on the recess 516-3 side is not connected to the conductor film 521-4 on the recess 516-4 side.
  • the conductor film 521 is etched away at a portion 522-5 on the upper surface of the substrate side wall 511-5.
  • the conductor film 521-4 on the recess 516-4 side is not connected to the conductor film 521-5 on the recess 516-5 side.
  • the conductor film 521 formed in these recesses is connected You may do it. Further, when the conductor film 521 is used as wiring, the conductor film 521 is also removed from unnecessary portions, for example, the flat first surface (surface) 522-1 and 522-6 of the piezoelectric substrate 511.
  • An insulating film 525 is formed over the conductor film 521.
  • This insulating film 525 protects the pressure sensor and the conductor film 521. In particular, since outside air may enter the recess 516, the conductor film 521 in the recess is prevented from being altered by moisture or corrosive gas in the outside air.
  • a thin plate 523 is attached on the insulating film 525 on the first surface (front surface) of the substrate 511.
  • the thin plate 523 is formed with pressure introducing holes 526 (526-1, 2, 3, 4, 5). Appropriate pressure is introduced from the pressure introduction hole into each recess. Further, the thin plate 523 in the region 527 (527-1, 2) for forming the extraction electrode from the conductor film 521 is also removed.
  • a patterned thin plate 523 from which portions corresponding to these regions are removed before attaching the thin plate 523 onto the insulating film 525 may be attached onto the insulating film 525.
  • Contact holes 528 (528-1, 2) are formed in the region where the thin plate 527 is not formed, a conductor film is formed in these holes, and an external connection electrode 529 (529-1, 2) is formed.
  • a pressure sensor having a recess penetrating from the first surface (front surface) to the second surface (back surface) in the piezoelectric substrate 511 can be obtained.
  • the recess 516 becomes an airtight space surrounded by the support substrate 513, the piezoelectric substrate 511, and the thin plate 523.
  • the electric charges generated on the surface of the substrate side wall 511-3 on the recess 516-2 side due to the deformation of the substrate side wall 511-3 pass through the conductor film 521-2-3 formed on the surface of the substrate side wall 511-3. Not taken out.) It is drawn out to an external electrode / wiring (not shown) through the charge conductor film 521-3-1 generated on the opposite side (the recess 516-3 side) of the substrate side wall 511-3.
  • the electric charges generated on the surface of the substrate side wall 511-4 on the concave portion 516-3 side due to the deformation of the substrate side wall 511-4 pass through the conductor film 521-3-3 formed on the surface of the substrate side wall 511-4 and are connected to external electrodes / wirings (not shown).
  • the substrate 511-6 Since the substrate 511-6 hardly deforms, no charge is generated on the surface thereof. Accordingly, since the electric charge from the substrate 511-6 hardly moves to the conductor film 521-5-3 formed on the substrate 511-6, it is used as a wiring.
  • Conductor films 521 (5211-1-2, 5212-2, 521-3-2, 521-4-2, 521-5-2) are also formed on the bottom of the recess 526. The conductor film 521 (521-1-2, 5212-2, 521-3-2, 521-4-2, 521-5-2) is connected to the conductor film in the other recess, Since the support substrate 513 is also connected, the support substrate 513 needs to be an insulator.
  • the support substrate 513 is an insulator, there is no problem because the charge generated on the substrate side wall does not move to the support substrate 513.
  • the conductive film 521 is formed on the bottom of the recess 516 by forming an insulating film on the support substrate 513 and then attaching it to the substrate 511 (or after forming the recess). Even so, the charge generated on the substrate side wall can be prevented from moving to the support substrate 513.
  • the through hole is formed in the piezoelectric substrate, but the piezoelectric element can be manufactured by the same process even when the through hole is not a recess.
  • FIG. 19 is a diagram illustrating a manufacturing method of a pressure sensor using an imprint method.
  • a polymer 615 is formed on a substrate 611 as shown in FIG. Since the substrate 611 is a substrate on which the pressure sensor is mounted, an optimum substrate is selected.
  • the substrate 611 is a silicon substrate.
  • the pressure sensor using this imprint method can be formed on the same substrate together with active elements such as ICs and passive elements such as resistors. Can be calculated with an IC or the like to calculate a pressure value or the like.
  • the substrate 611 is an insulating substrate such as a glass substrate, a quartz substrate, or a ceramic substrate. In the case of an insulating substrate, there is no need to worry about the charge generated in the piezoelectric element leaking into the substrate.
  • the substrate 611 is a conductor substrate such as a metal or an alloy. In the case of a conductive substrate, even if static electricity or the like is generated, the static electricity can be quickly discharged to the outside. Moreover, since it is a conductor with good heat in the case of a conductor substrate, particularly a substrate of metal or alloy, the generated heat can be released to the outside.
  • the substrate 611 is a semiconductor substrate such as silicon, carbon, gallium arsenide, or gallium nitride.
  • a conductor substrate or a semiconductor substrate there is a possibility that charges generated in the piezoelectric element may leak into the substrate. Therefore, after forming the insulating film 613 on the substrate 611 as shown in FIG. A polymer 615 is formed on the insulating film 613.
  • the insulating film 613 is an insulating film such as a silicon oxide film, a silicon oxynitride film, or a silicon nitride film formed by an oxidation method, a CVD method, a PVD method, or the like.
  • Polymer 615 includes fluororesin film, polyethylene film, PMMA (polymethyl methacrylate), polycarbonate, polystyrene, acrylic resin, ABS resin, vinyl chloride, liquid crystal polymer, polyvinyl alcohol (PVA), polypropylene (PP), polyethylene (PE), N-methyl-2-pyrrolidone (NMP), acrylic resin (PMMA), polydimethylsiloxane (PDMS), polyimide resin, polylactic acid, various rubbers (natural rubber and synthetic rubber), polyvinylidene fluoride, vinylidene fluoride-tri Various polymeric materials such as ferroelectric polymers such as fluoroethylene copolymers, vinylidene fluoride tetrafluoroethylene, piezoelectric polymers such as vinylidene cyanide-vinyl acetate copolymers, polar polymers such as nylon-11 It is.
  • ferroelectric polymers such as fluoroethylene copolymers, vinylidene fluoride tetrafluoroethylene
  • a solution in which these materials are dissolved with a solvent or the like is applied and dropped to form a polymer film layer, and if necessary, after pre-baking or the like, the mold is pushed into the polymer film layer. Then, if it is a photocurable resin, it is irradiated with light such as ultraviolet rays to cure the polymer. If it is a thermosetting resin, the polymer is cured by a heat treatment at a temperature higher than the curing temperature, If there is, the polymer is softened once at the softening temperature or higher, and then the polymer is cured by lowering the temperature below the softening temperature.
  • the polymer is softened at a softening temperature or higher and then the polymer is hardened after the mold is pushed in and then the softening temperature or lower. That is, as shown in FIG. 19B, a mold 617 in which a mold pattern 619 for forming a recess is formed is pressed onto a polymer 615 formed on a substrate 611.
  • the polymer 615 is a thermoplastic resin (glass transition temperature Tg) and is pushed into the polymer 615 at a temperature higher than Tg.
  • the entire mold 617 may be fully inserted into the polymer 615 and may be pushed in, or may be inserted into the polymer 615 with a slight gap as shown in FIG.
  • the volume of the polymer 615 changes after curing, and therefore the gap interval is selected in consideration of the volume change.
  • thermoplastic resins include polycarbonate (PC), acrylic (PMMA), polylactic acid (PLA), polyethylene terephthalate (PET), polystyrene (PS), liquid crystal polymer (LCP), polyvinyl chloride (PVC), and polyacetal. (PCM), polypropylene (PP), various rubbers (natural rubber and synthetic rubber), and the like, but are not limited thereto.
  • the polymer 615 may be a thermosetting resin such as a phenol resin, an epoxy resin, a melamine resin, or a polyimide. In the case of a thermoplastic resin, it can be softened any number of times. For example, even if pattern collapse occurs, it may be softened again and the molding may be pushed in.
  • FIG. 19 is a schematic view (cross-sectional view) of the cross-sectional structure of the substrate 611. When viewed in plan, the concave portions are rectangular and the long sides are parallel and arranged in a large number.
  • the concave portions are in a rectangular parallelepiped shape, and a large number of side surfaces on the long side are parallel.
  • the side walls 615-1, 615-2, and 615-3 of the polymer 615 between the adjacent recesses become a diaphragm that is deformed by a pressure difference in the recess.
  • a mold release agent may be applied to the surfaces of the molds 617 and 619 before the molds 617 and 619 are put into the polymer 615 so that the polymer 615 does not adhere to the molds 617 and 619 and pattern collapse occurs.
  • the surfaces of the molds 617 and 619 may be coated with a fluororesin or the like.
  • the thermal printing method that is, the heat treatment at a temperature higher than normal temperature is performed to soften and cure the polymer 615.
  • the UV printing method is used, the polymer 615 can be cured even at normal temperature.
  • a UV polymer 615 that cures when irradiated with ultraviolet light is used to push the molds 617 and 619 into the polymer 615 and then cure the polymer 615 through the molds 617 and 619 and / or through the substrate 611 and the insulating film 613. Irradiate light.
  • the light of this wavelength is mostly ultraviolet rays, ⁇ rays, X rays and the like. Therefore, the molds 617 and 619, the substrate 611, and the insulating film 613 are made of materials that can transmit these lights. For example, it is made of glass or quartz. After the polymer 615 is cured by ultraviolet irradiation, when the molds 617 and 619 are pulled out, the recess 621 is formed. A mold release agent may be applied to the surfaces of the molds 617 and 619 before the molds 617 and 619 are put into the polymer 615 so that the polymer 615 does not adhere to the molds 617 and 619 and pattern collapse occurs.
  • the surfaces of the molds 617 and 619 may be coated with a fluororesin or the like. Thereafter, heat treatment may be performed to further ensure the curing. Thereafter, the polymer 615B formed on the bottom may be removed.
  • anisotropic etching using oxygen plasma may be performed on the entire surface of the substrate (the entire surface from the upper surface of the polymer 615). Since the entire surface is etched, not only the polymer 615B at the bottom of the recess but also the top surface of the polymer 615 is etched, so that the thickness of the entire polymer 615 is reduced. ) Is maintained. However, over-etching is required to remove the polymer 615B at the bottom of the recess throughout the substrate.
  • the underlying insulating film 613 (the substrate 611 when there is no insulating film 613) is exposed.
  • the oxygen plasma is hardly used. It is not etched, and it is not etched much even in the silicon nitride film system.
  • the recess depth Hc1 decreases.
  • the overetching amount it is necessary to reduce the variation in the anisotropic etching amount of the polymer due to the oxygen plasma and at the same time reduce the thickness of the polymer 615B at the bottom of the recess as much as possible.
  • the variation in the depth of the mold pattern 619 is reduced, the variation in the flatness of the mold body 617 is also reduced, and the mold pressing pressure is made uniform over the entire substrate.
  • the mold pattern 619 is preferably disposed uniformly over the entire substrate.
  • the first conductor film ⁇ first electrode / wiring (lower electrode) ⁇ 623, the piezoelectric film 625, the second conductor film ⁇ second electrode / wiring (on the cured polymer 615) Upper electrode) ⁇ 627 and insulating film 629 are formed.
  • the formation method, conditions, and the like are the same as described above.
  • the first conductive film 623 should not be connected at 637 (637-1, 2, 3) on the upper surface of the substrate side wall.
  • the second conductor film 627 is not connected to the upper surface 639 (639-1, 2, 3) of the substrate side wall.
  • a thin plate 631 is attached, and a pressure introduction hole 633 is formed in each of the recesses 621 (621-1, 2, 3, 4). The same applies to the removal of the thin plate 631 in the region where the extraction electrode from the first conductor film 623 and the second conductor film 627 is to be formed. Thereafter, contact holes for forming these lead electrodes, conductor films in the contacts, and conductor films for electrodes and wirings are formed.
  • a pressure sensor was formed in which the polymer 615 was used as the substrate side wall on the substrate 611 and the piezoelectric film was formed thereon.
  • an insulating film for example, a silicon oxide film by a CVD method or a PVD method
  • the first recess has a width Wc1 of 1 ⁇ m to 500 ⁇ m, a depth Hc1 of 1 ⁇ m to 500 ⁇ m, a length Lc1 of 1 ⁇ m to 2000 ⁇ m, and a substrate sidewall thickness Ws of 0.5 ⁇ m to 100 ⁇ m.
  • the nanoimprint method is used among the imprint methods, it is possible to form a deep recess with a very fine pattern.
  • a PET sheet Thickness about 50 ⁇ m
  • silicon oxide film (1 ⁇ m thickness)
  • silicon substrate thinness 400 ⁇ m, 4 inches
  • Soften at the above temperature A mold (made of silicon) is pressed against this softened PET, and then the temperature is lowered to Tg or lower and the mold pattern is transferred into the PET.
  • a glass plate (thickness: 200 ⁇ m) with a lead electrode portion opened is attached and fixed with an adhesive (thermosetting resin), and then a lead electrode is manufactured. did. Furthermore, a pressure transmission hole was formed in the glass in the recessed area. After the mold pattern was transferred, all process temperatures were performed at a temperature equal to or lower than the Tg of PET (about 400 ° C.).
  • a piezoelectric device pressure sensor having the structure shown in FIG. It should be noted that an adhesion layer such as titanium (Ti) may be thinly laminated (about 10 nm to 100 nm) before platinum is laminated on PET.
  • the PZT film may be sputtered after sputtering platinum having a preferred orientation (111) plane orientation, in this case, PZT oriented in the preferred orientation (111) plane of platinum.
  • PZT oriented in the preferred orientation (111) plane of platinum.
  • the thickness of the polymer film is thicker than the flat surface of the first surface of the substrate 611. turn into.
  • a piezoelectric device pressure sensor
  • a conductor film or the like may be laminated on this thick polymer film. Therefore, the coverage (step coverage) at the step portion of the conductor film or the like or the step portion.
  • FIGS. 20A to 20D are diagrams showing a method of forming a piezoelectric device in a recess formed in a semiconductor substrate such as a silicon semiconductor substrate. That is, as shown in FIG.
  • a recess 614 is formed in a region 611 in the substrate where a piezoelectric device is to be formed.
  • a resist pattern is formed by using a photolithography method or an imprint method, and the concave portion 614 is formed by wet etching or dry etching.
  • a slope 616 may be formed in the recess to facilitate polymer entry into the recess 614.
  • the substrate 611 is a (100) silicon substrate
  • an inclined slope ⁇ (111) plane ⁇ can be obtained by etching with a KOH solution.
  • isotropic etching is possible with a hydrofluoric acid-based etching solution, and isotropic etching is also possible by dry etching.
  • 20E to 20G are views for explaining a method of forming such a recess in a semiconductor substrate such as silicon.
  • an insulating film 612 is formed on the first surface of the silicon substrate 611.
  • the insulating film 612 is, for example, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film, and is formed by a coating method such as a CVD method, a PVD method, or an SOG method, a thermal oxidation method, a thermal nitridation method, or the like.
  • a photosensitive film 620 is formed on the insulating film 612 by a coating method or a sheet attaching method (a sheet-like or film-like photosensitive film is attached to a silicon substrate), and an opening is formed using an exposure method. A portion 622 is formed.
  • the insulating film 612 is removed by etching using the opening 622 pattern.
  • CF-based gas for example, CF4
  • CHF-based gas for example, CHF
  • Plasma etching is performed using a gas. If wet etching is performed, wet etching is performed using a buffered hydrofluoric acid (BHF) -based etching solution or a hydrofluoric acid-based etching solution.
  • the silicon substrate exposed to the opening pattern 622 after etching the insulating film 612 is etched to form a recess 614.
  • the substrate 611 is a (100) silicon substrate
  • the inclined surface 616 with respect to the first surface which is the (100) surface is etched by etching the silicon substrate using a KOH solution, a hydrazine solution, or the like.
  • a recessed portion 614 having the shape can be formed.
  • a recess 614 having a tapered surface 616 can be formed.
  • the concave portion 614 having the inclined surface 616 with respect to the first surface which is the (100) surface can be formed using a hydrofluoric acid-based solution (for example, HF + HNO 3 or HF + HNO 3 + CH 3 COOH).
  • a hydrofluoric acid-based solution for example, HF + HNO 3 or HF + HNO 3 + CH 3 COOH.
  • the insulating film 612 is formed to improve the adhesion with the photosensitive film 620.
  • the photosensitive film 620 is formed on the silicon substrate 611. It may be formed directly.
  • a transistor or the like is formed in another region of the silicon substrate 611, and an insulating film or the like is already formed in the region 622. If there is no problem in adhesion between the insulating film and the photosensitive film 620, the insulating film or the like is used. A photosensitive film may be formed directly on the substrate, or if there is a problem in the adhesion between the insulating film or the like and the photosensitive film 620, the adhesive film is subjected to an adhesion improving process by a hydrophilic process or the like. Alternatively, the insulating film 612 may be formed after the insulating film in the region including the region 622 is removed. (FIG.
  • a polymer 615 is applied, etc., thickly laminated on the concave portion 614 and then softened, and the convex pattern 619 of the mold 617 is pressed against the polymer 614 as shown in FIG. 20 (b).
  • the mold 615 is pulled out after the polymer 615 is cured, a recess 621 is formed in the thickly laminated polymer 615 in the recess region 614 in the substrate 611. ⁇ FIG.
  • the total thickness (thickness of the substrate 611 + in the flat portion) The thickness of the polymer 618 can be reduced.
  • the imprinted polymer 618 remains on the flat portion 618 of the first surface of the substrate 611.
  • the thickness of this portion depends on the pressing force of the imprint mold 617, the strength of the substrate 611, the initial thickness of the polymer, the repulsive force of the polymer, etc. Is approximately 0.1 ⁇ m to 20 ⁇ m. In order to make this value as small as possible, it is necessary to optimize the conditions. If optimized, 0.1 ⁇ m to 2 ⁇ m can be realized.
  • the level of the conductor films 625 and 629 approaches the level of the first surface of the substrate, and a flatter pattern can be realized.
  • the covering properties of the insulating films 623 and 629 are also improved, and disconnection of the conductor film and the like is eliminated.
  • the thickness of the piezoelectric element is also reduced, it can be applied to thin devices.
  • the polymer 615 is a piezoelectric body, for example, a polymer ferroelectric such as polyvinylidene fluoride (for example, as in FIG. 19)
  • a single conductor film on the side wall (615-1, 2, 3) of the polymer 615 Should be formed. That is, after FIG. 19C, as shown in FIG. 19E, a conductor film 641 is formed, and the conductor film 641 is removed by etching on the upper surfaces of the polymer sidewalls 615-1, 2, and 3.
  • the conductor films 641 in the recesses having different pressures are not connected.
  • an insulating film 643 is formed, and a thin plate 645 is attached thereon, and the recess is hermetically closed.
  • a pressure introduction hole 647 is formed in the recess 621 (621-1, 2, 3, 4), and the thin plate 645 is not required, for example, in a region where a lead electrode is formed from the conductor film 641.
  • the thin plate 645 is removed.
  • the pressure introducing hole 647 or a thin plate 645 in which an unnecessary region is opened in advance may be prepared, and the thin plate 645 in which the window is opened may be attached on the insulating film 643.
  • lead-out contact holes are formed from the conductor film 641, conductor films in the contact holes are formed, and electrodes / wirings are formed.
  • the pressure sensor can be formed by forming the recess and the side wall polymer in the piezoelectric polymer by the imprint method.
  • the process becomes very simple.
  • a semiconductor substrate such as a silicon substrate is used as the substrate 611
  • a pressure sensor and an IC having various functions can be mounted together with a pressure sensor in the same substrate or chip. it can. Accordingly, the mounting area can be reduced, so that the mounting size can be reduced, and the connection wiring can be reduced, so that the reliability and yield can be improved.
  • the planar size of the substrate can be reduced.
  • a square one side W1 the distance between the concave recesses of the depth H1 in Ws, if one side is arranged in the area of the square L, 2 pieces ⁇ L / (W1 + Ws) ⁇ in this Since an area of about ⁇ L 2 + 4H1 ⁇ W1x ⁇ L / (W1 + Ws) ⁇ 2 ⁇ is subjected to pressure, about ⁇ 1 + 4 (H1 ⁇ W1x) / (W1 + Ws) ⁇ compared to the conventional method 2 ⁇ times the sensitivity.
  • the sensitivity is 9.3 times.
  • Ws can be made small to the limit of recessed part formation.
  • planar size W1 of the recess can be reduced to the limit at which the recess can be formed and various films can be formed in the recess. Since the current level can be made smaller than the above value, the sensitivity can be further increased.
  • FIG. 21 is a view showing a structure and a manufacturing method of a pressure sensor using a piezoresistive effect by arranging a piezoresistor on the side surface of the substrate side wall between adjacent recesses of the present invention.
  • FIGS. 21D and 21E are diagrams showing an example of a piezoresistive pattern on the side surface of the substrate side wall.
  • four piezoresistors 5014 (5014-1, 2, 3, 4 or 5, 6, 7, 8) are formed on the side surface 5021 of the substrate side wall 5011 having a square or rectangular shape.
  • the position of 5022 indicated by the solid line on the side surface 5021 of the substrate side wall is the boundary of the diaphragm portion. That is, the side surface 5021 of the substrate side wall is a diaphragm portion, and its center position O is most bulged or depressed due to a pressure difference between adjacent concave portions.
  • FIG. 21 (d) to 21 (e) are arranged so as to form a bridge circuit (so-called Wheatstone bridge circuit) including four piezoresistors shown in FIG. 21 (f).
  • the four piezoresistors are arranged around the substrate side wall 5021, the piezoresistors 5014-2 and 5014-4 are arranged in the same direction, and the piezoresistors 5014-1 and 5014-3 are They are arranged in the same direction. Therefore, due to the deformation of the diaphragm (substrate sidewall), the piezoresistors 5014-2 and 5014-4 change with the same resistance value (assuming the same resistance size), while the piezoresistors 5014-1 and 5014-3 change with the same resistance value.
  • the piezoresistors 5014-5, 6, 7, and 8 are arranged in the same direction, but the piezoresistors 5014-5 and 8 are arranged in the periphery, and the piezoresistors 5014-6 and 7 are in the center. Arranged in the direction. Accordingly, the piezoresistors 5014-5 and 8 change with the same resistance value, while the piezoresistors 5014-6 and 5014-7 change with the same resistance value, and the degree of change is different. Accordingly, since the change amount of the resistance value can be known from the measurement of the bridge circuit, the pressure can be calculated from the change amount of the resistance value. Although only the piezoresistors are shown in FIGS. 21 (d) and 21 (e), a wiring pattern for applying a voltage to the piezoresistors to flow a current is also formed on the side wall of the substrate.
  • recesses 5012 (5012-1, 2, 3) are formed in the substrate 5011.
  • An insulating film 5013 is formed in the recess 5012 and on the first surface of the substrate 5011, and a thin film resistor 5014 for piezoresistor is further laminated.
  • a resist pattern 5015 for patterning this thin film resistor is formed.
  • This resist is formed by an electrodeposition method or the like, and a resist pattern is also formed on a side surface which is a vertical surface of the substrate side wall by an exposure method (oblique). In a normal coating method (for example, dip, dripping, spin coating, screen coating), a thick photoresist is accumulated in the recess 5012.
  • the electrodeposition method is a method in which a photosensitive polymer dispersed in a solution is deposited on a conductive film as a coating film by electrophoresis.
  • a pattern can be formed in the recess by a method using a sheet-like dry film or a method using a photosensitive resist formed by a plasma polymerization method.
  • the thin film resistor is, for example, a chromium silicon (SiCrx) film, another silicide film, or a polycrystalline silicon film.
  • SiCrx chromium silicon
  • the resistance of the polycrystalline silicon film may be changed by changing the doping amount, or the resistance may be changed by an ion implantation method.
  • a polycrystalline silicon film 5014 is formed, and before the resist film 5015 is formed, ion implantation is performed on the entire surface to implant a concentration corresponding to a thin film resistor.
  • oblique rotation ion implantation In the case of a rectangular recess with only oblique ion implantation, four oblique ion implantations are required. However, if rotational oblique ion implantation is used, only one ion implantation is necessary. Further, a resist pattern is formed in a portion that becomes a piezoresistor, and high concentration ion implantation for wiring is performed. As a result, a predetermined ion implantation amount is applied to the piezoresistive portion, and high concentration ion implantation is performed to the portion that becomes the wiring pattern.
  • the thin film resistor is etched using the resist pattern 5015 as a mask, the thin film resistor portion and the wiring portion are patterned, and the resist 5015 is removed.
  • an insulating film 5020 is laminated. This insulating film 5020 protects the thin film resistor 5014.
  • the thin film resistor 5014 can be a piezoresistor or used as a wiring.
  • a thin plate 5016 is attached on the insulating film 5020, and the concave portions 5012 (5012-1, 2, 3) are covered. Thereafter, pressure transmission holes 5012 (5012-1, 2, 3) are opened in the thin plate 5016.
  • the thin plate 5016 in the contact region 5018 that takes the lead electrode from the thin film resistance wiring 5014 is removed.
  • a contact hole 5019 is formed, and a voltage applied to the thin film resistance wiring 5014 is applied so that a current can flow.
  • Wiring / electrodes may be further provided in this contact portion.
  • the piezoresistor and the bridge circuit wiring could be formed on the inner surface in the recess, that is, the side surface of the substrate side wall 5011 (5011-1, 2).
  • the pressure of the concave portion 5012-2 is P2
  • the pressure of the concave portion 5012-1 across the substrate side wall 5011-1 is P1, and P2> P1
  • the substrate side wall 5011-1 swells (deforms) toward the concave portion 5012-1.
  • the change in the piezoresistance value composed of the thin film resistor 5014 can be measured by the bridge circuit.
  • the bridge circuit can be formed on both sides of the side wall of the substrate side wall 5011-1, the sensitivity is doubled. The same applies to the resistance formed on both sides of the substrate side wall 5011-2 with the pressure of the recess 5012-2 being P2.
  • the bridge circuit of the present invention can be configured with a small planar area.
  • the size of the diaphragm is 300 ⁇ m ⁇ 300 ⁇ m
  • the width of the recess is 25 ⁇ m and the width of the substrate side wall is 5 ⁇ m
  • the size of the pressure sensor of the present invention is 60 ⁇ m ⁇ 300 ⁇ m, which is 1 in comparison with a planar conventional diaphragm. Since the area is / 5 and two bridge circuits can be assembled, the sensitivity is doubled. Further, if the same planar area is occupied, nine diaphragms can be formed and bridge circuits can be assembled on both sides thereof, so the sensitivity is 18 times.
  • the substrate of the present invention can use a polymer, rubber or the like, and can also use a recess or a thin film resistor in the polymer or rubber on a semiconductor substrate such as silicon using an imprint method.
  • the Young's modulus of polymers and rubbers is much smaller than that of silicon (silicon's Young's modulus is about 130 GPa, polymer is about 0.1 to 5 GPa, rubber is about 0.01 to 0.1 GPa), so even a diaphragm that is an order of magnitude smaller will have the same deformation. The quantity can be obtained.
  • the thickness of the polymer or rubber is set to about 50 ⁇ m, and the recess and the substrate side wall are formed by imprinting or photolithography + etching, and the size of the substrate side wall (diaphragm) is 30 ⁇ m (depth direction) ⁇ 30 ⁇ m (length). Direction), a large amount of deformation can be obtained even if the thickness of the substrate sidewall is 5 to 10 ⁇ m. Therefore, a piezoresistive pattern is formed on the side surface of the sidewall, which is similar to a conventional silicon substrate diaphragm (300 ⁇ m ⁇ 300 ⁇ m, thickness 5 to 10 ⁇ m). A change in piezoresistance can be obtained.
  • a piezoresistive pressure sensor can be fabricated by applying a polymer or rubber to the gap portion of the IC. Therefore, the pressure sensor + IC can be made into one chip, and the area of the IC can be hardly changed.
  • a recess having the same thickness as the polymer or rubber layer is formed on a semiconductor substrate such as silicon, and the polymer or rubber layer is embedded in the recess and the portion is used as a substrate, another silicon is formed.
  • the piezoresistive pressure sensor can also be used in a through-groove type that penetrates the substrate from the first surface to the second surface. It can also be formed on the side surface of the substrate side wall sandwiched between the first recess formed from the first surface side and the second recess formed from the second surface side.
  • FIG. 22 is a diagram showing another embodiment showing a structure and a manufacturing method when a piezoresistor is formed in a semiconductor substrate such as silicon.
  • a thin insulating film 5037 is formed on the first surface.
  • a conductor film 5033 is stacked.
  • the insulating film 5037 is stacked when there is a problem in forming the conductor film 5033 directly on the semiconductor substrate 5031.
  • the purpose is to improve adhesion, and the purpose is to prevent damage from entering the semiconductor substrate 5031 when the conductor film 5033 is removed.
  • the insulating film 5037 may be a thermal oxide film or a laminated film formed by CVD, PVD, or the like.
  • the conductor film 5033 is formed for the purpose of forming a photosensitive electrodeposition resist film. Further, the film thickness (in combination with the film thickness of the insulating film 5037) is set to such a thickness that impurity ions can enter the semiconductor substrate at the time of ion implantation. Therefore, the thinner the electrodeposition resist film, the better.
  • the insulating film 5037 has a thickness of 5 nm to 100 nm, and the conductor film has a thickness of 10 nm to 200 nm.
  • the conductor film 5033 is a conductive film capable of electrodeposition resist, and may be, for example, a doped silicon film, a metal film such as aluminum, titanium, or chromium, an alloy film, a conductive carbon film, or a conductive polymer.
  • a photosensitive electrodeposition film 5034 is laminated by an electrodeposition method, and exposure is performed by tilting a laser beam or the like in order to expose the inside of the recess (especially the side surface) in the case of a rectangular recess. In this case, it is necessary to perform exposure four times, but by rotating the substrate or the exposure to perform exposure, each side surface can be exposed by one exposure. In particular, areas that are to be piezoresistive and portions that are to be wiring are opened.
  • ion implantation is performed, and ions are implanted into the piezoresistor and wiring region inside the semiconductor substrate from the place where the window is opened.
  • oblique ion implantation is performed.
  • the concave portion is rectangular, it is desirable to irradiate the surface of the concave portion from the vertical direction. Therefore, ion implantation needs to be performed four times in order to implant ions into all the side surfaces.
  • the substrate may be rotated once.
  • the ion implantation acceleration energy is determined in consideration of these thicknesses and materials. Of course, it is also necessary to consider the thickness of the electrodeposition resist film serving as a mask.
  • the conductive film 5034 in the opened portion may be removed by etching and then ion implantation may be performed.
  • the insulating film 5037 also serves as an etching stopper for the conductor film 5034.
  • the electrodeposition resist film is removed, and the conductor film 5034 is further removed.
  • the insulating film 5037 may also be removed or left.
  • a heat treatment for activating the ion-implanted ions is performed to form an ion-implanted layer 5036.
  • An ion implantation layer 5036 serving as a piezoresistive region and an ion implantation layer 5036 serving as a wiring layer are formed on a substrate side wall 5031 (5031-1, 2) serving as a diaphragm. Since this insulating film 5037 is thin, an insulating film 5038 is formed next, and a conductor film 5039 is further formed.
  • this conductive film is to form an electrodeposition resist film 5040 on the conductive film.
  • a pattern is not formed in the recess 5032 (5032-1, 2), the pattern is formed only on the upper surface of the substrate 5031. Therefore, a photosensitive resist can be formed directly without forming the conductor film 5039.
  • the opening 5041 and the opening 5041 are formed on the first surface of the substrate 5031 in the recess by an oblique exposure method or the like. (FIG. 22C) Since this conductor film 5039 is for the purpose of forming the electrodeposition film 5040, the thinner the electrodeposition film 5040, the better.
  • the conductor film 5039 is removed by etching from the openings 5041 and 5042, and the insulating film 5038 in the openings is further etched to expose the ion implantation layer 5036 in the substrate 5031.
  • the electrodeposition resist film 5040 is removed, and further the conductor film 5039 is removed.
  • the conductor film 5039 can be left as long as there is no problem.
  • a conductor film 5045 is stacked. The conductor film 5045 is also stacked on the contact region 5043 (a flat portion on the substrate 5031) and the contact region 5044 (in the recess) to be in contact with the ion implantation layer 5036.
  • a metal silicide film, a doped polycrystalline silicon film, various metal films, a conductive polymer, or the like may be appropriately selected.
  • the conductor film 5039 may be left, and a conductor film 5045 such as a plating metal may be laminated on the conductor film 5039 and the contact region by a plating method or a selective CVD method.
  • the plating metal include Cu, Ni, and Cr, and examples of the selective CVD metal include W.
  • the conductor film 5045 is patterned, and the conductor film 5045 is removed by etching to form necessary wiring.
  • an insulating film 5046 is formed, and a thin plate 5047 is attached to cover the recess 5032 (5032-1, 2, 3).
  • the pressure transmission hole 5048 (5048-1, 2, 3) is opened. Further, the thin plate 5047 in the region where the lead electrode is to be formed from the conductor film 5045 is removed. These thin plate openings may be attached to the substrate 5031 by aligning the thin plate 5047 previously removed. Next, a connection hole (contact hole) 5051 with the conductor film 5045 is formed, and an extraction electrode 5052 is formed.
  • the piezoresistive layers can be formed on the side surfaces of the substrate side walls 5031-1 and 2, and the wiring by the ion implantation layer (diffusion layer) 5036 in the semiconductor substrate 5031 and the wiring by the conductor film 5045 connected thereto can be formed.
  • the substrate side wall 5031 resulting from the pressure difference due to the pressures P1, P2, and P3 applied to the recesses 5032 (5032-1, 2, 3) from the pressure transmission holes 5048 (5048-1, 2, 3) by assembling a bridge circuit.
  • the applied pressure difference can be obtained based on the amount of change in piezoresistance that changes due to the deformation of (5031-1, 2).
  • a diffusion layer 5036 can be formed instead of the ion implantation layer 5036.
  • the electrodeposition resist is removed, and the conductor film 5033 is further removed.
  • an opening of the insulating film 5037 is obtained.
  • a diffusion layer 5036 can be obtained from the opening of the insulating film 5037 by predeposition + diffusion with a desired concentration.
  • the insulating film 5037 serves as a pre-deposition and diffusion mask, it is desirable to stack the insulating film 5037 thicker than in the case of the ion implantation method.
  • an ion implantation layer or a predepot + diffusion layer can be further formed by the same method as described above.
  • the piezoresistive layer is the semiconductor substrate itself, and thus has an advantage of high reliability and quality.
  • FIG. 23 is a diagram showing an embodiment in which a resistor is formed on the side surface of the side wall.
  • through-grooves 8099 8099-1 to 5999
  • the support substrate 9021 is attached to the lower surface (second surface) of the silicon substrate 9001.
  • An insulating film 8991 is stacked on the side surfaces of the sidewalls 9001 (9001-1 to 9001-1) and the upper surface (first surface) of the 9001.
  • a photosensitive sheet (also referred to as a sheet-like photosensitive film) 9201 is attached to a surface (upper surface, first surface) where the through groove 8999 of the silicon semiconductor substrate 9001 is opened.
  • the photosensitive sheet 9201 When the photosensitive sheet 9201 is attached, it may be attached in a vacuum (or in a low pressure state).
  • the photosensitive sheet 9201 In the opening portion 9203 of the through groove 8999, the photosensitive sheet 9201 is slightly depressed because there is no portion that supports the photosensitive sheet 9201.
  • FIG. 23B when the photosensitive sheet 9202 is softened by pre-baking, the photosensitive sheet 9202 enters the through groove 8999 and moves to the side surface of the side wall 9001 (9001-1 to 61-1) and the bottom of the through groove 8999. Adhere to.
  • the photosensitive sheet 9201 enters the inside of the through groove 8999 by the pressure difference.
  • the inside of the through groove 8999 is vacuum (or low pressure) and there is almost no gas, the photosensitive sheet 9201 smoothly hangs down inside the through groove 8999, and the side surfaces of the side walls 9001 (9001-1 to 51-1) and It adheres firmly to the bottom of the through groove (that is, the opening surface of the support substrate 9021) without a gap.
  • the volume in the through groove 8999 of the photosensitive sheet 9201 is It is about d21 * h21 * w21 * t21. Assuming that the thickness of the photosensitive sheet immediately after adhesion is te, and the photosensitive film at the opening of the through groove 8999 has completely entered the through groove 8999 (actually, outside the opening of the through groove 8999, that is, on the silicon substrate 9001). Part of the photosensitive sheet is softened and enters the through groove 8999).
  • the photosensitive film 9201 adhering to the side surface of the side wall 9001 (9001-1 to 61-1) and the bottom of the through groove 8999 is irradiated with light EX12 and exposed using a mask.
  • the irradiation angle of the light EX12 is set to an angle of ⁇ 22 with respect to the surface of the silicon substrate 9101 and the side surface of the side wall 9001 is irradiated. This state will be described based on the schematic diagram of FIG.
  • the light EX12 is irradiated onto the photosensitive film 9201 attached to the side surface of the side wall 9001 through the pattern 9207 of the mask 9205.
  • the pattern width d22 of the pattern 9207 of the mask 9205 is a width of d22 / tan ⁇ 22 on the photosensitive film 9201 on the side surface of the side wall 9001.
  • the photosensitive film is removed where it is desired to form a resistor (in FIG. 23 (c), x22 portion). Therefore, in the example shown in FIG. 23C, the photosensitive film 9201 is a negative type.
  • the vacant part of the mask is reversed to the negative type so that the part where the resistor is formed is not irradiated with light.
  • the exposure direction is the same as the ion implantation described with reference to FIG. 34 so that the side surfaces of the side walls 9001 (9001-1 to 9001-1) on which the pattern is to be formed can be irradiated. That is, in FIG. 23B, when pattern formation is desired on the right side surface of the side wall, irradiation is performed from the right side (EX12 in FIG. 23B), and when pattern formation is desired on the left side surface of the side wall, irradiation is performed from the left side. (EX11 in FIG. 23 (b)).
  • the portion 9209 where the resistor is to be formed is opened as shown in FIG.
  • ion implantation II24, II25
  • II24, II25 is performed on the side surface of the side wall 9201 (9001-1 to 61-1), and the side wall of the opened portion 8209 is formed.
  • An ion implantation layer 9211 is formed on the side silicon substrate.
  • the ion implantation acceleration energy is determined depending on the depth at which the ion implantation layer 9211 is formed in consideration of the thickness of the insulating film 8991. If the acceleration energy of ion implantation is to be lowered, the insulating film 8991 in the portion 9209 having the window opened may be removed.
  • the insulating film is immersed in a wet etching solution or isotropic dry etching is performed.
  • ion implantation (II24, II25) is performed at an angle ( ⁇ 24, ⁇ 25) inclined in order to implant ions into the side surfaces of the side walls 9201 (9001-1 to 61-1).
  • the ion implantation is performed in the same direction as the ion implantation described with reference to FIG. 34 so that the side surfaces of the sidewalls 9001 (9001-1 to 9001-1) on which the windows are formed can be irradiated.
  • the window opening 9209 when the window opening 9209 is formed on the right side surface of the side wall, ions are implanted from the right side (II25 in FIG. 23D), and the window opening 9209 is formed on the left side surface of the side wall. If formed, ions are implanted from the left side (II24 in FIG. 23 (d)).
  • the ion implantation amount is determined by the concentration (resistance) of the resistor. Note that in the case of ion implantation, the insulating film 8991 may be omitted.
  • the resistor can also be formed by a diffusion method instead of ion implantation. In that case, after the insulating film 9209 of the portion 9209 having the window opened is etched and the photosensitive film 9201 is removed, the diffusion may be performed.
  • the photosensitive film 9201 is removed (removed). This removal is performed by wet stripping method such as organic resist stripping solution or concentrated nitric acid, or ashing using oxygen plasma or the like.
  • the photosensitive sheet is attached to the first surface side of the silicon substrate 9001 in a vacuum. This is preferably performed in a vacuum or at a low pressure of 1 atmosphere or less.
  • pre-baking is performed to attach the photosensitive sheet to the side wall side or bottom of the through groove.
  • the photosensitive sheet is patterned by exposure so that it can be connected to the resistor 9211 already formed. This exposure is similarly inclined to allow patterning on the side wall of the side wall.
  • patterning is performed so that the side surface pattern is connected to the wiring on the first surface.
  • ion implantation is performed on the opened portion. This ion implantation has a higher concentration than the ion implantation in which the resistor is formed, and it is necessary to lower the wiring resistance. Therefore, the patterning width is increased so that the resistance of the ion implantation layer is lowered.
  • This high-concentration ion implantation layer is connected to the resistor ion-implantation layer 9211, but the overlap is at both ends of the resistor 9211 so that the main body of the resistor 9211 is not subjected to high-concentration ion implantation.
  • the main body of the resistor 9211 needs to be covered with a photosensitive film.
  • the resistor and high-concentration ion-implanted layer (diffusion wiring layer) must be connected, so overlapping is essential.
  • a high-current ion implanter should be used. Is desirable.
  • a high-concentration diffusion layer (wiring layer) can also be formed by a diffusion method (predeposition).
  • the resistor and the low resistance diffusion wiring layer connected to the resistor can be formed on the side wall of the sidewall.
  • the impurity concentration of the resistor is about 10 17 / cm 3 to 10 20 / cm 3
  • the impurity concentration of the diffusion wiring layer (low resistance) is larger than the impurity concentration of the resistor and is about 10 19 / cm 3 to 10. 20 / cm 3 to 10 22 / cm 3 .
  • the impurity is P-type
  • the impurity is N-type
  • the impurity is N-type
  • the piezoresistive effect is large in the P-type
  • the resistor has a P-type impurity concentration
  • the sidewall The resistance change rate of the resistor with respect to the change rate increases, and the sensitivity increases.
  • FIG. 24 is a diagram illustrating a method for forming a photosensitive film on the side surface of the side wall.
  • a liquid type photosensitive film ordinary resist
  • a liquid photosensitive film also enters the inside of the through groove 8999.
  • the insertion type mask 9223 includes a support plate 9224 that supports a columnar pattern 9225 that enters the through groove 8999.
  • the shape of the columnar pattern 9225 is slightly smaller than the size of the through groove 8999, and the shape is substantially the same. That is, if the width of the through groove 8999 is d21, the depth (perpendicular to the paper surface) is w21, the width of the columnar pattern 9225 is d31, and the depth (perpendicular to the paper surface) is w31, d21> d31, w21. > W31.
  • the length h31 of the columnar pattern 9225 is made larger than the depth h21 of the through groove.
  • the insertion type mask 9223 is aligned with the silicon substrate 9001 having the through-groove 8999, gradually approached, and the columnar pattern 9225 is inserted into the through-groove 8999 as shown in FIG.
  • the distance from the bottom of the columnar pattern 9225 to the support substrate is f31.
  • the alignment between the insertion mask 9223 and the silicon substrate 9001 is very important.
  • the support plate 9224 is preferably made of a transparent material.
  • the insertion type mask 9223 is formed by etching, for example, a quartz substrate or the like using deep pit type anisotropic etching (Deep RIE). Note that exposure and development are possible even if the photosensitive film on the side surface is relatively thick.
  • the thickness of the photosensitive film on the side surface can be further reduced.
  • the insertion type mask 9223 is applied to the surface of the columnar pattern 9225 in advance while applying ultrasonic vibration or the like. Just pull it out. In this way, a photosensitive film having a thickness of approximately e1 or e2 can be formed on the side wall of the side wall. Thereafter, exposure may be performed to perform desired patterning. This technique is applicable not only to pressure sensors, but also to all pattern formations that form resist patterns on the side walls. If a pattern is further formed on the insertion type mask 9223 so that light can pass through the columnar pattern 9225, light exposure from the inside of the columnar pattern 9225 is not necessary. . After pre-baking, a desired photosensitive film pattern can be formed by irradiating light from the columnar pattern 9225, then pulling out the insertion type mask 9223, and then developing.
  • the substrate side wall surface of the present invention can be selected for the substrate side wall surface of the present invention.
  • the side wall surface 9101 is a (0xx) plane.
  • X is an arbitrary number
  • the (piezo) resistor can be formed in various orientations with respect to the side wall surface. For example, if the side wall surface is a (010) plane, the resistance change can be increased because the piezoresistance effect is maximized if the resistor is formed in the ⁇ 110> direction. The larger the deformation rate, the greater the difference in measured values and the better the sensitivity. Therefore, the resistor is disposed at the end of the side surface having a large deformation rate (strain).
  • the longitudinal direction of the resistor is arranged in the direction of the crystal axis having the largest piezoresistance effect, and the short side of the resistor is arranged in the direction of the crystal axis having the largest piezoresistance effect. It is desirable to arrange the direction. For example, when the surface orientation of the side wall of the substrate is (100), the longitudinal direction of the resistor is arranged in the ⁇ 110> direction and the short side direction of the resistor is arranged in the ⁇ 110> direction.
  • both side surfaces of the side walls are formed.
  • the pressure difference (P1-P2) can be detected by using the deformation of the side wall due to the pressure difference (P1-P2) applied to.
  • the Wheatstone bridge circuit but also other resistance measurement circuits can be used to measure the change of the piezoresistor due to the pressure difference and detect the pressure from the measured value.
  • the pressure sensor of the present invention and the LSI can be mounted on the same chip.
  • the area of the pressure sensor can be made very small compared to the conventional flat diaphragm, the chip size of the LSI is not increased.
  • the area of the pressure sensor is sufficient when the size of the conventional flat diaphragm is 500 ⁇ m * 500 ⁇ m, and the size of 500 ⁇ m * 200 ⁇ m in the case of four side walls. For one side wall, a size of 500 ⁇ m * 100 ⁇ m is sufficient, and a size of 500 ⁇ m * 50 ⁇ m or less is possible if the process conditions are optimized.
  • 25 (a) to 25 (c) are diagrams showing the structure of a capacitance type pressure sensor using a recess formed in a substrate and a manufacturing method thereof.
  • an insulating film 5113 is formed, and further a conductor film 5114 is formed.
  • a photosensitive film 5115 is formed, and a necessary pattern is formed.
  • the substrate 5111 may be a semiconductor substrate such as silicon or a compound semiconductor, an insulator substrate such as glass, quartz, polymer, or ceramic, or a conductor substrate such as metal, alloy, or conductive polymer. Alternatively, a substrate obtained by bonding these substrates may be used.
  • a liquid film such as a polymer, rubber, or paste (insulating or conductive) or a gel film formed on the substrate or the like may be formed, and the recess may be formed using an imprint method. Further, in FIGS. 25 (a) to 25 (c), the recess opens to the first surface (front surface) and does not penetrate the second surface (back surface), but the recess may be a through groove penetrating the second surface. good.
  • the substrate 5111 is an insulator, the insulating film 5113 is not necessarily formed. However, when the adhesion between the conductor film 5114 and the substrate 5111 is not so good, an insulating film may be stacked.
  • the photosensitive film 5115 is desirably formed as faithfully as possible inside the recess 5112.
  • an electrodeposition resist film is formed.
  • a method using a sheet-like dry film or a method using a photosensitive resist formed by a plasma polymerization method may be used.
  • a method of forming a resist by a normal coating method, dipping method, or the like may be used.
  • the photosensitive film 5115 is patterned by an exposure method (a photolithography method). For example, the bottom 5116 (5116-1, 2, 3) of the recess 5112 (5112-1, 2, 3) is opened.
  • the conductor film 5114 is etched using the patterned photosensitive film 5115 as a mask. When etching the conductor film 5114 formed on the inner surface of the recess, wet etching or isotropic dry etching is preferable.
  • the conductor film 5114 is cut at the substrate side wall upper surface 5119 (5119-1, 2) and / or at the recess bottom 5118 (5118-1, 2, 3) and / or at the side surface of the recess (side surface of the substrate side wall). Is done. Further, necessary wiring is formed on the first surface of the substrate 5111.
  • the conductive film is a polycrystalline silicon film, a silicide film, or a transparent conductive film (ITO, ATO, ZnO, etc.), it can be etched by dry etching using, for example, a hydrofluoric acid-based etchant or a halogen-based gas.
  • the conductor film When the conductor film is aluminum, it can be etched by, for example, dry etching using a phosphoric acid-based etchant or a halogen-based gas. For other materials, a good etching method may be selected as appropriate. By this etching, the conductor film 5114 is divided into 5114-1, 2, 3, 4, 5, 6 and the like. (However, necessary portions may be connected between them.) Next, an insulating film 5120 is stacked. This insulating film 5120 protects the conductor film 5114 and is also an insulating film that interposes the thin film and the conductor film 5114 to be attached thereafter. ⁇ FIG. 25 (b) ⁇
  • a thin plate 5121 is attached and the concave portion 5112 is covered.
  • This bonding method includes a method using an adhesive and a room temperature bonding method.
  • Pressure transmission holes 5122 (5122-1, 2, 3) are formed in the recesses 5112 (5112-1, 2, 3) of the thin plate 5121. It is also desirable to remove the thin plate 5121 in the region 5123 where the contact hole 5124 and the extraction electrode 5125 are to be formed. Further, the thin plate 5121 is removed from a portion where the other thin plate 5121 is unnecessary. Alternatively, a thin plate 5121 from which a portion unnecessary for the thin plate 5121 has been removed may be attached on the substrate 5111 in advance.
  • a contact hole 5124 is formed in the insulating film 5120 by using a photolithography method and an etching method, and a conductor film is formed in the contact hole 5124 to form a lead electrode 5125.
  • ⁇ FIG. 25 (c) ⁇ It is also possible to attach the thin plate after forming the extraction electrode or the like first.
  • FIG. 25 (d) shows a plan view of the pressure sensor shown in FIGS. 25 (a) to 25 (c).
  • a recess 5112 (5112-1, 2, 3, 4) and a conductor film 5114 (511114-1, 2, 3, 4, 5, 6, 7, 8) are shown.
  • the rectangular parallelepiped concave portions 5112 (5112-1, 2, 3, 4) are arranged in parallel, and the side walls 5111 (5111-1, 2, 3, 4) are arranged between the concave portions 5112 (5112-1, 2, 3, 4). 4) is formed.
  • a conductor film 5114 (51114-1, 2, 3, 4, 5, 6, 7, 8) is formed on the side surface of the side wall 5111 (5111-1, 2, 3, 4), including the inside of the recess.
  • the conductor film 5114 (5114-1, 2, 3, 4, 5, 6, 7, 8) is separated. As can be seen from FIG. 25 (d), when the conductor film 5114 is formed on the inner surface of the recess and the recess space therebetween is a capacitance space (for example, the recess 5112-2), the conductor serving as one electrode
  • the film 5114-3 is formed on the inner side surface of the concave portion 5112-2 of the substrate side wall 51111-1
  • the conductor film 5114-4 serving as the other electrode is formed on the inner side surface of the concave portion 5112-2 of the substrate side wall 51111-2.
  • the conductor film is etched away on the bottom surface of the recess and on the side surface of the recess (in this case, the short side of the recess).
  • a capacitive element can be formed in which the inside of the recess is a capacitive space, and the side wall surfaces 5114-3 and 4 on both sides are electrodes.
  • all of the conductor film 5114 (conductor film in the recess 5112-2 including 5114-3 and 5114-4) in one recess (for example, 5112-2) is etched. Remove.
  • the electrode formed in the recess (5112-1 or 5112-3) adjacent to this recess is used as the capacitor electrode.
  • the capacity component at this time is the space capacity of the recess, and the substrate side walls 5111-1 and 511-2 also form a capacity. Since the conductor film 5114 in the recesses 51112-1 and 5112-3 is left as it is, the conductor films 5114-1 and 5114-2 and the conductor films 5114-5 and 5114-6 are connected. In this way, resist patterning is not required in the recess 5112. Since the resist patterning is a flat portion of the first surface of the substrate 5111, the conductor film 5114 can be removed by a normal photolithography method and etching method. .
  • the space in the concave portion 5112 (5112-1, 2, 3, 4) is defined as the capacitance, and the conductive films on both sides thereof are formed as electrodes 5114 (5114-1, 2, 3, 4, 5, 6, 7). , 8)
  • the capacitor is completed.
  • the capacitances of these capacitors are C1, C2, C3, and C4, the capacitances of the capacitors can be increased or decreased by appropriately connecting these capacitors in parallel and / or in series.
  • FIG. 25 (f) is a diagram showing the operation and principle of the capacitive pressure sensor shown in FIGS. 25 (a) to 25 (d).
  • the structure shown in FIG. 25 (f) is slightly different from FIGS. 25 (a) to 25 (c), but is essentially the same structure.
  • the recess 5112 (5112-1, 2, 3, 4) is a through groove penetrating from the first surface to the second surface in the substrate 5111. The method of forming the through groove 5112 (5112-1, 2, 3, 4) has been described.
  • a through groove reaching the second surface is formed using vertical etching or imprint method. To do. Thereafter, the thin plate 5121 is attached to the first surface side with the thin plate 5126 attached. Thereafter, the thin plate 5126 may be replaced with another thin plate.
  • the resist pattern or the like formed on the first surface of the substrate 5111 is used as a mask to reach the second surface using vertical etching or imprinting. A through groove is formed.
  • the recess width (interelectrode distance) of the recess 511-2 is d1, the deformation amount of the substrate side wall 5111-1 at P1 ⁇ P2, and the deformation amount of the substrate side wall 51111-2 at P2> P3.
  • d3. d2 and d3 vary depending on the depth of the concave portion 5112 and become the largest near the center thereof.
  • the substrate sidewall 51111 is recessed toward the recess 5112-3 (deformation amount d5)
  • the substrate sidewall 5111-3 is recessed toward the recess 5112-3. (Deformation amount d6).
  • the recess width (distance between electrodes) of the recess 5112-3 when there is no pressure difference d4
  • ⁇ dielectric constant
  • S electrode area
  • the pressure difference can be obtained from the change in capacitance when the deformation is caused by an unknown pressure difference.
  • the substrates 5111-4 and 5111-5 are hardly deformed, so that the capacitance changes of the recesses 5112-1 and 5112-4 are only on one side. It becomes a deformation.
  • the recesses (or through grooves) of the present invention are manufactured, and the capacitance changes when the substrate side wall between these recesses is deformed by the pressure difference between the recesses. Can be sought.
  • the overall capacity becomes the sum of the individual capacities, so even if the amount of change is small, the overall is large. Since the capacitance changes, the sensitivity can be increased. Further, if the width of the recess is made smaller than the limit amount of change of the substrate side wall, the substrate side wall will not be deformed beyond (half of) the width of the recess, so that toothing and damage of the substrate can be prevented. In addition, since the pressure transmission hole and the electrode can be formed on the second surface side, it is easy to design (especially, in either case shown in FIGS. 25A to 25C).
  • the capacitance type pressure sensor of the present invention can also be produced by the imprint method.
  • a polymer or rubber having a low Young's modulus is used, the capacitance changes greatly even if the size is small. It becomes possible to make it.
  • a recess having a depth of 10 to 500 ⁇ m and a length and width of approximately 1000 ⁇ m or less is formed in the substrate, and various polymers and rubber are applied to the recess to fill the recess.
  • a concave portion is formed in the liquid or gel state by an imprint method. Alternatively, the concave portions are formed by photolithography and etching after the polymer or rubber is cured.
  • the embedded pressure sensor can be formed in a semiconductor substrate such as a silicon substrate.
  • the conductor film of the pressure sensor can also be used as the conductor film used for a device such as an IC.
  • the curing temperature of the polymer or rubber can be set lower than about 300 ° C. to 500 ° C., which is the final temperature of the semiconductor process (final protective film formation temperature).
  • a pressure sensor may be formed by forming a recess in the semiconductor substrate. What is necessary is just to wire-connect to pads, such as IC, at the time of formation of the conductor film of a pressure sensor.
  • a recess is formed in the semiconductor substrate before forming the final conductor film used in the semiconductor process, and the polymer or the like is inserted into the recess.
  • the pressure sensor conductor film can be used as the final conductor film used in the semiconductor process.
  • a final protective film insulating film
  • the pressure sensor recess may be covered with a thin plate.
  • FIGS. 26 (a) and 26 (b) are views showing an example of a pressure sensor package.
  • FIG. 26 (a) is a plan view thereof
  • FIG. 26 (b) is a side sectional view thereof.
  • the outside of the pressure sensor is The substrate 5131 (5131-1).
  • a concave portion (or through groove) 5132-2 surrounds the substrate side wall 5131-2.
  • a conductor film 5133 (5133-1, 2, 3, 4) is laminated on the substrate side wall 5131-2 on the inner side surface of the recess 5131-1. Unnecessary films are not described in the explanation.
  • the substrate side wall 5131-2 between the inner recess 513-1 and the outer recess 513-2 is deformed by the pressure difference between these recesses.
  • FIG. 26A there are four substrate side walls, and each substrate side wall is deformed by being recessed inward or bulging outward in accordance with a pressure difference.
  • a change in capacitance between these opposing electrodes for example, 5133-1 and 5133-3, 5133-2 and 5133-4.
  • the film structure as described above is configured to detect the amount of charge drawn to the electrodes formed on both sides of the piezoelectric film.
  • the film structure as described above is configured to detect the amount of charge drawn to the electrodes formed on both sides of the piezoelectric film.
  • FIGS. 26 (c) and (d) FIGS. 26 (c) and (d)
  • FIG. 26 (c) is a plan sectional view
  • FIG. 26 (d) is a side sectional view
  • the film structure has already been described.
  • the electrodes 5133-2 on the inner side surface of the recess 5132-1 may all be connected to each other, because the piezoelectric substrate or the piezoelectric film changes in the same direction.
  • Piezoelectric films and electrodes can also be manufactured outside of 5131-2, and these electrodes 5133-1 can be connected. Since there is no need for patterning inside the recess, the process is also simple.
  • a piezoresistive pressure sensor in which a piezoresistive element is formed on the side surface of the substrate side wall to form a bridge circuit can also be fabricated on each surface of the substrate side wall and the front and back surfaces, the detection sensitivity is increased.
  • the thickness of the outer wall 5131-1 of the mounting package shown in FIG. 26 is not deformed by the pressure used.
  • FIG. 26 does not show the pressure transmission hole and the extraction electrode, they may be appropriately formed at a necessary place.
  • Such a mounting package can be formed extremely small, can be applied to a semiconductor process, and the process is very simple. Therefore, a large number can be formed from one substrate.
  • a mounting package of 0.5 mm * 0.5 mm * 0.5 mm can be realized, and if it is a 6-inch wafer, about 65,000 can be formed, and an extremely cheap pressure sensor can be realized.
  • the sensor device of the present invention has been described as being fabricated on a substrate having a thickness of 2 mm or less, it can be readily understood from the structure that it can be applied to a thicker substrate.
  • a method of forming a vertical recess in a substrate having a thickness of 2 mm or more there is a method of manufacturing by an imprint method. A thick resin can be applied and a recess can be produced by imprinting using a mold of an appropriate size.
  • the through hole can be produced by punching the substrate with a punching die having an appropriate size.
  • the conductor film on the inner surface of the recess or the through-hole is laminated with a desired thickness by a CVD method, a PVD method, a plating method, or the like.
  • a piezoelectric film and an insulator film are also laminated by a CVD method, a PVD method, or the like. Other methods may be adopted as described above.
  • the large sensor device can be used for floor power generation, for example.
  • FIG. 27 is a diagram showing an ink jet device using the vertical pressure operating element of the present invention.
  • the substrate has a plurality of recesses penetrating from the first surface (front surface) to the second surface, the side surfaces being surrounded by the substrate side wall, the first thin plate is attached to the upper surface of the substrate side wall, and the lower surface of the substrate side wall A second thin plate adheres to the upper portion of the concave portion, and the upper portion of the concave portion is covered with the first thin plate, and the lower portion of the concave portion is covered with the second thin plate.
  • the upper part is the first thin plate
  • the lower part is the second thin plate
  • a part of the concave portion (ink reservoir concave portion) whose side surface is surrounded by the substrate side wall is a part of the first thin plate covering the upper part.
  • Ink is introduced into the concave portion from above the first thin plate through the through hole (ink introduction hole), and ink is usually contained in the ink reservoir concave portion.
  • a part of the second thin plate covering the lower part of the concave part penetrates the outside, and ink can be ejected from the concave part through the through hole (ink ejection hole).
  • a recess (adjacent recess) adjacent to at least a part of the side wall constituting the side surface of the recess into which ink is introduced is a recess whose side surface is surrounded by the substrate side wall, and the upper portion of the adjacent recess is the first It is covered with a thin plate, and the lower part of the adjacent concave portion is covered with a second thin plate. A part of the thin plate covering the upper portion of the adjacent recess penetrates the outside, and the pressure of the adjacent recess can be increased or decreased through the through hole (pressure transmission hole).
  • the substrate side wall separating the adjacent concave portion and the ink reservoir concave portion swells toward the adjacent concave portion, and as a result, the ink introduction hole from the external ink liquid container Ink flows into the ink reservoir recess.
  • a certain pressure for example, 1 atm
  • the pressure of the adjacent recess is made higher than a certain pressure (for example, 1 atm) through the pressure transmission hole opened in the thin plate covering the upper portion of the adjacent recess.
  • the side wall of the substrate separating the swells toward the ink reservoir recess, and the ink in the ink reservoir recess is ejected outside through the ink discharge hole.
  • the structure of the ink jet element using the substrate in which the concave portion of the present invention is formed is the same as that of the pressure sensor described so far, and the outline of the manufacturing method will be described below.
  • the second thin plate 2015 is attached to the second surface (back surface) of the substrate 2011.
  • the substrate 2011 can be variously applied to a semiconductor substrate such as a silicon substrate, an insulating substrate such as a glass substrate or a plastic substrate, a conductor substrate such as iron, copper, an alloy, or a metal.
  • the second thin plate 2015 is also a semiconductor substrate such as a silicon substrate, an insulating substrate such as a glass substrate or a plastic substrate, Various conductive substrates such as iron, copper, alloys and metals can be applied.
  • the substrate 2011 and the second thin plate 2015 can be attached using an adhesive (including metal, low-melting glass, or the like), or can be attached using room temperature bonding, diffusion fusion, high temperature bonding, or anodic bonding.
  • the silicon substrate and the glass substrate can be firmly attached by anodic bonding with an electric field opened. Thereafter, a thick resist pattern is formed on the first surface of the substrate 2011 by photolithography or imprinting.
  • a resist pattern may be formed after an insulating film is formed over the substrate 2011. Since the substrate 2011 is etched thereafter, the thickness of the resist is set such that the pattern shape can be maintained without disappearing during the etching. By using this photoresist pattern, the substrate 2011 is anisotropically etched (dry etching). In order to form the concave portion of the substrate 2011 as faithfully as possible to the photoresist pattern, it is desirable that the concave portion is etched as close to the substrate surface (first surface) as possible according to the pattern dimension. The substrate 2011 is etched until it penetrates the second surface. Since the second thin plate 2015 is attached to the second surface, the second thin plate is etched using the second thin plate as an etching stopper.
  • the second thin plate 2015 is excessively etched during overetching after the substrate 2011 is etched.
  • a concave portion in this case, better referred to as a through groove
  • the etching species ion species generated by etching
  • the concave portion 2017 of the substrate 2011 penetrates, the generation of specific etching species decreases. By using this as an end point, the amount of overetching can be reduced. it can.
  • the resist and deposits generated in the recesses 2017 during etching are removed, and the first thin plate 2013 is attached to the first surface.
  • This adhesion can also be performed using an adhesive (including metal, low melting point glass, etc.), room temperature bonding, diffusion fusion, high temperature bonding, and anodic bonding.
  • an adhesive including metal, low melting point glass, etc.
  • room temperature bonding room temperature bonding
  • diffusion fusion high temperature bonding
  • anodic bonding When the substrate 2011 is silicon and the first thin plate 2013 is glass (or vice versa), these substrates can be firmly attached to each other using anodic bonding.
  • an adhesive is used, the first surface of the substrate 2011 is faced down, the first surface is brought into contact with the adhesive liquid, and the adhesive is adhered only to the upper surface of the side wall between the recesses, and is adhered to the first thin plate.
  • thermoplastic (thermosoftening) adhesive may be used for adhesion between the second thin plate 2015 and the substrate 2011.
  • the process is performed at a temperature equal to or lower than Tg until the second thin plate 2015 and the substrate 2011 are attached and then removed.
  • the temperature at which the first thin plate 2013 is attached needs to be equal to or lower than this Tg.
  • the temperature needs to be equal to or higher than Tg. Therefore, it is necessary to prevent the adhesiveness between the first thin plate 2013 and the substrate 2011 from being deteriorated at this temperature.
  • a low melting point metal or a low melting point alloy may be used as the adhesive.
  • the subsequent process must be performed at a temperature equal to or lower than the melting point or softening temperature Tm.
  • the substrate 2011 having a large number of recesses (penetrating grooves) penetrating from the first surface to the second surface was produced.
  • the first thin plate 2013 is closed on the first surface side (upper part or front surface side) of the recessed portion that penetrates.
  • the second thin plate 2015 is closed on the second surface side (lower part or back surface side) of the penetrating recess.
  • These recesses include a recess 2017 (2017-2, 5) into which ink enters and a recess 2017 (pressure applying recess) (2017-1, 3, 5) for applying pressure.
  • a pressure transmission hole and an ink introduction hole are formed in the first thin plate 2013.
  • a resist pattern for forming the pressure transmission hole and the ink introduction hole is formed on the first thin plate 2013 by using a photolithography method or an imprint method.
  • the first thin plate 2013 is removed by etching to produce pressure transmission holes 2019 (2019-1, 3, 4) and ink introduction holes 2019 (2019-2, 5).
  • the thickness of the first thin plate 2013 may be thinned before resist patterning using a polishing method, a full surface wet etching method, or a full surface dry etching method.
  • variety of a recessed part can also be 10 micrometers or more, there are also the method of opening with a drill, the method of opening with a laser beam, or the method of opening with a high-pressure water flow.
  • the laser is irradiated from above the first thin plate 2013. Since there is a possibility that the second thin plate 2015 on the lower side also has a hole, the first thin plate is used to prevent this.
  • the first thin plate 2013 can be perforated by laser light, but the second thin plate 2015 cannot be perforated by the same laser light. You can do it.
  • the ink container recess 2019 (2019-2, 5) always has both the ink introduction hole and the ink discharge hole ⁇ 2023 (2023-1, 2) on the second thin plate 2015 side ⁇ .
  • the holes of the first thin plate 2013 and the second thin plate 2015 can be formed simultaneously, and the number of processes (steps) is reduced.
  • the alignment error may be 1 to 3 ⁇ m
  • a metal mask or the like may be used when forming holes with laser light or high-pressure water flow.
  • an external mask such as a metal mask may be used without using the photolithography method or the imprint method, and the process becomes simple.
  • ink discharge holes 2023 (2023-1, 2) are formed in the second thin plate 2015 for discharging ink.
  • This ink discharge hole is not formed in the pressure application recess 2017 (2017-1, 3, 4).
  • the method for forming the ink discharge hole 2023 may be the same as the method for forming the ink introduction hole described above.
  • a means for smoothing the shape of the holes is taken if necessary. For example, when the first thin plate 2013 and the second thin plate 2015 are glass, light hydrofluoric acid treatment may be performed.
  • FIGS. 27B and 27C are plan views showing the inkjet device of the present invention.
  • FIG. 27B shows an example, in which rectangular parallelepiped recesses 2017 (2017-1, 2, 3) are adjacently arranged in parallel.
  • FIG. 27C is an example of this, and a pressure application recess 2017 (2017-1, 3) surrounds a square (or rectangular parallelepiped) ink container recess 2017-2 via a substrate side wall 2011-2. .
  • the substrate side wall 2011-2 may be considered as a diaphragm.
  • the maximum deflection of the side wall 2011-2 is approximately given by the following calculation formula.
  • Wmax ⁇ * z * h 2 a 2 / (Ey 3 )
  • the Young's modulus E 100 GPa to 200 GPa (with crystal orientation dependency).
  • ⁇ 0.0138
  • Wmax is about 600 z / y 3 ( ⁇ m).
  • z is shown in Mpa units
  • the above-described deflection is when the substrate is silicon
  • a highly accurate inkjet device can be manufactured by variously changing this material.
  • the Young's modulus of polycarbonate is 2.2 GPa
  • the diaphragm has a square shape of 300 ⁇ m * 300 ⁇ m
  • Wmax ⁇ 5 ⁇ 10 4 * (z / y 3 ) It is a large deformation of about 50 ⁇ m at atmospheric pressure.
  • the Young's modulus is 0.01 to 0.1 GPa.
  • the method for producing the ink jet device of the present invention using the imprint method is the same as that described in FIG.
  • the substrate 611 corresponds to the second thin plate 2015.
  • the insulating film 633 is not necessarily formed.
  • a film remains at the bottom of the recess (615B in FIG. 19). Therefore, in order to penetrate the recess to the substrate (second thin plate) side, the entire surface is etched to remove the remaining film. If necessary, the second thin plate and the first thin plate are thinned to a desired thickness by a polishing method, an etching method, or the like.
  • the ink jet device of the present invention does not need to form an insulating film after forming a recess (through recess) (although it may be formed as a protective film), and does not form a conductor film. Therefore, elastic rubber can also be used.
  • rubber include various rubbers (natural rubber and synthetic rubber), such as silicone rubber, fluorine rubber, nitrile rubber, butyl rubber, styrene rubber, butadiene rubber, synthetic natural rubber, isoprene rubber, chloroprene rubber, polysulfide rubber, urethane rubber. Natural rubber, acrylic rubber, and ethylene propylene rubber can be used.
  • the ink container recess 2017 receives pressure (from two directions) from the pressure application recesses 2017-1 and 2017-3 on both sides of the substrate side walls 2011-2 and 2011-3. Ink is discharged into or discharged from the ink container recess 2017.
  • the ink container recess 2017 is surrounded by the four directions of the pressure applying recesses 2017-1 and 2017-3 with the substrate side walls 2011-2 and 2011-3 interposed therebetween. Therefore, the ink is sucked into or discharged from the ink container recess 2017 under pressure from four directions. If the depth Hsub, length Lc, and substrate side wall width Wc of the recess 2017 are the same in FIGS.
  • the ink container recess shown in FIG. Ink can be sucked and discharged with about twice the force of the ink container recess shown in b).
  • the suction amount and the discharge amount are the same, the ink container recess shown in FIG. 27C has a smaller force (pressure difference) than the ink container recess shown in FIG. Can be done.
  • the shape of the ink container recess 2017-2 is a cylindrical shape, the force is equally received from the pressure applying recess 2017 surrounding the periphery, so that the force due to the pressure difference The ink can be evenly distributed and efficiently discharged and discharged.
  • FIGS. 28A and 28B are diagrams illustrating an operation method of the inkjet device of the present invention.
  • the ink reservoir container 2021 (2021-1, 2) is connected to the ink container recess 2017 (2017-2, 5) through the ink introduction hole 2019 (2019-2, 5) (which may be through an ink passage tube here). Further, the ink is discharged to the outside through the ink discharge holes 2023 (2023-1, 2).
  • the pressure may be air or other gas (such as nitrogen) or liquid via a pressure conduit or the like with a pressure generator (not shown, for example, a high pressure gas container, gas compressor, liquid compressor, etc.)
  • the generated pressures P1, P2, and P3 are transmitted to the pressure application recess 2017 (1, 3, 4) through the pressure transmission hole 2019 (2019-1, 3, 4).
  • the pressure in the ink container recess 2017 is Pq, if Pq> P1, the substrate side wall 2011-2 between the ink container recess 2017-2 and the pressure application recess 2017-1 moves toward the pressure application recess 2017-1. Deformation (bulging) ⁇ FIG.
  • the opening / closing valve When the ink is introduced into the ink container recess 2017-2, the opening / closing valve is opened to allow the ink in the ink container recess 2017-2 to go outward. When the ink is discharged, the opening / closing valve may be closed, and in this way, ink can be put into and out of the ink container recess 2017-2 efficiently.
  • the ink discharge hole 2023-1 or the ink discharge pipe (not shown, a discharge passage leading to the outside from the ink discharge hole 2023) is provided with an opening / closing valve, the ink is introduced into the ink container recess 2017-2. It is also possible to close the open / close valve and open the open / close valve when discharging the ink in the ink container recess 2017-2 to the outside. It can be performed efficiently.
  • the pressure P2 of the pressure application recess 2017-3 is equal to the pressure P1 of the pressure application recess 2017-1. Therefore, the amount of ink flowing into and out of the ink container recess 2017-2 can be controlled. Further, the ink flow into and out of another ink container recess 2017-5 can also be controlled separately from the other pressures P1 and P2 by controlling the pressure P3 of the pressure application recess 2017-4 around it.
  • the substrate side wall 2011-4 between the pressure application recess 2017-3 and the pressure application recess 2017-4 is made thick so that it does not deform much even if the pressure fluctuates. By doing so, P2 and P3 can be controlled without being affected by each other.
  • the substrate side wall 2011-5 between these recesses is not deformed. At this time, if an open / close valve provided in a passage leading to the ink introduction hole 2019-5 or the ink discharge hole 2023-2 is interlocked (closed at this time), the ink is not discharged to the outside. That can be done reliably.
  • 2017 (2017-11, 12, 13, 14) can be arranged as shown in FIG.
  • An ink jet apparatus is manufactured by arranging an appropriate number of these arrays.
  • One array shown in FIG. 28C can be considered as 1 dot.
  • the ink suction and discharge valves and pressure are controlled to discharge various color inks corresponding to the colors to form colors.
  • the size of the ink container recess 2017 is Lc1 * Lc2
  • the size of the pressure application recess 2017 is Lc3 * Lc2
  • the distance between the recesses is Wc
  • the size of 1 dot is ⁇ 2 (Lc1 + Lc3) + 4Wc ⁇ * ⁇ 2Lc2 + 2Wc ⁇ .
  • Lc1 10 ⁇ m
  • Lc2 20 ⁇ m
  • Lc3 10 ⁇ m
  • Wc 5 ⁇ m
  • the size of 1 dot is 60 ⁇ m * 50 ⁇ m.
  • the resolution is 423 dpi * 508 dpi, which is a considerably good printing resolution.
  • the size of 1 dot is (Lc1 + Lc3 + 2 Wc) * (Lc2 + Wc).
  • the size of 1 dot is 30 ⁇ m * 25 ⁇ m, so the resolution is 846 * 1016 dpi. Very good print resolution. Since the ink jet device of the present invention can be further miniaturized, it is possible to realize even better resolution.
  • FIG. 29A is a diagram showing an ink jet device using a diaphragm type actuator.
  • the substrate 2011 is a piezoelectric body.
  • the piezoelectric substrate is a substrate of a substance exhibiting a piezoelectric effect, and is also called, for example, lead zirconate titanate (zirconate / lead titanate (Pb (Zr X Ti 1-X ) O 3 0 ⁇ x ⁇ 1)).
  • PZT barium titanate
  • lead titanate potassium niobate
  • lithium niobate lithium tantalate
  • sodium tungstate sodium oxide
  • lithium tetraborate and other ceramics having a perovskite structure and a tungsten-bronze structure
  • quartz, quartz, Rochelle salt topaz, tourmaline
  • berlinite aluminum phosphate
  • aluminum nitride gallium phosphate
  • gallium arsenide gallium arsenide
  • a piezoelectric polymer ⁇ eg, polyvinylidene fluoride ⁇ .
  • the method for forming the recesses 2017 (2017-1, 2, 3, 4, 5) from these substrates is the same as the method described so far.
  • a conductor film 2031 is laminated.
  • the conductive film 2031 generates an electric field on the surface of each substrate side wall to generate a substrate side wall (particularly, the substrate side wall 2011-2 between the ink container recess 2017-2 and the pressure application recess 2017-1, the ink container recess 2017).
  • the conductor film 2031 is etched on the upper surface of the substrate side wall 2011 (2011-1, 2, 3, 4, 5, 6) by using a photolithography method, an imprint method, an etching method, or the like, and is going to be deformed.
  • the conductor films in the recesses (particularly the ink container recess and the pressure application recess) present on both sides of the substrate side wall are not connected. That is, the conductor film 2031 is cut by 2032 (2032-1, 2, 3, 4, 5, 6).
  • an insulating film 2034 is stacked to protect the conductor film 2031.
  • the insulating film 2034 is also laminated on the portion 2032 (2032-1, 2, 3, 4, 5, 6) where the conductor film 2031 is cut.
  • the first thin plate 2013 or the like is attached on the piezoelectric substrate 2011, and the pressure transmission holes 2019 (2019-1, 3, 4) and the ink introduction holes 2019 (2019-2, 5) are opened.
  • the ink discharge hole 2023 (2023-1, 2023-2) is opened in the second thin plate 2015, and the ink reservoir container 2021 (2021-1, 2) and the like are connected to the ink introduction hole 2019 (2019-2, 5).
  • the conductor film 2031 is exposed on the bottom surface of the ink container recess.
  • the number of processes is not increased.
  • the conductor film is laminated with the second thin plate 2015 removed, the conductor film is not laminated on the second thin plate 2015. . Thereafter, the second thin plate 2015 may be attached and the ink discharge holes 2023 (2023-1 and 2023-2) may be opened.
  • a second thin plate having an ink discharge hole 2023 (2023-1, 2023-2) in advance may be attached, and the conductor film 2031 is also applied to the ink discharge hole 2023 (2023-1, 2023-2).
  • the electrode 2031 (2031-1, 2, 3, 4, 5, 6, 7) of the conductor film 2031 is pulled out.
  • the first thin plate 2013 in the region where the electrode / wiring is to be formed is removed, and then a contact hole is formed in the insulating film 2034 to expose the conductor film 2031 and the lead electrode is taken out from this portion.
  • a conductor film is newly formed in the contact hole to form an electrode / wiring, or wire bonding is performed on this portion to form a lead electrode / wiring.
  • the electrodes are formed on both sides of the piezoelectric substrate side walls 2011-2, 3, 5, etc. in this way, when an electric field is applied to the electrodes on both sides, the substrate side walls 2011-2, 3, 5 etc. are deformed, Depending on the orientation of the electrode (due to the difference in the polarity of the electrodes), the concave portion of the ink container swells or dents.
  • an electric field is applied between the electrodes 2031-2 and 2-31-3 to swell the ink container recess 2017-2, and from the ink reservoir container 2021-1 to the ink container recess 2017-2 through the ink introduction hole 2019-2. Ink the ink.
  • the pressure application recess 2017-1 is recessed, the gas in the pressure application recess 2017-1 goes outside through the pressure transmission hole 2019-1.
  • the ink container recess 2017-2 is recessed by applying a reverse electric field to the electrodes on both sides, and the ink in the ink container recess 2017-2 is discharged outside through the ink discharge hole 2023-1.
  • the piezoelectric film 2039 is formed in the shape of the substrate side wall 2011 (2011-1, 2, 3, 4, 5, 6), and the conductive film 2031 and the conductive film 2035 formed above and below the piezoelectric film 2039 are formed.
  • the electrodes an electric field is applied to these electrodes to deform the piezoelectric film 2039 so that the substrate sidewalls (particularly, the substrate sidewalls 2011-2 and 2011-3 on both sides of the ink container recess 2017-2, the ink container recess 2017-5 By deforming the substrate side wall 2011-5) together, the ink is sucked into the ink container recess 2017-2 or 2017-5, and the ink is discharged from the ink container recess 2017-2 or 2017-5.
  • the structure and the manufacturing method are the same as those shown in FIG. 27 to FIG. 29A, except that ink is used and no pressure is applied. Also, the operation is reversed, and the operation is different in that the substrate side walls are moved by applying a potential to the conductive films 2031 and 2035 above and below the piezoelectric film 2039.
  • a pressure application recess 2017 (2017-1, 3, 4) and an ink container recess 2017 (2017-2, 5) are formed in the substrate 2011 to which the second thin plate 2015 is adhered, and the substrate side wall 2011 ( 2011, 1, 2, 3, 4, 5, 6).
  • the conductor film 2031 is formed, and the conductor film 2031 which does not have the same polarity is cut at 2032 (2032-1, 2, 3, 4, 5, 6) on the upper surface of the substrate side wall. Wiring necessary for the conductor film 2031 is formed also in other places.
  • the piezoelectric film 2039 is formed, and further the conductive film 2035 is formed.
  • the conductive film 2031 which does not have the same polarity is formed on the upper surface 2037 (2037-1, 2, 3, 4, 5, 6) of the substrate side wall. Disconnect with. Wiring necessary for the conductor film 2035 is formed also in other places.
  • an insulating film 2036 for protecting the conductor film 2035 is formed.
  • the first thin plate 2013 is attached on the substrate 2011, and is drawn out from the pressure introduction holes 2019 (2019-1, 3, 4), the ink introduction holes 2019 (2019-2, 5), and the conductor films 2031 and 2035.
  • the first thin plate 2013 is removed by etching in a region where an electrode is formed.
  • An ink discharge hole 2023 (2023-1, 2) is also formed on the second thin plate. When the ink discharge holes 2023 are formed, the conductor films 2031 and 2035 are exposed, so that insulating films 2033 (2033-1, 2) and 2038 (2038-1, 2) are formed to cover the exposed portions.
  • the conductor film 2031 lower electrode
  • the piezoelectric film 2039 and the conductor film 2035 (upper electrode) formed on both sides of the substrate side walls 2011-2, 2011-3, 2011-5.
  • the piezoelectric film 2035 is deformed when an electric field is applied between the upper electrode and the lower electrode.
  • the substrate side wall is deformed and the ink container recesses 2017-2 and 2017-5 swell or dent, so that ink can be sucked into the ink container recesses 2017-2 and 2017-5.
  • Ink in the ink container recesses 2017-2 and 2017-5 is discharged to the outside.
  • Open / close valves are attached to the ink introduction holes 2019-2 and 2019-5 connected to the ink container recesses 2017-2 and 2017-5 and the ink passages connected to the ink discharge holes 2023-1 and 2023-2. If the voltage application to the upper and lower electrodes is linked, ink can be put in and out more accurately.
  • these ink jet devices are also liquid ejection devices. Furthermore, since it can be applied not only to a liquid but also to a gas, it can be said to be a gas ejection device, or a medium ejection device that collectively includes a liquid and a gas.
  • FIG. 30A is a diagram showing an example of the pump device.
  • Through grooves (or through recesses) 2042 (2042-1, 2, 3, 4) penetrating from the first surface to the second surface are formed in the piezoelectric substrate 2041, and these through grooves 2042 (2042-1, 204) are formed. 3, 4), substrate side walls 2041 (2041-2, 3, 4) are formed.
  • the substrate side wall facing the substrate side wall 2041-2 in the through groove 2042-1 is designated as 2041-1
  • the substrate side wall facing the substrate side wall 2041-4 in the through groove 2042-4 is designated as 2041-5. To do.
  • a conductive film 2043 (2043-1, 2, 3,..., 8) is laminated on the inner side surface of the through groove 2042 (2042-1, 2, 3, 4), that is, the side surface of the substrate side wall, and further thereon. Further, an insulating film 2044 (2044-1, 2, 3,..., 8) is laminated.
  • a first thin plate 2047 is attached to the first surface (upper surface or surface) of the piezoelectric substrate 2041.
  • a second thin plate 2048 is attached to the second surface (lower surface or back surface) of the piezoelectric substrate 2041. Inside the first thin plate, a passage 2046 (2046-1) communicating with the outside (or another through groove) (not shown) is formed, and is connected to the through groove 2042 (2042-1).
  • a passage 2046 (2046-2) is formed in the first thin plate so as to communicate from the through groove 2042 (2042-2) to the through groove 2042 (2042-3). Furthermore, a passage 2046 (2046-3) is formed in the first thin plate so as to communicate with the outside (or another through groove) (not shown) from the through groove 2042 (2042-4). These passages 2046 (2046-1, 2, 3) may be provided with on-off valves 2049 (2049-1, 3, 5).
  • a passage 2045 (2045-1) is formed which leads from the through groove 2042 (2042-1) to the through groove 2042 (2042-2). Furthermore, a passage 2045 (204-2) that leads from the through groove 2042 (2042-3) to the through groove 2042 (2042-4) is formed inside the second thin plate 2048. These passages 2045 (2045-1, 2) may be provided with opening / closing valves 2049 (2049-2, 4).
  • the conductor films 2043 (2043-1, 2, 3,..., 8) formed on the side surface of the substrate side wall 2041 are respectively formed with lead-out wirings / electrodes so that voltages can be individually applied. ing.
  • the piezoelectric substrate side wall 2041 (2041-1, 2, 3, 4, 5) Can be deformed outward. Accordingly, when the direction in which the piezoelectric substrate side wall 2041 (2041-1, 2, 3, 4, 5) is moved and the magnitude and polarity (plus or minus) of voltage application coincide, the lead wiring / electrode is connected. be able to.
  • the conductor films in the same through groove have the same size and the same polarity, the operation of one through groove is performed by alternately switching between positive and negative voltages (ie, alternating current application).
  • the substrate side wall dents or swells inside the through groove.
  • the on-off valve 2049 (2049-2) is closed, the on-off valve 2049 (2049-1) is opened, and a voltage is applied to the conductor films 2043-1 and 2043-2 to expand the through groove 2042-1.
  • the liquid or gas can be sucked into the through groove 2042-1 from the outside (or another through groove) through the passage 2046-1.
  • the opening / closing valve 2049 (2049-2) is opened, the opening / closing valve 2049 (2049-3) is closed, and a voltage is applied to the conductor films 2043-3 and 2043-4 to inflate the through groove 2042-2.
  • a voltage is applied to the conductor films 2043-1 and 2043-2 to dent the through groove 2042-1.
  • the on-off valve 2049-2 is closed, the on-off valve 2049-3 is opened, the on-off valve 2049-4 is closed, and a voltage is applied to the conductor films 2043-3 and 2043-4, thereby passing through the through groove 2042-2.
  • a voltage is applied to the conductor films 2043-5 and 2043-6 to expand the through groove 2042-3.
  • the gas or liquid that has entered the through groove 2042-2 is guided to the through groove 2042-3.
  • the movement of the substrate side wall 2041-3 is in the same direction by applying a voltage to these conductor films.
  • the opening / closing valve 2049-3 is closed, the opening / closing valve 2049-4 is opened, the opening / closing valve 2049-5 is closed, and a voltage is applied to the conductor films 2043-5 and 2043-6, thereby passing through the through groove 2042-3. And a voltage is applied to the conductor films 2043-7 and 2043-8 to expand the through groove 2042-5. As a result, the gas or liquid that has entered the through groove 2042-3 is guided to the through groove 2042-4. There is no problem because the movement of the substrate side wall 2041-4 is in the same direction by applying a voltage to these conductor films.
  • the opening / closing valve 2049-4 is closed, the opening / closing valve 2049-5 is opened, and a voltage is applied to the conductor films 2043-7 and 2043-8 to dent the through groove 2042-4, the through groove 2042
  • the gas or liquid contained in -4 goes out to the outside (or another through groove) through the passage 2046-3.
  • adjacent through grooves are connected by a passage, an open / close valve is provided between them, a voltage is applied to the electrode on the side wall of the substrate side wall, and the open / close valve is operated so as to interlock with the through groove. Since the liquid and gas inside can be moved, a very small pump can be made.
  • the operation of adjacent through grooves can be reversed only by applying a voltage to the side electrode on the side wall of the substrate (that is, if one is recessed, the other can be inflated). (And vice versa), the liquid or gas can be continuously moved in one direction.
  • a thin plate on which the passage has been prepared in advance may be attached to the substrate.
  • the passage in the thin plate can be opened with a laser, or the passage can be formed on the surface of one thin plate (A thin plate) and the other thin plate (B thin plate) can be bonded together. Or if a laser beam is used, a desired channel
  • the opening / closing valve may be disposed on the A thin plate and then the B thin plate may be attached thereto, and can be electrically controlled by wiring into the thin plate. Further, the open / close valve may be formed of a piezoelectric element.
  • FIG. 30B is a diagram showing another embodiment of the pump device.
  • Components having the same functions as those in FIG. 30A are given the same reference numerals, and when they are difficult to see in the figure, the reference numerals are omitted, so please also refer to FIG.
  • Through grooves (or through recesses) 2042 (2042-1, 2, 3, 4, 5, 6, 7) penetrating from the first surface to the second surface are formed in the piezoelectric substrate 2041, and these through grooves 2042 are formed.
  • a substrate side wall 2041 (2041-6, 7, 8, 9, 10, 11) is formed between (2042-1, 2, 3, 4, 5, 6, 7).
  • the substrate side wall facing the substrate side wall 2041-6 in the through groove 2042-1 is designated as 2041-1
  • the substrate side wall facing the substrate side wall 2041-11 in the through groove 2042-4 is designated as 2041-5.
  • a conductor film 2043 (2043-9, 10, 11,..., 21) is formed on the inner side surface of the through groove 2042 (2042-1, 2, 3, 4, 5, 6, 7), that is, the side surface of the substrate side wall.
  • an insulating film 2044 is further stacked thereon (this insulating film is omitted in FIG. 30B).
  • a first thin plate 2047 is attached to the first surface (upper surface or surface) of the piezoelectric substrate 2041.
  • a second thin plate 2048 is attached to the second surface (lower surface or back surface) of the piezoelectric substrate 2041.
  • a passage 2046 (2046-1) communicating with the outside (or another through groove) (not shown) is formed, and is connected to the through groove 2042 (2042-1).
  • a passage 2046 (2046-2) is formed in the first thin plate so as to communicate from the through groove 2042 (2042-2) to the through groove 2042 (2042-3).
  • a passage 2046 (2046-3) is formed in the first thin plate so as to communicate with the outside (or another through groove) (not shown) from the through groove 2042 (2042-4).
  • These passages 2046 (2046-1, 2, 3) may be provided with on-off valves 2049 (2049-1, 3, 5).
  • a passage 2045 (2045-1) is formed which leads from the through groove 2042 (2042-1) to the through groove 2042 (2042-2). Furthermore, a passage 2045 (204-2) that leads from the through groove 2042 (2042-3) to the through groove 2042 (2042-4) is formed inside the second thin plate 2048. These passages 2045 (2045-1, 2) may be provided with opening / closing valves 2049 (2049-2, 4).
  • the conductor films 2043 (2043-9, 10, 11,..., 21) formed on the side surface of the substrate side wall 2041 are respectively provided with lead-out wirings / electrodes so that voltages can be individually applied. ing.
  • the piezoelectric substrate side wall 2041 (2041-1, 5, 6, 7, 8, 9, 10, 11) can be deformed inside or outside the through groove. Therefore, when the direction in which the piezoelectric substrate side wall 2041 (2041-1, 5, 6, 7, 8, 9, 10, 11) is moved, the magnitude and polarity (plus or minus) of voltage application, and the timing match. Lead wires and electrodes can be connected. Usually, since the conductor films in the same through groove have the same size and the same polarity, the operation of one through groove is performed by alternately switching between positive and negative voltages (ie, alternating current application).
  • the substrate side wall dents or swells inside the through groove.
  • the on-off valve 2049 (2049-2) is closed, the on-off valve 2049 (2049-1) is opened, and a voltage is applied to the conductor films 2043-1 and 2043-10, 11 to expand the through groove 2042-1.
  • the medium liquid or gas
  • the medium can be sucked into the through groove 2042-1 from the outside (or another through groove) through the passage 2046-1.
  • the volume of the through groove 2042-5 between the through grooves 2042-1 and 2042-2 fluctuates, and the amount of the fluctuation is a communication hole 2040 (2040) with outside air opened in the first thin plate 2047.
  • the piezoelectric substrate side wall 2041 (2041-6) is deformed substantially in accordance with the voltage applied to the conductor film on the piezoelectric substrate side wall 2041 (2041-6).
  • the on-off valve 2049 (2049-2) is opened, the on-off valve 2049 (2049-1, 3) is closed, and a voltage is applied to the conductor films 2043-12, 13 and 2043-14, 15 to penetrate.
  • Groove 2042-2 is inflated.
  • a voltage is applied to the conductor films 2043-1 and 2043-10, 11 to dent the through groove 2042-1.
  • the volume of the through groove 2042-5 between the through grooves 2042-1 and 2042-2 fluctuates, and the amount of the fluctuation is a communication hole 2040 (2040) with the outside air opened in the first thin plate 2047.
  • the piezoelectric substrate side wall 2041 (2041-6, 7) is deformed substantially in accordance with the voltage applied to the conductor film on the piezoelectric substrate side wall 2041 (2041-6, 7).
  • the volume of the through groove 2042-6 between the through grooves 2042-2 and 2042-3 varies, but the variation is communicated with outside air 2040 (2040-) formed in the second thin plate 2048. 2) Since it goes in and out through, there is no pressure fluctuation of the through groove 2042-6, so the above change of the piezoelectric substrate side wall 2041 (2041-8) is not affected.
  • the piezoelectric substrate side wall 2041 (2041-8) is deformed substantially in accordance with the voltage applied to the conductor film on the piezoelectric substrate side wall 2041 (2041-8).
  • the gas or liquid contained in the through groove 2042-1 enters the through groove 2042-2 through the passage 2045-1.
  • the on-off valve 2049-2 is closed, the on-off valve 2049-3 is opened, the on-off valve 2049-4 is closed, and a voltage is applied to the conductor films 2043-12, 13 and 2043-14, 15 to penetrate.
  • the groove 2042-2 is depressed, and a voltage is applied to the conductor films 2043-16, 17 and 2043-18, 19 to expand the through groove 2042-3.
  • the volume of the through groove 2042-5 between the through grooves 2042-1 and 2042-2 fluctuates, and the amount of the fluctuation is a communication hole 2040 (2040) with outside air opened in the first thin plate 2047.
  • the change in the piezoelectric substrate side wall 2041 (2041-7) is not affected. Therefore, the piezoelectric substrate side wall 2041 (2041-7) is deformed substantially in accordance with the voltage applied to the conductor film on the piezoelectric substrate side wall 2041 (2041-7).
  • the through groove 2042-6 between the through grooves 2042-2 and 2042-3 varies in volume, but the variation is in communication holes 2040 (2040-) with outside air opened in the second thin plate 2048.
  • the piezoelectric substrate side wall 2041 (2041-8, 9) is deformed substantially in accordance with the voltage applied to the conductor film on the piezoelectric substrate side wall 2041 (2041-8, 9).
  • the through-groove 2042-7 between the through-grooves 2042-3 and 2042-4 varies in volume, and the variation is communicated with the outside air 2040 (2040-3) formed in the first thin plate 2047.
  • the pressure in the through groove 2042-7 does not change, and the change in the piezoelectric substrate side wall 2041 (2041-10) is not affected. Accordingly, the piezoelectric substrate side wall 2041 (2041-10) is deformed substantially in accordance with the voltage applied to the conductive film on the piezoelectric substrate side wall 2041 (2041-10). As a result, the gas or liquid that has entered the through groove 2042-2 is guided to the through groove 2042-3.
  • the on-off valve 2049-3 is closed, the on-off valve 2049-4 is opened, the on-off valve 2049-5 is closed, and a voltage is applied to the conductor films 2043-16, 17 and 2043-18, 19 to penetrate.
  • the groove 2042-3 is recessed, and a voltage is further applied to the conductor films 2043-20, 21 and 2043-22 to expand the through groove 2042-4.
  • the volume of the through-groove 2042-6 between the through-grooves 2042-2 and 2042-3 fluctuates, and the variation is communicated with the outside air opened in the second thin plate 2048 2040 (2040).
  • the piezoelectric substrate side wall 2041 (2041-9) is deformed substantially in accordance with the voltage applied to the conductor film on the piezoelectric substrate side wall 2041 (2041-9).
  • the through groove 2042-7 between the through grooves 2042-3 and 2042-4 varies in volume, but the variation is in communication holes 2040 (2040-) with the outside air opened in the first thin plate 2047. 3) Since it goes in and out through, there is no pressure fluctuation in the through groove 2042-7, so that it does not affect the change of the piezoelectric substrate side wall 2041 (2041-10, 11).
  • the piezoelectric substrate side wall 2041 (2041-10, 11) is deformed substantially in accordance with the voltage applied to the conductor film on the piezoelectric substrate side wall 2041 (2041-10, 11).
  • the through-groove 2042-7 between the through-grooves 2042-4 and 2042-5 varies in volume, and the variation is communicated with the outside air 2040 (2040-3) formed in the first thin plate 2047. ),
  • the pressure in the through groove 2042-7 does not change, and the change in the piezoelectric substrate side wall 2041 (2041-11) is not affected.
  • the piezoelectric substrate side wall 2041 (2041-11) is deformed substantially in accordance with the voltage applied to the conductor film on the piezoelectric substrate side wall 2041 (2041-11).
  • the gas or liquid that has entered the through groove 2042-3 is guided to the through groove 2042-4.
  • the on-off valve 2049-4 is closed, the on-off valve 2049-5 is opened, and a voltage is applied to the conductor films 2043-20, 21 and 2043-22 to dent the through groove 2042-4.
  • the gas or liquid that has entered the groove 2042-4 goes out to the outside (or another through groove) through the passage 2046-3.
  • the volume of the through-groove 2042-7 between the through-grooves 2042-3 and 2042-4 varies, but the variation is communicated with the outside air 2040 (2040) opened in the first thin plate 2047. -3), since there is no pressure fluctuation in the through groove 2042-7, the change in the piezoelectric substrate side wall 2041 (2041-11) is not affected.
  • the passage in the thin plate can be opened with a laser, or the passage can be formed on the surface of one thin plate (A thin plate) and the other thin plate (B thin plate) can be bonded together. Or if a laser beam is used, a desired channel
  • the opening / closing valve may be disposed on the A thin plate and then the B thin plate may be attached thereto, and can be electrically controlled by wiring into the thin plate. Further, the open / close valve may be formed of a piezoelectric element.
  • the passages connecting the through grooves shown in FIGS. 30A and 30B are alternately connected to the first thin plate and the second thin plate, but the first thin plate is considered in plan view.
  • a medium such as a liquid or a gas can be moved by providing a passage and a flat valve only in (or the second thin plate). (Refer to FIG. 34) Accordingly, the recess may not be a through groove as shown in FIG. 30 (a) or 30 (b).
  • the present invention can be used for a substrate that is not a piezoelectric substrate. That is, as described in various places so far, a plurality of recesses (including through grooves) are formed in the substrate, the first conductor film is formed on the substrate side wall between the adjacent recesses, and the piezoelectric film is formed thereon.
  • the pump device of the present invention can be produced by forming a body film and a second conductor film thereon. Alternatively, the pump device of the present invention can be manufactured only by pressure fluctuation without using a piezoelectric substrate or a piezoelectric film.
  • a pump device using pressure fluctuation can be realized with a structure similar to the structure shown in FIG.
  • the conductor film shown in FIG. An insulating film (as a protective film) may be provided on the side wall of the substrate.
  • the opening / closing valve 2049-1 is opened and the opening / closing valve 2049-2 is closed, and the pressure is released from the pressure transmission hole 2040-1, so that the through groove 2042- 5 (lower than the pressure of the through groove 2042-1), the substrate side wall 2041-6 is deformed to the through groove 2042-5 side to expand the through groove 2042-1, and the outside is passed through the passage 2046-1.
  • the medium liquid or gas
  • the on-off valve 2049-1 is closed and the on-off valve 2049-2 is opened, and pressure is applied from the pressure transmission hole 2040-1 to increase the pressure in the pressure fluctuation through groove 2042-5 (through groove 2042-1).
  • the substrate side wall 2041-6 is deformed to the side of the through groove 2042-1 to make the through groove 2042-1 concave, and the pressure is released from the pressure transmission hole 2040-2 to reduce the pressure in the through groove 2042-6.
  • the substrate side wall 2041-8 is deformed toward the through groove 2042-6 at a lower level (than the pressure of the through groove 2042-2)
  • the substrate side wall 2041-7 is deformed toward the through groove 2042-2.
  • the volume of the through-groove 2042-2 is not much changed by almost canceling both.
  • the medium in the through groove 2042-1 moves to the through groove 2042-2.
  • the medium can be moved.
  • the through groove for pushing out the medium can be recessed, and the through groove for introducing the medium can be expanded at the same time.
  • two pressure fluctuation through grooves 2042-5 (2042-5-1, 2) may be provided between the through groove 2042-1 and the through groove 2042-2 so that pressure can be applied separately.
  • the substrate 2041 is a piezoelectric substrate.
  • the piezoelectric substrate may be a piezoelectric film.
  • the substrate 2041 may be a substrate other than a piezoelectric material or a thick film, and in that case, a conductive film and a piezoelectric film may be formed on the side surface of the substrate side wall as described above.
  • the ink introduction holes 2019-2 and 2019-5 shown in FIG. 27A may be connected, and the ink discharge holes 2023-1 and 2023-2 may be connected.
  • FIG. 30 (c) is a diagram showing an embodiment of a minute liquid mixing container or gas mixing container using a recess or through groove of the present invention, and is a plan view parallel to the first surface of the substrate.
  • This embodiment is an application of the embodiment shown in FIG. FIG. 30 (c) shows a set of micro liquid (gas) mixing containers, but a large number of mixing containers can be formed side by side in the substrate.
  • a cylindrical through groove 2052 (2052-5) is formed at the center, and a cylindrical through groove 2052 (2052-4) surrounds the circumference.
  • a cylindrical substrate side wall 2051 (2051-5) surrounds the through groove 2052 (2052-4).
  • four sets of through grooves 2052 (2052-1, 2, 3), 2052 (2052-6, 7, 8), 2052 (2052-9, 10, 11), 2052 (2052-12, 13, 14) surrounds.
  • These four sets of through grooves 2052 (2052-1, 2, 3), 2052 (2052-6, 7, 8), 2052 (2052-9, 10, 11), 2052 (2052-12, 13, 14) are separated by substrate side walls 2051-3, 4, 5, 6.
  • the substrate side wall 2051 (2051-1) is an outer frame of the micro liquid (gas) mixing container of the present invention.
  • other through grooves 2052 are arranged on both sides of the through grooves 2052 (2052-1).
  • a substrate side wall 2051 (2051-4, 5) is formed between the through groove 2052 (2052-1) and the other through groove 2052 (2052-2, 3), and this substrate side wall 2051 (2051-4, 5) is deformed.
  • the other three sets of through grooves 2052 (2052-6, 7, 8), 2052 (2052-9, 10, 11), and 2052 (2052-12, 13, 14) have the same structure.
  • a first thin plate adheres to the first surface of these substrates 2051 as in the cross-sectional view of FIG. 30A, and a second thin plate adheres to the second surface of the substrate 2051. ing.
  • a liquid or gas passage 2053 (2053-1, 2) and a passage 2055 run in the same manner as shown in the sectional view of FIG. .
  • Each passage 2053 (2053-1, 2) and passage 2055 may be provided with opening / closing valves 2054 (2054-1, 2) and 2056.
  • the other three sets of through grooves 2052 (2052-6, 7, 8), 2052 (2052-9, 10, 11) and 2052 (2052-12, 13, 14) are also within the first thin plate or the second
  • a liquid or gas passage 2053 runs in the same manner as that shown in the cross-sectional view of FIG.
  • These passages 2053 may be provided with opening / closing valves.
  • One of the passages 2053 (2053-1) is connected to the outside or another through groove or the like.
  • a desired liquid or gas can be introduced.
  • the other of the passage 2053 (2053-1) communicates with the through groove 2052 (2052-1).
  • the passage 2053 (2053-2) enters the central cylindrical through groove 2052 (2052-5) from the through groove 2052 (2052-1).
  • the substrate side wall 2051 (2051-4, 5) can be recessed or expanded as described with reference to FIG.
  • liquid or gas is introduced into the cylindrical through groove 2052 (2052-5) from the through groove 2052 (2052-1) through the passage 2053 (2053-2).
  • Various liquids and gases are also introduced into the cylindrical through groove 2052 (2052-5) through the passage 2053 from the other three sets of through grooves.
  • the cylindrical through groove 2052 (2052-5) serves as a mixing container for these liquids and gases, and various liquids and gases can be mixed to produce various liquid mixtures and reaction liquids. Since the substrate side wall 2051 (2051-6) surrounding the cylindrical through groove 2052 (2052-5) can be deformed, when introducing liquid or the like into the cylindrical through groove 2052 (2052-5), the substrate side wall 2051 (2051-6) is inflated.
  • the mixed liquid and reaction liquid in the cylindrical through groove 2052 (2052-5) are recessed in the substrate side wall 2051 (2051-6) and discharged to the outside (or another through groove) through the passage 2055. At this time, it is effective to operate the opening / closing valve 2056.
  • the through grooves 2052 (2052- 1) can be recessed or recessed.
  • the substrate 2051 is a piezoelectric substrate, and a conductor is formed on the side surface of the deformable substrate side wall 2051 (2051-4, 5) or the like, or the deformable substrate side wall 2051 (2051-6) in the central portion. A film is formed, and an electric field is applied to the conductor films on both sides to deform the piezoelectric substrate side wall.
  • a piezoelectric film having electrodes and wirings on both sides of the substrate side wall is laminated, and an electric field is applied to the electrodes on both sides.
  • the substrate side wall is deformed (only one side is acceptable).
  • Four sets of through grooves 2052 (2052-1, 2, 3), 2052 (2052-6, 7, 8), 2052 (2052-9) surrounding the periphery of the cylindrical substrate side wall 2051 (2051-5). 10, 11) and 2052 (2052 (2052-12, 13, and 14) are places where the liquid and gas before mixing are primarily stored, and from here through the passage 2053 (2053-2) The amount of liquid charged into a certain cylindrical through groove 2052 (2052-5) is adjusted.
  • the pressure may be adjusted or the voltage applied to the conductor film may be adjusted.
  • the opening / closing valve 2054 (2054-2) is used, the liquid or gas can be introduced from each location by adjusting the deformation amount of the cylindrical through groove 2052 (2052-5). 2051-5), the four sets of through grooves on the outside can be omitted. In that case, further miniaturization of the minute liquid mixing container or gas mixing container of the present invention can be realized. Estimate how small these small liquid mixing containers or gas mixing containers can be. Of course, it is determined by how much liquid or gas is required, but it is estimated from the size that can be realized at present. For example, the central cylindrical through groove 2052 (2052-5) has an OK diameter of 20 ⁇ m.
  • the width of the surrounding substrate side wall 2051 can be 1 ⁇ m, but is 5 ⁇ m.
  • the width of the cylindrical through groove 2052 (2052-4) around it is 10 ⁇ m, and the cylindrical substrate side wall 2051 (2051-5) surrounding it is 10 ⁇ m so as not to be deformed.
  • the size so far is 70 ⁇ m in diameter.
  • the size of the outer rectangle is 25 ⁇ m on one side, and the substrate side wall of the outer wall is the package of this container, so it is 25 ⁇ m on one side. Therefore, the overall square shape is 170 ⁇ m.
  • a white paste is cut in the substrate to form a 200 ⁇ m square shape. In the case of a 6-inch substrate (150 mm diameter), about 400,000 mixing containers can be produced.
  • a very inexpensive mixing vessel or reaction vessel is made. Moreover, if the material and thickness can be optimized, the size can be further reduced. Note that the thickness of the substrate 2051 can be appropriately adjusted to 10 ⁇ m to 2000 ⁇ m, preferably 30 ⁇ m to 1000 ⁇ m, and more preferably 50 ⁇ m to 500 ⁇ m. If necessary, you can make it thinner or thicker.
  • the medium discharge device and the pump device of the present invention can also be mounted on a semiconductor substrate. If the substrate or chip on which the above-described medium discharge device or pump device is formed is attached to the semiconductor substrate or chip and necessary wiring is performed, the medium discharge device or pump device is formed using an IC or transistor separately formed on the semiconductor substrate. Can be activated. Alternatively, the medium discharge device and the pump device can be manufactured by attaching the substrate to the semiconductor substrate and performing the above-described process. Alternatively, if the medium discharge device or pump device is formed directly on the semiconductor substrate, the medium discharge device or pump device is operated by connecting the IC or transistor separately formed on the semiconductor substrate to the medium discharge device or pump device. Can do.
  • a polymer or ceramic can be laminated on a semiconductor substrate, and a medium discharge device or a pump device can be fabricated in these polymers or ceramics.
  • An IC or transistor and a medium discharge device separately formed on the semiconductor substrate In connection with the pump device, the medium discharge device and the pump device can be operated.
  • a concave portion or a through groove in the polymer or ceramic can be formed by using an imprint method to produce a medium discharge device or a pump device in the polymer or ceramic, and an IC formed separately on the semiconductor substrate.
  • the transistor can be connected to the medium discharge device or the pump device to operate the medium discharge device or the pump device.
  • the step of connection between the manufactured medium ejection device or pump device and the IC or transistor separately formed on the semiconductor substrate can be reduced.
  • the size can be reduced, and problems such as disconnection of the connection wiring of the connection portion can be prevented.
  • various tests using human blood can be performed easily and quickly at low cost. Blood is put into one through groove (for example, a little needle is pointed at the finger and a little inhaled), and a test reagent is put into the other through groove.
  • Blood is introduced into the central reaction vessel (this amount can be controlled very precisely), and various reagents are introduced into the central reaction vessel from another through groove. These can be mixed and reacted to see the results. In particular, if a transparent thin plate is used, it can be determined by microscopic observation (which will no longer be visible with the naked eye). Or you can shed light and know the result. It is an advantage of the present invention that the degree of freedom is high that a large number of outer through grooves can be manufactured.
  • a cylindrical through groove is provided at the center, but a rectangular through groove may be used as a mixing container, or any other arbitrary shape may be selected as appropriate. Further, the arrangement order is not required to arrange the mixing container in the center. However, it goes without saying that in one mounting form, a rectangular shape (rectangular or square) as shown in FIG. 30C is easy to form on the wafer and to be cut (diced).
  • FIG. 31 is a diagram showing the structure and manufacturing method of the acceleration sensor of the present invention.
  • the acceleration sensor of the present invention includes a concave portion side electrode portion 3001 having concave portions and a convex portion side electrode 3002 having convex portions as shown in FIGS. 31 (a) and 31 (b).
  • the structure and manufacturing method of the recess-side electrode unit 3001 will be described.
  • an insulating film 3012 is formed on a substrate 3011 such as a semiconductor, metal, or insulator.
  • a thick film 3013 is formed.
  • the thick film 3013 is preferably made of a material capable of forming a recess and having a small deformation of the formed recess in a normal use environment.
  • a material capable of forming a recess and having a small deformation of the formed recess in a normal use environment For example, polymers (PMMA (Polymethyl metacrylate), PC (Polycarbonate), PDMA (Polydimethylsiloxane), Certainly), insulators such as glass and ceramics, semiconductors such as silicon, carbon, gallium arsenide and gallium arsenide, or metals But it ’s okay.
  • a photosensitive film such as a photoresist is formed on the thick film 3013, the photosensitive film is patterned, and the thick film 3013 is etched using the patterned photosensitive film as a mask, so-called photolithography method and etching method are performed. In this manner, a recess 3017 (3017-1, 2, 3, 4) is formed in the thick film 3013.
  • An imprint method can also be used as a resist pattern forming method. For example, a resist forming mold is pressed against a resist film formed by applying a resist (not necessarily photosensitive) or adhering a sheet-like resist (not necessarily photosensitive). Form a pattern.
  • the thick film 3013 is etched to form a recess having a desired depth in the thick film 3013.
  • 3017 is formed. Since the side surface of the recess 3017 serves as one electrode of the capacitance element, it is formed as vertically as possible according to the resist mask pattern.
  • the shape of the side surface of the recess 3017 is usually a flat surface, but it may be a curved surface. When the shape of the side surface of the recess 3017 is a flat surface, a rectangular shape is easily formed.
  • the maximum value of the depth of the recess 3017 is determined by the thickness of the thick film (substrate) 3013, but it is desirable to optimize it according to the characteristics of the acceleration sensor element and the ease of formation. .
  • the depth can be 1 ⁇ m.
  • the thickness of the thick film (substrate) 3013 is increased, a deeper recess can be formed.
  • a thick film (substrate) 3013 having a thickness of 500 ⁇ m, a depth of 500 ⁇ m (in this case, penetrating) is possible.
  • a thick film (substrate) 3013 of 1000 ⁇ m a depth of 1000 ⁇ m (in this case, penetration) is possible.
  • Various substrates may be used as the thick film 3013. (In this case, it is better to refer to a substrate rather than a thick film.)
  • Various substrates are semiconductor substrates such as silicon, carbon, gallium arsenide, and gallium arsenide, or insulators such as glass, ceramic, and plastic.
  • a substrate or a metal substrate such as a metal or an alloy.
  • These substrates 3013 may be attached directly to the substrate 3011 or may be attached via an insulating film 3012.
  • the method of forming the recess in the substrate can be formed by the same method as described above. However, in order to simplify the process, the concave portion 3017 may be formed directly on the substrate 3011 without attaching the substrate 3013 to the substrate 3011.
  • the concave portion can be formed by the method described above.
  • the thick film 3013 can be formed by the following method, and the concave portion 3017 can be formed in the thick film 3013.
  • the polymer can be formed thick on the insulating film 3012 over the substrate 3011.
  • a method for forming the polymer 3013 there are a method of forming a coating film by a dropping method, a spin coating method, a screen printing method, or the like (coating method), and a method of attaching a polymer sheet material on the insulating film 3012 on the substrate 3011. .
  • a mold (mold) in which a pattern for forming a recess is formed in the coating film is pressed against the polymer 3013 with a certain pressure and heated to make the polymer soft.
  • the sheet material or the coating film is heated to soften the polymer, and a mold (mold) on which a recess forming pattern is formed is pressed against the softened polymer 3013 with a certain pressure.
  • a recess 3017 (3017-1, 2, 3, 4) is formed in the polymer 3013.
  • the recess 3017 can be formed in the polymer thick film 3013 by using the imprint method.
  • the polymer is a thermosetting polymer
  • a mold (die) on which a pattern for forming recesses is formed is pressed against the polymer 3013 as a coating film with a certain pressure, and then the polymer 3013 is heated in a pressed state. Heat and hold above the curing temperature of the thermosetting polymer.
  • recesses 3017 (3017-1, 2, 3, 4) are formed in the polymer 3013.
  • a mold in which a pattern for forming recesses is formed on the coating film is pressed against the polymer 3013 with a certain pressure, and light such as ultraviolet rays is applied to the mold die or the back side of the substrate 3011
  • the polymer 3013 is cured by irradiating the polymer 3013 with light through a mold or substrate 3011.
  • recesses 3017 (3017-1, 2, 3, 4) are formed in the polymer 3013.
  • the concave portion 3017 in the thick film 3013 can also be formed using ceramic or the like as the thick film 3013.
  • ceramic fine particles for example, alumina (Al 2 O 3) fine particles, aluminum nitride (AlN) fine particles, and silica (SiO 2) fine particles
  • alumina (Al 2 O 3) fine particles, aluminum nitride (AlN) fine particles, and silica (SiO 2) fine particles are applied on the insulating film 3012 on the substrate 3011 in a paste or gel form in a solvent.
  • Application is possible using a screen printing method, and if a mask is used, application can be made only at a desired location.
  • a mold (mold) on which a pattern for forming a recess is formed is pressed against the paste-like or gel-like coating film with a constant pressure.
  • a recess 3017 (3017-1, 2, 3, 4) is formed in the polymer 3013.
  • the in this way, the recess 3017 is formed in the ceramic thick film 3013 using the imprint method.
  • the concave portion 3017 in the thick film 3013 can also be formed using glass as the thick film 3013.
  • a thin glass plate is bonded onto the insulating film 3012 on the substrate 3011 in the region where the thick film 3013 is to be formed, and is softened by heating to a temperature equal to or higher than the glass transition temperature (Tg).
  • Tg glass transition temperature
  • molten glass is attached to the insulating film 3012 over the substrate 3011.
  • a mold (mold) on which a pattern for forming a recess is formed is pressed with a certain pressure into the softened glass or the melted glass. Thereafter, the temperature is lowered to Tg or lower to solidify the glass, and then the mold (mold) is peeled off.
  • the concave portion 3017 in the thick film 3013 can also be formed using a metal as the thick film 3013.
  • a thin metal plate is bonded onto the insulating film 3012 on the substrate 3011 in the region where the thick film 3013 is to be formed, and is heated or softened or melted at a temperature near or above the melting point (Tm) of the metal.
  • the molten metal is attached to the insulating film 3012 over the substrate 3011.
  • a mold (mold) in which a pattern for forming a recess is formed is pressed into the softened metal or molten metal with a constant pressure. Thereafter, the temperature is lowered to Tm or less to solidify the metal, and then the mold is removed.
  • an insulating film 3014 such as a silicon oxide film (SiOx) and a conductor film 3015 such as aluminum, copper, and silicide are formed on the pattern of the thick film 3013 in which the recesses 3017 are formed.
  • This insulating film 3014 is formed for the purpose of preventing conduction of current from the conductive film 3015 to the thick film 3013 and improving adhesion when the thick film 3013 is not a perfect insulator.
  • the thickness of the insulating film 3014 should be 100 nm to 500 nm in the recess.
  • the thickness of the conductor film 3015 is set such that 100 nm to 500 nm can be secured in the recess.
  • the conductor film 3015 is patterned, and the unnecessary conductor film 3015 is removed by etching.
  • This patterning is performed by applying a photoresist using a normal photolithography method or attaching a photosensitive sheet, leaving a photosensitive film in a necessary portion, and removing the conductive film 3015 in a portion where the photosensitive film is removed by etching. To do.
  • the conductor film 3015 in the recess 3017 is also etched as necessary.
  • the method of patterning the inside of the recess can be performed by the method described so far, and for example, an electrodeposition resist, a method using a sheet-like photosensitive film, an imprint method (see FIG. 24), and the like can be used.
  • an insulating film 3016 such as a silicon oxide film (SiOx) is stacked on the conductor film 3015.
  • the insulating film 3016 is a protective film for the conductor film 3015 and at the same time prevents a short circuit when the other electrode comes into contact.
  • the thickness of the insulating film 3016 is sufficient if it is 100 nm to 500 nm in the recess, but if the possibility of contact is high, the thickness is determined in consideration of the frequency.
  • the structure of the convex part side electrode part 3002 has a convex part 3024 (3024-1, 2, 3, 4) that enters the concave part 3017 (3017-1, 2, 3, 4) of the concave part side electrode part 3001,
  • the flat portion 3025 is combined with the flat portion (upper flat portion) of the concave portion side electrode portion 3001.
  • the substrate and film configuration of the convex portion side electrode portion 3002 are basically the same as those of the concave portion side electrode portion 3001.
  • An insulating film is formed on the convex side substrate 3021 and a thick film 3022 is formed thereon.
  • convex portions 3024 (3024-1, 2, 3, 4) that enter the concave portions 3017 (3017-1, 2, 3, 4) when combined with the concave portion side electrode portion 3001 are formed in the thick film 3022.
  • a method for forming the convex portion 3024 the same method as the method for forming the concave portion 3017 of the concave portion side electrode portion 3001 can be used.
  • the convex part 3024 of the convex part side electrode part 3002 has a smaller area than the convex part of the concave part side electrode part 3001.
  • the convex portion 3024 is formed by using a photolithography method (including a method of producing a resist pattern by an imprint method) and an etching method, or various imprint methods.
  • the thick film 3022 may be various types of substrates, and various substrates may be attached on the substrate 3021 of the convex portion side electrode portion 3002 or through an insulating film in the same manner as described in the concave portion side electrode portion 3001.
  • the protrusion 3024 is manufactured using a photolithographic method (including a method of manufacturing a resist pattern by an imprint method) and an etching method.
  • the convex portion 3024 may be formed directly on the substrate 3021 of the convex portion side electrode portion 3002.
  • an insulating film 3028 (described in FIGS. 31D and 31E) is formed on the thick film 3022 of the convex portion 3024 and the concave portion 3026 (3026-1, 2, 3, 4, 5), and A conductor film 3023 is formed.
  • the conductor film 3023 serves as the counter electrode / wiring of the electrode / wiring 3015 of the recess-side electrode portion 3001.
  • necessary patterning of the conductor film 3023 is performed.
  • the necessary patterning of the conductor film 3023 is patterning of electrodes / wirings so that a capacitor element for manufacturing an acceleration sensor is formed.
  • the protrusion 3024 deforms and changes in capacitance when subjected to acceleration, but the capacitance increases because the distance between the electrodes decreases on one side, but the capacitance increases because the distance between the electrodes increases on the other side. Therefore, if the connection is maintained as it is, the change in capacitance is canceled out. Therefore, it is necessary to prevent the conductor film 3023 on the two side surfaces to be the capacitor electrode of the recess 3026 from being connected. Therefore, as shown in FIGS. 31A and 31B, a part of the conductor film 3023 is removed by etching at the tip portion of the convex portion 3024 and the two side surfaces in the direction perpendicular to the paper surface.
  • a region 3029 (3029-1, 2, 3, 4) from which the conductor film 3023 is removed by etching is formed. Needless to say, part of the conductor film 3023 is removed by etching so as not to be connected even in a flat portion. Also, when there are two or more capacitive elements, electrodes that exhibit similar capacitance changes may be connected, but electrodes that exhibit different capacitance changes need not be connected.
  • an insulating film 3027 such as SiOx is formed. In FIGS. 31A and 31B, the insulating film 3027 is not shown but is shown in FIGS. 31D and 31E.
  • This insulating film 3027 also serves to prevent a short circuit due to contact with the conductor film 3015 which is a counter electrode. In the case where the insulating film 3016 has already been formed as the protective film for the conductor film 3015 and the short-circuit prevention film in the recess-side electrode portion 3001, this insulating film 3027 may be omitted when there is no need for short-circuiting or protection. .
  • the convex part 3024 of the convex part side electrode part 3002 has a shape smaller than that of the concave part 3017, and the side surface of the convex part 3024 is preferably parallel to the side surface of the concave part 3017.
  • the convex portion 3024 also enters the concave portion 3017 so that the side surfaces are parallel (substantially parallel).
  • the concave portion has a rectangular shape (rectangular column shape, which has a flat side surface), that is, the inner side surface of the concave portion has a rectangular column shape side surface and can have various shapes, and is opposed to this.
  • the convex portion can be inserted into the concave portion apart from the concave portion and can have various shapes other than the side surface of the rectangular column shape.
  • the concave portion has a polygonal shape (polygonal column shape, which has a flat side surface), that is, the concave portion.
  • the inner side surface of the can be a polygonal columnar side surface, and the convex portion facing it is inserted into the concave portion at a distance, and the polygonal shape (polygonal columnar shape), that is, the polygonal shape (polygonal shape)
  • the side of the column shape may be used.
  • the concave portion may have a curved surface shape (curved column shape, which has a curved side surface), that is, the inner side surface of the concave portion may be a curved columnar side surface, and the convex portion that faces the concave portion is also spaced apart in the concave portion.
  • the concave portion may have a curved surface shape (curved column shape, which has a curved side surface), that is, a curved surface (curved column shape) side surface.
  • the curved surface is a cylinder side surface or an elliptic cylinder side surface.
  • the concave portion side electrode portion 3001 and the convex portion side electrode portion 3002 are coupled.
  • the number of concave portions 3017 of the concave portion side electrode portion 3001 is larger than the size of the convex portions 3024 of the convex portion side electrode portion 3002, and the number of concave portions 3017 of the concave portion side electrode portion 3001 is equal to or greater than the number of convex portions 3024 of the convex portion side electrode portion 3002.
  • all the convex portions 3024 of the convex portion side electrode portion 3002 have a positional relationship such that they enter the concave portion 3017 of the concave portion side electrode portion 3001. It has become.
  • the concave portion side electrode portion 3001 and the convex portion side electrode portion 3002 are aligned so that the convex portion 3024 of the convex portion side electrode portion 3002 is disposed at a predetermined position of the concave portion 3017 of the concave portion side electrode portion 3001.
  • the concave portion side electrode portion 3001 and the convex portion side electrode portion 3002 are aligned while matching the alignment mark (may be a concave portion pattern) of the concave portion side electrode portion 3001 with the alignment mark (may be a convex portion pattern) of the convex portion side electrode portion 3002.
  • the convex portion 3024 (3024-1, 2, 3, 4) of the convex portion side electrode portion 3002 is put in the concave portion 3017 (3017-1, 2, 3, 4) of the concave portion side electrode portion 3001,
  • the flat part 3025 of the convex part side electrode part 3002 and the flat part 3018 of the concave part side electrode part 3001 are attached.
  • the alignment of the alignment marks can be performed with very high accuracy by alignment with, for example, transmitted light passing through the concave portion side electrode portion 3001 and / or the convex portion side electrode portion 3002. These flat portions can be attached via an adhesive 3026 as shown in FIG.
  • an adhesive is applied to the flat portion 3018 of the concave-side electrode portion 3001 (or the flat portion 3025 of the convex-side electrode portion 3002), and a screen printing method (a method of applying an adhesive only to a predetermined portion using a mask)
  • a dipping method (a method of dipping the flat portion 3018 of the concave portion side electrode portion 3001 in an adhesive solution, with the flat portion 3018 of the concave portion side electrode portion 3001 on the lower side, and an adhesive on the necessary portion of the flat portion 3018.
  • a method of attaching the adhesive sheet ⁇ adhesive sheet from which the concave region has been removed in advance is applied only to a predetermined portion of the flat portion 3018 of the concave portion side electrode portion 3001 (or the flat portion 3025 of the convex portion side electrode portion 3002).
  • the method of making it adhere, the adhesive sheet is made to adhere, and the recessed part area
  • a heat treatment is performed thereafter.
  • these flat portions can be attached by a room temperature bonding method or a high temperature pressure bonding method.
  • 31 (d) and 31 (e) are enlarged views of a part of the acceleration sensor of the present invention shown in FIGS. 31 (a) and 31 (b).
  • the basic structure of the acceleration sensor of the present invention is configured by the structure shown in FIGS. 31 (d) and 31 (e).
  • 31A and 31B do not show an insulating film having a film structure of the convex portion side electrode portion 3002, but FIGS. 31D and 31E show those insulating films 3027 and 3028. As shown in FIG.
  • the acceleration sensor of the present invention has a structure in which the convex portion 3024 of the convex portion side electrode portion 3002 enters the concave portion 3017 of the concave portion side electrode portion 3001, and the concave portion of the concave portion side electrode portion 3001. Since the upper surface of the side wall 3013 around 3017 is attached to the bottom surface around the convex portion 3024 of the convex portion side electrode portion 3002 by the adhesive 3026 or the like, the space of the concave portion 3017 is sealed. In this airtight space, the atmosphere space when the concave portion side electrode portion 3001 and the convex portion side electrode portion 3002 are coupled is substantially maintained.
  • FIG. 31C is a plan view of the states of FIGS. 31B, 31D, and 31E.
  • the convex portion 3024 has a rectangular parallelepiped shape (long side direction Ly, short side direction Wx, height Hz) and enters the rectangular parallelepiped concave portion 3017. When no force is applied, the long side of the rectangular parallelepiped shape is a concave portion.
  • the short side of the rectangular parallelepiped shape is substantially parallel to the short side of the recess 3017 and is separated by distances y1 (upper side) and y2 (lower side).
  • the bottom surface side of the rectangular parallelepiped shape is substantially parallel to the bottom surface side of the recess 3017 and is separated by a distance z1 (lower side).
  • the conductive film 3015 formed on the thick film 3013 on the side wall side and the bottom surface side of the concave portion 3017 is used as one electrode
  • the conductive film 3023 formed on the side surface and the bottom surface of the convex portion 3024 is used as the other electrode.
  • a capacitor 30 is formed with a space 3017 sandwiched between these electrodes as a capacitor space.
  • the acceleration sensor of the present invention is detected by this change in capacitance.
  • the convex portion 3024 receives a force in the x direction (short side direction)
  • the convex portion 3024 changes in the x direction (thickness of the convex portion 3024, that is, the thickness direction of the cantilever), but in the y direction (long side direction). Does not change. Further, even when the convex portion 3024 receives a force in the y direction (long side direction), the convex portion 3024 hardly changes in the y direction.
  • the convex portion 3024 since the convex portion 3024 hardly changes in the long side direction (the width of the convex portion 3024, that is, the width direction of the cantilever), the convex portion 3024 has an acceleration (force) depending on the amount of change in the x direction (short side direction).
  • the size can be determined.
  • the acceleration sensor of the present invention measures the magnitude of acceleration by detecting the change in capacitance of the recess 3017. That is, when the cantilever of the convex portion 3024 receives a force, the convex portion 3024 is displaced in the x direction, so that Cx1 and Cx2 change, and other capacitances Cy1, Cy2, and Cz1 hardly change.
  • C3017 Cx1 + Cx2 + C0 (C0 is a constant).
  • C3017 Cx1 + Cx2 + C0 (C0 is a constant).
  • the convex portion 3024 is not receiving force, that is, when the convex portion 3024 is stationary vertically downward, C3017 is the smallest, and when it is displaced to the left and right (in FIG. 31C), the capacitance C3017 increases. From this increase in capacity, the force or displacement can be known. Even if the change in capacitance is small, if a large number of one rectangular parallelepiped acceleration sensors shown in FIGS. 31 (d) and 31 (e) are arranged, the change in capacitance becomes large and can be detected with high accuracy.
  • the acceleration sensor of the present invention is that there is no need to pattern a thin film, particularly a conductor film (3015 or 3024) in this region, and it is sufficient that all layers are laminated as they are.
  • the contact and the lead electrode shown in FIG. 31 (c) may be formed on a flat portion (may be outside this region), so that a difficult problem does not occur in the process. In the case of the conventional method, it is difficult to pull out the lower electrode, and the process becomes complicated.
  • the process becomes much simpler than the conventional method.
  • the concave portion side electrode portion 3001 and the convex portion side electrode portion 3002 can be separately formed in parallel, and at the same time, since the substrate and the thin film (including thick film) configuration can be made the same, the process speed can be increased. However, because the process is fast and simple, the process cost can be greatly reduced.
  • capacitors Cx1 and Cx2 have the opposite relationship that when one increases, the other decreases. Since these are not connected, the capacity can be detected individually.
  • Cx1 increases and Cx2 decreases the force (acceleration) is acting on the convex portion 3024 on the negative side in the X direction (left side in FIGS. 31D and 31E).
  • Cx1 decreases and Cx2 increases the force (acceleration) is acting on the positive portion 3024 in the X direction (the right side in FIGS. 31D and 31E).
  • the direction of acceleration can also be known. Also.
  • the acceleration sensors of the present invention are arranged in the same direction, sensitivity to acceleration in that direction (x direction in FIGS. 31 (c) to (d)) increases, but in another direction, particularly in a right angle direction (FIG. 31 ( In c) to (d), the acceleration in the y direction) cannot be measured. Therefore, by arranging the acceleration sensor of the present invention whose orientation is changed by 90 degrees, inclined by 45 degrees, or inclined by a certain angle, or by arranging the concave and convex portions in a polygonal shape instead of a rectangular shape. The acceleration can be detected with respect to various directions by manufacturing the section and measuring the change in capacitance on each facing surface independently (wiring the electrodes independently). As shown in FIG.
  • a weight 3051 or 3052 having a specific gravity larger than that of the convex portion 3024 is attached to the tip portion (bottom surface portion) of the convex portion 3024 so that the convex portion 3024 serving as a cantilever increases sensitivity to acceleration. Just do it.
  • the weight 3051 is attached to the tip of the convex portion 3024 of the thick film 3022, and the weight 3052 is attached to the insulating film 3027 stacked on the tip of the convex portion 3024 of the thick film 3051.
  • weights 3051 and 3052 are formed by forming a convex portion 3024 on the thick film 3022 by imprint method, photolithography method + etching method, etc., and then attaching a weight substrate of the weight 3051 to the convex portion 3024 using an adhesive or the like.
  • this adhesive is applied to the weight substrate in advance or an adhesive sheet material is pasted, and the convex portion 3024 of the thick film 3022 of the convex portion side electrode portion 3002 is attached to the weight substrate, and then the adhesive is applied.
  • the weight substrate and the protrusion 3024 are firmly bonded by curing.
  • the tip of the convex part 3024 of the thick film 3022 of the convex part side electrode part 3002 is attached to the adhesive liquid, or a sheet material is attached, and the weight substrate is bonded via the adhesive or the adhesive sheet material attached only to the tip part. Then, there is a method in which the adhesive is cured and the weight substrate and the convex portion 3024 are firmly bonded. Next, the weight substrate in the region other than the weight 3051 attached to the tip of the convex portion 3024 is etched by a photolitho method and an etching method.
  • the convex portion side electrode portion 3002 on which the thick film 3022 on which the convex portion 3024 is formed is aligned with the convex portion 3024 formed on the substrate having the adhesive layer 3054 sandwiched in advance.
  • a weight 3051 is attached to the tip of 3024.
  • an adhesive is applied to the tip of the convex part 3024 or the upper part of the weight part 3051 to attach the weight 3051 to the tip part of the convex part 3024.
  • the weight 3051 can be formed at the tip of the convex portion 3024 by removing the adhesion between the adhesive layer and the weight portion 3051.
  • the adhesive between the weight part 3051 and the convex part 3024 is a thermosetting adhesive, and its curing temperature is T1.
  • the adhesive layer is a thermoplastic adhesive, and the softening temperature thereof, that is, the glass transition point Tg is higher than T1 (T1 ⁇ Tg).
  • the tip of the projection 3024 is dipped in a molten metal liquid (for example, solder) and attached, or the tip of the projection 3024 is immersed in a plating solution (for example, a plating solution for silver, solder, or copper). Then, a method of plating metal may be used. Further, when the weight 3052 is attached to the insulating film 3027 at the tip of the convex portion 3024, the same method as described above can be used.
  • These weights 3051 and 305302 may be any material having a heavier specific gravity than the material of the thick film 3022 serving as a cantilever.
  • the weights 3051 and 3052 If it is a metal such as iron (specific gravity 7.9), platinum (specific gravity 21.4), etc., it will be a sufficient weight. Thereafter, extraction electrodes on the convex side and the concave side are prepared.
  • a method for producing a convex electrode using an imprint method will be described.
  • a mold 3131 having a concave portion 3132 for forming a convex electrode pattern and a substrate 3141 to which a weight material 3133 is attached are prepared.
  • a convex pattern 3142 that can enter the concave portion 3122 of the mold 3131 is formed on the substrate 3141, and a weight material 3133 is attached to the tip of the convex pattern 3142 via an adhesive layer 3143.
  • the weight material is a material as described above having a specific gravity larger than that of the material constituting the convex electrode portion, but a material having a lower melting point (or softening point) than the material of the mold 3131 is desirable.
  • the mold material is quartz (melting point about 1600 ° C.) or silicon (melting point about 1410 ° C.), and the weight material is lead (melting point about 330 ° C.), aluminum (melting point about 660 ° C.), silver (about 962 ° C.), zinc ( About 420 ° C.), tin (about 232 ° C.), various solders and various alloys.
  • the substrate 3142 and the convex pattern 3142 are quartz, a silicon substrate, stainless steel, and various metal materials. Alternatively, a polymer material or ceramic material may be used.
  • the adhesive layer 3143 may be various adhesives, but is preferably a heat softening adhesive.
  • the softening point of the thermosoftening adhesive is preferably lower than the substrate 3141 and the convex member 3142.
  • a lower softening point is better from the viewpoint of energy and workability.
  • the weight material 3133 may be melted without using the adhesive layer 3143 and directly attached to the upper surface of the convex pattern 3142.
  • the substrate 3141 or the convex member 3142 may be provided with an electromagnet to attach the weight material 3133.
  • the weight material 3133 may be electrostatically adsorbed by generating static electricity at the tip of the convex pattern 3142.
  • the weight material 3133 may be vacuum-sucked by providing a vacuum line at the tip of the convex pattern 3142.
  • the weight material 3133 adhering to the upper surface of the convex pattern 3142 is inserted into the recess 3132 of the mold 3131, the adhesiveness of the adhesive layer 3143 is lost, and the weight material 3133 is placed in the recess 3132 of the mold 3131. Therefore, the size of the weight material 3133 must be smaller than the recess 3132.
  • the alignment of the concave portion 3132 and the convex member 3142 of the mold 3131 and the weight material 3133 attached thereto is accurate if the mold 3131 or the substrate 3141 is a material that transmits alignment light, and is aligned through the mold 3131 or the substrate 3141. Good alignment is possible.
  • the adhesiveness may be weakened by raising the temperature above the softening point.
  • the weight material 3133 may be melted and dropped into the recess 3132. After the weight material 3133 is disposed in the recess 3132, the weight material 3133 is melted at a temperature equal to or higher than the melting point of the weight, and the weight material is attached to the bottom of the recess 3132. ⁇ FIG. 32 (c) ⁇ Next, the mold 3131 is pressed against the liquid film or gel film of the thick film 3112 formed on the substrate 3111. ⁇ FIG.
  • the thick film 3112 is a thermosetting material
  • the thick film 3112 is cured by raising the temperature to a temperature at which the thick film 3112 is cured.
  • the temperature is raised to a temperature at which the thick film 3112 softens (softening point) or higher, and then the mold 3131 may be pressed (in this state, may be pressed) to a temperature below the softening point.
  • the thick film 3112 is cured.
  • light to be cured for example, ultraviolet rays or X-rays
  • the mold substrate 3131 or the substrate 3111 needs to be formed of a material that transmits curing light.
  • the mold 3131 is pulled away, as shown in FIG.
  • the weight material 3133 adheres to the upper surface of the thick film convex portion 3112 (3112-1, 2).
  • the lower part of the thick film convex part 3112 (3112-1, 2) can be side-etched to be easily deformed by acceleration.
  • the remaining film of the thick film 3112 is etched away by anisotropic whole surface etching using oxygen plasma.
  • the substrate 3111 under the film convex portion 3112 (3112-1, 2) can be side-etched to facilitate deformation by acceleration.
  • the convex portion 3112 (3112-1, 2) to which the weight material 3133 is attached can be manufactured by a very simple process.
  • FIG. 33A is a diagram showing a structure of a piezoelectric microphone using a recess and a manufacturing method thereof.
  • a recess 4062 is formed in the piezoelectric substrate 4061 by a photolithography method, an etching method, an imprint method, or the like.
  • a conductor film 4063 is formed on the substrate 4061 and on the inner surface of the recess 4062, and necessary conductor film 4063 is patterned.
  • One of the recesses 4062 4062 (4062-2) is a recess capable of receiving external vibration (also referred to as a vibration passive recess), and is adjacent to the recess 4062 (4062-2). 4062-3) is arranged.
  • the film 4063 (4063-2) is not connected to the conductor film 4063 (4063-1, 3) on the side of the adjacent recess 4062 (4062-1, 3).
  • the conductor film 4063 is formed with necessary wiring and electrodes.
  • An insulating film 4064 is formed over the conductor film 4063.
  • An insulating film 4064 is also formed on 4064 (4064-1, 2) on the substrate side wall 4061 (4061-1, 2) from which the conductor film 4063 has been removed by etching. This insulating film 4064 protects the conductor film 4063 and the recess 4062.
  • a thin plate 4066 is attached on the insulating film 4064 on the first surface (upper surface) of the substrate 4061, and portions other than the necessary portions are removed.
  • the thin plate 4066 may be removed after the thin plate 4066 is attached to the substrate 4061, or the thin plate 4066 removed in advance may be attached to the substrate 4061.
  • the vibration passive recess 4062 (4062-2) does not cover the thin plate 4066 so that a vibration wave can enter from the outside. (However, if a vibration wave enters, it is OK, so there may be a part that covers a part.
  • the vibration passive recess 4062 (4062-2) is also covered with a thin plate 4066, and only a part of the vibration wave is covered.
  • the recess 4062 (4062-1, 3) adjacent to the vibration recess 4062 (4062-2) is covered with a thin plate 4066 (40661-2). This serves to prevent vibration waves from entering from the outside.
  • a contact hole is formed in the insulating film 4064 at a necessary portion to provide an electrode pad, or a conductor film is formed in the contact hole to form a necessary electrode / Wiring can also be formed.
  • potential change extraction terminals from the conductor film 4063 (4063-1, 2, 3) are a, b, and c as shown in FIG.
  • the substrate side wall 4061 (4061-1, 2) vibrates due to air vibration (other gas vibration or liquid vibration) that has entered the vibration passive recess 4062 (4062-2).
  • Substrate side wall 4061 (4061-1, 2) is thin (depending on the substrate material, about 1 ⁇ m to 100 ⁇ m), and both sides thereof are space recesses 4062 (4062-1, 2, 3). (4061-1, 2) is a diaphragm.) When the substrate side wall 4061 (4061-1, 2) vibrates, the substrate side wall 4061 (4061-1, 2) is a piezoelectric body, so that the piezoelectric effect causes it. Charge is polarized on the side (surface). Therefore, the conductor films 4063 (4063-1) and 4063 (4063-2) or conductor films 4063 (4063-3) and 4063 (4063) formed on the side surfaces of the substrate side wall 4061 (4061-1, 2). -)).
  • the potential difference is taken out by terminal a and terminal b, and / or the potential difference is taken out by terminal a and terminal.
  • This potential difference changes depending on the magnitude of vibration, and the sign of the potential difference changes depending on the direction of vibration. That is, a device using a recess formed in a direction perpendicular to the substrate surface of the present invention can convert a vibration wave into an electric signal, and a so-called piezoelectric microphone can be manufactured.
  • FIG. 33 (c) to 33 (e) are plan views showing a cross-sectional view of the piezoelectric microphone shown in FIG. 33 (a).
  • FIG. 33 (c) rectangular recesses are arranged in parallel. That is, when viewed three-dimensionally, the rectangular parallelepiped recesses are arranged in parallel.
  • a substrate side wall 4061 (4061-1, 2) between the concave portions 4062 (4062-1, 2, 3) is a diaphragm. These substrate side walls 4061 (4061-1, 2) have a rectangular parallelepiped shape.
  • a conductor film 4063 is laminated in the recesses 4062 (4062-1, 2 and 3) and on the upper surface of the substrate 4061, and the upper portion of the substrate side wall 4061 (4061-1 and 2) and the first surface (upper surface) of the substrate 4061. Patterned above, it is divided into conductor films 4063 (4063-1, 2 and 3), and terminals a, b and c are connected to each other. Since the substrate side wall 4061 (4061-1, 2) is formed with the same width and the same depth, and the concave portion 4062 (4062-1, 3) is held at the same pressure, it is within the 4062 (4062-2). It vibrates in the same way with the introduced vibration wave.
  • FIG. 33 (e) is a diagram showing another planar shape, and a cylindrical substrate side wall 4061 (4061-1) surrounds a cylindrical vibration passive recess 4062 (4062-2), and these are further cylindrically shaped.
  • the concave portion 4062 (4062-1) is surrounded.
  • the conductor film 4063 (4063-1) covers the cylindrical recess 4062 (4062-1), and the conductor film 4063 (4063-2) covers the cylindrical recess 4062 (4062-2).
  • These conductor films 4063 (4063-1, 2) are cut at the upper part of the substrate side wall 4061 (4061-1) sandwiched between the recesses 4062-1 and 4062-2 and are not connected. Terminals a and b are connected to these conductor films 4063 (4063-1 and 2).
  • the recess 4062-1 is covered with a thin plate, but the recess 4062-2 is not covered with a thin plate.
  • the vibration wave enters the vibration passive recess 4062 (4062-2)
  • the entire cylindrical substrate side wall 4061-1 vibrates, and the conductor film electrode 4063 on both side surfaces of the substrate side wall 4061-1.
  • a potential difference is generated between 1 and 4063-2 (between terminals ab), and this potential difference changes corresponding to the vibration waveform.
  • a microphone with a cylindrical recess that is, a device that converts vibration waves into potential changes deforms the entire side wall of the substrate uniformly, so it is very efficient and produces a microphone element with a small area. it can.
  • a microphone having an elliptical recess is a microphone element having similar characteristics.
  • a microphone element having a concave portion and a substrate side wall having an arbitrary curved surface, particularly a curved surface capable of faithfully transmitting a vibration wave to the vibration of the substrate side wall may be used.
  • FIG. 33 (d) is a diagram showing a microphone element having another shape. That is, the vibration passive recess 4062 (4062-2) having a rectangular shape (square or rectangular) is further surrounded by a rectangular shape (square or rectangular) recess 4062 (4062-1). There are four side walls 4061 4061 (4061-1, 2, 3, 4). These four substrate side walls 4061 (4061-1, 2, 3, 4) serve as diaphragms. A conductor film 4063 (4063-2) is formed on the side surface of the substrate recess 4062 (4062-2), that is, the side surface of the substrate side wall 4061 (4061-1, 2, 3, 4) on the substrate recess 4062 (4062-2) side. It is formed continuously.
  • the conductor film 4063 (4063-1) is formed on the side surface of the substrate recess 4062 (4062-1) and on the side surface of the substrate sidewall 4061 (4061-1, 2, 3, 4) on the substrate recess 4062 (4062-1) side. Are formed continuously.
  • These conductor films 4063 (4063-1, 2) are put on top of the substrate side wall 4061 (4061-1, 2, 3, 4) to form conductor films 4063 (4063-1) and 4063 (4063-2). ) Is not connected. Terminals a and b are connected to the conductor films 4063 (4063-1) and 4063 (4063-2), respectively.
  • FIG. 33B is a diagram showing a structure and a manufacturing method of a microphone element in which a piezoelectric film is formed using a substrate that is not a piezoelectric substrate.
  • Recesses 4072 (4072-1, 2, 3) are formed in a substrate 4071 that is not a piezoelectric substrate.
  • the recess 4072 (4072-2) is a vibration passive recess.
  • a substrate sidewall 4071 (4071-1, 2) is formed between the recess 4072 (4072-1, 3) and the vibration passive recess 4072 (4072-2).
  • the substrate side wall 4071 (4071-1, 2) vibrates.
  • an insulating film 4073 is formed on the surface (first surface) of the substrate 4071 (including the inner surface of the recess 4072). When the substrate 4071 is an insulator, this insulating film is not necessarily formed.
  • a conductor film 4074 is formed over the insulating film 4073, and the conductor film 4074 is cut at 4075 (4075-1, 2) on the substrate side wall 4071 (4071-1, 2). At this time, necessary wiring patterning can be performed even on a flat portion (a portion other than the concave portion 4072) of the first surface of the substrate 4071.
  • the conductor film 4074 can be cut by ordinary photolithography and etching of the conductor film because there is no patterning in the recesses. When patterning in the recess, the electrodeposition resist method, the photosensitive film plasma polymerization method, the photosensitive dry film method, the photosensitive film sputtering method, and other methods can be used. Note that the conductor film 4074 can be cut by a laser.
  • a piezoelectric film 4076 is formed on the conductor film 4074.
  • the piezoelectric film 4076 is also formed on the portion from which the conductor film 4074 is removed, but there is no particular problem because the piezoelectric film 4076 basically has insulating properties.
  • the materials, manufacturing methods, manufacturing conditions, and the like of the insulating film 4073, the conductor film 4074, and the piezoelectric film 4076 are as described above.
  • the conductor film 4074 includes platinum (Pt), titanium (Ti), copper (Cu), gold (Au), nickel (Ni), chromium (Cr), iron (Fe), aluminum (Al), cobalt ( Co), palladium (Pd), tin (Sn), zinc (Zn), silver (Ag), and other metal films, alloys thereof, or oxide conductor films (ZnOx, InxOy, SnOx, GaxOy, CuAlxOy, CuGaxOy, CuInxOy, CuFexOy, NiOx, IrOx, SbSnxOy, InSnxOy, etc.), carbon-based conductive films such as graphene conductive films and carbon-based nanotube conductive films, conductive polymers, conductive polycrystalline silicon, conductive amorphous silicon, and the like.
  • the piezoelectric film 4076 for example PZT, LiTaO3, LiNbO3, La3Ga5SiO14, Li2B4O7, ZnO, GaPO4, PbPO3, BaTiO3, GaTiO3, KNbO3, LiTaO3, NaxWO3, BaNaNb5O5, Pb2KNb5O15, GaPO4, La3Ga5SiO14, Al 2 SiO 4 (F, OH ) 2 , AlPO 4 , KNaC 4 H 4 O 6 , Al 2 SiO 4 (F, OH) 2 , oxide-based piezoelectric films such as apatite, and piezoelectric polymers such as AlN, GaAs, and polyvinylidene fluoride.
  • a conductor film 4077 is formed over the piezoelectric body 4076, and necessary portions are removed by etching.
  • 4078 (4078-1, 2) on the substrate side wall 4071 (4071-1, 2) or a flat portion (a portion other than the concave portion 4072) of the first surface of the substrate 4071 is removed by etching.
  • the conductor film 4074 can be cut by a laser.
  • the patterning of the conductor film 4071 does not have to be performed in the recess, and can be performed by a normal photolithography method and an etching method.
  • the patterning of the conductor film 4071 is performed in the recess, it can be performed by an electrodeposition resist method, a photosensitive film plasma polymerization method, a photosensitive dry film method, a photosensitive film sputtering method, or other methods.
  • an insulating film 4079 is formed.
  • the thin plate 4081 is attached on the first surface of the substrate 4071. After removing unnecessary portions of the thin plate 4081, contact holes for extracting voltage from the conductor film 4074 and the conductor film 4077 are formed, and if necessary, electrode / wiring layers are formed.
  • the conductor film 4074 (4074-1, 2, 3) is the lower electrode of the piezoelectric film 4076, and the conductor film 4077 (4077-1, 2, 3) is the upper electrode of the piezoelectric film 4076.
  • the vibration wave is introduced into the vibration passive recess 4072 (4072-2), it is not covered with the thin plate 4081. (Of course, there is no problem if the thin plate 4081 covers a part of the vibration passive recess 4072 (4072-2) if a vibration wave enters.
  • a vibration introducing passage is provided in the thin plate, etc.
  • a thin plate 4081 (4081-1, 2). Since the concave portion 4072 (4072-1, 3) is a reference for the vibration passive concave portion 4072 (4072-2), in order to prevent the vibration wave from entering the concave portion 4072 (4072-1, 3), The thin plate 4081 (4081-1, 2) covers the recess 4072 (4072-1, 3).
  • the thin plate 4081 (4081-1, 2) may be partially open, or the thin plate 4081 (4081-1, 2). ) May not cover the recesses 4072 (4072-1, 3). That is, the pressure in the concave portion 4072 (4072-1, 3) should be kept as small as possible by the pressure in the vibration passive concave portion 4072 (4072-2).
  • the pressure in the vibration passive recess 4072 (4072-2) (or the liquid pressure when liquid is in the vibration passive recess 4072 (4072-2)).
  • the substrate side wall 4071 (4071-1, 3) Fluctuates, the substrate side wall 4071 (4071-1, 3) is displaced.
  • the piezoelectric film 4076 formed on the substrate side wall 4071 (4071-1, 3) is also displaced.
  • the piezoelectric film 4076 is displaced, charges are polarized on the surface of the piezoelectric film 4076. As a result, a potential difference (voltage) is generated between the conductor film 4074 (lower electrode) and the conductor film 4077 (upper electrode) formed on both sides of the piezoelectric film 4076.
  • a microphone device can be manufactured by using various substrates and forming a piezoelectric film on the substrate without using a piezoelectric substrate.
  • the substrate is a silicon substrate, it can be mounted together with elements such as an IC, a transistor, a resistor, and a capacitor.
  • the microphone device of the present invention and a calculation IC for calculating the potential generated by the microphone device into a waveform or converting it into sound can be mounted in one chip.
  • FIGS. 33 (c) to 33 (e) various planar shapes as shown in FIGS. 33 (c) to 33 (e) can be used.
  • the vibration passive recess shown in FIG. 33 can be formed on the back surface (second surface), and the recess surrounding the periphery can be formed on the front surface (first surface).
  • the microphone device shown in FIG. 33 can also be manufactured using a recess (that is, a through groove) penetrating from the first surface of the substrate to the second surface. For example, a second thin plate is attached to the back surface of the substrate, a through groove is formed, and then a microphone element is manufactured by the process shown in FIG.
  • a microphone can be manufactured by forming a polymer on a substrate and forming a recess (or a through groove) in the polymer. This method is useful when, for example, as described above, another device and the microphone element of the present invention are manufactured on the same substrate.
  • the microphone element can be manufactured by softening the polymer or forming a recess using an imprint method in a liquid or gel state.
  • the concave portion for arranging the microphone element is formed in the substrate, and the concave portion for the microphone element is formed in the concave portion by embedding with the polymer, the level of the surface of the microphone element and the surface of the substrate can be substantially the same. Therefore, the conductor film used for the microphone element can be used also as the conductor film in the other substrate, and connection is facilitated even when not used (the step of the connection wiring is reduced or the connection is made by wire bonding). In this case, the step becomes smaller).
  • the microphone device shown above uses a substrate sidewall sandwiched by a recess formed from the first surface of the substrate toward the second surface side or a through groove penetrating from the first surface of the substrate to the second surface side, Although it converts external vibration waves into electrical signals, it can also function as a speaker if viewed in reverse. For example, if an electrical signal is applied to the upper and lower electrodes (conductor film) sandwiching the piezoelectric film, or the upper and lower electrodes (conductor film) sandwiching the piezoelectric substrate, the piezoelectric film vibrates and the substrate sidewalls accordingly. Vibrates, or the piezoelectric substrate generates vibration waves such as a vibrator and sound in the vibration passive recess.
  • the present invention can function as an acoustic transducer that can be a microphone or a speaker. Moreover, it can be used as a sound generating element or a sound buzzer other than a speaker. In particular, it is very small and can be manufactured inexpensively.
  • FIG. 34 is a diagram showing a heat exchanger to which the present invention is applied.
  • FIG. 34A is a plan view parallel to the substrate surface of the substrate 4083.
  • a heat medium flow path 4088 (4088-1, 4088-2) is formed in the substrate 4083, and heat exchange is performed with the substrate side wall 4083 (4083-2, 3, 4, 5) interposed therebetween.
  • a medium flow path 4086 (4086-1, 4086-2, 4086-3) is disposed.
  • the heat medium 4095 enters from the medium ports 4091 (4091-1, 4091-3) which are the inlets of the heat medium flow paths 4088 (4088-1, 4088-2), and the heat medium flow paths 4088 (4088-1, 4088-2).
  • FIG. 34B is a cross-sectional view perpendicular to the substrate surface at A1-A2 in the plan view 34A.
  • a first recess (or first through groove) 4088 (4088-1, 2) and a second recess (or second through groove) 4086 (4086-1, 2, 3) in the substrate 4083 perpendicular to the substrate surface. ) Is formed.
  • a substrate sidewall 4083 (2, 3, 4, 5) is formed between the first recess 4088 and the second recess 4086, and separates the first recess 4088 and the second recess 4086.
  • the first recess 4088 is a heat medium flow path
  • the second recess 4086 is a heat exchange medium flow path 4086.
  • a thin plate 4084 is attached to the first surface of the substrate 4083, which is the opening side of the first recess 4088 and the second recess 4086, and covers the openings of the first recess 4088 and the second recess 4086.
  • the thin plate 4084 adheres to the second surface of the substrate 4083, and the through holes of the first recess 4088 and the second recess 4086 pass through. It is blocking.
  • the heat medium flowing through the heat medium flow path 4088 The heat of 4095 is quickly transferred to the heat exchange medium 4096 flowing (entering) through the heat exchange medium flow path 4086 through the substrate side wall 4083 (2, 3, 4, 5).
  • the heat medium flow path 4088 flows in a thin and winding manner, the heat exchange medium 4096 surrounds the heat medium flow path 4088, and the contact area between the heat medium flow path 4088 and the heat exchange medium flow path 4086. Is very large, the heat of the heat medium 4095 is transferred to the heat exchange medium 4096 particularly quickly.
  • the substrate 4083 is a good thermal conductor, heat moves more quickly.
  • the substrate 4083 is carbon (including carbon nanotubes, fullerenes, and the like), aluminum nitride (AlN), metal (for example, silver, gold, copper, and aluminum), and a semiconductor substrate (for example, silicon).
  • the heat medium 4095 enters the heat medium flow path 4088 through the conduits 4089-1 and 4089-2 connected to the inlets (medium ports) 4091-1 and 4091-3 opened to the thin plate 4084, and after the heat exchange, the outlet (medium port) 4091-4 and 4091-6 are exited, the heat is exchanged outside the exchanger, and then returned to the conduits 4089-1 and 4089-2 for circulation.
  • the heat exchange medium 4096 enters the heat exchange medium flow path 4086 from the conduit 4087 connected to the inlet 4091-2 opened in the thin plate 4084, and after the heat exchange, the outlet 4091-5 The heat is exchanged outside the exchanger, and heat is exchanged outside the exchanger to be returned to the conduit 4087 for circulation.
  • the heat medium 4095 is a gas, liquid, or a coexistence medium of gas and liquid. For example, the medium evaporates from an external heat source such as a heat pipe to become a gas.
  • a series of phase changes in which the gas enters the heat medium flow path 4088, exchanges heat, condenses, becomes a liquid, and exits from the outlet can be continuously generated, so that heat transfer can be performed quickly.
  • the heat exchange medium 4096 is also a gas, liquid, or a coexistence medium of gas and liquid, which can also adopt the heat pipe method, enters the heat exchange medium flow path 4086 with the cooled liquid, and enters the heat exchange medium flow path 4086 with the heat medium.
  • a series of phase changes in which heat is evaporated from 4095 to evaporate into a gas and exit from the outlet to the outside can be continuously generated, so that heat transfer can be performed quickly.
  • the present invention can be applied to a semiconductor process, a very fine capillary-like flow path can be formed, and a free curved flow path can be formed, so that highly efficient heat transfer can be performed.
  • this heat exchange system can be manufactured by a very simple process and can be manufactured by a very small chip, so that it can be manufactured in large quantities and at a low cost. The manufacturing method is the same as before.
  • FIG. 35 is a diagram showing a method of forming a concave pattern of the present invention using an imprint method. The part which overlaps with the description so far is omitted as much as possible.
  • a polymer layer 712 is formed on the first substrate 711.
  • the polymer in this embodiment is heat softening (thermoplastic).
  • the polymer layer 712 is formed by dropping a solution in which a polymer is dissolved in a solvent onto the first substrate 711 (drop method) or by spin-coating a solution in which the polymer is dissolved in a solvent on the first substrate ( It is formed on the first substrate 711 by a coating method such as a spin coating method. Thereafter, as shown in FIG.
  • a mold 713 having a concave (second concave) pattern is inserted into the polymer layer 712, and then heat-treated at a temperature higher than the softening temperature to completely evaporate the solvent. Softens or melts.
  • the polymer layer 712 Prior to inserting the mold 713 into the polymer layer 712, the polymer layer 712 may be pre-baked.
  • the solvent may be completely evaporated, and the mold 713 may be inserted after the polymer layer is softened or melted by heat treatment at a softening temperature or higher.
  • the polymer is pasty, the polymer layer 712 may be formed on the first substrate 711 by a screen printing method, and the mold 713 may be inserted into the pasty polymer layer 712.
  • a polymer sheet is attached on the first substrate 711 and heat-treated at a softening temperature or higher to soften or melt the polymer layer to form the polymer layer 712 on the first substrate 711, and the softened or melted polymer layer 712
  • a mold 713 may be inserted into the. After the mold 713 is inserted into the polymer layer 712, the first substrate 711 is separated from the polymer layer 712 by performing a heat treatment at a temperature higher than the softening temperature to soften or melt the polymer layer. Alternatively, after the polymer layer is softened or melted, the polymer layer 712 is solidified at a temperature equal to or lower than the softening temperature, and then the first substrate 711 is separated.
  • the molds 713 and 716 are fixed at predetermined positions and held below the softening temperature to solidify the polymer 712 and determine the shape of the polymer 612. Thereafter, since the molds 713 and 715 are separated from the polymer layer 712, the convex portions 715-1 and 715-2 of the mold 715 are concave portions (first concave portions) on the main surface (first surface, surface) side of the polymer layer 712. Thus, the convex portions 713-1 and 713-2 of the mold 713 become concave portions (second concave portions) on the sub-surface (second surface, back surface) side of the polymer layer 712.
  • the substrate side walls 712-S1, 712-S2, 712-S3 between the convex portions 713 (713-1, 2) of the mold 713 and the convex portions 715 (715-1, 2) of the mold 715 are diaphragms, Side wall thickness (distance between convex part of mold 713 and convex part of mold 715) s1, s2, etc.
  • the distance t1 between the convex portion (for example, 713-1) of the mold 713 and the concave portion (for example, 716-1) of the mold 715 or the convex portion (for example, 715-1) of the mold 715 is made constant with respect to the mold 713.
  • the current alignment accuracy is 50 nm to 300 nm with s1 and s2 variations of 3 ⁇ , and the accuracy of t1 and b1 is 3 ⁇ 100 nm to 500 nm with variations, so that a highly accurate diaphragm can be manufactured.
  • the thickness of the polymer layer is about 1 ⁇ m to 2000 ⁇ m, and the width of the recess is about 1 ⁇ m to 3000 ⁇ m. The thickness and width may be larger.
  • a mold release agent may be applied to the surface of the mold 715 so that the mold 715 can be easily separated from the polymer layer 712.
  • the polymer layer 712 is supported by the mold 713 and thus does not deform. Thereafter, various films can be laminated using various processes described so far, and a desired laminated film structure can be obtained by etching.
  • the polymer layer 712 is a piezoelectric body
  • the first concave portion 720 (720-1, 2) which is a trace of the convex portion 715 (715-1, 2) of the mold 715 is formed.
  • a conductor film 717 is laminated on the polymer layer 712, and the desired patterning of the conductor film 717 is performed.

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