WO2013103116A1 - Ruban de traitement de plaquette et procédé de fabrication d'un dispositif semi-conducteur utilisant celui-ci - Google Patents

Ruban de traitement de plaquette et procédé de fabrication d'un dispositif semi-conducteur utilisant celui-ci Download PDF

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Publication number
WO2013103116A1
WO2013103116A1 PCT/JP2012/083646 JP2012083646W WO2013103116A1 WO 2013103116 A1 WO2013103116 A1 WO 2013103116A1 JP 2012083646 W JP2012083646 W JP 2012083646W WO 2013103116 A1 WO2013103116 A1 WO 2013103116A1
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Prior art keywords
wafer
adhesive layer
processing tape
wafer processing
tape
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PCT/JP2012/083646
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English (en)
Japanese (ja)
Inventor
佐野　透
邦彦 石黒
尚明 三原
千佳子 井之前
朗 矢吹
一貴 建部
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古河電気工業株式会社
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Application filed by 古河電気工業株式会社 filed Critical 古河電気工業株式会社
Priority to KR1020137033285A priority Critical patent/KR101545805B1/ko
Priority to CN201280017728.4A priority patent/CN103460348B/zh
Priority to SG2013082540A priority patent/SG194831A1/en
Publication of WO2013103116A1 publication Critical patent/WO2013103116A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/62—Polymers of compounds having carbon-to-carbon double bonds
    • C08G18/6216—Polymers of alpha-beta ethylenically unsaturated carboxylic acids or of derivatives thereof
    • C08G18/622—Polymers of esters of alpha-beta ethylenically unsaturated carboxylic acids
    • C08G18/6225—Polymers of esters of acrylic or methacrylic acid
    • C08G18/6229—Polymers of hydroxy groups containing esters of acrylic or methacrylic acid with aliphatic polyalcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/67—Unsaturated compounds having active hydrogen
    • C08G18/6705—Unsaturated polymers not provided for in the groups C08G18/671, C08G18/6795, C08G18/68 or C08G18/69
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/72—Polyisocyanates or polyisothiocyanates
    • C08G18/80—Masked polyisocyanates
    • C08G18/8003—Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen
    • C08G18/8006—Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen with compounds of C08G18/32
    • C08G18/8009—Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen with compounds of C08G18/32 with compounds of C08G18/3203
    • C08G18/8022—Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen with compounds of C08G18/32 with compounds of C08G18/3203 with polyols having at least three hydroxy groups
    • C08G18/8029—Masked aromatic polyisocyanates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/81—Unsaturated isocyanates or isothiocyanates
    • C08G18/8108—Unsaturated isocyanates or isothiocyanates having only one isocyanate or isothiocyanate group
    • C08G18/8116—Unsaturated isocyanates or isothiocyanates having only one isocyanate or isothiocyanate group esters of acrylic or alkylacrylic acid having only one isocyanate or isothiocyanate group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L75/00—Compositions of polyureas or polyurethanes; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
    • C09J161/20—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C09J161/26—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds
    • C09J161/28—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds with melamine
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J175/00—Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
    • C09J175/04—Polyurethanes
    • C09J175/14—Polyurethanes having carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to an expandable wafer processing tape and the like used when dividing an adhesive layer along a chip by an expand in a manufacturing process of a semiconductor device.
  • a back grinding process for grinding the back surface of the wafer to reduce the thickness of the wafer after the circuit pattern is formed, and adhesive and stretchable wafer processing tape is attached to the back surface of the wafer.
  • a dicing process for dividing the wafer into chips, an expanding process for expanding (expanding) the wafer processing tape, a pickup process for picking up the divided chips, and bonding the picked-up chips to a lead frame or a package substrate (Alternatively, in a stacked package, a die bonding (mounting) step is performed in which chips are stacked and bonded together.
  • a surface protective tape is used to protect the circuit pattern forming surface (wafer surface) of the wafer from contamination.
  • the wafer processing tape (dicing / die bonding tape) described below is bonded to the backside of the wafer and then applied to the suction table for wafer processing.
  • the tape side is fixed, the surface protective tape is subjected to a treatment for reducing the adhesive strength to the wafer, and then the surface protective tape is peeled off.
  • the wafer from which the surface protective tape has been peeled is then picked up from the suction table with the wafer processing tape being bonded to the back surface, and is subjected to the next dicing process.
  • the treatment for reducing the adhesive force is an energy ray irradiation treatment
  • the surface protection tape is made of a thermosetting component, Heat treatment.
  • a wafer processing tape in which an adhesive layer and an adhesive layer are laminated in this order on a base film is used.
  • an adhesive layer of a wafer processing tape is bonded to the back surface of the wafer to fix the wafer, and the wafer and the adhesive layer are diced into chips using a dicing blade.
  • an expanding process is performed to expand the distance between the chips by expanding the tape in the radial direction of the wafer. This expanding process is performed in the subsequent pick-up process in order to improve chip recognition by a CCD camera or the like and to prevent chip breakage caused by contact between adjacent chips when picking up a chip.
  • the chip is peeled off from the adhesive layer together with the adhesive layer in the pickup process and picked up, and directly attached to the lead frame, the package substrate, etc. in the mounting process.
  • wafer processing tape it is possible to directly bond chips with an adhesive layer to lead frames, package substrates, etc., so the adhesive coating process and die bonding to each chip separately
  • the step of adhering the film can be omitted.
  • the wafer and the adhesive layer are diced together using the dicing blade, and therefore not only the wafer cutting waste but also the adhesive layer cutting waste is generated. Then, when the cutting waste of the adhesive layer is clogged in the groove of the wafer generated by dicing, chips are stuck to each other to cause a pick-up failure and the like, and there is a problem that the manufacturing yield of the semiconductor device is lowered.
  • Patent Document 1 a method for dividing the adhesive layer using the tension at the time of expansion, no cutting waste of the adhesive is generated, and there is no adverse effect in the pickup process.
  • a so-called stealth dicing method that can cut a wafer in a non-contact manner using a laser processing apparatus has been proposed as a wafer cutting method.
  • a stealth dicing method an adhesive layer (die bond resin layer) is interposed, a focus light is adjusted inside a semiconductor substrate to which a sheet is attached, and laser light is irradiated.
  • a method for cutting a semiconductor substrate comprising the steps of:
  • Patent Document 3 discloses a process of attaching an adhesive layer (adhesive film) for die bonding to the back surface of a wafer, and the adhesive layer includes The process of pasting a stretchable protective adhesive tape on the adhesive layer side of the bonded wafer, and irradiating laser light along the street from the surface of the wafer to which the protective adhesive tape was bonded to each chip The process of dividing, the process of expanding the protective adhesive tape to give tensile force to the adhesive layer, breaking the adhesive layer for each chip, and protecting the chip to which the broken adhesive layer is bonded A wafer dividing method including a step of separating from a tape has been proposed.
  • the substrate film is used to reliably cut the adhesive layer along the chip on the wafer to be used.
  • the uniform and isotropic expandability of the adhesive layer must be sufficiently transmitted to the adhesive layer. This is because when a deviation occurs at the interface between the adhesive layer and the pressure-sensitive adhesive layer, sufficient tensile force is not propagated to the adhesive layer at that location, and the adhesive layer cannot be divided.
  • the present invention provides a wafer processing tape that does not cause a shift at the interface between the adhesive layer and the pressure-sensitive adhesive layer due to expansion, has a uniform expandability suitable for the process of dividing the adhesive layer, and has excellent pickup properties. It is an issue to provide.
  • the present invention includes a base film, a pressure-sensitive adhesive layer formed on the base film, and an adhesive layer formed on the pressure-sensitive adhesive layer.
  • the shearing force at 25 ° C. of the pressure-sensitive adhesive layer and the adhesive layer is 0.2 N / mm 2 or more, and the peeling speed is 300 mm in a standard state in accordance with JIS-Z0237 after irradiation with an energy beam of 200 mJ / cm 2.
  • the tape for wafer processing is characterized in that the peeling force between the pressure-sensitive adhesive layer and the adhesive layer at a peeling angle of 180 ° / min is 0.3 N / 25 mm or less.
  • the shear force of the pressure-sensitive adhesive layer and the adhesive layer at 25 ° C. is 0.2 N / mm 2 or more and 0.5 N / mm 2 or less, and the pressure-sensitive adhesive layer has a gel fraction.
  • the pressure-sensitive adhesive composition is composed of a pressure-sensitive adhesive composition that is 60% or more, and the pressure-sensitive adhesive composition contains, as a base resin, 60 mol% or more of a (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms, and an iodine value.
  • the pressure-sensitive adhesive composition is selected from the group consisting of polyisocyanates, melamine-formaldehyde resins, and epoxy resins, and contains a polymer having 5-30 energy ray-curable carbon-carbon double bonds. It is particularly preferred if it contains at least one compound.
  • the reason is that it does not peel off from the adhesive layer at the time of dicing, has a retainability that does not cause a defect such as chip jumping, and a property that facilitates peeling from the adhesive layer at the time of pickup, Wafer processing that avoids the possibility that low molecular weight components of the pressure-sensitive adhesive layer will float off the pressure-sensitive adhesive surface and contaminate the chip surface or the adhesive layer, is easy to manufacture, and improves the cohesive strength of the pressure-sensitive adhesive This is because a tape can be obtained.
  • the present invention provides, as a second aspect, a method for manufacturing a semiconductor device using the wafer processing tape according to the first aspect, (A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed; (B) a back grinding process for grinding the back surface of the wafer; (C) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .; (D) peeling the surface protection tape from the wafer surface; (E) irradiating a laser beam to a portion to be divided of the wafer, and forming a modified region by multiphoton absorption inside the wafer; (F) Expanding the wafer processing tape to divide the wafer and the adhesive layer of the wafer processing tape along a cutting line to obtain a plurality of chips with the adhesive layer Process, (G) In the expanded wafer processing tape, by heating and shrinking a portion that does not overlap the chip, the slack generated in the expanding step
  • the present invention provides, as a third aspect, a method for manufacturing a semiconductor device using the wafer processing tape according to the first aspect, (A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed; (B) a back grinding process for grinding the back surface of the wafer; (C) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .; (D) peeling the surface protection tape from the wafer surface; (E) irradiating a laser beam along a cutting line on the wafer surface, and cutting the wafer into chips; (F) Expanding the wafer processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer; (G) In the expanded wafer processing tape, by heating and shrinking a portion that does not overlap the chip, the slack generated in the expanding step is removed, and the interval between the chips is maintained; (H) picking up the chip with the adhesive layer
  • this invention is the method of manufacturing a semiconductor device using the tape for wafer processing of the said 1st aspect as a 4th aspect, (A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed; (B) a back grinding process for grinding the back surface of the wafer; (C) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .; (D) peeling the surface protection tape from the wafer surface; (E) cutting the wafer along a cutting line using a dicing blade and cutting the wafer into chips; (F) Expanding the wafer processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer; (G) In the expanded wafer processing tape, by heating and shrinking a portion that does not overlap the chip, the slack generated in the expanding step is removed, and the interval between the chips is maintained; (H) picking up the chip with the adhesive layer from the adhesive
  • a fifth aspect of the present invention is a method of manufacturing a semiconductor device using the wafer processing tape according to the first aspect, (A) cutting the wafer on which the circuit pattern is formed, using a dicing blade, along a line to be cut to a depth less than the thickness of the wafer; (B) bonding a surface protective tape to the wafer surface; (C) a back grinding process for grinding the wafer back surface and dividing it into chips; (D) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer divided into the chips while the wafer is heated to 70 to 80 ° C .; (E) peeling the surface protection tape from the wafer surface divided into the chips; (F) Expanding the wafer processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer; (G) in the expanded wafer processing tape, removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the chip, and maintaining the interval between the chips; (H) picking up
  • the base film is uniformly and isotropically expandable when expanded. Is sufficiently propagated to the adhesive layer through the pressure-sensitive adhesive layer, and the adhesive layer is efficiently divided. Further, the peeling force between the pressure-sensitive adhesive layer and the adhesive layer at a peeling speed of 300 mm / min and a peeling angle of 180 ° in a standard state in accordance with JIS-Z0237 after irradiation with an energy beam of 200 mJ / cm 2 is 0.3 N / Since it is 25 mm or less, the peeling force is sufficiently reduced and the pickup performance is good.
  • (B) It is sectional drawing which shows the process of dividing a wafer into a chip
  • (C) It is sectional drawing which shows the tape for wafer processing after expansion, an adhesive bond layer, and a chip
  • the measuring method of a shear force it is sectional drawing which shows the state which bonded the auxiliary
  • FIG. 1 is a cross-sectional view showing a wafer processing tape 10 according to an embodiment of the present invention.
  • the wafer processing tape 10 of the present invention is one in which the adhesive layer 13 is divided along the chip when the wafer is divided into chips by expanding.
  • the wafer processing tape 10 includes a base film 11, a pressure-sensitive adhesive layer 12 provided on the base film 11, and an adhesive layer 13 provided on the pressure-sensitive adhesive layer 12.
  • the back surface of the wafer is pasted on 13.
  • Each layer may be cut (precut) into a predetermined shape in advance according to the use process and the apparatus.
  • the wafer processing tape 10 of the present invention may be in a form cut for each wafer, or a long sheet in which a plurality of pieces cut for each wafer are formed,
  • the form wound up in roll shape may be sufficient. Below, the structure of each layer is demonstrated.
  • the base film 11 is not particularly limited as long as it has uniform and isotropic expandability in the expanding process.
  • the cross-linked resin has a greater restoring force against tension than the non-cross-linked resin, and has a large shrinkage stress when heat is applied to the stretched state after the expanding step. Therefore, the slack generated in the tape after the expanding step can be removed by heating and shrinking, whereby the tape can be tensioned and the interval between the individual chips can be stably maintained. Therefore, a crosslinked resin, especially a thermoplastic crosslinked resin, is preferably used as the base film.
  • thermoplastic crosslinked resin examples include an ionomer resin obtained by crosslinking an ethylene- (meth) acrylic acid binary copolymer or ethylene- (meth) acrylic acid- (meth) acrylic acid with a metal ion. Is done. These are particularly suitable in that they can be expanded uniformly and are suitable for the expanding process and have a strong restoring force when heated by crosslinking.
  • the metal ion contained in the ionomer resin is not particularly limited, but zinc ion having particularly low elution property is preferable from the viewpoint of low contamination.
  • thermoplastic crosslinked resin includes a low density polyethylene having a specific gravity of 0.910 to less than 0.930 or an ultra-low density polyethylene having a specific gravity of less than 0.910, such as an electron beam. What was bridge
  • crosslinked by irradiating an energy ray is also suitable.
  • thermoplastic cross-linked resin has a certain uniform expansibility since a cross-linked site and a non-cross-linked site coexist in the resin. Further, since a strong restoring force is exerted during heating, it is also suitable for removing tape slack generated in the expanding process. By appropriately adjusting the amount of energy rays irradiated to the low density polyethylene or the ultra low density polyethylene, a resin having sufficient uniform expandability can be obtained.
  • thermoplastic cross-linked resin in addition to the above-mentioned ionomer resin and energy-cross-linked polyethylene, those obtained by irradiating an ethylene-vinyl acetate copolymer with an energy beam such as an electron beam are also suitable.
  • This thermoplastic cross-linked resin is suitable because it can remove the slack of the tape generated in the expanding process because it has a strong restoring force when heated.
  • the base film 11 is a single layer, it is not limited to this, The multilayer structure which laminated
  • the thickness of the base film 11 is not particularly defined, but it is preferably about 50 to 200 ⁇ m, more preferably 100 to 150 ⁇ m, as the thickness that is easy to stretch in the expanding process of the wafer processing tape 10 and has sufficient strength not to break. .
  • a conventionally known extrusion method, laminating method, or the like can be used as a method for producing the multi-layer base film 11.
  • laminating method an adhesive may be interposed between the layers.
  • a conventionally well-known adhesive agent can be used as an adhesive agent.
  • the pressure-sensitive adhesive layer 12 can be formed by applying a pressure-sensitive adhesive composition to the base film 11.
  • the pressure-sensitive adhesive layer 12 constituting the wafer processing tape 10 of the present invention has a holding property that does not cause separation from the adhesive layer 13 during dicing and does not cause defects such as chip jumping, and an adhesive during pickup. Any material may be used as long as it can be easily separated from the layer 13. Specifically, the shearing force at 25 ° C.
  • the peeling force (peeling adhesive strength) between the adhesive layer 12 and the adhesive layer 13 at a peeling speed of 300 mm / min and a peeling angle of 180 ° at a temperature of 23 ⁇ 1 ° C. and a relative humidity of 50 ⁇ 5% is 0.3 N /
  • the pressure-sensitive adhesive layer 12 is 25 mm or less.
  • the shearing force at the interface between the pressure-sensitive adhesive layer 12 and the adhesive layer 13 is more preferably 0.2 N / mm 2 or more and 0.5 N / mm 2 or less.
  • the peeling force between the pressure-sensitive adhesive layer 12 and the adhesive layer 13 there is no particular lower limit for the peeling force between the pressure-sensitive adhesive layer 12 and the adhesive layer 13, but if the peeling force is too small, the chip may be peeled off by the pick-up process or the chip may fly during expansion in the pick-up process. Further, since there is a risk that peripheral chips other than the predetermined chip may be peeled off at the time of picking up, and jumping may occur, so that 0.03 N / 25 mm or more is more preferable.
  • the configuration of the pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer 12 is not particularly limited, but in order to improve the pick-up property after dicing, an energy ray-curable one is preferable, and after curing, A material that can be easily peeled off from the adhesive layer 13 is preferable.
  • the pressure-sensitive adhesive composition contains 60 mol% or more of (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms as the base resin, and has an iodine value of 5 to 30. -What has a polymer (A) which has a carbon double bond is illustrated.
  • the energy ray means a light ray such as ultraviolet rays or ionizing radiation such as an electron beam.
  • the gel fraction is more preferably 60% or more. If the gel fraction is low, the degree of cross-linking of the resin is low and the amount of low molecular weight components increases, so the low molecular weight components may float on the surface of the adhesive and leave, leading to contamination of the chip surface or adhesive layer. Because. If the adhesive layer is contaminated, the adhesive layer may be peeled off during the wafer processing process, or low molecular weight components may be volatilized and voids may be formed during the thermocompression bonding process when the semiconductor chip is encapsulated with the mold resin. Sometimes.
  • the amount of energy ray-curable carbon-carbon double bonds introduced is preferably 5 to 30, more preferably 10 to 20, in terms of iodine value. This is because the polymer (A) itself is stable and easy to manufacture. Moreover, when the iodine value is less than 5, the effect of reducing the adhesive strength after irradiation with energy rays may not be sufficiently obtained. When the iodine value is larger than 30, the flowability of the adhesive after irradiation with energy rays becomes insufficient, and it becomes impossible to obtain a sufficient gap between the chips after the expansion of the wafer processing tape 10. Image recognition may be difficult.
  • the polymer (A) preferably has a glass transition temperature of ⁇ 70 ° C. to 15 ° C., more preferably ⁇ 66 ° C. to ⁇ 28 ° C. If the glass transition temperature is ⁇ 70 ° C. or higher, the heat resistance against energy radiation is sufficient, and if it is 15 ° C. or lower, the effect of preventing chip scattering after dicing on a wafer having a rough surface is obtained. It is done.
  • the polymer (A) may be produced by any method, for example, a polymer obtained by mixing an acrylic copolymer and a compound having an energy ray-curable carbon-carbon double bond, An acrylic copolymer having a functional group or a methacrylic copolymer having a functional group (A1), a functional group capable of reacting with the functional group, and an energy ray-curable carbon-carbon double bond What is obtained by reacting with a compound (A2) having a hydrogen atom is used.
  • methacrylic copolymer (A1) having the functional group a monomer (A1-1) having a carbon-carbon double bond such as an alkyl acrylate ester or an alkyl methacrylate ester, and carbon Examples thereof include those obtained by copolymerizing a monomer (A1-2) having a carbon double bond and having a functional group.
  • Monomer (A1-1) includes hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, lauryl acrylate or alkyl chain having an alkyl chain having 6 to 12 carbon atoms Examples thereof include pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, and similar methacrylates, which are monomers having 5 or less carbon atoms.
  • the monomer (A1-1) contains many components having an alkyl chain with a carbon number smaller than 6, the peeling force between the pressure-sensitive adhesive layer and the adhesive layer will increase, and in the pick-up process, such as chip cracking will occur. Problems may occur. Also, if there are many components having more than 12 carbon atoms, they tend to be solid at room temperature, so the processability is poor, and sufficient adhesive force between the pressure-sensitive adhesive layer and the adhesive layer cannot be obtained, resulting in deviation at the interface. In some cases, problems may occur when the adhesive layer is divided.
  • the glass transition temperature becomes lower as the monomer having a larger alkyl chain carbon number is used. Therefore, the pressure-sensitive adhesive composition having a desired glass transition temperature can be selected appropriately.
  • Product can be prepared.
  • a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene or acrylonitrile can be added for the purpose of improving various properties such as compatibility. In that case, these low molecular weight compounds are blended within a range of 5% by mass or less of the total mass of the monomer (A1-1).
  • examples of the functional group of the monomer (A1-2) include a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group.
  • Specific examples of the monomer (A1-2) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylate.
  • Glycol monomethacrylates N-methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride
  • acids fumaric anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, and allyl glycidyl ether.
  • examples of the functional group used include a hydroxyl group, an epoxy group, and an isocyanate group when the functional group of the compound (A1) is a carboxyl group or a cyclic acid anhydride group.
  • a hydroxyl group a cyclic acid anhydride group, an isocyanate group, and the like can be exemplified.
  • an amino group an epoxy group, an isocyanate group, and the like can be exemplified.
  • Carboxyl group, cyclic acid anhydride group, amino group and the like As specific examples of the compound (A2), the same compounds as listed in the specific examples of the monomer (A1-2) can be listed.
  • the compound (A2) a compound obtained by urethanizing a part of the isocyanate group of the polyisocyanate compound with a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond can also be used.
  • a desired product with respect to characteristics such as acid value or hydroxyl value can be produced. If the OH group is left so that the hydroxyl value of the polymer (A) is 5 to 100, the risk of pick-up mistakes can be further reduced by reducing the adhesive strength after irradiation with energy rays. Further, if the COOH group is left so that the acid value of the polymer (A) is 0.5 to 30, the effect of improving the restoring property of the pressure-sensitive adhesive layer after expanding the wafer processing tape of the present invention can be obtained. And preferred.
  • the hydroxyl value of the polymer (A) is too low, the effect of reducing the adhesive strength after irradiation with energy rays is not sufficient, and if too high, the fluidity of the adhesive after irradiation with energy rays tends to be impaired. . If the acid value is too low, the effect of improving the tape restoring property is not sufficient, and if it is too high, the fluidity of the pressure-sensitive adhesive tends to be impaired.
  • ketone-based, ester-based, alcohol-based and aromatic-based solvents can be used, among which toluene, acetic acid
  • a good solvent for an acrylic polymer such as ethyl, isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, and a solvent having a boiling point of 60 to 120 ° C. is preferable.
  • a radical generator such as an azobis type such as ⁇ , ⁇ '-azobisisobutylnitrile or an organic peroxide type such as benzoyl peroxide is usually used.
  • a catalyst and a polymerization inhibitor can be used in combination, and the polymer (A) having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time.
  • a mercaptan or carbon tetrachloride solvent it is preferable to use a mercaptan or carbon tetrachloride solvent. This reaction is not limited to solution polymerization, and other methods such as bulk polymerization and suspension polymerization may be used.
  • the polymer (A) can be obtained.
  • the molecular weight of the polymer (A) is preferably about 500,000 to 1,000,000. If it is less than 500,000, the cohesive force becomes small, and the expansion tends to cause a shift at the interface with the adhesive layer, and sufficient tensile force is not propagated to the adhesive layer, so that the adhesive layer is not divided. May be sufficient.
  • the molecular weight is preferably 500,000 or more. Further, if the molecular weight exceeds 1,000,000, there is a possibility of gelation at the time of synthesis and coating.
  • the molecular weight in this invention is a mass mean molecular weight of polystyrene conversion.
  • the resin composition constituting the pressure-sensitive adhesive layer 12 may further contain a compound (B) that acts as a crosslinking agent in addition to the polymer (A).
  • a compound (B) that acts as a crosslinking agent in addition to the polymer (A).
  • Good it is at least one compound selected from polyisocyanates, melamine / formaldehyde resins, and epoxy resins. These can be used alone or in combination of two or more.
  • This compound (B) reacts with the polymer (A) or the base film, and as a result, a pressure-sensitive adhesive mainly composed of the polymers (A) and (B) after coating the pressure-sensitive adhesive composition due to the resulting crosslinked structure.
  • the cohesive strength of can be improved.
  • the polyisocyanates are not particularly limited, and examples thereof include 4,4'-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4'-diphenyl ether diisocyanate, 4,4 '-[2,2-bis (4 -Phenoxyphenyl) propane] aromatic isocyanate such as diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate Lysine diisocyanate, lysine triisocyanate, and the like.
  • Coronate L (trade name, manufactured by Nippon Polyurethane Co., Ltd.) and the like are used. It can be.
  • Specific examples of the melamine / formaldehyde resin include Nicalac MX-45 (trade name, manufactured by Sanwa Chemical Co., Ltd.) and Melan (trade name, manufactured by Hitachi Chemical Co., Ltd.).
  • As the epoxy resin TETRAD-X (trade name, manufactured by Mitsubishi Chemical Corporation) or the like can be used. In the present invention, it is particularly preferable to use polyisocyanates.
  • the addition amount of the compound (B) is selected so that the blending ratio is 0.1 to 10 parts by mass, preferably 0.5 to 5 parts by mass with respect to 100 parts by mass of the polymer (A). By selecting within this range, it is possible to obtain an appropriate cohesive force, and since the crosslinking reaction does not proceed abruptly, workability such as blending and application of the adhesive is improved.
  • the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator (C).
  • a photopolymerization initiator (C) contained in the adhesive layer 12 A conventionally well-known thing can be used.
  • benzophenones such as benzophenone, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone, 4,4′-dichlorobenzophenone, acetophenones such as acetophenone and diethoxyacetophenone, 2-ethylanthraquinone, t- Examples include anthraquinones such as butylanthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triarylimidazole dimer (rophine dimer), acridine compounds, and the like.
  • the addition amount of the photopolymerization initiator (C) is preferably 0.1 to 10 parts by mass, more preferably 0.5 to 5 parts by mass with respect to 100 parts by mass of the polymer (A). .
  • the energy ray-curable pressure-sensitive adhesive used in the present invention can be blended with a tackifier, a tackifier, a surfactant, or other modifiers as necessary.
  • the thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, it is at least 5 ⁇ m, more preferably 10 ⁇ m or more.
  • the pressure-sensitive adhesive layer 12 may have a configuration in which a plurality of layers are laminated.
  • the adhesive layer 13 peels off from the adhesive layer 12 and adheres to the chip when the chip is picked up after the wafer is bonded and diced. And it is used as an adhesive agent when fixing a chip
  • the adhesive layer 13 is not particularly limited, but may be a film-like adhesive generally used for wafers. Acrylic adhesive, epoxy resin / phenolic resin / acrylic resin blend system An adhesive or the like is preferable.
  • the thickness may be appropriately set, but is preferably about 5 to 100 ⁇ m.
  • the adhesive layer 13 may be formed by laminating a film formed in advance (hereinafter referred to as an adhesive film) directly or indirectly on the base film 11. .
  • the laminating temperature is preferably in the range of 10 to 100 ° C., and a linear pressure of 0.01 to 10 N / m is preferably applied.
  • Such an adhesive film may be one in which the adhesive layer 13 is formed on the separator. In that case, the separator may be peeled off after lamination, or the cover of the wafer processing tape 10 may be used as it is. You may use as a film and peel when bonding a wafer.
  • the said adhesive film may be laminated
  • the adhesive film according to a wafer is laminated
  • the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using a pre-cut adhesive film, and the ring is peeled off when the tape is peeled off after use. The effect that the adhesive residue to the frame 20 hardly occurs is obtained.
  • the wafer processing tape 10 of the present invention is used in a method for manufacturing a semiconductor device including an expanding process for dividing the adhesive layer 13 by at least expansion. Therefore, other processes and the order of processes are not particularly limited. For example, it can be suitably used in the following semiconductor device manufacturing methods (A) to (D).
  • Manufacturing method of semiconductor device (A) (A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed; (B) a back grinding process for grinding the back surface of the wafer; (C) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .; (D) peeling the surface protection tape from the wafer surface; (E) irradiating a laser beam to a portion to be divided of the wafer, and forming a modified region by multiphoton absorption inside the wafer; (F) Expanding the wafer processing tape to divide the wafer and the adhesive layer of the wafer processing tape along a cutting line to obtain a plurality of chips with the adhesive layer Process, (G) In the expanded wafer processing tape, by heating and shrinking a portion that does not overlap the chip, the slack generated in the expanding step is removed, and the interval between the chips is maintained; (H) picking up the chip with the adhesive layer from the
  • Manufacturing method of semiconductor device (B) (A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed; (B) a back grinding process for grinding the back surface of the wafer; (C) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .; (D) peeling the surface protection tape from the wafer surface; (E) irradiating a laser beam along a cutting line on the wafer surface, and cutting the wafer into chips; (F) Expanding the wafer processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer; (G) In the expanded wafer processing tape, by heating and shrinking a portion that does not overlap the chip, the slack generated in the expanding step is removed, and the interval between the chips is maintained; (H) picking up the chip with the adhesive layer from the adhesive layer of the wafer processing tape; A method of manufacturing a semiconductor device including:
  • Manufacturing method of semiconductor device (C) (A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed; (B) a back grinding process for grinding the back surface of the wafer; (C) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .; (D) peeling the surface protection tape from the wafer surface; (E) cutting the wafer along a cutting line using a dicing blade and cutting the wafer into chips; (F) Expanding the wafer processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer; (G) In the expanded wafer processing tape, by heating and shrinking a portion that does not overlap the chip, the slack generated in the expanding step is removed, and the interval between the chips is maintained; (H) picking up the chip with the adhesive layer from the adhesive layer of the wafer processing tape; A method of manufacturing a semiconductor device including:
  • Manufacturing method of semiconductor device (D) (A) cutting the wafer on which the circuit pattern is formed, using a dicing blade, along a line to be cut to a depth less than the thickness of the wafer; (B) bonding a surface protective tape to the wafer surface; (C) a back grinding process for grinding the wafer back surface and dividing it into chips; (D) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer divided into the chips while the wafer is heated to 70 to 80 ° C .; (E) peeling the surface protection tape from the wafer surface divided into the chips; (F) Expanding the wafer processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer; (G) in the expanded wafer processing tape, removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the chip, and maintaining the interval between the chips; (H) picking up the chip with the adhesive layer from the adhesive layer of the wafer processing tape; A method of manufacturing
  • a method of using the tape when the wafer processing tape 10 of the present invention is applied to the method (A) for manufacturing a semiconductor device will be described with reference to FIGS.
  • a surface protection tape 14 for protecting a circuit pattern containing an ultraviolet curable component in an adhesive is bonded to the surface of a wafer W on which a circuit pattern is formed. Perform back grinding process to grind.
  • the wafer processing tape 10 is bonded to the back side of the wafer W.
  • the wafer processing tape 10 used here is obtained by laminating an adhesive film that has been cut (precut) in advance in a shape corresponding to the wafer W to be bonded, and the adhesive layer on the surface to be bonded to the wafer W.
  • the adhesive layer 12 is exposed around the area where 13 is exposed.
  • the portion of the wafer processing tape 10 where the adhesive layer 13 is exposed and the back surface of the wafer W are bonded together, and the portion where the adhesive layer 12 around the adhesive layer 13 is exposed and the ring frame 20 are bonded together.
  • the heater table 25 is set to 70 to 80 ° C., and thus heat bonding is performed.
  • the wafer W to which the wafer processing tape 10 is bonded is unloaded from the heater table 25 and placed on the suction table 26 with the wafer processing tape 10 side down as shown in FIG. Then, from the upper side of the wafer W sucked and fixed to the suction table 26, for example, the substrate surface side of the surface protective tape 14 is irradiated with ultraviolet rays of 1000 mJ / cm 2 using the energy ray light source 27, and the surface protective tape 14 The adhesive strength to the wafer W is reduced, and the surface protection tape 14 is peeled off from the surface of the wafer W.
  • a laser beam is irradiated on a portion to be divided of the wafer W to form a modified region 32 by multiphoton absorption inside the wafer W.
  • the wafer processing tape 10 to which the wafer W and the ring frame 20 are bonded is placed on the stage 21 of the expanding apparatus with the base film 11 side facing down. .
  • the hollow cylindrical push-up member 22 of the expanding device is raised, and the wafer processing tape 10 is expanded (expanded).
  • the expanding speed is, for example, 5 to 500 mm / sec
  • the expanding amount (push-up amount) is, for example, 5 to 25 mm.
  • the wafer processing tape 10 is stretched in the radial direction of the wafer W, so that the wafer W is divided into chips 34 starting from the modified region 32.
  • the adhesive layer 13 elongation (deformation) due to expansion is suppressed at the portion bonded to the back surface of the wafer W, and no breakage occurs.
  • the adhesive layer 13 is also cut off together with the wafer W. Thereby, the some chip
  • the push-up member 22 is returned to the original position, the slack of the wafer processing tape 10 generated in the previous expanding process is removed, and the distance between the chips 34 is stably maintained.
  • Perform the process for example, warm air of 90 to 120 ° C. is used in the annular heat shrinkage region 28 between the region where the chip 34 exists in the wafer processing tape 10 and the ring frame 20 by using the warm air nozzle 29. Is applied to heat and shrink the base film 11 to tension the wafer processing tape 10.
  • the adhesive layer 12 is subjected to an energy ray curing process or a thermosetting process to weaken the adhesive force of the adhesive layer 12 to the adhesive layer 13, and then the chip 34 is picked up.
  • acrylic copolymer (a-1) As the acrylic copolymer (A1) having a functional group, a copolymer comprising 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and acrylic acid, the ratio of 2-ethylhexyl acrylate being 60 mol%, and the weight average molecular weight being 800,000 was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value was 20, and an acrylic copolymer (a-) having a glass transition temperature of ⁇ 60 ° C., a hydroxyl value of 60 mgKOH / g, and an acid value of 5 mgKOH / g. 1) was prepared.
  • (A-2) As the acrylic copolymer (A1) having a functional group, a copolymer comprising 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and acrylic acid, the ratio of 2-ethylhexyl acrylate being 80 mol%, and the weight average molecular weight being 700,000 was prepared.
  • 2-isocyanatoethyl methacrylate was added so that the iodine value would be 15, and an acrylic copolymer (a-) having a glass transition temperature of ⁇ 70 ° C., a hydroxyl value of 20 mgKOH / g, and an acid value of 5 mgKOH / g. 2) was prepared.
  • (A-3) As the acrylic copolymer (A1) having a functional group, a copolymer composed of dodecyl acrylate, 2-hydroxyethyl acrylate and acrylic acid and having a dodecyl acrylate ratio of 60 mol% and a mass average molecular weight of 800,000 was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value would be 20, and an acrylic copolymer (a-) having a glass transition temperature of ⁇ 5 ° C., a hydroxyl value of 60 mgKOH / g, and an acid value of 5 mgKOH / g. 3) was prepared.
  • (A-4) As the acrylic copolymer (A1) having a functional group, a copolymer composed of lauryl acrylate, 2-hydroxyethyl acrylate and acrylic acid and having a lauryl acrylate ratio of 60 mol% and a mass average molecular weight of 800,000 was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value was 20, and an acrylic copolymer (a-4 having a glass transition temperature of 5 ° C., a hydroxyl value of 60 mgKOH / g, and an acid value of 5 mgKOH / g) ) was prepared.
  • (A-5) As the acrylic copolymer (A1) having a functional group, a copolymer composed of lauryl acrylate, 2-hydroxyethyl acrylate and acrylic acid and having a lauryl acrylate ratio of 80 mol% and a mass average molecular weight of 750,000 was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value would be 15, and an acrylic copolymer compound (a-) having a glass transition temperature of 10 ° C., a hydroxyl value of 20 mgKOH / g, and an acid value of 5 mgKOH / g. 5) was prepared.
  • the acrylic copolymer (A1) having a functional group is composed of 2-ethylhexyl acrylate, lauryl acrylate, 2-hydroxyethyl acrylate and acrylic acid, and the combined ratio of 2-ethylhexyl acrylate and lauryl acrylate is 60 mol%, mass A copolymer having an average molecular weight of 800,000 was prepared.
  • the acrylic copolymer (A1) having a functional group is composed of 2-ethylhexyl acrylate, lauryl acrylate, 2-hydroxyethyl acrylate and acrylic acid, and the combined ratio of 2-ethylhexyl acrylate and lauryl acrylate is 80 mol%, mass A copolymer having an average molecular weight of 700,000 was prepared.
  • (A-8) As the acrylic copolymer (A1) having a functional group, a copolymer comprising 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and acrylic acid, the ratio of 2-ethylhexyl acrylate being 55 mol%, and the weight average molecular weight being 800,000 was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value would be 20, and an acrylic copolymer compound (a) having a glass transition temperature of ⁇ 55 ° C., a hydroxyl value of 80 mgKOH / g, and an acid value of 5 mgKOH / g -8) was produced.
  • (A-9) As the acrylic copolymer (A1) having a functional group, a copolymer composed of butyl acrylate, 2-hydroxyethyl acrylate and acrylic acid and having a butyl acrylate ratio of 60 mol% and a mass average molecular weight of 800,000 was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value would be 20, and an acrylic copolymer compound (a) having a glass transition temperature of ⁇ 40 ° C., a hydroxyl value of 60 mgKOH / g, and an acid value of 5 mgKOH / g. ⁇ 9) was produced.
  • HTR-860P-3 (trade name, mass average molecular weight 800,000 manufactured by Nagase ChemteX Corporation), which is an acrylic rubber (high molecular weight component) containing 3% by mass of a monomer unit derived from glycidyl acrylate or glycidyl methacrylate. ) 200 parts by mass and 0.075 parts by mass of “Curazole 2PZ-CN” (trade name, 1-cyanoethyl-2-phenylimidazole, manufactured by Shikoku Kasei Kogyo Co., Ltd.) as a curing accelerator, and mixed by stirring.
  • An adhesive composition (d-1) was obtained.
  • HTR-860P-3 (trade name, mass average molecular weight 800,000 manufactured by Nagase ChemteX Corporation), which is an acrylic rubber (high molecular weight component) containing 3% by mass of a monomer unit derived from glycidyl acrylate or glycidyl methacrylate. ) 200 parts by weight and 0.01 part by weight of “Curazole 2PZ-CN” (manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name: 1-cyanoethyl-2-phenylimidazole) as a curing accelerator, and stirred and mixed. A varnish of the adhesive composition was obtained.
  • Example 1 5 parts by weight of Coronate L (manufactured by Nippon Polyurethane) as a polyisocyanate is added to 100 parts by weight of the acrylic copolymer (a-1), and 3 parts by weight of Irgacure 184 (manufactured by Ciba Geigy Japan) is used as a photopolymerization initiator. The added mixture was dissolved in ethyl acetate and stirred to prepare an adhesive composition. Next, this pressure-sensitive adhesive composition was applied to a release liner made of a polyethylene-terephthalate film subjected to a release treatment so that the thickness after drying was 10 ⁇ m, and dried at 110 ° C. for 3 minutes. A pressure-sensitive adhesive sheet in which a pressure-sensitive adhesive layer was formed on a base film was prepared by bonding to a material film.
  • Coronate L manufactured by Nippon Polyurethane
  • Irgacure 184 manufactured by Ciba Geigy Japan
  • the adhesive composition (d-1) was applied to a release liner made of a polyethylene-terephthalate film subjected to a release treatment so that the thickness after drying was 20 ⁇ m, and dried at 110 ° C. for 5 minutes.
  • a release liner made of a polyethylene-terephthalate film subjected to a release treatment so that the thickness after drying was 20 ⁇ m, and dried at 110 ° C. for 5 minutes.
  • the adhesive sheet was cut into the shape shown in FIG. 3 and the like that can be bonded to the ring frame so as to cover the opening. Moreover, the adhesive film was cut into the shape shown in FIG. Then, the adhesive layer side of the adhesive sheet and the adhesive layer side of the adhesive film are pasted so that a portion where the adhesive layer 12 is exposed is formed around the adhesive film as shown in FIG. In addition, a wafer processing tape was produced.
  • Example 2 A pressure-sensitive adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-2) was used. Using this pressure-sensitive adhesive composition, a wafer processing tape was produced in the same manner as in Example 1.
  • Example 3 A pressure-sensitive adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-3) was used. Using this pressure-sensitive adhesive composition, a wafer processing tape was produced in the same manner as in Example 1.
  • Example 4 A pressure-sensitive adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-4) was used. Using this pressure-sensitive adhesive composition, a wafer processing tape was produced in the same manner as in Example 1.
  • Example 5 A pressure-sensitive adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-5) was used. Using this pressure-sensitive adhesive composition, a wafer processing tape was produced in the same manner as in Example 1.
  • Example 6 A pressure-sensitive adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-6) was used. Using this pressure-sensitive adhesive composition, a wafer processing tape was produced in the same manner as in Example 1.
  • Example 7 A pressure-sensitive adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-7) was used. Using this pressure-sensitive adhesive composition, a wafer processing tape was produced in the same manner as in Example 1.
  • Example 8 A wafer processing tape was produced in the same manner as in Example 1 except that the adhesive composition (d-2) was used.
  • Example 9 A wafer processing tape was produced in the same manner as in Example 4 except that the adhesive composition (d-2) was used.
  • Example 1 A pressure-sensitive adhesive composition was prepared in the same manner as in Example 1, except that the amount of polyisocyanate was 1 part by mass. Using this pressure-sensitive adhesive composition, a wafer processing tape was produced in the same manner as in Example 1.
  • a pressure-sensitive adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-8) was used and the amount of polyisocyanate was changed to 2 parts by mass. Using this pressure-sensitive adhesive composition, a wafer processing tape was produced in the same manner as in Example 1.
  • Example 3 A pressure-sensitive adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-9) was used. Using this pressure-sensitive adhesive composition, a wafer processing tape was produced in the same manner as in Example 1.
  • the measurement was performed at a peeling rate of 300 mm / min and a peeling angle of 180 ° in a standard state (temperature 23 ° C., relative humidity 50%).
  • As the ultraviolet lamp a high-pressure mercury lamp (365 nm, 30 mW / cm 2 , irradiation distance 10 cm) was used, and the irradiation intensity was 200 mJ / cm 2 .
  • the measurement results are shown in Table 1.
  • a surface protection tape was bonded to the wafer surface on which the circuit pattern was formed.
  • B A back grinding process for grinding the wafer back surface was performed.
  • C With the wafer heated to 70 ° C., the wafer processing tape adhesive layer is bonded to the back surface of the wafer, and at the same time, the wafer processing ring frame is attached to the wafer processing tape adhesive layer. It bonded with the exposed part, without overlapping with an adhesive bond layer.
  • D) The surface protection tape was peeled from the wafer surface.
  • the wafer processing tape was expanded by 10% to divide the wafer and the adhesive layer along a cutting line, thereby obtaining a plurality of chips with the adhesive layer.
  • G In the expanding step (f), a portion of the wafer processing tape that does not overlap with the chip (an annular region between the region where the chip is present and the ring frame) is heated to 120 ° C. and contracted. The resulting slack was removed and the tip spacing was maintained.
  • the chip with the adhesive layer was picked up from the adhesive layer of the wafer processing tape.
  • the dicing ring frame bonded to the wafer processing tape with DDS-2300 manufactured by DISCO Corporation is pushed down by the expanding ring of DDS-2300 manufactured by DISCO Corporation, and used for wafer processing. Expanding was performed by pressing a portion of the outer periphery of the wafer bonding portion of the tape that did not overlap the wafer against a circular push-up member. Further, as the conditions of the steps (f) and (g), the expanding speed was 300 mm / sec, and the expanding amount (push-up amount) was 20 mm.
  • the amount of expansion refers to the amount of change in the relative position between the ring frame and the push-up member before and after pressing.
  • the shearing force between the pressure-sensitive adhesive layer 12 and the adhesive layer 13 is 0.2 N / mm 2 or more, and the peeling force after irradiation with energy rays of 200 mJ / cm 2 is 0.3 N / 25 mm or less.
  • the wafer processing tapes of Examples 1 to 9 have a dividing rate of the adhesive layer of 100%, and it was revealed from the evaluation of the pickup success rate that the pickup tape has good pickup properties.
  • Comparative Example 2 in which the shear force between the pressure-sensitive adhesive layer 12 and the adhesive layer 13 is 0.2 N / mm 2 or less, a deviation occurs at the interface between the pressure-sensitive adhesive layer 12 and the adhesive layer 13.
  • the semiconductor device manufacturing methods B to D are the same as the expanding step, the heat shrinking step, and the picking up step in the semiconductor device manufacturing method A except that they are already divided into individual chips in the expanding step. A process is performed. Therefore, it is clear that the results obtained using the wafer processing tapes 10 of Examples 1 to 9 and Comparative Examples 1 to 3 are equivalent to the results shown in Table 1, and the semiconductor device manufacturing method B From D to D, it is useful to use the wafer processing tape 10 of the present invention from the viewpoints of severability and pick-up property.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Le but de la présente invention est de fournir un ruban de traitement de plaquette qui n'entraîne pas de déplacement au niveau de l'interface entre la couche adhésive et la couche d'agent adhésif du fait de la dilatation, qui a des propriétés de dilatation uniformes et appropriées pour une étape consistant à diviser la couche adhésive, et qui a d'excellentes performances de lecture. Dans la présente invention, un ruban de traitement de plaquette est utilisé, caractérisé par la composition suivante : un film de substrat ; une couche d'agent adhésif formée sur le film de substrat ; et une couche adhésive formée sur la couche d'agent collant ; la force de cisaillement de la couche d'agent collant et de la couche adhésive à 25 °C n'étant pas inférieure à 0,2 N/mm2 et la force de décollement entre la couche d'agent adhésif ; la couche adhésive au niveau d'un angle de décollement, à 180° ; et une vitesse de décollement à 300 mm/min dans un état standard conforme à la norme JIS Z0237 après irradiation par un faisceau d'énergie de 200 mJ/cm2 n'étant pas supérieur à 0,3 N/25 mm.
PCT/JP2012/083646 2012-01-06 2012-12-26 Ruban de traitement de plaquette et procédé de fabrication d'un dispositif semi-conducteur utilisant celui-ci WO2013103116A1 (fr)

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KR1020137033285A KR101545805B1 (ko) 2012-01-06 2012-12-26 웨이퍼가공용 테이프 및 이를 사용한 반도체장치의 제조방법
CN201280017728.4A CN103460348B (zh) 2012-01-06 2012-12-26 晶片加工用胶带及使用其的半导体装置的制造方法
SG2013082540A SG194831A1 (en) 2012-01-06 2012-12-26 Wafer-processing tape and method for manufacturing semiconductor device using same

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JP2012038394A JP5294358B2 (ja) 2012-01-06 2012-02-24 ウエハ加工用テープ及びこれを使用した半導体装置の製造方法

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WO2017170021A1 (fr) * 2016-03-30 2017-10-05 リンテック株式会社 Feuille de traitement de semi-conducteur
CN112351859A (zh) * 2019-05-29 2021-02-09 古河电气工业株式会社 玻璃加工用胶带
TWI761558B (zh) * 2017-07-25 2022-04-21 日商迪思科股份有限公司 晶圓加工方法以及用於晶圓加工的輔助器具

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JP6295135B2 (ja) * 2014-04-24 2018-03-14 日東電工株式会社 ダイシング・ダイボンドフィルム
JP6425435B2 (ja) * 2014-07-01 2018-11-21 株式会社ディスコ チップ間隔維持装置
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JP2016125026A (ja) * 2015-01-07 2016-07-11 日東電工株式会社 粘着テープ
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JP2017005160A (ja) * 2015-06-12 2017-01-05 古河電気工業株式会社 ウエハ加工用テープ
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JP7017334B2 (ja) * 2017-04-17 2022-02-08 日東電工株式会社 ダイシングダイボンドフィルム
KR102481244B1 (ko) * 2017-07-03 2022-12-26 린텍 가부시키가이샤 스텔스 다이싱용 점착 시트 및 반도체 장치의 제조 방법
JP7062653B2 (ja) * 2017-07-03 2022-05-06 リンテック株式会社 ステルスダイシング用粘着シートおよび半導体装置の製造方法
JP7112205B2 (ja) * 2018-02-13 2022-08-03 株式会社ディスコ 分割装置
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WO2019220599A1 (fr) * 2018-05-17 2019-11-21 日立化成株式会社 Film intégré de fixation de puce de découpage en dés, procédé de fabrication associé, et procédé de fabrication de dispositif semi-conducteur
JP7327467B2 (ja) 2019-03-22 2023-08-16 株式会社レゾナック Ｎ－ビニルカルボン酸アミド共重合体水溶液の製造方法
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JP7269096B2 (ja) * 2019-05-29 2023-05-08 古河電気工業株式会社 ガラス加工用テープ
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WO2016140248A1 (fr) * 2015-03-04 2016-09-09 リンテック株式会社 Feuille composite adhésive de type film et procédé de fabrication de dispositif à semi-conducteur
JPWO2016140248A1 (ja) * 2015-03-04 2017-12-14 リンテック株式会社 フィルム状接着剤複合シート及び半導体装置の製造方法
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CN112351859A (zh) * 2019-05-29 2021-02-09 古河电气工业株式会社 玻璃加工用胶带

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CN103460348B (zh) 2016-08-17
KR101545805B1 (ko) 2015-08-19
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KR20140040157A (ko) 2014-04-02
CN103460348A (zh) 2013-12-18
SG194831A1 (en) 2013-12-30

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