WO2013111419A1 - Appareil de capture d'image à semi-conducteurs - Google Patents

Appareil de capture d'image à semi-conducteurs Download PDF

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Publication number
WO2013111419A1
WO2013111419A1 PCT/JP2012/078982 JP2012078982W WO2013111419A1 WO 2013111419 A1 WO2013111419 A1 WO 2013111419A1 JP 2012078982 W JP2012078982 W JP 2012078982W WO 2013111419 A1 WO2013111419 A1 WO 2013111419A1
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WIPO (PCT)
Prior art keywords
light
color filter
solid
light shielding
state imaging
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PCT/JP2012/078982
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English (en)
Japanese (ja)
Inventor
大輔 舩尾
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シャープ株式会社
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Publication of WO2013111419A1 publication Critical patent/WO2013111419A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a solid-state imaging device that captures an image by photoelectrically converting image light from a subject, and more particularly to a solid-state imaging device that suppresses the generation of stray light and reduces flare and ghost.
  • solid-state imaging devices equipped with CCD-type or CMOS-type solid-state imaging devices are widely used.
  • a light-shielding metal serving as a black reference and a light-shielding metal for preventing light from entering the peripheral circuit are provided.
  • stray light enters the light receiving pixel due to reflection, causing flare and ghost (see FIG. 16).
  • a light shielding portion is formed in the peripheral portion of the protective glass covering the solid-state imaging device, and a bonding pad is disposed outside the light shielding portion, thereby preventing the light from the outside of the light receiving portion. It is said that the reflected light can be prevented from entering the light receiving part.
  • Such a light-shielding part needs to be aligned with the light-receiving part accurately in order to prevent intrusion of stray light.
  • a light-shielding portion is installed in a form that is fixed to a package or a module, and it is difficult to accurately align the alignment.
  • Patent Document 1 no light shielding metal is provided.
  • a light shielding metal is provided, if there is a gap between the light shielding metal and the light shielding part, the reflected light is transmitted to the light receiving part through the gap. There is a risk of flare and ghosting. Even if the alignment of the light-shielding part and the light-receiving part is exactly the same, flare and ghost can occur.
  • an object of the present invention is to provide a solid-state imaging device capable of reliably suppressing flare and ghost.
  • a solid-state imaging device includes a light receiving pixel area formed by arranging a plurality of pixels that are not shielded from light, a light shielding metal that covers an outer periphery of the light receiving pixel area, Above, at least above the light-shielding metal, a color filter layer formed by laminating one or more color filters above the boundary part on the outer peripheral part side of at least the light receiving pixel area and the outer peripheral part, A light-shielding portion disposed in a layer above the color filter layer so that a part thereof overlaps with the color filter layer when viewed from above, As viewed from above, the entire surface of the light shielding metal is covered with at least one of the color filter layer and the light shielding portion.
  • At least one color filter layer as a light absorbing material is formed above the light shielding metal that covers the outer periphery of the light receiving pixel area (the region where the light shielding pixels or peripheral circuits are formed).
  • the light shielding portion and the color filter are formed so that the light shielding portion overlaps with the color filter layer when viewed from above, and as a result, all regions of the light shielding metal are covered with at least one of the light shielding portion and the color filter layer.
  • Layers are arranged.
  • the color filter layer as the light absorbing material is formed above the light shielding metal, the reflection from the light shielding metal can be suppressed, and the occurrence of flare and ghost can be suppressed.
  • the light shielding portion and the color filter layer have an overlapping portion, it is not necessary to strictly position the light shielding portion, and there is a margin in alignment accuracy.
  • the color filter layer can be formed in the manufacturing process of the solid-state imaging device, and the alignment accuracy can be easily increased so that the light shielding metal is not exposed above the boundary pixels.
  • the color filter layer is formed at least above the light shielding metal and above the boundary portion on the outer peripheral side between the light receiving pixel area and the outer peripheral portion.
  • a light shielding metal is not formed above each pixel in the light receiving pixel area (hereinafter referred to as “light receiving pixel” as appropriate), but for each light receiving pixel, a color filter corresponding to one of red, green, and blue is provided. It is formed. That is, such a color filter layer is formed so as to extend from the light receiving pixel area toward the outer peripheral portion when combined with the color filter formed in the light receiving pixel area.
  • the light shielding metal is also formed at the boundary between adjacent light receiving pixels.
  • the light shielding metal refers to a light shielding metal that covers the light shielding pixels and peripheral circuits unless otherwise specified. I will do it. Since light must be incident on the photodiode in the light receiving pixel, if a light shielding metal is formed on the light receiving pixel, the photodiode portion has an opening. In this case, it is possible to either form the color filter above the light shielding metal on the boundary between the light receiving pixels or not.
  • the light shielding metal does not need to completely cover the light shielding pixel or the peripheral circuit, and there may be a gap (opening) in the light shielding metal, or the light shielding metal may be used as a part of the wiring. If the wiring pitch is sufficiently short with respect to the wavelength of light, the light is reflected at a considerable rate, so that an effect similar to that of completely covering is obtained.
  • the color filter layer above the light shielding metal is formed in a laminated structure in which two or more color filters having different transmission colors are laminated in at least a partial region.
  • the combination of the color filters to be laminated includes three types of red and green, green and blue, and red and blue. Of these, the combination of red and blue is This is most preferable because the wavelength distribution of the transmittance does not overlap.
  • the color filter layer has a single-layer stacked structure of the color filter above the boundary portion .
  • the height of the planarizing film formed on the color filter layer upper layer increases from the outer periphery toward the light receiving pixel area. It changes continuously, and it becomes easy to form a microlens on the planarizing film above the light receiving pixel area.
  • the color filter of the light-shielding pixel formed at the boundary portion on the outer peripheral side is composed of only one layer that is the same as the light-receiving pixel.
  • the solid-state imaging device having the above characteristics further includes:
  • the outer peripheral portion includes a light-shielded pixel area that is arranged adjacent to the light-receiving pixel area and includes a plurality of light-shielded pixels.
  • the planar shape and color arrangement of the color filter formed in the lowermost layer of the color filter layer are It is preferable that the planar shape and color arrangement layout of the color filter formed above the light receiving pixels adjacent to the boundary pixels are the same.
  • the solid-state imaging device having the above characteristics further includes:
  • the outer peripheral portion includes a light-shielded pixel area that is arranged adjacent to the light-receiving pixel area and includes a plurality of light-shielded pixels. It is preferable that the position of the upper surface of the color filter formed in the lowermost layer of the color filter layer continuously changes from the end of the light receiving pixel area toward the light shielding pixel area.
  • a light shielding metal is formed above the pixel, so a step may occur in the underlying layer on which the color filter is formed.
  • the light receiving pixel and the light shielding pixel adjacent to the boundary may not be uniform. Therefore, it is preferable that the base layer is flattened so that no step is generated in the base layer.
  • the planar shape and color arrangement layout of the color filter at the boundary pixel is the same as that of the light receiving pixel, and the upper surface position of the color filter changes continuously across the boundary, thereby flattening.
  • the uniformity of the optical characteristics can be maintained as much as possible while simplifying the process.
  • the color filter layer is formed by laminating the color filter having at least one black layer. At this time, only one black color filter may be formed to form a single color filter layer.
  • the light can be efficiently emitted. Can be absorbed, and reflection from the light shielding metal can be suppressed.
  • an antireflection film having a low refractive index is preferably formed above the color filter layer.
  • the antireflection film is further formed by extending an antireflection film formed on a microlens formed above the light receiving pixels in the light receiving pixel area to the outer peripheral side. It is preferred that
  • the antireflection film By configuring the antireflection film in this way, reflection that occurs when light enters the color filter layer or the planarizing film formed on the upper surface of the color filter layer is suppressed, and light is reliably absorbed in the color filter layer. Can be made.
  • the refractive index of such an antireflection film is preferably 1.5 or less.
  • such an antireflection film can be formed by the same process by extending the antireflection film on the microlens of the light receiving pixel and above the color filter layer, thereby reducing the number of manufacturing steps. However, since the antireflection film formed on the microlens of the light receiving pixel has a low absorption coefficient, the antireflection effect can be enhanced by forming it separately from the antireflection film above the color filter layer.
  • a peripheral circuit is formed on the outer periphery, and the entire surface of the peripheral circuit is covered with the light shielding metal.
  • the area of the overlapping portion between the light shielding portion and the color filter layer is more than half the area of the portion where the color filter layer is formed above the light shielding metal. preferable.
  • the light-shielding part can achieve higher light-shielding performance and absorption performance than the color filter layer formed above the light-shielding metal, the light-shielding part covers more than half the area of the color filter layer. And absorption performance can be obtained.
  • the light-shielding portion covers a mark representing the light-shielding metal, the color filter alignment mark, or the color filter mask.
  • the light shielding portion further covers a wire bonding pad and a wiring.
  • pads and wiring for wire bonding are sealed with resin, but reflection can be suppressed by covering the resin with a light shielding portion.
  • the color filter layer as the light absorbing material and the light shielding part are arranged above the light shielding metal so as to overlap when viewed from above, thereby suppressing reflection from the light shielding metal.
  • 1 is a schematic cross-sectional view showing an example of the structure of a solid-state imaging device according to an embodiment of the present invention.
  • the figure which shows an example of the planar layout of arrangement
  • 1 is a schematic cross-sectional view showing an example of a structure of a solid-state imaging device in which a light shielding member is arranged on a support plate in an embodiment of the present invention.
  • 1 is a schematic cross-sectional view showing an example of a structure of a solid-state imaging device configured so that a fixing member covers a partial region of a light shielding metal in an embodiment of the present invention.
  • 1 is a schematic cross-sectional view illustrating an example of a structure of a solid-state imaging device in which a color filter on a light shielding metal is configured by two layers in an embodiment of the present invention.
  • 1 is a schematic cross-sectional view illustrating an example of a structure of a solid-state imaging device in which a color filter on a light shielding metal is configured by two layers in an embodiment of the present invention.
  • 1 is a schematic cross-sectional view illustrating an example of a structure of a solid-state imaging device including a black filter in a color filter layer in an embodiment of the present invention.
  • 1 is a schematic cross-sectional view showing an example of the structure of a solid-state imaging device in which an antireflection film is formed above a color filter layer in an embodiment of the present invention.
  • 1 is a schematic cross-sectional view showing an example of the structure of a solid-state imaging device in which an antireflection film is formed above a color filter layer in an embodiment of the present invention.
  • 1 is a schematic cross-sectional view illustrating an example of a structure of a solid-state imaging device in which a color filter is disposed in the vicinity of a light-shielding pixel adjacent to a light-receiving pixel area with a color arrangement layout similar to that of the light-receiving pixel area in an embodiment of the present invention.
  • FIG. 1 is a schematic cross-sectional view showing an example of the structure of a solid-state imaging device when an underlying layer is not flattened in an embodiment of the present invention.
  • a planar layout diagram showing an example of the arrangement of the light shielding portion and the color filter layer and an example of the state of wire bonding 1 is a schematic cross-sectional view showing an example of a state of packaging by wire bonding in a solid-state imaging device according to an embodiment of the present invention.
  • Sectional schematic diagram which shows the other example of the structure of the solid-state imaging device which concerns on one Embodiment of this invention.
  • FIG. 1 is a cross-sectional view schematically showing the structure of a solid-state imaging device 1 according to an embodiment of the present invention.
  • the main parts are emphasized and the dimensional ratios such as the thicknesses and lengths of the constituent members may not necessarily match the actual dimensional ratios.
  • the drawings shown below exemplify the minimum components necessary for the description of the present invention, and various members such as a lens and an infrared cut filter may be added when packaging and modularizing. However, it is omitted in the illustration.
  • an area that is not close to the light shielding pixel area is not illustrated.
  • the solid-state imaging device 1 includes a light shielding metal 12, a base layer 13, color filters 14, 15 a, 15 b, 15 c (not shown), and a planarizing film 16 on a semiconductor substrate 11 on which a solid-state imaging device and its peripheral circuits are formed.
  • the microlens 17 is formed to form a solid-state image pickup device chip, the solid-state image pickup device chip is fixed on the package substrate 21, and the light shielding member (light shielding portion) 22 is connected to the package substrate 21 via the fixing member 23. Is configured to be fixed. Light enters the semiconductor substrate 11 from the side where the microlenses 17 are present.
  • the light shielding metal 12 covers the entire surface of the light shielding pixel (light shielding pixel area) of the solid-state imaging device and the peripheral circuit formation region 31 in the semiconductor substrate 11. Is formed.
  • the light-shielding metal has high reflectivity, and when directly exposed to light, the reflected light becomes stray light, causing flare and ghost.
  • peripheral circuits such as a circuit that performs signal processing and a control circuit that controls driving of the light receiving pixels and the light shielding pixels.
  • a layer (color filter layer) composed of the color filter 14 for absorbing light is formed on the transparent base layer 13 above a part of the formation region of the light shielding metal 12.
  • a layer composed of the color filters 15 a to 15 c is also formed on the base layer 13 above the formation region 32 of the light receiving pixels (light receiving pixel areas) of the solid-state imaging device in the substrate 11.
  • Each of the color filters 15a to 15c corresponds to any of the three types of red, green, and blue color filters, and is formed with a certain color arrangement layout for each light receiving pixel in order to separate light for each wavelength.
  • the color filter 15c is not shown because it is not on the cross-sectional view of FIG. 1, but may be present on another cross-sectional view having a different position in the direction perpendicular to the paper surface.
  • the underlayer 13 is, for example, a silicon nitride film, an acrylic resin, or a silicon oxide film.
  • the color filter layer formed above the light shielding metal 12 is formed at least above the boundary portion on the outer peripheral side between the light receiving pixel area and the outer peripheral portion thereof, and is combined with the color filters 15a to 15c formed on the light receiving pixels.
  • the color filter layer is formed so as to extend from the light receiving pixel area 32 toward the outer peripheral portion 31.
  • the color filter 14 is the same as any of the red, green and blue color filters 15a to 15c used in the light receiving pixels. Alternatively, a black color filter may be used.
  • the light shielding member 22 is arranged so as to have a region 33 partially overlapping with the color filter 14 when viewed from the top.
  • the light shielding member 22 is disposed above the color filter 14 so as to cover at least a part of the light shielding metal 12 beyond the boundary Y on the side of the light shielding metal 12 facing the light receiving pixel formation region 32, and is mounted on the package by the fixing member 23.
  • the light-shielding metal 12 is formed so as not to be directly exposed to light as viewed from the light incident side.
  • the light shielding member 22 is preferably a black material, and preferably absorbs light in a wavelength region other than visible light such as infrared light.
  • the light shielding member 22 In order to prevent the reflected light from the light shielding metal 12 from entering the light receiving pixels as stray light, the light shielding member 22 It is necessary to make the extension range exactly coincide with the boundary X of the light receiving pixel formation region 32, the light shielding pixel, and the peripheral circuit formation region 31.
  • the extending range of the light shielding member 22 remains in the region 31, there is a region where the light shielding metal 12 is not covered by the light shielding member 22, and reflected light is generated.
  • the extending range of the light shielding member 22 exceeds the region 31 and includes the region 32, there are light receiving pixels that cannot receive light.
  • the solid-state imaging device 1 of the present embodiment at least the light shielding pixels on the boundary close to the light receiving pixel area are covered with the color filter layer made of the color filter 14 above the light shielding metal 12, so that the light shielding member It is not necessary to strictly position the 22 stretching ranges.
  • the color filters 14 and 15a to 15c can be formed in the manufacturing process of the solid-state imaging device, the alignment accuracy can be improved and it is easy to form the light-shielding metal so as not to be exposed.
  • FIG. 2 shows a layout of the solid-state imaging device 1 as viewed from above.
  • the outer peripheral portion covered with the light shielding metal 12 such as the light shielding pixel and the peripheral circuit is emphasized.
  • the color filters 15a to 15c are formed in a predetermined color arrangement layout (for example, checkered pattern).
  • a light shielding metal 12 is formed in a region sandwiched between the two dotted lines in FIG.
  • the region covered with the light shielding metal 12 is covered with at least one of the color filter 14 and the light shielding member 22 above the region, and covers both the color filter 14 and the light shielding member 22.
  • the light shielding metal 12 is not partially formed on the light shielding pixel or the peripheral circuit for stress relaxation or wiring, but it is not necessary to remove the color filter 14.
  • the area of the region 33 is more than half of the region where the color filter 14 is formed, so that high light shielding performance and absorption performance can be obtained.
  • a mark 41 indicating the alignment of the light shielding metal 12 is formed on the semiconductor substrate 11, and based on this, the color filters 14 and 15a to 15c formed thereabove are positioned with high accuracy. be able to.
  • a mark 43 indicating that the light shielding metal 12 has been formed is formed.
  • a mark 42 indicating the alignment of the color filter and a mark 44 indicating the mask of the color filter are formed on the semiconductor substrate 11, and the formation process of each of the color filters 14, 15a to 15c has been completed. Whether or not can be determined.
  • These marks 41 to 44 are covered with the light shielding member 22 to suppress reflection.
  • the light shielding member 22 is fixed by the fixing member 23.
  • a support plate may be provided on the fixing member 23, and the light shielding portion may be arranged and fixed on the support plate.
  • the structural example concerning FIG. 3 is shown.
  • the light shielding member 22 is disposed on the support plate 24.
  • the support plate 24 may be a transparent plate such as a glass plate, and the light shielding member 22 can be formed on an infrared cut filter, an ultraviolet cut filter, or a low-pass filter for reducing false color and moire. It is.
  • the light shielding member 22 is disposed on the support plate 24.
  • the light shielding member 22 may be disposed below the support plate or disposed so as to be sandwiched between two support plates.
  • a part of the light shielding metal 12 can be shielded by the light shielding member 22 or a part of the fixing member 23 for fixing the support plate 24.
  • the structural example concerning FIG. 4 is shown.
  • a part of the region 34 where the light shielding metal 12 is formed is covered with the fixing member 23, and any of the fixing member 23, the light shielding member 22, and the color filter 14.
  • the entire surface of the shading metal is covered.
  • the fixing member 23 has a role as a light shielding portion that prevents the intrusion of reflected light together with the light shielding member 22.
  • the fixing member 23 is preferably formed of black in order to sufficiently shield light, and preferably absorbs light in a wavelength region other than visible light such as infrared light.
  • the color filter layer above the light shielding metal 12 is preferably formed by laminating two or more color filters having different transmission colors.
  • the structural example concerning FIG. 5 is shown.
  • the color filter layer has a two-layer structure of a color filter 14a and a color filter 14b. Since the color filters 14a and 14b have different wavelengths of transmitted light, light transmitted through one color filter can be absorbed by the other color filter, and light can be effectively absorbed over the entire visible light region.
  • three layers of red, green and blue color filters are most preferably used to suppress the reflected light from the light shielding metal 12.
  • a structure in which a red color filter and a blue color filter are stacked is preferable because the wavelength distribution of transmittance does not overlap.
  • the color filters 14a and 14b are stacked as shown in FIG. 5, depending on the level of planarization of the planarization film 16, there is a step in the height of the planarization film 16 at the boundary between the light receiving pixel area and the outer periphery. As a result, it may be difficult to form the microlens 17 formed above the light receiving pixel area. For this reason, as shown in the solid-state imaging device 1d in FIG. 6, by forming the color filter in a single layer above the outer peripheral side boundary close to the light receiving pixel area, the height of the planarizing film 16 in the vicinity of the boundary is increased. It is preferable to facilitate the formation of the microlens 17 and the like by smoothing the variation.
  • one of a plurality of color filters constituting the color filter layer may be a black filter.
  • the structural example concerning FIG. 7 is shown.
  • the black color filter 14 c can be formed on the planarization film 16.
  • an antireflection film above the color filter layer.
  • the antireflection film may be formed directly on the color filter or may be formed on the planarization film.
  • the antireflection film 18 is formed on the planarizing film 16, and the solid-state imaging devices 1f and 1g are configured. As shown in the solid-state imaging device 1g of FIG. 9, the antireflection film 18 is formed on the planarizing film 16 by extending the antireflection film formed on the microlens 17, thereby preventing the antireflection film 18 from increasing the number of steps. Can be formed.
  • each of the color filters 14 and 14a to 14c constituting the color filter layer forms a color filter layout pattern particularly above the light shielding metal, as shown in FIGS. Without being deposited on the entire surface.
  • the light-shielding pixel serving as the black reference aligns the optical characteristics of the pixel such as sensitivity with the light-receiving pixel.
  • the color filter layer is composed of only one layer like the light-receiving pixels, and the planar shape and color arrangement layout of the color filter Is preferably maintained in the same manner as the light receiving pixels.
  • the color filter 14 formed above the light-shielding pixel has the same planar shape as the color filter formed on the light-receiving pixel in the light-shielding pixel close to the light-receiving pixel area.
  • An example formed with a color layout is shown.
  • FIG. 11 shows an example of the color filter layout.
  • the same color filters 15 a to 15 c as those formed above the light receiving pixels are disposed above the light shielding metal 12 in the region 35 near the light shielding pixels close to the light receiving pixel area. Is formed.
  • a green color filter 15a, a red color filter 15b, and a blue color filter 15c are formed in the light receiving pixel in the region 35 near the light shielding pixel adjacent to the light receiving pixel area.
  • the same planar shape (square) as that of the color filter is maintained, and the same color layout as that of the light receiving pixels (here, checkered pattern) is used.
  • a step is formed on the upper surface of the foundation layer 13 at the boundary between the light receiving pixel area and the light shielding pixel area. Occurs.
  • the shape of the color filter is important. Due to such a step, the shape of the color filter does not have the same line width and height near the boundary between the light receiving pixel area and the light shielding pixel area, and may change discontinuously. However, it is preferable to set the layout pattern so as to maintain the continuity of the shape of the color filter in consideration of such a step.
  • the line widths of the formed color filters 15a to 15c are continuous from the vicinity of the light shielding pixel 36 (boundary pixel) on the boundary close to the light receiving pixel area to the light receiving pixel 37 close to the light shielding pixel 36.
  • the line width changes slightly between adjacent pixels 36 and 37. In such a case, since the optical characteristics hardly change between such adjacent pixels, the planar shape of each color filter can be regarded as the same.
  • FIG. 12 shows an example of a cross-sectional structure when the solid-state imaging device 2 is formed without flattening the base layer 13.
  • the height of the color filter changes due to the level difference of the base layer 13 with the boundary X between the light receiving pixel area and the light shielding pixel area interposed therebetween.
  • the position of the upper surface of the color filters 14, 15a to 15c is formed so as to continuously change from the light receiving pixel area toward the light shielding pixel area or the peripheral circuit, so that the light receiving pixels caused by the steps are It is possible to reduce the discontinuity of the optical characteristics between the light shielding pixels.
  • the color filter is a kind of resist, and is usually formed by dissolving a pigment having an absorption band in the visible light region in a resist material. For this reason, at the time of exposure, it is assumed that reflected light from the light shielding metal 12 strikes the color filter resist, thereby affecting the progress of the crosslinking reaction of the color filter resist. As a result, the adhesion of the color filter resist deteriorates, and the line width of the color filter formed by development changes. When the adhesion of the color filter resist is not sufficient, the color filter resist may be peeled off, and it may cause dust.
  • FIG. 13 and 14 show specific examples in which the solid-state imaging device of the present invention is packaged.
  • FIG. 13 and FIG. 14 are a top layout diagram and an example of a cross-sectional structure showing an example of the arrangement of pads and wire bonding when the solid-state imaging device 1 (1d) is packaged, respectively.
  • the solid-state imaging device 1d is connected between the pad 45 on the solid-state imaging device side and the pad 46 on the package side by wiring 47 for wire bonding.
  • the pads 45 and 46 and the wiring 47 are covered and sealed with resin.
  • the light shielding member 22 covers the pads 45 and 46 and the wiring 47 on the resin. Since each of the pads 45 and 46 and the wiring 47 has a high reflectance and a large area, the light reflected from the light shielding metal 12 can be suppressed by covering with the light shielding member 22 when packaging or modularizing. Can do.
  • one or more layers of the color filters 14, 14a to 14c, and 15a to 15c as light absorbing materials are stacked above the light shielding metal 12.
  • the color filter layer and the light shielding member 22 so as to overlap each other when viewed from above, the reflected light from the light shielding metal 12 can be suppressed, and the occurrence of flare and ghost can be reliably suppressed.
  • the planar shape and color arrangement of the color filter are changed to the planar shape and color arrangement of the light-receiving pixels.
  • the present invention is not limited to this, and similarly to the above-described solid-state imaging devices 1a, 1b, 1d to 1g, the color filter of the light shielding pixel near the boundary between the light receiving pixel area and the light shielding pixel area is similarly used.
  • a configuration in which the planar shape and color arrangement layout are the same as the planar shape and color arrangement layout of the light receiving pixels can be employed.
  • the light-shielding pixel area is formed adjacent to the light-receiving pixel area on the outer periphery of the light-receiving pixel area.
  • the present invention is also applied to a configuration without light-shielding pixels. Is possible.
  • the effect of the present invention can be obtained by arranging the color filter layer and the light shielding member 22 above the light shielding metal 12 so as to overlap each other when viewed from the upper surface. .
  • the present invention is not impeded by the configuration of the solid-state imaging device such as the layout of photodiodes provided in each pixel.
  • the present invention can be used as a solid-state imaging device.
  • Solid-state imaging device 11 Semiconductor substrate 12: Light shielding metal 13: Underlayer 14, 14, 14a to 14c, 15a to 15c: Color filter 16: Planarizing film 17: Micro lens 18: Antireflection film 21: Package substrate 22: Light shielding member 23: Fixing member 24: Support plate 31: Formation region of light shielding pixel (light shielding pixel area) and peripheral circuit of solid-state imaging device 32: Formation region of light receiving pixel (light receiving pixel area) 33: Area where the color filter layer and the light shielding portion overlap above the light shielding metal 34: Area where the light shielding metal is covered by the fixing member 35: In the light shielding pixel area where the color filter is formed with the same color arrangement layout as the light receiving pixel area Area 36: Boundary pixel (light-shielding pixel adjacent to the light-receiving pixel area) 37: A light receiving pixel adjacent to the boundary pixel 41: A mark indicating the alignment of the light shielding metal 42: A

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un appareil de capture d'image à semi-conducteurs conçu de sorte que la lumière réfléchie par un métal de blocage de la lumière formé au-dessus de pixels étanches à la lumière ou d'un circuit périphérique est empêchée de pénétrer dans des sections de réception de lumière et de créer des lumières ou images parasites. Une ou plusieurs couches de filtres colorés (14) sont agencées comme matériau d'absorption de lumière au-dessus d'un métal de blocage de la lumière (12) de manière à recouvrir au moins le côté périphérique extérieur de la partie limite, entre les pixels récepteurs de lumière et les pixels étanches à lumière, ou le circuit périphérique formé à la périphérie extérieure des pixels récepteurs de lumière. En outre, un élément de blocage de la lumière (22) est agencé de manière à créer une partie où l'élément de blocage de la lumière (22) et les filtres colorés (14) se chevauchent au-dessus du métal de blocage de la lumière (12), et de sorte que toutes les parties du métal de blocage de la lumière (12) soient recouvertes par l'élément de blocage de la lumière et/ou les couches de filtres colorés selon une vue en plan.
PCT/JP2012/078982 2012-01-26 2012-11-08 Appareil de capture d'image à semi-conducteurs WO2013111419A1 (fr)

Applications Claiming Priority (2)

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JP2012014601 2012-01-26
JP2012-014601 2012-01-26

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