WO2013108623A1 - Procédé de fabrication d'une cellule solaire intégrée - Google Patents

Procédé de fabrication d'une cellule solaire intégrée Download PDF

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Publication number
WO2013108623A1
WO2013108623A1 PCT/JP2013/000190 JP2013000190W WO2013108623A1 WO 2013108623 A1 WO2013108623 A1 WO 2013108623A1 JP 2013000190 W JP2013000190 W JP 2013000190W WO 2013108623 A1 WO2013108623 A1 WO 2013108623A1
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Prior art keywords
electrode layer
layer
groove
solar cell
photoelectric conversion
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PCT/JP2013/000190
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English (en)
Japanese (ja)
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栄郎 矢後
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富士フイルム株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method for manufacturing a thin-film solar cell having an integrated structure, and in particular, an integrated solar cell that can form an integrated structure that is excellent from the viewpoint of power generation efficiency and production efficiency in a small number of steps and that has excellent production efficiency Regarding the method.
  • a photoelectric conversion element having a laminated structure of a lower electrode (back surface electrode), a photoelectric conversion semiconductor layer that generates charges by light absorption, and an upper electrode is used for applications such as solar cells.
  • Compound semiconductor solar cells include CIS (Cu-In-Se) or CIGS (Cu-In-Ga-Se), which is composed of a bulk system such as a GaAs system, and a group IB element, group IIIB element and group VIB element. And other thin film systems are known.
  • the CIS system or CIGS system is reported to have a high light absorption rate and high energy conversion efficiency.
  • a method for integrating compound semiconductor solar cells As a method for integrating compound semiconductor solar cells, a method of performing a three-stage scribe process is well known.
  • the electrode layer 112 is scribed to form the first separation groove P1, and as shown in FIG. 16B.
  • a photoelectric conversion layer 113, a buffer layer 114, and a window layer 115 are sequentially formed to form a separation groove P2 penetrating therethrough and reaching the surface of the electrode layer 112.
  • a layer (upper electrode) 116 is formed, and a separation groove P3 extending from the upper electrode 116 to the surface of the lower electrode layer is formed. In this way, an integrated structure is formed in which adjacent cells are separated by the separation groove P3 and adjacent cells are connected in series by the light-transmitting conductive layer material embedded in the separation groove P2.
  • Patent Document 1 discloses a method for manufacturing an integrated photoelectric conversion device in which a base electrode, a photoelectric conversion layer, and a transparent electrode are collectively formed on a substrate, and three scribing operations each having a different depth are collectively performed. ing. This Patent Document 1 describes that batch film formation and batch scribing are simpler than the method of performing scribing for each layer, and the number of steps can be reduced, so that the time required for manufacturing can be shortened. Has been.
  • Patent Document 2 discloses a method in which a base electrode, a photoelectric conversion layer, and a transparent electrode are collectively formed on a substrate, and then a single scribe process is performed.
  • a base electrode, a photoelectric conversion layer, and a transparent electrode are collectively formed on a substrate, and then a single scribe process is performed.
  • one groove portion having a narrow groove for separating the base electrode is formed at the bottom, and then one side wall of the groove portion and the narrow groove for separating the base electrode are insulated.
  • a method of depositing a body and connecting conductors thereon to electrically connect cells is disclosed. Thus, it is disclosed that the distance between cells necessary for connection can be shortened and the power generation efficiency per unit area can be increased.
  • Patent Document 3 after forming a plurality of transparent electrodes having a predetermined shape on a substrate, a photoelectric conversion layer and an electrode layer are formed, and then a connection groove and an insulation groove are formed by laser beam irradiation.
  • a method of manufacturing an integrated solar cell by filling a conductive paste into a conductive paste and forming a connection portion is disclosed.
  • Patent Document 1 since three grooves are formed, it is difficult to shorten the distance between the cells, and the power generation efficiency cannot be increased. In Patent Document 2, it seems that the distance between the cells can be shortened because there is one groove. However, since the photosensitive polymer (insulating ink) used for forming the insulator is actually widened, the scribe is performed. Need to be wide. For this reason, the area of the cell per unit area becomes small, and sufficient power generation efficiency cannot be improved.
  • the lower electrode layer is scribed after deposition of the photoelectric conversion layer as in 1 and 2, it is necessary to irradiate a high-power laser beam, which may damage the substrate under the lower electrode layer.
  • Patent Document 3 has a structure in which a conductive material is in contact with the cross section of the photoelectric conversion layer and the upper electrode, which causes current leakage in the photoelectric conversion layer and reduces power generation efficiency.
  • This invention is made
  • the present invention is a method for manufacturing an integrated solar cell, wherein a plurality of photoelectric conversion elements are arranged on a substrate and connected in series, Forming a first electrode layer on a substrate having at least an insulating surface; Forming a separation groove in which the surface of the substrate is exposed at the bottom of the first electrode layer to separate the first electrode layer into a plurality of regions; A photoelectric conversion layer and a second electrode layer are sequentially laminated so as to cover the surface of the substrate exposed to the first electrode layer and the separation groove, thereby forming a laminate.
  • a part of the stacked body is an opening groove part having a depth parallel to the separation groove and reaching the surface position of the first electrode layer, and spaced from both walls of the groove part in the groove width direction of the opening groove part.
  • a connecting portion that electrically connects the second electrode layer of one of the photoelectric conversion elements adjacent to each other across the opening groove and the first electrode layer of the other element is connected to the opening groove. It is formed by dropping conductive ink from the part of the laminate to the one element side.
  • connection portion forming step it is preferable that the part of the stacked body is used as a stopper portion that suppresses spreading of the conductive ink to the other element side.
  • an insulating portion extending in the height direction of the wall surface is formed on at least a part of the wall surface on the one element side of the opening groove portion, It is preferable that the connecting portion is formed on the insulating portion.
  • the separation groove is preferably formed by laser scribe.
  • the opening groove is formed by mechanically scribing two grooves at a predetermined interval so that a part of the laminated body remains in a region to be the opening groove.
  • the connecting portion is formed by dropping the conductive ink by an ink jet method.
  • the first electrode layer is divided into a plurality of regions by forming separation grooves. Therefore, even when a material such as a photoelectric conversion layer that is cured by thermal history is used for the first electrode layer, it is relatively small because it is in a state before receiving the thermal history. Separation grooves can be formed with power.
  • the opening groove is formed after the photoelectric conversion layer and the second electrode layer are formed, so that an integrated structure can be manufactured with few steps, and excellent production efficiency can be obtained. Can be realized.
  • FIG. 1 It is typical sectional drawing which shows the integrated solar cell manufactured with the manufacturing method of the 1st Embodiment of this invention. It is a schematic plan view of the principal part of the integrated solar cell shown in FIG. It is a schematic plan view of the principal part of the modification of the integrated solar cell manufactured with the manufacturing method of the 1st Embodiment of this invention. It is typical sectional drawing which shows the manufacturing method of embodiment to process order. It is typical sectional drawing which shows the manufacturing method of the 1st Embodiment of this invention to process order. It is typical sectional drawing which shows the integrated solar cell manufactured with the manufacturing method of the 2nd Embodiment of this invention. It is a schematic plan view of the principal part of the integrated solar cell shown in FIG.
  • FIG. 1 It is a schematic plan view of the principal part of the modification of the integrated solar cell manufactured with the manufacturing method of the 2nd Embodiment of this invention. It is typical sectional drawing which shows the manufacturing method of the 2nd Embodiment of this invention to process order. It is typical sectional drawing which shows the deformability of the manufacturing method of the 2nd Embodiment of this invention. It is typical sectional drawing which shows the integrated solar cell manufactured with the manufacturing method of the 3rd Embodiment of this invention. It is a schematic plan view of the principal part of the integrated solar cell shown in FIG. It is a schematic plan view of the principal part of the modification of the integrated solar cell manufactured with the manufacturing method of the 3rd Embodiment of this invention.
  • FIG. 1 is a schematic cross-sectional view showing an integrated solar cell 1 manufactured by the manufacturing method of the first embodiment of the present invention.
  • FIG. 2 is a schematic plan view of the main part of the integrated solar cell 1 shown in FIG. 1
  • FIG. 3 is a schematic plan view of the main part of a modification of the integrated solar cell of the present embodiment.
  • the integrated solar cell 1 includes a substrate 10 whose surface layer is an insulating layer 10a and an insulating layer 10a of the substrate 10, with a line-shaped opening groove 22 interposed therebetween.
  • the solar cells 20a to 20d are separated by the opening groove 22, and the back electrode layer 12, which is the first electrode layer, the photoelectric conversion layer 13, the buffer layer 14, and the transparent electrode layer 16 which is the second electrode layer.
  • the conductive layer 40 is formed as a connection portion for electrically connecting the transparent electrode of one cell of the cells adjacent to each other with the opening groove 22 interposed therebetween and the back electrode of the other cell.
  • adjacent cells are connected in series and integrated.
  • the transparent electrode layer 16 of the solar battery cell 20a and the back electrode layer 12 of the solar battery cell 20b are electrically connected by the conductive layer 40.
  • a covering insulating portion 42 is formed so as to cover the conductive layer 40.
  • the number of connected solar cells is not particularly limited. Further, in the solar battery cell, it is not necessarily provided depending on the configuration of the buffer layer 14 and the photoelectric conversion layer 13. Further, a window layer (insulating layer) may be provided between the buffer layer 14 and the transparent electrode layer 16.
  • the substrate 10 of the present embodiment has its shape, size, and the like determined as appropriate according to the size of the integrated solar cell 1 to be applied.
  • the length of one side A rectangular shape or a rectangular shape with a length exceeding 1 m.
  • the solar cells 20a to 20d and the first and second conductive members 50 and 52 are formed in a strip shape extending long in the width direction W (extending direction) perpendicular to the longitudinal direction L (arrangement direction) on the substrate 10. Is formed.
  • the back electrode layer 12 is separated from adjacent back electrode layers 12 by a plurality of separation grooves 21 provided in the longitudinal direction L of the substrate 10 at predetermined intervals.
  • the separation groove 21 is a groove reaching the surface of the substrate 10 (insulating layer 10a), and its width is, for example, 50 ⁇ m.
  • the photoelectric conversion layer 13 is embedded in the separation groove 21.
  • the opening groove portion 22 is formed in parallel to the separation groove 21 and at a depth that is substantially the surface position of the back electrode layer 12. Further, in the groove width direction of the opening groove portion 22, both the walls ⁇ and ⁇ of the groove portion are stacked, that is, at positions separated from the wall surface ⁇ of one cell 20a and the wall surface ⁇ of the other cell 20b of the cells adjacent to each other across the groove portion. A part of the body, here, part of the photoelectric conversion layer 13 is left as a stopper part 24 described later. In other words, the opening groove portion 22 includes the stopper portion 24 and two concave portions (grooves) 22a and 22b that sandwich the stopper portion 24.
  • the width of the opening groove is, for example, 50 ⁇ m to 100 ⁇ m.
  • the opening groove 22 is formed at a position where the back electrode of one cell 20a is not exposed to the first groove 22a and the back electrode of the other cell 20b is at least partially exposed to the first groove 22a. ing. At this time, it is preferable that the separation groove 21 at least partially overlaps the position of one wall surface ⁇ of the opening groove portion 22.
  • the separation groove 21 may be located on the one cell 20a side (under one cell 20a) from the wall surface ⁇ , but in order to suppress a loss portion that does not contribute to photoelectric conversion, the separation groove 21 is located near the wall surface ⁇ . It is hoped that
  • the stopper portion 24 is located on the back electrode layer 12 of the other cell 20b to which the conductive layer 40 is connected to the back electrode layer 12, and the back electrode layer 12 has one of the back electrode layers 12 so as to contact the conductive layer 40. It is necessary to be exposed to the bottom part by the side of the recessed part 22a.
  • the conductive layer 40 is formed over the entire width direction W of the substrate 10 of the solar battery cell 20a. Further, the covering insulating portion 42 is also formed over the entire width direction W of the substrate 10 so as to cover the conductive layer 40.
  • the solar cells 20a to 20d need only be electrically connected in series, and the conductive layer 40 may not be formed over the entire width direction W of the substrate 10.
  • the solar cells 20a to 20d are connected at least partially using the conductive layer 40 in the width direction W.
  • three conductive layers 40a may be formed in the width direction W with respect to the cell 20a, and the covering insulating portion 42a may be formed so as to cover each conductive layer 40a.
  • the first conductive member 50 and the second conductive member 52 arranged at both ends of the solar cells connected in series are for taking out the electric power generated in the solar cells to the outside.
  • the first conductive member 50 and the second conductive member 52 are, for example, strip-shaped members that extend substantially linearly in the width direction of the substrate 10 and are connected to the right-side or left-end back electrode layer 12 respectively.
  • the first conductive member 50 and the second conductive member 52 are, for example, copper ribbons 50a and 52a covered with covering materials 50b and 52b of indium copper alloy.
  • the first conductive member 50 and the second conductive member 52 are connected to the back electrode layer 12 by ultrasonic solder, a conductive adhesive, a conductive tape, or the like.
  • the first conductive member 50 and the second conductive member 52 may be tin-plated copper ribbons.
  • the integrated solar cell 1 having this configuration, when light is incident on the solar cells 20a to 20d from the transparent electrode layer 16 side, the light passes through the transparent electrode layer 16 and the buffer layer 14, and the photoelectric conversion layer 13 An electromotive force is generated, and for example, a current from the transparent electrode layer 16 toward the back electrode layer 12 is generated.
  • the electric power generated in the integrated solar cell 1 can be taken out of the solar cell 1 from the first conductive member 50 and the second conductive member 52.
  • the first conductive member 50 is a negative electrode and the second conductive member 52 is a positive electrode.
  • the first conductive member 50 and the second conductive member 52 have opposite polarities. It may be appropriately changed depending on the layer configuration, connection configuration, and the like of the solar cells 20a to 20d.
  • FIGS. 4 and 5 are partial schematic cross-sectional views showing the manufacturing process, and show the main part of the integrated structure including the partial cells 20a and 20b and the opening groove between them.
  • a substrate 10 having a predetermined size and having an insulating surface is prepared.
  • the substrate 10 is, for example, provided with an anodized film 10a on the surface of an aluminum base material.
  • the back surface electrode layer 12 is formed in the surface of the board
  • a separation groove 21 in which the surface of the substrate 10 is exposed at the bottom is formed in the back electrode layer 12, and the back electrode layer 12 is separated into a plurality of regions.
  • the separation groove 21 is preferably formed by laser scribing. Since the separation groove 21 is formed before the back electrode layer 12 receives the thermal history, the scribing can be performed with a relatively low power even when the back electrode layer is made of a material that is cured by a thermal history such as Mo. it can. When a laser is used, there is a problem that the substrate is damaged when a relatively large power is used. However, the manufacturing method of the present invention does not cause a problem that the substrate is damaged.
  • the photoelectric conversion layer 13, the buffer layer 14, and the second electrode layer are transparent so as to cover the surface of the substrate 10 exposed at the bottoms of the back electrode layer 12 and the separation groove 21.
  • the electrode body 16 is sequentially laminated to form a laminate S.
  • an opening groove 22 having a depth parallel to the separation groove 21 and reaching the surface position of the back electrode layer 12 is formed.
  • the opening groove portion 22 is formed so as to leave a part 24 of the stacked body S at a position spaced from both walls ⁇ and ⁇ of the opening groove portion 22 in the groove width direction of the opening groove portion 22.
  • two recesses (grooves) 22a and 22b having a depth reaching the surface position of the back electrode layer 12 from above the stacked body S at a predetermined interval are formed by laser or mechanical scribing at a desired opening groove forming position.
  • the opening groove portion 22 in which a part 24 of the stacked body S is left between the two grooves 22a and 22b can be formed.
  • the back electrode layer 12 is exposed in the first and second grooves 22 a and 22 b sandwiching the part 24 of the laminated body of the formed opening groove 22, and is partially embedded in the separation groove 21.
  • the photoelectric conversion layer 13 is exposed.
  • the opening groove portion formation position is controlled so that the back electrode layer 12 of the cell 20a having the one wall surface ⁇ of the opening groove portion 22 is not exposed to the first groove 22a.
  • the photoelectric conversion layer 13 is left as a part 24 of the laminated body in the opening groove 22, and the buffer layer 14 and the transparent electrode layer are included in the part 24. 16 may remain.
  • the conductive ink (conductive paste) that becomes the conductive layer 40 is first applied from the transparent electrode layer 16 of one solar battery cell 20 a to the first.
  • the droplets are ejected in a range extending to the back electrode layer 12 of the other solar battery cell 20b in the groove 22a.
  • the conductive ink is restrained by the stopper portion 24 and is prevented from spreading toward the second groove 22b. That is, the conductive ink is prevented from contacting the wall surface ⁇ of the other solar battery cell 20b.
  • the back electrode layer 12 of one cell 20a is not exposed in the first groove 22a, a short circuit between the adjacent cells 20a and 20b is prevented.
  • a heat curing process and a light curing process are performed according to the conductive ink.
  • the conductive layer 40 as a conductive connection portion is formed.
  • the coating insulating part 42 is formed so as to cover the conductive layer 40.
  • an insulating ink is ejected onto the conductive layer 40, and a heat curing process or a light curing process according to the insulating ink is performed.
  • the film insulation part 42 is formed.
  • the film insulating part 42 only needs to be formed so as to cover the conductive layer 40, but in the present embodiment, the film insulating part 42 extends beyond the stopper part 24 and part of the second groove 22 b.
  • the coating insulating part 42 may be filled in the entire opening groove part 22.
  • the coating insulating portion 42 is not necessarily provided.
  • the migration of the metal particles can be prevented by covering the conductive layer 40 with the coating insulating portion 42, thereby preventing the efficiency from being lowered due to the migration. Can do.
  • the metal particles are silver (Ag)
  • the occurrence of migration is remarkable, and the effect of preventing the reduction in efficiency is high by preventing migration. Therefore, it is preferable to use an insulating material having an effect of preventing migration.
  • the coating insulating part 42 can more reliably prevent a short circuit between adjacent cells.
  • an integrated solar cell 1 in which a plurality of solar cells 20a to 20d are connected as shown in FIG. 1 can be manufactured.
  • the cells are connected by the opening groove 22, so that the solar cell per unit area is compared with the integrated solar cell having three separation grooves.
  • the power generation efficiency can be improved by increasing the area of the battery cell.
  • the opening groove portion 22 is provided with the stopper portion 24 to suppress the spreading of the conductive ink, the width of the opening groove portion 22 can be shortened, and the power generation efficiency per unit area can be further improved. .
  • the stacked body S having other layers constituting the solar battery cell is continuously formed, and the opening groove portion 22 and the stopper portion 24 are formed.
  • the production efficiency can be increased.
  • the back electrode is scribed before the photoelectric conversion layer is formed, power necessary for scribing the back electrode can be suppressed, and damage to the substrate due to high output power can be prevented. Yield can be improved.
  • FIG. 6 is a schematic cross-sectional view showing an integrated solar cell 2 manufactured by the manufacturing method of the second embodiment of the present invention.
  • FIG. 7 is a schematic plan view of the main part of the integrated solar cell 2 shown in FIG. 6, and
  • FIG. 8 is a schematic plan view of the main part of Modification 2 ′ of the integrated solar cell of the present embodiment. is there.
  • the integrated solar cell 2 includes a substrate 10 whose surface layer is an insulating layer 10 a and an insulating layer 10 a of the substrate 10, with a line-shaped opening groove 22 interposed therebetween.
  • the solar cells 20a to 20d are separated by the opening groove 22, and the back electrode layer 12, which is the first electrode layer, the photoelectric conversion layer 13, the buffer layer 14, and the transparent electrode layer 16 which is the second electrode layer.
  • the conductive layer 40 is formed as a connection portion for electrically connecting the transparent electrode of one cell of the cells adjacent to each other with the opening groove 22 interposed therebetween and the back electrode of the other cell.
  • adjacent cells are connected in series and integrated.
  • the transparent electrode layer 16 of the solar battery cell 20a and the back electrode layer 12 of the solar battery cell 20b are electrically connected by the conductive layer 40.
  • the insulating portion 44 is formed so as to cover one wall surface ⁇ of the opening groove portion 22, and the conductive layer 40 is not in contact with the wall surface ⁇ by the insulating portion 44, and is on the cell side having the wall surface ⁇ . It is formed so as to be connected to the transparent electrode layer 16. In the present embodiment, since the conductive layer 40 does not contact the wall surface ⁇ , generation of internal leakage current of the solar battery cell having the wall surface ⁇ is prevented.
  • the buffer layer 14 is not necessarily provided depending on the configuration of the photoelectric conversion layer 13. Further, a window layer (insulating layer) may be provided between the buffer layer 14 and the transparent electrode layer 16.
  • the substrate 10 of this embodiment has its shape, size, and the like determined as appropriate according to the size of the integrated solar cell 2 to be applied.
  • the length of one side A rectangular shape or a rectangular shape with a length exceeding 1 m.
  • the solar cells 20a to 20d and the first and second conductive members 50 and 52 are formed in a strip shape extending long in the width direction W (extending direction) perpendicular to the longitudinal direction L (arrangement direction) on the substrate 10. Is formed.
  • the back electrode layer 12 is separated from adjacent back electrode layers 12 by a plurality of separation grooves 21 provided in the longitudinal direction L of the substrate 10 at predetermined intervals.
  • the separation groove 21 is a groove reaching the surface of the substrate 10 (insulating layer 10a), and its width is, for example, 50 ⁇ m.
  • the photoelectric conversion layer 13 is embedded in the separation groove 21.
  • the opening groove portion 22 is formed in parallel to the separation groove 21 and at a depth that is substantially the surface position of the back electrode layer 12. Further, in the groove width direction of the opening groove portion 22, both the walls ⁇ and ⁇ of the groove portion are stacked, that is, at positions separated from the wall surface ⁇ of one cell 20a and the wall surface ⁇ of the other cell 20b of the cells adjacent to each other across the groove portion. A part of the body, here, part of the photoelectric conversion layer 13 is left as a stopper part 24 described later. In other words, the opening groove portion 22 includes the stopper portion 24 and two concave portions (grooves) 22a and 22b that sandwich the stopper portion 24.
  • the width of the opening groove is, for example, 50 ⁇ m to 100 ⁇ m.
  • the opening groove portion 22 is preferably formed so that the separation groove 21 is located on the wall surface ⁇ side of the stopper portion 24 from the vicinity of one wall surface ⁇ of the opening groove portion 22.
  • the separation groove 21 may be located on the one cell 20a side (under one cell 20a) from the wall surface ⁇ , but in order to suppress a loss portion that does not contribute to photoelectric conversion, the separation groove 21 is located near the wall surface ⁇ . It is hoped that
  • the stopper part 24 should just be located on the back surface electrode layer 12 of the other cell 20b to which the conductive layer 40 is connected to the back surface electrode layer 12, or on the photoelectric conversion layer embedded in the separation groove 21.
  • the back surface electrode layer 12 of the other cell 20b needs to be exposed in the recess 22b on the other wall surface ⁇ side of the stopper portion 24 in order to bring the conductive layer 40 into contact therewith.
  • the insulating part 44 and the conductive layer 40 are formed over the entire width direction W of the substrate 10 of the solar battery cell 20a.
  • the solar cells 20 a to 20 d can be electrically connected in series, and the conductive layer 40 does not have to be formed over the entire width direction W of the substrate 10.
  • the conductive layer 40 does not have to be formed over the entire width direction W of the substrate 10.
  • three conductive layers 40a may be formed in the width direction W with respect to the cell 20a.
  • the insulating portion 44 may not be continuously formed in the width direction W as long as the conductive layer 40a is formed so as not to contact the wall surface ⁇ .
  • the first conductive member 50 and the second conductive member 52 arranged at both ends of the solar cells connected in series are for taking out the electric power generated in the solar cells to the outside.
  • the first conductive member 50 and the second conductive member 52 are, for example, strip-shaped members that extend substantially linearly in the width direction of the substrate 10 and are connected to the right-side or left-end back electrode layer 12 respectively.
  • the first conductive member 50 and the second conductive member 52 are, for example, copper ribbons 50a and 52a covered with covering materials 50b and 52b of indium copper alloy.
  • the first conductive member 50 and the second conductive member 52 are connected to the back electrode layer 12 by ultrasonic solder, a conductive adhesive, a conductive tape, or the like.
  • the first conductive member 50 and the second conductive member 52 may be tin-plated copper ribbons.
  • the integrated solar cell 2 of this configuration when light is incident on the solar cells 20a to 20d from the transparent electrode layer 16 side, the light passes through the transparent electrode layer 16 and the buffer layer 14, and the photoelectric conversion layer 13 An electromotive force is generated, and for example, a current from the transparent electrode layer 16 toward the back electrode layer 12 is generated. Electric power generated in the integrated solar cell 2 can be taken out of the solar cell 2 from the first conductive member 50 and the second conductive member 52.
  • the first conductive member 50 is a negative electrode and the second conductive member 52 is a positive electrode.
  • the first conductive member 50 and the second conductive member 52 have opposite polarities. It may be appropriately changed depending on the layer configuration, connection configuration, and the like of the solar cells 20a to 20d.
  • FIG. 4 and FIG. 4 and 9 are partial schematic cross-sectional views showing the manufacturing process, and show a portion that becomes an opening groove between some cells 20a and 20b.
  • the manufacturing method of the second embodiment is the same as the manufacturing method of the first embodiment with respect to steps a to c shown in FIG. 4, and the description of the manufacturing method of the first embodiment is incorporated.
  • the manufacturing process after d in FIG. 9 will be described.
  • an opening groove 22 having a depth parallel to the separation groove 21 and reaching the surface position of the back electrode layer 12 is formed.
  • the opening groove portion 22 is formed so that a part 24 of the stacked body S is left in a position spaced from both walls ⁇ and ⁇ of the opening groove portion 22 in the groove width direction of the opening groove portion 22.
  • two recesses (grooves) 22a and 22b are formed at a predetermined interval from above the stacked body S at a desired opening groove forming position by laser or mechanical scribe, so that the gap between the two grooves 22a and 22b is formed.
  • the opening groove part 22 in which a part of the stacked body S is left can be formed.
  • the opening groove 22 is formed so that the second groove 22b is wider than the first groove 22a.
  • the back electrode layer 12 is exposed in the first and second grooves 22 a and 22 b sandwiching the part 24 of the laminated body of the formed opening groove 22, and is partially embedded in the separation groove 21.
  • the photoelectric conversion layer 13 is exposed. Note that an opening groove is formed at the bottom on the first groove 22a side so that the back electrode of one cell 20a is not exposed.
  • the photoelectric conversion layer 13 embedded in the separation groove 21 may be exposed over the entire bottom portion of the first groove 22a. Further, in the present embodiment, the photoelectric conversion layer 13 is left as a part 24 of the laminate, but the buffer layer 14 and the transparent electrode layer 16 remain in this part 24. May be.
  • the insulating ink that becomes the insulating portion 44 is formed in the vicinity of the wall surface ⁇ and the first wall so that the one wall surface ⁇ of the opening groove portion 22 is covered.
  • the droplets are ejected into the groove 22a.
  • the insulating ink is ejected from the stopper portion 24 toward the first groove 22a, it is prevented from being blocked by the stopper portion 24 and spreading toward the second groove 22b.
  • the insulating portion 44 is formed by performing a thermosetting process and a photocuring process according to the ink material.
  • the conductive layer 40 is formed on the insulating portion 44 so as to be in contact with the back electrode layer 12 of the other cell 20b from the transparent electrode layer 16 of the one cell 20a.
  • the other exposed conductive ink conductive paste
  • the droplets are ejected over a range extending to the back electrode 12 of the cell 20b.
  • the conductive layer 40 which electrically connects the transparent electrode 30 of the solar battery cell 20a and the back electrode 12 of the solar battery cell 20b is formed.
  • the conductive layer 40 is connected to the back electrode 12 of the solar battery cell 20 b beyond the stopper portion 24.
  • the conductive layer 40 is formed on the insulating portion 44, the conductive layer 40 is not in contact with the wall surface ⁇ , so that the internal leakage current of the solar battery cell having the wall surface ⁇ is prevented.
  • an integrated solar cell 2 in which a plurality of solar cells 20a to 20d are connected as shown in FIG. 6 can be manufactured.
  • the cells are connected by the opening groove 22, so that the solar cell per unit area is compared with the integrated solar cell having three separation grooves.
  • the power generation efficiency can be improved by increasing the area of the battery cell.
  • the laminated body S having other layers constituting the solar battery cell is continuously formed, and then the opening groove portion 22 and the stopper portion 24 are formed.
  • the back electrode is scribed before the photoelectric conversion layer is formed, power necessary for scribing the back electrode can be suppressed, and damage to the substrate due to high output power can be prevented. Yield can be improved.
  • an integrated solar cell including the coating insulating portion 42 may be formed by forming a coating insulating portion 42 that covers the conductive layer 40.
  • the film insulation part 42 is provided, the same effect as the case of 1st Embodiment can be acquired.
  • FIG. 11 is a schematic cross-sectional view showing an integrated solar cell 3 manufactured by the manufacturing method of the third embodiment of the present invention.
  • FIG. 12 is a schematic plan view of the main part of the integrated solar cell 3 shown in FIG. 11, and
  • FIG. 13 is a schematic plan view of the main part of Modification 3 ′ of the integrated solar cell of the present embodiment. is there.
  • the integrated solar cell 3 includes a substrate 10 whose surface layer is an insulating layer 10a and an insulating layer 10a of the substrate 10, with a line-shaped opening groove 22 interposed therebetween.
  • the solar cells 20a to 20d are separated by the opening groove 22, and the back electrode layer 12, which is the first electrode layer, the photoelectric conversion layer 13, the buffer layer 14, and the transparent electrode layer 16 which is the second electrode layer.
  • the conductive layer 40 is formed as a connection portion for electrically connecting the transparent electrode of one cell of the cells adjacent to each other with the opening groove 22 interposed therebetween and the back electrode of the other cell.
  • adjacent cells are connected in series and integrated.
  • the transparent electrode layer 16 of the solar battery cell 20a and the back electrode layer 12 of the solar battery cell 20b are electrically connected by the conductive layer 40.
  • the insulating portion 44 is formed so as to cover one wall surface ⁇ of the opening groove portion 22, and the conductive layer 40 is not in contact with the wall surface ⁇ by the insulating portion 44, and is on the cell side having the wall surface ⁇ . It is formed so as to be connected to the transparent electrode layer 16. In the present embodiment, since the conductive layer 40 does not contact the wall surface ⁇ , generation of internal leakage current of the solar battery cell having the wall surface ⁇ is prevented.
  • the buffer layer 14 is not necessarily provided depending on the configuration of the photoelectric conversion layer 13. Further, a window layer (insulating layer) may be provided between the buffer layer 14 and the transparent electrode layer 16.
  • the shape, size, etc. of the substrate 10 of this embodiment are appropriately determined according to the size, etc. of the integrated solar cell 3 to be applied.
  • the length of one side A rectangular shape or a rectangular shape with a length exceeding 1 m.
  • the solar cells 20a to 20d and the first and second conductive members 50 and 52 are formed in a strip shape extending long in the width direction W (extending direction) perpendicular to the longitudinal direction L (arrangement direction) on the substrate 10. Is formed.
  • the back electrode layer 12 is separated from adjacent back electrode layers 12 by a plurality of separation grooves 21 provided in the longitudinal direction L of the substrate 10 at predetermined intervals.
  • the separation groove 21 is a groove reaching the surface of the substrate 10 (insulating layer 10a), and its width is, for example, 50 ⁇ m.
  • the photoelectric conversion layer 13 is embedded in the separation groove 21.
  • the opening groove portion 22 is formed in parallel to the separation groove 21 and at a depth that is substantially the surface position of the back electrode layer 12. Further, in the groove width direction of the opening groove portion 22, both the walls ⁇ and ⁇ of the groove portion are stacked, that is, at positions separated from the wall surface ⁇ of one cell 20a and the wall surface ⁇ of the other cell 20b of the cells adjacent to each other across the groove portion. A part of the body, here, part of the photoelectric conversion layer 13 is left as a stopper part 24 described later. In other words, the opening groove portion 22 includes the stopper portion 24 and two concave portions (groove portions) 22a and 22b sandwiching the stopper portion 24.
  • the width of the opening groove is, for example, 50 ⁇ m to 100 ⁇ m.
  • the opening groove 22 is formed at a position where the back electrode of the other cell 20b is at least partially exposed to the first groove 22a.
  • the separation groove 21 is preferably located in the vicinity of one wall surface ⁇ of the opening groove portion 22.
  • the separation groove 21 may be located on the one cell 20a side (under one cell 20a) from the wall surface ⁇ , but in order to suppress a loss portion that does not contribute to photoelectric conversion, the separation groove 21 is located near the wall surface ⁇ . It is hoped that
  • the stopper 24 is located on the back electrode 12 of the other cell 20b to which the conductive layer 40 is connected to the back electrode layer 12, and the back electrode layer 12 has one concave portion so as to contact the conductive layer 40. It must be exposed at the bottom on the 22a side.
  • the insulating part 44 and the conductive layer 40 are formed over the entire width direction W of the substrate 10 of the solar battery cell 20a.
  • the solar cells 20 a to 20 d can be electrically connected in series, and the conductive layer 40 does not have to be formed over the entire width direction W of the substrate 10.
  • the conductive layer 40 in at least a part in the width direction W.
  • three conductive layers 40a may be formed in the width direction W with respect to the cell 20a.
  • the insulating portion 44 may not be continuously formed in the width direction W as long as the conductive layer 40a is formed so as not to contact the wall surface ⁇ .
  • the first conductive member 50 and the second conductive member 52 arranged at both ends of the solar cells connected in series are for taking out the electric power generated in the solar cells to the outside.
  • the first conductive member 50 and the second conductive member 52 are, for example, strip-shaped members that extend substantially linearly in the width direction of the substrate 10 and are connected to the right-side or left-end back electrode layer 12 respectively.
  • the first conductive member 50 and the second conductive member 52 are, for example, copper ribbons 50a and 52a covered with coating materials 50b and 52b of indium copper alloy.
  • the first conductive member 50 and the second conductive member 52 are connected to the back electrode layer 12 by ultrasonic solder, a conductive adhesive, a conductive tape, or the like.
  • the first conductive member 50 and the second conductive member 52 may be tin-plated copper ribbons.
  • the integrated solar cell 3 of this configuration when light is incident on the solar cells 20a to 20d from the transparent electrode layer 16 side, the light passes through the transparent electrode layer 16 and the buffer layer 14, and the photoelectric conversion layer 13 An electromotive force is generated, and for example, a current from the transparent electrode layer 16 toward the back electrode layer 12 is generated.
  • the electric power generated in the integrated solar cell 3 can be taken out of the solar cell 3 from the first conductive member 50 and the second conductive member 52.
  • the first conductive member 50 is a negative electrode and the second conductive member 52 is a positive electrode.
  • the first conductive member 50 and the second conductive member 52 have opposite polarities. It may be appropriately changed depending on the layer configuration, connection configuration, and the like of the solar cells 20a to 20d.
  • FIG. 4 and FIG. 4 and FIG. 14 are partial schematic cross-sectional views showing the manufacturing process, and show a portion that becomes an opening groove between some cells 20a and 20b.
  • the manufacturing method of the third embodiment is the same as the manufacturing method of the first embodiment with respect to steps a to c shown in FIG. 4, and the description of the manufacturing method of the first embodiment is incorporated.
  • the manufacturing process after d in FIG. 14 will be described.
  • an opening groove 22 having a depth parallel to the separation groove 21 and reaching the surface position of the back electrode layer 12 is formed.
  • the opening groove portion 22 is formed so as to leave a part 24 of the stacked body S at a position spaced from both walls ⁇ and ⁇ of the opening groove portion 22 in the groove width direction of the opening groove portion 22.
  • two recesses (grooves) 22a and 22b having a depth reaching the surface position of the back electrode layer 12 from above the stacked body S at a predetermined interval are formed by laser or mechanical scribing at a desired opening groove forming position.
  • the opening groove portion 22 in which a part 24 of the stacked body S is left between the two grooves 22a and 22b can be formed.
  • the opening groove 22 is formed such that the first groove 22a is wider than the second groove 22b.
  • the back electrode layer 12 is exposed in the first and second grooves 22 a and 22 b sandwiching the part 24 of the laminated body of the formed opening groove 22, and is partially embedded in the separation groove 21.
  • the photoelectric conversion layer 13 is exposed.
  • the photoelectric conversion layer 13 is left as a part 24 of the laminate, but the buffer layer 14 and the transparent electrode layer 16 remain in this part 24. Good.
  • the insulating ink that becomes the insulating portion 44 is deposited in the vicinity of the wall surface ⁇ so that one wall surface ⁇ of the opening groove portion 22 is covered. Then, the insulating portion 44 is formed by performing a thermosetting process and a photocuring process according to the ink material.
  • the conductive layer 40 is formed on the insulating portion 44 so as to be in contact with the back electrode layer 12 of the other cell 20 b from the transparent electrode layer 16 of the one cell 20 a.
  • the other cell in which the conductive ink (conductive paste) is exposed in the first groove 22a from the transparent electrode layer 16 of the one cell 20a through the insulating portion 44 by using the inkjet method.
  • the droplets are ejected in a range extending to the back electrode layer 12 of 20b.
  • the conductive paste is ejected into the first groove 22a, the conductive paste is blocked by the stopper portion 24 and is prevented from spreading toward the second groove 22b. That is, it is possible to prevent the conductive ink from contacting the wall surface ⁇ of the other solar battery cell 20b. Thereby, the internal leak of the photovoltaic cell 20b is prevented.
  • the conductive layer 40 which electrically connects the transparent electrode 30 of the solar battery cell 20a and the back electrode 12 of the solar battery cell 20b is formed.
  • the conductive layer 40 is regulated by the stopper portion 24.
  • the conductive layer 40 is formed on the insulating portion 44, the conductive layer 40 is not in contact with the wall surface ⁇ , so that the internal leakage current of the solar battery cell having the wall surface ⁇ is prevented.
  • an integrated solar cell 3 to which a plurality of solar cells 20a to 20d are connected as shown in FIG. 11 can be manufactured.
  • the cells are connected by the opening groove 22, so that the solar cell per unit area is compared with the integrated solar cell having three separation grooves.
  • the power generation efficiency can be improved by increasing the area of the battery cell.
  • the opening groove portion 22 is provided with the stopper portion 24 to suppress the spreading of the conductive ink, the width of the opening groove portion 22 can be shortened, and the power generation efficiency per unit area can be further improved. .
  • the laminated body S having other layers constituting the solar battery cell is continuously formed, and then the opening groove portion 22 and the stopper portion 24 are formed.
  • the back electrode is scribed before the photoelectric conversion layer is formed, power necessary for scribing the back electrode can be suppressed, and damage to the substrate due to high output power can be prevented. Yield can be improved.
  • an integrated solar cell provided with a film insulating part 42 by forming a film insulating part 42 covering the conductive layer 40 may be used.
  • the film insulation part 42 is provided, the same effect as the case of 1st Embodiment can be acquired.
  • the laser beam used for laser scribing is, for example, pulse-oscillated.
  • the pulse width of the laser beam is preferably 100 ns or less, and more preferably 40 ns or less, so that the end of the removal portion does not rise.
  • an Nd: YAG laser or an Nd: YVO 4 laser excited by a laser diode having a wavelength of 1.06 ⁇ m and a pulse width of 40 ns or less can be used.
  • the laser beam used for laser scribing includes laser harmonics (second harmonic (wavelength is about 0.53 ⁇ m), third harmonics) generated by laser diode excitation using Nd: YAG, Nd: YVO 4 for the laser crystal. Harmonics (wavelength is about 0.355 ⁇ m) can also be used.
  • a known device used for mechanical scribing can be used.
  • a scribe groove having a width of 10 to 30 ⁇ m by laser scribe and a scribe groove having a width of 30 to 100 ⁇ m by mechanical scribe.
  • a flexible substrate when used as the substrate 10, it can be formed by combining a roll-to-roll method and a single wafer method.
  • the back electrode layer 12 is formed on the substrate 10, the separation groove 21 is formed, and the photoelectric conversion layer 13 is formed by a roll-to-roll method, then cut into a predetermined size, and the buffer layer 14. And formation of the transparent electrode layer 16 is implemented by a single wafer type.
  • the process of forming the back electrode layer 12 on the substrate 10, forming the separation groove 21, and forming the photoelectric conversion layer 13 and the buffer layer 14 is performed by a roll-to-roll method.
  • the transparent electrode layer 16 is cut and formed in a single wafer mode.
  • the back electrode layer 12 is formed on the substrate 10, the separation groove 21 is formed, the photoelectric conversion layer 13, the buffer layer 14, and the transparent electrode layer 16 are formed by a roll-to-roll method, and then have a predetermined size. Then, the above integration process is performed in a single wafer mode.
  • the substrate 10 is not particularly limited as long as the surface is an insulating layer, such as an insulating substrate such as glass or polyimide, or a metal substrate such as stainless steel having an insulating layer formed on the surface.
  • an insulating layer such as an insulating substrate such as glass or polyimide, or a metal substrate such as stainless steel having an insulating layer formed on the surface.
  • an anodized substrate in which an anodized film (insulating film) mainly composed of Al 2 O 3 is formed on at least one surface side of an Al base material mainly composed of Al, Fe is mainly used.
  • An anodic oxide film mainly composed of Al 2 O 3 was formed on at least one surface side of a composite base material in which an Al material composed mainly of Al was composited on at least one surface side of the Fe material as a component.
  • An anodized substrate on which an anodized film is formed is preferable.
  • a soda lime glass (SLG) layer may be provided on the anodized film.
  • SSG soda lime glass
  • the first electrode layer (back electrode) 12 is preferably made of, for example, Mo, Cr, or W, and a combination thereof, and particularly preferably made of Mo.
  • the back electrode layer 12 may have a single-layer structure or a laminated structure such as a two-layer structure.
  • the formation method in particular of the back surface electrode layer 12 is not restrict
  • the back electrode layer 12 generally has a thickness of about 800 nm, but the back electrode layer 12 preferably has a thickness of 200 nm to 1000 nm (1 ⁇ m).
  • the material cost of the back electrode layer 12 can be reduced, and further, the formation speed of the back electrode layer 12 can be increased.
  • the main component of the photoelectric conversion layer 13 is not particularly limited and is preferably a compound semiconductor having at least one chalcopyrite structure because high photoelectric conversion efficiency can be obtained.
  • the Ib group element, the IIIb group element, and the VIb group More preferably, it is at least one compound semiconductor composed of an element.
  • At least one type Ib group element selected from the group consisting of Cu and Ag, and at least one type IIIb group element selected from the group consisting of Al, Ga, and In It is preferably at least one compound semiconductor comprising at least one VIb group element selected from the group consisting of S, Se, and Te.
  • Examples of the compound semiconductor CuAlS 2, CuGaS 2, CuInS 2, CuAlSe 2, CuGaSe 2, AgAlS 2, AgGaS 2, AgInS 2, AgAlSe 2, AgGaSe 2, AgInSe 2, AgAlTe 2, AgGaTe 2, AgInTe 2, Cu ( in, Al) Se 2, Cu (in, Ga) (S, Se) 2, Cu in 1-z in 1-x Ga x Se 2-y S y ( wherein, 0 ⁇ x ⁇ 1,0 ⁇ y ⁇ 2, 0 ⁇ z ⁇ 1) (CI (G) S), Ag (In, Ga) Se 2 , Ag (In, Ga) (S, Se) 2 and the like.
  • Cu 2 ZnSnS 4, Cu 2 ZnSnSe 4, Cu 2 ZnSn (S, Se) 4, may be.
  • semiconductors other than the I-III-VI group semiconductors include semiconductors composed of IIIb group elements and Vb group elements such as GaAs (III-V semiconductors), IIb group elements such as CdTe, (Cd, Zn) Te, and VIb. And semiconductors composed of group elements (II-VI group semiconductors).
  • the film formation method of the photoelectric conversion layer 13 is not particularly limited, and can be formed by a vacuum deposition method, a sputtering method, an MOCVD method, or the like.
  • a vacuum deposition method a sputtering method, an MOCVD method, or the like.
  • film formation methods for CIGS semiconductor layers multi-source simultaneous vapor deposition, selenization, sputtering, hybrid sputtering, canochemical process, and the like are known. Examples of other CIGS film formation methods include screen printing, proximity sublimation, MOCVD, and spray (wet film formation). Any film forming method may be used.
  • the buffer layer 14 is formed to protect the photoelectric conversion layer 13 when the transparent electrode layer 16 is formed and to transmit light incident on the transparent electrode layer 16 to the photoelectric conversion layer 13.
  • the buffer layer 14 is made of, for example, CdS, ZnS, ZnO, ZnMgO, ZnS (O, OH), or a combination thereof.
  • the buffer layer 14 preferably has a thickness of 10 nm to 2 ⁇ m, more preferably 15 to 200 nm.
  • the buffer layer 26 is formed by, for example, a CBD (chemical bath deposition) method, a solution growth method, or the like.
  • an insulating layer may be provided between the buffer layer 14 and the transparent conductive layer 16.
  • This insulating layer inhibits recombination of photoexcited electrons and holes, and contributes to improvement in power generation efficiency.
  • the composition of the insulating layer is not particularly limited, but i-ZnO, i-AlZnO (AZO), and the like are preferable.
  • the film thickness is not particularly limited, and is preferably 10 nm to 2 ⁇ m, more preferably 15 to 200 nm.
  • the film forming method is not particularly limited, but a sputtering method or an MOCVD method is suitable.
  • the buffer layer 14 is manufactured by the liquid phase method, it is also preferable to use the liquid phase method in order to simplify the manufacturing process.
  • the second electrode layer (transparent electrode layer) 16 may be composed of, for example, ZnO doped with Al, B, Ga, In or the like, ITO (indium tin oxide) or SnO 2 and a combination thereof. it can.
  • the transparent electrode layer 16 may have a single layer structure or a laminated structure such as a two-layer structure.
  • the thickness of the transparent electrode layer 16 is not particularly limited, and is preferably 50 nm to 2 ⁇ m, more preferably 0.3 to 1 ⁇ m.
  • the method for forming the transparent electrode layer 16 is not particularly limited, and can be formed by a vapor deposition method such as an electron beam evaporation method or a sputtering method.
  • An antireflection film such as MgF 2 may be formed on the transparent electrode layer 16.
  • insulating ink examples include insulating ink IJPR (solar ink), inkjet compatible polyimide ink Rixon coat (JNC), inkjet compatible UV curable ink Rixon coat (JNC), and insulating ink DPEI. (Daicel Chemical Industries) can be used.
  • IJPR solar ink
  • JNC inkjet compatible polyimide ink Rixon coat
  • JNC inkjet compatible UV curable ink Rixon coat
  • DPEI insulating ink DPEI.
  • Examples of the conductive ink for forming the conductive layer 40 include silver paste (NPS-J (product number, manufactured by Harima Chemicals)), transparent conductive ink (ClearOhm (registered trademark) (JNC)), silver nano ink (Daicel Chemical) Industrial), Cabot Conductive Ink CCI-300 can be used.
  • the above has mainly described materials and layer configurations suitable for the case where a compound semiconductor is used as a photoelectric conversion layer of a solar battery cell.
  • the present invention may use other than the compound semiconductor system as described above as the photoelectric conversion layer of the solar battery cell.
  • a photoelectric conversion layer an amorphous silicon (a-Si) thin film type photoelectric conversion layer, a tandem structure type thin film type photoelectric conversion layer (a-Si / a-SiGe tandem structure photoelectric conversion layer), a series connection structure (SCAF)
  • a thin film photoelectric conversion layer (a-Si serial connection structure photoelectric conversion layer), a thin film silicon thin film photoelectric conversion layer, a dye-sensitized thin film photoelectric conversion layer, or an organic thin film photoelectric conversion layer may be used.
  • a photoelectric conversion layer an amorphous silicon (a-Si) thin film type photoelectric conversion layer, a tandem structure type thin film type photoelectric conversion layer (a-Si / a-SiGe tandem structure photo
  • the first electrode layer provided on the substrate is made of an opaque material as the back electrode, and the second electrode formed on the photoelectric conversion layer is called a substrate type having a transparent structure.
  • the solar cell having the structure has been described, the present invention can be applied to a super straight type solar cell in which the first electrode layer is a transparent electrode and the second electrode layer is an opaque electrode.
  • the manufacturing method of the present invention is highly effective in manufacturing a solar cell having a substrate type structure in which the first electrode layer is made of metal or the like and is cured by a thermal history. Is.

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Abstract

Cette invention concerne un procédé de fabrication d'une cellule solaire de type mince présentant une efficacité de production améliorée et permettant de produire avec un nombre d'étapes réduit une structure intégrée à haute efficacité de génération d'énergie. Une première couche d'électrode (12) est formée sur un substrat (10) et une rainure de séparation (21) exposant la surface du substrat (10) à sa partie inférieure est formée à travers la première couche d'électrode (12). Un corps stratifié (S) est formé par stratification séquentielle d'une couche de conversion photoélectrique (13) et d'une seconde couche d'électrode (16) de façon à couvrir la première couche d'électrode (12) et la surface du substrat (10) exposée à travers la rainure de séparation (21). Une rainure ouverte (22) ayant une profondeur telle qu'elle atteint la surface de la première couche d'électrode (12) est formée parallèlement à la rainure de séparation (21). La rainure ouverture (22) est formée de telle façon qu'une partie (24) du corps stratifié (S) reste séparée des deux parois (α, β). Une partie de connexion (40) est formée pour mettre en contact électrique les éléments de conversion photoélectrique attenants à travers la rainure ouverte (22).
PCT/JP2013/000190 2012-01-18 2013-01-17 Procédé de fabrication d'une cellule solaire intégrée WO2013108623A1 (fr)

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EP3336904A1 (fr) * 2016-12-16 2018-06-20 Armor Procédé de fabrication d'un module photovoltaïque et module photovoltaïque ainsi obtenu

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WO2015177899A1 (fr) * 2014-05-22 2015-11-26 東芝三菱電機産業システム株式会社 Procédé de formation en film de couche tampon et couche tampon
EP3599648A1 (fr) * 2018-07-25 2020-01-29 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Dispositif photovoltaïque et son procédé de fabrication
TWI798951B (zh) * 2021-11-22 2023-04-11 凌巨科技股份有限公司 半穿透式太陽能電池

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EP3336904A1 (fr) * 2016-12-16 2018-06-20 Armor Procédé de fabrication d'un module photovoltaïque et module photovoltaïque ainsi obtenu
FR3060854A1 (fr) * 2016-12-16 2018-06-22 Armor Procede de fabrication d'un module photovoltaique et module photovoltaique ainsi obtenu
US10651330B2 (en) 2016-12-16 2020-05-12 Armor Method for manufacturing a photovoltaic module and photovoltaic module thus obtained

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